12:1:1:1 Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
DOI:10.1021/nl101027x JN:NANO LETTERS PY:2010
TC:183 AU: Guo, Wei;Zhang, Meng;Banerjee, Animesh;Bhattacharya, Pallab;
12:1:1:2 InGaN/GaN nanorod array white light-emitting diode
DOI:10.1063/1.3478515 JN:APPLIED PHYSICS LETTERS PY:2010
TC:92 AU: Lin, Hon-Way;Lu, Yu-Jung;Chen, Hung-Ying;Lee, Hong-Mao;Gwo, Shangjr;
12:1:1:3 p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
DOI:10.1021/nl104536x JN:NANO LETTERS PY:2011
TC:105 AU: Nguyen, H. P. T.;Zhang, S.;Cui, K.;Han, X.;Fathololoumi, S.;Couillard, M.;Botton, G. A.;Mi, Z.;
12:1:1:4 Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy
DOI:10.1088/0957-4484/21/19/195202 JN:NANOTECHNOLOGY PY:2010
TC:61 AU: Armitage, R.;Tsubaki, K.;
12:1:1:5 InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
DOI:10.1063/1.3588201 JN:APPLIED PHYSICS LETTERS PY:2011
TC:50 AU: Guo, Wei;Banerjee, Animesh;Bhattacharya, Pallab;Ooi, Boon S.;
12:1:1:6 Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes
DOI:10.1021/nn200521r JN:ACS NANO PY:2011
TC:58 AU: Hahn, Christopher;Zhang, Zhaoyu;Fu, Anthony;Wu, Cheng Hao;Hwang, Yun Jeong;Gargas, Daniel J.;Yang, Peidong;
12:1:1:7 Current path in light emitting diodes based on nanowire ensembles
DOI:10.1088/0957-4484/23/46/465301 JN:NANOTECHNOLOGY PY:2012
TC:17 AU: Limbach, F.;Hauswald, C.;Laehnemann, J.;Woelz, M.;Brandt, O.;Trampert, A.;Hanke, M.;Jahn, U.;Calarco, R.;Geelhaar, L.;Riechert, H.;
12:1:1:8 Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
DOI:10.1021/nl103649d JN:NANO LETTERS PY:2011
TC:64 AU: Guo, Wei;Zhang, Meng;Bhattacharya, Pallab;Heo, Junseok;
12:1:1:9 Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
DOI:10.1021/nl203860b JN:NANO LETTERS PY:2012
TC:1 AU: Hieu Pham Trung Nguyen;Cui, Kai;Zhang, Shaofei;Djavid, Mehrdad;Korinek, Andreas;Botton, Gianluigi A.;Mi, Zetian;
12:1:1:10 High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
DOI:10.1063/1.3284660 JN:APPLIED PHYSICS LETTERS PY:2010
TC:47 AU: Chang, Y. -L.;Wang, J. L.;Li, F.;Mi, Z.;
12:1:1:11 Submicrometre resolved optical characterization of green nanowire-based light emitting diodes
DOI:10.1088/0957-4484/22/34/345705 JN:NANOTECHNOLOGY PY:2011
TC:34 AU: Bavencove, A-L;Tourbot, G.;Garcia, J.;Desieres, Y.;Gilet, P.;Levy, F.;Andre, B.;Gayral, B.;Daudin, B.;Dang, Le Si;
12:1:1:12 Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
DOI:10.1088/0957-4484/22/7/075601 JN:NANOTECHNOLOGY PY:2011
TC:40 AU: Tourbot, G.;Bougerol, C.;Grenier, A.;Den Hertog, M.;Sam-Giao, D.;Cooper, D.;Gilet, P.;Gayral, B.;Daudin, B.;
12:1:1:13 Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials
DOI:10.1021/nl4015183 JN:NANO LETTERS PY:2013
TC:8 AU: Marquardt, Oliver;Hauswald, Christian;Woelz, Martin;Geelhaar, Lutz;Brandt, Oliver;
12:1:1:14 Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
DOI:10.1103/PhysRevB.84.155303 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Laehnemann, Jonas;Brandt, Oliver;Pfueller, Carsten;Flissikowski, Timur;Jahn, Uwe;Luna, Esperanza;Hanke, Michael;Knelangen, Matthias;Trampert, Achim;Grahn, Holger T.;
12:1:1:15 Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
DOI:10.1088/0957-4484/24/43/435702 JN:NANOTECHNOLOGY PY:2013
TC:13 AU: Kehagias, Th;Dimitrakopulos, G. P.;Becker, P.;Kioseoglou, J.;Furtmayr, F.;Koukoula, T.;Haeusler, I.;Chernikov, A.;Chatterjee, S.;Karakostas, Th;Solowan, H-M;Schwarz, U. T.;Eickhoff, M.;Komninou, Ph;
12:1:1:16 Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon
DOI:10.1088/0957-4484/23/19/194012 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Hieu Pham Trung Nguyen;Djavid, Mehrdad;Cui, Kai;Mi, Zetian;
12:1:1:17 Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
DOI:10.1021/nl4030165 JN:NANO LETTERS PY:2013
TC:23 AU: Hieu Pham Trung Nguyen;Zhang, Shaofei;Connie, Ashfiqua T.;Kibria, Md Golam;Wang, Qi;Shih, Ishiang;Mi, Zetian;
12:1:1:18 Ultrashort carrier lifetime of vapor-liquid-solid-grown GaN/InGaN multi-quantum-well coaxial nanorods
DOI:10.1016/j.actamat.2013.11.058 JN:ACTA MATERIALIA PY:2014
TC:5 AU: Ebaid, Mohamed;Kang, Jin-Ho;Lim, Seung-Hyuk;Ko, Suk-Min;Cho, Yong-Hoon;Ryu, Sang-Wan;
12:1:1:19 Correlation between In content and emission wavelength of InxGa1-xN/GaN nanowire heterostructures
DOI:10.1088/0957-4484/23/45/455203 JN:NANOTECHNOLOGY PY:2012
TC:12 AU: Woelz, M.;Laehnemann, J.;Brandt, O.;Kaganer, V. M.;Ramsteiner, M.;Pfueller, C.;Hauswald, C.;Huang, C. N.;Geelhaar, L.;Riechert, H.;
12:1:1:20 Growth mechanism and properties of InGaN insertions in GaN nanowires
DOI:10.1088/0957-4484/23/13/135703 JN:NANOTECHNOLOGY PY:2012
TC:22 AU: Tourbot, G.;Bougerol, C.;Glas, F.;Zagonel, L. F.;Mahfoud, Z.;Meuret, S.;Gilet, P.;Kociak, M.;Gayral, B.;Daudin, B.;
12:1:1:21 Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1-xN/GaN Axial Nanowire Heterostructures
DOI:10.1021/acs.nanolett.5b00101 JN:NANO LETTERS PY:2015
TC:0 AU: Marquardt, Oliver;Geelhaar, Lutz;Brandt, Oliver;
12:1:1:22 Gallium nitride nanostructures for light-emitting diode applications
DOI:10.1016/j.nanoen.2012.03.005 JN:NANO ENERGY PY:2012
TC:16 AU: Kang, Moon Sung;Lee, Chul-Ho;Park, Jun Beom;Yoo, Hyobin;Yi, Gyu-Chul;
12:1:1:23 Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
DOI:10.1088/0957-4484/22/44/445202 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Hieu Pham Trung Nguyen;Cui, Kai;Zhang, Shaofei;Fathololoumi, Saeed;Mi, Zetian;
12:1:1:24 Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon
DOI:10.1021/nl5015603 JN:NANO LETTERS PY:2014
TC:13 AU: Frost, Thomas;Jahangir, Shafat;Stark, Ethan;Deshpande, Saniya;Hazari, Arnab;Zhao, Chao;Ooi, Boon S.;Bhattacharya, Pallab;
12:1:1:25 Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction
DOI:10.1063/1.3604810 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Woelz, M.;Kaganer, V. M.;Brandt, O.;Geelhaar, L.;Riechert, H.;
12:1:1:26 Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy
DOI:10.1063/1.3530634 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Limbach, F.;Gotschke, T.;Stoica, T.;Calarco, R.;Sutter, E.;Ciston, J.;Cusco, R.;Artus, L.;Kremling, S.;Hoefling, S.;Worschech, L.;Gruetzmacher, D.;
12:1:1:27 Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon
DOI:10.1063/1.3540688 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Heo, Junseok;Guo, Wei;Bhattacharya, Pallab;
12:1:1:28 High efficiency ultraviolet emission from AlxGa1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy
DOI:10.1063/1.4738983 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Wang, Q.;Nguyen, H. P. T.;Cui, K.;Mi, Z.;
12:1:1:29 Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts
DOI:10.1063/1.4711850 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Kum, Hyun;Heo, Junseok;Jahangir, Shafat;Banerjee, Animesh;Guo, Wei;Bhattacharya, Pallab;
12:1:1:30 Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
DOI:10.1063/1.4894241 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Musolino, M.;Tahraoui, A.;Limbach, F.;Laehnemann, J.;Jahn, U.;Brandt, O.;Geelhaar, L.;Riechert, H.;
12:1:1:31 Molecular beam epitaxial growth and optical properties of red-emitting (lambda=650 nm) InGaN/GaN disks-in-nanowires on silicon
DOI:10.1063/1.4793300 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Jahangir, S.;Mandl, M.;Strassburg, M.;Bhattacharya, P.;
12:1:1:32 Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes
DOI:10.1088/0957-4484/24/34/345201 JN:NANOTECHNOLOGY PY:2013
TC:12 AU: Wang, Q.;Connie, A. T.;Nguyen, H. P. T.;Kibria, M. G.;Zhao, S.;Sharif, S.;Shih, I.;Mi, Z.;
12:1:1:33 Room-Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity
DOI:10.1021/nl400060j JN:NANO LETTERS PY:2013
TC:11 AU: Heo, Junseok;Jahangir, Shafat;Xiao, Bo;Bhattacharya, Pallab;
12:1:1:34 Suppressed piezoelectric polarization in single InGaN/GaN heterostructure nanowires
DOI:10.1103/PhysRevB.88.155323 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Tsai, Wen-Che;Chen, Yen-Ting;Lin, Chia-Hsien;Hsu, Wei-Ting;Hsu, Yung-Sheng;Chen, Li-Chyong;Chen, Kuei-Hsien;Chang, Wen-Hao;
12:1:1:35 Monodisperse (In, Ga) N insertions in catalyst-free-grown GaN(0001) nanowires
DOI:10.1088/0957-4484/22/36/365703 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Knelangen, M.;Hanke, M.;Luna, E.;Schrottke, L.;Brandt, O.;Trampert, A.;
12:1:1:36 Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)
DOI:10.1088/0957-4484/24/4/045702 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Cardin, V.;Dion-Bertrand, L. I.;Gregoire, P.;Nguyen, H. P. T.;Sakowicz, M.;Mi, Z.;Silva, C.;Leonelli, R.;
12:1:1:37 Misorientation defects in coalesced self-catalyzed GaN nanowires
DOI:10.1016/j.jcrysgro.2013.02.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:16 AU: Grossklaus, K. A.;Banerjee, A.;Jahangir, S.;Bhattacharya, P.;Millunchick, J. M.;
12:1:1:38 Spin Relaxation in InGaN Quantum Disks in GaN Nanowires
DOI:10.1021/nl203091f JN:NANO LETTERS PY:2011
TC:4 AU: Banerjee, Animesh;Dogan, Fatih;Heo, Junseok;Manchon, Aurelien;Guo, Wei;Bhattacharya, Pallab;
12:1:1:39 Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates
DOI:10.1088/0957-4484/23/8/085205 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Cui, Kai;Fathololoumi, Saeed;Kibria, Md Golam;Botton, Gianluigi A.;Mi, Zetian;
12:1:1:40 Computational study of an InGaN/GaN nanocolumn light-emitting diode
DOI:10.1103/PhysRevB.81.155306 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Boecklin, Christoph;Veprek, Ratko G.;Steiger, Sebastian;Witzigmann, Bernd;
12:1:1:41 Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy
DOI:10.1088/0957-4484/25/7/075705 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Gomez-Gomez, M.;Garro, N.;Segura-Ruiz, J.;Martinez-Criado, G.;Cantarero, A.;Mengistu, H. T.;Garcia-Cristobal, A.;Murcia-Mascaros, S.;Denker, C.;Malindretos, J.;Rizzi, A.;
12:1:1:42 Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy
DOI:10.1116/1.4865914 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:4 AU: Connie, Ashfiqua T.;Nguyen, Hieu P. T.;Sadaf, Sharif M.;Shih, Ishiang;Mi, Zetian;
12:1:1:43 Formation and Nature of InGaN Quantum Dots in GaN Nanowires
DOI:10.1021/nl5041989 JN:NANO LETTERS PY:2015
TC:1 AU: Deshpande, Saniya;Frost, Thomas;Yan, Lifan;Jahangir, Shafat;Hazari, Arnab;Liu, Xianhe;Mirecki-Millunchick, Joanna;Mi, Zetian;Bhattacharya, Pallab;
12:1:1:44 Fabrication of m-axial InGaN nanocolumn arrays on silicon substrates using triethylgallium precursor chemical vapor deposition approach
DOI:10.1016/j.apsusc.2014.01.191 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Liu, Chia-Ming;Tai, Yian;Chen, Kuei-Hsien;Chen, Li-Chyong;
12:1:1:45 Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor-Liquid-Solid Growth Mode
DOI:10.1155/2012/653195 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Chang, Wen-Ming;Liao, Che-Hao;Chen, Chih-Yen;Hsieh, Chieh;Tang, Tsung-Yi;Kiang, Yean-Woei;Yang, C. C.;
12:1:1:46 Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch
DOI:10.1063/1.4725474 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Zhang, Min;Shi, Jun-Jie;
12:1:1:47 Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
DOI:10.1063/1.3575323 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Goodman, Kevin D.;Protasenko, Vladimir V.;Verma, Jai;Kosel, Thomas H.;Xing, Huili G.;Jena, Debdeep;
12:1:1:48 Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates
DOI:10.1007/s11664-014-3023-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:4 AU: Hieu Pham Trung Nguyen;Wang, Qi;Mi, Zetian;
12:1:1:49 Structural and Optical Properties of Disc-in-Wire InGaN/GaN LEDs
DOI:10.1021/nl503826k JN:NANO LETTERS PY:2015
TC:0 AU: Yan, Lifan;Jahangir, Shafat;Wight, Scott A.;Nikoobakht, Babak;Bhattacharya, Pallab;Millunchick, Joanna M.;
12:1:1:50 Barrier height of Pt-InxGa1-xN (0 <= x <= 0.5) nanowire Schottky diodes
DOI:10.1063/1.3579143 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Guo, Wei;Banerjee, Animesh;Zhang, Meng;Bhattacharya, Pallab;
12:1:1:51 Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N-2 plasma
DOI:10.1088/0957-4484/25/43/435606 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Ferreira, J. Afonso;Nguyen, H. P. T.;Mi, Z.;Leonelli, R.;Stafford, L.;
12:1:1:52 Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures
DOI:10.1063/1.4826618 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kamali, Yousef;Walsh, Brenna R.;Mooney, Jonathan;Hieu Nguyen;Brosseau, Colin;Leonelli, Richard;Mi, Zetian;Kambhampati, Patanjali;
12:1:1:53 Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
DOI:10.1063/1.4827338 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Heo, Junseok;Zhou, Zifan;Guo, Wei;Ooi, Boon S.;Bhattacharya, Pallab;
12:1:1:54 Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity
DOI:10.1103/PhysRevB.85.195321 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Das, Ayan;Bhattacharya, Pallab;Banerjee, Animesh;Jankowski, Marc;
12:1:1:55 Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires
DOI:10.1063/1.4794418 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: You, Guanjun;Guo, Wei;Zhang, Chunfeng;Bhattacharya, Pallab;Henderson, Ron;Xu, Jian;
12:1:1:56 MOCVD growth of vertically aligned InGaN nanowires
DOI:10.1016/j.jcrysgro.2012.10.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Kuo, H. C.;Oh, Tae Su;Ku, P-C;
12:1:1:57 Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy
DOI:10.1088/0957-4484/25/21/215705 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Cherns, D.;Webster, R. F.;Novikov, S. V.;Foxon, C. T.;Fischer, A. M.;Ponce, F. A.;Haigh, S. J.;
12:1:1:58 Competitive In and Ga incorporations for InxGa1-xN (0.29 < x < 0.36) nanorods grown at a moderate temperature
DOI:10.1063/1.4816805 JN:AIP ADVANCES PY:2013
TC:2 AU: Hamad, S. M.;Norman, D. P.;Chen, Q. Y.;Keles, F.;Seo, H. W.;
12:1:1:59 Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
DOI:10.1063/1.4892830 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Du, Chunhua;Ma, Ziguang;Zhou, Junming;Lu, Taiping;Jiang, Yang;Zuo, Peng;Jia, Haiqiang;Chen, Hong;
12:1:1:60 Size effect on compression properties of GaN nanocones examined using in situ transmission electron microscopy
DOI:10.1016/j.jallcom.2014.01.214 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Kang, Shao-Hui;Fang, Te-Hua;
12:1:1:61 Electrical characterization of the flowing afterglow of N-2 and N-2/O-2 microwave plasmas at reduced pressure
DOI:10.1063/1.4872468 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Ferreira, J. Afonso;Stafford, L.;Leonelli, R.;Ricard, A.;
12:1:1:62 Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires (vol 22, 365703, 2011)
DOI:10.1088/0957-4484/22/46/469501 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Knelangen, M.;Hanke, M.;Luna, E.;Schrottke, L.;Brandt, O.;Trampert, A.;
12:1:1:63 Doping of GaAs by laser ablated ZnTe
DOI:10.1063/1.3630033 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Ullrich, B.;Brown, G. J.;
12:1:1:64 Magnetoconduction in a two-dimensional system confined in wurtzite AlxGa1-xN/GaN heterostructure
DOI:10.1063/1.4803093 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Cangas, R.;Hidalgo, M. A.;
12:1:1:65 High performance continuous wave 1.3 mu m quantum dot lasers on silicon
DOI:10.1063/1.4863223 JN:APPLIED PHYSICS LETTERS PY:2014
TC:8 AU: Liu, Alan Y.;Zhang, Chong;Norman, Justin;Snyder, Andrew;Lubyshev, Dmitri;Fastenau, Joel M.;Liu, Amy W. K.;Gossard, Arthur C.;Bowers, John E.;
12:1:1:66 Growths of indium gallium nitride nanowires by plasma-assisted chemical vapor deposition
DOI:10.1016/j.tsf.2014.04.053 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Tang, Wei-Che;Hong, Franklin Chau-Nan;
12:1:1:67 Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings
DOI:10.1063/1.4816331 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Bondarenko, Olesya;Gu, Qing;Shane, Janelle;Simic, Aleksandar;Slutsky, Boris;Fainman, Yeshaiahu;
12:1:1:68 Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition
DOI:10.1063/1.3279147 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Song, Taeseup;Park, Won Il;Paik, Ungyu;
12:1:1:69 Combined effects of hydrostatic pressure and electric field on the donor binding energy and polarizability in laterally coupled double InAs/GaAs quantum-well wires
DOI:10.1016/j.apsusc.2010.05.057 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Tangarife, E.;Duque, C. A.;
12:1:1:70 Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy
DOI:10.1116/1.3292560 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Chang, Y. -L.;Li, F.;Mi, Z.;
12:1:2:1 GaN based nanorods for solid state lighting
DOI:10.1063/1.3694674 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:150 AU: Li, Shunfeng;Waag, Andreas;
12:1:2:2 Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy
DOI:10.1088/0957-4484/21/1/015602 JN:NANOTECHNOLOGY PY:2010
TC:81 AU: Koester, R.;Hwang, J. S.;Durand, C.;Dang, D. Le Si;Eymery, J.;
12:1:2:3 Visible-Color-Tunable Light-Emitting Diodes
DOI:10.1002/adma.201100806 JN:ADVANCED MATERIALS PY:2011
TC:80 AU: Hong, Young Joon;Lee, Chul-Ho;Yoon, Aram;Kim, Miyoung;Seong, Han-Kyu;Chung, Hun Jae;Sone, Cheolsoo;Park, Yong Jo;Yi, Gyu-Chul;
12:1:2:4 M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
DOI:10.1021/nl202686n JN:NANO LETTERS PY:2011
TC:62 AU: Koester, Robert;Hwang, Jun-Seok;Salomon, Damien;Chen, Xiaojun;Bougerol, Catherine;Barnes, Jean-Paul;Dang, Daniel Le Si;Rigutti, Lorenzo;Bugallo, Andres de Luna;Jacopin, Gwenole;Tchernycheva, Maria;Durand, Christophe;Eymery, Joel;
12:1:2:5 InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays
DOI:10.1021/nl301307a JN:NANO LETTERS PY:2012
TC:51 AU: Yeh, Ting-Wei;Lin, Yen-Ting;Stewart, Lawrence S.;Dapkus, P. Daniel;Sarkissian, Raymond;O'Brien, John. D.;Ahn, Byungmin;Nutt, Steven R.;
12:1:2:6 Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
DOI:10.1088/0957-4484/21/30/305201 JN:NANOTECHNOLOGY PY:2010
TC:68 AU: Bergbauer, W.;Strassburg, M.;Koelper, Ch;Linder, N.;Roder, C.;Laehnemann, J.;Trampert, A.;Fuendling, S.;Li, S. F.;Wehmann, H-H;Waag, A.;
12:1:2:7 Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array
DOI:10.1021/nl4021045 JN:NANO LETTERS PY:2013
TC:21 AU: Riley, James R.;Padalkar, Sonal;Li, Qiming;Lu, Ping;Koleske, Daniel D.;Wierer, Jonathan J.;Wang, George T.;Lauhon, Lincoln J.;
12:1:2:8 Direct Imaging of p-n Junction in Core-Shell GaN Wires
DOI:10.1021/nl5010493 JN:NANO LETTERS PY:2014
TC:4 AU: Tchoulfian, P.;Donatini, F.;Levy, F.;Dussaigne, A.;Ferret, P.;Pernot, J.;
12:1:2:9 Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
DOI:10.1063/1.3497078 JN:APPLIED PHYSICS LETTERS PY:2010
TC:44 AU: Chen, X. J.;Perillat-Merceroz, G.;Sam-Giao, D.;Durand, C.;Eymery, J.;
12:1:2:10 Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor Deposition
DOI:10.1021/nl404794v JN:NANO LETTERS PY:2014
TC:13 AU: Ra, Yong-Ho;Navamathavan, Rangaswamy;Yoo, Hee-Il;Lee, Cheul-Ro;
12:1:2:11 Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays
DOI:10.1063/1.4790710 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:16 AU: Liao, Che-Hao;Chang, Wen-Ming;Yao, Yu-Feng;Chen, Hao-Tsung;Su, Chia-Ying;Chen, Chih-Yen;Hsieh, Chieh;Chen, Horng-Shyang;Tu, Charng-Gan;Kiang, Yean-Woei;Yang, C. C.;Hsu, Ta-Cheng;
12:1:2:12 Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy
DOI:10.1021/nl402331u JN:NANO LETTERS PY:2013
TC:15 AU: Howell, Sarah L.;Padalkar, Sonal;Yoon, KunHo;Li, Qiming;Koleske, Daniel D.;Wierer, Jonathan J.;'Wang, George T.;Lauhon, Lincoln J.;
12:1:2:13 Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
DOI:10.1039/c3tc32212b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Ra, Yong-Ho;Navamathavan, Rangaswamy;Kang, San;Lee, Cheul-Ro;
12:1:2:14 Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars
DOI:10.1063/1.4731629 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Chang, J. -R.;Chang, S. -P.;Li, Y. -J.;Cheng, Y. -J.;Sou, K. -P.;Huang, J. -K.;Kuo, H. -C.;Chang, C. -Y.;
12:1:2:15 Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
DOI:10.1063/1.4819440 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Le Boulbar, E. D.;Girgel, I.;Lewins, C. J.;Edwards, P. R.;Martin, R. W.;Satka, A.;Allsopp, D. W. E.;Shields, P. A.;
12:1:2:16 Self-assembled growth of inclined GaN nanorods on (10-10) m-plane sapphire using metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.09.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Chae, Sooryong;Lee, Kyuseung;Jang, Jongjin;Min, Daehong;Kim, Jaehwan;Nam, Okhyun;
12:1:2:17 High-Quality Uniaxial InxGa1-xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
DOI:10.1021/am303056v JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:14 AU: Ra, Yong-Ho;Navamathavan, R.;Park, Ji-Hyeon;Lee, Cheul-Ro;
12:1:2:18 Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
DOI:10.1063/1.4869336 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Wu, Kui;Wei, Tongbo;Zheng, Haiyang;Lan, Ding;Wei, Xuecheng;Hu, Qiang;Lu, Hongxi;Wang, Junxi;Luo, Yi;Li, Jinmin;
12:1:2:19 III- nitride core-shell nanowire arrayed solar cells
DOI:10.1088/0957-4484/23/19/194007 JN:NANOTECHNOLOGY PY:2012
TC:29 AU: Wierer, Jonathan J., Jr.;Li, Qiming;Koleske, Daniel D.;Lee, Stephen R.;Wang, George T.;
12:1:2:20 Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy
DOI:10.1088/0957-4484/25/25/255201 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Lavenus, P.;Messanvi, A.;Rigutti, L.;Bugallo, A. De Luna;Zhang, H.;Bayle, F.;Julien, F. H.;Eymery, J.;Durand, C.;Tchernycheva, M.;
12:1:2:21 Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth
DOI:10.1002/adfm.201303671 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:9 AU: Lin, Yen-Ting;Yeh, Ting-Wei;Nakajima, Yoshitake;Dapkus, P. Daniel;
12:1:2:22 Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy
DOI:10.1063/1.3596446 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Bugallo, A. De Luna;Rigutti, L.;Jacopin, G.;Julien, F. H.;Durand, C.;Chen, X. J.;Salomon, D.;Eymery, J.;Tchernycheva, M.;
12:1:2:23 Coaxial InxGa1-xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes
DOI:10.1021/nl400906r JN:NANO LETTERS PY:2013
TC:20 AU: Ra, Yong-Ho;Navamathavan, R.;Park, Ji-Hyeon;Lee, Cheul-Ro;
12:1:2:24 Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
DOI:10.1063/1.3513345 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Li, Qiming;Wang, George T.;
12:1:2:25 Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy
DOI:10.1063/1.3671365 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Chen, X. J.;Gayral, B.;Sam-Giao, D.;Bougerol, C.;Durand, C.;Eymery, J.;
12:1:2:26 High conductivity in Si-doped GaN wires
DOI:10.1063/1.4799167 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Tchoulfian, P.;Donatini, F.;Levy, F.;Amstatt, B.;Ferret, P.;Pernot, J.;
12:1:2:27 Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
DOI:10.1021/nl501124s JN:NANO LETTERS PY:2014
TC:11 AU: Tchernycheva, M.;Messanvi, A.;Bugallo, A. de Luna;Jacopin, G.;Lavenus, P.;Rigutti, L.;Zhang, H.;Halioua, Y.;Julien, F. H.;Eymery, J.;Durand, C.;
12:1:2:28 High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
DOI:10.1021/nl504447j JN:NANO LETTERS PY:2015
TC:1 AU: Koester, Robert;Sager, Daniel;Quitsch, Wolf-Alexander;Pfingsten, Oliver;Poloczek, Artur;Blumenthal, Sarah;Keller, Gregor;Prost, Werner;Bacher, Gerd;Tegude, Franz-Josef;
12:1:2:29 Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition
DOI:10.1088/0957-4484/23/46/465601 JN:NANOTECHNOLOGY PY:2012
TC:13 AU: Lin, Yen-Ting;Yeh, Ting-Wei;Dapkus, P. Daniel;
12:1:2:30 Giant Rabi Splitting of Whispering Gallery Polaritons in GaN/InGaN Core-Shell Wire
DOI:10.1021/acs.nanolett.5b01023 JN:NANO LETTERS PY:2015
TC:0 AU: Gong, Su-Hyun;Ko, Suk-Min;Jang, Min-Ho;Cho, Yong-Hoon;
12:1:2:31 Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires
DOI:10.1063/1.4829857 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Tchoulfian, P.;Donatini, F.;Levy, F.;Amstatt, B.;Dussaigne, A.;Ferret, P.;Bustarret, E.;Pernot, J.;
12:1:2:32 Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
DOI:10.1063/1.4870950 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Coulon, P. M.;Mexis, M.;Teisseire, M.;Jublot, M.;Vennegues, P.;Leroux, M.;Zuniga-Perez, J.;
12:1:2:33 Threading defect elimination in GaN nanowires
DOI:10.1557/jmr.2011.112 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:21 AU: Hersee, Stephen D.;Rishinaramangalam, Ashwin K.;Fairchild, Michael N.;Zhang, Lei;Varangis, Petros;
12:1:2:34 Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition
DOI:10.1088/0957-4484/25/22/225602 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Song, Jie;Leung, Benjamin;Zhang, Yu;Han, Jung;
12:1:2:35 Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall
DOI:10.1088/0957-4484/25/49/495705 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Cai, Duanjun;Lin, Na;Xu, Hongmei;Liao, Che-Hao;Yang, C. C.;
12:1:2:36 Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
DOI:10.1016/j.jcrysgro.2012.11.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Li, Shunfeng;Wang, Xue;Mohajerani, Matin Sadat;Fuendling, Soenke;Erenburg, Milena;Wei, Jiandong;Wehmann, Hergo-Heinrich;Waag, Andreas;Mandl, Martin;Bergbauer, Werner;Strassburg, Martin;
12:1:2:37 Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy
DOI:10.1063/1.4824290 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Tessarek, C.;Bashouti, M.;Heilmann, M.;Dieker, C.;Knoke, I.;Spiecker, E.;Christiansen, S.;
12:1:2:38 Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy
DOI:10.1063/1.4737395 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Li, Shunfeng;Wang, Xue;Fuendling, Soenke;Erenburg, Milena;Ledig, Johannes;Wei, Jiandong;Wehmann, Hergo H.;Waag, Andreas;Bergbauer, Werner;Mandl, Martin;Strassburg, Martin;Trampert, Achim;Jahn, Uwe;Riechert, Henning;Joenen, Holger;Hangleiter, Andreas;
12:1:2:39 Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate
DOI:10.1016/j.jcrysgro.2011.03.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Chen, X. J.;Hwang, J. S.;Perillat-Merceroz, G.;Landis, S.;Martin, B.;Dang, D. Le Si;Eymery, J.;Durand, C.;
12:1:2:40 Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets
DOI:10.1063/1.3671182 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Yeh, Ting-Wei;Lin, Yen-Ting;Ahn, Byungmin;Stewart, Lawrence S.;Dapkus, P. Daniel;Nutt, Steven R.;
12:1:2:41 The effect of growth temperature on the coaxial InxGa1 (-) N-x/GaN nanowires grown by metalorganic chemical vapor deposition
DOI:10.1016/j.tsf.2012.06.009 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Park, Ji-Hyeon;Navamathavan, R.;Ra, Yong-Ho;Yeom, Bo-Ra;Sim, Jae-Kwan;Ahn, Haeng-Kwun;Lee, Cheul-Ro;
12:1:2:42 Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy
DOI:10.1063/1.4871782 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Wang, Xue;Hartmann, Jana;Mandl, Martin;Mohajerani, Matin Sadat;Wehmann, Hergo-H.;Strassburg, Martin;Waag, Andreas;
12:1:2:43 The controlled growth of GaN microrods on Si(111) substrates by MOCVD
DOI:10.1016/j.jcrysgro.2014.10.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Foltynski, Bartosz;Garro, Nuria;Vallo, Martin;Finken, Matthias;Giesen, Christoph;Kalisch, Holger;Vescan, Andrei;Cantarero, Andres;Heuken, Michael;
12:1:2:44 A single-step electron beam lithography of buried nanostructures using cathodoluminescence imaging and low temperature
DOI:10.1088/0957-4484/21/37/375303 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Donatini, Fabrice;Dang, Le Si;
12:1:2:45 N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
DOI:10.1016/j.jcrysgro.2010.07.067 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:22 AU: Bergbauer, W.;Strassburg, M.;Koelper, Ch.;Linder, N.;Roder, C.;Laehnemann, J.;Trampert, A.;Fuendling, S.;Li, S. F.;Wehmann, H. -H.;Waag, A.;
12:1:2:46 The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H-2 and N-2 carrier gases
DOI:10.1016/j.jcrysgro.2013.09.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Wang, Xue;Jahn, Uwe;Ledig, Johannes;Wehmann, Hergo-H.;Mandl, Martin;Strassburg, Martin;Waag, Andreas;
12:1:2:47 GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid
DOI:10.1016/j.jcrysgro.2015.06.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Chen, Weijie;Lin, Jiali;Hu, Guoheng;Han, Xiaobiao;Liu, Minggang;Yang, Yibin;Wu, Zhisheng;Liu, Yang;Zhang, Baijun;
12:1:2:48 Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes
DOI:10.1063/1.4891236 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Lewins, C. J.;Le Boulbar, E. D.;Lis, S. M.;Edwards, P. R.;Martin, R. W.;Shields, P. A.;Allsopp, D. W. E.;
12:1:2:49 Understanding of the mechanism of pulsed NH3 growth in metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.12.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Song, Jie;Chen, Danti;Han, Jung;
12:1:3:1 Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
DOI:10.1103/PhysRevB.81.085310 JN:PHYSICAL REVIEW B PY:2010
TC:52 AU: Consonni, V.;Knelangen, M.;Geelhaar, L.;Trampert, A.;Riechert, H.;
12:1:3:2 Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
DOI:10.1021/nl401483e JN:NANO LETTERS PY:2013
TC:22 AU: Fernandez-Garrido, Sergio;Kaganer, Vladimir M.;Sabelfeld, Karl K.;Gotschke, Tobias;Grandal, Javier;Calleja, Enrique;Geelhaar, Lutz;Brandt, Oliver;
12:1:3:3 Three-Dimensional GaN/AIN Nanowire Heterostructures by Separating Nucleation and Growth Processes
DOI:10.1021/nl104265u JN:NANO LETTERS PY:2011
TC:49 AU: Carnevale, Santino D.;Yang, Jing;Phillips, Patrick J.;Mills, Michael J.;Myers, Roberto C.;
12:1:3:4 Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity
DOI:10.1021/nl302664q JN:NANO LETTERS PY:2012
TC:31 AU: Fernandez-Garrido, Sergio;Kong, Xiang;Gotschke, Tobias;Calarco, Raffaella;Geelhaar, Lutz;Trampert, Achim;Brandt, Oliver;
12:1:3:5 Quantitative description for the growth rate of self-induced GaN nanowires
DOI:10.1103/PhysRevB.85.155313 JN:PHYSICAL REVIEW B PY:2012
TC:15 AU: Consonni, V.;Dubrovskii, V. G.;Trampert, A.;Geelhaar, L.;Riechert, H.;
12:1:3:6 Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles
DOI:10.1021/nl504778s JN:NANO LETTERS PY:2015
TC:3 AU: Fernandez-Garrido, Sergio;Zettler, Johannes K.;Geelhaar, Lutz;Brandt, Oliver;
12:1:3:7 Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
DOI:10.1103/PhysRevB.84.245302 JN:PHYSICAL REVIEW B PY:2011
TC:23 AU: Hestroffer, Karine;Leclere, Cedric;Bougerol, Catherine;Renevier, Hubert;Daudin, Bruno;
12:1:3:8 Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire
DOI:10.1088/0957-4484/23/12/125702 JN:NANOTECHNOLOGY PY:2012
TC:23 AU: Perillat-Merceroz, G.;Thierry, R.;Jouneau, P-H;Ferret, P.;Feuillet, G.;
12:1:3:9 Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
DOI:10.1103/PhysRevB.83.035310 JN:PHYSICAL REVIEW B PY:2011
TC:26 AU: Consonni, V.;Hanke, M.;Knelangen, M.;Geelhaar, L.;Trampert, A.;Riechert, H.;
12:1:3:10 Mixed Polarity in Polarization-Induced p-n Junction Nanowire Light-Emitting Diodes
DOI:10.1021/nl400200g JN:NANO LETTERS PY:2013
TC:14 AU: Carnevale, Santino D.;Kent, Thomas F.;Phillips, Patrick J.;Sarwar, A. T. M. G.;Selcu, Camelia;Klie, Robert F.;Myers, Roberto C.;
12:1:3:11 Identification of III-N nanowire growth kinetics via a marker technique
DOI:10.1088/0957-4484/21/29/295605 JN:NANOTECHNOLOGY PY:2010
TC:32 AU: Songmuang, R.;Ben, T.;Daudin, B.;Gonzalez, D.;Monroy, E.;
12:1:3:12 Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate
DOI:10.1088/0957-4484/24/3/035703 JN:NANOTECHNOLOGY PY:2013
TC:18 AU: Wierzbicka, A.;Zytkiewicz, Z. R.;Kret, S.;Borysiuk, J.;Dluzewski, P.;Sobanska, M.;Klosek, K.;Reszka, A.;Tchutchulashvili, G.;Cabaj, A.;Lusakowska, E.;
12:1:3:13 Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy
DOI:10.1063/1.3555450 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Consonni, V.;Knelangen, M.;Trampert, A.;Geelhaar, L.;Riechert, H.;
12:1:3:14 Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
DOI:10.1088/0957-4484/22/24/245606 JN:NANOTECHNOLOGY PY:2011
TC:25 AU: Galopin, E.;Largeau, L.;Patriarche, G.;Travers, L.;Glas, F.;Harmand, J. C.;
12:1:3:15 Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate
DOI:10.1088/0957-4484/25/13/135610 JN:NANOTECHNOLOGY PY:2014
TC:4 AU: Borysiuk, J.;Zytkiewicz, Z. R.;Sobanska, M.;Wierzbicka, A.;Klosek, K.;Korona, K. P.;Perkowska, P. S.;Reszka, A.;
12:1:3:16 Scaling thermodynamic model for the self-induced nucleation of GaN nanowires
DOI:10.1103/PhysRevB.85.165317 JN:PHYSICAL REVIEW B PY:2012
TC:14 AU: Dubrovskii, Vladimir G.;Consonni, Vincent;Trampert, Achim;Geelhaar, Lutz;Riechert, Henning;
12:1:3:17 In situ investigation of self-induced GaN nanowire nucleation on Si
DOI:10.1063/1.3464956 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Cheze, C.;Geelhaar, L.;Trampert, A.;Riechert, H.;
12:1:3:18 Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
DOI:10.1063/1.3559618 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Gotschke, T.;Schumann, T.;Limbach, F.;Stoica, T.;Calarco, R.;
12:1:3:19 Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
DOI:10.1063/1.4830044 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Chen, Yen-Ting;Araki, Tsutomu;Palisaitis, Justinas;Persson, Per O. A.;Chen, Li-Chyong;Chen, Kuei-Hsien;Holtz, Per Olof;Birch, Jens;Nanishi, Yasushi;
12:1:3:20 The influence of Mg doping on the nucleation of self-induced GaN nanowires
DOI:10.1063/1.3693394 JN:AIP ADVANCES PY:2012
TC:8 AU: Limbach, F.;Caterino, R.;Gotschke, T.;Stoica, T.;Calarco, R.;Geelhaar, L.;Riechert, H.;
12:1:3:21 In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4721521 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Hestroffer, K.;Leclere, C.;Cantelli, V.;Bougerol, C.;Renevier, H.;Daudin, B.;
12:1:3:22 Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
DOI:10.1016/j.jcrysgro.2011.08.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:19 AU: Mata, Rafael;Hestroffer, Karine;Budagosky, Jorge;Cros, Ana;Bougerol, Catherine;Renevier, Hubert;Daudin, Bruno;
12:1:3:23 Physical origin of the incubation time of self-induced GaN nanowires
DOI:10.1063/1.3610964 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Consonni, V.;Trampert, A.;Geelhaar, L.;Riechert, H.;
12:1:3:24 Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
DOI:10.1088/0957-4484/25/45/455702 JN:NANOTECHNOLOGY PY:2014
TC:8 AU: Fernandez-Garrido, S.;Kaganer, V. M.;Hauswald, C.;Jenichen, B.;Ramsteiner, M.;Consonni, V.;Geelhaar, L.;Brandt, O.;
12:1:3:25 Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder
DOI:10.1063/1.4822110 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Sabelfeld, K. K.;Kaganer, V. M.;Limbach, F.;Dogan, P.;Brandt, O.;Geelhaar, L.;Riechert, H.;
12:1:3:26 Macro- and micro-strain in GaN nanowires on Si(111)
DOI:10.1088/0957-4484/22/29/295714 JN:NANOTECHNOLOGY PY:2011
TC:26 AU: Jenichen, B.;Brandt, O.;Pfueller, C.;Dogan, P.;Knelangen, M.;Trampert, A.;
12:1:3:27 On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
DOI:10.1063/1.3525170 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Alloing, B.;Vezian, S.;Tottereau, O.;Vennegues, P.;Beraudo, E.;Zuniga-Perez, J.;
12:1:3:28 Scaling growth kinetics of self-induced GaN nanowires
DOI:10.1063/1.3701591 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Dubrovskii, Vladimir G.;Consonni, Vincent;Geelhaar, Lutz;Trampert, Achim;Riechert, Henning;
12:1:3:29 Different growth rates for catalyst-induced and self-induced GaN nanowires
DOI:10.1063/1.3488010 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Cheze, C.;Geelhaar, L.;Jenichen, B.;Riechert, H.;
12:1:3:30 Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns
DOI:10.1088/0957-4484/22/41/415701 JN:NANOTECHNOLOGY PY:2011
TC:21 AU: Kong, X.;Ristic, J.;Sanchez-Garcia, M. A.;Calleja, E.;Trampert, A.;
12:1:3:31 Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
DOI:10.1063/1.3633522 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Brubaker, Matt D.;Levin, Igor;Davydov, Albert V.;Rourke, Devin M.;Sanford, Norman A.;Bright, Victor M.;Bertness, Kris A.;
12:1:3:32 Study on the coalescence of dislocation-free GaN nanowires on Si and SiOx
DOI:10.1116/1.4865915 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:3 AU: Fan, Shizhao;Zhao, Songrui;Liu, Xuedong;Mi, Zetian;
12:1:3:33 Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles
DOI:10.1103/PhysRevB.86.115325 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Kaganer, V. M.;Jenichen, B.;Brandt, O.;Fernandez-Garrido, S.;Dogan, P.;Geelhaar, L.;Riechert, H.;
12:1:3:34 Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4863456 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:6 AU: Sobanska, Marta;Klosek, Kamil;Borysiuk, Jolanta;Kret, Slawomir;Tchutchulasvili, Giorgi;Gieraltowska, Sylwia;Zytkiewicz, Zbigniew R.;
12:1:3:35 Influence of substrate material, orientation, and surface termination on GaN nanowire growth
DOI:10.1063/1.4892113 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Schuster, Fabian;Weiszer, Saskia;Hetzl, Martin;Winnerl, Andrea;Garrido, Jose A.;Stutzmann, Martin;
12:1:3:36 Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.05.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Agrawal, Mansi;Jain, Anubha;Rao, D. V. Sridhara;Pandey, Akhilesh;Goyal, Anshu;Kumar, Anand;Lamba, Sushil;Mehta, B. R.;Muraleedharan, K.;Muralidharan, R.;
12:1:3:37 In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires
DOI:10.1088/0957-4484/21/24/245705 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Knelangen, M.;Consonni, V.;Trampert, A.;Riechert, H.;
12:1:3:38 A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires
DOI:10.1063/1.4854495 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Hestroffer, Karine;Daudin, Bruno;
12:1:3:39 Structural and optical characterization of GaN nanowires
DOI:10.1063/1.4808097 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kamyczek, P.;Placzek-Popko, E.;Zytkiewicz, Z. R.;Gumienny, Z.;Zielony, E.;Sobanska, M.;Klosek, K.;Reszka, A.;
12:1:3:40 GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.12.081 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Dogan, Pinar;Brandt, Oliver;Pfueller, Carsten;Bluhm, Anne-Kathrin;Geelhaar, Lutz;Riechert, Henning;
12:1:3:41 Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers
DOI:10.1016/j.jcrysgro.2014.01.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Sobanska, M.;Wierzbicka, A.;Klosek, K.;Borysiuk, J.;Tchutchulashvili, G.;Gieraltowska, S.;Zytkiewicz, Z. R.;
12:1:3:42 Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications
DOI:10.1016/j.tsf.2011.10.151 JN:THIN SOLID FILMS PY:2012
TC:18 AU: Gieraltowska, S.;Wachnicki, L.;Witkowski, B. S.;Godlewski, M.;Guziewicz, E.;
12:1:3:43 Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires
DOI:10.1063/1.3567548 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Pfueller, C.;Brandt, O.;Flissikowski, T.;Grahn, H. T.;Ive, T.;Speck, J. S.;DenBaars, S. P.;
12:1:3:44 Modelling of X-ray diffraction curves for GaN nanowires on Si(111)
DOI:10.1016/j.jcrysgro.2014.01.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kladko, V. P.;Kuchuk, A. V.;Stanchu, H. V.;Safriuk, N. V.;Belyaev, A. E.;Wierzbicka, A.;Sobanska, M.;Klosek, K.;Zytkiewicz, Z. R.;
12:1:3:45 Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide
DOI:10.1016/j.jcrysgro.2011.08.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Goodman, Kevin;Protasenko, Vladimir;Verma, Jai;Kosel, Tom;Xing, Grace;Jena, Debdeep;
12:1:3:46 Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy
DOI:10.1016/j.jcrysgro.2013.08.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Tambo, H.;Asahi, H.;
12:1:3:47 Scaling thermodynamic model for the self-induced nucleation of GaN nanowires (vol 85, pg 165317, 2012)
DOI:10.1103/PhysRevB.85.199901 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Dubrovskii, Vladimir G.;Consonni, Vincent;Trampert, Achim;Geelhaar, Lutz;Riechert, Henning;
12:1:3:48 Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation
DOI:10.1155/2011/454730 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:2 AU: Shekari, L.;Abu Hassan, H.;Thahab, S. M.;Hassan, Z.;
12:1:3:49 Position-controlled and catalyst-free growth of ZnO nanocrystals by nanoparticle-assisted pulsed laser deposition
DOI:10.1007/s00339-014-8426-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Nakao, Shihomi;Muraoka, Yuuki;Higashihata, Mitsuhiro;Nakamura, Daisuke;Nakata, Yoshiki;Okada, Tatsuo;
12:1:4:1 Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
DOI:10.1063/1.3443734 JN:APPLIED PHYSICS LETTERS PY:2010
TC:120 AU: Sekiguchi, Hiroto;Kishino, Katsumi;Kikuchi, Akihiko;
12:1:4:2 Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
DOI:10.1016/j.jcrysgro.2011.04.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:26 AU: Bengoechea-Encabo, A.;Barbagini, F.;Fernandez-Garrido, S.;Grandal, J.;Ristic, J.;Sanchez-Garcia, M. A.;Calleja, E.;Jahn, U.;Luna, E.;Trampert, A.;
12:1:4:3 Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
DOI:10.1063/1.4804293 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Albert, S.;Bengoechea-Encabo, A.;Kong, X.;Sanchez-Garcia, M. A.;Calleja, E.;Trampert, A.;
12:1:4:4 Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
DOI:10.1088/0957-4484/25/43/435203 JN:NANOTECHNOLOGY PY:2014
TC:7 AU: Bengoechea-Encabo, A.;Albert, S.;Lopez-Romero, D.;Lefebvre, P.;Barbagini, F.;Torres-Pardo, A.;Gonzalez-Calbet, J. M.;Sanchez-Garcia, M. A.;Calleja, E.;
12:1:4:5 Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
DOI:10.1063/1.4775492 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Sam-Giao, D.;Mata, R.;Tourbot, G.;Renard, J.;Wysmolek, A.;Daudin, B.;Gayral, B.;
12:1:4:6 Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
DOI:10.1088/0957-4484/24/17/175303 JN:NANOTECHNOLOGY PY:2013
TC:17 AU: Albert, S.;Bengoechea-Encabo, A.;Sanchez-Garcia, M. A.;Kong, X.;Trampert, A.;Calleja, E.;
12:1:4:7 Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
DOI:10.1063/1.4796100 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Albert, S.;Bengoechea-Encabo, A.;Sanchez-Garcia, M. A.;Calleja, E.;Jahn, U.;
12:1:4:8 Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
DOI:10.1016/j.jcrysgro.2011.11.069 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:14 AU: Bengoechea-Encabo, A.;Albert, S.;Sanchez-Garcia, M. A.;Lopez, L. L.;Estrade, S.;Rebled, J. M.;Peiro, F.;Nataf, G.;de Merry, P.;Zuniga-Perez, J.;Calleja, E.;
12:1:4:9 Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
DOI:10.1063/1.3556643 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Lefebvre, P.;Fernandez-Garrido, S.;Grandal, J.;Ristic, J.;Sanchez-Garcia, M. -A.;Calleja, E.;
12:1:4:10 Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
DOI:10.1021/nl504099s JN:NANO LETTERS PY:2015
TC:1 AU: Gacevic, Zarko;Gomez Sanchez, Daniel;Calleja, Enrique;
12:1:4:11 Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution
DOI:10.1021/acs.nanolett.5b01278 JN:NANO LETTERS PY:2015
TC:0 AU: Urban, A.;Mueller, M.;Karbaum, C.;Schmidt, G.;Veit, P.;Malindretos, J.;Bertram, F.;Christen, J.;Rizzi, A.;
12:1:4:12 Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
DOI:10.1063/1.4846455 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Bengoechea-Encabo, A.;Albert, S.;Zuniga-Perez, J.;de Mierry, P.;Trampert, A.;Barbagini, F.;Sanchez-Garcia, M. A.;Calleja, E.;
12:1:4:13 Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates
DOI:10.1063/1.4894802 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Albert, S.;Bengoechea-Encabo, A.;Zuniga-Perez, J.;de Mierry, P.;Val, P.;Sanchez-Garcia, M. A.;Calleja, E.;
12:1:4:14 Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.01.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Albert, S.;Bengoechea-Encabo, A.;Sabido-Siller, M.;Mueller, M.;Schmidt, G.;Metzner, S.;Veit, P.;Bertram, F.;Sanchez-Garcia, M. A.;Christen, J.;Calleja, E.;
12:1:4:15 Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
DOI:10.1088/0957-4484/23/48/485701 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Kong, X.;Albert, S.;Bengoechea-Encabo, A.;Sanchez-Garcia, M. A.;Calleja, E.;Trampert, A.;
12:1:4:16 Optical spectroscopy of cubic GaN in nanowires
DOI:10.1063/1.3478004 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Renard, J.;Tourbot, G.;Sam-Giao, D.;Bougerol, C.;Daudin, B.;Gayral, B.;
12:1:4:17 Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
DOI:10.1063/1.4728115 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Albert, S.;Bengoechea-Encabo, A.;Lefebvre, P.;Barbagini, F.;Sanchez-Garcia, M. A.;Calleja, E.;Jahn, U.;Trampert, A.;
12:1:4:18 Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface
DOI:10.1063/1.4751986 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Kumar, Praveen;Tuteja, Mohit;Kesaria, Manoj;Waghmare, U. V.;Shivaprasad, S. M.;
12:1:4:19 Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
DOI:10.1063/1.3644986 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Albert, S.;Bengoechea-Encabo, A.;Lefebvre, P.;Sanchez-Garcia, M. A.;Calleja, E.;Jahn, U.;Trampert, A.;
12:1:4:20 Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates
DOI:10.1016/j.jcrysgro.2015.02.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yamano, Koji;Kishino, Katsumi;Sekiguchi, Hiroto;Oto, Takao;Wakahara, Akihiro;Kawakami, Yoichi;
12:1:4:21 Well-arranged novel InGaN hexagonal nanoplates at the tops of nitrogen-polarity GaN nanocolumn arrays
DOI:10.1063/1.3687237 JN:AIP ADVANCES PY:2012
TC:3 AU: Kouno, Tetsuya;Kishino, Katsumi;
12:1:4:22 Fabrication of densely packed arrays of GaN nanostructures on nano-imprinted substrates
DOI:10.1016/j.jcrysgro.2011.01.078 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Shih, F. Y.;Kobayashi, A.;Inoue, S.;Ohta, J.;Fujioka, H.;
12:1:4:23 Growth of group III nitride nanostructures on nano-imprinted sapphire substrates
DOI:10.1016/j.tsf.2011.04.120 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Shih, F. Y.;Kobayashi, A.;Inoue, S.;Ohta, J.;Oshima, M.;Fujioka, H.;
12:1:5:1 Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3275888 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:53 AU: Sanford, N. A.;Blanchard, P. T.;Bertness, K. A.;Mansfield, L.;Schlager, J. B.;Sanders, A. W.;Roshko, A.;Burton, B. B.;George, S. M.;
12:1:5:2 Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire
DOI:10.1021/nl1010977 JN:NANO LETTERS PY:2010
TC:55 AU: Rigutti, L.;Tchernycheva, M.;Bugallo, A. De Luna;Jacopin, G.;Julien, F. H.;Zagonel, L. F.;March, K.;Stephan, O.;Kociak, M.;Songmuang, R.;
12:1:5:3 Room-Temperature Photodetection Dynamics of Single GaN Nanowires
DOI:10.1021/nl2032684 JN:NANO LETTERS PY:2012
TC:31 AU: Gonzalez-Posada, F.;Songmuang, R.;Den Hertog, M.;Monroy, E.;
12:1:5:4 Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors
DOI:10.1021/nl302890f JN:NANO LETTERS PY:2012
TC:17 AU: den Hertog, M. I.;Gonzalez-Posada, F.;Songmuang, R.;Rouviere, J. L.;Fournier, T.;Fernandez, B.;Monroy, E.;
12:1:5:5 Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air
DOI:10.1063/1.4802689 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:10 AU: Sanford, N. A.;Robins, L. H.;Blanchard, P. T.;Soria, K.;Klein, B.;Eller, B. S.;Bertness, K. A.;Schlager, J. B.;Sanders, A. W.;
12:1:5:6 Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles
DOI:10.1088/0957-4484/21/31/315201 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Bugallo, Andres de Luna;Tchernycheva, Maria;Jacopin, Gwenole;Rigutti, Lorenzo;Julien, Francois Henri;Chou, Shu-Ting;Lin, Yuan-Ting;Tseng, Po-Han;Tu, Li-Wei;
12:1:5:7 Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors
DOI:10.1088/0957-4484/23/17/175501 JN:NANOTECHNOLOGY PY:2012
TC:20 AU: Aluri, Geetha S.;Motayed, Abhishek;Davydov, Albert V.;Oleshko, Vladimir P.;Bertness, Kris A.;Sanford, Norman A.;Mulpuri, Rao V.;
12:1:5:8 Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
DOI:10.1088/0957-4484/22/29/295503 JN:NANOTECHNOLOGY PY:2011
TC:24 AU: Aluri, Geetha S.;Motayed, Abhishek;Davydov, Albert V.;Oleshko, Vladimir P.;Bertness, Kris A.;Sanford, Norman A.;Rao, Mulpuri V.;
12:1:5:9 Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires
DOI:10.1103/PhysRevB.84.205443 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Chen, Hsin-Yi;Chen, Reui-San;Rajan, Nitin K.;Chang, Fu-Chieh;Chen, Li-Chyong;Chen, Kuei-Hsien;Yang, Ying-Jay;Reed, Mark A.;
12:1:5:10 Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
DOI:10.1063/1.4808017 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Gonzalez-Posada, F.;Songmuang, R.;Den Hertog, M.;Monroy, E.;
12:1:5:11 Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires
DOI:10.1021/nl301898m JN:NANO LETTERS PY:2012
TC:21 AU: Parkinson, Patrick;Dodson, Christopher;Joyce, Hannah J.;Bertness, Kris A.;Sanford, Norman A.;Herz, Laura M.;Johnston, Michael B.;
12:1:5:12 Influence of oxygen in architecting large scale nonpolar GaN nanowires
DOI:10.1039/c3tc31804d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Patsha, Avinash;Amirthapandian, S.;Pandian, Ramanathaswamy;Dhara, S.;
12:1:5:13 Measurement of the electrostatic edge effect in wurtzite GaN nanowires
DOI:10.1063/1.4902873 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Henning, Alex;Klein, Benjamin;Bertness, Kris A.;Blanchard, Paul T.;Sanford, Norman A.;Rosenwaks, Yossi;
12:1:5:14 Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study
DOI:10.1063/1.4752230 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Chen, R. S.;Tsai, H. Y.;Huang, Y. S.;Chen, Y. T.;Chen, L. C.;Chen, K. H.;
12:1:5:15 Hidden surface states at non-polar GaN (10(1)over-bar0) facets: Intrinsic pinning of nanowires
DOI:10.1063/1.4823723 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lymperakis, L.;Weidlich, P. H.;Eisele, H.;Schnedler, M.;Nys, J. -P.;Grandidier, B.;Stievenard, D.;Dunin-Borkowski, R. E.;Neugebauer, J.;Ebert, Ph.;
12:1:5:16 Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires
DOI:10.1063/1.4860968 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Jacopin, G.;Bugallo, A. De Luna;Rigutti, L.;Lavenus, P.;Julien, F. H.;Lin, Yuan-Ting;Tu, Li-Wei;Tchernycheva, M.;
12:1:5:17 Thermal oxidation of polycrystalline tungsten nanowire
DOI:10.1063/1.3504248 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: You, G. F.;Thong, John T. L.;
12:1:5:18 Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers
DOI:10.1116/1.3276513 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Savich, G. R.;Pedrazzani, J. R.;Maimon, S.;Wicks, G. W.;
12:1:6:1 Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
DOI:10.1021/nl103549t JN:NANO LETTERS PY:2011
TC:57 AU: Zagonel, Luiz Fernando;Mazzucco, Stefano;Tence, Marcel;March, Katia;Bernard, Romain;Laslier, Benoit;Jacopin, Gwenole;Tchernycheva, Maria;Rigutti, Lorenzo;Julien, Francois H.;Songmuang, Rudeesun;Kociak, Mathieu;
12:1:6:2 Spatial Distribution of Defect Luminescence in GaN Nanowires
DOI:10.1021/nl903517t JN:NANO LETTERS PY:2010
TC:56 AU: Li, Qiming;Wang, George T.;
12:1:6:3 Carrier depletion and exciton diffusion in a single ZnO nanowire
DOI:10.1088/0957-4484/22/47/475704 JN:NANOTECHNOLOGY PY:2011
TC:22 AU: Hwang, Jun-Seok;Donatini, Fabrice;Pernot, Julien;Thierry, Robin;Ferret, Pierre;Dang, Le Si;
12:1:6:4 Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires
DOI:10.1088/0957-4484/23/45/455205 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Zagonel, L. F.;Rigutti, L.;Tchernycheva, M.;Jacopin, G.;Songmuang, R.;Kociak, M.;
12:1:6:5 Correlation of doping, structure, and carrier dynamics in a single GaN nanorod
DOI:10.1063/1.4812241 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Zhou, Xiang;Lu, Ming-Yen;Lu, Yu-Jung;Gwo, Shangjr;Gradecak, Silvija;
12:1:6:6 GaN nanowire surface state observed using deep level optical spectroscopy
DOI:10.1063/1.3404182 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Armstrong, A.;Li, Q.;Lin, Y.;Talin, A. A.;Wang, G. T.;
12:1:6:7 Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
DOI:10.1063/1.3573832 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Baird, Lee;Ong, C. P.;Cole, R. Adam;Haegel, N. M.;Talin, A. Alec;Li, Qiming;Wang, George T.;
12:1:6:8 The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires
DOI:10.1063/1.4756915 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kar, Ayan;Li, Qiming;Upadhya, Prashanth C.;Seo, Min Ah;Wright, Jeremy;Luk, T. S.;Wang, George T.;Prasankumar, Rohit P.;
12:1:6:9 Determination of diffusion lengths in nanowires using cathodoluminescence
DOI:10.1063/1.3473829 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Gustafsson, Anders;Bolinsson, Jessica;Skold, Niklas;Samuelson, Lars;
12:1:6:10 Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states
DOI:10.1103/PhysRevB.81.195313 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Mojica, D. Camacho;Niquet, Yann-Michel;
12:1:6:11 Confocal filtering in cathodoluminescence microscopy of nanostructures
DOI:10.1063/1.4885833 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Narvaez, Angela C.;Weppelman, I. Gerward C.;Moerland, Robert J.;Hoogenboom, Jacob P.;Kruit, Pieter;
12:1:6:12 A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures
DOI:10.1063/1.4897408 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tizei, L. H. G.;Meuret, S.;March, K.;Hestroffer, K.;Auzelle, T.;Daudin, B.;Kociak, M.;
12:1:6:13 Spatially Resolved Quantum Nano-Optics of Single Photons Using an Electron Microscope
DOI:10.1103/PhysRevLett.110.153604 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:11 AU: Tizei, L. H. G.;Kociak, M.;
12:1:6:14 Spectrally and spatially resolved cathodoluminescence of nanodiamonds: local variations of the NV0 emission properties
DOI:10.1088/0957-4484/23/17/175702 JN:NANOTECHNOLOGY PY:2012
TC:15 AU: Tizei, L. H. G.;Kociak, M.;
12:1:6:15 Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires
DOI:10.1063/1.3702797 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Oh, Eunsoon;Lee, Byoung Woo;Shim, So-Jeong;Choi, Heon-Jin;Son, Byoung Hee;Ahn, Yeong Hwan;Dang, Le Si;
12:1:6:16 Reassembling of Ni and Pt catalyst in the vapor-liquid-solid growth of GaN nanowires
DOI:10.1016/j.matlet.2011.04.066 JN:MATERIALS LETTERS PY:2011
TC:13 AU: Park, Eunmi;Shim, Sojung;Ha, Ryong;Oh, Eunsoon;Lee, Byoung Woo;Choi, Heon-Jin;
12:1:6:17 Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching
DOI:10.1088/0957-4484/25/25/255301 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Haab, Anna;Mikulics, Martin;Sutter, Eli;Jin, Jiehong;Stoica, Toma;Kardynal, Beata;Rieger, Torsten;Gruetzmacher, Detlev;Hardtdegen, Hilde;
12:1:7:1 Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System
DOI:10.1021/nl4034768 JN:NANO LETTERS PY:2014
TC:11 AU: Rigutti, Lorenzo;Blum, Ivan;Shinde, Deodatta;Hernandez-Maldonado, David;Lefebvre, Williams;Houard, Jonathan;Vurpillot, Francois;Vella, Angela;Tchernycheva, Maria;Durand, Christophe;Eymery, Joel;Deconihout, Bernard;
12:1:7:2 The structural properties of GaN/AlN core-shell nanocolumn heterostructures
DOI:10.1088/0957-4484/21/41/415702 JN:NANOTECHNOLOGY PY:2010
TC:34 AU: Hestroffer, K.;Mata, R.;Camacho, D.;Leclere, C.;Tourbot, G.;Niquet, Y. M.;Cros, A.;Bougerol, C.;Renevier, H.;Daudin, B.;
12:1:7:3 Correlation of optical and structural properties of GaN/AlN core-shell nanowires
DOI:10.1103/PhysRevB.83.155320 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Rigutti, L.;Jacopin, G.;Largeau, L.;Galopin, E.;Bugallo, A. De Luna;Julien, F. H.;Harmand, J. -C.;Glas, F.;Tchernycheva, M.;
12:1:7:4 Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering
DOI:10.1021/nl401277y JN:NANO LETTERS PY:2013
TC:8 AU: Poliani, E.;Wagner, M. R.;Reparaz, J. S.;Mand, M.;Strassburg, M.;Kong, X.;Trampert, A.;Sotomayor Torres, C. M.;Hoffmann, A.;Maultzsch, J.;
12:1:7:5 Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering
DOI:10.1103/PhysRevB.83.115417 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Laneuville, V.;Demangeot, F.;Pechou, R.;Salles, P.;Ponchet, A.;Jacopin, G.;Rigutti, L.;Bugallo, A. de Luna;Tchernycheva, M.;Julien, F. H.;March, K.;Zagonel, L. F.;Songmuang, R.;
12:1:7:6 Size and shape effects in the Raman scattering by single GaN nanowires
DOI:10.1063/1.4839975 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Wang, J.;Demangeot, F.;Pechou, R.;Bayon, C.;Mlayah, A.;Daudin, B.;
12:1:7:7 Highly polarized Raman scattering anisotropy in single GaN nanowires
DOI:10.1063/1.3343347 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Schaefer-Nolte, E. O.;Stoica, T.;Gotschke, T.;Limbach, F.;Sutter, E.;Sutter, P.;Calarco, R.;
12:1:7:8 Si doping effects on (In,Ga)N nanowires
DOI:10.1063/1.4905257 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kamimura, J.;Ramsteiner, M.;Geelhaar, L.;Riechert, H.;
12:1:7:9 Anticrossing of axial and planar surface-related phonon modes in Raman spectra of self-assembled GaN nanowires
DOI:10.1103/PhysRevB.85.155432 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: Wang, J.;Demangeot, F.;Pechou, R.;Ponchet, A.;Cros, A.;Daudin, B.;
12:1:7:10 Surface optical phonon modes in GaN nanowire arrays: Dependence on nanowire density and diameter
DOI:10.1103/PhysRevB.85.035322 JN:PHYSICAL REVIEW B PY:2012
TC:14 AU: Mata, R.;Cros, A.;Hestroffer, K.;Daudin, B.;
12:1:7:11 Molecular beam epitaxy growth and optical properties of AlN nanowires
DOI:10.1063/1.3315943 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Landre, O.;Fellmann, V.;Jaffrennou, P.;Bougerol, C.;Renevier, H.;Cros, A.;Daudin, B.;
12:1:7:12 Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes
DOI:10.1063/1.4801779 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Cros, A.;Mata, R.;Hestroffer, K.;Daudin, B.;
12:1:7:13 Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires
DOI:10.1088/0957-4484/23/32/325701 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Jacopin, G.;Rigutti, L.;Bellei, S.;Lavenus, P.;Julien, F. H.;Davydov, A. V.;Tsvetkov, D.;Bertness, K. A.;Sanford, N. A.;Schlager, J. B.;Tchernycheva, M.;
12:1:7:14 Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates
DOI:10.1063/1.4881558 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Wang, Q.;Zhao, S.;Connie, A. T.;Shih, I.;Mi, Z.;Gonzalez, T.;Andrews, M. P.;Du, X. Z.;Lin, J. Y.;Jiang, H. X.;
12:1:7:15 Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy
DOI:10.1063/1.4798245 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Titus, J.;Nguyen, H. P. T.;Mi, Z.;Perera, A. G. U.;
12:1:7:16 Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
DOI:10.1103/PhysRevB.81.045411 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Rigutti, L.;Tchernycheva, M.;Bugallo, A. De Luna;Jacopin, G.;Julien, F. H.;Furtmayr, F.;Stutzmann, M.;Eickhoff, M.;Songmuang, R.;Fortuna, F.;
12:1:7:17 Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy
DOI:10.1088/0957-4484/23/42/425703 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Jalabert, D.;Cure, Y.;Hestroffer, K.;Niquet, Y. M.;Daudin, B.;
12:1:7:18 Modifying optical properties of GaN nanowires by Ga2O3 overgrowth
DOI:10.1116/1.3668122 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Lee, Yi-Kuang;Medina, Henry;Chiu, Po-Wen;
12:1:8:1 On-Chip Optical Interconnects Made with Gallium Nitride Nanowires
DOI:10.1021/nl303510h JN:NANO LETTERS PY:2013
TC:14 AU: Brubaker, Matt D.;Blanchard, Paul T.;Schlager, John B.;Sanders, Aric W.;Roshko, Alexana;Duff, Shannon M.;Gray, Jason M.;Bright, Victor M.;Sanford, Norman A.;Bertness, Kris A.;
12:1:8:2 Carrier confinement in GaN/AlxGa1-xN nanowire heterostructures (0 < x <= 1)
DOI:10.1103/PhysRevB.84.205303 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Furtmayr, Florian;Teubert, Joerg;Becker, Pascal;Conesa-Boj, Sonia;Ramon Morante, Joan;Chernikov, Alexey;Schaefer, Soeren;Chatterjee, Sangam;Arbiol, Jordi;Eickhoff, Martin;
12:1:8:3 Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures
DOI:10.1021/nl501845m JN:NANO LETTERS PY:2014
TC:2 AU: Muessener, Jan;Teubert, Joerg;Hille, Pascal;Schaefer, Markus;Schoermann, Joerg;de la Mata, Maria;Arbiol, Jordi;Eickhoff, Martin;
12:1:8:4 Growth, structural and optical properties of AlGaN nanowires in the whole composition range
DOI:10.1088/0957-4484/24/11/115704 JN:NANOTECHNOLOGY PY:2013
TC:13 AU: Pierret, A.;Bougerol, C.;Murcia-Mascaros, S.;Cros, A.;Renevier, H.;Gayral, B.;Daudin, B.;
12:1:8:5 Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
DOI:10.1063/1.4868411 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hille, P.;Muessener, J.;Becker, P.;de la Mata, M.;Rosemann, N.;Magen, C.;Arbiol, J.;Teubert, J.;Chatterjee, S.;Schoermann, J.;Eickhoff, M.;
12:1:8:6 Bias-Enhanced Optical pH Response of Group III-Nitride Nanowires
DOI:10.1021/nl303021v JN:NANO LETTERS PY:2012
TC:15 AU: Wallys, Jens;Teubert, Joerg;Furtmayr, Florian;Hofmann, Detlev M.;Eickhoff, Martin;
12:1:8:7 Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc
DOI:10.1088/0957-4484/24/12/125201 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Jacopin, G.;Rigutti, L.;Teubert, J.;Julien, F. H.;Furtmayr, F.;Komninou, Ph;Kehagias, Th;Eickhoff, M.;Tchernycheva, M.;
12:1:8:8 Toward Discrete Axial p-n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
DOI:10.1007/s11664-013-2498-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:4 AU: Brubaker, Matt D.;Blanchard, Paul T.;Schlager, John B.;Sanders, Aric W.;Herrero, Andrew M.;Roshko, Alexana;Duff, Shannon M.;Harvey, Todd E.;Bright, Victor M.;Sanford, Norman A.;Bertness, Kris A.;
12:1:8:9 Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4820264 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Schoermann, Joerg;Hille, Pascal;Schaefer, Markus;Muessener, Jan;Becker, Pascal;Klar, Peter J.;Kleine-Boymann, Matthias;Rohnke, Marcus;de la Mata, Maria;Arbiol, Jordi;Hofmann, Detlev M.;Teubert, Joerg;Eickhoff, Martin;
12:1:8:10 GaN nanodiscs embedded in nanowires as optochemical transducers
DOI:10.1088/0957-4484/22/27/275505 JN:NANOTECHNOLOGY PY:2011
TC:24 AU: Teubert, J.;Becker, P.;Furtmayr, F.;Eickhoff, M.;
12:1:8:11 Origin of energy dispersion in AlxGa1-xN/GaN nanowire quantum discs with low Al content
DOI:10.1103/PhysRevB.82.235308 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Rigutti, L.;Teubert, J.;Jacopin, G.;Fortuna, F.;Tchernycheva, M.;Bugallo, A. De Luna;Julien, F. H.;Furtmayr, F.;Stutzmann, M.;Eickhoff, M.;
12:1:8:12 Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources
DOI:10.1063/1.3597211 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Lu, Yu-Jung;Lin, Hon-Way;Chen, Hung-Ying;Yang, Yu-Chen;Gwo, Shangjr;
12:1:8:13 Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires
DOI:10.1063/1.3646389 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Songmuang, R.;Kalita, D.;Sinha, P.;den Hertog, M.;Andre, R.;Ben, T.;Gonzalez, D.;Mariette, H.;Monroy, E.;
12:1:8:14 Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
DOI:10.1063/1.4904989 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Himwas, C.;den Hertog, M.;Dang, Le Si;Monroy, E.;Songmuang, R.;
12:1:8:15 Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence
DOI:10.1088/0957-4484/24/30/305703 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Pierret, A.;Bougerol, C.;Gayral, B.;Kociak, M.;Daudin, B.;
12:1:8:16 Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
DOI:10.1088/0957-4484/23/36/365203 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Herrero, Andrew M.;Blanchard, Paul T.;Sanders, Aric;Brubaker, Matt D.;Sanford, Norman A.;Roshko, Alexana;Bertness, Kris A.;
12:1:8:17 Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.11.136 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Mizerov, A. M.;Jmerik, V. N.;Yagovkina, M. A.;Troshkov, S. I.;Kop'ev, P. S.;Ivanov, S. V.;
12:1:9:1 Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
DOI:10.1103/PhysRevB.81.045302 JN:PHYSICAL REVIEW B PY:2010
TC:54 AU: Brandt, Oliver;Pfueller, Carsten;Cheze, Caroline;Geelhaar, Lutz;Riechert, Henning;
12:1:9:2 Surface-induced effects in GaN nanowires
DOI:10.1557/jmr.2011.211 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:20 AU: Calarco, Raffaella;Stoica, Toma;Brandt, Oliver;Geelhaar, Lutz;
12:1:9:3 Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
DOI:10.1103/PhysRevB.82.045320 JN:PHYSICAL REVIEW B PY:2010
TC:25 AU: Pfueller, Carsten;Brandt, Oliver;Grosse, Frank;Flissikowski, Timur;Cheze, Caroline;Consonni, Vincent;Geelhaar, Lutz;Grahn, Holger T.;Riechert, Henning;
12:1:9:4 Ultrafast carrier dynamics in GaN nanorods
DOI:10.1063/1.4902927 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yang, Chi-Yuan;Chia, Chih-Ta;Chen, Hung-Ying;Gwo, Shangjr;Lin, Kung-Hsuan;
12:1:9:5 Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
DOI:10.1103/PhysRevB.88.075312 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Hauswald, Christian;Flissikowski, Timur;Gotschke, Tobias;Calarco, Raffaella;Geelhaar, Lutz;Grahn, Holger T.;Brandt, Oliver;
12:1:9:6 Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires
DOI:10.1063/1.4747208 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Pfueller, C.;Ramsteiner, M.;Brandt, O.;Grosse, F.;Rathsfeld, A.;Schmidt, G.;Geelhaar, L.;Riechert, H.;
12:1:9:7 Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires
DOI:10.1063/1.3553418 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Schlager, John B.;Sanford, Norman A.;Bertness, Kris A.;Roshko, Alexana;
12:1:9:8 Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film
DOI:10.1021/acs.nanolett.5b00251 JN:NANO LETTERS PY:2015
TC:0 AU: Woelz, M.;Hauswald, C.;Flissikowski, T.;Gotschke, T.;Fernandez-Garrido, S.;Brandt, O.;Grahn, H. T.;Geelhaar, L.;Riechert, H.;
12:1:9:9 Time-resolved photoluminescence spectroscopy of individual GaN nanowires
DOI:10.1103/PhysRevB.86.041302 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Gorgis, A.;Flissikowski, T.;Brandt, O.;Cheze, C.;Geelhaar, L.;Riechert, H.;Grahn, H. T.;
12:1:9:10 Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
DOI:10.1063/1.4868131 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Nogues, Gilles;Auzelle, Thomas;Den Hertog, Martien;Gayral, Bruno;Daudin, Bruno;
12:1:9:11 XPS study of triangular GaN nano/micro-needles grown by MOCVD technique
DOI:10.1016/j.mseb.2014.03.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Kumar, Mukesh;Kumar, Ashish;Thapa, S. B.;Christiansen, S.;Singh, R.;
12:1:9:12 Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air
DOI:10.1063/1.4765031 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Corfdir, Pierre;Lefebvre, Pierre;
12:1:9:13 Influence of surface optical phonons on exciton binding energies of a quasi-one-dimensional wurtzite GaN-based nanowire: Quantum size effect
DOI:10.1063/1.4794527 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Zhang, Li;Shi, J. J.;
12:1:9:14 Surface polaronic effect on donor-impurity states of a wurtzite nitride nanowire: Two-parameter variational approach
DOI:10.1063/1.3603017 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Zhang, Li;Shi, J. J.;Shao, P. M.;
12:1:10:1 Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis
DOI:10.1021/nl300840q JN:NANO LETTERS PY:2012
TC:60 AU: de la Mata, Maria;Magen, Cesar;Gazquez, Jaume;Utama, Muhammad Iqbal Bakti;Heiss, Martin;Lopatin, Sergei;Furtmayr, Florian;Fernandez-Rojas, Carlos J.;Peng, Bo;Ramon Morante, Joan;Rurali, Riccardo;Eickhoff, Martin;Fontcuberta i Morral, Anna;Xiong, Qihua;Arbiol, Jordi;
12:1:10:2 Self-Assembled GaN Nanowires on Diamond
DOI:10.1021/nl203872q JN:NANO LETTERS PY:2012
TC:23 AU: Schuster, Fabian;Furtmayr, Florian;Zamani, Reza;Magen, Cesar;Morante, Joan R.;Arbiol, Jordi;Garrido, Jose A.;Stutzmann, Martin;
12:1:10:3 Position-Controlled Growth of GaN Nanowires and Nanotubes on Diamond by Molecular Beam Epitaxy
DOI:10.1021/nl504446r JN:NANO LETTERS PY:2015
TC:1 AU: Schuster, Fabian;Hetzl, Martin;Weiszer, Saskia;Garrido, Jose A.;de la Mata, Maria;Magen, Cesar;Arbiol, Jordi;Stutzmann, Martin;
12:1:10:4 p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity
DOI:10.1021/nn406134e JN:ACS NANO PY:2014
TC:16 AU: Schuster, Fabian;Laumer, Bernhard;Zamani, Reza R.;Magen, Cesar;Ramon Morante, Joan;Arbiol, Jordi;Stutzmann, Martin;
12:1:10:5 Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity
DOI:10.1063/1.4880161 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Schuster, Fabian;Hetzl, Martin;Magen, Cesar;Arbiol, Jordi;Garrido, Jose A.;Stutzmann, Martin;
12:1:11:1 Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
DOI:10.1021/nl300121p JN:NANO LETTERS PY:2013
TC:35 AU: Lim, Sung Keun;Crawford, Sam;Haberfehlner, Georg;Gradecak, Silvija;
12:1:11:2 Using seed particle composition to control structural and optical properties of GaN nanowires
DOI:10.1088/0957-4484/23/28/285603 JN:NANOTECHNOLOGY PY:2012
TC:21 AU: Zhou, Xiang;Chesin, Jordan;Crawford, Samuel;Gradecak, Silvija;
12:1:11:3 Growth mechanism of GaN nanowires: preferred nucleation site and effect of hydrogen
DOI:10.1088/0957-4484/21/34/345604 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Lim, Sung K.;Crawford, Samuel;Gradecak, Silvija;
12:1:11:4 Dynamic Visualization of Axial p-n Junctions in Single Gallium Nitride Nanorods under Electrical Bias
DOI:10.1021/nn4034986 JN:ACS NANO PY:2013
TC:5 AU: Lu, Yu-Jung;Lu, Ming-Yen;Yang, Yu-Chen;Chen, Hung-Ying;Chen, Lih-Juann;Gwo, Shangjr;
12:1:11:5 Catalyst-Directed Crystallographic Orientation Control of GaN Nanowire Growth
DOI:10.1021/nl502079v JN:NANO LETTERS PY:2014
TC:4 AU: Kuykendall, Tevye R.;Altoe, M. Virginia P.;Ogletree, D. Frank;Aloni, Shaul;
12:1:11:6 GaN nanowire/thin film vertical structure p-n junction light-emitting diodes
DOI:10.1063/1.4860971 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Hong, Young Joon;Lee, Chul-Ho;Park, Jun Beom;An, Sung Jin;Yi, Gyu-Chul;
12:1:11:7 From GaN to ZnGa2O4 through a Low-Temperature Process: Nanotube and Heterostructure Arrays
DOI:10.1021/am404158f JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Lu, Ming-Yen;Zhou, Xiang;Chiu, Cheng-Yao;Crawford, Samuel;Gradecak, Silvija;
12:1:11:8 Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate
DOI:10.1016/j.jcrysgro.2014.12.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Rafique, Subrina;Han, Lu;Zhao, Hongping;
12:1:11:9 Study of the effect of annealing temperature on structure of TiO2 nanowires by oxidation annealing
DOI:10.1016/j.tsf.2013.02.065 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Ali, A. Morteza;Sani, S. Ramezani;
12:1:12:1 Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence
DOI:10.1021/nl203982p JN:NANO LETTERS PY:2012
TC:31 AU: Carnevale, Santino D.;Kent, Thomas F.;Phillips, Patrick J.;Mills, Michael J.;Rajan, Siddharth;Myers, Roberto C.;
12:1:12:2 Diffusion injected multi-quantum well light-emitting diode structure
DOI:10.1063/1.4866343 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Riuttanen, L.;Kivisaari, P.;Nykanen, H.;Svensk, O.;Suihkonen, S.;Oksanen, J.;Tulkki, J.;Sopanen, M.;
12:1:12:3 Current injection to free-standing III-N nanowires by bipolar diffusion
DOI:10.1063/1.4813754 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Kivisaari, Pyry;Oksanen, Jani;Tulkki, Jukka;
12:1:12:4 Full-Scale Characterization of UVLED AlxGa1-xN Nanowires via Advanced Electron Microscopy
DOI:10.1021/nn4021407 JN:ACS NANO PY:2013
TC:4 AU: Phillips, Patrick J.;Carnevale, Santino D.;Kumar, Rajan;Myers, Roberto C.;Klie, Robert F.;
12:1:12:5 Semipolar InN/AlN multiple quantum wells on {10(1)over-bar5} faceted AlN on silicon
DOI:10.1063/1.4821069 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yang, J.;Yang, F.;Kent, T. F.;Mills, M. J.;Myers, R. C.;
12:1:13:1 InGaN/GaN Core-Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact
DOI:10.1021/nl5001295 JN:NANO LETTERS PY:2014
TC:14 AU: Tchernycheva, M.;Layenus, P.;Zhang, H.;Babichev, A. V.;Jacopin, G.;Shahmohammadi, M.;Julien, F. H.;Ciechonski, R.;Vescovi, G.;Kryliouk, O.;
12:1:13:2 Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires
DOI:10.1021/nl503616w JN:NANO LETTERS PY:2015
TC:2 AU: Erhard, N.;Sarwar, A. T. M. Golam;Yang, F.;McComb, D. W.;Myers, R. C.;Holleitner, A. W.;
12:1:13:3 Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells
DOI:10.1063/1.4757990 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Sarwar, A. T. M. Golam;Myers, R. C.;
12:1:13:4 Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires
DOI:10.1007/s11664-013-2544-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:4 AU: Laskar, Masihhur R.;Carnevale, Santino D.;Sarwar, A. T. M. Golam;Phillips, Patrick J.;Mills, Michael J.;Myers, Roberto C.;
12:1:14:1 Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy
DOI:10.1002/adfm.201000381 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:40 AU: Bertness, Kris A.;Sanders, Aric W.;Rourke, Devin M.;Harvey, Todd E.;Roshko, Alexana;Schlager, John B.;Sanford, Norman A.;
12:1:14:2 Two step growth of high quality long n-GaN:Si nanowires using mu-GaN seed on Si(111) by metalorganic chemical vapor deposition
DOI:10.1016/j.tsf.2013.08.105 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Kim, Min-Hee;Park, Ji-Hyeon;Yoo, Hee-il;Kissinger, Suthan;Kim, Jin Soo;Baek, Byung June;Lee, Cheul-Ro;
12:1:14:3 The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD
DOI:10.1016/j.jcrysgro.2009.12.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Ra, Yong-Ho;Navamathavan, R.;Lee, Young-Min;Kim, Dong-Wook;Kim, Jin-Soo;Lee, In-Hwan;Lee, Cheul-Ro;
12:1:14:4 Nonlinear Photonic Diode Behavior in Energy-Graded Core Shell Quantum Well Semiconductor Rod
DOI:10.1021/nl5007905 JN:NANO LETTERS PY:2014
TC:2 AU: Ko, Suk-Min;Gong, Su-Hyun;Cho, Yong-Hoon;
12:1:14:5 The growth behavior of GaN NWs on Si(111) by the dispersion of Au colloid catalyst using pulsed MOCVD
DOI:10.1016/j.jcrysgro.2011.01.070 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Park, Ji-Hyoen;Navamathavan, R.;Ra, Yeorn-Bo;Ra, Yong-Ho;Kim, Jin-Soo;Lee, Cheul-Ro;
12:1:14:6 Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer
DOI:10.1016/j.ceramint.2014.05.119 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Sun, Rui;Zhang, Hua-Yu;Wang, Gui-Gen;Han, Jie-Cai;Zhu, Can;Liu, Xiao-Peng;Cui, Lin;
12:1:14:7 Selective area growth of GaN nanowires using metalorganic chemical vapor deposition on nano-patterned Si(111) formed by the etching of nano-sized Au droplets
DOI:10.1016/j.tsf.2011.06.083 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Song, Ki-Young;Navamathavan, R.;Park, Ji-Hyeon;Ra, Yeom-Bo;Ra, Yong-Ho;Kim, Jin-Soo;Lee, Cheul-Ro;
12:1:14:8 Size effects of nano-pattern in Si(111) substrate on the selective growth behavior of GaN nanowires by MOCVD
DOI:10.1016/j.materresbull.2011.11.039 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Park, Ji-Hyeon;Navamathavan, R.;Lee, Cheul-Ro;
12:1:15:1 Ultra long and Defect-Free GaN Nanowires Grown by the HVPE Process
DOI:10.1021/nl403687h JN:NANO LETTERS PY:2014
TC:9 AU: Avit, Geoffrey;Lekhal, Kaddour;Andre, Yamina;Bougerol, Catherine;Reveret, Francois;Leymarie, Joel;Gil, Evelyne;Monier, Guillaume;Castelluci, Dominique;Trassoudaine, Agnes;
12:1:15:2 Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability
DOI:10.1088/0957-4484/23/40/405601 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Lekhal, K.;Avit, G.;Andre, Y.;Trassoudaine, A.;Gil, E.;Varenne, C.;Bougerol, C.;Monier, G.;Castelluci, D.;
12:1:15:3 Collector Phase Transitions during Vapor-Solid-Solid Nucleation of GaN Nanowires
DOI:10.1021/nl101465b JN:NANO LETTERS PY:2010
TC:23 AU: Cheze, Caroline;Geelhaar, Lutz;Trampert, Achim;Brandt, Oliver;Riechert, Henning;
12:1:15:4 Investigations on the role of Ni-catalyst for the VLS growth of quasi-aligned GaN nanowires by chemical vapor deposition
DOI:10.1007/s11051-013-1789-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Purushothaman, V.;Jeganathan, K.;
12:1:15:5 Direct observation of nucleation and early stages of growth of GaN nanowires
DOI:10.1016/j.jcrysgro.2011.09.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Diaz, Rosa E.;Sharma, Renu;Jarvis, Karalee;Zhang, Qinglei;Mahajan, Subhash;
12:1:15:6 Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.03.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Lee, Sanghwa;Oh, Taegeon;Shin, Boa;Kim, Chinkyo;Lee, Dong Ryeol;Lee, Hyun-Hwi;
12:1:15:7 Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires
DOI:10.1016/j.jcrysgro.2011.06.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Lari, L.;Walther, T.;Gass, M. H.;Geelhaar, L.;Cheze, C.;Riechert, H.;Bullough, T. J.;Chalker, P. R.;
12:1:16:1 Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme
DOI:10.1116/1.4739424 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:5 AU: Paramanik, Dipak;Motayed, Abhishek;Aluri, Geetha S.;Ha, Jong-Yoon;Krylyuk, Sergiy;Davydov, Albert V.;King, Matthew;McLaughlin, Sean;Gupta, Shalini;Cramer, Harlan;
12:1:16:2 Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth
DOI:10.1063/1.4769376 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Krylyuk, Sergiy;Paramanik, Dipak;King, Matt;Motayed, Abhishek;Ha, Jong-Yoon;Bonevich, John E.;Talin, Alec;Davydov, Albert V.;
12:1:16:3 Faceting control in core-shell GaN micropillars using selective epitaxy
DOI:10.1063/1.4899296 JN:APL MATERIALS PY:2014
TC:0 AU: Krylyuk, Sergiy;Debnath, Ratan;Yoon, Heayoung P.;King, Matthew R.;Ha, Jong-Yoon;Wen, Baomei;Motayed, Abhishek;Davydov, Albert V.;
12:1:16:4 Top-down fabrication of large-area GaN micro- and nanopillars
DOI:10.1116/1.4865908 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Debnath, Ratan;Ha, Jong-Yoon;Wen, Baomei;Paramanik, Dipak;Motayed, Abhishek;King, Matthew R.;Davydov, Albert V.;
12:1:16:5 Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires
DOI:10.1088/0957-4484/22/46/465703 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Sanders, Aric;Blanchard, Paul;Bertness, Kris;Brubaker, Matthew;Dodson, Christopher;Harvey, Todd;Herrero, Andrew;Rourke, Devin;Schlager, John;Sanford, Norman;Chiaramonti, Ann N.;Davydov, Albert;Motayed, Abhishek;Tsvetkov, Denis;
12:1:17:1 Elastic strain relaxation in GaN/AlN nanowire superlattice
DOI:10.1103/PhysRevB.81.153306 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Landre, O.;Camacho, D.;Bougerol, C.;Niquet, Y. M.;Favre-Nicolin, V.;Renaud, G.;Renevier, H.;Daudin, B.;
12:1:17:2 X-ray diffraction profiles from axial nanowire heterostructures
DOI:10.1103/PhysRevB.83.245321 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Kaganer, V. M.;Woelz, M.;Brandt, O.;Geelhaar, L.;Riechert, H.;
12:1:17:3 Strain and x-ray diffraction from axial nanowire heterostructures
DOI:10.1103/PhysRevB.85.125402 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Kaganer, V. M.;Belov, A. Yu.;
12:1:17:4 Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy
DOI:10.1021/nl401306q JN:NANO LETTERS PY:2013
TC:5 AU: Woelz, Martin;Ramsteiner, Manfred;Kaganer, Vladimir M.;Brandt, Oliver;Geelhaar, Lutz;Riechert, Henning;
12:1:17:5 Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction (vol 98, 261907, 2011)
DOI:10.1063/1.4705374 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Woelz, M.;Kaganer, V. M.;Brandt, O.;Geelhaar, L.;Riechert, H.;
12:1:18:1 Strain evolution in GaN nanowires: From free-surface objects to coalesced templates
DOI:10.1063/1.4818962 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Hugues, M.;Shields, P. A.;Sacconi, F.;Mexis, M.;Maur, M. Auf Der;Cooke, M.;Dineen, M.;Di Carlo, A.;Allsopp, D. W. E.;Zuniga-Perez, J.;
12:1:18:2 Strain relaxation in GaN nanopillars
DOI:10.1063/1.4772481 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Tseng, W. J.;Gonzalez, M.;Dillemans, L.;Cheng, K.;Jiang, S. J.;Vereecken, P. M.;Borghs, G.;Lieten, R. R.;
12:1:18:3 Stress distribution in GaN nanopillars using confocal Raman mapping technique
DOI:10.1063/1.4872056 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nagarajan, S.;Svensk, O.;Lehtola, L.;Lipsanen, H.;Sopanen, M.;
12:1:18:4 Raman and photoluminescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar array
DOI:10.1063/1.3658866 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Wang, X. H.;Ning, J. Q.;Xu, S. J.;Choi, H. W.;
12:1:19:1 Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
DOI:10.1088/0957-4484/22/9/095603 JN:NANOTECHNOLOGY PY:2011
TC:28 AU: Schumann, T.;Gotschke, T.;Limbach, F.;Stoica, T.;Calarco, R.;
12:1:19:2 Microstructure of porous gallium nitride nanowall networks
DOI:10.1016/j.actamat.2013.11.041 JN:ACTA MATERIALIA PY:2014
TC:5 AU: Poppitz, David;Lotnyk, Andriy;Gerlach, Juergen W.;Rauschenbach, Bernd;
12:1:19:3 Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2015.03.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Reveret, F.;Andre, Y.;Gourmala, O.;Leymarie, J.;Mihailovic, M.;Lagarde, D.;Gil, E.;Castelluci, D.;Trassoudaine, A.;
12:1:19:4 Demonstration of crystal-vapor equilibrium leading to growth blockade of GaN during selective area growth
DOI:10.1016/j.jcrysgro.2012.05.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Andre, Y.;Trassoudaine, A.;Gil, E.;Lekhal, K.;Chelda-Gourmala, O.;Castelluci, D.;Cadoret, R.;
12:1:20:1 Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical Properties
DOI:10.1021/nl301690e JN:NANO LETTERS PY:2012
TC:23 AU: Qian, Fang;Brewster, Megan;Lim, Sung K.;Ling, Yichuan;Greene, Christopher;Laboutin, Oleg;Johnson, Jerry W.;Gradecak, Silvija;Cao, Yu;Li, Yat;
12:1:20:2 Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors
DOI:10.1063/1.4752160 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Jones, Eric J.;Azize, Mohamed;Smith, Matthew J.;Palacios, Tomas;Gradecak, Silvija;
12:1:20:3 Towards rapid nanoscale measurement of strain in III-nitride heterostructures
DOI:10.1063/1.4838617 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Jones, Eric;Cooper, David;Rouviere, Jean-Luc;Beche, Armand;Azize, Mohamed;Palacios, Tomas;Gradecak, Silvija;
12:1:21:1 Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)
DOI:10.1063/1.3646391 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Kesaria, Manoj;Shivaprasad, S. M.;
12:1:21:2 GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.07.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Lin, Yong;Leung, Benjamin;Li, Qiming;Figiel, Jeffrey. J.;Wang, George T.;
12:1:21:3 Spontaneous formation of GaN nanostructures by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.01.095 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Kesaria, Manoj;Shetty, Satish;Shivaprasad, S. M.;
12:1:21:4 GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth
DOI:10.1016/j.jcrysgro.2010.10.160 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Vezian, S.;Alloing, B.;Zuniga-Perez, J.;
12:2:1 Light Trapping in Silicon Nanowire Solar Cells
DOI:10.1021/nl100161z JN:NANO LETTERS PY:2010
TC:836 AU: Garnett, Erik;Yang, Peidong;
12:2:2 Nanodome Solar Cells with Efficient Light Management and Self-Cleaning
DOI:10.1021/nl9034237 JN:NANO LETTERS PY:2010
TC:389 AU: Zhu, Jia;Hsu, Ching-Mei;Yu, Zongfu;Fan, Shanhui;Cui, Yi;
12:2:3 Silicon Nanowires for Photovoltaic Solar Energy Conversion
DOI:10.1002/adma.201002410 JN:ADVANCED MATERIALS PY:2011
TC:237 AU: Peng, Kui-Qing;Lee, Shuit-Tong;
12:2:4 Silicon nanowires for photovoltaic applications: The progress and challenge
DOI:10.1016/j.nanoen.2012.07.023 JN:NANO ENERGY PY:2012
TC:35 AU: Song, Tao;Lee, Shuit-Tong;Sun, Baoquan;
12:2:5 Ordered Arrays of Dual-Diameter Nanopillars for Maximized Optical Absorption
DOI:10.1021/nl1010788 JN:NANO LETTERS PY:2010
TC:137 AU: Fan, Zhiyong;Kapadia, Rehan;Leu, Paul W.;Zhang, Xiaobo;Chueh, Yu-Lun;Takei, Kuniharu;Yu, Kyoungsik;Jamshidi, Arash;Rathore, Asghar A.;Ruebusch, Daniel J.;Wu, Ming;Javey, Ali;
12:2:6 Photon management in nanostructured solar cells
DOI:10.1039/c3tc32067g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:13 AU: Wang, Hsin-Ping;Lien, Der-Hsien;Tsai, Meng-Lin;Lin, Chin-An;Chang, Hung-Chih;Lai, Kun-Yu;He, Jr-Hau;
12:2:7 Dramatic Reduction of Surface Recombination by in Situ Surface Passivation of Silicon Nanowires
DOI:10.1021/nl201179n JN:NANO LETTERS PY:2011
TC:92 AU: Dan, Yaping;Seo, Kwanyong;Takei, Kuniharu;Meza, Jhim H.;Javey, Ali;Crozier, Kenneth B.;
12:2:8 High-Performance Silicon Nanohole Solar Cells
DOI:10.1021/ja910082y JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:134 AU: Peng, Kui-Qing;Wang, Xin;Li, Li;Wu, Xiao-Ling;Lee, Shuit-Tong;
12:2:9 Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings
DOI:10.1021/nl204550q JN:NANO LETTERS PY:2012
TC:139 AU: Wang, Ken Xingze;Yu, Zongfu;Liu, Victor;Cui, Yi;Fan, Shanhui;
12:2:10 Optical Absorption Enhancement in Silicon Nanohole Arrays for Solar Photovoltaics
DOI:10.1021/nl904187m JN:NANO LETTERS PY:2010
TC:174 AU: Han, Sang Eon;Chen, Gang;
12:2:11 Light Absorption Enhancement in Thin-Film Solar Cells Using Whispering Gallery Modes in Dielectric Nanospheres
DOI:10.1002/adma.201004393 JN:ADVANCED MATERIALS PY:2011
TC:128 AU: Grandidier, Jonathan;Callahan, Dennis M.;Munday, Jeremy N.;Atwater, Harry A.;
12:2:12 Toward the Lambertian Limit of Light Trapping in Thin Nanostructured Silicon Solar Cells
DOI:10.1021/nl1029804 JN:NANO LETTERS PY:2010
TC:101 AU: Han, Sang Eon;Chen, Gang;
12:2:13 Radial junction Si micro/nano-wire array photovoltaics: Recent progress from theoretical investigation to experimental realization
DOI:10.1016/j.nanoen.2014.04.015 JN:NANO ENERGY PY:2014
TC:3 AU: Li, Yali;Chen, Qiang;He, Deyan;Li, Junshuai;
12:2:14 High-Efficiency Ordered Silicon Nano-Conical-Frustum Array Solar Cells by Self-Powered Parallel Electron Lithography
DOI:10.1021/nl102867a JN:NANO LETTERS PY:2010
TC:101 AU: Lu, Yuerui;Lal, Amit;
12:2:15 Light management for photovoltaics using high-index nanostructures
DOI:10.1038/NMAT3921 JN:NATURE MATERIALS PY:2014
TC:56 AU: Brongersma, Mark L.;Cui, Yi;Fan, Shanhui;
12:2:16 Nanomaterials and nanostructures for efficient light absorption and photovoltaics
DOI:10.1016/j.nanoen.2011.10.002 JN:NANO ENERGY PY:2012
TC:58 AU: Yu, Rui;Lin, Qingfeng;Leung, Siu-Fung;Fan, Zhiyong;
12:2:17 Efficient Photon Capturing with Ordered Three-Dimensional Nanowell Arrays
DOI:10.1021/nl3014567 JN:NANO LETTERS PY:2012
TC:51 AU: Leung, Siu-Fung;Yu, Miao;Lin, Qingfeng;Kwon, Kyungmook;Ching, Kwong-Lung;Gu, Leilei;Yu, Kyoungsik;Fan, Zhiyong;
12:2:18 Hybrid Si Microwire and Planar Solar Cells: Passivation and Characterization
DOI:10.1021/nl2009636 JN:NANO LETTERS PY:2011
TC:73 AU: Kim, Dong Rip;Lee, Chi Hwan;Rao, Pratap Mahesh;Cho, In Sun;Zheng, Xiaolin;
12:2:19 Efficient Light Absorption with Integrated Nanopillar/Nanowell Arrays for Three-Dimensional Thin-Film Photovoltaic Applications
DOI:10.1021/nn400160n JN:ACS NANO PY:2013
TC:41 AU: Lin, Qingfeng;Hua, Bo;Leung, Siu-fung;Duan, Xicheng;Fan, Zhiyong;
12:2:20 Giant Efficiency Enhancement of GaAs Solar Cells with Graded Antireflection Layers Based on Syringelike ZnO Nanorod Arrays
DOI:10.1002/aenm.201100025 JN:ADVANCED ENERGY MATERIALS PY:2011
TC:48 AU: Yeh, Li-Ko;Lai, Kun-Yu;Lin, Guan-Jhong;Fu, Po-Han;Chang, Hung-Chih;Lin, Chin-An;He, Jr-Hau;
12:2:21 Flexible photovoltaic technologies
DOI:10.1039/c3tc32197e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:12 AU: Lin, Qingfeng;Huang, Hongtao;Jing, Yan;Fu, Huiying;Chang, Paichun;Li, Dongdong;Yao, Yan;Fan, Zhiyong;
12:2:22 Above-11%-Efficiency Organic-Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures
DOI:10.1021/nl401540h JN:NANO LETTERS PY:2013
TC:39 AU: Wei, Wan-Rou;Tsai, Meng-Lin;Ho, Shu-Te;Tai, Shih-Hsiang;Ho, Cherng-Rong;Tsai, Shin-Hung;Liu, Chee-Wee;Chung, Ren-Jei;He, Jr-Hau;
12:2:23 Realizing High-Efficiency Omnidirectional n-Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions
DOI:10.1021/nn404015y JN:ACS NANO PY:2013
TC:30 AU: Wang, Hsin-Ping;Lin, Tzu-Yin;Hsu, Chia-Wei;Tsai, Meng-Lin;Huang, Chih-Hsiung;Wei, Wan-Rou;Huang, Ming-Yi;Chien, Yi-Jiunn;Yang, Po-Chuan;Liu, Chee-Wee;Chou, Li-Jen;He, Jr-Hau;
12:2:24 Ultrathin, Flexible Organic-Inorganic Hybrid Solar Cells Based on Silicon Nanowires and PEDOT:PSS
DOI:10.1021/am500063w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:17 AU: Sharma, Manisha;Pudasaini, Pushpa Raj;Ruiz-Zepeda, Francisco;Elam, David;Ayon, Arturo A.;
12:2:25 Solar Cell Light Trapping beyond the Ray Optic Limit
DOI:10.1021/nl203351k JN:NANO LETTERS PY:2012
TC:90 AU: Callahan, Dennis M.;Munday, Jeremy N.;Atwater, Harry A.;
12:2:26 Ultra-High-Responsivity Broadband Detection of Si Metal-Semiconductor-Metal Schottky Photodetectors Improved by ZnO Nanorod Arrays
DOI:10.1021/nn203357e JN:ACS NANO PY:2011
TC:46 AU: Tsai, Dung-Sheng;Lin, Chin-An;Lien, Wei-Cheng;Chang, Hung-Chih;Wang, Yuh-Lin;He, Jr-Hau;
12:2:27 Nanopillar photovoltaics: Materials, processes, and devices
DOI:10.1016/j.nanoen.2011.11.002 JN:NANO ENERGY PY:2012
TC:40 AU: Kapadia, Rehan;Fan, Zhiyong;Takei, Kuniharu;Javey, Ali;
12:2:28 Coherent light trapping in thin-film photovoltaics
DOI:10.1557/mrs.2011.113 JN:MRS BULLETIN PY:2011
TC:46 AU: Mallick, Shrestha Basu;Sergeant, Nicholas P.;Agrawal, Mukul;Lee, Jung-Yong;Peumans, Peter;
12:2:29 Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications
DOI:10.1021/nl2045777 JN:NANO LETTERS PY:2012
TC:64 AU: Mavrokefalos, Anastassios;Han, Sang Eon;Yerci, Selcuk;Branham, Matthew S.;Chen, Gang;
12:2:30 Strong Geometrical Dependence of the Absorption of Light in Arrays of Semiconductor Nanowires
DOI:10.1021/nn103596n JN:ACS NANO PY:2011
TC:59 AU: Diedenhofen, Silke L.;Janssen, Olaf T. A.;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;
12:2:31 Nanoscale photon management in silicon solar cells
DOI:10.1116/1.4759260 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:11 AU: Jeong, Sangmoo;Wang, Shuang;Cui, Yi;
12:2:32 Strong Light Absorption of Self-Organized 3-D Nanospike Arrays for Photovoltaic Applications
DOI:10.1021/nn203844z JN:ACS NANO PY:2011
TC:28 AU: Yu, Rui;Ching, Kwong-Lung;Lin, Qingfeng;Leung, Siu-Fung;Arcrossito, Diaz;Fan, Zhiyong;
12:2:33 Inverted Nanocone-Based Thin Film Photovoltaics with Omnidirectionally Enhanced Performance
DOI:10.1021/nn5023878 JN:ACS NANO PY:2014
TC:12 AU: Lin, Qingfeng;Leung, Siu-Fung;Lu, Linfeng;Chen, Xiaoyuan;Chen, Zhuo;Tang, Haoning;Su, Wenjun;Li, Dongdong;Fan, Zhiyong;
12:2:34 Supersensitive, Ultrafast, and Broad-Band Light-Harvesting Scheme Employing Carbon Nanotube/TiO2 Core-Shell Nanowire Geometry
DOI:10.1021/nn3011625 JN:ACS NANO PY:2012
TC:31 AU: Hsu, Chia-Yang;Lien, Der-Hsien;Lu, Sheng-Yi;Chen, Cheng-Ying;Kang, Chen-Fang;Chueh, Yu-Lun;Hsu, Wen-Kuang;He, Jr-Hau;
12:2:35 Non-Reflecting Silicon and Polymer Surfaces by Plasma Etching and Replication
DOI:10.1002/adma.201001810 JN:ADVANCED MATERIALS PY:2011
TC:75 AU: Sainiemi, Lauri;Jokinen, Ville;Shah, Ali;Shpak, Maksim;Aura, Susanna;Suvanto, Pia;Franssila, Sami;
12:2:36 Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths
DOI:10.1063/1.3432449 JN:APPLIED PHYSICS LETTERS PY:2010
TC:58 AU: Yoon, Heayoung P.;Yuwen, Yu A.;Kendrick, Chito E.;Barber, Greg D.;Podraza, Nikolas J.;Redwing, Joan M.;Mallouk, Thomas E.;Wronski, Christopher R.;Mayer, Theresa S.;
12:2:37 Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays
DOI:10.1021/nl903366z JN:NANO LETTERS PY:2010
TC:43 AU: Chueh, Yu-Lun;Fan, Zhiyong;Takei, Kuniharu;Ko, Hyunhyub;Kapadia, Rehan;Rathore, Asghar A.;Miller, Nate;Yu, Kyoungsik;Wu, Ming;Haller, E. E.;Javey, Ali;
12:2:38 Low-Cost, Flexible, and Self-Cleaning 3D Nanocone AntiRefl ection Films for High-Efficiency Photovoltaics
DOI:10.1002/adma.201304938 JN:ADVANCED MATERIALS PY:2014
TC:16 AU: Tsui, Kwong-Hoi;Lin, Qingfeng;Chou, Hungtao;Zhang, Qianpeng;Fu, Huiying;Qi, Pengfei;Fan, Zhiyong;
12:2:39 Design constraints and guidelines for CdS/CdTe nanopillar based photovoltaics
DOI:10.1063/1.3340938 JN:APPLIED PHYSICS LETTERS PY:2010
TC:35 AU: Kapadia, Rehan;Fan, Zhiyong;Javey, Ali;
12:2:40 Rational Design of Inverted Nanopencil Arrays for Cost-Effective, Broadband, and Omnidirectional Light Harvesting
DOI:10.1021/nn500418x JN:ACS NANO PY:2014
TC:8 AU: Lin, Hao;Xiu, Fei;Fang, Ming;Yip, SenPo;Cheung, Ho-Yuen;Wang, Fengyun;Han, Ning;Chan, Kwok Sum;Wong, Chun-Yuen;Ho, Johnny C.;
12:2:41 Radial junction silicon wire array solar cells fabricated by gold-catalyzed vapor-liquid-solid growth
DOI:10.1063/1.3496044 JN:APPLIED PHYSICS LETTERS PY:2010
TC:43 AU: Kendrick, Chito E.;Yoon, Heayong P.;Yuwen, Yu A.;Barber, Greg D.;Shen, Haoting;Mallouk, Thomas E.;Dickey, Elizabeth C.;Mayer, Theresa S.;Redwing, Joan M.;
12:2:42 Optimal design for antireflective Si nanowire solar cells
DOI:10.1016/j.solmat.2012.12.046 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:25 AU: Jung, Jin-Young;Um, Han-Don;Jee, Sang-Won;Park, Kwang-Tae;Bang, Jin Ho;Lee, Jung-Ho;
12:2:43 Significant Efficiency Enhancement of Hybrid Solar Cells Using Core-Shell Nanowire Geometry for Energy Harvesting
DOI:10.1021/nn202485m JN:ACS NANO PY:2011
TC:40 AU: Tsai, Shin-Hung;Chang, Hung-Chih;Wang, Hsin-Hua;Chen, Szu-Ying;Lin, Chin-An;Chen, Show-An;Chueh, Yu-Lun;He, Jr-Hau;
12:2:44 Antireflection effect of ZnO nanorod arrays
DOI:10.1039/c0jm00516a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:53 AU: Chao, Yen-Chun;Chen, Cheng-Ying;Lin, Chin-An;Dai, Yu-An;He, Jr-Hau;
12:2:45 Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method
DOI:10.1021/nl903166t JN:NANO LETTERS PY:2010
TC:37 AU: Demichel, O.;Calvo, V.;Besson, A.;Noe, P.;Salem, B.;Pauc, N.;Oehler, F.;Gentile, P.;Magnea, N.;
12:2:46 Nanoparticle Stacks with Graded Refractive Indices Enhance the Omnidirectional Light Harvesting of Solar Cells and the Light Extraction of Light-Emitting Diodes
DOI:10.1002/adfm.201201949 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:15 AU: Fang, Cheng-Yi;Liu, Yu-Lun;Lee, Yang-Chun;Chen, Hsuen-Li;Wan, De-Hui;Yu, Chen-Chieh;
12:2:47 Influence of nanowires length on performance of crystalline silicon solar cell
DOI:10.1063/1.3574904 JN:APPLIED PHYSICS LETTERS PY:2011
TC:44 AU: Li, Haofeng;Jia, Rui;Chen, Chen;Xing, Zhao;Ding, Wuchang;Meng, Yanlong;Wu, Deqi;Liu, Xinyu;Ye, Tianchun;
12:2:48 Effect of the short collection length in silicon microscale wire solar cells
DOI:10.1063/1.4804581 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Kim, Hyunyub;Kim, Joondong;Lee, Eunsongyi;Kim, Dong-Wook;Yun, Ju-Hyung;Yi, Junsin;
12:2:49 Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications
DOI:10.1063/1.4870236 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Zhou, Di;Pennec, Y.;Djafari-Rouhani, B.;Cristini-Robbe, O.;Xu, T.;Lambert, Y.;Deblock, Y.;Faucher, M.;Stievenard, D.;
12:2:50 Subwavelength Si nanowire arrays for self-cleaning antireflection coatings
DOI:10.1039/c0jm00524j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:40 AU: Dai, Yu-An;Chang, Hung-Chih;Lai, Kun-Yu;Lin, Chin-An;Chung, Ren-Jei;Lin, Gong-Ru;He, Jr-Hau;
12:2:51 Enhanced absorption in silicon nanocone arrays for photovoltaics
DOI:10.1088/0957-4484/23/19/194003 JN:NANOTECHNOLOGY PY:2012
TC:48 AU: Wang, Baomin;Leu, Paul W.;
12:2:52 Toward Efficient and Omnidirectional n-Type Si Solar Cells: Concurrent Improvement in Optical and Electrical Characteristics by Employing Microscale Hierarchical Structures
DOI:10.1021/nn500257g JN:ACS NANO PY:2014
TC:6 AU: Wang, Hsin-Ping;Lin, Tzu-Yin;Tsai, Meng-Lin;Tu, Wei-Chen;Huang, Ming-Yi;Liu, Chee-Wee;Chueh, Yu-Lun;He, Jr-Hau;
12:2:53 Effective light management of three-dimensionally patterned transparent conductive oxide layers
DOI:10.1063/1.4756940 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Kim, Joondong;Kim, Mingeon;Kim, Hyunyub;Song, Kyuwan;Lee, Eunsongyi;Kim, Dong-Wook;Yun, Ju-Hyung;Choi, Byung-Ik;Lee, Sunhwa;Jeong, Chaehwan;Yi, Junsin;
12:2:54 Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties
DOI:10.1063/1.4893704 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Das, Suprem R.;Akatay, Cem;Mohammad, Asaduzzaman;Khan, Mohammad Ryyan;Maeda, Kosuke;Deacon, Russell S.;Ishibashi, Koji;Chen, Yong P.;Sands, Timothy D.;Alam, Muhammad A.;Janes, David B.;
12:2:55 Rational geometrical design of multi-diameter nanopillars for efficient light harvesting
DOI:10.1016/j.nanoen.2013.03.016 JN:NANO ENERGY PY:2013
TC:12 AU: Hua, Bo;Wang, Baomin;Yu, Miao;Leu, Paul W.;Fan, Zhiyong;
12:2:56 A waferscale Si wire solar cell using radial and bulk p-n junctions
DOI:10.1088/0957-4484/21/44/445303 JN:NANOTECHNOLOGY PY:2010
TC:57 AU: Jung, Jin-Young;Guo, Zhongyi;Jee, Sang-Won;Um, Han-Don;Park, Kwang-Tae;Hyun, Moon Seop;Yang, Jun Mo;Lee, Jung-Ho;
12:2:57 Realization of effective light trapping and omnidirectional antireflection in smooth surface silicon nanowire arrays
DOI:10.1088/0957-4484/22/6/065704 JN:NANOTECHNOLOGY PY:2011
TC:35 AU: Xie, W. Q.;Oh, J. I.;Shen, W. Z.;
12:2:58 Solar energy harnessing in hexagonally arranged Si nanowire arrays and effects of array symmetry on optical characteristics
DOI:10.1088/0957-4484/23/19/194010 JN:NANOTECHNOLOGY PY:2012
TC:22 AU: Li, Junshuai;Yu, HongYu;Li, Yali;
12:2:59 Flexible, Polymer-Supported, Si Wire Array Photoelectrodes
DOI:10.1002/adma.201000602 JN:ADVANCED MATERIALS PY:2010
TC:43 AU: Spurgeon, Joshua M.;Boettcher, Shannon W.;Kelzenberg, Michael D.;Brunschwig, Bruce S.;Atwater, Harry A.;Lewis, Nathan S.;
12:2:60 Broadband Optical Antireflection Enhancement by Integrating Antireflective Nanoislands with Silicon Nanoconical-Frustum Arrays
DOI:10.1002/adma.201103399 JN:ADVANCED MATERIALS PY:2011
TC:39 AU: Park, Haesung;Shin, Dongheok;Kang, Gumin;Baek, Seunghwa;Kim, Kyoungsik;Padilla, Willie J.;
12:2:61 Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells
DOI:10.1063/1.3520217 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:31 AU: Wang, X.;Pey, K. L.;Yip, C. H.;Fitzgerald, E. A.;Antoniadis, D. A.;
12:2:62 Periodic Si Nanopillar Arrays Fabricated by Colloidal Lithography and Catalytic Etching for Broadband and Omnidirectional Elimination of Fresnel Reflection
DOI:10.1021/la1012507 JN:LANGMUIR PY:2010
TC:46 AU: Wang, Hsin-Ping;Lai, Kun-Yu;Lin, Yi-Ruei;Lin, Chin-An;He, Jr-Hau;
12:2:63 Heterojunction Silicon Microwire Solar Cells
DOI:10.1021/nl3033813 JN:NANO LETTERS PY:2012
TC:27 AU: Gharghi, Majid;Fathi, Ehsanollah;Kante, Boubacar;Sivoththaman, Siva;Zhang, Xiang;
12:2:64 Broadband Light-Trapping Enhancement in an Ultrathin Film a-Si Absorber Using Whispering Gallery Modes and Guided Wave Modes with Dielectric Surface-Textured Structures
DOI:10.1002/adma.201204596 JN:ADVANCED MATERIALS PY:2013
TC:16 AU: Kang, Gumin;Park, Haesung;Shin, Dongheok;Baek, Seunghwa;Choi, Minjung;Yu, Dai-Hyuk;Kim, Kyoungsik;Padilla, Willie J.;
12:2:65 Low aspect-ratio hemispherical nanopit surface texturing for enhancing light absorption in crystalline Si thin film-based solar cells
DOI:10.1063/1.3537810 JN:APPLIED PHYSICS LETTERS PY:2011
TC:31 AU: Li, Junshuai;Yu, HongYu;Li, Yali;Wang, Fei;Yang, Mingfei;Wong, She Mein;
12:2:66 Broadband enhancement of optical absorption in a silicon nanowire flexible thin film
DOI:10.1016/j.tsf.2014.09.018 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Jung, Jin-Young;Zhou, Keya;Lee, Jung-Ho;
12:2:67 Nanodome-patterned transparent conductor for highly responsive photoelectric device
DOI:10.1063/1.4824688 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Hong, Seung-Hyouk;Yun, Ju-Hyung;Park, Hyeong-Ho;Kim, Joondong;
12:2:68 Developing controllable anisotropic wet etching to achieve silicon nanorods, nanopencils and nanocones for efficient photon trapping
DOI:10.1039/c3ta11889d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:10 AU: Lin, Hao;Cheung, Ho-Yuen;Xiu, Fei;Wang, Fengyun;Yip, Senpo;Han, Ning;Hung, Takfu;Zhou, Jun;Ho, Johnny C.;Wong, Chun-Yuen;
12:2:69 Water-repellent perovskite solar cell
DOI:10.1039/c4ta05413j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Kang, Seong Min;Ahn, Namyoung;Lee, Jin-Wook;Choi, Mansoo;Park, Nam-Gyu;
12:2:70 Fast and Scalable Printing of Large Area Monolayer Nanoparticles for Nanotexturing Applications
DOI:10.1021/nl101432r JN:NANO LETTERS PY:2010
TC:42 AU: Jeong, Sangmoo;Hu, Liangbing;Lee, Hye Ryoung;Garnett, Erik;Choi, Jang Wook;Cui, Yi;
12:2:71 A simple and low-cost technique for silicon nanowire arrays based solar cells
DOI:10.1016/j.solmat.2011.11.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:36 AU: Huang, Bohr-Ran;Yang, Ying-Kan;Lin, Tzu-Ching;Yang, Wen-Luh;
12:2:72 Novel Silicon Nanohemisphere-Array Solar Cells with Enhanced Performance
DOI:10.1002/smll.201100950 JN:SMALL PY:2011
TC:22 AU: Li, Yali;Yu, HongYu;Li, Junshuai;Wong, She-Mein;Sun, Xiao Wei;Li, Xianglin;Cheng, Chuanwei;Fan, Hong Jin;Wang, Jian;Singh, Navab;Lo, Patrick Guo-Qiang;Kwong, Dim-Lee;
12:2:73 Minimizing reflection losses from metallic electrodes and enhancing photovoltaic performance using the Si-micrograting solar cell with vertical sidewall electrodes
DOI:10.1063/1.4749838 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Yang, Tien-Chung;Lee, Bi-Shen;Yen, Ta-Jen;
12:2:74 Polymer-Confined Colloidal Monolayer: A Reusable Soft Photomask for Rapid Wafer-Scale Nanopatterning
DOI:10.1021/am505221g JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Fang, Ming;Lin, Hao;Cheung, Ho-Yuen;Xiu, Fei;Shen, Lifan;Yip, SenPo;Pun, Edwin Yue-Bun;Wong, Chun-Yuen;Ho, Johnny C.;
12:2:75 Shape-Controlled Synthesis of Single-Crystalline Nanopillar Arrays by Template-Assisted Vapor-Liquid-Solid Process
DOI:10.1021/ja1052413 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:18 AU: Ergen, Onur;Ruebusch, Daniel J.;Fang, Hui;Rathore, Asghar A.;Kapadia, Rehan;Fan, Zhiyong;Takei, Kuniharu;Jamshidi, Arash;Wu, Ming;Javey, Ali;
12:2:76 High-Efficiency Nanostructured Window GaAs Solar Cells
DOI:10.1021/nl402680g JN:NANO LETTERS PY:2013
TC:25 AU: Liang, Dong;Kang, Yangsen;Huo, Yijie;Chen, Yusi;Cui, Yi;Harris, James S.;
12:2:77 Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials
DOI:10.1021/nl402230v JN:NANO LETTERS PY:2013
TC:29 AU: Wang, Shuang;Weil, Benjamin D.;Li, Yanbin;Wang, Ken Xingze;Garnett, Erik;Fan, Shanhui;Cui, Yi;
12:2:78 Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays
DOI:10.1002/aenm.201200022 JN:ADVANCED ENERGY MATERIALS PY:2012
TC:17 AU: Liang, Dong;Huo, Yijie;Kang, Yangsen;Wang, Ken Xingze;Gu, Anjia;Tan, Meiyueh;Yu, Zongfu;Li, Shuang;Jia, Jieyang;Bao, Xinyu;Wang, Shuang;Yao, Yan;Wong, H. -S. Philip;Fan, Shanhui;Cui, Yi;Harris, James S.;
12:2:79 Ultralow Reflection from a-Si Nanograss/Si Nanofrustum Double Layers
DOI:10.1002/adma.201204235 JN:ADVANCED MATERIALS PY:2013
TC:8 AU: Ravipati, Srikanth;Shieh, Jiann;Ko, Fu-Hsiang;Yu, Chen-Chieh;Chen, Hsuen-Li;
12:2:80 Transparent conductor-Si pillars heterojunction photodetector
DOI:10.1063/1.4892489 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Yun, Ju-Hyung;Kim, Joondong;Park, Yun Chang;
12:2:81 Decreasing reflection through the mutually positive effects of nanograss and nanopillars
DOI:10.1039/c4tc00043a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Lin, C. H.;Shieh, J.;Liang, C. C.;Cheng, C. C.;Chen, Y. C.;
12:2:82 Nanowire Arrays in Multicrystalline Silicon Thin Films on Glass: A Promising Material for Research and Applications in Nanotechnology
DOI:10.1021/nl301419q JN:NANO LETTERS PY:2012
TC:29 AU: Schmitt, Sebastian W.;Schechtel, Florian;Amkreutz, Daniel;Bashouti, Muhammad;Srivastava, Sanjay K.;Hoffmann, Bjoern;Dieker, Christel;Spiecker, Erdmann;Rech, Bernd;Christiansen, Silke H.;
12:2:83 Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
DOI:10.1021/nl203857h JN:NANO LETTERS PY:2012
TC:15 AU: Yan, Chenglin;Li, Xiaopeng;Zhou, Keya;Pan, Anlian;Werner, Peter;Mensah, Samuel L.;Vogel, Alexander T.;Schmidt, Volker;
12:2:84 Low-Temperature Self-Catalytic Growth of Tin Oxide Nanocones over Large Areas
DOI:10.1021/nn2015216 JN:ACS NANO PY:2011
TC:23 AU: Jeong, Sangmoo;McDowell, Matthew T.;Cui, Yi;
12:2:85 Si Microwire Solar Cells: Improved Efficiency with a Conformal SiO2 Layer
DOI:10.1021/nn401776x JN:ACS NANO PY:2013
TC:15 AU: Seo, Kwanyong;Yu, Young J.;Duane, Peter;Zhu, Wenqi;Park, Hyunsung;Wober, Munib;Crozier, Kenneth B.;
12:2:86 Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars
DOI:10.1063/1.3621877 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Jee, Sang-Won;Park, Seong-Je;Kim, Joondong;Park, Yun Chang;Choi, Jun-Hyuk;Jeong, Jun-Ho;Lee, Jung-Ho;
12:2:87 Broadband optical absorption enhancement in silicon nanofunnel arrays for photovoltaic applications
DOI:10.1063/1.4723850 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Li, Li;Peng, Kui-Qing;Hu, Bo;Wang, Xin;Hu, Ya;Wu, Xiao-Ling;Lee, Shuit-Tong;
12:2:88 Efficient light trapping in low aspect-ratio honeycomb nanobowl surface texturing for crystalline silicon solar cell applications
DOI:10.1063/1.4851236 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Gao, Pingqi;Wang, Hongzhe;Sun, Zixu;Han, Weiqiang;Li, Junshuai;Ye, Jichun;
12:2:89 Epitaxial growth of radial Si p-i-n junctions for photovoltaic applications
DOI:10.1063/1.4794541 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Yoo, Jinkyoung;Dayeh, Shadi A.;Tang, Wei;Picraux, S. T.;
12:2:90 Optimal design of nano-scale surface light trapping structures for enhancing light absorption in thin film photovoltaics
DOI:10.1063/1.4813096 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Yeo, Chan Il;Song, Young Min;Jang, Sung Jun;Lee, Yong Tak;
12:2:91 Large Scale Single-Crystal Cu(In,Ga)Se-2 Nanotip Arrays For High Efficiency Solar Cell
DOI:10.1021/nl202673k JN:NANO LETTERS PY:2011
TC:25 AU: Liu, Chin-Hung;Chen, Chia-Hsiang;Chen, Szu-Ying;Yen, Yu-Ting;Kuo, Wei-Chen;Liao, Yu-Kuang;Juang, Jenh-Yih;Kuo, Hao-Chung;Lai, Chih-Huang;Chen, Lih-Juann;Chueh, Yu-Lun;
12:2:92 Roll-to-Roll Anodization and Etching of Aluminum Foils for High-Throughput Surface Nanotexturing
DOI:10.1021/nl201862d JN:NANO LETTERS PY:2011
TC:21 AU: Lee, Min Hyung;Lim, Namsoo;Ruebusch, Daniel J.;Jamshidi, Arash;Kapadia, Rehan;Lee, Rebecca;Seok, Tae Joon;Takei, Kuniharu;Cho, Kee Young;Fan, Zhiyoung;Jang, Hwanung;Wu, Ming;Cho, Gyoujin;Javey, Ali;
12:2:93 Core-shell heterojunction solar cells on silicon nanowire arrays
DOI:10.1016/j.solmat.2011.09.062 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:44 AU: Jia, Guobin;Steglich, Martin;Sill, Ingo;Falk, Fritz;
12:2:94 Nanophotonic light-trapping theory for solar cells
DOI:10.1007/s00339-011-6617-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:24 AU: Yu, Zongfu;Raman, Aaswath;Fan, Shanhui;
12:2:95 Comparison of optical absorption in Si nanowire and nanoporous Si structures for photovoltaic applications
DOI:10.1063/1.3427407 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: Xiong, Zhiqiang;Zhao, Fangyuan;Yang, Jiong;Hu, Xinhua;
12:2:96 Morphology Defects Guided Pore Initiation during the Formation of Porous Anodic Alumina
DOI:10.1021/am405294x JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:11 AU: Yang, Jie;Huang, Hongtao;Lin, Qingfeng;Lu, Linfeng;Chen, Xiaoyuan;Yang, Liyou;Zhu, Xufei;Fan, Zhiyong;Song, Ye;Li, Dongdong;
12:2:97 Influence of the pattern shape on the efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells
DOI:10.1063/1.4768529 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Herman, Aline;Trompoukis, Christos;Depauw, Valerie;El Daif, Ounsi;Deparis, Olivier;
12:2:98 Stable ZnO@TiO2 core/shell nanorod arrays with exposed high energy facets for self-cleaning coatings with anti-reflective properties
DOI:10.1039/c4ta00455h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:7 AU: Wang, Ruosong;Tan, Huaqiao;Zhao, Zhao;Zhang, Guoqiang;Song, Laiwen;Dong, Wenfei;Sun, Zaicheng;
12:2:99 Double transparent conducting oxide films for photoelectric devices
DOI:10.1016/j.matlet.2011.11.053 JN:MATERIALS LETTERS PY:2012
TC:17 AU: Yun, Ju-Hyung;Kim, Joondong;
12:2:100 Enhanced light extraction of light-emitting diodes via nano-honeycomb photonic crystals
DOI:10.1016/j.nanoen.2014.05.006 JN:NANO ENERGY PY:2014
TC:4 AU: Fu, Po-Han;Lin, Guan-Jhong;Wang, Hsin-Ping;Lai, Kun-Yu;He, Jr-Hau;
12:2:101 A broadband and omnidirectional light-harvesting scheme employing nanospheres on Si solar cells
DOI:10.1016/j.nanoen.2014.03.004 JN:NANO ENERGY PY:2014
TC:3 AU: Lin, Guan-Jhong;Wang, Hsin-Ping;Lien, Der-Hsien;Fu, Po-Han;Chang, Hung-Chih;Ho, Cheng-Han;Lin, Chin-An;Lai, Kun-Yu;He, Jr-Hau;
12:2:102 Efficiency improvement of silicon nanostructure-based solar cells
DOI:10.1088/0957-4484/25/3/035401 JN:NANOTECHNOLOGY PY:2014
TC:5 AU: Huang, Bohr-Ran;Yang, Ying-Kan;Yang, Wen-Luh;
12:2:103 Large-Area Nanosphere Self-Assembly by a Micro-Propulsive Injection Method for High Throughput Periodic Surface Nanotexturing
DOI:10.1021/acs.nanolett.5b01202 JN:NANO LETTERS PY:2015
TC:1 AU: Gao, Pingqi;He, Jian;Zhou, Suqiong;Yang, Xi;Li, Sizhong;Sheng, Jiang;Wang, Dan;Yu, Tianbao;Ye, Jichun;Cui, Yi;
12:2:104 Enhancement of GaAs solar cell performance by using a ZnO sol-gel anti-reflection coating
DOI:10.1016/j.solmat.2014.01.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Makableh, Y. F.;Vasan, R.;Sarker, J. C.;Nusir, A. I.;Seal, S.;Manasreh, M. O.;
12:2:105 Nickel Silicide Nanowire Arrays for Anti-Reflective Electrodes in Photovoltaics
DOI:10.1002/adfm.201200398 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:11 AU: Dasgupta, Neil P.;Xu, Shicheng;Jung, Hee Joon;Iancu, Andrei;Fasching, Rainer;Sinclair, Robert;Prinz, Fritz B.;
12:2:106 Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters
DOI:10.1063/1.3485294 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Guzelturk, Burak;Mutlugun, Evren;Wang, Xiaodong;Pey, Kin Leong;Demir, Hilmi Volkan;
12:2:107 Three-dimensional nanojunction device models for photovoltaics
DOI:10.1063/1.3595411 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Wangperawong, Artit;Bent, Stacey F.;
12:2:108 Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics
DOI:10.1063/1.3585138 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Cho, Kee;Ruebusch, Daniel J.;Lee, Min Hyung;Moon, Jae Hyun;Ford, Alexandra C.;Kapadia, Rehan;Takei, Kuniharu;Ergen, Onur;Javey, Ali;
12:2:109 Angular constraint on light-trapping absorption enhancement in solar cells
DOI:10.1063/1.3532099 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Yu, Zongfu;Fan, Shanhui;
12:2:110 Optical absorption and photoelectrochemical performance enhancement in Si tube array for solar energy harvesting application
DOI:10.1063/1.4802997 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Zhang, Ying;Wang, Hui;Liu, Zhen;Zou, Bin;Duan, Chunyang;Yang, Tian;Zhang, Xiujuan;Zheng, Caijun;Zhang, Xiaohong;
12:2:111 Absorption enhancement analysis of crystalline Si thin film solar cells based on broadband antireflection nanocone grating
DOI:10.1063/1.3662915 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Zhang, R. Y.;Shao, B.;Dong, J. R.;Zhang, J. C.;Yang, H.;
12:2:112 Comparison of periodic light-trapping structures in thin crystalline silicon solar cells
DOI:10.1063/1.3611425 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:33 AU: Gjessing, Jo;Sudbo, Aasmund S.;Marstein, Erik S.;
12:2:113 Comparing nanowire, multijunction, and single junction solar cells in the presence of light trapping
DOI:10.1063/1.3579420 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Catchpole, K. R.;Mokkapati, S.;Beck, F. J.;
12:2:114 Design guideline of high efficiency crystalline Si thin film solar cell with nanohole array textured surface
DOI:10.1063/1.3573596 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:30 AU: Wang, Fei;Yu, Hongyu;Li, Junshuai;Wong, Shemein;Sun, Xiao Wei;Wang, Xincai;Zheng, Hongyu;
12:2:115 Discrete-contact nanowire photovoltaics
DOI:10.1063/1.4826361 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Chitambar, Michelle J.;Wen, Wen;Maldonado, Stephen;
12:2:116 Antireflection Characteristics of Nanorod Arrays and Nanohole Arrays Based on Si Substrate
DOI:10.1166/jctn.2013.3216 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:1 AU: Wang, Junfeng;Dong, Peitao;Di, Di;Chen, Jian;Wang, Chaoguang;Wang, Haoxu;Wu, Xuezhong;
12:2:117 Multifunctional Inverted Nanocone Arrays for Non-Wetting, Self-Cleaning Transparent Surface with High Mechanical Robustness
DOI:10.1002/smll.201303051 JN:SMALL PY:2014
TC:9 AU: Kim, Jeong-Gil;Choi, Hyungryul J.;Park, Kyoo-Chul;Cohen, Robert E.;McKinley, Gareth H.;Barbastathis, George;
12:2:118 Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se-2 Nanotip Array Solar Cells
DOI:10.1021/nn402976b JN:ACS NANO PY:2013
TC:7 AU: Liao, Yu-Kuang;Wang, Yi-Chung;Yen, Yu-Ting;Chen, Chia-Hsiang;Hsieh, Dan-Hua;Chen, Shih-Chen;Lee, Chia-Yu;Lai, Chih-Chung;Kuo, Wei-Chen;Juang, Jenh-Yi;Wu, Kaung-Hsiung;Cheng, Shun-Jen;Lai, Chih-Huang;Lai, Fang-I;Kuo, Shou-Yi;Kuo, Hao-Chung;Chueh, Yu-Lun;
12:2:119 Photoelectrochemical Behavior of Planar and Microwire-Array Si|GaP Electrodes
DOI:10.1002/aenm.201100728 JN:ADVANCED ENERGY MATERIALS PY:2012
TC:14 AU: Strandwitz, Nicholas C.;Turner-Evans, Daniel B.;Tamboli, Adele C.;Chen, Christopher T.;Atwater, Harry A.;Lewis, Nathan S.;
12:2:120 Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p-n Junction Silicon Nanowires
DOI:10.1002/adma.201101429 JN:ADVANCED MATERIALS PY:2011
TC:15 AU: Jung, Yeonwoong;Vacic, Aleksandar;Perea, Daniel E.;Picraux, Samuel T.;Reed, Mark A.;
12:2:121 Electrode-contact enhancement in silicon nanowire-array-textured solar cells
DOI:10.1063/1.3576924 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Chen, Chen;Jia, Rui;Li, Haofeng;Meng, Yanlong;Liu, Xinyu;Ye, Tianchun;Kasai, Seiya;Tamotsu, Hashizume;Wu, Nanjian;Wang, Shanli;Chu, Junhao;
12:2:122 Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes
DOI:10.1063/1.4824848 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Ho, Cheng-Han;Hsiao, Yu-Hsuan;Lien, Der-Hsien;Tsai, M. S.;Chang, Don;Lai, Kun-Yu;Sun, Ching-Cherng;He, Jr-Hau;
12:2:123 Toward high efficiency of inverted organic solar cells: Concurrent improvement in optical and electrical properties of electron transport layers
DOI:10.1063/1.4812981 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Tsai, S. H.;Ho, S. T.;Jhuo, H. J.;Ho, C. R.;Chen, S. A.;He, Jr-Hau;
12:2:124 Adhesive modification of indium-tin-oxide surface for template attachment for deposition of highly ordered nanostructure arrays
DOI:10.1016/j.apsusc.2012.05.009 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Gu, W.;Liao, L. S.;Cai, S. D.;Zhou, D. Y.;Jin, Z. M.;Shi, X. B.;Lei, Y. L.;
12:2:125 Fabrication and photoelectrochemical properties of ordered Si nanohole arrays
DOI:10.1016/j.apsusc.2013.11.080 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Ji, Jiuyu;Zhang, Heqiu;Qiu, Yu;Wang, Lina;Wang, Yan;Hu, Lizhong;
12:2:126 High Surface Area Transparent Conducting Oxide Electrodes with a Customizable Device Architecture
DOI:10.1021/cm402551m JN:CHEMISTRY OF MATERIALS PY:2014
TC:2 AU: Forman, Arnold J.;Chen, Zhebo;Chakthranont, Pongkarn;Jaramillo, Thomas F.;
12:2:127 The effects of surface modification on the electrical properties of p-n(+) junction silicon nanowires grown by an aqueous electroless etching method
DOI:10.1007/s11051-012-0840-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:2 AU: Lee, Seulah;Koo, Ja Hoon;Seo, Jungmok;Kim, Sung-Dae;Lee, Kwang Hyun;Im, Seongil;Kim, Young-Woon;Lee, Taeyoon;
12:2:128 Thermodynamic Upper Bound on Broadband Light Coupling with Photonic Structures
DOI:10.1103/PhysRevLett.109.173901 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:17 AU: Yu, Zongfu;Raman, Aaswath;Fan, Shanhui;
12:2:129 Comparison of optical properties of Si and ZnO/CdTe core/shell nanowire arrays
DOI:10.1016/j.mseb.2012.10.037 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:7 AU: Michallon, Jerome;Zanuccoli, Mauro;Kaminski-Cachopo, Anne;Consonni, Vincent;Morand, Alain;Bucci, Davide;Emieux, Fabrice;Szambolics, Helga;Perraud, Simon;Semenikhin, Igor;
12:2:130 Radial junctions formed by conformal chemical doping for innovative hole-based solar cells
DOI:10.1016/j.mseb.2012.11.019 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:4 AU: Garozzo, C.;Giannazzo, F.;Italia, M.;La Magna, A.;Privitera, V.;Puglisi, R. A.;
12:2:131 Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires
DOI:10.1088/0957-4484/22/44/445401 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Ke, Y.;Wang, X.;Weng, X. J.;Kendrick, C. E.;Yu, Y. A.;Eichfeld, S. M.;Yoon, H. P.;Redwing, J. M.;Mayer, T. S.;Habib, Y. M.;
12:2:132 High yield transfer of ordered nanowire arrays into transparent flexible polymer films
DOI:10.1088/0957-4484/23/49/495305 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Standing, A. J.;Assali, S.;Haverkort, J. E. M.;Bakkers, E. P. A. M.;
12:2:133 PHOTOVOLTAICS More solar cells for less
DOI:10.1038/nmat2701 JN:NATURE MATERIALS PY:2010
TC:25 AU: Zhu, Jia;Cui, Yi;
12:2:134 Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells
DOI:10.1016/j.solmat.2014.07.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:0 AU: Rabbani, M. Golam;Verma, Amit;Adachi, Michael M.;Sundararajan, Jency P.;Khader, Mahmoud M.;Nekovei, Reza;Anantram, M. P.;
12:2:135 Ultrahigh Throughput Silicon Nanomanufacturing by Simultaneous Reactive Ion Synthesis and Etching
DOI:10.1021/nn2024754 JN:ACS NANO PY:2011
TC:22 AU: Chen, Yi;Xu, Zhida;Gartia, Manas R.;Whitlock, Daren;Lian, Yaguang;Liu, G. Logan;
12:2:136 Thickness Dependence of Plasmonic Charge Carrier Generation in Ultrathin a-Si:H Layers for Solar Cells
DOI:10.1021/nn201074z JN:ACS NANO PY:2011
TC:20 AU: Gusak, Viktoria;Kasemo, Bengt;Hagglund, Carl;
12:2:137 High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism
DOI:10.1063/1.4764942 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Dou, Bingfei;Jia, Rui;Li, Haofeng;Chen, Chen;Ding, Wuchang;Meng, Yanlong;Xing, Zhao;Liu, Xinyu;Ye, Tianchun;
12:2:138 Nanowire array photovoltaics: Radial disorder versus design for optimal efficiency
DOI:10.1063/1.4761957 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Sturmberg, Bjoern C. P.;Dossou, Kokou B.;Botten, Lindsay C.;Asatryan, Ara A.;Poulton, Christopher G.;McPhedran, Ross C.;de Sterke, C. Martijn;
12:2:139 Tandem photonic-crystal thin films surpassing Lambertian light-trapping limit over broad bandwidth and angular range
DOI:10.1063/1.4867892 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Oskooi, Ardavan;Tanaka, Yoshinori;Noda, Susumu;
12:2:140 Large Scale and Orientation-Controllable Nanotip Structures on CuInS2, Cu(In,Ga)S-2, CuInSe2, and Cu(In,Ga)Se-2 by Low Energy Ion Beam Bombardment Process: Growth and Characterization
DOI:10.1021/am501161j JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Yen, Yu-Ting;Wang, Yi-Chung;Chen, Yu-Ze;Tsai, Hung-Wei;Hu, Fan;Lin, Shih-Ming;Chen, Yi-Ju;Lai, Chih-Chung;Liu, Wenlong;Wang, Tsang-Hsiu;Hong, Hwen-Fen;Chueh, Yu-Lun;
12:2:141 Zinc-doped gallium phosphide nanowires for photovoltaic structures
DOI:10.1016/j.apsusc.2012.09.109 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Hasenoehrl, Stanislav;Elias, Peter;Soltys, Jan;Stoklas, Roman;Dujavova-Laurencikova, Agata;Novak, Jozef;
12:2:142 Optoelectronic analysis of multijunction wire array solar cells
DOI:10.1063/1.4812397 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Turner-Evans, Daniel B.;Chen, Christopher T.;Emmer, Hal;McMahon, William E.;Atwater, Harry A.;
12:2:143 Light trapping in hybrid nanopyramid and nanohole structure silicon solar cell beyond the Lambertian limit
DOI:10.1063/1.4893707 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;Wang, Hao;Xu Xiaoyan;Yu, Hongyu;
12:2:144 Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment
DOI:10.1007/s11051-013-1915-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Bai, Fan;Li, Meicheng;Huang, Rui;Yu, Yue;Gu, Tiansheng;Chen, Zhao;Fan, Huiyang;Jiang, Bing;
12:2:145 Maskless fabrication of selectively sized silicon nanostructures for solar cell application
DOI:10.1116/1.4732789 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Dou, Bingfei;Jia, Rui;Li, Haofeng;Chen, Chen;Meng, Yanlong;Ding, Wuchang;Liu, Xinyu;Ye, Tianchun;Wang, Yunfeng;
12:2:146 Near-Field Electromagnetic Theory for Thin Solar Cells
DOI:10.1103/PhysRevLett.109.138701 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:9 AU: Niv, A.;Gharghi, M.;Gladden, C.;Miller, O. D.;Zhang, X.;
12:2:147 Comparison of pillar-array and hole-array patterned Si solar cells
DOI:10.1016/j.matlet.2013.08.132 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Hong, Seung-Hyouk;Kim, Hyunyub;Kim, Hyunki;Kim, Joondong;
12:2:148 Rapid thermal-treated transparent electrode for photodiode applications
DOI:10.1016/j.matlet.2013.10.017 JN:MATERIALS LETTERS PY:2014
TC:12 AU: Kim, Hyunki;Hong, Seung-Hyouk;Park, Yun Chang;Lee, Jaekuen;Jeon, Chil-Hwan;Kim, Joondong;
12:2:149 High density micro-pyramids with silicon nanowire array for photovoltaic applications
DOI:10.1088/0957-4484/25/48/485202 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Rahman, Tasmiat;Navarro-Cia, Miguel;Fobelets, Kristel;
12:2:150 Geometric dependence of antireflective nanocone arrays towards ultrathin crystalline silicon solar cells
DOI:10.1088/0957-4484/25/41/415401 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Zhou, Keya;Li, Xiaopeng;Liu, Shutian;Lee, Jung-Ho;
12:2:151 Nanotechnology enhanced solar cells prepared on laser-crystallized polycrystalline thin films (< 10 mu m)
DOI:10.1016/j.solmat.2014.03.040 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Jia, Guobin;Andrae, Gudrun;Gawlik, Annett;Schonherr, Sven;Plentz, Jonathan;Eisenhawer, Bjorn;Pliewischkies, Torsten;Dellith, Andrea;Falk, Fritz;
12:2:152 High-efficiency core-shell solar cell array from Si wafer
DOI:10.1007/s00339-012-6818-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:5 AU: Guo, Ning;Wei, Jinquan;Shu, Qinke;Jia, Yi;Song, Shuang;Xu, Ying;Wang, Hongguang;Li, Peixu;Zhu, Hongwei;Wang, Kunlin;Wu, Dehai;
12:2:153 Enhancement of photocurrent in ultrathin active-layer photodetecting devices with photonic crystals
DOI:10.1063/1.4759149 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Shigeta, Hiroaki;Fujita, Masayuki;Tanaka, Yoshinori;Oskooi, Ardavan;Ogawa, Hiroyuki;Tsuda, Yusuke;Noda, Susumu;
12:2:154 Design guidelines for slanting silicon nanowire arrays for solar cell application
DOI:10.1063/1.4819175 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;Wang, Hao;Yu, HongYu;
12:2:155 Effect of nanohole structure on pyramid textured surface on photo-voltaic performance of silicon solar cell
DOI:10.1063/1.4894408 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Baek, Seung-Wook;Lee, Gon-Sub;Park, Jea-Gun;
12:2:156 Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells
DOI:10.1063/1.4848996 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Ding, Wuchang;Jia, Rui;Li, Haofeng;Chen, Chen;Sun, Yun;Jin, Zhi;Liu, Xinyu;
12:2:157 Light trapping properties of metallic gratings on wafer-based silicon solar cells
DOI:10.1016/j.nanoen.2012.10.008 JN:NANO ENERGY PY:2013
TC:1 AU: Sammito, Davide;Zilio, Pierfrancesco;Zacco, Gabriele;Janusonis, Julius;Romanato, Filippo;
12:2:158 Wavelength-Dependent Absorption in Structurally Tailored Randomly Branched Vertical Arrays of InSb Nanowires
DOI:10.1021/nl302803e JN:NANO LETTERS PY:2012
TC:4 AU: Mohammad, Asaduzzaman;Das, Suprem R.;Khan, M. Ryyan;Alam, Muhammad A.;Janes, David B.;
12:2:159 Assessing Charge Carrier Trapping in Silicon Nanowires Using Picosecond Conductivity Measurements
DOI:10.1021/nl3017835 JN:NANO LETTERS PY:2012
TC:6 AU: Ulbricht, Ronald;Kurstjens, Rufi;Bonn, Mischa;
12:2:160 Composition-Graded Nanowire Solar Cells Fabricated in a Single Process for Spectrum-Splitting Photovoltaic Systems
DOI:10.1021/nl502662h JN:NANO LETTERS PY:2014
TC:3 AU: Caselli, Derek;Liu, Zhicheng;Shelhammer, David;Ning, Cun-Zheng;
12:2:161 Comparative experimental and simulative investigations of radial p-n junction Si microwire array solar cells
DOI:10.1016/j.solmat.2012.04.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:13 AU: Lee, Eunsongyi;Kim, Yoonjung;Gwona, Minji;Kim, Dong-Wook;Baek, Seong-Ho;Kim, Jae Hyun;
12:2:162 Improved light scattering and surface plasmon tuning in amorphous silicon solar cells by double-walled carbon nanotubes
DOI:10.1016/j.solmat.2012.01.038 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:4 AU: Tu, Wei-Chen;Chang, Yi-Tsung;Wang, Hsin-Ping;Yang, Chieh-Hung;Huang, Chia-Tze;He, Jr-Hau;Lee, Si-Chen;
12:2:163 Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces
DOI:10.1063/1.4867092 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Shu-Yi;Borca-Tasciuc, Diana-Andra;Kaminski, Deborah A.;
12:2:164 Morphology-tunable assembly of periodically aligned Si nanowire and radial pn junction arrays for solar cell applications
DOI:10.1016/j.apsusc.2012.02.091 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Li, Xiaocheng;Liang, Kun;Tay, Beng Kang;Teo, Edwin H. T.;
12:2:165 On the design and applicability of nanowire solar cells using low-grade semiconductors
DOI:10.1063/1.3679134 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Gharghi, Majid;
12:2:166 Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application
DOI:10.1063/1.4901466 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;Wang, Hao;Yu, Hongyu;
12:2:167 Synthesis of Macro-Porous Anti-Reflective Materials from the TEOS-PS System for a Solar Cover Glass
DOI:10.1080/15421406.2013.850928 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2013
TC:0 AU: Park, No-Kuk;Kim, Do Hyeong;Kim, Min-Jung;Lee, Tae Jin;Lee, Seung Hyun;Lee, Seung Hun;
12:2:168 Fabrication of ordered porous anodic alumina with ultra-large interpore distances using ultrahigh voltages
DOI:10.1016/j.materresbull.2014.05.037 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:7 AU: Chen, Xi;Yu, Dongliang;Cao, Liu;Zhu, Xufei;Song, Ye;Huang, Hongtao;Lu, Linfeng;Chen, Xiaoyuan;
12:2:169 Spin-coated Ag nanoparticles for enhancing light absorption of thin film a-Si:H solar cells
DOI:10.1364/OME.4.000346 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Yeo, Chan Il;Choi, Jang Hun;Kim, Joon Beom;Lee, Jeong Chul;Lee, Yong Tak;
12:2:170 An efficient light-harvesting scheme using SiO2 nanorods for InGaN multiple quantum well solar cells
DOI:10.1016/j.solmat.2012.04.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:7 AU: Ho, C. H.;Lin, G. J.;Fu, P. H.;Lin, C. A.;Yang, P. C.;Chan, I-Min;Lai, K. Y.;He, J. H.;
12:2:171 Advanced microhole arrays for light trapping in thin film silicon solar cells
DOI:10.1016/j.solmat.2013.11.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:1 AU: Lockau, Daniel;Sontheimer, Tobias;Preidel, Veit;Ruske, Florian;Hammerschmidt, Martin;Becker, Christiane;Schmidt, Frank;Rech, Bernd;
12:2:172 Negative refractive index materials for improved solar cells
DOI:10.1103/PhysRevB.88.115403 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Fahr, Stephan;Rockstuhl, Carsten;Lederer, Falk;
12:2:173 Design and mechanism of cost-effective and highly efficient ultrathin (< 0.5 mu m) GaAs solar cells employing nano/micro-hemisphere surface texturing
DOI:10.1063/1.4799731 JN:AIP ADVANCES PY:2013
TC:1 AU: Li, J. S.;Li, Y. L.;He, D. Y.;Yu, H. Y.;Yan, X. B.;
12:2:174 Gold Contamination in VLS-Grown Si Nanowires: Multiwavelength Anomalous Diffraction Investigations
DOI:10.1021/cm301739n JN:CHEMISTRY OF MATERIALS PY:2012
TC:8 AU: Dupre, Ludovic;Buttard, Denis;Leclere, Cedric;Renevier, Hubert;Gentile, Pascal;
12:2:175 Optical and electrical characteristics of asymmetric nanowire solar cells
DOI:10.1063/1.3699212 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Ko, Myung-Dong;Baek, Chang-Ki;Rim, Taiuk;Park, Sooyoung;Jeong, Yoon-Ha;
12:2:176 Photovoltaic absorption enhancement in thin-film solar cells by non-resonant beam collimation by submicron dielectric particles
DOI:10.1063/1.4820573 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Simovski, Constantin R.;Shalin, Alexander S.;Voroshilov, Pavel M.;Belov, Pavel A.;
12:2:177 Efficiency Analysis of III-V Axial and Core-Shell Nanowire Solar Cells
DOI:10.1166/jctn.2012.2080 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:6 AU: Yu, Shuqing;Kupec, Jan;Witzigmann, Bernd;
12:2:178 Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
DOI:10.1116/1.3669521 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:6 AU: Tang, X.;Francis, L. A.;Simonis, P.;Haslinger, M.;Delamare, R.;Deschaume, O.;Flandre, D.;Defrance, P.;Jonas, A. M.;Vigneron, J. P.;Raskin, J. P.;
12:2:179 Silicon nanostructure solar cells with excellent photon harvesting
DOI:10.1116/1.3548876 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:6 AU: Chen, Chen;Jia, Rui;Yue, Huihui;Li, Haofeng;Liu, Xinyu;Ye, Tianchun;Kasai, Seiya;Tamotsu, Hashizume;Wu, Nanjian;Wang, Shanli;Chu, Junhao;Xu, Bingshe;
12:2:180 Application of ZnO Single Crystal Rods as Anti-Reflective Material for PV Cells
DOI:10.1080/15421406.2012.692235 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:1 AU: Park, No-Kuk;Kim, Yong Sul;Chang, Jun Hyuk;Kim, Do Hyeong;Ryu, Si Ok;Lee, Tae Jin;Kim, Heun Duk;Lee, Won Gun;
12:2:181 Growth of vertically aligned CdTe nanorod arrays through patterned electrodeposition
DOI:10.1016/j.nanoen.2013.05.004 JN:NANO ENERGY PY:2013
TC:2 AU: Mishra, Sukhada;Nath, Manashi;
12:2:182 Efficiency above the Shockley-Queisser Limit by Using Nanophotonic Effects To Create Multiple Effective Bandgaps With a Single Semiconductor
DOI:10.1021/nl403653j JN:NANO LETTERS PY:2014
TC:6 AU: Yu, Zongfu;Sandhu, Sunil;Fan, Shanhui;
12:2:183 Microsystems enabled photovoltaics: 14.9% efficient 14 mu m thick crystalline silicon solar cell
DOI:10.1016/j.solmat.2010.09.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:33 AU: Cruz-Campa, Jose L.;Okandan, Murat;Resnick, Paul J.;Clews, Peggy;Pluym, Tammy;Grubbs, Robert K.;Gupta, Vipin P.;Zubia, David;Nielson, Gregory N.;
12:2:184 Influence of the microstructure of n-type Si:H and passivation by ultrathin Al2O3 on the efficiency of Si radial junction nanowire array solar cells
DOI:10.1016/j.solmat.2014.04.034 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Li, KunTang;Wang, XiuQin;Lu, PengFei;Ding, JianNing;Yuan, NingYi;
12:2:185 Enhanced Near-Bandgap Response in InP Nanopillar Solar Cells
DOI:10.1002/aenm.201400061 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:2 AU: Battaglia, Corsin;Xu, Jingsan;Zheng, Maxwell;Yin, Xingtian;Hettick, Mark;Chen, Kevin;Haegel, Nancy;Javey, Ali;
12:2:186 Optical properties of nanocrystal-silicon thin films on silicon nanopillar arrays after thermal annealing
DOI:10.1016/j.apsusc.2012.11.004 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Li, Yonglei;Qian, Bo;Li, Cong;Xu, Jun;Jiang, Chunping;
12:2:187 Deterministic Nucleation of InP on Metal Foils with the Thin-Film Vapor-Liquid-Solid Growth Mode
DOI:10.1021/cm403403v JN:CHEMISTRY OF MATERIALS PY:2014
TC:2 AU: Kapadia, Rehan;Yu, Zhibin;Hettick, Mark;Xu, Jingsan;Zheng, Maxwell S.;Chen, Cheng-Ying;Balan, Arunima D.;Chrzan, Daryl C.;Javey, Ali;
12:2:188 The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires
DOI:10.1016/j.jcrysgro.2011.09.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Kendrick, Chito E.;Redwing, Joan M.;
12:2:189 Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4
DOI:10.1557/jmr.2011.144 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:7 AU: Eichfeld, Sarah M.;Shen, Haoting;Eichfeld, Chad M.;Mohney, Suzanne E.;Dickey, Elizabeth C.;Redwing, Joan M.;
12:2:190 Formation of an Anti-Contamination Layer with Polystyrene Nanobeads over Cover Glass for Solar Cells
DOI:10.1080/15421406.2014.944776 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Park, No-Kuk;Kim, Yong Sul;Kim, Min Jung;Lee, Tae Jin;Lee, Seung Hyun;Lee, Seung Hun;
12:2:191 Optimization of textured structure on crystalline silicon wafer for heterojunction solar cell
DOI:10.1016/j.matchemphys.2011.12.052 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:8 AU: Lien, Shui-Yang;Yang, Chih-Hsiang;Hsu, Chia-Hsun;Lin, Yang-Shih;Wang, Chao-Chun;Wuu, Dong-Sing;
12:2:192 Optical absorption enhancement in a Si nanohole structure with hexagonal unit cell for solar cell application
DOI:10.1088/0957-4484/25/41/415303 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;Wang, Jianxiong;Wang, Hao;Yu, Hongyu;
12:2:193 Opportunities in nanometer sized Si wires for PV applications
DOI:10.1016/j.pmatsci.2013.03.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2013
TC:7 AU: Mann, Jaswinder Kaur;Kurstjens, Rufi;Pourtois, Geoffrey;Gilbert, Melina;Dross, Frederic;Poortmans, Jozef;
12:2:194 Electrochemical Nanostructuring of n-GaAs Photoelectrodes
DOI:10.1021/nn4020104 JN:ACS NANO PY:2013
TC:1 AU: Ritenour, Andrew J.;Levinrad, Solomon;Bradley, Colin;Cramer, Richard C.;Boettcher, Shannon W.;
12:2:195 Black germanium produced by inductively coupled plasma etching
DOI:10.1016/j.matlet.2012.12.014 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Schicho, Sandra;Jaouad, Abdelatif;Sellmer, Christian;Morris, Denis;Aimez, Vincent;Ares, Richard;
12:2:196 Self-assembly of an antireflective moth-like structure using antibody-functionalized nanowires and nanopore arrays
DOI:10.1088/0957-4484/22/47/475601 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Chen, Yu-Shiun;Hung, Ning;Chou, Li-Jen;Chiou, Jin-Chern;Hong, Meng-Yen;Huang, G. Steven;
12:2:197 Surface recombination analysis in silicon-heterojunction solar cells
DOI:10.1016/j.solmat.2009.09.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:5 AU: Barrio, R.;Gandia, J. J.;Carabe, J.;Gonzalez, N.;Torres, I.;Munoz, D.;Voz, C.;
12:2:198 Fabrication of antireflective nanostructures for crystalline silicon solar cells by reactive ion etching
DOI:10.1016/j.tsf.2012.09.047 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Lin, Hsin-Han;Chen, Wen-Hua;Wang, Chi-Jen;Hong, Franklin Chau-Nan;
12:2:199 Thermodynamic mechanism of nickel silicide nanowire growth
DOI:10.1063/1.4768231 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Kim, Joondong;
12:2:200 Simple approach for improving gold deposition inside nanoporous alumina template on Si substrate
DOI:10.1016/j.apsusc.2014.02.103 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Nguyen, Van Hoang;Hoshi, Yusuke;Usami, Noritaka;
12:2:201 Electronic states at the interface between indium tin oxide and silicon
DOI:10.1063/1.3643002 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Malmbekk, H.;Vines, L.;Monakhov, E. V.;Svensson, B. G.;
12:2:202 In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD
DOI:10.1016/j.jcrysgro.2012.03.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Xie, Xiaobing;Zeng, Xiangbo;Yang, Ping;Wang, Chao;Wang, Qiming;
12:2:203 Surface Characterization of Antireflective Thin Films
DOI:10.1166/jctn.2012.2181 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:1 AU: Setina, Janina;Mezinskis, Gundars;Andersone, Daina;
12:2:204 Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers
DOI:10.1557/jmr.2010.19 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:6 AU: Garozzo, C.;Puglisi, R. A.;Bongiorno, C.;Scalese, S.;Rimini, E.;Lombardo, S.;
12:2:205 The use of the grey-Taguchi method for the optimization of a silicon nanowires array synthesized using electroless Ag-assisted etching
DOI:10.1007/s11051-013-1866-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Chiou, Ai-Huei;Wu, Wen-Fa;Chen, Ding-Yeng;Hsu, Chun-Yao;
12:2:206 Antireflection properties and solar cell application of silicon nanostructures
DOI:10.1116/1.3591344 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:5 AU: Yue, Huihui;Jia, Rui;Chen, Chen;Ding, Wuchang;Meng, Yanlong;Wu, Deqi;Wu, Dawei;Chen, Wei;Liu, Xinyu;Jin, Zhi;Wang, Wenwu;Ye, Tianchun;
12:2:207 Radial p-n Junction Enhances Light-Trapping in Si Nanowire Solar Cells
DOI:10.1557/mrs2010.545 JN:MRS BULLETIN PY:2010
TC:1 AU: Ziebell, Tiffany D.;
12:2:208 Effect of annealing temperature on the copper nanoparticles deposited on the silicon nanoporous pillar array
DOI:10.1016/j.mssp.2012.07.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Yang, Xiao Hui;Zeng, Fan Guang;Li, Xin Jian;
12:2:209 Polarization dependent solar cell conversion efficiency at oblique incident angles and the corresponding improvement using surface nanoparticle coating
DOI:10.1088/0957-4484/22/48/485202 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Hung, Yen-Jen;Hsu, Shao-Sun;Wang, Yu-Ting;Chang, Chun-Hsiang;Chen, Liang-Yi;Su, Liang-Yu;Huang, Jian-Jang;
12:2:210 Cu2S/CIGS core/shell nanowire arrays with epitaxial CIGS growth
DOI:10.1016/j.solmat.2014.06.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:1 AU: Li, Liqiang;Zhang, Wenxing;Ren, Shan;Chen, Wencong;
12:2:211 Preparation technique for copper-plating on Si nanoporous pillar array
DOI:10.1016/j.tsf.2010.07.019 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Yang, Xiao Hui;Jiang, Wei Fen;Li, Xin Jian;
12:2:212 A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cell
DOI:10.1016/j.tsf.2011.10.094 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Chang, S. T.;Hsieh, B. -F.;Liu, Y. -C.;
12:3:1 Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
DOI:10.1021/nl903688v JN:NANO LETTERS PY:2010
TC:179 AU: Joyce, Hannah J.;Wong-Leung, Jennifer;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;
12:3:2 Predicted band structures of III-V semiconductors in the wurtzite phase
DOI:10.1103/PhysRevB.81.155210 JN:PHYSICAL REVIEW B PY:2010
TC:103 AU: De, A.;Pryor, Craig E.;
12:3:3 Crystal Phase Engineering in Single InAs Nanowires
DOI:10.1021/nl101632a JN:NANO LETTERS PY:2010
TC:83 AU: Dick, Kimberly A.;Thelander, Claes;Samuelson, Lars;Caroff, Philippe;
12:3:4 Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
DOI:10.1103/PhysRevB.83.045303 JN:PHYSICAL REVIEW B PY:2011
TC:71 AU: Heiss, Martin;Conesa-Boj, Sonia;Ren, Jun;Tseng, Hsiang-Han;Gali, Adam;Rudolph, Andreas;Uccelli, Emanuele;Peiro, Francesca;Ramon Morante, Joan;Schuh, Dieter;Reiger, Elisabeth;Kaxiras, Efthimios;Arbiol, Jordi;Fontcuberta i Morral, Anna;
12:3:5 Crystal Phase Quantum Dots
DOI:10.1021/nl903534n JN:NANO LETTERS PY:2010
TC:91 AU: Akopian, N.;Patriarche, G.;Liu, L.;Harmand, J. -C.;Zwiller, V.;
12:3:6 Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
DOI:10.1021/nl2008339 JN:NANO LETTERS PY:2011
TC:76 AU: Thelander, Claes;Caroff, Philippe;Plissard, Sebastien;Dey, Anil W.;Dick, Kimberly A.;
12:3:7 Electronic bands of III-V semiconductor polytypes and their alignment
DOI:10.1103/PhysRevB.86.075208 JN:PHYSICAL REVIEW B PY:2012
TC:32 AU: Belabbes, Abderrezak;Panse, Christian;Furthmueller, Juergen;Bechstedt, Friedhelm;
12:3:8 Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
DOI:10.1021/nl1041512 JN:NANO LETTERS PY:2011
TC:45 AU: Kriegner, Dominik;Panse, Christian;Mandl, Bernhard;Dick, Kimberly A.;Keplinger, Mario;Persson, Johan M.;Caroff, Philippe;Ercolani, Daniele;Sorba, Lucia;Bechstedt, Friedhelm;Stangl, Julian;Bauer, Guenther;
12:3:9 Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
DOI:10.1103/PhysRevB.85.045323 JN:PHYSICAL REVIEW B PY:2012
TC:39 AU: Jahn, U.;Laehnemann, J.;Pfueller, C.;Brandt, O.;Breuer, S.;Jenichen, B.;Ramsteiner, M.;Geelhaar, L.;Riechert, H.;
12:3:10 Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires
DOI:10.1021/nl4028186 JN:NANO LETTERS PY:2013
TC:10 AU: Corfdir, Pierre;Van Hattem, Barbara;Uccelli, Emanuele;Conesa-Boj, Sonia;Lefebvre, Pierre;Fontcuberta i Morral, Anna;Phillips, Richard T.;
12:3:11 A Story Told by a Single Nanowire: Optical Properties of Wurtzite GaAs
DOI:10.1021/nl3025714 JN:NANO LETTERS PY:2012
TC:38 AU: Ahtapodov, Lyubomir;Todorovic, Jelena;Olk, Phillip;Mjaland, Terje;Slattnes, Patrick;Dheeraj, Dasa L.;van Helvoort, Antonius T. J.;Fimland, Bjorn-Ove;Weman, Helge;
12:3:12 A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires. Using Only Group V Flow
DOI:10.1021/nl401554w JN:NANO LETTERS PY:2013
TC:32 AU: Lehmann, Sebastian;Wallentin, Jesper;Jacobsson, Daniel;Deppert, Knut;Dick, Kimberly A.;
12:3:13 Direct Band Gap Wurtzite Gallium Phosphide Nanowires
DOI:10.1021/nl304723c JN:NANO LETTERS PY:2013
TC:60 AU: Assali, S.;Zardo, I.;Plissard, S.;Kriegner, D.;Verheijen, M. A.;Bauer, G.;Meijerink, A.;Belabbes, A.;Bechstedt, F.;Haverkort, J. E. M.;Bakkers, E. P. A. M.;
12:3:14 Crystal Structure Transfer in Core/Shell Nanowires
DOI:10.1021/nl200208q JN:NANO LETTERS PY:2011
TC:40 AU: Algra, Rienk E.;Hocevar, Moira;Verheijen, Marcel A.;Zardo, Ilaria;Immink, George G. W.;van Enckevort, Willem J. P.;Abstreiter, Gerhard;Kouwenhoven, Leo P.;Vlieg, Elias;Bakkers, Erik P. A. M.;
12:3:15 Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
DOI:10.1088/0957-4484/24/21/214006 JN:NANOTECHNOLOGY PY:2013
TC:42 AU: Joyce, Hannah J.;Docherty, Callum J.;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Lloyd-Hughes, James;Herz, Laura M.;Johnston, Michael B.;
12:3:16 The Role of Surface Energies and Chemical Potential during Nanowire Growth
DOI:10.1021/nl104267p JN:NANO LETTERS PY:2011
TC:44 AU: Algra, Rienk E.;Verheijen, Marcel A.;Feiner, Lou-Fe;Immink, George G. W.;van Enckevort, Willem J. P.;Vlieg, Elias;Bakkers, Erik P. A. M.;
12:3:17 Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
DOI:10.1021/nl102109s JN:NANO LETTERS PY:2010
TC:37 AU: Zhang, Lijun;Luo, Jun-Wei;Zunger, Alex;Akopian, Nika;Zwiller, Val;Harmand, Jean-Christophe;
12:3:18 Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
DOI:10.1021/nl5021409 JN:NANO LETTERS PY:2014
TC:15 AU: Gao, Qian;Saxena, Dhruv;Wang, Fan;Fu, Lan;Mokkapati, Sudha;Guo, Yanan;Li, Li;Wong-Leung, Jennifer;Caroff, Philippe;Tan, Hark Hoe;Jagadish, Chennupati;
12:3:19 Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
DOI:10.1103/PhysRevB.85.045309 JN:PHYSICAL REVIEW B PY:2012
TC:19 AU: Spirkoska, D.;Efros, Al L.;Lambrecht, W. R. L.;Cheiwchanchamnangij, T.;Fontcuberta i Morral, A.;Abstreiter, G.;
12:3:20 Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
DOI:10.1103/PhysRevB.87.125304 JN:PHYSICAL REVIEW B PY:2013
TC:10 AU: Graham, A. M.;Corfdir, P.;Heiss, M.;Conesa-Boj, S.;Uccelli, E.;Fontcuberta i Morral, A.;Phillips, R. T.;
12:3:21 Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires
DOI:10.1021/nl101747z JN:NANO LETTERS PY:2010
TC:33 AU: Wallentin, Jesper;Ek, Martin;Wallenberg, L. Reine;Samuelson, Lars;Deppert, Knut;Borgstrom, Magnus T.;
12:3:22 Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
DOI:10.1103/PhysRevB.83.125307 JN:PHYSICAL REVIEW B PY:2011
TC:25 AU: Ketterer, Bernt;Heiss, Martin;Livrozet, Marie J.;Rudolph, Andreas;Reiger, Elisabeth;Fontcuberta i Morral, Anna;
12:3:23 High optical quality single crystal phase wurtzite and zincblende InP nanowires
DOI:10.1088/0957-4484/24/11/115705 JN:NANOTECHNOLOGY PY:2013
TC:22 AU: Vu, Thuy T. T.;Zehender, Tilman;Verheijen, Marcel A.;Plissard, Sebastien R.;Immink, George W. G.;Haverkort, Jos E. M.;Bakkers, Erik P. A. M.;
12:3:24 Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz Spectroscopy
DOI:10.1021/nl3026828 JN:NANO LETTERS PY:2012
TC:31 AU: Joyce, Hannah J.;Wong-Leung, Jennifer;Yong, Chaw-Keong;Docherty, Callum J.;Paiman, Suriati;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Lloyd-Hughes, James;Herz, Laura M.;Johnston, Michael B.;
12:3:25 Illuminating the Second Conduction Band and Spin-Orbit Energy in Single Wurtzite InP Nanowires
DOI:10.1021/nl4028878 JN:NANO LETTERS PY:2013
TC:9 AU: Perera, Saranga;Shi, Teng;Fickenscher, Melodie A.;Jackson, Howard E.;Smith, Leigh M.;Yarrison-Rice, Jan M.;Paiman, Suriati;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:3:26 Zn3P2-Zn3As2 Solid Solution Nanowires
DOI:10.1021/nl5037897 JN:NANO LETTERS PY:2015
TC:0 AU: Im, Hyung Soon;Park, Kidong;Jang, Dong Myung;Jung, Chan Su;Park, Jeunghee;Yoo, Seung Jo;Kim, Jin-Gyu;
12:3:27 Twinning Superlattice Formation in GaAs Nanowires
DOI:10.1021/nn403390t JN:ACS NANO PY:2013
TC:15 AU: Burgess, Tim;Breuer, Steffen;Caroff, Philippe;Wong-Leung, Jennifer;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:3:28 Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy
DOI:10.1063/1.4822345 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Corfdir, P.;Van Hattem, B.;Uccelli, E.;Fontcuberta i Morral, A.;Phillips, R. T.;
12:3:29 Electron Trapping in InP Nanowire FETs with Stacking Faults
DOI:10.1021/nl203213d JN:NANO LETTERS PY:2012
TC:27 AU: Wallentin, Jesper;Ek, Martin;Wallenberg, L. Reine;Samuelson, Lars;Borgstrom, Magnus T.;
12:3:30 Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning
DOI:10.1021/nl4016182 JN:NANO LETTERS PY:2013
TC:31 AU: Cui, Yingchao;Wang, Jia;Plissard, Sebastien R.;Cavalli, Alessandro;Vu, Thuy T. T.;van Veldhoven, Rene P. J.;Gao, Lu;Trainor, Mike;Verheijen, Marcel A.;Haverkort, Jos E. M.;Bakkers, Erik P. A. M.;
12:3:31 Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces
DOI:10.1021/nl402424x JN:NANO LETTERS PY:2013
TC:21 AU: Hjort, M.;Lehmann, S.;Knutsson, J.;Timm, R.;Jacobsson, D.;Lundgren, E.;Dick, K. A.;Mikkelsen, A.;
12:3:32 Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations
DOI:10.1103/PhysRevB.82.125327 JN:PHYSICAL REVIEW B PY:2010
TC:27 AU: Gadret, E. G.;Dias, G. O.;Dacal, L. C. O.;de Lima, M. M., Jr.;Ruffo, C. V. R. S.;Iikawa, F.;Brasil, M. J. S. P.;Chiaramonte, T.;Cotta, M. A.;Tizei, L. H. G.;Ugarte, D.;Cantarero, A.;
12:3:33 Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method
DOI:10.1088/0957-4484/22/26/265606 JN:NANOTECHNOLOGY PY:2011
TC:22 AU: Bolinsson, Jessica;Caroff, Philippe;Mandl, Bernhard;Dick, Kimberly A.;
12:3:34 Growth of InAs/InP core-shell nanowires with various pure crystal structures
DOI:10.1088/0957-4484/23/28/285601 JN:NANOTECHNOLOGY PY:2012
TC:26 AU: Ghalamestani, Sepideh Gorji;Heurlin, Magnus;Wernersson, Lars-Erik;Lehmann, Sebastian;Dick, Kimberly A.;
12:3:35 Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires
DOI:10.1021/nl202365q JN:NANO LETTERS PY:2011
TC:33 AU: Ikejiri, Keitaro;Kitauchi, Yusuke;Tomioka, Katsuhiro;Motohisa, Junichi;Fukui, Takashi;
12:3:36 GaP-ZnS Pseudobinary Alloy Nanowires
DOI:10.1021/nl5028843 JN:NANO LETTERS PY:2014
TC:1 AU: Park, Kidong;Lee, Jung Ah;Im, Hyung Soon;Jung, Chan Su;Kim, Han Sung;Park, Jeunghee;Lee, Chang-Lyoul;
12:3:37 Band gap of wurtzite GaAs: A resonant Raman study
DOI:10.1103/PhysRevB.86.075317 JN:PHYSICAL REVIEW B PY:2012
TC:19 AU: Kusch, Patryk;Breuer, Steffen;Ramsteiner, Manfred;Geelhaar, Lutz;Riechert, Henning;Reich, Stephanie;
12:3:38 Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates
DOI:10.1063/1.4829455 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Falcao, B. P.;Leitao, J. P.;Correia, M. R.;Soares, M. R.;Morales, F. M.;Manuel, J. M.;Garcia, R.;Gustafsson, A.;Moreira, M. V. B.;de Oliveira, A. G.;Gonzalez, J. C.;
12:3:39 Interband polarized absorption in InP polytypic superlattices
DOI:10.1063/1.4901209 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Faria Junior, P. E.;Campos, T.;Sipahi, G. M.;
12:3:40 Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires
DOI:10.1021/nl200492g JN:NANO LETTERS PY:2011
TC:27 AU: Wallentin, Jesper;Mergenthaler, Kilian;Ek, Martin;Wallenberg, L. Reine;Samuelson, Lars;Deppert, Knut;Pistol, Mats-Erik;Borgstrom, Magnus T.;
12:3:41 Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires
DOI:10.1103/PhysRevB.87.235304 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: De Luca, Marta;Lavenuta, Giovanna;Polimeni, Antonio;Rubini, Silvia;Grillo, Vincenzo;Mura, Francesco;Miriametro, Antonio;Capizzi, Mario;Martelli, Faustino;
12:3:42 Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy
DOI:10.1021/nn305112a JN:ACS NANO PY:2013
TC:11 AU: Funk, Stefan;Li, Ang;Ercolani, Daniele;Gemmi, Mauro;Sorba, Lucia;Zardo, Ilaria;
12:3:43 Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
DOI:10.1063/1.4821293 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Capiod, P.;Xu, T.;Nys, J. P.;Berthe, M.;Patriarche, G.;Lymperakis, L.;Neugebauer, J.;Caroff, P.;Dunin-Borkowski, R. E.;Ebert, Ph.;Grandidier, B.;
12:3:44 Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy
DOI:10.1088/0957-4484/24/1/015601 JN:NANOTECHNOLOGY PY:2013
TC:18 AU: Dheeraj, D. L.;Munshi, A. M.;Scheffler, M.;van Helvoort, A. T. J.;Weman, H.;Fimland, B. O.;
12:3:45 Structural Transition in Indium Phosphide Nanowires
DOI:10.1021/nl1000407 JN:NANO LETTERS PY:2010
TC:48 AU: Kitauchi, Yusuke;Kobayashi, Yasunori;Tomioka, Katsuhiro;Hara, Shinjiro;Hiruma, Kenji;Fukui, Takashi;Motohisa, Junichi;
12:3:46 Reversible Switching of InP Nanowire Growth Direction by Catalyst Engineering
DOI:10.1021/nl401767b JN:NANO LETTERS PY:2013
TC:21 AU: Wang, Jia;Plissard, Sebastien R.;Verheijen, Marcel A.;Feiner, Lou-Fe;Cavalli, Alessandro;Bakkers, Erik P. A. M.;
12:3:47 Band structure parameters of wurtzite and zinc-blende GaAs under strain in the GW approximation
DOI:10.1103/PhysRevB.84.035203 JN:PHYSICAL REVIEW B PY:2011
TC:22 AU: Cheiwchanchamnangij, Tawinan;Lambrecht, Walter R. L.;
12:3:48 Polarized Light Absorption in Wurtzite InP Nanowire Ensembles
DOI:10.1021/nl5038374 JN:NANO LETTERS PY:2015
TC:2 AU: De Luca, Marta;Zilli, Attilio;Fonseka, H. Aruni;Mokkapati, Sudha;Miriametro, Antonio;Tan, Hark Hoe;Smith, Leigh Morris;Jagadish, Chennupati;Capizzi, Mario;Polimeni, Antonio;
12:3:49 Combinatorial Approaches to Understanding Polytypism in III-V Nanowires
DOI:10.1021/nn301477x JN:ACS NANO PY:2012
TC:21 AU: Johansson, Jonas;Bolinsson, Jessica;Ek, Martin;Caroff, Philippe;Dick, Kimberly A.;
12:3:50 Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires
DOI:10.1063/1.3473779 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Jancu, J. -M.;Gauthron, K.;Largeau, L.;Patriarche, G.;Harmand, J. -C.;Voisin, P.;
12:3:51 Excitonic properties of wurtzite InP nanowires grown on silicon substrate
DOI:10.1088/0957-4484/24/3/035704 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Alouane, M. H. Hadj;Chauvin, N.;Khmissi, H.;Naji, K.;Ilahi, B.;Maaref, H.;Patriarche, G.;Gendry, M.;Bru-Chevallier, C.;
12:3:52 Parameter space mapping of InAs nanowire crystal structure
DOI:10.1116/1.3593457 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:24 AU: Dick, Kimberly A.;Bolinsson, Jessica;Messing, Maria E.;Lehmann, Sebastian;Johansson, Jonas;Caroff, Philippe;
12:3:53 Generic nano-imprint process for fabrication of nanowire arrays
DOI:10.1088/0957-4484/21/6/065305 JN:NANOTECHNOLOGY PY:2010
TC:31 AU: Pierret, Aurelie;Hocevar, Moira;Diedenhofen, Silke L.;Algra, Rienk E.;Vlieg, E.;Timmering, Eugene C.;Verschuuren, Marc A.;Immink, George W. G.;Verheijen, Marcel A.;Bakkers, Erik P. A. M.;
12:3:54 Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction
DOI:10.1088/0957-4484/22/42/425704 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Kriegner, D.;Wintersberger, E.;Kawaguchi, K.;Wallentin, J.;Borgstrom, M. T.;Stangl, J.;
12:3:55 Tailoring the Optical Characteristics of Microsized InP Nanoneedles Directly Grown on Silicon
DOI:10.1021/nl403712f JN:NANO LETTERS PY:2014
TC:13 AU: Li, Kun;Sun, Hao;Ren, Fan;Ng, Kar Wei;Tran, Thai-Truong D.;Chen, Roger;Chang-Hasnain, Connie J.;
12:3:56 Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
DOI:10.1021/nl5036918 JN:NANO LETTERS PY:2015
TC:1 AU: Burgess, Tim;Caroff, Philippe;Wang, Yuda;Badada, Bekele H.;Jackson, Howard E.;Smith, Leigh M.;Guo, Yanan;Tan, Hark Hoe;Jagadish, Chennupati;
12:3:57 Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory
DOI:10.1021/nn504795v JN:ACS NANO PY:2014
TC:7 AU: Hjort, Martin;Lehmann, Sebastian;Knutsson, Johan;Zakharov, Alexei A.;Du, Yaojun A.;Sakong, Sung;Timm, Rainer;Nylund, Gustav;Lundgren, Edvin;Kratzer, Peter;Dick, Kimberly A.;Mikkelsen, Anders;
12:3:58 In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si
DOI:10.1063/1.4824344 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Dimakis, Emmanouil;Ramsteiner, Manfred;Huang, Chang-Ning;Trampert, Achim;Davydok, Anton;Biermanns, Andreas;Pietsch, Ullrich;Riechert, Henning;Geelhaar, Lutz;
12:3:59 Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
DOI:10.1063/1.3638698 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:26 AU: Jacopin, G.;Rigutti, L.;Largeau, L.;Fortuna, F.;Furtmayr, F.;Julien, F. H.;Eickhoff, M.;Tchernycheva, M.;
12:3:60 Magneto-Optical Properties of Wurtzite-Phase InP Nanowires
DOI:10.1021/nl500870e JN:NANO LETTERS PY:2014
TC:2 AU: De Luca, M.;Polimeni, A.;Fonseka, H. A.;Meaney, A. J.;Christianen, P. C. M.;Maan, J. C.;Paiman, S.;Tan, H. H.;Mura, F.;Jagadish, C.;Capizzi, M.;
12:3:61 Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
DOI:10.1021/nl501239h JN:NANO LETTERS PY:2014
TC:9 AU: Gil, Evelyne;Dubrovskii, Vladimir G.;Avit, Geoffrey;Andre, Yamina;Leroux, Christine;Lekhal, Kaddour;Grecenkov, Jurij;Trassoudaine, Agnes;Castelluci, Dominique;Monier, Guillaume;Ramdani, Reda M.;Robert-Goumet, Christine;Bideux, Luc;Harmand, Jean Christophe;Glas, Frank;
12:3:62 Polarized and resonant Raman spectroscopy on single InAs nanowires
DOI:10.1103/PhysRevB.84.085318 JN:PHYSICAL REVIEW B PY:2011
TC:19 AU: Moeller, M.;de Lima, M. M., Jr.;Cantarero, A.;Dacal, L. C. O.;Madureira, J. R.;Iikawa, F.;Chiaramonte, T.;Cotta, M. A.;
12:3:63 Calculation of the diameter-dependent polytypism in GaAs nanowires from an atomic motif expansion of the formation energy
DOI:10.1103/PhysRevB.84.075455 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Pankoke, Volker;Kratzer, Peter;Sakong, Sung;
12:3:64 Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (InGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields
DOI:10.1021/nn405743t JN:ACS NANO PY:2013
TC:4 AU: De Luca, Marta;Polimeni, Antonio;Capizzi, Mario;Meaney, Alan J.;Christianen, Peter C. M.;Maan, Jan Kees;Mura, Francesco;Rubini, Silvia;Martelli, Faustino;
12:3:65 Valence Band Splitting in Wurtzite InGaAs Nanoneedles Studied by Photoluminescence Excitation Spectroscopy
DOI:10.1021/nn504512u JN:ACS NANO PY:2014
TC:2 AU: Wang, Xiaodong;Zardo, Ilaria;Spirkoska, Dance;Yazji, Sara;Ng, Kar Wei;Ko, Wai Son;Chang-Hasnain, Connie J.;Finley, Jonathan J.;Abstreiter, Gerhard;
12:3:66 Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
DOI:10.1063/1.4712562 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Gurwitz, Ron;Tavor, Asa;Karpeles, Liran;Shalish, Ilan;Yi, Wei;Seryogin, Georgiy;Narayanamurti, Venkatesh;
12:3:67 Growth of doped InAsyP1-y nanowires with InP shells
DOI:10.1016/j.jcrysgro.2011.07.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Wallentin, Jesper;Messing, Maria E.;Trygg, Erik;Samuelson, Lars;Deppert, Knut;Borgstrom, Magnus T.;
12:3:68 Interplay between crystal phase purity and radial growth in InP nanowires
DOI:10.1088/0957-4484/23/38/385205 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Poole, P. J.;Dalacu, D.;Wu, X.;Lapointe, J.;Mnaymneh, K.;
12:3:69 Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control
DOI:10.1021/nl101087e JN:NANO LETTERS PY:2010
TC:30 AU: Hoang, Thang Ba;Moses, Anthonysamy F.;Ahtapodov, Lyubomir;Zhou, Hailong;Dheeraj, Dasa L.;van Helvoort, Antonius T. J.;Fimland, Bjorn-Ove;Weman, Helge;
12:3:70 Spontaneous Periodic Diameter Oscillations in InP Nanowires: The Role of Interface Instabilities
DOI:10.1021/nl302891b JN:NANO LETTERS PY:2013
TC:8 AU: Oliveira, D. S.;Tizei, L. H. G.;Ugarte, D.;Cotta, M. A.;
12:3:71 Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111)
DOI:10.1021/nl502878a JN:NANO LETTERS PY:2014
TC:2 AU: Biermanns, Andreas;Dimakis, Emmanouil;Davydok, Anton;Sasaki, Takuo;Geelhaar, Lutz;Takahasi, Masamitu;Pietsch, Ullrich;
12:3:72 Rationally Designed Single-Crystalline Nanowire Networks
DOI:10.1002/adma.201400924 JN:ADVANCED MATERIALS PY:2014
TC:2 AU: Car, Diana;Wang, Jia;Verheijen, Marcel A.;Bakkers, Erik P. A. M.;Plissard, Sebastien R.;
12:3:73 Quenching of the E-2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast
DOI:10.1063/1.4817078 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Ramsteiner, M.;Brandt, O.;Kusch, P.;Breuer, S.;Reich, S.;Geelhaar, L.;
12:3:74 Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires
DOI:10.1063/1.4903482 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Furthmeier, Stephan;Dirnberger, Florian;Hubmann, Joachim;Bauer, Benedikt;Korn, Tobias;Schueller, Christian;Zweck, Josef;Reiger, Elisabeth;Bougeard, Dominique;
12:3:75 Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm
DOI:10.1021/nl4040847 JN:NANO LETTERS PY:2014
TC:11 AU: Pan, Dong;Fu, Mengqi;Yu, Xuezhe;Wang, Xiaolei;Zhu, Lijun;Nie, Shuaihua;Wang, Siliang;Chen, Qing;Xiong, Peng;von Molnar, Stephan;Zhao, Jianhua;
12:3:76 Polytypism of GaAs, InP, InAs, and InSb: An ab initio study
DOI:10.1103/PhysRevB.84.075217 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Panse, Christian;Kriegner, Dominik;Bechstedt, Friedhelm;
12:3:77 Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study
DOI:10.1103/PhysRevB.89.045310 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Kusch, Patryk;Grelich, Eugen;Somaschini, Claudio;Luna, Esperanza;Ramsteiner, Manfred;Geelhaar, Lutz;Riechert, Henning;Reich, Stephanie;
12:3:78 Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
DOI:10.1063/1.3463036 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Perera, S.;Pemasiri, K.;Fickenscher, M. A.;Jackson, H. E.;Smith, L. M.;Yarrison-Rice, J.;Paiman, S.;Gao, Q.;Tan, H. H.;Jagadish, C.;
12:3:79 Position-controlled [100] InP nanowire arrays
DOI:10.1063/1.3679136 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Wang, Jia;Plissard, Sebastien;Hocevar, Moira;Vu, Thuy T. T.;Zehender, Tilman;Immink, George G. W.;Verheijen, Marcel A.;Haverkort, Jos;Bakkers, Erik P. A. M.;
12:3:80 Polarization dependent photocurrent spectroscopy of single wurtzite GaAs/AlGaAs core-shell nanowires
DOI:10.1063/1.4801865 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Kim, D. C.;Dheeraj, D. L.;Fimland, B. O.;Weman, H.;
12:3:81 Optical phonon modes of wurtzite InP
DOI:10.1063/1.4798324 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Gadret, E. G.;de Lima, M. M., Jr.;Madureira, J. R.;Chiaramonte, T.;Cotta, M. A.;Iikawa, F.;Cantarero, A.;
12:3:82 Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE
DOI:10.1016/j.jcrysgro.2014.10.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Ishizaka, Fumiya;Hiraya, Yoshihiro;Tomioka, Katsuhiro;Fukui, Takashi;
12:3:83 Optical emission of InAs nanowires
DOI:10.1088/0957-4484/23/37/375704 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Moeller, M.;de Lima, M. M., Jr.;Cantarero, A.;Chiaramonte, T.;Cotta, M. A.;Iikawa, F.;
12:3:84 High Magnetic Field Reveals the Nature of Excitons in a Single GaAs/AlAs Core/Shell Nanowire
DOI:10.1021/nl400417x JN:NANO LETTERS PY:2013
TC:8 AU: Plochocka, P.;Mitioglu, A. A.;Maude, D. K.;Rikken, G. L. J. A.;del Aguila, A. Granados;Christianen, P. C. M.;Kacman, P.;Shtrikman, Hadas;
12:3:85 As vacancies, Ga antisites, and Au impurities in zinc blende and wurtzite GaAs nanowire segments from first principles
DOI:10.1103/PhysRevB.87.075308 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Du, Yaojun A.;Sakong, Sung;Kratzer, Peter;
12:3:86 Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy
DOI:10.1021/nn202585J JN:ACS NANO PY:2011
TC:64 AU: Ketterer, Bernt;Heiss, Martin;Uccelli, Emanuele;Arbiol, Jordi;Fontcuberta i Morral, Anna;
12:3:87 Nanowires Grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
DOI:10.1021/nn5017428 JN:ACS NANO PY:2014
TC:7 AU: Fonseka, H. Aruni;Caroff, Philippe;Wong-Leung, Jennifer;Ameruddin, Amira S.;Tan, Hark Hoe;Jagadish, Chennupati;
12:3:88 Degenerate p-doping of InP nanowires for large area tunnel diodes
DOI:10.1063/1.3669697 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Wallentin, Jesper;Wickert, Peter;Ek, Martin;Gustafsson, Anders;Wallenberg, L. Reine;Magnusson, Martin H.;Samuelson, Lars;Deppert, Knut;Borgstrom, Magnus T.;
12:3:89 Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study
DOI:10.1063/1.3684837 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Peng, Wang;Jabeen, F.;Jusserand, B.;Harmand, J. C.;Bernard, M.;
12:3:90 Crystal facet effect on structural stability and electronic properties of wurtzite InP nanowires
DOI:10.1063/1.4880742 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yang, Xiaodong;Shu, Haibo;Jin, Mengting;Liang, Pei;Cao, Dan;Li, Can;Chen, Xiaoshuang;
12:3:91 Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening
DOI:10.1021/nl200083f JN:NANO LETTERS PY:2011
TC:14 AU: Chiaramonte, Thalita;Tizei, Luiz H. G.;Ugarte, Daniel;Cotta, Monica A.;
12:3:92 Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
DOI:10.1021/nl502306x JN:NANO LETTERS PY:2014
TC:2 AU: Anttu, Nicklas;Lehmann, Sebastian;Storm, Kristian;Dick, Kimberly A.;Samuelson, Lars;Wu, Phillip M.;Pistol, Mats-Erik;
12:3:93 Metastable Growth of Pure Wurtzite InGaAs Microstructures
DOI:10.1021/nl501887f JN:NANO LETTERS PY:2014
TC:3 AU: Ng, Kar Wei;Ko, Wai Son;Lu, Fanglu;Chang-Hasnain, Connie J.;
12:3:94 Unit cell structure of the wurtzite phase of GaP nanowires: X-ray diffraction studies and density functional theory calculations
DOI:10.1103/PhysRevB.88.115315 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Kriegner, Dominik;Assali, Simone;Belabbes, Abderrezak;Etzelstorfer, Tanja;Holy, Vaclav;Schuelli, Tobias;Bechstedt, Friedhelm;Bakkers, Erik P. A. M.;Bauer, Guenther;Stangl, Julian;
12:3:95 Temperature dependence of stacking faults in catalyst-free GaAs nanopillars
DOI:10.1088/0957-4484/24/47/475601 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Shapiro, Joshua N.;Lin, Andrew;Ratsch, Christian;Huffaker, D. L.;
12:3:96 Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires
DOI:10.1021/nl203900q JN:NANO LETTERS PY:2012
TC:5 AU: Heo, Hoseok;Kang, Kibum;Lee, Donghun;Jin, Li-Hua;Back, Hyeon-Jun;Hwang, Inchan;Kim, Miseong;Lee, Hyun-Seung;Lee, Byeong-Joo;Yi, Gyu-Chul;Cho, Yong-Hoon;Jo, Moon-Ho;
12:3:97 Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies
DOI:10.1021/acs.nanolett.5b01054 JN:NANO LETTERS PY:2015
TC:0 AU: Dobrovolsky, Alexander;Persson, Per O. A.;Sukrittanon, Supanee;Kuang, Yanjin;Tu, Charles W.;Chen, Weimin M.;Buyanova, Irina A.;
12:3:98 First-principles study of the phonon dispersion and dielectric properties of wurtzite InP: Role of In 4d electrons
DOI:10.1103/PhysRevB.89.054302 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Mukhopadhyay, Saikat;Stewart, Derek A.;
12:3:99 Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires
DOI:10.1021/nn1015488 JN:ACS NANO PY:2010
TC:25 AU: Rosini, Marcello;Magri, Rita;
12:3:100 Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
DOI:10.1063/1.3674985 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Chauvin, N.;Alouane, M. H. Hadj;Anufriev, R.;Khmissi, H.;Naji, K.;Patriarche, G.;Bru-Chevallier, C.;Gendry, M.;
12:3:101 Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
DOI:10.1016/j.jcrysgro.2013.09.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:8 AU: Berg, Alexander;Lehmann, Sebastian;Vainorius, Neimantas;Gustafsson, Anders;Pistol, Mats-Erik;Wallenberg, L. Reine;Samuelson, Lars;Borgstrom, Magnus T.;
12:3:102 Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires
DOI:10.1088/0957-4484/22/32/325707 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Todorovic, J.;Moses, A. F.;Karlberg, T.;Olk, P.;Dheeraj, D. L.;Fimland, B. O.;Weman, H.;van Helvoort, A. T. J.;
12:3:103 Native-oxide-based selective area growth of InP nanowires via metal-organic molecular beam epitaxy mediated by surface diffusion
DOI:10.1088/0957-4484/23/24/245603 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Calahorra, Yonatan;Greenberg, Yaakov;Cohen, Shimon;Ritter, Dan;
12:3:104 Paired Twins and {11(2)over-bar} Morphology in GaP Nanowires
DOI:10.1021/nl1000136 JN:NANO LETTERS PY:2010
TC:24 AU: Algra, Rienk E.;Verheijen, Marcel A.;Feiner, Lou-Fe;Immink, George G. W.;Theissmann, Ralf;van Enckevort, Willem J. P.;Vlieg, Elias;Bakkers, Erik P. A. M.;
12:3:105 Fast Growth Synthesis of GaAs Nanowires with Exceptional Length
DOI:10.1021/nl100557d JN:NANO LETTERS PY:2010
TC:23 AU: Ramdani, M. R.;Gil, E.;Leroux, Ch.;Andre, Y.;Trassoudaine, A.;Castelluci, D.;Bideux, L.;Monier, G.;Robert-Goumet, C.;Kupka, R.;
12:3:106 Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
DOI:10.1021/nl202433g JN:NANO LETTERS PY:2011
TC:14 AU: Montazeri, Mohammad;Wade, Aaron;Fickenscher, Melodie;Jackson, Howard E.;Smith, Leigh M.;Yarrison-Rice, Jan M.;Gao, Qian;Tan, H. Hoe;Jagadish, Chennupati;
12:3:107 Direct Observation of Charge-Carrier Heating at WZ-ZB InP Nanowire Heterojunctions
DOI:10.1021/nl402050q JN:NANO LETTERS PY:2013
TC:3 AU: Yong, Chaw Keong;Wong-Leung, Jennifer;Joyce, Hannah J.;Lloyd-Hughes, James;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Johnston, Michael B.;Herz, Laura M.;
12:3:108 Relation between spontaneous polarization and crystal field from first principles
DOI:10.1103/PhysRevB.87.035305 JN:PHYSICAL REVIEW B PY:2013
TC:5 AU: Belabbes, A.;Furthmueller, J.;Bechstedt, F.;
12:3:109 Determination of Polarization-Fields Across Polytype Interfaces in InAs Nanopillars
DOI:10.1002/adma.201304021 JN:ADVANCED MATERIALS PY:2014
TC:2 AU: Li, Luying;Gan, Zhaofeng;McCartney, Martha R.;Liang, Hanshuang;Yu, Hongbin;Yin, Wan-Jian;Yan, Yanfa;Gao, Yihua;Wang, Jianbo;Smith, David J.;
12:3:110 Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires
DOI:10.1063/1.4788925 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Wallentin, Jesper;Borgstrom, Magnus T.;Samuelson, Lars;Ekawa, Mitsuru;Kawaguchi, Kenichi;
12:3:111 Direct detection of spontaneous polarization in wurtzite GaAs nanowires
DOI:10.1063/1.4880209 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Bauer, Benedikt;Hubmann, Joachim;Lohr, Matthias;Reiger, Elisabeth;Bougeard, Dominique;Zweck, Josef;
12:3:112 Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN
DOI:10.1063/1.4749789 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Corfdir, Pierre;Lefebvre, Pierre;
12:3:113 Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy
DOI:10.1016/j.jcrysgro.2013.11.094 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Greenberg, Ya'akov;Kelrich, Alex;Calahorra, Yonatan;Cohen, Shimon;Ritter, Dan;
12:3:114 Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
DOI:10.1088/0957-4484/23/24/245601 JN:NANOTECHNOLOGY PY:2012
TC:15 AU: Jacobsson, D.;Persson, J. M.;Kriegner, D.;Etzelstorfer, T.;Wallentin, J.;Wagner, J. B.;Stangl, J.;Samuelson, L.;Deppert, K.;Borgstrom, M. T.;
12:3:115 High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
DOI:10.1088/0957-4484/24/46/465602 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Fonseka, H. A.;Tan, H. H.;Wong-Leung, J.;Kang, J. H.;Parkinson, P.;Jagadish, C.;
12:3:116 Self-catalyzed MBE grown GaAs/GaAsxSb1-x core-shell nanowires in ZB and WZ crystal structures
DOI:10.1088/0957-4484/24/40/405601 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Ghalamestani, Sepideh Gorji;Munshi, A. Mazid;Dheeraj, Dasa L.;Fimland, Bjorn-Ove;Weman, Helge;Dick, Kimberly A.;
12:3:117 In situ etching for control over axial and radial III-V nanowire growth rates using HBr
DOI:10.1088/0957-4484/25/50/505601 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Berg, Alexander;Mergenthaler, Kilian;Ek, Martin;Pistol, Mats-Erik;Wallenberg, L. Reine;Borgstrom, Magnus T.;
12:3:118 Growth of defect-free GaP nanowires
DOI:10.1088/0957-4484/25/20/205601 JN:NANOTECHNOLOGY PY:2014
TC:8 AU: Husanu, Elena;Ercolani, Daniele;Gemmi, Mauro;Sorba, Lucia;
12:3:119 Band Alignment Tuning in Twin-Plane Superlattices of Semiconductor Nanowires
DOI:10.1021/nl1027099 JN:NANO LETTERS PY:2010
TC:21 AU: Akiyama, Toru;Yamashita, Tomoki;Nakamura, Kohji;Ito, Tomonori;
12:3:120 Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon
DOI:10.1021/nl402145r JN:NANO LETTERS PY:2013
TC:12 AU: Wang, Zhechao;Tian, Bin;Paladugu, Mohanchand;Pantouvaki, Marianna;Le Thomas, Nicolas;Merckling, Clement;Guo, Weiming;Dekoster, Johan;Van Campenhout, Joris;Absil, Philippe;Van Thourhout, Dries;
12:3:121 Carrier Thermalization Dynamics in Single Zincblende and Wurtzite InP Nanowires
DOI:10.1021/nl503747h JN:NANO LETTERS PY:2014
TC:3 AU: Wang, Yuda;Jackson, Howard E.;Smith, Leigh M.;
12:3:122 Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
DOI:10.1103/PhysRevB.89.165423 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Vainorius, Neimantas;Jacobsson, Daniel;Lehmann, Sebastian;Gustafsson, Anders;Dick, Kimberly A.;Samuelson, Lars;Pistol, Mats-Erik;
12:3:123 Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy
DOI:10.1103/PhysRevB.90.085405 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Ponseca, C. S., Jr.;Nemec, H.;Wallentin, J.;Anttu, N.;Beech, J. P.;Iqbal, A.;Borgstrom, M.;Pistol, M. -E.;Samuelson, L.;Yartsev, A.;
12:3:124 Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
DOI:10.1063/1.4729929 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Wallentin, Jesper;Poncela, Laura Barrutia;Jansson, Anna M.;Mergenthaler, Kilian;Ek, Martin;Jacobsson, Daniel;Wallenberg, L. Reine;Deppert, Knut;Samuelson, Lars;Hessman, Dan;Borgstrom, Magnus T.;
12:3:125 Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy
DOI:10.1063/1.4898702 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lu, Zhenyu;Zhang, Zhi;Chen, Pingping;Shi, Suixing;Yao, Luchi;Zhou, Chen;Zhou, Xiaohao;Zou, Jin;Lu, Wei;
12:3:126 Optical dielectric functions of wurtzite III-V semiconductors
DOI:10.1103/PhysRevB.85.125201 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: De, Amrit;Pryor, Craig E.;
12:3:127 Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations
DOI:10.1063/1.4870095 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Akiyama, Toru;Nakamura, Kohji;Ito, Tomonori;Freeman, Arthur J.;
12:3:128 Polytype formation in GaAs/GaP axial nanowire heterostructures
DOI:10.1016/j.jcrysgro.2011.07.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Boulanger, Jonathan P.;LaPierre, Ray R.;
12:3:129 Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence
DOI:10.1016/j.jcrysgro.2010.08.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:12 AU: Bolinsson, Jessica;Mergenthaler, Kilian;Samuelson, Lars;Gustafsson, Anders;
12:3:130 Etching effect of tertiary-butyl chloride during InP-nanowire growth
DOI:10.1016/j.jcrysgro.2014.06.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Tateno, Kouta;Zhang, Guoqiang;Gotoh, Hideki;
12:3:131 Polarized zone-center phonon modes of wurtzite GaAs
DOI:10.1103/PhysRevB.81.233303 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Crankshaw, Shanna;Chuang, Linus C.;Moewe, Michael;Chang-Hasnain, Connie;
12:3:132 Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
DOI:10.1063/1.3692730 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Yang, S.;Kuo, C. C.;Liu, W. -R.;Lin, B. H.;Hsu, H. -C.;Hsu, C. -H.;Hsieh, W. F.;
12:3:133 Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats
DOI:10.1063/1.4803476 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: De Luca, Marta;Polimeni, Antonio;Felici, Marco;Miriametro, Antonio;Capizzi, Mario;Mura, Francesco;Rubini, Silvia;Martelli, Faustino;
12:3:134 Band structure calculations of InP wurtzite/zinc-blende quantum wells
DOI:10.1063/1.4767511 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Faria Junior, P. E.;Sipahi, G. M.;
12:3:135 New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers
DOI:10.1039/c4tc01050g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Falcao, Bruno P.;Leitao, Joaquim P.;Correia, Maria R.;Leitao, Miguel F.;Soares, Maria R.;Moreira, Marcus V. B.;de Oliveira, Alfredo G.;Matinaga, Franklin M.;Gonzalez, Juan C.;
12:3:136 A cathodoluminescence study of the influence of the seed particle preparation method on the optical properties of GaAs nanowires
DOI:10.1088/0957-4484/23/26/265704 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Gustafsson, Anders;Hillerich, Karla;Messing, Maria E.;Storm, Kristian;Dick, Kimberly A.;Deppert, Knut;Bolinsson, Jessica;
12:3:137 Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors
DOI:10.1088/0957-4484/23/13/135201 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Pettersson, Hakan;Zubritskaya, Irina;Ngo Tuan Nghia;Wallentin, Jesper;Borgstrom, Magnus T.;Storm, Kristian;Landin, Lars;Wickert, Peter;Capasso, Federico;Samuelson, Lars;
12:3:138 Hard X-ray Detection Using a Single nm Diameter Nanowire
DOI:10.1021/nl5040545 JN:NANO LETTERS PY:2014
TC:0 AU: Wallentin, Jesper;Osterhoff, Markus;Wilke, Robin N.;Persson, Karl-Magnus;Wernersson, Lars-Erik;Sprung, Michael;Salditt, Tim;
12:3:139 Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions
DOI:10.1103/PhysRevB.84.075478 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Niquet, Yann-Michel;Delerue, Christophe;
12:3:140 Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires
DOI:10.1063/1.4745608 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Anufriev, Roman;Chauvin, Nicolas;Khmissi, Hammadi;Naji, Khalid;Gendry, Michel;Bru-Chevallier, Catherine;
12:3:141 Indium tin oxide and indium phosphide heterojunction nanowire array solar cells
DOI:10.1063/1.4847355 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Yoshimura, Masatoshi;Nakai, Eiji;Tomioka, Katsuhiro;Fukui, Takashi;
12:3:142 Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy
DOI:10.1063/1.4813625 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Panda, Jaya Kumar;Roy, Anushree;Gemmi, Mauro;Husanu, Elena;Li, Ang;Ercolani, Daniele;Sorba, Lucia;
12:3:143 Photoluminescence study of GaAs thin films and nanowires grown on Si(111)
DOI:10.1007/s10853-012-6941-x JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:6 AU: Falcao, B. P.;Leitao, J. P.;Gonzalez, J. C.;Correia, M. R.;Zayas-Bazan, K. G.;Matinaga, F. M.;Moreira, M. B.;Leite, C. F.;de Oliveira, A. G.;
12:3:144 Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions
DOI:10.1088/0957-4484/21/16/165601 JN:NANOTECHNOLOGY PY:2010
TC:23 AU: Fakhr, A.;Haddara, Y. M.;LaPierre, R. R.;
12:3:145 Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
DOI:10.1088/0957-4484/21/10/105711 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Muench, S.;Reitzenstein, S.;Borgstrom, M.;Thelander, C.;Samuelson, L.;Worschech, L.;Forchel, A.;
12:3:146 Crystal phase engineered quantum wells in ZnO nanowires
DOI:10.1088/0957-4484/24/21/215202 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Khranovskyy, V.;Glushenkov, Alexey M.;Chen, Y.;Khalid, A.;Zhang, H.;Hultman, L.;Monemar, B.;Yakimova, R.;
12:3:147 Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles
DOI:10.1088/0957-4484/24/11/115706 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Iqbal, Azhar;Beech, Jason P.;Anttu, Nicklas;Pistol, Mats-Erik;Samuelson, Lars;Borgstrom, Magnus T.;Yartsev, Arkady;
12:3:148 Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements
DOI:10.1021/nl404039d JN:NANO LETTERS PY:2014
TC:6 AU: Heurlin, Magnus;Hultin, Olof;Storm, Kristian;Lindgren, David;Borgstrom, Magnus T.;Samuelson, Lars;
12:3:149 Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires
DOI:10.1021/nl504813e JN:NANO LETTERS PY:2015
TC:0 AU: Conesa-Boj, S.;Hauge, H. I. T.;Verheijen, M. A.;Assali, S.;Li, A.;Bakkers, E. P. A. M.;Fontcuberta i Morral, A.;
12:3:150 Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructures
DOI:10.1021/nl5049127 JN:NANO LETTERS PY:2015
TC:2 AU: Heurlin, Magnus;Stankevic, Tomas;Mickevicius, Simas;Yngman, Sofie;Lindgren, David;Mikkelsen, Anders;Feidenhans'l, Robert;Borgstrom, Magnus T.;Samuelson, Lars;
12:3:151 Theory of light emission polarization reversal in zinc-blende and wurtzite nanowires
DOI:10.1103/PhysRevB.89.035304 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Efros, Al. L.;Lambrecht, W. R. L.;
12:3:152 Planar-defect characteristics and cross-sections of < 001 >, < 111 >, and < 112 > InAs nanowires
DOI:10.1063/1.3592186 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Li, Zi-An;Moeller, Christina;Migunov, Vadim;Spasova, Marina;Farle, Michael;Lysov, Andrey;Gutsche, Christoph;Regolin, Ingo;Prost, Werner;Tegude, Franz-Josef;Ercius, Peter;
12:3:153 Formation of Wurtzite InP Nanowires Explained by Liquid-Ordering
DOI:10.1021/nl1023996 JN:NANO LETTERS PY:2011
TC:6 AU: Algra, Rienk E.;Vonk, Vedran;Wermeille, Didier;Szweryn, Wiesiek J.;Verheijen, Marcel A.;van Enckevort, Willem J. P.;Bode, Arno A. C.;Noorduin, Wim L.;Tancini, Erik;de Jong, Aryan E. F.;Bakkers, Erik P. A. M.;Vlieg, Elias;
12:3:154 Confinement in Thickness-Controlled GaAs Polytype Nanodots
DOI:10.1021/acs.nanolett.5b00253 JN:NANO LETTERS PY:2015
TC:1 AU: Vainorius, Neimantas;Lehmann, Sebastian;Jacobsson, Daniel;Samuelson, Lars;Dick, Kimberly A.;Pistol, Mats-Erik;
12:3:155 Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
DOI:10.1002/smll.201200156 JN:SMALL PY:2012
TC:8 AU: Yong, Chaw Keong;Joyce, Hannah J.;Lloyd-Hughes, James;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;Johnston, Michael B.;Herz, Laura M.;
12:3:156 Structural investigation of GaInP nanowires using X-ray diffraction
DOI:10.1016/j.tsf.2013.02.112 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Kriegner, D.;Persson, J. M.;Etzelstorfer, T.;Jacobsson, D.;Wallentin, J.;Wagner, J. B.;Deppert, K.;Borgstrom, M. T.;Stangl, J.;
12:3:157 Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate
DOI:10.1063/1.4811782 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Naji, K.;Saint-Girons, G.;Penuelas, J.;Patriarche, G.;Largeau, L.;Dumont, H.;Rojo-Romeo, P.;Gendry, M.;
12:3:158 Nanostructural and electronic properties of polytypes in InN nanocolumns
DOI:10.1063/1.4818517 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Kioseoglou, J.;Koukoula, T.;Komninou, Ph;Georgakilas, A.;Androulidaki, M.;Kehagias, Th;
12:3:159 Optical properties of indium phosphide nanowire ensembles at various temperatures
DOI:10.1088/0957-4484/21/35/355702 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Lohn, Andrew J.;Onishi, Takehiro;Kobayashi, Nobuhiko P.;
12:3:160 Three-Dimensional Structure of Twinned and Zigzagged One-Dimensional Nanostructures Using Electron Tomography
DOI:10.1021/nl1000168 JN:NANO LETTERS PY:2010
TC:12 AU: Kim, Han Sung;Myung, Yoon;Cho, Yong Jae;Jang, Dong Myung;Jung, Chan Soo;Park, Jeunghee;Ahn, Jae-Pyoung;
12:3:161 Bidirectional Growth of Indium Phosphide Nanowires
DOI:10.1021/nl302202r JN:NANO LETTERS PY:2012
TC:7 AU: Ikejiri, Keitaro;Ishizaka, Fumiya;Tomioka, Katsuhiro;Fukui, Takashi;
12:3:162 Generalized conductivity model for polar semiconductors at terahertz frequencies
DOI:10.1063/1.3695161 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Lloyd-Hughes, J.;
12:3:163 InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties
DOI:10.1088/0957-4484/21/28/285204 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Moreira, M. Dionizio;Venezuela, P.;Miwa, R. H.;
12:3:164 Fabrication of Dual-Type Nanowire Arrays on a Single Substrate
DOI:10.1021/nl504308x JN:NANO LETTERS PY:2015
TC:0 AU: Kakko, Joona-Pekko P.;Haggren, Tuomas;Dhaka, Veer;Huhtio, Teppo;Peltonen, Antti;Jiang, Hua;Kauppinen, Esko;Lipsanen, Harri;
12:3:165 Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers
DOI:10.1103/PhysRevB.84.094113 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Barchuk, M.;Holy, V.;Kriegner, D.;Stangl, J.;Schwaiger, S.;Scholz, F.;
12:3:166 Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts
DOI:10.1002/adma.201103920 JN:ADVANCED MATERIALS PY:2012
TC:4 AU: Li, Luying;Jin, Lei;Wang, Jianbo;Smith, David J.;Yin, Wan-Jian;Yan, Yanfa;Sang, Hongqian;Choy, Wallace C. H.;McCartney, Martha R.;
12:3:167 Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding
DOI:10.1063/1.4844855 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Sun, Ce;Lu, Ning;Wang, Jinguo;Lee, Jihyung;Peng, Xin;Klie, Robert F.;Kim, Moon J.;
12:3:168 Growth and properties of self-assembled InP-nanoneedles on (001) InP by gas source MBE
DOI:10.1016/j.jcrysgro.2010.10.219 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Chashnikova, M.;Mogilatenko, A.;Fedosenko, O.;Bryksa, V.;Petrov, A.;Machulik, S.;Semtsiv, M. P.;Neumann, W.;Masselink, W. T.;
12:3:169 Effects of growth rate on InP nanowires morphology and crystal structure
DOI:10.1016/j.jcrysgro.2013.08.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Paiman, S.;Gao, Q.;Tan, H. H.;Jagadish, C.;Zhang, X.;Zou, J.;
12:3:170 Characterization of structural defects in highly mismatched GaP nanowires
DOI:10.1016/j.matlet.2013.09.053 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Greenberg, Ya'akov;Remennik, Sergei;Cohen, Shimon;Ritter, Dan;Meshi, Louisa;
12:3:171 Characterization of interface abruptness and material properties in catalytically grown III-V nanowires: exploiting plasmon chemical shift
DOI:10.1088/0957-4484/21/29/295701 JN:NANOTECHNOLOGY PY:2010
TC:2 AU: Tizei, L. H. G.;Chiaramonte, T.;Cotta, M. A.;Ugarte, D.;
12:3:172 Comprehensive control of optical polarization anisotropy in semiconducting nanowires
DOI:10.1063/1.3631630 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Fang, Lei;Zhao, Xianwei;Chiu, Yi-Hsin;Ko, Dongkyun;Reddy, Kongara M.;Lemberger, Thomas R.;Padture, Nitin P.;Yang, Fengyuan;Johnston-Halperin, Ezekiel;
12:3:173 Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
DOI:10.1016/j.jcrysgro.2011.12.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Naji, K.;Dumont, H.;Saint-Girons, G.;Penuelas, J.;Patriarche, G.;Hocevar, M.;Zwiller, V.;Gendry, M.;
12:3:174 Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires (vol 11, pg 4314, 2011)
DOI:10.1021/nl2042886 JN:NANO LETTERS PY:2012
TC:2 AU: Ikejiri, Keitaro;Kitauchi, Yusuke;Tomioka, Katsuhiro;Motohisa, Junichi;Fukui, Takashi;
12:3:175 Predicted band structures of III-V semiconductors in the wurtzite phase (vol 81, 155210, 2010)
DOI:10.1103/PhysRevB.81.199901 JN:PHYSICAL REVIEW B PY:2010
TC:0 AU: De, A.;Pryor, Craig E.;
12:3:176 Predicted band structures of III-V semiconductors in the wurtzite phase (vol 81, 155210, 2010)
DOI:10.1103/PhysRevB.84.239907 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: De, A.;Pryor, Craig E.;
12:3:177 Polarized red and blue light emission from silicon-based nanostructures correlated with crystallographic axes
DOI:10.1103/PhysRevB.83.233303 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Goller, B.;Kovalev, D.;
12:3:178 Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)
DOI:10.1103/PhysRevB.85.239904 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Moeller, M.;de Lima, M. M., Jr.;Cantarero, A.;Dacal, L. C. O.;Madureira, J. R.;Iikawa, F.;Chiaramonte, T.;Cotta, M. A.;
12:3:179 In situ Transmission Electron Microscopy Observations of Sublimation in Silver Nanoparticles
DOI:10.1021/nn402771j JN:ACS NANO PY:2013
TC:10 AU: Asoro, Michael A.;Kovar, Desiderio;Ferreira, Paulo J.;
12:3:180 Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions
DOI:10.1063/1.4889801 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Fakhr, A.;Haddara, Y. M.;
12:4:1 Light Trapping in Solar Cells: Can Periodic Beat Random?
DOI:10.1021/nn300287j JN:ACS NANO PY:2012
TC:194 AU: Battaglia, Corsin;Hsu, Ching-Mei;Soederstroem, Karin;Escarre, Jordi;Haug, Franz-Josef;Charriere, Mathieu;Boccard, Mathieu;Despeisse, Matthieu;Alexander, Duncan T. L.;Cantoni, Marco;Cui, Yi;Ballif, Christophe;
12:4:2 Optimized Spatial Correlations for Broadband Light Trapping Nanopatterns in High Efficiency Ultrathin Film a-Si:H Solar Cells
DOI:10.1021/nl202226r JN:NANO LETTERS PY:2011
TC:167 AU: Ferry, Vivian E.;Verschuuren, Marc A.;van Lare, M. Claire;Schropp, Ruud E. I.;Atwater, Harry A.;Polman, Albert;
12:4:3 High-Efficiency Amorphous Silicon Solar Cell on a Periodic Nanocone Back Reflector
DOI:10.1002/aenm.201100514 JN:ADVANCED ENERGY MATERIALS PY:2012
TC:93 AU: Hsu, Ching-Mei;Battaglia, Corsin;Pahud, Celine;Ruan, Zhichao;Haug, Franz-Josef;Fan, Shanhui;Ballif, Christophe;Cui, Yi;
12:4:4 Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells
DOI:10.1021/nl1037787 JN:NANO LETTERS PY:2011
TC:93 AU: Battaglia, Corsin;Escarre, Jordi;Soederstroem, Karin;Erni, Lukas;Ding, Laura;Bugnon, Gregory;Billet, Adrian;Boccard, Mathieu;Barraud, Loris;De Wolf, Stefaan;Haug, Franz-Josef;Despeisse, Matthieu;Ballif, Christophe;
12:4:5 Plasmonic Light Trapping in Thin-film Silicon Solar Cells with Improved Self-Assembled Silver Nanoparticles
DOI:10.1021/nl301521z JN:NANO LETTERS PY:2012
TC:120 AU: Tan, Hairen;Santbergen, Rudi;Smets, Arno H. M.;Zeman, Miro;
12:4:6 Multiscale Transparent Electrode Architecture for Efficient Light Management and Carrier Collection in Solar Cells
DOI:10.1021/nl203909u JN:NANO LETTERS PY:2012
TC:69 AU: Boccard, Mathieu;Battaglia, Corsin;Haenni, Simon;Soederstroem, Karin;Escarre, Jordi;Nicolay, Sylvain;Meillaud, Fanny;Despeisse, Matthieu;Ballif, Christophe;
12:4:7 Design of Nanostructured Solar Cells Using Coupled Optical and Electrical Modeling
DOI:10.1021/nl300483y JN:NANO LETTERS PY:2012
TC:86 AU: Deceglie, Michael G.;Ferry, Vivian E.;Alivisatos, A. Paul;Atwater, Harry A.;
12:4:8 Nanophotonic light trapping in solar cells
DOI:10.1063/1.4747795 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:65 AU: Mokkapati, S.;Catchpole, K. R.;
12:4:9 Modelling of thin-film silicon solar cells
DOI:10.1016/j.solmat.2013.05.037 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:28 AU: Zeman, M.;Isabella, O.;Solntsev, S.;Jager, K.;
12:4:10 A New View of Microcrystalline Silicon: The Role of Plasma Processing in Achieving a Dense and Stable Absorber Material for Photovoltaic Applications
DOI:10.1002/adfm.201200299 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:43 AU: Bugnon, Gregory;Parascandolo, Gaetano;Soederstroem, Thomas;Cuony, Peter;Despeisse, Matthieu;Haenni, Simon;Holovsky, Jakub;Meillaud, Fanny;Ballif, Christophe;
12:4:11 A photonic-plasmonic structure for enhancing light absorption in thin film solar cells
DOI:10.1063/1.3641469 JN:APPLIED PHYSICS LETTERS PY:2011
TC:41 AU: Bhattacharya, Joydeep;Chakravarty, Nayan;Pattnaik, Sambit;Slafer, W. Dennis;Biswas, Rana;Dalal, Vikram L.;
12:4:12 Modeling of light scattering from micro- and nanotextured surfaces
DOI:10.1063/1.3295902 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:66 AU: Domine, D.;Haug, F. -J.;Battaglia, C.;Ballif, C.;
12:4:13 Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells
DOI:10.1063/1.3517492 JN:APPLIED PHYSICS LETTERS PY:2010
TC:41 AU: Cuony, P.;Marending, M.;Alexander, D. T. L.;Boccard, M.;Bugnon, G.;Despeisse, M.;Ballif, C.;
12:4:14 Relationship between the cell thickness and the optimum period of textured back reflectors in thin-film microcrystalline silicon solar cells
DOI:10.1063/1.4790642 JN:APPLIED PHYSICS LETTERS PY:2013
TC:35 AU: Sai, Hitoshi;Saito, Kimihiko;Hozuki, Nana;Kondo, Michio;
12:4:15 Self-Patterned Nanoparticle Layers for Vertical Interconnects: Application in Tandem Solar Cells
DOI:10.1021/nl501774u JN:NANO LETTERS PY:2014
TC:3 AU: Niesen, Bjoern;Blondiaux, Nicolas;Boccard, Mathieu;Stuckelberger, Michael;Pugin, Raphael;Scolan, Emmanuel;Meillaud, Fanny;Haug, Franz-Josef;Hessler-Wyser, Aicha;Ballif, Christophe;
12:4:16 Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler
DOI:10.1063/1.3435481 JN:APPLIED PHYSICS LETTERS PY:2010
TC:56 AU: Soederstroem, Karin;Haug, Franz-Josef;Escarre, Jordi;Cubero, Oscar;Ballif, Christophe;
12:4:17 Innovative dual function nc-SiOx:H layer leading to a > 16% efficient multi-junction thin-film silicon solar cell
DOI:10.1063/1.3638068 JN:APPLIED PHYSICS LETTERS PY:2011
TC:64 AU: Yan, Baojie;Yue, Guozhen;Sivec, Laura;Yang, Jeffrey;Guha, Subhendu;Jiang, Chun-Sheng;
12:4:18 New progress in the fabrication of n-i-p micromorph solar cells for opaque substrates
DOI:10.1016/j.solmat.2013.02.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:18 AU: Biron, Remi;Haenni, Simon;Boccard, Mathieu;Pahud, Celine;Soederstroem, Karin;Duchamp, Martial;Dunin-Borkowski, Rafal;Bugnon, Gregory;Ding, Laura;Nicolay, Sylvain;Parascandolo, Gaetano;Meillaud, Fanny;Despeisse, Matthieu;Haug, Franz-Josef;Ballif, Christophe;
12:4:19 Plasmonic reflection grating back contacts for microcrystalline silicon solar cells
DOI:10.1063/1.3657513 JN:APPLIED PHYSICS LETTERS PY:2011
TC:54 AU: Paetzold, U. W.;Moulin, E.;Michaelis, D.;Boettler, W.;Waechter, C.;Hagemann, V.;Meier, M.;Carius, R.;Rau, U.;
12:4:20 Impact of front and rear texture of thin-film microcrystalline silicon solar cells on their light trapping properties
DOI:10.1063/1.3467968 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:59 AU: Sai, Hitoshi;Jia, Haijun;Kondo, Michio;
12:4:21 Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate
DOI:10.1063/1.4768272 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:19 AU: Soederstroem, Karin;Bugnon, Gregory;Biron, Remi;Pahud, Celine;Meillaud, Fanny;Haug, Franz-Josef;Ballif, Christophe;
12:4:22 Light trapping and electrical transport in thin-film solar cells with randomly rough textures
DOI:10.1063/1.4876223 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kowalczewski, Piotr;Bozzola, Angelo;Liscidini, Marco;Andreani, Lucio Claudio;
12:4:23 Potential of thin-film silicon solar cells by using high haze TCO superstrates
DOI:10.1016/j.tsf.2009.09.164 JN:THIN SOLID FILMS PY:2010
TC:46 AU: Krc, J.;Lipovsek, B.;Bokalic, M.;Campa, A.;Oyama, T.;Kambe, M.;Matsui, T.;Sai, H.;Kondo, M.;Topic, M.;
12:4:24 Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics
DOI:10.1002/adma.201104578 JN:ADVANCED MATERIALS PY:2012
TC:46 AU: Cuony, Peter;Alexander, Duncan T. L.;Perez-Wurfl, Ivan;Despeisse, Matthieu;Bugnon, Gregory;Boccard, Mathieu;Soederstroem, Thomas;Hessler-Wyser, Aicha;Hebert, Cecile;Ballif, Christophe;
12:4:25 Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate
DOI:10.1063/1.3324704 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: Despeisse, M.;Bugnon, G.;Feltrin, A.;Stueckelberger, M.;Cuony, P.;Meillaud, F.;Billet, A.;Ballif, C.;
12:4:26 Nanorod solar cell with an ultrathin a-Si:H absorber layer
DOI:10.1063/1.3567527 JN:APPLIED PHYSICS LETTERS PY:2011
TC:33 AU: Kuang, Yinghuan;van der Werf, Karine H. M.;Houweling, Z. Silvester;Schropp, Ruud E. I.;
12:4:27 Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells
DOI:10.1063/1.4826639 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Tan, Hairen;Psomadaki, Efthymia;Isabella, Olindo;Fischer, Marinus;Babal, Pavel;Vasudevan, Ravi;Zeman, Miro;Smets, Arno H. M.;
12:4:28 Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations
DOI:10.1063/1.4867008 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:16 AU: Bozzola, A.;Kowalczewski, P.;Andreani, L. C.;
12:4:29 Resonances and absorption enhancement in thin film silicon solar cells with periodic interface texture
DOI:10.1063/1.3569689 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:37 AU: Haug, F. -J.;Soederstroem, K.;Naqavi, A.;Ballif, C.;
12:4:30 A hybrid resist hemispherical-pit array layer for Light trapping in thin film silicon solar cells via UV nanoimprint lithography
DOI:10.1039/c4tc00605d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Wangyang, Peihua;Gan, Yanchang;Wang, Qingkang;Jiang, Xuesong;
12:4:31 Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential
DOI:10.1063/1.3583377 JN:APPLIED PHYSICS LETTERS PY:2011
TC:38 AU: Vanecek, Milan;Babchenko, Oleg;Purkrt, Adam;Holovsky, Jakub;Neykova, Neda;Poruba, Ales;Remes, Zdenek;Meier, Johannes;Kroll, Ulrich;
12:4:32 Disorder improves nanophotonic light trapping in thin-film solar cells
DOI:10.1063/1.4869289 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Paetzold, U. W.;Smeets, M.;Meier, M.;Bittkau, K.;Merdzhanova, T.;Smirnov, V.;Michaelis, D.;Waechter, C.;Carius, R.;Rau, U.;
12:4:33 Thermodynamic limit to photonic-plasmonic light-trapping in thin films on metals
DOI:10.1063/1.3658848 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:31 AU: Schiff, E. A.;
12:4:34 Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes
DOI:10.1063/1.3592885 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Battaglia, Corsin;Erni, Lukas;Boccard, Mathieu;Barraud, Loris;Escarre, Jordi;Soederstroem, Karin;Bugnon, Gregory;Billet, Adrian;Ding, Laura;Despeisse, Matthieu;Haug, Franz-Josef;De Wolf, Stefaan;Ballif, Christophe;
12:4:35 Light trapping in solar cells: When does a Lambertian scatterer scatter Lambertianly?
DOI:10.1063/1.4761988 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Battaglia, Corsin;Boccard, Mathieu;Haug, Franz-Josef;Ballif, Christophe;
12:4:36 Nanoscale Observation of Waveguide Modes Enhancing the Efficiency of Solar Cells
DOI:10.1021/nl503249n JN:NANO LETTERS PY:2014
TC:0 AU: Paetzold, Ulrich W.;Lehnen, Stephan;Bittkau, Karsten;Rau, Uwe;Carius, Reinhard;
12:4:37 Influence of interface morphologies on amorphous silicon thin film solar cells prepared on randomly textured substrates
DOI:10.1016/j.solmat.2013.01.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:29 AU: Jovanov, V.;Xu, X.;Shrestha, S.;Schulte, M.;Huepkes, J.;Zeman, M.;Knipp, D.;
12:4:38 Efficient light management scheme for thin film silicon solar cells via transparent random nanostructures fabricated by nanoimprinting
DOI:10.1063/1.3432739 JN:APPLIED PHYSICS LETTERS PY:2010
TC:33 AU: Battaglia, Corsin;Soederstroem, Karin;Escarre, Jordi;Haug, Franz-Josef;Domine, Didier;Cuony, Peter;Boccard, Mathieu;Bugnon, Gregory;Denizot, Celine;Despeisse, Matthieu;Feltrin, Andrea;Ballif, Christophe;
12:4:39 A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells
DOI:10.1063/1.4704372 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:34 AU: Jager, K.;Fischer, M.;van Swaaij, R. A. C. M. M.;Zeman, M.;
12:4:40 Conductive white back reflector and scatter based on ZnO nanostructure arrays for harvesting solar energy
DOI:10.1016/j.nanoen.2012.09.010 JN:NANO ENERGY PY:2012
TC:3 AU: Jia, Zhinan;Zhang, Xiaodan;Liu, Yang;Ma, Jun;Liu, Caichi;Zhao, Ying;
12:4:41 Characterization and simulation of a-Si:H/mu c-Si:H tandem solar cells
DOI:10.1016/j.solmat.2011.07.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:38 AU: Ding, Kaining;Kirchartz, Thomas;Pieters, Bart E.;Ulbrich, Carolin;Ermes, Alexander M.;Schicho, Sandra;Lambertz, Andreas;Carius, Reinhard;Rau, Uwe;
12:4:42 Control of LPCVD ZnO growth modes for improved light trapping in thin film silicon solar cells
DOI:10.1016/j.solmat.2010.11.005 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:27 AU: Nicolay, S.;Despeisse, M.;Haug, F. -J.;Ballif, C.;
12:4:43 Modulated surface textures for enhanced light trapping in thin-film silicon solar cells
DOI:10.1063/1.3488023 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Isabella, Olindo;Krc, Janez;Zeman, Miro;
12:4:44 Silicon oxide based n-doped layer for improved performance of thin film silicon solar cells
DOI:10.1063/1.3463457 JN:APPLIED PHYSICS LETTERS PY:2010
TC:32 AU: Veneri, Paola Delli;Mercaldo, Lucia V.;Usatii, Iurie;
12:4:45 Flattened light-scattering substrate in thin film silicon solar cells for improved infrared response
DOI:10.1063/1.3565249 JN:APPLIED PHYSICS LETTERS PY:2011
TC:27 AU: Sai, Hitoshi;Kanamori, Yoshiaki;Kondo, Michio;
12:4:46 Achievements and challenges in thin film silicon module production
DOI:10.1016/j.solmat.2013.06.043 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:14 AU: Stannowski, B.;Gabriel, O.;Calnan, S.;Frijnts, T.;Heidelberg, A.;Neubert, S.;Kirner, S.;Ring, S.;Zelt, M.;Rau, B.;Zollondz, J. -H.;Bloess, H.;Schlatmann, R.;Rech, B.;
12:4:47 Broadband near-field effects for improved thin film Si solar cells on randomly textured substrates
DOI:10.1016/j.solmat.2013.01.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Mercaldo, Lucia V.;Veneri, Paola Delli;Usatii, Iurie;Polichetti, Tiziana;
12:4:48 Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells
DOI:10.1063/1.4818621 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Huang, Wen-Hsien;Shieh, Jia-Min;Pan, Fu-Ming;Shen, Chang-Hong;Huang, Jung Y.;Wu, Tsung-Ta;Kao, Ming-Hsuan;Hsiao, Tzu-Hsuan;Yu, Peichen;Kuo, Hao-Chung;Lee, Ching-Ting;
12:4:49 Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling
DOI:10.1063/1.4893025 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hsiao, Hui-Hsin;Chang, Hung-Chun;Wu, Yuh-Renn;
12:4:50 Cost-effective nanostructured thin-film solar cell with enhanced absorption
DOI:10.1063/1.4901167 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Peng Hui;Nowak, Regina-Elisabeth;Geissendoerfer, Stefan;Vehse, Martin;Reininghaus, Nies;Sergeev, Oleg;von Maydell, Karsten;Brolo, Alexandre G.;Agert, Carsten;
12:4:51 Post-deposition treatment of microcrystalline silicon solar cells for improved performance on rough superstrates
DOI:10.1063/1.4904088 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Haenni, Simon;Ding, Laura;Bugnon, Gregory;Boccard, Mathieu;Nicolay, Sylvain;Meillaud, Fanny;Ballif, Christophe;
12:4:52 Properties of mixed phase n-doped silicon oxide layers and application in micromorph solar cells
DOI:10.1016/j.solmat.2013.05.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:8 AU: Mercaldo, Lucia V.;Veneri, Paola Delli;Usatii, Iurie;Esposito, Emilia M.;Nicotra, Giuseppe;
12:4:53 Microcrystalline silicon-oxygen alloys for application in silicon solar cells and modules
DOI:10.1016/j.solmat.2013.05.053 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:32 AU: Lambertz, A.;Smirnov, V.;Merdzhanova, T.;Ding, K.;Haas, S.;Jost, G.;Schropp, R. E. I.;Finger, F.;Rau, U.;
12:4:54 Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres
DOI:10.1021/nn203536x JN:ACS NANO PY:2012
TC:28 AU: Kim, Jeehwan;Hong, Augustin J.;Nah, Jae-Woong;Shin, Byungha;Ross, Frances M.;Sadana, Devendra K.;
12:4:55 Enhanced photocurrent and conversion efficiency in thin-film microcrystalline silicon solar cells using periodically textured back reflectors with hexagonal dimple arrays
DOI:10.1063/1.4761956 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Sai, Hitoshi;Saito, Kimihiko;Kondo, Michio;
12:4:56 Nanopyramid Structure for Ultrathin c-Si Tandem Solar Cells
DOI:10.1021/nl500366c JN:NANO LETTERS PY:2014
TC:8 AU: Li, Guijun;Li, He;Ho, Jacob Y. L.;Wong, Man;Kwok, Hoi Sing;
12:4:57 Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells
DOI:10.1016/j.solmat.2010.04.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:46 AU: Hongsingthong, Aswin;Yunaz, Ihsanul Afdi;Miyajima, Shinsuke;Konagai, Makoto;
12:4:58 Thin-film silicon-based quadruple junction solar cells approaching 20% conversion efficiency
DOI:10.1016/j.solmat.2014.03.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:9 AU: Isabella, Olindo;Smets, Arno Hendrikus Marie;Zeman, Miro;
12:4:59 Nano-photonic and nano-plasmonic enhancements in thin film silicon solar cells
DOI:10.1016/j.solmat.2014.05.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:5 AU: Pattnaik, S.;Chakravarty, N.;Biswas, R.;Dalal, V.;Slater, D.;
12:4:60 Three-Dimensional Photonic Crystal Intermediate Reflectors for Enhanced Light-Trapping in Tandem Solar Cells
DOI:10.1002/adma.201101419 JN:ADVANCED MATERIALS PY:2011
TC:29 AU: Uepping, Johannes;Bielawny, Andreas;Wehrspohn, Ralf B.;Beckers, Thomas;Carius, Reinhard;Rau, Uwe;Fahr, Stefan;Rockstuhl, Carsten;Lederer, Falk;Kroll, Matthias;Pertsch, Thomas;Steidl, Lorenz;Zentel, Rudolf;
12:4:61 Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography
DOI:10.1063/1.4749810 JN:APPLIED PHYSICS LETTERS PY:2012
TC:25 AU: Trompoukis, Christos;El Daif, Ounsi;Depauw, Valerie;Gordon, Ivan;Poortmans, Jef;
12:4:62 Light trapping in solar cells: Analytical modeling
DOI:10.1063/1.4758295 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Boccard, Mathieu;Battaglia, Corsin;Haug, Franz-Josef;Despeisse, Matthieu;Ballif, Christophe;
12:4:63 Improved light trapping in microcrystalline silicon solar cells by plasmonic back reflector with broad angular scattering and low parasitic absorption
DOI:10.1063/1.4802451 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Tan, Hairen;Sivec, Laura;Yan, Baojie;Santbergen, Rudi;Zeman, Miro;Smets, Arno H. M.;
12:4:64 Self-assembled silver nanoparticles for plasmon-enhanced solar cell back reflectors: correlation between structural and optical properties
DOI:10.1088/0957-4484/24/26/265601 JN:NANOTECHNOLOGY PY:2013
TC:24 AU: Morawiec, Seweryn;Mendes, Manuel J.;Mirabella, Salvatore;Simone, Francesca;Priolo, Francesco;Crupi, Isodiana;
12:4:65 Enhanced nanocrystalline silicon solar cell with a photonic crystal back-reflector
DOI:10.1016/j.solmat.2010.08.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:31 AU: Biswas, R.;Bhattacharya, J.;Lewis, B.;Chakravarty, N.;Dalal, V.;
12:4:66 Nanoimprint patterning for tunable light trapping in large-area silicon solar cells
DOI:10.1016/j.solmat.2011.06.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:19 AU: Bessonov, Aleksander;Cho, Youngtae;Jung, Seung-Jae;Park, Eun-Ah;Hwang, Eun-Soo;Lee, Jong-Woo;Shin, Myunghun;Lee, Sukwon;
12:4:67 Backreflector morphology effects and thermodynamic light-trapping in thin-film silicon solar cells
DOI:10.1016/j.solmat.2014.04.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Zhao, H.;Ozturk, B.;Schiff, E. A.;Sivec, L.;Yan, B.;Yang, J.;Guha, S.;
12:4:68 Investigation of H-2/CH4 mixed gas plasma post-etching process for ZnO: B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells
DOI:10.1016/j.apsusc.2014.07.181 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Wang, Li;Zhang, Xiaodan;Zhao, Ying;Yamada, Takuto;Naito, Yusuke;
12:4:69 Hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase and usage as an intermediate reflector in thin-film silicon solar cells
DOI:10.1063/1.3592208 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:46 AU: Lambertz, A.;Grundler, T.;Finger, F.;
12:4:70 Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells
DOI:10.1021/nl5045583 JN:NANO LETTERS PY:2015
TC:0 AU: van Lare, Claire;Lenzmann, Frank;Verschuuren, Marc A.;Polman, Albert;
12:4:71 Extremely thin absorber layer solar cells on zinc oxide nanorods by chemical spray
DOI:10.1016/j.solmat.2010.02.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:50 AU: Krunks, M.;Karber, E.;Katerski, A.;Otto, K.;Acik, I. Oja;Dedova, T.;Mere, A.;
12:4:72 High fidelity transfer of nanometric random textures by UV embossing for thin film solar cells applications
DOI:10.1016/j.solmat.2010.11.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:34 AU: Escarre, Jordi;Soederstroem, Karin;Battaglia, Corsin;Haug, Franz-Josef;Ballif, Christophe;
12:4:73 Experimental study of flat light-scattering substrates in thin-film silicon solar cells
DOI:10.1016/j.solmat.2012.02.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:18 AU: Soederstroem, K.;Bugnon, G.;Haug, F. -J.;Nicolay, S.;Ballif, C.;
12:4:74 Geometric light trapping for high efficiency thin film silicon solar cells
DOI:10.1016/j.solmat.2011.10.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:30 AU: Escarre, Jordi;Soederstroem, Karin;Despeisse, Matthieu;Nicolay, Sylvain;Battaglia, Corsin;Bugnon, Gregory;Ding, Laura;Meillaud, Fanny;Haug, Franz-Josef;Ballif, Christophe;
12:4:75 Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology
DOI:10.1016/j.solmat.2013.04.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:58 AU: Kim, Soohyun;Chung, Jin-Won;Lee, Hyun;Park, Jinhee;Heo, Younho;Lee, Heon-Min;
12:4:76 Effective light trapping in thin film silicon solar cells from textured Al doped ZnO substrates with broad surface feature distributions
DOI:10.1063/1.4731775 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Wang, Yanfeng;Zhang, Xiaodan;Bai, Lisha;Huang, Qian;Wei, Changchun;Zhao, Ying;
12:4:77 A path to implement optimized randomly textured surfaces for solar cells
DOI:10.1063/1.4823554 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Wiesendanger, S.;Zilk, M.;Pertsch, T.;Lederer, F.;Rockstuhl, C.;
12:4:78 The growth of microcrystalline silicon oxide thin films studied by in situ plasma diagnostics
DOI:10.1063/1.4790279 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Kirner, S.;Gabriel, O.;Stannowski, B.;Rech, B.;Schlatmann, R.;
12:4:79 Light trapping in thin-film solar cells measured by Raman spectroscopy
DOI:10.1063/1.4895931 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Ledinsky, M.;Moulin, E.;Bugnon, G.;Ganzerova, K.;Vetushka, A.;Meillaud, F.;Fejfar, A.;Ballif, C.;
12:4:80 Diffraction and absorption enhancement from textured back reflectors of thin film solar cells
DOI:10.1063/1.4737606 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Haug, F. -J.;Naqavi, A.;Ballif, C.;
12:4:81 Light trapping efficiency of periodic and quasiperiodic back-reflectors for thin film solar cells: A comparative study
DOI:10.1063/1.4817914 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Micco, A.;Ricciardi, A.;Pisco, M.;La Ferrara, V.;Mercaldo, L. V.;Veneri, P. Delli;Cutolo, A.;Cusano, A.;
12:4:82 Light-induced V-oc increase and decrease in high-efficiency amorphous silicon solar cells
DOI:10.1063/1.4894457 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Stuckelberger, M.;Riesen, Y.;Despeisse, M.;Schuettauf, J. -W.;Haug, F. -J.;Ballif, C.;
12:4:83 Coupled optical and electrical modeling of thin-film amorphous silicon solar cells based on nanodent plasmonic substrates
DOI:10.1016/j.nanoen.2014.05.021 JN:NANO ENERGY PY:2014
TC:7 AU: Guo, Ruichao;Huang, Hongtao;Chang, Paichun;Lu, Linfeng;Chen, Xiaoyuan;Yang, Xiaofei;Fan, Zhiyong;Zhu, Benpeng;Li, Dongdong;
12:4:84 Substrate dependent stability and interplay between optical and electrical properties in mu c-Si: H single junction solar cells
DOI:10.1016/j.solmat.2010.04.043 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:21 AU: Boccard, M.;Cuony, P.;Despeisse, M.;Domine, D.;Feltrin, A.;Wyrsch, N.;Ballif, C.;
12:4:85 Correlation of texture of Ag/ZnO back reflector and photocurrent in hydrogenated nanocrystalline silicon solar cells
DOI:10.1016/j.solmat.2012.04.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:23 AU: Yan, Baojie;Yue, Guozhen;Sivec, Laura;Owens-Mawson, Jessica;Yang, Jeffrey;Guha, Subhendu;
12:4:86 Highly transparent ZnO bilayers by LP-MOCVD as front electrodes for thin-film micromorph silicon solar cells
DOI:10.1016/j.solmat.2011.11.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:23 AU: Ding, L.;Boccard, M.;Bugnon, G.;Benkhaira, M.;Nicolay, S.;Despeisse, M.;Meillaud, F.;Ballif, C.;
12:4:87 Micromorph silicon solar cell optical performance: Influence of intermediate reflector and front electrode surface texture
DOI:10.1016/j.solmat.2014.07.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Campa, A.;Meier, M.;Boccard, M.;Mercaldo, L. V.;Ghosh, M.;Zhang, C.;Merdzhanova, T.;Krc, J.;Haug, F. -J.;Topic, M.;
12:4:88 Influence of deposition conditions and substrate morphology on the electrical properties of sputtered ZnO: Al grown on texture-etched glass
DOI:10.1016/j.tsf.2014.07.045 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Sommer, Nicolas;Goetzendoerfer, Stefan;Koehler, Florian;Ziegner, Mirko;Huepkes, Juergen;
12:4:89 Light trapping beyond the 4n(2) limit in thin waveguides
DOI:10.1063/1.3695156 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Munday, Jeremy N.;Callahan, Dennis M.;Atwater, Harry A.;
12:4:90 Flexible micromorph tandem a-Si/mu c-Si solar cells
DOI:10.1063/1.3275860 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:33 AU: Soederstroem, T.;Haug, F-J;Terrazzoni-Daudrix, V.;Ballif, C.;
12:4:91 Optical enhancement and losses of pyramid textured thin-film silicon solar cells
DOI:10.1063/1.3602092 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:25 AU: Dewan, Rahul;Vasilev, Ivaylo;Jovanov, Vladislav;Knipp, Dietmar;
12:4:92 Scalar scattering model of highly textured transparent conducting oxide
DOI:10.1063/1.3530684 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Lin, Chien-Chung;Liu, Wei-Lin;Hsieh, Chi-Ying;
12:4:93 A numerical scheme to quantify the texture characteristics of sputtered aluminum thin film back reflectors
DOI:10.1063/1.4824806 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Adhikari, Sushil;Dubey, Mukul;Galipeau, David;Fan, Qi Hua;
12:4:94 Single and multilayered a-SiOx:H (x < 1) thin film samples analyzed by optical absorption and small-angle X-ray scattering
DOI:10.1016/j.matchemphys.2014.03.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Bacioglu, Akin;Kazan, Ural;Ide, Semra;
12:4:95 Anti-reflective microcrystalline silicon oxide p-layer for thin-film silicon solar cells on ZnO
DOI:10.1016/j.solmat.2012.06.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:20 AU: Schwanitz, Konrad;Klein, Stefan;Stolley, Tobias;Rohde, Martin;Severin, Daniel;Trassl, Roland;
12:4:96 High efficiency multi-junction thin film silicon cells incorporating nanocrystalline silicon
DOI:10.1016/j.solmat.2013.03.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:30 AU: Guha, Subhendu;Yang, Jeffrey;Yan, Baojie;
12:4:97 Combined model of non-conformal layer growth for accurate optical simulation of thin-film silicon solar cells
DOI:10.1016/j.solmat.2013.05.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:20 AU: Sever, Martin;Lipovsek, Benjamin;Krc, Janez;Campa, Andrej;Sanchez Plaza, Guillermo;Haug, Franz-Josef;Duchamp, Martial;Soppe, Wim;Topic, Marko;
12:4:98 Prediction of defective regions in optimisation of surface textures in thin-film silicon solar cells using combined model of layer growth
DOI:10.1016/j.tsf.2014.11.053 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Sever, Martin;Krc, Janez;Topic, Marko;
12:4:99 Plasma enhanced chemical vapor deposition process optimization for thin film silicon tandem junction solar cells
DOI:10.1016/j.tsf.2014.03.008 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Rohde, Martin;Zelt, Matthias;Gabriel, Onno;Neubert, Sebastian;Kirner, Simon;Severin, Daniel;Stolley, Tobias;Rau, Bjoern;Stannowski, Bernd;Schlatmann, Rutger;
12:4:100 Relaxing the Conductivity/Transparency Trade-Off in MOCVD ZnO Thin Films by Hydrogen Plasma
DOI:10.1002/adfm.201203541 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:15 AU: Ding, Laura;Nicolay, Sylvain;Steinhauser, Jerome;Kroll, Ulrich;Ballif, Christophe;
12:4:101 9.4% Efficient Amorphous Silicon Solar Cell on High Aspect-Ratio Glass Microcones
DOI:10.1002/adma.201400186 JN:ADVANCED MATERIALS PY:2014
TC:4 AU: Kim, Jeehwan;Battaglia, Corsin;Charriere, Mathieu;Hong, Augustin;Jung, Wooshik;Park, Hongsik;Ballif, Christophe;Sadana, Devendra;
12:4:102 Angular resolved scattering by a nano-textured ZnO/silicon interface
DOI:10.1063/1.3640238 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Schulte, M.;Bittkau, K.;Jager, K.;Ermes, M.;Zeman, M.;Pieters, B. E.;
12:4:103 Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage
DOI:10.1063/1.4892890 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Si, Fai Tong;Kim, Do Yun;Santbergen, Rudi;Tan, Hairen;van Swaaij, Rene A. C. M. M.;Smets, Arno H. M.;Isabella, Olindo;Zeman, Miro;
12:4:104 Predicting the Interface Morphologies of Silicon Films on Arbitrary Substrates: Application in Solar Cells
DOI:10.1021/am401434y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:8 AU: Jovanov, Vladislav;Xu, Xu;Shrestha, Shailesh;Schulte, Melanie;Huepkes, Juergen;Knipp, Dietmar;
12:4:105 Influence of the absorber layer thickness and rod length on the performance of three-dimensional nanorods thin film hydrogenated amorphous silicon solar cells
DOI:10.1063/1.4803045 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Ho, Chung-I;Liang, Wei-Chieh;Yeh, Dan-Ju;Su, Vin-Cent;Yang, Po-Chuan;Chen, Shih-Yen;Yang, Tsai-Ting;Lee, Jeng-Han;Kuan, Chieh-Hsiung;Cheng, I-Chun;Lee, Si-Chen;
12:4:106 Periodically textured metal electrodes: large-area fabrication, characterization, simulation, and application as efficient back-reflective scattering contact-electrodes for thin-film solar cells
DOI:10.1039/c4ta02445a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:0 AU: Liang, Xuejiao;Liu, Bofei;Bai, Lisha;Liang, Junhui;Gao, Haibo;Zhao, Ying;Zhang, Xiaodan;
12:4:107 Enhancement of solar cells with photonic and plasmonic crystals - overcoming the Lambertian limit
DOI:10.1557/jmr.2013.41 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Biswas, Rana;Pattnaik, Sambit;Xu, Chun;Bhattacharya, Joydeep;Chakravarty, Nayan;Dalal, Vikram;
12:4:108 Photonic and plasmonic crystal based enhancement of solar cells - Theory of overcoming the Lambertian limit
DOI:10.1016/j.jnoncrysol.2011.12.011 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:5 AU: Biswas, Rana;Xu, Chun;
12:4:109 Smoothening intermediate reflecting layer for tandem thin-film silicon solar cells
DOI:10.1016/j.solmat.2013.03.040 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Boccard, M.;Battaglia, C.;Blondiaux, N.;Pugin, R.;Despeisse, M.;Ballif, C.;
12:4:110 Integration of n-doped ZnO nanorod structures as novel light-trapping concept in amorphous thin film silicon solar cells
DOI:10.1016/j.solmat.2012.12.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:10 AU: Geissendoerfer, S.;Vehse, M.;Voss, T.;Richters, J. -P.;Hanke, B.;von Maydell, K.;Agert, C.;
12:4:111 Combined SiO2 antireflective coatings with MOCVD-ZnO:B to improve light absorption in thin-film solar cells
DOI:10.1016/j.solmat.2014.07.046 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Wang, Ning;Fang, Jia;Zhang, Xiaodan;Wang, Guangcai;Wang, Liguo;Liu, Caichi;Zhao, Huixu;Chen, Ze;Chen, Xin liang;Sun, Jian;Zhao, Ying;
12:4:112 Enhanced light-scattering properties of sputtered Ag/Al:Si bilayers deposited at a low substrate temperature - A potential back reflector for highly efficient flexible thin-film photovoltaic devices
DOI:10.1016/j.solmat.2014.07.049 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:1 AU: Cho, Jun-Sik;Kim, Sol Ji;Choi, Bo-Hun;Ahn, Seung Kyu;Park, Joo Hyung;
12:4:113 Improvement in performance of hydrogenated amorphous silicon solar cells with hydrogenated intrinsic amorphous silicon oxide p/i buffer layers
DOI:10.1016/j.solmat.2014.06.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Fang, Jia;Chen, Ze;Wang, Ning;Bai, Lisha;Hou, Guofu;Chen, Xinliang;Wei, Changchun;Wang, Guangcai;Sun, Jian;Zhao, Ying;Zhang, Xiaodan;
12:4:114 Silicon oxide buffer layer at the p-i interface in amorphous and microcrystalline silicon solar cells
DOI:10.1016/j.solmat.2013.08.034 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:19 AU: Bugnon, Gregory;Parascandolo, Gaetano;Haenni, Simon;Stuckelberger, Michael;Charriere, Mathieu;Despeisse, Matthieu;Meillaud, Fanny;Ballif, Christophe;
12:4:115 Modeling of light scattering properties from surface profile in thin-film solar cells by Fourier transform techniques
DOI:10.1016/j.tsf.2011.04.122 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Bittkau, K.;Schulte, M.;Klein, M.;Beckers, T.;Carius, R.;
12:4:116 Improving the electrical and optical properties of DC-sputtered ZnO:Al by thermal post deposition treatments
DOI:10.1016/j.tsf.2011.04.102 JN:THIN SOLID FILMS PY:2012
TC:22 AU: Wimmer, Mark;Ruske, Florian;Scherf, Simone;Rech, Bernd;
12:4:117 Analyzing nanotextured transparent conductive oxides for efficient light trapping in silicon thin film solar cells
DOI:10.1063/1.4750242 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Dewan, Rahul;Owen, Jorj I.;Madzharov, Darin;Jovanov, Vladislav;Huepkes, Juergen;Knipp, Dietmar;
12:4:118 Super-Lambertian photocurrent-generation in solar cells with periodically textured interfaces
DOI:10.1063/1.4822105 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Haug, F. -J.;Soederstroem, K.;Naqavi, A.;Li, J.;Ballif, C.;
12:4:119 Effects of film growth modes on light trapping in silicon thin film solar cells
DOI:10.1063/1.4882997 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wiesendanger, S.;Bischoff, T.;Jovanov, V.;Knipp, D.;Burger, S.;Lederer, F.;Rockstuhl, C.;
12:4:120 Optimal Moth Eye Nanostructure Array on Transparent Glass Towards Broadband Antireflection
DOI:10.1021/am402881x JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:14 AU: Ji, Seungmuk;Song, Kyungjun;Thanh Binh Nguyen;Kim, Namsoo;Lim, Hyuneui;
12:4:121 High surface textured SnO2 hybrid thin films fabricated using the nozzle-spraying process for solar cell applications
DOI:10.1016/j.apsusc.2013.03.100 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Chou, Li-Wei;Lin, Yang-Yi;Wu, Albert T.;
12:4:122 Extended light scattering model incorporating coherence for thin-film silicon solar cells
DOI:10.1063/1.3622328 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Lanz, Thomas;Ruhstaller, Beat;Battaglia, Corsin;Ballif, Christophe;
12:4:123 Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency
DOI:10.1063/1.4824813 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:18 AU: Stuckelberger, M.;Despeisse, M.;Bugnon, G.;Schuettauf, J. -W.;Haug, F. -J.;Ballif, C.;
12:4:124 A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films
DOI:10.1016/j.materresbull.2013.09.007 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:4 AU: Jambure, S. B.;Patil, S. J.;Deshpande, A. R.;Lokhande, C. D.;
12:4:125 Quasicrystalline-structured light harvesting nanophotonic silicon films on nanoimprinted glass for ultra-thin photovoltaics
DOI:10.1364/OME.4.002290 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Xavier, Jolly;Probst, Juergen;Back, Franziska;Wyss, Philippe;Eisenhauer, David;Loechel, Bernd;Rudigier-Voigt, Eveline;Becker, Christiane;
12:4:126 Highly reflective nanotextured sputtered silver back reflector for flexible high-efficiency n-i-p thin-film silicon solar cells
DOI:10.1016/j.solmat.2011.09.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:19 AU: Soederstroem, K.;Haug, F. -J.;Escarre, J.;Pahud, C.;Biron, R.;Ballif, C.;
12:4:127 Control of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristics
DOI:10.1016/j.solmat.2012.05.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:22 AU: Nicolay, S.;Benkhaira, M.;Ding, L.;Escarre, J.;Bugnon, G.;Meillaud, F.;Ballif, C.;
12:4:128 H-2-CH4 mixed gas plasma treatment on LP-MOCVD ZnO:B for amorphous silicon thin film solar cells
DOI:10.1016/j.solmat.2013.05.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:3 AU: Wang, Li;Zhang, Xiaodan;Yang, Xu;Wei, Changchun;Chen, Xinliang;Zhao, Ying;
12:4:129 Tailoring the surface morphology of zinc oxide films for high-performance micromorph solar cells
DOI:10.1016/j.solmat.2014.06.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Ding, L.;Fanni, L.;Messerschmidt, D.;Zabihzadeh, S.;Masis, M. Morales;Nicolay, S.;Ballif, C.;
12:4:130 Low-refractive-index and high-transmittance silicon oxide with a mixed phase of n-type microcrystalline silicon as intermediate reflector layers for tandem solar cells
DOI:10.1016/j.solmat.2013.10.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Jung, Seung-Jae;Kim, Byoung-June;Shin, Myunghun;
12:4:131 Transparent sculptured titania films for enhanced light absorption in thin-film Si solar cells
DOI:10.1016/j.tsf.2011.10.038 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Hung, Kai-Hsiang;Chiou, Guan-Di;Wong, Ming-Show;Wang, Yu-Chih;Chung, I-Shan;
12:4:132 Potential of high-mobility sputtered zinc oxide as front contact for high efficiency thin film silicon solar cells
DOI:10.1016/j.tsf.2013.10.014 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Stannowski, B.;Ruske, F.;Neubert, S.;Schoenau, S.;Ring, S.;Calnan, S.;Wimmer, M.;Gabriel, O.;Szyszka, B.;Rech, B.;Schlatmann, R.;
12:4:133 An efficient light trapping scheme based on textured conductive photonic crystal back reflector for performance improvement of amorphous silicon solar cells
DOI:10.1063/1.4893606 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Peizhuan;Hou, Guofu;Fan, QiHua;Huang, Qian;Zhao, Jing;Zhang, Jianjun;Ni, Jian;Zhang, Xiaodan;Zhao, Ying;
12:4:134 Window layer with p doped silicon oxide for high V-oc thin-film silicon n-i-p solar cells
DOI:10.1063/1.3669389 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Biron, Remi;Pahud, Celine;Haug, Franz-Josef;Escarre, Jordi;Soederstroem, Karin;Ballif, Christophe;
12:4:135 Light scattering at textured back contacts for n-i-p thin-film silicon solar cells
DOI:10.1063/1.3703572 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Bittkau, K.;Boettler, W.;Ermes, M.;Smirnov, V.;Finger, F.;
12:4:136 Optimal design of one-dimensional photonic crystal back reflectors for thin-film silicon solar cells
DOI:10.1063/1.4893180 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Chen, Peizhuan;Hou, Guofu;Zhang, Jianjun;Zhang, Xiaodan;Zhao, Ying;
12:4:137 Boron-doped hydrogenated microcrystalline silicon oxide (mu c-SiOx:H) for application in thin-film silicon solar cells
DOI:10.1016/j.jnoncrysol.2011.12.047 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:16 AU: Lambertz, A.;Finger, A. F.;Hollaender, B.;Rath, J. K.;Schropp, R. E. I.;
12:4:138 Thin-film silicon solar cell development on imprint-textured glass substrates
DOI:10.1016/j.mseb.2013.01.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:15 AU: Paetzold, Ulrich Wilhelm;Zhang, Wendi;Proempers, Michael;Kirchhoff, Joachim;Merdzhanova, Tsvetelina;Michard, Stephan;Carius, Reinhard;Gordijn, Aad;Meier, Matthias;
12:4:139 Modeling plasmonic scattering combined with thin-film optics
DOI:10.1088/0957-4484/22/2/025204 JN:NANOTECHNOLOGY PY:2011
TC:30 AU: Schmid, M.;Klenk, R.;Lux-Steiner, M. Ch;Topic, M.;Krc, J.;
12:4:140 Large area plasmonic nanoparticle arrays with well-defined size and shape
DOI:10.1364/OME.4.000944 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:2 AU: Meisenheimer, Sarah-Katharina;Juechter, Sabrina;Hoehn, Oliver;Hauser, Hubert;Wellens, Christine;Kuebler, Volker;von Hauff, Elizabeth;Blaesi, Benedikt;
12:4:141 LPCVD ZnO-based intermediate reflector for micromorph tandem solar cells
DOI:10.1016/j.solmat.2011.03.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:13 AU: Bugnon, G.;Soederstroem, T.;Nicolay, S.;Ding, L.;Despeisse, M.;Hedler, A.;Eberhardt, J.;Wachtendorf, C.;Ballif, C.;
12:4:142 Influence of back contact morphology on light trapping and plasmonic effects in microcrystalline silicon single junction and micromorph tandem solar cells
DOI:10.1016/j.solmat.2012.11.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:21 AU: Jovanov, Vladislav;Planchoke, Ujwol;Magnus, Philipp;Stiebig, Helmut;Knipp, Dietmar;
12:4:143 ZnO nanorod arrays as light trapping structures in amorphous silicon thin-film solar cells
DOI:10.1016/j.so1mat.2013.12.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:6 AU: Nowak, Regina-Elisabeth;Vehse, Martin;Sergeev, Oleg;von Maydell, Karsten;Agert, Carsten;
12:4:144 Superstrate type flexible thin-film Si solar cells using flexible glass substrates
DOI:10.1016/j.tsf.2013.11.039 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Myong, Seung Yeop;Jeon, La Sun;Kwon, Seong Won;
12:4:145 Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide
DOI:10.1063/1.4905456 JN:AIP ADVANCES PY:2014
TC:0 AU: Burghoorn, M.;Kniknie, B.;van Deelen, J.;Xu, M.;Vroon, Z.;van Ee, R.;van de Belt, R.;Buskens, P.;
12:4:146 Hydrogenated amorphous silicon solar cell on glass substrate patterned by hexagonal nanocylinder array
DOI:10.1063/1.3515853 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Tu, Wei-Chen;Chang, Yi-Tsung;Yang, Chieh-Hung;Yeh, Dan-Ju;Ho, Chung-I;Hsueh, Chun-Yuan;Lee, Si-Chen;
12:4:147 Front contact layer of multiphase silicon-carbon in thin film silicon solar cell
DOI:10.1063/1.4756798 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Kim, Sun Ho;You, Dong Joo;Park, Jin Hee;Lee, Sung Eun;Lee, Heon-Min;Kim, Donghwan;
12:4:148 Limit of light coupling strength in solar cells
DOI:10.1063/1.4801311 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Naqavi, A.;Haug, F. -J.;Ballif, C.;Scharf, T.;Herzig, H. P.;
12:4:149 Nanoimprint-assisted fabrication of high haze metal mesh electrode for solar cells
DOI:10.1063/1.4903061 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Iwahashi, Takashi;Yang, Rong;Okabe, Noriaki;Sakurai, Junpei;Lin, Jun;Matsunaga, Daisuke;
12:4:150 Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells
DOI:10.1063/1.4883496 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, Guijun;Ho, Jacob Y. L.;Li, He;Kwok, Hoi-Sing;
12:4:151 Exploration of nano-element array architectures for substrate solar cells using an a-Si:H absorber
DOI:10.1063/1.4729539 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Nam, Wook Jun;Ji, Liming;Varadan, Vasundara V.;Fonash, Stephen J.;
12:4:152 Comparison of light scattering in solar cells modeled by rigorous and scalar approach
DOI:10.1063/1.4790360 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Ermes, M.;Bittkau, K.;Carius, R.;
12:4:153 Microcrystalline silicon oxide (mu c-SiOx:H) alloys: A versatile material for application in thin film silicon single and tandem junction solar cells
DOI:10.1016/j.jnoncrysol.2011.12.019 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:19 AU: Smirnov, V.;Lambertz, A.;Grootoonk, B.;Carius, R.;Finger, F.;
12:4:154 Origin of the V-oc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells
DOI:10.1016/j.jnoncrysol.2012.01.058 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:15 AU: Biron, Remi;Pahud, Celine;Haug, Franz-Josef;Ballif, Christophe;
12:4:155 Design and application of dielectric distributed Bragg back reflector in thin-film silicon solar cells
DOI:10.1016/j.jnoncrysol.2011.11.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:10 AU: Isabella, O.;Dobrovolskiy, S.;Kroon, G.;Zeman, M.;
12:4:156 Novel a-Si:H/mu c-Si:H tandem cell with lower optical loss
DOI:10.1016/j.jnoncrysol.2012.01.060 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:10 AU: Janthong, Bancha;Hongsingthong, Aswin;Krajangsang, Taweewat;Zhang, Liping;Sichanugrist, Porponth;Konagai, Makoto;
12:4:157 Amorphous and nanocrystalline silicon thin film photovoltaic technology on flexible substrates
DOI:10.1116/1.4707154 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:7 AU: Yan, Baojie;Yang, Jeffrey;Guha, Subhendu;
12:4:158 Optimized short-circuit current mismatch in multi-junction solar cells
DOI:10.1016/j.solmat.2013.05.046 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:12 AU: Bonnet-Eymard, M.;Boccard, M.;Bugnon, G.;Sculati-Meillaud, F.;Despeisse, M.;Ballif, C.;
12:4:159 AZO-Ag-AZO transparent electrode for amorphous silicon solar cells
DOI:10.1016/j.tsf.2014.02.042 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Theuring, Martin;Vehse, Martin;von Maydell, Karsten;Agert, Carsten;
12:4:160 Light absorption in textured thin film silicon solar cells: A simple scalar scattering approach versus rigorous simulation
DOI:10.1063/1.3549175 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Rockstuhl, C.;Fahr, S.;Lederer, F.;Haug, F. -J.;Soederstroem, T.;Nicolay, S.;Despeisse, M.;Ballif, C.;
12:4:161 Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells
DOI:10.1063/1.4793415 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Palanchoke, U.;Jovanov, V.;Kurz, H.;Dewan, R.;Magnus, P.;Stiebig, H.;Knipp, D.;
12:4:162 Effect of Substrate Morphology Slope Distributions on Light Scattering, nc-Si:H Film Growth, and Solar Cell Performance
DOI:10.1021/am5054114 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kim, Do Yun;Santbergen, Rudi;Jager, Klaus;Sever, Martin;Krc, Janez;Topic, Marko;Haenni, Simon;Zhang, Chao;Heidt, Anna;Meier, Matthias;van Swaaij, Rene A. C. M. M.;Zeman, Miro;
12:4:163 Modeling and optimization of white paint back reflectors for thin-film silicon solar cells
DOI:10.1063/1.3512907 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Lipovsek, Benjamin;Krc, Janez;Isabella, Olindo;Zeman, Miro;Topic, Marko;
12:4:164 Three dimensional optical modeling of amorphous silicon thin film solar cells using the finite-difference time-domain method including real randomly surface topographies
DOI:10.1063/1.3610516 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Lacombe, Juergen;Sergeev, Oleg;Chakanga, Kambulakwao;von Maydell, Karsten;Agert, Carsten;
12:4:165 The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells
DOI:10.1063/1.4790875 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Demontis, V.;Sanna, C.;Melskens, J.;Santbergen, R.;Smets, A. H. M.;Damiano, A.;Zeman, M.;
12:4:166 Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures
DOI:10.1063/1.4895694 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Akhter, Perveen;Huang, Mengbing;Kadakia, Nirag;Spratt, William;Malladi, Girish;Bakhru, Hassarum;
12:4:167 Technological status of plasma-deposited thin-film silicon photovoltaics
DOI:10.1016/j.solmat.2013.09.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:12 AU: Shah, Arvind;Moulin, Etienne;Ballif, Christophe;
12:4:168 ZnO:B back reflector with high haze and low absorption enhanced triple-junction thin film Si solar modules
DOI:10.1016/j.solmat.2013.11.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Heo, Youn Ho;You, Dong Joo;Lee, Hyun;Lee, Sungeun;Lee, Heon-Min;
12:4:169 Enhanced light trapping in polycrystalline silicon thin-film solar cells using plasma-etched submicron textures
DOI:10.1016/j.solmat.2013.11.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:8 AU: Huang, Ying;Sahraei, Nasim;Widenborg, Per I.;Peters, Ian Marius;Dalapati, Goutam Kumar;Iskander, Aneesa;Aberle, Armin G.;
12:4:170 Surface nanostructure effects on optical properties of Pb(Zr (x) Ti1-x )O-3 thin films
DOI:10.1007/s00339-013-8138-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Puustinen, Jarkko;Lappalainen, Jyrki;Hiltunen, Jussi;Hiltunen, Marianne;
12:4:171 Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate
DOI:10.1063/1.3449571 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Parascandolo, G.;Bartlome, R.;Bugnon, G.;Soederstroem, T.;Strahm, B.;Feltrin, A.;Ballif, C.;
12:4:172 The interplay of intermediate reflectors and randomly textured surfaces in tandem solar cells
DOI:10.1063/1.3509414 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Fahr, Stephan;Rockstuhl, Carsten;Lederer, Falk;
12:4:173 Incorporation of a light and carrier collection management nano-element array into superstrate a-Si:H solar cells
DOI:10.1063/1.3628460 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Nam, Wook Jun;Ji, Liming;Benanti, Travis L.;Varadan, Vasundara V.;Wagner, Sigurd;Wang, Qi;Nemeth, William;Neidich, Douglas;Fonash, Stephen J.;
12:4:174 The rigorous wave optics design of diffuse medium reflectors for photovoltaics
DOI:10.1063/1.4872140 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Lin, Albert;Fu, Sze Ming;Zhong, Yan Kai;Tseng, Chi Wei;Chen, Po Yu;Ju, Nyan Ping;
12:4:175 Study on the in-line sputtering growth and structural properties of polycrystalline ZnO:Al on ZnO and glass
DOI:10.1016/j.jcrysgro.2012.01.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:10 AU: Owen, Jorj I.;Zhang, Wendi;Koehl, Dominik;Huepkes, Juergen;
12:4:176 a-Si:H/mu c-Si:H tandem junction based photocathodes with high open-circuit voltage for efficient hydrogen production
DOI:10.1557/jmr.2014.308 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:3 AU: Urbain, Felix;Smirnov, Vladimir;Becker, Jan-Philipp;Rau, Uwe;Finger, Friedhelm;Ziegler, Juergen;Kaiser, Bernhard;Jaegermann, Wolfram;
12:4:177 Fabrication and characterization of nanorod solar cells with an ultrathin a-Si:H absorber layer
DOI:10.1016/j.jnoncrysol.2011.11.021 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:11 AU: Kuang, Yinghuan;van der Werf, Karine H. M.;Houweling, Z. Silvester;Di Vece, Marcel;Schropp, Ruud E. I.;
12:4:178 Comparison of optical properties of periodic photonic-plasmonic and randomly textured back reflectors for nc-Si solar cells
DOI:10.1016/j.jnoncrysol.2011.12.108 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Bhattacharya, J.;Chakravarty, N.;Pattnaik, S.;Slafer, W. D.;Biswas, R.;Dalal, V.;
12:4:179 High diffuse reflection of light using a textured 304BA stainless steel substrate
DOI:10.1016/j.matchemphys.2011.07.065 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:2 AU: Lee, Shuo-Jen;Lin, Chih-Yuan;Cheng, Shiow-Long;Ke, Wen-Cheng;
12:4:180 Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells
DOI:10.1016/j.mseb.2012.10.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:7 AU: Paetzold, Ulrich W.;Meier, Matthias;Moulin, Etienne;Smirnov, Vladimir;Pieters, Bart E.;Rau, Uwe;Carius, Reinhard;
12:4:181 Thin-film silicon solar cells applying optically decoupled back reflectors
DOI:10.1016/j.mseb.2012.10.016 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Moulin, E.;Paetzold, U. W.;Bittkau, K.;Ermes, M.;Ding, L.;Fanni, L.;Nicolay, S.;Kirchhoff, J.;Weigand, D.;Bauer, A.;Lambertz, A.;Ballif, C.;Carius, R.;
12:4:182 Realization of high efficiency micromorph tandem silicon solar cells on glass and plastic substrates: Issues and potential
DOI:10.1016/j.solmat.2010.02.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:13 AU: Meillaud, F.;Feltrin, A.;Despeisse, M.;Haug, F-J.;Domine, D.;Python, M.;Soederstroem, T.;Cuony, P.;Boccard, M.;Nicolay, S.;Ballif, C.;
12:4:183 Effect of impurities on performance of hydrogenated nanocrystalline silicon solar cells
DOI:10.1016/j.solmat.2012.05.005 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:9 AU: Yue, Guozhen;Yan, Baojie;Sivec, Laura;Zhou, Yanhua;Yang, Jeffrey;Guha, Subhendu;
12:4:184 Effect of nanotextured back reflectors on light trapping in flexible silicon thin-film solar cells
DOI:10.1016/j.solmat.2012.03.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:16 AU: Cho, Jun-Sik;Back, Sanghun;Park, Sang-Hyun;Park, Joo Hyung;Yoo, Jinsu;Yoon, Kyung Hoon;
12:4:185 Advanced light trapping designs for high efficiency thin film silicon solar cells
DOI:10.1016/j.solmat.2013.07.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Feltrin, Andrea;Meguro, Tomomi;Van Assche, Elisabeth;Suezaki, Takashi;Ichikawa, Mitsuru;Kuchiyama, Takashi;Adachi, Daisuke;Inaki, Osamu;Yoshikawa, Kunta;Koizumi, Gensuke;Uzu, Hisashi;Ueda, Hiroaki;Uto, Toshihiko;Fujimoto, Takahisa;Irie, Toru;Hayakawa, Hironori;Nakanishi, Naoaki;Yoshimi, Masashi;Yamamoto, Kenji;
12:4:186 Light management in hydrogenated amorphous silicon germanium solar cells
DOI:10.1016/j.solmat.2014.05.008 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Liu, Bofei;Bai, Lisha;Zhang, Xiaodan;Zhang, Dekun;Wei, Changchun;Sun, Jian;Huang, Qian;Chen, Xinliang;Ni, Jian;Wang, Guangcai;Zhao, Ying;
12:4:187 Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates
DOI:10.1016/j.tsf.2011.06.080 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Steinhauser, J.;Boucher, J. -F.;Omnes, E.;Borrello, D.;Vallat-Sauvain, E.;Monteduro, G.;Marmelo, M.;Orhan, J. -B.;Wolf, B.;Bailat, J.;Benagli, S.;Meier, J.;Kroll, U.;
12:4:188 Plasma deposition of n-SiOx nanocrystalline thin film for enhancing the performance of silicon thin film solar cells
DOI:10.1016/j.tsf.2011.06.068 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Zhang, X. D.;Yue, Q.;Zheng, X. X.;Geng, X. H.;Zhao, Y.;
12:4:189 Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells
DOI:10.1016/j.tsf.2013.04.138 JN:THIN SOLID FILMS PY:2013
TC:10 AU: Hongsingthong, Aswin;Krajangsang, Taweewat;Limmanee, Amornrat;Sriprapha, Kobsak;Sritharathikhun, Jaran;Konagai, Makoto;
12:4:190 Influence of H2O/DEZ ratio on LPCVD ZnO:B films for application in a-Si:H/mu c-Si:H tandem solar cells
DOI:10.1007/s00339-013-7815-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Wan, M.;Zhu, H.;Wang, Y.;Yin, J.;Gao, J.;Wang, Z.;Guan, F.;Mai, Y.;Huang, Y.;Yu, W.;Huang, S.;
12:4:191 Sandwiching intermediate reflectors in tandem solar cells for improved photon management
DOI:10.1063/1.4755873 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Fahr, Stephan;Rockstuhl, Carsten;Lederer, Falk;
12:4:192 Modeling of light scattering from micro- and nanotextured surfaces (vol 107, 044504, 2010)
DOI:10.1063/1.3380794 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Domine, D.;Haug, F. -J.;Battaglia, C.;Ballif, C.;
12:4:193 Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications
DOI:10.1063/1.3264626 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Mueller, Thomas;Schwertheim, Stefan;Fahrner, Wolfgang R.;
12:4:194 Ethanol-enriched low-pressure chemical vapor deposition ZnO bilayers: Properties and growth-A potential electrode for thin film solar cells
DOI:10.1063/1.4775483 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Messerschmidt, Daniel;Nicolay, Sylvain;Ding, Laura;Bugnon, Gregory;Meillaud, Fanny;Eberhardt, Jens;Ballif, Christophe;
12:4:195 Effect of oxygen doping in microcrystalline SiGe p-i-n solar cells
DOI:10.1063/1.4891684 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Bidiville, A.;Matsui, T.;Kondo, M.;
12:4:196 Localized surface plasmon enhanced microcrystalline-silicon solar cells
DOI:10.1016/j.jnoncrysol.2011.12.038 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:9 AU: Chantana, Jakapan;Yang, Yanqiu;Sobajima, Yasushi;Sada, Chitose;Matsuda, Akihisa;Okamoto, Hiroaki;
12:4:197 Tuning the plasmonic absorption of metal reflectors by zinc oxide nano particles: Application in thin film solar cells
DOI:10.1016/j.nanoen.2014.03.008 JN:NANO ENERGY PY:2014
TC:3 AU: Palanchoke, Ujwol;Kurz, Henning;Noriega, Rodrigo;Arabi, Sahar;Jovanov, Vladislav;Magnus, Philipp;Aftab, Hasan;Salleo, Alberto;Stiebig, Helmut;Knipp, Dietmar;
12:4:198 Management of light-trapping effect for a-Si:H/mu c-Si:H tandem solar cells using novel substrates, based on MOCVD ZnO and etched white glass
DOI:10.1016/j.solmat.2013.06.045 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:22 AU: Janthong, Bancha;Moriya, Yuki;Hongsingthong, Aswin;Sichanugrist, Porponth;Konagai, Makoto;
12:4:199 A photovoltaic light trapping estimation method for textured glass based on surface decoupling calculation
DOI:10.1016/j.solmat.2012.10.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:2 AU: Cui, Hongtao;Green, Martin;Campbell, Patrick;Kunz, Oliver;Varlamov, Sergey;
12:4:200 In situ manipulation of the sub gap States in hydrogenated amorphous silicon monitored by advanced application of Fourier transform photocurrent spectroscopy
DOI:10.1016/j.solmat.2014.03.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Melskens, J.;Schouten, M.;Santbergen, R.;Fischer, M.;Vasudevan, R.;van der Vlies, D. J.;Quax, R. J. V.;Heirman, S. G. M.;Jager, K.;Demontis, V.;Zeman, M.;Smets, A. H. M.;
12:4:201 Stability of plasmonic metal nanoparticles integrated in the back contact of ultra-thin Cu(In,Ga)S-2 solar cells
DOI:10.1016/j.tsf.2012.12.023 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Schmid, M.;Klaer, J.;Klenk, R.;Topic, M.;Krc, J.;
12:4:202 c-texture versus a-texture low pressure metalorganic chemical vapor deposition ZnO films: Lower resistivity despite smaller grain size
DOI:10.1016/j.tsf.2014.06.033 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Fanni, L.;Aebersold, B. A.;Alexander, D. T. L.;Ding, L.;Masis, M. Morales;Nicolay, S.;Ballif, C.;
12:4:203 Doped SiOx emitter layer in amorphous/crystalline silicon heterojunction solar cell
DOI:10.1007/s00339-013-7858-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Izzi, M.;Tucci, M.;Serenelli, L.;Mangiapane, P.;Della Noce, M.;Usatii, I.;Esposito, E.;Mercaldo, L. V.;Veneri, P. Delli;
12:4:204 Efficient optical absorption enhancement in organic solar cells by using a 2-dimensional periodic light trapping structure
DOI:10.1063/1.4884963 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zu, Feng-Shuo;Shi, Xiao-Bo;Liang, Jian;Xu, Mei-Feng;Lee, Chun-Sing;Wang, Zhao-Kui;Liao, Liang-Sheng;
12:4:205 Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD
DOI:10.1016/j.apsusc.2013.09.148 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Addonizio, M. L.;Spadoni, A.;Antonaia, A.;
12:4:206 Growth process of microcrystalline silicon studied by combined photoluminescence and Raman investigations
DOI:10.1063/1.4838058 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Klossek, A.;Mankovics, D.;Arguirov, T.;Ratzke, M.;Kirner, S.;Friedrich, F.;Gabriel, O.;Stannowski, B.;Schlatmann, R.;Kittler, M.;
12:4:207 Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation
DOI:10.1016/j.jnoncrysol.2011.12.031 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:5 AU: Holovsky, J.;Schmid, M.;Stuckelberger, M.;Despeisse, M.;Ballif, C.;Poruba, A.;Vanecek, M.;
12:4:208 Inline deposited thin-film silicon solar cells on imprinted foil using linear PECVD sources
DOI:10.1016/j.jnoncrysol.2011.12.054 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Van Aken, Bas B.;Loffler, Jochen;Heijna, Maurits C. R.;Soppe, Wim J.;
12:4:209 Polymer molded templates for nanostructured amorphous silicon photovoltaics
DOI:10.1116/1.3554720 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Pei, Lei;Balls, Amy;Tippets, Cary;Abbott, Jonathan;Linford, Matthew R.;Hu, Jian;Madan, Arun;Allred, David D.;Vanfleet, Richard R.;Davis, Robert C.;
12:4:210 The AM1.5 absorption factor of thin-film solar cells
DOI:10.1016/j.solmat.2009.12.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:15 AU: Santbergen, R.;Goud, J. M.;Zeman, M.;van Roosmalen, J. A. M.;van Zolingen, R. J. C.;
12:4:211 Large area Si thin film solar module applying n-mu c-SiOx:H intermediate layer with low refractive index
DOI:10.1016/j.solmat.2013.01.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:8 AU: Hwang, Sun-Tae;You, Dong Joo;Kim, Sun Ho;Lee, Sungeun;Lee, Heon-Min;
12:4:212 Investigation on growth behavior of multiphase silicon carbon film for front contact layer in a Si thin film solar cell
DOI:10.1016/j.solmat.2014.03.054 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:1 AU: Kim, Sun Ho;You, Dong Joo;Hwang, Sun-Tae;Lee, Hae-Seok;Lee, Sungeun;Lee, Heon-Min;Kim, Donghwan;
12:4:213 Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature
DOI:10.1016/j.tsf.2010.12.185 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Kaerber, E.;Katerski, A.;Acik, I. Oja;Mikli, V.;Mere, A.;Krunks, M.;
12:4:214 Formation and coarsening of sponge-like Si-SiO2 nanocomposites
DOI:10.1063/1.4822125 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Liedke, B.;Heinig, K-H;Muecklich, A.;Schmidt, B.;
12:4:215 Powder formation in SiH4-H-2 discharge in large area capacitively coupled reactors: A study of the combined effect of interelectrode distance and pressure
DOI:10.1063/1.3282802 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Strahm, B.;Hollenstein, Ch.;
12:4:216 Nanoscale structuration and optical properties of thin gold films on textured FTO
DOI:10.1007/s10853-014-8560-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Gentile, A.;Cacciato, G.;Ruffino, F.;Reitano, R.;Scapellato, G.;Zimbone, M.;Lombardo, S.;Battaglia, A.;Gerardi, C.;Foti, M.;Grimaldi, M. G.;
12:4:217 Variation of back reflector morphology in n-i-p microcrystalline silicon thin film solar cells using texture-etched ZnO
DOI:10.1016/j.jnoncrysol.2011.12.100 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Boettler, W.;Smirnov, V.;Huepkes, J.;Finger, F.;
12:4:218 Transparent solar cell window module
DOI:10.1016/j.solmat.2009.12.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:11 AU: Chau, Joseph Lik Hang;Chen, Ruei-Tang;Hwang, Gan-Lin;Tsai, Ping-Yuan;Lin, Chien-Chu;
12:4:219 Improvement of hydrogenated microcrystalline silicon solar cell performance by VHF power profiling technique
DOI:10.1016/j.solmat.2009.09.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:4 AU: Han, Xiaoyan;Hou, Guofu;Zhang, Xiaodan;Wei, Changchun;Li, Guijun;Zhang, Jianjun;Chen, Xinliang;Zhang, Dekun;Sun, Jian;Zhao, Ying;Geng, Xinhua;
12:4:220 Material properties of microcrystalline silicon for solar cell application
DOI:10.1016/j.solmat.2010.02.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:10 AU: Lee, Czang-Ho;Shin, Myunghun;Lim, Mi-Hwa;Seo, Jun-Yong;Lee, Jung-Eun;Lee, Hee-Yong;Kim, Byoung-June;Choi, Donguk;
12:4:221 Photocurrent increase in amorphous Si solar cells by increased reflectivity of LiF/Al electrodes
DOI:10.1016/j.solmat.2012.06.044 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:5 AU: Lanz, T.;Fang, L.;Baik, S. J.;Lim, K. S.;Ruhstaller, B.;
12:4:222 Variable light biasing method to measure component I-V characteristics of multi-junction solar cells
DOI:10.1016/j.solmat.2012.04.014 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:0 AU: Hoiovsky, J.;Bonnet-Eymard, M.;Boccard, M.;Despeisse, M.;Ballif, C.;
12:4:223 On monitoring of gas leak in the plasma vacuum process with optical emission spectroscopy
DOI:10.1016/j.tsf.2010.01.050 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Pyun, S. C.;Kwon, J. H.;You, S. J.;Seong, D. J.;Kim, J. H.;Shin, Y. H.;Shin, J. S.;
12:4:224 Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
DOI:10.1016/j.tsf.2011.04.111 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Shuaib, A.;Levallois, C.;Gauthier, J. P.;Paranthoen, C.;Durand, O.;Cornet, C.;Chevalier, N.;Le Corre, A.;
12:4:225 Thin films in photovoltaics: Technologies and perspectives
DOI:10.1016/j.tsf.2011.04.146 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Hoffmann, Winfried;Pellkofer, Thomas;
12:4:226 Analytical considerations of light transport in nanostructured homogeneous/inhomogeneous thin films
DOI:10.1016/j.tsf.2013.06.066 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Shen, H. P.;Zhao, C. Y.;
12:4:227 The effects of surface roughness on low haze ultrathin nanocomposite films
DOI:10.1016/j.tsf.2013.04.126 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Kanniah, Vinod;Grulke, Eric A.;Druffel, Thad;
12:4:228 Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24 GHz) plasma from silicon tetrafluoride precursor
DOI:10.1016/j.tsf.2014.03.091 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Mansfeld, D. A.;Vodopyanov, A. V.;Golubev, S. V.;Sennikov, P. G.;Mochalov, L. A.;Andreev, B. A.;Drozdov, Yu N.;Drozdov, M. N.;Shashkin, V. I.;Bulkine, P.;Cabarrocas, P. Roca i;
12:5:1:1 Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
DOI:10.1063/1.3570656 JN:APPLIED PHYSICS LETTERS PY:2011
TC:143 AU: Kioupakis, Emmanouil;Rinke, Patrick;Delaney, Kris T.;Van de Walle, Chris G.;
12:5:1:2 Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
DOI:10.1063/1.4816434 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:55 AU: Verzellesi, Giovanni;Saguatti, Davide;Meneghini, Matteo;Bertazzi, Francesco;Goano, Michele;Meneghesso, Gaudenzio;Zanoni, Enrico;
12:5:1:3 Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
DOI:10.1103/PhysRevLett.110.177406 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:81 AU: Iveland, Justin;Martinelli, Lucio;Peretti, Jacques;Speck, James S.;Weisbuch, Claude;
12:5:1:4 Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
DOI:10.1063/1.4882176 JN:AIP ADVANCES PY:2014
TC:6 AU: Calciati, Marco;Goano, Michele;Bertazzi, Francesco;Vallone, Marco;Zhou, Xiangyu;Ghione, Giovanni;Meneghini, Matteo;Meneghesso, Gaudenzio;Zanoni, Enrico;Bellotti, Enrico;Verzellesi, Giovanni;Zhu, Dandan;Humphreys, Colin;
12:5:1:5 Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
DOI:10.1063/1.3446889 JN:APPLIED PHYSICS LETTERS PY:2010
TC:100 AU: Hader, J.;Moloney, J. V.;Koch, S. W.;
12:5:1:6 Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
DOI:10.1063/1.3330870 JN:APPLIED PHYSICS LETTERS PY:2010
TC:99 AU: David, Aurelien;Grundmann, Michael J.;
12:5:1:7 A numerical study of Auger recombination in bulk InGaN
DOI:10.1063/1.3525605 JN:APPLIED PHYSICS LETTERS PY:2010
TC:42 AU: Bertazzi, Francesco;Goano, Michele;Bellotti, Enrico;
12:5:1:8 Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
DOI:10.1063/1.4769374 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Kioupakis, Emmanouil;Yan, Qimin;Van de Walle, Chris G.;
12:5:1:9 Numerical analysis of indirect Auger transitions in InGaN
DOI:10.1063/1.4733353 JN:APPLIED PHYSICS LETTERS PY:2012
TC:27 AU: Bertazzi, Francesco;Goano, Michele;Bellotti, Enrico;
12:5:1:10 Temperature-dependence of the internal efficiency droop in GaN-based diodes
DOI:10.1063/1.3658031 JN:APPLIED PHYSICS LETTERS PY:2011
TC:42 AU: Hader, J.;Moloney, J. V.;Koch, S. W.;
12:5:1:11 Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes
DOI:10.1063/1.4900865 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tian, Pengfei;McKendry, Jonathan J. D.;Herrnsdorf, Johannes;Watson, Scott;Ferreira, Ricardo;Watson, Ian M.;Gu, Erdan;Kelly, Anthony E.;Dawson, Martin D.;
12:5:1:12 Recombination coefficients of GaN-based laser diodes
DOI:10.1063/1.3585872 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:45 AU: Scheibenzuber, W. G.;Schwarz, U. T.;Sulmoni, L.;Dorsaz, J.;Carlin, J. -F.;Grandjean, N.;
12:5:1:13 Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
DOI:10.1063/1.3462916 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: David, Aurelien;Grundmann, Michael J.;
12:5:1:14 Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
DOI:10.1063/1.3493654 JN:APPLIED PHYSICS LETTERS PY:2010
TC:46 AU: Dai, Qi;Shan, Qifeng;Wang, Jing;Chhajed, Sameer;Cho, Jaehee;Schubert, E. Fred;Crawford, Mary H.;Koleske, Daniel D.;Kim, Min-Ho;Park, Yongjo;
12:5:1:15 Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
DOI:10.1063/1.3698113 JN:APPLIED PHYSICS LETTERS PY:2012
TC:32 AU: Ryu, Han-Youl;Shin, Dong-Soo;Shim, Jong-In;
12:5:1:16 Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
DOI:10.1063/1.3671395 JN:APPLIED PHYSICS LETTERS PY:2011
TC:42 AU: Meyaard, David S.;Lin, Guan-Bo;Shan, Qifeng;Cho, Jaehee;Schubert, E. Fred;Shim, Hyunwook;Kim, Min-Ho;Sone, Cheolsoo;
12:5:1:17 On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
DOI:10.1063/1.3618673 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Meyaard, David S.;Shan, Qifeng;Dai, Qi;Cho, Jaehee;Schubert, E. Fred;Kim, Min-Ho;Sone, Cheolsoo;
12:5:1:18 Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
DOI:10.1063/1.4704366 JN:APPLIED PHYSICS LETTERS PY:2012
TC:39 AU: Lin, Guan-Bo;Meyaard, David;Cho, Jaehee;Schubert, E. Fred;Shim, Hyunwook;Sone, Cheolsoo;
12:5:1:19 InGaN light-emitting diodes: Efficiency-limiting processes at high injection
DOI:10.1116/1.4810789 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:13 AU: Avrutin, Vitaliy;Hafiz, Shopan Din Ahmad;Zhang, Fan;Oezguer, Uemit;Morkoc, Hadis;Matulionis, Arvidas;
12:5:1:20 Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
DOI:10.1063/1.3367897 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Bochkareva, N. I.;Voronenkov, V. V.;Gorbunov, R. I.;Zubrilov, A. S.;Lelikov, Y. S.;Latyshev, P. E.;Rebane, Y. T.;Tsyuk, A. I.;Shreter, Y. G.;
12:5:1:21 Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
DOI:10.1063/1.4811558 JN:APPLIED PHYSICS LETTERS PY:2013
TC:17 AU: Meyaard, David S.;Lin, Guan-Bo;Cho, Jaehee;Schubert, E. Fred;Shim, Hyunwook;Han, Sang-Heon;Kim, Min-Ho;Sone, Cheolsoo;Kim, Young Sun;
12:5:1:22 Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
DOI:10.1063/1.4754688 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Galler, B.;Drechsel, P.;Monnard, R.;Rode, P.;Stauss, P.;Froehlich, S.;Bergbauer, W.;Binder, M.;Sabathil, M.;Hahn, B.;Wagner, J.;
12:5:1:23 Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
DOI:10.1063/1.4819129 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Bertazzi, Francesco;Zhou, Xiangyu;Goano, Michele;Ghione, Giovanni;Bellotti, Enrico;
12:5:1:24 The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes
DOI:10.1063/1.4833915 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Vaxenburg, Roman;Rodina, Anna;Lifshitz, Efrat;Efros, Alexander L.;
12:5:1:25 InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
DOI:10.1063/1.3465658 JN:APPLIED PHYSICS LETTERS PY:2010
TC:35 AU: Ni, X.;Li, X.;Lee, J.;Liu, S.;Avrutin, V.;Ozgur, U.;Morkoc, H.;Matulionis, A.;Paskova, T.;Mulholland, G.;Evans, K. R.;
12:5:1:26 Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
DOI:10.1063/1.3657149 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Farrell, R. M.;Haeger, D. A.;Hsu, P. S.;Fujito, K.;Feezell, D. F.;DenBaars, S. P.;Speck, J. S.;Nakamura, S.;
12:5:1:27 Analysis of below-threshold efficiency characteristics of InGaN-based blue laser diodes
DOI:10.1063/1.4759247 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Ryu, Han-Youl;Choi, Won Jun;Jeon, Ki-Seong;Kang, Min-Goo;Choi, Yunho;Lee, Jeong-Soo;
12:5:1:28 On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
DOI:10.1063/1.3544584 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Dai, Qi;Shan, Qifeng;Cho, Jaehee;Schubert, E. Fred;Crawford, Mary H.;Koleske, Daniel D.;Kim, Min-Ho;Park, Yongjo;
12:5:1:29 Efficiency droop in AlGaInP and GaInN light-emitting diodes
DOI:10.1063/1.3694044 JN:APPLIED PHYSICS LETTERS PY:2012
TC:26 AU: Shim, Jong-In;Han, Dong-Pyo;Kim, Hyunsung;Shin, Dong-Soo;Lin, Guan-Bo;Meyaard, David S.;Shan, Qifeng;Cho, Jaehee;Schubert, E. Fred;Shim, Hyunwook;Sone, Cheolsoo;
12:5:1:30 The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
DOI:10.1063/1.4756791 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Chung, Roy B.;Han, Changseok;Pan, Chih-Chien;Pfaff, Nathan;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:5:1:31 Droop in III-nitrides: Comparison of bulk and injection contributions
DOI:10.1063/1.3515851 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: David, Aurelien;Gardner, Nathan F.;
12:5:1:32 Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes
DOI:10.1063/1.4789364 JN:APPLIED PHYSICS LETTERS PY:2013
TC:25 AU: Vaxenburg, R.;Lifshitz, E.;Efros, Al L.;
12:5:1:33 Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
DOI:10.1063/1.3688041 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Meyaard, David S.;Shan, Qifeng;Cho, Jaehee;Schubert, E. Fred;Han, Sang-Heon;Kim, Min-Ho;Sone, Cheolsoo;Oh, Seung Jae;Kim, Jong Kyu;
12:5:1:34 Recombination dynamics in InxGa1-xN quantum wells-Contribution of excited subband recombination to carrier leakage
DOI:10.1063/1.4901256 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Schulz, T.;Nirschl, A.;Drechsel, P.;Nippert, F.;Markurt, T.;Albrecht, M.;Hoffmann, A.;
12:5:1:35 On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
DOI:10.1063/1.4817834 JN:AIP ADVANCES PY:2013
TC:1 AU: Zhang, Shaofei;Li, Yukun;Fathololoumi, Saeed;Hieu Pham Trung Nguyen;Wang, Qi;Mi, Zetian;Li, Qiming;Wang, George T.;
12:5:1:36 Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes
DOI:10.1063/1.3529470 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Malyutenko, V. K.;Bolgov, S. S.;Podoltsev, A. D.;
12:5:1:37 Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
DOI:10.1063/1.4736565 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Kivisaari, Pyry;Riuttanen, Lauri;Oksanen, Jani;Suihkonen, Sami;Ali, Muhammad;Lipsanen, Harri;Tulkki, Jukka;
12:5:1:38 Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
DOI:10.1063/1.4818761 JN:APPLIED PHYSICS LETTERS PY:2013
TC:23 AU: Binder, M.;Nirschl, A.;Zeisel, R.;Hager, T.;Lugauer, H. -J.;Sabathil, M.;Bougeard, D.;Wagner, J.;Galler, B.;
12:5:1:39 Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
DOI:10.1063/1.4794078 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Green, Richard P.;McKendry, Jonathan J. D.;Massoubre, David;Gu, Erdan;Dawson, Martin D.;Kelly, A. E.;
12:5:1:40 On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes
DOI:10.1063/1.4894862 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Sadi, Toufik;Kivisaari, Pyry;Oksanen, Jani;Tulkki, Jukka;
12:5:1:41 Highly nonlinear defect-induced carrier recombination rates in semiconductors
DOI:10.1063/1.4824065 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Modine, N. A.;Armstrong, A. M.;Crawford, M. H.;Chow, W. W.;
12:5:1:42 Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
DOI:10.1063/1.4817800 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Park, Jun Hyuk;Kim, Dong Yeong;Hwang, Sunyong;Meyaard, David;Schubert, E. Fred;Han, Yu Dae;Choi, Joo Won;Cho, Jaehee;Kim, Jong Kyu;
12:5:1:43 Investigations on correlation between I-V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes
DOI:10.1063/1.4833895 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Binder, M.;Galler, B.;Furitsch, M.;Off, J.;Wagner, J.;Zeisel, R.;Katz, S.;
12:5:1:44 Deriving k.p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures
DOI:10.1063/1.4890585 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhou, Xiangyu;Bertazzi, Francesco;Goano, Michele;Ghione, Giovanni;Bellotti, Enrico;
12:5:1:45 Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
DOI:10.1063/1.3685717 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Kim, Tae-Soo;Ahn, Byung-Jun;Dong, Yanqun;Park, Ki-Nam;Lee, Jin-Gyu;Moon, Youngboo;Yuh, Hwan-Kuk;Choi, Sung-Chul;Lee, Jae-Hak;Hong, Soon-Ku;Song, Jung-Hoon;
12:5:1:46 Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
DOI:10.1063/1.4871870 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Han, Dong-Pyo;Zheng, Dong-Guang;Oh, Chan-Hyoung;Kim, Hyunsung;Shim, Jong-In;Shin, Dong-Soo;Kim, Kyu-Sang;
12:5:1:47 Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
DOI:10.1063/1.4902023 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Han, Dong-Pyo;Kim, Hyunsung;Shim, Jong-In;Shin, Dong-Soo;Kim, Kyu-Sang;
12:5:1:48 Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes
DOI:10.1063/1.4807485 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Yoo, Yang-Seok;Roh, Tae-Moo;Na, Jong-Ho;Son, Sung Jin;Cho, Yong-Hoon;
12:5:1:49 Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate
DOI:10.1063/1.3642998 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Yan, J.;Yu, T. J.;Li, X. B.;Tao, Y. B.;Xu, C. L.;Long, H.;Yang, Z. Y.;Zhang, G. Y.;
12:5:1:50 Photon quenching in InGaN quantum well light emitting devices
DOI:10.1063/1.4816757 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Sarkissian, Raymond;Roberts, Sean T.;Yeh, Ting-Wei;Das, Saptaparna;Bradforth, Stephen E.;O'Brien, John;Dapkus, P. Daniel;
12:5:1:51 Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures
DOI:10.1063/1.4794404 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Olsson, Anders;Aierken, Abuduwayiti;Oksanen, Jani;Suihkonen, Sami;Lipsanen, Harri;Tulkki, Jukka;
12:5:1:52 Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
DOI:10.1063/1.4772669 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Zhang, Yiyun;Zheng, Haiyang;Guo, Enqing;Cheng, Yan;Ma, Jun;Wang, Liancheng;Liu, Zhiqiang;Yi, Xiaoyan;Wang, Guohong;Li, Jinmin;
12:5:1:53 Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes
DOI:10.1007/s11664-013-2704-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Han, Jaecheon;Kang, Gucheol;Kang, Daesung;Moon, Yongtae;Jeong, Hwanhee;Song, June-O;Seong, Tae-Yeon;
12:5:1:54 Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
DOI:10.1063/1.3703313 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Shin, Dong-Soo;Han, Dong-Pyo;Oh, Ji-Yeon;Shim, Jong-In;
12:5:1:55 GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection
DOI:10.1063/1.4829576 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Meyaard, David S.;Lin, Guan-Bo;Ma, Ming;Cho, Jaehee;Schubert, E. Fred;Han, Sang-Heon;Kim, Min-Ho;Shim, HyunWook;Kim, Young Sun;
12:5:1:56 Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures
DOI:10.1063/1.4819226 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Park, Seoung-Hwan;Moon, Yong-Tae;
12:5:1:57 Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes
DOI:10.1063/1.4828780 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Bochkareva, N. I.;Rebane, Y. T.;Shreter, Y. G.;
12:5:1:58 Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model
DOI:10.1063/1.3490232 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Chow, W. W.;Crawford, M. H.;Tsao, J. Y.;Kneissl, M.;
12:5:1:59 Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes
DOI:10.1063/1.4773182 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Nash, G. R.;Mirza, B. I.;
12:5:1:60 Origin of electrons emitted into vacuum from InGaN light emitting diodes
DOI:10.1063/1.4892473 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Iveland, Justin;Piccardo, Marco;Martinelli, Lucio;Peretti, Jacques;Choi, Joo Won;Young, Nathan;Nakamura, Shuji;Speck, James S.;Weisbuch, Claude;
12:5:1:61 Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes
DOI:10.1063/1.4901078 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhou, Kun;Ikeda, Masao;Liu, Jianping;Zhang, Shuming;Li, Deyao;Zhang, Liqun;Cai, Jin;Wang, Hui;Wang, H. B.;Yang, Hui;
12:5:1:62 Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes
DOI:10.1063/1.4828488 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Ryu, Han-Youl;Choi, Won Jun;
12:5:1:63 Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
DOI:10.1103/PhysRevB.89.235124 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Piccardo, Marco;Martinelli, Lucio;Iveland, Justin;Young, Nathan;DenBaars, Steven P.;Nakamura, Shuji;Speck, James S.;Weisbuch, Claude;Peretti, Jacques;
12:5:1:64 Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20(2)over-bar(1)over-bar) GaN substrates
DOI:10.1063/1.4824773 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Pourhashemi, A.;Farrell, R. M.;Hardy, M. T.;Hsu, P. S.;Kelchner, K. M.;Speck, J. S.;DenBaars, S. P.;Nakamura, S.;
12:5:1:65 Auger recombination rates in ZnMgO from first principles
DOI:10.1063/1.3651391 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Heinemann, Markus;Heiliger, Christian;
12:5:1:66 An explanation for invalidity of working currents' derating on improving light-emitting diode devices' reliability
DOI:10.1063/1.4813092 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Liu, Lilin;Yang, Jianfu;Teng, Dongdong;Qi, Shan;Wang, Gang;
12:5:1:67 First-principles study of high-field-related electronic behavior of group-III nitrides
DOI:10.1103/PhysRevB.90.121201 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Yan, Qimin;Kioupakis, Emmanouil;Jena, Debdeep;Van de Walle, Chris G.;
12:5:1:68 Quantum well electron scattering rates through longitudinal optic-phonon dynamical screened interaction: An analytic approach
DOI:10.1063/1.4817242 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Vallone, Marco E.;
12:5:1:69 "U-turn" feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes
DOI:10.1063/1.4903518 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Guan-Bo;Shan, Qifeng;Wang, Yaqi;Li, Ting;Schubert, E. Fred;
12:5:1:70 Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve
DOI:10.1063/1.4770317 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Lin, Guan-Bo;Shan, Qifeng;Birkel, Andrew J.;Cho, Jaehee;Schubert, E. Fred;Crawford, Mary H.;Westlake, Karl R.;Koleske, Daniel D.;
12:5:1:71 Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes
DOI:10.1063/1.4821538 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Meyaard, David S.;Cho, Jaehee;Schubert, E. Fred;Han, Sang-Heon;Kim, Min-Ho;Sone, Cheolsoo;
12:5:1:72 Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current
DOI:10.1063/1.4773588 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Lee, Dong-Yul;Han, Sang-Heon;Lee, Dong Ju;Lee, Jeong Wook;Kim, Dong-Joon;Kim, Young Sun;Kim, Sung-Tae;Leem, Jae-Young;
12:5:1:73 Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method
DOI:10.1016/j.jcrysgro.2010.09.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Wang, C. H.;Ke, C. C.;Chiu, C. H.;Li, J. C.;Kuo, H. C.;Lu, T. C.;Wang, S. C.;
12:5:2:1 Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
DOI:10.1063/1.3531753 JN:APPLIED PHYSICS LETTERS PY:2010
TC:74 AU: Wang, C. H.;Ke, C. C.;Lee, C. Y.;Chang, S. P.;Chang, W. T.;Li, J. C.;Li, Z. Y.;Yang, H. C.;Kuo, H. C.;Lu, T. C.;Wang, S. C.;
12:5:2:2 Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
DOI:10.1063/1.3441373 JN:APPLIED PHYSICS LETTERS PY:2010
TC:89 AU: Choi, Suk;Kim, Hee Jin;Kim, Seong-Soo;Liu, Jianping;Kim, Jeomoh;Ryou, Jae-Hyun;Dupuis, Russell D.;Fischer, Alec M.;Ponce, Fernando A.;
12:5:2:3 Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer
DOI:10.1063/1.3653390 JN:APPLIED PHYSICS LETTERS PY:2011
TC:33 AU: Zhang, Yun Yan;Yin, Yi An;
12:5:2:4 Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
DOI:10.1063/1.3700722 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Lu, Taiping;Li, Shuti;Liu, Chao;Zhang, Kang;Xu, Yiqin;Tong, Jinhui;Wu, Lejuan;Wang, Hailong;Yang, Xiaodong;Yin, Yian;Xiao, Guowei;Zhou, Yugang;
12:5:2:5 Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer
DOI:10.1063/1.4709450 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:20 AU: Xia, Chang Sheng;Li, Z. M. Simon;Lu, Wei;Zhang, Zhi Hua;Sheng, Yang;Hu, Wei Da;Cheng, Li Wen;
12:5:2:6 Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
DOI:10.1063/1.3353995 JN:APPLIED PHYSICS LETTERS PY:2010
TC:30 AU: Kim, Hee Jin;Choi, Suk;Kim, Seong-Soo;Ryou, Jae-Hyun;Yoder, P. Douglas;Dupuis, Russell D.;Fischer, Alec M.;Sun, Kewei;Ponce, Fernando A.;
12:5:2:7 Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier
DOI:10.1063/1.3665252 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Xia, Chang Sheng;Li, Z. M. Simon;Lu, Wei;Zhang, Zhi Hua;Sheng, Yang;Cheng, Li Wen;
12:5:2:8 Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers
DOI:10.1063/1.4804382 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Ryu, Han-Youl;Lee, Jong-Moo;
12:5:2:9 Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well
DOI:10.1007/s00339-014-8607-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Li, Fangzheng;Lin, Hong;Li, Jing;Xie, Nan;Guo, Zhiyou;
12:5:2:10 Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes
DOI:10.1063/1.4731625 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Xia, Chang Sheng;Li, Z. M. Simon;Li, Z. Q.;Sheng, Yang;Zhang, Zhi Hua;Lu, Wei;Cheng, Li Wen;
12:5:2:11 Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer
DOI:10.1063/1.4819879 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kang, Junjie;Li, Hongjian;Li, Zhi;Liu, Zhiqiang;Ma, Ping;Yi, Xiaoyan;Wang, Guohong;
12:5:2:12 Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers
DOI:10.1063/1.4776739 JN:APPLIED PHYSICS LETTERS PY:2013
TC:15 AU: Piprek, Joachim;Li, Z. M. Simon;
12:5:2:13 Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier
DOI:10.1007/s00339-014-8393-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Lei, Yan;Liu, Zhiqiang;He, Miao;Li, Zhi;Kang, Junjie;Yi, Xiaoyan;Wang, Junxi;Li, Jinmin;
12:5:2:14 p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes
DOI:10.1063/1.4773187 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Liu, Zhiqiang;Ma, Jun;Yi, Xiaoyan;Guo, Enqing;Wang, Liancheng;Wang, Junxi;Lu, Na;Li, Jinmin;Ferguson, Ian;Melton, Andrew;
12:5:2:15 Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes
DOI:10.1063/1.4747802 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Lin, Ray-Ming;Yu, Sheng-Fu;Chang, Shoou-Jinn;Chiang, Tsung-Hsun;Chang, Sheng-Po;Chen, Chang-Ho;
12:5:2:16 Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
DOI:10.1063/1.4773558 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Li, Hongjian;Kang, Junjie;Li, Panpan;Ma, Jun;Wang, Hui;Liang, Meng;Li, Zhicong;Li, Jing;Yi, Xiaoyan;Wang, Guohong;
12:5:2:17 Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes
DOI:10.1063/1.4774091 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Xia, Chang Sheng;Li, Z. M. Simon;Li, Z. Q.;Sheng, Y.;
12:5:2:18 Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
DOI:10.1063/1.4816716 JN:AIP ADVANCES PY:2013
TC:0 AU: Kang, Junjie;Li, Zhi;Li, Hongjian;Liu, Zhiqiang;Ma, Ping;Yi, Xiaoyan;Wang, Guohong;
12:5:2:19 Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
DOI:10.1063/1.4873395 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kyaw, Zabu;Zhang, Zi-Hui;Liu, Wei;Tan, Swee Tiam;Ju, Zhen Gang;Zhang, Xue Liang;Ji, Yun;Hasanov, Namig;Zhu, Binbin;Lu, Shunpeng;Zhang, Yiping;Teng, Jing Hua;Wei, Sun Xiao;Demir, Hilmi Volkan;
12:5:2:20 Sensitivity analysis of electron leakage in III-nitride light-emitting diodes
DOI:10.1063/1.4799672 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Piprek, Joachim;Li, Z. M. Simon;
12:5:2:21 Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer
DOI:10.1007/s00339-013-7923-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Xiong, Jian-Yong;Xu, Yi-Qin;Ding, Bin-Bin;Zhao, Fang;Song, Jing-Jing;Zheng, Shu-Wen;Zhang, Li;Zhang, Tao;Fan, Guang-Han;
12:5:2:22 Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition
DOI:10.1063/1.4824461 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Xiong, Jian-Yong;Zhao, Fang;Ding, Bin-Bin;Zheng, Shu-Wen;Zhang, Tao;Fan, Guang-Han;
12:5:2:23 Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes
DOI:10.1063/1.3681797 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Zhang, Ning;Liu, Zhe;Wei, Tongbo;Zhang, Lian;Wei, Xuecheng;Wang, Xiaodong;Lu, Hongxi;Li, Jinmin;Wang, Junxi;
12:5:2:24 On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes
DOI:10.1063/1.4839417 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Xia, Chang Sheng;Li, Z. M. Simon;Sheng, Yang;
12:5:2:25 Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer
DOI:10.1007/s00339-014-8284-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Lu, Taiping;Ma, Ziguang;Du, Chunhua;Fang, Yutao;Chen, Fangsheng;Jiang, Yang;Wang, Lu;Jia, Haiqiang;Chen, Hong;
12:5:2:26 Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers
DOI:10.1007/s00339-013-8069-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Xiong, Jian-Yong;Xu, Yi-Qin;Zheng, Shu-Wen;Fan, Guang-Han;Zhang, Tao;
12:5:2:27 Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
DOI:10.1063/1.3658388 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Hwang, Sunyong;Ha, Woo Jin;Kim, Jong Kyu;Xu, Jiuru;Cho, Jaehee;Schubert, E. Fred;
12:5:2:28 Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
DOI:10.1063/1.4871090 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Du, Chunhua;Ma, Ziguang;Zhou, Junming;Lu, Taiping;Jiang, Yang;Jia, Haiqiang;Liu, Wuming;Chen, Hong;
12:5:2:29 Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes
DOI:10.1063/1.3679180 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Kuo, Yen-Kuang;Chen, Yu-Han;Chang, Jih-Yuan;Tsai, Miao-Chan;
12:5:2:30 Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer
DOI:10.1063/1.4801475 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lu, Yu-Hsuan;Fu, Yi-Keng;Huang, Shyh-Jer;Su, Yan-Kuin;Xuan, Rong;Pilkuhn, Manfred H.;
12:5:2:31 Tunability of InGaN/GaN quantum well light emitting diodes through current
DOI:10.1063/1.4813225 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Biswas, Dipankar;Panda, Siddhartha;
12:5:2:32 Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes
DOI:10.1063/1.4900496 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Tawfik, Wael Z.;Hyeon, Gil Yong;Lee, June Key;
12:5:2:33 Simulation of quantum cascade lasers
DOI:10.1063/1.3660207 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Li, Z-M Simon;Li, Ying-Ying;Ru, Guo-Ping;
12:5:2:34 Drooping as a simple characterization tool for extraction efficiency and optical losses in light emitting diodes
DOI:10.1063/1.3494085 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Oksanen, Jani;Tulkki, Jukka;
12:5:2:35 Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes
DOI:10.1063/1.4868675 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Lu, Yu-Hsuan;Fu, Yi-Keng;Huang, Shyh-Jer;Su, Yan-Kuin;Wang, Kang L.;Pilkuhn, Manfred H.;Chu, Mu-Tao;
12:5:2:36 Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer (vol 99, 221103, 2011)
DOI:10.1063/1.4752472 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Zhang, Yun Yan;Yin, Yi An;
12:5:2:37 Effect of p-AlxGa1-xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes
DOI:10.1116/1.4757289 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Kim, Ki-Hyun;Lee, Sang-Won;Lee, Sung-Nam;Kim, Jihoon;
12:5:3:1 Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
DOI:10.1063/1.4747532 JN:APPLIED PHYSICS LETTERS PY:2012
TC:24 AU: Wu, Yuh-Renn;Shivaraman, Ravi;Wang, Kuang-Chung;Speck, James S.;
12:5:3:2 The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
DOI:10.1063/1.4896103 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:8 AU: Yang, Tsung-Jui;Shivaraman, Ravi;Speck, James S.;Wu, Yuh-Renn;
12:5:3:3 Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
DOI:10.1063/1.3694967 JN:APPLIED PHYSICS LETTERS PY:2012
TC:31 AU: Akyol, F.;Nath, D. N.;Krishnamoorthy, S.;Park, P. S.;Rajan, S.;
12:5:3:4 Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
DOI:10.1103/PhysRevB.83.115321 JN:PHYSICAL REVIEW B PY:2011
TC:33 AU: Watson-Parris, D.;Godfrey, M. J.;Dawson, P.;Oliver, R. A.;Galtrey, M. J.;Kappers, M. J.;Humphreys, C. J.;
12:5:3:5 Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes
DOI:10.1063/1.4804415 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Li, Chi-Kang;Yang, Hung-Chih;Hsu, Ta-Cheng;Shen, Yu-Jiun;Liu, Ai-Sen;Wu, Yuh-Renn;
12:5:3:6 Influence of polarity on carrier transport in semipolar (20(21)over-bar) and (20(2)over-bar1) multiple-quantum-well light-emitting diodes
DOI:10.1063/1.4726106 JN:APPLIED PHYSICS LETTERS PY:2012
TC:18 AU: Kawaguchi, Yoshinobu;Huang, Chia-Yen;Wu, Yuh-Renn;Yan, Qimin;Pan, Chih-Chien;Zhao, Yuji;Tanaka, Shinichi;Fujito, Kenji;Feezell, Daniel;Van de Walle, Chris G.;DenBaars, Steven P.;Nakamura, Shuji;
12:5:3:7 Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
DOI:10.1063/1.4818794 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Pal, J.;Migliorato, M. A.;Li, C. -K.;Wu, Y. -R.;Crutchley, B. G.;Marko, I. P.;Sweeney, S. J.;
12:5:3:8 Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
DOI:10.1063/1.3302458 JN:APPLIED PHYSICS LETTERS PY:2010
TC:30 AU: Han, Sang-Heon;Cho, Chu-Young;Lee, Sang-Jun;Park, Tae-Young;Kim, Tae-Hun;Park, Seung Hyun;Kang, Sang Won;Kim, Je Won;Kim, Yong Chun;Park, Seong-Ju;
12:5:3:9 Comparative analysis of 20(2)over-bar1 and 20(2)over-bar(1)over-bar semipolar GaN light emitting diodes using atom probe tomography
DOI:10.1063/1.4812363 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Shivaraman, Ravi;Kawaguchi, Y.;Tanaka, S.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:5:3:10 Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography
DOI:10.1116/1.4893976 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Liu, Fang;Huang, Li;Davis, Robert F.;Porter, Lisa M.;Schreiber, Daniel K.;Kuchibatla, Satyanarayana V. N. T.;Shutthanandan, Vaithiyalingam;Thevuthasan, Suntharampillai;Preble, Edward A.;Paskova, Tania;Evans, Keith R.;
12:5:3:11 Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
DOI:10.1103/PhysRevB.88.214103 JN:Algarabel, Pedro/K-8583-2014; Ibarra, Manuel Ricardo/K-1150-2014; Rodriguez Fernandez, Jesus/L-7960-2014;Morellon, Luis/0000-0003-3724-508X; Marcano Aguado,;Noelia/0000-0002-5331-9758; PY:100 TC:arabel, Pedro/0000-0002-4698-3378;;Ibarra, Manuel Ricardo/0000-0003-0681-8260;;0;0;0;0;0;1098-0121;WOS:000332161300004;;;J;Minar, Jiri;Gremaud, Benoit;From antiferromagnetic ordering to magnetic textures in the;two-dimensional Fermi-Hubbard model with synthetic spin-orbit;interactions;PHYSICAL REVIEW B;88;23;235130;10.1103/PhysRevB.88.235130;DEC 30 2013;2013;We study the interacting Fermi-Hubbard model in two spatial dimensions;with synthetic gauge coupling of the spin-orbit Rashba type, at;half-filling. Using real-space mean-field theory, we numerically;determine the phase as a function of the interaction strength for;different values of the gauge-field parameter. For a fixed value of the;gauge field, we observe that when the strength of the repulsive;interaction is increased, the system enters into an antiferromagnetic;phase, then undergoes a first-order phase transition to a noncollinear;magnetic phase. Depending on the gauge-field parameter, this phase;further evolves to the one predicted from the effective Heisenberg model;obtained in the limit of large interaction strength. We explain the;presence of the antiferromagnetic phase at small interaction from the;computation of the spin-spin susceptibility, which displays a divergence;at low temperatures for the antiferromagnetic ordering. We discuss, how;the divergence is related to the nature of the underlying Fermi;surfaces. Finally, the fact that the first-order phase transitions for;different gauge-field parameters occur at unrelated critical interaction;strengths arises from a Hofstadter-like situation, i.e., for different;magnetic phases, the mean-field Hamiltonians have different;translational symmetries.;1;0;0;0;1;1098-0121;WOS:000332163500001;;;J;Rochal, S. B.;Lorman, V. L.;Yuzyuk, Yu. I.;Two-dimensional elasticity determines the low-frequency dynamics of;single-and double-walled carbon nanotubes;PHYSICAL REVIEW B;88;23;235435;10.1103/PhysRevB.88.235435;DEC 30 2013;2013;We develop a continuous theory of low-frequency dynamics for nanotubes;with walls constituted by singleatom monolayer, the topological;elasticity of which is not related to its vanishing macroscopic;thickness. The applicability region of the theory proposed includes all;truly two-dimensional materials such as graphene and MoS2. New;comprehensive interpretation and analytical expressions for;low-frequency modes in single-walled carbon nanotube (SWCNT) are given.;The theory unambiguously relates the radial breathing modes of SWCNT and;breathinglike modes of the double-walled carbon nanotube (DWCNT). The;existing Raman data on DWCNTs are fitted better than in the frame of;previous models.;Yuzyuk, Yuri/A-1285-2009;0;0;0;0;0;1098-0121;WOS:000332163500006;;;J;Wagner, Markus R.;Callsen, Gordon;Reparaz, Juan S.;Kirste, Ronny;Hoffmann, Axel;Rodina, Anna V.;Schleife, Andre;Bechstedt, Friedhelm;Phillips, Matthew R.;Effects of strain on the valence band structure and exciton-polariton;energies in ZnO;PHYSICAL REVIEW B;88;23;235210;10.1103/PhysRevB.88.235210;DEC 30 2013;2013;The uniaxial stress dependence of the band structure and the;exciton-polariton transitions in wurtzite ZnO is thoroughly studied;using modern first-principles calculations based on the HSE+ G(0)W(0);approach, k center dot p modeling using the deformation potential;framework, and polarized photoluminescence measurements. The ordering of;the valence bands [A(Gamma(7)), B(Gamma(9)), C(Gamma(7))] is found to be;robust even for high uniaxial and biaxial strains. Theoretical results;for the uniaxial pressure coefficients and splitting rates of the A, B,;and C valence bands and their optical transitions are obtained including;the effects of the spin-orbit interaction. The excitonic deformation;potentials are derived and the stress rates for hydrostatic pressure are;determined based on the results for uniaxial and biaxial stress. In;addition, the theory for the stress dependence of the exchange;interaction and longitudinal-transversal splitting of the exciton;polaritons is developed using the basic exciton functions of the;quasicubic approximation and taking the interaction between all exciton;states into account. It is shown that the consideration of these effects;is crucial for an accurate description of the stress dependence of the;optical spectra in ZnO. The theoretical results are compared to;polarized photoluminescence measurements of different ZnO substrates as;function of uniaxial pressure and experimental values reported in the;literature demonstrating an excellent agreement with the computed;pressure coefficients.;Wagner, Markus/A-3582-2009;Wagner, Markus/0000-0002-7367-5629;3;0;1;0;3;1098-0121;WOS:000332163500004;;;J;Zhang, Jian-Min;Ming, Wenmei;Huang, Zhigao;Liu, Gui-Bin;Kou, Xufeng;Fan, Yabin;Wang, Kang L.;Yao, Yugui;Stability, electronic, and magnetic properties of the magnetically doped;topological insulators Bi2Se3, Bi2Te3, and Sb2Te3;PHYSICAL REVIEW B;88;23;235131;10.1103/PhysRevB.88.235131;DEC 30 2013;2013;Magnetic interaction with the gapless surface states in a topological;insulator (TI) has been predicted to give rise to a few exotic quantum;phenomena. However, the effective magnetic doping of TI is still;challenging in the experiment. Using first-principles calculations, the;magnetic doping properties (V, Cr, Mn, and Fe) in three strong TIs;(Bi2Se3, Bi2Te3, and Sb2Te3) are investigated. We find that for all;three TIs the cation-site substitutional doping is most energetically;favorable with the anion-rich environment as the optimal growth;condition. Further, our results show that under the nominal doping;concentration of 4%, Cr- and Fe-doped Bi2Se3, Bi2Te3, and Cr-doped;Sb2Te3 remain as insulators, while all the V-and Mn-doped TIs, and;Fe-doped Sb2Te3 become metal. We also show that the magnetic interaction;of Cr-doped Bi2Se3 tends to be ferromagnetic, while Fe-doped Bi2Se3 is;likely to be antiferromagnetic. Finally, we estimate the magnetic;coupling and the Curie temperature for the promising ferromagnetic;insulator (Cr-doped Bi2Se3) by Monte Carlo simulation. These findings;may provide important guidance for the magnetism incorporation in TIs;experimentally.;Yao, Yugui/A-8411-2012; Liu, Gui-Bin/A-2724-2009; Zhang, Jian-Min/A-7757-2012;Liu, Gui-Bin/0000-0001-5935-7555;;4;0;0;0;4;1098-0121;WOS:000332163500002;;;J;Zitko, R.;Hansen, D.;Perepelitsky, E.;Mravlje, J.;Georges, A.;Shastry, B. S.;Extremely correlated Fermi liquid theory meets dynamical mean-field;theory: Analytical insights into the doping-driven Mott transition;PHYSICAL REVIEW B;88;23;235132;10.1103/PhysRevB.88.235132;DEC 30 2013;2013;We consider a doped Mott insulator in the large dimensionality limit;within both the recently developed extremely correlated Fermi liquid;(ECFL) theory and the dynamical mean-field theory (DMFT). We show that;the general structure of the ECFL sheds light on the rich frequency;dependence of the DMFT self-energy. Using the leading Fermi liquid form;of the two key auxiliary functions introduced in the ECFL theory, we;obtain an analytical ansatz, which provides a good quantitative;description of the DMFT self-energy down to hole doping level delta;similar or equal to 0.2. In particular, the deviation from Fermi liquid;behavior and the corresponding particle-hole asymmetry developing at a;low-energy scale are well reproduced by this ansatz. The DMFT being;exact at large dimensionality, our study also provides a benchmark of;the ECFL in this limit. We find that the main features of the;self-energy and spectral line shape are well reproduced by the ECFL;calculations in the O(lambda(2)) minimal scheme, for not too low doping;level delta greater than or similar to 0.3. The DMFT calculations;reported here are performed using a state-of-the-art numerical;renormalization-group impurity solver, which yields accurate results;down to an unprecedentedly small doping level delta less than or similar;to 0.001.;1;0;0;0;1;1098-0121;WOS:000332163500003;;;J;Barros, M. S. M.;Nascimento Junior, A. J.;Macedo-Junior, A. F.;Ramos, J. G. G. S.;Barbosa, A. L. R.;Open chaotic Dirac billiards: Weak (anti)localization, conductance;fluctuations, and decoherence;PHYSICAL REVIEW B;88;24;245133;10.1103/PhysRevB.88.245133;DEC 30 2013;2013;In this paper, we investigate the transport properties of open chaotic;Dirac billiards and their intrinsic (chiral universal) symmetry classes.;The prominent examples of these systems are some categories of;topological insulators and graphene structures. We extend the;diagrammatic method of integration over the unitary group and obtain;analytical results for the semiclassical limit and for the high quantum;limit in the universal regime. We show the emergence of quantum;fingerprints characteristic of the chiral symmetries, which are;amplified in the presence of a single open channel in each electronic;terminals. We compare the chaotic Dirac billiards with the "Schrodinger;billiards" in a myriad of regimes, exhibiting the differences between;the chiral universal classes and the Wigner-Dyson classes. Two numerical;methods were used to confirm our analytical findings, yielding also the;distribution of conductances. We also investigate analytically the;effect of dephasing using the characteristic time scales of the chaotic;billiards and we show the appearance of peculiar numbers of chaos.;0;0;0;0;0;1098-0121;WOS:000332164700008;;;J;Cooke, D. G.;Jepsen, P. Uhd;Lek, Jun Yan;Lam, Yeng Ming;Sy, F.;Dignam, M. M.;Picosecond dynamics of internal exciton transitions in CdSe nanorods;PHYSICAL REVIEW B;88;24;241307;10.1103/PhysRevB.88.241307;DEC 30 2013;2013;The picosecond dynamics of excitons in colloidal CdSe nanorods are;directly measured via their 1s to 2p-like internal transitions by;ultrabroadband terahertz spectroscopy. Broadened absorption peaks from;both the longitudinal and transverse states are observed at 8.5 and 11;THz, respectively. The onset of exciton-LO phonon coupling appears as a;bleach in the optical conductivity spectra at the LO phonon energy for;times > 1 ps after excitation. Simulations show a suppressed exciton;temperature due to thermally excited hole states being rapidly captured;onto ligands or unpassivated surface states. The relaxation kinetics are;manipulated and the longitudinal transition is quenched by surface;ligand exchange with hole capturing pyridine.;Lam, Yeng Ming/A-2230-2011;Lam, Yeng Ming/0000-0001-9390-8074;1;0;0;0;1;1098-0121;WOS:000332164700002;;;J;Cote, R.;Barrette, Manuel;Validity of the two-component model of bilayer and trilayer graphene in;a magnetic field;PHYSICAL REVIEW B;88;24;245445;10.1103/PhysRevB.88.245445;DEC 30 2013;2013;The eigenstates of an electron in the chiral two-dimensional electron;gas (C2DEG) formed in an AB-stacked bilayer or an ABC-stacked trilayer;graphene is a spinor with four or six components, respectively. These;components give the amplitude of the wave function on the four or six;carbon sites in the unit cell of the lattice. In the tight-binding;approximation, the eigenenergies are thus found by diagonalizing a 4 x 4;or a 6 x 6 matrix. In the continuum approximation where the electron;wave vector k << 1/a(0), with a(0) the lattice constant of the graphene;sheets, a common approximation is the two-component (or "two-band");model(1) where the eigenstates for the bilayer and trilayer systems are;described by a two-component spinor that gives the amplitude of the wave;function on the two sites with low energy vertical bar E vertical bar <<;gamma(1) where gamma(1) is the hopping energy between sites that are;directly above one another in adjacent layers. The two-component model;has been used extensively to study the phase diagram of the C2DEG in a;magnetic field as well as its transport and optical properties. In this;paper, we use a numerical approach to compute the eigenstates and Landau;level energies of the full tight-binding model in the continuum;approximation and compare them with the prediction of the two-component;model when the magnetic field or an electrical bias between the;outermost layers is varied. Our numerical analysis shows that the;two-component model is a good approximation for bilayer graphene in a;wide range of magnetic field and bias but mostly for Landau level M = 0.;The applicability of the two-component model in trilayer graphene, even;for level M = 0, is much more restricted. In this case, the;two-component model fails to reproduce some of the level crossings that;occur between the sublevels of M = 0.;3;0;0;0;3;1098-0121;WOS:000332164700013;;;J;Gammelmark, Soren;Zinner, Nikolaj Thomas;Dipoles on a two-leg ladder;PHYSICAL REVIEW B;88;24;245135;10.1103/PhysRevB.88.245135;DEC 30 2013;2013;We study polar molecules with long-range dipole-dipole interactions;confined to move on a two-leg ladder for different orientations of the;molecular dipole moments with respect to the ladder. Matrix product;states are employed to calculate the many-body ground state of the;system as a function of lattice filling fractions, perpendicular hopping;between the legs, and dipole interaction strength. We show that the;system exhibits zigzag ordering when the dipolar interactions are;predominantly repulsive. As a function of dipole moment orientation with;respect to the ladder, we find that there is a critical angle at which;ordering disappears. This angle is slightly larger than the angle at;which the dipoles are noninteracting along a single leg. This behavior;should be observable using current experimental techniques.;2;0;0;0;2;1098-0121;WOS:000332164700010;;;J;Hofer, Patrick P.;Buettiker, Markus;Emission of time-bin entangled particles into helical edge states;PHYSICAL REVIEW B;88;24;241308;10.1103/PhysRevB.88.241308;DEC 30 2013;2013;We propose a single-particle source which emits into the helical edge;states of a two-dimensional quantum spin Hall insulator. Without;breaking time-reversal symmetry, this source acts like a pair of;noiseless single-electron emitters which each inject separately into a;chiral edge state. By locally breaking time-reversal symmetry, the;source becomes a proper single-particle emitter which exhibits shot;noise. Due to its intrinsic helicity, this system can be used to produce;time-bin entangled pairs of electrons in a controlled manner. The noise;created by the source contains information on the emitted wave packets;and is proportional to the concurrence of the emitted state.;Hofer, Patrick/O-1062-2013;Hofer, Patrick/0000-0001-6036-7291;7;0;0;0;7;1098-0121;WOS:000332164700003;;;J;Leon, C.;Latge, A.;Half-metallicity study of graphene nanoribbon bilayers under external;fields;PHYSICAL REVIEW B;88;24;245446;10.1103/PhysRevB.88.245446;DEC 30 2013;2013;Here we discuss the possibility of modulating energy gaps of graphene;nanoribbon bilayers, with zigzag edges, by applying electric fields. The;system is disposed in the Bernal configuration and is described by a;Hubbard Hamiltonian. We follow a Hartree-Fock mean-field theory to;calculate the electronic properties of the system. Under the action of a;transversal electric field, half-metallicity is found: One of the spin;bands increases the gap energy as the intensity of the field is;increased whereas the other decreases until achieving a null gap. For a;particular electric field range, the system exhibits metallic and;semiconducting features depending on the spin band. Half-metallicity is;enhanced due to an extra effect for the bilayer system: The presence of;a robust plateau-like in the gap versus field intensity diagram, for an;intermediate energy gap value of the semiconducting band. The;correlation of the gap plateau with local magnetizations and charge;numbers in the two layers is investigated. Further applied gate voltages;on the ribbons are considered to investigate the possibilities of;getting new physical responses for tilted electric field configurations.;Possible spintronic applications can be driven based on the differential;spin-band features achieved.;1;0;0;0;1;1098-0121;WOS:000332164700014;;;J;Lundgren, Rex;Fuji, Yohei;Furukawa, Shunsuke;Oshikawa, Masaki;Entanglement spectra between coupled Tomonaga-Luttinger liquids:;Applications to ladder systems and topological phases;PHYSICAL REVIEW B;88;24;245137;10.1103/PhysRevB.88.245137;DEC 30 2013;2013;We study the entanglement spectrum (ES) and entropy between two coupled;Tomonaga-Luttinger liquids (TLLs) on parallel periodic chains. This;problem gives access to the entanglement properties of various;interesting systems, such as spin ladders as well as two-dimensional;topological phases. By expanding interchain interactions to quadratic;order in bosonic fields, we are able to calculate the ES for both gapped;and gapless systems using only methods for free theories. In certain;gapless phases of coupled nonchiral TLLs, we interestingly find an ES;with a dispersion relation proportional to the square root of the;subsystem momentum, which we relate to a long-range interaction in the;entanglement Hamiltonian. We numerically demonstrate the emergence of;this unusual dispersion in a model of hard-core bosons on a ladder. In;gapped phases of coupled nonchiral TLLs, which are relevant to spin;ladders and topological insulators, we show that the ES consists of;linearly dispersing modes, which resembles the spectrum of a;single-chain TLL but is characterized by a modified TLL parameter. Based;on a calculation for coupled chiral TLLs, we are also able to provide a;very simple proof for the correspondence between the ES and the;edge-state spectrum in quantum Hall systems consistent with previous;numerical and analytical studies.;Oshikawa, Masaki/F-4992-2011; Furukawa, Shunsuke/E-4416-2013;Oshikawa, Masaki/0000-0002-7637-7432;;6;0;0;0;6;1098-0121;WOS:000332164700012;;;J;Moon, Pilkyung;Koshino, Mikito;Optical properties of the Hofstadter butterfly in the moire superlattice;PHYSICAL REVIEW B;88;24;241412;10.1103/PhysRevB.88.241412;DEC 30 2013;2013;We investigate the optical absorption spectrum and the selection rule;for the Hofstadter butterfly in twisted bilayer graphene under magnetic;fields. We demonstrate that the absorption spectrum exhibits a;self-similar recursive pattern reflecting the fractal nature of the;energy spectrum. We find that the optical selection rule has a nested;self-similar structure as well, and it is governed by the conservation;of the total angular momentum summed over different hierarchies.;Moon, Pilkyung/A-2930-2010;Moon, Pilkyung/0000-0003-3994-4255;2;0;0;0;2;1098-0121;WOS:000332164700005;;;J;Poirier, Mario;de Lafontaine, Mathieu;Bourbonnais, Claude;Pouget, Jean-Paul;Charge, spin, and lattice effects in the spin-Peierls ground state of;MEM(TCNQ)(2);PHYSICAL REVIEW B;88;24;UNSP 245134;10.1103/PhysRevB.88.245134;DEC 30 2013;2013;We report an investigation of charge, spin, and lattice effects in the;spin-Peierls state of the organic compound MEM(TCNQ)(2). The 16.5-GHz;dielectric function along the chain axis shows an enhancement below the;spin-Peierls transition temperature near 18 K consistent with the charge;coupling to the elastic strain involved in the transition. The velocity;of two elastic modes perpendicular to the chain axis presents anomalies;at the transition, which can be explained with a Landau free-energy;model including a linear-quadratic coupling energy term between the;appropriate elastic strain e and the spin-Peierls magnetic gap Delta(q).;The analysis of the dielectric and elastic features aims toward an order;parameter with an associated critical exponent beta similar to 0.36,;which is similar to the three-dimensional behavior seen in other;spin-Peierls materials. All these effects studied in a magnetic field up;to 18 Teslas appear also compatible with a mean-field model of a;quasi-one-dimensional spin-Peierls system.;0;0;0;0;0;1098-0121;WOS:000332164700009;;;J;Syzranov, S. V.;Rodionov, Ya. I.;Kugel, K. I.;Nori, F.;Strongly anisotropic Dirac quasiparticles in irradiated graphene;PHYSICAL REVIEW B;88;24;241112;10.1103/PhysRevB.88.241112;DEC 30 2013;2013;We study quasiparticle dynamics in graphene exposed to a linearly;polarized electromagnetic wave of very large intensity. We demonstrate;that low-energy transport in such system can be described by an;effective time-independent Hamiltonian, characterized by multiple Dirac;points in the first Brillouin zone. Around each Dirac point the spectrum;is anisotropic: the velocity along the polarization of the radiation;significantly exceeds the velocity in the perpendicular direction.;Moreover, in some of the points the transverse velocity oscillates as a;function of the radiation intensity. We find that the conductance of a;graphene p-n junction in the regime of strong irradiation depends on the;polarization as G(theta) proportional to vertical bar sin theta vertical;bar(3/2), where theta is the angle between the polarization and the p-n;interface, and oscillates as a function of the radiation intensity.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332164700001;;;J;Toke, Csaba;Particle-hole symmetry and bifurcating ground-state manifold in the;quantum Hall ferromagnetic states of multilayer graphene;PHYSICAL REVIEW B;88;24;241411;10.1103/PhysRevB.88.241411;DEC 30 2013;2013;The orbital structure of the quantum Hall ferromagnetic states in the;zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA,;etc. stackings) is determined by the exchange interaction with all;levels, including deep-lying states in the Dirac sea. This exchange;field favors orbitally coherent states with a U(1) orbital symmetry if;the filling factor nu is not a multiple of the number of layers. If;electrons fill the orbital sector of a fixed spin/valley component to;one-half, e.g., at nu = +/- 3, +/- 1 in the bilayer and at nu = +/- 2,;+/- 6 in the ABCA four-layer, there is a transition to a Z(2) x U(1);manifold. For weak interaction, the structure in the zero-energy Landau;band compensates for the different exchange interaction on the;sublattices in the Landau orbitals; on the other side, the ground state;comes in two copies that distribute charge on the sublattices;differently. We expect a sequence of similar bifurcations in multilayers;of Bernal stacking.;1;1;0;0;1;1098-0121;WOS:000332164700004;;;J;Tonegawa, S.;Hashimoto, K.;Ikada, K.;Tsuruhara, Y.;Lin, Y. -H.;Shishido, H.;Haga, Y.;Matsuda, T. D.;Yamamoto, E.;Onuki, Y.;Ikeda, H.;Matsuda, Y.;Shibauchi, T.;Cyclotron resonance study of quasiparticle mass and scattering rate in;the hidden-order and superconducting phases of URu2Si2;PHYSICAL REVIEW B;88;24;245131;10.1103/PhysRevB.88.245131;DEC 30 2013;2013;The observation of cyclotron resonance in ultraclean crystals of URu2Si2;[S. Tonegawa et al., Phys. Rev. Lett. 109, 036401 (2012)] provides;another route besides quantum oscillations to the determination of the;bulk electronic structure in the hidden-order phase. We report detailed;analyses of the resonance lines, which fully resolve the cyclotron mass;structure of the main Fermi surface sheets. A particular focus is given;to the anomalous splitting of the sharpest resonance line near the [110];direction under in-plane magnetic-field rotation, which implies peculiar;electronic structure in the hidden-order phase. The results under the;field rotation from [110] toward [001] direction reveal that the;splitting is a robust feature against field tilting from the basal;plane. This is in sharp contrast to the reported frequency branch alpha;in the quantum oscillation experiments showing a three-fold splitting;that disappears by a small field tilt, which can be explained by the;magnetic breakdown between the large hole sphere and small electron;pockets. Our analysis of the cyclotron resonance profiles reveals that;the heavier branch of the split line has a larger scattering rate,;providing evidence for the existence of hot-spot regions along the [110];direction. These results are consistent with the broken fourfold;rotational symmetry in the hidden-order phase, which can modify the;interband scattering in an asymmetric manner. We also extend our;measurements down to 0.7 K, which results in the observation of;cyclotron resonance in the superconducting state, where novel effects of;vortex dynamics may enter. We find that the cyclotron mass undergoes no;change in the superconducting state. In contrast, the quasiparticle;scattering rate shows a rapid decrease below the vortex-lattice melting;transition temperature, which supports the formation of quasiparticle;Bloch state in the vortex lattice phase.;Hashimoto, Kenichiro/C-4925-2012; Shibauchi, Takasada/B-9349-2008;Shibauchi, Takasada/0000-0001-5831-4924;2;1;0;0;2;1098-0121;WOS:000332164700006;;;J;Wang, Chenjie;Levin, Michael;Weak symmetry breaking in two-dimensional topological insulators;PHYSICAL REVIEW B;88;24;245136;10.1103/PhysRevB.88.245136;DEC 30 2013;2013;We show that there exist two-dimensional (2D) time-reversal invariant;fractionalized insulators with the property that both their boundary;with the vacuum and their boundary with a topological insulator can be;fully gapped without breaking time-reversal or charge conservation;symmetry. This result leads us to an apparent paradox: we consider a;geometry in which a disklike region made up of a topological insulator;is surrounded by an annular strip of a fractionalized insulator, which;is, in turn, surrounded by the vacuum. If we gap both boundaries of the;strip, we naively obtain an example of a gapped interface between a;topological insulator and the vacuum that does not break any;symmetries-an impossibility. The resolution of this paradox is that this;system spontaneously breaks time-reversal symmetry in an unusual way,;which we call weak symmetry breaking. In particular, we find that the;only order parameters that are sensitive to the symmetry breaking are;nonlocal operators that describe quasiparticle tunneling processes;between the two edges of the strip; expectation values of local order;parameters vanish exponentially in the limit of a wide strip. Also, we;find that the symmetry breaking in our system comes with a ground-state;degeneracy, but this ground-state degeneracy is topologically protected,;rather than symmetry protected. We show that this kind of symmetry;breaking can also occur at the edge of 2D fractional topological;insulators.;Wang, Chenjie/G-8652-2013;2;0;0;0;2;1098-0121;WOS:000332164700011;;;J;Zhang, Qingyun;Cheng, Yingchun;Gan, Li-Yong;Schwingenschloegl, Udo;Giant valley drifts in uniaxially strained monolayer MoS2;PHYSICAL REVIEW B;88;24;245447;10.1103/PhysRevB.88.245447;DEC 30 2013;2013;Using first-principles calculations, we study the electronic structure;of monolayer MoS2 under uniaxial strain. We show that the energy valleys;drift far off the corners of the Brillouin zone (K points), about 12;times the amount observed in graphene. Therefore, it is essential to;take this effect into consideration for a correct identification of the;band gap. The system remains a direct band gap semiconductor up to 4%;uniaxial strain, while the size of the band gap decreases from 1.73 to;1.54 eV. We also demonstrate that the splitting of the valence bands due;to inversion symmetry breaking and spin-orbit coupling is not sensitive;to strain.;Cheng, Yingchun/C-8895-2011; Gan, Liyong/D-8113-2013;3;0;0;0;3;1098-0121;WOS:000332164700015;;;J;Zhang, Wentao;Smallwood, Christopher L.;Jozwiak, Chris;Miller, Tristan L.;Yoshida, Yoshiyuki;Eisaki, Hiroshi;Lee, Dung-Hai;Lanzara, Alessandra;Signatures of superconductivity and pseudogap formation in;nonequilibrium nodal quasiparticles revealed by ultrafast angle-resolved;photoemission;PHYSICAL REVIEW B;88;24;245132;10.1103/PhysRevB.88.245132;DEC 30 2013;2013;We use time- and angle-resolved photoemission to measure the nodal;nonequilibrium electronic states in various dopings of;Bi2Sr2CaCu2O8+delta. We find that the initial pump-induced transient;signal of these ungapped states is strongly affected by the onset of the;superconducting gap at T-c, superconducting pairing fluctuations at T-p,;and the pseudogap at T*. Moreover, T-p marks a suggestive threshold in;the fluence-dependent transient signal, with the appearance of a;critical fluence below T-p that corresponds to the energy required to;break apart all Cooper pairs. These results challenge the notion of a;nodal-antinodal dichotomy in cuprate superconductors by establishing a;link between nodal quasiparticles and the cuprate phase diagram.;ZHANG, Wentao/B-3626-2011;4;1;0;0;4;1098-0121;WOS:000332164700007;;;J;Svintsov, D.;Vyurkov, V.;Ryzhii, V.;Otsuji, T.;Hydrodynamic electron transport and nonlinear waves in graphene;PHYSICAL REVIEW B;88;24;245444;10.1103/PhysRevB.88.245444;DEC 27 2013;2013;We derive the system of hydrodynamic equations governing the collective;motion of massless fermions in graphene. The obtained equations;demonstrate the lack of Galilean and Lorentz invariance and contain a;variety of nonlinear terms due to the quasirelativistic nature of;carriers. Using these equations, we show the possibility of soliton;formation in an electron plasma of gated graphene. The quasirelativistic;effects set an upper limit for soliton amplitude, which marks graphene;out of conventional semiconductors. The mentioned noninvariance of the;equations is revealed in spectra of plasma waves in the presence of;steady flow, which no longer obey the Doppler shift. The feasibility of;plasma-wave excitation by direct current in graphene channels is also;discussed.;Svintsov, Dmitry/I-1755-2014;0;0;0;0;0;1098-0121;WOS:000332160400002;;;J;Yan, Jun;Norskov, Jens K.;Calculated formation and reaction energies of 3d transition metal oxides;using a hierachy of exchange-correlation functionals;PHYSICAL REVIEW B;88;24;245204;10.1103/PhysRevB.88.245204;DEC 27 2013;2013;The formation and oxidation reaction energies of 16 transition metal;oxides (TMOs) are benchmarked against experiments with an increasing;complexity of the exchange-correlation (xc) functionals: PBE, PBE + U;with a single U for each transition metal element, PBE0 (25% exact;exchange included), EXX (100% exact exchange), and EXX + RPA (random;phase approximation for the correlation energy). Although rather;challenging on standard CPU computing facilities, the RPA calculations;were performed efficiently on graphic processing units (GPUs). For the;formation energies, the PBE + U, PBE0, EXX + RPA improves significantly;over PBE with mean absolute errors (MAE) of 0.83 (PBE), 0.39 (PBE + U),;0.34 (PBE0), and 0.39 (EXX + RPA) eV per oxygen. In addition, EXX+ RPA;improves over the other xc functionals on the oxidation reaction;energies, with MAE of 0.27 (PBE), 0.28 (PBE + U), 0.30 (PBE0), to 0.13;(EXX + RPA) eV per oxygen. The distinct trend observed for the;calculated oxidation reaction energies compared to the formation;energies is due to that the errors in formation energies for PBE and;EXX+ RPA are systematic; while for PBE + U and PBE0 the deviations have;both signs, so that the error cancellations between different valence;states work better for PBE and EXX + RPA. Finally, we compared the;performance of the EXX + RPA for total energies and G(0)W(0), which uses;the random phase approximation in constructing the W kernel, for band;gaps, and discuss a few challenges for the EXX + RPA method on TMOs.;0;0;0;0;0;1098-0121;WOS:000332160400001;;;J;Bahamon, D. A.;Neto, A. H. Castro;Pereira, Vitor M.;Effective contact model for geometry-independent conductance;calculations in graphene;PHYSICAL REVIEW B;88;23;235433;10.1103/PhysRevB.88.235433;DEC 27 2013;2013;A geometry-independent effective model for the contact self-energies is;proposed to calculate the quantum conductance of patterned graphene;devices using Green's functions. A Corbino disk, being the simplest;device where the contacts cannot be modeled as semi-infinite ribbons, is;chosen to illustrate this approach. This system's symmetry allows an;analytical solution against which numerical calculations on the lattice;can be benchmarked. The effective model perfectly describes the;conductance of Corbino disks at low-to-moderate energies, and is robust;against the size of the annular device region, the number of atoms on;the edge, external magnetic fields, or electronic disorder. The contact;model considered here affords an expedient, flexible, and;geometry-agnostic approach that easily allows the consideration of;device dimensions encompassing several million atoms, and realistic;radial dimensions of a few hundreds of nanometers.;Bahamon, Dario/G-1369-2012; Pereira, Vitor/D-4088-2009; Castro Neto, Antonio/C-8363-2014;Bahamon, Dario/0000-0003-3852-2085; Castro Neto,;Antonio/0000-0003-0613-4010;0;0;0;0;0;1098-0121;WOS:000332159200003;;;J;Hermann, Andreas;Ashcroft, N. W.;Hoffmann, Roald;Isotopic differentiation and sublattice melting in dense dynamic ice;PHYSICAL REVIEW B;88;21;214113;10.1103/PhysRevB.88.214113;DEC 27 2013;2013;The isotopes of hydrogen provide a unique exploratory laboratory for;examining the role of zero point energy (ZPE) in determining the;structural and dynamic features of the crystalline ices of water. There;are two critical regions of high pressure: (i) near 1 TPa and (ii) near;the predicted onset of metallization at around 5 TPa. At the lower;pressure of the two, we see the expected small isotopic effects on phase;transitions. Near metallization, however, the effects are much greater,;leading to a situation where tritiated ice could skip almost entirely a;phase available to the other isotopomers. For the higher pressure ices,;we investigate in some detail the enthalpics of a dynamic proton;sublattice, with the corresponding structures being quite ionic. The;resistance toward diffusion of single protons in the ground state;structures of high-pressure H2O is found to be large, in fact to the;point that the ZPE reservoir cannot overcome these. However, the;barriers toward a three-dimensional coherent or concerted motion of;protons can be much lower, and the ensuing consequences are explored.;Hermann, Andreas/E-8687-2010;Hermann, Andreas/0000-0002-8971-3933;1;0;0;0;1;1098-0121;WOS:000332157500001;;;J;Higashi, Yoichi;Nagai, Yuki;Machida, Masahiko;Hayashi, Nobuhiko;Field-angle resolved flux-flow resistivity as a phase-sensitive probe of;unconventional Cooper pairing;PHYSICAL REVIEW B;88;22;224511;10.1103/PhysRevB.88.224511;DEC 27 2013;2013;We theoretically investigate the applied magnetic field-angle dependence;of the flux-flow resistivity rho(f)(alpha(M)) for a uniaxially;anisotropic Fermi surface. rho(f) is related to the quasiparticle;scattering rate inside a vortex core, which reflects the sign change in;the superconducting pair potential. We find that rho(f)(alpha(M)) is;sensitive to the sign change in the pair potential and has its maximum;when the magnetic field is parallel to the gap-node direction. We;propose the measurement of the field-angle dependent oscillation of;rho(f)(alpha(M)) as a phase-sensitive field-angle resolved experiment.;Nagai, Yuki/B-6698-2011;Nagai, Yuki/0000-0001-5098-5440;0;0;0;0;0;1098-0121;WOS:000332158300001;;;J;Karakonstantakis, G.;Liu, L.;Thomale, R.;Kivelson, S. A.;Correlations and renormalization of the electron-phonon coupling in the;honeycomb Hubbard ladder and superconductivity in polyacene;PHYSICAL REVIEW B;88;22;224512;10.1103/PhysRevB.88.224512;DEC 27 2013;2013;We have performed extensive density matrix renormalization group (DMRG);studies of the Hubbard model on a honeycomb ladder. The band structure;(with Hubbard U = 0) exhibits an unusual quadratic band touching at;half-filling, which is associated with a quantum Lifshitz transition;from a band insulator to a metal. For one electron per site, nonzero U;drives the system into an insulating state in which there is no;pair-binding between added electrons; this implies that;superconductivity driven directly by the repulsive electron-electron;interactions is unlikely in the regime of small doping, x << 1. However,;the divergent density of states as x -> 0, the large values of the;phonon frequencies, and an unusual correlation induced enhancement of;the electron-phonon coupling imply that lightly doped polyacenes, which;approximately realize this structure, are good candidates for;high-temperature electron-phonon driven superconductivity.;1;1;0;0;1;1098-0121;WOS:000332158300002;;;J;Koerbel, Sabine;Elsaesser, Christian;Alignment of ferroelectric polarization and defect complexes in;copper-doped potassium niobate;PHYSICAL REVIEW B;88;21;214114;10.1103/PhysRevB.88.214114;DEC 27 2013;2013;Defect complexes consisting of Cu substitutionals on Nb sites and oxygen;vacancies in potassium niobate, KNbO3, are investigated with respect to;their contribution to ferroelectric hardening by means of;density-functional theory and classical atomistic simulations. We;determine the easy and hard directions for the ferroelectric;polarization created by these defect complexes, the energy differences;between easy and hard directions, and upper limits for the energy;barriers for switching the ferroelectric polarization between these;directions. The ferroelectric polarization preferentially aligns with;the defect complexes, which is expected to impede polarization switching;and hence to contribute to ferroelectric hardening.;1;0;0;0;1;1098-0121;WOS:000332157500002;;;J;Steger, Mark;Liu, Gangqiang;Nelsen, Bryan;Gautham, Chitra;Snoke, David W.;Balili, Ryan;Pfeiffer, Loren;West, Ken;Long-range ballistic motion and coherent flow of long-lifetime;polaritons;PHYSICAL REVIEW B;88;23;235314;10.1103/PhysRevB.88.235314;DEC 27 2013;2013;Exciton polaritons can be created in semiconductor microcavities. These;quasiparticles act as weakly interacting bosons with very light mass, of;the order of 10(-4) times the vacuum electron mass. Many experiments;have shown effects which can be viewed as due to a Bose-Einstein;condensate, or quasicondensate, of these particles. The lifetime of the;particles in most of those experiments has been of the order of a few;picoseconds, leading to significant nonequilibrium effects. By;increasing the cavity quality, we have made samples with longer;polariton lifetimes. With a photon lifetime on the order of 100-200 ps,;polaritons in these structures can not only come closer to reaching true;thermal equilibrium, a desired feature for many researchers working in;this field, but they can also travel much longer distances. We observe;the polaritons to ballistically travel on the order of 1 mm, and at;higher densities we see transport of a coherent condensate, or;quasicondensate, over comparable distances. In this paper we report a;quantitative analysis of the flow of the polaritons both in a low-;density, classical regime, and in the coherent regime at higher density.;Our analysis gives us a measure of the intrinsic lifetime for photon;decay from the microcavity and a measure of the strength of interactions;of the polaritons.;0;0;0;0;0;1098-0121;WOS:000332159200002;;;J;Sun, Dan;Wu, W.;Grigera, S. A.;Perry, R. S.;Mackenzie, A. P.;Julian, S. R.;Pressure study of nematicity and quantum criticality in Sr3Ru2O7 for an;in- plane field;PHYSICAL REVIEW B;88;23;235129;10.1103/PhysRevB.88.235129;DEC 27 2013;2013;We study the relationship between the nematic phases of Sr3Ru2O7 and;quantum criticality. At ambient pressure, one nematic phase is;associated with a metamagnetic quantum critical end point (QCEP) when;the applied magnetic field is near the c axis. We show, however, that;this metamagnetic transition does not produce the same nematic;signatures when the QCEP is reached by hydrostatic pressure with the;field applied in the ab plane. Moreover, a second nematic phase, that is;seen for field applied in the ab plane close to, but not right at, a;second metamagnetic anomaly, persists with minimal change to the highest;applied pressure, 16.55 kbar. Taken together our results suggest that;metamagnetic quantum criticality may not be necessary for the formation;of a nematic phase in Sr3Ru2O7.;0;0;0;0;0;1098-0121;WOS:000332159200001;;;J;Wierzbicki, M.;Swirkowicz, R.;Barnas, J.;Giant spin thermoelectric efficiency in ferromagnetic graphene;nanoribbons with antidots;PHYSICAL REVIEW B;88;23;235434;10.1103/PhysRevB.88.235434;DEC 27 2013;2013;Thermoelectric effects in zigzag graphene nanoribbons with parallel;alignment of the edge spin polarizations are investigated theoretically.;Spin and charge thermopower, electrical and heat conductance, and charge;and spin thermoelectric efficiency are calculated numerically for;pristine nanoribbons as well as for nanoribbons with periodic;one-dimensional lattice of structural defects in the form of antidots.;It is shown that structural defects reduce thermal conductance due to;phonons and open gaps in the corresponding electronic spectrum. This, in;turn, leads to a significant enhancement of the Seebeck and spin Seebeck;coefficients as well as of the thermoelectric efficiency. A giant;enhancement appears in certain regions of chemical potential (controlled;by doping or external gate) and survives at room temperatures.;1;0;0;0;1;1098-0121;WOS:000332159200004;;;J;Apalkov, Vadym;Stockman, Mark I.;Metal nanofilm in strong ultrafast optical fields;PHYSICAL REVIEW B;88;24;245438;10.1103/PhysRevB.88.245438;DEC 26 2013;2013;We predict that a metal nanofilm subjected to an ultrashort (near-single;oscillation) optical pulse of a high field amplitude greater than or;similar to 3 V/A at normal incidence undergoes an ultrafast (at subcycle;times less than or similar to 1 fs) transition to a state resembling;semimetal. Its reflectivity is greatly reduced, while its transmissivity;and the optical field inside the metal are greatly increased. Despite;the metal being a centrosymmetric medium, the strong pulse causes net;charge transfer in the direction determined by the carrier envelope;phase (CEP) of the pulse, which is opposite to the direction of the;maximum field.;2;0;0;0;2;1098-0121;WOS:000331756500005;;;J;Brems, Steven;Liu, Haoliang;Temst, Kristiaan;Van Haesendonck, Chris;Rotation sense of the magnetization in the Co/CoO exchange-bias system;probed with anisotropic magnetoresistance measurements;PHYSICAL REVIEW B;88;21;214427;10.1103/PhysRevB.88.214427;DEC 26 2013;2013;The possibility of tracking the average rotation sense of the;magnetization vector of a ferromagnetic layer upon magnetization;reversal by means of magnetotransport measurements is explored. It is;demonstrated that the rotation sense of the ferromagnetic magnetization;vector during a hysteresis loop can be determined for the;polycrystalline Co/CoO exchange bias system by measuring the anisotropic;magnetoresistance (AMR) with a specific choice of the measurement;geometry. The AMR measurements reveal that the rotation direction of the;magnetization vector can be reversed by performing an in-plane;hysteresis loop with a magnetic field perpendicular to the cooling;field. This reversal can be directly linked to the experimental fact;that after training, i.e., after performing hysteresis loops with a;field along the cooling field direction, the average orientation of the;uncompensated magnetization of the granular CoO antiferromagnet can be;largely rotated back to the initial orientation after field cooling by;applying a perpendicular field with the appropriate amplitude and;orientation.;1;0;0;0;1;1098-0121;WOS:000331751200005;;;J;Cuadra, J.;Sarkar, D.;Vina, L.;Hvam, J. M.;Nalitov, A.;Solnyshkov, D.;Malpuech, G.;Polarized emission in polariton condensates: Switching in a;one-dimensional natural trap versus inversion in two dimensions;PHYSICAL REVIEW B;88;23;235312;10.1103/PhysRevB.88.235312;DEC 26 2013;2013;We perform polarization resolved spectroscopy of two-and one-dimensional;microcavity-polariton condensates, which are formed by exciting the;system in the optical parametric oscillator configuration. We observe;polarization inversion for linearly polarized pumping parallel to the;wire in both the 1D and 2D systems. As the polarization plane of the;pump is rotated, the degree of linear polarization of the 2D system;oscillates between orthogonal polarizations with the same period as that;of the pump. However, the 1D system switches abruptly between two states;of high degree of linear polarization with half the period. Two;complementary models, based on semiclassical Boltzmann kinetic equations;and the Gross-Pitaevskii equation, respectively, obtain an excellent;agreement with the experimental results, providing a deep insight into;the mechanisms responsible for the polarization switching.;Vina, Luis/E-9415-2012;Vina, Luis/0000-0002-6376-6703;0;0;0;0;0;1098-0121;WOS:000331754500006;;;J;Das, Subrat Kumar;Singh, Viveka Nand;Majumdar, Pinaki;Magnon spectrum in the domain ferromagnetic state of antisite-disordered;double perovskites;PHYSICAL REVIEW B;88;21;214428;10.1103/PhysRevB.88.214428;DEC 26 2013;2013;In their ideal structure, double perovskites such as Sr2FeMoO6 have;alternating Fe and Mo along each cubic axis, and a homogeneous;ferromagnetic metallic ground state. Imperfect annealing leads to the;formation of structural domains. The moments on mislocated Fe atoms that;adjoin each other across the domain boundary have an antiferromagnetic;coupling between them. This leads to a peculiar magnetic state, with;ferromagnetic domains coupled antiferromagnetically. At a short distance;the system exhibits ferromagnetic correlation while at large length;scales the net moment is strongly suppressed due to interdomain;cancellation. We provide a detailed description of the spin-wave;excitations of this complex magnetic state, obtained within a 1/S;expansion, for a progressively higher degree of mislocation, i.e.,;antisite disorder. At a given wave vector the magnons propagate at;multiple energies, related, crudely, to "domain confined" modes with;which they have a large overlap. We provide a qualitative understanding;of the trend observed with growing antisite disorder, and contrast these;results to the much broader spectrum that one obtains for uncorrelated;antisites.;0;0;0;0;0;1098-0121;WOS:000331751200006;;;J;Dugaev, V. K.;Katsnelson, M. I.;Edge scattering of electrons in graphene: Boltzmann equation approach to;the transport in graphene nanoribbons and nanodisks;PHYSICAL REVIEW B;88;23;235432;10.1103/PhysRevB.88.235432;DEC 26 2013;2013;We discuss the contribution of edge scattering to the conductance of;graphene nanoribbons and nanoflakes. Using different possible types of;the boundary conditions for the electron wave function at the edge, we;found dependences of the momentum relaxation time and conductance on the;geometric sizes and on the carrier density. We also consider the case of;ballistic nanoribbon and nanodisk, for which the edge scattering is the;main mechanism of momentum relaxation.;3;0;0;0;3;1098-0121;WOS:000331754500008;;;J;Fossati, Paul C. M.;Van Brutzel, Laurent;Chartier, Alain;Crocombette, Jean-Paul;Simulation of uranium dioxide polymorphs and their phase transitions;PHYSICAL REVIEW B;88;21;214112;10.1103/PhysRevB.88.214112;DEC 26 2013;2013;In this article first-principles DFT calculations and molecular dynamics;simulations using empirical potentials have been used to study four;different polymorphs of uranium dioxide that appear under high;compressive and tensile deformations. It has been found, as expected,;that the ground-state structure is the fluorite-type structure (space;group Fm (3) over barm). Under high compressive deformation urania;transforms into cotunnite-type structure (space group Pnma), as already;known experimentally. The calculated transition pressure is 28 GPa in;agreement with the experimental data. Under tensile deformation urania;transforms into either scrutinyite-type structure (space group Pbcn) or;rutile-type (space group P4(2)/mnm) structure. These two phases are;almost energetically degenerate; hence it is impossible to distinguish;which phase is the most favorable. The transition pressure for both;phases is found to be equal to -10 GPa. Subsequently, assessment of four;of the most used empirical potentials for UO2-Morelon, Arima, Basak, and;Yakub-have been carried out comparing the equations of state with those;found with DFT calculations. The Morelon potential has been found to be;the most accurate to describe the different urania polymorphs. Using;this empirical potential and a dedicated minimization procedure,;complete transition pathways between the ground state (Fm (3) over barm);and both tensile structures (Pbcn or P4(2)/mnm) are described. Finally,;uniaxial tensile load molecular dynamics simulations have been;performed. It has been found that for load in the AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Bakr, M.;Souliou, S. M.;Blanco-Canosa, S.;Zegkinoglou, I.;Gretarsson, H.;Strempfer, J.;Loew, T.;Lin, C. T.;Liang, R.;Bonn, D. A.;Hardy, W. N.;Keimer, B.;Le Tacon, M.;Lattice dynamical signature of charge density wave formation in;underdoped YBa2Cu3O6+x;PHYSICAL REVIEW B;88;21;214517;10.1103/PhysRevB.88.214517;DEC 31 2013;2013;We report a detailed Raman scattering study of the lattice dynamics in;detwinned single crystals of the underdoped high-temperature;superconductor YBa2Cu3O6+x (x = 0.75, 0.6, 0.55, and 0.45). Whereas at;room temperature the phonon spectra of these compounds are similar to;that of optimally doped YBa2Cu3O6.99, additional Raman-active modes;appear upon cooling below similar to 170-200Kin underdoped crystals. The;temperature dependence of these new features indicates that they are;associated with the incommensurate charge density wave state recently;discovered using synchrotron x-ray scattering techniques on the same;single crystals. Raman scattering thus has the potential to explore the;evolution of this state under extreme conditions.;Zegkinoglou, Ioannis/H-2343-2013; Le Tacon, Mathieu/D-8023-2011;Le Tacon, Mathieu/0000-0002-5838-3724;6;0;0;0;6;1098-0121;WOS:000332165200002;;;J;Benedicto, Jessica;Centeno, Emmanuel;Polles, Remi;Moreau, Antoine;Ultimate resolution of indefinite metamaterial flat lenses;PHYSICAL REVIEW B;88;24;245138;10.1103/PhysRevB.88.245138;DEC 31 2013;2013;We propose an approach allowing a systematic optimization of lenses;based on hyperbolic metamaterials. The lensing properties of these;highly anisotropic materials are summed up in a complex effective index;extracted from the complex dispersion relation. The analytical;expression of this effective index in the homogenization regime or its;direct computation from the Bloch band diagram in the resonant regime;leads to hyperbolic metamaterials that outperform the state-of-art flat;lenses. We show that feasible metal-dielectric multilayers provide;superresolved images for visible light (around 400 nm) even when fully;taking absorption into account.;0;0;0;0;0;1098-0121;WOS:000332166700001;;;J;Biswas, P. K.;Amato, A.;Baines, C.;Khasanov, R.;Luetkens, H.;Lei, Hechang;Petrovic, C.;Morenzoni, E.;Low superfluid density and possible multigap superconductivity in the;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;88;22;224515;10.1103/PhysRevB.88.224515;DEC 31 2013;2013;The magnetic penetration depth lambda as a function of temperature in;Bi4O4S3 was studied by muon-spin-spectroscopy measurements. The;superfluid density of Bi4O4S3 is found to be very low. The dependence of;lambda (2) on temperature possibly suggests the existence of two;s-wave-type energy gaps with the zero-temperature values of 0.93 (3) and;0.09 (4) meV. The upturn in the temperature dependence of the upper;critical field close to T-c further supports multigap superconductivity;in Bi4O4S3. The presence of two superconducting energy gaps is;consistent with theoretical and other experimental studies. However, a;single-gap s-wave model fit with a gap of 0.88 (2) meV cannot be ruled;out completely. The value of lambda(T) at T = 0 K is estimated to be;lambda(0) = 861 (17) nm, one of the largest of all known layered;superconductors, reflecting a very low superfluid density.;Luetkens, Hubertus/G-1831-2011;4;0;0;0;4;1098-0121;WOS:000332166200005;;;J;Cao, G.;Qi, T. F.;Li, L.;Terzic, J.;Cao, V. S.;Yuan, S. J.;Tovar, M.;Murthy, G.;Kaul, R. K.;Evolution of magnetism in the single-crystal honeycomb iridates;(Na1-xLix)(2)IrO3;PHYSICAL REVIEW B;88;22;220414;10.1103/PhysRevB.88.220414;DEC 31 2013;2013;We report the successful synthesis of single crystals of the layered;iridate (Na1-xLix)(2)IrO3, 0 <= x <= 0.9, and a thorough study of its;structural, magnetic, thermal, and transport properties. This compound;allows a controlled interpolation between Na2IrO3 and Li2IrO3, while;maintaining the quantum magnetism of the honeycomb Ir4+ planes. The;measured phase diagram demonstrates a suppression of the Neel;temperature T-N at an intermediate x, indicating that the magnetic;orders in Na2IrO3 and Li2IrO3 are distinct. X-ray data show that for x;approximate to 0.7, when T-N is suppressed the most, the honeycomb;structure is least distorted, leading to the speculation that at this;intermediate doping of the material is closest to the spin liquid that;has been sought after in Na2IrO3 and Li2IrO3. By analyzing our magnetic;data with a single-ion theoretical model we also show that the trigonal;splitting on the Ir4+ ions changes sign from Na2IrO3 to Li2IrO3.;8;0;0;0;8;1098-0121;WOS:000332166200001;;;J;Farr, Warrick G.;Creedon, Daniel L.;Goryachev, Maxim;Benmessai, Karim;Tobar, Michael E.;Ultrasensitive microwave spectroscopy of paramagnetic impurities in;sapphire crystals at millikelvin temperatures;PHYSICAL REVIEW B;88;22;224426;10.1103/PhysRevB.88.224426;DEC 31 2013;2013;Progress in the emerging field of engineered quantum systems requires;the development of devices that can act as quantum memories. The;realization of such devices by doping solid-state cavities with;paramagnetic ions imposes a tradeoff between ion concentration and;cavity coherence time. Here, we investigate an alternative approach;involving interactions between photons and naturally occurring impurity;ions in ultrapure crystalline microwave cavities exhibiting;exceptionally high quality factors. We implement a hybrid whispering;gallery/electron spin resonance method to perform rigorous spectroscopy;of an undoped single-crystal sapphire resonator over the frequency range;8-19 GHz, and at external applied DC magnetic fields up to 0.9 T.;Measurements of high-purity sapphire cooled close to 100 mK reveal the;presence of Fe3+, Cr3+, and V2+ impurities. A host of electron;transitions are measured and identified, including the two-photon;classically forbidden quadrupole transition (Delta m(s) = 2) for Fe3+,;as well as hyperfine transitions of V2+.;Tobar, Michael/C-9763-2009; Creedon, Daniel/A-8772-2010; Goryachev, Maxim/K-5851-2013;Creedon, Daniel/0000-0003-2912-3381; Goryachev,;Maxim/0000-0002-0257-4054;5;0;0;0;5;1098-0121;WOS:000332166200004;;;J;Joseph, B.;Bendele, M.;Simonelli, L.;Maugeri, L.;Pyon, S.;Kudo, K.;Nohara, M.;Mizokawa, T.;Saini, N. L.;Local structural displacements across the structural phase transition in;IrTe2: Order-disorder of dimers and role of Ir-Te correlations;PHYSICAL REVIEW B;88;22;224109;10.1103/PhysRevB.88.224109;DEC 31 2013;2013;We have studied local structure of IrTe2 by Ir L-3-edge extended x-ray;absorption fine structure (EXAFS) measurements as a function of;temperature to investigate origin of the observed structural phase;transition at T-s similar to 270 K. The EXAFS results show an appearance;of longer Ir-Te bond length (Delta R similar to 0.05 angstrom) at T <;T-s. We have found Ir-Ir dimerization, characterized by distinct Ir-Ir;bond lengths (Delta R similar to 0.13 angstrom), existing both above and;below T-s. The results suggest that the phase transition in IrTe2 should;be an order-disorder-like transition of Ir-Ir dimers assisted by Ir-Te;bond correlations, thus indicating important role of the interaction;between the Ir 5d and Te 5p orbitals in this transition.;KUDO, Kazutaka/B-1468-2011; NOHARA, Minoru/B-1476-2011;3;0;0;0;3;1098-0121;WOS:000332166200003;;;J;Kobayashi, Keita;Machida, Masahiko;Ota, Yukihiro;Nori, Franco;Massless collective excitations in frustrated multiband superconductors;PHYSICAL REVIEW B;88;22;224516;10.1103/PhysRevB.88.224516;DEC 31 2013;2013;We study collective excitations in three- and four-band superconductors;with interband frustration, which causes neither 0 nor pi interband;phases in the superconducting state. Using a low-energy spin Hamiltonian;originating from a multiband tight-binding model, we find that mass;reduction of a Leggett mode occurs in a wide parameter region of this;four-band system. As a limiting case, we have a massless Leggett mode.;This massless mode is related to the fact that the mean-field energy;does not depend on a relative phase of superconducting order parameters.;In other words, we find a link of the massless mode with a degeneracy;between a time-reversal-symmetry-breaking state (neither 0 nor pi;phases) and a time-reversal-symmetric state (either 0 or pi phases).;Therefore, the mass of collective modes characterizes well the;time-reversal symmetry in frustrated multiband superconductors.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332166200006;;;J;Ohtsubo, Yoshiyuki;Yaji, Koichiro;Hatta, Shinichiro;Okuyama, Hiroshi;Aruga, Tetsuya;Two-dimensional states localized in subsurface layers of Ge(111);PHYSICAL REVIEW B;88;24;245310;10.1103/PhysRevB.88.245310;DEC 31 2013;2013;The origin of the two-dimensional surface states localized in subsurface;regions of the Ge(111) substrate has been studied by;density-functional-theory calculations, which were compared with the;experimental results of angle-resolved photoelectron spectroscopy. For;the Bi/Ge(111)-(root 3 x root 3)R30 degrees, Br/Ge(111)-(1x1), and;Tl/Ge(111)-(1x1) surfaces, we found that the surface states are;classified into three groups. The energy dispersion and the orbital;character for each band implies the relationship between the subsurface;states and the bulk heavy-hole, light-hole, and spin-orbit split-off;bands. These results indicate that the subsurface states originate from;the bulk bands that are perturbed due to the truncation of the;three-dimensional periodicity at the surface.;Okuyama, Hiroshi/H-7570-2014;1;0;0;0;1;1098-0121;WOS:000332166700002;;;J;Oiwake, M.;Ootsuki, D.;Noji, T.;Hatakeda, T.;Koike, Y.;Horio, M.;Fujimori, A.;Saini, N. L.;Mizokawa, T.;Electronic structure and phase separation of superconducting and;nonsuperconducting KxFe2-ySe2 revealed by x-ray photoemission;spectroscopy;PHYSICAL REVIEW B;88;22;224517;10.1103/PhysRevB.88.224517;DEC 31 2013;2013;We have investigated the electronic structure of superconducting (SC);and nonsuperconducting (non-SC) KxFe2-ySe2 using x-ray photoemission;spectroscopy (XPS). The spectral shape of the Fe 2p XPS is found to;depend on the amount of Fe vacancies. The Fe 2p(3/2) peak of the SC and;non-SC Fe-rich samples is accompanied by a shoulder structure on the;lower binding energy side, which can be attributed to the metallic phase;embedded in the Fe2+ insulating phase. The absence of the shoulder;structure in the non-SC Fe-poor sample allows us to analyze the Fe 2p;spectra using a FeSe4 cluster model. The Fe 3d-Se 4p charge-transfer;energy of the Fe2+ insulating phase is found to be similar to 2.3 eV;which is smaller than the Fe 3d-Fe 3d Coulomb interaction of similar to;3.5 eV. This indicates that the Fe2+ insulating state is the;charge-transfer type in the Zaanen-Sawatzky-Allen scheme. We also find a;substantial change in the valence-band XPS as a function of Fe content;and temperature. The metallic state at the Fermi level is seen in the SC;and non-SC Fe-rich samples and tends to be enhanced with cooling in the;SC sample.;0;0;0;0;0;1098-0121;WOS:000332166200007;;;J;Park, Keeseong;Nomura, Yusuke;Arita, Ryotaro;Llobet, Anna;Louca, Despina;Local strain and anharmonicity in the bonding of Bi2Se3-xTex topological;insulators;PHYSICAL REVIEW B;88;22;224108;10.1103/PhysRevB.88.224108;DEC 31 2013;2013;Using neutron diffraction and the pair density function analysis, the;local atomic structure of the three-dimensional Bi2Se3-xTex (x = 0, 1,;2, and 3) topological insulator is investigated. The substitution of Te;for Se in Bi2Se3-xTex (x = 0, 1, 2, and 3) is not random and its;preferred site is at the edges of the quintuple layer. This generates a;local strain due to the atom size mismatch between Se and Te. The site;preference is surprising given that the Bi to chalcogen bonds are;strongest when the ions are at the edges than in the middle layer. The;(Se/Te) atoms in the middle sublayer of the quintuple are coupled more;softly to the Bi atoms than those of the edges and have lower Debye;temperatures. This suggests that the atomic properties within the;quintuple layer are different than those at the edges. Additionally, the;results from band structure and density of state calculations are;reported to show the dependence of doping and temperature.;Arita, Ryotaro/D-5965-2012; Llobet, Anna/B-1672-2010;Arita, Ryotaro/0000-0001-5725-072X;;0;0;0;0;0;1098-0121;WOS:000332166200002;;;J;Pogorelov, Y. G.;Santos, M. C.;Loktev, V. M.;Impurity effects on electronic transport in ferropnictide;superconductors;PHYSICAL REVIEW B;88;22;224518;10.1103/PhysRevB.88.224518;DEC 31 2013;2013;Effects of impurities and disorder on transport properties by electronic;quasiparticles in superconducting iron pnictides are theoretically;considered. The most prominent new features compared to the case of pure;material should appear at high enough impurity concentration when a;specific narrow band of conducting quasiparticle states can develop;within the superconducting gap, around the position of localized;impurity level by a single impurity center. The predicted specific;threshold effects in the frequency-dependent optical conductivity and;temperature-dependent thermal conductivity and also in Seebeck and;Peltier coefficients can have interesting potentialities for practical;applications.;0;0;0;0;0;1098-0121;WOS:000332166200008;;;J;Reich, K. V.;Chen, T.;Efros, Al. L.;Shklovskii, B. I.;Photoluminescence in arrays of doped semiconductor nanocrystals;PHYSICAL REVIEW B;88;24;245311;10.1103/PhysRevB.88.245311;DEC 31 2013;2013;We study the dependence of the quantum yield of photoluminescence of a;dense, periodic array of semiconductor nanocrystals (NCs) on the level;of doping and NC size. Electrons introduced to NCs via doping quench;photoluminescence by the Auger process, so that practically only NCs;without electrons contribute to the photoluminescence. Computer;simulation and analytical theory are used to find a fraction of such;empty NCs as a function of the average number of donors per NC and NC;size. For an array of small spherical NCs, the quantization gap between;1S and 1P levels leads to transfer of electrons from NCs with large;number of donors to those without donors. As a result, empty NCs become;extinct, and photoluminescence is quenched abruptly at an average number;of donors per NC close to 1.8. The relative intensity of;photoluminescence is shown to correlate with the type of hopping;conductivity of an array of NCs.;2;0;0;0;2;1098-0121;WOS:000332166700003;;;J;Rousse, Gwenaelle;Rodriguez-Carvajal, Juan;Wurm, Calin;Masquelier, Christian;Spiral magnetic structure in the iron diarsenate LiFeAs2O7: A neutron;diffraction study;PHYSICAL REVIEW B;88;21;214433;10.1103/PhysRevB.88.214433;DEC 31 2013;2013;The magnetic structure of LiFeAs2O7 (monoclinic, space group C2) has;been solved using neutron powder diffraction. This compound presents an;antiferromagnetic behavior characterized by a long-range ordering;observed in the neutron diffraction patterns below the Neel temperature;(T-N = 35 K). The magnetic structure is found to be incommensurate with;respect to the nuclear structure, the magnetic peaks being indexed with;a propagation vector k = (0.709, 0, 0.155). The magnetic moments form a;general spiral (helical-cycloidal) arrangement with a constant magnetic;moment of 4.21 mu B. The magnetic structure is discussed in terms of;super-super exchange interactions involving two oxygen atoms belonging;to an AsO4 tetrahedron, and compared with the magnetic structure of the;di-phosphate analogue LiFeP2O7. The presence of triangular super-super;exchange paths is believed to be at the origin of this incommensurate;magnetic structure. The potential of LiFeAs2O7 as a possible;multiferroic material is discussed.;Rodriguez-Carvajal, Juan/C-4362-2008;Rodriguez-Carvajal, Juan/0000-0001-5582-2632;1;0;0;0;1;1098-0121;WOS:000332165200001;;;J;Smith, Peter M.;Kennett, Malcolm P.;Disorder effects on superconducting tendencies in the checkerboard;Hubbard model;PHYSICAL REVIEW B;88;21;214518;10.1103/PhysRevB.88.214518;DEC 31 2013;2013;The question of whether spatially inhomogeneous hopping in the two;dimensional Hubbard model can lead to enhancement of superconductivity;has been tackled by a number of authors in the context of the;checkerboard Hubbard model (CHM). We address the effects of disorder on;superconducting properties of the CHM by using exact diagonalization;calculations for both potential and hopping disorder. We characterize;the superconducting tendencies of the model by focusing on the;pair-binding energy, the spin gap, and d-wave pairing order parameter.;We find that superconducting tendencies, particularly the pair-binding;energy, are more robust to disorder when there is inhomogeneous hopping;than for the uniform Hubbard model. We also study all possible staggered;potentials for an eight-site CHM cluster and relate the behavior of;these configurations to the disordered system.;Kennett, Malcolm/I-2898-2012;1;0;0;0;1;1098-0121;WOS:000332165200003;;;J;Cortes-Huerto, R.;Sondon, T.;Saul, A.;Role of temperature in the formation and growth of gold monoatomic;chains: A molecular dynamics study;PHYSICAL REVIEW B;88;23;235438;10.1103/PhysRevB.88.235438;DEC 31 2013;2013;The effect of temperature on the formation and growth of monoatomic;chains is investigated by extensive molecular dynamics simulations using;a semiempirical potential based on the second-moment approximation to;the tight-binding Hamiltonian. Gold nanowires, with an aspect ratio of;similar to 13 and a cross section of similar to 1 nm(2), are stretched;at a rate of 3 m/s in the range of temperatures 5-600 K with 50 initial;configurations per temperature. A detailed study on the probability to;form monoatomic chains (MACs) is presented. Two domains are apparent in;our simulations: one at T < 100 K, where MACs develop from crystalline;disorder at the constriction, and the other at T > 100 K, where MACs;form as a consequence of plastic deformation of the nanowire. Our;results show that the average length of the formed MACs maximizes at T =;150 K, which is supported by simple energy arguments.;0;0;0;0;0;1098-0121;WOS:000332166400004;;;J;Despoja, V.;Loncaric, I.;Mowbray, D. J.;Marusic, L.;Quasiparticle spectra and excitons of organic molecules deposited on;substrates: G(0)W(0)-BSE approach applied to benzene on graphene and;metallic substrates;PHYSICAL REVIEW B;88;23;235437;10.1103/PhysRevB.88.235437;DEC 31 2013;2013;We present an alternative methodology for calculating the quasiparticle;energy, energy loss, and optical spectra of a molecule deposited on;graphene or a metallic substrate. To test the accuracy of the method it;is first applied to the isolated benzene (C6H6) molecule. The;quasiparticle energy levels and especially the energies of the benzene;excitons (triplet, singlet, optically active and inactive) are in very;good agreement with available experimental results. It is shown that the;vicinity of the various substrates [pristine/doped graphene or (jellium);metal surface] reduces the quasiparticle highest occupied molecular;orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap by an amount;that slightly depends on the substrate type. This is consistent with the;simple image theory predictions. It is even shown that the substrate;does not change the energy of the excitons in the isolated molecule. We;prove (in terms of simple image theory) that energies of the excitons;are indeed influenced by two mechanisms which cancel each other. We;demonstrate that the benzene singlet optically active (E-1u) exciton;couples to real electronic excitations in the substrate. This causes it;substantial decay, such as Gamma approximate to 174 meV for pristine;graphene and Gamma approximate to 362 meV for metal surfaces as the;substrate. However, we find that doping graphene does not influence the;E-1u exciton decay rate.;Mowbray, Duncan/A-5531-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Loncaric, Ivor/J-6677-2014;Mowbray, Duncan/0000-0002-8520-0364; Loncaric, Ivor/0000-0002-5554-4641;2;0;0;0;2;1098-0121;WOS:000332166400003;;;J;Dutt, Prasenjit apq;Le Hur, Karyn;Strongly correlated thermoelectric transport beyond linear response;PHYSICAL REVIEW B;88;23;235133;10.1103/PhysRevB.88.235133;DEC 31 2013;2013;We investigate nonlinear thermoelectric transport through quantum;impurity systems with strong on-site interactions. We show that the;steady-state transport through interacting quantum impurities in contact;with electron reservoirs at significantly different temperatures can be;captured by an effective-equilibrium density matrix, expressed compactly;in terms of the Lippmann-Schwinger operators of the system. In addition,;the reservoirs can be maintained at arbitrary chemical potentials. The;interplay between the temperature gradient and bias voltage gives rise;to a nontrivial breaking of particle-hole symmetry in the strongly;correlated regime, manifest in the Abrikosov-Suhl localized electron;resonance. This purely many-body effect, which is in agreement with;experimental results, is beyond the purview of mean-field arguments.;2;0;0;0;2;1098-0121;WOS:000332166400001;;;J;Li, Yunpu;King, Jonathan P.;Reimer, Jeffrey A.;Meriles, Carlos A.;Near-band-gap photoinduced nuclear spin dynamics in semi-insulating;GaAs: Hyperfine- and quadrupolar-driven relaxation;PHYSICAL REVIEW B;88;23;235211;10.1103/PhysRevB.88.235211;DEC 31 2013;2013;Understanding and manipulating spin polarization and transport in the;vicinity of semiconductor-hosted defects is a problem of present;technological and fundamental importance. Here, we use high-field;magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei;in semi-insulating GaAs. Our experiments benefit from the conditions;created in the limit of low illumination intensities, where intermittent;occupation of the defect site by photoexcited electrons leads to;electric field gradient fluctuations and concomitant spin relaxation of;the neighboring quadrupolar nuclei. We find indication of a;heterogeneous distribution of polarization, governed by different;classes of defects activated by either weak or strong laser excitation.;Upon application of a train of light pulses of variable repetition rate;and on/off ratio, we uncover an intriguing regime of mesoscale nuclear;spin diffusion restricted by long-range, nonuniform electric field;gradients. Given the slow time scale governing nuclear spin evolution,;such optically induced polarization patterns could be exploited as a;contrast mechanism to expose dark lattice defects or localized charges;with nanoscale resolution.;0;0;0;0;0;1098-0121;WOS:000332166400002;;;J;Adolff, Christian F.;Haenze, Max;Vogel, Andreas;Weigand, Markus;Martens, Michael;Meier, Guido;Self-organized state formation in magnonic vortex crystals;PHYSICAL REVIEW B;88;22;224425;10.1103/PhysRevB.88.224425;DEC 30 2013;2013;We study the polarization-state formation in magnonic vortex crystals;via scanning transmission x-ray microscopy. Self-organized state;formation is observed by adiabatic reduction of a high-frequency field;excitation. The emerging polarization patterns are shown to depend on;the frequency of excitation and the strength of the dipolar interaction;between the elements. In spite of the complexity of the investigated;system, global order caused by local interactions creates polarization;states with a high degree of symmetry. A fundamental dipole model and;coupled equations of motion are adopted to analytically describe the;experimental results. The emerging states can be predicted by a;fundamental stability criterion based on the excitability of eigenmodes;in the crystal. Micromagnetic simulations give additional insight into;the underlying processes.;2;0;0;0;2;1098-0121;WOS:000332162300008;;;J;Berridge, A. M.;Green, A. G.;Nonequilibrium conductivity at quantum critical points;PHYSICAL REVIEW B;88;22;220512;10.1103/PhysRevB.88.220512;DEC 30 2013;2013;Quantum criticality provides an important route to revealing universal;nonequilibrium behavior. A canonical example of a critical point is the;Bose-Hubbard model, which we study under the application of an electric;field. A Boltzmann transport formalism and is an element of expansion;are used to obtain the nonequilibrium conductivity and current noise.;This approach allows us to explicitly identify how a universal;nonequilibrium steady state is maintained, by identifying the;rate-limiting step in balancing Joule heating and dissipation to a heat;bath. It also reveals that the nonequilibrium distribution function is;very far from a thermal distribution.;1;0;0;0;1;1098-0121;WOS:000332162300004;;;J;Bojesen, Troels Arnfred;Babaev, Egor;Sudbo, Asle;Time reversal symmetry breakdown in normal and superconducting states in;frustrated three-band systems;PHYSICAL REVIEW B;88;22;220511;10.1103/PhysRevB.88.220511;DEC 30 2013;2013;We discuss the phase diagram and phase transitions in U(1) x Z(2);three-band superconductors with broken time reversal symmetry. We find;that beyond mean-field approximation and for sufficiently strong;frustration of interband interactions there appears an unusual metallic;state precursory to a superconducting phase transition. In that state,;the system is not superconducting. Nonetheless, it features a;spontaneously broken Z(2) time reversal symmetry. By contrast, for weak;frustration of interband coupling the energy of a domain wall between;different Z(2) states is low and thus fluctuations restore broken time;reversal symmetry in the superconducting state at low temperatures.;2;0;0;0;2;1098-0121;WOS:000332162300003;;;J;Gracia-Salgado, Rogelio;Garcia-Chocano, Victor M.;Torrent, Daniel;Sanchez-Dehesa, Jose;Negative mass density and rho-near-zero quasi-two-dimensional;metamaterials: Design and applications;PHYSICAL REVIEW B;88;22;224305;10.1103/PhysRevB.88.224305;DEC 30 2013;2013;We report the design and the characterization of artificial structures;made of periodical distributions of structured cylindrical scatterers;embedded in a two-dimensional (2D) waveguide. For certain values of;their geometrical parameters they show simultaneously negative effective;bulk modulus and negative effective mass density. Here our analysis is;focused on the frequencies where they behave like materials with;negative density or density near zero (DNZ). The scattering units;consist of a rigid cylindrical core surrounded by an anisotropic shell;divided in angular sectors. The units are embedded in a 2D waveguide;whose height is smaller than the length of the cylinders, which makes;the structure quasi-2D. We have obtained the dispersion relation of the;surface acoustic waves excited at frequencies with negative effective;density. Also, we report phenomena associated with their DNZ behavior,;such as tunneling through narrow channels, control of the radiation;field, perfect transmission through sharp corners, and power splitting.;Preliminary experiments performed on samples with millimeter-scale;dimensions demonstrated their single-negative behavior, with the main;drawback being the strong losses measured at the frequencies where the;negative behavior is observed.;sanchez-dehesa, jose/L-9726-2014;1;0;0;0;1;1098-0121;WOS:000332162300006;;;J;Klar, D.;Brena, B.;Herper, H. C.;Bhandary, S.;Weis, C.;Krumme, B.;Schmitz-Antoniak, C.;Sanyal, B.;Eriksson, O.;Wende, H.;Oxygen-tuned magnetic coupling of Fe-phthalocyanine molecules to;ferromagnetic Co films;PHYSICAL REVIEW B;88;22;224424;10.1103/PhysRevB.88.224424;DEC 30 2013;2013;The coupling of submonolayer coverages of Fe-phthalocyanine molecules on;bare and oxygen-covered ferromagnetic Co(001) films was studied by;x-ray-absorption spectroscopy, especially the x-ray magnetic circular;dichroism, in combination with density functional theory. We observe;that the magnetic moments of the paramagnetic molecules are aligned even;at room temperature, resulting from a magnetic coupling to the;substrate. While the magnetization of the Fe ions directly adsorbed on;the Co surface is parallel to the magnetization of the Co film, the;introduction of an oxygen interlayer leads to an antiparallel alignment.;As confirmed by theory, the coupling strength is larger for the system;FePc/Co than for FePc/O/Co, causing a stronger temperature dependence of;the Fe magnetization for the latter system. Furthermore, the;calculations reveal that the coupling mechanism changes due to the O;layer from mostly direct exchange to Co of the bare surface to a 180;degrees antiferromagnetic superexchange via the O atoms. Finally, by;comparing the experimental x-ray-absorption spectra at the N K edge with;the corresponding calculations, the contribution of the individual;orbitals has been determined and the two inequivalent N atoms of the;molecules could be distinguished.;Wende, Heiko/J-8505-2012; Schmitz-Antoniak, Carolin/C-2234-2009;Schmitz-Antoniak, Carolin/0000-0002-8450-3515;3;0;0;0;3;1098-0121;WOS:000332162300007;;;J;Moor, Andreas;Volkov, Anatoly F.;Efetov, Konstantin B.;Time-dependent equation for the magnetic order parameter near the;quantum critical point in multiband superconductors with a spin-density;wave;PHYSICAL REVIEW B;88;22;224513;10.1103/PhysRevB.88.224513;DEC 30 2013;2013;Using a simple two-band model for Fe-based pnictides and the generalized;Eilenberger equation, we present a microscopic derivation of a;time-dependent equation for the amplitude of the spin-density wave near;the quantum critical point where it turns to zero. This equation;describes the dynamics of the magnetic (m), as well as the;superconducting order parameter (Delta). It is valid at low temperatures;T and small m (T, m << Delta) in a region of coexistence of both order;parameters, m and Delta. The boundary of this region is found in the;space of the nesting parameter {mu(0), mu(f)}, where mu(0) describes the;relative position of the electron and the hole pockets on the energy;scale and mu(phi) accounts for the ellipticity of the electron pocket.;At low T the number of quasiparticles is small due to the presence of;the energy gap Delta, and therefore the quasiparticles do not play a;role in the relaxation of m. This circumstance allows one to derive the;time-dependent equation for m in contrast to the case of conventional;superconductors for which the time-dependent Ginzburg-Landau equation;can be derived near T-c only in some special cases (high concentration;of paramagnetic impurities) [L. P. Gor'kov and G. M. Eliashberg, Sov.;Phys. JETP 27, 328 (1968)]. In the stationary case the derived equation;is valid at arbitrary temperatures. We find a solution of the stationary;equation which describes a domain wall in the magnetic structure. In the;center of the domain wall the superconducting order parameter has a;maximum, which means a local enhancement of superconductivity. Using the;derived time-dependent equation for m, we investgate also the stability;of a uniform commensurate spin-density wave (SDW) and obtain the values;of {mu(0), mu(f)} at which the first-order transition into the state;with m = 0 takes place or the transition to the state with an;inhomogeneous SDW occurs.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000332162300009;;;J;Singh, Yogesh;Tokiwa, Y.;Dong, J.;Gegenwart, P.;Spin liquid close to a quantum critical point in Na4Ir3O8;PHYSICAL REVIEW B;88;22;10.1103/PhysRevB.88.220413;DEC 30 2013;2013;Na4Ir3O8 is a candidate material for a three-dimensional quantum spin;liquid on the hyperkagome lattice. We present thermodynamic measurements;of heat capacity C and thermal conductivity kappa on high-quality;polycrystalline samples of Na4Ir3O8 down to T = 500 and 75 mK,;respectively. Absence of long-range magnetic order down to T = 75 mK;strongly supports claims of a spin-liquid ground state. The constant;magnetic susceptibility chi below T approximate to 25 K and the presence;of a small but finite linear-T term in C(T) suggest the presence of;gapless spin excitations. Additionally, the magnetic Gruneisen ratio;shows a divergence as T -> 0 K and a scaling behavior, which clearly;demonstrates that Na4Ir3O8 is situated close to a zero-field QCP.;Dong, Jinkui/J-3603-2013;2;0;0;0;2;1098-0121;WOS:000332162300002;;;J;Taen, Toshihiro;Ohtake, Fumiaki;Akiyama, Hiroki;Inoue, Hiroshi;Sun, Yue;Pyon, Sunseng;Tamegai, Tsuyoshi;Pair-breaking effects induced by 3-MeV proton irradiation in;Ba1-xKxFe2As2;PHYSICAL REVIEW B;88;22;224514;10.1103/PhysRevB.88.224514;DEC 30 2013;2013;Pair-breaking effects induced by 3-MeV proton irradiations are examined;in underdoped, optimally doped, and overdoped Ba1-xKxFe2As2 single;crystals in terms of suppression of the superconducting critical;temperature T-c. The small residual resistivity (RR) in as-grown;crystals shows the presence of negligible intrinsic scatterings, which;makes this material a model system for studying the effect of;artificially introduced scatterings. The RR and Tc change linearly with;the proton dose. As in the case of proton irradiation in Co-doped;BaFe2As2, we do not detect any low-temperature upturns in resistivity;attributable to magnetic scattering or localization. Regardless of K;doping levels, the critical value of the normalized scattering rate is;much higher than that expected in s(perpendicular to)-wave;superconductors.;悦, å™/B-1373-2013;悦, å™/0000-0002-5189-5460;3;0;0;0;3;1098-0121;WOS:000332162300010;;;J;Yan, Ming;Kakay, Attila;Andreas, Christian;Hertel, Riccardo;Spin-Cherenkov effect and magnonic Mach cones;PHYSICAL REVIEW B;88;22;220412;10.1103/PhysRevB.88.220412;DEC 30 2013;2013;We report on the Cherenkov-type excitation of spin waves (SWs) in;ferromagnets. Our micromagnetic simulations show that a localized;magnetic field pulse moving sufficiently fast along the surface of a;ferromagnet generates a SW boom, with a Mach-type cone of propagating;wave fronts. The SWs are formed when the velocity of the source exceeds;the propagation speed of SWs. Unlike the single cone of the usual;Cherenkov effect, we find that the magnetic Mach cone consists of two;wave fronts with different wave numbers. In patterned thin strips, this;magnetic analog of the Cherenkov effect should enable the excitation of;SWs with well-defined and velocity-dependent frequency. It thereby;provides a promising route towards tunable SW generation, with important;potential for applications in magnonic devices.;2;0;0;0;2;1098-0121;WOS:000332162300001;;;J;Yang, Lusann;Ceder, Gerbrand;Data-mined similarity function between material compositions;PHYSICAL REVIEW B;88;22;224107;10.1103/PhysRevB.88.224107;DEC 30 2013;2013;A new method for assessing the similarity of material compositions is;described. A similarity measure is important for the classification and;clustering of compositions. The similarity of the material compositions;is calculated utilizing a data-mined ionic substitutional similarity;based upon the probability with which two ions will substitute for each;other within the same structure prototype. The method is validated via;the prediction of crystal structure prototypes for oxides from the;Inorganic Crystal Structure Database, selecting the correct prototype;from a list of known prototypes within five guesses 75% of the time. It;performs particularly well on the quaternary oxides, selecting the;correct prototype from a list of known prototypes on the first guess 65%;of the time.;1;0;0;0;1;1098-0121;WOS:000332162300005;;;J;Bartelt, Norman C.;Nie, Shu;Starodub, Elena;Bernal-Villamil, Ivan;Gallego, Silvia;Vergara, Lucia;McCarty, Kevin F.;de la Figuera, Juan;Order-disorder phase transition on the (100) surface of magnetite;PHYSICAL REVIEW B;88;23;235436;10.1103/PhysRevB.88.235436;DEC 30 2013;2013;Using low-energy electron diffraction, we show that the room-temperature;(root 2 x root 2) R45 degrees reconstruction of Fe3O4(100) reversibly;disorders at similar to 450 degrees C. Short-range order persists above;the transition, suggesting that the transition is second order and;Ising-like. We interpret the transition in terms of a model in which;subsurface Fe3+ is replaced by Fe2+ as the temperature is raised. This;model reproduces the structure of antiphase boundaries previously;observed with scanning tunneling microscopy, as well as the continuous;nature of the transition. To account for the observed transition;temperature, the energy cost of each charge rearrangement is 82 meV.;de la Figuera, Juan/E-7046-2010; Gallego Queipo, Silvia/J-3411-2012;de la Figuera, Juan/0000-0002-7014-4777;;1;0;0;0;1;1098-0121;WOS:000332163500007;;;J;Cazorla, Claudio;Iniguez, Jorge;Insights into the phase diagram of bismuth ferrite from quasiharmonic;free-energy calculations;PHYSICAL REVIEW B;88;21;214430;10.1103/PhysRevB.88.214430;DEC 30 2013;2013;We have used first-principles methods to investigate the phase diagram;of multiferroic bismuth ferrite (BiFeO3 or BFO), revealing the energetic;and vibrational features that control the occurrence of various relevant;structures. More precisely, we have studied the relative stability of;four low-energy BFO polymorphs by computing their free energies within;the quasiharmonic approximation, introducing a practical scheme that;allows us to account for the main effects of spin disorder. As expected,;we find that the ferroelectric ground state of the material (with R3c;space group) transforms into an orthorhombic paraelectric phase (Pnma);upon heating. We show that this transition is not significantly affected;by magnetic disorder, and that the occurrence of the Pnma structure;relies on its being vibrationally (although not elastically) softer than;the R3c phase. We also investigate a representative member of the family;of nanotwinned polymorphs recently predicted for BFO [S. Prosandeev et;al., Adv. Funct. Mater. 23, 234 (2013)] and discuss their possible;stabilization at the boundaries separating the R3c and Pnma regions in;the corresponding pressure-temperature phase diagram. Finally, we;elucidate the intriguing case of the so-called supertetragonal phases of;BFO: Our results explain why such structures have never been observed in;the bulk material, despite their being stable polymorphs of very low;energy. Quantitative comparison with experiment is provided whenever;possible, and the relative importance of various physical effects;(zero-point motion, spin fluctuations, thermal expansion) and technical;features (employed exchange-correlation energy density functional) is;discussed. Our work attests the validity and usefulness of the;quasiharmonic scheme to investigate the phase diagram of this complex;oxide, and prospective applications are discussed.;Iniguez, Jorge/B-6856-2009;Iniguez, Jorge/0000-0001-6435-3604;0;0;0;0;0;1098-0121;WOS:000332161300005;;;J;Chandrasekaran, Anand;Damjanovic, Dragan;Setter, Nava;Marzari, Nicola;Defect ordering and defect-domain-wall interactions in PbTiO3: A;first-principles study;PHYSICAL REVIEW B;88;21;214116;10.1103/PhysRevB.88.214116;DEC 30 2013;2013;The properties of ferroelectric materials, such as lead zirconate;titanate (PZT), are heavily influenced by the interaction of defects;with domain walls. These defects are either intrinsic or are induced by;the addition of dopants. We study here PbTiO3 (the end member of a key;family of solid solutions) in the presence of acceptor (Fe) and donor;(Nb) dopants, and the interactions of the different defects and defect;associates with the domain walls. For the case of iron acceptors, the;calculations point to the formation of defect associates involving an;iron substitutional defect and a charged oxygen vacancy (Fe-Ti'-V-O '').;This associate exhibits a strong tendency to align in the direction of;the bulk polarization; in fact, ordering of defects is also observed in;pure PbTiO3 in the form of lead-oxygen divacancies. Conversely,;calculations on donor-doped PbTiO3 do not indicate the formation of;polar defect complexes involving donor substitutions. Last, it is;observed that both isolated defects in donor-doped materials and defect;associates in acceptor-doped materials are more stable at 180 degrees.;domain walls. However, polar defect complexes lead to asymmetric;potentials at domain walls due to the interaction of the defect;polarization with the bulk polarization. The relative pinning;characteristics of different defects are then compared, to develop an;understanding of defect-domain-wall interactions in both doped and pure;PbTiO3. These results may also help in understanding hardening and;softening mechanisms in PZT.;Damjanovic, Dragan/A-8231-2008;Damjanovic, Dragan/0000-0002-9596-7438;3;1;0;0;3;1098-0121;WOS:000332161300002;;;J;Choi, Minseok;Janotti, Anderson;Van de Walle, Chris G.;Native point defects in LaAlO3: A hybrid functional study;PHYSICAL REVIEW B;88;21;214117;10.1103/PhysRevB.88.214117;DEC 30 2013;2013;We investigate the electronic structure of defects in LaAlO3 (LAO) and;their effects on electronic properties of bulk and heterostructures. Our;calculations indicate that vacancies have lower formation energies than;interstitials and antisites. The La vacancy (V-La) and the Al vacancy;(V-Al) are deep acceptors, while the oxygen vacancy (VO) is a deep;donor. The impact of these defects on the performance of;metal-oxide-semiconductor devices is analyzed by placing the LAO band;edges and defect levels with respect to the band edges of GaN, InGaAs,;and Si. V-O introduces levels in the gap or in the vicinity of the;semiconductor conduction band, resulting in carrier traps and/or leakage;current through the gate oxide, while V-La and V-Al are sources of;negative fixed charges. We also discuss how oxygen vacancies in LAO can;influence the observed two-dimensional electron gas (2DEG) in;LaAlO3/SrTiO3 heterostructures. We conclude that V-O in the LAO layer;may provide electrons that fill compensating surface states, resulting;in higher 2DEG densities, at least for modest LAO layer thicknesses.;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;4;0;0;0;4;1098-0121;WOS:000332161300003;;;J;Haham, Noam;Konczykowski, Marcin;Kuiper, Bouwe;Koster, Gertjan;Klein, Lior;Testing dependence of anomalous Hall effect on resistivity in SrRuO3 by;its increase with electron irradiation;PHYSICAL REVIEW B;88;21;214431;10.1103/PhysRevB.88.214431;DEC 30 2013;2013;We measure the anomalous Hall effect (AHE) in several patterns of the;itinerant ferromagnet SrRuO3 before and after the patterns are;irradiated with electrons. The irradiation increases the resistivity of;the patterns due to the introduction of point defects and we find that;the AHE coefficient R-s scales with the total resistivity before and;after irradiation which indicates that the AHE is determined by the;total resistivity. We discuss possible origins of slight deviations from;scaling that are observed at low temperature, particularly below 70 K.;0;0;0;0;0;1098-0121;WOS:000332161300006;;;J;Heinhold, R.;Williams, G. T.;Cooil, S. P.;Evans, D. A.;Allen, M. W.;Influence of polarity and hydroxyl termination on the band bending at;ZnO surfaces;PHYSICAL REVIEW B;88;23;235315;10.1103/PhysRevB.88.235315;DEC 30 2013;2013;Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and;real-time in situ XPS were used to study the thermal stability of the;hydroxyl termination and downward band bending on the polar surfaces of;ZnO single crystals. On the O-polar face, the position of the Fermi;level could be reversibly cycled between the conduction band and the;band gap over an energetic distance of approximately 0.8 eV (similar to;1/4 of the band gap) by controlling the surface H coverage using simple;ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with;H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike;transition in the electronic nature of the O-polar face was observed at;an H coverage of approximately 0.9 monolayers. For H coverage less than;this, semiconducting (depleted) O-polar surfaces were created that were;reasonably stable in UHV conditions. In contrast, the downward band;bending on the Zn-polar face was significantly more resilient, and;depleted surfaces could not be prepared by heat treatment alone.;3;0;0;0;3;1098-0121;WOS:000332163500005;;;J;Levy, Peter M.;Yang, Hongxin;Chshiev, Mairbek;Fert, Albert;Spin Hall effect induced by Bi impurities in Cu: Skew scattering and;side-jump;PHYSICAL REVIEW B;88;21;214432;10.1103/PhysRevB.88.214432;DEC 30 2013;2013;The spin Hall effect (SHE) has recently turned out to be an interesting;tool for the conversion between charge and spin currents, the conversion;factor being characterized by the spin Hall angle Phi(H). Large spin;Hall angles have been now measured in heavy metals like W(Phi(H) =;-0.33) and Cu doped with Bi impurities (Phi(H) = -0.24). In this article;we express the contributions to the SHE induced by skew scattering and;scattering with side-jump from Bi impurities in Cu, and we use ab initio;calculations of the electronic structure of CuBi alloys to estimate the;values of these two contributions. The predominant effect comes from;skew scattering; the spin Hall angle is negative in agreement with;experiments, but the calculated amplitude is smaller.;Chshiev, Mairbek/A-9742-2008; Yang, HongXin/H-5719-2012;Chshiev, Mairbek/0000-0001-9232-7622;;0;0;0;0;0;1098-0121;WOS:000332161300007;;;J;Lu, Wenlai;Yang, Ping;Song, Wen Dong;Chow, Gan Moog;Chen, Jing Sheng;Control of oxygen octahedral rotations and physical properties in SrRuO3;films;PHYSICAL REVIEW B;88;21;214115;10.1103/PhysRevB.88.214115;DEC 30 2013;2013;Control of octahedral rotations in the ABO(3) perovskite oxides has been;of great interest due to its potential in rationally discovering and;designing new multifunctional phases. In this study, we show that;octahedral rotations of the SrRuO3 films can be controlled by oxygen;vacancies as well as by interfacial coupling, which further determines;the physical properties. Half-integer reflections using high-resolution;synchrotron x-ray diffraction were carried out to determine the;octahedral rotation pattern of SrRuO3 films on SrTiO3 substrates. The;transition of RuO6 rotation pattern accompanied by the structural change;from monoclinic P2(1)/m to tetragonal F4/mmc can be understood from the;preference of oxygen vacancies in the SrO atomic plane and the coupling;of octahedra across the interface between film and substrate. The field;angle dependence of magnetoresistance further confirmed the structural;phase transition with changes in octahedral rotations. The monoclinic;phase has the uniaxial magnetic easy axis 30 away from the [001];direction towards the [010] direction while the tetragonal phase has;uniaxial magnetic easy axis along the fourfold axis which is;perpendicular to the film surface. This study demonstrates the ability;to control the octahedral rotations in perovskite films and its;importance when designing thin films and multilayers with desired;functional property.;Chen, Jingsheng/D-9107-2011; Yang, Ping/C-5612-2008;1;0;0;0;1;1098-0121;WOS:000332161300001;;;J;Marcano, N.;Algarabel, P. A.;Rodriguez Fernandez, J.;Magen, C.;Morellon, L.;Singh, Niraj K.;Gschneidner, K. A., Jr.;Pecharsky, V. K.;Ibarra, M. R.;Effects of pressure on the magnetic-structural and Griffiths-like;transitions in Dy5Si3Ge;PHYSICAL REVIEW B;88;21;214429;10.1103/PhysRevB.88.214429;DEC 30 2013;2013;Magnetization studies have been performed on a polycrystalline sample of;Dy5Si3Ge as a function of an applied magnetic field (up to 50 kOe) and;hydrostatic pressure (up to 10 kbar) in the 5-300 K temperature range.;The anomalous behavior of the magnetic susceptibility indicates that a;Griffiths-like phase exists at low magnetic fields and pressures up to;10 kbar. We present evidence that the high-temperature second-order;ferromagnetic transition can be coupled with the low-temperature;first-order crystallographic transformation into a single first-order;magnetic-crystallographic transformation using a magnetic field and;hydrostatic pressure as tuning parameters. The effect of pressure on the;Griffiths-like phase is reported and analyzed in the framework of the;complex competition between the interslab and intraslab magnetic;interactions.;Magen, Cesar/A-2825-2013; Morellon, Luis/K-6922-2014; Marcano Aguado, Noelia/F-9446-2010;
12:5:3:12 Influence of Mg-doped barriers on semipolar (20(2)over-bar1) multiple-quantum-well green light-emitting diodes
DOI:10.1063/1.3647560 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Huang, Chia-Yen;Yan, Qimin;Zhao, Yuji;Fujito, Kenji;Feezell, Daniel;Van de Walle, Chris G.;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:5:4:1 Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
DOI:10.1063/1.3449557 JN:APPLIED PHYSICS LETTERS PY:2010
TC:67 AU: Ling, Shih-Chun;Lu, Tien-Chang;Chang, Shih-Pang;Chen, Jun-Rong;Kuo, Hao-Chung;Wang, Shing-Chung;
12:5:4:2 Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
DOI:10.1063/1.3655903 JN:APPLIED PHYSICS LETTERS PY:2011
TC:39 AU: Wang, C. H.;Chang, S. P.;Ku, P. H.;Li, J. C.;Lan, Y. P.;Lin, C. C.;Yang, H. C.;Kuo, H. C.;Lu, T. C.;Wang, S. C.;Chang, C. Y.;
12:5:4:3 Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
DOI:10.1063/1.4759044 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Choi, Suk;Ji, Mi-Hee;Kim, Jeomoh;Kim, Hee Jin;Satter, Md. M.;Yoder, P. D.;Ryou, Jae-Hyun;Dupuis, Russell D.;Fischer, Alec M.;Ponce, Fernando A.;
12:5:4:4 Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
DOI:10.1063/1.4811698 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Ju, Z. G.;Liu, W.;Zhang, Z-H.;Tan, S. T.;Ji, Y.;Kyaw, Z. B.;Zhang, X. L.;Lu, S. P.;Zhang, Y. P.;Zhu, B. B.;Hasanov, N.;Sun, X. W.;Demir, H. V.;
12:5:4:5 InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
DOI:10.1063/1.4891334 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Zhang, Zi-Hui;Liu, Wei;Ju, Zhengang;Tan, Swee Tiam;Ji, Yun;Kyaw, Zabu;Zhang, Xueliang;Wang, Liancheng;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:5:4:6 Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
DOI:10.1063/1.4883894 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Zhang, Zi-Hui;Liu, Wei;Ju, Zhengang;Tan, Swee Tiam;Ji, Yun;Kyaw, Zabu;Zhang, Xueliang;Wang, Liancheng;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:5:4:7 A hole accelerator for InGaN/GaN light-emitting diodes
DOI:10.1063/1.4898588 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, Zi-Hui;Liu, Wei;Tan, Swee Tiam;Ji, Yun;Wang, Liancheng;Zhu, Binbin;Zhang, Yiping;Lu, Shunpeng;Zhang, Xueliang;Hasanov, Namig;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:5:4:8 On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
DOI:10.1063/1.4866041 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Zhang, Zi-Hui;Ji, Yun;Liu, Wei;Tan, Swee Tiam;Kyaw, Zabu;Ju, Zhengang;Zhang, Xueliang;Hasanov, Namig;Lu, Shunpeng;Zhang, Yiping;Zhu, Binbin;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:5:4:9 Effects of polarization field distribution on photoelectric properties of InGaN light-emitting diodes
DOI:10.1364/OME.4.001848 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Dang, Suihu;Li, Chunxia;Sun, Pei;Jia, Wei;Li, Tianbao;Xu, Bingshe;
12:5:4:10 High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
DOI:10.1063/1.4867023 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Chang, Chiao-Yun;Li, Hen;Lu, Tien-Chang;
12:5:4:11 Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
DOI:10.1063/1.3507891 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Wang, C. H.;Chang, S. P.;Chang, W. T.;Li, J. C.;Lu, Y. S.;Li, Z. Y.;Yang, H. C.;Kuo, H. C.;Lu, T. C.;Wang, S. C.;
12:5:4:12 Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes
DOI:10.1063/1.4817381 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Ji, Yun;Zhang, Zi-Hui;Kyaw, Zabu;Tan, Swee Tiam;Ju, Zhen Gang;Zhang, Xue Liang;Liu, Wei;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:5:4:13 Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11(2)over-bar2) semipolar versus (0001) polar planes
DOI:10.1063/1.4870840 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Ji, Yun;Liu, Wei;Erdem, Talha;Chen, Rui;Tan, Swee Tiam;Zhang, Zi-Hui;Ju, Zhengang;Zhang, Xueliang;Sun, Handong;Sun, Xiao Wei;Zhao, Yuji;DenBaars, Steven P.;Nakamura, Shuji;Demir, Hilmi Volkan;
12:5:5:1 Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence
DOI:10.1063/1.4861150 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Lin, Yue;Zhang, Yong;Liu, Zhiqiang;Su, Liqin;Zhang, Jihong;Wei, Tongbo;Chen, Zhong;
12:5:5:2 Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization
DOI:10.1063/1.3520139 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Wang, Jiaxing;Wang, Lai;Zhao, Wei;Hao, Zhibiao;Luo, Yi;
12:5:5:3 Correlation between carrier localization and efficiency droop in AlGaN epilayers
DOI:10.1063/1.4813259 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Mickevicius, J.;Tamulaitis, G.;Shur, M.;Shatalov, M.;Yang, J.;Gaska, R.;
12:5:5:4 Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
DOI:10.1063/1.4772549 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Lin, Yue;Zhang, Yong;Liu, Zhiqiang;Su, Liqin;Zhang, Jihong;Wei, Tongbo;Chen, Zhong;
12:5:5:5 Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
DOI:10.1063/1.3678029 JN:APPLIED PHYSICS LETTERS PY:2012
TC:21 AU: Ahn, Byung-Jun;Kim, Tae-Soo;Dong, Yanqun;Hong, Moon-Taek;Song, Jung-Hoon;Song, Jae-Ho;Yuh, Hwan-Kuk;Choi, Sung-Chul;Bae, Duk-Kyu;Moon, Youngboo;
12:5:5:6 Internal quantum efficiency in AlGaN with strong carrier localization
DOI:10.1063/1.4767657 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Mickevicius, J.;Tamulaitis, G.;Shur, M.;Shatalov, M.;Yang, J.;Gaska, R.;
12:5:5:7 Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
DOI:10.1063/1.3669377 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Huang, Shih-Cheng;Shen, Kun-Ching;Wuu, Dong-Sing;Tu, Po-Min;Kuo, Hao-Chung;Tu, Chia-Cheng;Horng, Ray-Hua;
12:5:5:8 Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
DOI:10.1063/1.3531957 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Chang, S. P.;Wang, C. H.;Chiu, C. H.;Li, J. C.;Lu, Y. S.;Li, Z. Y.;Yang, H. C.;Kuo, H. C.;Lu, T. C.;Wang, S. C.;
12:5:5:9 An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
DOI:10.1063/1.4736591 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:19 AU: Wang, Jiaxing;Wang, Lai;Wang, Lei;Hao, Zhibiao;Luo, Yi;Dempewolf, Anja;Muller, Mathias;Bertram, Frank;Christen, Juergen;
12:5:5:10 Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes
DOI:10.1063/1.4718612 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Lin, Yue;Gao, Yu-Lin;Lu, Yi-Jun;Zhu, Li-Hong;Zhang, Yong;Chen, Zhong;
12:5:5:11 Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes (vol 101, 252103, 2012)
DOI:10.1063/1.4821196 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Lin, Yue;Zhang, Yong;Liu, Zhiqiang;Su, Liqin;Zhang, Jihong;Wei, Tongbo;Chen, Zhong;
12:5:5:12 Technique to evaluate the diode ideality factor of light-emitting diodes
DOI:10.1063/1.3318285 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Masui, Hisashi;Nakamura, Shuji;DenBaars, Steven P.;
12:5:5:13 Degradation mechanism beyond device self-heating in high power light-emitting diodes
DOI:10.1063/1.3580264 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Yung, K. C.;Liem, H.;Choy, H. S.;Lun, W. K.;
12:5:5:14 Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
DOI:10.1007/s00339-012-6967-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Liu, Lei;Wang, Lei;Lu, Cimang;Li, Ding;Liu, Ningyang;Li, Lei;Yang, Wei;Cao, Wenyu;Chen, Weihua;Du, Weimin;Hu, Xiaodong;Feng, Zhe Chuan;Huang, Wei;Lee, Yueh-Chien;
12:5:5:15 High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3
DOI:10.1063/1.4891761 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Muhammed, M. M.;Peres, M.;Yamashita, Y.;Morishima, Y.;Sato, S.;Franco, N.;Lorenz, K.;Kuramata, A.;Roqan, I. S.;
12:5:6:1 Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
DOI:10.1063/1.3591967 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Tu, Po-Min;Chang, Chun-Yen;Huang, Shih-Cheng;Chiu, Ching-Hsueh;Chang, Jet-Rung;Chang, Wei-Ting;Wuu, Dong-Sing;Zan, Hsiao-Wen;Lin, Chien-Chung;Kuo, Hao-Chung;Hsu, Chih-Peng;
12:5:6:2 Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes
DOI:10.1063/1.3678197 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Yang, Wei;Li, Ding;Liu, Ningyang;Chen, Zhao;Wang, Lei;Liu, Lei;Li, Lei;Wan, Chenghao;Chen, Weihua;Hu, Xiaodong;Du, Weimin;
12:5:6:3 Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes
DOI:10.1063/1.3581080 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Zhang, Yun;Kao, Tsung-Ting;Liu, Jianping;Lochner, Zachary;Kim, Seong-Soo;Ryou, Jae-Hyun;Dupuis, Russell D.;Shen, Shyh-Chiang;
12:5:6:4 The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
DOI:10.1063/1.3571440 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Fu, Yi-Keng;Jiang, Ren-Hao;Lu, Yu-Hsuan;Chen, Bo-Chun;Xuan, Rong;Fang, Yen-Hsiang;Lin, Chia-Feng;Su, Yan-Kuin;Chen, Jenn-Fang;
12:5:6:5 Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum composition
DOI:10.1016/j.apsusc.2014.02.034 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Liu, Tong;Jiao, Shujie;Wang, Dongbo;Zhao, Liancheng;Yang, Tianpeng;Xiao, Zhiguo;
12:5:6:6 Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier
DOI:10.1063/1.4798388 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Alahyarizadeh, Gh;Hassan, Z.;Yam, F. K.;
12:5:6:7 Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
DOI:10.1063/1.4879252 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Yang, Yujue;Wang, Junxi;Li, Jinmin;Zeng, Yiping;
12:5:6:8 Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
DOI:10.1063/1.4768287 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Chen, P.;Feng, M. X.;Jiang, D. S.;Zhao, D. G.;Liu, Z. S.;Li, L.;Wu, L. L.;Le, L. C.;Zhu, J. J.;Wang, H.;Zhang, S. M.;Yang, H.;
12:5:6:9 Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers
DOI:10.1007/s00339-014-8321-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Yang, Yu-Jue;Zeng, Yi-Ping;
12:5:6:10 Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer
DOI:10.1016/j.jcrysgro.2014.10.01.3 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Chiu, C. H.;Lin, Y. W.;Tsai, M. T.;Lin, B. C.;Li, Z. Y.;Tu, P. M.;Huang, S. C.;Hsu, Earl;Uen, W. Y.;Lee, W. I.;Kuo, H. C.;
12:5:6:11 Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate
DOI:10.1364/OME.4.001632 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Lin, B. C.;Chiu, C. H.;Lee, C. Y.;Han, H. V.;Tu, P. M.;Chen, T. P.;Li, Z. Y.;Lee, P. T.;Lin, C. C.;Chi, G. C.;Chen, C. H.;Fan, B.;Chang, C. Y.;Kuo, H. C.;
12:5:7:1 The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
DOI:10.1063/1.3703062 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:38 AU: Hammersley, S.;Watson-Parris, D.;Dawson, P.;Godfrey, M. J.;Badcock, T. J.;Kappers, M. J.;McAleese, C.;Oliver, R. A.;Humphreys, C. J.;
12:5:7:2 Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
DOI:10.1063/1.4821454 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Yang, Fan;Zhang, Chunfeng;Shi, Chentian;Park, Min Joo;Kwak, Joon Seop;Jung, Sukkoo;Choi, Yoon-Ho;Wu, Xuewei;Wang, Xiaoyong;Xiao, Min;
12:5:7:3 Time-of-flight measurements of charge carrier diffusion in InxGa1-xN/GaN quantum wells
DOI:10.1103/PhysRevB.84.035324 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Danhof, J.;Schwarz, U. T.;Kaneta, A.;Kawakami, Y.;
12:5:7:4 High excitation carrier density recombination dynamics of InGaN/GaNquantum well structures: Possible relevance to efficiency droop
DOI:10.1063/1.4781398 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Davies, M. J.;Badcock, T. J.;Dawson, P.;Kappers, M. J.;Oliver, R. A.;Humphreys, C. J.;
12:5:7:5 Effects of exciton localization on internal quantum efficiency of InGaN nanowires
DOI:10.1063/1.4825124 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Murotani, Hideaki;Yamada, Yoichi;Tabata, Takuya;Honda, Yoshio;Yamaguchi, Masahito;Amano, Hiroshi;
12:5:8:1 Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes
DOI:10.1063/1.4901828 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Quan, Zhijue;Wang, Li;Zheng, Changda;Liu, Junlin;Jiang, Fengyi;
12:5:8:2 Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes
DOI:10.1063/1.4896362 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Li, Yufeng;Yun, Feng;Su, Xilin;Liu, Shuo;Ding, Wen;Hou, Xun;
12:5:8:3 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
DOI:10.1063/1.4772548 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Le, L. C.;Zhao, D. G.;Jiang, D. S.;Li, L.;Wu, L. L.;Chen, P.;Liu, Z. S.;Li, Z. C.;Fan, Y. M.;Zhu, J. J.;Wang, H.;Zhang, S. M.;Yang, H.;
12:5:8:4 Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes
DOI:10.1063/1.4880731 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Wu, Xiaoming;Liu, Junlin;Quan, Zhijue;Xiong, Chuanbing;Zheng, Changda;Zhang, Jianli;Mao, Qinghua;Jiang, Fengyi;
12:5:8:5 Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate
DOI:10.1063/1.3640229 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Liu, Junlin;Feng, Feifei;Zhou, Yinhua;Zhang, Jianli;Jiang, Fengyi;
12:5:8:6 Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
DOI:10.1063/1.4824801 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Le, L. C.;Zhao, D. G.;Jiang, D. S.;Li, L.;Wu, L. L.;Chen, P.;Liu, Z. S.;Yang, J.;Li, X. J.;He, X. G.;Zhu, J. J.;Wang, H.;Zhang, S. M.;Yang, H.;
12:5:8:7 Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes
DOI:10.1063/1.4870256 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Song, Jung-Hoon;Kim, Tae-Soo;Park, Ki-Nam;Lee, Jin-Gyu;Hong, Soon-Ku;Cho, Sung-Royng;Lee, Seogwoo;Cho, Meoung Whan;
12:5:8:8 The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes
DOI:10.1063/1.4820450 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Wu, Xiaoming;Liu, Junlin;Xiong, Chuanbing;Zhang, Jianli;Quan, Zhijue;Mao, Qinghua;Jiang, Fengyi;
12:5:8:9 Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes
DOI:10.1063/1.4812810 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Han, Sang-Heon;Lee, Dong-Yul;Shim, Hyun-Wook;Lee, Jeong Wook;Kim, Dong-Joon;Yoon, Sukho;Kim, Young Sun;Kim, Sung-Tae;
12:5:8:10 Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
DOI:10.1063/1.4772506 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Moe, Craig G.;Garrett, Gregory A.;Rotella, Paul;Shen, Hongen;Wraback, Michael;Shatalov, Max;Sun, Wenhong;Deng, Jianyu;Hu, Xuhong;Bilenko, Yuri;Yang, Jinwei;Gaska, Remis;
12:5:9:1 Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
DOI:10.1063/1.4739419 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Li, X.;Okur, S.;Zhang, F.;Hafiz, S. A.;Avrutin, V.;Oezguer, Ue;Morkoc, H.;Jarasiunas, K.;
12:5:9:2 Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
DOI:10.1063/1.3460271 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:26 AU: Ni, X.;Li, X.;Lee, J.;Liu, S.;Avrutin, V.;Ozgur, U.;Morkoc, H.;Matulionis, A.;
12:5:9:3 The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes
DOI:10.1063/1.4817387 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Zhang, F.;Li, X.;Hafiz, S.;Okur, S.;Avrutin, V.;Oezguer, Ue.;Morkoc, H.;
12:5:9:4 Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells
DOI:10.1063/1.4739445 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Huang, Shanjin;Chen, Zimin;Xian, Yulun;Fan, Bingfeng;Zheng, Zhiyuan;Wu, Zhisheng;Jiang, Hao;Wang, Gang;
12:5:9:5 Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage
DOI:10.1063/1.3642955 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Huang, Shanjin;Xian, Yulun;Fan, Bingfeng;Zheng, Zhiyuan;Chen, Zimin;Jia, Weiqing;Jiang, Hao;Wang, Gang;
12:5:9:6 Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes
DOI:10.1063/1.4759003 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Armstrong, A.;Henry, T. A.;Koleske, D. D.;Crawford, M. H.;Westlake, K. R.;Lee, S. R.;
12:5:9:7 The effects of thin capping layers between quantum wells and barriers on the quantum efficiency enhancement in InGaN-based light emitting diodes
DOI:10.1063/1.4820840 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Li, X.;Yeh, Yea-Chuan Milton;Yang, S. L.;Chen, J. C.;Chuang, Chih-Li;
12:5:9:8 Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters
DOI:10.1063/1.4721411 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Kisin, Mikhail V.;Chuang, Chih-Li;El-Ghoroury, Hussein S.;
12:5:9:9 Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
DOI:10.1063/1.4868719 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Meneghini, M.;la Grassa, M.;Vaccari, S.;Galler, B.;Zeisel, R.;Drechsel, P.;Hahn, B.;Meneghesso, G.;Zanoni, E.;
12:5:9:10 Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures
DOI:10.1063/1.3427540 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Kisin, Mikhail V.;El-Ghoroury, Hussein S.;
12:5:10:1 Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
DOI:10.1063/1.3276156 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:37 AU: Gong, Zheng;Jin, Shirong;Chen, Yujie;McKendry, Jonathan;Massoubre, David;Watson, Ian M.;Gu, Erdan;Dawson, Martin D.;
12:5:10:2 Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
DOI:10.1063/1.4769835 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Tian, Pengfei;McKendry, Jonathan J. D.;Gong, Zheng;Guilhabert, Benoit;Watson, Ian M.;Gu, Erdan;Chen, Zhizhong;Zhang, Guoyi;Dawson, Martin D.;
12:5:10:3 Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
DOI:10.1063/1.4862298 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:9 AU: Tian, Pengfei;McKendry, Jonathan J. D.;Gong, Zheng;Zhang, Shuailong;Watson, Scott;Zhu, Dandan;Watson, Ian M.;Gu, Erdan;Kelly, Anthony E.;Humphreys, Colin J.;Dawson, Martin D.;
12:5:10:4 III-Nitride full-scale high-resolution microdisplays
DOI:10.1063/1.3615679 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Day, Jacob;Li, J.;Lie, D. Y. C.;Bradford, Charles;Lin, J. Y.;Jiang, H. X.;
12:5:10:5 Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy
DOI:10.1116/1.4769732 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Newman, Scott;Gallinat, Chad;Wright, Jonathan;Enck, Ryan;Sampath, Anand;Shen, Hongen;Reed, Meredith;Wraback, Michael;
12:5:11:1 Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
DOI:10.1063/1.4862026 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Aleksiejunas, R.;Gelzinyte, K.;Nargelas, S.;Jarasiunas, K.;Vengris, M.;Armour, E. A.;Byrnes, D. P.;Arif, R. A.;Lee, S. M.;Papasouliotis, G. D.;
12:5:11:2 Impact of active layer design on InGaN radiative recombination coefficient and LED performance
DOI:10.1063/1.3699199 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:18 AU: Li, X.;Okur, S.;Zhang, F.;Avrutin, V.;Oezguer, Ue;Morkoc, H.;Hong, S. M.;Yen, S. H.;Hsu, T. S.;Matulionis, A.;
12:5:11:3 Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
DOI:10.1063/1.4793637 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Jarasiunas, K.;Nargelas, S.;Aleksiejunas, R.;Miasojedovas, S.;Vengris, M.;Okur, S.;Morkoc, H.;Oezguer, U.;Giesen, C.;Tuna, Oe;Heuken, M.;
12:5:11:4 The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
DOI:10.1063/1.3587176 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Zhu, J. H.;Zhang, S. M.;Wang, H.;Zhao, D. G.;Zhu, J. J.;Liu, Z. S.;Jiang, D. S.;Qiu, Y. X.;Yang, H.;
12:5:11:5 Room temperature excitonic recombination in GaInN/GaN quantum wells
DOI:10.1063/1.4830366 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Langer, Torsten;Chernikov, Alexey;Kalincev, Dimitri;Gerhard, Marina;Bremers, Heiko;Rossow, Uwe;Koch, Martin;Hangleiter, Andreas;
12:5:11:6 Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes
DOI:10.1063/1.4867647 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kim, Kyu-Sang;Han, Dong-Pyo;Kim, Hyun-Sung;Shim, Jong-In;
12:5:11:7 Impact of active layer design on InGaN radiative recombination coefficient and LED performance (vol 111, pg 063112, 2012)
DOI:10.1063/1.4718913 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Li, X.;Okur, S.;Zhang, F.;Avrutin, V.;Oezguer, Ue.;Morkoc, H.;Hong, S. M.;Yen, S. H.;Hsu, T. C.;Matulionis, A.;
12:5:12:1 Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers
DOI:10.1063/1.3633268 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Kuo, Yen-Kuang;Wang, Tsun-Hsin;Chang, Jih-Yuan;Tsai, Miao-Chan;
12:5:12:2 Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
DOI:10.1063/1.3678341 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Kuo, Yen-Kuang;Wang, Tsun-Hsin;Chang, Jih-Yuan;
12:5:12:3 Spectral competition of chirped dual-wavelength emission in monolithic InGaN multiple-quantum well light-emitting diodes
DOI:10.1063/1.4803942 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Wang, Tsun-Hsin;Kuo, Yen-Kuang;
12:5:12:4 Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions
DOI:10.1063/1.4864311 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Piprek, Joachim;
12:5:12:5 Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range
DOI:10.1063/1.4819850 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: You, Guanjun;Liu, Jie;Jiang, Zhenyu;Zhu, Yiming;Chen, Aping;Hu, Yong;Xiong, Feng;Henderson, Ron H.;Zhuang, Songlin;Xu, Jian;
12:5:13:1 Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
DOI:10.1063/1.4769228 JN:APPLIED PHYSICS LETTERS PY:2012
TC:24 AU: Cich, Michael J.;Aldaz, Rafael I.;Chakraborty, Arpan;David, Aurelien;Grundmann, Michael J.;Tyagi, Anurag;Zhang, Meng;Steranka, Frank M.;Krames, Michael R.;
12:5:13:2 High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes
DOI:10.1063/1.4903297 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: David, Aurelien;Hurni, Christophe A.;Aldaz, Rafael I.;Cich, Michael J.;Ellis, Bryan;Huang, Kevin;Steranka, Frank M.;Krames, Michael R.;
12:5:14:1 Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
DOI:10.1063/1.4894464 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: McBride, Patrick M.;Yan, Qimin;Van de Walle, Chris G.;
12:5:14:2 Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes
DOI:10.1063/1.3327425 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Lee, Wonseok;Kim, Min-Ho;Zhu, Di;Noemaun, Ahmed N.;Kim, Jong Kyu;Schubert, E. F.;
12:5:14:3 Efficient Spin-Light Emitting Diodes Based on InGaN/GaN Quantum Disks at Room Temperature: A New Self-Polarized Paradigm
DOI:10.1021/nl5003312 JN:NANO LETTERS PY:2014
TC:1 AU: Chen, J. Y.;Ho, C. Y.;Lu, M. L.;Chu, L. J.;Chen, K. C.;Chu, S. W.;Chen, W.;Mou, C. Y.;Chen, Y. F.;
12:6:1 Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)
DOI:10.1021/nl102308k JN:NANO LETTERS PY:2010
TC:100 AU: Krogstrup, Peter;Popovitz-Biro, Ronit;Johnson, Erik;Madsen, Morten Hannibal;Nygard, Jesper;Shtrikman, Hadas;
12:6:2 Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
DOI:10.1088/0957-4484/21/38/385602 JN:NANOTECHNOLOGY PY:2010
TC:68 AU: Plissard, Sebastien;Dick, Kimberly A.;Larrieu, Guilhem;Godey, Sylvie;Addad, Ahmed;Wallart, Xavier;Caroff, Philippe;
12:6:3 Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates
DOI:10.1021/nl201902w JN:NANO LETTERS PY:2011
TC:65 AU: Uccelli, Emanuele;Arbiol, Jordi;Magen, Cesar;Krogstrup, Peter;Russo-Averchi, Eleonora;Heiss, Martin;Mugny, Gabriel;Morier-Genoud, Francois;Nygard, Jesper;Ramon Morante, Joan;Fontcuberta i Morral, Anna;
12:6:4 Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
DOI:10.1103/PhysRevB.82.035302 JN:PHYSICAL REVIEW B PY:2010
TC:74 AU: Cirlin, G. E.;Dubrovskii, V. G.;Samsonenko, Yu. B.;Bouravleuv, A. D.;Durose, K.;Proskuryakov, Y. Y.;Mendes, Budhikar;Bowen, L.;Kaliteevski, M. A.;Abram, R. A.;Zeze, Dagou;
12:6:5 Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications
DOI:10.1021/nl104316t JN:NANO LETTERS PY:2011
TC:67 AU: Breuer, Steffen;Pfueller, Carsten;Flissikowski, Timur;Brandt, Oliver;Grahn, Holger T.;Geelhaar, Lutz;Riechert, Henning;
12:6:6 Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer
DOI:10.1021/nl404085a JN:NANO LETTERS PY:2014
TC:18 AU: Conesa-Boj, Sonia;Kriegner, Dominik;Han, Xiang-Lei;Plissard, Sebastien;Wallart, Xavier;Stangl, Julian;Fontcuberta i Morral, Anna;Caroff, Philippe;
12:6:7 InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
DOI:10.1021/nl202676b JN:NANO LETTERS PY:2011
TC:57 AU: Shin, Jae Cheol;Kim, Kyou Hyun;Yu, Ki Jun;Hu, Hefei;Yin, Leijun;Ning, Cun-Zheng;Rogers, John A.;Zuo, Jian-Min;Li, Xiuling;
12:6:8 III-V nanowire arrays: growth and light interaction
DOI:10.1088/0957-4484/25/1/014015 JN:NANOTECHNOLOGY PY:2014
TC:20 AU: Heiss, M.;Russo-Averchi, E.;Dalmau-Mallorqui, A.;Tuetuencueoglu, G.;Matteini, F.;Rueffer, D.;Conesa-Boj, S.;Demichel, O.;Alarcon-Llado, E.;Fontcuberta i Morral, A.;
12:6:9 Growth Mechanism of Self-Catalyzed Group III-V Nanowires
DOI:10.1021/nl1022699 JN:NANO LETTERS PY:2010
TC:77 AU: Mandl, Bernhard;Stangl, Julian;Hilner, Emelie;Zakharov, Alexei A.;Hillerich, Karla;Dey, Anil W.;Samuelson, Lars;Bauer, Guenther;Deppert, Knut;Mikkelsen, Anders;
12:6:10 Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography
DOI:10.1021/nl404376m JN:NANO LETTERS PY:2014
TC:15 AU: Munshi, A. M.;Dheeraj, D. L.;Fauske, V. T.;Kim, D. C.;Huh, J.;Reinertsen, J. F.;Ahtapodov, L.;Lee, K. D.;Heidari, B.;van Helvoort, A. T. J.;Fimland, B. O.;Weman, H.;
12:6:11 Impact of the Liquid Phase Shape on the Structure of III-V Nanowires
DOI:10.1103/PhysRevLett.106.125505 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:33 AU: Krogstrup, Peter;Curiotto, Stefano;Johnson, Erik;Aagesen, Martin;Nygard, Jesper;Chatain, Dominique;
12:6:12 High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
DOI:10.1088/0957-4484/22/27/275602 JN:NANOTECHNOLOGY PY:2011
TC:50 AU: Plissard, S.;Larrieu, G.;Wallart, X.;Caroff, P.;
12:6:13 Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires
DOI:10.1021/nl2019382 JN:NANO LETTERS PY:2011
TC:32 AU: Rudolph, Daniel;Hertenberger, Simon;Bolte, Stefanie;Paosangthong, Watcharapong;Spirkoska, Dance;Doeblinger, Markus;Bichler, Max;Finley, Jonathan J.;Abstreiter, Gerhard;Koblmueller, Gregor;
12:6:14 New Mode of Vapor-Liquid-Solid Nanowire Growth
DOI:10.1021/nl104238d JN:NANO LETTERS PY:2011
TC:55 AU: Dubrovskii, V. G.;Cirlin, G. E.;Sibirev, N. V.;Jabeen, F.;Harmand, J. C.;Werner, P.;
12:6:15 Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
DOI:10.1063/1.3367746 JN:APPLIED PHYSICS LETTERS PY:2010
TC:39 AU: Plissard, S.;Dick, K. A.;Wallart, X.;Caroff, P.;
12:6:16 Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
DOI:10.1063/1.3567496 JN:APPLIED PHYSICS LETTERS PY:2011
TC:29 AU: Hertenberger, S.;Rudolph, D.;Bolte, S.;Doeblinger, M.;Bichler, M.;Spirkoska, D.;Finley, J. J.;Abstreiter, G.;Koblmueller, G.;
12:6:17 Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
DOI:10.1016/j.jcrysgro.2012.05.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:31 AU: Rieger, Torsten;Heiderich, Sonja;Lenk, Steffi;Lepsa, Mihail Ion;Gruetzmacher, Detlev;
12:6:18 Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
DOI:10.1063/1.3525610 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:49 AU: Hertenberger, S.;Rudolph, D.;Bichler, M.;Finley, J. J.;Abstreiter, G.;Koblmueller, G.;
12:6:19 Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
DOI:10.1088/0957-4484/21/36/365602 JN:NANOTECHNOLOGY PY:2010
TC:42 AU: Koblmueller, G.;Hertenberger, S.;Vizbaras, K.;Bichler, M.;Bao, F.;Zhang, J-P;Abstreiter, G.;
12:6:20 Simultaneous Integration of Different Nanowires on Single Textured Si (100) Substrates
DOI:10.1021/nl504854v JN:NANO LETTERS PY:2015
TC:0 AU: Rieger, Torsten;Rosenbach, Daniel;Mussler, Gregor;Schaepers, Thomas;Gruetzmacher, Detlev;Lepsa, Mihail Ion;
12:6:21 Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)
DOI:10.1016/j.jcrysgro.2013.03.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:14 AU: Munshi, Abdul Mazid;Dheeraj, Dasa L.;Todorovic, Jelena;van Helvoort, Antonius T. J.;Weman, Helge;Fimland, Bjorn-Ove;
12:6:22 Experimental determination of adatom diffusion lengths for growth of InAs nanowires
DOI:10.1016/j.jcrysgro.2012.12.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:12 AU: Madsen, Morten Hannibal;Krogstrup, Peter;Johnson, Erik;Venkatesan, Sriram;Muehlbauer, Erika;Scheu, Christina;Sorensen, Claus B.;Nygard, Jesper;
12:6:23 Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering
DOI:10.1021/nn304526k JN:ACS NANO PY:2012
TC:13 AU: Conesa-Boj, Sonia;Russo-Averchi, Eleonora;Dalmau-Mallorqui, Anna;Trevino, Jacob;Pecora, Emanuele F.;Forestiere, Carlo;Handin, Alex;Ek, Martin;Zweifel, Ludovit;Wallenberg, L. Reine;Rueffer, Daniel;Heiss, Martin;Troadec, David;Dal Negro, Luca;Caroff, Philippe;Fontcuberta i Morral, Anna;
12:6:24 Si-InAs heterojunction Esaki tunnel diodes with high current densities
DOI:10.1063/1.3499365 JN:APPLIED PHYSICS LETTERS PY:2010
TC:44 AU: Bjork, M. T.;Schmid, H.;Bessire, C. D.;Moselund, K. E.;Ghoneim, H.;Karg, S.;Lortscher, E.;Riel, H.;
12:6:25 Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration
DOI:10.1021/nn4014774 JN:ACS NANO PY:2013
TC:18 AU: Shin, Jae Cheol;Lee, Ari;Mohseni, Parsian Katal;Kim, Do Yang;Yu, Lan;Kim, Jae Hun;Kim, Hyo Jin;Choi, Won Jun;Wasserman, Daniel;Choi, Kyoung Jin;Li, Xiuling;
12:6:26 High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
DOI:10.1063/1.4738769 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Hertenberger, S.;Funk, S.;Vizbaras, K.;Yadav, A.;Rudolph, D.;Becker, J.;Bolte, S.;Doeblinger, M.;Bichler, M.;Scarpa, G.;Lugli, P.;Zardo, I.;Finley, J. J.;Amann, M. -C.;Abstreiter, G.;Koblmueller, G.;
12:6:27 Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
DOI:10.1021/nl301185x JN:NANO LETTERS PY:2012
TC:35 AU: Dick, Kimberly A.;Bolinsson, Jessica;Borg, B. Mattias;Johansson, Jonas;
12:6:28 Role of microstructure on optical properties in high-uniformity In1-xGaxAs nanowire arrays: Evidence of a wider wurtzite band gap
DOI:10.1103/PhysRevB.87.205303 JN:PHYSICAL REVIEW B PY:2013
TC:8 AU: Morkoetter, Stefanie;Funk, Stefan;Liang, Mengyu;Doeblinger, Markus;Hertenberger, Simon;Treu, Julian;Rudolph, Daniel;Yadav, Anandi;Becker, Jonathan;Bichler, Max;Scarpa, Giuseppe;Lugli, Paolo;Zardo, Ilaria;Finley, Jonathan J.;Abstreiter, Gerhard;Koblmueller, Gregor;
12:6:29 Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates
DOI:10.1021/nl500428v JN:NANO LETTERS PY:2014
TC:14 AU: Dimakis, Emmanouil;Jahn, Uwe;Ramsteiner, Manfred;Tahraoui, Abbes;Grandal, Javier;Kong, Xiang;Marquardt, Oliver;Trampert, Achim;Riechert, Henning;Geelhaar, Lutz;
12:6:30 Effects of stacking variations on the lattice dynamics of InAs nanowires
DOI:10.1103/PhysRevB.84.155301 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Hoermann, N. G.;Zardo, I.;Hertenberger, S.;Funk, S.;Bolte, S.;Doeblinger, M.;Koblmueller, G.;Abstreiter, G.;
12:6:31 Direct Imaging of Single Au Atoms Within GaAs Nanowires
DOI:10.1021/nl300314k JN:NANO LETTERS PY:2012
TC:46 AU: Bar-Sadan, Maya;Barthel, Juri;Shtrikman, Hadas;Houben, Lothar;
12:6:32 Vertical III-V Nanowire Device Integration on Si(100)
DOI:10.1021/nl404743j JN:NANO LETTERS PY:2014
TC:12 AU: Borg, Mattias;Schmid, Heinz;Moselund, Kirsten E.;Signorello, Giorgio;Gignac, Lynne;Bruley, John;Breslin, Chris;Das Kanungo, Pratyush;Werner, Peter;Riel, Heike;
12:6:33 Lattice-Matched InGaAs-InAlAs Core-Shell Nanowires with Improved Luminescence and Photoresponse Properties
DOI:10.1021/acs.nanolett.5b00979 JN:NANO LETTERS PY:2015
TC:0 AU: Treu, Julian;Stettner, Thomas;Watzinger, Marc;Morkoetter, Stefanie;Doeblinger, Markus;Matich, Sonja;Saller, Kai;Bichler, Max;Abstreiter, Gerhard;Finley, Jonathan J.;Stangl, Julian;Kobmueller, Gregor;
12:6:34 Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
DOI:10.1063/1.4768001 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Yang, Tao;Hertenberger, Simon;Morkoetter, Stefanie;Abstreiter, Gerhard;Koblmueller, Gregor;
12:6:35 InAs nanowire growth on oxide-masked < 111 > silicon
DOI:10.1016/j.jcrysgro.2012.01.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:18 AU: Bjoerk, Mikael T.;Schmid, Heinz;Breslin, Chris M.;Gignac, Lynne;Riel, Heike;
12:6:36 Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]
DOI:10.1088/0957-4484/24/43/435603 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Russo-Averchi, E.;Dalmau-Mallorqui, A.;Canales-Mundet, I.;Tuetuencueoglu, G.;Alarcon-Llado, E.;Heiss, M.;Rueffer, D.;Conesa-Boj, S.;Caroff, P.;Fontcuberta i Morral, A.;
12:6:37 Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes
DOI:10.1021/nl202103a JN:NANO LETTERS PY:2011
TC:37 AU: Bessire, Cedric D.;Bjoerk, Mikael T.;Schmid, Heinz;Schenk, Andreas;Reuter, Kathleen B.;Riel, Heike;
12:6:38 InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires
DOI:10.1021/nl504690r JN:NANO LETTERS PY:2015
TC:0 AU: Scarpellini, David;Somaschini, Claudio;Fedorov, Alexey;Bietti, Sergio;Frigeri, Cesare;Grillo, Vincenzo;Esposito, Luca;Salvalaglio, Marco;Marzegalli, Anna;Montalenti, Francesco;Bonera, Emiliano;Medaglia, Pier Gianni;Sanguinetti, Stefano;
12:6:39 Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires
DOI:10.1016/j.jcrysgro.2015.01.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Russo-Averchi, E.;Tutuncuoglu, G.;Dalmau-Mallorqui, A.;Mundet, I. Canales;de la Mata, M.;Rueffer, D.;Arbiol, J.;Conesa-Boj, S.;Fontcuberta i Morral, A.;
12:6:40 Selective-area growth of III-V nanowires and their applications
DOI:10.1557/jmr.2011.103 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:20 AU: Tomioka, Katsuhiro;Ikejiri, Keitaro;Tanaka, Tomotaka;Motohisa, Junichi;Hara, Shinjiroh;Hiruma, Kenji;Fukui, Takashi;
12:6:41 Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy
DOI:10.1088/0957-4484/21/43/435601 JN:NANOTECHNOLOGY PY:2010
TC:31 AU: Bauer, Benedikt;Rudolph, Andreas;Soda, Marcello;Fontcuberta i Morral, Anna;Zweck, Josef;Schuh, Dieter;Reiger, Elisabeth;
12:6:42 Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
DOI:10.1088/0957-4484/23/23/235602 JN:NANOTECHNOLOGY PY:2012
TC:13 AU: Hertenberger, S.;Rudolph, D.;Becker, J.;Bichler, M.;Finley, J. J.;Abstreiter, G.;Koblmueller, G.;
12:6:43 Enhanced Luminescence Properties of InAs-InAsP Core-Shell Nanowires
DOI:10.1021/nl403341x JN:NANO LETTERS PY:2013
TC:5 AU: Treu, Julian;Bormann, Michael;Schmeiduch, Hannes;Doeblinger, Markus;Morkoetter, Stefanie;Matich, Sonja;Wiecha, Peter;Saller, Kai;Mayer, Benedikt;Bichler, Max;Amann, Markus-Christian;Finley, Jonathan J.;Abstreiter, Gerhard;Koblmueller, Gregor;
12:6:44 Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
DOI:10.1063/1.4891427 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Rudolph, D.;Schweickert, L.;Morkoetter, S.;Loitsch, B.;Hertenberger, S.;Becker, J.;Bichler, M.;Abstreiter, G.;Finley, J. J.;Koblmueller, G.;
12:6:45 Model of patterned self-assisted nanowire growth
DOI:10.1088/0957-4484/25/41/415304 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Gibson, Sandra J.;LaPierre, Ray R.;
12:6:46 Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon
DOI:10.1021/nl302490y JN:NANO LETTERS PY:2012
TC:11 AU: Couto, O. D. D., Jr.;Sercombe, D.;Puebla, J.;Otubo, L.;Luxmoore, I. J.;Sich, M.;Elliott, T. J.;Chekhovich, E. A.;Wilson, L. R.;Skolnick, M. S.;Liu, H. Y.;Tartakovskii, A. I.;
12:6:47 Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires
DOI:10.1021/nl303323t JN:NANO LETTERS PY:2012
TC:15 AU: Yu, Xuezhe;Wang, Hailong;Lu, Jun;Zhao, Jianhua;Misuraca, Jennifer;Xiong, Peng;von Molnar, Stephan;
12:6:48 Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires
DOI:10.1021/acs.nanolett.5b02226 JN:NANO LETTERS PY:2015
TC:0 AU: Dubrovskii, V. G.;Xu, T.;Alvarez, A. Diaz;Plissard, S. R.;Caroff, P.;Glas, F.;Grandidier, B.;
12:6:49 Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires
DOI:10.1021/acs.nanolett.5b01721 JN:NANO LETTERS PY:2015
TC:0 AU: Mankin, Max N.;Day, Robert W.;Gao, Ruixuan;No, You-Shin;Kim, Sun-Kyung;McClelland, Arthur A.;Bell, David C.;Park, Hong-Gyu;Lieber, Charles M.;
12:6:50 Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy
DOI:10.1021/nl501565b JN:NANO LETTERS PY:2014
TC:1 AU: Zhang, Yunyan;Wu, Jiang;Aagesen, Martin;Holm, Jeppe;Hatch, Sabina;Tang, Mingchu;Huo, Suguo;Liu, Huiyun;
12:6:51 Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires
DOI:10.1063/1.3664133 JN:AIP ADVANCES PY:2011
TC:16 AU: Ambrosini, S.;Fanetti, M.;Grillo, V.;Franciosi, A.;Rubini, S.;
12:6:52 Tunnel field-effect transistor using InAs nanowire/Si heterojunction
DOI:10.1063/1.3558729 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Tomioka, Katsuhiro;Fukui, Takashi;
12:6:53 Diameter dependent optical emission properties of In As nanowires grown on Si
DOI:10.1063/1.4739001 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Koblmueller, G.;Vizbaras, K.;Hertenberger, S.;Bolte, S.;Rudolph, D.;Becker, J.;Doeblinger, M.;Amann, M. -C.;Finley, J. J.;Abstreiter, G.;
12:6:54 Droplet destabilization during Bi catalyzed vapor-liquuid-solid growth of GaAs
DOI:10.1063/1.4868677 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: DeJarld, M.;Nothern, D.;Millunchick, J. M.;
12:6:55 In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires
DOI:10.1088/0957-4484/22/19/195601 JN:NANOTECHNOLOGY PY:2011
TC:22 AU: Heiss, Martin;Ketterer, Bernt;Uccelli, Emanuele;Ramon Morante, Joan;Arbiol, Jordi;Fontcuberta i Morral, Anna;
12:6:56 Self-catalyzed VLS grown InAs nanowires with twinning superlattices
DOI:10.1088/0957-4484/24/33/335601 JN:NANOTECHNOLOGY PY:2013
TC:14 AU: Grap, Th;Rieger, T.;Bloemers, Ch;Schaepers, Th;Gruetzmacher, D.;Lepsa, M. I.;
12:6:57 Control over the Number Density and Diameter of GaAs Nanowires on Si(111) Mediated by Droplet Epitaxy
DOI:10.1021/nl401404w JN:NANO LETTERS PY:2013
TC:13 AU: Somaschini, Claudio;Bietti, Sergio;Trampert, Achim;Jahn, Uwe;Hauswald, Christian;Riechert, Henning;Sanguinetti, Stefano;Geelhaar, Lutz;
12:6:58 Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study
DOI:10.1063/1.3678185 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Kim, Young Heon;Park, Dong Woo;Lee, Sang Jun;
12:6:59 Growth of Straight InAs-on-GaAs Nanowire Heterostructures
DOI:10.1021/nl202051w JN:NANO LETTERS PY:2011
TC:19 AU: Messing, Maria E.;Wong-Leung, Jennifer;Zanolli, Zeila;Joyce, Hannah J.;Tan, H. Hoe;Gao, Qiang;Wallenberg, L. Reine;Johansson, Jonas;Jagadish, Chennupati;
12:6:60 Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy
DOI:10.1021/nl401981u JN:NANO LETTERS PY:2013
TC:11 AU: Zhang, Yunyan;Aagesen, Martin;Holm, Jeppe V.;Jorgensen, Henrik I.;Wu, Jiang;Liu, Huiyun;
12:6:61 Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates
DOI:10.1016/j.jcrysgro.2015.05.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Wang, Xiaoye;Du, Wenna;Yang, Xiaoguang;Zhang, Xingwang;Yang, Tao;
12:6:62 Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon
DOI:10.1088/0957-4484/24/40/405707 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Alarcon-Llado, Esther;Conesa-Boj, Sonia;Wallart, Xavier;Caroff, Philippe;Fontcuberta i Morral, Anna;
12:6:63 In-situ x-ray characterization of wurtzite formation in GaAs nanowires
DOI:10.1063/1.3688489 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Krogstrup, Peter;Madsen, Morten Hannibal;Hu, Wen;Kozu, Miwa;Nakata, Yuka;Nygard, Jesper;Takahasi, Masamitu;Feidenhans'l, Robert;
12:6:64 Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
DOI:10.1063/1.3579449 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Ambrosini, S.;Fanetti, M.;Grillo, V.;Franciosi, A.;Rubini, S.;
12:6:65 Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays
DOI:10.1021/nl404737r JN:NANO LETTERS PY:2014
TC:5 AU: Arlauskas, Andrius;Treu, Julian;Saller, Kai;Beleckaite, Ieva;Koblmueller, Gregor;Krotkus, Arunas;
12:6:66 Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)
DOI:10.1088/0957-4484/23/30/305703 JN:NANOTECHNOLOGY PY:2012
TC:12 AU: Biermanns, A.;Breuer, S.;Trampert, A.;Davydok, A.;Geelhaar, L.;Pietsch, U.;
12:6:67 Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires
DOI:10.1063/1.4818338 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Venkatesan, Sriram;Madsen, Morten H.;Schmid, Herbert;Krogstrup, Peter;Johnson, Erik;Scheu, Christina;
12:6:68 Controlled wurtzite inclusions in self-catalyzed zinc blende III-V semiconductor nanowires
DOI:10.1016/j.jcrysgro.2012.12.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Rieger, Torsten;Lepsa, Mihail Ion;Schaepers, Thomas;Gruetzmacher, Detlev;
12:6:69 Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature
DOI:10.1016/j.jcrysgro.2014.07.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Matteini, Federico;Tuetuencueoglu, Goezde;Rueffer, Daniel;Alarcon-Llado, Esther;Fontcuberta i Morral, Anna;
12:6:70 Axial InAs/GaAs heterostructures on silicon in a nanowire geometry
DOI:10.1088/0957-4484/25/48/485602 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Somaschini, C.;Biermanns, A.;Bietti, S.;Bussone, G.;Trampert, A.;Sanguinetti, S.;Riechert, H.;Pietsch, U.;Geelhaar, L.;
12:6:71 Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
DOI:10.1063/1.4865921 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Tomioka, Katsuhiro;Fukui, Takashi;
12:6:72 Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires
DOI:10.1063/1.4896904 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Kauko, H.;Fimland, B. O.;Grieb, T.;Munshi, A. M.;Mueller, K.;Rosenauer, A.;van Helvoort, A. T. J.;
12:6:73 Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
DOI:10.1016/j.jcrysgro.2011.08.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Mandl, Bernhard;Dey, Anil W.;Stangl, Julian;Cantoro, Mirco;Wernersson, Lars-Erik;Bauer, Guenther;Samuelson, Lars;Deppert, Knut;Thelander, Claes;
12:6:74 Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
DOI:10.1016/j.jcrysgro.2013.03.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Nunez, C. Garcia;Brana, A. F.;Pau, J. L.;Ghita, D.;Garcia, B. J.;Shen, G.;Wilbert, D. S.;Kim, S. M.;Kung, P.;
12:6:75 Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices
DOI:10.1088/0957-4484/24/22/225304 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Das Kanungo, Pratyush;Schmid, Heinz;Bjork, Mikael T.;Gignac, Lynne M.;Breslin, Chris;Bruley, John;Bessire, Cedric D.;Riel, Heike;
12:6:76 Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires
DOI:10.1103/PhysRevB.82.075406 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Breuer, S.;Hilse, M.;Trampert, A.;Geelhaar, L.;Riechert, H.;
12:6:77 Transition from Au to pseudo-Ga catalyzed growth mode observed in GaAs nanowires grown by molecular beam epitaxy
DOI:10.1103/PhysRevB.85.245450 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Soda, M.;Rudolph, A.;Schuh, D.;Zweck, J.;Bougeard, D.;Reiger, E.;
12:6:78 Heterogeneous Integration of In GaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement
DOI:10.1021/nn304784y JN:ACS NANO PY:2012
TC:11 AU: Shin, Jae Cheol;Mohseni, Parsian K.;Yu, Ki Jun;Tomasulo, Stephanie;Montgomery, Kyle H.;Lee, Minjoo L.;Rogers, John A.;Li, Xiuling;
12:6:79 Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires
DOI:10.1063/1.4893021 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: O'Dowd, B. J.;Wojtowicz, T.;Rouvimov, S.;Liu, X.;Pimpinella, R.;Kolkovsky, V.;Wojciechowski, T.;Zgirski, M.;Dobrowolska, M.;Shvets, I. V.;Furdyna, J.;
12:6:80 Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
DOI:10.1016/j.jcrysgro.2012.11.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Le Thuy Thanh Giang;Bougerol, C.;Mariette, H.;Songmuang, R.;
12:6:81 Acoustically Driven Photon Antibunching in Nanowires
DOI:10.1021/nl203481m JN:NANO LETTERS PY:2012
TC:9 AU: Hernandez-Minguez, A.;Moeller, M.;Breuer, S.;Pfuller, C.;Somaschini, C.;Lazic, S.;Brandt, O.;Garcia-Cristobal, A.;de Lima, M. M., Jr.;Cantarero, A.;Geelhaar, L.;Riechert, H.;Santos, P. V.;
12:6:82 High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga
DOI:10.1021/nl504437v JN:NANO LETTERS PY:2015
TC:1 AU: Russo-Averchi, Eleonora;Plestina, Jelena Vukajlovic;Tuetuencueoglu, Goezde;Matteini, Federico;Dalmau-Mallorqui, Anna;de la Mata, Maria;Rueffer, Daniel;Potts, Heidi A.;Arbiol, Jordi;Conesa-Boj, Sonia;Fontcuberta i Morral, Anna;
12:6:83 Au-free InAs nanowires grown in In-particle-assisted vapor-liquid-solid mode: growth, structure, and electrical property
DOI:10.1063/1.4804542 JN:AIP ADVANCES PY:2013
TC:2 AU: Zhang, Guoqiang;Sasaki, Satoshi;Tateno, Kouta;Gotoh, Hideki;Sogawa, Tetsuomi;
12:6:84 Hexagonal and pentagonal shapes of self-catalyzed one-dimensional GaAs nanostructures: Shape dependence of the phase evolutions
DOI:10.1063/1.3698468 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Kim, Young Heon;Park, Dong Woo;Lee, Sang Jun;Kim, KwangMoo;Park, Yun Chang;
12:6:85 Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
DOI:10.1063/1.4862742 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Garcia Nunez, C.;Brana, A. F.;Pau, J. L.;Ghita, D.;Garcia, B. J.;Shen, G.;Wilbert, D. S.;Kim, S. M.;Kung, P.;
12:6:86 A new insight on crystalline strain and defect features by STEM-ADF imaging
DOI:10.1016/j.jcrysgro.2010.10.180 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Grillo, V.;Rossi, F.;
12:6:87 Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique
DOI:10.1021/nl402447h JN:NANO LETTERS PY:2013
TC:13 AU: Tomioka, Katsuhiro;Yoshimura, Masatoshi;Fukui, Takashi;
12:6:88 III-V Nanowire Synthesis by Use of Electrodeposited Gold Particles
DOI:10.1021/nl503203z JN:NANO LETTERS PY:2015
TC:2 AU: Jam, Reza Jafari;Heurlin, Magnus;Jain, Vishal;Kvennefors, Anders;Graczyk, Mariusz;Maximov, Ivan;Borgstrom, Magnus T.;Pettersson, Hakan;Samuelson, Lars;
12:6:89 InAs1-xPx nanowires grown by catalyst-free molecular-beam epitaxy
DOI:10.1088/0957-4484/24/8/085707 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Isakov, I.;Panfilova, M.;Sourribes, M. J. L.;Tileli, V.;Porter, A. E.;Warburton, P. A.;
12:6:90 Bringing Order to the World of Nanowire Devices by Phase Shift Lithography
DOI:10.1021/nl102103w JN:NANO LETTERS PY:2011
TC:8 AU: Subannajui, Kittitat;Gueder, Firat;Zacharias, Margit;
12:6:91 Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
DOI:10.1016/j.jcrysgro.2011.10.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Kohashi, Yoshinori;Sato, Takuya;Ikejiri, Keitaro;Tomioka, Katsuhiro;Hara, Shinjiroh;Motohisa, Junichi;
12:6:92 Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD
DOI:10.1016/j.jcrysgro.2014.03.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Wang, Xiaoye;Yang, Xiaoguang;Du, Wenna;Ji, Haiming;Luo, Shuai;Yang, Tao;
12:6:93 The phase equilibria in the Au-In-Ga ternary system
DOI:10.1016/j.jallcom.2013.11.088 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Ghasemi, Masoomeh;Lidin, Sven;Johansson, Jonas;
12:6:94 Au-catalyst-free epitaxy of InAs nanowires
DOI:10.1016/j.jcrysgro.2009.12.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Forbes, David;Hubbard, Seth;Raffaelle, Ryne;McNatt, Jeremiah S.;
12:6:95 Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE
DOI:10.1016/j.jcrysgro.2010.09.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Yoshimura, Masatoshi;Tomioka, Katsuhiro;Hiruma, Kenji;Hara, Shinjiro;Motohisa, Junichi;Fukui, Takashi;
12:6:96 Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique
DOI:10.1016/j.jcrysgro.2012.12.083 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Kwoen, Jinkwan;Watanabe, Katsuyuki;Iwamoto, Satoshi;Arakawa, Yasuhiko;
12:6:97 The thermodynamic assessment of the Au-In-Ga system
DOI:10.1016/j.jallcom.2014.02.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Ghasemi, M.;Sundman, B.;Fries, S. G.;Johansson, J.;
12:6:98 Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires (vol 105, 033111, 2014)
DOI:10.1063/1.4892964 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Rudolph, D.;Schweickert, L.;Morkoetter, S.;Loitsch, B.;Hertenberger, S.;Becker, J.;Bichler, M.;Abstreiter, G.;Finley, J. J.;Koblmueller, G.;
12:6:99 Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires (vol 116, 144303, 2014)
DOI:10.1063/1.4902325 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kauko, H.;Fimland, B. O.;Grieb, T.;Munshi, A. M.;Mueller, K.;Rosenauer, A.;van Helvoort, A. T. J.;
12:6:100 Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy
DOI:10.1016/j.jcrysgro.2010.12.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Ghita, D.;Plaza, J.;Sanchez, M.;Climent-Font, A.;Garcia, B. J.;
12:7:1 The influence of defects formed by Ca excess and thermal post-treatments on the persistent luminescence of CaTiO3:Pr
DOI:10.1364/OME.2.000405 JN:OPTICAL MATERIALS EXPRESS PY:2012
TC:10 AU: Otal, Eugenio H.;Maegli, Alexandra E.;Vogel-Schaeuble, Nina;Walfort, Bernhard;Hagemann, Hans;Yoon, Songhak;Zeller, Albert;Weidenkaff, Anke;
12:7:2 Comparative study of metallic and dielectric helix photonic metamaterial
DOI:10.1364/OME.4.002460 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:2 AU: Chadha, Arvinder Singh;Zhao, Deyin;Zhou, Weidong;
12:7:3 Surface plasmon enhanced photoluminescence in gold capped InGaAs quantum well nanodisk array
DOI:10.1364/OME.3.002003 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Huang, Jian;Tung, Kar Hoo Patrick;Deng, Liyuan;Xiang, Ning;Dong, Jianrong;Danner, Aaron J.;Teng, Jinghua;
12:7:4 Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
DOI:10.1063/1.3488825 JN:APPLIED PHYSICS LETTERS PY:2010
TC:78 AU: Zhang, Jing;Zhao, Hongping;Tansu, Nelson;
12:7:5 Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
DOI:10.1063/1.3583442 JN:APPLIED PHYSICS LETTERS PY:2011
TC:71 AU: Zhang, Jing;Zhao, Hongping;Tansu, Nelson;
12:7:6 Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
DOI:10.1063/1.3668117 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:94 AU: Zhang, Jing;Tansu, Nelson;
12:7:7 Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
DOI:10.1063/1.3580628 JN:APPLIED PHYSICS LETTERS PY:2011
TC:75 AU: Zhao, Hongping;Zhang, Jing;Liu, Guangyu;Tansu, Nelson;
12:7:8 Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
DOI:10.1063/1.3671668 JN:APPLIED PHYSICS LETTERS PY:2011
TC:44 AU: Taniyasu, Yoshitaka;Kasu, Makoto;
12:7:9 Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
DOI:10.1063/1.3579255 JN:APPLIED PHYSICS LETTERS PY:2011
TC:87 AU: Li, Yufeng;You, Shi;Zhu, Mingwei;Zhao, Liang;Hou, Wenting;Detchprohm, T.;Taniguchi, Y.;Tamura, N.;Tanaka, S.;Wetzel, C.;
12:7:10 Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
DOI:10.1063/1.3681944 JN:APPLIED PHYSICS LETTERS PY:2012
TC:23 AU: Pecora, Emanuele Francesco;Zhang, Wei;Nikiforov, A. Yu.;Zhou, Lin;Smith, David J.;Yin, Jian;Paiella, Roberto;Dal Negro, Luca;Moustakas, T. D.;
12:7:11 Synthesis of Monodisperse Au, Ag, and Au-Ag Alloy Nanoparticles with Tunable Size and Surface Plasmon Resonance Frequency
DOI:10.1021/cm201343k JN:CHEMISTRY OF MATERIALS PY:2011
TC:51 AU: Liu, Sha;Chen, Guanying;Prasad, Paras N.;Swihart, Mark T.;
12:7:12 Enhancement of Green Emission from InGaN/GaN Multiple Quantum Wells via Coupling to Surface Plasmons in a Two-Dimensional Silver Array
DOI:10.1002/adfm.201101814 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:51 AU: Lu, Cheng-Hsueh;Lan, Chia-Chun;Lai, Yen-Lin;Li, Yun-Li;Liu, Chuan-Pu;
12:7:13 Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
DOI:10.1063/1.3493188 JN:APPLIED PHYSICS LETTERS PY:2010
TC:91 AU: Zhao, Hongping;Liu, Guangyu;Tansu, Nelson;
12:7:14 Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2011.04.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:24 AU: Chung, Roy B.;Wu, Feng;Shivaraman, Ravi;Keller, Stacia;DenBaars, Steven P.;Speck, James S.;Nakamura, Shuji;
12:7:15 Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10(1)over-bar(1)over-bar) GaN substrate
DOI:10.1063/1.3589370 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Prosa, T. J.;Clifton, P. H.;Zhong, H.;Tyagi, A.;Shivaraman, R.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:7:16 Radially polarized optical vortex converter created by femtosecond laser nanostructuring of glass
DOI:10.1063/1.3590716 JN:APPLIED PHYSICS LETTERS PY:2011
TC:77 AU: Beresna, Martynas;Gecevicius, Mindaugas;Kazansky, Peter G.;Gertus, Titas;
12:7:17 Plan-view transmission electron microscopy study on coalescence overgrowth of GaN nanocolumns by MOCVD
DOI:10.1364/OME.3.001459 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Chen, Yung-Sheng;Liao, Che-Hao;Chueh, Yu-Lun;Kuo, Chie-Tong;Wang, Hsiang-Chen;
12:7:18 Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy
DOI:10.1364/OME.3.001450 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Chen, Yung-Sheng;Liao, Che-Hao;Cheng, Yung-Chen;Kuo, Chie-Tong;Wang, Hsiang-Chen;
12:7:19 Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
DOI:10.1016/j.jcrysgro.2009.10.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:85 AU: Ee, Yik-Khoon;Li, Xiao-Hang;Biser, Jeff;Cao, Wanjun;Chan, Helen M.;Vinci, Richard P.;Tansu, Nelson;
12:7:20 Multicolor bright Ln(3+) (Ln = Eu, Dy, Sm) activated tungstate phosphor for multifunctional applications
DOI:10.1364/OME.4.0142 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:6 AU: Wang, Qian;Ci, Zhipeng;Zhu, Ge;Xin, Shuangyu;Zeng, Wei;Que, Meidan;Wang, Yuhua;
12:7:21 Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation
DOI:10.1063/1.3446834 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Taniyasu, Yoshitaka;Kasu, Makoto;
12:7:22 Current-induced degradation of high performance deep ultraviolet light emitting diodes
DOI:10.1063/1.3435485 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Moe, Craig G.;Reed, Meredith L.;Garrett, Gregory A.;Sampath, Anand V.;Alexander, Troy;Shen, Hongen;Wraback, Michael;Bilenko, Yuriy;Shatalov, Maxim;Yang, Jinwei;Sun, Wenhong;Deng, Jianyu;Gaska, Remis;
12:7:23 A yellow emitting phosphor Dy:Bi4Si3O12 crystal for LED application
DOI:10.1016/j.matlet.2014.07.167 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Yang, Bobo;Xu, Jiayue;Zhang, Yan;Chu, Yaoqing;Wang, Meiling;Wen, Yuxian;
12:7:24 Origin of exciton emissions from an AlN p-n junction light-emitting diode
DOI:10.1063/1.3574025 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Taniyasu, Yoshitaka;Kasu, Makoto;
12:7:25 Effect of temperature on lateral growth of ZnO grains grown by MOCVD
DOI:10.1016/j.ceramint.2009.06.018 JN:CERAMICS INTERNATIONAL PY:2010
TC:23 AU: Chen, Y. J.;Shih, Y. Y.;Ho, C. H.;Du, J. H.;Fu, Y. P.;
12:7:26 Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers
DOI:10.1016/j.jcrysgro.2012.03.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Lin, Yu-Sheng;Lin, Kung-Hsuan;Tite, Teddy;Chuang, Cho-Ying;Chang, Yu-Ming;Yeh, J. Andrew;
12:7:27 Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface
DOI:10.1002/adma.201200871 JN:ADVANCED MATERIALS PY:2012
TC:8 AU: Akasaka, Tetsuya;Gotoh, Hideki;Kobayashi, Yasuyuki;Yamamoto, Hideki;
12:7:28 Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE
DOI:10.1155/2012/929278 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:5 AU: Ting, Shao-Ying;Chen, Po-Ju;Wang, Hsiang-Chen;Liao, Che-Hao;Chang, Wen-Ming;Hsieh, Ya-Ping;Yang, C. C.;
12:7:29 High performance Cu2O/ZnO core-shell nanorod arrays synthesized using a nanoimprint GaN template by the hydrothermal growth technique
DOI:10.1364/OME.4.001473 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Chen, Yung-Sheng;Liao, Che-Hao;Chueh, Yu-Lun;Lai, Chih-Chung;Chen, Li-Yin;Chu, Ann-Kuo;Kuo, Chie-Tong;Wang, Hsiang-Chen;
12:7:30 Porous MAl2O4:Eu2+ (Eu3+), Dy3+ (M = Sr, Ca, Ba) phosphors prepared by Pechini-type sol-gel method: The effect of solvents
DOI:10.1016/j.optmat.2011.07.020 JN:OPTICAL MATERIALS PY:2011
TC:7 AU: Chen, Xiang Ying;Li, Zhao;Bao, Shi Ping;Ji, Ping Ting;
12:7:31 Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field
DOI:10.1063/1.3428430 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Hall, C. R.;Dao, L. V.;Koike, K.;Sasa, S.;Tan, H. H.;Inoue, M.;Yano, M.;Jagadish, C.;Davis, J. A.;
12:7:32 Thermal and shock induced modification inside a silica glass by focused femtosecond laser pulse
DOI:10.1063/1.3533431 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Sakakura, Masaaki;Terazima, Masahide;Shimotsuma, Yasuhiko;Miura, Kiyotaka;Hirao, Kazuyuki;
12:7:33 Correlation between defect properties and internal quantum efficiency in blue-emitting InGaN based light emitting diodes
DOI:10.1063/1.4720447 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Lee, Sun-Kyun;Lim, Hyun Soo;Lee, Jang-Ho;Kwack, Ho-Sang;Cho, Hyun Kyong;Kwon, Ho-Ki;Oh, Myeong Seok;
12:7:34 Thermo-optic Coefficient of Polyisobutylene Ultrathin Films Measured with Integrated Photonic Devices
DOI:10.1021/la203547a JN:LANGMUIR PY:2012
TC:4 AU: Choi, Hong Seok;Neiroukh, Dania;Hunt, Heather K.;Armani, Andrea M.;
12:7:35 Broadband antireflective silicon carbide surface produced by cost-effective method
DOI:10.1364/OME.3.001119 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:3 AU: Argyraki, Aikaterini;Ou, Yiyu;Ou, Haiyan;
12:7:36 Tunable infrared plasmonic absorption by metallic nanoparticles
DOI:10.1063/1.3624596 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Das, Naresh C.;
12:7:37 Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy
DOI:10.1063/1.3502607 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Wang, X. Q.;Sun, H. P.;Pan, X. Q.;
12:7:38 Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency
DOI:10.1063/1.3651335 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Kamiya, Katsumasa;Ebihara, Yasuhiro;Shiraishi, Kenji;Kasu, Makoto;
12:7:39 Laser-induced structural changes in pure GeO2 glasses
DOI:10.1016/j.jnoncrysol.2011.03.014 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:8 AU: Bressel, Lena;de Ligny, Dominique;Sonneville, Camille;Martinez-Andrieux, Valerie;Juodkazis, Saulius;
12:7:40 Size and morphology control by planetary ball milling in CaAl2O4:Eu2+ phosphors prepared by Pechini method and their luminescence properties
DOI:10.1016/j.mseb.2010.03.071 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:9 AU: Choi, Sung-Woo;Hong, Seong-Hyeon;
12:7:41 Thermo-optic coefficient in some hybrid organic/inorganic fast sol-gel glasses
DOI:10.1016/j.optmat.2010.01.038 JN:OPTICAL MATERIALS PY:2010
TC:14 AU: Pokrass, M.;Burshtein, Z.;Gvishi, R.;
12:7:42 Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2010.08.006 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Kim, Jae Goo;Han, Seok Kyu;Yang, Sang Mo;Hong, Soon-Ku;Lee, Jae Wook;Lee, Jeong Yong;Song, Jung-Hoon;Ihm, Young Eon;Kim, Dojin;Park, Jin Sub;Lee, Hyo-Jong;Yao, Takafumi;
12:7:43 Drawn metamaterials with plasmonic response at terahertz frequencies
DOI:10.1063/1.3428576 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Tuniz, A.;Kuhlmey, B. T.;Lwin, R.;Wang, A.;Anthony, J.;Leonhardt, R.;Fleming, S. C.;
12:7:44 Electrochemically tunable ultrafast optical response of graphene oxide
DOI:10.1063/1.3573797 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Kurum, Ulas;Ekiz, Okan Oner;Yaglioglu, H. Gul;Elmali, Ayhan;Urel, Mustafa;Guner, Hasan;Mizrak, Alpay Koray;Ortac, Bulend;Dana, Aykutlu;
12:7:45 Strongly anisotropic behavior of A(1)(TO) phonon mode in bulk AlN
DOI:10.1016/j.jallcom.2013.09.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Zheng, Wei;Zheng, Rui Sheng;Wu, Hong Lei;Di Li, Fa;
12:7:46 Crystal-field analysis and Zeeman splittings of energy levels of Nd3+ (4f(3)) in GaN
DOI:10.1063/1.3625259 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Gruber, John B.;Burdick, Gary W.;Woodward, Nathaniel T.;Dierolf, Volkmar;Chandra, Sreerenjini;Sardar, Dhiraj K.;
12:7:47 High-pressure synthesis and in-situ high pressure x-ray diffraction study of cadmium tetraphosphide
DOI:10.1063/1.4790179 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Wang, Pei;Peng, Fang;Lei, Li;Chen, Haihua;Wang, Qiming;Xu, Chao;Liu, Ke;Ran, Xiangtian;Wang, Jianghua;Tang, Mingjun;Wang, Wendan;Liu, Jing;He, Duanwei;
12:7:48 High refractive index contrast in fused silica waveguides by tightly focused, high-repetition rate femtosecond laser
DOI:10.1016/j.jnoncrysol.2010.11.082 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:25 AU: Eaton, Shane M.;Ng, Mi Li;Osellame, Roberto;Herman, Peter R.;
12:7:49 Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser
DOI:10.1103/PhysRevB.84.245103 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Lancry, M.;Groothoff, N.;Poumellec, B.;Guizard, S.;Fedorov, N.;Canning, J.;
12:7:50 Magneto-optic Properties of Regioregular Polyalkylthiophenes
DOI:10.1021/cm102215a JN:CHEMISTRY OF MATERIALS PY:2011
TC:18 AU: Gangopadhyay, Palash;Koeckelberghs, Guy;Persoons, Andre;
12:7:51 Dislocation structure of GaN films grown on planar and nano-patterned sapphire
DOI:10.1063/1.3631823 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Cao, Wanjun;Biser, Jeffrey M.;Ee, Yik-Khoon;Li, Xiao-Hang;Tansu, Nelson;Chan, Helen M.;Vinci, Richard P.;
12:7:52 Formation of ferroelectric single-crystal architectures in LaBGeO5 glass by femtosecond vs. continuous-wave lasers
DOI:10.1016/j.jnoncrysol.2010.03.048 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:18 AU: Stone, A.;Sakakura, M.;Shimotsuma, Y.;Stone, G.;Gupta, P.;Miura, K.;Hirao, K.;Dierolf, V.;Jain, H.;
12:7:53 Asymmetry Peculiarities of Surface-Mediated Liquid Crystals Gratings Recorded Due to Light-Induced Anchoring
DOI:10.1080/15421406.2010.486622 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:5 AU: Ouskova, E.;Aryasova, N.;Boichuk, V.;Fedorenko, D.;Slyusarenko, K.;Reznikov, Yu;
12:7:54 From porous silica xerogels to bulk optical glasses: The control of densification
DOI:10.1016/j.matchemphys.2009.12.043 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:17 AU: El Hamzaoui, H.;Courtheoux, L.;Nguyen, V. N.;Berrier, E.;Favre, A.;Bigot, L.;Bouazaoui, M.;Capoen, B.;
12:7:55 Carrier dynamics in coalescence overgrowth of GaN nanocolumns
DOI:10.1016/j.tsf.2010.08.149 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Wang, Hsiang-Chen;Tang, Tsung-Yi;Yang, C. C.;Malinauskas, T.;Jarasiunas, K.;
12:7:56 Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD
DOI:10.1016/j.tsf.2009.10.124 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Kong, Bo Hyun;Kim, Dong Chan;Mohanta, Sanjay Kumar;Cho, Hyung Koun;
12:7:57 Plasmonic interferences in two-dimensional stacked double-disk array
DOI:10.1063/1.3583999 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Zhang, Zong-Suo;Yang, Zhong-Jian;Li, Jian-Bo;Hao, Zhong-Hua;Wang, Qu-Quan;
12:7:58 Infrared and X-ray photoelectron spectroscopy studies of hybrid organic/inorganic fast sol-gel glasses
DOI:10.1016/j.optmat.2011.04.036 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: Pokrass, Mariana;Gouzman, Irina;Bar, Galit;Gvishi, Raz;
12:7:59 Layer-multiple-scattering theory for metamaterials made from clusters of nanoparticles
DOI:10.1103/PhysRevB.84.085119 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Yannopapas, Vassilios;Vanakaras, Alexandros G.;
12:7:60 Broadband cloaking using composite dielectrics
DOI:10.1063/1.3562891 JN:AIP ADVANCES PY:2011
TC:2 AU: Hwang, Ruey-Bing;Chin, Cheng-Yuan;
12:7:61 Modeling of astigmatic-elliptical beam shaping during fs-laser waveguide writing including beam truncation and diffraction effects
DOI:10.1007/s00339-011-6316-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:2 AU: Ruiz De la Cruz, A.;Ferrer, A.;del Hoyo, J.;Siegel, J.;Solis, J.;
12:7:62 Enhanced broadband optical transmission in metallized woodpiles
DOI:10.1007/s00339-010-6213-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:2 AU: Malureanu, R.;Alabastri, A.;Cheng, W.;Kiyan, R.;Chichkov, B.;Andryieuski, A.;Lavrinenko, A.;
12:7:63 Selective excitation through tapered silica fibers of fluorescent two-photon polymerized structures
DOI:10.1007/s00339-010-6165-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Correa, Daniel S.;Tribuzi, Vinicius;Cardoso, Marcos R.;Misoguti, Lino;Mendonca, Cleber R.;
12:7:64 Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays
DOI:10.1007/s00339-013-8067-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Gao, Hongwei;Teng, Jinghua;Chua, Soo Jin;Xiang, Ning;
12:7:65 Coherent collisions of infrared self-trapped beams in photorefractive InP:Fe
DOI:10.1063/1.3373609 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Alonzo, Massimo;Dan, Cristian;Wolfersberger, Delphine;Fazio, Eugenio;
12:7:66 Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar, (10(11)(--)) GaN substrate (vol 98, 191903, 2011)
DOI:10.1063/1.3598937 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Prosa, T. J.;Clifton, P. H.;Zhong, H.;Tyagi, A.;Shivaraman, R.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:7:67 Optically transparent glass micro-actuator fabricated by femtosecond laser exposure and chemical etching
DOI:10.1063/1.4750236 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Lenssen, Bo;Bellouard, Yves;
12:7:68 Polarization insensitive in-fiber mode-locker based on carbon nanotube with N-methyl-2-pryrrolidone solvent filled fiber microchamber
DOI:10.1063/1.3691922 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Mou, Chengbo;Rozhin, Aleksey G.;Arif, Raz;Zhou, Kaiming;Turitsyn, Sergei;
12:7:69 Threading dislocation reduction in transit region of GaN terahertz Gunn diodes
DOI:10.1063/1.3685468 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Li, Liang;Yang, Lin-An;Zhang, Jin-Cheng;Xue, Jun-Shuai;Xu, Sheng-Rui;Lv, Ling;Hao, Yue;Niu, Mu-Tong;
12:7:70 Imprinting the nanostructures on the high refractive index semiconductor glass
DOI:10.1016/j.apsusc.2011.03.007 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Silvennoinen, M.;Paivasaari, K.;Kaakkunen, J. J. J.;Tikhomirov, V. K.;Lehmuskero, A.;Vahimaa, P.;Moshchalkov, V. V.;
12:7:71 Large negative refractive index modification induced by irradiation of femtosecond laser inside optical glasses
DOI:10.1016/j.apsusc.2010.11.133 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Hashimoto, Tomohiro;Tanaka, Shuhei;
12:7:72 Direct Laser Patterning of beta-BaB2O4 Crystals with High Orientation in the Inside of Glass Fiber
DOI:10.1111/jace.12275 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:4 AU: Suzuki, Futoshi;Honma, Tsuyoshi;Komatsu, Takayuki;
12:7:73 New model for assessing dose, dose rate, and temperature sensitivity of radiation-induced absorption in glasses
DOI:10.1063/1.3503370 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Gilard, Olivier;Caussanel, Matthieu;Duval, Herve;Quadri, Gianandrea;Reynaud, Francois;
12:7:74 Improvement of the quantum confined Stark effect characteristics by means of energy band profile modulation: The case of Gaussian quantum wells
DOI:10.1063/1.3662907 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Ramirez-Morales, A.;Martinez-Orozco, J. C.;Rodriguez-Vargas, I.;
12:7:75 Reshaped Terahertz waveforms from a large-aperture photoconductive antenna with millimeter scale metal hole and grid combination
DOI:10.1063/1.3562170 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Pai, Shyh-Shii;Chang, Shian-Wen;Wang, Tai-Shen;
12:7:76 Structure and physical properties of GexAsySe1-x-y glasses with the same mean coordination number of 2.5
DOI:10.1063/1.3544309 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Wang, R. P.;Bulla, D.;Smith, Anita;Wang, T.;Luther-Davies, Barry;
12:7:77 Substrate independence of THz vibrational modes of polycrystalline thin films of molecular solids in waveguide THz-TDS
DOI:10.1063/1.3678000 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Harsha, S. Sree;Melinger, Joseph. S.;Qadri, S. B.;Grischkowsky, D.;
12:7:78 Chirp structure measurement of a supercontinuum pulse based on transient lens effect in tellurite glass
DOI:10.1063/1.4795587 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zhang, Hang;Zhou, Zhiguang;Lin, Aoxiang;Cheng, Jun;Yan, Lihe;Si, Jinhai;Chen, Feng;Hou, Xun;
12:7:79 Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.08.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Ranta, Sanna;Hakkarainen, Teemu;Tavast, Miki;Lindfors, Jukka;Leinonen, Tomi;Guina, Mircea;
12:7:80 Effect of alkali metal oxides on the properties of radio-photoluminescence glasses
DOI:10.1016/j.jnoncrysol.2010.12.021 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:1 AU: Fan, Sijun;Yu, Chunlei;He, Dongbing;Li, Kefeng;Hu, Lili;
12:7:81 Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers
DOI:10.1116/1.3437017 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Zhang, Aidong;Lin, Aoxiang;Wang, Jau-Sheng;Toulouse, Jean;
12:7:82 Preparation and Characteristics of PMMA Microlens Array for a BLU Application by An Inkjet Printing Method
DOI:10.1080/15421400903584515 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:4 AU: Yang, Yong Suk;Youn, Doo-Hyeb;Kim, Seong Hyun;Lim, Sang Chul;Shim, Hyo Sun;Kang, Seong Youl;You, In-Kyu;
12:7:83 Temperature-dependent refractive index of potassium acid phthalate (KAP) in the visible and near-infrared
DOI:10.1016/j.optmat.2010.12.021 JN:OPTICAL MATERIALS PY:2011
TC:1 AU: Moutzouris, K.;Stavrakas, I.;Triantis, D.;Enculescu, M.;
12:7:84 Spectral and morphological changes of 3D polystyrene photonic crystals with the incorporation of alcohols
DOI:10.1016/j.optmat.2012.01.002 JN:OPTICAL MATERIALS PY:2012
TC:3 AU: Alee, K. Shadak;Sriram, G.;Rao, D. Narayana;
12:7:85 Bistability and improved hole injection in organic bistable light-emitting diodes using a quantum dot embedded hole transport layer
DOI:10.1016/j.synthmet.2010.03.011 JN:SYNTHETIC METALS PY:2010
TC:3 AU: Jeon, Soon Ok;Yook, Kyoung Soo;Lee, Jun Yeob;
12:7:86 Efficiency improvement of polymer light-emitting diodes using a quantum dot interlayer between a hole transport layer and an emitting layer
DOI:10.1016/j.synthmet.2009.09.028 JN:SYNTHETIC METALS PY:2010
TC:5 AU: Jeon, Soon Ok;Yook, Kyoung Soo;Lee, Jun Yeob;
12:7:87 High-index low-loss gallium phosphide thin films fabricated by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2011.02.068 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Gao, Jian;Zhan, Qiwen;Sarangan, Andrew M.;
12:7:88 Physical properties of an oxide photoresist film for submicron pattern lithography
DOI:10.1016/j.tsf.2013.05.134 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Chiang, Donyau;Chang, Chun-Ming;Chen, Shi-Wei;Yang, Chin-Tien;Hsueh, Wen-Jeng;
12:8:1 GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
DOI:10.1021/nl9041774 JN:NANO LETTERS PY:2010
TC:126 AU: Tomioka, Katsuhiro;Motohisa, Junichi;Hara, Shinjiroh;Hiruma, Kenji;Fukui, Takashi;
12:8:2 Impact of surfaces on the optical properties of GaAs nanowires
DOI:10.1063/1.3519980 JN:APPLIED PHYSICS LETTERS PY:2010
TC:79 AU: Demichel, O.;Heiss, M.;Bleuse, J.;Mariette, H.;Fontcuberta i Morral, A.;
12:8:3 Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires
DOI:10.1021/nl301391h JN:NANO LETTERS PY:2012
TC:47 AU: Chang, Chia-Chi;Chi, Chun-Yung;Yao, Maoqing;Huang, Ningfeng;Chen, Chun-Chung;Theiss, Jesse;Bushmaker, Adam W.;LaLumondiere, Stephen;Yeh, Ting-Wei;Povinelli, Michelle L.;Zhou, Chongwu;Dapkus, P. Daniel;Cronin, Stephen B.;
12:8:4 Direct Determination of Minority Carrier Diffusion Lengths at Axial GaAs Nanowire p-n Junctions
DOI:10.1021/nl204126n JN:NANO LETTERS PY:2012
TC:31 AU: Gutsche, Christoph;Niepelt, Raphael;Gnauck, Martin;Lysov, Andrey;Prost, Werner;Ronning, Carsten;Tegude, Franz-Josef;
12:8:5 Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning
DOI:10.1021/nl204552v JN:NANO LETTERS PY:2012
TC:46 AU: Wu, Phillip M.;Anttu, Nicklas;Xu, H. Q.;Samuelson, Lars;Pistol, Mats-Erik;
12:8:6 Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
DOI:10.1021/nl2004219 JN:NANO LETTERS PY:2011
TC:54 AU: Heurlin, Magnus;Wickert, Peter;Falt, Stefan;Borgstrom, Magnus T.;Deppert, Knut;Samuelson, Lars;Magnusson, Martin H.;
12:8:7 Patterned Radial GaAs Nanopillar Solar Cells
DOI:10.1021/nl200965j JN:NANO LETTERS PY:2011
TC:62 AU: Mariani, Giacomo;Wong, Ping-Show;Katzenmeyer, Aaron M.;Leonard, Francois;Shapiro, Joshua;Huffaker, Diana L.;
12:8:8 Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core-Shell Nanowires through Shell Growth Optimization
DOI:10.1021/nl4023385 JN:NANO LETTERS PY:2013
TC:18 AU: Jiang, N.;Gao, Q.;Parkinson, P.;Wong-Leung, J.;Mokkapati, S.;Breuer, S.;Tan, H. H.;Zheng, C. L.;Etheridge, J.;Jagadish, C.;
12:8:9 Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells
DOI:10.1063/1.3544486 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:32 AU: LaPierre, R. R.;
12:8:10 Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell
DOI:10.1063/1.3603029 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:26 AU: LaPierre, R. R.;
12:8:11 Toward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography and Selected Area Growth
DOI:10.1021/nl300341v JN:NANO LETTERS PY:2012
TC:38 AU: Madaria, Anuj R.;Yao, Maoqing;Chi, ChunYung;Huang, Ningfeng;Lin, Chenxi;Li, Ruijuan;Povinelli, Michelle L.;Dapkus, P. Daniel;Zhou, Chongwu;
12:8:12 Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires
DOI:10.1021/acs.nanolett.5b00188 JN:NANO LETTERS PY:2015
TC:0 AU: Zhang, Yunyan;Sanchez, Ana M.;Wu, Jiang;Aagesen, Martin;Holm, Jeppe V.;Beanland, Richard;Ward, Thomas;Liu, Huiyun;
12:8:13 Sulfur passivation and contact methods for GaAs nanowire solar cells
DOI:10.1088/0957-4484/22/22/225402 JN:NANOTECHNOLOGY PY:2011
TC:41 AU: Tajik, N.;Peng, Z.;Kuyanov, P.;LaPierre, R. R.;
12:8:14 Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core-Shell Nanowires
DOI:10.1021/nl3046816 JN:NANO LETTERS PY:2013
TC:31 AU: Rudolph, Daniel;Funk, Stefan;Doeblinger, Markus;Morkoetter, Stefanie;Hertenberger, Simon;Schweickert, Lucas;Becker, Jonathan;Matich, Sonja;Bichler, Max;Spirkoska, Dance;Zardo, Ilaria;Finley, Jonathan J.;Abstreiter, Gerhard;Koblmueller, Gregor;
12:8:15 Electron Mobilities Approaching Bulk Limits in "Surface-Free" GaAs Nanowires
DOI:10.1021/nl503043p JN:NANO LETTERS PY:2014
TC:4 AU: Joyce, Hannah J.;Parkinson, Patrick;Jiang, Nian;Docherty, Callum J.;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Herz, Laura M.;Johnston, Michael B.;
12:8:16 InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
DOI:10.1063/1.3526734 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Shapiro, J. N.;Lin, A.;Wong, P. S.;Scofield, A. C.;Tu, C.;Senanayake, P. N.;Mariani, G.;Liang, B. L.;Huffaker, D. L.;
12:8:17 GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate
DOI:10.1021/nl102988w JN:NANO LETTERS PY:2011
TC:35 AU: Chuang, Linus C.;Sedgwick, Forrest G.;Chen, Roger;Ko, Wai Son;Moewe, Michael;Ng, Kar Wei;Tran, Thai-Truong D.;Chang-Hasnain, Connie;
12:8:18 Unconventional Growth Mechanism for Monolithic Integration of 111-V on Silicon
DOI:10.1021/nn3028166 JN:ACS NANO PY:2013
TC:17 AU: Kar Wei Ng;Ko, Wai Son;Tran, Thai-Truong D.;Chen, Roger;Nazarenko, Maxim V.;Lu, Fanglu;Dubrovskii, Vladimir G.;Kamp, Martin;Forchel, Alfred;Chang-Hasnain, Connie J.;
12:8:19 Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
DOI:10.1063/1.4735002 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Jiang, N.;Parkinson, P.;Gao, Q.;Breuer, S.;Tan, H. H.;Wong-Leung, J.;Jagadish, C.;
12:8:20 Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires
DOI:10.1021/nl401680k JN:NANO LETTERS PY:2013
TC:23 AU: Zheng, Changlin;Wong-Leung, Jennifer;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;Etheridge, Joanne;
12:8:21 Theoretical analysis and modeling of light trapping in high efficicency GaAs nanowire array solar cells
DOI:10.1063/1.3647847 JN:APPLIED PHYSICS LETTERS PY:2011
TC:31 AU: Wen, Long;Zhao, Zhifei;Li, Xinhua;Shen, Yanfen;Guo, Haoming;Wang, Yuqi;
12:8:22 Strong Carrier Lifetime Enhancement in GaAs Nanowires Coated with Semiconducting Polymer
DOI:10.1021/nl3034027 JN:NANO LETTERS PY:2012
TC:24 AU: Yong, Chaw Keong;Noori, Keian;Gao, Qiang;Joyce, Hannah J.;Tan, H. Hoe;Jagadish, Chennupati;Giustino, Feliciano;Johnston, Michael B.;Herz, Laura M.;
12:8:23 GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions
DOI:10.1021/nl500704r JN:NANO LETTERS PY:2014
TC:17 AU: Yao, Maoqing;Huang, Ningfeng;Cong, Sen;Chi, Chun-Yung;Seyedi, M. Ashkan;Lin, Yen-Ting;Cao, Yu;Povinelli, Michelle L.;Dapkus, P. Daniel;Zhou, Chongwu;
12:8:24 Limiting efficiencies of tandem solar cells consisting of III-V nanowire arrays on silicon
DOI:10.1063/1.4754317 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Huang, Ningfeng;Lin, Chenxi;Povinelli, Michelle L.;
12:8:25 Elastic energy relaxation and critical thickness for plastic deformation in the core-shell InGaAs/GaAs nanopillars
DOI:10.1063/1.4795168 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Nazarenko, Maxim V.;Sibirev, Nickolay V.;Ng, Kar Wei;Ren, Fan;Ko, Wai Son;Dubrovskii, Vladimir G.;Chang-Hasnain, Connie;
12:8:26 Bottom-up Photonic Crystal Lasers
DOI:10.1021/nl2030163 JN:NANO LETTERS PY:2011
TC:37 AU: Scofield, Adam C.;Kim, Se-Heon;Shapiro, Joshua N.;Lin, Andrew;Liang, Baolai;Scherer, Axel;Huffaker, Diana L.;
12:8:27 Optical characteristics of GaAs nanowire solar cells
DOI:10.1063/1.4764927 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Hu, Y.;LaPierre, R. R.;Li, M.;Chen, K.;He, J. -J.;
12:8:28 Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires
DOI:10.1021/nl503385g JN:NANO LETTERS PY:2014
TC:0 AU: Hibi, Hideaki;Yamaguchi, Masahito;Yamamoto, Naold;Ishikawa, Fumitaro;
12:8:29 Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties
DOI:10.1088/0957-4484/25/30/305303 JN:NANOTECHNOLOGY PY:2014
TC:6 AU: Dhindsa, Navneet;Chia, Andrew;Boulanger, Jonathan;Khodadad, Iman;LaPierre, Ray;Saini, Simarjeet S.;
12:8:30 Understanding the True Shape of Au-Catalyzed GaAs Nanowires
DOI:10.1021/nl5027937 JN:NANO LETTERS PY:2014
TC:2 AU: Jiang, Nian;Wong-Leung, Jennifer;Joyce, Hannah J.;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:8:31 GaAs/AlGaAs Nanowire Photodetector
DOI:10.1021/nl5006004 JN:NANO LETTERS PY:2014
TC:16 AU: Dai, Xing;Zhang, Sen;Wang, Zilong;Adamo, Giorgio;Liu, Hai;Huang, Yizhong;Couteau, Christophe;Soci, Cesare;
12:8:32 Composite axial/core-shell nanopillar light-emitting diodes at 1.3 mu m
DOI:10.1063/1.4738997 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Scofield, A. C.;Lin, A.;Shapiro, J. N.;Senanayake, P. N.;Mariani, G.;Haddad, M.;Liang, B. L.;Huffaker, D. L.;
12:8:33 Three-Dimensional Core-Shell Hybrid Solar Cells via Controlled in Situ Materials Engineering
DOI:10.1021/nl301251q JN:NANO LETTERS PY:2012
TC:15 AU: Mariani, Giacomo;Wang, Yue;Wong, Ping-Show;Lech, Andrew;Hung, Chung-Hong;Shapiro, Joshua;Prikhodko, Sergey;El-Kady, Maher;Kaner, Richard B.;Hufraker, Diana L.;
12:8:34 High Quality GaAs Nanowires Grown on Glass Substrates
DOI:10.1021/nl204314z JN:NANO LETTERS PY:2012
TC:23 AU: Dhaka, Veer;Haggren, Tuomas;Jussila, Henri;Jiang, Hua;Kauppinen, Esko;Huhtio, Teppo;Sopanen, Markku;Lipsanen, Harri;
12:8:35 Three-Dimensional in Situ Photocurrent Mapping for Nanowire Photovoltaics
DOI:10.1021/nl304170q JN:NANO LETTERS PY:2013
TC:9 AU: Parkinson, Patrick;Lee, Yu-Heng;Fu, Lan;Breuer, Steffen;Tan, Hark Hoe;Jagadish, Chennupati;
12:8:36 Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell
DOI:10.1021/acs.nanolett.5b00756 JN:NANO LETTERS PY:2015
TC:0 AU: Ko, Wai Son;Tran, Thai-Truong D.;Bhattacharya, Indrasen;Ng, Kar Wei;Sun, Hao;Chang-Hasnain, Connie;
12:8:37 GaAs nanoneedles grown on sapphire
DOI:10.1063/1.3567492 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Chuang, Linus C.;Moewe, Michael;Kar Wei Ng;Thai-Truong D. Tran;Crankshaw, Shanna;Chen, Roger;Ko, Wai Son;Chang-Hasnain, Connie;
12:8:38 Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
DOI:10.1063/1.4803685 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Hocevar, Moira;Le Thuy Thanh Giang;Songmuang, Rudeesun;den Hertog, Martien;Besombes, Lucien;Bleuse, Joel;Niquet, Yann-Michel;Pelekanos, Nikos T.;
12:8:39 Composition Homogeneity in In GaAs/GaAs Core-Shell Nanopillars Monolithically Grown on Silicon
DOI:10.1021/am503676c JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Ng, Kar Wei;Ko, Wai Son;Chen, Roger;Lu, Fanglu;Tran, Thai-Truong D.;Li, Kun;Chang-Hasnain, Connie J.;
12:8:40 Analytical model of surface depletion in GaAs nanowires
DOI:10.1063/1.4752873 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Chia, Andrew C. E.;LaPierre, Ray R.;
12:8:41 Photoluminescence model of sulfur passivated p-InP nanowires
DOI:10.1088/0957-4484/23/31/315703 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Tajik, N.;Haapamaki, C. M.;LaPierre, R. R.;
12:8:42 Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate
DOI:10.1088/0957-4484/23/26/265402 JN:NANOTECHNOLOGY PY:2012
TC:13 AU: Tchernycheva, M.;Rigutti, L.;Jacopin, G.;Bugallo, A. de Luna;Lavenus, P.;Julien, F. H.;Timofeeva, M.;Bouravleuv, A. D.;Cirlin, G. E.;Dhaka, V.;Lipsanen, H.;Largeau, L.;
12:8:43 Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates
DOI:10.1088/0957-4484/24/6/065601 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Araki, Yoshiaki;Yamaguchi, Masahito;Ishikawa, Fumitaro;
12:8:44 Aluminum-Induced Photoluminescence Red Shifts in Core-Shell GaAs/AlxGa1-xAs Nanowires
DOI:10.1021/nl4012613 JN:NANO LETTERS PY:2013
TC:9 AU: Dhaka, Veer;Oksanen, Jani;Jiang, Hua;Haggren, Tuomas;Nykanen, Antti;Sanatinia, Reza;Kakko, Joona-Pekko;Huhtio, Teppo;Mattila, Marco;Ruokolainen, Janne;Anand, Srinivasan;Kauppinen, Esko;Lipsanen, Harri;
12:8:45 Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density
DOI:10.1021/nl502909k JN:NANO LETTERS PY:2015
TC:1 AU: Alekseev, Prokhor A.;Dunaevskiy, Mikhail S.;Ulin, Vladimir P.;Lvova, Tatiana V.;Filatov, Dmitriy O.;Nezhdanov, Alexey V.;Mashin, Aleksander I.;Berkovits, Vladimir L.;
12:8:46 n-GaAs/InGaP/p-GaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion
DOI:10.1002/adfm.201101759 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:17 AU: Gutsche, Christoph;Lysov, Andrey;Braam, Daniel;Regolin, Ingo;Keller, Gregor;Li, Zi-An;Geller, Martin;Spasova, Marina;Prost, Werner;Tegude, Franz-Josef;
12:8:47 Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes
DOI:10.1007/s11664-011-1824-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:2 AU: Gutsche, C.;Lysov, A.;Regolin, I.;Muenstermann, B.;Prost, W.;Tegude, F. J.;
12:8:48 Optical reflectivity from highly disordered Si nanowire films
DOI:10.1088/0957-4484/21/35/355701 JN:NANOTECHNOLOGY PY:2010
TC:18 AU: Convertino, Annalisa;Cuscuna, Massimo;Martelli, Faustino;
12:8:49 Single Nanowire Photoconductive Terahertz Detectors
DOI:10.1021/nl5033843 JN:NANO LETTERS PY:2015
TC:0 AU: Peng, Kun;Parkinson, Patrick;Fu, Lan;Gao, Qiang;Jiang, Nian;Guo, Ya-Nan;Wang, Fan;Joyce, Hannah J.;Boland, Jessica L.;Tan, Hark Hoe;Jagadish, Chennupati;Johnston, Michael B.;
12:8:50 Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition
DOI:10.1002/adfm.201303390 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:1 AU: Lin, Andrew;Shapiro, Joshua N.;Eisele, Holger;Huffaker, Diana L.;
12:8:51 High-quality InP nanoneedles grown on silicon
DOI:10.1063/1.4775377 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Ren, Fan;Ng, Kar Wei;Li, Kun;Sun, Hao;Chang-Hasnain, Connie J.;
12:8:52 On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays
DOI:10.1063/1.3555096 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Gu, Zongquan;Prete, Paola;Lovergine, Nicola;Nabet, Bahram;
12:8:53 Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires
DOI:10.1016/j.jcrysgro.2010.02.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:19 AU: Wagner, Jakob B.;Skold, Niklas;Wallenberg, L. Reine;Samuelson, Lars;
12:8:54 Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
DOI:10.1088/0957-4484/22/8/085702 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Lysov, A.;Offer, M.;Gutsche, C.;Regolin, I.;Topaloglu, S.;Geller, M.;Prost, W.;Tegude, F-J;
12:8:55 Bottom-up Photonic Crystal Cavities Formed by Patterned III-V Nanopillars
DOI:10.1021/nl200355d JN:NANO LETTERS PY:2011
TC:20 AU: Scofield, Adam C.;Shapiro, Joshua N.;Lin, Andrew;Williams, Alex D.;Wong, Ping-Show;Liang, Baolai L.;Huffaker, Diana L.;
12:8:56 Scattering matrix method for optical excitation of surface plasmons in metal films with periodic arrays of subwavelength holes
DOI:10.1103/PhysRevB.83.165431 JN:PHYSICAL REVIEW B PY:2011
TC:17 AU: Anttu, N.;Xu, H. Q.;
12:8:57 Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy
DOI:10.1063/1.4838556 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Kauko, H.;Zheng, C. L.;Zhu, Y.;Glanvill, S.;Dwyer, C.;Munshi, A. M.;Fimland, B. O.;van Helvoort, A. T. J.;Etheridge, J.;
12:8:58 Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires
DOI:10.1063/1.4905090 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, S. L.;Filippov, S.;Ishikawa, Fumitaro;Chen, W. M.;Buyanova, I. A.;
12:8:59 Electrical transport and optical model of GaAs-AlInP core-shell nanowires
DOI:10.1063/1.4716011 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Chia, A. C. E.;Tirado, M.;Li, Y.;Zhao, S.;Mi, Z.;Comedi, D.;LaPierre, R. R.;
12:8:60 Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction
DOI:10.1063/1.4883960 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Darbandi, A.;Salehzadeh, O.;Kuyanov, P.;LaPierre, R. R.;Watkins, S. P.;
12:8:61 Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon
DOI:10.1016/j.jcrysgro.2013.02.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Shin, Jae Cheol;Kim, Do Yang;Lee, Ari;Kim, Hyo Jin;Kim, Jae Hun;Choi, Won Jun;Kim, Hyun-Seok;Choi, Kyoung Jin;
12:8:62 Theoretical consideration of III-V nanowire/Si triple-junction solar cells
DOI:10.1088/0957-4484/23/50/505202 JN:NANOTECHNOLOGY PY:2012
TC:11 AU: Wen, Long;Li, Xinhua;Zhao, Zhifei;Bu, Shaojiang;Zeng, XueSong;Huang, Jin-hua;Wang, Yuqi;
12:8:63 Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
DOI:10.1021/nl303787a JN:NANO LETTERS PY:2012
TC:10 AU: Mokkapati, Sudha;Saxena, Dhruv;Jiang, Nian;Parkinson, Patrick;Wong-Leung, Jennifer;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:8:64 Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond the Substrate Grain Size Limit
DOI:10.1021/nl403555z JN:NANO LETTERS PY:2013
TC:9 AU: Ng, Kar Wei;Tran, Thai-Truong D.;Ko, Wai Son;Chen, Roger;Lu, Fanglu;Chang-Hasnain, Connie J.;
12:8:65 Direct-Bandgap Epitaxial Core-Multishell Nanopillar Photovoltaics Featuring Subwavelength Optical Concentrators
DOI:10.1021/nl400083g JN:NANO LETTERS PY:2013
TC:11 AU: Mariani, Giacomo;Zhou, Zhengliu;Scofield, Adam;Huffaker, Diana L.;
12:8:66 High Brightness InP Micropillars Grown on Silicon with Fermi Level Splitting Larger than 1 eV
DOI:10.1021/nl500621j JN:NANO LETTERS PY:2014
TC:3 AU: Tran, Thai-Truong D.;Sun, Hao;Ng, Kar Wei;Ren, Fan;Li, Kun;Lu, Fanglu;Yablonovitch, Eli;Chang-Hasnain, Constance J.;
12:8:67 Nanopillar Lasers Directly Grown on Silicon with Heterostructure Surface Passivation
DOI:10.1021/nn501481u JN:ACS NANO PY:2014
TC:2 AU: Sun, Hao;Ren, Fan;Kar Wei Ng;Tran, Thai-Truong D.;Li, Kun;Chang-Hasnain, Connie J.;
12:8:68 Nanoantennas for nanowire photovoltaics
DOI:10.1063/1.4896109 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Alisafaee, Hossein;Fiddy, Michael A.;
12:8:69 Recombination dynamics in single GaAs-nanowires with an axial heterojunction: n- versus p-doped areas
DOI:10.1063/1.4803488 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Sager, D.;Gutsche, C.;Prost, W.;Tegude, F. -J.;Bacher, G.;
12:8:70 Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor-liquid-solid grown GaAs nanowires
DOI:10.1016/j.jcrysgro.2010.08.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:18 AU: Regolin, I.;Gutsche, C.;Lysov, A.;Blekker, K.;Li, Zi-An;Spasova, M.;Prost, W.;Tegude, F. -J.;
12:8:71 Contact planarization of ensemble nanowires
DOI:10.1088/0957-4484/22/24/245304 JN:NANOTECHNOLOGY PY:2011
TC:20 AU: Chia, A. C. E.;LaPierre, R. R.;
12:8:72 Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy
DOI:10.1088/0957-4484/23/10/105701 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Lin, Andrew;Shapiro, Joshua N.;Senanayake, Pradeep N.;Scofield, Adam C.;Wong, Ping-Show;Liang, Baolai;Huffaker, Diana L.;
12:8:73 Polarity-driven Nonuniform Composition in InGaAs Nanowires
DOI:10.1021/nl402244p JN:NANO LETTERS PY:2013
TC:11 AU: Guo, Ya-Nan;Burgess, Timothy;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Zou, Jin;
12:8:74 Axial Diffusion Barriers in Near-Infrared Nanopillar LEDs
DOI:10.1021/nl501022v JN:NANO LETTERS PY:2014
TC:1 AU: Scofield, Adam C.;Lin, Andrew;Haddad, Michael;Huffaker, Diana L.;
12:8:75 Wafer-Scale Fabrication of Self-Catalyzed 1.7. eV GaAsP Core-Shell Nanowire Photocathode on Silicon Substrates
DOI:10.1021/nl500170m JN:NANO LETTERS PY:2014
TC:8 AU: Wu, Jiang;Li, Yanbo;Kubota, Jun;Domen, Kazunari;Aagesen, Martin;Ward, Thomas;Sanchez, Ana;Beanland, Richard;Zhang, Yunyan;Tang, Mingchu;Hatch, Sabina;Seeds, Alwyn;Liu, Huiyun;
12:8:76 Photoconductive gain in patterned nanopillar photodetector arrays
DOI:10.1063/1.3517491 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Senanayake, Pradeep;Lin, Andrew;Mariani, Giacomo;Shapiro, Joshua;Tu, Clayton;Scofield, Adam C.;Wong, Ping-Show;Liang, Baolai;Huffaker, Diana L.;
12:8:77 Kinetics of axial composition evolution in multi-component alloy nanowires
DOI:10.1063/1.4731628 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Ye, H.;Yu, Z. Y.;Kodambaka, S.;Shenoy, V. B.;
12:8:78 Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires
DOI:10.1063/1.4719675 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Tajik, N.;Chia, A. C. E.;LaPierre, R. R.;
12:8:79 Optical and electrical simulations of two-junction III-V nanowires on Si solar cell
DOI:10.1063/1.4788750 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Bu, Shaojiang;Li, Xinhua;Wen, Long;Zeng, Xuesong;Zhao, Yufeng;Wang, Wenbo;Wang, Yuqi;
12:8:80 Multi-spectral optical absorption in substrate-free nanowire arrays
DOI:10.1063/1.4896772 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Junpeng;Dhindsa, Navneet;Chia, Andrew;Boulanger, Jonathan;Khodadad, Iman;Saini, Simarjeet;LaPierre, Ray;
12:8:81 Optical absorption in InP/InGaAs/InP double-heterostructure nanopillar arrays for solar cells
DOI:10.1063/1.4865246 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Zhang, Xu;Sun, Xiao-Hong;Huang, Hui;Wang, Xishi;Huang, Yongqing;Ren, Xiaomin;
12:8:82 Optical reflectivity of GaAs nanowire arrays: Experiment and model
DOI:10.1063/1.4723567 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Convertino, Annalisa;Cuscuna, Massimo;Rubini, Silvia;Martelli, Faustino;
12:8:83 Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires
DOI:10.1021/nl102958g JN:NANO LETTERS PY:2010
TC:11 AU: Katzenmeyer, Aaron M.;Leonard, Francois;Talin, A. Alec;Wong, Ping-Show;Huffaker, Diana L.;
12:8:84 Influence of Metal Deposition on Exciton-Surface Plasmon Polariton Coupling in GaAs/AlAs/GaAs Core-Shell Nanowires Studied with Time-Resolved Cathodoluminescence
DOI:10.1021/nl400015a JN:NANO LETTERS PY:2013
TC:8 AU: Estrin, Yevgeni;Rich, Daniel H.;Kretinin, Andrey V.;Shtrikman, Hadas;
12:8:85 In Situ Characterization of Nanowire Dimensions and Growth Dynamics by Optical Reflectance
DOI:10.1021/acs.nanolett.5b01107 JN:NANO LETTERS PY:2015
TC:1 AU: Heurlin, Magnus;Anttu, Nicklas;Camus, Christian;Sarnuelson, Lars;Borgstrom, Magnus T.;
12:8:86 An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
DOI:10.1021/nl503593w JN:NANO LETTERS PY:2015
TC:2 AU: Mokkapati, Sudha;Saxena, Dhruv;Jiang, Nian;Li, Li;Tan, Hark Hoe;Jagadish, Chennupati;
12:8:87 Optical and electrical simulations of silicon nanowire array/Poly(3-hexylthiophene):Phenyl-C61-butyric acid methyl ester hybrid solar cell
DOI:10.1063/1.4903872 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Wenbo;Li, Xinhua;Wen, Long;Liu, Guangqiang;Shi, Tongfei;Duan, Huahua;Zhou, BuKang;Li, Ning;Zhao, Yufeng;Zeng, Xuesong;Wang, Yuqi;
12:8:88 Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon
DOI:10.1063/1.4895920 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tran, T. -T. D.;Chen, R.;Ng, K. W.;Ko, W. S.;Lu, F.;Chang-Hasnain, C. J.;
12:8:89 Gallium loading of gold seed for high yield of patterned GaAs nanowires
DOI:10.1063/1.4894288 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Boulanger, J. P.;Chia, A. C. E.;LaPierre, R. R.;
12:8:90 Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers
DOI:10.1063/1.4891535 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Haggren, Tuomas;Jiang, Hua;Kakko, Joona-Pekko;Huhtio, Teppo;Dhaka, Veer;Kauppinen, Esko;Lipsanen, Harri;
12:8:91 Optoelectronic response calculations in the framework of k.p coupled to non-equilibrium Green's functions for one-dimensional systems in the ballistic limit
DOI:10.1063/1.4815949 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Buin, Andrei;Verma, Amit;Saini, Simarjeet;
12:8:92 Silicon nanotubes from sacrificial silicon nanowires: fabrication and manipulation via embedding in flexible polymers
DOI:10.1088/0957-4484/23/30/305602 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Convertino, Annalisa;Cuscuna, Massimo;Martelli, Faustino;
12:8:93 Current matching and efficiency optimization in a two-junction nanowire-on-silicon solar cell
DOI:10.1088/0957-4484/24/6/065402 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Hu, Y.;Li, M.;He, J-J;LaPierre, R. R.;
12:8:94 Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples
DOI:10.1021/nl400811q JN:NANO LETTERS PY:2013
TC:1 AU: Anttu, Nicklas;Heurlin, Magnus;Borgstrom, Magnus T.;Pistol, Mats-Erik;Xu, H. Q.;Samuelson, Lars;
12:8:95 Design Considerations for Semiconductor Nanowire-Plasmonic Nanoparticle Coupled Systems for High Quantum Efficiency Nanowires
DOI:10.1002/smll.201300312 JN:SMALL PY:2013
TC:4 AU: Mokkapati, Sudha;Saxena, Dhruv;Tan, Hark Hoe;Jagadish, Chennupati;
12:8:96 Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates
DOI:10.1063/1.3575556 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Dubrovskii, Vladimir G.;Nazarenko, Maxim V.;Chuang, Linus C.;Ko, Wai Son;Ng, Kar Wei;Chang-Hasnain, Connie;
12:8:97 Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.07.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Wu, Jun;Borg, B. Mattias;Jacobsson, Daniel;Dick, Kimberly A.;Wernersson, Lars-Erik;
12:8:98 Direct-write non-linear photolithography for semiconductor nanowire characterization
DOI:10.1088/0957-4484/23/33/335704 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Parkinson, P.;Jiang, N.;Gao, Q.;Tan, H. H.;Jagadish, C.;
12:8:99 InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning
DOI:10.1021/nl403163x JN:NANO LETTERS PY:2013
TC:3 AU: Huang, Yinggang;Kim, Tae Wan;Long, Shisheng;Mawst, Luke J.;Kuech, Thomas F.;Nealey, Paul F.;Dai, Yushuai;Wang, Zihao;Guo, Wei;Forbes, David;Hubbard, Seth M.;Nesnidal, Michael;
12:8:100 Detailed Balance Analysis and Enhancement of Open-Circuit Voltage in Single-Nanowire Solar Cells
DOI:10.1021/nl404501w JN:NANO LETTERS PY:2014
TC:9 AU: Sandhu, Sunil;Yu, Zongfu;Fan, Shanhui;
12:8:101 Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar
DOI:10.1103/PhysRevB.84.085322 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Shapiro, J. N.;Lin, A.;Huffaker, D. L.;Ratsch, C.;
12:8:102 Ohmic contacts to n-GaAs nanowires
DOI:10.1063/1.3603041 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Gutsche, C.;Lysov, A.;Regolin, I.;Brodt, A.;Liborius, L.;Frohleiks, J.;Prost, W.;Tegude, F. -J.;
12:8:103 MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (111)Si substrates
DOI:10.1016/j.jcrysgro.2010.11.124 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Paek, Jihyun;Yamaguchi, Masahito;Amano, Hiroshi;
12:8:104 Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
DOI:10.1016/j.jcrysgro.2012.12.142 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Borg, B. Mattias;Johansson, Jonas;Storm, Kristian;Deppert, Knut;
12:8:105 GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
DOI:10.1088/0957-4484/24/11/115304 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Ikejiri, Keitaro;Ishizaka, Fumiya;Tomioka, Katsuhiro;Fukui, Takashi;
12:8:106 Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform
DOI:10.1038/NMAT3873 JN:NATURE MATERIALS PY:2014
TC:8 AU: Birowosuto, Muhammad Danang;Yokoo, Atsushi;Zhang, Guoqiang;Tateno, Kouta;Kuramochi, Eiichi;Taniyama, Hideaki;Takiguchi, Masato;Notomi, Masaya;
12:8:107 Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction
DOI:10.1063/1.4852136 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Seyedi, M. A.;Yao, M.;O'Brien, J.;Wang, S. Y.;Dapkus, P. D.;
12:8:108 Absorption enhancement using nanoneedle array for solar cell
DOI:10.1063/1.4832216 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Zhang, Xu;Sun, Xiao-Hong;Jiang, Liu-Di;
12:8:109 Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area
DOI:10.1063/1.4891764 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Seyedi, M. A.;Yao, M.;O'Brien, J.;Wang, S. Y.;Dapkus, P. D.;
12:8:110 Electrostatic model of radial pn junction nanowires
DOI:10.1063/1.4818958 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Chia, A. C. E.;LaPierre, R. R.;
12:8:111 The effect of plasmonic particles on solar absorption in vertically aligned silicon nanowire arrays
DOI:10.1063/1.3475484 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Lin, Chenxi;Povinelli, Michelle L.;
12:8:112 Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers
DOI:10.1063/1.4881266 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wei, Wei;Liu, Yange;Zhang, Xia;Wang, Zhi;Ren, Xiaomin;
12:8:113 Excitations of surface plasmon polaritons in double layer metal grating structures
DOI:10.1063/1.3690947 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Anttu, N.;Guan, Z. Q.;Hakanson, U.;Xu, H. X.;Xu, H. Q.;
12:8:114 Optical and electrical simulations of two-junction III-V nanowires on Si solar cell (vol 102, 031106, 2013)
DOI:10.1063/1.4861905 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bu, Shaojiang;Li, Xinhua;Wen, Long;Zeng, Xuesong;Zhao, Yufeng;Wang, Wenbo;Wang, Yuqi;
12:8:115 Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes
DOI:10.1063/1.3611387 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Tanriseven, Selim;Corbett, Brian;
12:8:116 Highly visible-light reflective SiOxNy nanowires for bright-white reflector applications
DOI:10.1016/j.tsf.2012.07.077 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Xi, Shuang;Shi, Tielin;Zhang, Lei;Liu, Dan;Lai, Wuxing;Tang, Zirong;
12:9:1 Metal-Assisted Chemical Etching of Silicon: A Review
DOI:10.1002/adma.201001784 JN:ADVANCED MATERIALS PY:2011
TC:402 AU: Huang, Zhipeng;Geyer, Nadine;Werner, Peter;de Boor, Johannes;Goesele, Ulrich;
12:9:2 Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays
DOI:10.1021/nl903841a JN:NANO LETTERS PY:2010
TC:83 AU: Chern, Winston;Hsu, Keng;Chun, Ik Su;de Azeredo, Bruno P.;Ahmed, Numair;Kim, Kyou-Hyun;Zuo, Jian-min;Fang, Nick;Ferreira, Placid;Li, Xiuling;
12:9:3 Wafer-Scale Synthesis of Single-Crystal Zigzag Silicon Nanowire Arrays with Controlled Turning Angles
DOI:10.1021/nl903391x JN:NANO LETTERS PY:2010
TC:64 AU: Chen, Huan;Wang, Hui;Zhang, Xiao-Hong;Lee, Chun-Sing;Lee, Shuit-Tong;
12:9:4 Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires
DOI:10.1021/am1009056 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:73 AU: Zhong, Xing;Qu, Yongquan;Lin, Yung-Chen;Liao, Lei;Duan, Xiangfeng;
12:9:5 Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering
DOI:10.1088/0957-4484/24/24/245704 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Kiraly, Brian;Yang, Shikuan;Huang, Tony Jun;
12:9:6 Au/Ag Bilayered Metal Mesh as a Si Etching Catalyst for Controlled Fabrication of Si Nanowires
DOI:10.1021/nn2003458 JN:ACS NANO PY:2011
TC:67 AU: Kim, Jungkil;Han, Hee;Kim, Young Heon;Choi, Suk-Ho;Kim, Jae-Cheon;Lee, Woo;
12:9:7 Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal-Assisted Chemical Etching
DOI:10.1002/adfm.201301094 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:12 AU: Yeom, Junghoon;Ratchford, Daniel;Field, Christopher R.;Brintlinger, Todd H.;Pehrsson, Pehr E.;
12:9:8 Guided Three-Dimensional Catalyst Folding during Metal-Assisted Chemical Etching of Silicon
DOI:10.1021/nl200715m JN:NANO LETTERS PY:2011
TC:32 AU: Rykaczewski, Konrad;Hildreth, Owen J.;Wong, Ching P.;Fedorov, Andrei G.;Scott, John Henry J.;
12:9:9 New Silicon Architectures by Gold-Assisted Chemical Etching
DOI:10.1021/am200948p JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:13 AU: Bechelany, Mikhael;Berodier, Elise;Maeder, Xavier;Schmitt, Sebastian;Michler, Johann;Philippe, Laetitia;
12:9:10 Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires
DOI:10.1088/0957-4484/23/30/305304 JN:NANOTECHNOLOGY PY:2012
TC:35 AU: Balasundaram, Karthik;Sadhu, Jyothi S.;Shin, Jae Cheol;Azeredo, Bruno;Chanda, Debashis;Malik, Mohammad;Hsu, Keng;Rogers, John A.;Ferreira, Placid;Sinha, Sanjiv;Li, Xiuling;
12:9:11 Fabrication of Silicon Nanowires with Precise Diameter Control Using Metal Nanodot Arrays as a Hard Mask Blocking Material in Chemical Etching
DOI:10.1021/cm101121c JN:CHEMISTRY OF MATERIALS PY:2010
TC:38 AU: Huang, Jinquan;Chiam, Sing Yang;Tan, Hui Huang;Wang, Shijie;Chim, Wai Kin;
12:9:12 Formation of High Aspect Ratio GaAs Nanostructures with Metal-Assisted Chemical Etching
DOI:10.1021/nl202708d JN:NANO LETTERS PY:2011
TC:29 AU: DeJarld, Matt;Shin, Jae Cheol;Chern, Winston;Chanda, Debashis;Balasundaram, Karthik;Rogers, John A.;Li, Xiuling;
12:9:13 Tunable Electrical Properties of Silicon Nanowires via Surface-Ambient Chemistry
DOI:10.1021/nn1001613 JN:ACS NANO PY:2010
TC:39 AU: Yuan, G. D.;Zhou, Y. B.;Guo, C. S.;Zhang, W. J.;Tang, Y. B.;Li, Y. Q.;Chen, Z. H.;He, Z. B.;Zhang, X. J.;Wang, P. F.;Bello, I.;Zhang, R. Q.;Lee, C. S.;Lee, S. T.;
12:9:14 Curved Silicon Nanowires with Ribbon-like Cross Sections by Metal-Assisted Chemical Etching
DOI:10.1021/nn2014358 JN:ACS NANO PY:2011
TC:37 AU: Kim, Jungkil;Kim, Young Heon;Choi, Suk-Ho;Lee, Woo;
12:9:15 Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation
DOI:10.1021/nl104362e JN:NANO LETTERS PY:2011
TC:31 AU: Weisse, Jeffrey M.;Kim, Dong Rip;Lee, Chi Hwan;Zheng, Xiaolin;
12:9:16 Fabrication of Flexible and Vertical Silicon Nanowire Electronics
DOI:10.1021/nl301659m JN:NANO LETTERS PY:2012
TC:30 AU: Weisse, Jeffrey M.;Lee, Chi Hwan;Kim, Dong Rip;Zheng, Xiaolin;
12:9:17 Biodegradable Porous Silicon Barcode Nanowires with Defined Geometry
DOI:10.1002/adfm.201000360 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:58 AU: Chiappini, Ciro;Liu, Xuewu;Fakhoury, Jean Raymond;Ferrari, Mauro;
12:9:18 Electroassisted Transfer of Vertical Silicon Wire Arrays Using a Sacrificial Porous Silicon Layer
DOI:10.1021/nl4021705 JN:NANO LETTERS PY:2013
TC:5 AU: Weisse, Jeffrey M.;Lee, Chi Hwan;Kim, Dong Rip;Cai, Lili;Rao, Pratap M.;Zheng, Xiaolin;
12:9:19 Switchable wettability of vertical Si nanowire array surface by simple contact-printing of siloxane oligomers and chemical washing
DOI:10.1039/c2jm30619k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Yoon, Sung-Soo;Khang, Dahl-Young;
12:9:20 GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching
DOI:10.1063/1.4817424 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Mohseni, Parsian K.;Kim, Seung Hyun;Zhao, Xiang;Balasundaram, Karthik;Kim, Jeong Dong;Pan, Lei;Rogers, John A.;Coleman, James J.;Li, Xiuling;
12:9:21 Optical properties of "black silicon" formed by catalytic etching of Au/Si(100) wafers
DOI:10.1063/1.4803152 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Matsui, Yusuke;Adachi, Sadao;
12:9:22 Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching
DOI:10.1088/0957-4484/21/9/095302 JN:NANOTECHNOLOGY PY:2010
TC:36 AU: de Boor, Johannes;Geyer, Nadine;Wittemann, Joerg V.;Goesele, Ulrich;Schmidt, Volker;
12:9:23 Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity
DOI:10.1063/1.4813867 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: McSweeney, W.;Lotty, O.;Mogili, N. V. V.;Glynn, C.;Geaney, H.;Tanner, D.;Holmes, J. D.;O'Dwyer, C.;
12:9:24 Controllable doping and wrap-around contacts to electrolessly etched silicon nanowire arrays
DOI:10.1088/0957-4484/25/37/375701 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Sadhu, Jyothi S.;Tian, Hongxiang;Spila, Timothy;Kim, Junhwan;Azeredo, Bruno;Ferreira, Placid;Sinha, Sanjiv;
12:9:25 Controllable light-induced conic structures in silicon nanowire arrays by metal-assisted chemical etching
DOI:10.1088/0957-4484/25/2/025602 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Zhang, Shenli;Wang, Xinwei;Liu, Hong;Shen, Wenzhong;
12:9:26 Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching
DOI:10.1021/nl202674t JN:NANO LETTERS PY:2011
TC:35 AU: To, Wai-Keung;Tsang, Chi-Him;Li, Hau-Hau;Huang, Zhifeng;
12:9:27 Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts
DOI:10.1021/am4046519 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Li, Liyi;Liu, Yan;Zhao, Xueying;Lin, Ziyin;Wong, Ching-Ping;
12:9:28 3D Out-of-Plane Rotational Etching with Pinned Catalysts in Metal-Assisted Chemical Etching of Silicon
DOI:10.1002/adfm.201100279 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:19 AU: Hildreth, Owen J.;Brown, Devin;Wong, Ching P.;
12:9:29 Vertical Arrays of SiO2 Micro/Nanotubes Templated from Si Pillars by Chemical Oxidation for High Loading Capacity Buoyant Aquatic Devices
DOI:10.1021/am4043504 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:1 AU: Yoon, Sung-Soo;Khang, Dahl-Young;
12:9:30 Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching
DOI:10.1063/1.4757009 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Dawood, M. K.;Tripathy, S.;Dolmanan, S. B.;Ng, T. H.;Tan, H.;Lam, J.;
12:9:31 Effect of Wettability on the Agglomeration of Silicon Nanowire Arrays Fabricated by Metal-Assisted Chemical Etching
DOI:10.1021/la501768f JN:LANGMUIR PY:2014
TC:3 AU: Togonal, A. S.;He, Lining;Roca i Cabarrocas, Pere;Rusli;
12:9:32 Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching
DOI:10.1088/0957-4484/24/22/225305 JN:NANOTECHNOLOGY PY:2013
TC:13 AU: Azeredo, B. P.;Sadhu, J.;Ma, J.;Jacobs, K.;Kim, J.;Lee, K.;Eraker, J. H.;Li, X.;Sinha, S.;Fang, N.;Ferreira, P.;Hsu, K.;
12:9:33 Mask less and Resist-Free Rapid Prototyping of Three-Dimensional Structures Through Electron Beam Induced Deposition (EBID) of Carbon in Combination with Metal-Assisted Chemical Etching (MaCE) of Silicon
DOI:10.1021/am1000773 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:13 AU: Rykaczewski, Konrad;Hildreth, Owen J.;Kulkarni, Dhaval;Henry, Matthew R.;Kim, Song-Kil;Wong, Ching Ping;Tsukruk, Vladimir V.;Fedorov, Andrei G.;
12:9:34 Lithographically patterned silicon nanostructures on silicon substrates
DOI:10.1016/j.apsusc.2012.02.085 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Megouda, Nacera;Piret, Gaelle;Galopin, Elisabeth;Coffinier, Yannick;Hadjersi, Toufik;Elkechai, Omar;Boukherroub, Rabah;
12:9:35 A continuous process for Si nanowires with prescribed lengths
DOI:10.1039/c1jm13831f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:10 AU: Kim, Jungkil;Rhu, Hyun;Lee, Woo;
12:9:36 Strategies for controlling Si nanowire formation during Au-assisted electroless etching
DOI:10.1039/c1jm11164g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:15 AU: Lee, Dae Ho;Kim, Yongkwan;Doerk, Gregory S.;Laboriante, Ian;Maboudian, Roya;
12:9:37 A New Route To Fabricate Large-Area, Compact Ag Metal Mesh Films with Ordered Pores
DOI:10.1021/la300788r JN:LANGMUIR PY:2012
TC:6 AU: Wu, Luo;He, Weiwei;Teng, Dayong;Ji, Shulin;Ye, Changhui;
12:9:38 Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted chemical etching
DOI:10.1016/j.matlet.2013.03.086 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Liu, Kong;Qu, Shengchun;Tan, Furui;Bi, Yu;Lu, Shudi;Wang, Zhanguo;
12:9:39 Efficient Si Nanowire Array Transfer via Bi-Layer Structure Formation Through Metal-Assisted Chemical Etching
DOI:10.1002/adfm.201303180 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:2 AU: Moon, Taeho;Chen, Lin;Choi, Shinhyun;Kim, Chunjoong;Lu, Wei;
12:9:40 Air-Bridged Ohmic Contact on Vertically Aligned Si Nanowire Arrays: Application to Molecule Sensors
DOI:10.1002/adma.201200347 JN:ADVANCED MATERIALS PY:2012
TC:10 AU: Han, Hee;Kim, Jungkil;Shin, Ho Sun;Song, Jae Yong;Lee, Woo;
12:9:41 Photonic crystal membrane reflectors by magnetic field-guided metal-assisted chemical etching
DOI:10.1063/1.4831657 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Balasundaram, Karthik;Mohseni, Parsian K.;Shuai, Yi-Chen;Zhao, Deyin;Zhou, Weidong;Li, Xiuling;
12:9:42 A systematic study on metal-assisted chemical etching of high aspect ratio silicon nanostructures
DOI:10.1016/j.jallcom.2014.07.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Ghafarinazari, Ali;Mozafari, Masoud;
12:9:43 Photocatalytic properties of porous silicon nanowires
DOI:10.1039/c0jm00493f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:40 AU: Qu, Yongquan;Zhong, Xing;Li, Yujing;Liao, Lei;Huang, Yu;Duan, Xiangfeng;
12:9:44 Matrix-Free Laser Desorption/Ionization Mass Spectrometry on Silicon Nanowire Arrays Prepared by Chemical Etching of Crystalline Silicon
DOI:10.1021/la902266x JN:LANGMUIR PY:2010
TC:49 AU: Piret, Gaelle;Drobecq, Herve;Coffinier, Yannick;Melnyk, Oleg;Boukherroub, Rabah;
12:9:45 Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires
DOI:10.1088/0957-4484/21/20/205305 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Dawood, M. K.;Liew, T. H.;Lianto, P.;Hong, M. H.;Tripathy, S.;Thong, J. T. L.;Choi, W. K.;
12:9:46 Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection
DOI:10.1088/0957-4484/22/35/355501 JN:NANOTECHNOLOGY PY:2011
TC:18 AU: In, Hyun Jin;Field, Christopher R.;Pehrsson, Pehr E.;
12:9:47 Vapor Phase Metal-Assisted Chemical Etching of Silicon
DOI:10.1002/adfm.201304129 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Hildreth, Owen J.;Schmidt, Daniel R.;
12:9:48 Air Heating Approach for Multi layer Etching and Roll-to-Roll Transfer of Silicon Nanowire Arrays as SERS Substrates for High Sensitivity Molecule Detection
DOI:10.1021/am4043883 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Wang, Yan;Zhang, Xiujuan;Gao, Peng;Shao, Zhibin;Zhang, Xiwei;Han, Yuanyan;Jie, Jiansheng;
12:9:49 Metal-assisted electroless etching of silicon in aqueous NH4HF2 solution
DOI:10.1016/j.apsusc.2012.02.043 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Brahiti, Naima;Bouanik, Sihem-Aissiou;Hadjersi, Toufik;
12:9:50 A versatile ultra-thin Au nanomesh from a reusable anodic aluminium oxide (AAO) membrane
DOI:10.1039/c3tc30970c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:5 AU: Park, Sang-Joon;Han, Hee;Rhu, Hyun;Baik, Sunggi;Lee, Woo;
12:9:51 Solvent-induced formation of unidirectionally curved and tilted Si nanowires during metal-assisted chemical etching
DOI:10.1039/c2tc00041e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Kim, Yongkwan;Tsao, Angela;Lee, Dae Ho;Maboudian, Roya;
12:9:52 Functional silicon nanostructures derived from drying-mediated self-assembly of gold nanoparticles
DOI:10.1007/s11051-014-2372-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:1 AU: Deshmukh, Ashvini B.;Devarapalli, Rami Reddy;Shelke, Manjusha V.;
12:9:53 Rice-straw-like structure of silicon nanowire arrays for a hydrogen gas sensor
DOI:10.1088/0957-4484/24/47/475502 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Huang, Bohr-Ran;Yang, Ying-Kan;Cheng, Hsien-Lung;
12:9:54 Metal-Catalyzed Electroless Etching of Silicon in Aerated HF/H2O Vapor for Facile Fabrication of Silicon Nanostructures
DOI:10.1021/nl500361u JN:NANO LETTERS PY:2014
TC:1 AU: Hu, Ya;Peng, Kui-Qing;Qiao, Zhen;Huang, Xing;Zhang, Fu-Qiang;Sun, Rui-Nan;Meng, Xiang-Min;Lee, Shuit-Tong;
12:9:55 Inverse Metal-Assisted Chemical Etching Produces Smooth High Aspect Ratio InP Nanostructures
DOI:10.1021/nl504136c JN:NANO LETTERS PY:2015
TC:1 AU: Kim, Seung Hyun;Mohseni, Parsian K.;Song, Yi;Ishihara, Tatsumi;Li, Xiuling;
12:9:56 Facile and Clean Release of Vertical Si Nanowires by Wet Chemical Etching Based on Alkali Hydroxides
DOI:10.1002/smll.201201804 JN:SMALL PY:2013
TC:6 AU: Yoon, Sung-Soo;Khang, Dahl-Young;
12:9:57 Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures
DOI:10.1016/j.tsf.2009.08.021 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Wolfsteller, A.;Geyer, N.;Nguyen-Duc, T. -K.;Das Anungo, P.;Zakharov, N. D.;Reiche, M.;Erfurth, W.;Blumtritt, H.;Werner, P.;Goesele, U.;
12:9:58 Electric-Driven Rotation of Silicon Nanowires and Silicon Nanowire Motors
DOI:10.1002/adfm.201303505 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Xu, Xiaobin;Liu, Chao;Kim, Kwanoh;Fan, D. L.;
12:9:59 Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
DOI:10.1002/adma.201300973 JN:ADVANCED MATERIALS PY:2013
TC:15 AU: Li, Xiaopeng;Xiao, Yanjun;Bang, Jin Ho;Lausch, Dominik;Meyer, Sylke;Miclea, Paul-Tiberiu;Jung, Jin-Young;Schweizer, Stefan L.;Lee, Jung-Ho;Wehrspohn, Ralf B.;
12:9:60 Temperature-dependent photoluminescence properties of porous silicon nanowire arrays
DOI:10.1063/1.3643047 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: He, Haiping;Liu, Chao;Sun, Luwei;Ye, Zhizhen;
12:9:61 Electroless chemical etching of silicon in aqueous NH4F/AgNO3/HNO3 solution
DOI:10.1016/j.apsusc.2013.08.033 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Megouda, Nacera;Hadjersi, Toufik;Szunerits, Sabine;Boukherroub, Rabah;
12:9:62 Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement
DOI:10.1063/1.4728189 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Seong, M.;Sadhu, J. S.;Ma, J.;Ghossoub, M. G.;Sinha, S.;
12:9:63 Porous silicon templates prepared by Cu-assisted chemical etching
DOI:10.1016/j.matlet.2013.12.093 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Zheng, Hui;Han, Mangui;Zheng, Peng;Zheng, Liang;Qin, Huibin;Deng, Longjiang;
12:9:64 Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique
DOI:10.1088/0957-4484/23/7/075204 JN:NANOTECHNOLOGY PY:2012
TC:20 AU: Irrera, A.;Artoni, P.;Iacona, F.;Pecora, E. F.;Franzo, G.;Galli, M.;Fazio, B.;Boninelli, S.;Priolo, F.;
12:9:65 Direct Gravure Printing of Silicon Nanowires Using Entropic Attraction Forces
DOI:10.1002/smll.201102367 JN:SMALL PY:2012
TC:9 AU: Seo, Jungmok;Lee, Hyonik;Lee, Seulah;Lee, Tae Il;Myoung, Jae-Min;Lee, Taeyoon;
12:9:66 3D Spirals with Controlled Chirality Fabricated Using Metal-Assisted Chemical Etching of Silicon
DOI:10.1021/nn303680k JN:ACS NANO PY:2012
TC:10 AU: Hildreth, Owen J.;Fedorov, Andrei G.;Wong, Ching Ping;
12:9:67 Electrochemically controlled fabrication of lightly doped porous Si nanowire arrays with excellent antireflective and self-cleaning properties
DOI:10.1016/j.actamat.2012.01.012 JN:ACTA MATERIALIA PY:2012
TC:9 AU: Wang, Ruey-Chi;Chao, Chien-Yang;Su, Wei-Sung;
12:9:68 Directed 2D-to-3D Pattern Transfer Method for Controlled Fabrication of Topologically Complex 3D Features in Silicon
DOI:10.1002/adma.201003833 JN:ADVANCED MATERIALS PY:2011
TC:8 AU: Rykaczewski, Konrad;Hildreth, Owen J.;Wong, Ching P.;Fedorov, Andrei G.;Scott, John Henry J.;
12:9:69 Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer
DOI:10.1063/1.4826930 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Li, Chuanbo;Fobelets, Kristel;Liu, Chang;Xue, Chunlai;Cheng, Buwen;Wang, Qiming;
12:9:70 A Route for Modulating the Diameter of Cylindrical Silicon Nanowires by Using Thermal Self-Ordering Silver Nanoparticles
DOI:10.1021/am403454j JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Lee, Sang Hoon;Lee, Tae Il;Moon, Kyeong-Ju;Myoung, Jae Min;
12:9:71 Surface Morphology-Dependent Photoelectrochemical Properties of One-Dimensional Si Nanostructure Arrays Prepared by Chemical Etching
DOI:10.1021/am400092w JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Wu, Shao-long;Wen, Long;Cheng, Guo-an;Zheng, Rui-ting;Wu, Xiao-ling;
12:9:72 Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)
DOI:10.1021/am504046b JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Li, Liyi;Zhao, Xueying;Wong, Ching-Ping;
12:9:73 Synthesize of barium ferrite nanowire array by self-fabricated porous silicon template
DOI:10.1016/j.apsusc.2014.05.134 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Zheng, Hui;Han, Mangui;Deng, Jiangxia;Zheng, Liang;Wu, Jun;Deng, Longjiang;Qin, Huibin;
12:9:74 In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs
DOI:10.1039/c4ta02189d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Song, Yunwon;Ki, Bugeun;Choi, Keorock;Oh, Ilwhan;Oh, Jungwoo;
12:9:75 Metal-assisted electrochemical etching of silicon
DOI:10.1088/0957-4484/21/46/465301 JN:NANOTECHNOLOGY PY:2010
TC:22 AU: Huang, Z. P.;Geyer, N.;Liu, L. F.;Li, M. Y.;Zhong, P.;
12:9:76 Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask
DOI:10.1088/0957-4484/23/30/305305 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Shin, Jae Cheol;Zhang, Chen;Li, Xiuling;
12:9:77 Large scale low cost fabrication of diameter controllable silicon nanowire arrays
DOI:10.1088/0957-4484/25/25/255302 JN:NANOTECHNOLOGY PY:2014
TC:5 AU: Sun, Leimeng;Fan, Yu;Wang, Xinghui;Susantyoko, Rahmat Agung;Zhang, Qing;
12:9:78 Magnetically Guided Nano-Micro Shaping and Slicing of Silicon
DOI:10.1021/nl300141k JN:NANO LETTERS PY:2012
TC:7 AU: Oh, Young;Choi, Chulmin;Hong, Daehoon;Kong, Seong Deok;Jin, Sungho;
12:9:79 Formation of a-Si:H and a-Si1-xCx:H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO3 solution
DOI:10.1016/j.tsf.2011.02.047 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Douani, Rachida;Piret, Gaelle;Hadjersi, Toufik;Chazalviel, Jean-Noel;Solomon, Ionel;
12:9:80 Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substrates
DOI:10.1016/j.tsf.2011.10.172 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Cheng, S. L.;Lo, C. H.;Chuang, C. F.;Lee, S. W.;
12:9:81 Metal-Catalyzed Etching of Vertically Aligned Polysilicon and Amorphous Silicon Nanowire Arrays by Etching Direction Confinement
DOI:10.1002/adfm.201000437 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:31 AU: Chang, Shih-wei;Chuang, Vivian P.;Boles, Steven T.;Thompson, Carl V.;
12:9:82 Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
DOI:10.1063/1.4866578 JN:AIP ADVANCES PY:2014
TC:2 AU: Qi, Yangyang;Wang, Zhen;Zhang, Mingliang;Wang, Xiaodong;Ji, An;Yang, Fuhua;
12:9:83 Fabrication of Silicon Nanowire Arrays by Macroscopic Galvanic Cell-Driven Metal Catalyzed Electroless Etching in Aerated HF Solution
DOI:10.1002/adma.201304327 JN:ADVANCED MATERIALS PY:2014
TC:5 AU: Liu, Lin;Peng, Kui-Qing;Hu, Ya;Wu, Xiao-Ling;Lee, Shuit-Tong;
12:9:84 Fabrication of silicon nanopillar-based nanocapacitor arrays
DOI:10.1063/1.3374889 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Chang, Shih-wei;Oh, Jihun;Boles, Steven T.;Thompson, Carl V.;
12:9:85 Facile morphological control of single-crystalline silicon nanowires
DOI:10.1016/j.apsusc.2012.06.031 JN:APPLIED SURFACE SCIENCE PY:2012
TC:14 AU: Wu, Shao-long;Zhang, Ting;Zheng, Rui-ting;Cheng, Guo-an;
12:9:86 Lightly doped single crystalline porous Si nanowires with improved optical and electrical properties
DOI:10.1039/c0jm02476g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:21 AU: Chen, Huihui;Zou, Rujia;Chen, Haihua;Wang, Na;Sun, Yangang;Tian, Qiwei;Wu, Jianghong;Chen, Zhigang;Hu, Junqing;
12:9:87 Participation of focused ion beam implanted gallium ions in metal-assisted chemical etching of silicon
DOI:10.1116/1.4732124 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:4 AU: Hildreth, Owen;Rykaczewski, Konrad;Wong, Ching Ping;
12:9:88 Fabrication of arbitrarily shaped silicon and silicon oxide nanostructures using tip-based nanofabrication
DOI:10.1116/1.4831767 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:5 AU: Hu, Huan;Mohseni, Parsian K.;Pan, Lei;Li, Xiuling;Somnath, Suhas;Felts, Jonathan R.;Shannon, Mark A.;King, William P.;
12:9:89 Hydrophobically Recovered and Contact Printed Siloxane Oligomers for General-Purpose Surface Patterning
DOI:10.1021/la1018746 JN:LANGMUIR PY:2010
TC:12 AU: Kim, Ju-Han;Hwang, Hyun-Sik;Hahm, Si-Woo;Khang, Dahl-Young;
12:9:90 Preparation of two-dimensional yttrium iron garnet magnonic crystal on porous silicon substrate
DOI:10.1016/j.matlet.2014.03.006 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Zheng, H.;Zhou, J. J.;Deng, J. X.;Zheng, P.;Zheng, L.;Han, M. G.;Yang, Y. Q.;Deng, L. J.;Qin, H. B.;
12:9:91 Bulk Micromachining of Si by Metal-assisted Chemical Etching
DOI:10.1002/smll.201303379 JN:SMALL PY:2014
TC:4 AU: Kim, Sang-Mi;Khang, Dahl-Young;
12:9:92 Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O3 film
DOI:10.1007/s00339-013-7670-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Yue, Zhihao;Shen, Honglie;Jiang, Ye;Wang, Wei;Jin, Jiale;
12:9:93 Precision stress localization during mechanical harvesting of vertically oriented semiconductor micro- and nanostructure arrays
DOI:10.1063/1.4884200 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ombaba, M. M.;Jayaraman, L. V.;Islam, M. S.;
12:9:94 Synthesis of porous silicon nano-wires and the emission of red luminescence
DOI:10.1016/j.apsusc.2013.05.114 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Sun Congli;Hu Hao;Feng Huanhuan;Xu Jingjing;Chen Yu;Jin Yong;Jiao Zhifeng;Sun Xiaosong;
12:9:95 Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires
DOI:10.1063/1.3446845 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Mohammad, S. Noor;
12:9:96 Formation of Luminescent Silicon Nanowires and Porous Silicon by Metal-Assisted Electroless Etching
DOI:10.1007/s11664-014-3051-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Karbassian, F.;Mousavi, B. Kheyraddini;Rajabali, S.;Talei, R.;Mohajerzadeh, S.;Asl-Soleimani, E.;
12:9:97 Tuning the photoluminescence of porous silicon nanowires by morphology control
DOI:10.1039/c3tc32354d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Gan, Lu;Sun, Luwei;He, Haiping;Ye, Zhizhen;
12:9:98 Silicon nanowires fabricated by porous gold thin film assisted chemical etching and their photoelectrochemical properties
DOI:10.1016/j.matlet.2014.03.145 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Liu, Lifeng;Bao, Xiao-Qing;
12:9:99 Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
DOI:10.1088/0957-4484/21/43/435202 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Moselund, K. E.;Ghoneim, H.;Schmid, H.;Bjoerk, M. T.;Loertscher, E.;Karg, S.;Signorello, G.;Webb, D.;Tschudy, M.;Beyeler, R.;Riel, H.;
12:9:100 The same etchant produces both near-atomically flat and microfaceted Si(100) surfaces: The effects of gas evolution on etch morphology
DOI:10.1063/1.3402580 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Aldinger, Brandon S.;Gupta, Ankush;Clark, Ian T.;Hines, Melissa A.;
12:9:101 Vertically aligned crystalline silicon nanowires with controlled diameters for energy conversion applications: Experimental and theoretical insights
DOI:10.1063/1.4876477 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Razek, Sara Abdel;Swillam, Mohamed A.;Allam, Nageh K.;
12:9:102 Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst
DOI:10.1039/c4ta05095a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:1 AU: Song, Yunwon;Oh, Jungwoo;
12:9:103 Metal-assisted etching of silicon molds for electroforming
DOI:10.1116/1.4821651 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Divan, Ralu;Rosenthal, Dan;Ogando, Karim;Ocola, Leonidas E.;Rosenmann, Daniel;Moldovan, Nicolaie;
12:9:104 Vertical directionality-controlled metal-assisted chemical etching for ultrahigh aspect ratio nanoscale structures
DOI:10.1116/1.4898199 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Tiberio, Richard C.;Rooks, Michael J.;Chang, Chieh;Knollenberg, Clifford F.;Dobisz, Elizabeth A.;Sakdinawat, Anne;
12:9:105 Luminescent ordered arrays of nanoporous silicon nanopillars and silicon nanopillars with nanoporous shells
DOI:10.1016/j.matlet.2013.02.044 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Wang, Dong;Schoenherr, Sven;Du, Song;Ronning, Carsten;Schaaf, Peter;
12:9:106 Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays
DOI:10.1016/j.tsf.2009.09.037 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Dalchiele, E. A.;Martin, F.;Leinen, D.;Marotti, R. E.;Ramos-Barrado, J. R.;
12:9:107 Formation of Through-Holes in Si Wafers by Using Anodically Polarized Needle Electrodes in HF Solution
DOI:10.1021/am2003284 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:1 AU: Sugita, Tomohiko;Lee, Chia-Lung;Ikeda, Shigeru;Matsumura, Michio;
12:9:108 Ag-Mediated Charge Transport during Metal-Assisted Chemical Etching of Silicon Nanowires
DOI:10.1021/am400510f JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Geyer, Nadine;Fuhrmann, Bodo;Leipner, Hartmut S.;Werner, Peter;
12:9:109 Pore Formation in a p-Type Silicon Wafer Using a Platinum Needle Electrode with Application of Square-Wave Potential Pulses in HF Solution
DOI:10.1021/am302314y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:0 AU: Sugita, Tomohiko;Hiramatsu, Kazuki;Ikeda, Shigeru;Matsumura, Michio;
12:9:110 Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates
DOI:10.1021/am5028605 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Katiyar, Ajit K.;Sinha, Arun Kumar;Manna, Santanu;Ray, Samit K.;
12:9:111 Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes
DOI:10.1039/c3tc31306a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Qi, Dongfeng;Liu, Hanhui;Gao, Wei;Sun, Qinqin;Chen, Songyan;Huang, Wei;Li, Cheng;Lai, Hongkai;
12:9:112 Solid-liquid-vapor metal-catalyzed etching of lateral and vertical nanopores
DOI:10.1088/0957-4484/24/41/415303 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Wallentin, Jesper;Deppert, Knut;Borgstrom, Magnus T.;
12:9:113 Strain-induced generation of silicon nanopillars
DOI:10.1088/0957-4484/24/33/335302 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Bollani, Monica;Osmond, Johann;Nicotra, Giuseppe;Spinella, Corrado;Narducci, Dario;
12:9:114 Growth of Straight Silicon Nanowires on Amorphous Substrates with Uniform Diameter, Length, Orientation, and Location Using Nanopatterned Host-Mediated Catalyst
DOI:10.1021/nl2026663 JN:NANO LETTERS PY:2011
TC:6 AU: Wang, Chao;Murphy, Patrick F.;Yao, Nan;McIlwrath, Kevin;Chou, Stephen Y.;
12:9:115 The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
DOI:10.1063/1.3504654 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:0 AU: Chung, Tung-Hsun;Liao, Wen-Hsuan;Lin, Shih-Yen;
12:9:116 Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy
DOI:10.1063/1.4732073 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Arapkina, L. V.;Krylova, L. A.;Chizh, K. V.;Chapnin, V. A.;Uvarov, O. V.;Yuryev, V. A.;
12:9:117 Intra-particle coupling and plasmon tuning of multilayer Au/dielectric/Au nanocrescents adhered to a dielectric cylinder
DOI:10.1088/0957-4484/23/5/055201 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Wu, Kai-Yu;Cheng, Xiu-Lan;Lee, Luke P.;
12:9:118 Raman scattering studies of heavily doped microcrystalline porous silicon and porous silicon free-standing membranes
DOI:10.1103/PhysRevB.82.075210 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Abidi, Dorra;Jusserand, Bernard;Fave, Jean-Louis;
12:9:119 Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer
DOI:10.1063/1.4746762 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Morel, P. H.;Haberfehlner, G.;Lafond, D.;Audoit, G.;Jousseaume, V.;Leroux, C.;Fayolle-Lecocq, M.;Baron, T.;Ernst, T.;
12:9:120 Manganese dioxide modified silicon nanowires and their excellent catalysis in the decomposition of methylene blue
DOI:10.1063/1.3682486 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Gao, Weiwei;Shao, Mingwang;Yang, Li;Zhuo, Shujuan;Ye, Shiyong;Lee, Shuit-tong;
12:9:121 Controlling growth density and patterning of single crystalline silicon nanowires
DOI:10.1016/j.apsusc.2010.05.051 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Chang, Tung-Hao;Chang, Yu-Cheng;Liu, Fu-Ken;Chu, Tieh-Chi;
12:9:122 Effects of off-stoichiometry and density on the magnetic and magneto-optical properties of yttrium iron garnet films by magnetron sputtering method
DOI:10.1063/1.3489947 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Yang, Qing-Hui;Zhang, Huai-Wu;Wen, Qi-Ye;Liu, Ying-Li;
12:9:123 Printable electronics-compatible silicon nanoparticles prepared by the facile decomposition of SiS2 and their application in a back-to-back Schottky diode
DOI:10.1039/c2jm35349k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: More, Priyesh V.;Jeong, Sunho;Lee, Ji-Yoon;Seo, Yeong-Hui;Ryu, Beyong-Hwan;Choi, Youngmin;
12:9:124 Regulation of the morphology and photoluminescence of silicon nanowires by light irradiation
DOI:10.1039/c4tc01431f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Liu, Lin;
12:9:125 Mechanical properties of vertically aligned single-crystalline silicon nanowire arrays
DOI:10.1557/jmr.2011.49 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:0 AU: Cuevas, Ana;Ariel Dalchiele, Enrique;Marotti, Ricardo;Leinen, Dietmar;Ramon Ramos-Barrado, Jose;Martin, Francisco;
12:9:126 Bending and branching of anodic aluminum oxide nanochannels and their applications
DOI:10.1116/1.4711246 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Kasi, Ajab Khan;Kasi, Jafar Khan;Afzulpurkar, Nitin;Hasan, Md Mahadi;Mahaisavariya, Banchong;
12:9:127 Self-catalytic growth of silicon nanowires on stainless steel
DOI:10.1016/j.matlet.2010.06.024 JN:MATERIALS LETTERS PY:2010
TC:2 AU: Kim, Myoung-Ha;Park, Yong-Hee;Kim, Ilsoo;Park, Tae-Eon;Sung, Yun-Mo;Choi, Heon-Jin;
12:9:128 Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
DOI:10.1088/0957-4484/21/29/295304 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Lin, Shih-Yen;Tseng, Chi-Che;Chung, Tung-Hsun;Liao, Wen-Hsuan;Chen, Shu-Han;Chyi, Jen-Inn;
12:9:129 Hexagonal geometric patterns formed by radial pore growth of InP based on Voronoi tessellation
DOI:10.1088/0957-4484/23/21/215304 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Asoh, Hidetaka;Iwata, Jun;Ono, Sachiko;
12:9:130 +0.4% Efficiency gain by novel texture for String Ribbon solar cells
DOI:10.1016/j.solmat.2012.01.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:2 AU: Cichoszewski, J.;Reuter, M.;Werner, J. H.;
12:10:1 Prospects and challenges of organic/group IV nanomaterial solar cells
DOI:10.1039/c2jm14943e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:19 AU: Song, Tao;Lee, Shuit-Tong;Sun, Baoquan;
12:10:2 Hybrid Silicon Nanocone-Polymer Solar Cells
DOI:10.1021/nl300713x JN:NANO LETTERS PY:2012
TC:168 AU: Jeong, Sangmoo;Garnett, Erik C.;Wang, Shuang;Yu, Zongu;Fan, Shanhui;Brongersma, Mark L.;McGehee, Michael D.;Cui, Yi;
12:10:3 Hybrid Heterojunction Solar Cell Based on Organic-Inorganic Silicon Nanowire Array Architecture
DOI:10.1021/ja205703c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:96 AU: Shen, Xiaojuan;Sun, Baoquan;Liu, Dong;Lee, Shuit-Tong;
12:10:4 Air Stable, Efficient Hybrid Photovoltaic Devices Based on Poly(3-hexylthiophene) and Silicon Nanostructures
DOI:10.1021/cm103221a JN:CHEMISTRY OF MATERIALS PY:2011
TC:87 AU: Zhang, Fute;Sun, Baoquan;Song, Tao;Zhu, Xiulin;Lee, Shuittong;
12:10:5 Morphology Dependence of Silicon Nanowire/Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Heterojunction Solar Cells
DOI:10.1021/cm100086x JN:CHEMISTRY OF MATERIALS PY:2010
TC:105 AU: Shiu, Shu-Chia;Chao, Jiun-Jie;Hung, Shih-Che;Yeh, Chin-Liang;Lin, Ching-Fuh;
12:10:6 Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells
DOI:10.1002/adma.201102712 JN:ADVANCED MATERIALS PY:2011
TC:69 AU: Avasthi, Sushobhan;Lee, Stephanie;Loo, Yueh-Lin;Sturm, James C.;
12:10:7 High efficiency planar Si/organic heterojunction hybrid solar cells
DOI:10.1063/1.3684872 JN:APPLIED PHYSICS LETTERS PY:2012
TC:45 AU: He, Lining;Jiang, Changyun;Wang, Hao;Lai, Donny;Rusli;
12:10:8 High-Performance Photoelectrochemical Cells from Ionic Liquid Electrolyte in Methyl-Terminated Silicon Nanowire Arrays
DOI:10.1021/nn101980x JN:ACS NANO PY:2010
TC:49 AU: Shen, Xiaojuan;Sun, Baoquan;Yan, Feng;Zhao, Jie;Zhang, Fute;Wang, Suidong;Zhu, Xiulin;Lee, Shuittong;
12:10:9 Conjugated polymer-silicon nanowire array hybrid Schottky diode for solar cell application
DOI:10.1088/0957-4484/23/19/194006 JN:NANOTECHNOLOGY PY:2012
TC:29 AU: Zhang, Fute;Song, Tao;Sun, Baoquan;
12:10:10 13% Efficiency Hybrid Organic/Silicon-Nanowire Heterojunction Solar Cell via Interface Engineering
DOI:10.1021/nn403982b JN:ACS NANO PY:2013
TC:35 AU: Yu, Peichen;Tsai, Chia-Ying;Chang, Jan-Kai;Lai, Chih-Chung;Chen, Po-Han;Lai, Yi-Chun;Tsai, Pei-Ting;Li, Ming-Chin;Pan, Huai-Te;Huang, Yang-Yue;Wu, Chih-I;Chueh, Yu-Lun;Chen, Shih-Wei;Du, Chen-Hsun;Horng, Sheng-Fu;Meng, Hsin-Fei;
12:10:11 Highly efficient Si-nanorods/organic hybrid core-sheath heterojunction solar cells
DOI:10.1063/1.3610461 JN:APPLIED PHYSICS LETTERS PY:2011
TC:41 AU: He, Lining;Jiang, Changyun;Rusli;Lai, Donny;Wang, Hao;
12:10:12 Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells
DOI:10.1063/1.4709615 JN:APPLIED PHYSICS LETTERS PY:2012
TC:37 AU: Liu, Qiming;Ono, Masahiro;Tang, Zeguo;Ishikawa, Ryo;Ueno, Keiji;Shirai, Hajime;
12:10:13 Flexible Silver Nanowire Meshes for High-Efficiency Microtextured Organic-Silicon Hybrid Photovoltaics
DOI:10.1021/am302011u JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:23 AU: Chen, Ting-Gang;Huang, Bo-Yu;Liu, Hsiao-Wei;Huang, Yang-Yue;Pan, Huai-Te;Meng, Hsin-Fei;Yu, Peichen;
12:10:14 Heterojunction with Organic Thin Layers on Silicon for Record Efficiency Hybrid Solar Cells
DOI:10.1002/aenm.201300923 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:15 AU: Zhang, Yunfang;Zu, Fengshuo;Lee, Shuit-Tong;Liao, Liangsheng;Zhao, Ni;Sun, Baoquan;
12:10:15 Micro-textured conductive polymer/silicon heterojunction photovoltaic devices with high efficiency
DOI:10.1063/1.4734240 JN:APPLIED PHYSICS LETTERS PY:2012
TC:34 AU: Chen, Ting-Gang;Huang, Bo-Yu;Chen, En-Chen;Yu, Peichen;Meng, Hsin-Fei;
12:10:16 High Efficiency Hybrid Silicon Nanopillar-Polymer Solar Cells
DOI:10.1021/am402598j JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:25 AU: Pudasaini, Pushpa Raj;Ruiz-Zepeda, Francisco;Sharma, Manisha;Elam, David;Ponce, Arturo;Ayon, Arturo A.;
12:10:17 Effects of nanowire texturing on the performance of Si/organic hybrid solar cells fabricated with a 2.2 mu m thin-film Si absorber
DOI:10.1063/1.3692590 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: He, Lining;Jiang, Changyun;Wang, Hao;Lai, Donny;Tan, Yew Heng;Tan, Chuan Seng;Rusli;
12:10:18 Methyl/Allyl Monolayer on Silicon: Efficient Surface Passivation for Silicon-Conjugated Polymer Hybrid Solar Cell
DOI:10.1021/am302893r JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:28 AU: Zhang, Fute;Liu, Dong;Zhang, Yunfang;Wei, Huaixin;Song, Tao;Sun, Baoquan;
12:10:19 Si Nanowires Organic Semiconductor Hybrid Heterojunction Solar Cells Toward 10% Efficiency
DOI:10.1021/am201838y JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:37 AU: He, Lining;Jiang, Changyun;Wang, Hao;Lai, Donny;Rusli;
12:10:20 Heterojunction with organic thin layer for three dimensional high performance hybrid solar cells
DOI:10.1039/c2jm15674a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:24 AU: Zhang, Fute;Han, Xiaoyuan;Lee, Shuit-tong;Sun, Baoquan;
12:10:21 Silicon nanowire/organic hybrid solar cell with efficiency of 8.40%
DOI:10.1016/j.solmat.2011.11.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:59 AU: Syu, Hong-Jhang;Shiu, Shu-Chia;Lin, Ching-Fuh;
12:10:22 Self-assembled silver nanowires as top electrode for poly(3,4-ethylenedioxythiophene): poly(stylenesulfonate)/n-silicon solar cell
DOI:10.1016/j.tsf.2014.02.073 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Khatri, Ishwor;Hoshino, Ayo;Watanabe, Fumiya;Liu, Qiming;Ishikawa, Ryo;Ueno, Keiji;Shirai, Hajime;
12:10:23 13.8% Efficiency Hybrid Si/Organic Heterojunction Solar Cells with MoO3 Film as Antireflection and Inversion Induced Layer
DOI:10.1002/adma.201402076 JN:ADVANCED MATERIALS PY:2014
TC:9 AU: Liu, Ruiyuan;Lee, Shuit-Tong;Sun, Baoquan;
12:10:24 High-performance hybrid organic-inorganic solar cell based on planar n-type silicon
DOI:10.1063/1.4875913 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Chi, Dan;Qi, Boyuan;Wang, Jizheng;Qu, Shengchun;Wang, Zhanguo;
12:10:25 Hole Selective MoOx Contact for Silicon Solar Cells
DOI:10.1021/nl404389u JN:NANO LETTERS PY:2014
TC:26 AU: Battaglia, Corsin;Yin, Xingtian;Zheng, Maxwell;Sharp, Ian D.;Chen, Teresa;McDonnell, Stephen;Azcatl, Angelica;Carraro, Carlo;Ma, Biwu;Maboudian, Roya;Wallace, Robert M.;Javey, Ali;
12:10:26 High-Efficiency Si/Polymer Hybrid Solar Cells Based on Synergistic Surface Texturing of Si Nanowires on Pyramids
DOI:10.1002/smll.201102095 JN:SMALL PY:2012
TC:37 AU: He, Lining;Lai, Donny;Wang, Hao;Jiang, Changyun;Rusli;
12:10:27 A 12%-Efficient Upgraded Metallurgical Grade Silicon-Organic Heterojunction Solar Cell Achieved by a Self-Purifying Process
DOI:10.1021/nn504279d JN:ACS NANO PY:2014
TC:4 AU: Zhang, Jie;Song, Tao;Shen, Xinlei;Yu, Xuegong;Lee, Shuit-Tong;Sun, Baoquan;
12:10:28 Green-tea modified multiwalled carbon nanotubes for efficient poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon hybrid solar cell
DOI:10.1063/1.4792691 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Khatri, Ishwor;Tang, Zeguo;Liu, Qiming;Ishikawa, Ryo;Ueno, Keiji;Shirai, Hajime;
12:10:29 The role of a LiF layer on the performance of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Si organic-inorganic hybrid solar cells
DOI:10.1063/1.4866968 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Yunfang;Liu, Ruiyuan;Lee, Shuit-Tong;Sun, Baoquan;
12:10:30 Silicon nanowire - poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) heterojunction solar cells
DOI:10.1063/1.3636385 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Ozdemir, Baris;Kulakci, Mustafa;Turan, Rasit;Unalan, Husnu Emrah;
12:10:31 Efficiency Enhancement of PEDOT:PSS/Si Hybrid Solar Cells by Using Nanostructured Radial Junction and Antireflective Surface
DOI:10.1021/am4018412 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Chen, Jheng-Yuan;Con, Celal;Yu, Ming-Hung;Cui, Bo;Sun, Kien Wen;
12:10:32 Efficient organic-inorganic hybrid Schottky solar cell: The role of built-in potential
DOI:10.1063/1.4796112 JN:APPLIED PHYSICS LETTERS PY:2013
TC:16 AU: Zhu, Yawen;Song, Tao;Zhang, Fute;Lee, Shuit-Tong;Sun, Baoquan;
12:10:33 Electrical characterization of inorganic-organic hybrid photovoltaic devices based on silicon-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
DOI:10.1063/1.4773368 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Zhang, Jie;Zhang, Yunfang;Zhang, Fute;Sun, Baoquan;
12:10:34 High-efficiency hybrid solar cells by nanostructural modification in PEDOT:PSS with co-solvent addition
DOI:10.1039/c3ta14590e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:15 AU: Thomas, Joseph Palathinkal;Zhao, Liyan;McGillivray, Donald;Leung, Kam Tong;
12:10:35 Hole electrical transporting properties in organic-Si Schottky solar cell
DOI:10.1063/1.4812988 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Shen, Xiaojuan;Zhu, Yawen;Song, Tao;Lee, Shuit-Tong;Sun, Baoquan;
12:10:36 Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions
DOI:10.1063/1.3480599 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Price, Michelle J.;Foley, Justin M.;May, Robert A.;Maldonado, Stephen;
12:10:37 Structure dependence in hybrid Si nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) solar cells: Understanding photovoltaic conversion in nanowire radial junctions
DOI:10.1063/1.3676041 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Lu, Wenhui;Chen, Qi;Wang, Bing;Chen, Liwei;
12:10:38 Highly efficient poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Si hybrid solar cells with imprinted nanopyramid structures
DOI:10.1063/1.4822116 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Chen, Jheng-Yuan;Yu, Ming-Hung;Chang, Shun-Fa;Sun, Kien Wen;
12:10:39 Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells
DOI:10.1021/am503949g JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Sheng, Jiang;Fan, Ke;Wang, Dan;Han, Can;Fang, Junfeng;Gao, Pingqi;Ye, Jichun;
12:10:40 Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability
DOI:10.1063/1.4827303 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Schmidt, Jan;Titova, Valeriya;Zielke, Dimitri;
12:10:41 Synthesis and properties of a photovoltaic cell based on polystyrene-functionalised Si nanowires filled into a poly(N-vinylcarbazole) matrix
DOI:10.1016/j.matchemphys.2012.07.004 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Ben Dkhil, Sadok;Bourguiga, Ramzi;Beyou, Emmanuel;Davenas, Joel;Cornu, David;
12:10:42 n-Si-Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p-n Homojunction in n-Si
DOI:10.1002/aenm.201301724 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:5 AU: Erickson, Ann S.;Zohar, Arava;Cahen, David;
12:10:43 Defect-Minimized PEDOT:PSS/Planar-Si Solar Cell with Very High Efficiency
DOI:10.1002/adfm.201400380 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:14 AU: Thomas, Joseph Palathinkal;Leung, Kam Tong;
12:10:44 Enhanced Light Absorption of Silicon Nanotube Arrays for Organic/Inorganic Hybrid Solar Cells
DOI:10.1002/adma.201305394 JN:ADVANCED MATERIALS PY:2014
TC:10 AU: Jeong, Huisu;Song, Hui;Pak, Yusin;Kwon, Il Keun;Jo, Kyubong;Lee, Heon;Jung, Gun Young;
12:10:45 Effect of solvent on carrier transport in poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) studied by terahertz and infrared-ultraviolet spectroscopy
DOI:10.1063/1.3647574 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Yamashita, Masatsugu;Otani, Chiko;Shimizu, Masahiro;Okuzaki, Hidenori;
12:10:46 Improved photovoltaic performance of crystalline-Si/organic Schottky junction solar cells using ferroelectric polymers
DOI:10.1063/1.4826323 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Liu, Q.;Khatri, I.;Ishikawa, R.;Fujimori, A.;Ueno, K.;Manabe, K.;Nishino, H.;Shirai, H.;
12:10:47 Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications
DOI:10.1063/1.4863830 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Tsao, Hou-Yen;Lin, Yow-Jon;
12:10:48 Morphological Change and Mobility Enhancement in PEDOT:PSS by Adding Co-solvents
DOI:10.1002/adma.201205158 JN:ADVANCED MATERIALS PY:2013
TC:42 AU: Wei, Qingshuo;Mukaida, Masakazu;Naitoh, Yasuhisa;Ishida, Takao;
12:10:49 Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %
DOI:10.1007/s00339-014-8405-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:9 AU: Pietsch, Matthias;Jaeckle, Sara;Christiansen, Silke;
12:10:50 Synthesis of (4-Hexyloxybenzoyl)butylsaure Methyl Amide/Poly(3-hexylthiophene) Heterojunction Nanowire Arrays
DOI:10.1021/am301174a JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:4 AU: Chen, Nan;Liu, Chao;Zhang, Jianhong;Liu, Huibiao;
12:10:51 Extraction of poly (3-hexylthiophene) (P3HT) properties from dark current voltage characteristics in a P3HT/n-crystalline-silicon solar cell
DOI:10.1063/1.3296294 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:25 AU: Nolasco, J. C.;Cabre, R.;Ferre-Borrull, J.;Marsal, L. F.;Estrada, M.;Pallares, J.;
12:10:52 A stamped PEDOT:PSS-silicon nanowire hybrid solar cell
DOI:10.1088/0957-4484/23/14/145401 JN:NANOTECHNOLOGY PY:2012
TC:21 AU: Moiz, Syed Abdul;Nahhas, Ahmed Muhammad;Um, Han-Don;Jee, Sang-Won;Cho, Hyung Koun;Kim, Sang-Woo;Lee, Jung-Ho;
12:10:53 Improved photovoltaic performance of hybrid solar cells based on silicon nanowire and P3HT
DOI:10.1016/j.synthmet.2014.03.016 JN:SYNTHETIC METALS PY:2014
TC:4 AU: Ben Dkhil, Sadok;Ebdelli, Rihab;Dachraoui, Walid;Faltakh, Hana;Bourguiga, Rarnzi;Davenas, Joel;
12:10:54 Optical anisotropy in solvent-modified poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid) and its effect on the photovoltaic performance of crystalline silicon/organic heterojunction solar cells
DOI:10.1063/1.4811355 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Liu, Qiming;Imamura, Takashi;Hiate, Taiga;Khatri, Ishwor;Tang, Zeguo;Ishikawa, Ryo;Ueno, Keiji;Shirai, Hajime;
12:10:55 Organic-inorganic hybrid thin film solar cells using conducting polymer and gold nanoparticles
DOI:10.1063/1.4804377 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Jung, Hyung Hwan;Kim, Dong Ho;Kim, Chang Su;Bae, Tae-Sung;Chung, Kwun Bum;Ryu, Seung Yoon;
12:10:56 Carrier Dynamics in Si Nanowires Fabricated by Metal-Assisted Chemical Etching
DOI:10.1021/nn301891s JN:ACS NANO PY:2012
TC:10 AU: Tang, Hao;Zhu, Li-Guo;Zhao, Liang;Zhang, Xuejin;Shan, Jie;Lee, Shuit-Tong;
12:10:57 Effects of molybdenum oxide molecular doping on the chemical structure of poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) and on carrier collection efficiency of silicon/poly(3,4-ethylenedioxythiophene): poly(stylenesulfonate) heterojunction solar cells
DOI:10.1063/1.4804298 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Liu, Q.;Khatri, I.;Ishikawa, R.;Ueno, K.;Shirai, H.;
12:10:58 Plasmonic enhancement in hybrid organic/Si heterojunction solar cells enabled by embedded gold nanoparticles
DOI:10.1063/1.4904955 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xia, Zhouhui;Song, Tao;Sun, Jun;Lee, Shuit-Tong;Sun, Baoquan;
12:10:59 High efficiency silicon nanohole/organic heterojunction hybrid solar cell
DOI:10.1063/1.4863965 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hong, Lei;Wang, Xincai;Zheng, Hongyu;He, Lining;Wang, Hao;Yu, Hongyu;Rusli;
12:10:60 Influence of pre-surface treatment on the morphology of silicon nanowires fabricated by metal-assisted etching
DOI:10.1016/j.apsusc.2010.08.086 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Shiu, Shu-Chia;Lin, Shin-Bo;Hung, Shih-Che;Lin, Ching-Fuh;
12:10:61 Increasing the efficiency of polymer solar cells by silicon nanowires
DOI:10.1088/0957-4484/22/31/315401 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Eisenhawer, B.;Sensfuss, S.;Sivakov, V.;Pietsch, M.;Andrae, G.;Falk, F.;
12:10:62 Design guideline of Si nanohole/PEDOT:PSS hybrid structure for solar cell application
DOI:10.1088/0957-4484/24/35/355301 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;Wang, Hao;Yu, Hongyu;
12:10:63 The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process
DOI:10.1063/1.4770074 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Jeong, Shin Woo;Lee, Gi Back;Ha, Hyeon-Jun;Kwon, Soon-Ki;Kim, Yun-Hi;Ju, Byeong Kwon;
12:10:64 Aluminum oxide-n-Si field effect inversion layer solar cells with organic top contact
DOI:10.1063/1.4769041 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Erickson, A. S.;Kedem, N. K.;Haj-Yahia, A. E.;Cahen, D.;
12:10:65 A Multifunction Heterojunction Formed Between Pentacene and a Single-Crystal Silicon Nanomembrane
DOI:10.1002/adfm.201203309 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:8 AU: Seo, Jung-Hun;Oh, Tae-Yeon;Park, Jungho;Zhou, Weidong;Ju, Byeong-Kwon;Ma, Zhenqiang;
12:10:66 Manipulating hybrid structures of polymer/a-Si for thin film solar cells
DOI:10.1063/1.4867474 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Peng, Ying;He, Zhiqun;Diyaf, Adel;Ivaturi, Aruna;Zhang, Zhi;Liang, Chunjun;Wilson, John I. B.;
12:10:67 Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells (Retracted article. See vol. 116, 239904, 2014)
DOI:10.1063/1.4847515 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Khatri, I.;Tang, Z.;Hiate, T.;Liu, Q.;Ishikawa, R.;Ueno, K.;Shirai, H.;
12:10:68 Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films
DOI:10.1016/j.matchemphys.2011.11.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:5 AU: Ben Dkhil, S.;Bourguiga, R.;Davenas, J.;Cornu, D.;
12:10:69 Effects of acid-treated silicon nanowires on hybrid solar cells performance
DOI:10.1016/j.solmat.2012.09.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:0 AU: Jeon, Taewoo;Geffroy, Bernard;Tondelier, Denis;Yu, Linwei;Jegou, Pascale;Jousselme, Bruno;Palacin, Serge;Roca i Cabarrocas, Pere;Bonnassieux, Yvan;
12:10:70 Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone
DOI:10.1063/1.3429585 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Avasthi, Sushobhan;Qi, Yabing;Vertelov, Grigory K.;Schwartz, Jeffrey;Kahn, Antoine;Sturm, James C.;
12:10:71 Real-time measurement of optical anisotropy during film growth using a chemical mist deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
DOI:10.1063/1.4869956 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Hiate, T.;Miyauchi, N.;Liu, Q.;Ishikawa, R.;Ueno, K.;Shirai, H.;
12:10:72 Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept
DOI:10.1016/j.solmat.2014.05.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:8 AU: Zielke, Dimitri;Pazidis, Alexandra;Werner, Florian;Schmidt, Jan;
12:10:73 Solvent-Controlled Spin-Coating Method for Large-Scale Area Deposition of Two-Dimensional Silica Nanosphere Assembled Layers
DOI:10.1021/la5001842 JN:LANGMUIR PY:2014
TC:5 AU: Choi, Jea-Young;Alford, T. L.;Honsberg, Christiana B.;
12:10:74 An amorphous silicon random nanocone/polymer hybrid solar cell
DOI:10.1016/j.solmat.2011.04.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:10 AU: Pei, Zingway;Thiyagu, Subramani;Jhong, Ming-Sian;Hsieh, Wei-Shang;Cheng, Shor-Jen;Ho, Min-Wei;Chen, Yu-Hung;Liu, Jun-Chin;Yeh, Chun-Ming;
12:10:75 Electrical, optical and morphological properties of a new chromogenic calix[4]arene derivative
DOI:10.1016/j.synthmet.2014.09.007 JN:SYNTHETIC METALS PY:2014
TC:0 AU: Ebdelli, R.;Ben Dkhil, S.;Azib, T.;Ben Chaabane, R.;Dumazet-Bonnamour, I.;Ben Ouada, H.;Davenas, J.;
12:10:76 Silicon nanowire/poly(3-hexylthiophene) hybrids for thin film solar cells
DOI:10.1016/j.jnoncrysol.2011.12.044 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Davenas, J.;Beyou, E.;Balloffet, A.;Cornu, D.;Vignoli, S.;
12:10:77 Hybrid solar cells based on P3HT and Si@MWCNT nanocomposite
DOI:10.1088/0957-4484/21/34/345201 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Chen, Lin;Pan, Xiaowei;Zheng, Dingxiang;Gao, Yan;Jiang, Xiaoxia;Xu, Mingsheng;Chen, Hongzheng;
12:10:78 Effect of thermal treatments on the properties of PVK/silicon nanowires films for hybrid solar cells
DOI:10.1016/j.synthmet.2011.06.037 JN:SYNTHETIC METALS PY:2011
TC:4 AU: Ben Dkhil, S.;Davenas, J.;Bourguiga, R.;Cornu, D.;
12:10:79 Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells (Retraction of vol 114, 234506, 2013)
DOI:10.1063/1.4900524 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Khatri, I.;Tang, Z.;Hiate, T.;Liu, Q.;Ishikawa, R.;Ueno, K.;Shirai, H.;
12:10:80 Formation of Stable Nitrene Surface Species by the Reaction of Adsorbed Phenyl Isocyanate at the Ge(100)-2 x 1 Surface
DOI:10.1021/la4036216 JN:LANGMUIR PY:2013
TC:1 AU: Wong, Keith T.;Tanskanen, Jukka T.;Bent, Stacey F.;
12:10:81 In Situ Nanomechanical Measurements of Interfacial Strength in Membrane-Embedded Chemically Functionalized Si Microwires for Flexible Solar Cells
DOI:10.1021/nl3014007 JN:NANO LETTERS PY:2012
TC:5 AU: Cho, Clara J.;O'Leary, Leslie;Lewis, Nathan S.;Greer, Julia R.;
12:10:82 Impact of electrode metals on a pentacene-based write-once read-many memory device
DOI:10.1016/j.synthmet.2010.09.003 JN:SYNTHETIC METALS PY:2010
TC:1 AU: Li, Bin;Yoo, Jung-Woo;Kao, Chi-Yueh;Epstein, Arthur J.;
12:11:1 Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control
DOI:10.1039/c3tc31736f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:9 AU: O'Regan, Colm;Biswas, Subhajit;Petkov, Nikolay;Holmes, Justin D.;
12:11:2 Synthesis and applications of one-dimensional semiconductors
DOI:10.1016/j.pmatsci.2010.02.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2010
TC:187 AU: Barth, Sven;Hernandez-Ramirez, Francisco;Holmes, Justin D.;Romano-Rodriguez, Albert;
12:11:3 Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth
DOI:10.1021/nl1019722 JN:NANO LETTERS PY:2010
TC:57 AU: Dayeh, Shadi A.;Picraux, S. T.;
12:11:4 Structure, Growth Kinetics, and Ledge Flow during Vapor-Solid-Solid Growth of Copper-Catalyzed Silicon Nanowires
DOI:10.1021/nl903362y JN:NANO LETTERS PY:2010
TC:54 AU: Wen, C. -Y.;Reuter, M. C.;Tersoff, J.;Stach, E. A.;Ross, F. M.;
12:11:5 Controlling Heterojunction Abruptness in VLS-Grown Semiconductor Nanowires via in situ Catalyst Alloying
DOI:10.1021/nl201124y JN:NANO LETTERS PY:2011
TC:44 AU: Perea, Daniel E.;Li, Nan;Dickerson, Robert M.;Misra, Amit;Picraux, S. T.;
12:11:6 Synthesis of Tin Catalyzed Silicon and Germanium Nanowires in a Solvent-Vapor System and Optimization of the Seed/Nanowire Interface for Dual Lithium Cycling
DOI:10.1021/cm400367v JN:CHEMISTRY OF MATERIALS PY:2013
TC:23 AU: Mullane, Emma;Kennedy, Tadhg;Geaney, Hugh;Dickinson, Calum;Ryan, Kevin M.;
12:11:7 Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver-Gold Alloy Catalysts
DOI:10.1021/nn301978x JN:ACS NANO PY:2012
TC:23 AU: Chou, Yi-Chia;Wen, Cheng-Yen;Reuter, Mark C.;Su, Dong;Stach, Eric A.;Ross, Frances M.;
12:11:8 High Density Germanium Nanowire Growth Directly from Copper Foil by Self-Induced Solid Seeding
DOI:10.1021/cm202276m JN:CHEMISTRY OF MATERIALS PY:2011
TC:30 AU: Geaney, Hugh;Dickinson, Calum;Barrett, Christopher A.;Ryan, Kevin M.;
12:11:9 Solution phase synthesis of silicon and germanium nanowires
DOI:10.1039/c3tc31123f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Geaney, Hugh;Mullane, Emma;Ryan, Kevin M.;
12:11:10 Defect Transfer from Nanoparticles to Nanowires
DOI:10.1021/nl104339w JN:NANO LETTERS PY:2011
TC:32 AU: Barth, Sven;Boland, John J.;Holmes, Justin D.;
12:11:11 Size-Dependent Phase Diagram of Nanoscale Alloy Drops Used in Vapor-Liquid-Solid Growth of Semiconductor Nanowires
DOI:10.1021/nn101366w JN:ACS NANO PY:2010
TC:34 AU: Sutter, Eli A.;Sutter, Peter W.;
12:11:12 Diameter-Controlled Solid-Phase Seeding of Germanium Nanowires: Structural Characterization and Electrical Transport Properties
DOI:10.1021/cm200646e JN:CHEMISTRY OF MATERIALS PY:2011
TC:25 AU: Barth, Sven;Kolesnik, Maria M.;Donegan, Keith;Krstic, Vojislav;Holmes, Justin D.;
12:11:13 Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires
DOI:10.1021/nl101349e JN:NANO LETTERS PY:2010
TC:33 AU: Gamalski, A. D.;Tersoff, J.;Sharma, R.;Ducati, C.;Hofmann, S.;
12:11:14 Atomically Abrupt Silicon-Germanium Axial Heterostructure Nanowires Synthesized in a Solvent Vapor Growth System
DOI:10.1021/nl400146u JN:NANO LETTERS PY:2013
TC:18 AU: Geaney, Hugh;Mullane, Emma;Ramasse, Quentin M.;Ryan, Kevin M.;
12:11:15 High Density Growth of Indium seeded Silicon Nanowires in the Vapor phase of a High Boiling Point Solvent
DOI:10.1021/cm301023j JN:CHEMISTRY OF MATERIALS PY:2012
TC:18 AU: Geaney, Hugh;Kennedy, Tadhg;Dickinson, Calum;Mullane, Emma;Singh, Ajay;Laffir, Fathima;Ryan, Kevin M.;
12:11:16 Eutectic Combinations as a Pathway to the Formation of Substrate-Based Au-Ge Heterodimers and Hollowed Au Nanocrescents with Tunable Optical Properties
DOI:10.1002/smll.201400383 JN:SMALL PY:2014
TC:5 AU: Sundar, Aarthi;Farzinpour, Pouyan;Gilroy, Kyle D.;Tan, Teng;Hughes, Robert A.;Neretina, Svetlana;
12:11:17 Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires
DOI:10.1021/nl302800u JN:NANO LETTERS PY:2012
TC:10 AU: Biswas, Subhajit;Singha, Achintya;Morris, Michael A.;Holmes, Justin D.;
12:11:18 High-yield, high-throughput synthesis of germanium nanowires by metal-organic chemical vapor deposition and their functionalization and applications
DOI:10.1039/c1jm14875c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:17 AU: Yang, Hong-Jie;Tuan, Hsing-Yu;
12:11:19 Morphology and composition of Au catalysts on Ge(111) obtained by thermal dewetting
DOI:10.1103/PhysRevB.84.125325 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Hajjar, S.;Garreau, G.;Josien, L.;Bubendorff, J. L.;Berling, D.;Mehdaoui, A.;Pirri, C.;Maroutian, T.;Renard, C.;Bouchier, D.;Petit, M.;Spiesser, A.;Dau, M. T.;Michez, L.;Thanh, V. Le;Mentes, T. O.;Nino, M. A.;Locatelli, A.;
12:11:20 Engineering the Growth of Germanium Nanowires by Tuning the Supersaturation of Au/Ge Binary Alloy Catalysts
DOI:10.1021/cm401281y JN:CHEMISTRY OF MATERIALS PY:2013
TC:9 AU: O'Regan, Colm;Biswas, Subhajit;O'Kelly, Curtis;Jung, Soon Jung;Boland, John J.;Petkov, Nikolay;Holmes, Justin D.;
12:11:21 Enhanced Nickel-Seeded Synthesis of Germanium Nanowires
DOI:10.1021/cm401047w JN:CHEMISTRY OF MATERIALS PY:2013
TC:5 AU: Lu, Xiaotang;Harris, Justin T.;Villarreal, Julian E.;Chockla, Aaron M.;Korgel, Brian A.;
12:11:22 Seeded silicon nanowire growth catalyzed by commercially available bulk metals: broad selection of metal catalysts, superior field emission performance, and versatile nanowire/metal architectures
DOI:10.1039/c1jm11956g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:13 AU: Yuan, Fang-Wei;Yang, Hong-Jie;Tuan, Hsing-Yu;
12:11:23 Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires
DOI:10.1039/c3tc32038c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Musin, I. R.;Shin, N.;Filler, M. A.;
12:11:24 Functional semiconductor nanowires via vapor deposition
DOI:10.1116/1.3641913 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:9 AU: Shi, Jian;Wang, Xudong;
12:11:25 Manipulating the Growth Kinetics of Vapor-Liquid-Solid Propagated Ge Nanowires
DOI:10.1021/nl401250x JN:NANO LETTERS PY:2013
TC:14 AU: Biswas, Subhajit;O'Regan, Colm;Petkov, Nikolay;Morris, Michael A.;Holmes, Justin D.;
12:11:26 A Rapid, Solvent-Free Protocol for the Synthesis of Germanium Nanowire Lithium-Ion Anodes with a Long Cycle Life and High Rate Capability
DOI:10.1021/am5045168 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Mullane, Emma;Kennedy, Tadhg;Geaney, Hugh;Ryan, Kevin M.;
12:11:27 Containing the catalyst: diameter controlled Ge nanowire growth
DOI:10.1039/c3tc30846d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:1 AU: Lotty, Olan;Biswas, Subhajit;Ghoshal, Tandra;Glynn, Colm;O'Dwyer, Colm;Petkov, Nikolay;Morris, Michael A.;Holmes, Justin D.;
12:11:28 Seedless Growth of Sub-10 nm Germanium Nanowires
DOI:10.1021/ja1035368 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:22 AU: Hobbs, Richard G.;Barth, Sven;Petkov, Nikolay;Zirngast, Michaele;Marschner, Christoph;Morris, Michael A.;Holmes, Justin D.;
12:11:29 Molten Au/Ge Alloy Migration in Ge Nanowires
DOI:10.1021/acs.nanolett.5b01144 JN:NANO LETTERS PY:2015
TC:0 AU: Liu, Qian;Zou, Rujia;Wu, Jianghong;Xu, Kaibing;Lu, Aijiang;Bando, Yoshio;Golberg, Dmitri;Hu, Junqing;
12:11:30 Size-controlled growth of germanium nanowires from ternary eutectic alloy catalysts
DOI:10.1039/c4tc00136b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: O'Regan, Colm;Biswas, Subhajit;Barth, Sven;Morris, Michael A.;Petkov, Nikolay;Holmes, Justin D.;
12:11:31 Germanium Nanowire Synthesis from Fluorothiolate-Capped Gold Nanoparticles in Supercritical Carbon Dioxide
DOI:10.1021/cm1012137 JN:CHEMISTRY OF MATERIALS PY:2010
TC:15 AU: Collins, Gillian;Kolesnik, Maria;Krstic, Vojislav;Holmes, Justin D.;
12:11:32 Axial SiGe Heteronanowire Tunneling Field-Effect Transistors
DOI:10.1021/nl3032058 JN:NANO LETTERS PY:2012
TC:16 AU: Le, Son T.;Jannaty, P.;Luo, Xu;Zaslavsky, A.;Perea, Daniel E.;Dayeh, Shadi A.;Picraux, S. T.;
12:11:33 Control of Lateral Dimension in Metal-Catalyzed Germanium Nanowire Growth: Usage of Carbon Sheath
DOI:10.1021/nl3012984 JN:NANO LETTERS PY:2012
TC:7 AU: Kim, Byung-Sung;Kim, Min Jin;Lee, Jong Cheol;Hwang, Sung Woo;Choi, Byoung Lyong;Lee, Eun Kyung;Whang, Dongmok;
12:11:34 Heat transport across a SiGe nanowire axial junction: Interface thermal resistance and thermal rectification
DOI:10.1103/PhysRevB.90.041408 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Rurali, Riccardo;Cartoixa, Xavier;Colombo, Luciano;
12:11:35 Anomalous junctions characterized by Raman spectroscopy in SixGe1-x nanowires with axially degraded components
DOI:10.1063/1.4895515 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xia, Minggang;Han, Jinyun;Cheng, Zhaofang;Liang, Chunping;Zhang, Shengli;
12:11:36 Metal surface nucleated supercritical fluid-solid-solid growth of Si and Ge/SiOx core-shell nanowires
DOI:10.1039/b914950c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:17 AU: Barrett, Christopher A.;Gunning, Robert D.;Hantschel, Thomas;Arstila, Kai;O'Sullivan, Catriona;Geaney, Hugh;Ryan, Kevin M.;
12:11:37 Formation and stabilization of single-crystalline metastable AuGe phases in Ge nanowires
DOI:10.1088/0957-4484/22/29/295605 JN:NANOTECHNOLOGY PY:2011
TC:13 AU: Sutter, E.;Sutter, P.;
12:11:38 Nanoscale Structural Engineering via Phase Segregation: Au-Ge System
DOI:10.1021/nl902597m JN:NANO LETTERS PY:2010
TC:16 AU: Chueh, Yu-Lun;Boswell, Cosima N.;Yuan, Chun-Wei;Shin, Swanee J.;Takei, Kuniharu;Ho, Johnny C.;Ko, Hyunhyub;Fan, Zhiyong;Haller, E. E.;Chrzan, D. C.;Javey, Ali;
12:11:39 Epitaxy of Ge Nanowires Grown from Biotemplated Au Nanoparticle Catalysts
DOI:10.1021/nn901664r JN:ACS NANO PY:2010
TC:13 AU: Sierra-Sastre, Yajaira;Dayeh, Shadi A.;Picraux, S. T.;Batt, Carl A.;
12:11:40 Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System
DOI:10.1021/cm302066n JN:CHEMISTRY OF MATERIALS PY:2012
TC:10 AU: Geaney, Hugh;Dickinson, Calum;O'Dwyer, Colm;Mullane, Emma;Singh, Ajay;Ryan, Kevin M.;
12:11:41 Evolution of zinc oxide nanostructures through kinetics control
DOI:10.1039/c1jm10918a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:16 AU: Shi, Jian;Hong, Hao;Ding, Yong;Yang, Yunan;Wang, Fei;Cai, Weibo;Wang, Xudong;
12:11:42 Direct growth of germanium and silicon nanowires on metal films
DOI:10.1039/c3tc31666a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Richards, Benjamin T.;Gaskey, Bernard;Levin, Barnaby D. A.;Whitham, Kevin;Muller, David;Hanrath, Tobias;
12:11:43 Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials
DOI:10.1021/nl100670r JN:NANO LETTERS PY:2010
TC:15 AU: Shin, S. J.;Guzman, J.;Yuan, C. -W.;Liao, Christopher Y.;Boswell-Koller, Cosima N.;Stone, P. R.;Dubon, O. D.;Minor, A. M.;Watanabe, Masashi;Beeman, Jeffrey W.;Yu, K. M.;Ager, J. W., III;Chrzan, D. C.;Haller, E. E.;
12:11:44 Real-Time Observation of the Solid-Liquid-Vapor Dissolution of Individual Tin(IV) Oxide Nanowires
DOI:10.1021/nn5007804 JN:ACS NANO PY:2014
TC:1 AU: Hudak, Bethany M.;Chang, Yao-Jen;Yu, Lei;Li, Guohua;Edwards, Danielle N.;Guiton, Beth S.;
12:11:45 Advanced core/multishell germanium/silicon nanowire heterostructures: The Au-diffusion bottleneck
DOI:10.1063/1.3567932 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Dayeh, Shadi A.;Mack, Nathan H.;Huang, Jian Yu;Picraux, S. T.;
12:11:46 Colloidal Synthesis of Germanium Nanorods
DOI:10.1021/cm2001607 JN:CHEMISTRY OF MATERIALS PY:2011
TC:25 AU: Chockla, Aaron M.;Harris, Justin T.;Korgel, Brian A.;
12:11:47 Silver catalyzed ultrathin silicon nanowires grown by low-temperature chemical-vapor-deposition
DOI:10.1063/1.3393601 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Wittemann, Joerg V.;Muenchgesang, Wolfram;Senz, Stephan;Schmidt, Volker;
12:11:48 Metastable Crystalline AuGe Catalysts Formed During Isothermal Germanium Nanowire Growth
DOI:10.1103/PhysRevLett.108.255702 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:7 AU: Gamalski, A. D.;Tersoff, J.;Sharma, R.;Ducati, C.;Hofmann, S.;
12:11:49 Controlled Synthesis of Germanium Nanowires and Nanotubes with Variable Morphologies and Sizes
DOI:10.1021/nl200229p JN:NANO LETTERS PY:2011
TC:22 AU: Li, Xiangdong;Meng, Guowen;Xu, Qiaoling;Kong, Mingguang;Zhu, Xiaoguang;Chu, Zhaoqin;Li, An-Ping;
12:11:50 Growth Pathways in Ultralow Temperature Ge Nucleation from Au
DOI:10.1021/nl303225a JN:NANO LETTERS PY:2012
TC:10 AU: Kim, B. J.;Wen, C. -Y.;Tersoff, J.;Reuter, M. C.;Stach, E. A.;Ross, F. M.;
12:11:51 A Time-Resolved Numerical Study of the Vapor-Liquid-Solid Growth Kinetics Describing the Initial Nucleation Phase as well as Pulsed Deposition Processes
DOI:10.1021/nl3033075 JN:NANO LETTERS PY:2013
TC:8 AU: Eisenhawer, Bjoern;Sivakov, Vladimir;Christiansen, Silke;Falk, Fritz;
12:11:52 Axial bandgap engineering in germanium-silicon heterostructured nanowires
DOI:10.1063/1.3634050 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Dayeh, Shadi A.;Dickerson, Robert M.;Picraux, S. Thomas;
12:11:53 Germanium nanowire synthesis using solid precursors
DOI:10.1016/j.jcrysgro.2014.01.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Aksoy, Burcu;Kalay, Yunus Eren;Unalan, Husnu Emrah;
12:11:54 Growth of monocrystalline In2O3 nanowires by a seed orientation dependent vapour-solid-solid mechanism
DOI:10.1039/c4tc00878b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Barth, Sven;Seifner, Michael S.;Bernardi, Johannes;
12:11:55 Surface chemistry controlled diameter-modulated semiconductor nanowire superstructures
DOI:10.1116/1.4792660 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:7 AU: Musin, Ildar R.;Boyuk, Dmitriy S.;Filler, Michael A.;
12:11:56 Diameter-Dependent or Independent: Toward a Mechanistic Understanding of the Vapor-Liquid-Solid Si Nanowire Growth Rate
DOI:10.1021/nl301410t JN:NANO LETTERS PY:2012
TC:9 AU: Lu, Y. Y.;Cui, H.;Yang, G. W.;Wang, C. X.;
12:11:57 Structures of BiInSn nanoparticles formed through laser ablation
DOI:10.1007/s00339-012-7244-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Musaev, O. R.;Sutter, E.;Wrobel, J. M.;Kruger, M. B.;
12:11:58 Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor
DOI:10.1063/1.4892950 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Peng;Le, Son T.;Hou, Xiaoxiao;Zaslavsky, A.;Perea, Daniel E.;Dayeh, Shadi A.;Picraux, S. T.;
12:11:59 Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
DOI:10.1088/0957-4484/21/29/295602 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Jung, Jae Hun;Yoon, Hyun Sik;Kim, Yu Lee;Song, Man Suk;Kim, Yong;Chen, Zhi Gang;Zou, Jin;Choi, Duk Yong;Kang, Jung Hyun;Joyce, Hannah J.;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;
12:11:60 Reversible phase changes in Ge-Au nanoparticles
DOI:10.1063/1.3584850 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Guzman, J.;Boswell-Koller, C. N.;Beeman, J. W.;Bustillo, K. C.;Conry, T.;Dubon, O. D.;Hansen, W. L.;Levander, A. X.;Liao, C. Y.;Lieten, R. R.;Sawyer, C. A.;Sherburne, M. P.;Shin, S. J.;Stone, P. R.;Watanabe, M.;Yu, K. M.;Ager, J. W., III;Chrzan, D. C.;Haller, E. E.;
12:11:61 Self-Seeded Growth of Germanium Nanowires: Coalescence and Ostwald Ripening
DOI:10.1021/cm3032863 JN:CHEMISTRY OF MATERIALS PY:2013
TC:6 AU: Lotty, Olan;Hobbs, Richard;O'Regan, Colm;Hlina, Johann;Marschner, Christoph;O'Dwyer, Colm;Petkov, Nikolay;Holmes, Justin D.;
12:11:62 Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage
DOI:10.1063/1.3359648 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Chen, W. H.;Larde, R.;Cadel, E.;Xu, T.;Grandidier, B.;Nys, J. P.;Stievenard, D.;Pareige, P.;
12:11:63 Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst
DOI:10.1063/1.4749797 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Thombare, S. V.;Marshall, A. F.;McIntyre, P. C.;
12:11:64 Germanium nanowire synthesis using a localized heat source and a comparison to synthesis in a uniform temperature environment
DOI:10.1557/jmr.2011.181 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:2 AU: Redcay, Christopher J.;Englander, Ongi;
12:11:65 Au, Ge, and AuGe nanoparticles fabricated by laser ablation
DOI:10.1007/s11051-011-0654-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Musaev, Omar R.;Sutter, Eli A.;Wrobel, Jerzy M.;Kruger, Michael B.;
12:11:66 Surface Energy Driven Agglomeration and Growth of Single Crystal Metal Wires
DOI:10.1021/nl104357e JN:NANO LETTERS PY:2011
TC:5 AU: Jung, Soon Jung;Lutz, Tarek;Boese, Markus;Holmes, Justin D.;Boland, John J.;
12:11:67 Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
DOI:10.1016/j.tsf.2011.10.089 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Renard, C.;Boukhicha, R.;Gardes, C.;Fossard, F.;Yam, V.;Vincent, L.;Bouchier, D.;Hajjar, S.;Bubendorff, J. L.;Garreau, G.;Pirri, C.;
12:11:68 Supercooling of nanoscale Ga drops with controlled impurity levels
DOI:10.1103/PhysRevB.84.193303 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Sutter, Eli A.;Sutter, Peter W.;Uccelli, Emanuele;Fontcuberta i Morral, Anna;
12:11:69 Nanochannel-Directed Growth of Multi-Segment Nanowire Heterojunctions of Metallic Au1-xGex and Semiconducting Ge
DOI:10.1021/nn2043466 JN:ACS NANO PY:2012
TC:3 AU: Li, Xiangdong;Meng, Guowen;Qin, Shengyong;Xu, Qiaoling;Chu, Zhaoqin;Zhu, Xiaoguang;Kong, Mingguang;Li, An-Ping;
12:11:70 Vapor-liquid-solid growth and Sb doping of Ge nanowires from a liquid Au-Sb-Ge ternary alloy
DOI:10.1007/s00339-009-5502-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:6 AU: Sutter, Eli;Sutter, Peter;
12:11:71 Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
DOI:10.1063/1.4721666 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Rath, A.;Dash, J. K.;Juluri, R. R.;Schowalter, Marco;Mueller, Knut;Rosenauer, A.;Satyarn, P. V.;
12:11:72 Enhanced synthesis of Sn nanowires with aid of Se atom via physical vapor transport
DOI:10.1010/j.jcrysgro.2015.03.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Cai, Huacheng;Wang, Wendong;Liu, Peiwen;Wang, Guangming;Liu, Ankang;He, Zhe;Cheng, Zhaofang;Zhang, Shengli;Xia, Minggang;
12:11:73 Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires
DOI:10.1088/0957-4484/23/39/395701 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Vincent, L.;Boukhicha, R.;Cherkashin, N.;Reboh, S.;Patriarche, G.;Renard, C.;Yam, V.;Fossard, F.;Bouchier, D.;
12:11:74 Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor-Liquid-Solid Growth
DOI:10.1021/nl100913d JN:NANO LETTERS PY:2010
TC:9 AU: Marshall, Ann F.;Goldthorpe, Irene A.;Adhikari, Hemant;Koto, Makoto;Wang, Young-Chung;Fu, Lianfeng;Olsson, Eva;McIntyre, Paul C.;
12:11:75 Step-Flow Kinetics Model for the Vapor Solid Solid Si Nanowires Growth
DOI:10.1021/acs.nanolett.5b01442 JN:NANO LETTERS PY:2015
TC:0 AU: Cui, H.;Lu, Y. Y.;Yang, G. W.;Chen, Y. M.;Wang, C. X.;
12:11:76 Gold-Catalyzed Vapor-Liquid-Solid Germanium-Nanowire Nucleation on Porous Silicon
DOI:10.1002/smll.200901764 JN:SMALL PY:2010
TC:11 AU: Koto, Makoto;Marshall, Ann F.;Goldthorpe, Irene A.;McIntyre, Paul C.;
12:11:77 Modeling pulsed-laser melting of embedded semiconductor nanoparticles
DOI:10.1063/1.3658265 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Sawyer, C. A.;Guzman, J.;Boswell-Koller, C. N.;Sherburne, M. P.;Mastandrea, J. P.;Bustillo, K. C.;Ager, J. W., III;Haller, E. E.;Chrzan, D. C.;
12:11:78 A nucleation-growth model of nanowires produced by the vapor-liquid-solid process
DOI:10.1063/1.4817794 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Li, Na;Li, Wenxuan;Liu, Lijun;Tan, Teh Y.;
12:11:79 A facile low-temperature growth of large-scale uniform two-end-open Ge nanotubes with hierarchical branches
DOI:10.1039/c3tc30921e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Li, Xiangdong;Meng, Guowen;Li, An-Ping;Chu, Zhaoqin;Zhua, Xiaoguang;Konga, Mingguang;
12:11:80 Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth
DOI:10.1557/jmr.2011.313 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:3 AU: Park, Se Jun;Chung, Sung Hwan;Kim, Bong-Joong;Qi, Minghao;Xu, Xianfan;Stach, Eric A.;Yang, Chen;
12:11:81 Generation of AuGe nanocomposites by co-sparking technique and their photoluminescence properties
DOI:10.1007/s11051-013-1963-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Kala, Shubhra;Theissmann, Ralf;Kruis, Frank Einar;
12:11:82 Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation
DOI:10.1088/0957-4484/22/3/035201 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Burchhart, T.;Zeiner, C.;Lugstein, A.;Henkel, C.;Bertagnolli, E.;
12:11:83 Size-Dependent Silicon Epitaxy at Mesoscale Dimensions
DOI:10.1021/n1502085z JN:NANO LETTERS PY:2014
TC:2 AU: Yoo, Jinkyoung;Dayeh, Shadi A.;Bartelt, Norman C.;Tang, Wei;Findikoglu, Alp T.;Picraux, S. Tom;
12:11:84 The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts
DOI:10.1080/14786431003745583 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:5 AU: Ross, F. M.;Wen, C. -Y.;Kodambaka, S.;Wacaser, B. A.;Reuter, M. C.;Stach, E. A.;
12:11:85 Citrate-stabilized palladium nanoparticles as catalysts for sub-20 nm epitaxial silicon nanowires
DOI:10.1063/1.3460918 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Wittemann, J. V.;Kipke, A.;Pippel, E.;Senz, S.;Vogel, A. T.;de Boor, J.;Kim, D. S.;Hyeon, T.;Schmidt, V.;
12:11:86 Interfacial free energies determined from binary embedded alloy nanocluster geometry
DOI:10.1063/1.4828937 JN:APL MATERIALS PY:2013
TC:0 AU: Boswell-Koller, C. N.;Shin, S. J.;Guzman, J.;Sherburne, M. P.;Bustillo, K. C.;Sawyer, C. A.;Mastandrea, J. P.;Beeman, J. W.;Ager, J. W., III;Haller, E. E.;Chrzan, D. C.;
12:11:87 Influence of Precursor Chemistry on Morphology and Composition of CVD-Grown SnO2 Nanowires
DOI:10.1021/cm300913h JN:CHEMISTRY OF MATERIALS PY:2012
TC:10 AU: Mueller, Ralf;Hernandez-Ramirez, Francisco;Shen, Hao;Du, Hongchu;Mader, Werner;Mathur, Sanjay;
12:11:88 Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature
DOI:10.1016/j.jcrysgro.2013.09.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Simanullang, Marolop;Usami, Koichi;Kodera, Tetsuo;Kawano, Yukio;Oda, Shunri;
12:11:89 High performance Omega-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts
DOI:10.1088/0957-4484/21/43/435704 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Burchhart, T.;Zeiner, C.;Hyun, Y. J.;Lugstein, A.;Hochleitner, G.;Bertagnolli, E.;
12:11:90 Atypical Self-Activation of Ga Dopant for Ge Nanowire Devices
DOI:10.1021/nl201105k JN:NANO LETTERS PY:2011
TC:5 AU: Zeiner, Clemens;Lugstein, Alois;Burchhart, Thomas;Pongratz, Peter;Connell, Justin G.;Lauhon, Lincoln J.;Bertagnolli, Emmerich;
12:11:91 Cu nanoparticles on 2D and 3D silica substrates: controlled size and density, and critical size in catalytic silicon nanowire growth
DOI:10.1039/c2tc00796g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Roussey, Arthur;Gentile, Pascal;Lafond, Dominique;Martinez, Eugenie;Jousseaume, Vincent;Thieuleux, Chloe;Coperet, Christophe;
12:11:92 Alternative vapor-liquid-solid process in Au-assisted growth of silica nanowires
DOI:10.1016/j.matlet.2014.03.005 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Yoon, Jong-Hwan;
12:11:93 Germanium nanowires: Synthesis, electrical and "catalytic" properties
DOI:10.1016/j.matchemphys.2010.01.025 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:3 AU: Tao, Yu;Zhang, Guoqing;Xia, Yanping;Wang, Hui;Gong, Fanghong;Wu, Haiping;Tao, Guoliang;
12:11:94 Silver induced faceting of Si(112)
DOI:10.1063/1.3464555 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Nabbefeld, T.;Wiethoff, C.;Heringdorf, F. -J. Meyer Zu;Horn-von Hoegen, M.;
12:11:95 Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst
DOI:10.1063/1.4833935 JN:APL MATERIALS PY:2013
TC:2 AU: Thombare, Shruti V.;Marshall, Ann F.;McIntyre, Paul C.;
12:11:96 Metastable Ge1-xCx Alloy Nanowires
DOI:10.1021/am201446u JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:1 AU: Kim, Byung-Sung;Lee, Jae-Hyun;Son, Kiseok;Hwang, Sung Woo;Choi, Byoung Lyong;Lee, Eun Kyung;Kim, Jong Min;Whang, Dongmok;
12:11:97 Critical thickness of contact melting in the Au/Ge layered film system
DOI:10.1016/j.jallcom.2011.09.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Kryshtal, A. P.;Sukhov, R. V.;Minenkov, A. A.;
12:11:98 Sn-based Chalcogenide Composite as a High-Capacity Anode Material for Lithium Rechargeable Batteries
DOI:10.1111/j.1551-2916.2012.05194.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:1 AU: Lee, Youngmin;Bae, Suk-Rok;Park, Bong Je;Shin, Dong Wook;Chung, Woon Jin;Kang, Yong-Mook;
12:11:99 GaN nanowires grown on silicon substrates engraved using stainless-steel micro-tip
DOI:10.1016/j.matlet.2011.05.024 JN:MATERIALS LETTERS PY:2011
TC:0 AU: Dhamodaran, S.;Chander, D. Sathish;Ramkumar, J.;
12:11:100 The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts
DOI:10.1080/14786435.2010.527713 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:2 AU: Ross, F. M.;Wen, C. -Y.;Kodambaka, S.;Wacaser, B. A.;Reuter, M. C.;Stach, E. A.;
12:12:1 Semiconductor Nanowire Optical Antenna Solar Absorbers
DOI:10.1021/nl9036627 JN:NANO LETTERS PY:2010
TC:211 AU: Cao, Linyou;Fan, Pengyu;Vasudev, Alok P.;White, Justin S.;Yu, Zongfu;Cai, Wenshan;Schuller, Jon A.;Fan, Shanhui;Brongersma, Mark L.;
12:12:2 Tuning Light Absorption in Core/Shell Silicon Nanowire Photovoltaic Devices through Morphological Design
DOI:10.1021/nl302578z JN:NANO LETTERS PY:2012
TC:96 AU: Kim, Sun-Kyung;Day, Robert W.;Cahoon, James F.;Kempa, Thomas J.;Song, Kyung-Deok;Park, Hong-Gyu;Lieber, Charles M.;
12:12:3 Multicolored Vertical Silicon Nanowires
DOI:10.1021/nl200201b JN:NANO LETTERS PY:2011
TC:113 AU: Seo, Kwanyong;Wober, Munib;Steinvurzel, Paul;Schonbrun, Ethan;Dan, Yaping;Ellenbogen, Tal;Crozier, Kenneth B.;
12:12:4 Resonant Germanium Nanoantenna Photodetectors
DOI:10.1021/nl9037278 JN:NANO LETTERS PY:2010
TC:115 AU: Cao, Linyou;Park, Joon-Shik;Fan, Pengyu;Clemens, Bruce;Brongersma, Mark L.;
12:12:5 Tuning the Color of Silicon Nanostructures
DOI:10.1021/nl1013794 JN:NANO LETTERS PY:2010
TC:79 AU: Cao, Linyou;Fan, Pengyu;Barnard, Edward S.;Brown, Ana M.;Brongersma, Mark L.;
12:12:6 Optical Properties of Individual Silicon Nanowires for Photonic Devices
DOI:10.1021/nn101076t JN:ACS NANO PY:2010
TC:66 AU: Broenstrup, Gerald;Jahr, Norbert;Leiterer, Christian;Csaki, Andrea;Fritzsche, Wolfgang;Christiansen, Silke;
12:12:7 Design Principles for Photovoltaic Devices Based on Si Nanowires with Axial or Radial p-n Junctions
DOI:10.1021/nl303610m JN:NANO LETTERS PY:2012
TC:39 AU: Christesen, Joseph D.;Zhang, Xing;Pinion, Christopher W.;Celano, Thomas A.;Flynn, Cory J.;Cahoon, James F.;
12:12:8 Dielectric Core-Shell Optical Antennas for Strong Solar Absorption Enhancement
DOI:10.1021/nl301435r JN:NANO LETTERS PY:2012
TC:51 AU: Yu, Yiling;Ferry, Vivian E.;Alivisatos, A. Paul;Cao, Linyou;
12:12:9 Nanowire Antenna Absorption Probed with Time-Reversed Fourier Microscopy
DOI:10.1021/nl5005948 JN:NANO LETTERS PY:2014
TC:5 AU: Grzela, Grzegorz;Paniagua-Dominguez, Ramon;Barten, Tommy;van Dam, Dick;Sanchez-Gil, Jose A.;Rivas, Jaime Gomez;
12:12:10 Optical Properties of Crystalline-Amorphous Core-Shell Silicon Nanowires
DOI:10.1021/nl102183x JN:NANO LETTERS PY:2010
TC:59 AU: Adachi, M. M.;Anantram, M. P.;Karim, K. S.;
12:12:11 Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated with an Octahedral Silver Nanocrystal
DOI:10.1021/nl2023806 JN:NANO LETTERS PY:2011
TC:40 AU: Brittman, Sarah;Gao, Hanwei;Garnett, Erik C.;Yang, Peidong;
12:12:12 Extreme Light Absorption in Thin Semiconductor Films Wrapped around Metal Nanowires
DOI:10.1021/nl401179h JN:NANO LETTERS PY:2013
TC:32 AU: Mann, Sander A.;Garnett, Erik C.;
12:12:13 Silicon Nanopillars for Field-Enhanced Surface Spectroscopy
DOI:10.1021/nn204110z JN:ACS NANO PY:2012
TC:34 AU: Wells, Sabrina M.;Merkulov, Igor A.;Kravchenko, Ivan I.;Lavrik, Nickolay V.;Sepaniak, Michael J.;
12:12:14 Diameter and Polarization-Dependent Raman Scattering Intensities of Semiconductor Nanowires
DOI:10.1021/nl204537d JN:NANO LETTERS PY:2012
TC:17 AU: Lopez, Francisco J.;Hyun, Jerome K.;Givan, Uri;Kim, In Soo;Holsteen, Aaron L.;Lauhon, Lincoln J.;
12:12:15 On Demand Shape-Selective Integration of Individual Vertical Germanium Nanowires on a Si(111) Substrate via Laser-Localized Heating
DOI:10.1021/nn400186c JN:ACS NANO PY:2013
TC:7 AU: Ryu, Sang-gil;Kim, Eunpa;Yoo, Jae-hyuck;Hwang, David J.;Xiang, Bin;Dubon, Oscar D.;Minor, Andrew M.;Grigoropoulos, Costas P.;
12:12:16 Nanowire Antenna Emission
DOI:10.1021/nl301907f JN:NANO LETTERS PY:2012
TC:34 AU: Grzela, Grzegorz;Paniagua-Dominguez, Ramon;Barten, Tommy;Fontana, Yannik;Sanchez-Gil, Jose A.;Rivas, Jaime Gomez;
12:12:17 Resonant Modes of Single Silicon Nanocavities Excited by Electron Irradiation
DOI:10.1021/nn3056862 JN:ACS NANO PY:2013
TC:15 AU: Coenen, Toon;van de Groep, Jorik;Polman, Albert;
12:12:18 Metal-Core/Semiconductor-Shell Nanocones for Broadband Solar Absorption Enhancement
DOI:10.1021/nl500008y JN:NANO LETTERS PY:2014
TC:17 AU: Zhou, Lin;Yu, Xiaoqiang;Zhu, Jia;
12:12:19 Color Matrix Refractive Index Sensors Using Coupled Vertical Silicon Nanowire Arrays
DOI:10.1021/nl301840y JN:NANO LETTERS PY:2012
TC:24 AU: Khorasaninejad, M.;Abedzadeh, N.;Walia, J.;Patchett, S.;Saini, S. S.;
12:12:20 Aluminum Plasmonics for Enhanced Visible Light Absorption and High Efficiency Water Splitting in Core-Multishell Nanowire Photoelectrodes with Ultrathin Hematite Shells
DOI:10.1021/nl501541s JN:NANO LETTERS PY:2014
TC:8 AU: Ramadurgam, Sarath;Lin, Tzu-Ging;Yang, Chen;
12:12:21 Spatially Resolved Plasmonically Enhanced Photocurrent from Au Nanoparticles on a Si Nanowire
DOI:10.1021/nl201021k JN:NANO LETTERS PY:2011
TC:29 AU: Hyun, Jerome K.;Lauhon, Lincoln J.;
12:12:22 Light Trapping for Solar Fuel Generation with Mie Resonances
DOI:10.1021/nl404575e JN:NANO LETTERS PY:2014
TC:8 AU: Kim, Soo Jin;Thomann, Isabel;Park, Junghyun;Kang, Ju-Hyung;Vasudev, Alok P.;Brongersma, Mark L.;
12:12:23 Theory of Half-Space Light Absorption Enhancement for Leaky Mode Resonant Nanowires
DOI:10.1021/acs.nanolett.5b02044 JN:NANO LETTERS PY:2015
TC:0 AU: Jia, Yiming;Qiu, Min;Wu, Hui;Cui, Yi;Fan, Shanhui;Ruan, Zhichao;
12:12:24 Tunable enhancement of light absorption and scattering in Si1-xGex nanowires
DOI:10.1103/PhysRevB.86.085318 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Kallel, Houssem;Arbouet, Arnaud;BenAssayag, Gerard;Chehaidar, Abdallah;Potie, Alexis;Salem, Bassem;Baron, Thierry;Paillard, Vincent;
12:12:25 Design of Nanowire Optical Cavities as Efficient Photon Absorbers
DOI:10.1021/nn5003776 JN:ACS NANO PY:2014
TC:18 AU: Kim, Sun-Kyung;Song, Kyung-Deok;Kempa, Thomas J.;Day, Robert W.;Lieber, Charles M.;Park, Hong-Gyu;
12:12:26 Enhanced external quantum efficiency in rectangular single nanowire solar cells
DOI:10.1063/1.4775578 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Li, Xiaofeng;Zhan, Yaohui;
12:12:27 Optical absorption of silicon nanowires
DOI:10.1063/1.4739708 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Xu, T.;Lambert, Y.;Krzeminski, C.;Grandidier, B.;Stievenard, D.;Leveque, G.;Akjouj, A.;Pennec, Y.;Djafari-Rouhani, B.;
12:12:28 Diameter dependence of polarization resolved reflectance from vertical silicon nanowire arrays: Evidence of tunable absorption
DOI:10.1063/1.4813081 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Khorasaninejad, M.;Patchett, S.;Sun, J.;O, N.;Saini, S. S.;
12:12:29 Geometrical control of photocurrent in active Si nanowire devices
DOI:10.1016/j.nanoen.2012.05.010 JN:NANO ENERGY PY:2012
TC:4 AU: Solanki, Amit;Gentile, Pascal;Calvo, Vincent;Rosaz, Guillaume;Salem, Bassem;Aimez, Vincent;Drouin, Dominique;Pauc, Nicolas;
12:12:30 Broadband Quantum Efficiency Enhancement in High Index Nanowire Resonators
DOI:10.1021/acs.nanolett.5b01008 JN:NANO LETTERS PY:2015
TC:0 AU: Yang, Yiming;Peng, Xingyue;Hyatt, Steven;Yu, Dong;
12:12:31 A Comparative Study of Absorption in Vertically and Laterally Oriented InP Core-Shell Nanowire Photovoltaic Devices
DOI:10.1021/nl504559g JN:NANO LETTERS PY:2015
TC:1 AU: Nowzari, Ali;Heurlin, Magnus;Jain, Vishal;Storm, Kristian;Hosseinnia, Ali;Anttu, Nicklas;Borgstrom, Magnus T.;Pettersson, Hakan;Samuelson, Lars;
12:12:32 Beneficial roles of Al back reflectors in optical absorption of Si nanowire array solar cells
DOI:10.1063/1.4820525 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Lee, Eunsongyi;Zhou, Keya;Gwon, Minji;Jung, Jin-Young;Lee, Jung-Ho;Kim, Dong-Wook;
12:12:33 Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes
DOI:10.1063/1.4898758 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Fountaine, Katherine T.;Whitney, William S.;Atwater, Harry A.;
12:12:34 A precise optical determination of nanoscale diameters of semiconductor nanowires
DOI:10.1088/0957-4484/22/38/385201 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Broenstrup, G.;Leiterer, C.;Jahr, N.;Gutsche, C.;Lysov, A.;Regolin, I.;Prost, W.;Tegude, F. J.;Fritzsche, W.;Christiansen, S.;
12:12:35 Structural Coloring in Large Scale Core-Shell Nanowires
DOI:10.1021/nl2022114 JN:NANO LETTERS PY:2011
TC:17 AU: Khudiyev, Tural;Ozgur, Erol;Yaman, Mecit;Bayindir, Mehmet;
12:12:36 Optical Coupling of Deep-Subwavelength Semiconductor Nanowires
DOI:10.1021/nl1040429 JN:NANO LETTERS PY:2011
TC:26 AU: Cao, Linyou;Fan, Pengyu;Brongersma, Mark L.;
12:12:37 Enhanced Photothermal Conversion in Vertically Oriented Gallium Arsenide Nanowire Arrays
DOI:10.1021/n15026979 JN:NANO LETTERS PY:2014
TC:2 AU: Walia, Jaspreet;Dhindsa, Navneet;Flannery, Jeremy;Khodabad, Iman;Forrest, James;LaPierre, Ray;Saini, Sirnarjeet S.;
12:12:38 Filter-Free Image Sensor Pixels Comprising Silicon Nanowires with Selective Color Absorption
DOI:10.1021/nl404379w JN:NANO LETTERS PY:2014
TC:11 AU: Park, Hyunsung;Dan, Yaping;Seo, Kwanyong;Yu, Young J.;Duane, Peter K.;Wober, Munib;Crozier, Kenneth B.;
12:12:39 Highly enhanced Raman scattering from coupled vertical silicon nanowire arrays
DOI:10.1063/1.4764057 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Khorasaninejad, M.;Dhindsa, N.;Walia, J.;Patchett, S.;Saini, S. S.;
12:12:40 Enhanced absorption of solar light in Ge/Si core-sheath nanowires compared to Si/Ge core-sheath and Si1-xGex nanowires: A theoretical study
DOI:10.1063/1.4846755 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kallel, Houssem;Chehaidar, Abdallah;Arbouet, Arnaud;Paillard, Vincent;
12:12:41 Enhanced first-order Raman scattering from arrays of vertical silicon nanowires
DOI:10.1088/0957-4484/23/27/275706 JN:NANOTECHNOLOGY PY:2012
TC:15 AU: Khorasaninejad, M.;Walia, J.;Saini, S. S.;
12:12:42 Statistical model on the optical properties of silicon nanowire mats
DOI:10.1103/PhysRevB.84.125432 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Broenstrup, Gerald;Garwe, Frank;Csaki, Andrea;Fritzsche, Wolfgang;Steinbrueck, Andrea;Christiansen, Silke;
12:12:43 Polarization-dependent light extinction in ensembles of polydisperse vertical semiconductor nanowires: A Mie scattering effective medium
DOI:10.1103/PhysRevB.86.045305 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Grzela, Grzegorz;Hourlier, Djamila;Rivas, Jaime Gomez;
12:12:44 Photoluminescence enhancement of silicon nanocrystals placed in the near field of a silicon nanowire
DOI:10.1103/PhysRevB.88.081302 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Kallel, Houssem;Arbouet, Arnaud;Carrada, Marzia;Ben Assayag, Gerard;Chehaidar, Abdallah;Periwal, Priyanka;Baron, Thierry;Normand, Pascal;Paillard, Vincent;
12:12:45 Measurement of light diffusion in ZnO nanowire forests
DOI:10.1063/1.3692741 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Versteegh, Marijn A. M.;van der Wel, Ruben E. C.;Dijkhuis, Jaap I.;
12:12:46 Direct and quantitative photothermal absorption spectroscopy of individual particulates
DOI:10.1063/1.4858387 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Tong, Jonathan K.;Hsu, Wei-Chun;Han, Sang Eon;Burg, Brian R.;Zheng, Ruiting;Shen, Sheng;Chen, Gang;
12:12:47 Redesigning Photodetector Electrodes as an Optical Antenna
DOI:10.1021/nl303535s JN:NANO LETTERS PY:2013
TC:20 AU: Fan, Pengyu;Huang, Kevin C. Y.;Cao, Linyou;Brongersma, Mark L.;
12:12:48 Fabrication of Sub-25 nm Diameter GaSb Nanopillar Arrays by Nanoscale Self-Mask Effect
DOI:10.1021/acs.nanolett.5b00967 JN:NANO LETTERS PY:2015
TC:0 AU: Lin, Tzuging;Ramadurgam, Sarath;Liao, Chien-Sheng;Zi, Yunlong;Yang, Chen;
12:12:49 Doubling Absorption in Nanowire Solar Cells with Dielectric Shell Optical Antennas
DOI:10.1021/nl504462e JN:NANO LETTERS PY:2015
TC:3 AU: Kim, Sun-Kyung;Zhang, Xing;Hill, David J.;Song, Kyung-Deok;Park, Jin-Sung;Park, Hong-Gyu;Cahoon, James F.;
12:12:50 Fundamental limits in the external quantum efficiency of single nanowire solar cells
DOI:10.1063/1.3672168 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Heiss, Martin;Fontcuberta i Morral, Anna;
12:12:51 Optical absorption in c-Si/a-Si:H core/shell nanowire arrays for photovoltaic applications
DOI:10.1063/1.3615297 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Xie, W. Q.;Liu, W. F.;Oh, J. I.;Shen, W. Z.;
12:12:52 Bunching characteristics of silicon nanowire arrays
DOI:10.1063/1.3688025 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:19 AU: Khorasaninejad, Mohammadreza;Abedzadeh, Navid;Jawanda, Ajayinder Singh;Nixon, O.;Anantram, M. P.;Saini, Simarjeet Singh;
12:12:53 Light absorption mechanism in single c-Si (core)/a-Si (shell) coaxial nanowires
DOI:10.1088/0957-4484/22/12/125705 JN:NANOTECHNOLOGY PY:2011
TC:16 AU: Liu, W. F.;Oh, J. I.;Shen, W. Z.;
12:12:54 Optical Fano resonance of an individual semiconductor nanostructure
DOI:10.1038/NMAT3927 JN:NATURE MATERIALS PY:2014
TC:15 AU: Fan, Pengyu;Yu, Zongfu;Fan, Shanhui;Brongersma, Mark L.;
12:12:55 Deep-Subwavelength Semiconductor Nanowire Surface Plasmon Polariton Couplers
DOI:10.1021/nl402980j JN:NANO LETTERS PY:2014
TC:4 AU: Landreman, Patrick E.;Brongersma, Mark L.;
12:12:56 Multiple Structural Coloring of Silk-Fibroin Photonic Crystals and Humidity-Responsive Color Sensing
DOI:10.1002/adfm.201203672 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:12 AU: Diao, Ying Ying;Liu, Xiang Yang;Toh, Guoyang William;Shi, Lei;Zi, Jian;
12:12:57 Adding colors to polydimethylsiloxane by embedding vertical silicon nanowires
DOI:10.1063/1.4766944 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Park, Hyunsung;Seo, Kwanyong;Crozier, Kenneth B.;
12:12:58 An investigation of the optical properties of disordered silicon nanowire mats
DOI:10.1063/1.4768913 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Bao, Hua;Zhang, Weixia;Chen, Liangliang;Huang, Haoxiang;Yang, Chen;Ruan, Xiulin;
12:12:59 Semiconductor/dielectric half-coaxial nanowire arrays for large-area nanostructured photovoltaics
DOI:10.1063/1.4869915 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Hua, X.;Zeng, Y.;Shen, W. Z.;
12:12:60 Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars
DOI:10.1088/0957-4484/25/5/055204 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Wu, Zilong;Lei, Hui;Zhou, Tong;Fan, Yongliang;Zhong, Zhenyang;
12:12:61 Observation of Surface Plasmon Polariton Pumping of Optical Eigenmodes of Gold-Decorated Gallium Nitride Nanowires
DOI:10.1021/nl3022219 JN:NANO LETTERS PY:2012
TC:2 AU: Sundararajan, Jency Pricilla;Bakharev, Pavel;Niraula, Ishwar;Kengne, Blaise Alexis Fouetio;MacPherson, Quinn;Sargent, Meredith;Hare, Brian;McIlroy, David N.;
12:12:62 Color Generation and Refractive Index Sensing Using Diffraction from 2D Silicon Nanowire Arrays
DOI:10.1002/smll.201300601 JN:SMALL PY:2014
TC:8 AU: Walia, Jaspreet;Dhindsa, Navneet;Khorasaninejad, Mohammadreza;Saini, Simarjeet Singh;
12:12:63 Enhanced Raman scattering from sub-wavelength silicon gratings
DOI:10.1063/1.4825377 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Khorasaninejad, M.;Walia, J.;Saini, S. S.;
12:12:64 Vertical germanium nanowires as spectrally-selective absorbers across the visible-to-infrared
DOI:10.1063/1.4901438 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Solanki, Amit;Crozier, Kenneth;
12:12:65 Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films
DOI:10.1021/nl102199b JN:NANO LETTERS PY:2010
TC:11 AU: Tham, Douglas;Heath, James R.;
12:12:66 Absorption enhancement in silicon nanowire-optical nanoantenna system for photovoltaic applications
DOI:10.1016/j.optmat.2014.05.007 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Robak, Elzbieta;Grzeskiewicz, Bartlomiej;Kotkowiak, Michal;
12:12:67 Extraordinary All-Dielectric Light Enhancement over Large Volumes
DOI:10.1021/nl102270p JN:NANO LETTERS PY:2010
TC:10 AU: Sainidou, Rebecca;Renger, Jan;Teperik, Tatiana V.;Gonzalez, Maria U.;Quidant, Romain;Javier Garcia de Abajo, F.;
12:12:68 Applying contact to individual silicon nanowires using a dielectrophoresis (DEP)-based technique
DOI:10.1007/s11051-013-1628-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Leiterer, Christian;Broenstrup, Gerald;Jahr, Norbert;Urban, Matthias;Arnold, Cornelia;Christiansen, Silke;Fritzsche, Wolfgang;
12:12:69 Fabrication of transferrable, fully suspended silicon photonic crystal nanomembranes exhibiting vivid structural color and high-Q guided resonance
DOI:10.1116/1.4819297 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Lin, Chenxi;Martinez, Luis Javier;Povinelli, Michelle L.;
12:12:70 Reconfigurable Imaging Systems Using Elliptical Nanowires
DOI:10.1021/nl202324s JN:NANO LETTERS PY:2011
TC:7 AU: Schonbrun, Ethan;Seo, Kwanyong;Crozier, Kenneth B.;
12:12:71 Strong modification of the reflection from birefringent layers of semiconductor nanowires by nanoshells
DOI:10.1063/1.3662393 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Diedenhofen, S. L.;Algra, R. E.;Bakkers, E. P. A. M.;Rivas, Jaime Gomez;
12:12:72 Silicon nanowire photodetector enhanced by a bow-tie antenna
DOI:10.1007/s00339-013-8070-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Felic, Gordana Klaric;Al-Dirini, Feras;Hossain, Faruque M.;Thanh Cong Nguyen;Skafidas, Efstratios;
12:12:73 Plasmonic versus dielectric enhancement in thin-film solar cells
DOI:10.1063/1.4719203 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Duhring, Maria B.;Mortensen, N. Asger;Sigmund, Ole;
12:12:74 Giant optical field enhancement in multi-dielectric stacks by photon scanning tunneling microscopy
DOI:10.1063/1.4822093 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Ndiaye, C.;Zerrad, M.;Lereu, A. L.;Roche, R.;Dumas, Ph.;Lemarchand, F.;Amra, C.;
12:12:75 Optical Properties of Crystalline-Amorphous Core-Shell Silicon Nanowires (vol 10, pg 4093, 2010)
DOI:10.1021/nl1036275 JN:NANO LETTERS PY:2010
TC:1 AU: Adachi, M. M.;Anantram, M. P.;Karim, K. S.;
12:12:76 Nanowire Antenna Emission (Vol 12, Pg 5481, 2012)
DOI:10.1021/nl404157p JN:NANO LETTERS PY:2013
TC:0 AU: Grzela, Grzegorz;Paniagua-Dominguez, Ramon;Barten, Tommy;Fontana, Yannik;Sanchez-Gil, Jose A.;Rivas, Jaime Gomez;
12:13:1 Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
DOI:10.1088/0957-4484/23/9/095702 JN:NANOTECHNOLOGY PY:2012
TC:48 AU: Xu, Tao;Dick, Kimberly A.;Plissard, Sebastien;Thanh Hai Nguyen;Makoudi, Younes;Berthe, Maxime;Nys, Jean-Philippe;Wallart, Xavier;Grandidier, Bruno;Caroff, Philippe;
12:13:2 Synthesis and properties of antimonide nanowires
DOI:10.1088/0957-4484/24/20/202001 JN:NANOTECHNOLOGY PY:2013
TC:18 AU: Borg, B. Mattias;Wernersson, Lars-Erik;
12:13:3 The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors
DOI:10.1088/0957-4484/21/20/205703 JN:NANOTECHNOLOGY PY:2010
TC:48 AU: Thelander, C.;Dick, K. A.;Borgstrom, M. T.;Froberg, L. E.;Caroff, P.;Nilsson, H. A.;Samuelson, L.;
12:13:4 InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
DOI:10.1021/nl102145h JN:NANO LETTERS PY:2010
TC:60 AU: Borg, B. Mattias;Dick, Kimberly A.;Ganjipour, Bahram;Pistol, Mats-Erik;Wernersson, Lars-Erik;Thelander, Claes;
12:13:5 High-Performance Single Nanowire Tunnel Diodes
DOI:10.1021/nl903941b JN:NANO LETTERS PY:2010
TC:51 AU: Wallentin, Jesper;Persson, Johan M.;Wagner, Jakob B.;Samuelson, Lars;Deppert, Knut;Borgstrom, Magnus T.;
12:13:6 From InSb Nanowires to Nanocubes: Looking for the Sweet Spot
DOI:10.1021/nl203846g JN:NANO LETTERS PY:2012
TC:39 AU: Plissard, Sebastien R.;Slapak, Dorris R.;Verheijen, Marcel A.;Hocevar, Moira;Immink, George W. G.;van Weperen, Ilse;Nadj-Perge, Stevan;Frolov, Sergey M.;Kouwenhoven, Leo P.;Bakkers, Erik P. A. M.;
12:13:7 Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
DOI:10.1021/nl5001554 JN:NANO LETTERS PY:2014
TC:12 AU: Sourribes, Marion J. L.;Isakov, Ivan;Panfilova, Marina;Liu, Huiyun;Warburton, Paul A.;
12:13:8 Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
DOI:10.1021/acs.nanolett.5b00282 JN:NANO LETTERS PY:2015
TC:0 AU: Webb, James L.;Knutsson, Johan;Hjort, Martin;Ghalamestani, Sepideh Gorji;Dick, Kimberly A.;Timm, Rainer;Mikkelsen, Anders;
12:13:9 Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
DOI:10.1021/acs.nanolett.5b00411 JN:NANO LETTERS PY:2015
TC:0 AU: Anyebe, E. A.;Sanchez, A. M.;Hindmarsh, S.;Chen, X.;Shao, J.;Rajpalke, M. K.;Veal, T. D.;Robinson, B. J.;Kolosoy, O.;Anderson, F.;Sundaram, R.;Wang, Z. M.;Falko, V.;Zhuang, Q.;
12:13:10 Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy
DOI:10.1021/nl5040946 JN:NANO LETTERS PY:2015
TC:2 AU: Zhuang, Q. D.;Anyebe, Ezekiel A.;Chen, R.;Liu, H.;Sanchez, Ana M.;Rajpalke, Mohana K.;Veal, Tim D.;Wang, Z. M.;Huang, Y. Z.;Sun, H. D.;
12:13:11 Atomic Scale Strain Relaxation in Axial Semiconductor III-V Nanowire Heterostructures
DOI:10.1021/nl503273j JN:NANO LETTERS PY:2014
TC:5 AU: de la Mata, Maria;Magen, Cesar;Caroff, Philippe;Arbiol, Jordi;
12:13:12 Crystalline GaSb Nanowires Synthesized on Amorphous Substrates: From the Formation Mechanism to p-Channel Transistor Applications
DOI:10.1021/am403161t JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Yang, Zai-xing;Wang, Fengyun;Han, Ning;Lin, Hao;Cheung, Ho-Yuen;Fang, Ming;Yip, SenPo;Hung, TakFu;Wong, Chun-Yuen;Ho, Johnny C.;
12:13:13 High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
DOI:10.1021/nl202180b JN:NANO LETTERS PY:2011
TC:31 AU: Ganjipour, Bahram;Dey, Anil W.;Borg, B. Mattias;Ek, Martin;Pistol, Mats-Erik;Dick, Kimberly A.;Wernersson, Lars-Erik;Thelander, Claes;
12:13:14 Demonstration of Defect-Free and Composition Tunable GaxIn1-xSb Nanowires
DOI:10.1021/nl302497r JN:NANO LETTERS PY:2012
TC:14 AU: Ghalamestani, Sepideh Gorji;Ek, Martin;Ganjipour, Bahram;Thelander, Claes;Johansson, Jonas;Caroff, Philippe;Dick, Kimberly A.;
12:13:15 Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors
DOI:10.1021/nl303751d JN:NANO LETTERS PY:2013
TC:30 AU: Svensson, Johannes;Anttu, Nicklas;Vainorius, Neimantas;Borg, B. Mattias;Wernersson, Lars-Erik;
12:13:16 Temperature dependent properties of InSb and InAs nanowire field-effect transistors
DOI:10.1063/1.3402760 JN:APPLIED PHYSICS LETTERS PY:2010
TC:33 AU: Nilsson, Henrik A.;Caroff, Philippe;Thelander, Claes;Lind, Erik;Karlstrom, Olov;Wernersson, Lars-Erik;
12:13:17 Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures
DOI:10.1021/nn400684p JN:ACS NANO PY:2013
TC:13 AU: Ek, Martin;Borg, B. Mattias;Johansson, Jonas;Dick, Kimberly A.;
12:13:18 Crystal structure control in Au-free self-seeded InSb wire growth
DOI:10.1088/0957-4484/22/14/145603 JN:NANOTECHNOLOGY PY:2011
TC:27 AU: Mandl, Bernhard;Dick, Kimberly A.;Kriegner, Dominik;Keplinger, Mario;Bauer, Guenther;Stangl, Julian;Deppert, Knut;
12:13:19 Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3566980 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Borg, B. Mattias;Dick, Kimberly A.;Eymery, Joel;Wernersson, Lars-Erik;
12:13:20 The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.03.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Du, Wen-Na;Yang, Xiao-Guang;Wang, Xiao-Ye;Pan, Hua-Yong;Ji, Hai-Ming;Luo, Shuai;Yang, Tao;Wang, Zhan-Guo;
12:13:21 Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients
DOI:10.1021/acs.nanolett.5b00089 JN:NANO LETTERS PY:2015
TC:0 AU: Huh, Junghwan;Yun, Hoyeol;Kim, Dong-Chul;Munshi, A. Mazid;Dheeraj, Dasa L.;Kauko, Hanne;van Helvoort, Antonius T. J.;Lee, SangWook;Fimland, Bjorn-Ove;Weman, Helge;
12:13:22 Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
DOI:10.1063/1.4726037 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Thelander, Claes;Caroff, Philippe;Plissard, Sebastien;Dick, Kimberly A.;
12:13:23 Self-catalyzed vapor-liquid-solid growth of InP1-xSbx nanostructures
DOI:10.1016/j.jcrysgro.2011.01.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Zhou, Hailong;Pozuelo, Marta;Hicks, Robert F.;Kodambaka, Suneel;
12:13:24 Self-catalysed InAs1-xSbx nanowires grown directly on bare Si substrates
DOI:10.1016/j.materresbull.2014.09.028 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Anyebe, E. A.;Zhuang, Q.;
12:13:25 Growth of InAs/InAsSb heterostructured nanowires
DOI:10.1088/0957-4484/23/11/115606 JN:NANOTECHNOLOGY PY:2012
TC:14 AU: Ercolani, Daniele;Gemmi, Mauro;Nasi, Lucia;Rossi, Francesca;Pea, Marialilia;Li, Ang;Salviati, Giancarlo;Beltram, Fabio;Sorba, Lucia;
12:13:26 Effect of precursor flux on compositional evolution in InP1-xSbx nanowires grown via self-catalyzed vapor-liquid-solid process
DOI:10.1016/j.jcrysgro.2011.09.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Ngo, Chilan;Zhou, Hailong;Mecklenburg, Matthew;Pozuelo, Marta;Regan, B. C.;Xiao, Q. F.;Shenoy, V. B.;Hicks, R. F.;Kodambaka, S.;
12:13:27 Field effect transistor based on single crystalline InSb nanowire
DOI:10.1039/c0jm03855e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:20 AU: Wang, Yennai;Chi, Junhong;Banerjee, Karan;Gruetzmacher, Detlev;Schaepers, Thomas;Lu, Jia G.;
12:13:28 Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy
DOI:10.1088/0957-4484/23/9/095602 JN:NANOTECHNOLOGY PY:2012
TC:12 AU: Lugani, L.;Ercolani, D.;Sorba, L.;Sibirev, N. V.;Timofeeva, M. A.;Dubrovskii, V. G.;
12:13:29 Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
DOI:10.1021/nn204838m JN:ACS NANO PY:2012
TC:17 AU: Ganjipour, Bahram;Wallentin, Jesper;Borgstrom, Magnus T.;Samuelson, Lars;Thelander, Claes;
12:13:30 Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
DOI:10.1063/1.4739082 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Borg, B. Mattias;Ek, Martin;Ganjipour, Bahram;Dey, Anil W.;Dick, Kimberly A.;Wernersson, Lars-Erik;Thelander, Claes;
12:13:31 Self-catalyzed growth of InP/InSb axial nanowire heterostructures
DOI:10.1016/j.jcrysgro.2011.06.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Pozuelo, Marta;Zhou, Hailong;Lin, Stanley;Lipman, Scott A.;Goorsky, Mark S.;Hicks, Robert F.;Kodambaka, Suneel;
12:13:32 Growth and Characterization of Unintentionally Doped GaSb Nanowires
DOI:10.1007/s11664-010-1140-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:21 AU: Burke, Robert A.;Weng, Xiaojun;Kuo, Meng-Wei;Song, Young-Wook;Itsuno, Anne M.;Mayer, Theresa S.;Durbin, Steven M.;Reeves, Roger J.;Redwing, Joan M.;
12:13:33 Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors
DOI:10.1021/nl4029494 JN:NANO LETTERS PY:2013
TC:18 AU: Dey, Anil W.;Svensson, Johannes;Ek, Martin;Lind, Erik;Thelander, Claes;Wernersson, Lars-Erik;
12:13:34 Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires
DOI:10.1021/nn303107g JN:ACS NANO PY:2012
TC:13 AU: Hjort, Martin;Wallentin, Jesper;Timm, Rainer;Zakharov, Alexei A.;Hakanson, Ulf;Andersen, Jesper N.;Lundgren, Edvin;Samuelson, Lars;Borgstrom, Magnus T.;Mikkelsen, Anders;
12:13:35 Room temperature device performance of electrodeposited InSb nanowire field effect transistors
DOI:10.1063/1.3587638 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Das, Suprem R.;Delker, Collin J.;Zakharov, Dmitri;Chen, Yong P.;Sands, Timothy D.;Janes, David B.;
12:13:36 Charge transport and trap characterization in individual GaSb nanowires
DOI:10.1063/1.4720080 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Xu, Wei;Chin, Alan;Ye, Laura;Ning, C. Z.;Yu, Hongbin;
12:13:37 Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors
DOI:10.1016/j.matchemphys.2010.01.056 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:13 AU: Paul, Rajat Kanti;Penchev, Miroslav;Zhong, Jiebin;Ozkan, Mihrimah;Ghazinejad, Maziar;Jing, Xiaoye;Yengel, Emre;Ozkan, Cengiz S.;
12:13:38 In situ doping of catalyst-free InAs nanowires
DOI:10.1088/0957-4484/23/50/505708 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Ghoneim, Hesham;Mensch, Philipp;Schmid, Heinz;Bessire, Cedric D.;Rhyner, Reto;Schenk, Andreas;Rettner, Charles;Karg, Siegfried;Moselund, Kirsten E.;Riel, Heike;Bjoerk, Mikael T.;
12:13:39 Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit
DOI:10.1021/nl104032s JN:NANO LETTERS PY:2011
TC:9 AU: Storm, Kristian;Nylund, Gustav;Borgstrom, Magnus;Wallentin, Jesper;Fasth, Carina;Thelander, Claes;Samuelson, Lars;
12:13:40 Ag-assisted CBE growth of ordered InSb nanowire arrays
DOI:10.1088/0957-4484/22/1/015605 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Vogel, Alexander T.;de Boor, Johannes;Becker, Michael;Wittemann, Joerg V.;Mensah, Samuel L.;Werner, Peter;Schmidt, Volker;
12:13:41 Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation
DOI:10.1021/acs.nanolett.5b00898 JN:NANO LETTERS PY:2015
TC:1 AU: Persson, Olof;Webb, James L.;Dick, Kimberly A.;Thelander, Claes;Mikkelsen, Anders;Timm, Rainer;
12:13:42 GaSb nanowire single-hole transistor
DOI:10.1063/1.3673328 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Ganjipour, Bahram;Nilsson, Henrik A.;Borg, B. Mattias;Wernersson, Lars-Erik;Samuelson, Lars;Xu, H. Q.;Thelander, Claes;
12:13:43 Room temperature detection of NO2 using in InSb nanowire
DOI:10.1063/1.3614544 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Paul, Rajat Kanti;Badhulika, Sushmee;Mulchandani, Ashok;
12:13:44 Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
DOI:10.1063/1.4749283 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Ganjipour, Bahram;Ek, Martin;Borg, B. Mattias;Dick, Kimberly A.;Pistol, Mats-Erik;Wernersson, Lars-Erik;Thelander, Claes;
12:13:45 Zincblende to wurtzite transition during the self-catalyzed growth of InP nanostructures
DOI:10.1016/j.jcrysgro.2010.05.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Pozuelo, M.;Prikhodko, S. V.;Grantab, R.;Zhou, H.;Gao, L.;Sitzman, S. D.;Gambin, V.;Shenoy, V. B.;Hicks, R. F.;Kodambaka, S.;
12:13:46 Suppression of lateral growth in InAs/InAsSb heterostructured nanowires
DOI:10.1016/j.jcrysgro.2012.12.143 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Pea, M.;Ercolani, D.;Li, A.;Gemmi, M.;Rossi, F.;Beltram, F.;Sorba, L.;
12:13:47 Electronic structure of InAs/GaSb core-shell nanowires
DOI:10.1103/PhysRevB.86.165439 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Kishore, V. V. Ravi;Partoens, B.;Peeters, F. M.;
12:13:48 Phase coherent transport in InSb nanowires
DOI:10.1063/1.4747200 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Yao, Huijun;Guenel, Haci Yusuf;Bloemers, Christian;Weis, Karl;Chi, Junhong;Lu, Jia Grace;Liu, Jie;Gruetzmacher, Detlev;Schaepers, Thomas;
12:13:49 Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions
DOI:10.1063/1.4795123 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Shik, A.;Chen, C. Y.;Pitanti, A.;Tredicucci, A.;Ercolani, D.;Sorba, L.;Beltram, F.;Ruda, H. E.;
12:13:50 Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors
DOI:10.1021/nl302684s JN:NANO LETTERS PY:2012
TC:11 AU: Zhao, Yanjie;Candebat, Drew;Delker, Collin;Zi, Yunlong;Janes, David;Appenzeller, Joerg;Yang, Chen;
12:13:51 Lithography-Free Fabrication of Core Shell GaAs Nanowire Tunnel Diodes
DOI:10.1021/acs.nanolett.5b01795 JN:NANO LETTERS PY:2015
TC:0 AU: Darbandi, A.;Kavanagh, K. L.;Watkins, S. P.;
12:13:52 Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
DOI:10.1063/1.3662009 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Borg, B. Mattias;Ek, Martin;Dick, Kimberly A.;Ganjipour, Bahram;Dey, Anil W.;Thelander, Claes;Wernersson, Lars-Erik;
12:13:53 Growth mechanism of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy
DOI:10.1016/j.jcrysgro.2010.10.157 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Lugani, Lorenzo;Ercolani, Daniele;Beltram, Fabio;Sorba, Lucia;
12:13:54 Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
DOI:10.1063/1.3633742 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Nilsson, Henrik A.;Caroff, Philippe;Lind, Erik;Pistol, Mats-Erik;Thelander, Claes;Wernersson, Lars-Erik;
12:13:55 Effect of reactor pressure on catalyst composition and growth of GaSb nanowires
DOI:10.1016/j.jcrysgro.2009.11.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Weng, Xiaojun;Burke, Robert A.;Dickey, Elizabeth C.;Redwing, Joan M.;
12:13:56 InAs nanowires with AlxGa1-xSb shells for band alignment engineering
DOI:10.1016/j.jcrysgro.2015.03.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Rieger, Torsten;Gruetzmacher, Detlev;Lepsa, Mihail Ion;
12:13:57 Template-assisted electrodeposition of indium-antimony nanowires - Comparison of electrochemical methods
DOI:10.1016/j.apsusc.2013.09.135 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Hnida, Katarzyna;Mech, Justyna;Sulka, Grzegorz D.;
12:13:58 Electron beam induced current in InSb-InAs nanowire type-III heterostructures
DOI:10.1063/1.4745603 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Chen, C. Y.;Shik, A.;Pitanti, A.;Tredicucci, A.;Ercolani, D.;Sorba, L.;Beltram, F.;Ruda, H. E.;
12:13:59 Defect formation in InSb nanowires and its effect on stoichiometry and carrier transport
DOI:10.1007/s11051-013-2129-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Philipose, U.;Sapkota, Gopal;
12:13:60 Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.11.125 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Babu, J. Bubesh;Yoh, Kanji;
12:13:61 Self-catalyzed vapor-liquid-solid growth of InP/InAsP core-shell nanopillars
DOI:10.1016/j.jcrysgro.2010.11.092 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Evoen, Vanessa;Zhou, Hailong;Gao, Li;Pozuelo, Marta;Liang, Baolai;Tatebeyashi, Jun;Kodambaka, Suneel;Huffaker, Diana L.;Hicks, Robert F.;
12:13:62 Modeling hydrogen permeation through a thin titanium oxide film and palladium
DOI:10.1016/j.tsf.2013.02.030 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Qin, Z.;Zeng, Y.;Shoesmith, D. W.;
12:14:1:1 All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation
DOI:10.1103/PhysRevB.81.155202 JN:PHYSICAL REVIEW B PY:2010
TC:32 AU: Ishii, Ryota;Kaneta, Akio;Funato, Mitsuru;Kawakami, Yoichi;Yamaguchi, Atsushi A.;
12:14:1:2 Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
DOI:10.1103/PhysRevB.83.195202 JN:PHYSICAL REVIEW B PY:2011
TC:20 AU: Rossbach, Georg;Feneberg, Martin;Roeppischer, Marcus;Werner, Christoph;Esser, Norbert;Cobet, Christoph;Meisch, Tobias;Thonke, Klaus;Dadgar, Armin;Blaesing, Juergen;Krost, Alois;Goldhahn, Ruediger;
12:14:1:3 Anisotropic absorption and emission of bulk (1(1)over-bar00) AlN
DOI:10.1103/PhysRevB.87.235209 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Feneberg, Martin;Romero, Maria Fatima;Roeppischer, Marcus;Cobet, Christoph;Esser, Norbert;Neuschl, Benjamin;Thonke, Klaus;Bickermann, Matthias;Goldhahn, Ruediger;
12:14:1:4 Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress
DOI:10.1103/PhysRevB.87.235201 JN:PHYSICAL REVIEW B PY:2013
TC:5 AU: Ishii, Ryota;Kaneta, Akio;Funato, Mitsuru;Kawakami, Yoichi;
12:14:1:5 High-excitation and high-resolution photoluminescence spectra of bulk AlN
DOI:10.1103/PhysRevB.82.075208 JN:PHYSICAL REVIEW B PY:2010
TC:30 AU: Feneberg, Martin;Leute, Robert A. R.;Neuschl, Benjamin;Thonke, Klaus;Bickermann, Matthias;
12:14:1:6 Composition dependent valence band order in c-oriented wurtzite AlGaN layers
DOI:10.1063/1.4895995 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Neuschl, B.;Helbing, J.;Knab, M.;Lauer, H.;Madel, M.;Thonke, K.;Meisch, T.;Forghani, K.;Scholz, F.;Feneberg, M.;
12:14:1:7 Negative spin-exchange splitting in the exciton fine structure of AlN
DOI:10.1063/1.4790645 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Feneberg, Martin;Romero, Maria Fatima;Neuschl, Benjamin;Thonke, Klaus;Roeppischer, Marcus;Cobet, Christoph;Esser, Norbert;Bickermann, Matthias;Goldhahn, Ruediger;
12:14:1:8 Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
DOI:10.1063/1.4821183 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Neuschl, B.;Thonke, K.;Feneberg, M.;Goldhahn, R.;Wunderer, T.;Yang, Z.;Johnson, N. M.;Xie, J.;Mita, S.;Rice, A.;Collazo, R.;Sitar, Z.;
12:14:1:9 Excitonic recombination in epitaxial lateral overgrown AIN on sapphire
DOI:10.1063/1.4833246 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Reich, Christoph;Feneberg, Martin;Kueller, Viola;Knauer, Arne;Wernicke, Tim;Schlegel, Jessica;Frentrup, Martin;Goldhahn, Ruediger;Weyers, Markus;Kneissl, Michael;
12:14:1:10 Huge electron-hole exchange interaction in aluminum nitride
DOI:10.1103/PhysRevB.87.161204 JN:PHYSICAL REVIEW B PY:2013
TC:7 AU: Ishii, Ryota;Funato, Mitsuru;Kawakami, Yoichi;
12:14:1:11 Optical properties of magnesium doped AlxGa1-xN (0.61 <= x <= 0.73)
DOI:10.1063/1.4897449 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Feneberg, Martin;Osterburg, Sarah;Romero, Maria Fatima;Garke, Bernd;Goldhahn, Ruediger;Neumann, Maciej D.;Esser, Norbert;Yan, Jianchang;Zeng, Jianping;Wang, Junxi;Li, Jinmin;
12:14:1:12 Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
DOI:10.1016/j.tsf.2013.10.092 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Feneberg, Martin;Romero, Maria Fatima;Neuschl, Benjamin;Thonke, Klaus;Roeppischer, Marcus;Cobet, Christoph;Esser, Norbert;Bickermann, Matthias;Goldhahn, Ruediger;
12:14:1:13 Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties
DOI:10.1016/j.jcrysgro.2011.11.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:13 AU: Bickermann, Matthias;Filip, Octavian;Epelbaum, Boris M.;Heimann, Paul;Feneberg, Martin;Neuschl, Benjamin;Thonke, Klaus;Wedler, Elke;Winnacker, Albrecht;
12:14:1:14 Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
DOI:10.1063/1.3610469 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Feneberg, Martin;Roeppischer, Marcus;Esser, Norbert;Cobet, Christoph;Neuschl, Benjamin;Meisch, Tobias;Thonke, Klaus;Goldhahn, Ruediger;
12:14:1:15 Crystal growth of mixed AlN-SiC bulk crystals
DOI:10.1016/j.jcrysgro.2010.04.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Filip, Octavian;Bickermann, Matthias;Epelbaum, Boris M.;Heimann, Paul;Winnacker, Albrecht;
12:14:2:1 Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
DOI:10.1063/1.3467522 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:51 AU: Rice, A.;Collazo, R.;Tweedie, J.;Dalmau, R.;Mita, S.;Xie, J.;Sitar, Z.;
12:14:2:2 Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
DOI:10.1063/1.4803689 JN:APPLIED PHYSICS LETTERS PY:2013
TC:20 AU: Xie, Jinqiao;Mita, Seiji;Bryan, Zachary;Guo, Wei;Hussey, Lindsay;Moody, Baxter;Schlesser, Raoul;Kirste, Ronny;Gerhold, Michael;Collazo, Ramon;Sitar, Zlatko;
12:14:2:3 Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
DOI:10.1063/1.4870284 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Bryan, Zachary;Bryan, Isaac;Bobea, Milena;Hussey, Lindsay;Kirste, Ronny;Sitar, Zlatko;Collazo, Ramon;
12:14:2:4 Sub-250 nm light emission and optical gain in AlGaN materials
DOI:10.1063/1.4772615 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Pecora, Emanuele Francesco;Zhang, Wei;Nikiforov, A. Yu.;Yin, Jian;Paiella, Roberto;Dal Negro, Luca;Moustakas, Theodore D.;
12:14:2:5 Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
DOI:10.1063/1.4868678 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:9 AU: Guo, Wei;Bryan, Zachary;Xie, Jinqiao;Kirste, Ronny;Mita, Seiji;Bryan, Isaac;Hussey, Lindsay;Bobea, Milena;Haidet, Brian;Gerhold, Michael;Collazo, Ramon;Sitar, Zlatko;
12:14:2:6 The effect of polarity and surface states on the Fermi level at III-nitride surfaces
DOI:10.1063/1.4896377 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Reddy, Pramod;Bryan, Isaac;Bryan, Zachary;Guo, Wei;Hussey, Lindsay;Collazo, Ramon;Sitar, Zlatko;
12:14:2:7 Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
DOI:10.1063/1.4795719 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Lochner, Zachary;Kao, Tsung-Ting;Liu, Yuh-Shiuan;Li, Xiao-Hang;Satter, Md. Mahbub;Shen, Shyh-Chiang;Yoder, P. Douglas;Ryou, Jae-Hyun;Dupuis, Russell D.;Wei, Yong;Xie, Hongen;Fischer, Alec;Ponce, Fernando A.;
12:14:2:8 Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
DOI:10.1063/1.4897527 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Li, Xiao-Hang;Detchprohm, Theeradetch;Kao, Tsung-Ting;Satter, Md. Mahbub;Shen, Shyh-Chiang;Yoder, P. Douglas;Dupuis, Russell D.;Wang, Shuo;Wei, Yong O.;Xie, Hongen;Fischer, Alec M.;Ponce, Fernando A.;Wernicke, Tim;Reich, Christoph;Martens, Martin;Kneissl, Michael;
12:14:2:9 Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
DOI:10.1063/1.4792694 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Bryan, I.;Rice, A.;Hussey, L.;Bryan, Z.;Bobea, M.;Mita, S.;Xie, J.;Kirste, R.;Collazo, R.;Sitar, Z.;
12:14:2:10 Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
DOI:10.1063/1.4829477 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Kao, Tsung-Ting;Liu, Yuh-Shiuan;Satter, Md. Mahbub;Li, Xiao-Hang;Lochner, Zachary;Yoder, P. Douglas;Detchprohm, Theeradetch;Dupuis, Russell D.;Shen, Shyh-Chiang;Ryou, Jae-Hyun;Fischer, Alec M.;Wei, Yong;Xie, Hongen;Ponce, Fernando A.;
12:14:2:11 Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition
DOI:10.1063/1.4897233 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Bryan, Isaac;Bryan, Zachary;Bobea, Milena;Hussey, Lindsay;Kirste, Ronny;Collazo, Ramon;Sitar, Zlatko;
12:14:2:12 Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
DOI:10.1063/1.3688051 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Mickevicius, J.;Jurkevicius, J.;Kazlauskas, K.;Zukauskas, A.;Tamulaitis, G.;Shur, M. S.;Shatalov, M.;Yang, J.;Gaska, R.;
12:14:2:13 Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
DOI:10.1063/1.4903058 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bryan, Zachary;Bryan, Isaac;Gaddy, Benjamin E.;Reddy, Pramod;Hussey, Lindsay;Bobea, Milena;Guo, Wei;Hoffmann, Marc;Kirste, Ronny;Tweedie, James;Gerhold, Michael;Irving, Douglas L.;Sitar, Zlatko;Collazo, Ramon;
12:14:2:14 Optical gain characteristics in Al-rich AlGaN/AlN quantum wells
DOI:10.1063/1.4875592 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Oto, Takao;Banal, Ryan G.;Funato, Mitsuru;Kawakami, Yoichi;
12:14:2:15 Schottky contact formation on polar and non-polar AlN
DOI:10.1063/1.4901954 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Reddy, Pramod;Bryan, Isaac;Bryan, Zachary;Tweedie, James;Kirste, Ronny;Collazo, Ramon;Sitar, Zlatko;
12:14:2:16 In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2009.11.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Wu, Jie-Jun;Okuura, Kazuteru;Okumura, Kenta;Miyake, Hideto;Hiramatsu, Kazumasa;Chen, Zhitao;Egawa, Takashi;
12:14:2:17 Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
DOI:10.1007/s11664-012-2342-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:2 AU: Bryan, Zachary;Hoffmann, Marc;Tweedie, James;Kirste, Ronny;Callsen, Gordon;Bryan, Isaac;Rice, Anthony;Bobea, Milena;Mita, Seiji;Xie, Jinqiao;Sitar, Zlatko;Collazo, Ramon;
12:14:2:18 Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates
DOI:10.1116/1.4898694 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Asif, Fatima;Lachab, Mohamed;Coleman, Antwon;Ahmad, Iftikhar;Zhang, Bin;Adivarahan, Vinod;Khan, Asif;
12:14:2:19 Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN
DOI:10.1063/1.3554762 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Craft, H. S.;Rice, A. L.;Collazo, R.;Sitar, Z.;Maria, J. -P.;
12:14:3:1 Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
DOI:10.1063/1.3302466 JN:APPLIED PHYSICS LETTERS PY:2010
TC:40 AU: Sun, W.;Shatalov, M.;Deng, J.;Hu, X.;Yang, J.;Lunev, A.;Bilenko, Y.;Shur, M.;Gaska, R.;
12:14:3:2 Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
DOI:10.1063/1.3675451 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Northrup, J. E.;Chua, C. L.;Yang, Z.;Wunderer, T.;Kneissl, M.;Johnson, N. M.;Kolbe, T.;
12:14:3:3 Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
DOI:10.1063/1.3506585 JN:APPLIED PHYSICS LETTERS PY:2010
TC:37 AU: Kolbe, Tim;Knauer, Arne;Chua, Chris;Yang, Zhihong;Einfeldt, Sven;Vogt, Patrick;Johnson, Noble M.;Weyers, Markus;Kneissl, Michael;
12:14:3:4 Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells
DOI:10.1063/1.4737941 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Al Tahtamouni, T. M.;Lin, J. Y.;Jiang, H. X.;
12:14:3:5 Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers
DOI:10.1063/1.4770364 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Netzel, C.;Knauer, A.;Weyers, M.;
12:14:3:6 Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
DOI:10.1063/1.4809759 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Park, Seoung-Hwan;Shim, Jong-In;
12:14:3:7 Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
DOI:10.1063/1.4892974 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wierer, J. J., Jr.;Allerman, A. A.;Montano, I.;Moseley, M. W.;
12:14:3:8 Strain-driven light-polarization switching in deep ultraviolet nitride emitters
DOI:10.1103/PhysRevB.84.035305 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Sharma, T. K.;Naveh, D.;Towe, E.;
12:14:3:9 Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers
DOI:10.1063/1.4874739 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Wierer, J. J., Jr.;Montano, I.;Crawford, M. H.;Allerman, A. A.;
12:14:3:10 Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap
DOI:10.1063/1.4828667 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Chen, X. J.;Yu, T. J.;Lu, H. M.;Yuan, G. C.;Shen, B.;Zhang, G. Y.;
12:14:3:11 Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
DOI:10.1063/1.3672209 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kolbe, Tim;Knauer, Arne;Chua, Chris;Yang, Zhihong;Kueller, Viola;Einfeldt, Sven;Vogt, Patrick;Johnson, Noble M.;Weyers, Markus;Kneissl, Michael;
12:14:3:12 Homoepitaxial growth of AIN layers on freestanding AIN substrate by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.12.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Morishita, Tomohiro;Iwaya, Motoaki;Takeuchi, Tetsuya;Kamiyama, Satoshi;Akasaki, Isamu;
12:14:4:1 Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements
DOI:10.1063/1.4823826 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Chichibu, S. F.;Hazu, K.;Ishikawa, Y.;Tashiro, M.;Ohtomo, T.;Furusawa, K.;Uedono, A.;Mita, S.;Xie, J.;Collazo, R.;Sitar, Z.;
12:14:4:2 Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy
DOI:10.1063/1.4717955 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Chichibu, S. F.;Hazu, K.;Ishikawa, Y.;Tashiro, M.;Namita, H.;Nagao, S.;Fujito, K.;Uedono, A.;
12:14:4:3 Major impacts of point defects and impurities on the carrier recombination dynamics in AlN
DOI:10.1063/1.3517484 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Chichibu, S. F.;Onuma, T.;Hazu, K.;Uedono, A.;
12:14:4:4 Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy
DOI:10.1063/1.4807906 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Chichibu, S. F.;Miyake, H.;Ishikawa, Y.;Tashiro, M.;Ohtomo, T.;Furusawa, K.;Hazu, K.;Hiramatsu, K.;Uedono, A.;
12:14:4:5 Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions
DOI:10.1063/1.3615681 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Chichibu, S. F.;Hazu, K.;Onuma, T.;Uedono, A.;
12:14:4:6 Hydrostatic deformation potentials and the question of exciton binding energies and splittings in aluminium nitride
DOI:10.1103/PhysRevB.81.205201 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Gil, Bernard;
12:14:4:7 Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence
DOI:10.1063/1.4767357 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Ishikawa, Y.;Tashiro, M.;Hazu, K.;Furusawa, K.;Namita, H.;Nagao, S.;Fujito, K.;Chichibu, S. F.;
12:14:4:8 High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1-xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate
DOI:10.1063/1.4902315 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Chichibu, S. F.;Hazu, K.;Furusawa, K.;Ishikawa, Y.;Onuma, T.;Ohtomo, T.;Ikeda, H.;Fujito, K.;
12:14:4:9 Identification of extremely radiative nature of AlN by time-resolved photoluminescence
DOI:10.1063/1.3284653 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Onuma, T.;Hazu, K.;Uedono, A.;Sota, T.;Chichibu, S. F.;
12:14:4:10 Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun
DOI:10.1063/1.4817297 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Furusawa, K.;Ishikawa, Y.;Tashiro, M.;Hazu, K.;Nagao, S.;Ikeda, H.;Fujito, K.;Chichibu, S. F.;
12:14:4:11 Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane AlxGa1-xN epilayers
DOI:10.1116/1.3566010 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Hazu, K.;Kagaya, M.;Hoshi, T.;Onuma, T.;Chichibu, S. F.;
12:14:4:12 Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
DOI:10.1063/1.3607306 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Banal, Ryan G.;Funato, Mitsuru;Kawakami, Yoichi;
12:14:5:1 Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations
DOI:10.1063/1.3409121 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Yamaguchi, A. Atsushi;
12:14:5:2 Strong optical polarization in nonpolar (1(1)over-bar00) AlxGa1-xN/AlN quantum wells
DOI:10.1103/PhysRevB.87.041306 JN:PHYSICAL REVIEW B PY:2013
TC:8 AU: Funato, Mitsuru;Matsuda, Kazuhisa;Banal, Ryan G.;Ishii, Ryota;Kawakami, Yoichi;
12:14:5:3 Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
DOI:10.1063/1.4863964 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Netzel, Carsten;Stellmach, Joachim;Feneberg, Martin;Frentrup, Martin;Winkler, Michael;Mehnke, Frank;Wernicke, Tim;Goldhahn, Ruediger;Kneissl, Michael;Weyers, Markus;
12:14:5:4 Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
DOI:10.1063/1.4892429 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Banal, Ryan G.;Taniyasu, Yoshitaka;Yamamoto, Hideki;
12:14:5:5 Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode
DOI:10.1063/1.4742050 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Wang, Chang-Pei;Wu, Yuh-Renn;
12:14:5:6 Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes
DOI:10.1063/1.3627180 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Kojima, K.;Yamaguchi, A. A.;Funato, M.;Kawakami, Y.;Noda, S.;
12:14:5:7 High quality semipolar (1(1)over-bar02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
DOI:10.1063/1.4884897 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ichikawa, S.;Iwata, Y.;Funato, M.;Nagata, S.;Kawakami, Y.;
12:14:5:8 Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures
DOI:10.1063/1.3638693 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Park, Seoung-Hwan;
12:14:5:9 Ultraviolet emission efficiencies of AlxGa1-xN films pseudomorphically grown on AlyGa1-yN template (x < y) with various Al-content combinations
DOI:10.1016/j.tsf.2011.05.075 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Fu, D.;Zhang, R.;Wang, B. G.;Liu, B.;Xie, Z. L.;Xiu, X. Q.;Lu, H.;Zheng, Y. D.;Edwards, G.;
12:14:6:1 Silicon concentration dependence of optical polarization in AlGaN epitaxial layers
DOI:10.1063/1.3543631 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Murotani, Hideaki;Yamada, Yoichi;Miyake, Hideto;Hiramatsu, Kazumasa;
12:14:6:2 Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration
DOI:10.1063/1.4743016 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Kurai, Satoshi;Shimomura, Kazuhide;Murotani, Hideaki;Yamada, Yoichi;Miyake, Hideto;Hiramatsu, Kazumasa;
12:14:6:3 Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration
DOI:10.1063/1.4864020 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Kurai, Satoshi;Ushijima, Fumitaka;Miyake, Hideto;Hiramatsu, Kazumasa;Yamada, Yoichi;
12:14:6:4 Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
DOI:10.1063/1.4739431 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Murotani, Hideaki;Akase, Daiki;Anai, Koji;Yamada, Yoichi;Miyake, Hideto;Hiramatsu, Kazumasa;
12:14:6:5 Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency
DOI:10.1063/1.4904847 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kurai, Satoshi;Anai, Koji;Miyake, Hideto;Hiramatsu, Kazumasa;Yamada, Yoichi;
12:14:6:6 Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
DOI:10.1063/1.3675270 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Uedono, A.;Tenjinbayashi, K.;Tsutsui, T.;Shimahara, Y.;Miyake, H.;Hiramatsu, K.;Oshima, N.;Suzuki, R.;Ishibashi, S.;
12:14:6:7 Probing the relationship between structural and optical properties of Si-doped AlN
DOI:10.1063/1.3374444 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Pantha, B. N.;Sedhain, A.;Li, J.;Lin, J. Y.;Jiang, H. X.;
12:14:6:8 Huge binding energy of localized biexcitons in Al-rich AlxGa1-xN ternary alloys
DOI:10.1063/1.3559226 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kittaka, Ryo;Muto, Hirotaka;Murotani, Hideaki;Yamada, Yoichi;Miyake, Hideto;Hiramatsu, Kazumasa;
12:14:7:1 AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
DOI:10.1063/1.3559842 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Liao, Yitao;Thomidis, Christos;Kao, Chen-kai;Moustakasa, Theodore. D.;
12:14:7:2 Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
DOI:10.1063/1.3373834 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: Jmerik, V. N.;Mizerov, A. M.;Sitnikova, A. A.;Kop'ev, P. S.;Ivanov, S. V.;Lutsenko, E. V.;Tarasuk, N. P.;Rzheutskii, N. V.;Yablonskii, G. P.;
12:14:7:3 Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
DOI:10.1016/j.jcrysgro.2012.12.080 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Nechaev, D. V.;Aseev, P. A.;Jmerik, V. N.;Brunkov, P. N.;Kuznetsova, Y. V.;Sitnikova, A. A.;Ratnikov, V. V.;Ivanov, S. V.;
12:14:7:4 Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
DOI:10.1063/1.4738791 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Mickevicius, J.;Jurkevicius, J.;Kazlauskas, K.;Zukauskas, A.;Tamulaitis, G.;Shur, M. S.;Shatalov, M.;Yang, J.;Gaska, R.;
12:14:7:5 Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
DOI:10.1063/1.4822155 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Toropov, A. A.;Shevchenko, E. A.;Shubina, T. V.;Jmerik, V. N.;Nechaev, D. V.;Yagovkina, M. A.;Sitnikova, A. A.;Ivanov, S. V.;Pozina, G.;Bergman, J. P.;Monemar, B.;
12:14:7:6 Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring
DOI:10.1016/j.jcrysgro.2012.06.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:11 AU: Jmerik, V. N.;Mizerov, A. M.;Nechaev, D. V.;Aseev, P. A.;Sitnikova, A. A.;Troshkov, S. I.;Kop'ev, P. S.;Ivanov, S. V.;
12:14:7:7 A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
DOI:10.1016/j.jacrysgro.2015.02.104 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Makimoto, T.;Kumakura, K.;Maeda, M.;Yamamoto, H.;Horikoshi, Y.;
12:14:7:8 AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (vol 98, 081110, 2011)
DOI:10.1063/1.3675971 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Liao, Yitao;Thomidis, Christos;Kao, Chen-kai;Moustakas, Theodore D.;
12:14:8:1 On the origin of the 265 nm absorption band in AlN bulk crystals
DOI:10.1063/1.4717623 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Collazo, Ramon;Xie, Jinqiao;Gaddy, Benjamin E.;Bryan, Zachary;Kirste, Ronny;Hoffmann, Marc;Dalmau, Rafael;Moody, Baxter;Kumagai, Yoshinao;Nagashima, Toru;Kubota, Yuki;Kinoshita, Toru;Koukitu, Akinori;Irving, Douglas L.;Sitar, Zlatko;
12:14:8:2 The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
DOI:10.1063/1.4878657 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Gaddy, Benjamin E.;Bryan, Zachary;Bryan, Isaac;Xie, Jinqiao;Dalmau, Rafael;Moody, Baxter;Kumagai, Yoshinao;Nagashima, Toru;Kubota, Yuki;Kinoshita, Toru;Koukitu, Akinori;Kirste, Ronny;Sitar, Zlatko;Collazo, Ramon;Irving, Douglas L.;
12:14:8:3 Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
DOI:10.1063/1.4824731 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Gaddy, Benjamin E.;Bryan, Zachary;Bryan, Isaac;Kirste, Ronny;Xie, Jinqiao;Dalmau, Rafael;Moody, Baxter;Kumagai, Yoshinao;Nagashima, Toru;Kubota, Yuki;Kinoshita, Toru;Koukitu, Akinori;Sitar, Zlatko;Collazo, Ramon;Irving, Douglas L.;
12:14:8:4 Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN
DOI:10.1063/1.4723693 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Sedhain, A.;Lin, J. Y.;Jiang, H. X.;
12:14:8:5 Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
DOI:10.1063/1.4821848 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Irmscher, K.;Hartmann, C.;Guguschev, C.;Pietsch, M.;Wollweber, J.;Bickermann, M.;
12:14:8:6 C and Si codoping method for p-type AlN
DOI:10.1063/1.3475708 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Wu, Honglei;Zheng, Ruisheng;Liu, Wen;Meng, Shu;Huang, Junyi;
12:14:9:1 Light polarization characteristics of m-plane AlxGa1-xN films suffering from in-plane anisotropic tensile stresses
DOI:10.1063/1.3282705 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Hazu, K.;Hoshi, T.;Kagaya, M.;Onuma, T.;Chichibu, S. F.;
12:14:9:2 Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates
DOI:10.1063/1.3641876 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Ueno, Kohei;Kobayashi, Atsushi;Ohta, Jitsuo;Oshima, Masaharu;Fujioka, Hiroshi;
12:14:9:3 Impact of strain on deep ultraviolet nitride laser and light-emitting diodes
DOI:10.1063/1.3569835 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Sharma, T. K.;Towe, E.;
12:14:9:4 Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy
DOI:10.1063/1.3673325 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Xia, Y.;Brault, J.;Nemoz, M.;Teisseire, M.;Vinter, B.;Leroux, M.;Chauveau, J. -M.;
12:14:9:5 Dependence on composition of the optical polarization properties of m-plane InxGa1-xN commensurately grown on ZnO
DOI:10.1063/1.3624462 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Tamaki, Hiroaki;Kobayashi, Atsushi;Ohta, Jitsuo;Oshima, Masaharu;Fujioka, Hiroshi;
12:14:9:6 Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO
DOI:10.1063/1.4829478 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kobayashi, Atsushi;Ueno, Kohei;Ohta, Jitsuo;Oshima, Masaharu;Fujioka, Hiroshi;
12:14:9:7 Polarity replication across m-plane GaN/ZnO interfaces
DOI:10.1063/1.3659008 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kobayashi, Atsushi;Ohnishi, Tsuyoshi;Lippmaa, Mikk;Oda, Yasuhiro;Ishii, Akira;Ohta, Jitsuo;Oshima, Masaharu;Fujioka, Hiroshi;
12:14:10:1 Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with different Al concentrations
DOI:10.1063/1.3511339 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Fu, D. Y.;Zhang, R.;Wang, B. G.;Liu, B.;Xie, Z. L.;Xiu, X. Q.;Lu, H.;Zheng, Y. D.;Edwards, G.;
12:14:10:2 Effects of strain on the electrical properties of silicon carbide
DOI:10.1063/1.4812574 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Steel, Fiona M.;Tuttle, Blair R.;Shen, Xiao;Pantelides, Sokrates T.;
12:15:1 Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors
DOI:10.1021/nl9034219 JN:NANO LETTERS PY:2010
TC:153 AU: Gao, Xuan P. A.;Zheng, Gengfeng;Lieber, Charles M.;
12:15:2 Frequency Domain Detection of Biomolecules Using Silicon Nanowire Biosensors
DOI:10.1021/nl1020975 JN:NANO LETTERS PY:2010
TC:83 AU: Zheng, Gengfeng;Gao, Xuan P. A.;Lieber, Charles M.;
12:15:3 Nernst Limit in Dual-Gated Si-Nanowire FET Sensors
DOI:10.1021/nl100892y JN:NANO LETTERS PY:2010
TC:102 AU: Knopfmacher, O.;Tarasov, A.;Fu, Wangyang;Wipf, M.;Niesen, B.;Calame, M.;Schoenenberger, C.;
12:15:4 Silicon-Nanowire-Based CMOS-Compatible Field-Effect Transistor Nanosensors for Ultrasensitive Electrical Detection of Nucleic Acids
DOI:10.1021/nl202303y JN:NANO LETTERS PY:2011
TC:76 AU: Gao, Anran;Lu, Na;Dai, Pengfei;Li, Tie;Pei, Hao;Gao, Xiuli;Gong, Yibin;Wang, Yuelin;Fan, Chunhai;
12:15:5 Double-Gate Nanowire Field Effect Transistor for a Biosensor
DOI:10.1021/nl1010965 JN:NANO LETTERS PY:2010
TC:55 AU: Ahn, Jae-Hyuk;Choi, Sung-Jin;Han, Jin-Woo;Park, Tae Jung;Lee, Sang Yup;Choi, Yang-Kyu;
12:15:6 Effect of Nanowire Number, Diameter, and Doping Density on Nano-FET Biosensor Sensitivity
DOI:10.1021/nn202182p JN:ACS NANO PY:2011
TC:36 AU: Li, Jason;Zhang, Yanliang;To, Steve;You, Lidan;Sun, Yu;
12:15:7 Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response
DOI:10.1021/nl200623n JN:NANO LETTERS PY:2011
TC:43 AU: Chen, Songyue;Bomer, Johan G.;Carlen, Edwin T.;van den Berg, Albert;
12:15:8 Molecular Analysis of Blood with Micro-/Nanoscale Field-Effect-Transistor Biosensors
DOI:10.1002/smll.201100211 JN:SMALL PY:2011
TC:31 AU: Makowski, Matthew S.;Ivanisevic, Albena;
12:15:9 Enhanced Sensing of Nucleic Acids with Silicon Nanowire Field Effect Transistor Biosensors
DOI:10.1021/nl302476h JN:NANO LETTERS PY:2012
TC:39 AU: Gao, Anran;Lu, Na;Wang, Yuchen;Dai, Pengfei;Li, Tie;Gao, Xiuli;Wang, Yuelin;Fan, Chunhai;
12:15:10 Indium arsenide nanowire field-effect transistors for pH and biological sensing
DOI:10.1063/1.4878659 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Upadhyay, S.;Frederiksen, R.;Lloret, N.;De Vico, L.;Krogstrup, P.;Jensen, J. H.;Martinez, K. L.;Nygard, J.;
12:15:11 Top-down fabricated silicon nanowire sensors for real-time chemical detection
DOI:10.1088/0957-4484/21/1/015501 JN:NANOTECHNOLOGY PY:2010
TC:53 AU: Park, Inkyu;Li, Zhiyong;Pisano, Albert P.;Williams, R. Stanley;
12:15:12 CMOS-compatible, label-free silicon-nanowire biosensors to detect cardiac troponin I for acute myocardial infarction diagnosis
DOI:10.1016/j.bios.2012.02.019 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:24 AU: Kong, Tao;Su, Ruigong;Zhang, Beibei;Zhang, Qi;Cheng, Guosheng;
12:15:13 Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors
DOI:10.1063/1.3536674 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Tarasov, A.;Fu, W.;Knopfmacher, O.;Brunner, J.;Calame, M.;Schoenenberger, C.;
12:15:14 Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors
DOI:10.1063/1.4883757 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Pud, S.;Gasparyan, F.;Petrychuk, M.;Li, J.;Offenhaeusser, A.;Vitusevich, S. A.;
12:15:15 Understanding the Electrolyte Background for Biochemical Sensing with Ion-Sensitive Field-Effect Transistors
DOI:10.1021/nn303795r JN:ACS NANO PY:2012
TC:20 AU: Tarasov, Alexey;Wipf, Mathias;Stoop, Ralph L.;Bedner, Kristine;Fu, Wangyang;Guzenko, Vitaliy A.;Knopfmacher, Oren;Calame, Michel;Schoenenberger, Christian;
12:15:16 Thin Film Polycrystalline Silicon Nanowire Biosensors
DOI:10.1021/nl2042276 JN:NANO LETTERS PY:2012
TC:33 AU: Hakim, Mohammad M. A.;Lombardini, Marta;Sun, Kai;Giustiniano, Francesco;Roach, Peter L.;Davies, Donna E.;Howarth, Peter H.;de Planque, Maurits R. R.;Morgan, Hywel;Ashburn, Peter;
12:15:17 Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena
DOI:10.1021/nl5010724 JN:NANO LETTERS PY:2014
TC:3 AU: Li, Jing;Pud, Sergii;Petrychuk, Michail;Offenhaeusser, Andreas;Vitusevich, Svetlana;
12:15:18 Direct label-free electrical immunodetection in human serum using a flow-through-apparatus approach with integrated field-effect transistors
DOI:10.1016/j.bios.2009.12.026 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:38 AU: Kim, Ansoon;Ah, Chil Seong;Park, Chan Woo;Yang, Jong-Heon;Kim, Taeyoub;Ahn, Chang-Geun;Park, Sun Hee;Sung, Gun Yong;
12:15:19 Effects of buffer composition and dilution on nanowire field-effect biosensors
DOI:10.1088/0957-4484/24/3/035501 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Lloret, Noemie;Frederiksen, Rune S.;Moller, Thor C.;Rieben, Nathalie I.;Upadhyay, Shivendra;De Vico, Luca;Jensen, Jan H.;Nygard, Jesper;Martinez, Karen L.;
12:15:20 Self-Aligned Nanoforest in Silicon Nanowire for Sensitive Conductance Modulation
DOI:10.1021/nl3026955 JN:NANO LETTERS PY:2012
TC:6 AU: Seol, Myeong-Lok;Ahn, Jae-Hyuk;Choi, Ji-Min;Choi, Sung-Jin;Choi, Yang-Kyu;
12:15:21 Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers
DOI:10.1021/nn301495k JN:ACS NANO PY:2012
TC:33 AU: Dorvel, Brian R.;Reddy, Bobby, Jr.;Go, Jonghyun;Guevara, Carlos Duarte;Salm, Eric;Alam, Muhammad Ashraful;Bashir, Rashid;
12:15:22 Highly sensitive covalently functionalised integrated silicon nanowire biosensor devices for detection of cancer risk biomarker
DOI:10.1016/j.bios.2013.08.030 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:6 AU: Azmi, M. A. Mohd;Tehrani, Z.;Lewis, R. P.;Walker, K. -A. D.;Jones, D. R.;Daniels, D. R.;Doak, S. H.;Guy, O. J.;
12:15:23 Liquid and Back Gate Coupling Effect: Toward Biosensing with Lowest Detection Limit
DOI:10.1021/nl403748x JN:NANO LETTERS PY:2014
TC:4 AU: Pud, Sergii;Li, Jing;Sibiliev, Volodymyr;Petrychuk, Mykhaylo;Kovalenko, Valery;Offenhaeusser, Andreas;Vitusevich, Svetlana;
12:15:24 Highly Scalable, Uniform, and Sensitive Biosensors Based on Top-Down Indium Oxide Nanoribbons and Electronic Enzyme-Linked Immunosorbent Assay
DOI:10.1021/n15047889 JN:NANO LETTERS PY:2015
TC:1 AU: Aroonyadet, Noppadol;Wang, Xiaoli;Song, Yan;Chen, Haitian;Cote, Richard J.;Thompson, Mark E.;Datar, Ram H.;Zhou, Chongwu;
12:15:25 A Nanoelectronic Enzyme-Linked Immunosorbent Assay for Detection of Proteins in Physiological Solutions
DOI:10.1002/smll.200901551 JN:SMALL PY:2010
TC:26 AU: Stern, Eric;Vacic, Aleksandar;Li, Chao;Ishikawa, Fumiaki N.;Zhou, Chongwu;Reed, Mark A.;Fahmy, Tarek M.;
12:15:26 Optimal signal-to-noise ratio for silicon nanowire biochemical sensors
DOI:10.1063/1.3608155 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Rajan, Nitin K.;Routenberg, David A.;Reed, Mark A.;
12:15:27 A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity
DOI:10.1063/1.3535958 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Clement, N.;Nishiguchi, K.;Dufreche, J. F.;Guerin, D.;Fujiwara, A.;Vuillaume, D.;
12:15:28 Limit of detection of field effect transistor biosensors: Effects of surface modification and size dependence
DOI:10.1063/1.4867025 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Rajan, Nitin K.;Brower, Kara;Duan, Xuexin;Reed, Mark A.;
12:15:29 Theory of signal and noise in double-gated nanoscale electronic pH sensors
DOI:10.1063/1.4737604 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Go, Jonghyun;Nair, Pradeep R.;Alam, Muhammad A.;
12:15:30 True Reference Nanosensor Realized with Silicon Nanowires
DOI:10.1021/la301555r JN:LANGMUIR PY:2012
TC:20 AU: Tarasov, A.;Wipf, M.;Bedner, K.;Kurz, J.;Fu, W.;Guzenko, V. A.;Knopfmacher, O.;Stoop, R. L.;Calame, M.;Schoenenberger, C.;
12:15:31 Localized Temperature and Chemical Reaction Control in Nanoscale Space by Nanowire Array
DOI:10.1021/nl2026585 JN:NANO LETTERS PY:2011
TC:15 AU: Jin, C. Yan;Li, Zhiyong;Williams, R. Stanley;Lee, K-Cheol;Park, Inkyu;
12:15:32 Rapid, Label-Free, Electrical Whole Blood Bioassay Based on Nanobiosensor Systems
DOI:10.1021/nn2035796 JN:ACS NANO PY:2011
TC:30 AU: Chang, Hsiao-Kang;Ishikawa, Fumiaki N.;Zhang, Rui;Datar, Ram;Cote, Richard J.;Thompson, Mark E.;Zhou, Chongwu;
12:15:33 Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane
DOI:10.1063/1.4861598 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Dutu, C. A.;Vlad, A.;Reckinger, N.;Flandre, D.;Raskin, J. -P.;Melinte, S.;
12:15:34 Microwave sensing of nanostructured semiconductor surfaces
DOI:10.1063/1.4861424 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Perticaroli, S.;Varlamava, V.;Palma, F.;
12:15:35 Probing the sensitivity of nanowire-based biosensors using liquid-gating
DOI:10.1088/0957-4484/21/42/425505 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Lu, Ming-Pei;Hsiao, Cheng-Yun;Lai, Wen-Tsan;Yang, Yuh-Shyong;
12:15:36 Predictive simulations and optimization of nanowire field-effect PSA sensors including screening
DOI:10.1088/0957-4484/24/22/225503 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Baumgartner, Stefan;Heitzinger, Clemens;Vacic, Aleksandar;Reed, Mark A.;
12:15:37 Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors
DOI:10.1021/nl4019879 JN:NANO LETTERS PY:2013
TC:6 AU: Clement, N.;Nishiguchi, K.;Dufreche, J. F.;Guerin, D.;Fujiwara, A.;Vuillaume, D.;
12:15:38 Coupled Heterogeneous Nanowire-Nanoplate Planar Transistor Sensors for Giant (> 10 V/pH) Nernst Response
DOI:10.1021/nn300874w JN:ACS NANO PY:2012
TC:11 AU: Go, Jonghyun;Nair, Pradeep R.;Reddy, Bobby, Jr.;Dorvel, Brian;Bashir, Rashid;Alam, Muhammad A.;
12:15:39 Noise spectroscopy as an equilibrium analysis tool for highly sensitive electrical biosensing
DOI:10.1063/1.4748931 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Guo, Qiushi;Kong, Tao;Su, Ruigong;Zhang, Qi;Cheng, Guosheng;
12:15:40 A graphene field-effect capacitor sensor in electrolyte
DOI:10.1063/1.4759147 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Chen, Si;Zhang, Zhi-Bin;Ma, Laipeng;Ahlberg, Patrik;Gao, Xindong;Qiu, Zhijun;Wu, Dongping;Ren, Wencai;Cheng, Hui-Ming;Zhang, Shi-Li;
12:15:41 Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection
DOI:10.1063/1.4861228 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Ahn, Jae-Hyuk;Yun, Jeonghoon;Choi, Yang-Kyu;Park, Inkyu;
12:15:42 Determination of Molecular Configuration by Debye Length Modulation
DOI:10.1021/ja205684a JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:25 AU: Vacic, Aleksandar;Criscione, Jason M.;Rajan, Nitin K.;Stern, Eric;Fahmy, Tarek M.;Reed, Mark A.;
12:15:43 Optimization of nanowire DNA sensor sensitivity using self-consistent simulation
DOI:10.1088/0957-4484/22/42/425503 JN:NANOTECHNOLOGY PY:2011
TC:10 AU: Baumgartner, S.;Vasicek, M.;Bulyha, A.;Heitzinger, C.;
12:15:44 Surface potential variations on a silicon nanowire transistor in biomolecular modification and detection
DOI:10.1088/0957-4484/22/13/135503 JN:NANOTECHNOLOGY PY:2011
TC:16 AU: Tsai, Chia-Chang;Chiang, Pei-Ling;Sun, Chih-Jung;Lin, Tsung-Wu;Tsai, Ming-Hsueh;Chang, Yun-Chorng;Chen, Yit-Tsong;
12:15:45 Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor
DOI:10.1038/am.2012.75 JN:NPG ASIA MATERIALS PY:2013
TC:7 AU: Shalev, Gil;Landman, Guy;Amit, Iddo;Rosenwaks, Yossi;Levy, Ilan;
12:15:46 Selective Sodium Sensing with Gold-Coated Silicon Nanowire Field-Effect Transistors in a Differential Setup
DOI:10.1021/nn401678u JN:ACS NANO PY:2013
TC:13 AU: Wipf, Mathias;Stoop, Ralph L.;Tarasov, Alexey;Bedner, Kristine;Fu, Wangyang;Wright, Iain A.;Martin, Colin J.;Constable, Edwin C.;Calame, Michel;Schoenenberger, Christian;
12:15:47 A pH sensor with a double-gate silicon nanowire field-effect transistor
DOI:10.1063/1.4793655 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Ahn, Jae-Hyuk;Kim, Jee-Yeon;Seol, Myeong-Lok;Baek, David J.;Guo, Zheng;Kim, Chang-Hoon;Choi, Sung-Jin;Choi, Yang-Kyu;
12:15:48 Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique
DOI:10.1063/1.4795603 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Pud, S.;Li, J.;Petrychuk, M.;Feste, S.;Vitusevich, S.;Danilchenko, B.;Offenhaeusser, A.;Mantl, S.;
12:15:49 Advanced fabrication of Si nanowire FET structures by means of a parallel approach
DOI:10.1088/0957-4484/25/27/275302 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Li, J.;Pud, S.;Mayer, D.;Vitusevich, S.;
12:15:50 Signal-to-Noise Ratio Enhancement of Silicon Nanowires Biosensor with Rolling Circle Amplification
DOI:10.1021/nl401628y JN:NANO LETTERS PY:2013
TC:16 AU: Gao, Anran;Zou, Nengli;Dai, Pengfei;Lu, Na;Li, Tie;Wang, Yuelin;Zhao, Jianlong;Mao, Hongju;
12:15:51 Label-Free Attomolar Detection of Proteins Using Integrated Nanoelectronic and Electrokinetic Devices
DOI:10.1002/smll.200902132 JN:SMALL PY:2010
TC:31 AU: Gong, Jian-Ru;
12:15:52 CMOS-Compatible Silicon Nanowire Field-Effect Transistors for Ultrasensitive and Label-Free MicroRNAs Sensing
DOI:10.1002/smll.201302990 JN:SMALL PY:2014
TC:9 AU: Lu, Na;Gao, Anran;Dai, Pengfei;Song, Shiping;Fan, Chunhai;Wang, Yuelin;Li, Tie;
12:15:53 Regenerative Electronic Biosensors Using Supramolecular Approaches
DOI:10.1021/nn306034f JN:ACS NANO PY:2013
TC:12 AU: Duan, Xuexin;Rajan, Nitin K.;Routenberg, David A.;Huskens, Jurriaan;Reed, Mark A.;
12:15:54 Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors
DOI:10.1007/s00339-011-6754-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:8 AU: Choi, Sun;Park, Inkyu;Hao, Zhao;Holman, Hoi-Ying N.;Pisano, Albert P.;
12:15:55 Laser direct writing of silicon field effect transistor sensors
DOI:10.1063/1.4794147 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Nam, Woongsik;Mitchell, James I.;Tansarawiput, Chookiat;Qi, Minghao;Xu, Xianfan;
12:15:56 Gold nanoparticle embedded silicon nanowire biosensor for applications of label-free DNA detection
DOI:10.1016/j.bios.2010.02.010 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:21 AU: Ryu, Seong-Wan;Kim, Chang-Hoon;Han, Jin-Woo;Kim, Chung-Jin;Jung, Cheulhee;Park, Hyun Gyu;Choi, Yang-Kyu;
12:15:57 A device design of an integrated CMOS poly-silicon biosensor-on-chip to enhance performance of biomolecular analytes in serum samples
DOI:10.1016/j.bios.2014.05.010 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:4 AU: Yen, Pei-Wen;Huang, Che-Wei;Huang, Yu-Jie;Chen, Min-Cheng;Liao, Hsin-Hao;Lu, Shey-Shi;Lin, Chih-Ting;
12:15:58 Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques
DOI:10.1063/1.4833567 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Li, J.;Vitusevich, S. A.;Petrychuk, M. V.;Pud, S.;Offenhaeusser, A.;Danilchenko, B. A.;
12:15:59 Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface
DOI:10.1088/0957-4484/22/40/405501 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Zafar, Sufi;D'Emic, Christopher;Afzali, Ali;Fletcher, Benjamin;Zhu, Y.;Ning, Tak;
12:15:60 Optimized operation of silicon nanowire field effect transistor sensors
DOI:10.1088/0957-4484/25/50/505501 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Rim, Taiuk;Meyyappan, M.;Baek, Chang-Ki;
12:15:61 Electrical Performance of Silicon-on-Insulator Field-Effect Transistors with Multiple Top-Gate Organic Layers in Electrolyte Solution
DOI:10.1021/nn100936h JN:ACS NANO PY:2010
TC:9 AU: Khamaisi, Bassam;Vaknin, Oshri;Shaya, Oren;Ashkenasy, Nurit;
12:15:62 Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors
DOI:10.1063/1.3526382 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Rajan, Nitin K.;Routenberg, David A.;Chen, Jin;Reed, Mark A.;
12:15:63 Photosensitive biosensor array system using optical addressing without an addressing circuit on array biochips
DOI:10.1063/1.3486179 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Ahn, Chang-Geun;Ah, Chil Seong;Kim, Tae-Youb;Park, Chan Woo;Yang, Jong-Heon;Kim, Ansoon;Sung, Gun Yong;
12:15:64 Multiplexed SOI BioFETs
DOI:10.1016/j.bios.2011.07.025 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:10 AU: Vacic, Aleksandar;Criscione, Jason M.;Stern, Eric;Rajan, Nitin K.;Fahmy, Tarek;Reed, Mark A.;
12:15:65 Multiplexed detection and differentiation of the DNA strains for influenza A (H1N1 2009) using a silicon-based microfluidic system
DOI:10.1016/j.bios.2010.08.076 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:23 AU: Kao, Linus Tzu-Hsiang;Shankar, Lakshmi;Kang, Tae Goo;Zhang, Guojun;Tay, Guang Kai Ignatius;Rafei, Siti Rafeah Mohamed;Lee, Charlie Wah Heng;
12:15:66 Detection of uncharged or feebly charged small molecules by field-effect transistor biosensors
DOI:10.1016/j.bios.2012.01.010 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:3 AU: Ah, Chil Seong;Park, Chan Woo;Yang, Jong-Heon;Lee, Joon Sung;Kim, Wan-Joong;Chung, Kwang Hyo;Choi, Yo Han;Baek, In Bok;Kim, Jungho;Sung, Gun Yong;
12:15:67 Theory of "Selectivity" of label-free nanobiosensors: A geometro-physical perspective
DOI:10.1063/1.3310531 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Nair, Pradeep R.;Alam, Muhammad A.;
12:15:68 An underlap field-effect transistor for electrical detection of influenza
DOI:10.1063/1.3291617 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Lee, Kwang-Won;Choi, Sung-Jin;Ahn, Jae-Hyuk;Moon, Dong-Il;Park, Tae Jung;Lee, Sang Yup;Choi, Yang-Kyu;
12:15:69 Highly sensitive ion detection using Si single-electron transistors
DOI:10.1063/1.3569148 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kudo, Takashi;Nakajima, Anri;
12:15:70 Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors
DOI:10.1063/1.4723843 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Baek, David J.;Duarte, Juan P.;Moon, Dong-Il;Kim, Chang-Hoon;Ahn, Jae-Hyuk;Choi, Yang-Kyu;
12:15:71 Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit
DOI:10.1063/1.3685497 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Jang, Hyun-June;Cho, Won-Ju;
12:15:72 Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip
DOI:10.1063/1.3676664 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kudo, Takashi;Nakajima, Anri;
12:15:73 Biomolecule detection based on Si single-electron transistors for practical use
DOI:10.1063/1.4816267 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Nakajima, Anri;Kudo, Takashi;Furuse, Sadaharu;
12:15:74 Tunable nanowire Wheatstone bridge for improved sensitivity in molecular recognition Carsten
DOI:10.1063/1.4789994 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Maedler, Carsten;Erramilli, Shyamsunder;House, L. J.;Hong, M. K.;Mohanty, Pritiraj;
12:15:75 High Performance of Silicon Nanowire-Based Biosensors using a High-k Stacked Sensing Thin Film
DOI:10.1021/am401026z JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Bae, Tae-Eon;Jang, Hyun-June;Yang, Jong-Heon;Cho, Won-Ju;
12:15:76 The interplay between pH sensitivity and label-free protein detection in immunologically modified nano-scaled field-effect transistor
DOI:10.1016/j.bios.2011.11.038 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:6 AU: Shalev, Gil;Rosenwaks, Yossi;Levy, Ilan;
12:15:77 Surface engineering for enhancement of sensitivity in an underlap-FET biosensor by control of wettability
DOI:10.1016/j.bios.2012.08.036 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:11 AU: Kim, Jee-Yeon;Choi, Kyungyong;Moon, Dong-Il;Ahn, Jae-Hyuk;Park, Tae Jung;Lee, Sang Yup;Choi, Yang-Kyu;
12:15:78 Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator
DOI:10.1088/0957-4484/23/6/065202 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Chung, In-Young;Jang, Hyeri;Lee, Jieun;Moon, Hyunggeun;Seo, Sung Min;Kim, Dae Hwan;
12:15:79 Suspended honeycomb nanowire ISFETs for improved stiction-free performance
DOI:10.1088/0957-4484/25/34/345501 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Kim, Kihyun;Rim, Taiuk;Park, Chanoh;Kim, Donghoon;Meyyappan, M.;Lee, Jeong-Soo;
12:15:80 Direct, Rapid, and Label-Free Detection of Enzyme Substrate Interactions in Physiological Buffers Using CMOS-Compatible Nanoribbon Sensors
DOI:10.1021/nl502366e JN:NANO LETTERS PY:2014
TC:2 AU: Mu, Luye;Droujinine, Ilia A.;Rajan, Nitin K.;Sawtelle, Sonya D.;Reed, Mark A.;
12:15:81 A two-terminal silicon nanoribbon field-effect pH sensor
DOI:10.1063/1.3532964 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Chen, Si;Jokilaakso, Nima;Bjork, Per;Karlstrom, Amelie Eriksson;Zhang, Shi-Li;
12:15:82 Channel length dependent sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors
DOI:10.1063/1.3696035 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Shin, Kyeong-Sik;Pan, Andrew;Chui, Chi On;
12:15:83 A biristor based on a floating-body silicon nanowire for biosensor applications
DOI:10.1063/1.4789904 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Moon, Dong-Il;Peycelon, Maxime;Kim, Jee-Yeon;Ahn, Jae-Hyuk;Park, Tae Jung;Choi, Yang-Kyu;
12:15:84 Label-Free and Rapid Electrical Detection of hTSH with CMOS-Compatible Silicon Nanowire Transistor Arrays
DOI:10.1021/am505915y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Lu, Na;Dai, Pengfei;Gao, Anran;Valiaho, Jari;Kallio, Pasi;Wang, Yuelin;Li, Tie;
12:15:85 Toxin detection by Si photosensitive biosensors with a new measurement scheme
DOI:10.1016/j.bios.2011.08.009 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:2 AU: Park, Chan Woo;Yang, Jong-Heon;Ah, Chil Seong;Ahn, Chang-Geun;Choi, Yo Han;Chung, Kwang Hyo;Kim, Wan-Joong;Sung, Gun Yong;
12:15:86 The future scalability of pH-based genome sequencers: A theoretical perspective
DOI:10.1063/1.4825119 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Go, Jonghyun;Alam, Muhammad A.;
12:15:87 Silicon nanowire arrays as learning chemical vapour classifiers
DOI:10.1088/0957-4484/22/29/295502 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Niskanen, A. O.;Colli, A.;White, R.;Li, H. W.;Spigone, E.;Kivioja, J. M.;
12:15:88 Electron states in a silicon nanowire in the presence of surface potential and field
DOI:10.1088/0957-4484/23/41/415201 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Das, N. R.;Shinwari, M. W.;Deen, M. J.;Lee, Jeong-Soo;
12:15:89 Kinetic parameter estimation and fluctuation analysis of CO at SnO2 single nanowires
DOI:10.1088/0957-4484/24/31/315501 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Tulzer, Gerhard;Baumgartner, Stefan;Brunet, Elise;Mutinati, Giorgio C.;Steinhauer, Stephan;Koeck, Anton;Barbano, Paolo E.;Heitzinger, Clemens;
12:15:90 Using Room Temperature Current Noise To Characterize Single Molecular Spectra
DOI:10.1021/nn404526w JN:ACS NANO PY:2014
TC:1 AU: Vasudevan, Smitha;Ghosh, Avik W.;
12:15:91 Nanoelectronic detection of breast cancer biomarker
DOI:10.1063/1.3519983 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Chen, Yu;Wang, Xihua;Hong, Mi K.;Rosenberg, Carol L.;Reinhard, Bjoern M.;Erramilli, Shyamsunder;Mohanty, Pritiraj;
12:15:92 Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors (vol 97, 243501, 2010)
DOI:10.1063/1.3590274 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Rajan, Nitin K.;Routenberg, David A.;Chen, Jin;Reed, Mark A.;
12:15:93 Integrated optical detection of autonomous capillary microfluidic immunoassays:a hand-held point-of-care prototype
DOI:10.1016/j.bios.2014.02.009 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:7 AU: Novo, P.;Chu, V.;Conde, J. P.;
12:15:94 Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model
DOI:10.1063/1.4770475 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Dobrovolsky, V.;Sizov, F.;
12:15:95 Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process
DOI:10.2320/matertrans.M2012068 JN:MATERIALS TRANSACTIONS PY:2012
TC:1 AU: Hong, Hyobong;Park, Yang-Kyu;Kim, Jae-Yeon;Song, Kibong;Choi, Chel-Jong;
12:15:96 Antigen-antibody biorecognition events as discriminated by noise analysis of force spectroscopy curves
DOI:10.1088/0957-4484/25/33/335102 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Bizzarri, Anna Rita;Cannistraro, Salvatore;
12:16:1 Synthesis and applications of metal silicide nanowires
DOI:10.1039/b910968d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:105 AU: Schmitt, Andrew L.;Higgins, Jeremy M.;Szczech, Jeannine R.;Jin, Song;
12:16:2 Imaging Impurities in Semiconductor Nanostructures
DOI:10.1021/cm400004x JN:CHEMISTRY OF MATERIALS PY:2013
TC:6 AU: Holmberg, Vincent C.;Helps, Justin R.;Mkhoyan, K. Andre;Norris, David J.;
12:16:3 Signature of Helimagnetic Ordering in Single-Crystal MnSi Nanowires
DOI:10.1021/nl904042m JN:NANO LETTERS PY:2010
TC:40 AU: Higgins, Jeremy M.;Ding, Ruihua;DeGrave, John P.;Jin, Song;
12:16:4 Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires
DOI:10.1021/nl103156q JN:NANO LETTERS PY:2010
TC:39 AU: Lin, Yung-Chen;Chen, Yu;Xu, Di;Huang, Yu;
12:16:5 Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts
DOI:10.1021/nl101477q JN:NANO LETTERS PY:2010
TC:36 AU: Lin, Yung-Chen;Chen, Yu;Shaios, Alexandros;Huang, Yu;
12:16:6 Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application
DOI:10.1021/nn301956m JN:ACS NANO PY:2012
TC:21 AU: Tang, Jianshi;Wang, Chiu-Yen;Hung, Min-Hsiu;Jiang, Xiaowei;Chang, Li-Te;He, Liang;Liu, Pei-Hsuan;Yang, Hong-Jie;Tuan, Hsing-Yu;Chen, Lih-Juann;Wang, Kang L.;
12:16:7 Vapor Phase Conversion Synthesis of Higher Manganese Silicide (MnSi1.75) Nanowire Arrays for Thermoelectric Applications
DOI:10.1021/cm3040032 JN:CHEMISTRY OF MATERIALS PY:2013
TC:13 AU: Pokhrel, Ankit;Degregorio, Zachary P.;Higgins, Jeremy M.;Girard, Steven N.;Jin, Song;
12:16:8 Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures
DOI:10.1021/acs.nanolett.5b00327 JN:NANO LETTERS PY:2015
TC:0 AU: Chen, Renjie;Dayeh, Shadi A.;
12:16:9 Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors
DOI:10.1021/nn2017777 JN:ACS NANO PY:2011
TC:27 AU: Tang, Jianshi;Wang, Chiu-Yen;Xiu, Faxian;Lang, Murong;Chu, Li-Wei;Tsai, Cho-Jen;Chueh, Yu-Lun;Chen, Lih-Juann;Wang, Kang L.;
12:16:10 Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors
DOI:10.1021/nl401238p JN:NANO LETTERS PY:2013
TC:13 AU: Tang, Jianshi;Wang, Chiu-Yen;Chang, Li-Te;Fan, Yabin;Nie, Tianxiao;Chan, Michael;Jiang, Wanjun;Chen, Yu-Ting;Yang, Hong-Jie;Tuan, Hsing-Yu;Chen, Lih-Juann;Wang, Kang L.;
12:16:11 Spin Polarization Measurement of Homogeneously Doped Fe1-xCoxSi Nanowires by Andreev Reflection Spectroscopy
DOI:10.1021/nl2026426 JN:NANO LETTERS PY:2011
TC:18 AU: DeGrave, John P.;Schmitt, Andrew L.;Selinsky, Rachel S.;Higgins, Jeremy M.;Keavney, David J.;Jin, Song;
12:16:12 Mechanistic Investigation of the Growth of Fe1-xCoxSi (0 <= x <= 1) and Fe-5(Si1-yGey)(3) (0 <= y <= 0.33) Ternary Alloy Nanowires
DOI:10.1021/nn200387y JN:ACS NANO PY:2011
TC:16 AU: Higgins, Jeremy M.;Carmichael, Penelope;Schmitt, Andrew L.;Lee, Stephen;Degrave, John P.;Jint, Song;
12:16:13 Growth of CuInSe2 and In2Se3/CuInSe2 Nano-Heterostructures through Solid State Reactions
DOI:10.1021/nl202463w JN:NANO LETTERS PY:2011
TC:24 AU: Hsin, Cheng-Lun;Lee, Wei-Fan;Huang, Chi-Te;Huang, Chun-Wei;Wu, Wen-Wei;Chen, Lih-Juann;
12:16:14 Real-Time Observation of Impurity Diffusion in Silicon Nanowires
DOI:10.1021/nl201879u JN:NANO LETTERS PY:2011
TC:10 AU: Holmberg, Vincent C.;Collier, Katharine A.;Korgel, Brian A.;
12:16:15 Kinetic Competition Model and Size-Dependent Phase Selection in 1-D Nanostructures
DOI:10.1021/nl300990q JN:NANO LETTERS PY:2012
TC:19 AU: Chen, Yu;Lin, Yung-Chen;Huang, Chun-Wei;Wang, Chun-Wen;Chen, Lih-Juann;Wu, Wen-Wei;Huang, Yu;
12:16:16 Electrical Properties and Magnetic Response of Cobalt Germanosilicide Nanowires
DOI:10.1021/nn202695a JN:ACS NANO PY:2011
TC:5 AU: Tsai, Chun-I;Wang, Chiu-Yen;Tang, Jianshi;Hung, Min-Hsiu;Wang, Kang L.;Chen, Lih-Juann;
12:16:17 Free-Standing and Single-Crystalline Fe1-xMnxSi Nanowires with Room-Temperature Ferromagnetism and Excellent Magnetic Response
DOI:10.1021/nn300344k JN:ACS NANO PY:2012
TC:5 AU: Hung, Min-Hsiu;Wang, Chiu-Yen;Tang, Jianshi;Lin, Ching-Chun;Hou, Te-Chien;Jiang, Xiaowei;Wang, Kang L.;Chen, Lih-Juann;
12:16:18 Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates
DOI:10.1021/nl401593f JN:NANO LETTERS PY:2013
TC:6 AU: Chen, Yu;Lin, Yung-Chen;Zhong, Xing;Cheng, Hung-Chieh;Duan, Xiangfeng;Huang, Yu;
12:16:19 Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires
DOI:10.1088/0957-4484/22/36/365305 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Ogata, K.;Sutter, E.;Zhu, X.;Hofmann, S.;
12:16:20 Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts
DOI:10.1021/nl3011676 JN:NANO LETTERS PY:2012
TC:22 AU: Tang, Wei;Dayeh, Shadi A.;Picraux, S. Tom;Huang, Jian Yu;Tu, King-Ning;
12:16:21 Epitaxially-hyperbranched FeSi nanowires exhibiting merohedral twinning
DOI:10.1039/b917032d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:25 AU: Szczech, Jeannine R.;Jin, Song;
12:16:22 Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn5Ge3 Nanowire
DOI:10.1021/nl303645k JN:NANO LETTERS PY:2012
TC:6 AU: Tang, Jianshi;Wang, Chiu-Yen;Jiang, Wanjun;Chang, Li-Te;Fan, Yabin;Chan, Michael;Wu, Can;Hung, Min-Hsiu;Liu, Pei-Hsuan;Yang, Hong-Jie;Tuan, Hsing-Yu;Chen, Lih-Juann;Wang, Kang L.;
12:16:23 Itinerant Helimagnetic Single-Crystalline MnSi Nanowires
DOI:10.1021/nn901653q JN:ACS NANO PY:2010
TC:20 AU: Seo, Kwanyong;Yoon, Hana;Ryu, Seong-Wan;Lee, Sunghun;Jo, Younghun;Jung, Myung-Hwa;Kim, Jinhee;Choi, Yang-Kyu;Kim, Bongsoo;
12:16:24 Spontaneous Growth and Phase Transformation of Highly Conductive Nickel Germanide Nanowires
DOI:10.1021/nn201108u JN:ACS NANO PY:2011
TC:10 AU: Yan, Chaoyi;Higgins, Jeremy M.;Faber, Matthew S.;Lee, Pooi See;Jin, Song;
12:16:25 Syntheses and structural characterizations of CrSi2 nanostructures using Si substrates under CrCl2 vapor
DOI:10.1016/j.jcrysgro.2012.12.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Li, Wen;Meng, Erchao;Matsushita, Tomoji;Oda, Shingo;Ishikawa, Daisuke;Nakane, Kaito;Hu, Junhua;Guan, Shaokang;Ishida, Akihiro;Tatsuoka, Hirokazu;
12:16:26 Electric-Field Control of Ferromagnetism in Mn-Doped ZnO Nanowires
DOI:10.1021/nl404464q JN:NANO LETTERS PY:2014
TC:7 AU: Chang, Li-Te;Wang, Chiu-Yen;Tang, Jianshi;Nie, Tianxiao;Jiang, Wanjun;Chu, Chia-Pu;Arafin, Shamsul;He, Liang;Afsal, Manekkathodi;Chen, Lih-Juann;Wang, Kang L.;
12:16:27 Synthesis and Characterization of Manganese-Rich Silicide (alpha-Mn5Si3, beta-Mn5Si3, and beta-Mn3Si) Nanowires
DOI:10.1021/cm2007507 JN:CHEMISTRY OF MATERIALS PY:2011
TC:15 AU: Higgins, Jeremy M.;Ding, Ruihua;Jin, Song;
12:16:28 Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors
DOI:10.1088/0957-4484/21/50/505704 JN:NANOTECHNOLOGY PY:2010
TC:15 AU: Tang, Jianshi;Wang, Chiu-Yen;Xiu, Faxian;Hong, Augustin J.;Chen, Shengyu;Wang, Minsheng;Zeng, Caifu;Yang, Hong-Jie;Tuan, Hsing-Yu;Tsai, Cho-Jen;Chen, Lih Juann;Wang, Kang L.;
12:16:29 Diffusion-Driven Crystal Structure Transformation: Synthesis of Heusler Alloy Fe3Si Nanowires
DOI:10.1021/nl102093e JN:NANO LETTERS PY:2010
TC:19 AU: Seo, Kwanyong;Bagkar, Nitin;Kim, Si-in;In, Juneho;Yoon, Hana;Jo, Younghun;Kim, Bongsoo;
12:16:30 Nucleation and Atomic Layer Reaction in Nickel Silicide for Defect-Engineered Si Nanochannels
DOI:10.1021/nl400949n JN:NANO LETTERS PY:2013
TC:13 AU: Tang, Wei;Picraux, S. Tom;Huang, Jian Yu;Gusak, Andriy M.;Tu, King-Ning;Dayeh, Shadi A.;
12:16:31 Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth
DOI:10.1063/1.3574650 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Yaish, Y. E.;Katsman, A.;Cohen, G. M.;Beregovsky, M.;
12:16:32 Selective synthesis and superconductivity of In-Sn intermetallic nanowires sheathed in carbon nanotubes
DOI:10.1088/0957-4484/23/28/285604 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Jeong, Namjo;Yeo, Jeong-gu;
12:16:33 Crystallinity Control of Ferromagnetic Contacts in Stressed Nanowire Templates and the Magnetic Domain Anisotropy
DOI:10.1021/nl302113r JN:NANO LETTERS PY:2012
TC:3 AU: Lin, Yung-Chen;Chen, Yu;Chen, Renjie;Ghosh, Kaushik;Xiong, Qihua;Huang, Yu;
12:16:34 Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application
DOI:10.1021/nl500749q JN:NANO LETTERS PY:2014
TC:6 AU: Huang, Chun-Wei;Chen, Jui-Yuan;Chiu, Chung-Hua;Wu, Wen-Wei;
12:16:35 Growth of Multiple Metal/Semiconductor Nanoheterostructures through Point and Line Contact Reactions
DOI:10.1021/nl101842w JN:NANO LETTERS PY:2010
TC:20 AU: Wu, W. W.;Lu, K. C.;Wang, C. W.;Hsieh, H. Y.;Chen, S. Y.;Chou, Y. C.;Yu, S. Y.;Chen, L. J.;Tu, K. N.;
12:16:36 Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions
DOI:10.1021/acs.nanolett.5b01234 JN:NANO LETTERS PY:2015
TC:0 AU: Chou, Yi-Chia;Tang, Wei;Chiou, Chien-Jyun;Chen, Kai;Minor, Andrew M.;Tu, K. N.;
12:16:37 Truncated Tetrahedron Seed Crystals Initiating Stereoaligned Growth of FeSi Nanowires
DOI:10.1021/nn302141w JN:ACS NANO PY:2012
TC:2 AU: Kim, Si-in;Yoon, Hana;Seo, Kwanyong;Yoo, Youngdong;Lee, Sungyul;Kim, Bongsoo;
12:16:38 Realization of highly crystallographic three-dimensional nanosheets by a stress-induced oriented-diffusion method
DOI:10.1063/1.4892091 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Gharooni, M.;Hosseini, M.;Mohajerzadeh, S.;Taghinejad, M.;Taghinejad, H.;Abdi, Y.;
12:16:39 Solid-State Phase Transformation as a Route for the Simultaneous Synthesis and Welding of Single-Crystalline Mg2Si Nanowires
DOI:10.1021/cm500153h JN:CHEMISTRY OF MATERIALS PY:2014
TC:2 AU: Kang, Yongmin;Vaddiraju, Sreeram;
12:16:40 Surface Diffusion Controlled Formation of Nickel Silicides in Silicon Nanowires
DOI:10.1007/s11664-009-1071-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:13 AU: Katsman, A.;Yaish, Y.;Rabkin, E.;Beregovsky, M.;
12:16:41 Atomistically observing real-space structure of composition modulated (Nb0.94V0.06)(10)(SixGe1-x)(7) nanowires with ultralow resistivity
DOI:10.1039/c2tc00352j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Lee, Sunghun;In, Juneho;Kim, Si-in;Park, Yun Chang;Kim, Hyunju;Yoon, Hana;Kim, Jinhee;Lee, Sungyul;Kim, Bongsoo;
12:16:42 Silicide formation in contacts to Si nanowires
DOI:10.1007/s10853-012-6549-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Dellas, N. S.;Schuh, C. J.;Mohney, S. E.;
12:16:43 An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters
DOI:10.1088/0957-4484/22/5/055603 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Liu, Chun-Yi;Li, Wun-Shan;Chu, Li-Wei;Lu, Ming-Yen;Tsai, Cho-Jen;Chen, Lih-Juann;
12:16:44 Complete Replacement of Metal in Metal Oxide Nanowires via Atomic Diffusion: In/ZnO Case Study
DOI:10.1021/nl5006228 JN:NANO LETTERS PY:2014
TC:1 AU: Wang, Shau-Chieh;Lu, Ming-Yen;Manekkathodi, Afsal;Liu, Pei-Hsuan;Lin, Hung-Chiao;Li, Wun-Shan;Hou, Te-Chien;Gwo, Shangjr;Chen, Lih-Juann;
12:16:45 Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
DOI:10.1021/nn203445p JN:ACS NANO PY:2011
TC:9 AU: Chen, Sheng-Yu;Yeh, Ping-Hung;Wu, Wen-Wei;Chen, Uei-Shin;Chueh, Yu-Lun;Yang, Yu-Chen;Gwo, Shangir;Chen, Lih-Juann;
12:16:46 Top-gated germanium nanowire quantum dots in a few-electron regime
DOI:10.1063/1.3684941 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Shin, Sung-Kwon;Huang, Shaoyun;Fukata, Naoki;Ishibashi, Koji;
12:16:47 Kinetics of reactions of Ni contact pads with Si nanowires
DOI:10.1557/jmr.2011.188 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:8 AU: Dellas, Nicholas S.;Abraham, Michael;Minassian, Sharis;Kendrick, Chito;Mohney, Suzanne E.;
12:16:48 Gold Catalyzed Nickel Disilicide Formation: A New Solid-Liquid-Solid Phase Growth Mechanism
DOI:10.1021/nl4032023 JN:NANO LETTERS PY:2013
TC:5 AU: Tang, Wei;Picraux, S. Tom;Huang, Jian Yu;Liu, Xiaohua;Tu, K. N.;Dayeh, Shadi A.;
12:16:49 Tailoring perpendicular magnetic anisotropy in ultrathin Co/Pt multilayers coupled to NiO
DOI:10.1103/PhysRevB.81.224412 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Ouyang, H.;Han, Y. -H.;Lo, S. -C.;Su, C. -H.;Shiu, Y. -R.;Lin, K. -W.;Desautels, R. D.;van Lierop, J.;
12:16:50 Formation of nickel germanide contacts to Ge nanowires
DOI:10.1063/1.3533808 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Dellas, N. S.;Minassian, S.;Redwing, J. M.;Mohney, S. E.;
12:16:51 Room-temperature ferromagnetism in CrSi2(core)/SiO2(shell) semiconducting nanocables
DOI:10.1063/1.3587641 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Hou, Te-Chien;Han, You-Hong;Lo, Shen-Chuan;Lee, Cheng-Tse;Ouyang, Hao;Chen, Lih-Juann;
12:16:52 Evolution of nickel silicide intrusions in silicon nanowires during thermal cycling
DOI:10.1063/1.4792670 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Katsman, Alex;Beregovsky, Michael;Yaish, Yuval E.;
12:16:53 Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide
DOI:10.1016/j.materresbull.2011.11.019 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Chen, Xiao;Zhang, Bingsen;Li, Chuang;Shao, Zhengfeng;Su, Dangsheng;Williams, Christopher T.;Liang, Changhai;
12:16:54 Cobalt silicide nanocables grown on Co films: synthesis and physical properties
DOI:10.1088/0957-4484/21/48/485602 JN:NANOTECHNOLOGY PY:2010
TC:7 AU: Hsin, Cheng-Lun;Yu, Shih-Ying;Wu, Wen-Wei;
12:16:55 Superlattice of FexGe1-x nanodots and nanolayers for spintronics application
DOI:10.1088/0957-4484/25/50/505702 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Nie, Tianxiao;Kou, Xufeng;Tang, Jianshi;Fan, Yabin;Lang, Murong;Chang, Li-Te;Chu, Chia-Pu;He, Liang;Lee, Sheng-Wei;Xiu, Faxian;Zou, Jin;Wang, Kang L.;
12:16:56 Suppression of Void Formation in Si0.5Ge0.5 Alloy Nanowire during Ni Germanosilicidation
DOI:10.1002/adem.201300462 JN:ADVANCED ENGINEERING MATERIALS PY:2014
TC:0 AU: Li, Yida;Buddharaju, Kavitha;Wang, Xin-Peng;Lee, Sung-Joo;Thong, Thiam-Leong;
12:16:57 Ferromagnetic Si/Mn(27)Si(47)core/shell nanowire arrays
DOI:10.1063/1.3548939 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Liu, Hailong;She, Guangwei;Ling, Shiting;Mu, Lixuan;Shi, Wensheng;
12:16:58 Growth of single-crystalline cobalt silicide nanowires with excellent physical properties
DOI:10.1063/1.3643007 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Liang, Yu-Hsin;Yu, Shih-Ying;Hsin, Cheng-Lun;Huang, Chun-Wei;Wu, Wen-Wei;
12:16:59 Growth of MnSi1.7 Layers on MnSi Substrate by Molten Salt Method
DOI:10.1007/s11664-013-2744-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Li, Wen;Ishikawa, Daisuke;Hu, Junhua;Tatsuoka, Hirokazu;
12:16:60 Direct growth of beta-FeSi2 nanowires with infrared emission, ferromagnetism at room temperature and high magnetoresistance via a spontaneous chemical reaction method
DOI:10.1039/c1jm10232j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:12 AU: Hung, Shih-Wei;Yeh, Ping-Hung;Chu, Li-Wei;Chen, Chii-Dong;Chou, Li-Jen;Wu, Yi-Jen;Chen, Lih-Juann;
12:16:61 Phase-controlled synthesis of nickel silicide nanostructures
DOI:10.1016/j.materresbull.2012.06.017 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Fan, Xing;Zhang, Hui;Du, Ning;Yang, Deren;
12:16:62 The Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowires
DOI:10.1021/nl201037m JN:NANO LETTERS PY:2011
TC:11 AU: Lu, Kuo-Chang;Wu, Wen-Wei;Ouyang, Hao;Lin, Yung-Chen;Huang, Yu;Wang, Chun-Wen;Wu, Zheng-Wei;Huang, Chun-Wei;Chen, Lih J.;Tu, K. N.;
12:16:63 Domain Wall Motion in Synthetic Co2Si Nanowires
DOI:10.1021/nl204510p JN:NANO LETTERS PY:2012
TC:4 AU: Liu, Gang;Lin, Yung-Chen;Liao, Lei;Liu, Lixin;Chen, Yu;Liu, Yuan;Weiss, Nathan O.;Zhou, Hailong;Huang, Yu;Duan, Xiangfeng;
12:16:64 Scaling the anomalous Hall effect: A connection between transport and magnetism
DOI:10.1103/PhysRevB.82.144424 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Jiang, Wanjun;Zhou, X. Z.;Williams, Gwyn;
12:16:65 Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices
DOI:10.1021/nn202524j JN:ACS NANO PY:2011
TC:5 AU: Mongillo, Massimo;Spathis, Panayotis;Katsaros, Georgios;Gentile, Pascal;Sanquer, Marc;De Franceschi, Silvano;
12:16:66 Field emission properties of single crystal chromium disilicide nanowires
DOI:10.1063/1.4773105 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Valentin, L. A.;Carpena-Nunez, J.;Yang, D.;Fonseca, L. F.;
12:16:67 Electrodeposition and Characterization of Bismuth Telluride Nanowires
DOI:10.1007/s11664-009-1001-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:5 AU: Frantz, C.;Stein, N.;Gravier, L.;Granville, S.;Boulanger, C.;
12:16:68 Field emission of comb-like chromium disilicide nanowires prepared by an in situ chloride-generated route
DOI:10.1007/s00339-011-6343-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:4 AU: Hu, Yemin;Hu, Zheng;Yu, Leshu;Li, Ying;Zhu, Mingyuan;Bai, Qin;
12:16:69 Influence of substrate treatment on the growth of advanced core-shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires
DOI:10.1016/j.jallcom.2014.07.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Thabethe, Sibongiseni;Arendse, Christopher J.;Mwakikunga, Bonex W.;
12:16:70 First-principles analyses of unusual ferromagnetism observed in CrSi2(core)/SiO2(shell) nanocables
DOI:10.1063/1.4795848 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Lee, Cheng-Tse;Li, Tzu-Yuan;Chiou, Shian-Haw;Lo, Shen-Chuan;Han, You-Hong;Ouyang, Hao;
12:16:71 Application of in situ chloride-generated route to Ti5Si3 nanowires from and on Si substrate
DOI:10.1016/j.matlet.2012.01.053 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Yu, Leshu;Lv, Yingying;Zhang, Xiaolan;Wang, Huizhen;
12:16:72 Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts
DOI:10.1016/j.tsf.2013.10.017 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Deng, Yunsheng;Nakatsuka, Osamu;Yokoi, Jun;Taoka, Noriyuki;Zaima, Shigeaki;
12:16:73 Syntheses and structural Characterizations of CrSi2 Nanostructures using Si Substrates under CrCl2 vapor (vol 365, pg 11, 2013)
DOI:10.1016/j.jcrysgro.2013.01.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Li, Wen;Meng, Erchao;Matsushita, Tomoji;Oda, Shingo;Ishikawa, Daisuke;Nakane, Kaito;Hu, Junhua;Guan, Shaokang;Ishida, Akihiro;Tatsuoka, Hirokazu;
12:16:74 Texture analysis of manganese-germanide/germanium nanowire heterostructures by high resolution electron microscopy and diffraction
DOI:10.1557/jmr.2011.109 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:1 AU: Hemesath, E. R.;Lensch-Falk, J. L.;Lauhon, L. J.;
12:16:75 Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation
DOI:10.1016/j.materresbull.2012.08.042 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Liu, Hailong;She, Guangwei;Mu, Lixuan;Shi, Wensheng;
12:16:76 Ni-Silicide growth kinetics in Si and Si/SiO2 core/shell nanowires (vol 22, 365305, 2011)
DOI:10.1088/0957-4484/22/46/469601 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Ogata, K.;Sutter, E.;Zhu, X.;Hofmann, S.;
12:16:77 Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures
DOI:10.1021/acs.nanolett.5b01748 JN:NANO LETTERS PY:2015
TC:0 AU: Kral, S.;Zeiner, C.;Stoeger-Pollach, M.;Bertagnolli, E.;den Hertog, M. I.;Lopez-Haro, M.;Robin, E.;El Hajraoui, K.;Lugstein, A.;
12:17:1 Elementary Processes in Nanowire Growth
DOI:10.1021/nl1027815 JN:NANO LETTERS PY:2011
TC:62 AU: Schwarz, K. W.;Tersoff, J.;
12:17:2 Growth, Defect Formation, and Morphology Control of Germanium-Silicon Semiconductor Nanowire Heterostructures
DOI:10.1021/nl202126q JN:NANO LETTERS PY:2011
TC:48 AU: Dayeh, Shadi A.;Wang, Jian;Li, Nan;Huang, Jian Yu;Gin, Aaron V.;Picraux, S. Thomas;
12:17:3 Interplay between Defect Propagation and Surface Hydrogen in Silicon Nanowire Kinking Superstructures
DOI:10.1021/nn500598d JN:ACS NANO PY:2014
TC:3 AU: Shin, Naechul;Chi, Miaofang;Filler, Michael A.;
12:17:4 Modulation of Thermal Conductivity in Kinked Silicon Nanowires: Phonon Interchanging and Pinching Effects
DOI:10.1021/nl400127q JN:NANO LETTERS PY:2013
TC:12 AU: Jiang, Jin-Wu;Yang, Nuo;Wang, Bing-Shen;Rabczuk, Timon;
12:17:5 Design and Synthesis of Diverse Functional Kinked Nanowire Structures for Nanoelectronic Bioprobes
DOI:10.1021/nl304435z JN:NANO LETTERS PY:2013
TC:37 AU: Xu, Lin;Jiang, Zhe;Qing, Quan;Mai, Liqiang;Zhang, Qingjie;Lieber, Charles M.;
12:17:6 Controlled Synthesis of Kinked Ultrathin ZnS Nanorods/Nanowires Triggered by Chloride Ions: A Case Study
DOI:10.1002/smll.201302656 JN:SMALL PY:2014
TC:9 AU: Zhuang, Tao-Tao;Yu, Pan;Fan, Feng-Jia;Wu, Liang;Liu, Xiao-Jing;Yu, Shu-Hong;
12:17:7 Silicon Nanowire Polytypes: Identification by Raman Spectroscopy, Generation Mechanism, and Misfit Strain in Homostructures
DOI:10.1021/nn2031337 JN:ACS NANO PY:2011
TC:24 AU: Lopez, Francisco J.;Givan, Uri;Connell, Justin G.;Lauhon, Lincoln J.;
12:17:8 Spreading of Liquid AuSi on Vapor-Liquid Solid-Grown Si Nanowires
DOI:10.1021/nl100249j JN:NANO LETTERS PY:2010
TC:30 AU: Madras, Prashanth;Dailey, Eric;Drucker, Jeff;
12:17:9 The Importance of the Radial Growth in the Faceting of Silicon Nanowires
DOI:10.1021/nl904081g JN:NANO LETTERS PY:2010
TC:35 AU: Oehler, F.;Gentile, P.;Baron, T.;Ferret, P.;Den Hertog, M.;Rouviere, J.;
12:17:10 Chemical Control of Semiconductor Nanowire Kinking and Superstructure
DOI:10.1021/nl204065p JN:NANO LETTERS PY:2012
TC:23 AU: Musin, Ildar R.;Filler, Michael A.;
12:17:11 Controlling Silicon Nanowire Growth Direction via Surface Chemistry
DOI:10.1021/nl300461a JN:NANO LETTERS PY:2012
TC:27 AU: Shin, Naechul;Filler, Michael A.;
12:17:12 Geometrical Frustration in Nanowire Growth
DOI:10.1103/PhysRevLett.107.265502 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:22 AU: Schwarz, K. W.;Tersoff, J.;Kodambaka, S.;Chou, Y. -C.;Ross, F. M.;
12:17:13 Origin of Polytype Formation in VLS-Grown Ge Nanowires through Defect Generation and Nanowire Kinking
DOI:10.1021/nl402117b JN:NANO LETTERS PY:2013
TC:8 AU: Jeon, Nari;Dayeh, Shadi A.;Lauhon, Lincoln J.;
12:17:14 Rational Defect Introduction in Silicon Nanowires
DOI:10.1021/nl3042728 JN:NANO LETTERS PY:2013
TC:11 AU: Shin, Naechul;Chi, Miaofang;Howe, Jane Y.;Filler, Michael A.;
12:17:15 Strategies To Control Morphology in Hybrid Group III-V/Group IV Heterostructure Nanowires
DOI:10.1021/nl303660h JN:NANO LETTERS PY:2013
TC:27 AU: Hillerich, Karla;Dick, Kimberly A.;Wen, Cheng-Yen;Reuter, Mark C.;Kodambaka, Suneel;Ross, Frances M.;
12:17:16 Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties
DOI:10.1103/PhysRevB.81.115403 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Xu, Tao;Nys, Jean Philippe;Addad, Ahmed;Lebedev, Oleg I.;Urbieta, Ana;Salhi, Billel;Berthe, Maxime;Grandidier, Bruno;Stievenard, Didier;
12:17:17 Mechanical oscillation of kinked silicon nanowires: A natural nanoscale spring
DOI:10.1063/1.4799029 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Jiang, Jin-Wu;Rabczuk, Timon;
12:17:18 Radius selection and droplet unpinning in vapor-liquid-solid-grown nanowires
DOI:10.1063/1.3434403 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Roper, S. M.;Anderson, A. M.;Davis, S. H.;Voorhees, P. W.;
12:17:19 Size-sensitive Young's modulus of kinked silicon nanowires
DOI:10.1088/0957-4484/24/18/185702 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Jiang, Jin-Wu;Zhao, Jun-Hua;Rabczuk, Timon;
12:17:20 Multiplicity of Steady Modes of Nanowire Growth
DOI:10.1021/nl203864d JN:NANO LETTERS PY:2012
TC:13 AU: Schwarz, K. W.;Tersoff, J.;
12:17:21 Nonaxisymmetric droplet unpinning in vapor-liquid-solid-grown nanowires
DOI:10.1063/1.4821111 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Muralidharan, Srevatsan;Voorhees, Peter W.;Davis, Stephen H.;
12:17:22 Real-Time Observation of Collector Droplet Oscillations during Growth of Straight Nanowires
DOI:10.1021/nl404159x JN:NANO LETTERS PY:2014
TC:4 AU: Kolibal, Miroslav;Vystavel, Tomas;Varga, Peter;Sikola, Tomas;
12:17:23 Au on vapor-liquid-solid grown Si nanowires: Spreading of liquid AuSi from the catalytic seed
DOI:10.1063/1.3487971 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Dailey, Eric;Madras, Prashanth;Drucker, Jeff;
12:17:24 Silicon nanowires: Diameter dependence of growth rate and delay in growth
DOI:10.1063/1.3373546 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Dhalluin, F.;Baron, T.;Ferret, P.;Salem, B.;Gentile, P.;Harmand, J. -C.;
12:17:25 Kinking-Induced Structural Evolution of Metal Oxide Nanowires into Single-Crystalline Nanorings
DOI:10.1021/nn101386c JN:ACS NANO PY:2010
TC:17 AU: Yan, Chaoyi;Singh, Nandan;Lee, Pooi See;
12:17:26 Sidewall Morphology-Dependent Formation of Multiple Twins in Si Nanowires
DOI:10.1021/nn4036798 JN:ACS NANO PY:2013
TC:1 AU: Shin, Naechul;Chi, Miaofang;Filler, Michael A.;
12:17:27 Composition and growth direction control of epitaxial vapor-liquid-solid-grown SiGe nanowires
DOI:10.1063/1.3497079 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Dailey, Eric;Madras, Prashanth;Drucker, Jeff;
12:17:28 Stability and topological transformations of liquid droplets on vapor-liquid-solid nanowires
DOI:10.1063/1.3676451 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Schwalbach, Edwin J.;Davis, Stephen H.;Voorhees, Peter W.;Warren, James A.;Wheeler, Daniel;
12:17:29 Liquid droplet dynamics and complex morphologies in vapor-liquid-solid nanowire growth
DOI:10.1557/jmr.2011.96 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:5 AU: Schwalbach, E. J.;Davis, S. H.;Voorhees, P. W.;Wheeler, D.;Warren, J. A.;
12:17:30 Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
DOI:10.1088/0957-4484/23/11/115603 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Kim, Jung Hyuk;Moon, So Ra;Kim, Yong;Chen, Zhi Gang;Zou, Jin;Choi, Duk Yong;Joyce, Hannah J.;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;
12:17:31 Guided VLS Growth of Epitaxial Lateral Si Nanowires
DOI:10.1021/nl401962q JN:NANO LETTERS PY:2013
TC:8 AU: Rathi, Somilkumar J.;Smith, David J.;Drucker, Jeff;
12:17:32 Droplet Dynamics in Controlled InAs Nanowire Interconnections
DOI:10.1021/nl400820w JN:NANO LETTERS PY:2013
TC:9 AU: Dalacu, Dan;Kam, Alicia;Austing, D. Guy;Poole, Philip J.;
12:17:33 Catalyst Composition and Impurity-Dependent Kinetics of Nanowire Heteroepitaxy
DOI:10.1021/nn402208p JN:ACS NANO PY:2013
TC:4 AU: Gamalski, Andrew D.;Perea, Daniel E.;Yoo, Jinkyoung;Li, Nan;Olszta, Matthew J.;Colby, Robert;Schreiber, Daniel K.;Ducati, Caterina;Picraux, S. Tom;Hofmann, Stephan;
12:17:34 In-situ observation of < 110 > oriented Ge nanowire growth and associated collector droplet behavior
DOI:10.1063/1.3647774 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kolibal, Miroslav;Vystavel, Tomas;Novak, Libor;Mach, Jindrich;Sikola, Tomas;
12:17:35 Vapor-liquid-solid growth of serrated GaN nanowires: shape selection driven by kinetic frustration
DOI:10.1039/c3tc31776e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Ma, Zheng;McDowell, Dillon;Panaitescu, Eugen;Davydov, Albert V.;Upmanyu, Moneesh;Menon, Latika;
12:17:36 Hidden defects in silicon nanowires
DOI:10.1088/0957-4484/23/2/025701 JN:NANOTECHNOLOGY PY:2012
TC:11 AU: den Hertog, M. I.;Cayron, C.;Gentile, P.;Dhalluin, F.;Oehler, F.;Baron, T.;Rouviere, J. L.;
12:17:37 Capillary Instability in Nanowire Geometries
DOI:10.1021/nl501214p JN:NANO LETTERS PY:2014
TC:0 AU: Frolov, Timofey;Carter, W. Craig;Asta, Mark;
12:17:38 Faceting mechanisms of Si nanowires and gold spreading
DOI:10.1007/s10853-011-5939-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:5 AU: Vincent, Laetitia;Boukhicha, Rym;Gardes, Cyrille;Renard, Charles;Yam, Vy;Fossard, Frederic;Patriarche, Gilles;Bouchier, Daniel;
12:17:39 Jumping-Catalyst Dynamics in Nanowire Growth
DOI:10.1103/PhysRevLett.113.055501 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Schwarz, K. W.;Tersoff, J.;Kodambaka, S.;Ross, F. M.;
12:17:40 Twin Plane Re-entrant Mechanism for Catalytic Nanowire Growth
DOI:10.1021/nl404244u JN:NANO LETTERS PY:2014
TC:11 AU: Gamalski, Andrew D.;Voorhees, Peter W.;Ducati, Caterina;Sharma, Renu;Hofmann, Stephan;
12:17:41 Catalyst Incorporation at Defects during Nanowire Growth
DOI:10.1021/nl203259f JN:NANO LETTERS PY:2012
TC:13 AU: Hemesath, Eric R.;Schreiber, Daniel K.;Gulsoy, Emine B.;Kisielowski, Christian F.;Petford-Long, Amanda K.;Voorhees, Peter W.;Lauhon, Lincoln J.;
12:17:42 Gold nanocluster distribution on faceted and kinked Si nanowires
DOI:10.1016/j.tsf.2011.10.124 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Boukhicha, Rym;Vincent, Laetitia;Renard, Charles;Gardes, Cyrille;Yam, Vy;Fossard, Frederic;Patriarche, Gilles;Jabeen, Fauzia;Bouchier, Daniel;
12:17:43 Controlled faceting in < 110 > germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth
DOI:10.1063/1.4714765 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kolibal, Miroslav;Kalousek, Radek;Vystavel, Tomas;Novak, Libor;Sikola, Tomas;
12:17:44 MBE growth of germanium nanowires along < 1 1 0 >
DOI:10.1016/j.jcrysgro.2014.08.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Schmidtbauer, Jan;Bansen, Roman;Heimburger, Robert;Teubner, Thomas;Boeck, Torsten;
12:17:45 Twinning-induced kinking of Sb-doped ZnO nanowires
DOI:10.1088/0957-4484/21/43/435602 JN:NANOTECHNOLOGY PY:2010
TC:7 AU: Li, Su;Zhang, Xiaozhong;Zhang, Lihuan;Gao, Min;
12:17:46 Atomic Structural Analysis of Nanowire Defects and Polytypes Enabled Through Cross-Sectional Lattice Imaging
DOI:10.1002/smll.201102404 JN:SMALL PY:2012
TC:7 AU: Hemesath, Eric R.;Schreiber, Daniel K.;Kisielowski, Christian F.;Petford-Long, Amanda K.;Lauhon, Lincoln J.;
12:17:47 Rocking chair defect generation in nanowire growth
DOI:10.1063/1.4739948 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Dayeh, Shadi A.;Liu, Xiao Hue;Dai, Xing;Huang, Jian Yu;Picraux, S. T.;Soci, Cesare;
12:17:48 Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope
DOI:10.1063/1.3518703 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Gu, Lin;Yu, Yan;Sigle, Wilfried;Usami, Noritaka;Tsukimoto, Susumu;Maier, Joachim;Ikuhara, Yuichi;van Aken, Peter A.;
12:17:49 Gold coverage and faceting of MBE grown silicon nanowires
DOI:10.1016/j.jcrysgro.2013.08.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: David, Thomas;Roussel, Luc;Neisius, Thomas;Cabie, Martiane;Gailhanou, Marc;Alfonso, Claude;
12:17:50 Characterization of epitaxially grown indium islands on Si(111)
DOI:10.1116/1.4764049 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:2 AU: Lunceford, Chad;Drucker, Jeff;
12:17:51 Morphology of the Au-Si interface formed during solidification of liquid Au/Si(111) islands
DOI:10.1116/1.3661996 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Jungwirth, Nick;Dailey, Eric;Madras, Prashanth;Drucker, Jeff;
12:17:52 Au Transport in Catalyst Coarsening and Si Nanowire Formation
DOI:10.1021/nl501582q JN:NANO LETTERS PY:2014
TC:2 AU: Kim, B. J.;Tersoff, J.;Kodambaka, S.;Jang, Ja-Soon;Stach, E. A.;Ross, F. M.;
12:17:53 Irreversible thermodynamic basis of phase field models
DOI:10.1080/14786435.2010.491805 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:5 AU: Sekerka, Robert F.;
12:17:54 Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)
DOI:10.1103/PhysRevB.83.205303 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Kruegener, J.;Osten, H. J.;Fissel, A.;
12:17:55 Importance of kinetics effects in the growth of germanium nanowires by vapour-liquid-solid Molecular Beam Epitaxy
DOI:10.1016/j.jcrysgro.2010.11.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Porret, C.;Devillers, T.;Jain, A.;Dujardin, R.;Barski, A.;
12:17:56 Perturbation Solution of the Shape of a Nonaxisymmetric Sessile Drop
DOI:10.1021/la101168b JN:LANGMUIR PY:2010
TC:5 AU: Prabhala, Bharadwaj;Panchagnula, Mahesh;Subramanian, Venkat R.;Vedantam, Srikanth;
12:17:57 Excelling under strain: band engineering in nanomaterials
DOI:10.1088/0957-4484/24/33/330201 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Demming, Anna;
12:17:58 Influence of ambient gas on the growth kinetics of Si nanocones
DOI:10.1063/1.3494111 JN:APPLIED PHYSICS LETTERS PY:2010
TC:0 AU: Wan, Y. T.;Sha, J.;Wang, Z. L.;Wang, Y. W.;
12:17:59 Germanium nanowire growth controlled by surface diffusion effects
DOI:10.1063/1.4737004 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Schmidtbauer, Jan;Bansen, Roman;Heimburger, Robert;Teubner, Thomas;Boeck, Torsten;Fornari, Roberto;
12:17:60 Optical properties of serrated GaN nanowires
DOI:10.1364/OME.4.001373 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Patra, Anuradha;Ma, Zheng;Menon, Latika;Gopal, Achanta Venu;
12:18:1:1 Hole transport and photoluminescence in Mg-doped InN
DOI:10.1063/1.3427564 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:37 AU: Miller, N.;Ager, J. W., III;Smith, H. M., III;Mayer, M. A.;Yu, K. M.;Haller, E. E.;Walukiewicz, W.;Schaff, W. J.;Gallinat, C.;Koblmueller, G.;Speck, J. S.;
12:18:1:2 Mg doped InN and confirmation of free holes in InN
DOI:10.1063/1.3543625 JN:APPLIED PHYSICS LETTERS PY:2011
TC:29 AU: Wang, K.;Miller, N.;Iwamoto, R.;Yamaguchi, T.;Mayer, M. A.;Araki, T.;Nanishi, Y.;Yu, K. M.;Haller, E. E.;Walukiewicz, W.;Ager, J. W., III;
12:18:1:3 Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
DOI:10.1103/PhysRevB.84.235302 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Bierwagen, Oliver;Choi, Soojeong;Speck, James S.;
12:18:1:4 Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN
DOI:10.1103/PhysRevB.84.075315 JN:PHYSICAL REVIEW B PY:2011
TC:17 AU: Miller, Nate;Haller, Eugene E.;Koblmueller, Gregor;Gallinat, Chad;Speck, James S.;Schaff, William J.;Hawkridge, Michael E.;Yu, Kin Man;Ager, Joel W., III;
12:18:1:5 Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer
DOI:10.1103/PhysRevB.85.165205 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Bierwagen, Oliver;Choi, Soojeong;Speck, James S.;
12:18:1:6 Effect of Mg doping on the structural and free-charge carrier properties of InN films
DOI:10.1063/1.4871975 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Xie, M. -Y.;Ben Sedrine, N.;Schoeche, S.;Hofmann, T.;Schubert, M.;Hung, L.;Monemar, B.;Wang, X.;Yoshikawa, A.;Wang, K.;Araki, T.;Nanishi, Y.;Darakchieva, V.;
12:18:1:7 Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction
DOI:10.1063/1.3522892 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Ma, N.;Wang, X. Q.;Xu, F. J.;Tang, N.;Shen, B.;Ishitani, Y.;Yoshikawa, A.;
12:18:1:8 Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
DOI:10.1063/1.3327333 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Darakchieva, V.;Lorenz, K.;Barradas, N. P.;Alves, E.;Monemar, B.;Schubert, M.;Franco, N.;Hsiao, C. L.;Chen, L. C.;Schaff, W. J.;Tu, L. W.;Yamaguchi, T.;Nanishi, Y.;
12:18:1:9 Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy
DOI:10.1063/1.4826094 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Imura, M.;Tsuda, S.;Nagata, T.;Takeda, H.;Liao, M. Y.;Yang, A. L.;Yamashita, Y.;Yoshikawa, H.;Koide, Y.;Kobayashi, K.;Yamaguchi, T.;Kaneko, M.;Uematsu, N.;Wang, K.;Araki, T.;Nanishi, Y.;
12:18:1:10 Electrical and optical properties of p-type InN
DOI:10.1063/1.3670038 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Mayer, Marie A.;Choi, Soojeong;Bierwagen, Oliver;Smith, Holland M., III;Haller, Eugene E.;Speck, James S.;Walukiewicz, Wladek;
12:18:1:11 PN junction rectification in electrolyte gated Mg-doped InN
DOI:10.1063/1.3634049 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Alarcon-Llado, E.;Mayer, M. A.;Boudouris, B. W.;Segalman, R. A.;Miller, N.;Yamaguchi, T.;Wang, K.;Nanishi, Y.;Haller, E. E.;Ager, J. W.;
12:18:1:12 Hole mobility in wurtzite InN
DOI:10.1063/1.3592257 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Ma, N.;Wang, X. Q.;Liu, S. T.;Chen, G.;Pan, J. H.;Feng, L.;Xu, F. J.;Tang, N.;Shen, B.;
12:18:1:13 Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
DOI:10.1063/1.4772625 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Schoeche, S.;Hofmann, T.;Darakchieva, V.;Ben Sedrine, N.;Wang, X.;Yoshikawa, A.;Schubert, M.;
12:18:1:14 Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films
DOI:10.1063/1.3680102 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Hurni, Christophe A.;Choi, Soojeong;Bierwagen, Oliver;Speck, James S.;
12:18:1:15 Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities
DOI:10.1063/1.4710529 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Dmowski, L. H.;Baj, M.;Konczewicz, L.;Suski, T.;Maude, D. K.;Grzanka, S.;Wang, X. Q.;Yoshikawa, A.;
12:18:1:16 Detecting p-type conduction in Ba-doped InN
DOI:10.1063/1.4790281 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Xie, Q. Y.;Xie, W. M.;Wang, J. L.;Zhu, H. P.;Yang, J. H.;Sun, L.;Wu, X. S.;
12:18:1:17 Dependence of Mg acceptor levels in InN on doping density and temperature
DOI:10.1063/1.3656990 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Fujiwara, Masayuki;Ishitani, Yoshihiro;Wang, Xinqiang;Kusakabe, Kazuhide;Yoshikawa, Akihiko;
12:18:1:18 Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.4795811 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:2 AU: Choi, Soojeong;Wu, Feng;Bierwagen, Oliver;Speck, James S.;
12:18:1:19 Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements
DOI:10.1063/1.3658626 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Ma, N.;Wang, X. Q.;Liu, S. T.;Feng, L.;Chen, G.;Xu, F. J.;Tang, N.;Lu, L. W.;Shen, B.;
12:18:1:20 Ab-initio study of Mg-doped InN(0001) surface
DOI:10.1063/1.4774295 JN:AIP ADVANCES PY:2013
TC:1 AU: Belabbes, A.;Furthmueller, J.;Bechstedt, F.;
12:18:1:21 Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
DOI:10.1063/1.4852175 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Chen, Z. Y.;Yuan, H. T.;Wang, X. Q.;Ma, N.;Zhang, Y. W.;Shimotani, H.;Qin, Z. X.;Shen, B.;Iwasa, Y.;
12:18:1:22 P-type InGaN across the entire alloy composition range
DOI:10.1063/1.4795718 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Wang, K.;Araki, T.;Yu, K. M.;Katsuki, T.;Mayer, M. A.;Alarcon-Llado, E.;Ager, J. W., III;Walukiewicz, W.;Nanishi, Y.;
12:18:1:23 Temperature sensitive photoconductivity observed in InN layers
DOI:10.1063/1.4793190 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Guo, Lei;Wang, Xinqiang;Feng, Li;Zheng, Xiantong;Chen, Guang;Yang, Xuelin;Xu, Fujun;Tang, Ning;Lu, Liwu;Ge, Weikun;Shen, Bo;
12:18:1:24 Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy
DOI:10.1063/1.4812570 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Imura, Masataka;Tsuda, Shunsuke;Nagata, Takahiro;Takeda, Hiroyuki;Liao, Meiyong;Yang, AnLi;Yamashita, Yoshiyuki;Yoshikawa, Hideki;Koide, Yasuo;Kobayashi, Keisuke;Yamaguchi, Tomohiro;Kaneko, Masamitsu;Uematsu, Nao;Araki, Tsutomu;Nanishi, Yasushi;
12:18:1:25 Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg
DOI:10.1063/1.4875482 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Dmowski, L. H.;Baj, M.;Wang, X. Q.;Zheng, X. T.;Ma, D. Y.;Konczewicz, L.;Suski, T.;
12:18:1:26 Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry
DOI:10.1016/j.tsf.2014.01.051 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Schoehe, S.;Hofmann, T.;Darakchieva, V.;Wang, X.;Yoshikawa, A.;Wang, K.;Araki, T.;Nanishi, Y.;Schubert, M.;
12:18:1:27 Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
DOI:10.1063/1.3642969 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Darakchieva, V.;Lorenz, K.;Xie, M. -Y.;Alves, E.;Hsiao, C. L.;Chen, L. C.;Tu, L. W.;Schaff, W. J.;Yamaguchi, T.;Nanishi, Y.;
12:18:1:28 MOVPE growth of high quality p-type InGaN with intermediate In compositions
DOI:10.1016/j.jcrysgro.2010.10.217 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Sasamoto, K.;Hotta, T.;Sugita, K.;Bhuiyan, A. G.;Hashimoto, A.;Yamamoto, A.;Kinoshita, K.;Kohji, Y.;
12:18:2:1 Tuning the Surface Charge Properties of Epitaxial InN Nanowires
DOI:10.1021/nl300476d JN:NANO LETTERS PY:2012
TC:33 AU: Zhao, S.;Fathololoumi, S.;Bevan, K. H.;Liu, D. P.;Kibria, M. G.;Li, Q.;Wang, G. T.;Guo, Hong;Mi, Z.;
12:18:2:2 Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
DOI:10.1103/PhysRevB.85.245313 JN:PHYSICAL REVIEW B PY:2012
TC:10 AU: Zhao, S.;Mi, Z.;Kibria, M. G.;Li, Q.;Wang, G. T.;
12:18:2:3 Photoluminescence properties of Mg-doped InN nanowires
DOI:10.1063/1.4831895 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Zhao, Songrui;Liu, Xuedong;Mi, Zetian;
12:18:2:4 Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire
DOI:10.1002/adfm.201000739 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:27 AU: Chang, Yi-Lu;Mi, Zetian;Li, Feng;
12:18:2:5 Probing the electrical transport properties of intrinsic InN nanowires
DOI:10.1063/1.4792699 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Zhao, S.;Salehzadeh, O.;Alagha, S.;Kavanagh, K. L.;Watkins, S. P.;Mi, Z.;
12:18:2:6 p-Type InN Nanowires
DOI:10.1021/nl4030819 JN:NANO LETTERS PY:2013
TC:18 AU: Zhao, S.;Le, B. H.;Liu, D. P.;Liu, X. D.;Kibria, M. G.;Szkopek, T.;Guo, H.;Mi, Z.;
12:18:2:7 Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
DOI:10.1063/1.4904271 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Binh Huy Le;Zhao, Songrui;Nhung Hong Tran;Mi, Zetian;
12:18:2:8 Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
DOI:10.1103/PhysRevB.82.125319 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Segura-Ruiz, J.;Molina-Sanchez, A.;Garro, N.;Garcia-Cristobal, A.;Cantarero, A.;Iikawa, F.;Denker, C.;Malindretos, J.;Rizzi, A.;
12:18:2:9 Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study
DOI:10.1088/0957-4484/23/41/415706 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Zhao, S.;Wang, Q.;Mi, Z.;Fathololoumi, S.;Gonzalez, T.;Andrews, M. P.;
12:18:2:10 Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature
DOI:10.1063/1.4857535 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Nhung Hong Tran;Le, Binh Huy;Fan, Shizhao;Zhao, Songrui;Mi, Zetian;Schmidt, Benjamin A.;Savard, Michel;Gervais, Guillaume;Butcher, Kenneth Scott A.;
12:18:3:1 Direct measurement of the band gap and Fermi level position at InN(11(2)over-bar0)
DOI:10.1063/1.3553022 JN:APPLIED PHYSICS LETTERS PY:2011
TC:25 AU: Ebert, Ph.;Schaafhausen, S.;Lenz, A.;Sabitova, A.;Ivanova, L.;Daehne, M.;Hong, Y-L;Gwo, S.;Eisele, H.;
12:18:3:2 Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture
DOI:10.1103/PhysRevB.84.205304 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Belabbes, A.;Furthmueller, J.;Bechstedt, F.;
12:18:3:3 N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
DOI:10.1063/1.4775736 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Himmerlich, M.;Knuebel, A.;Aidam, R.;Kirste, L.;Eisenhardt, A.;Krischok, S.;Pezoldt, J.;Schley, P.;Sakalauskas, E.;Goldhahn, R.;Felix, R.;Manuel, J. M.;Morales, F. M.;Carvalho, D.;Ben, T.;Garcia, R.;Koblmueller, G.;
12:18:3:4 Is electron accumulation universal at InN polar surfaces?
DOI:10.1063/1.3549874 JN:APPLIED PHYSICS LETTERS PY:2011
TC:27 AU: Kuo, Cheng-Tai;Lin, Shih-Chieh;Chang, Kai-Kuen;Shiu, Hung-Wei;Chang, Lo-Yueh;Chen, Chia-Hao;Tang, Shu-Jung;Gwo, Shangjr;
12:18:3:5 Surface states and electronic structure of polar and nonpolar InN - An in situ photoelectron spectroscopy study
DOI:10.1063/1.4810074 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Eisenhardt, A.;Krischok, S.;Himmerlich, M.;
12:18:3:6 Surface, bulk, and interface electronic properties of nonpolar InN
DOI:10.1063/1.3488821 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Linhart, W. M.;Veal, T. D.;King, P. D. C.;Koblmueller, G.;Gallinat, C. S.;Speck, J. S.;McConville, C. F.;
12:18:3:7 Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants
DOI:10.1103/PhysRevLett.109.247605 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:7 AU: Linhart, W. M.;Chai, J.;Morris, R. J. H.;Dowsett, M. G.;McConville, C. F.;Durbin, S. M.;Veal, T. D.;
12:18:3:8 Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates
DOI:10.1063/1.4863117 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Eisenhardt, A.;Reiss, S.;Krischok, S.;Himmerlich, M.;
12:18:3:9 Schottky and charge memory effects in InN nanodomains
DOI:10.1063/1.3651327 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Spyropoulos-Antonakakis, N.;Sarantopoulou, E.;Kollia, Z.;Drazic, G.;Kobe, S.;
12:18:3:10 Effect of edge threading dislocations on the electronic structure of InN
DOI:10.1063/1.3553772 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Kalesaki, E.;Kioseoglou, J.;Lymperakis, L.;Komninou, Ph.;Karakostas, Th.;
12:18:3:11 Sulfur passivation of surface electrons in highly Mg-doped InN
DOI:10.1063/1.4820483 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Linhart, W. M.;Chai, J.;McConville, C. F.;Durbin, S. M.;Veal, T. D.;
12:18:3:12 Effects of (NH4)(2)S-x treatment on indium nitride surfaces
DOI:10.1063/1.3318685 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Chang, Yuh-Hwa;Lu, Yen-Sheng;Hong, Yu-Liang;Kuo, Cheng-Tai;Gwo, Shangjr;Yeh, J. Andrew;
12:18:3:13 MBE growth and characterization of Mn-doped InN
DOI:10.1116/1.3687903 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Chai, Jessica H.;Myers, Thomas H.;Song, Young-Wook;Reeves, Roger J.;Linhart, Wojciech M.;Morris, Richard J. H.;Veal, Timothy D.;Dowsett, Mark G.;McConville, Christopher F.;Durbin, Steven M.;
12:18:3:14 Intrinsic bandgap of cleaved ZnO(11(2)over-bar0) surfaces
DOI:10.1063/1.4776674 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Sabitova, A.;Ebert, Ph.;Lenz, A.;Schaafhausen, S.;Ivanova, L.;Daehne, M.;Hoffmann, A.;Dunin-Borkowski, R. E.;Foerster, A.;Grandidier, B.;Eisele, H.;
12:18:3:15 Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation
DOI:10.1103/PhysRevB.86.245304 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;
12:18:3:16 Stable structure and effects of oxygen on InN (1 0 (1)over-bar 0) and (1 1 (2)over-bar 0) surfaces
DOI:10.1016/j.jcrysgro.2011.05.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Wang, Jianli;Bai, Dongmei;Tang, Gang;Wu, X. S.;Gu, Mingqiang;
12:18:4:1 Band gap of InxGa1-xN: A first principles analysis
DOI:10.1063/1.3592573 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Cesar, Mathieu;Ke, Youqi;Ji, Wei;Guo, Hong;Mi, Zetian;
12:18:4:2 Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities
DOI:10.1063/1.3303983 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Wang, X. Q.;Zhao, G. Z.;Zhang, Q.;Ishitani, Y.;Yoshikawa, A.;Shen, B.;
12:18:4:3 Large-Scale Cubic InN Nanocrystals by a Combined Solution- and Vapor-Phase Method under Silica Confinement
DOI:10.1021/ja209072v JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:7 AU: Chen, Zhuo;Li, Yanan;Cao, Chuanbao;Zhao, Songrui;Fathololoumi, Saeed;Mi, Zetian;Xu, Xingyan;
12:18:4:4 Terahertz electroluminescence of surface plasmons from nanostructured InN layers
DOI:10.1063/1.3425897 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Shubina, T. V.;Andrianov, A. V.;Zakhar'in, A. O.;Jmerik, V. N.;Soshnikov, I. P.;Komissarova, T. A.;Usikova, A. A.;Kop'ev, P. S.;Ivanov, S. V.;Shalygin, V. A.;Sofronov, A. N.;Firsov, D. A.;Vorob'ev, L. E.;Gippius, N. A.;Leymarie, J.;Wang, X.;Yoshikawa, Akihiko;
12:18:4:5 Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation
DOI:10.1063/1.4850755 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Meng, Xiuqing;Chen, Zhanghui;Chen, Zhuo;Wu, Fengmin;Li, Shu-Shen;Li, Jingbo;Wu, Junqiao;Wei, Su-Huai;
12:18:4:6 Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates
DOI:10.1557/jmr.2013.67 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Gao, Fangliang;Guan, Yunfang;Li, Jingling;Gao, Junning;Guo, Junqiu;Li, Guoqiang;
12:18:4:7 Mechanism for THz generation from InN micropyramid emitters
DOI:10.1063/1.3584785 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Xu, Guibao;Sun, Guan;Ding, Yujie J.;Zotova, Ioulia B.;Jamil, Muhammad;Ferguson, Ian T.;
12:18:5:1 Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy
DOI:10.1063/1.4824823 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Tangi, Malleswararao;Kuyyalil, Jithesh;Shivaprasad, S. M.;
12:18:5:2 Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
DOI:10.1063/1.3580254 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Kuyyalil, Jithesh;Tangi, Malleswararao;Shivaprasad, S. M.;
12:18:5:3 Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN
DOI:10.1063/1.4759449 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Kuyyalil, Jithesh;Tangi, Malleswararao;Shivaprasad, S. M.;
12:18:5:4 Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy
DOI:10.1063/1.4757031 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Tangi, Malleswararao;Kuyyalil, Jithesh;Shivaprasad, S. M.;
12:18:5:5 Room-temperature infrared photoluminescence from sputter-deposited InN films
DOI:10.1063/1.3485824 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Sasaoka, Takashi;Mori, Masaki;Miyazaki, Takayuki;Adachi, Sadao;
12:18:5:6 Nitrogen vacancies at InN (1100) surfaces: A theoretical study
DOI:10.1063/1.3409224 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Terentjevs, A.;Catellani, A.;Cicero, G.;
12:18:5:7 Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride
DOI:10.1063/1.3673839 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Butcher, Kenneth S. A.;Chen, Patrick P. -T.;Downes, James E.;
12:18:6:1 Electron cyclotron effective mass in indium nitride
DOI:10.1063/1.3304169 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Goiran, Michel;Millot, Marius;Poumirol, Jean-Marie;Gherasoiu, Iulian;Walukiewicz, Wladek;Leotin, Jean;
12:18:6:2 Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 x 2 transfer-matrix algebra
DOI:10.1063/1.4792259 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Katsidis, C. C.;Ajagunna, A. O.;Georgakilas, A.;
12:18:6:3 Identification of the main contributions to the conductivity of epitaxial InN
DOI:10.1103/PhysRevB.84.035205 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Komissarova, T. A.;Jmerik, V. N.;Ivanov, S. V.;Drachenko, O.;Wang, X.;Yoshikawa, A.;
12:18:6:4 Large magnetoresistance effect in InN epilayers
DOI:10.1103/PhysRevB.82.245204 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Komissarova, T. A.;Shakhov, M. A.;Jmerik, V. N.;Parfeniev, R. V.;Paturi, P.;Wang, X.;Yoshikawa, A.;Ivanov, S. V.;
12:18:6:5 Detection of metallic In nanoparticles in InGaN alloys
DOI:10.1063/1.3626039 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Komissarova, T. A.;Jmerik, V. N.;Ivanov, S. V.;Paturi, P.;
12:18:6:6 Electron cyclotron effective mass in indium nitride (vol 96, 052117, 2010)
DOI:10.1063/1.3557021 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Goiran, Michel;Millot, Marius;Poumirol, Jean-Marie;Gherasoiu, Iulian;Walukiewicz, Wladek;Leotin, Jean;
12:18:7:1 Molecular beam epitaxy of InN nanowires on Si
DOI:10.1016/j.jcrysgro.2015.07.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Sarwar, A. T. M. Golam;Carnevale, Santino D.;Kent, Thomas F.;Laskar, Masihhur R.;May, Brelon J.;Myers, Roberto C.;
12:18:7:2 Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy
DOI:10.1063/1.4892525 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Jing, Qiang;Wu, Guoguang;Zhang, Yuantao;Gao, Fubin;Cai, Xupu;Zhao, Yang;Li, Wancheng;Du, Guotong;
12:18:7:3 Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
DOI:10.1063/1.3596520 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Bhat, Thirumaleshwara N.;Kumar, Mahesh;Rajpalke, Mohana K.;Roul, Basanta;Krupanidhi, S. B.;Sinha, Neeraj;
12:18:7:4 Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy
DOI:10.1063/1.4809644 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Casallas-Moreno, Y. L.;Perez-Caro, M.;Gallardo-Hernandez, S.;Ramirez-Lopez, M.;Martinez-Velis, I.;Escobosa-Echavarria, A.;Lopez-Lopez, M.;
12:18:8:1 Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes
DOI:10.1063/1.3693150 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Wu, Guo-Guang;Li, Wan-Cheng;Shen, Chun-Sheng;Gao, Fu-Bin;Liang, Hong-Wei;Wang, Hui;Song, Li-Jun;Du, Guo-Tong;
12:18:8:2 Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
DOI:10.1063/1.4821204 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Seetoh, Ian P.;Soh, Chew Beng;Zhang, Li;Tung, Kar Hoo Patrick;Fitzgerald, Eugene A.;Chua, Soo Jin;
12:18:8:3 Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence
DOI:10.1063/1.4795793 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Seetoh, I. P.;Soh, C. B.;Fitzgerald, E. A.;Chua, S. J.;
12:18:9:1 Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
DOI:10.1063/1.3700720 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Wang, Shulong;Liu, Hongxia;Gao, Bo;Cai, Huimin;
12:18:9:2 An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride
DOI:10.1007/s00339-013-7798-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wang, Shulong;Liu, Hongxia;Song, Xin;Guo, Yulong;Yang, Zhaonian;
12:18:9:3 Hot electrons in wurtzite indium nitride
DOI:10.1063/1.3533981 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Masyukov, N. A.;Dmitriev, A. V.;
12:19:1:1 Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
DOI:10.1063/1.3455900 JN:APPLIED PHYSICS LETTERS PY:2010
TC:46 AU: Schulze, T. F.;Beushausen, H. N.;Leendertz, C.;Dobrich, A.;Rech, B.;Korte, L.;
12:19:1:2 Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
DOI:10.1063/1.3641899 JN:APPLIED PHYSICS LETTERS PY:2011
TC:37 AU: Descoeudres, A.;Barraud, L.;De Wolf, Stefaan;Strahm, B.;Lachenal, D.;Guerin, C.;Holman, Z. C.;Zicarelli, F.;Demaurex, B.;Seif, J.;Holovsky, J.;Ballif, C.;
12:19:1:3 The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
DOI:10.1063/1.3511737 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Descoeudres, A.;Barraud, L.;Bartlome, R.;Choong, G.;De Wolf, Stefaan;Zicarelli, F.;Ballif, C.;
12:19:1:4 Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy
DOI:10.1063/1.4798292 JN:APPLIED PHYSICS LETTERS PY:2013
TC:22 AU: Mews, Mathias;Schulze, Tim F.;Mingirulli, Nicola;Korte, Lars;
12:19:1:5 Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces
DOI:10.1103/PhysRevB.83.233301 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: De Wolf, Stefaan;Demaurex, Benedicte;Descoeudres, Antoine;Ballif, Christophe;
12:19:1:6 Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering
DOI:10.1063/1.4764529 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Demaurex, Benedicte;De Wolf, Stefaan;Descoeudres, Antoine;Holman, Zachary Charles;Ballif, Christophe;
12:19:1:7 Band lineup in amorphous/crystalline silicon heterojunctions and the impact of hydrogen microstructure and topological disorder
DOI:10.1103/PhysRevB.83.165314 JN:PHYSICAL REVIEW B PY:2011
TC:20 AU: Schulze, T. F.;Korte, L.;Ruske, F.;Rech, B.;
12:19:1:8 Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements
DOI:10.1063/1.3590254 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Leendertz, C.;Mingirulli, N.;Schulze, T. F.;Kleider, J. P.;Rech, B.;Korte, L.;
12:19:1:9 Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition
DOI:10.1063/1.3579540 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Schuttauf, Jan-Willem A.;van der Werf, Karine H. M.;Kielen, Inge M.;van Sark, Wilfried G. J. H. M.;Rath, Jatindra K.;Schropp, Ruud E. I.;
12:19:1:10 Efficient heterojunction solar cells on p-type crystal silicon wafers
DOI:10.1063/1.3284650 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Wang, Qi;Page, M. R.;Iwaniczko, E.;Xu, Yueqin;Roybal, L.;Bauer, R.;To, B.;Yuan, H. -C.;Duda, A.;Hasoon, F.;Yan, Y. F.;Levi, D.;Meier, D.;Branz, Howard M.;Wang, T. H.;
12:19:1:11 Atomic Structure of Interface States in Silicon Heterojunction Solar Cells
DOI:10.1103/PhysRevLett.110.136803 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:4 AU: George, B. M.;Behrends, J.;Schnegg, A.;Schulze, T. F.;Fehr, M.;Korte, L.;Rech, B.;Lips, K.;Rohrmueller, M.;Rauls, E.;Schmidt, W. G.;Gerstmann, U.;
12:19:1:12 Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments
DOI:10.1063/1.4811253 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Geissbuehler, Jonas;De Wolf, Stefaan;Demaurex, Benedicte;Seif, Johannes P.;Alexander, Duncan T. L.;Barraud, Loris;Ballif, Christophe;
12:19:1:13 High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon
DOI:10.1063/1.3662404 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Schuttauf, Jan-Willem A.;van der Werf, Karine H. M.;Kielen, Inge M.;van Sark, Wilfried G. J. H. M.;Rath, Jatindra K.;Schropp, Ruud E. I.;
12:19:1:14 Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction
DOI:10.1103/PhysRevB.85.113302 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: De Wolf, Stefaan;Ballif, Christophe;Kondo, Michio;
12:19:1:15 Enhanced passivation at amorphous/crystalline silicon interface and suppressed Schottky barrier by deposition of microcrystalline silicon emitter layer in silicon heterojunction solar cells
DOI:10.1063/1.4868726 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ghahfarokhi, Omid Madani;von Maydell, Karsten;Agert, Carsten;
12:19:1:16 Doping type and thickness dependence of band offsets at the amorphous/crystalline silicon heterojunction
DOI:10.1063/1.3559296 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Korte, L.;Schmidt, M.;
12:19:1:17 Is light-induced degradation of a-Si:H/c-Si interfaces reversible?
DOI:10.1063/1.4885501 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: El Mhamdi, El Mahdi;Holovsky, Jakub;Demaurex, Benedicte;Ballif, Christophe;De Wolf, Stefaan;
12:19:1:18 High quality amorphous-crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition
DOI:10.1016/j.jnoncrysol.2012.08.015 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Mahtani, Pratish;Leong, Keith R.;Jovet, Bastien;Yeghikyan, Davit;Kherani, Nazir P.;
12:19:1:19 Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy
DOI:10.1063/1.4810900 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Ge, Jia;Ling, Zhi Peng;Wong, Johnson;Stangl, Rolf;Aberle, Armin G.;Mueller, Thomas;
12:19:1:20 Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
DOI:10.1063/1.3698386 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Thoan, N. H.;Jivanescu, M.;O'Sullivan, B. J.;Pantisano, L.;Gordon, I.;Afanas'ev, V. V.;Stesmans, A.;
12:19:1:21 Light induced changes in the amorphous-crystalline silicon heterointerface
DOI:10.1063/1.4821235 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Mahtani, Pratish;Varache, Renaud;Jovet, Bastien;Longeaud, Christophe;Kleider, Jean-Paul;Kherani, Nazir P.;
12:19:1:22 Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements
DOI:10.1016/j.jnoncrysol.2011.11.023 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Varache, R.;Favre, W.;Korte, L.;Kleider, J. P.;
12:19:1:23 Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation
DOI:10.1016/j.jnoncrysol.2011.12.063 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Schuttauf, J. W. A.;van der Werf, C. H. M.;Kielen, I. M.;van Sark, W. G. J. H. M.;Rath, J. K.;Schropp, R. E. I.;
12:19:1:24 Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
DOI:10.1063/1.4904082 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Simoen, E.;Ferro, V.;O'Sullivan, B. J.;
12:19:1:25 Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions
DOI:10.1016/j.tsf.2012.02.020 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Schulze, T. F.;Korte, L.;Rech, B.;
12:19:1:26 Low defect interface study of intrinsic layer for c-Si surface passivation in a-Si:H/c-Si heterojunction solar cells
DOI:10.1016/j.tsf.2012.03.074 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Kim, Sangho;Dao, Vinh Ai;Shin, Chonghoon;Cho, Jaehyun;Lee, Youngseok;Balaji, Nagarajan;Ahn, Shihyun;Kim, Youngkuk;Yi, Junsin;
12:19:1:27 Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces
DOI:10.1063/1.3601485 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Illiberi, A.;Kudlacek, P.;Smets, A. H. M.;Creatore, M.;van de Sanden, M. C. M.;
12:19:1:28 Studies of the new findings in preparing a scaled amorphous silicon thin-film transistor
DOI:10.1007/s00339-014-8294-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Lin, Cheng-I;Fang, Yean-Kuen;Kuo, Che-Hao;
12:19:1:29 Silicon heterojunction solar cells: Influence of H-2-dilution on cell performance
DOI:10.1016/j.solmat.2012.06.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:8 AU: Gogolin, R.;Ferre, R.;Turcu, M.;Harder, N. -P.;
12:19:1:30 Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cells
DOI:10.1016/j.solmat.2013.05.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:6 AU: Kim, Sangho;Vinh Ai Dao;Lee, Youngseok;Shin, Chonghoon;Park, Jinjoo;Cho, Jaehyun;Yi, Junsin;
12:19:1:31 Charge carrier trapping at passivated silicon surfaces
DOI:10.1063/1.3555622 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Seiffe, Johannes;Hofmann, Marc;Rentsch, Jochen;Preu, Ralf;
12:19:1:32 Influence of different excitation spectra on the measured carrier lifetimes in quasi-steady-state photoconductance measurements
DOI:10.1016/j.solmat.2009.12.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:3 AU: Rosenits, Philipp;Roth, Thomas;Warta, Wilhelm;Glunz, Stefan W.;
12:19:1:33 Single junction a-Si:H solar cell with a-Si:H/nc-Si:H/a-Si:H quantum wells
DOI:10.1016/j.tsf.2013.10.044 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Gupta, Ankur;Vashistha, Manvendra;Sharma, Pratibha;
12:19:2:1 Development status of high-efficiency HIT solar cells
DOI:10.1016/j.solmat.2010.04.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:154 AU: Mishima, Takahiro;Taguchi, Mikio;Sakata, Hitoshi;Maruyama, Eiji;
12:19:2:2 Silicon heterojunction solar cell with passivated hole selective MoOx contact
DOI:10.1063/1.4868880 JN:APPLIED PHYSICS LETTERS PY:2014
TC:8 AU: Battaglia, Corsin;de Nicolas, Silvia Martin;De Wolf, Stefaan;Yin, Xingtian;Zheng, Maxwell;Ballif, Christophe;Javey, Ali;
12:19:2:3 Infrared light management in high-efficiency silicon heterojunction and rear-passivated solar cells
DOI:10.1063/1.4772975 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:29 AU: Holman, Zachary C.;Filipic, Miha;Descoeudres, Antoine;De Wolf, Stefaan;Smole, Franc;Topic, Marko;Ballif, Christophe;
12:19:2:4 Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
DOI:10.1016/j.solmat.2013.03.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:26 AU: Barraud, L.;Holman, Z. C.;Badel, N.;Reiss, P.;Descoeudres, A.;Battaglia, C.;De Wolf, S.;Ballif, C.;
12:19:2:5 Characterization and optimization of indium tin oxide films for heterojunction solar cells
DOI:10.1016/j.solmat.2011.04.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:19 AU: Balestrieri, M.;Pysch, D.;Becker, J. -P.;Hermle, M.;Warta, W.;Glunz, S. W.;
12:19:2:6 Silicon heterojunction rear emitter solar cells: Less restrictions on the optoelectrical properties of front side TCOs
DOI:10.1016/j.solmat.2013.11.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:11 AU: Bivour, Martin;Schroeer, Sebastian;Hermle, Martin;Glunz, Stefan W.;
12:19:2:7 Excellent passivation and low reflectivity with atomic layer deposited bilayer coatings for n-type silicon solar cells
DOI:10.1016/j.tsf.2013.10.166 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Lee, Benjamin G.;Li, Shuo;von Gastrow, Guillaume;Yli-Koski, Marko;Savin, Hele;Malinen, Ville;Skarp, Jarmo;Choi, Sukgeun;Branz, Howard M.;
12:19:2:8 Design and fabrication of a SiOx/ITO double-layer anti-reflective coating for heterojunction silicon solar cells
DOI:10.1016/j.sojmat.2013.05.044 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Zhang, D.;Digdaya, I. A.;Santbergen, R.;van Swaaij, R. A. C. M. M.;Bronsveld, P.;Zeman, M.;van Roosmalen, J. A. M.;Weeber, A. W.;
12:19:2:9 Characterization and optimization of indium tin oxide films for heterojunction solar cells (vol 95, pg 2390, 2011)
DOI:10.1016/j.solmat.2013.05.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:0 AU: Balestrieri, M.;Pysch, D.;Becker, J-P;Hermle, M.;Warta, W.;Glunz, S. W.;
12:19:3:1 Analysis of lateral transport through the inversion layer in amorphous silicon/crystalline silicon heterojunction solar cells
DOI:10.1063/1.4818709 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Filipic, Miha;Holman, Zachary C.;Smole, Franc;De Wolf, Stefaan;Ballif, Christophe;Topic, Marko;
12:19:3:2 Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions
DOI:10.1063/1.3525166 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Maslova, O. A.;Alvarez, J.;Gushina, E. V.;Favre, W.;Gueunier-Farret, M. E.;Gudovskikh, A. S.;Ankudinov, A. V.;Terukov, E. I.;Kleider, J. P.;
12:19:3:3 Band bending and determination of band offsets in amorphous/crystalline silicon heterostructures from planar conductance measurements
DOI:10.1063/1.4769736 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Varache, R.;Kleider, J. P.;Favre, W.;Korte, L.;
12:19:3:4 Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells
DOI:10.1063/1.3663433 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Li, Jian V.;Crandall, Richard S.;Young, David L.;Page, Matthew R.;Iwaniczko, Eugene;Wang, Qi;
12:19:3:5 A comprehensive study of hole collection in heterojunction solar cells
DOI:10.1063/1.4764031 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Crandall, Richard S.;Iwaniczko, Eugene;Li, Jian V.;Page, Mathew R.;
12:19:3:6 Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance
DOI:10.1063/1.4826920 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Maslova, O.;Brezard-Oudot, A.;Gueunier-Farret, M. E.;Alvarez, J.;Favre, W.;Munoz, D.;Kleider, J. P.;
12:19:3:7 Amorphous/crystalline silicon heterojunction solar cells with varying i-layer thickness
DOI:10.1016/j.tsf.2011.01.293 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Page, M. R.;Iwaniczko, E.;Xu, Y. -Q.;Roybal, L.;Hasoon, F.;Wang, Q.;Crandall, R. S.;
12:19:3:8 Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD
DOI:10.1016/j.jnoncrysol.2012.01.048 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Halliop, B.;Salaun, M. F.;Favre, W.;Varache, R.;Gueunier-Farret, M. E.;Kleider, J. P.;Kherani, N. P.;
12:19:3:9 Effect of band mismatch on minority carrier transport in heterojunction solar cells
DOI:10.1016/j.solmat.2013.11.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:0 AU: Crandall, R. S.;Li, J. V.;
12:19:4:1 Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications
DOI:10.1021/am503187 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Wang, Fengyou;Zhang, Xiaodan;Wang, Liguo;Jiang, Yanjian;Wei, Changchun;Sun, Jian;Zhao, Ying;
12:19:4:2 > 750 mV open circuit voltage measured on 50 mu m thick silicon heterojunction solar cell
DOI:10.1063/1.4817723 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Herasimenka, Stanislau Y.;Dauksher, William J.;Bowden, Stuart G.;
12:19:4:3 Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells
DOI:10.1063/1.4804985 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Favre, W.;Coignus, J.;Nguyen, N.;Lachaume, R.;Cabal, R.;Munoz, D.;
12:19:4:4 Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells
DOI:10.1063/1.3267316 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Schulze, T. F.;Korte, L.;Conrad, E.;Schmidt, M.;Rech, B.;
12:19:4:5 Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
DOI:10.1016/j.apsusc.2014.03.187 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Mikolasek, Miroslav;Stuchlikova, L'ubica;Harmatha, Ladislav;Vincze, Andrej;Nemec, Michal;Racko, Juraj;Breza, Juraj;
12:19:4:6 Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer
DOI:10.1016/j.jnoncrysol.2012.03.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:14 AU: Tohoda, Satoshi;Fujishima, Daisuke;Yano, Ayumu;Ogane, Akiyoshi;Matsuyama, Kenta;Nakamura, Yuya;Tokuoka, Nozomu;Kanno, Hiroshi;Kinoshita, Toshihiro;Sakata, Hitoshi;Taguchi, Mikio;Maruyama, Eiji;
12:19:4:7 n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis
DOI:10.1016/j.solmat.2013.03.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: de Nicolas, S. Martin;Coignus, J.;Favre, W.;Kleider, J. P.;Munoz, D.;
12:19:4:8 The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells
DOI:10.1016/j.mseb.2014.07.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Mikolasek, Miroslav;Nemec, Michal;Kovac, Jaroslav;Foti, Marina;Gerardi, Cosimo;Mannino, Giovanni;Valenti, Luca;Lombardo, Salvatore;
12:19:4:9 A comparative study of silicon surface passivation using ethanolic iodine and bromine solutions
DOI:10.1016/j.solmat.2011.04.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:12 AU: Batra, Neha;Vandana;Kumar, Sanjai;Sharma, Mukul;Srivastava, S. K.;Sharma, Pooja;Singh, P. K.;
12:19:4:10 Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness
DOI:10.1016/j.tsf.2014.02.068 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Mikolasek, Miroslav;Nemec, Michal;Vojs, Marian;Jakabovic, Jan;Rehacek, Vlastimil;Zhang, Dong;Zeman, Miro;Harmatha, Ladislav;
12:19:5:1 Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells
DOI:10.1016/j.solmat.2012.06.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:27 AU: Bivour, Martin;Reichel, Christian;Hermle, Martin;Glunz, Stefan W.;
12:19:5:2 Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
DOI:10.1016/j.solmat.2013.09.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:24 AU: Feldmann, Frank;Bivour, Martin;Reichel, Christian;Hermle, Martin;Glunz, Stefan W.;
12:19:5:3 Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturization
DOI:10.1016/j.apsusc.2014.01.183 JN:APPLIED SURFACE SCIENCE PY:2014
TC:10 AU: Kegel, Jan;Angermann, Heike;Stuerzebecher, Uta;Conrad, Erhard;Mews, Mathias;Korte, Lars;Stegernann, Bert;
12:19:5:4 TCO work function related transport losses at the a-Si:H/TCO-contact in SHJ solar cells
DOI:10.1016/j.solmat.2014.06.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Ritzau, Kurt-Ulrich;Bivour, Martin;Schroeer, Sebastian;Steinkemper, Heiko;Reinecke, Patrick;Wagner, Florian;Hermle, Martin;
12:19:5:5 Impact of the transparent conductive oxide work function on injection-dependent a-Si:H/c-Si band bending and solar cell parameters
DOI:10.1063/1.4799042 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Roessler, R.;Leendertz, C.;Korte, L.;Mingirulli, N.;Rech, B.;
12:19:5:6 Carrier-selective contacts for Si solar cells
DOI:10.1063/1.4875904 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Feldmann, F.;Simon, M.;Bivour, M.;Reichel, C.;Hermle, M.;Glunz, S. W.;
12:19:5:7 Efficient carrier-selective p- and n-contacts for Si solar cells
DOI:10.1016/j.solmat.2014.05.039 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Feldmann, Frank;Simon, Maik;Bivour, Martin;Reichel, Christian;Hermle, Martin;Glunz, Stefan W.;
12:19:5:8 Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation
DOI:10.1016/j.mseb.2012.11.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:12 AU: Varache, R.;Kleider, J. P.;Gueunier-Farret, M. E.;Korte, L.;
12:19:5:9 Implications of alkaline solutions-induced etching on optical and minority carrier lifetime features of monocrystalline silicon
DOI:10.1016/j.apsusc.2012.05.110 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Bachtouli, N.;Aouida, S.;Laajimi, R. Hadj;Boujmil, M. F.;Bessais, B.;
12:19:6:1 Low-temperature plasma-deposited silicon epitaxial films: Growth and properties
DOI:10.1063/1.4892095 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Demaurex, Benedicte;Bartlome, Richard;Seif, Johannes P.;Geissbuehler, Jonas;Alexander, Duncan T. L.;Jeangros, Quentin;Ballif, Christophe;De Wolf, Stefaan;
12:19:6:2 Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates
DOI:10.1007/s11664-011-1807-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:16 AU: Shahrjerdi, D.;Hekmatshoar, B.;Bedell, S. W.;Hopstaken, M.;Sadana, D. K.;
12:19:6:3 Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells
DOI:10.1063/1.4751339 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Hekmatshoar, Bahman;Shahrjerdi, Davood;Hopstaken, Marinus;Ott, John A.;Sadana, Devendra K.;
12:19:6:4 Thin crystalline silicon solar cells based on epitaxial films grown at 165 degrees C by RF-PECVD
DOI:10.1016/j.solmat.2011.03.038 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:10 AU: Cariou, Romain;Labrune, Martin;Roca i Cabarrocas, Pere;
12:19:6:5 Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 degrees C by rf-PECVD
DOI:10.1016/j.tsf.2009.09.143 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Labrune, M.;Moreno, M.;Roca i Cabarrocas, P.;
12:19:6:6 Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4-B2H6-H-2 gas mixture without substrate heating
DOI:10.1016/j.tsf.2013.08.118 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Abe, Yusuke;Sakuraba, Masao;Murota, Junichi;
12:19:6:7 Epitaxial growth of Si-1 (-) Ge-x(x) alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating
DOI:10.1016/j.tsf.2013.11.023 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Ueno, Naofumi;Sakuraba, Masao;Murota, Junichi;Sato, Shigeo;
12:19:7:1 Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
DOI:10.1063/1.4861404 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:14 AU: Seif, Johannes Peter;Descoeudres, Antoine;Filipic, Miha;Smole, Franc;Topic, Marko;Holman, Zachary Charles;De Wolf, Stefaan;Ballif, Christophe;
12:19:7:2 Amorphous silicon passivated contacts for diffused junction silicon solar cells
DOI:10.1063/1.4872262 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:6 AU: Bullock, J.;Yan, D.;Wan, Y.;Cuevas, A.;Demaurex, B.;Hessler-Wyser, A.;De Wolf, S.;
12:19:7:3 Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells
DOI:10.1063/1.4749415 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Einsele, Florian;Beyer, Wolfhard;Rau, Uwe;
12:19:7:4 Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers
DOI:10.1063/1.4798603 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Ding, Kaining;Aeberhard, Urs;Finger, Friedhelm;Rau, Uwe;
12:19:8:1 Realization of dual-heterojunction solar cells on ultra-thin similar to 25 mu m, flexible silicon substrates
DOI:10.1063/1.4871503 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Onyegam, Emmanuel U.;Sarkar, Dabraj;Hilali, Mohamed M.;Saha, Sayan;Mathew, Leo;Rao, Rajesh A.;Smith, Ryan S.;Xu, Dewei;Jawarani, Dharmesh;Garcia, Ricardo;Ainom, Moses;Banerjee, Sanjay K.;
12:19:8:2 Single heterojunction solar cells on exfoliated flexible similar to 25 mu m thick mono-crystalline silicon substrates
DOI:10.1063/1.4803174 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Saha, Sayan;Hilali, Mohamed M.;Onyegam, Emmanuel U.;Sarkar, Dabraj;Jawarani, Dharmesh;Rao, Rajesh A.;Mathew, Leo;Smith, Ryan S.;Xu, Dewei;Das, Ujjwal K.;Sopori, Bhushan;Banerjee, Sanjay K.;
12:19:8:3 High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications
DOI:10.1016/j.jcrysgro.2012.12.154 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Oshima, Ryuji;Watanabe, Yoshinori;Yamanaka, Mitsuyuki;Kawanami, Hitoshi;Sakamoto, Isao;Matsubara, Koji;Sakata, Isao;
12:19:8:4 High-efficiency heterojunction solar cells on crystalline germanium substrates
DOI:10.1063/1.4737166 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Hekmatshoar, Bahman;Shahrjerdi, Davood;Hopstaken, Marinus;Fogel, Keith;Sadana, Devendra K.;
12:19:8:5 Influence of surface treatments on crystalline germanium heterojunction solar cell characteristics
DOI:10.1016/j.jnoncrysol.2011.12.045 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:7 AU: Nakano, Shinya;Takeuchi, Yoshiaki;Kaneko, Tetsuya;Kondo, Michio;
12:19:8:6 Exfoliated, thin, flexible germanium heterojunction solar cell with record FF=58.1%
DOI:10.1016/j.solmat.2013.01.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Onyegam, E. U.;Sarkar, D.;Hilali, M.;Saha, S.;Rao, R. A.;Mathew, L.;Jawarani, D.;Mantey, J.;Ainom, M.;Garcia, R.;James, W.;Banerjee, S. K.;
12:19:9:1 Amorphous silicon carbide heterojunction solar cells on p-type substrates
DOI:10.1016/j.tsf.2010.12.028 JN:THIN SOLID FILMS PY:2011
TC:19 AU: Pysch, Damian;Bivour, Martin;Hermle, Martin;Glunz, Stefan W.;
12:19:9:2 Laser fired contacts applied to the rear surface of heterojunction silicon solar cells
DOI:10.1016/j.solmat.2011.06.049 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:4 AU: Martin, I.;Labrune, M.;Salomon, A.;Cabarrocas, P. Roca i;Alcubilla, R.;
12:19:9:3 Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications
DOI:10.1016/j.solmat.2012.09.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Brinkmann, Nils;Sommer, Daniel;Micard, Gabriel;Hahn, Giso;Terheiden, Barbara;
12:19:9:4 Influence of Si-C bond density on the properties of a-Si1-xCx thin films
DOI:10.1016/j.apsusc.2011.11.024 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Shaik, Habibuddin;Raman, K. H. Thulasi;Rao, G. Mohan;
12:19:10:1 Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon
DOI:10.1063/1.4867776 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Couderc, Romain;Amara, Mohamed;Lemiti, Mustapha;
12:19:10:2 Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon (vol 115, 093705, 2014)
DOI:10.1063/1.4871186 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Couderc, Romain;Amara, Mohamed;Lemiti, Mustapha;
12:19:11:1 Generation of uniform large-area very high frequency plasmas by launching two specific standing waves simultaneously
DOI:10.1063/1.4895703 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Chen, Hsin-Liang;Tu, Yen-Cheng;Hsieh, Cheng-Chang;Lin, Deng-Lain;Leou, Keh-Chyang;
12:19:11:2 Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition
DOI:10.1016/j.tsf.2009.07.139 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Hwang, Doo Sup;Lee, Seung Yoon;Lee, Heon Min;Kim, Sang Jin;Kim, Gil Jun;
12:20:1 Design Considerations for Plasmonic Photovoltaics
DOI:10.1002/adma.201000488 JN:ADVANCED MATERIALS PY:2010
TC:276 AU: Ferry, Vivian E.;Munday, Jeremy N.;Atwater, Harry A.;
12:20:2 Plasmonics for photovoltaic applications
DOI:10.1016/j.solmat.2010.02.046 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:168 AU: Pillai, S.;Green, M. A.;
12:20:3 Broadband Enhancement in Thin-Film Amorphous Silicon Solar Cells Enabled by Nucleated Silver Nanoparticles
DOI:10.1021/nl203463z JN:NANO LETTERS PY:2012
TC:109 AU: Chen, Xi;Jia, Baohua;Saha, Jhantu K.;Cai, Boyuan;Stokes, Nicholas;Qiao, Qi;Wang, Yongqian;Shi, Zhengrong;Gu, Min;
12:20:4 Asymmetry in photocurrent enhancement by plasmonic nanoparticle arrays located on the front or on the rear of solar cells
DOI:10.1063/1.3292020 JN:APPLIED PHYSICS LETTERS PY:2010
TC:76 AU: Beck, F. J.;Mokkapati, S.;Polman, A.;Catchpole, K. R.;
12:20:5 Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons
DOI:10.1063/1.3460288 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Zi Ouyang;Pillai, Supriya;Beck, Fiona;Kunz, Oliver;Varlamov, Sergey;Catchpole, Kylie R.;Campbell, Patrick;Green, Martin A.;
12:20:6 Nanoparticle-enhanced thin film solar cells: Metallic or dielectric nanoparticles?
DOI:10.1063/1.3315942 JN:APPLIED PHYSICS LETTERS PY:2010
TC:58 AU: Akimov, Yu A.;Koh, W. S.;Sian, S. Y.;Ren, S.;
12:20:7 Optical Impedance Matching Using Coupled Plasmonic Nanoparticle Arrays
DOI:10.1021/nl200321u JN:NANO LETTERS PY:2011
TC:84 AU: Spinelli, P.;Hebbink, M.;de Waele, R.;Black, L.;Lenzmann, F.;Polman, A.;
12:20:8 The effect of dielectric spacer thickness on surface plasmon enhanced solar cells for front and rear side depositions
DOI:10.1063/1.3567299 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:65 AU: Pillai, S.;Beck, F. J.;Catchpole, K. R.;Ouyang, Z.;Green, M. A.;
12:20:9 Low cost and high performance Al nanoparticles for broadband light trapping in Si wafer solar cells
DOI:10.1063/1.3703121 JN:APPLIED PHYSICS LETTERS PY:2012
TC:30 AU: Zhang, Yinan;Ouyang, Zi;Stokes, Nicholas;Jia, Baohua;Shi, Zhengrong;Gu, Min;
12:20:10 Plasmonics and nanophotonics for photovoltaics
DOI:10.1557/mrs.2011.132 JN:MRS BULLETIN PY:2011
TC:41 AU: Catchpole, Kylie R.;Mokkapati, Sudha;Beck, Fiona;Wang, Er-Chien;McKinley, Arnold;Basch, Angelika;Lee, Jaret;
12:20:11 Plasmonics for improved photovoltaic devices (vol 9, pg 205, 2010)
DOI:10.1038/nmat2866 JN:NATURE MATERIALS PY:2010
TC:57 AU: Atwater, Harry A.;Polman, Albert;
12:20:12 Resonant and nonresonant plasmonic nanoparticle enhancement for thin-film silicon solar cells
DOI:10.1088/0957-4484/21/23/235201 JN:NANOTECHNOLOGY PY:2010
TC:67 AU: Akimov, Yu A.;Koh, W. S.;
12:20:13 Mechanisms of Enhanced Optical Absorption for Ultrathin Silicon Solar Microcells with an Integrated Nanostructured Backside Reflector
DOI:10.1021/am400408g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Corcoran, Christopher J.;Kang, Somi;Li, Lanfang;Guo, Xiaoying;Chanda, Debashis;Nuzzo, Ralph G.;
12:20:14 Controlling the optical scattering of plasmonic nanoparticles using a thin dielectric layer
DOI:10.1063/1.4804964 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Powell, A. W.;Wincott, M. B.;Watt, A. A. R.;Assender, H. E.;Smith, J. M.;
12:20:15 Plasmonic Effects of Au/Ag Bimetallic Multispiked Nanoparticles for Photovoltaic Applications
DOI:10.1021/am5040939 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Sharma, Manisha;Pudasaini, Pushpa Raj;Ruiz-Zepeda, Francisco;Vinogradova, Ekaterina;Ayon, Arturo A.;
12:20:16 Hetero-structured lumpy nanoparticle conformal structure for high absorbance of ultrathin film amorphous silicon solar cells
DOI:10.1063/1.4851238 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Cai, Boyuan;Jia, Baohua;Gu, Min;
12:20:17 Plasmonic metal nanocubes for broadband light absorption enhancement in thin-film a-Si solar cells
DOI:10.1063/1.4869785 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:8 AU: Veenkamp, R. J.;Ye, W. N.;
12:20:18 Surface plasmon enhanced GaAs thin film solar cells
DOI:10.1016/j.solmat.2010.10.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:27 AU: Liu, Wen;Wang, Xiaodong;Li, Yueqiang;Geng, Zhaoxin;Yang, Fuhua;Li, Jinmin;
12:20:19 Plasmonic-enhanced Si Schottky barrier solar cells
DOI:10.1016/j.solmat.2013.10.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Tong, Chong;Yun, Juhyung;Song, Haomin;Gan, Qiaoqiang;Anderson, Wayne A.;
12:20:20 Antireflective Nanoparticle Arrays Enhance the Efficiency of Silicon Solar Cells
DOI:10.1002/adfm.201000678 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:31 AU: Wan, Dehui;Chen, Hsuen-Li;Tseng, Te-Chen;Fang, Cheng-Yi;Lai, Yu-Shen;Yeh, Fang-Yao;
12:20:21 Near-field light concentration of ultra-small metallic nanoparticles for absorption enhancement in a-Si solar cells
DOI:10.1063/1.4794420 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Cai, Boyuan;Jia, Baohua;Shi, Zhengrong;Gu, Min;
12:20:22 Efficient plasmonic scattering of colloidal silver particles through annealing-induced changes
DOI:10.1088/0957-4484/25/45/455706 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Ott, A.;Ring, S.;Yin, G.;Calvet, W.;Stannowski, B.;Lu, Y.;Schlatmann, R.;Ballauff, M.;
12:20:23 Using spacer layers to control metal and semiconductor absorption in ultrathin solar cells with plasmonic substrates
DOI:10.1103/PhysRevB.85.245318 JN:PHYSICAL REVIEW B PY:2012
TC:10 AU: Lal, Niraj N.;Zhou, Hang;Hawkeye, Matthew;Sinha, Jatin K.;Bartlett, Philip N.;Amaratunga, Gehan A. J.;Baumberg, Jeremy J.;
12:20:24 Enhanced light trapping for the silver nanoparticles embedded in the silica layer atop the silicon substrate
DOI:10.1007/s00339-013-7755-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Yang, Hung-Ying;Chen, Shih-Wen;Lin, In-Bai;Li, Jia-Han;
12:20:25 Light trapping by a dielectric nanoparticle back reflector in film silicon solar cells
DOI:10.1063/1.3615796 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Lee, Benjamin G.;Stradins, Paul;Young, David L.;Alberi, Kirstin;Chuang, Ta-Ko;Couillard, J. Gregory;Branz, Howard M.;
12:20:26 Electrical effects of metal nanoparticles embedded in ultra-thin colloidal quantum dot films
DOI:10.1063/1.4738993 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Beck, F. J.;de Arquer, F. P. Garcia;Bernechea, M.;Konstantatos, G.;
12:20:27 Combined plasmonic and dielectric rear reflectors for enhanced photocurrent in solar cells
DOI:10.1063/1.4729290 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Basch, A.;Beck, F. J.;Soederstroem, T.;Varlamov, S.;Catchpole, K. R.;
12:20:28 Multilayer silver nanoparticles for light trapping in thin film solar cells
DOI:10.1063/1.4803676 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Shi, Yanpeng;Wang, Xiaodong;Liu, Wen;Yang, Tianshu;Xu, Rui;Yang, Fuhua;
12:20:29 Influence of rear located silver nanoparticle induced light losses on the light trapping of silicon wafer-based solar cells
DOI:10.1063/1.4896486 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Zhang, Yinan;Jia, Baohua;Ouyang, Zi;Gu, Min;
12:20:30 Theory of plasmonic near-field enhanced absorption in solar cells
DOI:10.1063/1.3623759 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Lagos, N.;Sigalas, M. M.;Lidorikis, E.;
12:20:31 Plasmonic multilayer nanoparticles enhanced photocurrent in thin film hydrogenated amorphous silicon solar cells
DOI:10.1063/1.4739289 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Ho, Chung-I;Yeh, Dan-Ju;Su, Vin-Cent;Yang, Chieh-Hung;Yang, Po-Chuan;Pu, Ming-Yi;Kuan, Chieh-Hsiung;Cheng, I-Chun;Lee, Si-Chen;
12:20:32 The effect of particle vertical positioning on the absorption enhancement in plasmonic organic solar cells
DOI:10.1063/1.4729293 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Wang, Shu-Yi;Borca-Tasciuc, Diana-Andra;Kaminski, Deborah A.;
12:20:33 The effect of mode excitations on the absorption enhancement for silicon thin film solar cells
DOI:10.1063/1.4851817 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Lin, Albert;Zhong, Yan-Kai;Fu, Ssu-Ming;
12:20:34 How front side plasmonic nanostructures enhance solar cell efficiency
DOI:10.1016/j.solmat.2011.05.019 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:24 AU: Diukman, Iddo;Orenstein, Meir;
12:20:35 Enhanced photocurrent in crystalline silicon solar cells by hybrid plasmonic antireflection coatings
DOI:10.1063/1.4773038 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Fahim, Narges F.;Ouyang, Zi;Jia, Baohua;Zhang, Yinan;Shi, Zhengrong;Gu, Min;
12:20:36 Enhanced photocurrent from generated photothermal heat in indium nanoparticles embedded TiO2 film
DOI:10.1063/1.4811360 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Choudhuri, B.;Mondal, A.;Dhar, J. C.;Singh, N. K.;Goswami, T.;Chattopadhyay, K. K.;
12:20:37 Enhanced light trapping for high efficiency crystalline solar cells by the application of rear surface plasmons
DOI:10.1016/j.solmat.2012.02.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:29 AU: Yang, Y.;Pillai, S.;Mehrvarz, H.;Kampwerth, H.;Ho-Baillie, A.;Green, M. A.;
12:20:38 Enhanced broadband light absorption in silicon film by large-size lumpy silver particles
DOI:10.1007/s00339-014-8705-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Yuan, Meng;Zhou, Ning;Li, Dongsheng;Yang, Deren;
12:20:39 Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells
DOI:10.1063/1.4767997 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: van Lare, M.;Lenzmann, F.;Verschuuren, M. A.;Polman, A.;
12:20:40 Nanoplasmonic Enhanced ZnO/Si Heterojunction Metal-Semiconductor-Metal Photodetectors
DOI:10.1007/s11664-013-2526-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:5 AU: Tong, Chong;Yun, Juhyung;Kozarsky, Eric;Anderson, Wayne A.;
12:20:41 Front side plasmonic effect on thin silicon epitaxial solar cells
DOI:10.1016/j.solmat.2012.05.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:9 AU: El Daif, Ounsi;Tong, Lianming;Figeys, Bruno;Van Nieuwenhuysen, Kris;Dmitriev, Alexander;Van Dorpe, Pol;Gordon, Ivan;Dross, Frederic;
12:20:42 Metal nanoparticles in a photovoltaic cell: Effect of metallic loss
DOI:10.1063/1.3665682 JN:AIP ADVANCES PY:2011
TC:2 AU: Watanabe, Ryosuke;Miyano, Kenjiro;
12:20:43 Heteroepitaxial reflector for the fabrication of Si thin film photovoltaic devices
DOI:10.1063/1.4827500 JN:AIP ADVANCES PY:2013
TC:0 AU: Asante, Kofi;Cross, Michael;Varhue, Walter;
12:20:44 Tolerance study of nanoparticle enhancement for thin-film silicon solar cells
DOI:10.1063/1.3623483 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Akimov, Yu. A.;Koh, W. S.;
12:20:45 Nano Ag-enhanced energy conversion efficiency in standard commercial pc-Si solar cells and numerical simulations with finite difference time domain method
DOI:10.1063/1.4830418 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Yu, Jing;Shao, Weijia;Zhou, Yao;Wang, Huijie;Liu, Xiao;Xu, Xiaoliang;
12:20:46 Optimum surface condition for plasmonic Ag nanoparticles in polycrystalline silicon thin film solar cells
DOI:10.1063/1.4862978 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Park, Jongsung;Park, Nochang;Varlamov, Sergey;
12:20:47 Polarizability of supported metal nanoparticles: Mehler-Fock approach
DOI:10.1063/1.4752427 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Jung, Jesper;Pedersen, Thomas G.;
12:20:48 Design principles for plasmonic thin film GaAs solar cells with high absorption enhancement
DOI:10.1063/1.4749800 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Hong, Lei;Rusli;Wang, Xincai;Zheng, Hongyu;He, Lining;Xu, Xiaoyan;Wang, Hao;Yu, HongYu;
12:20:49 Heating dynamics of CO2-laser irradiated silica particles with evaporative shrinking: Measurements and modeling
DOI:10.1063/1.4716016 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Elhadj, S.;Qiu, S. R.;Monterrosa, A. M.;Stolz, C. J.;
12:20:50 Absorption and scattering effects by silver nanoparticles near the interface of organic/inorganic semiconductor tandem films
DOI:10.1007/s11051-013-1801-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Nemes, Coleen T.;Vijapurapu, Divya K.;Petoukhoff, Christopher E.;Cheung, Gary Z.;O'Carroll, Deirdre M.;
12:20:51 Facile metallization of dielectric coatings for plasmonic solar cells
DOI:10.1016/j.solmat.2011.11.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:2 AU: Bastide, S.;Nychyporuk, T.;Zhou, Z.;Fave, A.;Lemiti, M.;
12:20:52 Design of lumpy metallic nanoparticles for broadband and wide-angle light scattering
DOI:10.1063/1.4757135 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Stokes, Nicholas;Jia, Baohua;Gu, Min;
12:20:53 Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
DOI:10.1063/1.4753936 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Lombardo, S.;Tringali, C.;Cannella, G.;Battaglia, A.;Foti, M.;Costa, N.;Principato, F.;Gerardi, C.;
12:20:54 Plasmonic degradation and the importance of over-coating metal nanoparticles for a plasmonic solar cell
DOI:10.1016/j.solmat.2013.12.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:9 AU: Yang, Y.;Pillai, S.;Mehrvarz, H.;Green, M. A.;
12:20:55 Defect-free periodic structures using extreme ultraviolet Talbot lithography in a table-top system
DOI:10.1116/1.4826344 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:3 AU: Li, Wei;Esquiroz, Victor Martinez;Urbanski, Lukasz;Patel, Dinesh;Menoni, Carmen S.;Marconi, Mario C.;Stein, Aaron;Chao, Weilun;Anderson, Erik H.;
12:20:56 One pot green synthesis of gold nanowires using pomegranate juice
DOI:10.1016/j.matlet.2014.07.046 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Byranvand, Mahdi Malekshahi;Kharat, Ali Nemati;
12:20:57 Silver nanoparticles on conducting electrode: a simple two-step process for realizing plasmonic solar cell design
DOI:10.1007/s00339-014-8682-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Hossain, Mohammad Kamal;Drmosh, Qasem Ahmed;Mukhaimer, Ayman Wajeeh;Bahaidarah, Haitham Mohammed;
12:20:58 Dielectric gratings for wide-angle, broadband absorption by thin film photovoltaic cells
DOI:10.1063/1.3512898 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Esteban, R.;Laroche, M.;Greffet, J. J.;
12:20:59 Influence of surface plasmon resonances of silver nanoparticles on optical and electrical properties of textured silicon solar cell
DOI:10.1063/1.4866163 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Sardana, Sanjay K.;Chava, Venkata S. N.;Thouti, Eshwar;Chander, Nikhil;Kumar, Sanjai;Reddy, S. R.;Komarala, Vamsi K.;
12:20:60 A feasibility study for controlling self-organized production of plasmonic enhancement interfaces for solar cells
DOI:10.1016/j.apsusc.2013.12.088 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Borra, Mona Zolfaghari;Gullu, Seda Kayra;Es, Firat;Demircioglu, Olgu;Gunoven, Mete;Turan, Rasit;Bek, Alpan;
12:20:61 Application of gold nano-particles for silicon solar cells efficiency increase
DOI:10.1016/j.apsusc.2013.12.169 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Axelevitch, A.;Gorenstein, B.;Golan, G.;
12:20:62 Modeling and numerical simulations of growth and morphologies of three dimensional aggregated silver films
DOI:10.1063/1.4761993 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Davis, L. J., III;Boggess, M.;Kodpuak, E.;Deutsch, M.;
12:20:63 Buried Nanoantenna Arrays: Versatile Antireflection Coating
DOI:10.1021/nl403257a JN:NANO LETTERS PY:2013
TC:11 AU: Kabiri, Ali;Girgis, Emad;Capasso, Federico;
12:20:64 Performance of plasmonic silicon solar cells using indium nanoparticles deposited on a patterned TiO2 matrix
DOI:10.1016/j.tsf.2014.05.022 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Lee, Yi-Yu;Ho, Wen-Jeng;Chen, Yuan-Tsz;
12:21:1 Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
DOI:10.1063/1.4719100 JN:APPLIED PHYSICS LETTERS PY:2012
TC:40 AU: Zhao, Yuji;Yan, Qimin;Huang, Chia-Yen;Huang, Shih-Chieh;Hsu, Po Shan;Tanaka, Shinichi;Pan, Chih-Chien;Kawaguchi, Yoshinobu;Fujito, Kenji;Van de Walle, Chris G.;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;Feezell, Daniel;
12:21:2 Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
DOI:10.1063/1.3443719 JN:APPLIED PHYSICS LETTERS PY:2010
TC:46 AU: Farrell, R. M.;Hsu, P. S.;Haeger, D. A.;Fujito, K.;DenBaars, S. P.;Speck, J. S.;Nakamura, S.;
12:21:3 Surface morphology evolution of m-plane (1(1)over-bar00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
DOI:10.1063/1.4813079 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Shao, Jiayi;Tang, Liang;Edmunds, Colin;Gardner, Geoff;Malis, Oana;Manfra, Michael;
12:21:4 High optical polarization ratio from semipolar (20(2)over-bar(1)over-bar) blue-green InGaN/GaN light-emitting diodes
DOI:10.1063/1.3619826 JN:APPLIED PHYSICS LETTERS PY:2011
TC:28 AU: Zhao, Yuji;Tanaka, Shinichi;Yan, Qimin;Huang, Chia-Yen;Chung, Roy B.;Pan, Chih-Chien;Fujito, Kenji;Feezell, Daniel;Van de Walle, Chris G.;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:21:5 Misfit dislocation formation at heterointerfaces in (Al, In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
DOI:10.1063/1.3531577 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:25 AU: Wu, F.;Tyagi, A.;Young, E. C.;Romanov, A. E.;Fujito, K.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:21:6 Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
DOI:10.1063/1.3447940 JN:APPLIED PHYSICS LETTERS PY:2010
TC:35 AU: Wu, Feng;Lin, You-Da;Chakraborty, Arpan;Ohta, Hiroaki;DenBaars, Steven P.;Nakamura, Shuji;Speck, James S.;
12:21:7 444.9 nm semipolar (11(2)over-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
DOI:10.1063/1.3675850 JN:APPLIED PHYSICS LETTERS PY:2012
TC:38 AU: Hsu, Po Shan;Hardy, Matthew T.;Wu, Feng;Koslow, Ingrid;Young, Erin C.;Romanov, Alexey E.;Fujito, Kenji;Feezell, Daniel F.;DenBaars, Steven P.;Speck, James S.;Nakamura, Shuji;
12:21:8 Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
DOI:10.1063/1.3671113 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Wu, Feng;Young, E. C.;Koslow, I.;Hardy, M. T.;Hsu, P. S.;Romanov, A. E.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:21:9 Misfit dislocation formation via pre-existing threading dislocation glide in (11(2)over-bar2) semipolar heteroepitaxy
DOI:10.1063/1.3628459 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Hsu, Po Shan;Young, Erin C.;Romanov, Alexey E.;Fujito, Kenji;DenBaars, Steven P.;Nakamura, Shuji;Speck, James S.;
12:21:10 Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure
DOI:10.1063/1.3644978 JN:APPLIED PHYSICS LETTERS PY:2011
TC:28 AU: Yoshida, Shunji;Yokogawa, Toshiya;Imai, Yasuhiko;Kimura, Shigeru;Sakata, Osami;
12:21:11 Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
DOI:10.1016/j.jcrysgro.2013.08.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Kelchner, Kathryn M.;Kuritzky, Leah Y.;Fujito, Kenji;Nakamura, Shuji;DenBaars, Steven P.;Speck, James S.;
12:21:12 Trace analysis of non-basal plane misfit stress relaxation in (20(2)over-bar1) and (30(3)over-bar(1)over-bar) semipolar InGaN/GaN heterostructures
DOI:10.1063/1.4716465 JN:APPLIED PHYSICS LETTERS PY:2012
TC:18 AU: Hardy, Matthew T.;Hsu, Po Shan;Wu, Feng;Koslow, Ingrid L.;Young, Erin C.;Nakamura, Shuji;Romanov, Alexey E.;DenBaars, Steven P.;Speck, James S.;
12:21:13 Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
DOI:10.1063/1.3447926 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Farrell, R. M.;Haeger, D. A.;Chen, X.;Gallinat, C. S.;Davis, R. W.;Cornish, M.;Fujito, K.;Keller, S.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:21:14 Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20(21)over-bar) InGaN/GaN quantum wells
DOI:10.1063/1.3666791 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Huang, Chia-Yen;Hardy, Matthew T.;Fujito, Kenji;Feezell, Daniel F.;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:21:15 Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
DOI:10.1063/1.3541655 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Brinkley, Stuart E.;Lin, You-Da;Chakraborty, Arpan;Pfaff, Nathan;Cohen, Daniel;Speck, James S.;Nakamura, Shuji;DenBaars, Steven P.;
12:21:16 384 nm laser diode grown on a (20(2)over-bar1) semipolar relaxed AlGaN buffer layer
DOI:10.1063/1.4704560 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Haeger, Daniel A.;Young, Erin C.;Chung, Roy B.;Wu, Feng;Pfaff, Nathan A.;Tsai, Min;Fujito, Kenji;DenBaars, Steven P.;Speck, James S.;Nakamura, Shuji;Cohen, Daniel A.;
12:21:17 Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2012.07.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:13 AU: Ploch, Simon;Wernicke, Tim;Thalmair, Johannes;Lohr, Matthias;Pristovsek, Markus;Zweck, Josef;Weyers, Markus;Kneissl, Michael;
12:21:18 Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity
DOI:10.1063/1.3476344 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Durnev, M. V.;Omelchenko, A. V.;Yakovlev, E. V.;Evstratov, I. Yu;Karpov, S. Yu;
12:21:19 Stress relaxation and critical thickness for misfit dislocation formation in (10(1)over-bar0) and (30(31)over-bar) InGaN/GaN heteroepitaxy
DOI:10.1063/1.4707160 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Hsu, Po Shan;Hardy, Matthew T.;Young, Erin C.;Romanov, Alexey E.;DenBaars, Steven P.;Nakamura, Shuji;Speck, James S.;
12:21:20 Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
DOI:10.1063/1.4890864 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Holder, C. O.;Leonard, J. T.;Farrell, R. M.;Cohen, D. A.;Yonkee, B.;Speck, J. S.;DenBaars, S. P.;Nakamura, S.;Feezell, D. F.;
12:21:21 Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
DOI:10.1016/j.jcrysgro.2010.08.060 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:19 AU: Farrell, R. M.;Haeger, D. A.;Chen, X.;Iza, M.;Hirai, A.;Kelchner, K. M.;Fujito, K.;Chakraborty, A.;Keller, S.;DenBaars, S. P.;Speck, J. S.;Nakamura, S.;
12:21:22 Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
DOI:10.1063/1.4753949 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Koslow, Ingrid L.;Hardy, Matthew T.;Hsu, Po Shan;Dang, Po-Yuan;Wu, Feng;Romanov, Alexey;Wu, Yuh-Renn;Young, Erin C.;Nakamura, Shuji;Speck, James S.;DenBaars, Steven P.;
12:21:23 Stacking faults and interface roughening in semipolar (20(2)over-bar(1)over-bar) single InGaN quantum wells for long wavelength emission
DOI:10.1063/1.4871512 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wu, Feng;Zhao, Yuji;Romanov, Alexey;DenBaars, Steven P.;Nakamura, Shuji;Speck, James S.;
12:21:24 Stable vicinal step orientations in m-plane GaN
DOI:10.1016/j.jcrysgro.2014.10.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:2 AU: Kelchner, K. M.;Kuritzky, L. Y.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:21:25 Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
DOI:10.1063/1.3602319 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Matioli, Elison;Brinkley, Stuart;Kelchner, Kathryn M.;Nakamura, Shuji;DenBaars, Steven;Speck, James;Weisbuch, Claude;
12:21:26 Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20(2)over-bar1) InGaN/GaN heterostructures
DOI:10.1063/1.4754693 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Hardy, Matthew T.;Young, Erin C.;Hsu, Po Shan;Haeger, Daniel A.;Koslow, Ingrid L.;Nakamura, Shuji;DenBaars, Steven P.;Speck, James S.;
12:21:27 Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN
DOI:10.1063/1.4767336 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Ploch, Simon;Wernicke, Tim;Frentrup, Martin;Pristovsek, Markus;Weyers, Markus;Kneissl, Michael;
12:21:28 Homogeneous AlGaN/GaN superlattices grown on free-standing (1(1)over-bar00) GaN substrates by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4836975 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Shao, Jiayi;Zakharov, Dmitri N.;Edmunds, Colin;Malis, Oana;Manfra, Michael J.;
12:21:29 Blue and aquamarine stress-relaxed semipolar (11(2)over-bar2) laser diodes
DOI:10.1063/1.4826087 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Hsu, Po Shan;Wu, Feng;Young, Erin C.;Romanov, Alexey E.;Fujito, Kenji;DenBaars, Steven P.;Speck, James S.;Nakamura, Shuji;
12:21:30 Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4812201 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Sawicka, M.;Muziol, G.;Turski, H.;Grzanka, S.;Grzanka, E.;Smalc-Koziorowska, J.;Weyher, J. L.;Cheze, C.;Albrecht, M.;Kucharski, R.;Perlin, P.;Skierbiszewski, C.;
12:21:31 Suppressing void defects in long wavelength semipolar (20(21)over-bar) InGaN quantum wells by growth rate optimization
DOI:10.1063/1.4794864 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Zhao, Yuji;Wu, Feng;Huang, Chia-Yen;Kawaguchi, Yoshinobu;Tanaka, Shinichi;Fujito, Kenji;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:21:32 Strain relaxation of thick (11-22) semipolar InGaN layer for long wavelength nitride-based device
DOI:10.1063/1.4900738 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kim, Jaehwan;Min, Daehong;Jang, Jongjin;Lee, Kyuseung;Chae, Sooryong;Nam, Okhyun;
12:21:33 Step-flow anisotropy of the m-plane GaN (1(1)over-bar00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy
DOI:10.1103/PhysRevB.83.245434 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Sawicka, Marta;Turski, Henryk;Siekacz, Marcin;Smalc-Koziorowska, Julita;Krysko, Marcin;Dziecielewski, Igor;Grzegory, Izabella;Skierbiszewski, Czeslaw;
12:21:34 Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
DOI:10.1063/1.4757423 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Young, Erin C.;Wu, Feng;Romanov, Alexey E.;Haeger, Daniel A.;Nakamura, Shuji;Denbaars, Steven P.;Cohen, Daniel A.;Speck, James S.;
12:21:35 High-power low-droop violet semipolar (30(3)over-bar(1)over-bar) InGaN/GaN light-emitting diodes with thick active layer design
DOI:10.1063/1.4900793 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Becerra, Daniel L.;Zhao, Yuji;Oh, Sang Ho;Pynn, Christopher D.;Fujito, Kenji;DenBaars, Steven P.;Nakamura, Shuji;
12:21:36 Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
DOI:10.1063/1.4790636 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Farrell, R. M.;Haeger, D. A.;Fujito, K.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:21:37 Czochralski growth and characterization of MgAl2O4 single crystals
DOI:10.1016/j.jcrysgro.2014.11.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Bajor, Andrzej L.;Chmielewski, Marcin;Diduszko, Ryszard;Kisielewski, Jaroslaw;Lukasiewicz, Tadeusz;Orlinski, Krzysztof;Romaniec, Magdalena;Szyrski, Wlodzimierz;
12:21:38 Onset of plastic relaxation in semipolar (11(2)over-bar2) InxGa1-xN/GaN heterostructures
DOI:10.1016/j.jcrysgro.2013.10.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Koslow, Ingrid L.;Hardy, Matthew T.;Hsu, Po Shan;Wu, Feng;Romanov, Alexey E.;Young, Erin C.;Nakamura, Shuji;DenBaars, Steven P.;Speck, James S.;
12:21:39 Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes
DOI:10.1116/1.4792519 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Rishinaramangalam, Ashwin K.;Fairchild, Michael N.;Hersee, Stephen D.;Balakrishnan, Ganesh;Feezell, Daniel F.;
12:21:40 A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation
DOI:10.1007/s00339-013-7596-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Morawiec, Seweryn;Sarzaa, Robert P.;Nakwaski, Wodzimierz;
12:21:41 Nanoindentation study on insight of plasticity related to dislocation density and crystal orientation in GaN
DOI:10.1063/1.4767372 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Fujikane, Masaki;Yokogawa, Toshiya;Nagao, Shijo;Nowak, Roman;
12:21:42 Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
DOI:10.1063/1.4824850 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Li, Zengcheng;Liu, Jianping;Feng, Meixin;Zhou, Kun;Zhang, Shuming;Wang, Hui;Li, Deyao;Zhang, Liqun;Zhao, Degang;Jiang, Desheng;Wang, Huaibing;Yang, Hui;
12:21:43 Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions
DOI:10.1016/j.jcrysgro.2013.04.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Sawicka, M.;Cheze, C.;Turski, H.;Smalc-Koziorowska, J.;Krysko, M.;Kret, S.;Remmele, T.;Albrecht, M.;Cywinski, G.;Grzegory, I.;Skierbiszewski, C.;
12:21:44 Semipolar (20(2)over-bar1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.4865913 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Sawicka, Marta;Muziol, Grzegorz;Turski, Henryk;Feduniewicz-Zmuda, Anna;Krysko, Marcin;Grzanka, Szymon;Grzanka, Ewa;Smalc-Koziorowska, Julita;Albrecht, Martin;Kucharski, Robert;Perlin, Piotr;Skierbiszewski, Czeslaw;
12:21:45 Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1-xN/GaN heterostructures
DOI:10.1063/1.3276561 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Young, Erin C.;Romanov, Alexey E.;Gallinat, Chad S.;Hirai, Asako;Beltz, Glenn E.;Speck, James S.;
12:21:46 On the optical polarization properties of semipolar InGaN quantum wells
DOI:10.1063/1.3618676 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Schade, L.;Schwarz, U. T.;Wernicke, T.;Rass, J.;Ploch, S.;Weyers, M.;Kneissl, M.;
12:21:47 True-green (11-22) plane optically pumped laser with cleaved m-plane facets
DOI:10.1063/1.3614436 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Sizov, Dmitry;Bhat, Rajaram;Heberle, Albert;Visovsky, Nick;Zah, Chung-en;
12:21:48 Suppression of relaxation in (20(2)over-bar1) InGaN/GaN laser diodes using limited area epitaxy
DOI:10.1063/1.4770367 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Hardy, Matthew T.;Nakamura, Shuji;Speck, James S.;DenBaars, Steven P.;
12:21:49 Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN
DOI:10.1063/1.4841575 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Armstrong, A. M.;Kelchner, K.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:21:50 On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
DOI:10.1063/1.4768686 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Vennegues, P.;Chauveau, J. M.;Bougrioua, Z.;Zhu, T.;Martin, D.;Grandjean, N.;
12:21:51 Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures
DOI:10.1063/1.4806997 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Sizov, Dmitry;Bhat, Rajaram;Zah, Chung-en;
12:21:52 Ab initio density functional theory study of non-polar (10(1)over-bar0), (11(2)over-bar0) and semipolar {20(2)over-bar1} GaN surfaces
DOI:10.1063/1.4879675 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Mutombo, P.;Romanyuk, O.;
12:21:53 Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20(2)over-bar1) AlGaN/GaN buffer layers
DOI:10.1016/j.jcrysgro.2015.02.081 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Young, Erin C.;Yonkee, Benjamin P.;Wu, Feng;Saifaddin, Burhan K.;Cohen, Daniel A.;DenBaars, Steve P.;Nakamura, Shuji;Speck, James S.;
12:21:54 Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal
DOI:10.1063/1.3665250 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Fujikane, Masaki;Yokogawa, Toshiya;Nagao, Shijo;Nowak, Roman;
12:21:55 Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates
DOI:10.1063/1.3622642 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Smalc-Koziorowska, Julita;Sawicka, Marta;Remmele, Thilo;Skierbiszewski, Czeslaw;Grzegory, Izabella;Albrecht, Martin;
12:21:56 A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells
DOI:10.1063/1.3561761 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Yamaguchi, Atsushi A.;Kojima, Kazunobu;
12:21:57 Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition
DOI:10.1063/1.3687700 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Henry, T. A.;Armstrong, A.;Kelchner, K. M.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:21:58 Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation
DOI:10.1063/1.4764928 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Tokumoto, Yuki;Kutsukake, Kentaro;Ohno, Yutaka;Yonenaga, Ichiro;
12:21:59 Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
DOI:10.1016/j.jcrysgro.2011.06.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Rudzinski, M.;Kudrawiec, R.;Janicki, L.;Serafinczuk, J.;Kucharski, R.;Zajac, M.;Misiewicz, J.;Doradzinski, R.;Dwilinski, R.;Strupinski, W.;
12:21:60 Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
DOI:10.1063/1.359014 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:57 AU: Romanov, Alexey E.;Young, Erin C.;Wu, Feng;Tyagi, Anurag;Gallinat, Chad S.;Nakamura, Shuji;DenBaars, Steve P.;Speck, James S.;
12:21:61 Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts
DOI:10.1016/j.jcrysgro.2015.04.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Sarzynski, Marcin;Suski, Tadeusz;Czernecki, Robert;Grzanka, Ewa;Marona, Lucja;Khachapuridze, Aleksander;Drozdz, Piotr;Pieniak, Katarzyna;Domagala, Jaroslaw Z.;Leszczynski, Michal;Perlin, Piotr;
12:21:62 Polarization dependent study of gain anisotropy in semipolar InGaN lasers
DOI:10.1063/1.3655183 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Rass, Jens;Wernicke, Tim;Ploch, Simon;Brendel, Moritz;Kruse, Andreas;Hangleiter, Andreas;Scheibenzuber, Wolfgang;Schwarz, Ulrich T.;Weyers, Markus;Kneissl, Michael;
12:21:63 Valence band effective mass of non-c-plane nitride heterostructures
DOI:10.1063/1.3448578 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Kojima, K.;Funato, M.;Kawakami, Y.;Noda, S.;
12:21:64 The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (11(2)over-bar2) GaN or AlN substrates
DOI:10.1063/1.4767683 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Jones, K. A.;Batyrev, I. G.;
12:21:65 Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
DOI:10.1016/j.jcrysgro.2013.07.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Oehler, F.;Zhu, T.;Rhode, S.;Kappers, M. J.;Humphreys, C. J.;Oliver, R. A.;
12:21:66 Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire
DOI:10.1016/j.jcrysgro.2014.12.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Han, Yisong;Caliebe, Marian;Kappers, Menno;Scholz, Ferdinand;Pristovsek, Markus;Humphreys, Colin;
12:21:67 True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
DOI:10.1063/1.4829699 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Hardy, Matthew T.;Wu, Feng;Hsu, Po Shan;Haeger, Daniel A.;Nakamura, Shuji;Speck, James S.;DenBaars, Steven P.;
12:21:68 Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
DOI:10.1016/j.jcrysgro.2010.01.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Lai, K. Y.;Paskova, T.;Wheeler, V. D.;Grenko, J. A.;Johnson, M. A. L.;Udwary, K.;Preble, E. A.;Evans, K. R.;
12:21:69 High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes (vol 99, 051109, 2011)
DOI:10.1063/1.3665683 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Zhao, Yuji;Tanaka, Shinichi;Yan, Qimin;Huang, Chia-Yen;Chung, Roy B.;Pan, Chih-Chien;Fujito, Kenji;Feezell, Daniel;Van de Walle, Chris G.;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:21:70 Patterned polarized fluorescence from a thin film
DOI:10.1063/1.3631670 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Myhre, G.;Sayyad, A.;Mataka, S.;Pau, S.;
12:21:71 Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy (vol 102, 251101, 2013)
DOI:10.1063/1.4879639 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Sawicka, M.;Muziol, G.;Turski, H.;Grzanka, S.;Grzanka, E.;Smalc-Koziorowska, J.;Weyher, J. L.;Cheze, C.;Albrecht, M.;Kucharski, R.;Perlin, P.;Skierbiszewski, C.;
12:21:72 Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy
DOI:10.1063/1.3607602 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Zhao, Wei;Wang, Lai;Wang, Jiaxing;Hao, Zhibiao;Luo, Yi;
12:21:73 Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation (vol 112, 093526, 2012)
DOI:10.1063/1.4771927 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Tokumoto, Yuki;Kutsukake, Kentaro;Ohno, Yutaka;Yonenaga, Ichiro;
12:21:74 Steering and collimating ballistic electrons with amphoteric refraction
DOI:10.1063/1.4739712 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Radu, A.;Dragoman, D.;Iftimie, S.;
12:21:75 Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD
DOI:10.1016/j.jcrysgro.2010.07.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Suresh, S.;Lourdudoss, S.;Landgren, G.;Baskar, K.;
12:21:76 Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.01.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Zhou, Kun;Liu, Jianping;Zhang, Shuming;Li, Zengcheng;Feng, Meixin;Li, Deyao;Zhang, Liqun;Wang, Feng;Zhu, Jianjun;Yang, Hui;
12:21:77 High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy
DOI:10.1116/1.3589228 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Sawicka, Marta;Feduniewicz-Zmuda, Anna;Turski, Henryk;Siekacz, Marcin;Grzanka, Szymon;Krysko, Marcin;Dziecielewski, Igor;Grzegory, Izabella;Skierbiszewski, Czeslaw;
12:21:78 Semipolar (20(2)over-bar1) GaN laser diodes operating at 388nm grown by plasma-assisted molecular beam epitaxy (vol 32, 02C115, 2014)
DOI:10.1116/1.4892216 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Sawicka, Marta;Muziol, Grzegorz;Turski, Henryk;Feduniewicz-Zmuda, Anna;Krysko, Marcin;Grzanka, Szymon;Grzanka, Ewa;Smalc-Koziorowska, Julita;Albrecht, Martin;Kucharski, Robert;Perlin, Piotr;Skierbiszewski, Czeslaw;
12:22:1 Excellent antireflection properties of vertical silicon nanowire arrays
DOI:10.1016/j.solmat.2010.02.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:104 AU: Srivastava, Sanjay K.;Kumar, Dinesh;Singh, P. K.;Kar, M.;Kumar, Vikram;Husain, M.;
12:22:2 Fabrication of silicon nanowire arrays based solar cell with improved performance
DOI:10.1016/j.solmat.2010.04.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:87 AU: Kumar, Dinesh;Srivastava, Sanjay K.;Singh, P. K.;Husain, M.;Kumar, Vikram;
12:22:3 Optical properties of silicon light trapping structures for photovoltaics
DOI:10.1016/j.solmat.2010.07.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:61 AU: Iyengar, Vikram V.;Nayak, Barada K.;Gupta, Mool C.;
12:22:4 Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters
DOI:10.1088/0957-4484/21/9/095502 JN:NANOTECHNOLOGY PY:2010
TC:43 AU: Bae, Joonho;Kim, Hyunjin;Zhang, Xiao-Mei;Dang, Cuong H.;Zhang, Yue;Choi, Young Jin;Nurmikko, Arto;Wang, Zhong Lin;
12:22:5 Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications
DOI:10.1002/smll.201101792 JN:SMALL PY:2012
TC:42 AU: Liu, Yaoping;Lai, Tao;Li, Hailing;Wang, Yan;Mei, Zengxia;Liang, Huili;Li, Zhilei;Zhang, Fengming;Wang, Wenjing;Kuznetsov, Andrej Yu;Du, Xiaolong;
12:22:6 Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires
DOI:10.1088/0957-4484/22/15/155606 JN:NANOTECHNOLOGY PY:2011
TC:39 AU: Ozdemir, Baris;Kulakci, Mustafa;Turan, Rasit;Unalan, Husnu Emrah;
12:22:7 Multi-scale surface texture to improve blue response of nanoporous black silicon solar cells
DOI:10.1063/1.3636105 JN:APPLIED PHYSICS LETTERS PY:2011
TC:44 AU: Toor, Fatima;Branz, Howard M.;Page, Matthew R.;Jones, Kim M.;Yuan, Hao-Chih;
12:22:8 Surface Passivation of Efficient Nanotextured Black Silicon Solar Cells Using Thermal Atomic Layer Deposition
DOI:10.1021/am402889k JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:31 AU: Wang, Wei-Cheng;Lin, Che-Wei;Chen, Hsin-Jui;Chang, Che-Wei;Huang, Jhih-Jie;Yang, Ming-Jui;Tjahjono, Budi;Huang, Jian-Jia;Hsu, Wen-Ching;Chen, Miin-Jang;
12:22:9 Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics
DOI:10.1007/s11051-009-9795-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:36 AU: Kumar, Dinesh;Srivastava, Sanjay K.;Singh, P. K.;Sood, K. N.;Singh, V. N.;Dilawar, Nita;Husain, M.;
12:22:10 Fabrication and characteristics of black silicon for solar cell applications: An overview
DOI:10.1016/j.mssp.2014.02.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:9 AU: Hsu, Chih-Hung;Wu, Jia-Ren;Lu, Yen-Tien;Flood, Dennis J.;Barron, Andrew R.;Chen, Lung-Chien;
12:22:11 Improved broadband antireflection in Schottky-like junction of conformal Al-doped ZnO layer on chemically textured Si surfaces
DOI:10.1063/1.4896340 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Saini, C. P.;Barman, A.;Kumar, M.;Sahoo, P. K.;Som, T.;Kanjilal, A.;
12:22:12 Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells
DOI:10.1063/1.4884899 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hong, M.;Yuan, G. D.;Peng, Y.;Chen, H. Y.;Zhang, Y.;Liu, Z. Q.;Wang, J. X.;Cai, B.;Zhu, Y. M.;Chen, Y.;Liu, J. H.;Li, J. M.;
12:22:13 Wafer-scale fabrication of silicon nanowire arrays with controllable dimensions
DOI:10.1016/j.apsusc.2012.05.067 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Wang, Wei;Li, Dan;Tian, Miao;Lee, Yung-Cheng;Yang, Ronggui;
12:22:14 Conformal Transparent Conducting Oxides on Black Silicon
DOI:10.1002/adma.201002515 JN:ADVANCED MATERIALS PY:2010
TC:29 AU: Otto, Martin;Kroll, Matthias;Kaesebier, Thomas;Lee, Seung-Mo;Putkonen, Matti;Salzer, Roland;Miclea, Paul T.;Wehrspohn, Ralf B.;
12:22:15 Silicon nanowire network metal-semiconductor-metal photodetectors
DOI:10.1063/1.4819387 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Mulazimoglu, Emre;Coskun, Sahin;Gunoven, Mete;Butun, Bayram;Ozbay, Ekmel;Turan, Rasit;Unalan, Husnu Emrah;
12:22:16 Hierarchical robust textured structures for large scale self-cleaning black silicon solar cells
DOI:10.1016/j.nanoen.2013.11.002 JN:NANO ENERGY PY:2014
TC:11 AU: Liu, Yan;Das, Arnab;Lin, Ziyin;Cooper, Ian B.;Rohatgi, Ajeet;Wong, C. P.;
12:22:17 Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method
DOI:10.1063/1.4740051 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Najar, A.;Slimane, A. B.;Hedhili, M. N.;Anjum, D.;Sougrat, R.;Ng, T. K.;Ooi, B. S.;
12:22:18 Realization of high performance silicon nanowire based solar cells with large size
DOI:10.1088/0957-4484/24/23/235402 JN:NANOTECHNOLOGY PY:2013
TC:19 AU: Lin, X. X.;Hua, X.;Huang, Z. G.;Shen, W. Z.;
12:22:19 Fabrication and optical characterization of Si nanowires formed by catalytic chemical etching in Ag2O/HF solution
DOI:10.1016/j.apsusc.2012.02.063 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Kato, Yuki;Adachi, Sadao;
12:22:20 Crystalline silicon solar cells with micro/nano texture
DOI:10.1016/j.apsusc.2012.10.081 JN:APPLIED SURFACE SCIENCE PY:2013
TC:19 AU: Dimitrov, Dimitre Z.;Du, Chen-Hsun;
12:22:21 On the optical and morphological properties of microstructured Black Silicon obtained by cryogenic-enhanced plasma reactive ion etching
DOI:10.1063/1.4805024 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:13 AU: Nguyen, K. N.;Basset, P.;Marty, F.;Leprince-Wang, Y.;Bourouina, T.;
12:22:22 Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics
DOI:10.1088/0957-4484/25/17/175601 JN:NANOTECHNOLOGY PY:2014
TC:9 AU: Srivastava, Sanjay K.;Kumar, Dinesh;Schmitt, S. W.;Sood, K. N.;Christiansen, S. H.;Singh, P. K.;
12:22:23 Silver catalyzed nano-texturing of silicon surfaces for solar cell applications
DOI:10.1016/j.solmat.2011.05.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:40 AU: Srivastava, Sanjay K.;Kumar, Dinesh;Vandana;Sharma, Mukul;Kumar, Ravi;Singh, P. K.;
12:22:24 Post-black etching on emitter to improve performance of multi-scale texture silicon solar cells
DOI:10.1007/s00339-014-8247-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Jiang, Yurong;Yang, Haigang;Cao, Weiwei;Wang, Guangna;Ma, Heng;Chang, Fanggao;
12:22:25 Silicon nanowire-array-textured solar cells for photovoltaic application
DOI:10.1063/1.3493733 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Chen, Chen;Jia, Rui;Yue, Huihui;Li, Haofeng;Liu, Xinyu;Wu, Deqi;Ding, Wuchang;Ye, Tianchun;Kasai, Seiya;Tamotsu, Hashizume;Chu, Junhao;Wang, Shanli;
12:22:26 Preparing wafer-scale omnidirectional broadband light-harvesting nanostructures in a few seconds
DOI:10.1039/c3ta15070d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Chen, Yi-Chiun;Su, Pao-Yun;Tseng, Shao-Chin;Lee, Yang-Chun;Chen, Hsuen-Li;
12:22:27 Black Silicon formation using dry etching for solar cells applications
DOI:10.1016/j.mseb.2012.03.038 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:14 AU: Murias, D.;Reyes-Betanzo, C.;Moreno, M.;Torres, A.;Itzmoyotl, A.;Ambrosio, R.;Soriano, M.;Lucas, J.;Roca i Cabarrocas, P.;
12:22:28 Effect of alkali treatment on the spectral response of silicon-nanowire solar cells
DOI:10.1016/j.mssp.2013.08.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Jiang, Yurong;Qin, Ruiping;Li, Meng;Wang, Guangna;Ma, Heng;Chang, Fanggao;
12:22:29 Black silicon on emitter diminishes the lateral electric field and enhances the blue response of a solar cell by optimizing depletion region uniformity
DOI:10.1016/j.scriptamat.2012.10.023 JN:SCRIPTA MATERIALIA PY:2013
TC:9 AU: Shen, Zenan;Liu, Bangwu;Xia, Yang;Liu, Jie;Liu, Jinhu;Zhong, Sihua;Li, Chaobo;
12:22:30 Porous-pyramids structured silicon surface with low reflectance over a broad band by electrochemical etching
DOI:10.1016/j.apsusc.2012.02.033 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Lv, Hongjie;Shen, Honglie;Jiang, Ye;Gao, Chao;Zhao, Han;Yuan, Jiren;
12:22:31 The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching
DOI:10.1063/1.4900996 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Steglich, Martin;Kaesebier, Thomas;Zilk, Matthias;Pertsch, Thomas;Kley, Ernst-Bernhard;Tuennermann, Andreas;
12:22:32 Black silicon with high density and high aspect ratio nanowhiskers
DOI:10.1088/0957-4484/22/23/235307 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Kalem, S.;Werner, P.;Arthursson, O.;Talalaev, V.;Nilsson, B.;Hagberg, M.;Frederiksen, H.;Sodervall, U.;
12:22:33 Alkali-treated Si nanowire array for improving solar cell performance
DOI:10.1007/s00339-013-7846-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Jiang, Yurong;Qing, Ruiping;Yang, Haigang;Chen, Chen;Ma, Heng;Chang, Fanggao;
12:22:34 Black silicon with controllable macropore array for enhanced photoelectrochemical performance
DOI:10.1063/1.4752231 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Ao, Xianyu;Tong, Xili;Kim, Dong Sik;Zhang, Lianbing;Knez, Mato;Mueller, Frank;He, Sailing;Schmidt, Volker;
12:22:35 Fabrication of silicon wafer with ultra low reflectance by chemical etching method
DOI:10.1016/j.apsusc.2011.02.102 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Cao, Yingli;Liu, Aimin;Li, Honghao;Liu, Yiting;Qiao, Fen;Hu, Zengquan;Sang, Yongcang;
12:22:36 Performance of Silicon Nanowire Solar Cells with Phosphorus-Diffused Emitters
DOI:10.1155/2012/156986 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Zeng, Lingsheng;Yu, Xuegong;Han, Yangang;Yang, Deren;
12:22:37 Damage-free reactive ion etch for high-efficiency large-area multi-crystalline silicon solar cells
DOI:10.1016/j.solmat.2010.03.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:22 AU: Lee, Kyoung-Soo;Ha, Man-Hyo;Kim, Jong Hwan;Jeong, Ji-Weon;
12:22:38 Improved antireflection properties and optimized structure for passivation of well-separated, vertical silicon nanowire arrays for solar cell applications
DOI:10.1016/j.solmat.2014.03.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:5 AU: Zuo, Zewen;Zhu, Kai;Cui, Guanglei;Huang, Wanxia;Qu, Jun;Shi, Yi;Liu, Yousong;Ji, Guangbin;
12:22:39 Facile preparation of catalytically active, microstructured gold patterns on quartz and silicon substrates
DOI:10.1016/j.apsusc.2014.04.014 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Kaempken, Britta;Heinrich, Martina;Vavaleskou, Thaleia;Auner, Norbert;Terfort, Andreas;
12:22:40 Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures
DOI:10.1016/j.solmat.2011.05.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:17 AU: Tseng, Ping-Chen;Yu, Peichen;Chen, Hsin-Chu;Tsai, Yu-Lin;Han, Hao-Wei;Tsai, Min-An;Chang, Chia-Hua;Kuo, Hao-Chung;
12:22:41 Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process
DOI:10.1016/j.tsf.2013.10.080 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Cheng, S. L.;Lin, Y. H.;Lee, S. W.;Chen, H.;
12:22:42 Large-scale black multi-crystalline silicon solar cell with conversion efficiency over 18 %
DOI:10.1007/s00339-014-8414-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:6 AU: Yue, Zhihao;Shen, Honglie;Jiang, Ye;Chen, Weilong;Tang, Quntao;Jin, Jiale;Pu, Tian;Luo, Jingwang;Kong, Fanjian;Rui, Chunbao;Cai, Jibo;
12:22:43 Ultra high-density silicon nanowires for extremely low reflection in visible regime
DOI:10.1063/1.3650266 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Pei, Ting-Hang;Thiyagu, Subramani;Pei, Zingway;
12:22:44 Fabrication of size-tunable, periodic Si nanohole arrays by plasma modified nanosphere lithography and anisotropic wet etching
DOI:10.1016/j.apsusc.2012.09.073 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Cheng, S. L.;Lin, Y. H.;Lee, S. W.;Lee, T.;Chen, H.;Hu, J. C.;Chen, L. T.;
12:22:45 Study of optical absorbance in porous silicon nanowires for photovoltaic applications
DOI:10.1016/j.apsusc.2013.07.026 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Charrier, Joel;Najar, Adel;Pirasteh, Parastesh;
12:22:46 Antireflective structures on silicon surface using catalytic nickel nanoparticles
DOI:10.1063/1.4827838 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Pranaitis, M.;Jaramine, L.;Cyras, V.;Selskis, A.;Galdikas, A.;
12:22:47 Anti-reflection layers fabricated by a one-step copper-assisted chemical etching with inverted pyramidal structures intermediate between texturing and nanopore-type black silicon
DOI:10.1039/c4ta02006e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:4 AU: Lu, Yen-Tien;Barron, Andrew R.;
12:22:48 Formation of mesa-type vertically aligned silicon nanowire bundle arrays by selective-area chemical oxidation and etching processes
DOI:10.1116/1.4711000 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Hung, Yung-Jr;Lee, San-Liang;Beng, Looi Choon;
12:22:49 Influence of the texturing structure on the properties of black silicon solar cell
DOI:10.1016/j.solmat.2012.10.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:16 AU: Zhong, Sihua;Liu, Bangwu;Xia, Yang;Liu, Jinhu;Liu, Jie;Shen, Zenan;Xu, Zheng;Li, Chaobo;
12:22:50 Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application
DOI:10.1016/j.tsf.2014.01.040 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Hung, Yung-Jr;Lee, San-Liang;Beng, Looi Choon;Chang, Hsuan-Chen;Huang, Yung-Jui;Lee, Kuei-Yi;Huang, Ying-Sheng;
12:22:51 Reflectivity of porous-pyramids structured silicon surface
DOI:10.1016/j.apsusc.2010.07.014 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Xiao, Junfeng;Wang, Lei;Li, Xiaoqiang;Pi, Xiaodong;Yang, Deren;
12:22:52 Roles of Ag in fabricating Si nanowires by the electroless chemical etching technique
DOI:10.1007/s11051-012-0784-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:1 AU: Wan, X.;Wang, Q. K.;Wangyang, P. H.;Tao, H.;
12:22:53 Patterning of various silicon structures via polymer lithography and catalytic chemical etching
DOI:10.1088/0957-4484/22/27/275305 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Lee, Jung-Pil;Bang, Byoung Man;Choi, Sinho;Kim, Taesung;Park, Soojin;
12:22:54 Influence of the silicon surface treatment on the properties of SiNWs/PVK hybrid solar cells
DOI:10.1016/j.synthmet.2012.05.006 JN:SYNTHETIC METALS PY:2012
TC:1 AU: Ben Dkhil, S.;Ebdelli, R.;Bourguiga, R.;Davenas, J.;Cornu, D.;
12:22:55 Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films
DOI:10.1063/1.4828732 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Dou, Bingfei;Jia, Rui;Sun, Yun;Li, Haofeng;Chen, Chen;Jin, Zhi;Liu, Xinyu;
12:22:56 The study of defect removal etching of black silicon for solar cells
DOI:10.1016/j.mssp.2014.01.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Xiao, Gao;Liu, Bangwu;Liu, Jinhu;Xu, Zheng;
12:22:57 Fabrication of vertically stacked single-crystalline Si nanowires using self-limiting oxidation
DOI:10.1088/0957-4484/23/1/015307 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Wang, Tao;Yu, Bin;Liu, Yan;Guo, Qing;Sheng, Kuang;Deen, M. Jamal;
12:22:58 Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching
DOI:10.1016/j.apsusc.2010.07.039 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Fellahi, Ouarda;Hadjersi, Toufik;Maamache, Mustapha;Bouanik, Sihem;Manseri, Amar;
12:22:59 Effect of texturing process involving saw-damage etching on crystalline silicon solar cells
DOI:10.1016/j.apsusc.2013.07.051 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Kim, Hyunho;Park, Sungeun;Kang, Byungjun;Kim, Seongtak;Tark, Sung Ju;Kim, Donghwan;Dahiwale, S. S.;
12:22:60 Preparation of low reflective microstructure at multicrystal silicon surface by ferric nitrate etching
DOI:10.1016/j.apsusc.2013.05.007 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Zhang, Lidian;Shen, Honglie;Yue, Zhihao;Wang, Wei;Jiang, Ye;
12:23:1 Exploring arrays of vertical one-dimensional nanostructures for cellular investigations
DOI:10.1088/0957-4484/25/36/362001 JN:NANOTECHNOLOGY PY:2014
TC:10 AU: Bonde, Sara;Buch-Manson, Nina;Rostgaard, Katrine R.;Andersen, Tor Kristian;Berthing, Trine;Martinez, Karen L.;
12:23:2 Noninvasive Neuron Pinning with Nanopillar Arrays
DOI:10.1021/nl101950x JN:NANO LETTERS PY:2010
TC:57 AU: Xie, Chong;Hanson, Lindsey;Xie, Wenjun;Lin, Ziliang;Cui, Bianxiao;Cui, Yi;
12:23:3 Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
DOI:10.1021/nl4022754 JN:NANO LETTERS PY:2013
TC:10 AU: Adolfsson, Karl;Persson, Henrik;Wallentin, Jesper;Oredsson, Stina;Samuelson, Lars;Tegenfeldt, Jonas O.;Borgstrom, Magnus T.;Prinz, Christelle N.;
12:23:4 Tuning InAs Nanowire Density for HEK293 Cell Viability, Adhesion, and Morphology: Perspectives for Nanowire-Based Biosensors
DOI:10.1021/am402070k JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Bonde, Sara;Berthing, Trine;Madsen, Morten Hannibal;Andersen, Tor Kristian;Buch-Manson, Nina;Guo, Lei;Li, Xiaomei;Badique, Florent;Anselme, Karine;Nygard, Jesper;Martinez, Karen L.;
12:23:5 Fifteen-Piconewton Force Detection from Neural Growth Cones Using Nanowire Arrays
DOI:10.1021/nl902675h JN:NANO LETTERS PY:2010
TC:49 AU: Hallstrom, Waldemar;Lexholm, Monica;Suyatin, Dmitry B.;Hammarin, Greger;Hessman, Dan;Samuelson, Lars;Montelius, Lars;Kanje, Martin;Prinz, Christelle N.;
12:23:6 Nanostraws for Direct Fluidic Intracellular Access
DOI:10.1021/nl204051v JN:NANO LETTERS PY:2012
TC:42 AU: VanDersarl, Jules J.;Xu, Alexander M.;Melosh, Nicholas A.;
12:23:7 Fine-Tuning the Degree of Stem Cell Polarization and Alignment on Ordered Arrays of High-Aspect-Ratio Nanopillars
DOI:10.1021/nn301654e JN:ACS NANO PY:2012
TC:47 AU: Bucaro, Michael A.;Vasquez, Yolanda;Hatton, Benjamin D.;Aizenberg, Joanna;
12:23:8 Fluid and Highly Curved Model Membranes on Vertical Nanowire Arrays
DOI:10.1021/nl500926y JN:NANO LETTERS PY:2014
TC:5 AU: Dabkowska, Aleksandra P.;Niman, Cassandra S.;Piret, Gaelle;Persson, Henrik;Wacklin, Hanna P.;Linke, Heiner;Prinz, Christelle N.;Nylander, Tommy;
12:23:9 Optical Regulation of Protein Adsorption and Cell Adhesion by Photoresponsive GaN Nanowires
DOI:10.1021/am403070g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Li, Jingying;Han, Qiusen;Zhang, Ying;Zhang, Wei;Dong, Mingdong;Besenbacher, Flemming;Yang, Rong;Wang, Chen;
12:23:10 Neurite outgrowth and synaptophysin expression of postnatal CNS neurons on GaP nanowire arrays in long-term retinal cell culture
DOI:10.1016/j.biomaterials.2012.10.042 JN:BIOMATERIALS PY:2013
TC:23 AU: Piret, Gaelle;Perez, Maria-Thereza;Prinz, Christelle N.;
12:23:11 Characterization of the Cell-Nanopillar Interface by Transmission Electron Microscopy
DOI:10.1021/nl303163y JN:NANO LETTERS PY:2012
TC:38 AU: Hanson, Lindsey;Lin, Ziliang Carter;Xie, Chong;Cui, Yi;Cui, Bianxiao;
12:23:12 Intact Mammalian Cell Function on Semiconductor Nanowire Arrays: New Perspectives for Cell-Based Biosensing
DOI:10.1002/smll.201001642 JN:SMALL PY:2011
TC:33 AU: Berthing, Trine;Bonde, Sara;Sorensen, Claus B.;Utko, Pawel;Nygard, Jesper;Martinez, Karen L.;
12:23:13 Fibroblasts Cultured on Nanowires Exhibit Low Motility, Impaired Cell Division, and DNA Damage
DOI:10.1002/smll.201300644 JN:SMALL PY:2013
TC:23 AU: Persson, Henrik;Kobler, Carsten;Molhave, Kristian;Samuelson, Lars;Tegenfeldt, Jonas O.;Oredsson, Stina;Prinz, Christelle N.;
12:23:14 Culture of mammalian cells on patterned superhydrophilic/superhydrophobic silicon nanowire arrays
DOI:10.1039/c1sm05838j JN:SOFT MATTER PY:2011
TC:44 AU: Piret, Gaelle;Galopin, Elisabeth;Coffinier, Yannick;Boukherroub, Rabah;Legrand, Dominique;Slomianny, Christian;
12:23:15 A Transparent Nanowire-Based Cell Impalement Device Suitable for Detailed Cell-Nanowire Interaction Studies
DOI:10.1002/smll.201201314 JN:SMALL PY:2013
TC:19 AU: Mumm, Florian;Beckwith, Kai M.;Bonde, Sara;Martinez, Karen L.;Sikorski, Pawel;
12:23:16 Probing Enzymatic Activity inside Living Cells Using a Nanowire-Cell "Sandwich" Assay
DOI:10.1021/nl3037068 JN:NANO LETTERS PY:2013
TC:23 AU: Na, Yu-Ran;Kim, So Yeon;Gaublomme, Jellert T.;Shalek, Alex K.;Jorgolli, Marsela;Park, Hongkun;Yang, Eun Gyeong;
12:23:17 Modulation of Fluorescence Signals from Biomolecules along Nanowires Due to Interaction of Light with Oriented Nanostructures
DOI:10.1021/n1503344y JN:NANO LETTERS PY:2015
TC:0 AU: Frederiksen, Rune S.;Alarcon-Llado, Esther;Madsen, Morten H.;Rostgaard, Katrine R.;Krogstrup, Peter;Vosch, Tom;Nygard, Jesper;Fontcuberta i Morral, Anna;Martinez, Karen L.;
12:23:18 Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging
DOI:10.1088/0957-4484/23/41/415102 JN:NANOTECHNOLOGY PY:2012
TC:26 AU: Berthing, Trine;Bonde, Sara;Rostgaard, Katrine R.;Madsen, Morten Hannibal;Sorensen, Claus B.;Nygard, Jesper;Martinez, Karen L.;
12:23:19 Mechanical Model of Vertical Nanowire Cell Penetration
DOI:10.1021/nl403201a JN:NANO LETTERS PY:2013
TC:18 AU: Xie, Xi;Xu, Alexander M.;Angle, Matthew R.;Tayebi, Noureddine;Verma, Piyush;Melosh, Nicholas A.;
12:23:20 Collective behaviors of mammalian cells on amine-coated silicon nanowires
DOI:10.1088/0957-4484/24/45/455704 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Kim, So Yeon;Yang, Eun Gyeong;
12:23:21 Nanostraw-Electroporation System for Highly Efficient Intracellular Delivery and Transfection
DOI:10.1021/nn400874a JN:ACS NANO PY:2013
TC:33 AU: Xie, Xi;Xu, Alexander M.;Leal-Ortiz, Sergio;Cao, Yuhong;Garner, Craig C.;Melosh, Nicholas A.;
12:23:22 Nanowire-Mediated Delivery Enables Functional Interrogation of Primary Immune Cells: Application to the Analysis of Chronic Lymphocytic Leukemia
DOI:10.1021/nl3042917 JN:NANO LETTERS PY:2012
TC:31 AU: Shalek, Alex K.;Gaublomme, Jellert T.;Wang, Lili;Yosef, Nir;Chevrier, Nicolas;Andersen, Mette S.;Robinson, Jacob T.;Pochet, Nathalie;Neuberg, Donna;Gertner, Rona S.;Amit, Ido;Brown, Jennifer R.;Hacohen, Nir;Regev, Aviv;Wu, Catherine J.;Park, Hongkun;
12:23:23 Hollow Nanoneedle Array and Its Utilization for Repeated Administration of Biomolecules to the Same Cells
DOI:10.1021/nn300443h JN:ACS NANO PY:2012
TC:19 AU: Peer, Elad;Artzy-Schnirman, Arbel;Gepstein, Lior;Sivan, Uri;
12:23:24 Highly Ordered Large-Scale Neuronal Networks of Individual Cells - Toward Single Cell to 3D Nanowire Intracellular Interfaces
DOI:10.1021/am300602e JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:15 AU: Kwiat, Moria;Elnathan, Roey;Pevzner, Alexander;Peretz, Asher;Barak, Boaz;Peretz, Hagit;Ducobni, Tamir;Stein, Daniel;Mittelman, Leonid;Ashery, Uri;Patolsky, Fernando;
12:23:25 Si Nanowires Forest-Based On-Chip Biomolecular Filtering, Separation and Preconcentration Devices: Nanowires Do it All
DOI:10.1021/nl3021889 JN:NANO LETTERS PY:2012
TC:33 AU: Krivitsky, Vadim;Hsiung, Lo-Chang;Lichtenstein, Amir;Brudnik, Boris;Kantaev, Raisa;Elnathan, Roey;Pevzner, Alexander;Khatchtourints, Artium;Patolsky, Fernando;
12:23:26 Interfacing Electrogenic Cells with 3D Nanoelectrodes: Position, Shape, and Size Matter
DOI:10.1021/nn500393p JN:ACS NANO PY:2014
TC:5 AU: Santoro, Francesca;Dasgupta, Sabyasachi;Schnitker, Jan;Auth, Thorsten;Neumann, Elmar;Panaitov, Gregory;Gompper, Gerhard;Offenhaeusser, Andreas;
12:23:27 Cell responses to metallic nanostructure arrays with complex geometries
DOI:10.1016/j.biomaterials.2014.07.02 JN:BIOMATERIALS PY:2014
TC:3 AU: Jahed, Zeinab;Molladavoodi, Sara;Seo, Brandon B.;Gorbet, Maud;Tsui, Ting Y.;Mofrad, Mohammad R. K.;
12:23:28 Plasma Membrane and Actin Cytoskeleton as Synergistic Barriers to Nanowire Cell Penetration
DOI:10.1021/la502273f JN:LANGMUIR PY:2014
TC:4 AU: Aalipour, Amin;Xu, Alexander M.;Leal-Ortiz, Sergio;Garner, Craig C.;Melosh, Nicholas A.;
12:23:29 Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function
DOI:10.1088/0957-4484/24/28/285101 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Adolfsson, Karl;Schneider, Martina;Hammarin, Greger;Hacker, Udo;Prinz, Christelle N.;
12:23:30 Nanotopography as a trigger for the microscale, autogenous and passive lysis of erythrocytes
DOI:10.1039/c4tb00239c JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2014
TC:1 AU: Pham, Vy T. H.;Vi Khanh Truong;Mainwaring, David E.;Guo, Yachong;Baulin, Vladimir A.;Al Kobaisi, Mohammad;Gervinskas, Gediminas;Juodkazis, Saulius;Zeng, Wendy R.;Doran, Pauline P.;Crawford, Russell J.;Ivanova, Elena P.;
12:23:31 Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires
DOI:10.1088/0957-4484/21/24/245105 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Liu, Yi-Chi C.;Rieben, Nathalie;Iversen, Lars;Sorensen, Brian S.;Park, Jiwoong;Nygard, Jesper;Martinez, Karen L.;
12:23:32 Molecular Motor Propelled Filaments Reveal Light-Guiding in Nanowire Arrays for Enhanced Biosensing
DOI:10.1021/nl404032k JN:NANO LETTERS PY:2014
TC:8 AU: ten Siethoff, Lasse;Lard, Mercy;Generosi, Johanna;Andersson, Hakan S.;Linke, Heiner;Mansson, Alf;
12:23:33 Combined Cell Culture-Biosensing Platform Using Vertically Aligned Patterned Peptide Nanofibers for Cellular Studies
DOI:10.1021/am400390g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:8 AU: Taskin, Mehmet B.;Sasso, Luigi;Dimaki, Maria;Svendsen, Winnie E.;Castillo-Leon, Jaime;
12:23:34 Nanofluidics in hollow nanowires
DOI:10.1088/0957-4484/21/15/155301 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Skold, Niklas;Hallstrom, Waldemar;Persson, Henrik;Montelius, Lars;Kanje, Martin;Samuelson, Lars;Prinz, Christelle N.;Tegenfeldt, Jonas O.;
12:23:35 Defined Patterns of Neuronal Networks on 3D Thiol-functionalized Microstructures
DOI:10.1021/nl502922b JN:NANO LETTERS PY:2014
TC:1 AU: Santoro, Francesca;Panaitov, Gregory;Offenhaeusser, Andreas;
12:23:36 Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF4 and O-2
DOI:10.1063/1.4830277 JN:AIP ADVANCES PY:2013
TC:0 AU: Nabesawa, Hirofumi;Hiruma, Takaharu;Hitobo, Takeshi;Wakabayashi, Suguru;Asaji, Toyohisa;Abe, Takashi;Seki, Minoru;
12:23:37 Biomimetic Cryptic Site Surfaces for Reversible Chemo- and Cyto-Mechanoresponsive Substrates
DOI:10.1021/nn400356p JN:ACS NANO PY:2013
TC:5 AU: Bacharouche, Jalal;Badique, Florent;Fahs, Ahmad;Spanedda, Maria V.;Geissler, Alexandre;Malval, Jean-Pierre;Vallat, Marie-France;Anselme, Karine;Francius, Gregory;Frisch, Benoit;Hemmerle, Joseph;Schaaf, Pierre;Roucoules, Vincent;
12:23:38 Single Vesicle Analysis Reveals Nanoscale Membrane Curvature Selective Pore Formation in Lipid Membranes by an Antiviral alpha-Helical Peptide
DOI:10.1021/nl3029637 JN:NANO LETTERS PY:2012
TC:17 AU: Tabaei, Seyed R.;Rabe, Michael;Zhdanov, Vladimir P.;Cho, Nam-Joon;Hook, Fredrik;
12:23:39 The influence of Leucine-rich amelogenin peptide on MSC fate by inducing Wnt10b expression
DOI:10.1016/j.biomaterials.2011.05.045 JN:BIOMATERIALS PY:2011
TC:11 AU: Wen, Xin;Cawthorn, William P.;MacDougald, Ormond A.;Stupp, Samuel I.;Snead, Malcolm L.;Zhou, Yan;
12:23:40 Silicon nanowire/polycaprolactone composites and their impact on stromal cell function
DOI:10.1557/jmr.2012.265 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:3 AU: Jiang, Ke;Coffer, Jeffery L.;Akkaraju, Giridhar R.;
12:23:41 Enhanced Neurite Outgrowth by Intracellular Stimulation
DOI:10.1021/acs.nanolett.5b01810 JN:NANO LETTERS PY:2015
TC:0 AU: Kim, Ilsoo;Lee, Hye Yeong;Kim, Hyungsuk;Lee, Eungjang;Jeong, Du-Won;Kim, Ju-Jin;Park, Seung-Han;Ha, Yoon;Na, Jukwan;Chae, Youngcheol;Yi, Seong;Choi, Heon-Jin;
12:23:42 White-light-emitting diode based on a single-layer polymer
DOI:10.1063/1.4807735 JN:AIP ADVANCES PY:2013
TC:2 AU: Wang, B. Z.;Zhang, X. P.;Liu, H. M.;
12:23:43 Preparation and photoluminescence properties of silica-coated CuO nanowires
DOI:10.1007/s00339-010-5589-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:4 AU: Jin, Changhyun;Kim, Hyunsoo;Hong, Chanseok;Kim, Hyoun Woo;Lee, Chongmu;
12:23:44 Gelatin/glycerol coating to preserve mechanically compliant nanowire electrodes from damage during brain implantation
DOI:10.1116/1.3498764 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Witteveen, Jolanda A.;Suyatin, Dmitry B.;Gallentoft, Lina;Schouenborg, Jens;Danielsen, Nils;Prinz, Christelle N.;
12:23:45 New approach for measuring protrusive forces in cells
DOI:10.1116/1.3655580 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Mathur, A.;Roca-Cusachs, P.;Rossier, O. M.;Wind, S. J.;Sheetz, M. P.;Hone, J.;
12:23:46 Hydrophobic Amino Acid Adsorption on Surfaces of Varying Wettability
DOI:10.1021/la100716z JN:LANGMUIR PY:2010
TC:10 AU: Trudeau, Travis G.;Hore, Dennis K.;
12:23:47 Nanofountain Probe Electroporation (NFP-E) of Single Cells
DOI:10.1021/nl400423c JN:NANO LETTERS PY:2013
TC:15 AU: Kang, Wonmo;Yavari, Fazel;Minary-Jolandan, Majid;Giraldo-Vela, Juan P.;Safi, Asmahan;McNaughton, Rebecca L.;Parpoil, Victor;Espinosa, Horacio D.;
12:24:1 Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
DOI:10.1103/PhysRevLett.107.025503 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:39 AU: Wen, C. -Y.;Tersoff, J.;Hillerich, K.;Reuter, M. C.;Park, J. H.;Kodambaka, S.;Stach, E. A.;Ross, F. M.;
12:24:2 Predictive modeling of self-catalyzed III-V nanowire growth
DOI:10.1103/PhysRevB.88.195304 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Glas, Frank;Ramdani, Mohammed Reda;Patriarche, Gilles;Harmand, Jean-Christophe;
12:24:3 Nucleation Antibunching in Catalyst-Assisted Nanowire Growth
DOI:10.1103/PhysRevLett.104.135501 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:35 AU: Glas, Frank;Harmand, Jean-Christophe;Patriarche, Gilles;
12:24:4 Growth kinetics of a single InP1-xAsx nanowire
DOI:10.1103/PhysRevB.81.235436 JN:PHYSICAL REVIEW B PY:2010
TC:35 AU: Harmand, Jean-Christophe;Glas, Frank;Patriarche, Gilles;
12:24:5 Chemical potentials for Au-assisted vapor-liquid-solid growth of III-V nanowires
DOI:10.1063/1.3488908 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:31 AU: Glas, Frank;
12:24:6 Self-regulated pulsed nucleation in catalyzed nanowire growth
DOI:10.1103/PhysRevB.87.195426 JN:PHYSICAL REVIEW B PY:2013
TC:11 AU: Dubrovskii, V. G.;
12:24:7 Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires
DOI:10.1063/1.4864276 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Dubrovskii, V. G.;
12:24:8 Step-Flow Kinetics in Nanowire Growth
DOI:10.1103/PhysRevLett.105.195502 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:20 AU: Wen, C. -Y.;Tersoff, J.;Reuter, M. C.;Stach, E. A.;Ross, F. M.;
12:24:9 Influence of shadow effect on the growth and shape of InAs nanowires
DOI:10.1063/1.4718434 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Sibirev, Nickolay V.;Tchernycheva, Maria;Timofeeva, Maria A.;Harmand, Jean-Christophe;Cirlin, George E.;Dubrovskii, Vladimir G.;
12:24:10 Narrowing the Length Distribution of Ge Nanowires
DOI:10.1103/PhysRevLett.108.105501 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:22 AU: Dubrovskii, V. G.;Xu, T.;Lambert, Y.;Nys, J. -P.;Grandidier, B.;Stievenard, D.;Chen, W.;Pareige, P.;
12:24:11 Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.04.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:18 AU: Sartel, C.;Dheeraj, D. L.;Jabeen, F.;Harmand, J. C.;
12:24:12 Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1-xGex/Si/Si1-xGex Nanowire Heterostructures
DOI:10.1021/nl5019707 JN:NANO LETTERS PY:2014
TC:3 AU: Periwal, Priyanka;Sibirev, Nickolay V.;Patriarche, Gilles;Salem, Bassem;Bassani, Franck;Dubrovskii, Vladimir G.;Baron, Thierry;
12:24:13 Role of sidewall diffusion in GaAs nanowire growth: A first-principles study
DOI:10.1103/PhysRevB.86.085425 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Pankoke, Volker;Sakong, Sung;Kratzer, Peter;
12:24:14 Stress-driven island growth on top of nanowires
DOI:10.1103/PhysRevB.86.174112 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Glas, Frank;Daudin, Bruno;
12:24:15 Modeling the nucleation statistics in vapor-liquid-solid nanowires
DOI:10.1016/j.jcrysgro.2013.12.064 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Sibirev, N. V.;Nazarenko, M. V.;Zeze, D. A.;Dubrovskii, V. G.;
12:24:16 Control and understanding of kink formation in InAs-InP heterostructure nanowires
DOI:10.1088/0957-4484/24/34/345601 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Svensson, S. Fahlvik;Jeppesen, S.;Thelander, C.;Samuelson, L.;Linke, H.;Dick, K. A.;
12:24:17 Atomistic modeling of the Au droplet-GaAs interface for size-selective nanowire growth
DOI:10.1103/PhysRevB.88.155309 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Sakong, Sung;Du, Yaojun A.;Kratzer, Peter;
12:24:18 Statistics of sub-Poissonian nucleation in a nanophase
DOI:10.1103/PhysRevB.90.125406 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Glas, Frank;
12:24:19 Crystal growth in LiGaSe2 for semiconductor radiation detection applications
DOI:10.1016/j.jcrysgro.2013.01.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Stowe, A. C.;Woodward, J.;Tupitsyn, E.;Rowe, E.;Wiggins, B.;Matei, L.;Bhattacharya, P.;Burger, A.;
12:24:20 Growth modeling of CdTe nanowires
DOI:10.1088/0957-4484/23/48/485607 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Dubrovskii, Vladimir G.;Bolshakov, Alexey D.;Williams, Benjamin L.;Durose, Ken;
12:24:21 Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures
DOI:10.1088/0957-4484/22/33/335602 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Haapamaki, C. M.;LaPierre, R. R.;
12:24:22 Vapor-liquid-solid growth of Si nanowires: A kinetic analysis
DOI:10.1063/1.4737597 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Shakthivel, Dhayalan;Raghavan, Srinivasan;
12:24:23 GaP/GaAs1-xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire
DOI:10.1016/j.jcrysgro.2010.12.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Jabeen, F.;Patriarche, G.;Glas, F.;Harmand, J. -C.;
12:24:24 InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
DOI:10.1016/j.jcrysgro.2012.12.082 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Harmand, Jean-Christophe;Jabeen, Fauzia;Liu, Linsheng;Patriarche, Gilles;Gauthron, Karine;Senellart, Pascale;Elvira, David;Beveratos, Alexios;
12:24:25 Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy
DOI:10.1016/j.jallcom.2013.05.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Lu, Z. Y.;Chen, P. P.;Liao, Z. M.;Shi, S. X.;Sun, Y.;Li, T. X.;Zhang, Y. H.;Zou, J.;Lu, W.;
12:24:26 Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations
DOI:10.1016/j.jcrysgro.2013.11.067 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Boulanger, J. P.;LaPierre, R. R.;
12:24:27 Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE
DOI:10.1016/j.jcrysgro.2014.12.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Dubrovskii, V. G.;Timofeeva, M. A.;Kelrich, A.;Ritter, D.;
12:24:28 Random stacking sequences in III-V nanowires are correlated
DOI:10.1103/PhysRevB.89.241301 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Priante, Giacomo;Harmand, Jean-Christophe;Patriarche, Gilles;Glas, Frank;
12:24:29 Effects of Be doping on InP nanowire growth mechanisms
DOI:10.1063/1.4773206 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Yee, R. J.;Gibson, S. J.;Dubrovskii, V. G.;LaPierre, R. R.;
12:24:30 Model of step propagation and step bunching at the sidewalls of nanowires
DOI:10.1016/j.jcrysgro.2015.07.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Filimonov, Sergey N.;Hervieu, Yuri Yu.;
12:24:31 Catalytic Role of Gold Nanoparticle in GaAs Nanowire Growth: A Density Functional Theory Study
DOI:10.1021/nl204004p JN:NANO LETTERS PY:2012
TC:12 AU: Kratzer, Peter;Sakong, Sung;Pankoke, Volker;
12:24:32 Growth rate enhancement of InAs nanowire by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.02.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Babu, J. Bubesh;Yoh, Kanji;
12:24:33 Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy
DOI:10.1088/0957-4484/24/47/475302 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Kelrich, A.;Calahorra, Y.;Greenberg, Y.;Gavrilov, A.;Cohen, S.;Ritter, D.;
12:24:34 Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As-4 source
DOI:10.1016/j.jcrysgro.2011.04.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Li, X.;Guo, H.;Yin, Z.;Shi, T.;Wen, L.;Zhao, Z.;Liu, M.;Ma, W.;Wang, Y.;
12:24:35 Step bunching in the absence of an Ehrlich-Schwoebel barrier during nanowire growth
DOI:10.1063/1.3290865 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Golovin, A. A.;Davis, S. H.;Voorhees, P. W.;
12:24:36 Thermodynamics and kinetics of the growth mechanism of vapor-liquid-solid grown nanowires
DOI:10.1016/j.jcrysgro.2015.04.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Koto, Makoto;
12:24:37 Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE
DOI:10.1016/j.jcrysgro.2010.02.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Bouravleuv, A. D.;Sibirev, N. V.;Statkute, G.;Cirlin, G. E.;Lipsanen, H.;Dubrovskii, V. G.;
12:25:1 High internal and external quantum efficiency InGaN/GaN solar cells
DOI:10.1063/1.3540501 JN:APPLIED PHYSICS LETTERS PY:2011
TC:67 AU: Matioli, Elison;Neufeld, Carl;Iza, Michael;Cruz, Samantha C.;Al-Heji, Ali A.;Chen, Xu;Farrell, Robert M.;Keller, Stacia;DenBaars, Steven;Mishra, Umesh;Nakamura, Shuji;Speck, James;Weisbuch, Claude;
12:25:2 InGaN/GaN multiple quantum well concentrator solar cells
DOI:10.1063/1.3481424 JN:APPLIED PHYSICS LETTERS PY:2010
TC:64 AU: Dahal, R.;Li, J.;Aryal, K.;Lin, J. Y.;Jiang, H. X.;
12:25:3 High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
DOI:10.1063/1.3591976 JN:APPLIED PHYSICS LETTERS PY:2011
TC:42 AU: Farrell, R. M.;Neufeld, C. J.;Cruz, S. C.;Lang, J. R.;Iza, M.;Keller, S.;Nakamura, S.;DenBaars, S. P.;Mishra, U. K.;Speck, J. S.;
12:25:4 High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy
DOI:10.1063/1.3575563 JN:APPLIED PHYSICS LETTERS PY:2011
TC:32 AU: Lang, J. R.;Neufeld, C. J.;Hurni, C. A.;Cruz, S. C.;Matioli, E.;Mishra, U. K.;Speck, J. S.;
12:25:5 The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices
DOI:10.1063/1.3301262 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Wierer, J. J., Jr.;Fischer, A. J.;Koleske, D. D.;
12:25:6 Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
DOI:10.1063/1.4765068 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Lang, J. R.;Young, N. G.;Farrell, R. M.;Wu, Y. -R.;Speck, J. S.;
12:25:7 High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
DOI:10.1063/1.4826483 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Young, N. G.;Farrell, R. M.;Hu, Y. L.;Terao, Y.;Iza, M.;Keller, S.;DenBaars, S. P.;Nakamura, S.;Speck, J. S.;
12:25:8 Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
DOI:10.1063/1.3695170 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Wierer, J. J., Jr.;Koleske, D. D.;Lee, S. R.;
12:25:9 Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
DOI:10.1063/1.4844955 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Farrell, R. M.;Al-Heji, A. A.;Neufeld, C. J.;Chen, X.;Iza, M.;Cruz, S. C.;Keller, S.;Nakamura, S.;DenBaars, S. P.;Mishra, U. K.;Speck, J. S.;
12:25:10 High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
DOI:10.1063/1.4873117 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Young, N. G.;Perl, E. E.;Farrell, R. M.;Iza, M.;Keller, S.;Bowers, J. E.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:25:11 Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells
DOI:10.1063/1.3377900 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Pryce, Imogen M.;Koleske, Daniel D.;Fischer, Arthur J.;Atwater, Harry A.;
12:25:12 Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
DOI:10.1063/1.4900531 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Sundaram, S.;Puybaret, R.;El Gmili, Y.;Li, X.;Bonanno, P. L.;Pantzas, K.;Orsal, G.;Troadec, D.;Cai, Z. -H.;Patriarche, G.;Voss, P. L.;Salvestrini, J. P.;Ougazzaden, A.;
12:25:13 Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
DOI:10.1016/j.jcrysgro.2012.08.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Pantzas, K.;El Gmili, Y.;Dickerson, J.;Gautier, S.;Largeau, L.;Mauguin, O.;Patriarche, G.;Suresh, S.;Moudakir, T.;Bishop, C.;Ahaitouf, A.;Rivera, T.;Tanguy, C.;Voss, P. L.;Ougazzaden, A.;
12:25:14 Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
DOI:10.1088/0957-4484/23/45/455707 JN:NANOTECHNOLOGY PY:2012
TC:13 AU: Pantzas, K.;Patriarche, G.;Troadec, D.;Gautier, S.;Moudakir, T.;Suresh, S.;Largeau, L.;Mauguin, O.;Voss, P. L.;Ougazzaden, A.;
12:25:15 Finite element simulations of compositionally graded InGaN solar cells
DOI:10.1016/j.solmat.2009.11.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:65 AU: Brown, G. F.;Ager, J. W., III;Walukiewicz, W.;Wu, J.;
12:25:16 Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells
DOI:10.1063/1.3327331 JN:APPLIED PHYSICS LETTERS PY:2010
TC:40 AU: Lai, K. Y.;Lin, G. J.;Lai, Y. -L.;Chen, Y. F.;He, J. H.;
12:25:17 Efficiency enhancement of InGaN multi-quantum-well solar cells via light-harvesting SiO2 nano-honeycombs
DOI:10.1063/1.3673838 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Fu, P. H.;Lin, G. J.;Ho, C. H.;Lin, C. A.;Kang, C. F.;Lai, Y. L.;Lai, K. Y.;He, J. H.;
12:25:18 Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
DOI:10.1063/1.3595487 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Neufeld, Carl J.;Cruz, Samantha C.;Farrell, Robert M.;Iza, Michael;Lang, Jordan R.;Keller, Stacia;Nakamura, Shuji;DenBaars, Steven P.;Speck, James S.;Mishra, Umesh K.;
12:25:19 Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride p-i-n solar cells
DOI:10.1063/1.4829443 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Yao, Yung-Chi;Tsai, Meng-Tsan;Huang, Chun-Ying;Lin, Tai-Yuan;Sheu, Jinn-Kong;Lee, Ya-Ju;
12:25:20 InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices
DOI:10.1063/1.4723831 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Toledo, Nikholas G.;Mishra, Umesh K.;
12:25:21 Characteristics of the surface microstructures in thick InGaN layers on GaN
DOI:10.1364/OME.3.001111 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:3 AU: El Gmili, Y.;Orsal, G.;Pantzas, K.;Ahaitouf, A.;Moudakir, T.;Gautier, S.;Patriarche, G.;Troadec, D.;Salvestrini, J. P.;Ougazzaden, A.;
12:25:22 Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices
DOI:10.1063/1.3690907 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Toledo, Nikholas G.;Friedman, Daniel J.;Farrell, Robert M.;Perl, Emmett E.;Lin, Chieh-Ting (Tony);Bowers, John E.;Speck, James S.;Mishra, Umesh K.;
12:25:23 Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
DOI:10.1016/j.actamat.2013.07.041 JN:ACTA MATERIALIA PY:2013
TC:3 AU: El Gmili, Y.;Orsal, G.;Pantzas, K.;Moudakir, T.;Sundaram, S.;Patriarche, G.;Hester, J.;Ahaitouf, A.;Salvestrini, J. P.;Ougazzaden, A.;
12:25:24 Efficiency enhancement of InGaN/GaN solar cells with nanostructures
DOI:10.1063/1.4864640 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Bai, J.;Yang, C. C.;Athanasiou, M.;Wang, T.;
12:25:25 Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells
DOI:10.1063/1.3484040 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Feng, Shih-Wei;Lai, Chih-Ming;Chen, Chien-Hsun;Sun, Wen-Ching;Tu, Li-Wei;
12:25:26 Modeling of InGaN p-n junction solar cells
DOI:10.1364/OME.3.001777 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:3 AU: Feng, Shih-Wei;Lai, Chih-Ming;Tsai, Chin-Yi;Su, Yu-Ru;Tu, Li-Wei;
12:25:27 Microdome InGaN-based multiple quantum well solar cells
DOI:10.1063/1.4734380 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Ho, Cheng-Han;Lai, Kun-Yu;Lin, Chin-An;Lin, Guan-Jhong;Hsing, Meng-Kai;He, Jr-Hau;
12:25:28 Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells
DOI:10.1063/1.4893024 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Cavassilas, Nicolas;Michelini, Fabienne;Bescond, Marc;
12:25:29 Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
DOI:10.1063/1.3624850 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Neufeld, Carl J.;Cruz, Samantha C.;Farrell, Robert M.;Iza, Michael;Keller, Stacia;Nakamura, Shuji;DenBaars, Steven P.;Speck, James S.;Mishra, Umesh K.;
12:25:30 Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate
DOI:10.1063/1.3605244 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Lee, Ya-Ju;Lee, Min-Hung;Cheng, Chun-Mao;Yang, Chia-Hao;
12:25:31 Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
DOI:10.1063/1.4704189 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Hu, Yan-Ling;Farrell, Robert M.;Neufeld, Carl J.;Iza, Michael;Cruz, Samantha C.;Pfaff, Nathan;Simeonov, Dobri;Keller, Stacia;Nakamura, Shuji;DenBaars, Steven P.;Mishra, Umesh K.;Speck, James S.;
12:25:32 Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell
DOI:10.1016/j.solmat.2011.07.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Asgari, Asghar;Khalili, Kh.;
12:25:33 Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
DOI:10.1016/j.tsf.2010.03.163 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Wang, H.;Jiang, D. S.;Jahn, U.;Zhu, J. J.;Zhao, D. G.;Liu, Z. S.;Zhang, S. M.;Yang, H.;
12:25:34 Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells
DOI:10.1063/1.4813623 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Choi, Sang-Bae;Shim, Jae-Phil;Kim, Dong-Min;Jeong, Hoon-Il;Jho, Young-Dahl;Song, Young-Ho;Lee, Dong-Seon;
12:25:35 Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
DOI:10.1016/j.mseb.2012.10.033 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:4 AU: Gorge, V.;Migan-Dubois, A.;Djebbour, Z.;Pantzas, K.;Gautier, S.;Moudakir, T.;Suresh, S.;Ougazzaden, A.;
12:25:36 Characterization of InGaN-based photovoltaic devices by varying the indium contents
DOI:10.1016/j.tsf.2012.06.024 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Huang, Chien-Fei;Hsieh, Wen-Yang;Hsieh, Bing-Cheng;Hsieh, Chang-Hua;Lin, Chia-Feng;
12:25:37 Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
DOI:10.1063/1.4896679 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Redaelli, L.;Mukhtarova, A.;Valdueza-Felip, S.;Ajay, A.;Bougerol, C.;Himwas, C.;Faure-Vincent, J.;Durand, C.;Eymery, J.;Monroy, E.;
12:25:38 Anisotropic strain relaxation and the resulting degree of polarization by one-and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate
DOI:10.1063/1.4851755 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Feng, Shih-Wei;Chen, Yu-Yu;Lai, Chih-Ming;Tu, Li-Wei;Han, Jung;
12:25:39 Simulation analysis of GaN microdomes with broadband omnidirectional antireflection for concentrator photovoltaics
DOI:10.1063/1.4870714 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Han, Lu;Zhao, Hongping;
12:25:40 Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells
DOI:10.1016/j.jcrysgro.2013.10.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Bae, Si-Young;Song, Young-Ho;Jeon, Seong-Ran;Kim, Dong-Min;Jho, Young-Dahl;Lee, Dong-Seon;
12:25:41 Simulation of doping levels and deep levels in InGaN-based single-junction solar cell
DOI:10.1007/s10853-012-6321-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:2 AU: Lin, Shuo;Zeng, Shengwei;Cai, Xiaomei;Zhang, Jiangyong;Wu, Shaoxiong;Sun, Li;Zhang, Baoping;
12:25:42 Close space vapor transport of gallium nitride in vacuum
DOI:10.1016/j.matlet.2013.01.011 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Santana-Rodriguez, G.;de Melo, O.;Aguilar-Hernandez, J.;Mendoza-Perez, R.;Monroy, B. M.;Escamilla-Esquivel, A.;Lopez-Lopez, M.;de Moure, F.;Hernandez, L. A.;Contreras-Puente, G.;
12:25:43 Simulation analysis of the effects of defect density on the performance of p-i-n InGaN solar cell
DOI:10.1007/s00339-012-7062-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Movla, Hossein;Salami, Davood;Sadreddini, Seyed Vahid;
12:25:44 High 400 degrees C operation temperature blue spectrum concentration solar junction in GaInN/GaN
DOI:10.1063/1.4904717 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhao, Liang;Detchprohm, Theeradetch;Wetzel, Christian;
12:25:45 Simulation of N-face InGaN-based p-i-n solar cells
DOI:10.1063/1.4745043 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Chang, Jih-Yuan;Kuo, Yen-Kuang;
12:25:46 InGaN-based solar cells with a tapered GaN structure
DOI:10.1016/j.jcrysgro.2012.09.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Lin, Chia-Feng;Chen, Kuei-Ting;Chen, Sih-Han;Yang, Chung-Chieh;Huang, Wan-Chun;Hsieh, Tsung-Han;
12:25:47 Bandgap energy bowing parameter of strained and relaxed InGaN layers
DOI:10.1364/OME.4.001030 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:5 AU: Orsal, G.;El Gmili, Y.;Fressengeas, N.;Streque, J.;Djerboub, R.;Moudakir, T.;Sundaram, S.;Ougazzaden, A.;Salvestrini, J. P.;
12:25:48 Comment on "The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices" [Appl. Phys. Lett. 96, 051107 (2010)]
DOI:10.1063/1.3544929 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Chang, Jih-Yuan;Kuo, Yen-Kuang;
12:25:49 Optimization of Annealing Process for Improved InGaN Solar Cell Performance
DOI:10.1007/s11664-013-2794-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Das, N. C.;Reed, M. L.;Sampath, A. V.;Shen, H.;Wraback, M.;Farrell, R. M.;Iza, M.;Cruz, S. C.;Lang, J. R.;Young, N. G.;Terao, Y.;Neufeld, C. J.;Keller, S.;Nakamura, S.;Denbaars, S. P.;Mishra, U. K.;Speck, J. S.;
12:25:50 Surface Structured Optical Coatings with Near-Perfect Broadband and Wide-Angle Antireflective Properties
DOI:10.1021/nl502977f JN:NANO LETTERS PY:2014
TC:4 AU: Perl, Emmett E.;McMahon, William E.;Farrell, Robert M.;DenBaars, Steven P.;Speck, James S.;Bowers, John E.;
12:25:51 Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach
DOI:10.1364/OME.3.001093 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:5 AU: Han, Lu;Piedimonte, Tyler A.;Zhao, Hongping;
12:25:52 Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer
DOI:10.1016/j.solmat.2010.03.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:4 AU: Lee, Han Cheng;Su, Yan Kuin;Chuang, Wen Kuei;Lin, Jia Ching;Huang, Kuo Chin;Cheng, Yi Cheng;Chang, Kuo Jen;
12:25:53 InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN/Mg layer
DOI:10.1016/j.tsf.2010.05.007 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Chen, Kuei-Ting;Lin, Chia-Feng;Lin, Chun-Min;Yang, Chung-Chieh;Jiang, Ren-Hao;
12:25:54 Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers
DOI:10.1007/s00339-012-7486-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Cai, X. M.;Wang, Y.;Li, Z. D.;Lv, X. Q.;Zhang, J. Y.;Ying, L. Y.;Zhang, B. P.;
12:25:55 High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
DOI:10.1063/1.3641476 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Aoyagi, Yoshinobu;Takeuchi, Misaichi;Iwai, Sohachi;Hirayama, Hideki;
12:25:56 Strain-balanced InGaN/GaN multiple quantum wells
DOI:10.1063/1.4890738 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Van den Broeck, D. M.;Bharrat, D.;Hosalli, A. M.;El-Masry, N. A.;Bedair, S. M.;
12:25:57 Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer
DOI:10.1016/j.jcrysgro.2012.08.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Hwang, Jeongwoo;Lee, Kwanjae;Kim, Jin Soo;Lee, Cheul-Ro;Lee, In-Hwan;Lee, Kwangjae;Lee, Jin Hong;Leem, Jae-Young;Kim, Jong Su;Ryou, Jae-Hyun;Dupuis, Russell D.;
12:25:58 Nitride-based concentrator solar cells grown on Si substrates
DOI:10.1016/j.solmat.2013.05.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:3 AU: Liu, C. Y.;Lai, C. C.;Liao, J. H.;Cheng, L. C.;Liu, H. H.;Chang, C. C.;Lee, G. Y.;Chyi, J. -I.;Yeh, L. K.;He, J. H.;Chung, T. Y.;Huang, L. C.;Lai, K. Y.;
12:25:59 Structural, optical and electrical study of undoped GaN layers obtained by metalorganic chemical vapor deposition on sapphire substrates
DOI:10.1016/j.tsf.2010.10.053 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Rangel-Kuoppa, Victor-Tapio;Guarneros Aguilar, Cesia;Sanchez-Resendiz, Victor;
12:25:60 Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2013.02.050 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Shin, Eun-Jung;Lim, Se-Hwan;Jeong, Myoungho;Lim, Dong Seok;Han, Seok Kyu;Lee, Hyo Sung;Hong, Soon-Ku;Lee, Jeong Yong;Yao, Takafumi;
12:26:1 Single-Nanowire Single-Mode Laser
DOI:10.1021/nl1040308 JN:NANO LETTERS PY:2011
TC:73 AU: Xiao, Yao;Meng, Chao;Wang, Pan;Ye, Yu;Yu, Huakang;Wang, Shanshan;Gu, Fuxing;Dai, Lun;Tong, Limin;
12:26:2 On-Nanowire Spatial Band Gap Design for White Light Emission
DOI:10.1021/nl203529h JN:NANO LETTERS PY:2011
TC:29 AU: Yang, Zongyin;Xu, Jinyou;Wang, Pan;Zhuang, Xiujuan;Pan, Anlian;Tong, Limin;
12:26:3 Composition and Bandgap-Graded Semiconductor Alloy Nanowires
DOI:10.1002/adma.201103191 JN:ADVANCED MATERIALS PY:2012
TC:33 AU: Zhuang, Xiujuan;Ning, C. Z.;Pan, Anlian;
12:26:4 Spatial Bandgap Engineering along Single Alloy Nanowires
DOI:10.1021/ja110092a JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:34 AU: Gu, Fuxing;Yang, Zongyin;Yu, Huakang;Xu, Jinyou;Wang, Pan;Tong, Limin;Pan, Anlian;
12:26:5 Nanowire Transformation by Size-Dependent Cation Exchange Reactions
DOI:10.1021/nl903059c JN:NANO LETTERS PY:2010
TC:36 AU: Zhang, Bin;Jung, Yeonwoong;Chung, Hee-Suk;Van Vugt, Lambert;Agarwal, Ritesh;
12:26:6 Wavelength Tunable Single Nanowire Lasers Based on Surface Plasmon Polariton Enhanced Burstein-Moss Effect
DOI:10.1021/nl402836x JN:NANO LETTERS PY:2013
TC:19 AU: Liu, Xinfeng;Zhang, Qing;Yip, Jing Ngei;Xiong, Qihua;Sum, Tze Chien;
12:26:7 Spatial Composition Grading of Quaternary ZnCdSSe Alloy Nanowires with Tunable Light Emission between 350 and 710 nm on a Single Substrate
DOI:10.1021/nn901699h JN:ACS NANO PY:2010
TC:53 AU: Pan, Anlian;Liu, Ruibin;Sun, Minghua;Ning, Cun-Zheng;
12:26:8 Room-Temperature Dual-Wavelength Lasing from Single-Nanoribbon Lateral Heterostructures
DOI:10.1021/ja3050458 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:16 AU: Xu, Jinyou;Ma, Liang;Guo, Pengfei;Zhuang, Xiujuan;Zhu, Xiaoli;Hu, Wei;Duan, Xiangfeng;Pan, Anlian;
12:26:9 Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires
DOI:10.1021/nl403951f JN:NANO LETTERS PY:2014
TC:10 AU: Ma, Liang;Hu, Wei;Zhang, Qinglin;Ren, Pinyun;Zhuang, Xiujuan;Zhou, Hong;Xu, Jinyou;Li, Honglai;Shan, Zhengping;Wang, Xiaoxia;Liao, Lei;Xu, H. Q.;Pan, Anlian;
12:26:10 Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption
DOI:10.1021/nl304362u JN:NANO LETTERS PY:2013
TC:20 AU: Liu, Xinfeng;Zhang, Qing;Xiong, Qihua;Sum, Tze Chien;
12:26:11 Light-Emitting Polymer Single Nanofibers via Waveguiding Excitation
DOI:10.1021/nn100775v JN:ACS NANO PY:2010
TC:52 AU: Gu, Fuxing;Yu, Huakang;Wang, Pan;Yang, Zongyin;Tong, Limin;
12:26:12 Quantum-Dot-Doped Polymer Nanofibers for Optical Sensing
DOI:10.1002/adma.201101392 JN:ADVANCED MATERIALS PY:2011
TC:43 AU: Meng, Chao;Xiao, Yao;Wang, Pan;Zhang, Lei;Liu, Yanxin;Tong, Limin;
12:26:13 Modulating Resonance Modes and Q Value of a CdS Nanowire Cavity by Single Ag Nanoparticles
DOI:10.1021/nl2022674 JN:NANO LETTERS PY:2011
TC:16 AU: Zhang, Qing;Shan, Xin-Yan;Feng, Xiao;Wang, Chun-Xiao;Wang, Qu-Quan;Jia, Jin-Feng;Xue, Qi-Kun;
12:26:14 Low-Threshold Nanowire Laser Based on Composition-Symmetric Semiconductor Nanowires
DOI:10.1021/nl3047893 JN:NANO LETTERS PY:2013
TC:10 AU: Guo, Pengfei;Zhuang, Xiujuan;Xu, Jinyou;Zhang, Qinglin;Hu, Wei;Zhu, Xiaoli;Wang, Xiaoxia;Wan, Qiang;He, Pengbin;Zhou, Hong;Pan, Anlian;
12:26:15 Resolving Parity and Order of Fabry-Perot Modes in Semiconductor Nanostructure Waveguides and Lasers: Young's Interference Experiment Revisited
DOI:10.1021/nl503176w JN:NANO LETTERS PY:2014
TC:2 AU: Sun, Liaoxin;Ren, Ming-Liang;Liu, Wenjing;Agarwal, Ritesh;
12:26:16 Wavelength-Converted/Selective Waveguiding Based on Composition-Graded Semiconductor Nanowires
DOI:10.1021/nl302693c JN:NANO LETTERS PY:2012
TC:17 AU: Xu, Jinyou;Zhuang, Xiujuan;Guo, Pengfei;Zhang, Qinglin;Huang, Weiqing;Wan, Qiang;Hu, Wei;Wang, Xiaoxia;Zhu, Xiaoli;Fan, Changzeng;Yang, Zongyin;Tong, Limin;Duan, Xiangfeng;Pan, Anlian;
12:26:17 Gold substrate-induced single-mode lasing of GaN nanowires
DOI:10.1063/1.4768300 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Xu, Huiwen;Wright, Jeremy B.;Hurtado, Antonio;Li, Qiming;Luk, Ting-Shan;Figiel, Jeffrey J.;Cross, Karen;Balakrishnan, Ganesh;Lester, Luke F.;Brener, Igal;Wang, George T.;
12:26:18 Dilute tin-doped CdS nanowires for low-loss optical waveguiding
DOI:10.1039/c3tc30492b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Xu, Jinyou;Zhuang, Xiujuan;Guo, Pengfei;Zhang, Qinglin;Ma, Liang;Wang, Xiaoxia;Zhu, Xiaoli;Pan, Anlian;
12:26:19 Single-Step Synthesis of Monolithic Comb-like CdS Nanostructures with Tunable Waveguide Properties
DOI:10.1021/nl401726z JN:NANO LETTERS PY:2013
TC:6 AU: Liu, Ruibin;Li, Zi-An;Zhang, Chunhua;Wang, Xiaoxu;Kamran, Muhammad A.;Farle, Michael;Zou, Bingsuo;
12:26:20 Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires
DOI:10.1021/nl500432m JN:NANO LETTERS PY:2014
TC:6 AU: Yang, Zongyin;Wang, Delong;Meng, Chao;Wu, Zhemin;Wang, Yong;Ma, Yaoguang;Dai, Lun;Liu, Xiaowei;Hasan, Tawfique;Liu, Xu;Yang, Qing;
12:26:21 Wavelength Tunable CdSe Nanowire Lasers Based on the Absorption-Emission-Absorption Process
DOI:10.1002/adma.201203692 JN:ADVANCED MATERIALS PY:2013
TC:16 AU: Li, Jiabei;Meng, Chao;Liu, Ying;Wu, Xiaoqin;Lu, Yize;Ye, Yu;Dai, Lun;Tong, Limin;Liu, Xu;Yang, Qing;
12:26:22 Single mode lasing in coupled nanowires
DOI:10.1063/1.3610965 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Xiao, Yao;Meng, Chao;Wu, Xiaoqin;Tong, Limin;
12:26:23 Propagation Loss Spectroscopy on Single Nanowire Active Waveguides
DOI:10.1021/nl101352s JN:NANO LETTERS PY:2010
TC:21 AU: Piccione, Brian;van Vugt, Lambert K.;Agarwal, Ritesh;
12:26:24 Three Synthetic Routes to Single-Crystalline PbS Nanowires with Controlled Growth Direction and Their Electrical Transport Properties
DOI:10.1021/nn100163k JN:ACS NANO PY:2010
TC:26 AU: Jang, So Young;Song, Yun Mi;Kim, Han Sung;Cho, Yong Jae;Seo, Young Suk;Jung, Gyeong Bok;Lee, Chi-Woo;Park, Jeunghee;Jung, Minkyung;Kim, Jinhee;Kim, Bongsoo;Kim, Jin-Gyu;Kim, Youn-Joong;
12:26:25 Optical Waveguide Based on a Polarized Polydiacetylene Microtube
DOI:10.1002/adma.201305712 JN:ADVANCED MATERIALS PY:2014
TC:5 AU: Hu, Wenlong;Chen, Yikai;Jiang, Hao;Li, Jingguo;Zou, Gang;Zhang, Qijin;Zhang, Douguo;Wang, Pei;Ming, Hai;
12:26:26 Pigtailed CdS nanoribbon ring laser
DOI:10.1063/1.3501969 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Ma, Yaoguang;Li, Xiyuan;Yang, Zongyin;Yu, Huakang;Wang, Pan;Tong, Limin;
12:26:27 Two-photon pumped lasing in a single CdS microwire
DOI:10.1063/1.4809537 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Zhang, Lichao;Wang, Kai;Liu, Zhe;Yang, Guang;Shen, Guozhen;Lu, Peixiang;
12:26:28 Origin of high propagation loss in electrospun polymer nanofibers
DOI:10.1063/1.4884217 JN:APL MATERIALS PY:2014
TC:0 AU: Ishii, Yuya;Satozono, Shota;Kaminose, Ryohei;Fukuda, Mitsuo;
12:26:29 Low threshold room-temperature lasing of CdS nanowires
DOI:10.1088/0957-4484/23/36/365204 JN:NANOTECHNOLOGY PY:2012
TC:15 AU: Geburt, Sebastian;Thielmann, Andreas;Roeder, Robert;Borschel, Christian;McDonnell, Amanda;Kozlik, Michael;Kuehnel, Julian;Sunter, Kristen A.;Capasso, Federico;Ronning, Carsten;
12:26:30 Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation
DOI:10.1021/nl4029686 JN:NANO LETTERS PY:2013
TC:9 AU: Liu, Zhicheng;Yin, Leijun;Ning, Hao;Yang, Zongyin;Tong, Limin;Ning, Cun-Zheng;
12:26:31 Single-mode lasing of GaN nanowire-pairs
DOI:10.1063/1.4751862 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Xu, Huiwen;Wright, Jeremy B.;Luk, Ting-Shan;Figiel, Jeffery J.;Cross, Karen;Lester, Luke F.;Balakrishnan, Ganesh;Wang, George T.;Brener, Igal;Li, Qiming;
12:26:32 Optical Modulation of Waveguiding in Spiropyran-Functionalized Polydiacetylene Microtube
DOI:10.1021/am504082u JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Xia, Hongyan;Chen, Yikai;Yang, Guang;Zou, Gang;Zhang, Qijin;Zhang, Douguo;Wang, Pei;Ming, Hai;
12:26:33 Ultrafast Dynamics of Lasing Semiconductor Nanowires
DOI:10.1021/acs.nanolett.5b01271 JN:NANO LETTERS PY:2015
TC:0 AU: Roeder, Robert;Sidiropoulos, Themistoklis P. H.;Tessarek, Christian;Christiansen, Silke;Oulton, Rupert F.;Ronning, Carsten;
12:26:34 Polarization switching in GaN nanowire lasers
DOI:10.1063/1.4835115 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Hurtado, A.;Xu, H.;Wright, J. B.;Liu, Sheng;Li, Q.;Wang, G. T.;Luk, T. S.;Figiel, J. J.;Cross, K.;Balakrishnan, G.;Lester, L. F.;Brener, I.;
12:26:35 Freestanding nanowire ring laser
DOI:10.1063/1.4827251 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hu, Zhifang;Guo, Xin;Tong, Limin;
12:26:36 Real-Time Observation of Morphological Transformations in II-VI Semiconducting Nanobelts via Environmental Transmission Electron Microscopy
DOI:10.1021/acs.nanolett.5b00520 JN:NANO LETTERS PY:2015
TC:0 AU: Agarwal, Rahul;Zakharov, Dmitri N.;Krook, Nadia M.;Liu, Wenjing;Berger, Jacob S.;Stach, Eric A.;Agarwal, Ritesh;
12:26:37 Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers
DOI:10.1063/1.3672032 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Liu, R. B.;Zhuang, X. J.;Xu, J. Y.;Li, D. B.;Zhang, Q. L.;Ding, K.;He, P. B.;Ning, C. Z.;Zou, B. S.;Pan, A. L.;
12:26:38 Distributed feedback gallium nitride nanowire lasers
DOI:10.1063/1.4862193 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wright, Jeremy B.;Campione, Salvatore;Liu, Sheng;Martinez, Julio A.;Xu, Huiwen;Luk, Ting S.;Li, Qiming;Wang, George T.;Swartzentruber, Brian S.;Lester, Luke F.;Brener, Igal;
12:26:39 Polymer-clad electrospun polymer nanofiber waveguides
DOI:10.1016/j.matlet.2013.07.006 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Ishii, Yuya;Kaminose, Ryohei;Fukuda, Mitsuo;
12:26:40 Self-catalytic growth of CdS nanobelt and its Fabry-Perot lasing action
DOI:10.1016/j.matlet.2014.02.095 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Dai, Jun;Xu, Chunxiang;Li, Jitao;Tian, Zhengshan;Lin, Yi;
12:26:41 Broad spectral response in composition-graded CdSSe single nanowires via waveguiding excitation
DOI:10.1063/1.3657523 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Gu, Fuxing;Yu, Huakang;Fang, Wei;Tong, Limin;
12:26:42 CdxPb1-xS Alloy Nanowires and Heterostructures with Simultaneous Emission in Mid-Infrared and Visible Wavelengths
DOI:10.1021/nl503640x JN:NANO LETTERS PY:2015
TC:0 AU: Nichols, Patricia L.;Liu, Zhicheng;Yin, Leijun;Turkdogan, Sunay;Fan, Fan;Ning, C. Z.;
12:26:43 Mismatched alloy nanowires for electronic structure tuning
DOI:10.1063/1.3666223 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Yim, Joanne W. L.;Grigoropoulos, Costas P.;Wu, Junqiao;
12:26:44 Complete composition tunability of Cd1-xZnxTe alloy nanostructures along a single substrate
DOI:10.1016/j.matlet.2013.04.054 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Wang, Yicheng;Xu, Jinyou;Ren, Pinyun;Zhuang, Xiujuan;Zhou, Hong;Zhang, Qinglin;Zhu, Xiaoli;Pan, Anlian;
12:26:45 CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
DOI:10.1088/0957-4484/21/14/145602 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Kim, Yu Lee;Jung, Jae Hun;Yoon, Hyun Sik;Song, Man Suk;Bae, Se Hwan;Kim, Yong;Chen, Zhi Gang;Zou, Jin;Joyce, Hannah J.;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:26:46 Chalcogenide microwire based Raman laser
DOI:10.1063/1.4751850 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ahmad, Raja;Rochette, Martin;
12:26:47 Model for reflection and transmission matrices of nanowire end facets
DOI:10.1063/1.3583496 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Svendsen, Guro K.;Weman, Helge;Skaar, Johannes;
12:26:48 Investigations of Bragg reflectors in nanowire lasers
DOI:10.1063/1.4729529 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Svendsen, Guro K.;Weman, Helge;Skaar, Johannes;
12:26:49 Tunable two-photon pumped lasing from alloyed semiconductor nanoribbons
DOI:10.1039/c0jm04437g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:2 AU: Jiang, Jidong;Liao, Qing;Zhao, Yong Sheng;Yao, Jiannian;
12:26:50 Photosensitivity at 1550 nm and Bragg grating inscription in As2Se3 chalcogenide microwires
DOI:10.1063/1.3625942 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Ahmad, Raja;Rochette, Martin;
12:26:51 A multicolor microfluidic droplet dye laser with single mode emission
DOI:10.1063/1.3565242 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Aubry, G.;Kou, Q.;Soto-Velasco, J.;Wang, C.;Meance, S.;He, J. J.;Haghiri-Gosnet, A. M.;
12:27:1 Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires
DOI:10.1021/nl9033158 JN:NANO LETTERS PY:2010
TC:56 AU: Koren, Elad;Berkovitch, Noel;Rosenwaks, Yossi;
12:27:2 Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires
DOI:10.1021/nl103363c JN:NANO LETTERS PY:2011
TC:40 AU: Koren, E.;Hyun, J. K.;Givan, U.;Hemesath, E. R.;Lauhon, L. J.;Rosenwaks, Y.;
12:27:3 Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires
DOI:10.1021/nl103773e JN:NANO LETTERS PY:2011
TC:35 AU: Fukata, Naoki;Ishida, Shinya;Yokono, Shigeki;Takiguchi, Ryo;Chen, Jun;Sekiguchi, Takashi;Murakami, Kouichi;
12:27:4 Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor-Liquid-Solid-Grown Nanowires
DOI:10.1021/nl3038695 JN:NANO LETTERS PY:2013
TC:15 AU: Connell, Justin G.;Yoon, KunHo;Perea, Daniel E.;Schwalbach, Edwin J.;Voorhees, Peter W.;Lauhon, Lincoln J.;
12:27:5 Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers
DOI:10.1021/nl4035412 JN:NANO LETTERS PY:2013
TC:8 AU: Yoon, KunHo;Hyun, Jerome K.;Connell, Justin G.;Amit, Iddo;Rosenwaks, Yossi;Lauhon, Lincoln J.;
12:27:6 Spatially Resolved Correlation of Active and Total Doping Concentrations in VLS Grown Nanowires
DOI:10.1021/nl4007062 JN:NANO LETTERS PY:2013
TC:14 AU: Amit, Iddo;Givan, Uri;Connell, Justin G.;Paul, Dennis F.;Hammond, John S.;Lauhon, Lincoln J.;Rosenwaks, Yossi;
12:27:7 Boron distribution in the core of Si nanowire grown by chemical vapor deposition
DOI:10.1063/1.4714364 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Chen, Wanghua;Dubrovskii, Vladimir G.;Liu, Xiaolong;Xu, Tao;Larde, Rodrigue;Nys, Jean Philippe;Grandidier, Bruno;Stievenard, Didier;Patriarche, Gilles;Pareige, Philippe;
12:27:8 Modulation of Thermoelectric Power Factor via Radial Dopant Inhomogeneity in B-Doped Si Nanowires
DOI:10.1021/ja5055884 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:0 AU: Zhuge, Fuwei;Yanagida, Takeshi;Fukata, Naoki;Uchida, Ken;Kanai, Masaki;Nagashima, Kazuki;Meng, Gang;He, Yong;Rahong, Sakon;Li, Xiaomin;Kawai, Tomoji;
12:27:9 Spin transport in dangling-bond wires on doped H-passivated Si(100)
DOI:10.1088/0957-4484/25/46/465703 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Kepenekian, Mikael;Robles, Roberto;Rurali, Riccardo;Lorente, Nicols;
12:27:10 Ab initio calculation of the binding energy of impurities in semiconductors: Application to Si nanowires
DOI:10.1103/PhysRevB.81.161301 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Niquet, Y. M.;Genovese, L.;Delerue, C.;Deutsch, T.;
12:27:11 Direct measurement of nanowire Schottky junction depletion region
DOI:10.1063/1.3665182 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Koren, E.;Berkovitch, N.;Azriel, O.;Boag, A.;Rosenwaks, Y.;Hemesath, E. R.;Lauhon, L. J.;
12:27:12 Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire
DOI:10.1088/0957-4484/24/41/415202 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Bercu, Bogdan;Geng, Wei;Simonetti, Olivier;Kostcheev, Sergei;Sartel, Corinne;Sallet, Vincent;Lerondel, Gilles;Molinari, Michael;Giraudet, Louis;Couteau, Christophe;
12:27:13 Stability and Segregation of B and P Dopants in Si/SiO2 Core-Shell Nanowires
DOI:10.1021/nl3013924 JN:NANO LETTERS PY:2012
TC:8 AU: Kim, Sunghyun;Park, Ji-Sang;Chang, K. J.;
12:27:14 Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation
DOI:10.1021/nl403004u JN:NANO LETTERS PY:2013
TC:3 AU: Petretto, Guido;Debernardi, Alberto;Fanciulli, Marco;
12:27:15 Silicon nanowires: electron holography studies of doped p-n junctions and biased Schottky barriers
DOI:10.1088/0957-4484/24/11/115703 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: He, Kai;Cho, Jeong-Hyun;Jung, Yeonwoong;Picraux, S. Tom;Cumings, John;
12:27:16 Direct Measurement of Individual Deep Traps in Single Silicon Nanowires
DOI:10.1021/nl201019b JN:NANO LETTERS PY:2011
TC:19 AU: Koren, E.;Elias, G.;Boag, A.;Hemesath, E. R.;Lauhon, L. J.;Rosenwaks, Y.;
12:27:17 Charged dopants in semiconductor nanowires under partially periodic boundary conditions
DOI:10.1103/PhysRevB.83.245440 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Chan, Tzu-Liang;Zhang, S. B.;Chelikowsky, James R.;
12:27:18 Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers
DOI:10.1021/nn304199w JN:ACS NANO PY:2012
TC:8 AU: Hazut, Ori;Agarwala, Arunava;Amit, Iddo;Subramani, Thangavel;Zaidiner, Seva;Rosenwaks, Yossi;Yerushalmi, Roie;
12:27:19 Direct measurement of surface states density and energy distribution in individual InAs nanowires
DOI:10.1063/1.4731211 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Halpern, E.;Elias, G.;Kretinin, A. V.;Shtrikman, H.;Rosenwaks, Y.;
12:27:20 Surface depletion effects in semiconducting nanowires having a non-uniform radial doping profile
DOI:10.1063/1.4823517 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Calahorra, Yonatan;Ritter, Dan;
12:27:21 Atomistic Study on Dopant-Distributions in Realistically Sized, Highly P-Doped Si Nanowires
DOI:10.1021/nl503770z JN:NANO LETTERS PY:2015
TC:0 AU: Ryu, Hoon;Kim, Jongseob;Hong, Ki-Ha;
12:27:22 Convergence study of neutral and charged defect formation energies in Si nanowires
DOI:10.1103/PhysRevB.81.235304 JN:PHYSICAL REVIEW B PY:2010
TC:17 AU: Rurali, Riccardo;Palummo, Maurizia;Cartoixa, Xavier;
12:27:23 Dopant binding energies in P-doped Ge[110] nanowires using real-space pseudopotentials
DOI:10.1103/PhysRevB.89.075419 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Lee, Alex J.;Chan, Tzu-Liang;Chelikowsky, James R.;
12:27:24 Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy
DOI:10.1088/0957-4484/23/40/405706 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Bae, S-S;Prokopuk, N.;Quitoriano, N. J.;Adams, S. M.;Ragan, R.;
12:27:25 Quantum confinement, core level shifts, and dopant segregation in P-doped Si < 110 > nanowires
DOI:10.1103/PhysRevB.82.153413 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Han, Jiaxin;Chan, Tzu-Liang;Chelikowsky, James R.;
12:27:26 Parallel p-n Junctions across Nanowires by One-Step Ex Situ Doping
DOI:10.1021/nn502855k JN:ACS NANO PY:2014
TC:1 AU: Hazut, Ori;Huang, Bo-Chao;Pantzer, Adi;Amit, Iddo;Rosenwaks, Yossi;Kohn, Amit;Chang, Chia-Seng;Chiu, Ya-Ping;Yerushalmis, Roie;
12:27:27 Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography
DOI:10.1063/1.4824775 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Gan, Zhaofeng;Perea, Daniel E.;Yoo, Jinkyoung;Picraux, S. Tom;Smith, David J.;McCartney, Martha R.;
12:27:28 Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
DOI:10.1088/0957-4484/22/31/315710 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Murthy, D. H. K.;Xu, T.;Chen, W. H.;Houtepen, A. J.;Savenije, T. J.;Siebbeles, L. D. A.;Nys, J. P.;Krzeminski, C.;Grandidier, B.;Stievenard, D.;Pareige, P.;Jomard, F.;Patriarche, G.;Lebedev, O. I.;
12:27:29 Interpreting Kelvin probe force microscopy under an applied electric field: local electronic behavior of vapor-liquid-solid Si nanowires
DOI:10.1088/0957-4484/24/20/205704 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Quitoriano, Nathaniel J.;Sanderson, Robert N.;Bae, Sung-Soo;Ragan, Regina;
12:27:30 Confinement Effects and Hyperfine Structure in Se Doped Silicon Nanowires
DOI:10.1021/nl202803n JN:NANO LETTERS PY:2011
TC:5 AU: Petretto, Guido;Debernardi, Alberto;Fanciulli, Marco;
12:27:31 First-Principles Study of Silicon Nanowire Approaching the Bulk Limit
DOI:10.1021/nl2026212 JN:NANO LETTERS PY:2011
TC:16 AU: Ng, Man-Fai;Sullivan, Michael B.;Tong, Shi Wun;Wu, Ping;
12:27:32 Ab Initio Study of Phosphorus Donors Acting as Quantum Bits in Silicon Nanowires
DOI:10.1021/nl300816t JN:NANO LETTERS PY:2012
TC:4 AU: Yan, Binghai;Rurali, Riccardo;Gali, Adam;
12:27:33 Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires
DOI:10.1021/nl300802x JN:NANO LETTERS PY:2012
TC:10 AU: Sato, Keisuke;Castaldini, Antonio;Fukata, Naoki;Cavallini, Anna;
12:27:34 Preparing the Way for Doping Wurtzite Silicon Nanowires while Retaining the Phase
DOI:10.1021/nl4028445 JN:NANO LETTERS PY:2013
TC:5 AU: Fabbri, Filippo;Rotunno, Enzo;Lazzarini, Laura;Cavalcoli, Daniela;Castaldini, Antonio;Fukata, Naoki;Sato, Keisuke;Salviati, Giancarlo;Cavallini, Anna;
12:27:35 Electronic Transport in Natively Oxidized Silicon Nanowires
DOI:10.1021/nn103363y JN:ACS NANO PY:2011
TC:8 AU: Koleini, Mohammad;Ciacchi, Lucio Colombi;Fernandez-Serra, Maria Victoria;
12:27:36 Molecular Doping and Subsurface Dopant Reactivation in Si Nanowires
DOI:10.1021/nl101894q JN:NANO LETTERS PY:2010
TC:15 AU: Miranda-Duran, Alvaro;Cartoixa, Xavier;Cruz Irisson, Miguel;Rurali, Riccardo;
12:27:37 Seebeck Coefficient of Nanowires Interconnected into Large Area Networks
DOI:10.1021/nl400705b JN:NANO LETTERS PY:2013
TC:4 AU: Pennelli, Giovanni;Totaro, Massimo;Piotto, Massimo;Bruschi, Paolo;
12:27:38 Molecular doping and gas sensing in Si nanowires: From charge injection to reduced dielectric mismatch
DOI:10.1063/1.4834576 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Amato, Giampiero;Cultrera, Alessandro;Boarino, Luca;Lamberti, Carlo;Bordiga, Silvia;Mercuri, Francesco;Cartoixa, Xavier;Rurali, Riccardo;
12:27:39 Chemically Doped Radial Junction Characteristics in Silicon Nanowires
DOI:10.1021/nl302906k JN:NANO LETTERS PY:2012
TC:2 AU: Ng, Man-Fai;Tong, Shi Wun;
12:27:40 Effects of graded distribution of scattering centers on ballistic transport
DOI:10.1063/1.4896836 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Mitran, T. L.;Nemnes, G. A.;Ion, L.;Dragoman, Daniela;
12:27:41 Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization
DOI:10.1103/PhysRevB.81.125202 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Boykin, Timothy B.;Luisier, Mathieu;Salmani-Jelodar, Mehdi;Klimeck, Gerhard;
12:27:42 Scattering cross section of metal catalyst atoms in silicon nanowires
DOI:10.1103/PhysRevB.81.125307 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Markussen, Troels;Rurali, Riccardo;Cartoixa, Xavier;Jauho, Antti-Pekka;Brandbyge, Mads;
12:27:43 Indirect measurement of thermal conductivity in silicon nanowires
DOI:10.1063/1.4866994 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Pennelli, Giovanni;Nannini, Andrea;Macucci, Massimo;
12:27:44 Multidimensional nanoscale materials from fused quantum dots
DOI:10.1103/PhysRevB.84.205326 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Tortajada, Luis;Besteiro, Lucas V.;Tiago, Murilo L.;Gallego, L. J.;Chelikowsky, James R.;Alemany, M. M. G.;
12:27:45 A modified cryostat for photo-electrical characterization of porous materials in controlled atmosphere at very low gas dosage
DOI:10.1063/1.4894074 JN:AIP ADVANCES PY:2014
TC:0 AU: Cultrera, Alessandro;Amato, Giampiero;Boarino, Luca;Lamberti, Carlo;
12:27:46 Contactless photoconductivity measurements on (Si) nanowires
DOI:10.1063/1.3280057 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Chepelianskii, A. D.;Chiodi, F.;Ferrier, M.;Gueron, S.;Rouviere, E.;Bouchiat, H.;
12:27:47 Capacitance of metallic and semiconducting nanowires examined by first-principles calculations
DOI:10.1103/PhysRevB.86.245414 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;
12:27:48 Structural and Chemical Properties of Gold Rare Earth Disilicide Core-Shell Nanowires
DOI:10.1021/nn102230j JN:ACS NANO PY:2011
TC:2 AU: Ouyang, Wenjie;Shinde, Aniketa;Zhang, Yanning;Cao, Juxian;Ragan, Regina;Wu, Ruqian;
12:27:49 Gate-Controlled Donor Activation in Silicon Nanowires
DOI:10.1021/nl1027292 JN:NANO LETTERS PY:2010
TC:5 AU: Yan, Binghai;Frauenheim, Thomas;Gali, Adam;
12:27:50 Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire
DOI:10.1021/n15024468 JN:NANO LETTERS PY:2014
TC:1 AU: Amit, Iddo;Englander, Danny;Horvitz, Dror;Sasson, Yaniv;Rosenwaks, Yossi;
12:28:1 Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes
DOI:10.1021/nn203653h JN:ACS NANO PY:2012
TC:36 AU: Paska, Yair;Stelzner, Thomas;Assad, Ossama;Tisch, Ulrike;Christiansen, Silke;Haick, Hossam;
12:28:2 Interactive Effect of Hysteresis and Surface Chemistry on Gated Silicon Nanowire Gas Sensors
DOI:10.1021/am300288z JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:46 AU: Paska, Yair;Haick, Hossam;
12:28:3 Enhanced Sensing of Nonpolar Volatile Organic Compounds by Silicon Nanowire Field Effect Transistors
DOI:10.1021/nn201184c JN:ACS NANO PY:2011
TC:52 AU: Paska, Yair;Stelzner, Thomas;Christiansen, Silke;Haick, Hossam;
12:28:4 Nanomaterials for cross-reactive sensor arrays
DOI:10.1557/mrs2010.509 JN:MRS BULLETIN PY:2010
TC:75 AU: Tisch, Ulrike;Haick, Hossam;
12:28:5 Effect of Functional Groups on the Sensing Properties of Silicon Nanowires toward Volatile Compounds
DOI:10.1021/am4004649 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Wang, Bin;Haick, Hossam;
12:28:6 Nanoarray of Polycyclic Aromatic Hydrocarbons and Carbon Nanotubes for Accurate and Predictive Detection in Real-World Environmental Humidity
DOI:10.1021/nn202314k JN:ACS NANO PY:2011
TC:41 AU: Zilberman, Yael;Ionescu, Radu;Feng, Xinliang;Muellen, Klaus;Haick, Hossam;
12:28:7 Carbon Nanotube/Hexa-peri-hexabenzocoronene Bilayers for Discrimination Between Nonpolar Volatile Organic Compounds of Cancer and Humid Atmospheres
DOI:10.1002/adma.201001275 JN:ADVANCED MATERIALS PY:2010
TC:48 AU: Zilberman, Yael;Tisch, Ulrike;Shuster, Gregory;Pisula, Wojciech;Feng, Xinliang;Muellen, Klaus;Hoick, Hossam;
12:28:8 Effect of Chain Length on the Sensing of Volatile Organic Compounds by means of Silicon Nanowires
DOI:10.1021/am401265z JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:15 AU: Wang, Bin;Haick, Hossam;
12:28:9 Spray-Coating Route for Highly Aligned and Large-Scale Arrays of Nanowires
DOI:10.1021/nn204513y JN:ACS NANO PY:2012
TC:18 AU: Assad, Ossama;Leshansky, Alexander M.;Wang, Bin;Stelzner, Thomas;Christiansen, Silke;Haick, Hossam;
12:28:10 Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires
DOI:10.1021/am300961d JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:9 AU: Wang, Bin;Stelzner, Thomas;Dirawi, Rawi;Assad, Ossama;Shehada, Nisreen;Christiansen, Silke;Haick, Hossam;
12:28:11 Discriminative Power of Chemically Sensitive Silicon Nanowire Field Effect Transistors to Volatile Organic Compounds
DOI:10.1021/am403421g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:11 AU: Ermanok, Rotem;Assad, Ossama;Zigelboim, Keren;Wang, Bin;Haick, Hossam;
12:28:12 Field Effect Transistors Based on Polycyclic Aromatic Hydrocarbons for the Detection and Classification of Volatile Organic Compounds
DOI:10.1021/am4005144 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:12 AU: Bayn, Alona;Feng, Xinliang;Muellen, Klaus;Haick, Hossam;
12:28:13 Synthesis of Nanograined ZnO Nanowires and Their Enhanced Gas Sensing Properties
DOI:10.1021/am300741r JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:50 AU: Park, Sunghoon;An, Soyeon;Ko, Hyunsung;Jin, Changhyun;Lee, Chongmu;
12:28:14 Catalyst-Free Functionalization for Versatile Modification of Nonoxidized Silicon Structures
DOI:10.1021/la2002546 JN:LANGMUIR PY:2011
TC:16 AU: Puniredd, Sreenivasa Reddy;Assad, Ossama;Stelzner, Thomas;Christiansen, Silke;Haick, Hossam;
12:28:15 Polycyclic Aromatic Hydrocarbon for the Detection of Nonpolar Analytes under Counteracting Humidity Conditions
DOI:10.1021/am3013328 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:13 AU: Bachar, Nadav;Mintz, Lena;Zilberman, Yael;Ionescu, Radu;Feng, Xinliang;Muellen, Klaus;Haick, Hossam;
12:28:16 Effect of Humidity on Nanoparticle-Based Chemiresistors: A Comparison between Synthetic and Real-World Samples
DOI:10.1021/am2013695 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:38 AU: Konvalina, Gady;Haick, Hossam;
12:28:17 Artificial Sensing Intelligence with Silicon Nanowires for Ultraselective Detection in the Gas Phase
DOI:10.1021/nl404335p JN:NANO LETTERS PY:2014
TC:22 AU: Wang, Bin;Cancilla, John C.;Torrecilla, Jose S.;Haick, Hossam;
12:28:18 Polyelectrolyte Interlayer for Ultra-Sensitive Organic Transistor Humidity Sensors
DOI:10.1021/am402050p JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:7 AU: Park, Yeong Don;Kang, Boseok;Lim, Ho Sun;Cho, Kilwon;Kang, Moon Sung;Cho, Jeong Ho;
12:28:19 Self-Assembled and Highly Selective Sensors Based on Air-Bridge-Structured Nanowire Junction Arrays
DOI:10.1021/am401635e JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Park, Won Jeong;Choi, Kyung Jin;Kim, Myung Hwa;Koo, Bon Hyeong;Lee, Jong-Lam;Baik, Jeong Mm;
12:28:20 Sensor Arrays Based on Polycyclic Aromatic Hydrocarbons: Chemiresistors versus Quartz-Crystal Microbalance
DOI:10.1021/am403067t JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Bachar, Nadav;Liberman, Lucy;Muallem, Fairouz;Feng, Xinliang;Muellen, Klaus;Haick, Hossam;
12:28:21 UV-Enhanced NO2 Gas Sensing Properties of SnO2-Core/ZnO-Shell Nanowires at Room Temperature
DOI:10.1021/am400500a JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:36 AU: Park, Sunghoon;An, Soyeon;Mun, Youngho;Lee, Chongmu;
12:28:22 Facile Method for Modification of the Silicon Nanowires and Its Application in Fabrication of pH-Sensitive Chips
DOI:10.1021/am302953f JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:2 AU: Miao, Rong;Mu, Lixuan;Zhang, Hongyan;Xu, Haitao;Zhou, Bingjiang;She, Guangwei;Wang, Pengfei;Shi, Wensheng;
12:28:23 DNA Gold Nanoparticle Nanocomposite Films for Chemiresistive Vapor Sensing
DOI:10.1021/la402626p JN:LANGMUIR PY:2013
TC:4 AU: Fu, Kan;Li, Shihui;Jiang, Xiaoqiang;Wang, Yong;Willis, Brian G.;
12:28:24 Self-controlled fabrication of single-crystalline silicon nanobeams using conventional micromachining
DOI:10.1088/0957-4484/25/31/315303 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Mehdizadeh, Emad;Rahafrooz, Amir;Pourkamali, Siavash;
12:28:25 Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures
DOI:10.1063/1.3665630 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Kornblum, Lior;Paska, Yair;Rothschild, Jonathan A.;Haick, Hossam;Eizenberg, Moshe;
12:28:26 Electrical performance of III-V gate-all-around nanowire transistors
DOI:10.1063/1.4817997 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Razavi, Pedram;Fagas, Giorgos;
12:28:27 Ultrasensitive Silicon Nanowire for Real-World Gas Sensing: Noninvasive Diagnosis of Cancer from Breath Volatolome
DOI:10.1021/nl504482t JN:NANO LETTERS PY:2015
TC:4 AU: Shehada, Nisreen;Broenstrup, Gerald;Funka, Konrads;Christiansen, Silke;Leja, Marcis;Haick, Hossam;
12:28:28 Control of field-effect transistor threshold voltages by insertion of self-assembled monolayers
DOI:10.1063/1.4775785 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Ojima, T.;Koto, M.;Itoh, M.;Imamura, T.;
12:28:29 Harnessing immunomagnetic separation and quantum dot-based quantification capacities for the enumeration of absolute levels of biomarker
DOI:10.1088/0957-4484/24/28/285103 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Park, Hoyoung;Hwang, Mintai P.;Lee, Jong-Wook;Choi, Jonghoon;Lee, Kwan Hyi;
12:28:30 Systematic Cross-Linking Changes within a Self-Assembled Monolayer in a Nanogap Junction: A Tool for Investigating the Intermolecular Electronic Coupling
DOI:10.1021/ja910126s JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:7 AU: Paska, Yair;Haick, Hossam;
12:28:31 Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer
DOI:10.1088/0957-4484/23/30/305701 JN:NANOTECHNOLOGY PY:2012
TC:0 AU: Liu, Donghua;Shi, Zhiwen;Zhang, Lianchang;He, Congli;Zhang, Jing;Cheng, Meng;Yang, Rong;Tian, Xuezeng;Bai, Xuedong;Shi, Dongxia;Zhang, Guangyu;
12:28:32 Molecular Sensing Using Monolayer Floating Gate, Fully Depleted SOI MOSFET Acting as an Exponential Transducer
DOI:10.1021/nn900901f JN:ACS NANO PY:2010
TC:10 AU: Takulapalli, Bharath R.;
12:28:33 Charge Transfer Doping of Silicon
DOI:10.1103/PhysRevLett.112.155502 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Rietwyk, K. J.;Smets, Y.;Bashouti, M.;Christiansen, S. H.;Schenk, A.;Tadich, A.;Edmonds, M. T.;Ristein, J.;Ley, L.;Pakes, C. I.;
12:28:34 Effects of Pt capping and annealing on the photoluminescence properties of ZnO nanorods
DOI:10.1016/j.matlet.2013.04.106 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Ko, Hyunsung;Park, Sunghoon;Mun, Youngho;Lee, Chongmu;
12:28:35 Photo-controlled redox of hydrogen-terminated silicon nanowire established by the reversible color alteration of methylene blue
DOI:10.1016/j.materresbull.2012.02.016 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:0 AU: Lian, Suoyuan;Tsang, Chi Him A.;Kang, Zhenhui;Liu, Yang;Wong, Ningbew;Lee, Shuit-Tong;
12:28:36 Silicon nanowires for high-specificity and high-selectivity sensors under low-frequency scanning
DOI:10.1063/1.3549067 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: He, Xiaodie;Guo, Chunsheng;Liu, Yang;Tsang, Chi Him A.;Ma, Dorothy Duo Duo;Zhang, Ruiqin;Wong, Ning-Bew;Kang, Zhenhui;Lee, Shuit-Tong;
12:28:37 Short Oligonucleotides Aligned in Stretched Humid Matrix: Secondary DNA Structure in Poly(vinyl alcohol) Environment
DOI:10.1021/la300960q JN:LANGMUIR PY:2012
TC:3 AU: Hanczyc, Piotr;Akerman, Bjorn;Norden, Bengt;
12:28:38 Hydrogen-terminated silicon nanowire photocatalysis: Benzene oxidation and methyl red decomposition
DOI:10.1016/j.materresbull.2011.08.027 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:5 AU: Lian, Suoyuan;Tsang, Chi Him A.;Kang, Zhenhui;Liu, Yang;Wong, Ningbew;Lee, Shuit-Tong;
12:29:1 Semiconductor Nanowire: What's Next?
DOI:10.1021/nl100665r JN:NANO LETTERS PY:2010
TC:376 AU: Yang, Peidong;Yan, Ruoxue;Fardy, Melissa;
12:29:2 Silicon Nanowires for Biosensing, Energy Storage, and Conversion
DOI:10.1002/adma.201301943 JN:ADVANCED MATERIALS PY:2013
TC:31 AU: Wang, Yanli;Wang, Tianyu;Da, Peimei;Xu, Ming;Wu, Hao;Zheng, Gengfeng;
12:29:3 Semiconductor nanowires: A platform for nanoscience and nanotechnology
DOI:10.1557/mrs.2011.269 JN:MRS BULLETIN PY:2011
TC:77 AU: Lieber, Charles M.;
12:29:4 Kinked p-n Junction Nanowire Probes for High Spatial Resolution Sensing and Intracellular Recording
DOI:10.1021/nl300256r JN:NANO LETTERS PY:2012
TC:49 AU: Jiang, Zhe;Qing, Quan;Xie, Ping;Gao, Ruixuan;Lieber, Charles M.;
12:29:5 Encoding Abrupt and Uniform Dopant Profiles in Vapor-Liquid-Solid Nanowires by Suppressing the Reservoir Effect of the Liquid Catalyst
DOI:10.1021/nn505404y JN:ACS NANO PY:2014
TC:2 AU: Christesen, Joseph D.;Pinion, Christopher W.;Zhang, Xing;McBride, James R.;Cahoon, James F.;
12:29:6 Synthetically Encoded Ultrashort-Channel Nanowire Transistors for Fast, Pointlike Cellular Signal Detection
DOI:10.1021/nl3011337 JN:NANO LETTERS PY:2012
TC:31 AU: Cohen-Karni, Tzahi;Casanova, Didier;Cahoon, James F.;Qing, Quan;Bell, David C.;Lieber, Charles M.;
12:29:7 Directed Branch Growth in Aligned Nanowire Arrays
DOI:10.1021/nl404377v JN:NANO LETTERS PY:2014
TC:3 AU: Beaudry, Allan L.;LaForge, Joshua M.;Tucker, Ryan T.;Sorge, Jason B.;Adamski, Nicholas L.;Li, Peng;Taschuk, Michael T.;Brett, Michael J.;
12:29:8 Fundamental Insights into Nanowire Diameter Modulation and the Liquid/Solid Interface
DOI:10.1021/nl3039019 JN:NANO LETTERS PY:2013
TC:12 AU: Crawford, Sam;Lim, Sung Keun;Gradecak, Silvija;
12:29:9 Identifying Crystallization- and Incorporation-Limited Regimes during Vapor-Liquid-Solid Growth of Si Nanowires
DOI:10.1021/nn501403v JN:ACS NANO PY:2014
TC:4 AU: Pinion, Christopher W.;Nenon, David P.;Christesen, Joseph D.;Cahoon, James F.;
12:29:10 Outside Looking In: Nanotube Transistor Intracellular Sensors
DOI:10.1021/nl301623p JN:NANO LETTERS PY:2012
TC:34 AU: Gao, Ruixuan;Strehle, Steffen;Tian, Bozhi;Cohen-Karni, Tzahi;Xie, Ping;Duan, Xiaojie;Qing, Quan;Lieber, Charles M.;
12:29:11 Synthetically Encoding 10 nm Morphology in Silicon Nanowires
DOI:10.1021/nl403909r JN:NANO LETTERS PY:2013
TC:7 AU: Christesen, Joseph D.;Pinion, Christopher W.;Grumstrup, Erik M.;Papanikolas, John M.;Cahoon, James F.;
12:29:12 Silicon Nanowire-Based Fluorescent Nanosensor for Complexed Cu2+ and its Bioapplications
DOI:10.1021/nl500276x JN:NANO LETTERS PY:2014
TC:6 AU: Miao, Rong;Mu, Lixuan;Zhang, Hongyan;She, Guangwei;Zhou, Bingjiang;Xu, Haitao;Wang, Pengfei;Shi, Wensheng;
12:29:13 Vertical and tilted Ag-NPs@ZnO nanorods by plasma-enhanced chemical vapour deposition
DOI:10.1088/0957-4484/23/25/255303 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Macias-Montero, Manuel;Borras, Ana;Saghi, Zineb;Espinos, Juan P.;Barranco, Angel;Cotrino, Jose;Gonzalez-Elipe, A. R.;
12:29:14 Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires
DOI:10.1063/1.4821996 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kolesnik-Gray, Maria M.;Lutz, Tarek;Collins, Gillian;Biswas, Subhajit;Holmes, Justin D.;Krstic, Vojislav;
12:29:15 Chemical Nano-Gardens: Growth of Salt Nanowires from Supramolecular Self-Assembly Gels
DOI:10.1021/nn305813y JN:ACS NANO PY:2013
TC:9 AU: Daly, Ronan;Kotova, Oxana;Boese, Markus;Gunnlaugsson, Thorfinnur;Boland, John J.;
12:29:16 Molecular dynamics simulations of gold-catalyzed growth of silicon bulk crystals and nanowires
DOI:10.1557/jmr.2011.155 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:6 AU: Ryu, Seunghwa;Cai, Wei;
12:29:17 Multiplexed Free-Standing Nanowire Transistor Bioprobe for Intracellular Recording: A General Fabrication Strategy
DOI:10.1021/nl5012855 JN:NANO LETTERS PY:2014
TC:2 AU: Xu, Lin;Jiang, Zhe;Mai, Liqiang;Qing, Quan;
12:29:18 Desorption induced formation of negative nanowires in GaN
DOI:10.1016/j.jaysgro.2011.03.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Kim, Bong-Joong;Stach, Eric A.;
12:29:19 In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4
DOI:10.1016/j.jcrysgro.2014.11.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Inasawa, Susumu;
12:29:20 Optimization of functionalization conditions for protein analysis by AFM
DOI:10.1016/j.apsosc.2014.08.201 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Arroyo-Hernandez, Maria;Daza, Rafael;Perez-Rigueiro, Jose;Elices, Manuel;Nieto-Marquez, Jorge;Guinea, Gustavo V.;
12:30:1 Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
DOI:10.1063/1.4790424 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:14 AU: Perillat-Merceroz, Guillaume;Cosendey, Gatien;Carlin, Jean-Francois;Butte, Raphael;Grandjean, Nicolas;
12:30:2 Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
DOI:10.1063/1.4703938 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Pandey, S.;Cavalcoli, D.;Fraboni, B.;Cavallini, A.;Brazzini, T.;Calle, F.;
12:30:3 Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.3368689 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Akazawa, M.;Matsuyama, T.;Hashizume, T.;Hiroki, M.;Yamahata, S.;Shigekawa, N.;
12:30:4 Indium segregation in AlInN/AlN/GaN heterostructures
DOI:10.1063/1.3489433 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Minj, A.;Cavalcoli, D.;Cavallini, A.;
12:30:5 Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
DOI:10.1063/1.3326079 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Chikhaoui, W.;Bluet, J. -M.;Poisson, M. -A.;Sarazin, N.;Dua, C.;Bru-Chevallier, C.;
12:30:6 High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1-xN/GaN heterostructures
DOI:10.1063/1.3525713 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Song, J.;Xu, F. J.;Yan, X. D.;Lin, F.;Huang, C. C.;You, L. P.;Yu, T. J.;Wang, X. Q.;Shen, B.;Wei, K.;Liu, X. Y.;
12:30:7 Mg doping for p-type AlInN lattice-matched to GaN
DOI:10.1063/1.4747524 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Taniyasu, Yoshitaka;Carlin, Jean-Francois;Castiglia, Antonino;Butte, Raphael;Grandjean, Nicolas;
12:30:8 Leakage mechanisms in InAlN based heterostructures
DOI:10.1063/1.4866328 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Lugani, L.;Py, M. A.;Carlin, J. -F.;Grandjean, N.;
12:30:9 Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
DOI:10.1016/j.jcrysgro.2012.05.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Vennegues, P.;Diaby, B. S.;Kim-Chauveau, H.;Bodiou, L.;Schenk, H. P. D.;Frayssinet, E.;Martin, R. W.;Watson, I. M.;
12:30:10 Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition
DOI:10.1063/1.3296127 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Brown, David F.;Keller, Stacia;Mates, Thomas E.;Speck, James S.;DenBaars, Steven P.;Mishra, Umesh K.;
12:30:11 Mobility-limiting mechanisms in polar semiconductor heterostructures
DOI:10.1016/j.actamat.2012.02.025 JN:ACTA MATERIALIA PY:2012
TC:6 AU: Pandey, Saurabh;Cavalcoli, Daniela;Minj, Albert;Fraboni, Beatrice;Cavallini, Anna;Skuridina, Daria;Vogt, Patrick;Kneissl, Michael;
12:30:12 Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.3527058 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:23 AU: Akazawa, M.;Gao, B.;Hashizume, T.;Hiroki, M.;Yamahata, S.;Shigekawa, N.;
12:30:13 The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
DOI:10.1016/j.jcrysgro.2010.12.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Kim-Chauveau, H.;de Mierry, P.;Chauveau, J-M;Duboz, J-Y;
12:30:14 Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity
DOI:10.1103/PhysRevB.83.195309 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Mouti, Anas;Rouviere, Jean-Luc;Cantoni, Marco;Carlin, Jean-Francois;Feltin, Eric;Grandjean, Nicolas;Stadelmann, Pierre;
12:30:15 Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN
DOI:10.1103/PhysRevB.90.115208 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Py, Marcel A.;Lugani, Lorenzo;Taniyasu, Yoshitaka;Carlin, Jean-Francois;Grandjean, Nicolas;
12:30:16 Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
DOI:10.1063/1.3442486 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Donoval, D.;Chvala, A.;Sramaty, R.;Kovac, J.;Carlin, J. -F.;Grandjean, N.;Pozzovivo, G.;Kuzmik, J.;Pogany, D.;Strasser, G.;Kordos, P.;
12:30:17 Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells
DOI:10.1063/1.3502483 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Zhou, Lin;McCartney, Martha R.;Smith, David J.;Mouti, Anas;Feltin, E.;Carlin, J. F.;Grandjean, N.;
12:30:18 Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
DOI:10.1063/1.4720087 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Romero, M. F.;Feneberg, M.;Moser, P.;Berger, C.;Blaesing, J.;Dadgar, A.;Krost, A.;Sakalauskas, E.;Goldhahn, R.;
12:30:19 Influence of the barrier composition in GaN/In chi Al1-chi N quantum wells properties
DOI:10.1016/j.jcrysgro.2013.12.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kriouche, N.;Watanabe, A.;Oda, O.;Egawa, T.;
12:30:20 Band gap shift in Al1-xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy
DOI:10.1063/1.3576938 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Cavalcoli, Daniela;Pandey, Saurabh;Fraboni, Beatrice;Cavallini, Anna;
12:30:21 Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
DOI:10.1063/1.4773244 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Ganguly, Satyaki;Konar, Aniruddha;Hu, Zongyang;Xing, Huili;Jena, Debdeep;
12:30:22 Optical and structural characterization of AlInN layers for optoelectronic applications
DOI:10.1063/1.3467964 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Aschenbrenner, T.;Dartsch, H.;Kruse, C.;Anastasescu, M.;Stoica, M.;Gartner, M.;Pretorius, A.;Rosenauer, A.;Wagner, Thomas;Hommel, D.;
12:30:23 Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy
DOI:10.1063/1.4771676 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Pandey, S.;Cavalcoli, D.;Minj, A.;Fraboni, B.;Cavallini, A.;Gamarra, P.;Poisson, M. A.;
12:30:24 Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
DOI:10.1063/1.3608162 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Pandey, S.;Fraboni, B.;Cavalcoli, D.;Minj, A.;Cavallini, A.;
12:30:25 Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
DOI:10.1063/1.3679703 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Abid, M.;Moudakir, T.;Orsal, G.;Gautier, S.;Naciri, A. En;Djebbour, Z.;Ryou, J. -H.;Patriarche, G.;Largeau, L.;Kim, H. J.;Lochner, Z.;Pantzas, K.;Alamarguy, D.;Jomard, F.;Dupuis, R. D.;Salvestrini, J. -P.;Voss, P. L.;Ougazzaden, A.;
12:30:26 Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys
DOI:10.1063/1.4872317 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Schulz, S.;Caro, M. A.;O'Reilly, E. P.;
12:30:27 Lattice-matched AlInN in the initial stage of growth
DOI:10.1063/1.4872226 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Buss, E. R.;Rossow, U.;Bremers, H.;Hangleiter, A.;
12:30:28 Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures
DOI:10.1063/1.4901906 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nsele, S. D.;Escotte, L.;Tartarin, J. -G.;Piotrowicz, S.;Delage, S. L.;
12:30:29 Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer
DOI:10.1063/1.3651393 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Zhang, Yun-Yan;Yao, Guang-Rui;
12:30:30 A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN
DOI:10.1063/1.4807914 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Shishehchi, Sara;Bertazzi, Francesco;Bellotti, Enrico;
12:30:31 Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures
DOI:10.1088/0957-4484/23/11/115701 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Minj, A.;Cavalcoli, D.;Cavallini, A.;
12:30:32 Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
DOI:10.1063/1.4754141 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Akazawa, M.;Nakano, T.;
12:30:33 Band alignment of HfO2/In0.18Al0.82N determined by angle-resolved x-ray photoelectron spectroscopy
DOI:10.1063/1.4891195 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Owen, Man Hon Samuel;Bhuiyan, Maruf Amin;Zhang, Zheng;Pan, Ji Sheng;Tok, Eng Soon;Yeo, Yee-Chia;
12:30:34 Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
DOI:10.1063/1.3560919 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Donoval, D.;Chvala, A.;Sramaty, R.;Kovac, J.;Morvan, E.;Dua, Ch.;DiForte-Poisson, M. A.;Kordos, P.;
12:30:35 The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
DOI:10.1016/j.jcrysgro.2010.10.108 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Sadler, Thomas C.;Kappers, Menno J.;Oliver, Rachel A.;
12:30:36 Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
DOI:10.1016/j.jcrysgro.2011.10.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Kim-Chauveau, H.;Frayssinet, E.;Damilano, B.;De Mierry, P.;Bodiou, L.;Nguyen, L.;Vennegues, P.;Chauveau, J. -M.;Cordier, Y.;Duboz, J. Y.;Charash, R.;Vajpeyi, A.;Lamy, J. -M.;Akhter, M.;Maaskant, P. P.;Corbett, B.;Hangleiter, A.;Wieck, A.;
12:30:37 Nanocrack-induced leakage current in AlInN/AlN/GaN
DOI:10.1016/j.scriptamat.2011.11.024 JN:SCRIPTA MATERIALIA PY:2012
TC:4 AU: Minj, Albert;Cavalcoli, Daniela;Pandey, Saurabh;Fraboni, Beatrice;Cavallini, Anna;Brazzini, Tommaso;Calle, Fernando;
12:30:38 Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
DOI:10.1063/1.3430737 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Chen, Z. T.;Sakai, Y.;Egawa, T.;
12:30:39 Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
DOI:10.1063/1.3589974 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Charash, R.;Kim-Chauveau, H.;Lamy, J-M.;Akther, M.;Maaskant, P. P.;Frayssinet, E.;de Mierry, P.;Draeger, A. D.;Duboz, J-Y.;Hangleiter, A.;Corbett, B.;
12:30:40 Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
DOI:10.1063/1.3305397 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Miao, Z. L.;Yu, T. J.;Xu, F. J.;Song, J.;Lu, L.;Huang, C. C.;Yang, Z. J.;Wang, X. Q.;Zhang, G. Y.;Zhang, X. P.;Yu, D. P.;Shen, B.;
12:30:41 Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
DOI:10.1063/1.3693039 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Chen, Z. T.;Fujita, K.;Ichikawa, J.;Egawa, T.;
12:30:42 Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
DOI:10.1063/1.3514241 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Krost, A.;Berger, C.;Blaesing, J.;Franke, A.;Hempel, T.;Dadgar, A.;Christen, J.;
12:30:43 Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN
DOI:10.1063/1.4810960 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Akazawa, Masamichi;Chiba, Masahito;Nakano, Takuma;
12:30:44 Intentional anisotropic strain relaxation in (11(2)over-bar2) oriented Al1-xInxN one-dimensionally lattice matched to GaN
DOI:10.1063/1.4895938 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Buss, E. R.;Rossow, U.;Bremers, H.;Meisch, T.;Caliebe, M.;Scholz, F.;Hangleiter, A.;
12:30:45 Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy
DOI:10.1063/1.3415527 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Tang, H.;Fang, Z. Q.;Rolfe, S.;Bardwell, J. A.;Raymond, S.;
12:30:46 Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes
DOI:10.1063/1.3662488 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Sakai, Y.;Khai, P. C.;Egawa, T.;
12:30:47 Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis
DOI:10.1088/0957-4484/24/14/145701 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Minj, Albert;Cavalcoli, Daniela;Cavallini, Anna;Gamarra, Piero;Poisson, Marie-Antoinette di Forte;
12:30:48 Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality
DOI:10.1063/1.3489108 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Castiglia, A.;Carlin, J. -F.;Feltin, E.;Cosendey, G.;Dorsaz, J.;Grandjean, N.;
12:30:49 Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy (vol 95, 071905, 2009)
DOI:10.1063/1.3623430 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Kehagias, Th.;Dimitrakopulos, G. P.;Kioseoglou, J.;Kirmse, H.;Giesen, C.;Heuken, M.;Georgakilas, A.;Neumann, W.;Karakostas, Th.;Komninou, Ph.;
12:30:50 Measurement of polarization-induced electric fields in GaN/AlInN quantum wells
DOI:10.1063/1.4772633 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Zhou, Lin;Gonschorek, Marcus;Giraud, Etienne;Feltin, E.;Carlin, J. F.;Grandjean, Nicolas;Smith, David J.;McCartney, Martha R.;
12:30:51 AlInN MOVPE: growth chemistry and analysis of trends
DOI:10.1016/j.jcrysgro.2011.11.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Lobanova, A. V.;Segal, A. S.;Yakovlev, E. V.;Talalaev, R. A.;
12:30:52 Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors
DOI:10.1063/1.4811828 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Zhang, Lili;Dong, Kexiu;Chen, Dunjun;Liu, Yanli;Xue, Junjun;Lu, Hai;Zhang, Rong;Zheng, Youdou;
12:30:53 Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures
DOI:10.1063/1.4895807 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lugani, L.;Carlin, J-F;Py, M. A.;Grandjean, N.;
12:30:54 Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode
DOI:10.1063/1.4737258 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Kumar, Ashutosh;Asokan, K.;Kumar, V.;Singh, R.;
12:30:55 A numerical study of carrier impact ionization in AlxGa1-xN
DOI:10.1063/1.4719967 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Bellotti, Enrico;Bertazzi, Francesco;
12:30:56 Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors
DOI:10.1063/1.4897397 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Balliou, A.;Douvas, A. M.;Normand, P.;Tsikritzis, D.;Kennou, S.;Argitis, P.;Glezos, N.;
12:30:57 The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy
DOI:10.1016/j.jcrysgro.2011.06.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Sadler, Thomas C.;Kappers, Menno J.;Oliver, Rachel A.;
12:30:58 Measurement of electric field across individual wurtzite GaN quantum dots using electron holography
DOI:10.1063/1.3636109 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Zhou, Lin;Smith, David J.;McCartney, Martha R.;Xu, Tao;Moustakas, Theodore D.;
12:30:59 Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures (vol 100, 152116, 2012)
DOI:10.1063/1.4720077 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Pandey, S.;Cavalcoli, D.;Fraboni, B.;Cavallini, A.;Brazzini, T.;Calle, F.;
12:30:60 Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer (vol 110, 093104, 2011)
DOI:10.1063/1.4742308 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Zhang, Yun-Yan;Yao, Guang-Rui;
12:30:61 Magnetic field effects on the linear and nonlinear optical properties of coaxial cylindrical quantum well wires
DOI:10.1063/1.3694779 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Karimi, M. J.;Rezaei, G.;
12:30:62 A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
DOI:10.1063/1.4817028 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Kodama, Kazuki;Tokuda, Hirokuni;Kuzuhara, Masaaki;
12:31:1 Screw Dislocation-Driven Epitaxial Solution Growth of ZnO Nanowires Seeded by Dislocations in GaN Substrates
DOI:10.1021/nl1015409 JN:NANO LETTERS PY:2010
TC:76 AU: Morin, Stephen A.;Jin, Song;
12:31:2 Screw Dislocation-Driven Growth of Two-Dimensional Nanoplates
DOI:10.1021/nl202689m JN:NANO LETTERS PY:2011
TC:46 AU: Morin, Stephen A.;Forticaux, Audrey;Bierman, Matthew J.;Jin, Song;
12:31:3 Three-Dimensional Mesoscale Heterostructures of ZnO Nanowire Arrays Epitaxially Grown on CuGaO2 Nanoplates as Individual Diodes
DOI:10.1021/nn4037078 JN:ACS NANO PY:2013
TC:4 AU: Forticaux, Audrey;Hacialioglu, Salih;DeGrave, John P.;Dziedzic, Rafal;Jin, Song;
12:31:4 The Solution Growth of Copper Nanowires and Nanotubes is Driven by Screw Dislocations
DOI:10.1021/nl203385u JN:NANO LETTERS PY:2012
TC:44 AU: Meng, Fel;Jin, Song;
12:31:5 Rational Solution Growth of alpha-FeOOH Nanowires Driven by Screw Dislocations and Their Conversion to alpha-Fe2O3 Nanowires
DOI:10.1021/ja200841e JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:49 AU: Meng, Fei;Morin, Stephen A.;Jin, Song;
12:31:6 Dislocation-Driven CdS and CdSe Nanowire Growth
DOI:10.1021/nn301194v JN:ACS NANO PY:2012
TC:21 AU: Wu, Haoyu;Meng, Fei;Li, Linsen;Jin, Song;Zheng, Gengfeng;
12:31:7 Hanoi Tower-like Multi layered Ultrathin Palladium Nanosheets
DOI:10.1021/nl503879a JN:NANO LETTERS PY:2014
TC:3 AU: Yin, Xi;Liu, Xinhong;Pan, Yung-Tin;Walsh, Kathleen A.;Yang, Hong;
12:31:8 Formation of Stacking Faults and the Screw Dislocation-Driven Growth: A Case Study of Aluminum Nitride Nanowires
DOI:10.1021/nn4052293 JN:ACS NANO PY:2013
TC:7 AU: Meng, Fei;Estruga, Marc;Forticaux, Audrey;Morin, Stephen A.;Wu, Qiang;Hu, Zheng;Jin, Song;
12:31:9 Helical BN and ZnO nanotubes with intrinsic twisting: An objective molecular dynamics study
DOI:10.1103/PhysRevB.84.115431 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Zhang, D-B.;Akatyeva, E.;Dumitrica, T.;
12:31:10 Critical Role of Screw Dislocation in the Growth of Co(OH)(2) Nanowires as Intermediates for Co3O4 Nanowire Growth
DOI:10.1021/cm101546t JN:CHEMISTRY OF MATERIALS PY:2010
TC:30 AU: Li, Yanguang;Wu, Yiying;
12:31:11 Controlled Synthesis of Layered Double Hydroxide Nanoplates Driven by Screw Dislocations
DOI:10.1021/acs.nanolett.5b00758 JN:NANO LETTERS PY:2015
TC:0 AU: Forticaux, Audrey;Dang, Lianna;Liang, Hanfeng;Jin, Song;
12:31:12 Thermal Transport Along the Dislocation Line in Silicon Carbide
DOI:10.1103/PhysRevLett.113.124301 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Ni, Yuxiang;Xiong, Shiyun;Volz, Sebastian;Dumitrica, Traian;
12:31:13 Substrate-Free Self-Assembly Approach toward Large-Area Nanomembranes
DOI:10.1021/nn2050906 JN:ACS NANO PY:2012
TC:18 AU: Wang, Fei;Seo, Jung-Hun;Ma, Zhenqiang;Wang, Xudong;
12:31:14 New insights into the growth mechanism of hierarchical architectures of PbTe synthesized through a triethanolamine-assisted solvothermal method and their shape-dependent electrical transport properties
DOI:10.1039/c3ta13783j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:4 AU: Wang, Qun;Chen, Gang;Yin, Hang;
12:31:15 Electrically Active Screw Dislocations in Helical ZnO and Si Nanowires and Nanotubes
DOI:10.1021/nn303747c JN:ACS NANO PY:2012
TC:8 AU: Akatyeva, Evgeniya;Kou, Liangzhi;Nikiforov, Ilia;Frauenheim, Thomas;Dumitrica, Traian;
12:31:16 Two-Dimensional Nanomembranes: Can They Outperform Lower Dimensional Nanocrystals?
DOI:10.1021/nn300893x JN:ACS NANO PY:2012
TC:13 AU: Nikoobakht, Babak;Li, Xiuling;
12:31:17 Thermally-Active Screw Dislocations in Si Nanowires and Nanotubes
DOI:10.1002/smll.201302966 JN:SMALL PY:2014
TC:5 AU: Xiong, Shiyun;Ma, Jihong;Volz, Sebastian;Dumitrica, Traian;
12:31:18 Spontaneous Phase Transformation and Exfoliation of Rectangular Single-Crystal Zinc Hydroxy Dodecylsulfate Nanomembranes
DOI:10.1021/nn4017108 JN:ACS NANO PY:2013
TC:5 AU: Wang, Fei;Jakes, Joseph E.;Geng, Dalong;Wang, Xudong;
12:31:19 The preparation of spiral ZnO nanostructures by top-down wet-chemical etching and their related properties
DOI:10.1039/c2jm30843f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Han, Xiguang;Zhou, Xi;Jiang, Yaqi;Xie, Zhaoxiong;
12:31:20 Eshelby Twist and Magic Helical Zinc Oxide Nanowires and Nanotubes
DOI:10.1103/PhysRevLett.109.035501 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:7 AU: Akatyeva, E.;Dumitrica, T.;
12:31:21 Fe solubility, growth mechanism, and luminescence of Fe doped ZnO nanowires and nanorods grown by evaporation-deposition
DOI:10.1063/1.3609073 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Aleman, Belen;Ortega, Yanicet;Angel Garcia, Jose;Fernandez, Paloma;Piqueras, Javier;
12:31:22 Enhanced Eshelby Twist on Thin Wurtzite InP Nanowires and Measurement of Local Crystal Rotation
DOI:10.1103/PhysRevLett.107.195503 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:9 AU: Tizei, L. H. G.;Craven, A. J.;Zagonel, L. F.;Tence, M.;Stephan, O.;Chiaramonte, T.;Cotta, M. A.;Ugarte, D.;
12:31:23 Large-scale solution synthesis of alpha-AlF3 center dot 3H(2)O nanorods under low supersaturation conditions and their conversion to porous beta-AlF3 nanorods
DOI:10.1039/c2jm33782g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:1 AU: Estruga, Marc;Meng, Fei;Li, Linsen;Chen, Lianyi;Li, Xiaochun;Jin, Song;
12:31:24 Electrostatic Self-Assembling Formation of Pd Superlattice Nanowires from Surfactant-Free Ultrathin Pd Nanosheets
DOI:10.1021/ja507409p JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:2 AU: Hu, Chengyi;Lin, Kaiqiang;Wang, Xingli;Liu, Shengjie;Yi, Jun;Tian, Yu;Wu, Binghui;Chen, Guangxu;Yang, Huayan;Dai, Yan;Li, Huan;Zheng, Nanfeng;
12:31:25 Two-dimensional Zn (k) In2O (k+3) nanostructures: synthesis, growth mechanism, self-assembly, and luminescence
DOI:10.1007/s11051-013-2015-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Bartolome, Javier;Maestre, David;Amati, Matteo;Cremades, Ana;Piqueras, Javier;
12:31:26 Correlation between ZnO nanorod growth and the dislocations in AlN-based substrates
DOI:10.1016/j.apsusc.2012.12.060 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Fu, Qiu-Ming;Wu, Jian-Peng;Ma, Zhi-Bin;Han, Yi-Bo;Tu, Ya-Fang;
12:31:27 Synthesis of Co3O4 nanoparticles via the CTAB-assisted method
DOI:10.1016/j.matlet.2010.09.090 JN:MATERIALS LETTERS PY:2011
TC:12 AU: Wang, Yan;Shi, Jian-Chao;Cao, Jian-Liang;Sun, Guang;Zhang, Zhan-Ying;
12:31:28 Au/SiOx composite thin film as catalyst for solvent-free hydrocarbon oxidation
DOI:10.1016/j.materresbull.2013.05.117 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Han, Xiao;Huang, Hui;Zhang, Hengchao;Zhang, Xing;Li, Haitao;Liu, Ruihua;Liu, Yang;Kang, Zhenhui;
12:31:29 Potential of C-doped boron nitride fullerene as a catalyst for methanol dehydrogenation
DOI:10.1016/j.commatsci.2014.05.043 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:5 AU: Esrafili, Mehdi D.;Nurazar, Roghaye;
12:31:30 Structure and wettability control of Cu-Ni-P alloy synthesized by electroless deposition
DOI:10.1016/j.jallcom.2012.05.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Zhang, Wenjing;Cao, Haiyong;Feng, Xue;Hu, Anmin;Li, Ming;
12:31:31 CTAB-assisted synthesis of mesoporous CoFe2O4 with high carbon monoxide oxidation activity
DOI:10.1016/j.matlet.2013.05.054 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Cao, Jian-Liang;Yan, Zhao-Li;Wang, Yan;Sun, Guang;Wang, Xiao-Dong;Bala, Hari;Zhang, Zhan-Ying;
12:31:32 Hydrothermal synthesis of Co3O4 nanorods on nickel foil
DOI:10.1016/j.matlet.2014.02.111 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Dong, Chengjun;Xiao, Xuechun;Chen, Gang;Guan, Hongtao;Wang, Yude;
12:31:33 In Situ Study of Noncatalytic Metal Oxide Nanowire Growth
DOI:10.1021/n150268751 JN:NANO LETTERS PY:2014
TC:3 AU: Rackauskas, Simas;Jiang, Hua;Wagner, Jakob B.;Shandakov, Sergey D.;Hansen, Thomas W.;Kauppinen, Esko I.;Nasibulin, Albert G.;
12:31:34 Metal free hydrogenation reaction on carbon doped boron nitride fullerene: A DFT study on the kinetic issue
DOI:10.1016/j.ijhydene.2012.07.081 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:13 AU: Wu, Hongyu;Fan, Xiaofeng;Kuo, Jer-Lai;
12:31:35 Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers
DOI:10.1016/j.matlet.2012.05.119 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Xie, Yong;Jie, Wanqi;Reiser, Anton;Feneberg, Martin;Tischer, Ingo;Wiedenmann, Michael;Madel, Manfred;Frey, Reinhard;Roeder, Uwe;Thonke, Klaus;
12:32:1 Band bowing and band alignment in InGaN alloys
DOI:10.1063/1.3291055 JN:APPLIED PHYSICS LETTERS PY:2010
TC:99 AU: Moses, Poul Georg;Van de Walle, Chris G.;
12:32:2 Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy
DOI:10.1021/nl2006802 JN:NANO LETTERS PY:2011
TC:104 AU: Wang, Defa;Pierre, Adrien;Kibria, Md Golam;Cui, Kai;Han, Xueguang;Bevan, Kirk H.;Guo, Hong;Paradis, Suzanne;Hakima, Abou-Rachid;Mi, Zetian;
12:32:3 Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties
DOI:10.1021/nl3001138 JN:NANO LETTERS PY:2012
TC:86 AU: Hwang, Yun Jeong;Wu, Cheng Hao;Hahn, Chris;Jeong, Hoon Eui;Yang, Peidong;
12:32:4 Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells
DOI:10.1063/1.3304786 JN:APPLIED PHYSICS LETTERS PY:2010
TC:47 AU: Aryal, K.;Pantha, B. N.;Li, J.;Lin, J. Y.;Jiang, H. X.;
12:32:5 Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode
DOI:10.1021/nl402156e JN:NANO LETTERS PY:2013
TC:25 AU: AlOtaibi, B.;Nguyen, H. P. T.;Zhao, S.;Kibria, M. G.;Fan, S.;Mi, Z.;
12:32:6 High Efficiency Solar-to-Hydrogen Conversion on a Monolithically Integrated InGaN/GaN/Si Adaptive Tunnel Junction Photocathode
DOI:10.1021/acs.nanolett.5b00535 JN:NANO LETTERS PY:2015
TC:1 AU: Fan, Shizhao;AlOtaibi, Bandar;Woo, Steffi Y.;Wang, Yongjie;Botton, Gianluigi A.;Mi, Zetian;
12:32:7 One-Step Overall Water Splitting under Visible Light Using Multiband InGaN/GaN Nanowire Heterostructures
DOI:10.1021/nn4028823 JN:ACS NANO PY:2013
TC:29 AU: Kibria, Md G.;Nguyen, Hieu P. T.;Cui, Kai;Zhao, Songrui;Liu, Dongping;Guo, Hong;Trudeau, Michel L.;Paradis, Suzanne;Hakima, Abou-Rachid;Mi, Zetian;
12:32:8 High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode
DOI:10.1088/0957-4484/24/17/175401 JN:NANOTECHNOLOGY PY:2013
TC:12 AU: AlOtaibi, B.;Harati, M.;Fan, S.;Zhao, S.;Nguyen, H. P. T.;Kibria, M. G.;Mi, Z.;
12:32:9 Photoelectrochemical Hydrogen Production on InP Nanowire Arrays with Molybdenum Sulfide Electrocatalysts
DOI:10.1021/nl404540f JN:NANO LETTERS PY:2014
TC:13 AU: Gao, Lu;Cui, Yingchao;Wang, Jia;Cavalli, Alessandro;Standing, Anthony;Vu, Thuy T. T.;Verheijen, Marcel A.;Haverkort, Jos E. M.;Bakkers, Erik P. A. M.;Notten, Peter H. L.;
12:32:10 Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
DOI:10.1063/1.4881324 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Alvi, N. H.;Soto Rodriguez, P. E. D.;Kumar, Praveen;Gomez, V. J.;Aseev, P.;Alvi, A. H.;Alvi, M. A.;Willander, M.;Noetzel, R.;
12:32:11 Band Engineered Epitaxial 3D GaN-InGaN Core-Shell Rod Arrays as an Advanced Photoanode for Visible-Light-Driven Water Splitting
DOI:10.1021/am4058937 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Caccamo, Lorenzo;Hartmann, Jana;Fabrega, Cristian;Estrade, Sonia;Lilienkamp, Gerhard;Prades, Joan Daniel;Hoffmann, Martin W. G.;Ledig, Johannes;Wagner, Alexander;Wang, Xue;Lopez-Conesa, Lluis;Peiro, Francesca;Rebled, Jose Manuel;Wehmann, Hergo-Heinrich;Daum, Winfried;Shen, Hao;Waag, Andreas;
12:32:12 Electrochemical properties of GaN nanowire electrodes-influence of doping and control by external bias
DOI:10.1088/0957-4484/23/16/165701 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Wallys, J.;Hoffmann, S.;Furtmayr, F.;Teubert, J.;Eickhoff, M.;
12:32:13 Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
DOI:10.1088/0957-4484/24/5/055401 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Hwang, Jih-Shang;Liu, Tai-Yan;Chattopadhyay, Surjit;Hsu, Geng-Ming;Basilio, Antonio M.;Chen, Han-Wei;Hsu, Yu-Kuei;Tu, Wen-Hsun;Lin, Yan-Gu;Chen, Kuei-Hsien;Li, Chien-Cheng;Wang, Sheng-Bo;Chen, Hsin-Yi;Chen, Li-Chyong;
12:32:14 Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation
DOI:10.1063/1.4823550 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Benton, J.;Bai, J.;Wang, T.;
12:32:15 Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure
DOI:10.1063/1.4803926 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Benton, J.;Bai, J.;Wang, T.;
12:32:16 Evolution of GaN nanowire morphology during catalyst-induced growth process
DOI:10.1039/c3tc31494d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Sahoo, Prasana;Dhara, Sandip;Amirthapandian, S.;Kamruddin, M.;
12:32:17 Microplasma-based synthesis of vertically aligned metal oxide nanostructures
DOI:10.1088/0957-4484/23/42/425603 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Koh, Travis L.;O'Hara, Evan C.;Gordon, Michael J.;
12:32:18 Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
DOI:10.1063/1.4903246 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Benton, J.;Bai, J.;Wang, T.;
12:32:19 InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface
DOI:10.1063/1.4818624 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Teubert, J.;Koslowski, S.;Lippert, S.;Schaefer, M.;Wallys, J.;Dimitrakopulos, G.;Kehagias, Th;Komninou, Ph;Das, A.;Monroy, E.;Eickhoff, M.;
12:32:20 InxGa1 _N-x performance as a band-gap-tunable photo-electrode in acidic and basic solutions
DOI:10.1016/j.solmat.2014.06.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Juodkazyte, Jurga;Sebeka, Benjaminas;Sayickaja, Irena;Kadys, Arunas;Jelmakas, Edgaras;Grinys, Tomas;Juodkazis, Saulius;Juodkazis, Kestutis;Malinauskas, Tadas;
12:32:21 Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy
DOI:10.1063/1.4799658 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Pandey, S.;Cavalcoli, D.;Cavallini, A.;
12:32:22 Spontaneous formation of InGaN nanowall network directly on Si
DOI:10.1063/1.4803017 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Soto Rodriguez, P. E. D.;Kumar, Praveen;Gomez, V. J.;Alvi, N. H.;Manuel, J. M.;Morales, F. M.;Jimenez, J. J.;Garcia, R.;Calleja, E.;Noetzel, R.;
12:32:23 Effect of different electrolytes on porous GaN using photo-electrochemical etching
DOI:10.1016/j.apsusc.2011.02.031 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Al-Heuseen, K.;Hashim, M. R.;Ali, N. K.;
12:32:24 Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices
DOI:10.1016/j.jcrysgro.2010.11.064 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Novikov, S. V.;Staddon, C. R.;Foxon, C. T.;Yu, K. M.;Broesler, R.;Hawkridge, M.;Liliental-Weber, Z.;Denlinger, J.;Demchenko, I.;Luckert, F.;Edwards, P. R.;Martin, R. W.;Walukiewicz, W.;
12:32:25 Effects of Ag nanoparticles on morphology and photocatalytic activities of GaN microrods arrays
DOI:10.1016/j.matlet.2014.07.065 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Liu, Hai Rui;Wei, Yan Jie;Hu, Yan Chun;Jia, Wei;Ma, Heng;Jia, Hu Sheng;
12:32:26 Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment
DOI:10.1063/1.3640223 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Li, Mingxue;Luo, Wenjun;Liu, Bin;Zhao, Xin;Li, Zhaosheng;Chen, Dunjun;Yu, Tao;Xie, Zili;Zhang, Rong;Zou, Zhigang;
12:32:27 Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x similar to 0.3) grown on GaN/alpha-Al2O3(0001) template
DOI:10.1063/1.4819075 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yamamoto, Akio;Mihara, Akihiro;Shigekawa, Naoteru;Narita, Norihiko;
12:32:28 Near-infrared InN quantum dots on high-In composition InGaN
DOI:10.1063/1.4800779 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Soto Rodriguez, Paul E. D.;Gomez, Victor J.;Kumar, Praveen;Calleja, Enrique;Noetzel, Richard;
12:32:29 Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy
DOI:10.1021/ja404043k JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:3 AU: Kamimura, Jumpei;Bogdanoff, Peter;Laehnemann, Jonas;Hauswald, Christian;Geelhaar, Lutz;Fiechter, Sebastian;Riechert, Henning;
12:32:30 Photoinduced Conversion of Methane into Benzene over GaN Nanowires
DOI:10.1021/ja5004119 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:3 AU: Li, Lu;Fan, Shizhao;Mu, Xiaoyue;Mi, Zetian;Li, Chao-Jun;
12:32:31 GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
DOI:10.1016/j.matlet.2010.03.053 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Sofikiti, N.;Chaniotakis, N.;Grandal, J.;Utrera, M.;Sanchez-Garcia, M. A.;Calleja, E.;
12:32:32 Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer
DOI:10.1088/0957-4484/24/32/325701 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Philipps, J. M.;Muentze, G. M.;Hille, P.;Wallys, J.;Schoermann, J.;Teubert, J.;Hofmann, D. M.;Eickhoff, M.;
12:32:33 Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis
DOI:10.1063/1.4871105 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Dahal, R.;Pantha, B. N.;Li, J.;Lin, J. Y.;Jiang, H. X.;
12:32:34 Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst
DOI:10.1016/j.actamat.2014.07.032 JN:ACTA MATERIALIA PY:2014
TC:0 AU: Kang, Jin-Ho;Kim, Soo Hee;Ebaid, Mohamed;Lee, June Key;Ryu, Sang-Wan;
12:32:35 Improved efficiency and stability of GaN photoanode in photoelectrochemical water splitting by NiO cocatalyst
DOI:10.1016/j.apsusc.2014.03.151 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Kim, Soo Hee;Ebaid, Mohamed;Kang, Jin-Ho;Ryu, Sang-Wan;
12:32:36 Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy
DOI:10.1063/1.4710994 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Najar, Adel;Gerland, Michel;Jouiad, Mustapha;
12:32:37 Spray deposition of nanostructured metal films using hydrodynamically stabilized, high pressure microplasmas
DOI:10.1116/1.4825129 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Koh, Travis L.;Gordon, Michael J.;
12:33:1 Polarity-Driven Polytypic Branching in Cu-Based Quaternary Chalcogenide Nanostructures
DOI:10.1021/nn405747h JN:ACS NANO PY:2014
TC:11 AU: Zamani, Reza R.;Ibanez, Maria;Luysberg, Martina;Garcia-Castello, Nuria;Houben, Lothar;Daniel Prades, Joan;Grillo, Vincenzo;Dunin-Borkowski, Rafal E.;Ramon Morante, Joan;Cabot, Andreu;Arbiol, Jordi;
12:33:2 Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy
DOI:10.1021/nl1034495 JN:NANO LETTERS PY:2011
TC:42 AU: Utama, Muhammad Iqbal Bakti;Peng, Zeping;Chen, Rui;Peng, Bo;Xu, Xinlong;Dong, Yajie;Wong, Lai Mun;Wang, Shijie;Sun, Handong;Xiong, Qihua;
12:33:3 Dynamics of Bound Exciton Complexes in CdS Nanobelts
DOI:10.1021/nn2008832 JN:ACS NANO PY:2011
TC:54 AU: Xu, Xinlong;Zhao, Yanyuan;Sie, Edbert Jarvis;Lu, Yunhao;Liu, Bo;Ekahana, Sandy Adhitia;Ju, Xiao;Jiang, Qike;Wang, Jianbo;Sun, Handong;Sum, Tze Chien;Huan, Cheng Hon Alfred;Feng, Yuan Ping;Xiong, Qihua;
12:33:4 Epitaxial II-VI Tripod Nanocrystals: A Generalization of van der Waals Epitaxy for Nonplanar Polytypic Nanoarchitectures
DOI:10.1021/nn204344z JN:ACS NANO PY:2012
TC:27 AU: Utama, Muhammad Iqbal Bakti;Zhang, Qing;Jia, Shuangfeng;Li, Dehui;Wang, Jianbo;Xiong, Qihua;
12:33:5 Excitonic Properties and Near-Infrared Coherent Random Lasing in Vertically Aligned CdSe Nanowires
DOI:10.1002/adma.201003820 JN:ADVANCED MATERIALS PY:2011
TC:33 AU: Chen, Rui;Utama, Muhammad Iqbal Bakti;Peng, Zeping;Peng, Bo;Xiong, Qihua;Sun, Handong;
12:33:6 Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates
DOI:10.1021/nl300554t JN:NANO LETTERS PY:2012
TC:31 AU: Utama, Muhammad Iqbal Bakti;Belarre, Francisco J.;Magen, Cesar;Peng, Bo;Arbiol, Jordi;Xiong, Qihua;
12:33:7 Optical and Excitonic Properties of Crystalline ZnS Nanowires: Toward Efficient Ultraviolet Emission at Room Temperature
DOI:10.1021/nl102987z JN:NANO LETTERS PY:2010
TC:51 AU: Chen, Rui;Li, Dehui;Liu, Bo;Peng, Zeping;Gurzadyan, Gagik G.;Xiong, Qihua;Sun, Handong;
12:33:8 Twinning-, Polytypism-, and Polarity-Induced Morphological Modulation in Nonplanar Nanostructures with van der Waals Epitaxy
DOI:10.1002/adfm.201202027 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:15 AU: Utama, Muhammad Iqbal Bakti;de la Mata, Maria;Magen, Cesar;Arbiol, Jordi;Xiong, Qihua;
12:33:9 Surface Depletion Induced Quantum Confinement in CdS Nanobelts
DOI:10.1021/nn301053r JN:ACS NANO PY:2012
TC:28 AU: Li, Dehui;Zhang, Jun;Xiong, Qihua;
12:33:10 Composition-Tunable Vertically Aligned CdSxSe1-x Nanowire Arrays via van der Waals Epitaxy: Investigation of Optical Properties and Photocatalytic Behavior
DOI:10.1002/adma.201104996 JN:ADVANCED MATERIALS PY:2012
TC:23 AU: Pan, Jun;Utama, Muhammad Iqbal Bakti;Zhang, Qing;Liu, Xinfeng;Peng, Bo;Wong, Lai Mun;Sum, Tze Chien;Wang, Shijie;Xiong, Qihua;
12:33:11 Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy
DOI:10.1103/PhysRevB.85.085418 JN:PHYSICAL REVIEW B PY:2012
TC:26 AU: Zhang, Q.;Zhang, J.;Utama, M. I. B.;Peng, B.;de la Mata, M.;Arbiol, J.;Xiong, Qihua;
12:33:12 The role of glutathione on shape control and photoelectrical property of cadmium sulfide nanorod arrays
DOI:10.1016/j.jcis.2012.10.035 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:12 AU: Yang, Chunyan;Liu, Sheng;Li, Mingrun;Wang, Xiuli;Zhu, Jian;Chong, Ruifeng;Yang, Dong;Zhang, Wen-Hua;Li, Can;
12:33:13 Diameter Scaling of the Optical Band Gap in Individual CdSe Nanowires
DOI:10.1021/nn202199f JN:ACS NANO PY:2011
TC:17 AU: Myalitsin, Anton;Strelow, Christian;Wang, Zhe;Li, Zhen;Kipp, Tobias;Mews, Alf;
12:33:14 One-pot aqueous synthesis of cysteine-capped CdTe/CdS core-shell nanowires
DOI:10.1007/s11051-014-2420-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Shan, Yukai;Xiao, Zhen;Chuan, Yongming;Li, Hongli;Yuan, Minglong;Li, Zhen;Dou, Shixue;
12:33:15 Highly Enhanced Exciton Recombination Rate by Strong Electron-Phonon Coupling in Single ZnTe Nanobelt
DOI:10.1021/nl3037867 JN:NANO LETTERS PY:2012
TC:10 AU: Zhang, Qing;Liu, Xinfeng;Utama, Muhammad Iqbal Bakti;Zhang, Jun;de la Mata, Maria;Arbiol, Jordi;Lu, Yunhao;Sum, Tze Chien;Xiong, Qihua;
12:33:16 Ultralong CdTe Nanowires: Catalyst-Free Synthesis and High-Yield Transformation into Core-Shell Heterostructures
DOI:10.1002/adfm.201102800 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:14 AU: Jiang, Feng;Liu, Jinjin;Li, Yunchao;Fan, Louzhen;Ding, Yuqin;Li, Yongfang;
12:33:17 Enhanced Raman spectroscopy induced by surface defects in ripple-like CdS microbelts
DOI:10.1063/1.4866862 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zeng Xianghua;Hu Chuan;Zhou Min;Xia Weiwei;Meng Xiangdong;
12:33:18 Electric-Field-Dependent Photoconductivity in CdS Nanowires and Nanobelts: Exciton Ionization, Franz Keldysh, and Stark Effects
DOI:10.1021/n1300749z JN:NANO LETTERS PY:2012
TC:24 AU: Li, Dehui;Zhang, Jun;Zhang, Qing;Xiong, Qihua;
12:33:19 Shape- and phase-controlled ZnS nanostructures and their optical properties
DOI:10.1016/j.materresbull.2014.06.027 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Zhou, Xin;Zeng, Xianghua;Yan, Xiaoqing;Xia, Weiwei;Zhou, Yuxue;Shen, Xiaoshuang;
12:33:20 Catalytic growth of CdTe nanowires by closed space sublimation method
DOI:10.1016/j.tsf.2013.03.068 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Yang, Gwangseok;Jung, Younghun;Chun, Seungju;Kim, Donghwan;Kim, Jihyun;
12:33:21 Size and surface effects on transient photoconductivity in CdS nanobelts probed by time-resolved terahertz spectroscopy
DOI:10.1063/1.4748300 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Li, Mingjie;Wu, Bo;Ekahana, Sandy Adhitia;Utama, Muhammad Iqbal Bakti;Xing, Guichuan;Xiong, Qihua;Sum, Tze Chien;Zhang, Xinhai;
12:33:22 White light emission from CdS/Si nanoheterostructure array
DOI:10.1016/j.matlet.2014.08.001 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Li, Yong;Yuan, Shu Qing;Li, Xin Jian;
12:33:23 Resonant Raman scattering from CdS nanocrystals enhanced by interstitial Mn
DOI:10.1063/1.4792512 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Zhao, P. Q.;Liu, L. Z.;Xue, H. T.;Wu, X. L.;Shen, J. C.;Chu, Paul K.;
12:33:24 Controlled synthesis of highly orientation-ordered single crystal Cd1-xZnxS nanorod array
DOI:10.1016/j.jallcom.2014.07.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Hou, Junwei;Lv, Xiaoyi;Li, Zhihong;Zou, Hua;Zeng, Xiaofei;
12:33:25 Multiphonon scattering and photoluminescence of two dimensional ZnS nanosheets grown within Na-4 mica
DOI:10.1063/1.4757930 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Mandal, Amrita;Mitra, Sreemanta;Datta, Anindya;Banerjee, Sourish;Dhara, Sandip;Chakravorty, Dipankar;
12:33:26 One-step synthesis of CdTe branched nanowires and nanorod arrays
DOI:10.1016/j.apsusc.2011.04.008 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Hou, Junwei;Yang, Xiuchun;Lv, Xiaoyi;Peng, Dengfeng;Huang, Min;Wang, Qingyao;
12:33:27 Continuous Wave Nanowire Lasing
DOI:10.1021/nl401355b JN:NANO LETTERS PY:2013
TC:6 AU: Roeder, Robert;Wille, Marcel;Geburt, Sebastian;Rensberg, Jura;Zhang, Mengyao;Lu, Jia Grace;Capasso, Federico;Buschinger, Robert;Peschel, Ulf;Ronning, Carsten;
12:33:28 Solid-State Semiconductor Optical Cryocooler Based on CdS Nanobelts
DOI:10.1021/nl501831f JN:NANO LETTERS PY:2014
TC:2 AU: Li, Dehui;Zhang, Jun;Wang, Xinjiang;Huang, Baoling;Xiong, Qihua;
12:33:29 Band-gap renormalization in InP/GaxIn1-xP quantum dots
DOI:10.1103/PhysRevB.83.245447 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Nowak, A. K.;Gallardo, E.;van der Meulen, H. P.;Calleja, J. M.;Ripalda, J. M.;Gonzalez, L.;Gonzalez, Y.;
12:33:30 Successive Solution-Liquid-Solid (SLS) Growth of Heterogeneous Nanowires
DOI:10.1021/cm4015018 JN:CHEMISTRY OF MATERIALS PY:2013
TC:2 AU: Kim, Min-Seok;Sung, Yun-Mo;
12:33:31 Quantum-Confined Emission and Fluorescence Blinking of Individual Exciton Complexes in CdSe Nanowires
DOI:10.1021/nl503331t JN:NANO LETTERS PY:2014
TC:3 AU: Franz, Dennis;Reich, Aina;Strelow, Christian;Wang, Zhe;Komowski, Andreas;Kipp, Tobias;Mews, Alf;
12:33:32 Enhanced Lateral Growth of Zinc Oxide Nanowires on Sensor Chips
DOI:10.1111/j.1551-2916.2010.04151.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:3 AU: Chiang, K. C.;Wu, Wan-Yu;Ting, Jyh-Ming;
12:33:33 Epitaxial CdTe Rods on Au/Si Islands from a Molecular Compound
DOI:10.1021/ja1017943 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:6 AU: Ahmad, Kibriya;Afzaal, Mohammad;Ritch, Jamie S.;Chivers, Tristram;O'Brien, Paul;
12:33:34 Temperature and composition dependence of photoluminescence dynamics in CdSxSe1-x (0 <= x <= 1) nanobelts
DOI:10.1063/1.3702889 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Liu, H. W.;Lu, J. P.;Fan, H. M.;Sow, C. H.;Tang, S. H.;Zhang, X. H.;
12:34:1 Carbon impurities and the yellow luminescence in GaN
DOI:10.1063/1.3492841 JN:APPLIED PHYSICS LETTERS PY:2010
TC:98 AU: Lyons, J. L.;Janotti, A.;Van de Walle, C. G.;
12:34:2 Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
DOI:10.1103/PhysRevLett.108.156403 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:42 AU: Lyons, John L.;Janotti, Anderson;Van de Walle, Chris G.;
12:34:3 Dual nature of acceptors in GaN and ZnO: The curious case of the shallow Mg-Ga deep state
DOI:10.1063/1.3383236 JN:APPLIED PHYSICS LETTERS PY:2010
TC:36 AU: Lany, Stephan;Zunger, Alex;
12:34:4 The feasibility of tunable p-type Mg doping in a GaN monolayer nano sheet
DOI:10.1016/j.actamat.2013.09.010 JN:ACTA MATERIALIA PY:2013
TC:5 AU: Xia, Congxin;Peng, Yuting;Wei, Shuyi;Jia, Yu;
12:34:5 Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
DOI:10.1103/PhysRevLett.110.087404 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:20 AU: Demchenko, D. O.;Diallo, I. C.;Reshchikov, M. A.;
12:34:6 Tunable electronic structures of p-type Mg doping in AlN nanosheet
DOI:10.1063/1.4891238 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Peng, Yuting;Xia, Congxin;Zhang, Heng;Wang, Tianxing;Wei, Shuyi;Jia, Yu;
12:34:7 Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
DOI:10.1103/PhysRevB.84.075212 JN:PHYSICAL REVIEW B PY:2011
TC:20 AU: Reshchikov, Michael A.;Kvasov, Alexander A.;Bishop, Marilyn F.;McMullen, Tom;Usikov, Alexander;Soukhoveev, Vitali;Dmitriev, Vladimir A.;
12:34:8 Role of nitrogen vacancies in the luminescence of Mg-doped GaN
DOI:10.1063/1.3699009 JN:APPLIED PHYSICS LETTERS PY:2012
TC:21 AU: Yan, Qimin;Janotti, Anderson;Scheffler, Matthias;Van de Walle, Chris G.;
12:34:9 Green luminescence in Mg-doped GaN
DOI:10.1103/PhysRevB.90.035207 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Reshchikov, M. A.;Demchenko, D. O.;McNamara, J. D.;Fernandez-Garrido, S.;Calarco, R.;
12:34:10 Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
DOI:10.1103/PhysRevB.89.035204 JN:PHYSICAL REVIEW B PY:2014
TC:4 AU: Lyons, J. L.;Janotti, A.;Van de Walle, C. G.;
12:34:11 First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
DOI:10.1103/PhysRevLett.109.267401 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:14 AU: Alkauskas, Audrius;Lyons, John L.;Steiauf, Daniel;Van de Walle, Chris G.;
12:34:12 First-principles theory of nonradiative carrier capture via multiphonon emission
DOI:10.1103/PhysRevB.90.075202 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Alkauskas, Audrius;Yan, Qimin;Van de Walle, Chris G.;
12:34:13 Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN
DOI:10.1103/PhysRevB.87.115205 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Reshchikov, M. A.;McNamara, J. D.;Fernandez-Garrido, S.;Calarco, R.;
12:34:14 Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors
DOI:10.1063/1.4838075 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Lyons, J. L.;Janotti, A.;Van de Walle, C. G.;
12:34:15 Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
DOI:10.1063/1.3699312 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Reshchikov, M. A.;Foussekis, M.;McNamara, J. D.;Behrends, A.;Bakin, A.;Waag, A.;
12:34:16 Blue luminescence and Zn acceptor in GaN
DOI:10.1103/PhysRevB.88.115204 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Demchenko, D. O.;Reshchikov, M. A.;
12:34:17 Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
DOI:10.1063/1.3429086 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Szabo, Aron;Son, Ngyen Tien;Janzen, Erik;Gali, Adam;
12:34:18 Two-step thermal quenching of photoluminescence in Zn-doped GaN
DOI:10.1103/PhysRevB.85.245203 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Reshchikov, Michael A.;
12:34:19 Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors
DOI:10.1063/1.4838038 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Reshchikov, Michael A.;
12:34:20 Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors
DOI:10.1103/PhysRevLett.109.245501 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:5 AU: Shi, Lin;Wang, Lin-Wang;
12:34:21 Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
DOI:10.1063/1.3442918 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Yoshida, Harumasa;Kuwabara, Masakazu;Yamashita, Yoji;Uchiyama, Kazuya;Kan, Hirofumi;
12:34:22 Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam
DOI:10.1063/1.4866966 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Uedono, Akira;Fujishima, Tatsuya;Cao, Yu;Zhang, Yang;Yoshihara, Nakaaki;Ishibashi, Shoji;Sumiya, Masatomo;Laboutin, Oleg;Johnson, Wayne;Palacios, Tomas;
12:34:23 Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
DOI:10.1063/1.4873957 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Yang, J.;Zhao, D. G.;Jiang, D. S.;Chen, P.;Liu, Z. S.;Le, L. C.;Li, X. J.;He, X. G.;Liu, J. P.;Zhang, S. M.;Wang, H.;Zhu, J. J.;Yang, H.;
12:34:24 Roles of an oxygen Frenkel pair in the photoluminescence of Bi3+-doped Y2O3: computational predictions and experimental verifications
DOI:10.1039/c4tc00438h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Choi, Heechae;Cho, So Hye;Khan, Sovann;Lee, Kwang-Ryeol;Kim, Seungchul;
12:34:25 Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN
DOI:10.1103/PhysRevB.88.075204 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Reshchikov, Michael A.;Olsen, Anita J.;Bishop, Marilyn F.;McMullen, Tom;
12:34:26 Difficulty in predicting shallow defects with hybrid functionals: Implication of the long-range exchange interaction
DOI:10.1103/PhysRevB.88.035134 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Bang, Junhyeok;Sun, Y. Y.;Abtew, Tesfaye A.;Samanta, Amit;Zhang, Peihong;Zhang, S. B.;
12:34:27 Magnetic resonance and the structure of magnesium acceptors in gallium nitride
DOI:10.1103/PhysRevB.87.235208 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Davies, J. J.;
12:34:28 Precise lattice location of substitutional and interstitial Mg in AlN
DOI:10.1063/1.4858389 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Amorim, L. M.;Wahl, U.;Pereira, L. M. C.;Decoster, S.;Silva, D. J.;da Silva, M. R.;Gottberg, A.;Correia, J. G.;Temst, K.;Vantomme, A.;
12:34:29 Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
DOI:10.1116/1.4892786 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: He, Xiaoguang;Zhao, Degang;Jiang, Desheng;Zhu, Jianjun;Chen, Ping;Liu, Zongshun;Le, Lingcong;Yang, Jing;Li, Xiaojing;Zhang, Shuming;Yang, Hui;
12:34:30 Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si
DOI:10.1063/1.3655678 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Reshchikov, M. A.;Willyard, A. G.;Behrends, A.;Bakin, A.;Waag, A.;
12:34:31 Time-resolved photoluminescence from defects in n-type GaN
DOI:10.1063/1.4867043 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Reshchikov, M. A.;
12:34:32 Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
DOI:10.1063/1.4819334 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Fujishima, Tatsuya;Joglekar, Sameer;Piedra, Daniel;Lee, Hyung-Seok;Zhang, Yuhao;Uedono, Akira;Palacios, Tomas;
12:34:33 Hydrogen-related, deeply bound excitons in Mg-doped GaN films
DOI:10.1063/1.4819029 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Juday, R.;Fischer, A. M.;Huang, Y.;Huang, J. Y.;Kim, H. J.;Ryou, J-H;Dupuis, R. D.;Bour, D. P.;Ponce, F. A.;
12:34:34 Effects of growth pressure on the properties of p-GaN layers
DOI:10.1016/j.jcrysgro.2011.04.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Xian, Yulun;Huang, Shanjin;Zheng, Zhiyuan;Fan, Bingfeng;Wu, Zhisheng;Jiang, Hao;Wang, Gang;
12:34:35 Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs
DOI:10.1016/j.jcrysgro.2012.10.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Fikry, M.;Ren, Z.;Madel, M.;Tischer, I.;Thonke, K.;Scholz, F.;
12:34:36 InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices
DOI:10.1016/j.jcrysgro.2015.02.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Gherasoiu, I.;Yu, K. M.;Reichertz, L.;Walukiewicz, W.;
12:34:37 The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN
DOI:10.1007/s11664-014-3005-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Fu, Binglei;Liu, Naixin;Zhang, Ning;Si, Zhao;Wei, Xuecheng;Wang, Xiaodong;Lu, Hongxi;Liu, Zhe;Wei, Tongbo;Yi, Xiaoyan;Li, Jinmin;Wang, Junxi;
12:34:38 Multiphonon hole trapping from first principles
DOI:10.1116/1.3533269 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Schanovsky, F.;Goes, W.;Grasser, T.;
12:34:39 Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN
DOI:10.1063/1.4819245 JN:AIP ADVANCES PY:2013
TC:1 AU: Sakai, Yusuke;Selvaraj, S. Lawrence;Oda, Osamu;Egawa, Takashi;
12:34:40 Shear strain induced indirect to direct transition in band gap in AlN monolayer nanosheet
DOI:10.1016/j.commatsci.2014.01.026 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:4 AU: Liu, Peng;De Sarkar, Abir;Ahuja, Rajeev;
12:34:41 Optical and magnetic resonance studies of Be-doped GaN bulk crystals
DOI:10.1016/j.jcrysgro.2014.06.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Glaser, E. R.;Freitas, J. A., Jr.;Storm, D. F.;Teisseyre, Henryk;Bockowski, Michal;
12:34:42 Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts
DOI:10.1116/1.3549883 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Nakano, Yoshitaka;Lozac'h, Mickael;Matsuki, Nobuyuki;Sakoda, Kazuaki;Sumiya, Masatomo;
12:35:1 Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires
DOI:10.1103/PhysRevB.82.115319 JN:PHYSICAL REVIEW B PY:2010
TC:35 AU: Zhang, Wenxing;Delerue, Christophe;Niquet, Yann-Michel;Allan, Guy;Wang, Enge;
12:35:2 Effects of Strain on the Carrier Mobility in Silicon Nanowires
DOI:10.1021/nl3010995 JN:NANO LETTERS PY:2012
TC:41 AU: Niquet, Yann-Michel;Delerue, Christophe;Krzeminski, Christophe;
12:35:3 Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation
DOI:10.1103/PhysRevB.84.085313 JN:PHYSICAL REVIEW B PY:2011
TC:19 AU: Neophytou, Neophytos;Kosina, Hans;
12:35:4 Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors
DOI:10.1063/1.3540689 JN:APPLIED PHYSICS LETTERS PY:2011
TC:24 AU: Luisier, Mathieu;
12:35:5 Nanoscale device modeling using a conserving analytic continuation technique
DOI:10.1103/PhysRevB.88.075147 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Mera, H.;Lannoo, M.;Cavassilas, N.;Bescond, M.;
12:35:6 Charged impurity scattering and mobility in gated silicon nanowires
DOI:10.1103/PhysRevB.82.115318 JN:PHYSICAL REVIEW B PY:2010
TC:20 AU: Persson, Martin P.;Mera, Hector;Niquet, Yann-Michel;Delerue, Christophe;Diarra, Mamadou;
12:35:7 Carrier mobility in strained Ge nanowires
DOI:10.1063/1.4759346 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Niquet, Yann-Michel;Delerue, Christophe;
12:35:8 Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique
DOI:10.1063/1.4825226 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Bescond, Marc;Li, Changsheng;Mera, Hector;Cavassilas, Nicolas;Lannoo, Michel;
12:35:9 Impurity-limited mobility and variability in gate-all-around silicon nanowires
DOI:10.1063/1.4704174 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Niquet, Yann-Michel;Mera, Hector;Delerue, Christophe;
12:35:10 Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?
DOI:10.1063/1.4903475 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, Jing;Jomaa, Narjes;Niquet, Yann-Michel;Said, Moncef;Delerue, Christophe;
12:35:11 Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
DOI:10.1021/nl9034384 JN:NANO LETTERS PY:2010
TC:25 AU: Murphy-Armando, F.;Fagas, G.;Greer, J. C.;
12:35:12 One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors
DOI:10.1063/1.4775365 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Cavassilas, Nicolas;Bescond, Marc;Mera, Hector;Lannoo, Michel;
12:35:13 Atomistic calculation of the thermoelectric properties of Si nanowires
DOI:10.1103/PhysRevB.90.045429 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Bejenari, I.;Kratzer, P.;
12:35:14 Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
DOI:10.1063/1.4864376 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Niquet, Yann-Michel;Viet-Hung Nguyen;Triozon, Francois;Duchemin, Ivan;Nier, Olivier;Rideau, Denis;
12:35:15 Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
DOI:10.1103/PhysRevB.86.161404 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Mera, H.;Lannoo, M.;Li, C.;Cavassilas, N.;Bescond, M.;
12:35:16 Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
DOI:10.1063/1.3399999 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Bescond, M.;Lannoo, M.;Raymond, L.;Michelini, F.;
12:35:17 Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation
DOI:10.1063/1.4845515 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Rhyner, Reto;Luisier, Mathieu;
12:35:18 Influence of electron-phonon interactions in single dopant nanowire transistors
DOI:10.1063/1.4898863 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Carrillo-Nunez, H.;Bescond, M.;Cavassilas, N.;Dib, E.;Lannoo, M.;
12:35:19 Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
DOI:10.1063/1.3556457 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Cavassilas, Nicolas;Michelini, Fabienne;Bescond, Marc;
12:35:20 Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
DOI:10.1063/1.4819241 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Dib, Elias;Bescond, Marc;Cavassilas, Nicolas;Michelini, Fabienne;Raymond, Laurent;Lannoo, Michel;
12:35:21 Electronic structure and transport properties of Si nanotubes
DOI:10.1063/1.4817527 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Li, Jing;Gu, Tang;Delerue, Christophe;Niquet, Yann-Michel;
12:35:22 Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
DOI:10.1063/1.4772720 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Aldegunde, M.;Martinez, A.;Barker, J. R.;
12:35:23 Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
DOI:10.1063/1.3628316 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Pons, Nicolas;Cavassilas, Nicolas;Raymond, Laurent;Michelini, Fabienne;Lannoo, Michel;Bescond, Marc;
12:35:24 Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
DOI:10.1063/1.3658856 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Aldegunde, M.;Martinez, A.;Asenov, A.;
12:35:25 Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells
DOI:10.1103/PhysRevB.87.081302 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Aeberhard, U.;
12:35:26 Atomistic modeling of electron-phonon interaction and electron mobility in Si nanowires
DOI:10.1063/1.3695999 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Yamada, Y.;Tsuchiya, H.;Ogawa, M.;
12:35:27 Quantum-kinetic theory of photocurrent generation via direct and phonon-mediated optical transitions
DOI:10.1103/PhysRevB.84.035454 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Aeberhard, U.;
12:35:28 Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation
DOI:10.1063/1.3352558 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Cavassilas, Nicolas;Pons, Nicolas;Michelini, Fabienne;Bescond, Marc;
12:35:29 Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure
DOI:10.1063/1.3552593 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Morioka, Naoya;Yoshioka, Hironori;Suda, Jun;Kimoto, Tsunenobu;
12:35:30 Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment
DOI:10.1063/1.4719081 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Dura, J.;Triozon, F.;Barraud, S.;Munteanu, D.;Martinie, S.;Autran, J. L.;
12:35:31 Influence of alloy disorder scattering on the hole mobility of SiGe nanowires
DOI:10.1063/1.4904856 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Martinez-Blanque, Celso;Ruiz, Francisco G.;Godoy, Andres;Marin, Enrique G.;Donetti, Luca;Gamiz, Francisco;
12:35:32 Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
DOI:10.1063/1.4904844 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Tanaka, H.;Mori, S.;Morioka, N.;Suda, J.;Kimoto, T.;
12:35:33 Quantum transport of a nanowire field-effect transistor with complex phonon self-energy
DOI:10.1063/1.4894066 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Valin, R.;Aldegunde, M.;Martinez, A.;Barker, J. R.;
12:35:34 Conductance fluctuations in Si nanowires studied from first-principles
DOI:10.1063/1.4892673 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Iori, Federico;Ossicini, Stefano;Rurali, Riccardo;
12:35:35 Equivalent transport models in atomistic quantum wires
DOI:10.1103/PhysRevB.85.035317 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Mil'nikov, Gennady;Mori, Nobuya;Kamakura, Yoshinari;
12:35:36 Computational comparison of conductivity and mobility models for silicon nanowire devices
DOI:10.1063/1.3573487 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Frey, M.;Esposito, A.;Schenk, A.;
12:35:37 Enhanced ionized impurity scattering in nanowires
DOI:10.1063/1.4811534 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Oh, Jung Hyun;Lee, Seok-Hee;Shin, Mincheol;
12:35:38 Silicon Nanotube Field Effect Transistor with Core-Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits
DOI:10.1021/nl202563s JN:NANO LETTERS PY:2011
TC:14 AU: Fahad, Hossain M.;Smith, Casey E.;Rojas, Jhonathan P.;Hussain, Muhammad M.;
12:35:39 Quantum-kinetic theory of steady-state photocurrent generation in thin films: Coherent versus incoherent coupling
DOI:10.1103/PhysRevB.89.115303 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Aeberhard, U.;
12:35:40 Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
DOI:10.1063/1.3318249 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Hashemi, Pouya;Kim, Meekyung;Hennessy, John;Gomez, Leonardo;Antoniadis, Dimitri A.;Hoyt, Judy L.;
12:35:41 Dissipative quantum transport in silicon nanowires based on Wigner transport equation
DOI:10.1063/1.3654143 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Barraud, Sylvain;
12:35:42 Distributed non-equilibrium Green's function algorithms for the simulation of nanoelectronic devices with scattering
DOI:10.1063/1.3624612 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Cauley, Stephen;Luisier, Mathieu;Balakrishnan, Venkataramanan;Klimeck, Gerhard;Koh, Cheng-Kok;
12:35:43 Does the low hole transport mass in < 110 > and < 111 > Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study
DOI:10.1063/1.4729806 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Kotlyar, R.;Linton, T. D.;Rios, R.;Giles, M. D.;Cea, S. M.;Kuhn, K. J.;Povolotskyi, Michael;Kubis, Tillmann;Klimeck, Gerhard;
12:35:44 Low rank approximation method for efficient Green's function calculation of dissipative quantum transport
DOI:10.1063/1.4809638 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Zeng, Lang;He, Yu;Povolotskyi, Michael;Liu, XiaoYan;Klimeck, Gerhard;Kubis, Tillmann;
12:35:45 Nonequilibrium Green's function theory of coherent excitonic effects in the photocurrent response of semiconductor nanostructures
DOI:10.1103/PhysRevB.86.115317 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Aeberhard, U.;
12:35:46 The growth and radial analysis of Si/Ge core-shell nanowires
DOI:10.1063/1.3531631 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Chang, Hsu-Kai;Lee, Si-Chen;
12:35:47 Paramagnetic P-b-type interface defects in thermal (110)Si/SiO2
DOI:10.1063/1.3590271 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Keunen, K.;Stesmans, A.;Afanas'ev, V. V.;
12:35:48 Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
DOI:10.1063/1.3592252 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Lee, Yeonghun;Kakushima, Kuniyuki;Natori, Kenji;Iwai, Hiroshi;
12:36:1 Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
DOI:10.1021/nl100136b JN:NANO LETTERS PY:2010
TC:63 AU: Kim, Cheol-Joo;Lee, Hyun-Seung;Cho, Yong-Jun;Kang, Kibum;Jo, Moon-Ho;
12:36:2 Electric Field Dependent Photocurrent Decay Length in Single Lead Sulfide Nanowire Field Effect Transistors
DOI:10.1021/nl1038456 JN:NANO LETTERS PY:2011
TC:31 AU: Graham, Rion;Miller, Chris;Oh, Eunsoon;Yu, Dong;
12:36:3 Electrothermal Dynamics of Semiconductor Nanowires under Local Carrier Modulation
DOI:10.1021/nl2018806 JN:NANO LETTERS PY:2011
TC:17 AU: Fu, Deyi;Zou, Jijun;Wang, Kevin;Zhang, Rong;Yu, Dong;Wu, Junqiao;
12:36:4 Controlled Ambipolar Doping and Gate Voltage Dependent Carrier Diffusion Length in Lead Sulfide Nanowires
DOI:10.1021/nl303294k JN:NANO LETTERS PY:2012
TC:12 AU: Yang, Yiming;Li, Jiao;Wu, Hengkui;Oh, Eunsoon;Yu, Dong;
12:36:5 Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires
DOI:10.1063/1.3456390 JN:APPLIED PHYSICS LETTERS PY:2010
TC:31 AU: Soudi, A.;Dhakal, P.;Gu, Y.;
12:36:6 Time-Resolved Photoinduced Thermoelectric and Transport Currents in GaAs Nanowires
DOI:10.1021/nl300262j JN:NANO LETTERS PY:2012
TC:13 AU: Prechtel, Leonhard;Padilla, Milan;Erhard, Nadine;Karl, Helmut;Abstreiter, Gerhard;Morral, Anna Fontcuberta I.;Holleitner, Alexander W.;
12:36:7 On-Nanowire Band-Graded Si:Ge Photodetectors
DOI:10.1002/adma.201004034 JN:ADVANCED MATERIALS PY:2011
TC:20 AU: Kim, Cheol-Joo;Lee, Hyun-Seung;Cho, Yong-Jun;Yang, Jee-Eun;Lee, Ru Ri;Lee, Ja Kyung;Jo, Moon-Ho;
12:36:8 High Carrier Mobility in Single Ultrathin Colloidal Lead Selenide Nanowire Field Effect Transistors
DOI:10.1021/nl302161n JN:NANO LETTERS PY:2012
TC:11 AU: Graham, Rion;Yu, Dong;
12:36:9 Imaging Charge Separation and Carrier Recombination in Nanowire p-i-n Junctions Using Ultrafast Microscopy
DOI:10.1021/nl5012118 JN:NANO LETTERS PY:2014
TC:6 AU: Gabriel, Michelle M.;Grumstrup, Erik M.;Kirschbrown, Justin R.;Pinion, Christopher W.;Christesen, Joseph D.;Zigler, David F.;Cating, Emma E. M.;Cahoon, James F.;Papanikolas, John M.;
12:36:10 Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors
DOI:10.1021/nn5042619 JN:ACS NANO PY:2014
TC:3 AU: Son, Byung Hee;Park, Jae-Ku;Hong, Jung Taek;Park, Ji-Yong;Lee, Soonil;Ahn, Yeong Hwan;
12:36:11 Imaging Schottky Barriers and Ohmic Contacts in PbS Quantum Dot Devices
DOI:10.1021/nl204116b JN:NANO LETTERS PY:2012
TC:18 AU: Strasfeld, David B.;Dorn, August;Wanger, Darcy D.;Bawendi, Moungi G.;
12:36:12 Unusually long free carrier lifetime and metal-insulator band offset in vanadium dioxide
DOI:10.1103/PhysRevB.85.085111 JN:PHYSICAL REVIEW B PY:2012
TC:10 AU: Miller, Chris;Triplett, Mark;Lammatao, Joel;Suh, Joonki;Fu, Deyi;Wu, Junqiao;Yu, Dong;
12:36:13 Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires
DOI:10.1021/nl301863e JN:NANO LETTERS PY:2012
TC:12 AU: Soudi, Afsoon;Hsu, Cheng-Han;Gu, Yi;
12:36:14 Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p-n Junctions
DOI:10.1021/nl204505p JN:NANO LETTERS PY:2012
TC:19 AU: Mohite, A. D.;Perea, D. E.;Singh, S.;Dayeh, S. A.;Campbell, I. H.;Picraux, S. T.;Htoon, H.;
12:36:15 Direct Imaging of Free Carrier and Trap Carrier Motion in Silicon Nanowires by Spatially-Separated Femtosecond Pump-Probe Microscopy
DOI:10.1021/nl400265b JN:NANO LETTERS PY:2013
TC:22 AU: Gabriel, Michelle M.;Kirschbrown, Justin R.;Christesen, Joseph D.;Pinion, Christopher W.;Zigler, David F.;Grumstrup, Erik M.;Mehl, Brian P.;Cating, Emma E. M.;Cahoon, James F.;Papanikolas, John M.;
12:36:16 High intensity induced photocurrent polarity switching in lead sulfide nanowire field effect transistors
DOI:10.1088/0957-4484/25/19/195202 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Yang, Yiming;Peng, Xingyue;Yu, Dong;
12:36:17 Growth of straight one-dimensional Ge/ZnSe heterojunctions with atomically sharp interfaces by catalytic residue controls
DOI:10.1088/0957-4484/25/1/014010 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Kang, Kibum;Heo, Hoseok;Lee, Donghun;Hwang, Inchan;Jo, Moon-Ho;
12:36:18 Mapping Carrier Diffusion in Single Silicon Core-Shell Nanowires with Ultrafast Optical Microscopy
DOI:10.1021/nl303502f JN:NANO LETTERS PY:2012
TC:17 AU: Seo, M. A.;Yoo, J.;Dayeh, S. A.;Picraux, S. T.;Taylor, A. J.;Prasankumar, R. P.;
12:36:19 Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors
DOI:10.1021/nl401698z JN:NANO LETTERS PY:2013
TC:4 AU: Otto, Tyler;Miller, Chris;Tolentino, Jason;Liu, Yao;Law, Matt;Yu, Dong;
12:36:20 Long Minority Carrier Diffusion Lengths in Bridged Silicon Nanowires
DOI:10.1021/nl503870u JN:NANO LETTERS PY:2015
TC:0 AU: Triplett, M.;Yang, Y.;Leonard, F.;Talin, A. Alec;Islam, M. Saif;Yo, D.;
12:36:21 High-Resolution Photocurrent Mapping of Carbon Nanostructures
DOI:10.1021/nn3029088 JN:ACS NANO PY:2012
TC:8 AU: Burghard, Marko;Mews, Alf;
12:36:22 Understanding ultrafast carrier dynamics in single quasi-one-dimensional Si nanowires
DOI:10.1063/1.3685487 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Seo, M. A.;Dayeh, S. A.;Upadhya, P. C.;Martinez, J. A.;Swartzentruber, B. S.;Picraux, S. T.;Taylor, A. J.;Prasankumar, R. P.;
12:36:23 Direct synthesis of high-density lead sulfide nanowires on metal thin films towards efficient infrared light conversion
DOI:10.1088/0957-4484/23/26/265602 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Wu, Hengkui;Yang, Yiming;Oh, Eunsoon;Lai, Fachun;Yu, Dong;
12:36:24 Depolarization effect in optical absorption measurements of one- and two-dimensional nanostructures
DOI:10.1063/1.4752889 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Herman, Lihong H.;Kim, Cheol-Joo;Wang, Zenghui;Jo, Moon-Ho;Park, Jiwoong;
12:36:25 High gain single GaAs nanowire photodetector
DOI:10.1063/1.4816246 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Wang, Hao;
12:36:26 Photocurrent and photovoltaic characteristics of copper sulfide nanowires grown by a hydrothermal method
DOI:10.1016/j.matlet.2014.06.173 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Goswami, Syamanta K.;Kim, Jungdong;Hong, Kimin;Oh, Eunsoon;Yang, Yiming;Yu, Dong;
12:36:27 Morphology control and photovoltaic application of solvothermally synthesized PbS nanostructures
DOI:10.1016/j.matlet.2013.11.064 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Goswami, Syamanta K.;Oh, Eunsoon;
12:36:28 Large Electroabsorption Susceptibility Mediated by Internal Photoconductive Gain in Ge Nanowires
DOI:10.1021/nl3033203 JN:NANO LETTERS PY:2012
TC:3 AU: Lee, Hyun-Seung;Kim, Cheol-Joo;Lee, Donghun;Lee, Ru Ri;Kang, Kibum;Hwang, Inchan;Jo, Moon-Ho;
12:36:29 Diffusion length in nanoporous TiO2 films under above-band-gap illumination
DOI:10.1063/1.4881875 JN:AIP ADVANCES PY:2014
TC:2 AU: Park, J. D.;Son, B. H.;Park, J. K.;Kim, Sang Yong;Park, Ji-Yong;Lee, Soonil;Ahn, Y. H.;
12:36:30 Studies of current-voltage characteristics of nanocrystalline Al/(p)PbSe Schottky barrier junctions
DOI:10.1016/j.mssp.2013.12.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Begum, Anayara;Rahman, Atowar;
12:37:1 Nonlinear Optical Response in Single Alkaline Niobate Nanowires
DOI:10.1021/nl201085b JN:NANO LETTERS PY:2011
TC:58 AU: Dutto, F.;Raillon, C.;Schenk, K.;Radenovic, A.;
12:37:2 Modal Engineering of Second-Harmonic Generation in Single GaP Nanopillars
DOI:10.1021/nl502521y JN:NANO LETTERS PY:2014
TC:6 AU: Sanatinia, Reza;Anand, Srinivasan;Swillo, Marcin;
12:37:3 Individual inorganic nanoparticles: preparation, functionalization and in vitro biomedical diagnostic applications
DOI:10.1039/c2tb00301e JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:30 AU: Ladj, R.;Bitar, A.;Eissa, M.;Mugnier, Y.;Le Dantec, R.;Fessi, H.;Elaissari, A.;
12:37:4 Surface Second-Harmonic Generation from Vertical GaP Nanopillars
DOI:10.1021/nl203866y JN:NANO LETTERS PY:2012
TC:19 AU: Sanatinia, Reza;Swillo, Marcin;Anand, Srinivasan;
12:37:5 Second-Harmonic Generation Imaging of Semiconductor Nanowires with Focused Vector Beams
DOI:10.1021/nl503984b JN:NANO LETTERS PY:2015
TC:0 AU: Bautista, Godofredo;Makitalo, Jouni;Chen, Ya;Dhaka, Veer;Grasso, Marco;Karvonen, Lasse;Jiang, Hua;Huttunen, Mikko J.;Huhtio, Teppo;Lipsanen, Harri;Kauranen, Martti;
12:37:6 High Optical Quality InP-Based Nanopillars Fabricated by a Top-Down Approach
DOI:10.1021/nl202628m JN:NANO LETTERS PY:2011
TC:16 AU: Naureen, Shagufta;Sanatinia, Reza;Shahid, Naeem;Anand, Srinivasan;
12:37:7 Enhancement of Second Harmonic Signal in Nanofabricated Cones
DOI:10.1021/nl403279y JN:NANO LETTERS PY:2013
TC:9 AU: Dutto, F.;Heiss, M.;Lovera, A.;Lopez-Sanchez, O.;Fontcuberta i Morral, A.;Radenovic, A.;
12:37:8 Harmonic Nanocrystals for Biolabeling: A Survey of Optical Properties and Biocompatibility
DOI:10.1021/nn204990n JN:ACS NANO PY:2012
TC:50 AU: Staedler, Davide;Magouroux, Thibaud;Hadji, Rachid;Joulaud, Cecile;Extermann, Jerome;Schwungi, Sebastian;Passemard, Solene;Kasparian, Christelle;Clarke, Gareth;Gerrmann, Mathias;Le Dantec, Ronan;Mugnier, Yannick;Rytz, Daniel;Ciepielewski, Daniel;Galez, Christine;Gerber-Lemaire, Sandrine;Juillerat-Jeanneret, Lucienne;Bonacina, Luigi;Wolf, Jean-Pierre;
12:37:9 Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy
DOI:10.1063/1.4901504 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Amaduzzi, F.;Alarcon-Llado, E.;Russo-Averchi, E.;Matteini, F.;Heiss, M.;Tuetuencueoglu, G.;Conesa-Boj, S.;de la Mata, M.;Arbiol, J.;Fontcuberta i Morral, A.;
12:37:10 Far-Field Imaging for Direct Visualization of Light Interferences in GaAs Nanowires
DOI:10.1021/nl302896n JN:NANO LETTERS PY:2012
TC:15 AU: Grange, Rachel;Broenstrup, Gerald;Kiometzis, Michael;Sergeyev, Anton;Richter, Jessica;Leiterer, Christian;Fritzsche, Wolfgang;Gutsche, Christoph;Lysov, Andrey;Prost, Werner;Tegude, Franz-Josef;Pertsch, Thomas;Tuennermann, Andreas;Christiansen, Silke;
12:37:11 Laterally Emitted Surface Second Harmonic Generation in a Single ZnTe Nanowire
DOI:10.1021/nl401921s JN:NANO LETTERS PY:2013
TC:11 AU: Liu, Weiwei;Wang, Kai;Liu, Zhe;Shen, Guozhen;Lu, Peixiang;
12:37:12 Nanostructuring of GaAs with tailored topologies using colloidal lithography and dry etching
DOI:10.1116/1.4862976 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:6 AU: Awan, Kashif Masud;Sanatinia, Reza;Anand, Srinivasan;
12:37:13 Second-harmonic generation from a single wurtzite GaAs nanoneedle
DOI:10.1063/1.3304118 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Chen, Roger;Crankshaw, Shanna;Tran, Thai;Chuang, Linus C.;Moewe, Michael;Chang-Hasnain, Connie;
12:37:14 Inclusion induced second harmonic generation in low dimensional supramolecular crystals
DOI:10.1039/c3tc31399a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Gu, Jianmin;Yan, Yongli;Zhang, Chuang;Yao, Jiannian;Zhao, Yong Sheng;
12:37:15 Nonlinear Optical Processes in Optically Trapped InP Nanowires
DOI:10.1021/nl2020262 JN:NANO LETTERS PY:2011
TC:17 AU: Wang, Fan;Reece, Peter J.;Paiman, Suriati;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:37:16 Second-Harmonic Generation of Single BaTiO3 Nanoparticles down to 22 nm Diameter
DOI:10.1021/nn401198g JN:ACS NANO PY:2013
TC:13 AU: Kim, Eugene;Steinbrueck, Andrea;Buscaglia, Maria Teresa;Buscaglia, Vincenzo;Pertsch, Thomas;Grange, Rachel;
12:37:17 Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
DOI:10.1063/1.4808447 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Naureen, S.;Shahid, N.;Gustafsson, A.;Liuolia, V.;Marcinkevicius, S.;Anand, S.;
12:37:18 Single Nanowire Optical Correlator
DOI:10.1021/nl5010477 JN:NANO LETTERS PY:2014
TC:11 AU: Yu, Huakang;Fang, Wei;Wu, Xiaoqin;Lin, Xing;Tong, Limin;Liu, Weitao;Wang, Aimin;Shen, Y. Ron;
12:37:19 Precise Determination of the Crystallographic Orientations in Single ZnS Nanowires by Second-Harmonic Generation Microscopy
DOI:10.1021/acs.nanolett.5b00607 JN:NANO LETTERS PY:2015
TC:0 AU: Hu, Hongbo;Wang, Kai;Long, Hua;Liu, Weiwei;Wang, Bing;Lu, Peixiang;
12:37:20 Bioconjugation of barium titanate nanocrystals with immunoglobulin G antibody for second harmonic radiation imaging probes
DOI:10.1016/j.biomaterials.2009.11.096 JN:BIOMATERIALS PY:2010
TC:44 AU: Hsieh, Chia-Lung;Grange, Rachel;Pu, Ye;Psaltis, Demetri;
12:37:21 A perovskite-type KNbO3 nanoneedles based biosensor for direct electrochemistry of hydrogen peroxide
DOI:10.1016/j.ceramint.2014.01.005 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Cai, Bin;Zhao, Minggang;Wang, Ye;Zhou, Yu;Cai, Hui;Ye, Zhizheng;Huang, Jingyun;
12:37:22 Broadband second harmonic generation in GaAs nanowires by femtosecond laser sources
DOI:10.1063/1.4824024 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: He, Hao;Zhang, Xiaoqing;Yan, Xin;Huang, Lili;Gu, Chenglin;Hu, Ming-lie;Zhang, Xia;Ren, Xiao Min;Wang, Chingyue;
12:37:23 Near-resonant second-order nonlinear susceptibility in c-axis oriented ZnO nanorods
DOI:10.1063/1.4893599 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, Weiwei;Wang, Kai;Long, Hua;Chu, Sheng;Wang, Bing;Lu, Peixiang;
12:37:24 Synthesis and second harmonic generation response of KNbO3 nanoneedles
DOI:10.1016/j.jcrysgro.2011.12.066 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:12 AU: Wang, Ye;Chen, Zhong;Ye, Zhizhen;Huang, J. Y.;
12:37:25 Nonlinear Mixing in Nanowire Subwavelength Waveguides
DOI:10.1021/nl201743x JN:NANO LETTERS PY:2011
TC:18 AU: Barrelet, Carl J.;Ee, Ho-Seok;Kwon, Soon-Hong;Park, Hong-Gyu;
12:37:26 Second Harmonic Super-resolution Microscopy for Quantification of mRNA at Single Copy Sensitivity
DOI:10.1021/nn505096t JN:ACS NANO PY:2014
TC:2 AU: Liu, Jing;Cho, Il-Hoon;Cui, Yi;Irudayaraj, Joseph;
12:37:27 Synthesis of cubic LiNbO3 nanoparticles and their application in vitro bioimaging
DOI:10.1007/s00339-014-8630-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Wang, Y.;Zhou, X. Y.;Chen, Z.;Cai, B.;Ye, Z. Z.;Gao, C. Y.;Huang, J. Y.;
12:37:28 Synthesis and waveguiding of single-crystalline LiNbO3 nanorods
DOI:10.1063/1.3557524 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Huang, Jingyun;Chen, Zhong;Zhang, Zesong;Zhu, Chongyu;He, Haiping;Ye, Zhizhen;Qu, Guangyuan;Tong, Limin;
12:37:29 Synthesis and nonlinear optical properties of single-crystalline KNb3O8 nanowires
DOI:10.1088/0957-4484/24/8/085704 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Yu, Bin;Cao, Bo;Cao, Huiqun;Zhang, Xinpeng;Chen, Danni;Qu, Junle;Niu, Hanben;
12:37:30 High-Speed Tracking of Murine Cardiac Stem Cells by Harmonic Nanodoublers
DOI:10.1002/smll.201200366 JN:SMALL PY:2012
TC:17 AU: Magouroux, Thibaud;Extermann, Jerome;Hoffmann, Pernilla;Mugnier, Yannick;Le Dantec, Ronan;Jaconi, Marisa E.;Kasparian, Christelle;Ciepielewski, Daniel;Bonacina, Luigi;Wolf, Jean-Pierre;
12:37:31 Broadband opto-mechanical phase shifter for photonic integrated circuits
DOI:10.1063/1.4746761 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Guo, Xiang;Zou, Chang-Ling;Ren, Xi-Feng;Sun, Fang-Wen;Guo, Guang-Can;
12:37:32 In-line high efficient fiber polarizer based on surface plasmon
DOI:10.1063/1.3678591 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Dong, Chun-Hua;Zou, Chang-Ling;Ren, Xi-Feng;Guo, Guang-Can;Sun, Fang-Wen;
12:37:33 Potassium niobate nanostructures: controllable morphology, growth mechanism, and photocatalytic activity
DOI:10.1039/c2ta01056a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:7 AU: Jiang, Linqin;Qiu, Yu;Yi, Zhiguo;
12:37:34 Nonlinear Correlation Spectroscopy (NLCS)
DOI:10.1021/nl300070n JN:NANO LETTERS PY:2012
TC:16 AU: Geissbuehler, Matthias;Bonacina, Luigi;Shcheslavskiy, Vladislav;Bocchio, Noelia L.;Geissbuehler, Stefan;Leutenegger, Marcel;Maerki, Iwan;Wolf, Jean-Pierre;Lasser, Theo;
12:37:35 Synthesis of Optical-Quality Single-Crystal beta-BaB2O4 Microwires and Nanowires
DOI:10.1002/adfm.201201866 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:4 AU: Qu, Guangyuan;Hu, Zhifang;Wang, Yipei;Yang, Qing;Tong, Limin;
12:37:36 Dual light-emitting nanoparticles: second harmonic generation combined with rare-earth photoluminescence
DOI:10.1039/c4tc01227e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Mayer, Ludovic;Dantelle, Geraldine;Jacques, Vincent;Perruchas, Sandrine;Patriarche, Gilles;Roch, Jean-Francois;Gacoin, Thierry;
12:37:37 Photoinduced energy transfer in a CdTe quantum dot-copper phthalocyanine system via two-photon excitation
DOI:10.1016/j.matlet.2014.06.101 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Li, Fang;He, Zhicong;Li, Muye;Zhang, Junpei;Han, Junbo;Lu, Peixiang;
12:37:38 Temperature-dependent adsorption of surfactant molecules and associated crystallization kinetics of noncentrosymmetric Fe(IO3)(3) nanorods in microemulsions
DOI:10.1016/j.materresbull.2013.07.046 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:0 AU: El-Kass, Moustafa;Ladj, Rachid;Mugnier, Yannick;Le Dantec, Ronan;Hadji, Rachid;Marty, Jean-Christophe;Rouxel, Didier;Durand, Christiane;Fontvieille, Dominique;Rogalska, Ewa;Galez, Christine;
12:37:39 Saturation of the second harmonic generation from GaAs-filled metallic hole arrays by nonlinear absorption
DOI:10.1103/PhysRevB.83.165438 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Zhang, Jingyu;Wang, Li;Krishna, Sanjay;Sheik-Bahae, Mansoor;Brueck, S. R. J.;
12:37:40 Absolute second order nonlinear susceptibility of Pt nanowire arrays on MgO faceted substrates with various cross-sectional shapes
DOI:10.1063/1.4819916 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Ogata, Yoichi;Mizutani, Goro;
12:37:41 Crystal lattice determination of ZnSe nanowires with polarization-dependent second harmonic generation microscopy
DOI:10.1088/0957-4484/25/50/505703 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Cisek, Richard;Tokarz, Danielle;Hirmiz, Nehad;Saxena, Ankur;Shik, Alexander;Ruda, Harry E.;Barzda, Virginijus;
12:37:42 Nonlinear Optical Response in Single Alkaline Niobate Nanowires (vol 11, pg 2517, 2011)
DOI:10.1021/nl504022y JN:NANO LETTERS PY:2014
TC:0 AU: Dutto, F.;Raillon, C.;Schenk, K.;Radenovic, A.;
12:38:1 Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
DOI:10.1063/1.4809815 JN:APPLIED PHYSICS LETTERS PY:2013
TC:16 AU: Chuang, Steven;Kapadia, Rehan;Fang, Hui;Chang, Ting Chia;Yen, Wen-Chun;Chueh, Yu-Lun;Javey, Ali;
12:38:2 III-V Complementary Metal-Oxide-Semiconductor Electronics on Silicon Substrates
DOI:10.1021/nl301254z JN:NANO LETTERS PY:2012
TC:36 AU: Nah, Junghyo;Fang, Hui;Wang, Chuan;Takei, Kuniharu;Lee, Min Hyung;Plis, E.;Krishna, Sanjay;Javey, Ali;
12:38:3 Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors
DOI:10.1021/nl300228b JN:NANO LETTERS PY:2012
TC:34 AU: Takei, Kuniharu;Madsen, Morten;Fang, Hui;Kapadia, Rehan;Chuang, Steven;Kim, Ha Sul;Liu, Chin-Hung;Plis, E.;Nah, Junghyo;Krishna, Sanjay;Chueh, Yu-Lun;Guo, Jing;Javey, Ali;
12:38:4 Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
DOI:10.1021/nl2030322 JN:NANO LETTERS PY:2011
TC:38 AU: Takei, Kuniharu;Fang, Hui;Kumar, S. Bala;Kapadia, Rehan;Gao, Qun;Madsen, Morten;Kim, Ha Sul;Liu, Chin-Hung;Chueh, Yu-Lun;Plis, Elena;Krishna, Sanjay;Bechtel, Hans A.;Guo, Jing;Javey, Ali;
12:38:5 Ultrathin body InAs tunneling field-effect transistors on Si substrates
DOI:10.1063/1.3567021 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Ford, Alexandra C.;Yeung, Chun Wing;Chuang, Steven;Kim, Ha Sul;Plis, Elena;Krishna, Sanjay;Hu, Chenming;Javey, Ali;
12:38:6 Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates
DOI:10.1021/nl301699k JN:NANO LETTERS PY:2012
TC:21 AU: Wang, Chuan;Chien, Jun-Chau;Fang, Hui;Takei, Kuniharu;Nah, Junghyo;Plis, E.;Krishna, Sanjay;Niknejad, Ali M.;Javey, Ali;
12:38:7 Nanoscale Semiconductor "X" on Substrate "Y" - Processes, Devices, and Applications
DOI:10.1002/adma.201101192 JN:ADVANCED MATERIALS PY:2011
TC:17 AU: Madsen, Morten;Takei, Kuniharu;Kapadia, Rehan;Fang, Hui;Ko, Hyunhyub;Takahashi, Toshitake;Ford, Alexandra C.;Lee, Min Hyung;Javey, Ali;
12:38:8 Single InAs/GaSb Nanowire Low-Power CMOS Inverter
DOI:10.1021/nl302658y JN:NANO LETTERS PY:2012
TC:24 AU: Dey, Anil W.;Svensson, Johannes;Borg, B. Mattias;Ek, Martin;Wernersson, Lars-Erik;
12:38:9 III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
DOI:10.1063/1.3374447 JN:APPLIED PHYSICS LETTERS PY:2010
TC:37 AU: Yokoyama, Masafumi;Yasuda, Tetsuji;Takagi, Hideki;Miyata, Noriyuki;Urabe, Yuji;Ishii, Hiroyuki;Yamada, Hisashi;Fukuhara, Noboru;Hata, Masahiko;Sugiyama, Masakazu;Nakano, Yoshiaki;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:10 Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
DOI:10.1063/1.4747797 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Chou, H. -Y.;Afanas'ev, V. V.;Houssa, M.;Stesmans, A.;Dong, Lin;Ye, P. D.;
12:38:11 High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics
DOI:10.1063/1.4802779 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Takei, Kuniharu;Kapadia, Rehan;Fang, Hui;Plis, E.;Krishna, Sanjay;Javey, Ali;
12:38:12 Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
DOI:10.1063/1.3636110 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Takei, Kuniharu;Chuang, Steven;Fang, Hui;Kapadia, Rehan;Liu, Chin-Hung;Nah, Junghyo;Kim, Ha Sul;Plis, E.;Krishna, Sanjay;Chueh, Yu-Lun;Javey, Ali;
12:38:13 Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator
DOI:10.1063/1.3537963 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Fang, Hui;Madsen, Morten;Carraro, Carlo;Takei, Kuniharu;Kim, Ha Sul;Plis, Elena;Chen, Szu-Ying;Krishna, Sanjay;Chueh, Yu-Lun;Maboudian, Roya;Javey, Ali;
12:38:14 Electrical properties of GaSb/InAsSb core/shell nanowires
DOI:10.1088/0957-4484/25/42/425201 JN:NANOTECHNOLOGY PY:2014
TC:5 AU: Ganjipour, Bahram;Sepehri, Sobhan;Dey, Anil W.;Tizno, Ofogh;Borg, B. Mattias;Dick, Kimberly A.;Samuelson, Lars;Wernersson, Lars-Erik;Thelander, Claes;
12:38:15 Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.3699226 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Yuan, Ze;Nainani, Aneesh;Bennett, Brian R.;Boos, J. Brad;Ancona, Mario G.;Saraswat, Krishna C.;
12:38:16 Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers
DOI:10.1002/adma.201101309 JN:ADVANCED MATERIALS PY:2011
TC:7 AU: Leite, Marina S.;Warmann, Emily C.;Kimball, Gregory M.;Burgos, Stanley P.;Callahan, Dennis M.;Atwater, Harry A.;
12:38:17 Suppressing the spread length of threading dislocations in AlSb/GaSb superlattice grown on (001) InP substrate
DOI:10.1007/s00339-013-7967-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Shi, Zhenwu;Wang, Lu;Cui, Yanxiang;Liu, Honggang;Tian, Haitao;Wang, Wenxin;Chen, Hong;
12:38:18 InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design
DOI:10.1063/1.3600220 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Nainani, Aneesh;Yuan, Ze;Krishnamohan, Tejas;Bennett, Brian R.;Boos, J. Brad;Reason, Matthew;Ancona, Mario G.;Nishi, Yoshio;Saraswat, Krishna C.;
12:38:19 Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
DOI:10.1021/nn403715p JN:ACS NANO PY:2013
TC:1 AU: Kim, Kyung-Ho;Um, Doo-Seung;Lee, Hochan;Lim, Seongdong;Chang, Joonyeon;Koo, Hyun Cheol;Oh, Min-Wook;Ko, Hyunhyub;Kim, Hyung-jun;
12:38:20 Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates
DOI:10.1063/1.4757943 JN:AIP ADVANCES PY:2012
TC:0 AU: Suzuki, Toshi-kazu;Takita, Hayato;Cong Thanh Nguyen;Iiyama, Koichi;
12:38:21 Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors
DOI:10.1063/1.3552963 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Xia, Ling;Boos, J. Brad;Bennett, Brian R.;Ancona, Mario G.;del Alamo, Jesus A.;
12:38:22 Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
DOI:10.1063/1.4828481 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Kim, SangHyeon;Yokoyama, Masafumi;Nakane, Ryosho;Ichikawa, Osamu;Osada, Takenori;Hata, Masahiko;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:23 Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
DOI:10.1063/1.3663533 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Shi, J.;Wichmann, N.;Roelens, Y.;Bollaert, S.;
12:38:24 Electron distribution and scattering in InAs films on low-k flexible substrates
DOI:10.1063/1.4722798 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Nguyen, Cong Thanh;Shih, Hong-An;Akabori, Masashi;Suzuki, Toshi-kazu;
12:38:25 Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4824474 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Taoka, Noriyuki;Yokoyama, Masafumi;Kim, Sang Hyeon;Suzuki, Rena;Lee, Sunghoon;Iida, Ryo;Hoshii, Takuya;Jevasuwan, Wipakorn;Maeda, Tatsuro;Yasuda, Tetsuji;Ichikawa, Osamu;Fukuhara, Noboru;Hata, Masahiko;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:26 Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
DOI:10.1063/1.4869221 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kim, SangHyeon;Yokoyama, Masafumi;Ikku, Yuki;Nakane, Ryosho;Ichikawa, Osamu;Osada, Takenori;Hata, Masahiko;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:27 Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
DOI:10.1063/1.3524569 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Zhang, Yan;Fischetti, M. V.;Soree, B.;O'Regan, T.;
12:38:28 Effect of reduced dimensionality on the optical band gap of SrTiO3
DOI:10.1063/1.4798241 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Lee, Che-Hui;Podraza, Nikolas J.;Zhu, Ye;Berger, Robert F.;Shen, Shaoping;Sestak, Michelle;Collins, Robert W.;Kourkoutis, Lena F.;Mundy, Julia A.;Wang, Huiqiong;Mao, Qingyun;Xi, Xiaoxing;Brillson, Leonard J.;Neaton, Jeffrey B.;Muller, David A.;Schlom, Darrell G.;
12:38:29 Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.3668120 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Iida, Ryo;Kim, Sang-Hyeon;Yokoyama, Masafumi;Taoka, Noriyuki;Lee, Sang-Hoon;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:30 Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
DOI:10.1063/1.4812563 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zeng, Yuping;Kuo, Chien-I;Kapadia, Rehan;Hsu, Ching-Yi;Javey, Ali;Hu, Chenming;
12:38:31 Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
DOI:10.1063/1.3459137 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Takita, Hayato;Hashimoto, Norihiko;Nguyen, Cong Thanh;Kudo, Masahiro;Akabori, Masashi;Suzukia, Toshi-kazu;
12:38:32 Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments
DOI:10.1063/1.3436561 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Nainani, Aneesh;Yum, Jung;Barnett, Joel;Hill, Richard;Goel, Niti;Huang, Jeff;Majhi, Prashant;Jammy, Raj;Saraswat, Krishna C.;
12:38:33 Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain
DOI:10.1063/1.4714770 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Kim, SangHyeon;Yokoyama, Masafumi;Taoka, Noriyuki;Nakane, Ryosho;Yasuda, Tetsuji;Ichikawa, Osamu;Fukuhara, Noboru;Hata, Masahiko;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:34 Interband transitions and dielectric functions of InGaSb alloys
DOI:10.1063/1.4795622 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kim, T. J.;Yoon, J. J.;Byun, J. S.;Hwang, S. Y.;Aspnes, D. E.;Shin, S. H.;Song, J. D.;Liang, C. -T.;Chang, Y. -C.;Barange, N. S.;Kim, J. Y.;Kim, Y. D.;
12:38:35 AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.02.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Rojas-Ramirez, J. S.;Wang, S.;Contreras-Guerrero, R.;Caro, M.;Bhatnagar, K.;Holland, M.;Oxland, R.;Doornbos, G.;Passlack, M.;Diaz, C. H.;Droopad, R.;
12:38:36 Generation of substrate-free III-V nanodisks from user-defined multilayer nanopillar arrays for integration on Si
DOI:10.1088/0957-4484/24/22/225301 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Naureen, S.;Shahid, N.;Dev, A.;Anand, S.;
12:38:37 Unraveling the Influence of Lanthanide Ions on Intra- and Inter-Molecular Electronic Processes in Fe(10)Ln(10) Nano-Toruses
DOI:10.1002/adfm.201400336 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:1 AU: Baniodeh, Amer;Liang, Yu;Anson, Christopher E.;Magnani, Nicola;Powell, Annie K.;Unterreiner, Andreas-Neil;Seyfferle, Simon;Slota, Michael;Dressel, Martin;Bogani, Lapo;Goss, Karin;
12:38:38 Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors
DOI:10.1063/1.3528334 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Urabe, Yuji;Yokoyama, Masafumi;Takagi, Hideki;Yasuda, Tetsuji;Miyata, Noriyuki;Yamada, Hisashi;Fukuhara, Noboru;Hata, Masahiko;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:39 Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions
DOI:10.1063/1.4811787 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Shi, J.;Wichmann, N.;Roelens, Y.;Bollaert, S.;
12:38:40 Impact of < 110 > uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors (vol 95, 243504, 2009)
DOI:10.1063/1.3460276 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Xia, Ling;del Alamo, Jesus A.;
12:38:41 The effects of wet surface clean and in situ interlayer on In-0.52Al0.48As metal-oxide-semiconductor characteristics
DOI:10.1063/1.3379024 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Kobayashi, Masaharu;Thareja, Gaurav;Sun, Yun;Goel, Niti;Garner, Mike;Tsai, Wilman;Pianetta, Piero;Nishi, Yoshio;
12:38:42 Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors
DOI:10.1063/1.4891493 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kim, SangHyeon;Ikku, Yuki;Yokoyama, Masafumi;Nakane, Ryosho;Li, Jian;Kao, Yung-Chung;Takenaka, Mitsuru;Takagi, Shinichi;
12:38:43 The rise of the laser
DOI:10.1038/nmat2757 JN:NATURE MATERIALS PY:2010
TC:1 AU: Heber, Joerg;Kroemer, Herbert;
12:39:1 Band-Offset Driven Efficiency of the Doping of SiGe Core-Shell Nanowires
DOI:10.1021/nl103621s JN:NANO LETTERS PY:2011
TC:36 AU: Amato, Michele;Ossicini, Stefano;Rurali, Riccardo;
12:39:2 Electronic properties of strained Si/Ge core-shell nanowires
DOI:10.1063/1.3389495 JN:APPLIED PHYSICS LETTERS PY:2010
TC:37 AU: Peng, Xihong;Logan, Paul;
12:39:3 Surface Disordered Ge-Si Core-Shell Nanowires as Efficient Thermoelectric Materials
DOI:10.1021/nl302061f JN:NANO LETTERS PY:2012
TC:18 AU: Markussen, Troels;
12:39:4 Engineered core-shell Si1-xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction
DOI:10.1063/1.4813097 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Aouassa, M.;Ronda, A.;Favre, L.;Delobbe, A.;Sudraud, P.;Berbezier, I.;
12:39:5 Genomic Design of Strong Direct-Gap Optical Transition in Si/Ge Core/Multishell Nanowires
DOI:10.1021/nl2040892 JN:NANO LETTERS PY:2012
TC:19 AU: Zhang, Lijun;d'Avezac, Mayeul;Luo, Jun-Wei;Zunger, Alex;
12:39:6 Direct Detection of Hole Gas in Ge-Si Core-Shell Nanowires by Enhanced Raman Scattering
DOI:10.1021/nl102316b JN:NANO LETTERS PY:2010
TC:19 AU: Zhang, Shixiong;Lopez, Francisco J.;Hyun, Jerome K.;Lauhon, Lincoln J.;
12:39:7 Defects Responsible for the Hole Gas in Ge/Si Core-Shell Nanowires
DOI:10.1021/nl9029972 JN:NANO LETTERS PY:2010
TC:29 AU: Park, Ji-Sang;Ryu, Byungki;Moon, Chang-Youn;Chang, K. J.;
12:39:8 Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells
DOI:10.1021/nl1031138 JN:NANO LETTERS PY:2011
TC:16 AU: Zhao, Yanjie;Smith, Joshua T.;Appenzeller, Joerg;Yang, Chen;
12:39:9 Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects
DOI:10.1103/PhysRevB.82.073305 JN:PHYSICAL REVIEW B PY:2010
TC:16 AU: Palummo, Maurizia;Amato, Michele;Ossicini, Stefano;
12:39:10 Observation of Hole Accumulation in Ge/Si Core/Shell Nanowires Using off-Axis Electron Holography
DOI:10.1021/nl1033107 JN:NANO LETTERS PY:2011
TC:21 AU: Li, Luying;Smith, David J.;Dailey, Eric;Madras, Prashanth;Drucker, Jeff;McCartney, Martha R.;
12:39:11 Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core-Shell Nanowires
DOI:10.1021/nn302881w JN:ACS NANO PY:2012
TC:12 AU: Fukata, Naoki;Mitome, Masanori;Sekiguchi, Takashi;Bando, Yoshio;Kirkham, Melanie;Hong, Jung-Il;Wang, Zhong Lin;Snydert, Robert L.;
12:39:12 Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport
DOI:10.1063/1.3574537 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Dayeh, S. A.;Gin, A. V.;Picraux, S. T.;
12:39:13 Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core-Shell Nanowires
DOI:10.1021/nl101109p JN:NANO LETTERS PY:2010
TC:19 AU: Lee, Hyungjun;Choi, Hyoung Joon;
12:39:14 Strain engineering of band offsets in Si/Ge core-shell nanowires
DOI:10.1063/1.3561773 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Huang, Shouting;Yang, Li;
12:39:15 Selective growth and ordering of SiGe nanowires for band gap engineering
DOI:10.1088/0957-4484/25/33/335303 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Benkouider, A.;Ronda, A.;Gouye, A.;Herrier, C.;Favre, L.;Lockwood, D. J.;Rowell, N. L.;Delobbe, A.;Sudraud, P.;Berbezier, I.;
12:39:16 Unveiling Stable Group IV Alloy Nanowires via a Comprehensive Search and Their Electronic Band Characteristics
DOI:10.1021/nl402987c JN:NANO LETTERS PY:2013
TC:3 AU: Ng, Man-Fai;Tan, Teck L.;
12:39:17 Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nanowire Field Effect Transistors
DOI:10.1021/nl4037559 JN:NANO LETTERS PY:2014
TC:6 AU: Binh-Minh Nguyen;Taur, Yuan;Picraux, S. Tom;Dayeh, Shadi A.;
12:39:18 Intrinsic and external strains modulated electronic properties of GaN/InN core/shell nanowires
DOI:10.1063/1.3630122 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Xiao, M. X.;Zhao, M.;Jiang, Q.;
12:39:19 Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization
DOI:10.1063/1.4794991 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Long, Ethan;Galeckas, Augustinas;Kuznetsov, Andrej Yu;Ronda, Antoine;Favre, Luc;Berbezier, Isabelle;Radamson, Henry H.;
12:39:20 Role of Confinement on Carrier Transport in Ge-SixGe1-x Core-Shell Nanowires
DOI:10.1021/nl2030695 JN:NANO LETTERS PY:2012
TC:15 AU: Nah, Junghyo;Dillen, David C.;Varahramyan, Kamran M.;Banerjee, Sanjay K.;Tutuc, Emanuel;
12:39:21 Structural and electronic properties of Si1-xGex alloy nanowires
DOI:10.1063/1.4898130 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Iori, Federico;Ossicini, Stefano;Rurali, Riccardo;
12:39:22 Role of vacancies to p-type semiconducting properties of SiGe nanowires
DOI:10.1039/c4tc00958d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Zhou, Rulong;Qu, Bingyan;Zhang, Bo;Lib, Pengfei;Zeng, Xiao Cheng;
12:39:23 Optical absorption modulation by selective codoping of SiGe core-shell nanowires
DOI:10.1063/1.4768475 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Amato, Michele;Palummo, Maurizia;Rurali, Riccardo;Ossicini, Stefano;
12:39:24 Band structure analysis in SiGe nanowires
DOI:10.1016/j.mseb.2011.10.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Amato, Michele;Palummo, Maurizia;Ossicini, Stefano;
12:39:25 Convergence of quasiparticle band structures of Si and Ge nanowires in the GW approximation and the validity of scissor shifts
DOI:10.1103/PhysRevB.83.045306 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Peelaers, H.;Partoens, B.;Giantomassi, M.;Rangel, T.;Goossens, E.;Rignanese, G. -M.;Gonze, X.;Peeters, F. M.;
12:39:26 Reinterpretation of the Expected Electronic Density of States of Semiconductor Nanowires
DOI:10.1021/nl5030062 JN:NANO LETTERS PY:2015
TC:0 AU: Wang, Jianping;Luo, Jun-Wei;Zhang, Lijun;Zunger, Alex;
12:39:27 Giant excitonic exchange splitting in Si nanowires: First-principles calculations
DOI:10.1103/PhysRevB.81.121303 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Palummo, Maurizia;Iori, Federico;Del Sole, Rodolfo;Ossicini, Stefano;
12:39:28 Raman scattering from Ge-Si core-shell nanowires: Validity of analytical strain models
DOI:10.1063/1.3667125 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Singh, Rachna;Dailey, Eric J.;Drucker, Jeff;Menendez, Jose;
12:39:29 Electronic and dynamical properties of Si/Ge core-shell nanowires
DOI:10.1103/PhysRevB.82.113411 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Peelaers, H.;Partoens, B.;Peeters, F. M.;
12:39:30 Excitons and excitonic fine structures in Si nanowires: Prediction of an electronic state crossover with diameter changes
DOI:10.1103/PhysRevB.84.075404 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Zhang, Lijun;Luo, Jun-Wei;Franceschetti, Alberto;Zunger, Alex;
12:39:31 Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate
DOI:10.1063/1.4811365 JN:AIP ADVANCES PY:2013
TC:0 AU: Sangeetha, P.;Jeganathan, K.;Ramakrishnan, V.;
12:39:32 Strain and Hole Gas Induced Raman Shifts in Ge-SixGe1-x Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy
DOI:10.1021/acs.nanolett.5b00176 JN:NANO LETTERS PY:2015
TC:0 AU: Zhang, Zhongjian;Dillen, David C.;Tutuc, Emanuel;Yu, Edward T.;
12:39:33 Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation scheme
DOI:10.1063/1.4775839 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Sant, Saurabh;Lodha, Saurabh;Ganguly, Udayan;Mahapatra, Souvik;Heinz, Frederik O.;Smith, Lee;Moroz, Victor;Ganguly, Swaroop;
12:39:34 Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications
DOI:10.1088/0957-4484/22/32/325703 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Nozaki, D.;Kunstmann, J.;Zoergiebel, F.;Weber, W. M.;Mikolajick, T.;Cuniberti, G.;
12:39:35 Using silicon nanowire devices to detect adenosine triphosphate liberated from electrically stimulated HeLa cells
DOI:10.1016/j.bios.2010.10.003 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:6 AU: Chen, C. C.;Chen, Y-Z;Huang, Y-J;Sheu, J-T;
12:40:1 Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films
DOI:10.1002/adma.201102407 JN:ADVANCED MATERIALS PY:2011
TC:57 AU: Lee, Chul-Ho;Kim, Yong-Jin;Hong, Young Joon;Jeon, Seong-Ran;Bae, Sukang;Hong, Byung Hee;Yi, Gyu-Chul;
12:40:2 Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
DOI:10.1021/nl3018115 JN:NANO LETTERS PY:2012
TC:47 AU: Munshi, A. Mazid;Dheeraj, Dasa L.;Fauske, Vidar T.;Kim, Dong-Chul;van Helvoort, Antonius T. J.;Fimland, Bjorn-Ove;Weman, Helge;
12:40:3 van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
DOI:10.1021/nl204109t JN:NANO LETTERS PY:2012
TC:25 AU: Hong, Young Joon;Lee, Wi Hyoung;Wu, Yaping;Ruoff, Rodney S.;Fukui, Takashi;
12:40:4 InxGa1-xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
DOI:10.1021/nl304569d JN:NANO LETTERS PY:2013
TC:24 AU: Mohseni, Parsian K.;Behnam, Ashkan;Wood, Joshua D.;English, Christopher D.;Lyding, Joseph W.;Pop, Eric;Li, Xiuling;
12:40:5 Van der Waals Epitaxy and Photoresponse of Hexagonal Tellurium Nanoplates on Flexible Mica Sheets
DOI:10.1021/nn5028104 JN:ACS NANO PY:2014
TC:11 AU: Wang, Qisheng;Safdar, Muhammad;Xu, Kai;Mirza, Misbah;Wang, Zhenxing;He, Jun;
12:40:6 Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
DOI:10.1021/nn2025786 JN:ACS NANO PY:2011
TC:19 AU: Hong, Young Joon;Fukui, Takashi;
12:40:7 Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
DOI:10.1002/adma.201302312 JN:ADVANCED MATERIALS PY:2013
TC:9 AU: Hong, Young Joon;Yang, Jae Won;Lee, Wi Hyoung;Ruoff, Rodney S.;Kim, Kwang S.;Fukui, Takashi;
12:40:8 Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
DOI:10.1038/am.2014.108 JN:NPG Asia Materials PY:2014
TC:1 AU: Oh, Hongseok;Hong, Young Joon;Kim, Kun-Su;Yoon, Sangmoon;Baek, Hyeonjun;Kang, Seoung-Hun;Kwon, Young-Kyun;Kim, Miyoung;Yi, Gyu-Chul;
12:40:9 Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy
DOI:10.1002/adma.201305909 JN:ADVANCED MATERIALS PY:2014
TC:11 AU: Mohseni, Parsian K.;Behnam, Ashkan;Wood, Joshua D.;Zhao, Xiang;Yu, Ki Jun;Wang, Ning C.;Rockett, Angus;Rogers, John A.;Lyding, Joseph W.;Pop, Eric;Li, Xiuling;
12:40:10 Au-Seeded Growth of Vertical and in-Plane III-V Nanowires on Graphite Substrates
DOI:10.1021/nl403411w JN:NANO LETTERS PY:2014
TC:5 AU: Wallentin, Jesper;Kriegner, Dominik;Stangl, Julian;Borgstrom, Magnus T.;
12:40:11 Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
DOI:10.1002/adfm.201400960 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Alaskar, Yazeed;Arafin, Shamsul;Wickramaratne, Darshana;Zurbuchen, Mark A.;He, Liang;McKay, Jeff;Lin, Qiyin;Goorsky, Mark S.;Lake, Roger K.;Wang, Kang L.;
12:40:12 Position- and Morphology-Controlled ZnO Nanostructures Grown on Graphene Layers
DOI:10.1002/adma.201201966 JN:ADVANCED MATERIALS PY:2012
TC:20 AU: Kim, Yong-Jin;Yoo, Hyobin;Lee, Chul-Ho;Park, Jun Beom;Baek, Hyeonjun;Kim, Miyoung;Yi, Gyu-Chul;
12:40:13 Graphene mediated growth of polycrystalline indium phosphide nanowires and monocrystalline-core, polycrystalline-shell silicon nanowires on copper
DOI:10.1016/j.jcrysgro.2014.08.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Norris, Kate J.;Garrett, Matthew;Coleman, Elane;Tompa, Gary S.;Zhang, Junce;Kobayashi, Nobuhiko P.;
12:40:14 Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands
DOI:10.1021/nn304007x JN:ACS NANO PY:2013
TC:5 AU: Lee, Dong Hyun;Yi, Jaeseok;Lee, Jung Min;Lee, Sang Jun;Doh, Yong-Joo;Jeong, Hu Young;Lee, Zonghoon;Paik, Ungyu;Rogers, John A.;Il Park, Won;
12:40:15 Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods
DOI:10.1063/1.4902373 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Baek, Hyeonjun;Hyun, Jerome K.;Chung, Kunook;Oh, Hongseok;Yi, Gyu-Chul;
12:40:16 Controlled growth of inorganic nanorod arrays using graphene nanodot seed layers
DOI:10.1088/0957-4484/25/13/135609 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Kim, Yong-Jin;Kim, Sung-Soo;Park, Jun Beom;Sohn, Byeong-Hyeok;Yi, Gyu-Chul;
12:40:17 High-Resolution Observation of Nucleation and Growth Behavior of Nanomaterials Using a Graphene Template
DOI:10.1002/adma.201304720 JN:ADVANCED MATERIALS PY:2014
TC:1 AU: Jo, Janghyun;Yoo, Hyobin;Park, Suk-In;Park, Jun Beom;Yoon, Sangmoon;Kim, Miyoung;Yi, Gyu-Chul;
12:40:18 Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes
DOI:10.1063/1.4894780 JN:APL MATERIALS PY:2014
TC:3 AU: Chung, Kunook;Beak, Hyeonjun;Tchoe, Youngbin;Oh, Hongseok;Yoo, Hyobin;Kim, Miyoung;Yi, Gyu-Chul;
12:40:19 Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
DOI:10.1016/j.jcrysgro.2015.02.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Alaskar, Yazeed;Arafin, Shamsul;Lin, Qiyin;Wickramaratne, Darshana;McKay, Jeff;Norman, Andrew G.;Zhang, Zhi;Yao, Luchi;Ding, Feng;Zou, Jin;Goorsky, Mark S.;Lake, Roger K.;Zurbuchen, Mark A.;Wang, Kang L.;
12:40:20 Growth of Vertical GaAs Nanowires on an Amorphous Substrate via a Fiber-Textured Si Platform
DOI:10.1021/nl400924c JN:NANO LETTERS PY:2013
TC:11 AU: Cohin, Yann;Mauguin, Olivia;Largeau, Ludovic;Patriarche, Gilles;Glas, Frank;Sondergard, Elin;Harmand, Jean-Christophe;
12:40:21 Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays
DOI:10.1002/adma.201305684 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Tchoe, Youngbin;Jo, Janghyun;Kim, Miyoung;Heo, Jaehyuk;Yoo, Geonwook;Sone, Cheolsoo;Yi, Gyu-Chul;
12:40:22 Epitaxial GaN Microdisk Lasers Grown on Graphene Microdots
DOI:10.1021/nl401011x JN:NANO LETTERS PY:2013
TC:13 AU: Baek, Hyeonjun;Lee, Chul-Ho;Chung, Kunook;Yi, Gyu-Chul;
12:40:23 AC surface photovoltage of indium phosphide nanowire networks
DOI:10.1007/s00339-012-6810-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Lohn, Andrew J.;Kobayashi, Nobuhiko P.;
12:40:24 A reconstruction of cubic rs-ZnO on MgO (200) substrate through (100) plane of w-ZnO:rs-ZnO for transparent electronic application
DOI:10.1063/1.3680556 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Bobade, Santosh M.;
12:40:25 Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer
DOI:10.1016/j.jcrysgro.2010.08.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Lohn, Andrew J.;Li, Xuema;Kobayashi, Nobuhiko P.;
12:40:26 Controlled growth of vertical ZnO nanowires on copper substrate
DOI:10.1063/1.4793758 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Tam-Triet Ngo-Duc;Gacusan, Jovi;Kobayashi, Nobuhiko P.;Sanghadasa, Mohan;Meyyappan, M.;Oye, Michael M.;
12:40:27 Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments
DOI:10.1016/j.apsusc.2010.12.083 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Yuk, J. M.;Lee, J. Y.;Lee, Zonghoon;No, Y. S.;Kim, T. W.;Kim, J. Y.;Choi, W. K.;
12:40:28 Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates
DOI:10.1016/j.jcrysgro.2013.10.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Norris, Kate J.;Zhang, Junce;Fryauf, David M.;Gibson, Gary A.;Barcelo, Steven J.;Kobayashi, Nobuhiko P.;
12:40:29 Relativistic electron energy loss spectroscopy of solid and core-shell nanowires
DOI:10.1103/PhysRevB.81.165403 JN:PHYSICAL REVIEW B PY:2010
TC:0 AU: Hyun, J. K.;Levendorf, M. P.;Blood-Forsythe, M.;Park, J.;Muller, D. A.;
12:40:30 A reconstruction of cubic rs-ZnO on MgO (200) substrate through (100) plane of w-ZnO:rs-ZnO for transparent electronic application (vol 100, 072102, 2012)
DOI:10.1063/1.4768694 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Bobade, Santosh M.;Choo, Seong-Min;Lee, Kyujoon;Park, Sungmin;Park, Gwangseo;Shin, Kyungho;Jung, Myung-Hwa;
12:41:1 Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
DOI:10.1103/PhysRevB.84.195105 JN:PHYSICAL REVIEW B PY:2011
TC:24 AU: de Carvalho, Luiz Claudio;Schleife, Andre;Bechstedt, Friedhelm;
12:41:2 Ab initio description of quasiparticle band structures and optical near-edge absorption of transparent conducting oxides
DOI:10.1557/jmr.2012.147 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:6 AU: Schleife, Andre;Bechstedt, Friedhelm;
12:41:3 Tin dioxide from first principles: Quasiparticle electronic states and optical properties
DOI:10.1103/PhysRevB.83.035116 JN:PHYSICAL REVIEW B PY:2011
TC:43 AU: Schleife, A.;Varley, J. B.;Fuchs, F.;Roedl, C.;Bechstedt, F.;Rinke, P.;Janotti, A.;Van de Walle, C. G.;
12:41:4 Structural, electrical, and optical properties of hydrogen-doped ZnO films
DOI:10.1103/PhysRevB.86.115334 JN:PHYSICAL REVIEW B PY:2012
TC:14 AU: Kronenberger, Achim;Polity, Angelika;Hofmann, Detlev M.;Meyer, Bruno K.;Schleife, Andre;Bechstedt, Friedhelm;
12:41:5 Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
DOI:10.1103/PhysRevB.84.125108 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Belabbes, A.;de Carvalho, L. C.;Schleife, A.;Bechstedt, F.;
12:41:6 Distribution of cations in wurtzitic InxGa1-xN and InxAl1-xN alloys: Consequences for energetics and quasiparticle electronic structures
DOI:10.1103/PhysRevB.85.115121 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: de Carvalho, Luiz Claudio;Schleife, Andre;Furthmueller, Juergen;Bechstedt, Friedhelm;
12:41:7 Free-carrier absorption in nitrides from first principles
DOI:10.1103/PhysRevB.81.241201 JN:PHYSICAL REVIEW B PY:2010
TC:30 AU: Kioupakis, Emmanouil;Rinke, Patrick;Schleife, Andre;Bechstedt, Friedhelm;Van de Walle, Chris G.;
12:41:8 GW calculations on post-transition-metal oxides
DOI:10.1103/PhysRevB.89.165130 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Kang, Youngho;Kang, Gijae;Nahm, Ho-Hyun;Cho, Seong-Ho;Park, Young Soo;Han, Seungwu;
12:41:9 Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches
DOI:10.1103/PhysRevB.85.035305 JN:PHYSICAL REVIEW B PY:2012
TC:14 AU: Hoeffling, B.;Schleife, A.;Roedl, C.;Bechstedt, F.;
12:41:10 Band lineup between silicon and transparent conducting oxides
DOI:10.1063/1.3464562 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Hoeffling, B.;Schleife, A.;Fuchs, F.;Roedl, C.;Bechstedt, F.;
12:41:11 Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
DOI:10.1103/PhysRevB.84.075218 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Riefer, A.;Fuchs, F.;Roedl, C.;Schleife, A.;Bechstedt, F.;Goldhahn, R.;
12:41:12 Valence-band splittings in cubic and hexagonal AlN, GaN, and InN
DOI:10.1063/1.3524234 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: de Carvalho, Luiz Claudio;Schleife, Andre;Fuchs, Frank;Bechstedt, Friedhelm;
12:41:13 Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO2
DOI:10.1103/PhysRevB.86.075320 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Kuefner, Sebastian;Schleife, Andre;Hoeffling, Benjamin;Bechstedt, Friedhelm;
12:41:14 Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2
DOI:10.1063/1.3671162 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Peelaers, H.;Kioupakis, E.;Van de Walle, C. G.;
12:41:15 High pressure phase transitions in SnO2 polymorphs by first-principles calculations
DOI:10.1016/j.jallcom.2013.10.238 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Erdem, I.;Kart, H. H.;Cagin, T.;
12:41:16 Density functional theory study of tin and titanium dioxides: Structural and mechanical properties in the tetragonal rutile phase
DOI:10.1016/j.mssp.2014.05.037 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Erdemn, I.;Kart, H. H.;
12:41:17 Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN, and AlGaN alloys
DOI:10.1063/1.4796093 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Mourad, Daniel;
12:41:18 Comparative study of rutile and anatase SnO2 and TiO2: Band-edge structures, dielectric functions, and polaron effects
DOI:10.1063/1.4793273 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Dou, Maofeng;Persson, Clas;
12:41:19 Computed electronic and optical properties of SnO2 under compressive stress
DOI:10.1016/j.optmat.2014.10.017 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Miglio, A.;Saniz, R.;Waroquiers, D.;Stankovski, M.;Giantomassi, M.;Hautier, G.;Rignanese, G. -M.;Gonze, X.;
12:41:20 Determination of valence-band offset at cubic CdSe/ZnTe type-II heterojunctions: A combined experimental and theoretical approach
DOI:10.1103/PhysRevB.86.195308 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Mourad, Daniel;Richters, Jan-Peter;Gerard, Lionel;Andre, Regis;Bleuse, Joel;Mariette, Henri;
12:41:21 Ab initio calculation of optical properties with excitonic effects in wurtzite InxGa1-xN and InxAl1-xN alloys
DOI:10.1103/PhysRevB.87.195211 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: de Carvalho, Luiz Claudio;Schleife, Andre;Furthmueller, Juergen;Bechstedt, Friedhelm;
12:41:22 Quasiparticle energies and uniaxial pressure effects on the properties of SnO2
DOI:10.1063/1.3532109 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Saniz, R.;Dixit, H.;Lamoen, D.;Partoens, B.;
12:41:23 In4d and Ga3d levels in InxX1-xN (X = Ga, Al) alloys
DOI:10.1063/1.4803666 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: de Carvalho, Luiz Claudio;Furthmueller, Juergen;Bechstedt, Friedhelm;
12:41:24 First-principles investigations on structural, elastic and electronic properties of SnO2 under pressure
DOI:10.1016/j.commatsci.2010.12.018 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2011
TC:19 AU: Liu, Chun-Mei;Chen, Xiang-Rong;Ji, Guang-Fu;
12:41:25 First-principles calculations of structural, electronic and optical properties of tetragonal SnO2 and SnO
DOI:10.1016/j.commatsci.2009.11.038 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:24 AU: Liu, Qi-Jun;Liu, Zheng-Tang;Feng, Li-Ping;
12:41:26 Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
DOI:10.1063/1.4882237 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Feneberg, Martin;Lidig, Christian;Lange, Karsten;Goldhahn, Ruediger;Neumann, Maciej D.;Esser, Norbert;Bierwagen, Oliver;White, Mark E.;Tsai, Min Y.;Speck, James S.;
12:41:27 Theoretical calculations of the high-pressure phases of SnO2
DOI:10.1016/j.commatsci.2013.02.011 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:6 AU: Hassan, F. El Haj;Moussawi, S.;Noun, W.;Salameh, C.;Postnikov, A. V.;
12:41:28 2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response
DOI:10.1103/PhysRevB.85.165202 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Riefer, A.;Rauls, E.;Schmidt, W. G.;Eberhard, J.;Stoll, I.;Mattay, J.;
12:41:29 Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
DOI:10.1063/1.4793279 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Fan, W. J.;
12:41:30 Determination of valence-band offset at cubic CdSe/ZnTe type-II heterojunctions: A combined experimental and theoretical approach (vol 86, 195308, 2012)
DOI:10.1103/PhysRevB.86.199902 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Mourad, Daniel;Richters, Jan-Peter;Gerard, Lionel;Andre, Regis;Bleuse, Joel;Mariette, Henri;
12:41:31 2-Aminopyrimidine-Silyer(I) Based Hybrid Organic Polymers: Self-Assembly and Phase Transitions of a Novel Class of Electronic Material
DOI:10.1021/cm101193g JN:CHEMISTRY OF MATERIALS PY:2010
TC:18 AU: Stoll, Ion;Brockhinke, Regina;Brockhinke, Andreas;Boettcher, Markus;Koop, Thomas;Stammler, Hans-Georg;Neumann, Beate;Niemeyer, Andrea;Huetten, Andreas;Mattay, Jochen;
12:42:1 A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
DOI:10.1039/c3tc30556b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:10 AU: de la Mata, Maria;Zhou, Xiang;Furtmayr, Florian;Teubert, Joerg;Gradecak, Silvija;Eickhoff, Martin;Fontcuberta i Morral, Anna;Arbiol, Jordi;
12:42:2 InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires
DOI:10.1021/nn101604k JN:ACS NANO PY:2010
TC:51 AU: Uccelli, Emanuele;Arbiol, Jordi;Ramon Morante, Joan;Fontcuberta i Morral, Anna;
12:42:3 Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers
DOI:10.1021/nl902842g JN:NANO LETTERS PY:2010
TC:40 AU: Huang, Hui;Ren, Xiaomin;Ye, Xian;Guo, Jingwei;Wang, Qi;Yang, Yisu;Cai, Shiwei;Huang, Yongqing;
12:42:4 Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition
DOI:10.1021/nl202190n JN:NANO LETTERS PY:2011
TC:17 AU: Yan, Xin;Zhang, Xia;Ren, Xiaomin;Huang, Hui;Guo, Jingwei;Guo, Xin;Liu, Minjia;Wang, Qi;Cai, Shiwei;Huang, Yongqing;
12:42:5 InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
DOI:10.1063/1.3646386 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Kawaguchi, Kenichi;Heurlin, Magnus;Lindgren, David;Borgstrom, Magnus T.;Ek, Martin;Samuelson, Lars;
12:42:6 Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers
DOI:10.1016/j.jcrysgro.2012.07.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Guo, Jingwei;Huang, Hui;Ding, Yizheng;Ji, Zhuoyu;Liu, Ming;Ren, Xiaomin;Zhang, Xia;Huang, Yongqing;
12:42:7 Growth and photoluminescence of InxGa1-xAs quantum dots on the surface of GaAs nanowires by metal organic chemical vapor deposition
DOI:10.1063/1.4734391 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Yan, Xin;Zhang, Xia;Ren, Xiaomin;Li, Junshuai;Lv, Xiaolong;Wang, Qi;Huang, Yongqing;
12:42:8 Realization of Stranski-Krastanow InAs quantum dots on nanowire-based InGaAs nanoshells
DOI:10.1039/c3tc31758g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Yan, Xin;Zhang, Xia;Ren, Xiaomin;Li, Junshuai;Cui, Jiangong;Li, Liang;Wang, Sijia;Wang, Qi;Huang, Yongqing;
12:42:9 Novel growth and properties of GaAs nanowires on Si substrates
DOI:10.1088/0957-4484/21/3/035604 JN:NANOTECHNOLOGY PY:2010
TC:19 AU: Kang, J. H.;Gao, Q.;Joyce, H. J.;Tan, H. H.;Jagadish, C.;Kim, Y.;Choi, D. Y.;Guo, Y.;Xu, H.;Zou, J.;Fickenscher, M. A.;Smith, L. M.;Jackson, H. E.;Yarrison-Rice, J. M.;
12:42:10 Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires
DOI:10.1021/nl204204f JN:NANO LETTERS PY:2012
TC:15 AU: Yan, Xin;Zhang, Xia;Ren, Xiaomin;Lv, Xiaolong;Li, Junshuai;Wang, Qi;Cai, Shiwei;Huang, Yongqing;
12:42:11 Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires
DOI:10.1063/1.4903321 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yan, Xin;Zhang, Xia;Li, Junshuai;Cui, Jiangong;Ren, Xiaomin;
12:42:12 Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion
DOI:10.1016/j.jcrysgro.2013.09.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Yan, Xin;Zhang, Xia;Li, Junshuai;Cui, Jiangong;Wang, Qi;Huang, Yongqing;Ren, Xiaomin;
12:42:13 Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure
DOI:10.1116/1.4818509 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Yan, Xin;Zhang, Xia;Li, Junshuai;Cui, Jiangong;Wang, Sijia;Fan, Shuyu;Huang, Yongqing;Ren, Xiaomin;
12:42:14 Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires
DOI:10.1088/0957-4484/24/22/225203 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Lindgren, David;Kawaguchi, Kenichi;Heurlin, Magnus;Borgstrom, Magnus T.;Pistol, Mats-Erik;Samuelson, Lars;Gustafsson, Anders;
12:42:15 Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
DOI:10.1021/nl304157d JN:NANO LETTERS PY:2013
TC:10 AU: Yu, Ying;Li, Mi-Feng;He, Ji-Fang;He, Yu-Ming;Wei, Yu-Jia;He, Yu;Zha, Guo-Wei;Shang, Xiang-Jun;Wang, Juan;Wang, Li-Juan;Wang, Guo-Wei;Ni, Hai-Qiao;Lu, Chao-Yang;Niu, Zhi-Chuan;
12:42:16 Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion
DOI:10.1088/0957-4484/21/47/475602 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Huang, Hui;Ren, Xiaomin;Ye, Xian;Guo, Jingwei;Wang, Qi;Zhang, Xia;Cai, Shiwei;Huang, Yongqing;
12:42:17 Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation
DOI:10.1021/nl4031192 JN:NANO LETTERS PY:2013
TC:1 AU: Wallentin, Jesper;Ek, Martin;Vainorious, Neimantas;Mergenthaler, Kilian;Samuelson, Lars;Pistol, Mats-Erik;Wallenberg, L. Reine;Borgstrom, Magnus T.;
12:42:18 Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage
DOI:10.1063/1.4826612 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yan, Xin;Zhang, Xia;Ren, Xiaomin;Li, Junshuai;Cui, Jiangong;Wang, Sijia;Fan, Shuyu;Wang, Qi;Huang, Yongqing;
12:42:19 Morphological control of GaAs/InAs radial heterostructure nanowires: From cylindrical to coherent quantum dot structure
DOI:10.1063/1.4795503 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Guo, Jingwei;Huang, Hui;Zhang, Jianwei;Li, Xiaogan;Huang, Yongqing;Ren, Xiaomin;Ji, Zhuoyu;Liu, Ming;
12:42:20 Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
DOI:10.1088/0957-4484/23/41/415702 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Kang, J. H.;Gao, Q.;Parkinson, P.;Joyce, H. J.;Tan, H. H.;Kim, Y.;Guo, Y.;Xu, H.;Zou, J.;Jagadish, C.;
12:42:21 Morphological Evolution and Ordered Quantum Structure Formation in Heteroepitaxial Core-Shell Nanowires
DOI:10.1021/nn101218r JN:ACS NANO PY:2010
TC:12 AU: Guo, Jun-Yan;Zhang, Yong-Wei;Shenoy, Vivek B.;
12:42:22 GaAs buffer layer technique for vertical nanowire growth on Si substrate
DOI:10.1063/1.4866915 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xu, Xiaoqing;Li, Yang;Parizi, Kokab B.;Huo, Yijie;Kang, Yangsen;Wong, H. -S. Philip;
12:42:23 Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs-AlGaAs core-shell nanowires grown on a pre-patterned Si (111) substrate
DOI:10.1016/j.jcrysgro.2010.10.152 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Bailon-Somintac, Michelle F.;Ibanez, Jasher J.;Jaculbia, Rafael B.;Loberternos, Regine A.;Defensor, Michael J.;Salvador, Arnel A.;Somintac, Armando S.;
12:42:24 Modification of Stranski-Krastanov growth on the surface of nanowires
DOI:10.1088/0957-4484/25/43/435605 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Li, Xinlei;Yang, Guowei;
12:42:25 Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature
DOI:10.1116/1.3573985 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Guo, Jingwei;Huang, Hui;Ren, Xiaomin;Yan, Xin;Cai, Shiwei;Wang, Wei;Wang, Qi;Huang, Yongqing;Zhang, Xia;
12:42:26 Self-Assembly of Ordered Epitaxial Nanostructures on Polygonal Nanowires
DOI:10.1021/nl3040543 JN:NANO LETTERS PY:2013
TC:6 AU: Lu, Liang-Xing;Bharathi, M. S.;Zhang, Yong-Wei;
12:42:27 Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison
DOI:10.1016/j.jcrysgro.2010.11.071 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Breuer, Steffen;Hilse, Maria;Geelhaar, Lutz;Riechert, Henning;
12:42:28 Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates
DOI:10.1088/0957-4484/23/2/025601 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Mohan, Premila;Bag, Rajesh;Singh, Sunita;Kumar, Anand;Tyagi, Renu;
12:42:29 Density and morphology adjustments of gallium nitride nanowires
DOI:10.1016/j.apsusc.2013.07.069 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Teker, Kasif;
12:43:1 Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
DOI:10.1063/1.3515418 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Bayram, C.;Vashaei, Z.;Razeghi, M.;
12:43:2 AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
DOI:10.1063/1.3294633 JN:APPLIED PHYSICS LETTERS PY:2010
TC:30 AU: Bayram, C.;Vashaei, Z.;Razeghi, M.;
12:43:3 Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires
DOI:10.1021/nl1017578 JN:NANO LETTERS PY:2010
TC:32 AU: Songmuang, R.;Katsaros, G.;Monroy, E.;Spathis, P.;Bougerol, C.;Mongillo, M.;De Franceschi, S.;
12:43:4 Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes-Theoretical investigation
DOI:10.1063/1.4804414 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Chen, Haoran;Yang, Lin'an;Long, Shuang;Hao, Yue;
12:43:5 Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
DOI:10.1063/1.4893561 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Chen, Haoran;Yang, Lin'an;Hao, Yue;
12:43:6 Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
DOI:10.1063/1.3525834 JN:APPLIED PHYSICS LETTERS PY:2010
TC:69 AU: Suzuki, Safumi;Asada, Masahiro;Teranishi, Atsushi;Sugiyama, Hiroki;Yokoyama, Haruki;
12:43:7 Origin of the electrical instabilities in GaN/AlGaN double-barrier structure
DOI:10.1063/1.3645011 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Sakr, S.;Warde, E.;Tchernycheva, M.;Rigutti, L.;Isac, N.;Julien, F. H.;
12:43:8 Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates
DOI:10.1063/1.4729819 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Li, D.;Tang, L.;Edmunds, C.;Shao, J.;Gardner, G.;Manfra, M. J.;Malis, O.;
12:43:9 Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon
DOI:10.1063/1.3701586 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Carnevale, S. D.;Marginean, C.;Phillips, P. J.;Kent, T. F.;Sarwar, A. T. M. G.;Mills, M. J.;Myers, R. C.;
12:43:10 Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
DOI:10.1063/1.3372763 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Vashaei, Z.;Bayram, C.;Razeghi, M.;
12:43:11 Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures
DOI:10.1116/1.4829432 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Shao, Ye;Carnevale, Santino D.;Sarwar, A. T. M. G.;Myers, Roberto C.;Lu, Wu;
12:43:12 Investigation of the electronic transport in GaN nanowires containing GaN/A1N quantum discs
DOI:10.1088/0957-4484/21/42/425206 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Rigutti, Lorenzo;Jacopin, Gwenole;Bugallo, Andres De Luna;Tchernycheva, Maria;Warde, Elias;Julien, Francois H.;Songmuang, Rudeesun;Galopin, Elisabeth;Largeau, Ludovic;Harmand, Jean-Christophe;
12:43:13 Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures
DOI:10.1103/PhysRevB.84.245313 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Berland, Kristian;Andersson, Thorvald G.;Hyldgaard, Per;
12:43:14 Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
DOI:10.1063/1.3484280 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Bayram, C.;Vashaei, Z.;Razeghi, M.;
12:43:15 Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz
DOI:10.1063/1.3667191 JN:APPLIED PHYSICS LETTERS PY:2011
TC:52 AU: Feiginov, Michael;Sydlo, Cezary;Cojocari, Oleg;Meissner, Peter;
12:43:16 Ballistic transport in GaN/AlGaN resonant tunneling diodes
DOI:10.1063/1.3533975 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Sakr, S.;Warde, E.;Tchernycheva, M.;Julien, F. H.;
12:43:17 Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
DOI:10.1063/1.3659468 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Boucherit, M.;Soltani, A.;Monroy, E.;Rousseau, M.;Deresmes, D.;Berthe, M.;Durand, C.;De Jaeger, J. -C.;
12:43:18 Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode
DOI:10.1063/1.4820460 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Li, Liang;Yang, Lin'an;Zhang, Jincheng;Hao, Yue;
12:43:19 Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices
DOI:10.1063/1.3493185 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Vashaei, Z.;Bayram, C.;Lavenus, P.;Razeghi, M.;
12:43:20 InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
DOI:10.1063/1.3507885 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Mikulics, M.;Stoklas, R.;Dadgar, A.;Gregusova, D.;Novak, J.;Gruetzmacher, D.;Krost, A.;Kordos, P.;
12:43:21 Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
DOI:10.1063/1.3650253 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Yang, Lin'an;He, Hanbing;Mao, Wei;Hao, Yue;
12:43:22 Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
DOI:10.1007/s11664-012-1920-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:2 AU: Warde, Elias;Sakr, Salam;Tchernycheva, Maria;Julien, Francois Henry;
12:43:23 Negative differential resistance in GaN tunneling hot electron transistors
DOI:10.1063/1.4900780 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yang, Zhichao;Nath, Digbijoy;Rajan, Siddharth;
12:43:24 Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures
DOI:10.1063/1.3511334 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Sudradjat, Faisal;Zhang, Wei;Driscoll, Kristina;Liao, Yitao;Bhattacharyya, Anirban;Thomidis, Christos;Zhou, Lin;Smith, David J.;Moustakas, Theodore D.;Paiella, Roberto;
12:43:25 Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode
DOI:10.1116/1.4732117 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Yilmazoglu, Oktay;Considine, Laurence;Joshi, Ravi;Mimura, Hidenori;Pavlidis, Dimitris;Hartnagel, Hans L.;Schneider, Joerg J.;Evtukh, Anatoli;Semenenko, Mykola;Litovchenko, Vladimir;
12:43:26 Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure
DOI:10.1103/PhysRevB.90.165415 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Jonasson, O.;Knezevic, I.;
12:43:27 Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure
DOI:10.1063/1.3490248 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Cheng, H.;Kurdak, C.;Leach, J. H.;Wu, M.;Morkoc, H.;
12:43:28 Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz
DOI:10.1063/1.4884602 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Feiginov, Michael;Kanaya, Hidetoshi;Suzuki, Safumi;Asada, Masahiro;
12:43:29 Negative differential resistance in GaN nanowire network
DOI:10.1063/1.3309670 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Dragoman, M.;Konstantinidis, G.;Cismaru, A.;Vasilache, D.;Dinescu, A.;Dragoman, D.;Neculoiu, D.;Buiculescu, R.;Deligeorgis, G.;Vajpeyi, A. P.;Georgakilas, A.;
12:43:30 High-frequency nonlinear characteristics of resonant-tunnelling diodes
DOI:10.1063/1.3644491 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Feiginov, Michael;Sydlo, Cezary;Cojocari, Oleg;Meissner, Peter;
12:43:31 Wigner quasi-particle attributes-An asymptotic perspective
DOI:10.1063/1.4802931 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Nedjalkov, M.;Schwaha, P.;Selberherr, S.;Sellier, J. M.;Vasileska, D.;
12:43:32 Effect of heterostructure design on current-voltage characteristics in AlxGa1-xN/GaN double-barriers resonant tunneling diode
DOI:10.1063/1.4767382 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Boucherit, M.;Soltani, A.;Rousseau, M.;Farvacque, J. -L.;DeJaeger, J. -C.;
12:43:33 Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN
DOI:10.1063/1.3676199 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Wang, S. L.;Liu, H. X.;Gao, B.;Fan, J. B.;Ma, F.;Kuang, Q. W.;
12:43:34 Decoherence and time reversibility: The role of randomness at interfaces
DOI:10.1063/1.4828736 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Sellier, J. M.;Nedjalkov, M.;Dimov, I.;Selberherr, S.;
12:43:35 Electronic and transport properties of a nanometer-scale Au/AlN(0001)/Au junction from first-principles
DOI:10.1063/1.3551709 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Lu, T-H;Tsai, M-H;
12:43:36 Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays
DOI:10.1063/1.3460642 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Asada, Masahiro;
12:44:1 Doping of semiconductor nanowires
DOI:10.1557/jmr.2011.214 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:41 AU: Wallentin, Jesper;Borgstroem, Magnus T.;
12:44:2 Current-Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
DOI:10.1021/nl402570u JN:NANO LETTERS PY:2013
TC:6 AU: Timm, Rainer;Persson, Olof;Engberg, David L. J.;Fian, Alexander;Webb, James L.;Wallentin, Jesper;Jonsson, Andreas;Borgstrom, Magnus T.;Samuelson, Lars;Mikkelsen, Anders;
12:44:3 P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
DOI:10.1021/nl100157w JN:NANO LETTERS PY:2010
TC:47 AU: Dufouleur, Joseph;Colombo, Carlo;Garma, Tonko;Ketterer, Bernt;Uccelli, Emanuele;Nicotra, Marco;Fontcuberta i Morral, Anna;
12:44:4 Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility
DOI:10.1021/nl504566t JN:NANO LETTERS PY:2015
TC:2 AU: Boland, Jessica L.;Conesa-Boj, Sonia;Parkinson, Patrick;Tuetuencueoglu, Goezde;Matteini, Federico;Rueffer, Daniel;Casadei, Alberto;Amaduzzi, Francesca;Jabeen, Fauzia;Davies, Christopher L.;Joyce, Hannah J.;Herz, Laura M.;Fontcuberta i Morral, Anna;Johnston, Michael B.;
12:44:5 Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas
DOI:10.1021/nl404253x JN:NANO LETTERS PY:2014
TC:13 AU: Casadei, Alberto;Pecora, Emanuele F.;Trevino, Jacob;Forestiere, Carlo;Rueffer, Daniel;Russo-Averchi, Eleonora;Matteini, Federico;Tutuncuoglu, Gozde;Heiss, Martin;Fontcuberta i Morral, Anna;Dal Negro, Luca;
12:44:6 Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
DOI:10.1021/nl504929n JN:NANO LETTERS PY:2015
TC:0 AU: Wang, Fan;Gao, Qian;Peng, Kun;Li, Zhe;Li, Ziyuan;Guo, Yanan;Fu, Lan;Smith, Leigh Morris;Tan, Hark Hoe;Jagadish, Chennupati;
12:44:7 Doping incorporation paths in catalyst-free Be-doped GaAs nanowires
DOI:10.1063/1.4772020 JN:APPLIED PHYSICS LETTERS PY:2013
TC:15 AU: Casadei, Alberto;Krogstrup, Peter;Heiss, Martin;Rohr, Jason A.;Colombo, Carlo;Ruelle, Thibaud;Upadhyay, Shivendra;Sorensen, Claus B.;Nygard, Jesper;Fontcuberta i Morral, Anna;
12:44:8 Incorporation of the dopants Si and Be into GaAs nanowires
DOI:10.1063/1.3428358 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Hilse, M.;Ramsteiner, M.;Breuer, S.;Geelhaar, L.;Riechert, H.;
12:44:9 Rectifying characteristics of Te-doped GaAs nanowires
DOI:10.1063/1.3658633 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Salehzadeh, O.;Chen, M. X.;Kavanagh, K. L.;Watkins, S. P.;
12:44:10 Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
DOI:10.1063/1.4809576 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Rolland, Chloe;Caroff, Philippe;Coinon, Christophe;Wallart, Xavier;Leturcq, Renaud;
12:44:11 Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping
DOI:10.1063/1.4826198 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Fanetti, M.;Ambrosini, S.;Amati, M.;Gregoratti, L.;Abyaneh, M. K.;Franciosi, A.;Chia, A. C. E.;LaPierre, R. R.;Rubini, S.;
12:44:12 Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas
DOI:10.1021/acs.nanolett.5b00565 JN:NANO LETTERS PY:2015
TC:0 AU: Ramezani, Mohammad;Casadei, Alberto;Grzela, Grzegorz;Matteini, Federico;Tuetuencueoglu, Goezde;Rueffer, Daniel;Fontcuberta i Morral, Anna;Gomez Rivas, Jaime;
12:44:13 Unlocking doping and compositional profiles of nanowire ensembles using SIMS
DOI:10.1088/0957-4484/24/4/045701 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Chia, A. C. E.;Boulanger, J. P.;LaPierre, R. R.;
12:44:14 Geometry- and size-dependence of electrical properties of metal contacts on semiconducting nanowires
DOI:10.1063/1.3499698 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Park, Hongsik;Beresford, Roderic;Hong, Seungbum;Xu, Jimmy;
12:44:15 Controlled axial and radial Te-doping of GaAs nanowires
DOI:10.1063/1.4751988 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Salehzadeh, O.;Kavanagh, K. L.;Watkins, S. P.;
12:44:16 Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.130 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Dheeraj, D. L.;Munshi, A. M.;Christoffersen, O. M.;Kim, D. C.;Signorello, G.;Riel, H.;van Helvoort, A. T. J.;Weman, H.;Fimland, B. O.;
12:44:17 Effects of Gold Diffusion on n-Type Doping of GaAs Nanowires
DOI:10.1021/nl102594e JN:NANO LETTERS PY:2010
TC:21 AU: Tambe, Michael J.;Ren, Shenqiang;Gradecak, Silvija;
12:44:18 Doping profile of InP nanowires directly imaged by photoemission electron microscopy
DOI:10.1063/1.3662933 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Hjort, M.;Wallentin, J.;Timm, R.;Zakharov, A. A.;Andersen, J. N.;Samuelson, L.;Borgstrom, M. T.;Mikkelsen, A.;
12:44:19 Compensation mechanism in silicon-doped gallium arsenide nanowires
DOI:10.1063/1.3517254 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Ketterer, B.;Mikheev, E.;Uccelli, E.;Fontcuberta i Morral, A.;
12:44:20 p-type doping of GaAs nanowires using carbon
DOI:10.1063/1.4759368 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Salehzadeh, O.;Zhang, X.;Gates, B. D.;Kavanagh, K. L.;Watkins, S. P.;
12:44:21 Evaluation of metal-nanowire electrical contacts by measuring contact end resistance
DOI:10.1088/0957-4484/23/24/245201 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Park, Hongsik;Beresford, Roderic;Ha, Ryong;Choi, Heon-Jin;Shin, Hyunjung;Xu, Jimmy;
12:44:22 Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
DOI:10.1063/1.3457862 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Le, Son T.;Jannaty, P.;Zaslavsky, A.;Dayeh, S. A.;Picraux, S. T.;
12:44:23 An effective one-particle theory for formation energies in doping Si nanostructures
DOI:10.1063/1.3571552 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Chan, Tzu-Liang;Zhang, S. B.;Chelikowsky, James R.;
12:44:24 Zn-doping of GaAs nanowires grown by Aerotaxy
DOI:10.1016/j.jcrysgro.2014.09.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yang, Fangfang;Messing, Maria E.;Mergenthaler, Kilian;Ghasemi, Masoomeh;Johansson, Jonas;Wallenberg, L. Reine;Pistol, Mats-Erik;Deppert, Knut;Samuelson, Lars;Magnusson, Martin H.;
12:44:25 Effects of electrical contacts on the photoconductive gain of nanowire photodetectors
DOI:10.1063/1.3647559 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Park, Hongsik;Kim, Jin Ho;Beresford, Roderic;Xu, Jimmy;
12:45:1:1 Polycrystalline silicon thin-film solar cells: Status and perspectives
DOI:10.1016/j.solmat.2013.05.043 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:29 AU: Becker, C.;Amkreutz, D.;Sontheimer, T.;Preidel, V.;Lockau, D.;Haschke, J.;Jogschies, L.;Klimm, C.;Merkel, J. J.;Plocica, P.;Steffens, S.;Rech, B.;
12:45:1:2 Polycrystalline silicon heterojunction thin-film solar cells on glass exhibiting 582 mV open-circuit voltage
DOI:10.1016/j.solmat.2013.03.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:32 AU: Haschke, J.;Jogschies, L.;Amkreutz, D.;Korte, L.;Rech, B.;
12:45:1:3 Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells
DOI:10.1063/1.4754609 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Fehr, M.;Simon, P.;Sontheimer, T.;Leendertz, C.;Gorka, B.;Schnegg, A.;Rech, B.;Lips, K.;
12:45:1:4 Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films
DOI:10.1063/1.4890625 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Steffens, S.;Becker, C.;Amkreutz, D.;Klossek, A.;Kittler, M.;Chen, Y. -Y.;Schnegg, A.;Klingsporn, M.;Abou-Ras, D.;Lips, K.;Rech, B.;
12:45:1:5 Defect annealing processes for polycrystalline silicon thin-film solar cells
DOI:10.1016/j.mseb.2012.11.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:6 AU: Steffens, S.;Becker, C.;Zollondz, J. -H.;Chowdhury, A.;Slaoui, A.;Lindekugel, S.;Schubert, U.;Evans, R.;Rech, B.;
12:45:1:6 Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques
DOI:10.1063/1.4883642 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Friedrich, F.;Herfurth, N.;Teodoreanu, A. -M.;Sontheimer, T.;Preidel, V.;Rech, B.;Boit, C.;
12:45:1:7 Conversion efficiency and process stability improvement of electron beam crystallized thin film silicon solar cells on glass
DOI:10.1016/j.solmat.2013.12.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:20 AU: Amkreutz, D.;Haschke, J.;Haering, T.;Ruske, F.;Rech, B.;
12:45:1:8 An effective medium approach for modeling polycrystalline silicon thin film solar cells
DOI:10.1016/j.solmat.2013.05.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Teodoreanu, Ana-Maria;Leendertz, Caspar;Sontheimer, Tobias;Korte, Lars;Rech, Bernd;
12:45:1:9 Towards wafer quality crystalline silicon thin-film solar cells on glass
DOI:10.1016/j.solmat.2014.04.035 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:29 AU: Haschke, Jan;Amkreutz, Daniel;Korte, Lars;Ruske, Florian;Rech, Bernd;
12:45:1:10 High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate
DOI:10.1007/s00339-012-6811-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Chowdhury, A.;Schneider, J.;Dore, J.;Mermet, F.;Slaoui, A.;
12:45:1:11 Technological status of polycrystalline silicon thin-film solar cells on glass
DOI:10.1016/j.solmat.2013.08.041 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Gall, S.;Rech, B.;
12:45:1:12 Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications
DOI:10.1063/1.4863402 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Theodorakos, I.;Zergioti, I.;Vamvakas, V.;Tsoukalas, D.;Raptis, Y. S.;
12:45:2:1 Material quality requirements for efficient epitaxial film silicon solar cells
DOI:10.1063/1.3309751 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Alberi, Kirstin;Martin, Ina T.;Shub, Maxim;Teplin, Charles W.;Romero, Manuel J.;Reedy, Robert C.;Iwaniczko, Eugene;Duda, Anna;Stradins, Paul;Branz, Howard M.;Young, David L.;
12:45:2:2 Hot-wire chemical vapor deposition of epitaxial film crystal silicon for photovoltaics
DOI:10.1016/j.tsf.2011.01.335 JN:THIN SOLID FILMS PY:2011
TC:29 AU: Branz, Howard M.;Teplin, Charles W.;Romero, Manuel J.;Martin, Ina T.;Wang, Qi;Alberi, Kirstin;Young, David L.;Stradins, Paul;
12:45:2:3 Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 degrees C
DOI:10.1063/1.3422474 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Teplin, Charles W.;Alberi, Kirstin;Shub, Maxim;Beall, Carolyn;Martin, Ina T.;Romero, Manuel J.;Young, David L.;Reedy, Robert C.;Stradins, Paul;Branz, Howard M.;
12:45:2:4 Dislocation-limited open circuit voltage in film crystal silicon solar cells
DOI:10.1063/1.4754142 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Alberi, Kirstin;Branz, Howard M.;Guthrey, Harvey;Romero, Manuel J.;Martin, Ina T.;Teplin, Charles W.;Stradins, Paul;Young, David L.;
12:45:2:5 Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates
DOI:10.1016/j.solmat.2009.08.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:26 AU: Gordon, I.;Vallon, S.;Mayolet, A.;Beaucarne, G.;Poortmans, J.;
12:45:2:6 Three novel ways of making thin-film crystalline-silicon layers on glass for solar cell applications
DOI:10.1016/j.solmat.2010.11.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:27 AU: Gordon, I.;Dross, F.;Depauw, V.;Masolin, A.;Qiu, Y.;Vaes, J.;Van Gestel, D.;Poortmans, J.;
12:45:2:7 Nanoscale measurements of local junction breakdown in epitaxial film silicon solar cells
DOI:10.1063/1.3479534 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Romero, M. J.;Alberi, K.;Martin, I. T.;Jones, K. M.;Young, D. L.;Yan, Y.;Teplin, C.;Al-Jassim, M. M.;Stradins, P.;Branz, H. M.;
12:45:2:8 Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
DOI:10.1063/1.3298455 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Martin, Ina T.;Teplin, Charles W.;Doyle, James R.;Branz, Howard M.;Stradins, Paul;
12:45:2:9 Reformulation of solar cell physics to facilitate experimental separation of recombination pathways
DOI:10.1063/1.4819728 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Grover, Sachit;Li, Jian V.;Young, David L.;Stradins, Paul;Branz, Howard M.;
12:45:2:10 Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1(x)Ge(x)/crystalline-Si heterojunction solar cells
DOI:10.1063/1.4805078 JN:AIP ADVANCES PY:2013
TC:2 AU: Hadi, Sabina Abdul;Hashemi, Pouya;DiLello, Nicole;Polyzoeva, Evelina;Nayfeh, Ammar;Hoyt, Judy L.;
12:45:3:1 Lifetime limiting recombination pathway in thin-film polycrystalline silicon on glass solar cells
DOI:10.1063/1.3429206 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:31 AU: Wong, J.;Huang, J. L.;Eggleston, B.;Green, M. A.;Kunz, O.;Evans, R.;Keevers, M.;Egan, R. J.;
12:45:3:2 Polycrystalline silicon on glass thin-film solar cells: A transition from solid-phase to liquid-phase crystallised silicon
DOI:10.1016/j.solmat.2013.08.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:15 AU: Varlamov, S.;Dore, J.;Evans, R.;Ong, D.;Eggleston, B.;Kunz, O.;Schubert, U.;Young, T.;Huang, J.;Soderstrom, T.;Omaki, K.;Kim, K.;Teal, A.;Jung, M.;Yun, J.;Pakhuruddin, Z. M.;Egan, R.;Green, M. A.;
12:45:3:3 Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition
DOI:10.1016/j.tsf.2011.06.089 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Tao, Yuguo;Varlamov, Sergey;Jin, Guangyao;Wolf, Michael;Egan, Renate;
12:45:3:4 Fabrication of an ant-nest nanostructure in polycrystalline silicon thin films for solar cells
DOI:10.1016/j.scriptamat.2014.08.006 JN:SCRIPTA MATERIALIA PY:2014
TC:0 AU: Xue, Chaowei;Huang, Jialiang;Rao, Jing;Varlamov, Sergey;
12:45:3:5 Influence of the absorber doping for p-type polycrystalline silicon thin-film solar cells on glass prepared by electron beam evaporation and solid-phase crystallization
DOI:10.1063/1.3553886 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Ouyang, Zi;Kunz, Oliver;Sproul, Alistair B.;Varlamov, Sergey;
12:45:3:6 Solar Energy Materials & Solar Cells
DOI:10.1016/j.solmat.2014.06.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Teal, Anthony;Dore, Jonathon;Varlamov, Sergey;
12:45:3:7 Effects of annealing temperature on crystallisation kinetics, film properties and cell performance of silicon thin-film solar cells on glass
DOI:10.1016/j.solmat.2012.01.039 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:3 AU: Tao, Yuguo;Varlamov, Sergey;Kunz, Oliver;Ouyang, Zi;Wong, Johnson;Soderstrom, Thomas;Wolf, Michael;Egan, Renate;
12:45:3:8 Lifetime limiting recombination pathway in thin-film polycrystalline silicon on glass solar cells (vol 107, 123705, 2010)
DOI:10.1063/1.3517062 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Wong, J.;
12:45:4:1 Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films
DOI:10.1116/1.4897298 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Kumar, Avishek;Law, Felix;Dalapati, Goutam K.;Subramanian, Gomathy S.;Widenborg, Per I.;Tan, Hui R.;Aberle, Armin G.;
12:45:4:2 Identification of geometrically necessary dislocations in solid phase crystallized poly-Si
DOI:10.1063/1.4816563 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Law, Felix;Yi, Yang;Hidayat;Widenborg, Per I.;Luther, Joachim;Hoex, Bram;
12:45:4:3 Impact of the n(+) emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells
DOI:10.1063/1.4823811 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kumar, A.;Hidayat, H.;Ke, C.;Chakraborty, S.;Dalapati, G. K.;Widenborg, P. I.;Tan, C. C.;Dolmanan, S.;Aberle, A. G.;
12:45:4:4 Impact of rapid thermal annealing temperature on non-metallised polycrystalline silicon thin-film diodes on glass
DOI:10.1016/j.tsf.2013.02.023 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Hidayat, H.;Kumar, A.;Law, F.;Ke, C.;Widenborg, P. I.;Aberle, A. G.;
12:45:4:5 Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3
DOI:10.1116/1.4870817 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Kim, Byongju;Jang, Hyunchul;Kim, Sun-Wook;Byeon, Dae-Seop;Koo, Sangmo;Song, Jason S.;Ko, Dae-Hong;
12:45:5:1 Correlation between structural and opto-electronic characteristics of crystalline Si microhole arrays for photonic light management
DOI:10.1063/1.4829008 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Sontheimer, Tobias;Preidel, Veit;Lockau, Daniel;Back, Franziska;Rudigier-Voigt, Eveline;Loechel, Bernd;Erko, Alexei;Schmidt, Frank;Schnegg, Alexander;Lips, Klaus;Becker, Christiane;Rech, Bernd;
12:45:5:2 Periodic nanostructures imprinted on high-temperature stable sol-gel films by ultraviolet-based nanoimprint lithography for photovoltaic and photonic applications
DOI:10.1016/j.tsf.2014.04.082 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Back, Franziska;Bockmeyer, Matthias;Rudigier-Voigt, Eveline;Loebmann, Peer;
12:45:5:3 Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects
DOI:10.1088/0957-4484/23/13/135302 JN:NANOTECHNOLOGY PY:2012
TC:17 AU: Becker, C.;Lockau, D.;Sontheimer, T.;Schubert-Bischoff, P.;Rudigier-Voigt, E.;Bockmeyer, M.;Schmidt, F.;Rech, B.;
12:45:5:4 Directional growth and crystallization of silicon thin films prepared by electron-beam evaporation on oblique and textured surfaces
DOI:10.1016/j.jcrysgro.2012.12.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:12 AU: Merkel, J. J.;Sontheimer, T.;Rech, B.;Becker, C.;
12:45:6:1 Characterization and control of crystal nucleation in amorphous electron beam evaporated silicon for thin film solar cells
DOI:10.1063/1.3627373 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Sontheimer, Tobias;Scherf, Simone;Klimm, Carola;Becker, Christiane;Rech, Bernd;
12:45:6:2 Light harvesting architectures for electron beam evaporated solid phase crystallized Si thin film solar cells: Statistical and periodic approaches
DOI:10.1016/j.jnoncrysol.2011.10.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:6 AU: Sontheimer, Tobias;Rudigier-Voigt, Eveline;Bockmeyer, Matthias;Lockau, Daniel;Klimm, Carola;Becker, Christiane;Rech, Bernd;
12:45:6:3 The influence of space charge regions on effective charge carrier lifetime in thin films and resulting opportunities for materials characterization
DOI:10.1063/1.4788716 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Leendertz, C.;Teodoreanu, A. -M.;Korte, L.;Rech, B.;
12:45:6:4 Compatibility of glass textures with E-beam evaporated polycrystalline silicon thin-film solar cells
DOI:10.1007/s00339-012-7318-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Cui, Hongtao;Campbell, Patrick R.;Green, Martin A.;
12:45:6:5 Effect of ex-situ hydrogen passivation on the structural properties of e-beam evaporated amorphous silicon thin film for solar cell applications
DOI:10.1016/j.jnoncrysol.2012.05.016 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Lee, Changwoo;Rane-Fondacaro, Manisha V.;Efstathiadis, Haralabos;Haldar, Pradeep;
12:45:7:1 Aluminum-induced crystallization for thin-film polycrystalline silicon solar cells: Achievements and perspective
DOI:10.1016/j.solmat.2013.08.014 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Van Gestel, Dries;Gordon, Ivan;Poortmans, Jef;
12:45:7:2 Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening
DOI:10.1016/j.solmat.2010.06.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:6 AU: Tuzun, O.;Qiu, Y.;Slaoui, A.;Gordon, I.;Maurice, C.;Venkatachalam, S.;Chatterjee, S.;Beaucarne, G.;Poortmans, J.;
12:45:8:1 An alternative method to determine the steady state nucleation rate in thermally annealed HWCVD a-Si:H films
DOI:10.1016/j.tsf.2011.01.332 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Mahan, A. Harv;Parilla, Phil A.;Moutinho, Helio;To, Bobby;Dabney, Matthew S.;Ginley, David S.;
12:45:8:2 Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films
DOI:10.1063/1.4803686 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Mahan, A. H.;Dabney, M. S.;Ginley, D. S.;
12:45:8:3 The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films
DOI:10.1063/1.4712045 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Mahan, A. H.;Dabney, M. S.;Reedy, R. C., Jr.;Molina, D.;Ginley, D. S.;
12:45:9:1 Heterojunction solar cells produced by porous silicon layer transfer technology
DOI:10.1007/s00339-012-6996-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Yue, Zhihao;Shen, Honglie;Zhang, Lei;Liu, Bin;Gao, Chao;Lv, Hongjie;
12:45:9:2 Effect of hydrogen plasma passivation on performance of HIT solar cells
DOI:10.1016/j.solmat.2010.05.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:8 AU: Lee, Seung Jik;Kim, Se Hwan;Kim, Dae Won;Kim, Ki Hyung;Kim, Beom Kyu;Jang, Jin;
12:46:1 Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot
DOI:10.1021/nl404400d JN:NANO LETTERS PY:2014
TC:36 AU: Holmes, Mark J.;Choi, Kihyun;Kako, Satoshi;Arita, Munetaka;Arakawa, Yasuhiko;
12:46:2 Selective-area growth of thin GaN nanowires by MOCVD
DOI:10.1016/j.jcrysgro.2012.07.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:23 AU: Choi, Kihyun;Arita, Munetaka;Arakawa, Yasuhiko;
12:46:3 Steering photon statistics in single quantum dots: From one- to two-photon emission
DOI:10.1103/PhysRevB.87.245314 JN:PHYSICAL REVIEW B PY:2013
TC:5 AU: Callsen, G.;Carmele, A.;Hoenig, G.;Kindel, C.;Brunnmeier, J.;Wagner, M. R.;Stock, E.;Reparaz, J. S.;Schliwa, A.;Reitzenstein, S.;Knorr, A.;Hoffmann, A.;
12:46:4 Exciton fine-structure splitting in GaN/AlN quantum dots
DOI:10.1103/PhysRevB.81.241309 JN:PHYSICAL REVIEW B PY:2010
TC:24 AU: Kindel, C.;Kako, S.;Kawano, T.;Oishi, H.;Arakawa, Y.;Hoenig, G.;Winkelnkemper, M.;Schliwa, A.;Hoffmann, A.;Bimberg, D.;
12:46:5 Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
DOI:10.1063/1.3590151 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:24 AU: Gacevic, Z.;Das, A.;Teubert, J.;Kotsar, Y.;Kandaswamy, P. K.;Kehagias, Th.;Koukoula, T.;Komninou, Ph.;Monroy, E.;
12:46:6 Measurement of an Exciton Rabi Rotation in a Single GaN/AlxGa1-xN Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control
DOI:10.1103/PhysRevLett.111.057401 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:7 AU: Holmes, M.;Kako, S.;Choi, K.;Podemski, P.;Arita, M.;Arakawa, Y.;
12:46:7 Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires
DOI:10.1063/1.4826931 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Choi, Kihyun;Kako, Satoshi;Holmes, Mark J.;Arita, Munetaka;Arakawa, Yasuhiko;
12:46:8 Size dependent biexciton binding energies in GaN quantum dots
DOI:10.1063/1.3670040 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Amloy, S.;Yu, K. H.;Karlsson, K. F.;Farivar, R.;Andersson, T. G.;Holtz, P. O.;
12:46:9 Exciton acoustic-phonon coupling in single GaN/AlN quantum dots
DOI:10.1103/PhysRevB.85.081303 JN:PHYSICAL REVIEW B PY:2012
TC:12 AU: Ostapenko, Irina A.;Hoenig, Gerald;Rodt, Sven;Schliwa, Andrei;Hoffmann, Axel;Bimberg, Dieter;Dachner, Matthias-Rene;Richter, Marten;Knorr, Andreas;Kako, Satoshi;Arakawa, Yasuhiko;
12:46:10 Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers
DOI:10.1063/1.3626589 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Yang, Xuelin;Arita, Munetaka;Kako, Satoshi;Arakawa, Yasuhiko;
12:46:11 Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots
DOI:10.1063/1.3588335 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Das, A.;Dimitrakopulos, G. P.;Kotsar, Y.;Lotsari, A.;Kehagias, Th.;Komninou, Ph.;Monroy, E.;
12:46:12 Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
DOI:10.1016/j.jcrysgro.2012.09.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Choi, Kihyun;Arita, Munetaka;Kako, Satoshi;Arakawa, Yasuhiko;
12:46:13 Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
DOI:10.1021/nl200810v JN:NANO LETTERS PY:2011
TC:27 AU: Hsu, Chih-Wei;Lundskog, Anders;Karlsson, K. Fredrik;Forsberg, Urban;Janzen, Erik;Holtz, Per Olof;
12:46:14 Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
DOI:10.1103/PhysRevB.83.201307 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Amloy, S.;Chen, Y. T.;Karlsson, K. F.;Chen, K. H.;Hsu, H. C.;Hsiao, C. L.;Chen, L. C.;Holtz, P. O.;
12:46:15 Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.4812345 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Zhu, Tongtong;Oehler, Fabrice;Reid, Benjamin P. L.;Emery, Robert M.;Taylor, Robert A.;Kappers, Menno J.;Oliver, Rachel A.;
12:46:16 Observations of Rabi oscillations in a non-polar InGaN quantum dot
DOI:10.1063/1.4886961 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Reid, Benjamin P. L.;Kocher, Claudius;Zhu, Tongtong;Oehler, Fabrice;Emery, Robert;Chan, Christopher C. S.;Oliver, Rachel A.;Taylor, Robert A.;
12:46:17 Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots
DOI:10.1103/PhysRevB.88.045309 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Hoenig, Gerald;Rodt, Sven;Callsen, Gordon;Ostapenko, Irina A.;Kure, Thomas;Schliwa, Andrei;Kindel, Christian;Bimberg, Dieter;Hoffmann, Axel;
12:46:18 Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot
DOI:10.1063/1.4893476 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Jemsson, Tomas;Machhadani, Houssaine;Karlsson, K. Fredrik;Hsu, Chih-Wei;Holtz, Per-Olof;
12:46:19 InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
DOI:10.1088/0957-4484/23/30/305708 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Lundskog, A.;Palisaitis, J.;Hsu, C. W.;Eriksson, M.;Karlsson, K. F.;Hultman, L.;Persson, P. O. A.;Forsberg, U.;Holtz, P. O.;Janzen, E.;
12:46:20 Large internal dipole moment in InGaN/GaN quantum dots
DOI:10.1063/1.3477952 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Ostapenko, Irina A.;Hoenig, Gerald;Kindel, Christian;Rodt, Sven;Strittmatter, Andre;Hoffmann, Axel;Bimberg, Dieter;
12:46:21 On the polarized emission from exciton complexes in GaN quantum dots
DOI:10.1063/1.3675572 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Amloy, S.;Karlsson, K. F.;Andersson, T. G.;Holtz, P. O.;
12:46:22 Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots
DOI:10.1063/1.4824650 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Sergent, S.;Kako, S.;Buerger, M.;As, D. J.;Arakawa, Y.;
12:46:23 Probing the Excitonic States of Site-Controlled GaN Nanowire Quantum Dots
DOI:10.1021/nl503949u JN:NANO LETTERS PY:2015
TC:0 AU: Holmes, Mark J.;Kako, Satoshi;Choi, Kihyun;Podemski, Pawel;Arita, Munetaka;Arakawa, Yasuhiko;
12:46:24 Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot
DOI:10.1063/1.4742343 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Amloy, S.;Moskalenko, E. S.;Eriksson, M.;Karlsson, K. F.;Chen, Y. T.;Chen, K. H.;Hsu, H. C.;Hsiao, C. L.;Chen, L. C.;Holtz, P. O.;
12:46:25 Structure and strain state of polar and semipolar InGaN quantum dots
DOI:10.1016/j.apsusc.2011.12.034 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Koukoula, T.;Lotsari, A.;Kehagias, Th.;Dimitrakopulos, G. P.;Haeusler, I.;Das, A.;Monroy, E.;Karakostas, Th.;Komninou, Ph.;
12:46:26 The charged exciton in an InGaN quantum dot on a GaN pyramid
DOI:10.1063/1.4812984 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Hsu, Chih-Wei;Moskalenko, Evgenii S.;Eriksson, Martin O.;Lundskog, Anders;Karlsson, K. Fredrik;Forsberg, Urban;Janzen, Erik;Holtz, Per Olof;
12:46:27 Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy
DOI:10.1063/1.4897993 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Sergent, S.;Kako, S.;Buerger, M.;Schupp, T.;As, D. J.;Arakawa, Y.;
12:46:28 Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
DOI:10.1063/1.4904068 JN:APL MATERIALS PY:2014
TC:0 AU: Griffiths, J. T.;Zhu, T.;Oehler, F.;Emery, R. M.;Fu, W. Y.;Reid, B. P. L.;Taylor, R. A.;Kappers, M. J.;Humphreys, C. J.;Oliver, R. A.;
12:46:29 Excitons and biexcitons in InGaN quantum dot like localization centers
DOI:10.1088/0957-4484/25/49/495702 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Amloy, S.;Karlsson, K. F.;Eriksson, M. O.;Palisaitis, J.;Persson, P. O. A.;Chen, Y. T.;Chen, K. H.;Hsu, H. C.;Hsiao, C. L.;Chen, L. C.;Holtz, P. O.;
12:46:30 Quantum dots as single-photon sources: Antibunching via two-photon excitation
DOI:10.1103/PhysRevB.83.113304 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Wissert, Matthias D.;Rudat, Birgit;Lemmer, Uli;Eisler, Hans-Juergen;
12:46:31 Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k . p theory and configuration-interaction method (vol 79, 245330, 2009)
DOI:10.1103/PhysRevB.86.159902 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Tomic, Stanko;Vukmirovic, Nenad;
12:46:32 Impact of the dark path on quantum dot single photon emitters in small cavities
DOI:10.1103/PhysRevLett.113.143604 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Kamide, Kenji;Iwamoto, Satoshi;Arakawa, Yasuhiko;
12:46:33 Coherent control in semiconductor quantum dots: Reduced optical gain thresholds via biexciton control
DOI:10.1103/PhysRevB.82.125321 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Gerbasi, David;Scholes, Gregory D.;Brumer, Paul;
12:46:34 Preheating temperature and growth temperature dependence of InP nanowires grown by self-catalytic VLS mode on InP substrate
DOI:10.1016/j.jcrysgro.2014.11.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Ogino, T.;Yamauchi, M.;Yamamoto, Y.;Shimomura, K.;Waho, T.;
12:46:35 Population Transfer in Disk Shaped Quantum Dot in Delayed Half Cycle Pulses and Magnetic Field
DOI:10.1166/jctn.2013.2866 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:3 AU: Prasad, Vinod;Silotia, Poonam;
12:46:36 Indistinguishable Photon Pairs from Independent True Chaotic Sources
DOI:10.1103/PhysRevLett.107.253601 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:7 AU: Nevet, Amir;Hayat, Alex;Ginzburg, Pavel;Orenstein, Meir;
12:47:1 Correlating the Nanostructure and Electronic Properties of InAs Nanowires
DOI:10.1021/nl904053j JN:NANO LETTERS PY:2010
TC:63 AU: Schroer, M. D.;Petta, J. R.;
12:47:2 Parallel Array InAs Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics
DOI:10.1021/nn1018329 JN:ACS NANO PY:2010
TC:48 AU: Takahashi, Toshitake;Takei, Kuniharu;Adabi, Ehsan;Fan, Zhiyong;Niknejad, Ali M.;Javey, Ali;
12:47:3 Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices
DOI:10.1021/nn300966j JN:ACS NANO PY:2012
TC:34 AU: Hou, Jared J.;Han, Ning;Wang, Fengyun;Xiu, Fei;Yip, SenPo;Hui, Alvin T.;Hung, TakFu;Ho, Johnny C.;
12:47:4 III-V Nanowires: Synthesis, Property Manipulations, and Device Applications
DOI:10.1155/2014/702859 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:3 AU: Fang, Ming;Han, Ning;Wang, Fengyun;Yang, Zai-xing;Yip, SenPo;Dong, Guofa;Hou, Jared J.;Chueh, Yulun;Ho, Johnny C.;
12:47:5 Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors
DOI:10.1021/nn500201g JN:ACS NANO PY:2014
TC:32 AU: Miao, Jinshui;Hu, Weida;Guo, Nan;Lu, Zhenyu;Zou, Xuming;Liao, Lei;Shi, Suixing;Chen, Pingping;Fan, Zhiyong;Ho, Johnny C.;Li, Tian-Xin;Chen, Xiao Shuang;Lu, Wei;
12:47:6 Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn
DOI:10.1021/nl903322s JN:NANO LETTERS PY:2010
TC:31 AU: Ford, Alexandra C.;Chuang, Steven;Ho, Johnny C.;Chueh, Yu-Lun;Fan, Zhiyong;Javey, Ali;
12:47:7 Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors
DOI:10.1002/adma.201301362 JN:ADVANCED MATERIALS PY:2013
TC:15 AU: Han, Ning;Wang, Fengyun;Hou, Jared J.;Yip, Sen Po;Lin, Hao;Xiu, Fei;Fang, Ming;Yang, Zaixing;Shi, Xiaoling;Dong, Guofa;Hung, Tak Fu;Ho, Johnny C.;
12:47:8 GaAs Nanowires: From Manipulation of Defect Formation to Controllable Electronic Transport Properties
DOI:10.1021/nn403767j JN:ACS NANO PY:2013
TC:8 AU: Han, Ning;Hou, Jared J.;Wang, Fengyun;Yip, SenPo;Yen, Yu-Ting;Yang, Zai-xing;Dong, Guofa;Hung, TakFu;Chueh, Yu-Lun;Ho, Johnny C.;
12:47:9 Surface roughness induced electron mobility degradation in InAs nanowires
DOI:10.1088/0957-4484/24/37/375202 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Wang, Fengyun;Yip, SenPo;Han, Ning;Fok, Kitwa;Lin, Hao;Hou, Jared J.;Dong, Guofa;Hung, TakFu;Chan, K. S.;Ho, Johnny C.;
12:47:10 Controllable p-n Switching Behaviors of GaAs Nanowires via an Interface Effect
DOI:10.1021/nn3011416 JN:ACS NANO PY:2012
TC:22 AU: Han, Ning;Wang, Fengyun;Hou, Jared J.;Xiu, Fei;Yip, Senpo;Hui, Alvin T.;Hung, Takfu;Ho, Johnny C.;
12:47:11 Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates
DOI:10.1088/0957-4484/22/28/285607 JN:NANOTECHNOLOGY PY:2011
TC:26 AU: Han, Ning;Wang, Fengyun;Hui, Alvin T.;Hou, Jared J.;Shan, Guangcun;Xiu, Fei;Hung, TakFu;Ho, Johnny C.;
12:47:12 GaAs nanowire Schottky barrier photovoltaics utilizing Au-Ga alloy catalytic tips
DOI:10.1063/1.4727907 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Han, Ning;Wang, Fengyun;Yip, Senpo;Hou, Jared J.;Xiu, Fei;Shi, Xiaoling;Hui, Alvin T.;Hung, TakFu;Ho, Johnny C.;
12:47:13 Stoichiometric Effect on Electrical, Optical, and Structural Properties of Composition-Tunable InxGa1-xAs Nanowires
DOI:10.1021/nn304174g JN:ACS NANO PY:2012
TC:10 AU: Hou, Jared J.;Wang, Fengyun;Han, Ning;Xiu, Fei;Yip, SenPo;Fang, Ming;Lin, Hao;Hung, Tak F.;Ho, Johnny C.;
12:47:14 Diameter dependence of electron mobility in InGaAs nanowires
DOI:10.1063/1.4794414 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Hou, Jared J.;Wang, Fengyun;Han, Ning;Zhu, Haoshen;Fok, KitWa;Lam, WaiChak;Yip, SenPo;Hung, TakFu;Lee, Joshua E. -Y.;Ho, Johnny C.;
12:47:15 Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism
DOI:10.1063/1.3630006 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Han, Ning;Hui, Alvin T.;Wang, Fengyun;Hou, Jared J.;Xiu, Fei;Hung, TakFu;Ho, Johnny C.;
12:47:16 High-performance indium phosphide nanowires synthesized on amorphous substrates: from formation mechanism to optical and electrical transport measurements
DOI:10.1039/c2jm31232h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Hui, Alvin T.;Wang, Fengyun;Han, Ning;Yip, SenPo;Xiu, Fei;Hou, Jared J.;Yen, Yu-Ting;Hung, TakFu;Chueh, Yu-Lun;Ho, Johnny C.;
12:47:17 Carrier Transport in High Mobility In As Nanowire Junction less Transistors
DOI:10.1021/nl5043165 JN:NANO LETTERS PY:2015
TC:1 AU: Konar, Aniruddha;Mathew, John;Nayak, Kaushik;Bajaj, Mohit;Pandey, Rajan K.;Dhara, Sajal;Murali, K. V. R. M.;Deshmukh, Mandar M.;
12:47:18 Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires
DOI:10.1063/1.4864490 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Tanaka, H.;Morioka, N.;Mori, S.;Suda, J.;Kimoto, T.;
12:47:19 On the p-type character of Cd-and Zn-doped InAs nanowires
DOI:10.1088/0957-4484/22/26/265203 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: dos Santos, Claudia L.;Schmidt, Tome M.;Piquini, Paulo;
12:48:1 Gas Detection with Vertical InAs Nanowire Arrays
DOI:10.1021/nl1005405 JN:NANO LETTERS PY:2010
TC:50 AU: Offermans, Peter;Crego-Calama, Mercedes;Brongersma, Sywert H.;
12:48:2 Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes
DOI:10.1021/nl302502b JN:NANO LETTERS PY:2012
TC:23 AU: Rieger, Torsten;Luysberg, Martina;Schaepers, Thomas;Gruetzmacher, Detlev;Lepsa, Mihail Ion;
12:48:3 Effect of Si-doping on InAs nanowire transport and morphology
DOI:10.1063/1.3631026 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:30 AU: Wirths, S.;Weis, K.;Winden, A.;Sladek, K.;Volk, C.;Alagha, S.;Weirich, T. E.;von der Ahe, M.;Hardtdegen, H.;Lueth, H.;Demarina, N.;Gruetzmacher, D.;Schaepers, Th.;
12:48:4 Electronic Phase Coherence in InAs Nanowires
DOI:10.1021/nl201102a JN:NANO LETTERS PY:2011
TC:26 AU: Bloemers, Ch.;Lepsa, M. I.;Luysberg, M.;Gruetzmacher, D.;Lueth, H.;Schaepers, Th.;
12:48:5 Spin-orbit coupling and phase coherence in InAs nanowires
DOI:10.1103/PhysRevB.82.235303 JN:PHYSICAL REVIEW B PY:2010
TC:23 AU: Hernandez, S. Estevez;Akabori, M.;Sladek, K.;Volk, Ch.;Alagha, S.;Hardtdegen, H.;Pala, M. G.;Demarina, N.;Gruetzmacher, D.;Schaepers, Th.;
12:48:6 Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces
DOI:10.1063/1.3518061 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Weber, J. R.;Janotti, A.;Van de Walle, C. G.;
12:48:7 Hall effect measurements on InAs nanowires
DOI:10.1063/1.4759124 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Bloemers, Ch.;Grap, T.;Lepsa, M. I.;Moers, J.;Trellenkamp, St.;Gruetzmacher, D.;Lueth, H.;Schaepers, Th.;
12:48:8 Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
DOI:10.1103/PhysRevB.83.115305 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Bringer, A.;Schaepers, Th;
12:48:9 Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
DOI:10.1088/0957-4484/24/32/325201 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Bloemers, C.;Rieger, T.;Grap, T.;Raux, M.;Lepsa, M. I.;Lueth, H.;Gruetzmacher, D.;Schaepers, Th;
12:48:10 Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
DOI:10.1088/0957-4484/24/3/035203 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Bloemers, C.;Rieger, T.;Zellekens, P.;Haas, F.;Lepsa, M. I.;Hardtdegen, H.;Guel, Oe;Demarina, N.;Gruetzmacher, D.;Lueth, H.;Schaepers, Th;
12:48:11 Low temperature transport in p-doped InAs nanowires
DOI:10.1063/1.4825275 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Upadhyay, S.;Jespersen, T. S.;Madsen, M. H.;Krogstrup, P.;Nygard, J.;
12:48:12 Spin and impurity effects on flux-periodic oscillations in core-shell nanowires
DOI:10.1103/PhysRevB.90.035421 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Rosdahl, Tomas Orn;Manolescu, Andrei;Gudmundsson, Vidar;
12:48:13 Monitoring structural influences on quantum transport in In As nanowires
DOI:10.1063/1.4742326 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Frielinghaus, Robert;Floehr, Kilian;Sladek, Kamil;Weirich, Thomas E.;Trellenkamp, Stefan;Hardtdegen, Hilde;Schaepers, Thomas;Schneider, Claus M.;Meyer, Carola;
12:48:14 Phase coherent transport in hollow InAs nanowires
DOI:10.1063/1.4896286 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wenz, T.;Rosien, M.;Haas, F.;Rieger, T.;Demarina, N.;Lepsa, M. I.;Lueth, H.;Gruetzmacher, D.;Schaepers, Th.;
12:48:15 Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
DOI:10.1103/PhysRevB.89.045417 JN:PHYSICAL REVIEW B PY:2014
TC:3 AU: Guel, Oe.;Demarina, N.;Bloemers, C.;Rieger, T.;Luth, H.;Lepsa, M. I.;Gruetzmacher, D.;Schaepers, Th.;
12:48:16 Quantum dots in InAs nanowires induced by surface potential fluctuations
DOI:10.1088/0957-4484/25/13/135203 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Weis, Karl;Wirths, Stephan;Winden, Andreas;Sladek, Kamil;Hardtdegen, Hilde;Lueth, Hans;Gruetzmacher, Detlev;Schaepers, Thomas;
12:48:17 Suppression of weak antilocalization in InAs nanowires
DOI:10.1103/PhysRevB.81.155449 JN:PHYSICAL REVIEW B PY:2010
TC:14 AU: Roulleau, P.;Choi, T.;Riedi, S.;Heinzel, T.;Shorubalko, I.;Ihn, T.;Ensslin, K.;
12:48:18 Mechanical properties of individual InAs nanowires studied by tensile tests
DOI:10.1063/1.4868133 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Li, X.;Wei, X. L.;Xu, T. T.;Ning, Z. Y.;Shu, J. P.;Wang, X. Y.;Pan, D.;Zhao, J. H.;Yang, T.;Chen, Q.;
12:48:19 Signature of Snaking States in the Conductance of Core-Shell Nanowires
DOI:10.1021/nl503499w JN:NANO LETTERS PY:2015
TC:1 AU: Rosdahl, Tomas Orn;Manolescu, Andrei;Gudmundsson, Vidar;
12:48:20 Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors
DOI:10.1016/j.jcrysgro.2012.02.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Akabori, Masashi;Murakami, Tatsuya;Yamada, Syoji;
12:48:21 Fabrication and characterization of a delta-dope InAs/InP core shell nanowire transistor
DOI:10.1016/j.jcrysgro.2012.12.076 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Cui, Zhixin;Ishikura, Tomotsugu;Jabeen, Fauzia;Harmand, J. -C.;Yoh, Kanji;
12:48:22 Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
DOI:10.1103/PhysRevB.83.245401 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Ahola-Tuomi, M.;Punkkinen, M. P. J.;Laukkanen, P.;Kuzmin, M.;Lang, J.;Schulte, K.;Pietzsch, A.;Perala, R. E.;Rasanen, N.;Vayrynen, I. J.;
12:48:23 Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
DOI:10.1007/s00339-010-5804-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:1 AU: Volk, C.;Schubert, J.;Weis, K.;Hernandez, S. Estevez;Akabori, M.;Sladek, K.;Hardtdegen, H.;Schaepers, T.;
12:48:24 Evolution of Raman spectra in n-InAs wafer with annealing temperature
DOI:10.1016/j.apsusc.2013.09.095 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Deng, H. Y.;Guo, J. H.;Zhang, Y.;Cong, R.;Hu, G. J.;Yu, G. L.;Dai, N.;
12:48:25 Hall effect in nanowires
DOI:10.1063/1.4884681 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Fernandes, C.;Ruda, H. E.;Shik, A.;
12:49:1 Inhibition, Enhancement, and Control of Spontaneous Emission in Photonic Nanowires
DOI:10.1103/PhysRevLett.106.103601 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:62 AU: Bleuse, Joel;Claudon, Julien;Creasey, Megan;Malik, Nitin. S.;Gerard, Jean-Michel;Maksymov, Ivan;Hugonin, Jean-Paul;Lalanne, Philippe;
12:49:2 Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides
DOI:10.1063/1.3694935 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Bulgarini, Gabriele;Reimer, Michael E.;Zehender, Tilman;Hocevar, Moira;Bakkers, Erik P. A. M.;Kouwenhoven, Leo P.;Zwiller, Valery;
12:49:3 Ultraclean Emission from InAsP Quantum Dots in Defect-Free Wurtzite InP Nanowires
DOI:10.1021/nl303327h JN:NANO LETTERS PY:2012
TC:21 AU: Dalacu, Dan;Mnaymneh, Khaled;Lapointe, Jean;Wu, Xiaohua;Poole, Philip J.;Bulgarini, Gabriele;Zwiller, Val;Reimer, Michael E.;
12:49:4 Single photon emission from positioned GaAs/AlGaAs photonic nanowires
DOI:10.1063/1.3440967 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Heinrich, J.;Huggenberger, A.;Heindel, T.;Reitzenstein, S.;Hoefling, S.;Worschech, L.;Forchel, A.;
12:49:5 Position controlled nanowires for infrared single photon emission
DOI:10.1063/1.3506499 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Dorenbos, S. N.;Sasakura, H.;van Kouwen, M. P.;Akopian, N.;Adachi, S.;Namekata, N.;Jo, M.;Motohisa, J.;Kobayashi, Y.;Tomioka, K.;Fukui, T.;Inoue, S.;Kumano, H.;Natarajan, C. M.;Hadfield, R. H.;Zijlstra, T.;Klapwijk, T. M.;Zwiller, V.;Suemune, I.;
12:49:6 Homogeneous Array of Nanowire-Embedded Quantum Light Emitters
DOI:10.1021/nl303075q JN:NANO LETTERS PY:2013
TC:14 AU: Makhonin, M. N.;Foster, A. P.;Krysa, A. B.;Fry, P. W.;Davies, D. G.;Grange, T.;Walther, T.;Skolnick, M. S.;Wilsont, L. R.;
12:49:7 Self-Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics
DOI:10.1002/adma.201304501 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Yu, Ying;Dou, Xiu-Ming;Wei, Bin;Zha, Guo-Wei;Shang, Xiang-Jun;Wang, Li;Su, Dan;Xu, Jian-Xing;Wang, Hai-Yan;Ni, Hai-Qiao;Sun, Bao-Quan;Ji, Yuan;Han, Xiao-Dong;Niu, Zhi-Chuan;
12:49:8 Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
DOI:10.1063/1.4731208 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Tatebayashi, J.;Ota, Y.;Ishida, S.;Nishioka, M.;Iwamoto, S.;Arakawa, Y.;
12:49:9 Nanoskiving Core-Shell Nanowires: A New Fabrication Method for Nano-optics
DOI:10.1021/nl403552q JN:NANO LETTERS PY:2014
TC:5 AU: Watson, Douglas C.;Martinez, Ramses V.;Fontana, Yannik;Russo-Averchi, Eleonora;Heiss, Martin;Fontcuberta i Morral, Anna;Whitesides, George M.;Loncar, Marko;
12:49:10 Single- and few-particle states in core-shell nanowire quantum dots
DOI:10.1103/PhysRevB.86.205318 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Khoshnegar, M.;Majedi, A. H.;
12:49:11 Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots in nanowires
DOI:10.1063/1.3600777 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Dalacu, Dan;Mnaymneh, Khaled;Wu, Xiaohua;Lapointe, Jean;Aers, Geof C.;Poole, Philip J.;Williams, Robin L.;
12:49:12 Far field emission profile of pure wurtzite InP nanowires
DOI:10.1063/1.4901437 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bulgarini, Gabriele;Dalacu, Dan;Poole, Philip J.;Lapointe, Jean;Reimer, Michael E.;Zwiller, Val;
12:49:13 Polarization Entangled Photons from Quantum Dots Embedded in Nanowires
DOI:10.1021/nl503581d JN:NANO LETTERS PY:2014
TC:6 AU: Huber, Tobias;Predojevic, Ana;Khoshnegar, Milad;Dalacu, Dan;Poole, Philip J.;Majedi, Hamed;Weihs, Gregor;
12:49:14 Nanowire Waveguides Launching Single Photons in a Gaussian Mode for Ideal Fiber Coupling
DOI:10.1021/nl501648f JN:NANO LETTERS PY:2014
TC:9 AU: Bulgarini, Gabriele;Reimer, Michael E.;Bavinck, Maaike Bouwes;Jons, Klaus D.;Dalacu, Dan;Poole, Philip J.;Bakkers, Erik P. A. M.;Zwiller, Val;
12:49:15 Mode Profiling of Semiconductor Nanowire Lasers
DOI:10.1021/acs.nanolett.5b01713 JN:NANO LETTERS PY:2015
TC:0 AU: Saxena, Dhruv;Wang, Fan;Gao, Qian;Mokkapati, Sudha;Tan, Hark Hoe;Jagadish, Chennupati;
12:49:16 Linearly Polarized Emission from an Embedded Quantum Dot Using Nanowire Morphology Control
DOI:10.1021/nl503933n JN:NANO LETTERS PY:2015
TC:0 AU: Foster, Andrew P.;Bradley, John P.;Gardner, Kirsty;Krysa, Andrey B.;Royall, Ben;Skolnick, Maurice S.;Wilson, Luke R.;
12:49:17 Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
DOI:10.1063/1.4895597 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tatebayashi, J.;Ota, Y.;Ishida, S.;Nishioka, M.;Iwamoto, S.;Arakawa, Y.;
12:49:18 Optical polarization properties of a nanowire quantum dot probed along perpendicular orientations
DOI:10.1063/1.4752453 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Bulgarini, Gabriele;Reimer, Michael E.;Zwiller, Val;
12:49:19 Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.11.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Tatebayashi, J.;Ota, Y.;Ishida, S.;Nishioka, M.;Iwamoto, S.;Arakawa, Y.;
12:49:20 Strain-driven synthesis of self-catalyzed branched GaAs nanowires
DOI:10.1063/1.4803028 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Zha, Guowei;Li, Mifeng;Yu, Ying;Wang, Lijuan;Xu, Jianxing;Shang, Xiangjun;Ni, Haiqiao;Niu, Zhichuan;
12:49:21 Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals
DOI:10.1063/1.4768437 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Birowosuto, Muhammad Danang;Yokoo, Atsushi;Taniyama, Hideaki;Kuramochi, Eiichi;Takiguchi, Masato;Notomi, Masaya;
12:49:22 Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots
DOI:10.1063/1.3669507 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Gong, Ming;Zhang, Weiwei;Guo, Guang Can;He, Lixin;
12:49:23 Position-controlled InP nanowires with 10-100 mu m pitches using Au-deposited SiO2/InP patterned substrates
DOI:10.1063/1.4865260 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Kawaguchi, Kenichi;Sudo, Hisao;Matsuda, Manabu;Ekawa, Mitsuru;Yamamoto, Tsuyoshi;Arakawa, Yasuhiko;
12:49:24 Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy
DOI:10.1088/0957-4484/23/6/065706 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Yu, Ying;Li, Mi-Feng;He, Ji-Fang;Zhu, Yan;Wang, Li-Juan;Ni, Hai-Qiao;He, Zhen-Hong;Niu, Zhi-Chuan;
12:49:25 Far-Field Emission Patterns of Nanowire Light-Emitting Diodes
DOI:10.1021/nl501438r JN:NANO LETTERS PY:2014
TC:1 AU: Motohisa, Junichi;Kohashi, Yoshinori;Maeda, Satoshi;
12:50:1 Three-Dimensional Nanobranched Indium-Tin-Oxide Anode for Organic Solar Cells
DOI:10.1021/nn2025836 JN:ACS NANO PY:2011
TC:36 AU: Yu, Hak Ki;Dong, Wan Jae;Jung, Gwan Ho;Lee, Jong-Lam;
12:50:2 Epitaxy-Enabled Vapor-Liquid-Solid Growth of Tin-Doped Indium Oxide Nanowires with Controlled Orientations
DOI:10.1021/nl501163n JN:NANO LETTERS PY:2014
TC:4 AU: Shen, Youde;Turner, Stuart;Yang, Ping;Van Tendeloo, Gustaaf;Lebedev, Oleg I.;Wu, Tom;
12:50:3 UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires
DOI:10.1088/0957-4484/22/19/195706 JN:NANOTECHNOLOGY PY:2011
TC:53 AU: Gao, J.;Chen, R.;Li, D. H.;Jiang, L.;Ye, J. C.;Ma, X. C.;Chen, X. D.;Xiong, Q. H.;Sun, H. D.;Wu, T.;
12:50:4 Impact of Preferential Indium Nucleation on Electrical Conductivity of Vapor-Liquid-Solid Grown Indium-Tin Oxide Nanowires
DOI:10.1021/ja401926u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:9 AU: Meng, Gang;Yanagida, Takeshi;Nagashima, Kazuki;Yoshida, Hideto;Kanai, Masaki;Klamchuen, Annop;Zhuge, Fuwei;He, Yong;Rahong, Sakon;Fang, Xiaodong;Takeda, Seiji;Kawai, Tomoji;
12:50:5 Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
DOI:10.1063/1.4901295 JN:APL MATERIALS PY:2014
TC:2 AU: Karageorgou, E.;Zervos, M.;Othonos, A.;
12:50:6 Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
DOI:10.1021/nl2035089 JN:NANO LETTERS PY:2012
TC:14 AU: Gao, Jing;Lebedev, Oleg I.;Turner, Stuart;Li, Yong Feng;Lu, Yun Hao;Feng, Yuan Ping;Boullay, Philippe;Prellier, Wilfrid;van Tendeloo, Gustaaf;Wu, Tom;
12:50:7 Nanorod based Schottky contact gas sensors in reversed bias condition
DOI:10.1088/0957-4484/21/26/265502 JN:NANOTECHNOLOGY PY:2010
TC:44 AU: Yu, J.;Ippolito, S. J.;Wlodarski, W.;Strano, M.;Kalantar-zadeh, K.;
12:50:8 Formation of Planar Arrays of One-Dimensional p-n Heterojunctions Using Surface-Directed Growth of Nanowires and Nanowalls
DOI:10.1021/nn1019972 JN:ACS NANO PY:2010
TC:20 AU: Nikoobakht, Babak;Herzing, Andrew;
12:50:9 Metal-layer-assisted coalescence of Au nanoparticles and its effect on diameter control in vapor-liquid-solid growth of oxide nanowires
DOI:10.1103/PhysRevB.83.045403 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Guo, Dong Lai;Huang, Xiao;Xing, Guo Zhong;Zhang, Zhou;Li, Gong Ping;He, Mi;Zhang, Hua;Chen, Hongyu;Wu, Tom;
12:50:10 Guided Growth of Horizontal ZnO Nanowires with Controlled Orientations on Flat and Faceted Sapphire Surfaces
DOI:10.1021/nn3020695 JN:ACS NANO PY:2012
TC:25 AU: Tsivion, David;Schvartzman, Mark;Popovitz-Biro, Ronit;Joselevich, Ernesto;
12:50:11 Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties
DOI:10.1063/1.3624331 JN:AIP ADVANCES PY:2011
TC:8 AU: Chang, Li-Wei;Chang, Jan-Hau;Yeh, Jien-Wei;Lin, Heh-Nan;Shih, Han C.;
12:50:12 Outstanding gas-sensing performance of graphene/SnO2 nanowire Schottky junctions
DOI:10.1063/1.4887486 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Vu Van Quang;Nguyen Van Dung;Ngo Sy Trong;Nguyen Duc Hoa;Nguyen Van Duy;Nguyen Van Hieu;
12:50:13 CrSi2 Hexagonal Nanowebs
DOI:10.1021/ja106402p JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:17 AU: Wang, Huatao;Wu, Jian-Chun;Shen, Yiqiang;Li, Gongping;Zhang, Zhou;Xing, Guozhong;Guo, Donglai;Wang, Dandan;Dong, Zhili;Wu, Tom;
12:50:14 Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks
DOI:10.1007/s00339-014-8639-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Wu, Xu;Wang, Yihua;Yang, Bin;
12:50:15 Vapor-Liquid-Solid Growth of Endotaxial Semiconductor Nanowires
DOI:10.1021/nl3025196 JN:NANO LETTERS PY:2012
TC:7 AU: Li, Shaozhou;Huang, Xiao;Liu, Qing;Cao, Xiehong;Huo, Fengwei;Zhang, Hua;Gan, Chee Lip;
12:50:16 Formation of complex nanostructures driven by polar surfaces
DOI:10.1039/c1jm12417j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:6 AU: Wang, Huatao;Wu, Tom;
12:50:17 Understanding Self-Aligned Planar Growth of InAs Nanowires
DOI:10.1021/nl4010332 JN:NANO LETTERS PY:2013
TC:9 AU: Zi, Yunlong;Jung, Kyooho;Zakharov, Dmitri;Yang, Chen;
12:50:18 Guided Growth of Horizontal GaN Nanowires on Quartz and Their Transfer to Other Substrates
DOI:10.1021/nn4066523 JN:ACS NANO PY:2014
TC:2 AU: Goren-Ruck, Lior;Tsivion, David;Schvartzman, Mark;Popovitz-Biro, Ronit;Joselevich, Ernesto;
12:50:19 Controllable two-step growth and photoluminescence of waterweed-like SnO2 nanowires
DOI:10.1016/j.apsusc.2013.04.063 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Chang, Li-Wei;Huang, Meng-Wen;Li, Chung-Tien;Shih, Han C.;
12:50:20 Density-Controlled Synthesis of Uniform ZnO Nanowires: Wide-Range Tunability and Growth Regime Transition
DOI:10.1002/smll.201201369 JN:SMALL PY:2013
TC:4 AU: Guo, Dong Lai;Tan, Li Huey;Wei, Zhi Peng;Chen, Hongyu;Wu, Tom;
12:50:21 Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
DOI:10.1063/1.4875457 JN:APL MATERIALS PY:2014
TC:4 AU: Zervos, M.;Mihailescu, C. N.;Giapintzakis, J.;Luculescu, C. R.;Florini, N.;Komninou, Ph.;Kioseoglou, J.;Othonos, A.;
12:50:22 Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures
DOI:10.1016/j.apsusc.2012.12.149 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Pan, Ko-Ying;Lin, Liang-Da;Chang, Li-Wei;Shih, Han C.;
12:50:23 A systematic study of the nitridation of SnO2 nanowires grown by the vapor liquid solid mechanism
DOI:10.1016/j.jcrysgro.2011.11.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Zervos, Matthew;Othonos, Andreas;
12:50:24 Guided Growth of Epitaxially Coherent GaN Nanowires on SiC
DOI:10.1021/nl4030769 JN:NANO LETTERS PY:2013
TC:5 AU: Tsivion, David;Joselevich, Ernesto;
12:50:25 Aligned Epitaxial SnO2 Nanowires on Sapphire: Growth and Device Applications
DOI:10.1021/nl404289z JN:NANO LETTERS PY:2014
TC:14 AU: Wang, Xiaoli;Aroonyadet, Noppadol;Zhang, Yuzheng;Meckenburg, Matthew;Fang, Xin;Chen, Haitian;Goo, Edward;Zhou, Chongwu;
12:50:26 Self-Assembled In-Plane Growth of Mg2SiO4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles
DOI:10.1002/adfm.201000442 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:15 AU: Zhang, Zhou;Wong, Lai Mun;Wang, Hou Xiao;Wei, Zhi Peng;Zhou, Wei;Wang, Shi Jie;Wu, Tom;
12:50:27 Carrier dynamics in beta-Ga2O3 nanowires
DOI:10.1063/1.3520589 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Othonos, Andreas;Zervos, Matthew;Christofides, Constantinos;
12:50:28 The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires
DOI:10.1088/0957-4484/22/28/285712 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Park, Kyung-Soo;Choi, Young-Jin;Kang, Jin-Gu;Sung, Yun-Mo;Park, Jae-Gwan;
12:50:29 Shape-Controlled Fabrication of Micro/Nanoscale Triangle, Square, Wire-like, and Hexagon Pits on Silicon Substrates Induced by Anisotropic Diffusion and Silicide Sublimation
DOI:10.1021/nn1000996 JN:ACS NANO PY:2010
TC:9 AU: Wang, Huatao;Zhang, Zhou;Wong, Lai Mun;Wang, Shijie;Wei, Zhipeng;Li, Gong Ping;Xing, Guozhong;Guo, Donglai;Wang, Dandan;Wu, Tom;
12:50:30 Ultrafast transient spectroscopy and photoluminescence properties of V2O5 nanowires
DOI:10.1063/1.4823506 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Othonos, Andreas;Christofides, Constantinos;Zervos, Matthew;
12:50:31 Density-controllable growth of SnO2 nanowire junction-bridging across electrode for low-temperature NO2 gas detection
DOI:10.1007/s10853-013-7545-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:5 AU: Dang Thi Thanh Le;Nguyen Van Duy;Ha Minh Tan;Do Dang Trung;Nguyen Ngoc Trung;Phung Thi Hong Van;Nguyen Duc Hoa;Nguyen Van Hieu;
12:50:32 Effect of the doped nitrogen on the optical properties of beta-Ga2O3 nanowires
DOI:10.1016/j.matlet.2011.04.036 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Chang, Li-Wei;Lu, Ting-Yu;Chen, Yan-Li;Yeh, Jien-Wei;Shih, Han C.;
12:50:33 Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal
DOI:10.1063/1.3683493 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Kellermann, Guinther;Montoro, Luciano A.;Giovanetti, Lisandro J.;dos Santos Claro, Paula C.;Zhang, Liang;Ramirez, Antonio J.;Requejo, Felix G.;Craievich, Aldo F.;
12:50:34 Enhanced optoelectronic performance from the Ti-doped ZnO nanowires
DOI:10.1063/1.3554686 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Chang, Li-Wei;Sung, Yung-Chiao;Yeh, Jien-Wei;Shih, Han C.;
12:50:35 Sequential physical vapor deposition and chemical vapor deposition for the growth of In2O3-SnO2 radial and longitudinal heterojunctions
DOI:10.1016/j.apsusc.2014.07.177 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Vomiero, Alberto;Ferroni, Matteo;Natile, Marta Maria;Fischer, Thomas;Fiz, Raquel;Mathur, Sanjay;Sberveglieri, Giorgio;
12:50:36 Sn doped In2O3 nanowires for enhanced photocurrent generation for photoelectrodes
DOI:10.1016/j.ceramint.2014.03.186 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Park, Kyung-Soo;Lee, Chan Gi;Hong, Hyun Seon;Lee, Il Seuk;Kwon, S. Joon;Park, Jae-Gwan;
12:50:37 Synthesis and characterization of hierarchical SnO2 hollow octahedra
DOI:10.1016/j.matlet.2013.09.058 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Yin, Jingzhou;Wang, Xinfeng;Li, Rongqing;Wang, Guangchang;Zhang, Weiguang;
12:51:1 Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires
DOI:10.1021/nl200981x JN:NANO LETTERS PY:2011
TC:42 AU: Wong, Bryan M.;Leonard, Francois;Li, Qiming;Wang, George T.;
12:51:2 Optical, Structural, and Numerical Investigations of GaAs/AlGaAs Core-Multishell Nanowire Quantum Well Tubes
DOI:10.1021/nl304182j JN:NANO LETTERS PY:2013
TC:29 AU: Fickenscher, Melodie;Shi, Teng;Jackson, Howard E.;Smith, Leigh M.;Yarrison-Rice, Jan M.;Zheng, Changlin;Miller, Peter;Etheridge, Joanne;Wong, Bryan M.;Gao, Qiang;Deshpande, Shriniwas;Tan, Hark Hoe;Jagadish, Chennupati;
12:51:3 Electron and hole gas in modulation-doped GaAs/Al1-xGaxAs radial heterojunctions
DOI:10.1103/PhysRevB.84.205323 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Bertoni, Andrea;Royo, Miquel;Mahawish, Farah;Goldoni, Guido;
12:51:4 High Mobility One- and Two-Dimensional Electron Systems in Nanowire-Based Quantum Heterostructures
DOI:10.1021/nl403561w JN:NANO LETTERS PY:2013
TC:13 AU: Funk, Stefan;Royo, Miguel;Zardo, Ilaria;Rudolph, Daniel;Morkoetter, Stefanie;Mayer, Benedikt;Becker, Jonathan;Bechtold, Alexander;Matich, Sonja;Doeblinger, Markus;Bichler, Max;Koblmueller, Gregor;Finley, Jonathan J.;Bertoni, Andrea;Goldoni, Guido;Abstreiter, Gerhard;
12:51:5 Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core-Multishell Nanowire
DOI:10.1021/nl500818k JN:NANO LETTERS PY:2014
TC:9 AU: Jadczak, J.;Plochocka, P.;Mitioglu, A.;Breslavetz, I.;Royo, M.;Bertoni, A.;Goldoni, G.;Smolenski, T.;Kossacki, P.;Kretinin, A.;Shtrikman, Hadas;Maude, D. K.;
12:51:6 MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
DOI:10.1016/j.jcrysgro.2009.11.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:20 AU: Sladek, K.;Klinger, V.;Wensorra, J.;Akabori, M.;Hardtdegen, H.;Gruetzmacher, D.;
12:51:7 Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors
DOI:10.1021/acs.nanolett.5b00518 JN:NANO LETTERS PY:2015
TC:1 AU: Morkoetter, S.;Jeon, N.;Rudolph, D.;Loitsch, B.;Spirkoska, D.;Hoffmann, E.;Doeblinger, M.;Matich, S.;Finley, J. J.;Lauhon, L. J.;Abstreiter, G.;Koblmueller, G.;
12:51:8 Nano-X-ray Absorption Spectroscopy of Single Co-Implanted ZnO Nanowires
DOI:10.1021/nl202799e JN:NANO LETTERS PY:2011
TC:25 AU: Segura-Ruiz, J.;Martinez-Criado, G.;Chu, M. H.;Geburt, S.;Ronning, C.;
12:51:9 Emergence of Localized States in Narrow GaAs/AlGaAs Nanowire Quantum Well Tubes
DOI:10.1021/nl5046878 JN:NANO LETTERS PY:2015
TC:2 AU: Shi, Teng;Jackson, Howard E.;Smith, Leigh M.;Jiang, Nian;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Zheng, Changlin;Etheridge, Joanne;
12:51:10 Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires
DOI:10.1103/PhysRevB.87.115316 JN:PHYSICAL REVIEW B PY:2013
TC:5 AU: Royo, Miquel;Bertoni, Andrea;Goldoni, Guido;
12:51:11 Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution
DOI:10.1021/nl502156h JN:NANO LETTERS PY:2014
TC:3 AU: Martinez-Criado, Gema;Segura-Ruiz, Jaime;Chu, Manh-Hung;Tucoulou, Remi;Lopez, Inaki;Nogales, Emilio;Mendez, Bianchi;Piqueras, Javier;
12:51:12 Phase Separation in Single InxGa1-xN Nanowires Revealed through a Hard X-ray Synchrotron Nanoprobe
DOI:10.1021/nl4042752 JN:NANO LETTERS PY:2014
TC:6 AU: Segura-Ruiz, J.;Martinez-Criado, G.;Denker, C.;Malindretos, J.;Rizzi, A.;
12:51:13 Exploring Single Semiconductor Nanowires with a Multimodal Hard X-ray Nanoprobe
DOI:10.1002/adma.201304345 JN:ADVANCED MATERIALS PY:2014
TC:0 AU: Martinez-Criado, Gema;Segura-Ruiz, Jaime;Alen, Benito;Eymery, Joel;Rogalev, Andrei;Tucoulou, Remi;Homs, Alejandro;
12:51:14 Symmetries in the collective excitations of an electron gas in core-shell nanowires
DOI:10.1103/PhysRevB.89.155416 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Royo, Miquel;Bertoni, Andrea;Goldoni, Guido;
12:51:15 Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires
DOI:10.1063/1.3574026 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Lucot, D.;Jabeen, F.;Harmand, J. -C.;Patriarche, G.;Giraud, R.;Faini, G.;Mailly, D.;
12:51:16 Probing Quantum Confinement within Single Core-Multishell Nanowires
DOI:10.1021/nl303178u JN:NANO LETTERS PY:2012
TC:11 AU: Martinez-Criado, Gema;Homs, Alejandro;Alen, Benito;Sans, Juan A.;Segura-Ruiz, Jaime;Molina-Sanchez, Alejandro;Susini, Jean;Yoo, Jinkyoung;Yi, Gyu-Chul;
12:51:17 Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces
DOI:10.1063/1.4878918 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, Huijie;Zhao, Guijuan;Liu, Guipeng;Wei, Hongyuan;Jiao, Chunmei;Yang, Shaoyan;Wang, Lianshan;Zhu, Qinsheng;
12:51:18 PAMELA: An open-source software package for calculating nonlocal exact exchange effects on electron gases in core-shell nanowires
DOI:10.1063/1.4754603 JN:AIP ADVANCES PY:2012
TC:8 AU: Long, Andrew W.;Wong, Bryan M.;
12:51:19 Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires
DOI:10.1063/1.3678639 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Wirths, S.;Mikulics, M.;Heintzmann, P.;Winden, A.;Weis, K.;Volk, Ch.;Sladek, K.;Demarina, N.;Hardtdegen, H.;Gruetzmacher, D.;Schaepers, Th.;
12:51:20 Synchrotron nanoimaging of single In-rich InGaN nanowires
DOI:10.1063/1.4795544 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Segura-Ruiz, J.;Martinez-Criado, G.;Chu, M. H.;Denker, C.;Malindretos, J.;Rizzi, A.;
12:51:21 Local lattice distortions in single Co-implanted ZnO nanowires
DOI:10.1063/1.4824117 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Chu, M. H.;Martinez-Criado, G.;Segura-Ruiz, J.;Geburt, S.;Ronning, C.;
12:51:22 Multi-particle states of semiconductor hexagonal rings: Artificial benzene
DOI:10.1063/1.4766444 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Ballester, Ana;Planelles, Josep;Bertoni, Andrea;
12:51:23 Phase coherent transport in GaAs/AlGaAs core-shell nanowires
DOI:10.1016/j.jcrysgro.2012.12.146 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Lucot, Damien;Jabeen, Fauzia;Ramdani, Mohammed R.;Patriarche, Gilles;Faini, Giancarlo;Mailly, Dominique;Harmand, Jean-Christophe;
12:51:24 Electronic structure and optical absorption of GaAs/AlxGa1-xAs and AlxGa1-xAs/GaAs core-shell nanowires
DOI:10.1103/PhysRevB.82.235425 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Kishore, V. V. Ravi;Partoens, B.;Peeters, F. M.;
12:51:25 Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
DOI:10.1016/j.jcrysgro.2010.09.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Hayashida, Atsushi;Sato, Takuya;Hara, Shinjiro;Motohisa, Junichi;Hiruma, Kenji;Fukui, Takashi;
12:51:26 Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range
DOI:10.1016/j.mseb.2013.01.022 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:5 AU: Zhao, M.;Liu, X. Y.;Zheng, Y. K.;Li, Yankui;Ouyang, Sihua;
12:51:27 Synthesis and characterization of silicon-doped gallium oxide nanowires for optoelectronic UV applications
DOI:10.1007/s11051-011-0370-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:8 AU: Diaz, Joaquin;Lopez, Inaki;Nogales, Emilio;Mendez, Bianchi;Piqueras, Javier;
12:51:28 Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures
DOI:10.1103/PhysRevB.87.165428 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Steinke, L.;Cantwell, P.;Stach, E.;Schuh, D.;Fontcuberta i Morral, A.;Bichler, M.;Abstreiter, G.;Grayson, M.;
12:52:1 Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles
DOI:10.1063/1.3552968 JN:APPLIED PHYSICS LETTERS PY:2011
TC:50 AU: Cho, Chu-Young;Lee, Sang-Jun;Song, Jung-Hoon;Hong, Sang-Hyun;Lee, Song-Mae;Cho, Yong-Hoon;Park, Seong-Ju;
12:52:2 Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN
DOI:10.1088/0957-4484/21/20/205201 JN:NANOTECHNOLOGY PY:2010
TC:53 AU: Cho, Chu-Young;Kwon, Min-Ki;Lee, Sang-Jun;Han, Sang-Heon;Kang, Jang-Won;Kang, Se-Eun;Lee, Dong-Yul;Park, Seong-Ju;
12:52:3 Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes
DOI:10.1063/1.3658392 JN:APPLIED PHYSICS LETTERS PY:2011
TC:31 AU: Zhang, S. G.;Zhang, X. W.;Yin, Z. G.;Wang, J. X.;Dong, J. J.;Gao, H. L.;Si, F. T.;Sun, S. S.;Tao, Y.;
12:52:4 Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN
DOI:10.1063/1.3616149 JN:APPLIED PHYSICS LETTERS PY:2011
TC:33 AU: Cho, Chu-Young;Kim, Ki Seok;Lee, Sang-Jun;Kwon, Min-Ki;Ko, Hyungduk;Kim, Sung-Tae;Jung, Gun-Young;Park, Seong-Ju;
12:52:5 Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon
DOI:10.1063/1.4736261 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Zhang, S. G.;Zhang, X. W.;Yin, Z. G.;Wang, J. X.;Si, F. T.;Gao, H. L.;Dong, J. J.;Liu, X.;
12:52:6 Practicable alleviation of efficiency droop effect using surface plasmon coupling in GaN-based light emitting diodes
DOI:10.1063/1.4811757 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Yang, Wei;He, Yongfa;Liu, Lei;Hu, Xiaodong;
12:52:7 Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light-Emitting Diodes by Ag and Ag/SiO2 Nanoparticles
DOI:10.1002/adfm.201103161 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:23 AU: Jang, Lee-Woon;Jeon, Dae-Woo;Kim, Myoung;Jeon, Ju-Won;Polyakov, Alexander Y.;Ju, Jin-Woo;Lee, Seung-Jae;Baek, Jong-Hyeob;Yang, Jin-Kyu;Lee, In-Hwan;
12:52:8 Stable surface plasmon enhanced ZnO homojunction light-emitting devices
DOI:10.1039/c2tc00154c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:15 AU: Shen, He;Shan, Chong-Xin;Qiao, Qian;Liu, Ji-Shan;Li, Bing-Hui;Shen, De-Zhen;
12:52:9 Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer
DOI:10.1063/1.4757127 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Liu, W. Z.;Xu, H. Y.;Zhang, L. X.;Zhang, C.;Ma, J. G.;Wang, J. N.;Liu, Y. C.;
12:52:10 Localized surface plasmon enhanced light-emitting devices
DOI:10.1039/c2jm30439b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Qiao, Qian;Shan, Chong-Xin;Zheng, Jian;Li, Bing-Hui;Zhang, Zhen-Zhong;Zhang, Li-Gong;Shen, De-Zhen;
12:52:11 Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling
DOI:10.1063/1.3459151 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Lu, Chih-Feng;Liao, Che-Hao;Chen, Chih-Yen;Hsieh, Chieh;Kiang, Yean-Woei;Yang, C. C.;
12:52:12 Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles
DOI:10.1016/j.jallcom.2013.09.164 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Lu, Cheng-Hsueh;Wu, Shang-En;Lai, Yen-Lin;Li, Yun-Li;Liu, Chuan-Pu;
12:52:13 Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes
DOI:10.1063/1.4882179 JN:AIP ADVANCES PY:2014
TC:0 AU: Wei, Tongbo;Wu, Kui;Lan, Ding;Sun, Bo;Zhang, Yonghui;Chen, Yu;Huo, Ziqiang;Hu, Qiang;Wang, Junxi;Zeng, Yiping;Li, Jinmin;
12:52:14 Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes
DOI:10.1063/1.4819963 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Li, Yi;Zhang, Rong;Xie, Zili;Liu, Bin;Chen, Peng;Zhang, Guogang;Tao, Tao;Zhuang, Zhe;Zhi, Ling;Gan, Tiansheng;Zheng, Youdou;
12:52:15 Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes
DOI:10.1063/1.4886223 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Li, Yi;Zhang, Rong;Liu, Bin;Xie, Zili;Zhang, Guogang;Tao, Tao;Zhuang, Zhe;Zhi, Ting;Zheng, Youdou;
12:52:16 Enhanced Light Output of Dipole Source in GaN-Based Nanorod Light-Emitting Diodes by Silver Localized Surface Plasmon
DOI:10.1155/2014/180765 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Huang, Huamao;Hu, Haiying;Wang, Hong;Geng, Kuiwei;
12:52:17 Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
DOI:10.1063/1.4809521 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Cho, Chu-Young;Zhang, Yinjun;Cicek, Erdem;Rahnema, Benjamin;Bai, Yanbo;McClintock, Ryan;Razeghi, Manijeh;
12:52:18 Fabrication of surface metal nanoparticles and their induced surface plasmon coupling with subsurface InGaN/GaN quantum wells
DOI:10.1088/0957-4484/22/47/475201 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Huang, Che-Wei;Tseng, Hung-Yu;Chen, Chih-Yen;Liao, Che-Hao;Hsieh, Chieh;Chen, Kuan-Yu;Lin, Hung-Yu;Chen, Horng-Shyang;Jung, Yu-Lung;Kiang, Yean-Woei;Yang, C. C.;
12:52:19 Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
DOI:10.1063/1.3457349 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Sung, Jun-Ho;Yang, Jeong Su;Kim, Bo-Soon;Choi, Chul-Hyun;Lee, Min-Woo;Lee, Seung-Gol;Park, Se-Geun;Lee, El-Hang;O, Beom-Hoan;
12:52:20 Surface plasmon coupling with a radiating dipole near a Ag nanoparticle embedded in GaN
DOI:10.1063/1.4803042 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Kuo, Yang;Chang, Wen-Yen;Chen, Horng-Shyang;Kiang, Yean-Woei;Yang, C. C.;
12:52:21 Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN
DOI:10.1063/1.4789995 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Chen, Horng-Shyang;Chen, Chia-Feng;Kuo, Yang;Chou, Wang-Hsien;Shen, Chen-Hung;Jung, Yu-Lung;Kiang, Yean-Woei;Yang, C. C.;
12:52:22 Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles
DOI:10.1063/1.4895692 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Chun-Han;Su, Chia-Ying;Kuo, Yang;Chen, Chung-Hui;Yao, Yu-Feng;Shih, Pei-Ying;Chen, Horng-Shyang;Hsieh, Chieh;Kiang, Yean-Woei;Yang, C. C.;
12:52:23 Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling
DOI:10.1063/1.3517082 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Shen, Kun-Ching;Liao, Che-Hao;Yu, Zan-Yao;Wang, Jyh-Yang;Lin, Cheng-Hung;Kiang, Yean-Woei;Yang, C. C.;
12:52:24 Shape designing for light extraction enhancement bulk-GaN light-emitting diodes
DOI:10.1063/1.4812464 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Sun, Bo;Zhao, Lixia;Wei, Tongbo;Yi, Xiaoyan;Liu, Zhiqiang;Wang, Guohong;Li, Jinmin;
12:52:25 Band-gap-dependent emissions from conjugated polymers coupled silver nanocap array
DOI:10.1063/1.3667195 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Kong, Fan;Zhang, Xueqin;Lang, Xianzhong;Lin, Baoping;Yang, Yimin;Qiu, Teng;
12:52:26 Enhanced emission efficiency of green InGaN/GaN multiple quantum wells by surface plasmon of Au nanoparticles
DOI:10.1016/j.jcrysgro.2012.09.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Kwon, Min-Ki;Kim, Ja-Yeon;Park, Seong-Ju;
12:52:27 Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy
DOI:10.1116/1.4895658 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Polyakov, Alexander Y.;Yakimov, Eugene B.;Smirnov, Nikolai B.;Govorkov, Anatoliy V.;Usikov, Alexander S.;Helava, Heikki;Makarov, Yuri N.;Lee, In-Hwan;
12:52:28 Amorphous carbon-based films with surface-plasmon-enhanced full-color photoluminescence
DOI:10.1016/j.jnoncrysol.2012.03.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Li, Zhe;Xu, Gang;Ren, Zhaohui;Zhang, Xiwen;Shen, Ge;Li, Xiang;Han, Gaorong;
12:52:29 Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition
DOI:10.1088/0957-4484/24/12/125705 JN:NANOTECHNOLOGY PY:2013
TC:10 AU: Lin, Ying;Liu, Xing Qiang;Wang, Ti;Chen, Chao;Wu, Hao;Liao, Lei;Liu, Chang;
12:52:30 The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining
DOI:10.1063/1.3456445 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Wang, X. H.;Lai, P. T.;Choi, H. W.;
12:52:31 Die singulation technologies for advanced packaging: A critical review
DOI:10.1116/1.3700230 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:10 AU: Lei, Wei-Sheng;Kumar, Ajay;Yalamanchili, Rao;
12:53:1 Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3446869 JN:APPLIED PHYSICS LETTERS PY:2010
TC:53 AU: Makaram, Prashanth;Joh, Jungwoo;del Alamo, Jesus A.;Palacios, Tomas;Thompson, Carl V.;
12:53:2 Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress
DOI:10.1063/1.3460529 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Tapajna, M.;Mishra, U. K.;Kuball, M.;
12:53:3 Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3663573 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Tapajna, M.;Kaun, S. W.;Wong, M. H.;Gao, F.;Palacios, T.;Mishra, U. K.;Speck, J. S.;Kuball, M.;
12:53:4 On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress
DOI:10.1063/1.4737904 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Montes Bajo, M.;Hodges, C.;Uren, M. J.;Kuball, M.;
12:53:5 The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4826524 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Choi, Sukwon;Heller, Eric;Dorsey, Donald;Vetury, Ramakrishna;Graham, Samuel;
12:53:6 Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
DOI:10.1063/1.3678041 JN:APPLIED PHYSICS LETTERS PY:2012
TC:32 AU: Meneghini, Matteo;Stocco, Antonio;Bertin, Marco;Marcon, Denis;Chini, Alessandro;Meneghesso, Gaudenzio;Zanoni, Enrico;
12:53:7 Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
DOI:10.1063/1.4867525 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Ma, Xiao-Hua;Chen, Wei-Wei;Hou, Bin;Zhang, Kai;Zhu, Jie-Jie;Zhang, Jin-Cheng;Zheng, Xue-Feng;Hao, Yue;
12:53:8 Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3665065 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Gao, Feng;Lu, Bin;Li, Libing;Kaun, Stephen;Speck, James S.;Thompson, Carl V.;Palacios, Tomas;
12:53:9 Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
DOI:10.1063/1.3693427 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Hodges, C.;Killat, N.;Kaun, S. W.;Wong, M. H.;Gao, F.;Palacios, T.;Mishra, U. K.;Speck, J. S.;Wolverson, D.;Kuball, M.;
12:53:10 Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3479917 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Meneghini, M.;Stocco, A.;Ronchi, N.;Rossi, F.;Salviati, G.;Meneghesso, G.;Zanoni, E.;
12:53:11 Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions
DOI:10.1063/1.3377004 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Roy, T.;Puzyrev, Y. S.;Tuttle, B. R.;Fleetwood, D. M.;Schrimpf, R. D.;Brown, D. F.;Mishra, U. K.;Pantelides, S. T.;
12:53:12 Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors
DOI:10.1063/1.3293008 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Puzyrev, Y. S.;Tuttle, B. R.;Schrimpf, R. D.;Fleetwood, D. M.;Pantelides, S. T.;
12:53:13 Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4813535 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Holzworth, M. R.;Rudawski, N. G.;Whiting, P. G.;Pearton, S. J.;Jones, K. S.;Lu, L.;Kang, T. S.;Ren, F.;Patrick, E.;Law, M. E.;
12:53:14 Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias
DOI:10.1063/1.4818450 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Ghassemi, H.;Lang, A.;Johnson, C.;Wang, R.;Song, B.;Phillips, P.;Qiao, Q.;Klie, R. F.;Xing, H. G.;Taheri, M. L.;
12:53:15 Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress
DOI:10.1063/1.4704393 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Hu, Cheng-Yu;Hashizume, Tamotsu;
12:53:16 Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
DOI:10.1063/1.3569715 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Holzworth, M. R.;Rudawski, N. G.;Pearton, S. J.;Jones, K. S.;Lu, L.;Kang, T. S.;Ren, F.;Johnson, J. W.;
12:53:17 Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
DOI:10.1063/1.4723848 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Meneghini, Matteo;Stocco, Antonio;Silvestri, Riccardo;Meneghesso, Gaudenzio;Zanoni, Enrico;
12:53:18 Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature
DOI:10.1063/1.4826324 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Zhu, C. Y.;Zhang, F.;Ferreyra, R. A.;Avrutin, V.;Oezguer, Ue.;Morkoc, H.;
12:53:19 Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
DOI:10.1063/1.4829062 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Killat, N.;Montes Bajo, M.;Paskova, T.;Evans, K. R.;Leach, J.;Li, X.;Oezguer, Ue;Morkoc, H.;Chabak, K. D.;Crespo, A.;Gillespie, J. K.;Fitch, R.;Kossler, M.;Walker, D. E.;Trejo, M.;Via, G. D.;Blevins, J. D.;Kuball, M.;
12:53:20 Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4881637 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Montes Bajo, M.;Sun, H.;Uren, M. J.;Kuball, M.;
12:53:21 Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4707163 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Li, Libing;Joh, Jungwoo;del Alamo, J. A.;Thompson, Carl V.;
12:53:22 Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3701164 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Marko, P.;Alexewicz, A.;Hilt, O.;Meneghesso, G.;Zanoni, E.;Wuerfl, J.;Strasser, G.;Pogany, D.;
12:53:23 Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
DOI:10.1063/1.3524185 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Puzyrev, Y. S.;Roy, T.;Beck, M.;Tuttle, B. R.;Schrimpf, R. D.;Fleetwood, D. M.;Pantelides, S. T.;
12:53:24 Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3491038 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:14 AU: Chang, Chih-Yang;Anderson, Travis;Hite, Jennifer;Lu, Liu;Lo, Chien-Fong;Chu, Byung-Hwan;Cheney, D. J.;Douglas, E. A.;Gila, B. P.;Ren, F.;Via, G. D.;Whiting, Patrick;Holzworth, R.;Jones, K. S.;Jang, Soohwan;Pearton, S. J.;
12:53:25 Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
DOI:10.1116/1.4766303 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:6 AU: Johnson, Michael R.;Cullen, David A.;Liu, Lu;Kang, Tsung Sheng;Ren, Fan;Chang, Chih-Yang;Pearton, Stephen J.;Jang, Soohwan;Johnson, Wayne J.;Smith, David J.;
12:53:26 Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale
DOI:10.1063/1.3521392 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Lin, Chung-Han;Doutt, D. R.;Mishra, U. K.;Merz, T. A.;Brillson, L. J.;
12:53:27 Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress
DOI:10.1063/1.4900750 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Wei-Wei;Ma, Xiao-Hua;Hou, Bin;Zhu, Jie-Jie;Chen, Yong-He;Zheng, Xue-Feng;Zhang, Jin-Cheng;Hao, Yue;
12:53:28 Room-temperature diffusive phenomena in semiconductors: The case of AlGaN
DOI:10.1103/PhysRevB.84.214109 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Warnick, Keith H.;Puzyrev, Yevgeniy;Roy, Tania;Fleetwood, Daniel M.;Schrimpf, Ronald D.;Pantelides, Sokrates T.;
12:53:29 Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
DOI:10.1063/1.3624702 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Kayis, C.;Ferreyra, R. A.;Wu, M.;Li, X.;Oezguer, Ue.;Matulionis, A.;Morkoc, H.;
12:53:30 Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4724207 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Xu, Weikai;Rao, Hemant;Bosman, Gijs;
12:53:31 Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface
DOI:10.1063/1.4802011 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Meneghini, Matteo;Bertin, Marco;Stocco, Antonio;dal Santo, Gabriele;Marcon, Denis;Malinowski, Pawel E.;Chini, Alessandro;Meneghesso, Gaudenzio;Zanoni, Enrico;
12:53:32 Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement
DOI:10.1063/1.4885838 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Katsuno, Takashi;Manaka, Takaaki;Ishikawa, Tsuyoshi;Ueda, Hiroyuki;Uesugi, Tsutomu;Iwamoto, Mitsumasa;
12:53:33 Investigation of leakage current paths in n-GaN by conductive atomic force microscopy
DOI:10.1063/1.4868127 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Kim, Bumho;Moon, Daeyoung;Joo, Kisu;Oh, Sewoung;Lee, Young Kuk;Park, Yongjo;Nanishi, Yasushi;Yoon, Euijoon;
12:53:34 Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
DOI:10.1063/1.3698492 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Ancona, M. G.;Binari, S. C.;Meyer, D. J.;
12:53:35 Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
DOI:10.1007/s11664-010-1120-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:12 AU: Baeumler, Martina;Guetle, Frank;Polyakov, Vladimir;Caesar, Markus;Dammann, Michael;Konstanzer, Helmer;Pletschen, Wilfried;Bronner, Wolfgang;Quay, Ruediger;Waltereit, Patrick;Mikulla, Michael;Ambacher, Oliver;Bourgeois, Franck;Behtash, Reza;Riepe, Klaus J.;van der Wel, Paul J.;Klappe, Jos;Rodle, Thomas;
12:53:36 Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location
DOI:10.1007/s11664-011-1787-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:2 AU: Fang, Z. -Q.;Claflin, B.;Look, D. C.;
12:53:37 Electrical properties of InAlN/GaN high electron mobility transistor with Al(2)O(3), ZrO(2), and GdScO(3) gate dielectrics
DOI:10.1116/1.3521506 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:9 AU: Cico, K.;Husekov, K.;Tapajna, M.;Gregusova, D.;Stoklas, R.;Kuzmik, J.;Carlin, J. -F.;Grandjean, N.;Pogany, D.;Froehlich, K.;
12:53:38 Temperature dependent dielectric function and the E-0 critical points of hexagonal GaN from 30 to 690 K
DOI:10.1063/1.4867094 JN:AIP ADVANCES PY:2014
TC:2 AU: Kim, Tae Jung;Hwang, Soon Yong;Byun, Jun Seok;Barange, Nilesh S.;Park, Han Gyeol;Kim, Young Dong;
12:53:39 Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
DOI:10.1063/1.4751037 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Zhu, C. Y.;Wu, M.;Kayis, C.;Zhang, F.;Li, X.;Ferreyra, R. A.;Matulionis, A.;Avrutin, V.;Oezguer, Ue.;Morkoc, H.;
12:53:40 Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
DOI:10.1063/1.4816424 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Silvestri, Marco;Uren, Michael J.;Killat, Nicole;Marcon, Denis;Kuball, Martin;
12:53:41 Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons
DOI:10.1063/1.4869680 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Meneghini, M.;Bisi, D.;Marcon, D.;Stoffels, S.;Van Hove, M.;Wu, T. -L.;Decoutere, S.;Meneghesso, G.;Zanoni, E.;
12:53:42 Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb
DOI:10.1063/1.3505795 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Shen, X.;DasGupta, S.;Reed, R. A.;Schrimpf, R. D.;Fleetwood, D. M.;Pantelides, S. T.;
12:53:43 Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes
DOI:10.1063/1.4891830 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Moseley, Michael;Allerman, Andrew;Crawford, Mary;Wierer, Jonathan J., Jr.;Smith, Michael;Biedermann, Laura;
12:53:44 Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
DOI:10.1063/1.4873301 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kuzmik, J.;Jurkovic, M.;Gregusova, D.;Tapajna, M.;Brunner, F.;Cho, M.;Meneghesso, G.;Wuerfl, J.;
12:53:45 Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
DOI:10.1063/1.3662041 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Roy, T.;Zhang, E. X.;Puzyrev, Y. S.;Shen, X.;Fleetwood, D. M.;Schrimpf, R. D.;Koblmueller, G.;Chu, R.;Poblenz, C.;Fichtenbaum, N.;Suh, C. S.;Mishra, U. K.;Speck, J. S.;Pantelides, S. T.;
12:53:46 Theoretical study of the stabilization mechanisms of the different stable oxygen incorporated (1010) surface of III-nitrides
DOI:10.1063/1.3311557 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Ye, Honggang;Chen, Guangde;Wu, Yelong;Zhu, Youzhang;
12:53:47 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters
DOI:10.1007/s11664-010-1434-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:0 AU: Di Lecce, Valerio;Esposto, Michele;Bonaiuti, Matteo;Fantini, Fausto;Meneghesso, Gaudenzio;Zanoni, Enrico;Chini, Alessandro;
12:54:1:1 Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures
DOI:10.1021/n15002247 JN:NANO LETTERS PY:2014
TC:1 AU: Beeler, M.;Hille, P.;Schoermann, J.;Teubert, J.;de la Mata, M.;Arbiol, J.;Eickhoff, M.;Monroy, E.;
12:54:1:2 Terahertz intersubband absorption in GaN/AlGaN step quantum wells
DOI:10.1063/1.3515423 JN:APPLIED PHYSICS LETTERS PY:2010
TC:36 AU: Machhadani, H.;Kotsar, Y.;Sakr, S.;Tchernycheva, M.;Colombelli, R.;Mangeney, J.;Bellet-Amalric, E.;Sarigiannidou, E.;Monroy, E.;Julien, F. H.;
12:54:1:3 Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
DOI:10.1063/1.4890611 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Edmunds, C.;Shao, J.;Shirazi-HD, M.;Manfra, M. J.;Malis, O.;
12:54:1:4 Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates
DOI:10.1063/1.3379300 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Kandaswamy, P. K.;Machhadani, H.;Kotsar, Y.;Sakr, S.;Das, A.;Tchernycheva, M.;Rapenne, L.;Sarigiannidou, E.;Julien, F. H.;Monroy, E.;
12:54:1:5 Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
DOI:10.1063/1.4819950 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Beeler, M.;Bougerol, C.;Bellet-Amalric, E.;Monroy, E.;
12:54:1:6 Pseudo-square AlGaN/GaN quantum wells for terahertz absorption
DOI:10.1063/1.4896768 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Beeler, M.;Bougerol, C.;Bellet-Amalric, E.;Monroy, E.;
12:54:1:7 Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
DOI:10.1063/1.4751040 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Edmunds, C.;Tang, L.;Shao, J.;Li, D.;Cervantes, M.;Gardner, G.;Zakharov, D. N.;Manfra, M. J.;Malis, O.;
12:54:1:8 Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
DOI:10.1063/1.4729470 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Sudradjat, Faisal F.;Zhang, Wei;Woodward, Jeffrey;Durmaz, Habibe;Moustakas, Theodore D.;Paiella, Roberto;
12:54:1:9 High-quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions
DOI:10.1063/1.3675468 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Bayram, C.;
12:54:1:10 Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy
DOI:10.1063/1.3618680 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Kotsar, Y.;Doisneau, B.;Bellet-Amalric, E.;Das, A.;Sarigiannidou, E.;Monroy, E.;
12:54:1:11 Terahertz intersubband transition in GaN/AlGaN step quantum well
DOI:10.1063/1.4802496 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Wu, F.;Tian, W.;Yan, W. Y.;Zhang, J.;Sun, S. C.;Dai, J. N.;Fang, Y. Y.;Wu, Z. H.;Chen, C. Q.;
12:54:1:12 Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates
DOI:10.1007/s11664-011-1881-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:7 AU: Edmunds, C.;Tang, L.;Li, D.;Cervantes, M.;Gardner, G.;Paskova, T.;Manfra, M. J.;Malis, O.;
12:54:1:13 Band engineering of GaN/AlN quantum wells by Si dopants
DOI:10.1063/1.4868580 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Zhuo, Xiaolong;Ni, Jianchao;Li, Jinchai;Lin, Wei;Cai, Duanjun;Li, Shuping;Kang, Junyong;
12:54:2:1 III-nitride quantum cascade detector grown by metal organic chemical vapor deposition
DOI:10.1063/1.4901220 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Song, Yu;Bhat, Rajaram;Huang, Tzu-Yung;Badami, Pranav;Zah, Chung-En;Gmachl, Claire;
12:54:2:2 Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 mu m
DOI:10.1063/1.4707904 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Sakr, S.;Giraud, E.;Dussaigne, A.;Tchernycheva, M.;Grandjean, N.;Julien, F. H.;
12:54:2:3 Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
DOI:10.1063/1.4813395 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Pesach, A.;Gross, E.;Huang, C-Y.;Lin, Y-D.;Vardi, A.;Schacham, S. E.;Nakamura, S.;Bahir, G.;
12:54:2:4 GaN/AlGaN waveguide quantum cascade photodetectors at lambda approximate to 1.55 mu m with enhanced responsivity and similar to 40 GHz frequency bandwidth
DOI:10.1063/1.4775374 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Sakr, S.;Crozat, P.;Gacemi, D.;Kotsar, Y.;Pesach, A.;Quach, P.;Isac, N.;Tchernycheva, M.;Vivien, L.;Bahir, G.;Monroy, E.;Julien, F. H.;
12:54:2:5 Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
DOI:10.1063/1.4905212 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kotani, Teruhisa;Arita, Munetaka;Arakawa, Yasuhiko;
12:54:2:6 Optical properties of nonpolar III-nitrides for intersubband photodetectors
DOI:10.1063/1.4798353 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Feezell, Daniel;Sharma, Yagya;Krishna, Sanjay;
12:54:2:7 Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron
DOI:10.1063/1.3660583 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Vardi, A.;Sakr, S.;Mangeney, J.;Kandaswamy, P. K.;Monroy, E.;Tchernycheva, M.;Schacham, S. E.;Julien, F. H.;Bahir, G.;
12:54:2:8 19 mu m quantum cascade infrared photodetectors
DOI:10.1063/1.4807030 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhai, Shen-Qiang;Liu, Jun-Qi;Wang, Xue-Jiao;Zhuo, Ning;Liu, Feng-Qi;Wang, Zhan-Guo;Liu, Xi-Hui;Li, Ning;Lu, Wei;
12:54:2:9 A simplified GaN/AlGaN quantum cascade detector with an alloy extractor
DOI:10.1063/1.4772501 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Sakr, S.;Giraud, E.;Tchernycheva, M.;Isac, N.;Quach, P.;Warde, E.;Grandjean, N.;Julien, F. H.;
12:54:2:10 Quantum dot quantum cascade infrared photodetector
DOI:10.1063/1.4874802 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Xue-Jiao;Zhai, Shen-Qiang;Zhuo, Ning;Liu, Jun-Qi;Liu, Feng-Qi;Liu, Shu-Man;Wang, Zhan-Guo;
12:54:2:11 Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities
DOI:10.1103/PhysRevB.88.235306 JN:Algarabel, Pedro/K-8583-2014; Ibarra, Manuel Ricardo/K-1150-2014; Rodriguez Fernandez, Jesus/L-7960-2014;Morellon, Luis/0000-0003-3724-508X; Marcano Aguado,;Noelia/0000-0002-5331-9758; PY:100 TC:arabel, Pedro/0000-0002-4698-3378;;Ibarra, Manuel Ricardo/0000-0003-0681-8260;;0;0;0;0;0;1098-0121;WOS:000332161300004;;;J;Minar, Jiri;Gremaud, Benoit;From antiferromagnetic ordering to magnetic textures in the;two-dimensional Fermi-Hubbard model with synthetic spin-orbit;interactions;PHYSICAL REVIEW B;88;23;235130;10.1103/PhysRevB.88.235130;DEC 30 2013;2013;We study the interacting Fermi-Hubbard model in two spatial dimensions;with synthetic gauge coupling of the spin-orbit Rashba type, at;half-filling. Using real-space mean-field theory, we numerically;determine the phase as a function of the interaction strength for;different values of the gauge-field parameter. For a fixed value of the;gauge field, we observe that when the strength of the repulsive;interaction is increased, the system enters into an antiferromagnetic;phase, then undergoes a first-order phase transition to a noncollinear;magnetic phase. Depending on the gauge-field parameter, this phase;further evolves to the one predicted from the effective Heisenberg model;obtained in the limit of large interaction strength. We explain the;presence of the antiferromagnetic phase at small interaction from the;computation of the spin-spin susceptibility, which displays a divergence;at low temperatures for the antiferromagnetic ordering. We discuss, how;the divergence is related to the nature of the underlying Fermi;surfaces. Finally, the fact that the first-order phase transitions for;different gauge-field parameters occur at unrelated critical interaction;strengths arises from a Hofstadter-like situation, i.e., for different;magnetic phases, the mean-field Hamiltonians have different;translational symmetries.;1;0;0;0;1;1098-0121;WOS:000332163500001;;;J;Rochal, S. B.;Lorman, V. L.;Yuzyuk, Yu. I.;Two-dimensional elasticity determines the low-frequency dynamics of;single-and double-walled carbon nanotubes;PHYSICAL REVIEW B;88;23;235435;10.1103/PhysRevB.88.235435;DEC 30 2013;2013;We develop a continuous theory of low-frequency dynamics for nanotubes;with walls constituted by singleatom monolayer, the topological;elasticity of which is not related to its vanishing macroscopic;thickness. The applicability region of the theory proposed includes all;truly two-dimensional materials such as graphene and MoS2. New;comprehensive interpretation and analytical expressions for;low-frequency modes in single-walled carbon nanotube (SWCNT) are given.;The theory unambiguously relates the radial breathing modes of SWCNT and;breathinglike modes of the double-walled carbon nanotube (DWCNT). The;existing Raman data on DWCNTs are fitted better than in the frame of;previous models.;Yuzyuk, Yuri/A-1285-2009;0;0;0;0;0;1098-0121;WOS:000332163500006;;;J;Wagner, Markus R.;Callsen, Gordon;Reparaz, Juan S.;Kirste, Ronny;Hoffmann, Axel;Rodina, Anna V.;Schleife, Andre;Bechstedt, Friedhelm;Phillips, Matthew R.;Effects of strain on the valence band structure and exciton-polariton;energies in ZnO;PHYSICAL REVIEW B;88;23;235210;10.1103/PhysRevB.88.235210;DEC 30 2013;2013;The uniaxial stress dependence of the band structure and the;exciton-polariton transitions in wurtzite ZnO is thoroughly studied;using modern first-principles calculations based on the HSE+ G(0)W(0);approach, k center dot p modeling using the deformation potential;framework, and polarized photoluminescence measurements. The ordering of;the valence bands [A(Gamma(7)), B(Gamma(9)), C(Gamma(7))] is found to be;robust even for high uniaxial and biaxial strains. Theoretical results;for the uniaxial pressure coefficients and splitting rates of the A, B,;and C valence bands and their optical transitions are obtained including;the effects of the spin-orbit interaction. The excitonic deformation;potentials are derived and the stress rates for hydrostatic pressure are;determined based on the results for uniaxial and biaxial stress. In;addition, the theory for the stress dependence of the exchange;interaction and longitudinal-transversal splitting of the exciton;polaritons is developed using the basic exciton functions of the;quasicubic approximation and taking the interaction between all exciton;states into account. It is shown that the consideration of these effects;is crucial for an accurate description of the stress dependence of the;optical spectra in ZnO. The theoretical results are compared to;polarized photoluminescence measurements of different ZnO substrates as;function of uniaxial pressure and experimental values reported in the;literature demonstrating an excellent agreement with the computed;pressure coefficients.;Wagner, Markus/A-3582-2009;Wagner, Markus/0000-0002-7367-5629;3;0;1;0;3;1098-0121;WOS:000332163500004;;;J;Zhang, Jian-Min;Ming, Wenmei;Huang, Zhigao;Liu, Gui-Bin;Kou, Xufeng;Fan, Yabin;Wang, Kang L.;Yao, Yugui;Stability, electronic, and magnetic properties of the magnetically doped;topological insulators Bi2Se3, Bi2Te3, and Sb2Te3;PHYSICAL REVIEW B;88;23;235131;10.1103/PhysRevB.88.235131;DEC 30 2013;2013;Magnetic interaction with the gapless surface states in a topological;insulator (TI) has been predicted to give rise to a few exotic quantum;phenomena. However, the effective magnetic doping of TI is still;challenging in the experiment. Using first-principles calculations, the;magnetic doping properties (V, Cr, Mn, and Fe) in three strong TIs;(Bi2Se3, Bi2Te3, and Sb2Te3) are investigated. We find that for all;three TIs the cation-site substitutional doping is most energetically;favorable with the anion-rich environment as the optimal growth;condition. Further, our results show that under the nominal doping;concentration of 4%, Cr- and Fe-doped Bi2Se3, Bi2Te3, and Cr-doped;Sb2Te3 remain as insulators, while all the V-and Mn-doped TIs, and;Fe-doped Sb2Te3 become metal. We also show that the magnetic interaction;of Cr-doped Bi2Se3 tends to be ferromagnetic, while Fe-doped Bi2Se3 is;likely to be antiferromagnetic. Finally, we estimate the magnetic;coupling and the Curie temperature for the promising ferromagnetic;insulator (Cr-doped Bi2Se3) by Monte Carlo simulation. These findings;may provide important guidance for the magnetism incorporation in TIs;experimentally.;Yao, Yugui/A-8411-2012; Liu, Gui-Bin/A-2724-2009; Zhang, Jian-Min/A-7757-2012;Liu, Gui-Bin/0000-0001-5935-7555;;4;0;0;0;4;1098-0121;WOS:000332163500002;;;J;Zitko, R.;Hansen, D.;Perepelitsky, E.;Mravlje, J.;Georges, A.;Shastry, B. S.;Extremely correlated Fermi liquid theory meets dynamical mean-field;theory: Analytical insights into the doping-driven Mott transition;PHYSICAL REVIEW B;88;23;235132;10.1103/PhysRevB.88.235132;DEC 30 2013;2013;We consider a doped Mott insulator in the large dimensionality limit;within both the recently developed extremely correlated Fermi liquid;(ECFL) theory and the dynamical mean-field theory (DMFT). We show that;the general structure of the ECFL sheds light on the rich frequency;dependence of the DMFT self-energy. Using the leading Fermi liquid form;of the two key auxiliary functions introduced in the ECFL theory, we;obtain an analytical ansatz, which provides a good quantitative;description of the DMFT self-energy down to hole doping level delta;similar or equal to 0.2. In particular, the deviation from Fermi liquid;behavior and the corresponding particle-hole asymmetry developing at a;low-energy scale are well reproduced by this ansatz. The DMFT being;exact at large dimensionality, our study also provides a benchmark of;the ECFL in this limit. We find that the main features of the;self-energy and spectral line shape are well reproduced by the ECFL;calculations in the O(lambda(2)) minimal scheme, for not too low doping;level delta greater than or similar to 0.3. The DMFT calculations;reported here are performed using a state-of-the-art numerical;renormalization-group impurity solver, which yields accurate results;down to an unprecedentedly small doping level delta less than or similar;to 0.001.;1;0;0;0;1;1098-0121;WOS:000332163500003;;;J;Barros, M. S. M.;Nascimento Junior, A. J.;Macedo-Junior, A. F.;Ramos, J. G. G. S.;Barbosa, A. L. R.;Open chaotic Dirac billiards: Weak (anti)localization, conductance;fluctuations, and decoherence;PHYSICAL REVIEW B;88;24;245133;10.1103/PhysRevB.88.245133;DEC 30 2013;2013;In this paper, we investigate the transport properties of open chaotic;Dirac billiards and their intrinsic (chiral universal) symmetry classes.;The prominent examples of these systems are some categories of;topological insulators and graphene structures. We extend the;diagrammatic method of integration over the unitary group and obtain;analytical results for the semiclassical limit and for the high quantum;limit in the universal regime. We show the emergence of quantum;fingerprints characteristic of the chiral symmetries, which are;amplified in the presence of a single open channel in each electronic;terminals. We compare the chaotic Dirac billiards with the "Schrodinger;billiards" in a myriad of regimes, exhibiting the differences between;the chiral universal classes and the Wigner-Dyson classes. Two numerical;methods were used to confirm our analytical findings, yielding also the;distribution of conductances. We also investigate analytically the;effect of dephasing using the characteristic time scales of the chaotic;billiards and we show the appearance of peculiar numbers of chaos.;0;0;0;0;0;1098-0121;WOS:000332164700008;;;J;Cooke, D. G.;Jepsen, P. Uhd;Lek, Jun Yan;Lam, Yeng Ming;Sy, F.;Dignam, M. M.;Picosecond dynamics of internal exciton transitions in CdSe nanorods;PHYSICAL REVIEW B;88;24;241307;10.1103/PhysRevB.88.241307;DEC 30 2013;2013;The picosecond dynamics of excitons in colloidal CdSe nanorods are;directly measured via their 1s to 2p-like internal transitions by;ultrabroadband terahertz spectroscopy. Broadened absorption peaks from;both the longitudinal and transverse states are observed at 8.5 and 11;THz, respectively. The onset of exciton-LO phonon coupling appears as a;bleach in the optical conductivity spectra at the LO phonon energy for;times > 1 ps after excitation. Simulations show a suppressed exciton;temperature due to thermally excited hole states being rapidly captured;onto ligands or unpassivated surface states. The relaxation kinetics are;manipulated and the longitudinal transition is quenched by surface;ligand exchange with hole capturing pyridine.;Lam, Yeng Ming/A-2230-2011;Lam, Yeng Ming/0000-0001-9390-8074;1;0;0;0;1;1098-0121;WOS:000332164700002;;;J;Cote, R.;Barrette, Manuel;Validity of the two-component model of bilayer and trilayer graphene in;a magnetic field;PHYSICAL REVIEW B;88;24;245445;10.1103/PhysRevB.88.245445;DEC 30 2013;2013;The eigenstates of an electron in the chiral two-dimensional electron;gas (C2DEG) formed in an AB-stacked bilayer or an ABC-stacked trilayer;graphene is a spinor with four or six components, respectively. These;components give the amplitude of the wave function on the four or six;carbon sites in the unit cell of the lattice. In the tight-binding;approximation, the eigenenergies are thus found by diagonalizing a 4 x 4;or a 6 x 6 matrix. In the continuum approximation where the electron;wave vector k << 1/a(0), with a(0) the lattice constant of the graphene;sheets, a common approximation is the two-component (or "two-band");model(1) where the eigenstates for the bilayer and trilayer systems are;described by a two-component spinor that gives the amplitude of the wave;function on the two sites with low energy vertical bar E vertical bar <<;gamma(1) where gamma(1) is the hopping energy between sites that are;directly above one another in adjacent layers. The two-component model;has been used extensively to study the phase diagram of the C2DEG in a;magnetic field as well as its transport and optical properties. In this;paper, we use a numerical approach to compute the eigenstates and Landau;level energies of the full tight-binding model in the continuum;approximation and compare them with the prediction of the two-component;model when the magnetic field or an electrical bias between the;outermost layers is varied. Our numerical analysis shows that the;two-component model is a good approximation for bilayer graphene in a;wide range of magnetic field and bias but mostly for Landau level M = 0.;The applicability of the two-component model in trilayer graphene, even;for level M = 0, is much more restricted. In this case, the;two-component model fails to reproduce some of the level crossings that;occur between the sublevels of M = 0.;3;0;0;0;3;1098-0121;WOS:000332164700013;;;J;Gammelmark, Soren;Zinner, Nikolaj Thomas;Dipoles on a two-leg ladder;PHYSICAL REVIEW B;88;24;245135;10.1103/PhysRevB.88.245135;DEC 30 2013;2013;We study polar molecules with long-range dipole-dipole interactions;confined to move on a two-leg ladder for different orientations of the;molecular dipole moments with respect to the ladder. Matrix product;states are employed to calculate the many-body ground state of the;system as a function of lattice filling fractions, perpendicular hopping;between the legs, and dipole interaction strength. We show that the;system exhibits zigzag ordering when the dipolar interactions are;predominantly repulsive. As a function of dipole moment orientation with;respect to the ladder, we find that there is a critical angle at which;ordering disappears. This angle is slightly larger than the angle at;which the dipoles are noninteracting along a single leg. This behavior;should be observable using current experimental techniques.;2;0;0;0;2;1098-0121;WOS:000332164700010;;;J;Hofer, Patrick P.;Buettiker, Markus;Emission of time-bin entangled particles into helical edge states;PHYSICAL REVIEW B;88;24;241308;10.1103/PhysRevB.88.241308;DEC 30 2013;2013;We propose a single-particle source which emits into the helical edge;states of a two-dimensional quantum spin Hall insulator. Without;breaking time-reversal symmetry, this source acts like a pair of;noiseless single-electron emitters which each inject separately into a;chiral edge state. By locally breaking time-reversal symmetry, the;source becomes a proper single-particle emitter which exhibits shot;noise. Due to its intrinsic helicity, this system can be used to produce;time-bin entangled pairs of electrons in a controlled manner. The noise;created by the source contains information on the emitted wave packets;and is proportional to the concurrence of the emitted state.;Hofer, Patrick/O-1062-2013;Hofer, Patrick/0000-0001-6036-7291;7;0;0;0;7;1098-0121;WOS:000332164700003;;;J;Leon, C.;Latge, A.;Half-metallicity study of graphene nanoribbon bilayers under external;fields;PHYSICAL REVIEW B;88;24;245446;10.1103/PhysRevB.88.245446;DEC 30 2013;2013;Here we discuss the possibility of modulating energy gaps of graphene;nanoribbon bilayers, with zigzag edges, by applying electric fields. The;system is disposed in the Bernal configuration and is described by a;Hubbard Hamiltonian. We follow a Hartree-Fock mean-field theory to;calculate the electronic properties of the system. Under the action of a;transversal electric field, half-metallicity is found: One of the spin;bands increases the gap energy as the intensity of the field is;increased whereas the other decreases until achieving a null gap. For a;particular electric field range, the system exhibits metallic and;semiconducting features depending on the spin band. Half-metallicity is;enhanced due to an extra effect for the bilayer system: The presence of;a robust plateau-like in the gap versus field intensity diagram, for an;intermediate energy gap value of the semiconducting band. The;correlation of the gap plateau with local magnetizations and charge;numbers in the two layers is investigated. Further applied gate voltages;on the ribbons are considered to investigate the possibilities of;getting new physical responses for tilted electric field configurations.;Possible spintronic applications can be driven based on the differential;spin-band features achieved.;1;0;0;0;1;1098-0121;WOS:000332164700014;;;J;Lundgren, Rex;Fuji, Yohei;Furukawa, Shunsuke;Oshikawa, Masaki;Entanglement spectra between coupled Tomonaga-Luttinger liquids:;Applications to ladder systems and topological phases;PHYSICAL REVIEW B;88;24;245137;10.1103/PhysRevB.88.245137;DEC 30 2013;2013;We study the entanglement spectrum (ES) and entropy between two coupled;Tomonaga-Luttinger liquids (TLLs) on parallel periodic chains. This;problem gives access to the entanglement properties of various;interesting systems, such as spin ladders as well as two-dimensional;topological phases. By expanding interchain interactions to quadratic;order in bosonic fields, we are able to calculate the ES for both gapped;and gapless systems using only methods for free theories. In certain;gapless phases of coupled nonchiral TLLs, we interestingly find an ES;with a dispersion relation proportional to the square root of the;subsystem momentum, which we relate to a long-range interaction in the;entanglement Hamiltonian. We numerically demonstrate the emergence of;this unusual dispersion in a model of hard-core bosons on a ladder. In;gapped phases of coupled nonchiral TLLs, which are relevant to spin;ladders and topological insulators, we show that the ES consists of;linearly dispersing modes, which resembles the spectrum of a;single-chain TLL but is characterized by a modified TLL parameter. Based;on a calculation for coupled chiral TLLs, we are also able to provide a;very simple proof for the correspondence between the ES and the;edge-state spectrum in quantum Hall systems consistent with previous;numerical and analytical studies.;Oshikawa, Masaki/F-4992-2011; Furukawa, Shunsuke/E-4416-2013;Oshikawa, Masaki/0000-0002-7637-7432;;6;0;0;0;6;1098-0121;WOS:000332164700012;;;J;Moon, Pilkyung;Koshino, Mikito;Optical properties of the Hofstadter butterfly in the moire superlattice;PHYSICAL REVIEW B;88;24;241412;10.1103/PhysRevB.88.241412;DEC 30 2013;2013;We investigate the optical absorption spectrum and the selection rule;for the Hofstadter butterfly in twisted bilayer graphene under magnetic;fields. We demonstrate that the absorption spectrum exhibits a;self-similar recursive pattern reflecting the fractal nature of the;energy spectrum. We find that the optical selection rule has a nested;self-similar structure as well, and it is governed by the conservation;of the total angular momentum summed over different hierarchies.;Moon, Pilkyung/A-2930-2010;Moon, Pilkyung/0000-0003-3994-4255;2;0;0;0;2;1098-0121;WOS:000332164700005;;;J;Poirier, Mario;de Lafontaine, Mathieu;Bourbonnais, Claude;Pouget, Jean-Paul;Charge, spin, and lattice effects in the spin-Peierls ground state of;MEM(TCNQ)(2);PHYSICAL REVIEW B;88;24;UNSP 245134;10.1103/PhysRevB.88.245134;DEC 30 2013;2013;We report an investigation of charge, spin, and lattice effects in the;spin-Peierls state of the organic compound MEM(TCNQ)(2). The 16.5-GHz;dielectric function along the chain axis shows an enhancement below the;spin-Peierls transition temperature near 18 K consistent with the charge;coupling to the elastic strain involved in the transition. The velocity;of two elastic modes perpendicular to the chain axis presents anomalies;at the transition, which can be explained with a Landau free-energy;model including a linear-quadratic coupling energy term between the;appropriate elastic strain e and the spin-Peierls magnetic gap Delta(q).;The analysis of the dielectric and elastic features aims toward an order;parameter with an associated critical exponent beta similar to 0.36,;which is similar to the three-dimensional behavior seen in other;spin-Peierls materials. All these effects studied in a magnetic field up;to 18 Teslas appear also compatible with a mean-field model of a;quasi-one-dimensional spin-Peierls system.;0;0;0;0;0;1098-0121;WOS:000332164700009;;;J;Syzranov, S. V.;Rodionov, Ya. I.;Kugel, K. I.;Nori, F.;Strongly anisotropic Dirac quasiparticles in irradiated graphene;PHYSICAL REVIEW B;88;24;241112;10.1103/PhysRevB.88.241112;DEC 30 2013;2013;We study quasiparticle dynamics in graphene exposed to a linearly;polarized electromagnetic wave of very large intensity. We demonstrate;that low-energy transport in such system can be described by an;effective time-independent Hamiltonian, characterized by multiple Dirac;points in the first Brillouin zone. Around each Dirac point the spectrum;is anisotropic: the velocity along the polarization of the radiation;significantly exceeds the velocity in the perpendicular direction.;Moreover, in some of the points the transverse velocity oscillates as a;function of the radiation intensity. We find that the conductance of a;graphene p-n junction in the regime of strong irradiation depends on the;polarization as G(theta) proportional to vertical bar sin theta vertical;bar(3/2), where theta is the angle between the polarization and the p-n;interface, and oscillates as a function of the radiation intensity.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332164700001;;;J;Toke, Csaba;Particle-hole symmetry and bifurcating ground-state manifold in the;quantum Hall ferromagnetic states of multilayer graphene;PHYSICAL REVIEW B;88;24;241411;10.1103/PhysRevB.88.241411;DEC 30 2013;2013;The orbital structure of the quantum Hall ferromagnetic states in the;zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA,;etc. stackings) is determined by the exchange interaction with all;levels, including deep-lying states in the Dirac sea. This exchange;field favors orbitally coherent states with a U(1) orbital symmetry if;the filling factor nu is not a multiple of the number of layers. If;electrons fill the orbital sector of a fixed spin/valley component to;one-half, e.g., at nu = +/- 3, +/- 1 in the bilayer and at nu = +/- 2,;+/- 6 in the ABCA four-layer, there is a transition to a Z(2) x U(1);manifold. For weak interaction, the structure in the zero-energy Landau;band compensates for the different exchange interaction on the;sublattices in the Landau orbitals; on the other side, the ground state;comes in two copies that distribute charge on the sublattices;differently. We expect a sequence of similar bifurcations in multilayers;of Bernal stacking.;1;1;0;0;1;1098-0121;WOS:000332164700004;;;J;Tonegawa, S.;Hashimoto, K.;Ikada, K.;Tsuruhara, Y.;Lin, Y. -H.;Shishido, H.;Haga, Y.;Matsuda, T. D.;Yamamoto, E.;Onuki, Y.;Ikeda, H.;Matsuda, Y.;Shibauchi, T.;Cyclotron resonance study of quasiparticle mass and scattering rate in;the hidden-order and superconducting phases of URu2Si2;PHYSICAL REVIEW B;88;24;245131;10.1103/PhysRevB.88.245131;DEC 30 2013;2013;The observation of cyclotron resonance in ultraclean crystals of URu2Si2;[S. Tonegawa et al., Phys. Rev. Lett. 109, 036401 (2012)] provides;another route besides quantum oscillations to the determination of the;bulk electronic structure in the hidden-order phase. We report detailed;analyses of the resonance lines, which fully resolve the cyclotron mass;structure of the main Fermi surface sheets. A particular focus is given;to the anomalous splitting of the sharpest resonance line near the [110];direction under in-plane magnetic-field rotation, which implies peculiar;electronic structure in the hidden-order phase. The results under the;field rotation from [110] toward [001] direction reveal that the;splitting is a robust feature against field tilting from the basal;plane. This is in sharp contrast to the reported frequency branch alpha;in the quantum oscillation experiments showing a three-fold splitting;that disappears by a small field tilt, which can be explained by the;magnetic breakdown between the large hole sphere and small electron;pockets. Our analysis of the cyclotron resonance profiles reveals that;the heavier branch of the split line has a larger scattering rate,;providing evidence for the existence of hot-spot regions along the [110];direction. These results are consistent with the broken fourfold;rotational symmetry in the hidden-order phase, which can modify the;interband scattering in an asymmetric manner. We also extend our;measurements down to 0.7 K, which results in the observation of;cyclotron resonance in the superconducting state, where novel effects of;vortex dynamics may enter. We find that the cyclotron mass undergoes no;change in the superconducting state. In contrast, the quasiparticle;scattering rate shows a rapid decrease below the vortex-lattice melting;transition temperature, which supports the formation of quasiparticle;Bloch state in the vortex lattice phase.;Hashimoto, Kenichiro/C-4925-2012; Shibauchi, Takasada/B-9349-2008;Shibauchi, Takasada/0000-0001-5831-4924;2;1;0;0;2;1098-0121;WOS:000332164700006;;;J;Wang, Chenjie;Levin, Michael;Weak symmetry breaking in two-dimensional topological insulators;PHYSICAL REVIEW B;88;24;245136;10.1103/PhysRevB.88.245136;DEC 30 2013;2013;We show that there exist two-dimensional (2D) time-reversal invariant;fractionalized insulators with the property that both their boundary;with the vacuum and their boundary with a topological insulator can be;fully gapped without breaking time-reversal or charge conservation;symmetry. This result leads us to an apparent paradox: we consider a;geometry in which a disklike region made up of a topological insulator;is surrounded by an annular strip of a fractionalized insulator, which;is, in turn, surrounded by the vacuum. If we gap both boundaries of the;strip, we naively obtain an example of a gapped interface between a;topological insulator and the vacuum that does not break any;symmetries-an impossibility. The resolution of this paradox is that this;system spontaneously breaks time-reversal symmetry in an unusual way,;which we call weak symmetry breaking. In particular, we find that the;only order parameters that are sensitive to the symmetry breaking are;nonlocal operators that describe quasiparticle tunneling processes;between the two edges of the strip; expectation values of local order;parameters vanish exponentially in the limit of a wide strip. Also, we;find that the symmetry breaking in our system comes with a ground-state;degeneracy, but this ground-state degeneracy is topologically protected,;rather than symmetry protected. We show that this kind of symmetry;breaking can also occur at the edge of 2D fractional topological;insulators.;Wang, Chenjie/G-8652-2013;2;0;0;0;2;1098-0121;WOS:000332164700011;;;J;Zhang, Qingyun;Cheng, Yingchun;Gan, Li-Yong;Schwingenschloegl, Udo;Giant valley drifts in uniaxially strained monolayer MoS2;PHYSICAL REVIEW B;88;24;245447;10.1103/PhysRevB.88.245447;DEC 30 2013;2013;Using first-principles calculations, we study the electronic structure;of monolayer MoS2 under uniaxial strain. We show that the energy valleys;drift far off the corners of the Brillouin zone (K points), about 12;times the amount observed in graphene. Therefore, it is essential to;take this effect into consideration for a correct identification of the;band gap. The system remains a direct band gap semiconductor up to 4%;uniaxial strain, while the size of the band gap decreases from 1.73 to;1.54 eV. We also demonstrate that the splitting of the valence bands due;to inversion symmetry breaking and spin-orbit coupling is not sensitive;to strain.;Cheng, Yingchun/C-8895-2011; Gan, Liyong/D-8113-2013;3;0;0;0;3;1098-0121;WOS:000332164700015;;;J;Zhang, Wentao;Smallwood, Christopher L.;Jozwiak, Chris;Miller, Tristan L.;Yoshida, Yoshiyuki;Eisaki, Hiroshi;Lee, Dung-Hai;Lanzara, Alessandra;Signatures of superconductivity and pseudogap formation in;nonequilibrium nodal quasiparticles revealed by ultrafast angle-resolved;photoemission;PHYSICAL REVIEW B;88;24;245132;10.1103/PhysRevB.88.245132;DEC 30 2013;2013;We use time- and angle-resolved photoemission to measure the nodal;nonequilibrium electronic states in various dopings of;Bi2Sr2CaCu2O8+delta. We find that the initial pump-induced transient;signal of these ungapped states is strongly affected by the onset of the;superconducting gap at T-c, superconducting pairing fluctuations at T-p,;and the pseudogap at T*. Moreover, T-p marks a suggestive threshold in;the fluence-dependent transient signal, with the appearance of a;critical fluence below T-p that corresponds to the energy required to;break apart all Cooper pairs. These results challenge the notion of a;nodal-antinodal dichotomy in cuprate superconductors by establishing a;link between nodal quasiparticles and the cuprate phase diagram.;ZHANG, Wentao/B-3626-2011;4;1;0;0;4;1098-0121;WOS:000332164700007;;;J;Svintsov, D.;Vyurkov, V.;Ryzhii, V.;Otsuji, T.;Hydrodynamic electron transport and nonlinear waves in graphene;PHYSICAL REVIEW B;88;24;245444;10.1103/PhysRevB.88.245444;DEC 27 2013;2013;We derive the system of hydrodynamic equations governing the collective;motion of massless fermions in graphene. The obtained equations;demonstrate the lack of Galilean and Lorentz invariance and contain a;variety of nonlinear terms due to the quasirelativistic nature of;carriers. Using these equations, we show the possibility of soliton;formation in an electron plasma of gated graphene. The quasirelativistic;effects set an upper limit for soliton amplitude, which marks graphene;out of conventional semiconductors. The mentioned noninvariance of the;equations is revealed in spectra of plasma waves in the presence of;steady flow, which no longer obey the Doppler shift. The feasibility of;plasma-wave excitation by direct current in graphene channels is also;discussed.;Svintsov, Dmitry/I-1755-2014;0;0;0;0;0;1098-0121;WOS:000332160400002;;;J;Yan, Jun;Norskov, Jens K.;Calculated formation and reaction energies of 3d transition metal oxides;using a hierachy of exchange-correlation functionals;PHYSICAL REVIEW B;88;24;245204;10.1103/PhysRevB.88.245204;DEC 27 2013;2013;The formation and oxidation reaction energies of 16 transition metal;oxides (TMOs) are benchmarked against experiments with an increasing;complexity of the exchange-correlation (xc) functionals: PBE, PBE + U;with a single U for each transition metal element, PBE0 (25% exact;exchange included), EXX (100% exact exchange), and EXX + RPA (random;phase approximation for the correlation energy). Although rather;challenging on standard CPU computing facilities, the RPA calculations;were performed efficiently on graphic processing units (GPUs). For the;formation energies, the PBE + U, PBE0, EXX + RPA improves significantly;over PBE with mean absolute errors (MAE) of 0.83 (PBE), 0.39 (PBE + U),;0.34 (PBE0), and 0.39 (EXX + RPA) eV per oxygen. In addition, EXX+ RPA;improves over the other xc functionals on the oxidation reaction;energies, with MAE of 0.27 (PBE), 0.28 (PBE + U), 0.30 (PBE0), to 0.13;(EXX + RPA) eV per oxygen. The distinct trend observed for the;calculated oxidation reaction energies compared to the formation;energies is due to that the errors in formation energies for PBE and;EXX+ RPA are systematic; while for PBE + U and PBE0 the deviations have;both signs, so that the error cancellations between different valence;states work better for PBE and EXX + RPA. Finally, we compared the;performance of the EXX + RPA for total energies and G(0)W(0), which uses;the random phase approximation in constructing the W kernel, for band;gaps, and discuss a few challenges for the EXX + RPA method on TMOs.;0;0;0;0;0;1098-0121;WOS:000332160400001;;;J;Bahamon, D. A.;Neto, A. H. Castro;Pereira, Vitor M.;Effective contact model for geometry-independent conductance;calculations in graphene;PHYSICAL REVIEW B;88;23;235433;10.1103/PhysRevB.88.235433;DEC 27 2013;2013;A geometry-independent effective model for the contact self-energies is;proposed to calculate the quantum conductance of patterned graphene;devices using Green's functions. A Corbino disk, being the simplest;device where the contacts cannot be modeled as semi-infinite ribbons, is;chosen to illustrate this approach. This system's symmetry allows an;analytical solution against which numerical calculations on the lattice;can be benchmarked. The effective model perfectly describes the;conductance of Corbino disks at low-to-moderate energies, and is robust;against the size of the annular device region, the number of atoms on;the edge, external magnetic fields, or electronic disorder. The contact;model considered here affords an expedient, flexible, and;geometry-agnostic approach that easily allows the consideration of;device dimensions encompassing several million atoms, and realistic;radial dimensions of a few hundreds of nanometers.;Bahamon, Dario/G-1369-2012; Pereira, Vitor/D-4088-2009; Castro Neto, Antonio/C-8363-2014;Bahamon, Dario/0000-0003-3852-2085; Castro Neto,;Antonio/0000-0003-0613-4010;0;0;0;0;0;1098-0121;WOS:000332159200003;;;J;Hermann, Andreas;Ashcroft, N. W.;Hoffmann, Roald;Isotopic differentiation and sublattice melting in dense dynamic ice;PHYSICAL REVIEW B;88;21;214113;10.1103/PhysRevB.88.214113;DEC 27 2013;2013;The isotopes of hydrogen provide a unique exploratory laboratory for;examining the role of zero point energy (ZPE) in determining the;structural and dynamic features of the crystalline ices of water. There;are two critical regions of high pressure: (i) near 1 TPa and (ii) near;the predicted onset of metallization at around 5 TPa. At the lower;pressure of the two, we see the expected small isotopic effects on phase;transitions. Near metallization, however, the effects are much greater,;leading to a situation where tritiated ice could skip almost entirely a;phase available to the other isotopomers. For the higher pressure ices,;we investigate in some detail the enthalpics of a dynamic proton;sublattice, with the corresponding structures being quite ionic. The;resistance toward diffusion of single protons in the ground state;structures of high-pressure H2O is found to be large, in fact to the;point that the ZPE reservoir cannot overcome these. However, the;barriers toward a three-dimensional coherent or concerted motion of;protons can be much lower, and the ensuing consequences are explored.;Hermann, Andreas/E-8687-2010;Hermann, Andreas/0000-0002-8971-3933;1;0;0;0;1;1098-0121;WOS:000332157500001;;;J;Higashi, Yoichi;Nagai, Yuki;Machida, Masahiko;Hayashi, Nobuhiko;Field-angle resolved flux-flow resistivity as a phase-sensitive probe of;unconventional Cooper pairing;PHYSICAL REVIEW B;88;22;224511;10.1103/PhysRevB.88.224511;DEC 27 2013;2013;We theoretically investigate the applied magnetic field-angle dependence;of the flux-flow resistivity rho(f)(alpha(M)) for a uniaxially;anisotropic Fermi surface. rho(f) is related to the quasiparticle;scattering rate inside a vortex core, which reflects the sign change in;the superconducting pair potential. We find that rho(f)(alpha(M)) is;sensitive to the sign change in the pair potential and has its maximum;when the magnetic field is parallel to the gap-node direction. We;propose the measurement of the field-angle dependent oscillation of;rho(f)(alpha(M)) as a phase-sensitive field-angle resolved experiment.;Nagai, Yuki/B-6698-2011;Nagai, Yuki/0000-0001-5098-5440;0;0;0;0;0;1098-0121;WOS:000332158300001;;;J;Karakonstantakis, G.;Liu, L.;Thomale, R.;Kivelson, S. A.;Correlations and renormalization of the electron-phonon coupling in the;honeycomb Hubbard ladder and superconductivity in polyacene;PHYSICAL REVIEW B;88;22;224512;10.1103/PhysRevB.88.224512;DEC 27 2013;2013;We have performed extensive density matrix renormalization group (DMRG);studies of the Hubbard model on a honeycomb ladder. The band structure;(with Hubbard U = 0) exhibits an unusual quadratic band touching at;half-filling, which is associated with a quantum Lifshitz transition;from a band insulator to a metal. For one electron per site, nonzero U;drives the system into an insulating state in which there is no;pair-binding between added electrons; this implies that;superconductivity driven directly by the repulsive electron-electron;interactions is unlikely in the regime of small doping, x << 1. However,;the divergent density of states as x -> 0, the large values of the;phonon frequencies, and an unusual correlation induced enhancement of;the electron-phonon coupling imply that lightly doped polyacenes, which;approximately realize this structure, are good candidates for;high-temperature electron-phonon driven superconductivity.;1;1;0;0;1;1098-0121;WOS:000332158300002;;;J;Koerbel, Sabine;Elsaesser, Christian;Alignment of ferroelectric polarization and defect complexes in;copper-doped potassium niobate;PHYSICAL REVIEW B;88;21;214114;10.1103/PhysRevB.88.214114;DEC 27 2013;2013;Defect complexes consisting of Cu substitutionals on Nb sites and oxygen;vacancies in potassium niobate, KNbO3, are investigated with respect to;their contribution to ferroelectric hardening by means of;density-functional theory and classical atomistic simulations. We;determine the easy and hard directions for the ferroelectric;polarization created by these defect complexes, the energy differences;between easy and hard directions, and upper limits for the energy;barriers for switching the ferroelectric polarization between these;directions. The ferroelectric polarization preferentially aligns with;the defect complexes, which is expected to impede polarization switching;and hence to contribute to ferroelectric hardening.;1;0;0;0;1;1098-0121;WOS:000332157500002;;;J;Steger, Mark;Liu, Gangqiang;Nelsen, Bryan;Gautham, Chitra;Snoke, David W.;Balili, Ryan;Pfeiffer, Loren;West, Ken;Long-range ballistic motion and coherent flow of long-lifetime;polaritons;PHYSICAL REVIEW B;88;23;235314;10.1103/PhysRevB.88.235314;DEC 27 2013;2013;Exciton polaritons can be created in semiconductor microcavities. These;quasiparticles act as weakly interacting bosons with very light mass, of;the order of 10(-4) times the vacuum electron mass. Many experiments;have shown effects which can be viewed as due to a Bose-Einstein;condensate, or quasicondensate, of these particles. The lifetime of the;particles in most of those experiments has been of the order of a few;picoseconds, leading to significant nonequilibrium effects. By;increasing the cavity quality, we have made samples with longer;polariton lifetimes. With a photon lifetime on the order of 100-200 ps,;polaritons in these structures can not only come closer to reaching true;thermal equilibrium, a desired feature for many researchers working in;this field, but they can also travel much longer distances. We observe;the polaritons to ballistically travel on the order of 1 mm, and at;higher densities we see transport of a coherent condensate, or;quasicondensate, over comparable distances. In this paper we report a;quantitative analysis of the flow of the polaritons both in a low-;density, classical regime, and in the coherent regime at higher density.;Our analysis gives us a measure of the intrinsic lifetime for photon;decay from the microcavity and a measure of the strength of interactions;of the polaritons.;0;0;0;0;0;1098-0121;WOS:000332159200002;;;J;Sun, Dan;Wu, W.;Grigera, S. A.;Perry, R. S.;Mackenzie, A. P.;Julian, S. R.;Pressure study of nematicity and quantum criticality in Sr3Ru2O7 for an;in- plane field;PHYSICAL REVIEW B;88;23;235129;10.1103/PhysRevB.88.235129;DEC 27 2013;2013;We study the relationship between the nematic phases of Sr3Ru2O7 and;quantum criticality. At ambient pressure, one nematic phase is;associated with a metamagnetic quantum critical end point (QCEP) when;the applied magnetic field is near the c axis. We show, however, that;this metamagnetic transition does not produce the same nematic;signatures when the QCEP is reached by hydrostatic pressure with the;field applied in the ab plane. Moreover, a second nematic phase, that is;seen for field applied in the ab plane close to, but not right at, a;second metamagnetic anomaly, persists with minimal change to the highest;applied pressure, 16.55 kbar. Taken together our results suggest that;metamagnetic quantum criticality may not be necessary for the formation;of a nematic phase in Sr3Ru2O7.;0;0;0;0;0;1098-0121;WOS:000332159200001;;;J;Wierzbicki, M.;Swirkowicz, R.;Barnas, J.;Giant spin thermoelectric efficiency in ferromagnetic graphene;nanoribbons with antidots;PHYSICAL REVIEW B;88;23;235434;10.1103/PhysRevB.88.235434;DEC 27 2013;2013;Thermoelectric effects in zigzag graphene nanoribbons with parallel;alignment of the edge spin polarizations are investigated theoretically.;Spin and charge thermopower, electrical and heat conductance, and charge;and spin thermoelectric efficiency are calculated numerically for;pristine nanoribbons as well as for nanoribbons with periodic;one-dimensional lattice of structural defects in the form of antidots.;It is shown that structural defects reduce thermal conductance due to;phonons and open gaps in the corresponding electronic spectrum. This, in;turn, leads to a significant enhancement of the Seebeck and spin Seebeck;coefficients as well as of the thermoelectric efficiency. A giant;enhancement appears in certain regions of chemical potential (controlled;by doping or external gate) and survives at room temperatures.;1;0;0;0;1;1098-0121;WOS:000332159200004;;;J;Apalkov, Vadym;Stockman, Mark I.;Metal nanofilm in strong ultrafast optical fields;PHYSICAL REVIEW B;88;24;245438;10.1103/PhysRevB.88.245438;DEC 26 2013;2013;We predict that a metal nanofilm subjected to an ultrashort (near-single;oscillation) optical pulse of a high field amplitude greater than or;similar to 3 V/A at normal incidence undergoes an ultrafast (at subcycle;times less than or similar to 1 fs) transition to a state resembling;semimetal. Its reflectivity is greatly reduced, while its transmissivity;and the optical field inside the metal are greatly increased. Despite;the metal being a centrosymmetric medium, the strong pulse causes net;charge transfer in the direction determined by the carrier envelope;phase (CEP) of the pulse, which is opposite to the direction of the;maximum field.;2;0;0;0;2;1098-0121;WOS:000331756500005;;;J;Brems, Steven;Liu, Haoliang;Temst, Kristiaan;Van Haesendonck, Chris;Rotation sense of the magnetization in the Co/CoO exchange-bias system;probed with anisotropic magnetoresistance measurements;PHYSICAL REVIEW B;88;21;214427;10.1103/PhysRevB.88.214427;DEC 26 2013;2013;The possibility of tracking the average rotation sense of the;magnetization vector of a ferromagnetic layer upon magnetization;reversal by means of magnetotransport measurements is explored. It is;demonstrated that the rotation sense of the ferromagnetic magnetization;vector during a hysteresis loop can be determined for the;polycrystalline Co/CoO exchange bias system by measuring the anisotropic;magnetoresistance (AMR) with a specific choice of the measurement;geometry. The AMR measurements reveal that the rotation direction of the;magnetization vector can be reversed by performing an in-plane;hysteresis loop with a magnetic field perpendicular to the cooling;field. This reversal can be directly linked to the experimental fact;that after training, i.e., after performing hysteresis loops with a;field along the cooling field direction, the average orientation of the;uncompensated magnetization of the granular CoO antiferromagnet can be;largely rotated back to the initial orientation after field cooling by;applying a perpendicular field with the appropriate amplitude and;orientation.;1;0;0;0;1;1098-0121;WOS:000331751200005;;;J;Cuadra, J.;Sarkar, D.;Vina, L.;Hvam, J. M.;Nalitov, A.;Solnyshkov, D.;Malpuech, G.;Polarized emission in polariton condensates: Switching in a;one-dimensional natural trap versus inversion in two dimensions;PHYSICAL REVIEW B;88;23;235312;10.1103/PhysRevB.88.235312;DEC 26 2013;2013;We perform polarization resolved spectroscopy of two-and one-dimensional;microcavity-polariton condensates, which are formed by exciting the;system in the optical parametric oscillator configuration. We observe;polarization inversion for linearly polarized pumping parallel to the;wire in both the 1D and 2D systems. As the polarization plane of the;pump is rotated, the degree of linear polarization of the 2D system;oscillates between orthogonal polarizations with the same period as that;of the pump. However, the 1D system switches abruptly between two states;of high degree of linear polarization with half the period. Two;complementary models, based on semiclassical Boltzmann kinetic equations;and the Gross-Pitaevskii equation, respectively, obtain an excellent;agreement with the experimental results, providing a deep insight into;the mechanisms responsible for the polarization switching.;Vina, Luis/E-9415-2012;Vina, Luis/0000-0002-6376-6703;0;0;0;0;0;1098-0121;WOS:000331754500006;;;J;Das, Subrat Kumar;Singh, Viveka Nand;Majumdar, Pinaki;Magnon spectrum in the domain ferromagnetic state of antisite-disordered;double perovskites;PHYSICAL REVIEW B;88;21;214428;10.1103/PhysRevB.88.214428;DEC 26 2013;2013;In their ideal structure, double perovskites such as Sr2FeMoO6 have;alternating Fe and Mo along each cubic axis, and a homogeneous;ferromagnetic metallic ground state. Imperfect annealing leads to the;formation of structural domains. The moments on mislocated Fe atoms that;adjoin each other across the domain boundary have an antiferromagnetic;coupling between them. This leads to a peculiar magnetic state, with;ferromagnetic domains coupled antiferromagnetically. At a short distance;the system exhibits ferromagnetic correlation while at large length;scales the net moment is strongly suppressed due to interdomain;cancellation. We provide a detailed description of the spin-wave;excitations of this complex magnetic state, obtained within a 1/S;expansion, for a progressively higher degree of mislocation, i.e.,;antisite disorder. At a given wave vector the magnons propagate at;multiple energies, related, crudely, to "domain confined" modes with;which they have a large overlap. We provide a qualitative understanding;of the trend observed with growing antisite disorder, and contrast these;results to the much broader spectrum that one obtains for uncorrelated;antisites.;0;0;0;0;0;1098-0121;WOS:000331751200006;;;J;Dugaev, V. K.;Katsnelson, M. I.;Edge scattering of electrons in graphene: Boltzmann equation approach to;the transport in graphene nanoribbons and nanodisks;PHYSICAL REVIEW B;88;23;235432;10.1103/PhysRevB.88.235432;DEC 26 2013;2013;We discuss the contribution of edge scattering to the conductance of;graphene nanoribbons and nanoflakes. Using different possible types of;the boundary conditions for the electron wave function at the edge, we;found dependences of the momentum relaxation time and conductance on the;geometric sizes and on the carrier density. We also consider the case of;ballistic nanoribbon and nanodisk, for which the edge scattering is the;main mechanism of momentum relaxation.;3;0;0;0;3;1098-0121;WOS:000331754500008;;;J;Fossati, Paul C. M.;Van Brutzel, Laurent;Chartier, Alain;Crocombette, Jean-Paul;Simulation of uranium dioxide polymorphs and their phase transitions;PHYSICAL REVIEW B;88;21;214112;10.1103/PhysRevB.88.214112;DEC 26 2013;2013;In this article first-principles DFT calculations and molecular dynamics;simulations using empirical potentials have been used to study four;different polymorphs of uranium dioxide that appear under high;compressive and tensile deformations. It has been found, as expected,;that the ground-state structure is the fluorite-type structure (space;group Fm (3) over barm). Under high compressive deformation urania;transforms into cotunnite-type structure (space group Pnma), as already;known experimentally. The calculated transition pressure is 28 GPa in;agreement with the experimental data. Under tensile deformation urania;transforms into either scrutinyite-type structure (space group Pbcn) or;rutile-type (space group P4(2)/mnm) structure. These two phases are;almost energetically degenerate; hence it is impossible to distinguish;which phase is the most favorable. The transition pressure for both;phases is found to be equal to -10 GPa. Subsequently, assessment of four;of the most used empirical potentials for UO2-Morelon, Arima, Basak, and;Yakub-have been carried out comparing the equations of state with those;found with DFT calculations. The Morelon potential has been found to be;the most accurate to describe the different urania polymorphs. Using;this empirical potential and a dedicated minimization procedure,;complete transition pathways between the ground state (Fm (3) over barm);and both tensile structures (Pbcn or P4(2)/mnm) are described. Finally,;uniaxial tensile load molecular dynamics simulations have been;performed. It has been found that for load in the AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Bakr, M.;Souliou, S. M.;Blanco-Canosa, S.;Zegkinoglou, I.;Gretarsson, H.;Strempfer, J.;Loew, T.;Lin, C. T.;Liang, R.;Bonn, D. A.;Hardy, W. N.;Keimer, B.;Le Tacon, M.;Lattice dynamical signature of charge density wave formation in;underdoped YBa2Cu3O6+x;PHYSICAL REVIEW B;88;21;214517;10.1103/PhysRevB.88.214517;DEC 31 2013;2013;We report a detailed Raman scattering study of the lattice dynamics in;detwinned single crystals of the underdoped high-temperature;superconductor YBa2Cu3O6+x (x = 0.75, 0.6, 0.55, and 0.45). Whereas at;room temperature the phonon spectra of these compounds are similar to;that of optimally doped YBa2Cu3O6.99, additional Raman-active modes;appear upon cooling below similar to 170-200Kin underdoped crystals. The;temperature dependence of these new features indicates that they are;associated with the incommensurate charge density wave state recently;discovered using synchrotron x-ray scattering techniques on the same;single crystals. Raman scattering thus has the potential to explore the;evolution of this state under extreme conditions.;Zegkinoglou, Ioannis/H-2343-2013; Le Tacon, Mathieu/D-8023-2011;Le Tacon, Mathieu/0000-0002-5838-3724;6;0;0;0;6;1098-0121;WOS:000332165200002;;;J;Benedicto, Jessica;Centeno, Emmanuel;Polles, Remi;Moreau, Antoine;Ultimate resolution of indefinite metamaterial flat lenses;PHYSICAL REVIEW B;88;24;245138;10.1103/PhysRevB.88.245138;DEC 31 2013;2013;We propose an approach allowing a systematic optimization of lenses;based on hyperbolic metamaterials. The lensing properties of these;highly anisotropic materials are summed up in a complex effective index;extracted from the complex dispersion relation. The analytical;expression of this effective index in the homogenization regime or its;direct computation from the Bloch band diagram in the resonant regime;leads to hyperbolic metamaterials that outperform the state-of-art flat;lenses. We show that feasible metal-dielectric multilayers provide;superresolved images for visible light (around 400 nm) even when fully;taking absorption into account.;0;0;0;0;0;1098-0121;WOS:000332166700001;;;J;Biswas, P. K.;Amato, A.;Baines, C.;Khasanov, R.;Luetkens, H.;Lei, Hechang;Petrovic, C.;Morenzoni, E.;Low superfluid density and possible multigap superconductivity in the;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;88;22;224515;10.1103/PhysRevB.88.224515;DEC 31 2013;2013;The magnetic penetration depth lambda as a function of temperature in;Bi4O4S3 was studied by muon-spin-spectroscopy measurements. The;superfluid density of Bi4O4S3 is found to be very low. The dependence of;lambda (2) on temperature possibly suggests the existence of two;s-wave-type energy gaps with the zero-temperature values of 0.93 (3) and;0.09 (4) meV. The upturn in the temperature dependence of the upper;critical field close to T-c further supports multigap superconductivity;in Bi4O4S3. The presence of two superconducting energy gaps is;consistent with theoretical and other experimental studies. However, a;single-gap s-wave model fit with a gap of 0.88 (2) meV cannot be ruled;out completely. The value of lambda(T) at T = 0 K is estimated to be;lambda(0) = 861 (17) nm, one of the largest of all known layered;superconductors, reflecting a very low superfluid density.;Luetkens, Hubertus/G-1831-2011;4;0;0;0;4;1098-0121;WOS:000332166200005;;;J;Cao, G.;Qi, T. F.;Li, L.;Terzic, J.;Cao, V. S.;Yuan, S. J.;Tovar, M.;Murthy, G.;Kaul, R. K.;Evolution of magnetism in the single-crystal honeycomb iridates;(Na1-xLix)(2)IrO3;PHYSICAL REVIEW B;88;22;220414;10.1103/PhysRevB.88.220414;DEC 31 2013;2013;We report the successful synthesis of single crystals of the layered;iridate (Na1-xLix)(2)IrO3, 0 <= x <= 0.9, and a thorough study of its;structural, magnetic, thermal, and transport properties. This compound;allows a controlled interpolation between Na2IrO3 and Li2IrO3, while;maintaining the quantum magnetism of the honeycomb Ir4+ planes. The;measured phase diagram demonstrates a suppression of the Neel;temperature T-N at an intermediate x, indicating that the magnetic;orders in Na2IrO3 and Li2IrO3 are distinct. X-ray data show that for x;approximate to 0.7, when T-N is suppressed the most, the honeycomb;structure is least distorted, leading to the speculation that at this;intermediate doping of the material is closest to the spin liquid that;has been sought after in Na2IrO3 and Li2IrO3. By analyzing our magnetic;data with a single-ion theoretical model we also show that the trigonal;splitting on the Ir4+ ions changes sign from Na2IrO3 to Li2IrO3.;8;0;0;0;8;1098-0121;WOS:000332166200001;;;J;Farr, Warrick G.;Creedon, Daniel L.;Goryachev, Maxim;Benmessai, Karim;Tobar, Michael E.;Ultrasensitive microwave spectroscopy of paramagnetic impurities in;sapphire crystals at millikelvin temperatures;PHYSICAL REVIEW B;88;22;224426;10.1103/PhysRevB.88.224426;DEC 31 2013;2013;Progress in the emerging field of engineered quantum systems requires;the development of devices that can act as quantum memories. The;realization of such devices by doping solid-state cavities with;paramagnetic ions imposes a tradeoff between ion concentration and;cavity coherence time. Here, we investigate an alternative approach;involving interactions between photons and naturally occurring impurity;ions in ultrapure crystalline microwave cavities exhibiting;exceptionally high quality factors. We implement a hybrid whispering;gallery/electron spin resonance method to perform rigorous spectroscopy;of an undoped single-crystal sapphire resonator over the frequency range;8-19 GHz, and at external applied DC magnetic fields up to 0.9 T.;Measurements of high-purity sapphire cooled close to 100 mK reveal the;presence of Fe3+, Cr3+, and V2+ impurities. A host of electron;transitions are measured and identified, including the two-photon;classically forbidden quadrupole transition (Delta m(s) = 2) for Fe3+,;as well as hyperfine transitions of V2+.;Tobar, Michael/C-9763-2009; Creedon, Daniel/A-8772-2010; Goryachev, Maxim/K-5851-2013;Creedon, Daniel/0000-0003-2912-3381; Goryachev,;Maxim/0000-0002-0257-4054;5;0;0;0;5;1098-0121;WOS:000332166200004;;;J;Joseph, B.;Bendele, M.;Simonelli, L.;Maugeri, L.;Pyon, S.;Kudo, K.;Nohara, M.;Mizokawa, T.;Saini, N. L.;Local structural displacements across the structural phase transition in;IrTe2: Order-disorder of dimers and role of Ir-Te correlations;PHYSICAL REVIEW B;88;22;224109;10.1103/PhysRevB.88.224109;DEC 31 2013;2013;We have studied local structure of IrTe2 by Ir L-3-edge extended x-ray;absorption fine structure (EXAFS) measurements as a function of;temperature to investigate origin of the observed structural phase;transition at T-s similar to 270 K. The EXAFS results show an appearance;of longer Ir-Te bond length (Delta R similar to 0.05 angstrom) at T <;T-s. We have found Ir-Ir dimerization, characterized by distinct Ir-Ir;bond lengths (Delta R similar to 0.13 angstrom), existing both above and;below T-s. The results suggest that the phase transition in IrTe2 should;be an order-disorder-like transition of Ir-Ir dimers assisted by Ir-Te;bond correlations, thus indicating important role of the interaction;between the Ir 5d and Te 5p orbitals in this transition.;KUDO, Kazutaka/B-1468-2011; NOHARA, Minoru/B-1476-2011;3;0;0;0;3;1098-0121;WOS:000332166200003;;;J;Kobayashi, Keita;Machida, Masahiko;Ota, Yukihiro;Nori, Franco;Massless collective excitations in frustrated multiband superconductors;PHYSICAL REVIEW B;88;22;224516;10.1103/PhysRevB.88.224516;DEC 31 2013;2013;We study collective excitations in three- and four-band superconductors;with interband frustration, which causes neither 0 nor pi interband;phases in the superconducting state. Using a low-energy spin Hamiltonian;originating from a multiband tight-binding model, we find that mass;reduction of a Leggett mode occurs in a wide parameter region of this;four-band system. As a limiting case, we have a massless Leggett mode.;This massless mode is related to the fact that the mean-field energy;does not depend on a relative phase of superconducting order parameters.;In other words, we find a link of the massless mode with a degeneracy;between a time-reversal-symmetry-breaking state (neither 0 nor pi;phases) and a time-reversal-symmetric state (either 0 or pi phases).;Therefore, the mass of collective modes characterizes well the;time-reversal symmetry in frustrated multiband superconductors.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332166200006;;;J;Ohtsubo, Yoshiyuki;Yaji, Koichiro;Hatta, Shinichiro;Okuyama, Hiroshi;Aruga, Tetsuya;Two-dimensional states localized in subsurface layers of Ge(111);PHYSICAL REVIEW B;88;24;245310;10.1103/PhysRevB.88.245310;DEC 31 2013;2013;The origin of the two-dimensional surface states localized in subsurface;regions of the Ge(111) substrate has been studied by;density-functional-theory calculations, which were compared with the;experimental results of angle-resolved photoelectron spectroscopy. For;the Bi/Ge(111)-(root 3 x root 3)R30 degrees, Br/Ge(111)-(1x1), and;Tl/Ge(111)-(1x1) surfaces, we found that the surface states are;classified into three groups. The energy dispersion and the orbital;character for each band implies the relationship between the subsurface;states and the bulk heavy-hole, light-hole, and spin-orbit split-off;bands. These results indicate that the subsurface states originate from;the bulk bands that are perturbed due to the truncation of the;three-dimensional periodicity at the surface.;Okuyama, Hiroshi/H-7570-2014;1;0;0;0;1;1098-0121;WOS:000332166700002;;;J;Oiwake, M.;Ootsuki, D.;Noji, T.;Hatakeda, T.;Koike, Y.;Horio, M.;Fujimori, A.;Saini, N. L.;Mizokawa, T.;Electronic structure and phase separation of superconducting and;nonsuperconducting KxFe2-ySe2 revealed by x-ray photoemission;spectroscopy;PHYSICAL REVIEW B;88;22;224517;10.1103/PhysRevB.88.224517;DEC 31 2013;2013;We have investigated the electronic structure of superconducting (SC);and nonsuperconducting (non-SC) KxFe2-ySe2 using x-ray photoemission;spectroscopy (XPS). The spectral shape of the Fe 2p XPS is found to;depend on the amount of Fe vacancies. The Fe 2p(3/2) peak of the SC and;non-SC Fe-rich samples is accompanied by a shoulder structure on the;lower binding energy side, which can be attributed to the metallic phase;embedded in the Fe2+ insulating phase. The absence of the shoulder;structure in the non-SC Fe-poor sample allows us to analyze the Fe 2p;spectra using a FeSe4 cluster model. The Fe 3d-Se 4p charge-transfer;energy of the Fe2+ insulating phase is found to be similar to 2.3 eV;which is smaller than the Fe 3d-Fe 3d Coulomb interaction of similar to;3.5 eV. This indicates that the Fe2+ insulating state is the;charge-transfer type in the Zaanen-Sawatzky-Allen scheme. We also find a;substantial change in the valence-band XPS as a function of Fe content;and temperature. The metallic state at the Fermi level is seen in the SC;and non-SC Fe-rich samples and tends to be enhanced with cooling in the;SC sample.;0;0;0;0;0;1098-0121;WOS:000332166200007;;;J;Park, Keeseong;Nomura, Yusuke;Arita, Ryotaro;Llobet, Anna;Louca, Despina;Local strain and anharmonicity in the bonding of Bi2Se3-xTex topological;insulators;PHYSICAL REVIEW B;88;22;224108;10.1103/PhysRevB.88.224108;DEC 31 2013;2013;Using neutron diffraction and the pair density function analysis, the;local atomic structure of the three-dimensional Bi2Se3-xTex (x = 0, 1,;2, and 3) topological insulator is investigated. The substitution of Te;for Se in Bi2Se3-xTex (x = 0, 1, 2, and 3) is not random and its;preferred site is at the edges of the quintuple layer. This generates a;local strain due to the atom size mismatch between Se and Te. The site;preference is surprising given that the Bi to chalcogen bonds are;strongest when the ions are at the edges than in the middle layer. The;(Se/Te) atoms in the middle sublayer of the quintuple are coupled more;softly to the Bi atoms than those of the edges and have lower Debye;temperatures. This suggests that the atomic properties within the;quintuple layer are different than those at the edges. Additionally, the;results from band structure and density of state calculations are;reported to show the dependence of doping and temperature.;Arita, Ryotaro/D-5965-2012; Llobet, Anna/B-1672-2010;Arita, Ryotaro/0000-0001-5725-072X;;0;0;0;0;0;1098-0121;WOS:000332166200002;;;J;Pogorelov, Y. G.;Santos, M. C.;Loktev, V. M.;Impurity effects on electronic transport in ferropnictide;superconductors;PHYSICAL REVIEW B;88;22;224518;10.1103/PhysRevB.88.224518;DEC 31 2013;2013;Effects of impurities and disorder on transport properties by electronic;quasiparticles in superconducting iron pnictides are theoretically;considered. The most prominent new features compared to the case of pure;material should appear at high enough impurity concentration when a;specific narrow band of conducting quasiparticle states can develop;within the superconducting gap, around the position of localized;impurity level by a single impurity center. The predicted specific;threshold effects in the frequency-dependent optical conductivity and;temperature-dependent thermal conductivity and also in Seebeck and;Peltier coefficients can have interesting potentialities for practical;applications.;0;0;0;0;0;1098-0121;WOS:000332166200008;;;J;Reich, K. V.;Chen, T.;Efros, Al. L.;Shklovskii, B. I.;Photoluminescence in arrays of doped semiconductor nanocrystals;PHYSICAL REVIEW B;88;24;245311;10.1103/PhysRevB.88.245311;DEC 31 2013;2013;We study the dependence of the quantum yield of photoluminescence of a;dense, periodic array of semiconductor nanocrystals (NCs) on the level;of doping and NC size. Electrons introduced to NCs via doping quench;photoluminescence by the Auger process, so that practically only NCs;without electrons contribute to the photoluminescence. Computer;simulation and analytical theory are used to find a fraction of such;empty NCs as a function of the average number of donors per NC and NC;size. For an array of small spherical NCs, the quantization gap between;1S and 1P levels leads to transfer of electrons from NCs with large;number of donors to those without donors. As a result, empty NCs become;extinct, and photoluminescence is quenched abruptly at an average number;of donors per NC close to 1.8. The relative intensity of;photoluminescence is shown to correlate with the type of hopping;conductivity of an array of NCs.;2;0;0;0;2;1098-0121;WOS:000332166700003;;;J;Rousse, Gwenaelle;Rodriguez-Carvajal, Juan;Wurm, Calin;Masquelier, Christian;Spiral magnetic structure in the iron diarsenate LiFeAs2O7: A neutron;diffraction study;PHYSICAL REVIEW B;88;21;214433;10.1103/PhysRevB.88.214433;DEC 31 2013;2013;The magnetic structure of LiFeAs2O7 (monoclinic, space group C2) has;been solved using neutron powder diffraction. This compound presents an;antiferromagnetic behavior characterized by a long-range ordering;observed in the neutron diffraction patterns below the Neel temperature;(T-N = 35 K). The magnetic structure is found to be incommensurate with;respect to the nuclear structure, the magnetic peaks being indexed with;a propagation vector k = (0.709, 0, 0.155). The magnetic moments form a;general spiral (helical-cycloidal) arrangement with a constant magnetic;moment of 4.21 mu B. The magnetic structure is discussed in terms of;super-super exchange interactions involving two oxygen atoms belonging;to an AsO4 tetrahedron, and compared with the magnetic structure of the;di-phosphate analogue LiFeP2O7. The presence of triangular super-super;exchange paths is believed to be at the origin of this incommensurate;magnetic structure. The potential of LiFeAs2O7 as a possible;multiferroic material is discussed.;Rodriguez-Carvajal, Juan/C-4362-2008;Rodriguez-Carvajal, Juan/0000-0001-5582-2632;1;0;0;0;1;1098-0121;WOS:000332165200001;;;J;Smith, Peter M.;Kennett, Malcolm P.;Disorder effects on superconducting tendencies in the checkerboard;Hubbard model;PHYSICAL REVIEW B;88;21;214518;10.1103/PhysRevB.88.214518;DEC 31 2013;2013;The question of whether spatially inhomogeneous hopping in the two;dimensional Hubbard model can lead to enhancement of superconductivity;has been tackled by a number of authors in the context of the;checkerboard Hubbard model (CHM). We address the effects of disorder on;superconducting properties of the CHM by using exact diagonalization;calculations for both potential and hopping disorder. We characterize;the superconducting tendencies of the model by focusing on the;pair-binding energy, the spin gap, and d-wave pairing order parameter.;We find that superconducting tendencies, particularly the pair-binding;energy, are more robust to disorder when there is inhomogeneous hopping;than for the uniform Hubbard model. We also study all possible staggered;potentials for an eight-site CHM cluster and relate the behavior of;these configurations to the disordered system.;Kennett, Malcolm/I-2898-2012;1;0;0;0;1;1098-0121;WOS:000332165200003;;;J;Cortes-Huerto, R.;Sondon, T.;Saul, A.;Role of temperature in the formation and growth of gold monoatomic;chains: A molecular dynamics study;PHYSICAL REVIEW B;88;23;235438;10.1103/PhysRevB.88.235438;DEC 31 2013;2013;The effect of temperature on the formation and growth of monoatomic;chains is investigated by extensive molecular dynamics simulations using;a semiempirical potential based on the second-moment approximation to;the tight-binding Hamiltonian. Gold nanowires, with an aspect ratio of;similar to 13 and a cross section of similar to 1 nm(2), are stretched;at a rate of 3 m/s in the range of temperatures 5-600 K with 50 initial;configurations per temperature. A detailed study on the probability to;form monoatomic chains (MACs) is presented. Two domains are apparent in;our simulations: one at T < 100 K, where MACs develop from crystalline;disorder at the constriction, and the other at T > 100 K, where MACs;form as a consequence of plastic deformation of the nanowire. Our;results show that the average length of the formed MACs maximizes at T =;150 K, which is supported by simple energy arguments.;0;0;0;0;0;1098-0121;WOS:000332166400004;;;J;Despoja, V.;Loncaric, I.;Mowbray, D. J.;Marusic, L.;Quasiparticle spectra and excitons of organic molecules deposited on;substrates: G(0)W(0)-BSE approach applied to benzene on graphene and;metallic substrates;PHYSICAL REVIEW B;88;23;235437;10.1103/PhysRevB.88.235437;DEC 31 2013;2013;We present an alternative methodology for calculating the quasiparticle;energy, energy loss, and optical spectra of a molecule deposited on;graphene or a metallic substrate. To test the accuracy of the method it;is first applied to the isolated benzene (C6H6) molecule. The;quasiparticle energy levels and especially the energies of the benzene;excitons (triplet, singlet, optically active and inactive) are in very;good agreement with available experimental results. It is shown that the;vicinity of the various substrates [pristine/doped graphene or (jellium);metal surface] reduces the quasiparticle highest occupied molecular;orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap by an amount;that slightly depends on the substrate type. This is consistent with the;simple image theory predictions. It is even shown that the substrate;does not change the energy of the excitons in the isolated molecule. We;prove (in terms of simple image theory) that energies of the excitons;are indeed influenced by two mechanisms which cancel each other. We;demonstrate that the benzene singlet optically active (E-1u) exciton;couples to real electronic excitations in the substrate. This causes it;substantial decay, such as Gamma approximate to 174 meV for pristine;graphene and Gamma approximate to 362 meV for metal surfaces as the;substrate. However, we find that doping graphene does not influence the;E-1u exciton decay rate.;Mowbray, Duncan/A-5531-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Loncaric, Ivor/J-6677-2014;Mowbray, Duncan/0000-0002-8520-0364; Loncaric, Ivor/0000-0002-5554-4641;2;0;0;0;2;1098-0121;WOS:000332166400003;;;J;Dutt, Prasenjit apq;Le Hur, Karyn;Strongly correlated thermoelectric transport beyond linear response;PHYSICAL REVIEW B;88;23;235133;10.1103/PhysRevB.88.235133;DEC 31 2013;2013;We investigate nonlinear thermoelectric transport through quantum;impurity systems with strong on-site interactions. We show that the;steady-state transport through interacting quantum impurities in contact;with electron reservoirs at significantly different temperatures can be;captured by an effective-equilibrium density matrix, expressed compactly;in terms of the Lippmann-Schwinger operators of the system. In addition,;the reservoirs can be maintained at arbitrary chemical potentials. The;interplay between the temperature gradient and bias voltage gives rise;to a nontrivial breaking of particle-hole symmetry in the strongly;correlated regime, manifest in the Abrikosov-Suhl localized electron;resonance. This purely many-body effect, which is in agreement with;experimental results, is beyond the purview of mean-field arguments.;2;0;0;0;2;1098-0121;WOS:000332166400001;;;J;Li, Yunpu;King, Jonathan P.;Reimer, Jeffrey A.;Meriles, Carlos A.;Near-band-gap photoinduced nuclear spin dynamics in semi-insulating;GaAs: Hyperfine- and quadrupolar-driven relaxation;PHYSICAL REVIEW B;88;23;235211;10.1103/PhysRevB.88.235211;DEC 31 2013;2013;Understanding and manipulating spin polarization and transport in the;vicinity of semiconductor-hosted defects is a problem of present;technological and fundamental importance. Here, we use high-field;magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei;in semi-insulating GaAs. Our experiments benefit from the conditions;created in the limit of low illumination intensities, where intermittent;occupation of the defect site by photoexcited electrons leads to;electric field gradient fluctuations and concomitant spin relaxation of;the neighboring quadrupolar nuclei. We find indication of a;heterogeneous distribution of polarization, governed by different;classes of defects activated by either weak or strong laser excitation.;Upon application of a train of light pulses of variable repetition rate;and on/off ratio, we uncover an intriguing regime of mesoscale nuclear;spin diffusion restricted by long-range, nonuniform electric field;gradients. Given the slow time scale governing nuclear spin evolution,;such optically induced polarization patterns could be exploited as a;contrast mechanism to expose dark lattice defects or localized charges;with nanoscale resolution.;0;0;0;0;0;1098-0121;WOS:000332166400002;;;J;Adolff, Christian F.;Haenze, Max;Vogel, Andreas;Weigand, Markus;Martens, Michael;Meier, Guido;Self-organized state formation in magnonic vortex crystals;PHYSICAL REVIEW B;88;22;224425;10.1103/PhysRevB.88.224425;DEC 30 2013;2013;We study the polarization-state formation in magnonic vortex crystals;via scanning transmission x-ray microscopy. Self-organized state;formation is observed by adiabatic reduction of a high-frequency field;excitation. The emerging polarization patterns are shown to depend on;the frequency of excitation and the strength of the dipolar interaction;between the elements. In spite of the complexity of the investigated;system, global order caused by local interactions creates polarization;states with a high degree of symmetry. A fundamental dipole model and;coupled equations of motion are adopted to analytically describe the;experimental results. The emerging states can be predicted by a;fundamental stability criterion based on the excitability of eigenmodes;in the crystal. Micromagnetic simulations give additional insight into;the underlying processes.;2;0;0;0;2;1098-0121;WOS:000332162300008;;;J;Berridge, A. M.;Green, A. G.;Nonequilibrium conductivity at quantum critical points;PHYSICAL REVIEW B;88;22;220512;10.1103/PhysRevB.88.220512;DEC 30 2013;2013;Quantum criticality provides an important route to revealing universal;nonequilibrium behavior. A canonical example of a critical point is the;Bose-Hubbard model, which we study under the application of an electric;field. A Boltzmann transport formalism and is an element of expansion;are used to obtain the nonequilibrium conductivity and current noise.;This approach allows us to explicitly identify how a universal;nonequilibrium steady state is maintained, by identifying the;rate-limiting step in balancing Joule heating and dissipation to a heat;bath. It also reveals that the nonequilibrium distribution function is;very far from a thermal distribution.;1;0;0;0;1;1098-0121;WOS:000332162300004;;;J;Bojesen, Troels Arnfred;Babaev, Egor;Sudbo, Asle;Time reversal symmetry breakdown in normal and superconducting states in;frustrated three-band systems;PHYSICAL REVIEW B;88;22;220511;10.1103/PhysRevB.88.220511;DEC 30 2013;2013;We discuss the phase diagram and phase transitions in U(1) x Z(2);three-band superconductors with broken time reversal symmetry. We find;that beyond mean-field approximation and for sufficiently strong;frustration of interband interactions there appears an unusual metallic;state precursory to a superconducting phase transition. In that state,;the system is not superconducting. Nonetheless, it features a;spontaneously broken Z(2) time reversal symmetry. By contrast, for weak;frustration of interband coupling the energy of a domain wall between;different Z(2) states is low and thus fluctuations restore broken time;reversal symmetry in the superconducting state at low temperatures.;2;0;0;0;2;1098-0121;WOS:000332162300003;;;J;Gracia-Salgado, Rogelio;Garcia-Chocano, Victor M.;Torrent, Daniel;Sanchez-Dehesa, Jose;Negative mass density and rho-near-zero quasi-two-dimensional;metamaterials: Design and applications;PHYSICAL REVIEW B;88;22;224305;10.1103/PhysRevB.88.224305;DEC 30 2013;2013;We report the design and the characterization of artificial structures;made of periodical distributions of structured cylindrical scatterers;embedded in a two-dimensional (2D) waveguide. For certain values of;their geometrical parameters they show simultaneously negative effective;bulk modulus and negative effective mass density. Here our analysis is;focused on the frequencies where they behave like materials with;negative density or density near zero (DNZ). The scattering units;consist of a rigid cylindrical core surrounded by an anisotropic shell;divided in angular sectors. The units are embedded in a 2D waveguide;whose height is smaller than the length of the cylinders, which makes;the structure quasi-2D. We have obtained the dispersion relation of the;surface acoustic waves excited at frequencies with negative effective;density. Also, we report phenomena associated with their DNZ behavior,;such as tunneling through narrow channels, control of the radiation;field, perfect transmission through sharp corners, and power splitting.;Preliminary experiments performed on samples with millimeter-scale;dimensions demonstrated their single-negative behavior, with the main;drawback being the strong losses measured at the frequencies where the;negative behavior is observed.;sanchez-dehesa, jose/L-9726-2014;1;0;0;0;1;1098-0121;WOS:000332162300006;;;J;Klar, D.;Brena, B.;Herper, H. C.;Bhandary, S.;Weis, C.;Krumme, B.;Schmitz-Antoniak, C.;Sanyal, B.;Eriksson, O.;Wende, H.;Oxygen-tuned magnetic coupling of Fe-phthalocyanine molecules to;ferromagnetic Co films;PHYSICAL REVIEW B;88;22;224424;10.1103/PhysRevB.88.224424;DEC 30 2013;2013;The coupling of submonolayer coverages of Fe-phthalocyanine molecules on;bare and oxygen-covered ferromagnetic Co(001) films was studied by;x-ray-absorption spectroscopy, especially the x-ray magnetic circular;dichroism, in combination with density functional theory. We observe;that the magnetic moments of the paramagnetic molecules are aligned even;at room temperature, resulting from a magnetic coupling to the;substrate. While the magnetization of the Fe ions directly adsorbed on;the Co surface is parallel to the magnetization of the Co film, the;introduction of an oxygen interlayer leads to an antiparallel alignment.;As confirmed by theory, the coupling strength is larger for the system;FePc/Co than for FePc/O/Co, causing a stronger temperature dependence of;the Fe magnetization for the latter system. Furthermore, the;calculations reveal that the coupling mechanism changes due to the O;layer from mostly direct exchange to Co of the bare surface to a 180;degrees antiferromagnetic superexchange via the O atoms. Finally, by;comparing the experimental x-ray-absorption spectra at the N K edge with;the corresponding calculations, the contribution of the individual;orbitals has been determined and the two inequivalent N atoms of the;molecules could be distinguished.;Wende, Heiko/J-8505-2012; Schmitz-Antoniak, Carolin/C-2234-2009;Schmitz-Antoniak, Carolin/0000-0002-8450-3515;3;0;0;0;3;1098-0121;WOS:000332162300007;;;J;Moor, Andreas;Volkov, Anatoly F.;Efetov, Konstantin B.;Time-dependent equation for the magnetic order parameter near the;quantum critical point in multiband superconductors with a spin-density;wave;PHYSICAL REVIEW B;88;22;224513;10.1103/PhysRevB.88.224513;DEC 30 2013;2013;Using a simple two-band model for Fe-based pnictides and the generalized;Eilenberger equation, we present a microscopic derivation of a;time-dependent equation for the amplitude of the spin-density wave near;the quantum critical point where it turns to zero. This equation;describes the dynamics of the magnetic (m), as well as the;superconducting order parameter (Delta). It is valid at low temperatures;T and small m (T, m << Delta) in a region of coexistence of both order;parameters, m and Delta. The boundary of this region is found in the;space of the nesting parameter {mu(0), mu(f)}, where mu(0) describes the;relative position of the electron and the hole pockets on the energy;scale and mu(phi) accounts for the ellipticity of the electron pocket.;At low T the number of quasiparticles is small due to the presence of;the energy gap Delta, and therefore the quasiparticles do not play a;role in the relaxation of m. This circumstance allows one to derive the;time-dependent equation for m in contrast to the case of conventional;superconductors for which the time-dependent Ginzburg-Landau equation;can be derived near T-c only in some special cases (high concentration;of paramagnetic impurities) [L. P. Gor'kov and G. M. Eliashberg, Sov.;Phys. JETP 27, 328 (1968)]. In the stationary case the derived equation;is valid at arbitrary temperatures. We find a solution of the stationary;equation which describes a domain wall in the magnetic structure. In the;center of the domain wall the superconducting order parameter has a;maximum, which means a local enhancement of superconductivity. Using the;derived time-dependent equation for m, we investgate also the stability;of a uniform commensurate spin-density wave (SDW) and obtain the values;of {mu(0), mu(f)} at which the first-order transition into the state;with m = 0 takes place or the transition to the state with an;inhomogeneous SDW occurs.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000332162300009;;;J;Singh, Yogesh;Tokiwa, Y.;Dong, J.;Gegenwart, P.;Spin liquid close to a quantum critical point in Na4Ir3O8;PHYSICAL REVIEW B;88;22;10.1103/PhysRevB.88.220413;DEC 30 2013;2013;Na4Ir3O8 is a candidate material for a three-dimensional quantum spin;liquid on the hyperkagome lattice. We present thermodynamic measurements;of heat capacity C and thermal conductivity kappa on high-quality;polycrystalline samples of Na4Ir3O8 down to T = 500 and 75 mK,;respectively. Absence of long-range magnetic order down to T = 75 mK;strongly supports claims of a spin-liquid ground state. The constant;magnetic susceptibility chi below T approximate to 25 K and the presence;of a small but finite linear-T term in C(T) suggest the presence of;gapless spin excitations. Additionally, the magnetic Gruneisen ratio;shows a divergence as T -> 0 K and a scaling behavior, which clearly;demonstrates that Na4Ir3O8 is situated close to a zero-field QCP.;Dong, Jinkui/J-3603-2013;2;0;0;0;2;1098-0121;WOS:000332162300002;;;J;Taen, Toshihiro;Ohtake, Fumiaki;Akiyama, Hiroki;Inoue, Hiroshi;Sun, Yue;Pyon, Sunseng;Tamegai, Tsuyoshi;Pair-breaking effects induced by 3-MeV proton irradiation in;Ba1-xKxFe2As2;PHYSICAL REVIEW B;88;22;224514;10.1103/PhysRevB.88.224514;DEC 30 2013;2013;Pair-breaking effects induced by 3-MeV proton irradiations are examined;in underdoped, optimally doped, and overdoped Ba1-xKxFe2As2 single;crystals in terms of suppression of the superconducting critical;temperature T-c. The small residual resistivity (RR) in as-grown;crystals shows the presence of negligible intrinsic scatterings, which;makes this material a model system for studying the effect of;artificially introduced scatterings. The RR and Tc change linearly with;the proton dose. As in the case of proton irradiation in Co-doped;BaFe2As2, we do not detect any low-temperature upturns in resistivity;attributable to magnetic scattering or localization. Regardless of K;doping levels, the critical value of the normalized scattering rate is;much higher than that expected in s(perpendicular to)-wave;superconductors.;悦, å™/B-1373-2013;悦, å™/0000-0002-5189-5460;3;0;0;0;3;1098-0121;WOS:000332162300010;;;J;Yan, Ming;Kakay, Attila;Andreas, Christian;Hertel, Riccardo;Spin-Cherenkov effect and magnonic Mach cones;PHYSICAL REVIEW B;88;22;220412;10.1103/PhysRevB.88.220412;DEC 30 2013;2013;We report on the Cherenkov-type excitation of spin waves (SWs) in;ferromagnets. Our micromagnetic simulations show that a localized;magnetic field pulse moving sufficiently fast along the surface of a;ferromagnet generates a SW boom, with a Mach-type cone of propagating;wave fronts. The SWs are formed when the velocity of the source exceeds;the propagation speed of SWs. Unlike the single cone of the usual;Cherenkov effect, we find that the magnetic Mach cone consists of two;wave fronts with different wave numbers. In patterned thin strips, this;magnetic analog of the Cherenkov effect should enable the excitation of;SWs with well-defined and velocity-dependent frequency. It thereby;provides a promising route towards tunable SW generation, with important;potential for applications in magnonic devices.;2;0;0;0;2;1098-0121;WOS:000332162300001;;;J;Yang, Lusann;Ceder, Gerbrand;Data-mined similarity function between material compositions;PHYSICAL REVIEW B;88;22;224107;10.1103/PhysRevB.88.224107;DEC 30 2013;2013;A new method for assessing the similarity of material compositions is;described. A similarity measure is important for the classification and;clustering of compositions. The similarity of the material compositions;is calculated utilizing a data-mined ionic substitutional similarity;based upon the probability with which two ions will substitute for each;other within the same structure prototype. The method is validated via;the prediction of crystal structure prototypes for oxides from the;Inorganic Crystal Structure Database, selecting the correct prototype;from a list of known prototypes within five guesses 75% of the time. It;performs particularly well on the quaternary oxides, selecting the;correct prototype from a list of known prototypes on the first guess 65%;of the time.;1;0;0;0;1;1098-0121;WOS:000332162300005;;;J;Bartelt, Norman C.;Nie, Shu;Starodub, Elena;Bernal-Villamil, Ivan;Gallego, Silvia;Vergara, Lucia;McCarty, Kevin F.;de la Figuera, Juan;Order-disorder phase transition on the (100) surface of magnetite;PHYSICAL REVIEW B;88;23;235436;10.1103/PhysRevB.88.235436;DEC 30 2013;2013;Using low-energy electron diffraction, we show that the room-temperature;(root 2 x root 2) R45 degrees reconstruction of Fe3O4(100) reversibly;disorders at similar to 450 degrees C. Short-range order persists above;the transition, suggesting that the transition is second order and;Ising-like. We interpret the transition in terms of a model in which;subsurface Fe3+ is replaced by Fe2+ as the temperature is raised. This;model reproduces the structure of antiphase boundaries previously;observed with scanning tunneling microscopy, as well as the continuous;nature of the transition. To account for the observed transition;temperature, the energy cost of each charge rearrangement is 82 meV.;de la Figuera, Juan/E-7046-2010; Gallego Queipo, Silvia/J-3411-2012;de la Figuera, Juan/0000-0002-7014-4777;;1;0;0;0;1;1098-0121;WOS:000332163500007;;;J;Cazorla, Claudio;Iniguez, Jorge;Insights into the phase diagram of bismuth ferrite from quasiharmonic;free-energy calculations;PHYSICAL REVIEW B;88;21;214430;10.1103/PhysRevB.88.214430;DEC 30 2013;2013;We have used first-principles methods to investigate the phase diagram;of multiferroic bismuth ferrite (BiFeO3 or BFO), revealing the energetic;and vibrational features that control the occurrence of various relevant;structures. More precisely, we have studied the relative stability of;four low-energy BFO polymorphs by computing their free energies within;the quasiharmonic approximation, introducing a practical scheme that;allows us to account for the main effects of spin disorder. As expected,;we find that the ferroelectric ground state of the material (with R3c;space group) transforms into an orthorhombic paraelectric phase (Pnma);upon heating. We show that this transition is not significantly affected;by magnetic disorder, and that the occurrence of the Pnma structure;relies on its being vibrationally (although not elastically) softer than;the R3c phase. We also investigate a representative member of the family;of nanotwinned polymorphs recently predicted for BFO [S. Prosandeev et;al., Adv. Funct. Mater. 23, 234 (2013)] and discuss their possible;stabilization at the boundaries separating the R3c and Pnma regions in;the corresponding pressure-temperature phase diagram. Finally, we;elucidate the intriguing case of the so-called supertetragonal phases of;BFO: Our results explain why such structures have never been observed in;the bulk material, despite their being stable polymorphs of very low;energy. Quantitative comparison with experiment is provided whenever;possible, and the relative importance of various physical effects;(zero-point motion, spin fluctuations, thermal expansion) and technical;features (employed exchange-correlation energy density functional) is;discussed. Our work attests the validity and usefulness of the;quasiharmonic scheme to investigate the phase diagram of this complex;oxide, and prospective applications are discussed.;Iniguez, Jorge/B-6856-2009;Iniguez, Jorge/0000-0001-6435-3604;0;0;0;0;0;1098-0121;WOS:000332161300005;;;J;Chandrasekaran, Anand;Damjanovic, Dragan;Setter, Nava;Marzari, Nicola;Defect ordering and defect-domain-wall interactions in PbTiO3: A;first-principles study;PHYSICAL REVIEW B;88;21;214116;10.1103/PhysRevB.88.214116;DEC 30 2013;2013;The properties of ferroelectric materials, such as lead zirconate;titanate (PZT), are heavily influenced by the interaction of defects;with domain walls. These defects are either intrinsic or are induced by;the addition of dopants. We study here PbTiO3 (the end member of a key;family of solid solutions) in the presence of acceptor (Fe) and donor;(Nb) dopants, and the interactions of the different defects and defect;associates with the domain walls. For the case of iron acceptors, the;calculations point to the formation of defect associates involving an;iron substitutional defect and a charged oxygen vacancy (Fe-Ti'-V-O '').;This associate exhibits a strong tendency to align in the direction of;the bulk polarization; in fact, ordering of defects is also observed in;pure PbTiO3 in the form of lead-oxygen divacancies. Conversely,;calculations on donor-doped PbTiO3 do not indicate the formation of;polar defect complexes involving donor substitutions. Last, it is;observed that both isolated defects in donor-doped materials and defect;associates in acceptor-doped materials are more stable at 180 degrees.;domain walls. However, polar defect complexes lead to asymmetric;potentials at domain walls due to the interaction of the defect;polarization with the bulk polarization. The relative pinning;characteristics of different defects are then compared, to develop an;understanding of defect-domain-wall interactions in both doped and pure;PbTiO3. These results may also help in understanding hardening and;softening mechanisms in PZT.;Damjanovic, Dragan/A-8231-2008;Damjanovic, Dragan/0000-0002-9596-7438;3;1;0;0;3;1098-0121;WOS:000332161300002;;;J;Choi, Minseok;Janotti, Anderson;Van de Walle, Chris G.;Native point defects in LaAlO3: A hybrid functional study;PHYSICAL REVIEW B;88;21;214117;10.1103/PhysRevB.88.214117;DEC 30 2013;2013;We investigate the electronic structure of defects in LaAlO3 (LAO) and;their effects on electronic properties of bulk and heterostructures. Our;calculations indicate that vacancies have lower formation energies than;interstitials and antisites. The La vacancy (V-La) and the Al vacancy;(V-Al) are deep acceptors, while the oxygen vacancy (VO) is a deep;donor. The impact of these defects on the performance of;metal-oxide-semiconductor devices is analyzed by placing the LAO band;edges and defect levels with respect to the band edges of GaN, InGaAs,;and Si. V-O introduces levels in the gap or in the vicinity of the;semiconductor conduction band, resulting in carrier traps and/or leakage;current through the gate oxide, while V-La and V-Al are sources of;negative fixed charges. We also discuss how oxygen vacancies in LAO can;influence the observed two-dimensional electron gas (2DEG) in;LaAlO3/SrTiO3 heterostructures. We conclude that V-O in the LAO layer;may provide electrons that fill compensating surface states, resulting;in higher 2DEG densities, at least for modest LAO layer thicknesses.;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;4;0;0;0;4;1098-0121;WOS:000332161300003;;;J;Haham, Noam;Konczykowski, Marcin;Kuiper, Bouwe;Koster, Gertjan;Klein, Lior;Testing dependence of anomalous Hall effect on resistivity in SrRuO3 by;its increase with electron irradiation;PHYSICAL REVIEW B;88;21;214431;10.1103/PhysRevB.88.214431;DEC 30 2013;2013;We measure the anomalous Hall effect (AHE) in several patterns of the;itinerant ferromagnet SrRuO3 before and after the patterns are;irradiated with electrons. The irradiation increases the resistivity of;the patterns due to the introduction of point defects and we find that;the AHE coefficient R-s scales with the total resistivity before and;after irradiation which indicates that the AHE is determined by the;total resistivity. We discuss possible origins of slight deviations from;scaling that are observed at low temperature, particularly below 70 K.;0;0;0;0;0;1098-0121;WOS:000332161300006;;;J;Heinhold, R.;Williams, G. T.;Cooil, S. P.;Evans, D. A.;Allen, M. W.;Influence of polarity and hydroxyl termination on the band bending at;ZnO surfaces;PHYSICAL REVIEW B;88;23;235315;10.1103/PhysRevB.88.235315;DEC 30 2013;2013;Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and;real-time in situ XPS were used to study the thermal stability of the;hydroxyl termination and downward band bending on the polar surfaces of;ZnO single crystals. On the O-polar face, the position of the Fermi;level could be reversibly cycled between the conduction band and the;band gap over an energetic distance of approximately 0.8 eV (similar to;1/4 of the band gap) by controlling the surface H coverage using simple;ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with;H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike;transition in the electronic nature of the O-polar face was observed at;an H coverage of approximately 0.9 monolayers. For H coverage less than;this, semiconducting (depleted) O-polar surfaces were created that were;reasonably stable in UHV conditions. In contrast, the downward band;bending on the Zn-polar face was significantly more resilient, and;depleted surfaces could not be prepared by heat treatment alone.;3;0;0;0;3;1098-0121;WOS:000332163500005;;;J;Levy, Peter M.;Yang, Hongxin;Chshiev, Mairbek;Fert, Albert;Spin Hall effect induced by Bi impurities in Cu: Skew scattering and;side-jump;PHYSICAL REVIEW B;88;21;214432;10.1103/PhysRevB.88.214432;DEC 30 2013;2013;The spin Hall effect (SHE) has recently turned out to be an interesting;tool for the conversion between charge and spin currents, the conversion;factor being characterized by the spin Hall angle Phi(H). Large spin;Hall angles have been now measured in heavy metals like W(Phi(H) =;-0.33) and Cu doped with Bi impurities (Phi(H) = -0.24). In this article;we express the contributions to the SHE induced by skew scattering and;scattering with side-jump from Bi impurities in Cu, and we use ab initio;calculations of the electronic structure of CuBi alloys to estimate the;values of these two contributions. The predominant effect comes from;skew scattering; the spin Hall angle is negative in agreement with;experiments, but the calculated amplitude is smaller.;Chshiev, Mairbek/A-9742-2008; Yang, HongXin/H-5719-2012;Chshiev, Mairbek/0000-0001-9232-7622;;0;0;0;0;0;1098-0121;WOS:000332161300007;;;J;Lu, Wenlai;Yang, Ping;Song, Wen Dong;Chow, Gan Moog;Chen, Jing Sheng;Control of oxygen octahedral rotations and physical properties in SrRuO3;films;PHYSICAL REVIEW B;88;21;214115;10.1103/PhysRevB.88.214115;DEC 30 2013;2013;Control of octahedral rotations in the ABO(3) perovskite oxides has been;of great interest due to its potential in rationally discovering and;designing new multifunctional phases. In this study, we show that;octahedral rotations of the SrRuO3 films can be controlled by oxygen;vacancies as well as by interfacial coupling, which further determines;the physical properties. Half-integer reflections using high-resolution;synchrotron x-ray diffraction were carried out to determine the;octahedral rotation pattern of SrRuO3 films on SrTiO3 substrates. The;transition of RuO6 rotation pattern accompanied by the structural change;from monoclinic P2(1)/m to tetragonal F4/mmc can be understood from the;preference of oxygen vacancies in the SrO atomic plane and the coupling;of octahedra across the interface between film and substrate. The field;angle dependence of magnetoresistance further confirmed the structural;phase transition with changes in octahedral rotations. The monoclinic;phase has the uniaxial magnetic easy axis 30 away from the [001];direction towards the [010] direction while the tetragonal phase has;uniaxial magnetic easy axis along the fourfold axis which is;perpendicular to the film surface. This study demonstrates the ability;to control the octahedral rotations in perovskite films and its;importance when designing thin films and multilayers with desired;functional property.;Chen, Jingsheng/D-9107-2011; Yang, Ping/C-5612-2008;1;0;0;0;1;1098-0121;WOS:000332161300001;;;J;Marcano, N.;Algarabel, P. A.;Rodriguez Fernandez, J.;Magen, C.;Morellon, L.;Singh, Niraj K.;Gschneidner, K. A., Jr.;Pecharsky, V. K.;Ibarra, M. R.;Effects of pressure on the magnetic-structural and Griffiths-like;transitions in Dy5Si3Ge;PHYSICAL REVIEW B;88;21;214429;10.1103/PhysRevB.88.214429;DEC 30 2013;2013;Magnetization studies have been performed on a polycrystalline sample of;Dy5Si3Ge as a function of an applied magnetic field (up to 50 kOe) and;hydrostatic pressure (up to 10 kbar) in the 5-300 K temperature range.;The anomalous behavior of the magnetic susceptibility indicates that a;Griffiths-like phase exists at low magnetic fields and pressures up to;10 kbar. We present evidence that the high-temperature second-order;ferromagnetic transition can be coupled with the low-temperature;first-order crystallographic transformation into a single first-order;magnetic-crystallographic transformation using a magnetic field and;hydrostatic pressure as tuning parameters. The effect of pressure on the;Griffiths-like phase is reported and analyzed in the framework of the;complex competition between the interslab and intraslab magnetic;interactions.;Magen, Cesar/A-2825-2013; Morellon, Luis/K-6922-2014; Marcano Aguado, Noelia/F-9446-2010;
12:54:3:1 Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition
DOI:10.1063/1.4754543 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Tian, W.;Yan, W. Y.;Hui, Xiong;Li, S. L.;Ding, Y. Y.;Li, Y.;Tian, Y.;Dai, J. N.;Fang, Y. Y.;Wu, Z. H.;Yu, C. H.;Chen, C. Q.;
12:54:3:2 Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer
DOI:10.1063/1.3573798 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Huang, C. C.;Xu, F. J.;Yan, X. D.;Song, J.;Xu, Z. Y.;Cen, L. B.;Wang, Y.;Pan, J. H.;Wang, X. Q.;Yang, Z. J.;Shen, B.;Zhang, B. S.;Chen, X. S.;Lu, W.;
12:54:3:3 Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells
DOI:10.1063/1.4874982 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, G.;Wang, X. Q.;Fu, K.;Rong, X.;Hashimoto, H.;Zhang, B. S.;Xu, F. J.;Tang, N.;Yoshikawa, A.;Ge, W. K.;Shen, B.;
12:54:3:4 Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
DOI:10.1063/1.4807131 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Chen, G.;Li, Z. L.;Wang, X. Q.;Huang, C. C.;Rong, X.;Sang, L. W.;Xu, F. J.;Tang, N.;Qin, Z. X.;Sumiya, M.;Chen, Y. H.;Ge, W. K.;Shen, B.;
12:54:3:5 Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice
DOI:10.1063/1.3655469 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Zhang, Wei;Zhang, Yue;Xue, JunShuai;Zhang, Ying;Lv, Ling;Zhang, JinCheng;Hao, Yue;
12:54:3:6 Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers
DOI:10.1063/1.3676266 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Huang, C. C.;Xu, F. J.;Song, J.;Xu, Z. Y.;Wang, J. M.;Zhu, R.;Chen, G.;Wang, X. Q.;Yang, Z. J.;Shen, B.;Chen, X. S.;Lu, W.;
12:54:3:7 Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures
DOI:10.1063/1.3656971 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Gong, Y. P.;Xing, K.;Wang, T.;
12:54:3:8 Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices
DOI:10.1063/1.3554752 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Hofstetter, Daniel;Di Francesco, J.;Kandaswamy, Prem K.;Monroy, Eva;
12:54:4:1 A bi-functional quantum cascade device for same-frequency lasing and detection
DOI:10.1063/1.4767128 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Schwarz, Benedikt;Reininger, Peter;Detz, Hermann;Zederbauer, Tobias;Andrews, Aaron Maxwell;Kalchmair, Stefan;Schrenk, Werner;Baumgartner, Oskar;Kosina, Hans;Strasser, Gottfried;
12:54:4:2 Photonic crystal slab quantum well infrared photodetector
DOI:10.1063/1.3537954 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Kalchmair, S.;Detz, H.;Cole, G. D.;Andrews, A. M.;Klang, P.;Nobile, M.;Gansch, R.;Ostermaier, C.;Schrenk, W.;Strasser, G.;
12:54:4:3 Photonic crystal slab quantum cascade detector
DOI:10.1063/1.4846035 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Reininger, Peter;Schwarz, Benedikt;Harrer, Andreas;Zederbauer, Tobias;Detz, Hermann;Andrews, Aaron Maxwell;Gansch, Roman;Schrenk, Werner;Strasser, Gottfried;
12:54:4:4 Diagonal-transition quantum cascade detector
DOI:10.1063/1.4894767 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Reininger, Peter;Schwarz, Benedikt;Detz, Hermann;MacFarland, Don;Zederbauer, Tobias;Andrews, Aaron Maxwell;Schrenk, Werner;Baumgartner, Oskar;Kosina, Hans;Strasser, Gottfried;
12:54:4:5 Plasmonic lens enhanced mid-infrared quantum cascade detector
DOI:10.1063/1.4901043 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Harrer, Andreas;Schwarz, Benedikt;Gansch, Roman;Reininger, Peter;Detz, Hermann;Zederbauer, Tobias;Andrews, Aaron Maxwell;Schrenk, Werner;Strasser, Gottfried;
12:54:4:6 Resonator-quantum well infrared photodetectors
DOI:10.1063/1.4831797 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Choi, K. K.;Jhabvala, M. D.;Sun, J.;Jhabvala, C. A.;Waczynski, A.;Olver, K.;
12:54:4:7 Electromagnetic modeling of edge coupled quantum well infrared photodetectors
DOI:10.1063/1.4729810 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Choi, K. K.;
12:55:1 Giant Piezoresistance Effects in Silicon Nanowires and Microwires
DOI:10.1103/PhysRevLett.105.226802 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:38 AU: Milne, J. S.;Rowe, A. C. H.;Arscott, S.;Renner, Ch.;
12:55:2 Electrically Controlled Giant Piezoresistance in Silicon Nanowires
DOI:10.1021/nl9037856 JN:NANO LETTERS PY:2010
TC:53 AU: Neuzil, Pavel;Wong, Chee Chung;Reboud, Julien;
12:55:3 Piezoresistance in silicon and its nanostructures
DOI:10.1557/jmr.2014.52 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:6 AU: Rowe, A. C. H.;
12:55:4 Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain
DOI:10.1021/nl303288g JN:NANO LETTERS PY:2012
TC:24 AU: Greil, J.;Lugstein, A.;Zeiner, C.;Strasser, G.;Bertagnolli, E.;
12:55:5 In Situ Electron Microscopy Four-Point Electromechanical Characterization of Freestanding Metallic and Semiconducting Nanowires
DOI:10.1002/smll.201300736 JN:SMALL PY:2014
TC:5 AU: Bernal, Rodrigo A.;Filleter, Tobin;Connell, Justin G.;Sohn, Kwonnam;Huang, Jiaxing;Lauhon, Lincoln J.;Espinosa, Horacio D.;
12:55:6 Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires
DOI:10.1021/nl102179c JN:NANO LETTERS PY:2010
TC:37 AU: Lugstein, A.;Steinmair, M.;Steiger, A.;Kosina, H.;Bertagnolli, E.;
12:55:7 Piezoresistance of top-down suspended Si nanowires
DOI:10.1088/0957-4484/22/39/395701 JN:NANOTECHNOLOGY PY:2011
TC:13 AU: Koumela, A.;Mercier, D.;Dupre, C.;Jourdan, G.;Marcoux, C.;Ollier, E.;Purcell, S. T.;Duraffourg, L.;
12:55:8 Observation of the Inverse Giant Piezoresistance Effect in Silicon Nanomembranes Probed by Ultrafast Terahertz Spectroscopy
DOI:10.1021/nl503186u JN:NANO LETTERS PY:2014
TC:0 AU: Jang, Houk;Kim, Jaeseok;Kim, Min-Seok;Cho, Jeong Ho;Choi, Hyunyong;Ahn, Jong-Hyun;
12:55:9 Piezoresistance of nano-scale silicon up to 2 GPa in tension
DOI:10.1063/1.4788919 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Bhaskar, Umesh Kumar;Pardoen, Thomas;Passi, Vikram;Raskin, Jean-Pierre;
12:55:10 Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires
DOI:10.1039/c3tc30655k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:12 AU: Bi, Jinghui;Wei, Guodong;Wang, Lin;Gao, Fengmei;Zheng, Jinju;Tang, Bin;Yang, Weiyou;
12:55:11 Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement
DOI:10.1088/0957-4484/22/1/015501 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Yang, Yongliang;Li, Xinxin;
12:55:12 Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires
DOI:10.1088/0957-4484/25/45/455705 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Wagesreither, Stefan;Bertagnolli, Emmerich;Kawase, Shinya;Isono, Yoshitada;Lugstein, Alois;
12:55:13 Flexible piezoresistive strain sensor based on single Sb-doped ZnO nanobelts
DOI:10.1063/1.3522885 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Yang, Ya;Guo, Wen;Qi, Junjie;Zhang, Yue;
12:55:14 Silicon nanowire piezoresistance: Impact of surface crystallographic orientation
DOI:10.1063/1.3463456 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Barwicz, Tymon;Klein, Levente;Koester, Steven J.;Hamann, Hendrik;
12:55:15 Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors
DOI:10.1063/1.4704564 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Kang, Ting-Kuo;
12:55:16 Piezoresistance behaviors of ultra-strained SiC nanowires
DOI:10.1063/1.4769217 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Shao, Ruiwen;Zheng, Kun;Zhang, Yuefei;Li, Yujie;Zhang, Ze;Han, Xiaodong;
12:55:17 Piezoresistive silicon nanowire based nanoelectromechanical system cantilever air flow sensor
DOI:10.1063/1.3675878 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Zhang, Songsong;Lou, Liang;Lee, Chengkuo;
12:55:18 Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors
DOI:10.1039/c4tc01810a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Bi, Jinghui;Wei, Guodong;Shang, Minghui;Gao, Fengmei;Tang, Bin;Yang, Weiyou;
12:55:19 The piezoresistive effect in n-type junctionless silicon nanowire transistors
DOI:10.1088/0957-4484/23/47/475203 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Kang, Ting-Kuo;
12:55:20 Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
DOI:10.1063/1.3683516 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Singh, Pushpapraj;Park, Woo-Tae;Miao, Jianmin;Shao, Lichun;Kotlanka, Rama Krishna;Kwong, Dim-Lee;
12:55:21 Nanowires enabling strained photovoltaics
DOI:10.1063/1.4871458 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Greil, J.;Birner, S.;Bertagnolli, E.;Lugstein, A.;
12:55:22 Large piezoresistance of single silicon nano-needles induced by non-uniaxial strain
DOI:10.1063/1.3662917 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Xiao, Zhiming;She, Juncong;Deng, Shaozhi;Xu, Ningsheng;
12:55:23 Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires
DOI:10.1021/nl5044743 JN:NANO LETTERS PY:2015
TC:3 AU: Winkler, Karl;Bertagnolli, Emmerich;Lugstein, Alois;
12:55:24 Mobility improvement in nanowire junctionless transistors by uniaxial strain
DOI:10.1063/1.3474608 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Raskin, Jean-Pierre;Colinge, Jean-Pierre;Ferain, Isabelle;Kranti, Abhinav;Lee, Chi-Woo;Akhavan, Nima Dehdashti;Yan, Ran;Razavi, Pedram;Yu, Ran;
12:55:25 Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer
DOI:10.1002/smll.201201599 JN:SMALL PY:2013
TC:5 AU: Yu, Xiao;Wang, Yuchen;Zhou, Hong;Liu, Yanxiang;Wang, Yi;Li, Tie;Wang, Yuelin;
12:55:26 Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa
DOI:10.1103/PhysRevLett.108.256801 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:4 AU: Milne, J. S.;Favorskiy, I.;Rowe, A. C. H.;Arscott, S.;Renner, Ch.;
12:55:27 Low-field mobility in ultrathin silicon nanowire junctionless transistors
DOI:10.1063/1.3669509 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Soree, Bart;Magnus, Wim;Vandenberghe, William;
12:56:1 Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides
DOI:10.1016/j.actbio.2011.09.038 JN:ACTA BIOMATERIALIA PY:2012
TC:31 AU: Jewett, Scott A.;Makowski, Matthew S.;Andrews, Benjamin;Manfra, Michael J.;Ivanisevic, Albena;
12:56:2 Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution
DOI:10.1021/la5040245 JN:LANGMUIR PY:2014
TC:3 AU: Berg, Nora G.;Nolan, Michael W.;Paskova, Tania;Ivanisevic, Albena;
12:56:3 Aqueous Stability of Ga- and N-Polar Gallium Nitride
DOI:10.1021/la304039n JN:LANGMUIR PY:2013
TC:17 AU: Foster, Corey M.;Collazo, Ramon;Sitar, Zlatko;Ivanisevic, Albena;
12:56:4 Direct Grafting of Long-Lived Luminescent Indicator Dyes to GaN Light-Emitting Diodes for Chemical Microsensor Development
DOI:10.1021/am2010509 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:14 AU: Lopez-Gejo, Juan;Navarro-Tobar, Alvaro;Arranz, Antonio;Palacio, Carlos;Munoz, Elias;Orellana, Guillermo;
12:56:5 Dye-Sensitized Photocathodes: Efficient Light-Stimulated Hole Injection into p-GaP Under Depletion Conditions
DOI:10.1021/ja304019n JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:10 AU: Chitambar, Michelle;Wang, Zhijie;Liu, Yiming;Rockett, Angus;Maldonado, Stephen;
12:56:6 Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors
DOI:10.1016/j.actbio.2014.02.038 JN:ACTA BIOMATERIALIA PY:2014
TC:5 AU: Bain, Lauren E.;Collazo, Ramon;Hsu, Shu-han;Latham, Nicole Pfiester;Manfra, Michael J.;Ivanisevic, Albena;
12:56:7 On the hydrophobicity of modified Ga-polar GaN surfaces
DOI:10.1063/1.4790435 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Dziecielewski, I.;Weyher, J. L.;Dzwolak, W.;
12:56:8 AlGaN/GaN field effect transistors functionalized with recognition peptides
DOI:10.1063/1.4896962 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Rohrbaugh, N.;Bryan, I.;Bryan, Z.;Arellano, C.;Collazo, R.;Ivanisevic, A.;
12:56:9 Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions
DOI:10.1016/j.apsusc.2012.08.115 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Jewett, Scott A.;Yoder, Jeffrey A.;Ivanisevic, Albena;
12:56:10 In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching
DOI:10.1021/la404511b JN:LANGMUIR PY:2014
TC:9 AU: Wilkins, Stewart J.;Greenough, Michelle;Arellano, Consuelo;Paskova, Tania;Ivanisevic, Albena;
12:56:11 Wet Chemical Functionalization of III-V Semiconductor Surfaces: Alkylation of Gallium Arsenide and Gallium Nitride by a Grignard Reaction Sequence
DOI:10.1021/la204698a JN:LANGMUIR PY:2012
TC:14 AU: Peczonczyk, Sabrina L.;Mukherjee, Jhindan;Carim, Azhar I.;Maldonado, Stephen;
12:56:12 Formation of amine groups on the surface of GaN: A method for direct biofunctionalization
DOI:10.1016/j.apsusc.2010.01.120 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Stine, R.;Simpkins, B. S.;Mulvaney, S. P.;Whitman, L. J.;Tamanaha, C. R.;
12:56:13 Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates
DOI:10.1002/adma.200903756 JN:ADVANCED MATERIALS PY:2010
TC:14 AU: Howgate, John;Schoell, Sebastian J.;Hoeb, Marco;Steins, Wiebke;Baur, Barbara;Hertrich, Samira;Nickel, Bert;Sharp, Ian D.;Stutzmann, Martin;Eickhoff, Martin;
12:56:14 Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1-xN Surfaces
DOI:10.1021/am4015555 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:3 AU: Bain, Lauren E.;Jewett, Scott A.;Mukund, Aadhithya Hosalli;Bedair, Salah M.;Paskova, Tania M.;Ivanisevic, Albena;
12:56:15 Olefin metathesis reaction on GaN (0001) surfaces
DOI:10.1016/j.apsusc.2010.12.100 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Makowski, Matthew S.;Zemlyanov, Dmitry Y.;Ivanisevic, Albena;
12:56:16 Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation
DOI:10.1063/1.4817899 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Wilkins, S. J.;Paskova, T.;Ivanisevic, A.;
12:56:17 GaN Nanowire Functionalized with Atomic Layer Deposition Techniques for Enhanced Immobilization of Biomolecules
DOI:10.1021/la103337a JN:LANGMUIR PY:2010
TC:13 AU: Guo, D. J.;Abdulagatov, A. I.;Rourke, D. M.;Bertness, K. A.;George, S. M.;Lee, Y. C.;Tan, W.;
12:56:18 Loss of Siloxane Monolayers from GaN Surfaces in Water
DOI:10.1021/la400849j JN:LANGMUIR PY:2013
TC:9 AU: Arisio, Christina;Cassou, Catherine A.;Lieberman, Marya;
12:56:19 Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment versus Covalent Functionalization
DOI:10.1021/la401503b JN:LANGMUIR PY:2013
TC:10 AU: Foster, Corey M.;Collazo, Ramon;Sitar, Zlatko;Ivanisevic, Albena;
12:56:20 Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid
DOI:10.1016/j.apsusc.2014.01.035 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Wilkins, Stewart J.;Paskova, Tania;Ivanisevic, Albena;
12:56:21 Microsensors Based on GaN Semiconductors Covalently Functionalized with Luminescent Ru(II) Complexes
DOI:10.1021/ja908848c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:13 AU: Lopez-Gejo, Juan;Arranz, Antonio;Navarro, Alvaro;Palacio, Carlos;Munoz, Elias;Orellana, Guillermo;
12:56:22 Optical properties of functionalized GaN nanowires
DOI:10.1063/1.3552919 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Hsu, Chih-Wei;Ganguly, Abhijit;Chen, Chin-Pei;Kuo, Chun-Chiang;Paskov, Plamen P.;Holtz, Per Olof;Chen, Li-Chyong;Chen, Kuei-Hsien;
12:56:23 Secondary Functionalization of Allyl-Terminated GaP(111)A Surfaces via Heck Cross-Coupling Metathesis, Hydrosilylation, and Electrophilic Addition of Bromine
DOI:10.1021/la403558k JN:LANGMUIR PY:2014
TC:3 AU: Peczonczyk, Sabrina L.;Brown, Elizabeth S.;Maldonado, Stephen;
12:56:24 Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction
DOI:10.1016/j.jcrysgro.2011.01.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Kim, Hong-Yeol;Jung, Younghun;Kim, Sung Hyun;Ahn, Jaehui;Mastro, Michael A.;Hite, Jennifer K.;Eddy, Charles R., Jr.;Kim, Jihyun;
12:56:25 Wet Chemical Functionalization of III-V Semiconductor Surfaces: Alkylation of Gallium Phosphide Using a Grignard Reaction Sequence
DOI:10.1021/la100783w JN:LANGMUIR PY:2010
TC:13 AU: Mukherjee, Jhindan;Peczonczyk, Sabrina;Maldonado, Stephen;
12:56:26 Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)
DOI:10.1021/la904451x JN:LANGMUIR PY:2010
TC:16 AU: Richards, David;Zemlyanov, Dmitry;Ivanisevic, Albena;
12:56:27 Site-Selective Biofunctionalization of Aluminum Nitride Surfaces Using Patterned Organosilane Self-Assembled Monolayers
DOI:10.1021/la9029968 JN:LANGMUIR PY:2010
TC:7 AU: Chiu, Chi-Shun;Lee, Hong-Mao;Gwo, Shangjr;
12:56:28 High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models
DOI:10.1002/adfm.201400388 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:0 AU: Frenkel, Nataliya;Wallys, Jens;Lippert, Sara;Teubert, Joerg;Kaufmann, Stefan;Das, Aparna;Monroy, Eva;Eickhoff, Martin;Tanaka, Motomu;
12:56:29 Investigation of etch characteristics of non-polar GaN by wet chemical etching
DOI:10.1016/j.apsusc.2010.08.017 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Hsu, Hsiao-Chiu;Su, Yan-Kuin;Cheng, Shin-Hao;Huang, Shyh-Jer;Cao, Jia-Ming;Chen, Kuan-Chun;
12:56:30 Relationship between the Microscopic and Macroscopic World in Optical Oxygen Sensing: A Luminescence Lifetime Microscopy Study
DOI:10.1021/la902546k JN:LANGMUIR PY:2010
TC:13 AU: Lopez-Gejo, Juan;Haigh, David;Orellana, Guillermo;
12:56:31 Surface functionalization of mesoporous antimony doped tin oxide by metalorganic reaction
DOI:10.1016/j.matchemphys.2012.09.008 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:0 AU: Mueller, Vesna;Haase, Frederik;Rathousky, Jiri;Fattakhova-Rohlfing, Dina;
12:56:32 Microalgae dual-head biosensors for selective detection of herbicides with fiber-optic luminescent O-2 transduction
DOI:10.1016/j.bios.2013.10.062 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:1 AU: Haigh-Florez, David;de la Hera, Cristina;Costas, Eduardo;Orellana, Guillermo;
12:56:33 Native Gallium Adatoms Discovered on Atomically-Smooth Gallium Nitride Surfaces at Low Temperature
DOI:10.1021/nl5049252 JN:NANO LETTERS PY:2015
TC:0 AU: Alam, Khan;Foley, Andrew;Smith, Arthur R.;
12:57:1 High Si and Ge n-type doping of GaN doping - Limits and impact on stress
DOI:10.1063/1.3695172 JN:APPLIED PHYSICS LETTERS PY:2012
TC:18 AU: Fritze, S.;Dadgar, A.;Witte, H.;Buegler, M.;Rohrbeck, A.;Blaesing, J.;Hoffmann, A.;Krost, A.;
12:57:2 Strain in Si doped GaN and the Fermi level effect
DOI:10.1063/1.3589978 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Xie, Jinqiao;Mita, Seiji;Rice, Anthony;Tweedie, James;Hussey, Lindsay;Collazo, Ramon;Sitar, Zlatko;
12:57:3 The effects of Si doping on dislocation movement and tensile stress in GaN films
DOI:10.1063/1.3553841 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Moram, M. A.;Kappers, M. J.;Massabuau, F.;Oliver, R. A.;Humphreys, C. J.;
12:57:4 Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10(20) cm(-3)
DOI:10.1103/PhysRevB.90.075203 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Feneberg, Martin;Osterburg, Sarah;Lange, Karsten;Lidig, Christian;Garke, Bernd;Goldhahn, Ruediger;Richter, Eberhard;Netzel, Carsten;Neumann, Maciej D.;Esser, Norbert;Fritze, Stephanie;Witte, Hartmut;Blaesing, Juergen;Dadgar, Armin;Krost, Alois;
12:57:5 Dislocation movement in GaN films
DOI:10.1063/1.3532965 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Moram, M. A.;Sadler, T. C.;Haeberlen, M.;Kappers, M. J.;Humphreys, C. J.;
12:57:6 Strain and defects in Si-doped (Al)GaN epitaxial layers
DOI:10.1063/1.4761815 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Forghani, Kamran;Schade, Lukas;Schwarz, Ulrich T.;Lipski, Frank;Klein, Oliver;Kaiser, Ute;Scholz, Ferdinand;
12:57:7 Ge doped GaN with controllable high carrier concentration for plasmonic applications
DOI:10.1063/1.4848555 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Kirste, Ronny;Hoffmann, Marc P.;Sachet, Edward;Bobea, Milena;Bryan, Zachary;Bryan, Isaac;Nenstiel, Christian;Hoffmann, Axel;Maria, Jon-Paul;Collazo, Ramon;Sitar, Zlatko;
12:57:8 Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10(20) cm(-3)
DOI:10.1063/1.4812666 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Wieneke, Matthias;Witte, Hartmut;Lange, Karsten;Feneberg, Martin;Dadgar, Armin;Blaesing, Juergen;Goldhahn, Ruediger;Krost, Alois;
12:57:9 TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers
DOI:10.1016/j.jcrysgro.2011.03.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Klein, O.;Biskupek, J.;Forghani, K.;Scholz, F.;Kaiser, U.;
12:57:10 Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
DOI:10.1103/PhysRevLett.110.036103 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:9 AU: Markurt, T.;Lymperakis, L.;Neugebauer, J.;Drechsel, P.;Stauss, P.;Schulz, T.;Remmele, T.;Grillo, V.;Rotunno, E.;Albrecht, M.;
12:57:11 High quality AlGaN epilayers grown on sapphire using SiNx interlayers
DOI:10.1016/j.jcrysgro.2010.08.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:19 AU: Forghani, K.;Klein, M.;Lipski, F.;Schwaiger, S.;Hertkorn, J.;Leute, R. A. R.;Scholz, F.;Feneberg, M.;Neuschl, B.;Thonke, K.;Klein, O.;Kaiser, U.;Gutt, R.;Passow, T.;
12:57:12 Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures
DOI:10.1016/j.jcrysgro.2014.04.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Wang, Tzu-Yu;Ou, Sin-Liang;Horng, Ray-Hua;Wuu, Dong-Sing;
12:57:13 Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers
DOI:10.1016/j.jcrysgro.2013.10.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Zheng, Zhiyuan;Chen, Zimin;Wu, Hualong;Chen, Yingda;Huang, Shanjin;Fan, Bingfeng;Xian, Yulun;Wu, Zhisheng;Wang, Gang;Jiang, Hao;
12:57:14 Analysis of doping induced wafer bow during GaN:Si growth on sapphire
DOI:10.1063/1.4739278 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Brunner, F.;Mogilatenko, A.;Knauer, A.;Weyers, M.;Zettler, J. -T.;
12:57:15 On the strain in n-type GaN
DOI:10.1063/1.3647772 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Xie, Jinqiao;Mita, Seiji;Hussey, Lindsay;Rice, Anthony;Tweedie, James;LeBeau, James;Collazo, Ramon;Sitar, Zlatko;
12:57:16 Anisotropy of effective electron masses in highly doped nonpolar GaN
DOI:10.1063/1.4840055 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Feneberg, Martin;Lange, Karsten;Lidig, Christian;Wieneke, Matthias;Witte, Hartmut;Blaesing, Juergen;Dadgar, Armin;Krost, Alois;Goldhahn, Ruediger;
12:57:17 Stress evolution during AlxGa1-xN/AlN growth on sapphire
DOI:10.1016/j.jcrysgro.2013.04.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Brunner, F.;Mogilatenko, A.;Kueller, V.;Knauer, A.;Weyers, M.;
12:57:18 High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure
DOI:10.1016/j.jcrysgro.2012.07.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Lazarev, S.;Bauer, S.;Forghani, K.;Barchuk, M.;Scholz, F.;Baumbach, T.;
12:57:19 Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
DOI:10.1016/j.jcrysgro.2013.11.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Xiang, Peng;Yang, Yibin;Liu, Minggang;Chen, Weijie;Han, Xiaobiao;Lin, Yan;Hu, Gangwei;Hu, Guoheng;Luo, Hui;Jiang, Jianliang;Lin, Jiali;Wu, Zhisheng;Liu, Yang;Zhang, Baijun;
12:57:20 Defects and dislocations in MgO: atomic scale models of impurity segregation and fast pipe diffusion
DOI:10.1039/c0jm01550d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:16 AU: Zhang, Feiwu;Walker, Andrew M.;Wright, Kate;Gale, Julian D.;
12:57:21 Comment on "The effects of Si doping on dislocation movement and tensile stress in GaN films" [J. Appl. Phys. 109, 073509 (2011)]
DOI:10.1063/1.3656430 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Dadgar, A.;Krost, A.;
12:57:22 Si Doping of GaN in Hydride Vapor-Phase Epitaxy
DOI:10.1007/s11664-012-2373-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:4 AU: Richter, E.;Stoica, T.;Zeimer, U.;Netzel, C.;Weyers, M.;Traenkle, G.;
12:57:23 Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
DOI:10.1063/1.3515865 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Neuschl, B.;Fujan, K. J.;Feneberg, M.;Tischer, I.;Thonke, K.;Forghani, K.;Klein, M.;Scholz, F.;
12:57:24 Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers
DOI:10.1063/1.4720395 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Zheng, Zhiyuan;Chen, Zimin;Chen, Yingda;Huang, Shanjin;Fan, Bingfeng;Xian, Yulun;Jia, Weiqing;Wu, Zhisheng;Wang, Gang;Jiang, Hao;
12:57:25 Response to "Comment on 'The effects of Si doping on dislocation movement and tensile stress in GaN films'" [J. Appl. Phys. 109, 073509 (2011)]
DOI:10.1063/1.3656431 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Moram, M. A.;Kappers, M. J.;Massabuau, F.;Oliver, R. A.;Humphreys, C. J.;
12:57:26 Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method
DOI:10.1063/1.4862804 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, Yang;Chen, Shengchang;Kong, Man;Li, Senlin;Tian, Wu;Sun, Shichuang;Wu, Zhihao;Fang, Yanyan;Dai, Jiangnan;Chen, Changqing;
12:57:27 Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition
DOI:10.1016/j.mssp.2014.08.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Tao, Pengcheng;Liang, Hongwei;Wang, Dongsheng;Xia, Xiaochuan;Feng, Qiuju;Liu, Yang;Shen, Rensheng;Zhang, Kexiong;Luo, Yingmin;Guo, Wenping;Deng, Qunxiong;Du, Guotong;
12:57:28 Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers
DOI:10.1063/1.3637599 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Zheng, Zhiyuan;Chen, Zimin;Xian, Yulun;Fan, Bingfeng;Huang, Shanjin;Jia, Weiqing;Wu, Zhisheng;Wang, Gang;Jiang, Hao;
12:57:29 Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.09.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Oshima, Yuichi;Yoshida, Takehiro;Watanabe, Kazutoshi;Mishima, Tomoyoshi;
12:57:30 Rehybridization-induced defect-level of open-core edge dislocation in GaN
DOI:10.1016/j.scriptamat.2013.06.021 JN:SCRIPTA MATERIALIA PY:2013
TC:0 AU: Yang, Mino;Kim, Jongseob;Lee, Jaewoo;Yang, Cheol-Woong;
12:57:31 Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)
DOI:10.1016/j.apsusc.2013.02.094 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Svitasheva, S. N.;Gilinsky, A. M.;
12:57:32 Surface characterization of AlGaN grown on Si (111) substrates
DOI:10.1016/j.jcrysgro.2011.07.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Pan, Xu;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Feng, Chun;Jiang, Lijuan;Yin, Haibo;Chen, Hong;
12:57:33 Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates
DOI:10.1016/j.jcrysgro.2014.10.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:2 AU: Wosko, Mateusz;Paszkiewicz, Bogdan;Szymanski, Tomasz;Paszkiewicz, Regina;
12:58:1:1 Review of radiation damage in GaN-based materials and devices
DOI:10.1116/1.4799504 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:31 AU: Pearton, Stephen J.;Deist, Richard;Ren, Fan;Liu, Lu;Polyakov, Alexander Y.;Kim, Jihyun;
12:58:1:2 Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors
DOI:10.1116/1.48916291 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Anderson, Travis;Koehler, Andrew;Hwang, Ya-Hsi;Hsieh, Yueh-Ling;Li, Shun;Ren, Fan;Johnson, Jerry Wayne;Pearton, Stephen J.;
12:58:1:3 Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors
DOI:10.1116/1.3644480 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:10 AU: Lo, C. F.;Liu, L.;Ren, F.;Kim, H. -Y.;Kim, J.;Pearton, S. J.;Laboutin, O.;Cao, Yu;Johnson, J. W.;Kravchenko, I. I.;
12:58:1:4 Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3581078 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:15 AU: Liu, Lu;Kang, Tsung Sheng;Cullen, David A.;Zhou, Lin;Kim, Jinhyung;Chang, Chih-Yang;Douglas, Erica A.;Jang, Soohwan;Smith, David. J.;Pearton, S. J.;Johnson, Wayne J.;Ren, Fan;
12:58:1:5 Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4836577 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Xi, Yuyin;Hsieh, Yueh-Ling;Hwang, Ya-Hsi;Li, Shun;Ren, Fan;Pearton, Stephen J.;Patrick, Erin;Law, Mark E.;Yang, Gwangseok;Kim, Hong-Yeol;Kim, Jihyun;Baca, Albert G.;Allerman, Andrew A.;Sanchez, Carlos A.;
12:58:1:6 Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
DOI:10.1116/1.4729285 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:4 AU: Lo, Chien-Fong;Liu, Lu;Ren, Fan;Pearton, Stephen J.;Gila, Brent P.;Kim, Hong-Yeol;Kim, Jihyun;Laboutin, Oleg;Cao, Yu;Johnson, Jerry W.;Kravchenko, Ivan I.;
12:58:1:7 Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4813785 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:12 AU: Liu, Lu;Cuervo, Camilo Velez;Xi, Yuyin;Ren, Fan;Pearton, Stephen J.;Kim, Hong-Yeol;Kim, Jihyun;Kravchenko, Ivan I.;
12:58:1:8 Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4792370 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Douglas, Erica A.;Bielejec, Edward;Frenzer, Patrick;Yates, Bradley R.;Pearton, Stephen J.;Lo, Chien-Fong;Liu, Lu;Kang, Tsung-Sheng;Ren, Fan;
12:58:1:9 Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4788904 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:15 AU: Liu, Lu;Lo, Chien-Fong;Xi, Yuyin;Wang, Yuxi;Ren, Fan;Pearton, Stephen J.;Kim, Hong-Yeol;Kim, Jihyun;Fitch, Robert C.;Walker, Dennis E., Jr.;Chabak, Kelson D.;Gillespie, James K.;Tetlak, Stephen E.;Via, Glen D.;Crespo, Antonio;Kravchenko, Ivan I.;
12:58:1:10 Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies
DOI:10.1063/1.3673906 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kim, H. -Y.;Lo, C. F.;Liu, L.;Ren, F.;Kim, J.;Pearton, S. J.;
12:58:1:11 Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3676034 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:11 AU: Kim, Hong-Yeol;Kim, Jihyun;Liu, Lu;Lo, Chien-Fong;Ren, Fan;Pearton, Stephen J.;
12:58:1:12 Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability
DOI:10.1116/1.4773060 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:8 AU: Liu, Lu;Lo, Chien-Fong;Xi, Yuyin;Ren, Fan;Pearton, Stephen J.;Laboutin, Oleg;Cao, Yu;Johnson, J. Wayne;Kravchenko, Ivan I.;
12:58:1:13 Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons
DOI:10.1016/j.jcrysgro.2011.01.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Kim, Hong-Yeol;Anderson, Travis;Mastro, Michael A.;Freitas, Jaime A., Jr.;Jang, Soohwan;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Jihyun;
12:58:1:14 Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage
DOI:10.1063/1.4866858 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hwang, Ya-Hsi;Li, Shun;Hsieh, Yueh-Ling;Ren, Fan;Pearton, Stephen J.;Patrick, Erin;Law, Mark E.;Smith, David J.;
12:58:1:15 Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate
DOI:10.1116/1.4866401 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Liu, Lu;Hwang, Ya-Hsi;Xi, Yuyin;Ren, Fan;Craciun, Valentin;Pearton, Stephen J.;Yang, Gwangseok;Kim, Hong-Yeol;Kim, Jihyun;
12:58:1:16 Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4792240 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Schwarz, C.;Yadav, A.;Shatkhin, M.;Flitsiyan, E.;Chernyak, L.;Kasiyan, V.;Liu, L.;Xi, Y. Y.;Ren, F.;Pearton, S. J.;Lo, C. F.;Johnson, J. W.;Danilova, E.;
12:58:1:17 InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
DOI:10.1116/1.3481138 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:5 AU: Wu, M.;Leach, J. H.;Ni, X.;Li, X.;Xie, J.;Dogan, S.;Ozgur, U.;Morkoc, H.;Paskova, T.;Preble, E.;Evans, K. R.;Lu, Chang-Zhi;
12:58:1:18 Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
DOI:10.1116/1.3698402 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:4 AU: Lo, Chien-Fong;Liu, L.;Kang, T. S.;Ren, Fan;Schwarz, C.;Flitsiyan, E.;Chernyak, L.;Kim, Hong-Yeol;Kim, Jihyun;Yun, Sang Pil;Laboutin, O.;Cao, Y.;Johnson, J. W.;Pearton, S. J.;
12:58:1:19 Electrical characterization of Co-60 gamma radiation-exposed InAlN/GaN high electron mobility transistors
DOI:10.1116/1.4820129 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Kim, Hong-Yeol;Kim, Jihyun;Liu, Lu;Lo, Chien-Fong;Ren, Fan;Pearton, Stephen J.;
12:58:1:20 Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation
DOI:10.1116/1.4864070 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:3 AU: Li, Shun;Hwang, Ya-Hsi;Hsieh, Yueh-Ling;Lei, Lei;Ren, Fan;Pearton, Stephen J.;Patrick, Erin;Law, Mark E.;Cuervo, Camilo Velez;Smith, David. J.;
12:58:1:21 Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3607601 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Liu, Lu;Lo, Chien-Fong;Kang, Tsung-Sheng;Ren, Fan;Pearton, S. J.;Kravchenko, I. I.;Laboutin, O.;Cao, Yu;Johnson, Wayne J.;
12:58:1:22 Degradation of GaN LEDs by electron irradiation
DOI:10.1016/j.mseb.2010.03.018 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Ohyama, H.;Takakura, K.;Hanada, M.;Nagano, T.;Yoshino, K.;Nakashima, T.;Kuboyama, S.;Simoen, E.;Claeys, C.;
12:58:2:1 Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
DOI:10.1063/1.3533381 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Lo, C. F.;Kang, T. S.;Liu, L.;Chang, C. Y.;Pearton, S. J.;Kravchenko, I. I.;Laboutin, O.;Johnson, J. W.;Ren, F.;
12:58:2:2 Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
DOI:10.1116/1.3593002 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:11 AU: Lo, Chien-Fong;Kang, T. S.;Liu, L.;Ren, F.;Pearton, S. J.;Kim, Jinhyung;Jang, S.;Laboutin, O.;Cao, Y.;Johnson, J. W.;
12:58:2:3 SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors
DOI:10.1116/1.4736974 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Hung, Shao-Tsu;Chang, Chi-Jung;Chen, Chin Ching;Lo, Chien Fong;Ren, Fan;Pearton, Stephen J.;Kravchenko, Ivan I.;
12:58:2:4 Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
DOI:10.1116/1.3672010 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:3 AU: Lo, Chien-Fong;Liu, Lu;Chu, Byung-Hwan;Ren, Fan;Pearton, Stephen J.;Dore, Sylvain;Hsu, Chien-Hsing;Kim, Jihyun;Dabiran, Amir M.;Chow, Peter P.;
12:58:2:5 Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3647561 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Lo, Chien-Fong;Chu, B. H.;Pearton, S. J.;Dabiran, A.;Chow, P. P.;Dore, S.;Hung, S. C.;Chen, C. W.;Ren, F.;
12:58:2:6 High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature
DOI:10.1063/1.3596440 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Hung, S. C.;Chen, C. W.;Shieh, C. Y.;Chi, G. C.;Fan, R.;Pearton, S. J.;
12:58:2:7 Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes
DOI:10.1116/1.4803743 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Xi, Yuyin;Liu, Lu;Ren, Fan;Pearton, Stephen J.;Kim, Jihyun;Dabiran, Amir;Chow, Peter P.;
12:58:2:8 Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3368467 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Wang, Yu-Lin;Chang, C. Y.;Lim, Wantae;Pearton, S. J.;Norton, D. P.;Chu, B. H.;Lo, C. F.;Ren, F.;Johnson, J. W.;Rajagopal, P.;Roberts, J. C.;Piner, E. L.;Linthicum, K. J.;
12:58:3:1 Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors
DOI:10.1063/1.3275241 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Zhou, Lin;Leach, Jacob H.;Ni, Xianfeng;Morkoccedil, Hadis;Smith, David J.;
12:58:3:2 TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures
DOI:10.1063/1.3501106 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Zhou, Lin;Chang, C. Y.;Pearton, S. J.;Ren, F.;Dabiran, Amir;Smith, David. J.;
12:58:3:3 Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices
DOI:10.1116/1.4829878 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Zhou, Lin;Johnson, Michael R.;Smith, David J.;Meyer, David J.;Storm, David F.;Katzer, Douglas Scott;Downey, Brian P.;
12:58:4:1 Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates
DOI:10.1016/j.jcrysgro.2011.01.098 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Kim, Byung-Jae;Kim, Hong-Yeol;Kim, Jihyun;Jang, Soohwan;
12:58:4:2 Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
DOI:10.1116/1.3268136 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Kim, Hong-Yeol;Kim, Jihyun;Ren, F.;Jang, Soohwan;
12:58:4:3 Passivation of AlN/GaN high electron mobility transistor using ozone treatment
DOI:10.1116/1.3271333 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Lo, C. F.;Chang, C. Y.;Pearton, S. J.;Kravchenko, I. I.;Dabiran, A. M.;Wowchak, A. M.;Cui, B.;Chow, P. P.;Ren, F.;
12:58:4:4 Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes
DOI:10.1016/j.tsf.2014.05.007 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Akkaya, A.;Karaaslan, T.;Dede, M.;Cetin, H.;Ayyildiz, E.;
12:59:1 A InGaN/GaN quantum dot green (lambda=524 nm) laser
DOI:10.1063/1.3596436 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Zhang, Meng;Banerjee, Animesh;Lee, Chi-Sen;Hinckley, John M.;Bhattacharya, Pallab;
12:59:2 InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
DOI:10.1063/1.3460921 JN:APPLIED PHYSICS LETTERS PY:2010
TC:40 AU: Zhang, Meng;Bhattacharya, Pallab;Guo, Wei;
12:59:3 Theory of reduced built-in polarization field in nitride-based quantum dots
DOI:10.1103/PhysRevB.82.033411 JN:PHYSICAL REVIEW B PY:2010
TC:29 AU: Schulz, S.;O'Reilly, E. P.;
12:59:4 Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
DOI:10.1103/PhysRevB.84.125312 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Schulz, S.;Caro, M. A.;O'Reilly, E. P.;Marquardt, O.;
12:59:5 Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions
DOI:10.1063/1.3374882 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Zhang, Meng;Bhattacharya, Pallab;Guo, Wei;Banerjee, Animesh;
12:59:6 Built-in field control in alloyed c-plane III-N quantum dots and wells
DOI:10.1063/1.3563568 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Caro, M. A.;Schulz, S.;Healy, S. B.;O'Reilly, E. P.;
12:59:7 Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (lambda=420 nm) on c-plane GaN substrate
DOI:10.1063/1.4738499 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Banerjee, Animesh;Frost, Thomas;Stark, Ethan;Bhattacharya, Pallab;
12:59:8 Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes
DOI:10.1063/1.3527935 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Bhattacharya, Pallab;Zhang, Meng;Hinckley, John;
12:59:9 Built-in field reduction in InGaN/GaN quantum dot molecules
DOI:10.1063/1.3665069 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Schulz, S.;O'Reilly, E. P.;
12:59:10 High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
DOI:10.1063/1.3656970 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Farrell, R. M.;Haeger, D. A.;Hsu, P. S.;Schmidt, M. C.;Fujito, K.;Feezell, D. F.;DenBaars, S. P.;Speck, J. S.;Nakamura, S.;
12:59:11 Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (lambda=630 nm) quantum dots
DOI:10.1063/1.4867244 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Frost, Thomas;Banerjee, Animesh;Jahangir, Shafat;Bhattacharya, Pallab;
12:59:12 InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.158 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Banerjee, Animesh;Frost, Thomas;Jahangir, Shafat;Stark, Ethan;Bhattacharya, Pallab;
12:59:13 Small-signal modulation and differential gain of red-emitting (lambda=630 nm) InGaN/GaN quantum dot lasers
DOI:10.1063/1.4832332 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Frost, Thomas;Banerjee, Animesh;Bhattacharya, Pallab;
12:59:14 Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots
DOI:10.1063/1.4752108 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Schulz, S.;Caro, M. A.;O'Reilly, E. P.;
12:59:15 High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (lambda=495 nm)
DOI:10.1016/j.jcrysgro.2010.12.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Zhang, Meng;Banerjee, Animesh;Bhattacharya, Pallab;
12:59:16 Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot
DOI:10.1063/1.4897640 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Deshpande, Saniya;Frost, Thomas;Hazari, Arnab;Bhattacharya, Pallab;
12:59:17 Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
DOI:10.1063/1.4896304 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jahangir, Shafat;Pietzonka, Ines;Strassburg, Martin;Bhattacharya, Pallab;
12:59:18 Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
DOI:10.1063/1.4864478 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kozlowski, Grzegorz;Schulz, Stefan;Corbett, Brian;
12:59:19 A generalized plane-wave formulation of k . p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
DOI:10.1016/j.commatsci.2014.06.047 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:3 AU: Marquardt, Oliver;Boeck, Sixten;Freysoldt, Christoph;Hickel, Tilmann;Schulz, Stefan;Neugebauer, Joerg;O'Reilly, Eoin P.;
12:59:20 Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
DOI:10.1063/1.4754533 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Ma, Jun;Ji, Xiaoli;Wang, Guohong;Wei, Xuecheng;Lu, Hongxi;Yi, Xiaoyan;Duan, Ruifei;Wang, Junxi;Zeng, Yiping;Li, Jinmin;Yang, Fuhua;Wang, Chao;Zou, Gang;
12:59:21 Characteristics of built-in polarization potentials in vertically and laterally arranged InGaN/GaN quantum dots
DOI:10.1063/1.4770301 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Park, Seoung-Hwan;Hong, Woo-Pyo;Kim, Jong-Jae;
12:59:22 Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots
DOI:10.1063/1.4820935 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Li, Z. C.;Liu, J. P.;Feng, M. X.;Zhou, K.;Zhang, S. M.;Wang, H.;Li, D. Y.;Zhang, L. Q.;Sun, Q.;Jiang, D. S.;Wang, H. B.;Yang, H.;
12:59:23 Suppressing the lateral growth of gallium nitride nanowires by introducing hydrogen plasma
DOI:10.1016/j.tsf.2012.03.052 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Wu, Tung-Hsien;Hong, Franklin Chau-Nan;
12:59:24 Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
DOI:10.1063/1.3456392 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Davies, S. C.;Mowbray, D. J.;Ranalli, F.;Wang, T.;
12:59:25 Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings
DOI:10.1063/1.3504230 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: McDonald, P. G.;Shumway, J.;Galbraith, I.;
12:59:26 Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells
DOI:10.1063/1.4818752 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Marquardt, Oliver;Hickel, Tilmann;Neugebauer, Joerg;Van de Walle, Chris G.;
12:59:27 Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
DOI:10.1063/1.3499618 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Soh, C. B.;Liu, W.;Chua, S. J.;Ang, S. S.;Tan, Rayson J. N.;Chow, S. Y.;
12:59:28 Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots
DOI:10.1021/nl502151k JN:NANO LETTERS PY:2014
TC:4 AU: Xiao, Xiaoyin;Fischer, Arthur J.;Wang, George T.;Lu, Ping;Koleske, Daniel D.;Coltrin, Michael E.;Wright, Jeremy B.;Liu, Sheng;Brener, Igal;Subramania, Ganapathi S.;Tsao, Jeffrey Y.;
12:59:29 Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template
DOI:10.1016/j.tsf.2012.06.031 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Chen, Wei-Chun;Kuo, Shou-Yi;Lai, Fang-I;Lin, Woei-Tyng;Hsiao, Chien-Nan;
12:59:30 Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots
DOI:10.1063/1.4751434 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: ElAfandy, Rami T.;Ng, Tien Khee;Cha, Dongkyu;Zhang, Meng;Bhattacharya, Pallab;Ooi, Boon S.;
12:60:1 Plasma-Assisted Approaches in Inorganic Nanostructure Fabrication
DOI:10.1002/adma.200903147 JN:ADVANCED MATERIALS PY:2010
TC:78 AU: Zheng, Jie;Yang, Rong;Xie, Lei;Qu, Jianglan;Liu, Yang;Li, Xingguo;
12:60:2 Emerging Stem Cell Controls: Nanomaterials and Plasma Effects
DOI:10.1155/2013/329139 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Borghi, F. F.;Rider, A. E.;Kumar, S.;Han, Z. J.;Haylock, D.;Ostrikov, K.;
12:60:3 Low-temperature plasmas in carbon nanostructure synthesis
DOI:10.1116/1.4821635 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:10 AU: Levchenko, Igor;Keidar, Michael;Xu, Shuyan;Kersten, Holger;Ostrikov, Kostya (Ken);
12:60:4 Highly Efficient Silicon Nanoarray Solar Cells by a Single-Step Plasma-Based Process
DOI:10.1002/aenm.201100085 JN:ADVANCED ENERGY MATERIALS PY:2011
TC:24 AU: Xu, S.;Huang, S. Y.;Levchenko, I.;Zhou, H. P.;Wei, D. Y.;Xiao, S. Q.;Xu, L. X.;Yan, W. S.;Ostrikov, K.;
12:60:5 Minimizing the Gibbs-Thomson effect in the low-temperature plasma synthesis of thin Si nanowires
DOI:10.1088/0957-4484/22/31/315707 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Mehdipour, H.;Ostrikov, K.;Rider, A. E.;Furman, S. A.;
12:60:6 Hydrogen in plasma-nanofabrication: Selective control of nanostructure heating and passivation
DOI:10.1063/1.3374324 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Wolter, Matthias;Levchenko, Igor;Kersten, Holger;Ostrikov, Kostya (Ken);
12:60:7 Plasma-produced phase-pure cuprous oxide nanowires for methane gas sensing
DOI:10.1063/1.4869435 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Cheng, Qijin;Yan, Wei;Randeniya, Lakshman;Zhang, Fengyan;Ostrikov, Kostya (Ken);
12:60:8 Silicon on silicon: self-organized nanotip arrays formed in reactive Ar + H-2 plasmas
DOI:10.1088/0957-4484/21/2/025605 JN:NANOTECHNOLOGY PY:2010
TC:32 AU: Levchenko, I.;Huang, S. Y.;Ostrikov, K.;Xu, S.;
12:60:9 Rapid, simultaneous activation of thin nanowire growth in low-temperature, low-pressure chemically active plasmas
DOI:10.1039/c1jm10318k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:10 AU: Ostrikov, Kostya (Ken);Mehdipour, Hamid;
12:60:10 Nanotube array controlled carbon plasma deposition
DOI:10.1063/1.4811747 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Qian, Shi;Cao, Huiliang;Liu, Xuanyong;Ding, Chuanxian;
12:60:11 Plasma-enabled growth of separated, vertically aligned copper-capped carbon nanocones on silicon
DOI:10.1063/1.3502562 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Kumar, S.;Levchenko, I.;Keidar, M.;Ostrikov, K.;
12:60:12 Energy and matter-efficient size-selective growth of thin quantum wires in a plasma
DOI:10.1063/1.3540645 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Ostrikov, K.;Mehdipour, H.;
12:60:13 Copper-Capped Carbon Nanocones on Silicon: Plasma-Enabled Growth Control
DOI:10.1021/am301680a JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:2 AU: Kumar, Shailesh;Levchenko, Igor;Farrant, David;Keidar, Michael;Kersten, Holger;Ostrikov, Kostya (Ken);
12:60:14 Self-organization of SiO2 nanodots deposited by chemical vapor deposition using an atmospheric pressure remote microplasma
DOI:10.1063/1.3360228 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Arnoult, G.;Belmonte, T.;Henrion, G.;
12:60:15 Plasma enables edge-to-center-oriented graphene nanoarrays on Si nanograss
DOI:10.1063/1.3681782 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kumar, S.;Levchenko, I.;Cheng, Q. J.;Shieh, J.;Ostrikov, K.;
12:60:16 Low- and high-temperature controls in carbon nanofiber growth in reactive plasmas
DOI:10.1088/0957-4484/21/45/455605 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Mehdipour, H.;Ostrikov, K.;Rider, A. E.;
12:60:17 Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions
DOI:10.1063/1.3657146 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Hacohen-Gourgy, S.;Diamant, I.;Almog, B.;Dubi, Y.;Deutscher, G.;
12:60:18 Plasma control of morpho-dimensional selectivity of hematite nanostructures
DOI:10.1063/1.4729053 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Cvelbar, U.;Levchenko, I.;Filipic, G.;Mozetic, M.;Ostrikov, K.;
12:60:19 Realizing a variety of carbon nanostructures at low temperature using MW-PECVD of (CH4 + H-2) plasma
DOI:10.1016/j.apsusc.2013.03.011 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Banerjee, Amit;Das, Debajyoti;
12:60:20 Real-time monitoring of nucleation-growth cycle of carbon nanoparticles in acetylene plasmas
DOI:10.1063/1.3599893 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Hundt, Morten;Sadler, Patrick;Levchenko, Igor;Wolter, Matthias;Kersten, Holger;Ostrikov, Kostya (Ken);
12:60:21 Magnetic control of breakdown: Toward energy-efficient hollow-cathode magnetron discharges
DOI:10.1063/1.3553853 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Baranov, O.;Romanov, M.;Kumar, S.;Zong, X. X.;Ostrikov, K.;
12:60:22 Optical emission spectroscopy of microwave-plasmas at atmospheric pressure applied to the growth of organosilicon and organotitanium nanopowders
DOI:10.1063/1.4868899 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kilicaslan, A.;Levasseur, O.;Roy-Garofano, V.;Profili, J.;Moisan, M.;Cote, C.;Sarkissian, A.;Stafford, L.;
12:60:23 Nanoporous Glass Films on Liquids
DOI:10.1021/am404570a JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Zuber, Kamil;Evans, Drew;Murphy, Peter;
12:60:24 Disentangling fluxes of energy and matter in plasma-surface interactions: Effect of process parameters
DOI:10.1063/1.3475728 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Wolter, M.;Levchenko, I.;Karsten, H.;Kumar, S.;Ostrikov, K.;
12:60:25 Control of ion density distribution by magnetic traps for plasma electrons
DOI:10.1063/1.4757022 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Baranov, Oleg;Romanov, Maxim;Fang, Jinghua;Cvelbar, Uros;Ostrikov, Kostya (Ken);
12:60:26 Ignition and temperature behavior of a single-wall carbon nanotube sample
DOI:10.1088/0957-4484/21/9/095705 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Volotskova, O.;Shashurin, A.;Keidar, M.;Raitses, Y.;Demidov, V.;Adams, S.;
12:60:27 High-rate deposition by microwave RPECVD at atmospheric pressure
DOI:10.1016/j.tsf.2011.02.003 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Cardoso, R. P.;Belmonte, T.;Kosior, F.;Henrion, G.;Tixhon, E.;
12:60:28 Application of printed nanocrystalline diamond film for electron emission cathode
DOI:10.1016/j.apsusc.2010.10.067 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Zhang, Xiuxia;Wei, Shuyi;Lei, Chongmin;Wei, Jie;Lu, Bingheng;Ding, Yucheng;Zhu, Changchun;
12:60:29 Low pressure plasma modified polycarbonate: A transparent, low reflective and scratch resistant material for automotive applications
DOI:10.1016/j.apsusc.2014.04.105 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: De Vietro, Nicoletta;Belforte, Luca;Lambertini, Vito Guido;Fracassi, Francesco;
12:60:30 The effect of bovine endosteum-derived particles on the proliferation of human mesenchymal stem cells
DOI:10.1016/j.biomaterials.2010.03.054 JN:BIOMATERIALS PY:2010
TC:4 AU: Nigro, Julie;White, Jacinta F.;Ramshaw, John A. M.;Haylock, David N.;Nilsson, Susan K.;Werkmeister, Jerome A.;
12:60:31 Catalytic performance of Ni-Al nanoparticles fabricated by arc plasma evaporation for methanol decomposition
DOI:10.1016/j.ijhydene.2014.06.167 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Xu, Ya;Yang, Junyou;Demura, Masahiko;Hirano, Toshiyuki;Matsushita, Yoshitaka;Tanaka, Masahiko;Katsuya, Yoshio;
12:60:32 Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries
DOI:10.1063/1.3310805 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Kang, Sung-Oong;Hong, Sahwan;Choi, Jinsik;Kim, Jin-Soo;Hwang, Inrok;Byun, Ik-Su;Kim, Yeon Soo;Kim, Wondong;Park, Bae Ho;
12:60:33 Analysis of mass transport in an atmospheric pressure remote plasma-enhanced chemical vapor deposition process
DOI:10.1063/1.3294966 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Cardoso, R. P.;Belmonte, T.;Henrion, G.;Gries, T.;Tixhon, E.;
12:60:34 Magnetic control of breakdown: Toward energy-efficient hollow-cathode magnetron discharges (vol 109, 063304, 2011)
DOI:10.1063/1.3638131 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Baranov, O.;Romanov, M.;Kumar, S.;Zhong, X. X.;Ostrikov, K.;
12:60:35 Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology
DOI:10.1116/1.3524906 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Peckerar, Martin;Dornajafi, Mahsa;Dilli, Zeynep;Goldsman, Neil;Ngu, Yves;Boerger, Brent;Van Wyck, Neil;Gravelin, James;Grenon, Brian;Proctor, Robert B.;Lowy, Daniel A.;
12:61:1 Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
DOI:10.1063/1.3703585 JN:APPLIED PHYSICS LETTERS PY:2012
TC:30 AU: Du, Weijie;Suzuno, Mitsushi;Khan, M. Ajmal;Toh, Katsuaki;Baba, Masakazu;Nakamura, Kotaro;Toko, Kaoru;Usami, Noritaka;Suemasu, Takashi;
12:61:2 Precipitation control and activation enhancement in boron-doped p(+)-BaSi2 films grown by molecular beam epitaxy
DOI:10.1063/1.4885553 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Khan, M. Ajmal;Nakamura, K.;Du, W.;Toko, K.;Usami, N.;Suemasu, T.;
12:61:3 Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
DOI:10.1063/1.4824335 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Baba, Masakazu;Tsurekawa, Sadahiro;Watanabe, Kentaro;Du, W.;Toko, Kaoru;Hara, Kosuke O.;Usami, Noritaka;Sekiguchi, Takashi;Suemasu, Takashi;
12:61:4 Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
DOI:10.1063/1.4896760 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Tsukahara, D.;Baba, M.;Honda, S.;Imai, Y.;Hara, K. O.;Usami, N.;Toko, K.;Werner, J. H.;Suemasu, T.;
12:61:5 Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
DOI:10.1016/j.jcrysgro.2012.03.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:34 AU: Baba, Masakazu;Toh, Katsuaki;Toko, Kaoru;Saito, Noriyuki;Yoshizawa, Noriko;Jiptner, Karolin;Sekiguchi, Takashi;Hara, Kosuke O.;Usami, Noritaka;Suemasu, Takashi;
12:61:6 Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
DOI:10.1063/1.4790597 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Nakamura, K.;Baba, M.;Khan, M. Ajmal;Du, W.;Sasase, M.;Hara, K. O.;Usami, N.;Toko, K.;Suemasu, T.;
12:61:7 Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy
DOI:10.1063/1.4904864 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Baba, Masakazu;Hara, Kosuke O.;Tsukahara, Daichi;Toko, Kaoru;Usami, Noritaka;Sekiguchi, Takashi;Suemasu, Takashi;
12:61:8 Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
DOI:10.1063/1.4759246 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:23 AU: Hara, K. O.;Usami, N.;Toh, K.;Baba, M.;Toko, K.;Suemasu, T.;
12:61:9 Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
DOI:10.1063/1.4882117 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Du, Weijie;Baba, Masakazu;Toko, Kaoru;Hara, Kosuke O.;Watanabe, Kentaro;Sekiguchi, Takashi;Usami, Noritaka;Suemasu, Takashi;
12:61:10 (Sr,Ba)(Si,Ge)(2) for thin-film solar-cell applications: First-principles study
DOI:10.1063/1.4880662 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:6 AU: Kumar, Mukesh;Umezawa, Naoto;Imai, Motoharu;
12:61:11 Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)
DOI:10.1063/1.4878159 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:9 AU: Takabe, Ryota;Hara, Kosuke O.;Baba, Masakazu;Du, Weijie;Shimada, Naoya;Toko, Kaoru;Usami, Noritaka;Suemasu, Takashi;
12:61:12 Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
DOI:10.1016/j.jcrysgro.2012.01.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:28 AU: Toh, Katsuaki;Hara, Kosuke O.;Usami, Noritaka;Saito, Noriyuki;Yoshizawa, Noriko;Toko, Kaoru;Suemasu, Takashi;
12:61:13 In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications
DOI:10.1063/1.4796142 JN:APPLIED PHYSICS LETTERS PY:2013
TC:18 AU: Khan, M. Ajmal;Hara, K. O.;Du, W.;Baba, M.;Nakamura, K.;Suzuno, M.;Toko, K.;Usami, N.;Suemasu, T.;
12:61:14 Shrinking and Growing: Grain Boundary Density Reduction for Efficient Polysilicon Thin-Film Solar Cells
DOI:10.1021/nl3041492 JN:NANO LETTERS PY:2012
TC:10 AU: Kim, Dong Rip;Lee, Chi Hwan;Weisse, Jeffrey M.;Cho, In Sun;Zheng, Xiaolin;
12:61:15 N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
DOI:10.1016/j.tsf.2013.08.038 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Hara, Kosuke O.;Hoshi, Yusuke;Usami, Noritaka;Shiraki, Yasuhiro;Nakamura, Kotaro;Toko, Kaoru;Suemasu, Takashi;
12:61:16 Hard x-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
DOI:10.1063/1.4823784 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Baba, Masakazu;Ito, Keita;Du, Weijie;Sanai, Tatsunori;Okamoto, Kazuaki;Toko, Kaoru;Ueda, Shigenori;Imai, Yoji;Kimura, Akio;Suemasu, Takashi;
12:61:17 Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Nakamura, K.;Toh, K.;Baba, M.;Khan, M. Ajmal;Du, W.;Toko, K.;Suemasu, T.;
12:61:18 Characterization of Cu(InGa)Se-2 grain boundary properties by electron- and tip-probe methods
DOI:10.1016/j.tsf.2010.12.223 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Oonishi, Satoshi;Kawamura, Masahiro;Takano, Naoaki;Hashimoto, Daisuke;Yamada, Akira;Konagai, Makoto;
12:61:19 Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
DOI:10.1016/j.tsf.2012.09.005 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Khan, M. Ajmal;Saito, T.;Nakamura, K.;Baba, M.;Du, W.;Toh, K.;Toko, K.;Suemasu, T.;
12:61:20 Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications
DOI:10.1016/j.tsf.2013.02.003 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Yoneyama, Takahiro;Okada, Atsushi;Suzuno, Mitsushi;Shibutami, Tetsuo;Matsumaru, Keitaro;Saito, Noriyuki;Yoshizawa, Noriko;Toko, Kaoru;Suemasu, Takashi;
12:61:21 Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
DOI:10.1016/j.tsf.2013.02.014 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Hara, K. O.;Hoshi, Y.;Usami, N.;Shiraki, Y.;Nakamura, K.;Toko, K.;Suemasu, T.;
12:61:22 N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism
DOI:10.1016/j.tsf.2014.07.049 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Hara, Kosuke O.;Usami, Noritaka;Baba, Masakazu;Toko, Kaoru;Suemasu, Takashi;
12:61:23 Investigating minority carrier trapping in n-type Cz silicon by transient photoconductance measurements
DOI:10.1063/1.3689786 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Hu, Yu;Schon, Hendrik;Nielsen, Oyvind;Ovrelid, Eivind Johannes;Arnberg, Lars;
12:61:24 Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.176 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Baba, M.;Toh, K.;Toko, K.;Hara, K. O.;Usami, N.;Saito, N.;Yoshizawa, N.;Suemasu, T.;
12:61:25 Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Koike, S.;Toh, K.;Baba, M.;Toko, K.;Hara, K. O.;Usami, N.;Saito, N.;Yoshizawa, N.;Suemasu, T.;
12:61:26 Investigating thermal donors in n-type Cz silicon with carrier density imaging
DOI:10.1063/1.4754276 JN:AIP ADVANCES PY:2012
TC:5 AU: Hu, Yu;Schon, Hendrik;Ovrelid, Eivind Johannes;Nielsen, Oyvind;Arnberg, Lars;
12:61:27 Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells
DOI:10.1016/j.tsf.2011.05.028 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Suemasu, Takashi;Saito, Takanobu;Toh, Katsuaki;Okada, Atsushi;Khan, Muhammad Ajmal;
12:61:28 Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
DOI:10.1016/j.jcrysgro.2012.12.153 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Khan, M. Ajmal;Hara, Kosuke O.;Nakamura, Kotaro;Du, Weijie;Baba, Masakazu;Toh, Katsuaki;Suzuno, Mitsushi;Toko, Kaoru;Usami, Noritaka;Suemasu, Takashi;
12:61:29 The Harrison diffusion kinetics regimes in solute grain boundary diffusion
DOI:10.1080/14786435.2012.657710 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:3 AU: Belova, I. V.;Fiedler, T.;Kulkarni, N.;Murch, G. E.;
12:61:30 Potential barrier at grain boundaries in polycrystalline silicon: influence of grain-boundary character and copper/iron contamination
DOI:10.1080/14786435.2012.753482 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:2 AU: Tsurekawa, Sadahiro;Takahashi, Hiroaki;Nishibe, Yumi;Watanabe, Tadao;
12:62:1 Super Deformability and Young's Modulus of GaAs Nanowires
DOI:10.1002/adma.201004122 JN:ADVANCED MATERIALS PY:2011
TC:32 AU: Wang, Yan-Bo;Wang, Li-Feng;Joyce, Hannah J.;Gao, Qiang;Liao, Xiao-Zhou;Mai, Yiu-Wing;Tan, Hoe H.;Zou, Jin;Ringer, Simon P.;Gao, Hua-Jian;Jagadish, Chennupati;
12:62:2 Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing
DOI:10.1021/nl402180k JN:NANO LETTERS PY:2013
TC:7 AU: Chen, Bin;Wang, Jun;Gao, Qiang;Chen, Yujie;Liao, Xiaozhou;Lu, Chunsheng;Tan, Hark Hoe;Mai, Yiu-Wing;Zou, Jin;Ringer, Simon P.;Gao, Huajian;Jagadish, Chennupati;
12:62:3 Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate
DOI:10.1063/1.4818957 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Yuan, Zaoshi;Shimamura, Kohei;Shimojo, Fuyuki;Nakano, Aiichiro;
12:62:4 Self-Healing of Fractured GaAs Nanowires
DOI:10.1021/nl104330h JN:NANO LETTERS PY:2011
TC:19 AU: Wang, Yanbo;Joyce, Hannah J.;Gao, Qiang;Liao, Xiaozhou;Tan, H. Hoe;Zou, Jin;Ringer, Simon P.;Shan, Zhiwei;Jagadish, Chennupati;
12:62:5 Self-Replicating Twins in Nanowires
DOI:10.1021/nl402881v JN:NANO LETTERS PY:2013
TC:6 AU: Yuan, Zaoshi;Nakano, Aiichiro;
12:62:6 Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
DOI:10.1021/nl400561j JN:NANO LETTERS PY:2013
TC:12 AU: Chi, Chun-Yung;Chang, Chia-Chi;Hu, Shu;Yeh, Ting-Wei;Cronin, Stephen B.;Dapkus, P. Daniel;
12:62:7 Effects of twins on the electronic properties of GaAs
DOI:10.1063/1.4811746 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Shimamura, Kohei;Yuan, Zaoshi;Shimojo, Fuyuki;Nakano, Aiichiro;
12:62:8 Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires
DOI:10.1021/nl403240r JN:NANO LETTERS PY:2013
TC:5 AU: Zheng, He;Wang, Jian;Huang, Jian Yu;Wang, Jianbo;Zhang, Ze;Mao, Scott X.;
12:62:9 Twin superlattice-induced large surface recombination velocity in GaAs nanostructures
DOI:10.1063/1.4903487 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Sheng, Chunyang;Brown, Evan;Shimojo, Fuyuki;Nakano, Aiichiro;
12:62:10 Tailoring the Vapor-Liquid-Solid Growth toward the Self-Assembly of GaAs Nanowire Junctions
DOI:10.1021/nl202888e JN:NANO LETTERS PY:2011
TC:11 AU: Dai, Xing;Dayeh, Shadi A.;Veeramuthu, Vaithianathan;Larrue, Alexandre;Wang, Jian;Su, Haibin;Soci, Cesare;
12:62:11 Anelastic Behavior in GaAs Semiconductor Nanowires
DOI:10.1021/nl401175t JN:NANO LETTERS PY:2013
TC:9 AU: Chen, Bin;Gao, Qiang;Wang, Yanbo;Liao, Xiaozhou;Mai, Yiu-Wing;Tan, Hark Hoe;Zou, Jin;Ringer, Simon P.;Jagadish, Chennupati;
12:62:12 Core/shell structural transformation and brittle-to-ductile transition in nanowires
DOI:10.1063/1.3703303 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Yuan, Zaoshi;Nomura, Ken-ichi;Nakano, Aiichiro;
12:62:13 Self-healing in fractured GaAs nanowires
DOI:10.1016/j.actamat.2012.07.013 JN:ACTA MATERIALIA PY:2012
TC:2 AU: Wang, Jun;Lu, Chunsheng;Wang, Qi;Xiao, Pan;Ke, Fujiu;Bai, Yilong;Shen, Yaogen;Wang, Yanbo;Chen, Bin;Liao, Xiaozhou;Gao, Huajian;
12:62:14 A core/shell mechanism for stacking-fault generation in GaAs nanowires
DOI:10.1063/1.3703765 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Yuan, Zaoshi;Nomura, Ken-ichi;Nakano, Aiichiro;
12:62:15 Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires
DOI:10.1021/nn503629d JN:ACS NANO PY:2014
TC:1 AU: Carapezzi, Stefania;Priante, Giacomo;Grillo, Vincenzo;Montes, Laurent;Rubini, Silvia;Cavallini, Anna;
12:62:16 Size-dependent elasticity of amorphous silica nanowire: A molecular dynamics study
DOI:10.1063/1.4830038 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yuan, Fenglin;Huang, Liping;
12:62:17 Critical dimensions of highly lattice mismatched semiconductor nanowires grown in strain-releasing configurations
DOI:10.1063/1.4704565 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Sburlan, Suzana;Dapkus, P. Daniel;Nakano, Aiichiro;
12:62:18 Bonding and Structure of Ceramic-Ceramic Interfaces
DOI:10.1103/PhysRevLett.111.066103 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:2 AU: Shimamura, Kohei;Shimojo, Fuyuki;Kalia, Rajiv K.;Nakano, Aiichiro;Vashishta, Priya;
12:62:19 Assisted self-healing in ripped graphene
DOI:10.1103/PhysRevB.82.195434 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Blackberg, L.;Ringbom, A.;Sjostrand, H.;Klintenberg, M.;
12:62:20 Effect of substrate strain on critical dimensions of highly lattice mismatched defect-free nanorods
DOI:10.1063/1.3688288 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Sburlan, Suzana;Nakano, Aiichiro;Dapkus, P. Daniel;
12:62:21 Anomalous surface states modify the size-dependent mechanical properties and fracture of silica nanowires
DOI:10.1088/0957-4484/25/43/435702 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Tang, Chun;Davila, Lilian P.;
12:63:1 Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency
DOI:10.1063/1.3284514 JN:APPLIED PHYSICS LETTERS PY:2010
TC:79 AU: Heindel, T.;Schneider, C.;Lermer, M.;Kwon, S. H.;Braun, T.;Reitzenstein, S.;Hoefling, S.;Kamp, M.;Forchel, A.;
12:63:2 Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots
DOI:10.1021/nl300733f JN:NANO LETTERS PY:2012
TC:27 AU: Bounouar, S.;Elouneg-Jamroz, M.;den Hertog, M.;Morchutt, C.;Bellet-Amalric, E.;Andre, R.;Bougerol, C.;Genuist, Y.;Poizat, J. -Ph.;Tatarenko, S.;Kheng, K.;
12:63:3 Blue single photon emission up to 200K from an InGaN quantum dot in AlGaN nanowire
DOI:10.1063/1.4803441 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Deshpande, Saniya;Das, Ayan;Bhattacharya, Pallab;
12:63:4 Room temperature single photon emission from an epitaxially grown quantum dot
DOI:10.1063/1.3683498 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Fedorych, O.;Kruse, C.;Ruban, A.;Hommel, D.;Bacher, G.;Kuemmell, T.;
12:63:5 Single photon emission from InGaN/GaN quantum dots up to 50 K
DOI:10.1063/1.3683521 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Kremling, Stefan;Tessarek, Christian;Dartsch, Heiko;Figge, Stephan;Hoefling, Sven;Worschech, Lukas;Kruse, Carsten;Hommel, Detlef;Forchel, Alfred;
12:63:6 Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K
DOI:10.1063/1.4894729 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Quitsch, Wolf;Kuemmell, Tilmar;Gust, Arne;Kruse, Carsten;Hommel, Detlef;Bacher, Gerd;
12:63:7 Triggered single-photon emission from electrically excited quantum dots in the red spectral range
DOI:10.1063/1.3497016 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Reischle, M.;Kessler, C.;Schulz, W. -M.;Eichfelder, M.;Rossbach, R.;Jetter, M.;Michler, P.;
12:63:8 An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150K
DOI:10.1063/1.4848195 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Deshpande, Saniya;Bhattacharya, Pallab;
12:63:9 Visible-to-Telecom Quantum Frequency Conversion of Light from a Single Quantum Emitter
DOI:10.1103/PhysRevLett.109.147404 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:30 AU: Zaske, Sebastian;Lenhard, Andreas;Kessler, Christian A.;Kettler, Jan;Hepp, Christian;Arend, Carsten;Albrecht, Roland;Schulz, Wolfgang-Michael;Jetter, Michael;Michler, Peter;Becher, Christoph;
12:63:10 Electrically driven quantum dot single-photon source at 2 GHz excitation repetition rate with ultra-low emission time jitter
DOI:10.1063/1.4774392 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Hargart, F.;Kessler, C. A.;Schwarzbaeck, T.;Koroknay, E.;Weidenfeld, S.;Jetter, M.;Michler, P.;
12:63:11 Strong antibunching from electrically driven devices with long pulses: A regime for quantum-dot single-photon generation
DOI:10.1103/PhysRevB.86.115326 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Kessler, C. A.;Reischle, M.;Hargart, F.;Schulz, W. -M.;Eichfelder, M.;Rossbach, R.;Jetter, M.;Michler, P.;Gartner, P.;Florian, M.;Gies, C.;Jahnke, F.;
12:63:12 Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
DOI:10.1103/PhysRevB.85.035428 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Bounouar, S.;Morchutt, C.;Elouneg-Jamroz, M.;Besombes, L.;Andre, R.;Bellet-Amalric, E.;Bougerol, C.;Den Hertog, M.;Kheng, K.;Tatarenko, S.;Poizat, J. Ph;
12:63:13 Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K
DOI:10.1063/1.3633218 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Bommer, M.;Schulz, W. -M.;Rossbach, R.;Jetter, M.;Michler, P.;Thomay, T.;Leitenstorfer, A.;Bratschitsch, R.;
12:63:14 Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire
DOI:10.1103/PhysRevB.86.085325 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Bounouar, S.;Trichet, A.;Elouneg-Jamroz, M.;Andre, R.;Bellet-Amalric, E.;Bougerol, C.;Den Hertog, M.;Kheng, K.;Tatarenko, S.;Poizat, J. -Ph.;
12:63:15 Growth of II-VI ZnSe/CdSe nanowires for quantum dot luminescence
DOI:10.1016/j.jcrysgro.2012.10.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Bellet-Amalric, E.;Elouneg-Jamroz, M.;Rueda-Fonseca, P.;Bounouar, S.;Den Hertog, M.;Bougerol, C.;Andre, R.;Genuist, Y.;Poizat, J. P.;Kheng, K.;Cibert, J.;Tatarenko, S.;
12:63:16 Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
DOI:10.1016/j.jcrysgro.2012.08.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Winden, Andreas;Mikulics, Martin;Stoica, Toma;von der Ahe, Martina;Mussler, Gregor;Haab, Anna;Gruetzmacher, Detlev;Hardtdegen, Hilde;
12:63:17 High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W
DOI:10.1063/1.4793299 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Schwarzbaeck, T.;Bek, R.;Hargart, F.;Kessler, C. A.;Kahle, H.;Koroknay, E.;Jetter, M.;Michler, P.;
12:63:18 Insertion of CdSe quantum dots in ZnSe nanowires: Correlation of structural and chemical characterization with photoluminescence
DOI:10.1063/1.3618685 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Den Hertog, M.;Elouneg-Jamroz, M.;Bellet-Amalric, E.;Bounouar, S.;Bougerol, C.;Andre, R.;Genuist, Y.;Poizat, J. P.;Kheng, K.;Tatarenko, S.;
12:63:19 Vertically integrated (Ga, In) N nanostructures for future single photon emitters operating in the telecommunication wavelength range
DOI:10.1088/0957-4484/24/40/405302 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Winden, A.;Mikulics, M.;Gruetzmacher, D.;Hardtdegen, H.;
12:63:20 Enhanced Up-Conversion of Entangled Photons and Quantum Interference under a Localized Field in Nanostructures
DOI:10.1103/PhysRevLett.112.133601 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:1 AU: Osaka, Yoshiki;Yokoshi, Nobuhiko;Nakatani, Masatoshi;Ishihara, Hajime;
12:63:21 Single quantum dot photocurrent spectroscopy in the cavity quantum electrodynamics regime
DOI:10.1103/PhysRevB.86.161301 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Gold, P.;Gschrey, M.;Schneider, C.;Hoefling, S.;Forchel, A.;Kamp, M.;Reitzenstein, S.;
12:63:22 Enhanced color conversion from colloidal CdSe/CdS dot/rods by vertical microcavities
DOI:10.1063/1.3491065 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Puehringer, H.;Roither, J.;Kovalenko, M. V.;Eibelhuber, M.;Schwarzl, T.;Talapin, D. V.;Heiss, W.;
12:63:23 Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot
DOI:10.1063/1.4750241 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Dusanowski, L.;Golnik, A.;Syperek, M.;Nawrocki, M.;Sek, G.;Misiewicz, J.;Schlereth, T. W.;Schneider, C.;Hoefling, S.;Kamp, M.;Forchel, A.;
12:63:24 Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
DOI:10.1016/j.mseb.2013.08.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:0 AU: Oliver, Rachel A.;El-Ella, Haitham A. R.;Collins, Daniel P.;Reid, Benjamin;Zhang, Yucheng;Christie, Fiona;Kappers, Menno J.;Taylor, Robert A.;
12:63:25 Radiative recombination in photoexcited quantum dots up to room temperature: The role of fine-structure effects
DOI:10.1103/PhysRevB.81.241306 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Kuemmell, T.;Zaitsev, S. V.;Gust, A.;Kruse, C.;Hommel, D.;Bacher, G.;
12:63:26 Anti-bunched photons from a lateral light-emitting diode
DOI:10.1063/1.3643056 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Lunghi, Tommaso;De Simoni, Giorgio;Piazza, Vincenzo;Nicoll, Christine A.;Beere, Harvey E.;Ritchie, David A.;Beltram, Fabio;
12:63:27 Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis
DOI:10.1016/j.jcrysgro.2010.11.159 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: den Hertog, M.;Elouneg-Jamroz, M.;Bellet-Amalric, E.;Bounouar, S.;Bougerol, C.;Andre, R.;Genuist, Y.;Poizat, J. P.;Kheng, K.;Tatarenko, S.;
12:63:28 Pulsed single-photon resonant-cavity quantum dot LED
DOI:10.1016/j.jcrysgro.2010.08.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Schulz, W. -M.;Eichfelder, M.;Reischle, M.;Kessler, C.;Rossbach, R.;Jetter, M.;Michler, P.;
12:63:29 High power 1.25 mu m InAs quantum dot vertical external-cavity surface-emitting laser
DOI:10.1116/1.3555379 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Albrecht, Alexander R.;Hains, Christopher P.;Rotter, Thomas J.;Stintz, Andreas;Malloy, Kevin J.;Balakrishnan, Ganesh;Moloney, Jerome V.;
12:63:30 Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots (vol 12, pg 2977, 2012)
DOI:10.1021/nl5005724 JN:NANO LETTERS PY:2014
TC:0 AU: Bounouar, S.;Elouneg-Jamroz, M.;den Hertog, M.;Morchutt, C.;Bellet-Amalric, E.;Andre, R.;Bougerol, C.;Genuist, Y.;Poizat, J. -Ph.;Tatarenko, S.;Kheng, K.;
12:64:1 Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
DOI:10.1063/1.3369434 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:40 AU: Ramesh, V.;Kikuchi, A.;Kishino, K.;Funato, M.;Kawakami, Y.;
12:64:2 Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
DOI:10.1063/1.3280032 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:35 AU: Kawakami, Y.;Kaneta, A.;Su, L.;Zhu, Y.;Okamoto, K.;Funato, M.;Kikuchi, A.;Kishino, K.;
12:64:3 Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography
DOI:10.1088/0957-4484/24/40/405303 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Zhuang, Zhe;Guo, Xu;Zhang, Guogang;Liu, Bin;Zhang, Rong;Zhi, Ting;Tao, Tao;Ge, Haixiong;Ren, Fangfang;Xie, Zili;Zheng, Youdou;
12:64:4 How much better are InGaN/GaN nanodisks than quantum wells-Oscillator strength enhancement and changes in optical properties
DOI:10.1063/1.4864083 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Zhang, Lei;Lee, Leung-Kway;Teng, Chu-Hsiang;Hill, Tyler A.;Ku, Pei-Cheng;Deng, Hui;
12:64:5 Characterization of InGaN-based nanorod light emitting diodes with different indium compositions
DOI:10.1063/1.4725417 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:18 AU: Bai, J.;Wang, Q.;Wang, T.;
12:64:6 Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
DOI:10.1063/1.4898685 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhuang, Y. D.;Bruckbauer, J.;Shields, P. A.;Edwards, P. R.;Martin, R. W.;Allsopp, D. W. E.;
12:64:7 Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes
DOI:10.1039/c1jm13640b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:20 AU: Jeon, Dae-Woo;Choi, Won Mook;Shin, Hyeon-Jin;Yoon, Seon-Mi;Choi, Jae-Young;Jang, Lee-Woon;Lee, In-Hwan;
12:64:8 Single photon emission from site-controlled InGaN/GaN quantum dots
DOI:10.1063/1.4830000 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Zhang, Lei;Teng, Chu-Hsiang;Hill, Tyler A.;Lee, Leung-Kway;Ku, Pei-Cheng;Deng, Hui;
12:64:9 Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth
DOI:10.1016/j.jallcom.2012.11.194 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Polyakov, A. Y.;Jeon, Dae-Woo;Govorkov, A. V.;Smirnov, N. B.;Sokolov, V. N.;Kozhukhova, E. A.;Yakimov, E. B.;Lee, In-Hwan;
12:64:10 The fabrication of GaN-based nanopillar light-emitting diodes
DOI:10.1063/1.3488905 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Zhu, Jihong;Wang, Liangji;Zhang, Shuming;Wang, Hui;Zhao, Degang;Zhu, Jianjun;Liu, Zongshun;Jiang, Desheng;Yang, Hui;
12:64:11 Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
DOI:10.1063/1.3558990 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Holmes, Mark J.;Park, Young S.;Wang, Xu;Chan, Christopher C. S.;Jarjour, Anas F.;Taylor, Robert A.;Warner, Jamie H.;Luo, Jun;El-Ella, H. A. R.;Oliver, R. A.;
12:64:12 Is it viable to improve light output efficiency by nano-light-emitting diodes?
DOI:10.1063/1.4844715 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Wang, Chao-Hung;Huang, Yu-Wen;Wu, Shang-En;Liu, Chuan-Pu;
12:64:13 Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale
DOI:10.1063/1.4795294 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Chan, Christopher C. S.;Reid, Benjamin P. L.;Taylor, Robert A.;Zhuang, YiDing;Shields, Philip A.;Allsopp, Duncan W. E.;Jia, Wei;
12:64:14 Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging
DOI:10.1063/1.4733335 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Xie, E. Y.;Chen, Z. Z.;Edwards, P. R.;Gong, Z.;Liu, N. Y.;Tao, Y. B.;Zhang, Y. F.;Chen, Y. J.;Watson, I. M.;Gu, E.;Martin, R. W.;Zhang, G. Y.;Dawson, M. D.;
12:64:15 Microcathodoluminescence spectra evolution for planar and nanopillar multiquantum-well GaN-based structures as a function of electron irradiation dose
DOI:10.1116/1.4840255 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Yakimov, Eugene B.;Vergeles, Paul S.;Polyakov, Alexander Y.;Cho, Han-Su;Jang, Lee-Woon;Lee, In-Hwan;
12:64:16 Probing light emission from quantum wells within a single nanorod
DOI:10.1088/0957-4484/24/36/365704 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Bruckbauer, Jochen;Edwards, Paul R.;Bai, Jie;Wang, Tao;Martin, Robert W.;
12:64:17 Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
DOI:10.1088/0957-4484/22/26/265202 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Kunert, G.;Freund, W.;Aschenbrenner, T.;Kruse, C.;Figge, S.;Schowalter, M.;Rosenauer, A.;Kalden, J.;Sebald, K.;Gutowski, J.;Feneberg, M.;Tischer, I.;Fujan, K.;Thonke, K.;Hommel, D.;
12:64:18 Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
DOI:10.1063/1.4757942 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Polyakov, A. Y.;Jeon, Dae-Woo;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Yakimov, E. B.;Lee, In-Hwan;
12:64:19 Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks
DOI:10.1063/1.3672441 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Lee, L. K.;Zhang, Lei;Deng, Hui;Ku, P. -C.;
12:64:20 Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods
DOI:10.1088/0957-4484/21/11/115401 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Park, Young S.;Holmes, Mark J.;Kang, Tae W.;Taylor, Robert A.;
12:64:21 Optical studies on a single GaN nanocolumn containing a single InxGa1-xN quantum disk
DOI:10.1063/1.3601856 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Holmes, Mark J.;Park, Young S.;Wang, Xu;Chan, Christopher C. S.;Reid, Benjamin P. L.;Kim, HeeDae;Taylor, Robert A.;Warner, Jamie H.;Luo, Jun;
12:64:22 Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
DOI:10.1063/1.3580477 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Zhu, Jihong;Wang, Liangji;Zhang, Shuming;Wang, Hui;Zhao, Degang;Zhu, Jianjun;Liu, Zongshun;Jiang, Desheng;Yang, Hui;
12:64:23 Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate
DOI:10.1063/1.3436586 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Jang, Yuseong;Kim, Won Rae;Jang, Dong-Hyun;Shim, Jong-In;Shin, Dong-Soo;
12:64:24 Effects of spontaneous polarization on GaInN/GaN quantum well structures
DOI:10.1063/1.3600221 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Thomsen, M.;Joenen, H.;Rossow, U.;Hangleiter, A.;
12:64:25 Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
DOI:10.1063/1.4820395 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Sun, Hu;Ji, Ziwu;Wang, Huining;Xiao, Hongdi;Qu, Shuang;Xu, Xiangang;Jin, Aizi;Yang, Haifang;
12:64:26 N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array
DOI:10.1063/1.4823849 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Wang, Liancheng;Ma, Jun;Liu, Zhiqiang;Yi, Xiaoyan;Yuan, Guodong;Wang, Guohong;
12:64:27 Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
DOI:10.1063/1.4885455 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Choi, Won Hyuck;You, Guanjun;Abraham, Michael;Yu, Shih-Ying;Liu, Jie;Wang, Li;Xu, Jian;Mohney, Suzanne E.;
12:64:28 Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE
DOI:10.1016/j.jcrysgro.2012.12.165 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Yoo, Jinyeop;Choi, Sungkuk;Jung, Soohoon;Cho, Youngji;Lee, Jeungwoo;Lee, Sangtae;Lee, Wonjae;Lee, Hyunjae;Kim, Siyoung;Chang, Jiho;
12:64:29 A structural investigation of highly ordered catalyst- and mask-free GaN nanorods
DOI:10.1088/0957-4484/22/2/025603 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Figge, S.;Aschenbrenner, T.;Kruse, C.;Kunert, G.;Schowalter, M.;Rosenauer, A.;Hommel, D.;
12:65:1 Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
DOI:10.1016/j.jcrysgro.2011.12.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:25 AU: Liu, Guangyu;Zhang, Jing;Li, Xiao-Hang;Huang, G. S.;Paskova, Tanya;Evans, Keith R.;Zhao, Hongping;Tansu, Nelson;
12:65:2 Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
DOI:10.1063/1.3553880 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:36 AU: Zhang, Jing;Tong, Hua;Liu, Guangyu;Herbsommer, Juan A.;Huang, G. S.;Tansu, Nelson;
12:65:3 High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3624761 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:30 AU: Zhang, Jing;Kutlu, Songul;Liu, Guangyu;Tansu, Nelson;
12:65:4 Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
DOI:10.1063/1.3489086 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Tong, Hua;Zhang, Jing;Liu, Guangyu;Herbsommer, Juan A.;Huang, G. S.;Tansu, Nelson;
12:65:5 Colossal Thermoelectric Power Factor in K7/8RhO2
DOI:10.1002/adfm.201103106 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:11 AU: Saeed, Yasir;Singh, Nirpendra;Schwingenschloegl, Udo;
12:65:6 Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN
DOI:10.1063/1.4804174 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Sztein, Alexander;Haberstroh, John;Bowers, John E.;DenBaars, Steven P.;Nakamura, Shuji;
12:65:7 Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
DOI:10.1063/1.4759287 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Sztein, Alexander;Bowers, John E.;DenBaars, Steven P.;Nakamura, Shuji;
12:65:8 Growth of self-assembled InGaN quantum dots on Si (111) at reduced temperature by molecular beam epitaxy
DOI:10.1016/j.tsf.2013.05.010 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Chin, C. W.;Hassan, Z.;Yam, F. K.;Ahmad, M. A.;
12:65:9 Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations
DOI:10.1063/1.4904086 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Borges, P. D.;Scolfaro, L.;
12:65:10 Suppression of thermal conductivity in InxGa1-xN alloys by nanometer-scale disorder
DOI:10.1063/1.4798838 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Tong, T.;Fu, D.;Levander, A. X.;Schaff, W. J.;Pantha, B. N.;Lu, N.;Liu, B.;Ferguson, I.;Zhang, R.;Lin, J. Y.;Jiang, H. X.;Wu, J.;Cahill, David G.;
12:65:11 First-principles studies of the TE properties of [110]-Ge/Si core/shell nanowires with different surface structures
DOI:10.1039/c3ta14003b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:0 AU: Shen, Jin-Ni;Wu, Li-Ming;Zhang, Yong-Fan;
12:65:12 High temperature thermoelectric properties of optimized InGaN
DOI:10.1063/1.3670966 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Sztein, Alexander;Ohta, Hiroaki;Bowers, John E.;DenBaars, Steven P.;Nakamura, Shuji;
12:65:13 Microstructure of PAMBE-grown InN layers on Si(111)
DOI:10.1016/j.jcrysgro.2011.11.068 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Walther, R.;Litvinov, D.;Fotouhi, M.;Schneider, R.;Gerthsen, D.;Voehringer, R.;Hu, D. Z.;Schaadt, D. M.;
12:65:14 Incompatibility of standard III-V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration
DOI:10.1116/1.3701951 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:2 AU: Ramu, Ashok T.;Clinger, Laura E.;Dongmo, Pernell B.;Imamura, Jeffrey T.;Zide, Joshua M. O.;Bowers, John E.;
12:65:15 Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
DOI:10.1007/s11664-010-1416-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:12 AU: Hurwitz, Elisa N.;Asghar, Muhammad;Melton, Andrew;Kucukgok, Bahadir;Su, Liqin;Orocz, Mateusz;Jamil, Muhammad;Lu, Na;Ferguson, Ian T.;
12:65:16 Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
DOI:10.1063/1.4863420 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Sztein, Alexander;Bowers, John E.;DenBaars, Steven P.;Nakamura, Shuji;
12:65:17 Blue-violet boron-based Distributed Bragg Reflectors for VCSEL application
DOI:10.1016/j.jcrysgro.2010.09.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Abid, M.;Moudakir, T.;Djebbour, Z.;Orsal, G.;Gautier, S.;Naciri, A. En;Migan-Dubois, A.;Ougazzaden, A.;
12:65:18 Vacancy clustering and diffusion in heavily P doped Si
DOI:10.1063/1.3527967 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Hin, Celine;Dresselhaus, Mildred;Chen, Gang;
12:65:19 Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential
DOI:10.1063/1.4829674 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Araujo, Rafael B.;de Almeida, J. S.;Ferreira da Silva, A.;
12:65:20 Thermal Conductivity Measurements on Challenging Samples by the 3 Omega Method
DOI:10.1007/s11664-010-1265-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:7 AU: Jacquot, A.;Vollmer, F.;Bayer, B.;Jaegle, M.;Ebling, D. G.;Boettner, H.;
12:65:21 Optical study of the electronic structure and correlation effects in K0.49RhO2
DOI:10.1103/PhysRevB.84.075110 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Okazaki, R.;Nishina, Y.;Yasui, Y.;Shibasaki, S.;Terasaki, I.;
12:66:1 Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses
DOI:10.1103/PhysRevB.82.115102 JN:PHYSICAL REVIEW B PY:2010
TC:29 AU: Svane, A.;Christensen, N. E.;Gorczyca, I.;van Schilfgaarde, M.;Chantis, A. N.;Kotani, T.;
12:66:2 Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well
DOI:10.1103/PhysRevLett.109.186803 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:21 AU: Miao, M. S.;Yan, Q.;Van de Walle, C. G.;Lou, W. K.;Li, L. L.;Chang, K.;
12:66:3 Limitations to band gap tuning in nitride semiconductor alloys
DOI:10.1063/1.3357419 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Gorczyca, I.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:4 Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
DOI:10.1103/PhysRevB.81.235206 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Gorczyca, I.;Kaminska, A.;Staszczak, G.;Czernecki, R.;Lepkowski, S. P.;Suski, T.;Schenk, H. P. D.;Glauser, M.;Butte, R.;Carlin, J. -F.;Feltin, E.;Grandjean, N.;Christensen, N. E.;Svane, A.;
12:66:5 Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions
DOI:10.1063/1.4843015 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Gorczyca, I.;Skrobas, K.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:6 Hydrostatic pressure and strain effects in short period InN/GaN superlattices
DOI:10.1063/1.4748325 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Gorczyca, I.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:7 Built-in electric fields and valence band offsets in InN/GaN(0001) superlattices: First-principles investigations
DOI:10.1063/1.3573499 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Shieh, C. C.;Cui, X. Y.;Delley, B.;Stampfl, C.;
12:66:8 Ab initio study of elastic constants in InxGa1-xN and InxAl1-xN wurtzite alloys
DOI:10.1103/PhysRevB.83.203201 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Lepkowski, S. P.;Gorczyca, I.;
12:66:9 Size effects in band gap bowing in nitride semiconducting alloys
DOI:10.1103/PhysRevB.83.153301 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Gorczyca, I.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:10 Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells
DOI:10.1103/PhysRevB.88.081202 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Lepkowski, S. P.;Gorczyca, I.;Stefanska-Skrobas, K.;Christensen, N. E.;Svane, A.;
12:66:11 The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy
DOI:10.1063/1.4875558 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Suski, T.;Schulz, T.;Albrecht, M.;Wang, X. Q.;Gorczyca, I.;Skrobas, K.;Christensen, N. E.;Svane, A.;
12:66:12 Photoluminescence and pressure effects in short period InN/nGaN superlattices
DOI:10.1063/1.4796101 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Staszczak, G.;Gorczyca, I.;Suski, T.;Wang, X. Q.;Christensen, N. E.;Svane, A.;Dimakis, E.;Moustakas, T. D.;
12:66:13 Band gap bowing in quaternary nitride semiconducting alloys
DOI:10.1063/1.3597795 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Gorczyca, I.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:14 Two-dimensional electron gas in monolayer InN quantum wells
DOI:10.1063/1.4902916 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Pan, W.;Dimakis, E.;Wang, G. T.;Moustakas, T. D.;Tsui, D. C.;
12:66:15 Elastic constants, composition, and piezolectric polarization in InxAl1-xN: From ab initio calculations to experimental implications for the applicability of Vegard's rule
DOI:10.1103/PhysRevB.86.155310 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Xie, M-Y;Tasnadi, F.;Abrikosov, I. A.;Hultman, L.;Darakchieva, V.;
12:66:16 Theoretical study of InN/GaN short period superlattices to mimic disordered alloys
DOI:10.1063/1.4882879 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Ribeiro, M., Jr.;Marques, M.;
12:66:17 Electronic structure of a single-layer InN quantum well in a GaN matrix
DOI:10.1063/1.4794986 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Miao, M. S.;Yan, Q. M.;Van de Walle, C. G.;
12:66:18 Band gaps and internal electric fields in semipolar short period InN/GaN superlattices
DOI:10.1063/1.4882902 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Gorczyca, I.;Skrobas, K.;Suski, T.;Christensen, N. E.;Svane, A.;
12:66:19 Doping effects in InNI/GaN short-period quantum well structures-Theoretical studies based on density functional methods
DOI:10.1016/j.jcrysgro.2014.01.069 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Strak, Pawel;Kempisty, Pawel;Sakowski, Konrad;Krukowski, Stanislaw;
12:66:20 Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
DOI:10.1103/PhysRevB.88.125310 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Zhou, Lin;Dimakis, E.;Hathwar, R.;Aoki, Toshihiro;Smith, David J.;Moustakas, T. D.;Goodnick, S. M.;McCartney, Martha R.;
12:66:21 Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys
DOI:10.1016/j.materresbull.2012.04.115 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:11 AU: Li, Keyan;Kang, Congying;Xue, Dongfeng;
12:67:1 Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si
DOI:10.1016/j.jallcom.2013.04.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Polyakov, A. Y.;Smirnov, N. B.;Ha, Min-Woo;Hahn, Cheol-Koo;Kozhukhova, E. A.;Govorkov, A. V.;Ryzhuk, R. V.;Kargin, N. I.;Cho, Han-Su;Lee, In-Hwan;
12:67:2 Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth
DOI:10.1063/1.3599894 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Polyakov, A. Y.;Lee, I. -H.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Pearton, S. J.;
12:67:3 Spatial location of the E-c-0.6 eV electron trap in AlGaN/GaN heterojunctions
DOI:10.1116/1.4895840 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Lee, In-Hwan;Polyakov, Alexander Y.;Smirnov, Nikolai B.;Hahn, Cheol-Koo;Pearton, S. J.;
12:67:4 Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
DOI:10.1116/1.4795210 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:7 AU: Hwang, Ya-Shi;Liu, Lu;Ren, Fan;Polyakov, Alexander Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Kolin, N. G.;Boiko, V. M.;Vereyovkin, S. S.;Ermakov, V. S.;Lo, Chien-Fong;Laboutin, Oleg;Cao, Y.;Johnson, J. W.;Kargin, N. I.;Ryzhuk, R. V.;Pearton, Stephen J.;
12:67:5 Radiation effects in GaN materials and devices
DOI:10.1039/c2tc00039c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:24 AU: Polyakov, Alexander Y.;Pearton, S. J.;Frenzer, Patrick;Ren, Fan;Liu, Lu;Kim, Jihyun;
12:67:6 Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates
DOI:10.1116/1.4773057 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:8 AU: Polyakov, Alexander Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Pearton, Stephen J.;Ren, Fan;Lui, Lu;Johnson, J. Wayne;Kargin, N. I.;Ryzhuk, R. V.;
12:67:7 Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions
DOI:10.1116/1.4766727 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:10 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Pearton, Stephen J.;Ren, Fan;Liu, Lu;Johnson, J. W.;Lim, Wantae;Kolin, N. G.;Veryovkin, S. S.;Ermakov, V. S.;
12:67:8 Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy
DOI:10.1063/1.4882715 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Lee, In-Hwan;Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Usikov, A. S.;Helava, H.;Makarov, Yu. N.;Pearton, S. J.;
12:67:9 10 MeV electrons irradiation effects in variously doped n-GaN
DOI:10.1063/1.3596819 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Polyakov, A. Y.;Lee, In-Hwan;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Kolin, N. G.;Korulin, A. V.;Boiko, V. M.;Pearton, S. J.;
12:67:10 Neutron transmutation doping effects in GaN
DOI:10.1116/1.3431083 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:16 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kolin, N. G.;Merkurisov, D. I.;Boiko, V. M.;Korulin, A. V.;Pearton, S. J.;
12:67:11 Neutron irradiation effects on gallium nitride-based Schottky diodes
DOI:10.1063/1.4826091 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Lin, Chung-Han;Katz, Evan J.;Qiu, Jie;Zhang, Zhichun;Mishra, Umesh K.;Cao, Lei;Brillson, Leonard J.;
12:67:12 Deep electron and hole traps in neutron transmutation doped n-GaN
DOI:10.1116/1.3596571 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:8 AU: Lee, In-Hwan;Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Kolin, N. G.;Boiko, V. M.;Korulin, A. V.;Pearton, S. J.;
12:67:13 Metastable centers in AlGaN/AlN/GaN heterostructures
DOI:10.1116/1.4731256 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:5 AU: Polyakov, Alexander Y.;Smirnov, Nick B.;Govorkov, A. V.;Kozhukhova, E. A.;Pearton, Stephen J.;Ren, Fan;Karpov, S. Yu.;Shcherbachev, K. D.;Kolin, N. G.;Lim, Wantae;
12:67:14 Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition
DOI:10.1116/1.4820905 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Polyakov, Alexander Y.;Smirnov, N. B.;Kozhukhova, E. A.;Osinsky, Andrei V.;Pearton, Stephen J.;
12:67:15 Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy
DOI:10.1016/j.jallcom.2014.07.208 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Polyakov, A. Y.;Smirnov, N. B.;Yakimov, E. B.;Usikov, A. S.;Helava, H.;Shcherbachev, K. D.;Govorkov, A. V.;Makarov, Yu N.;Lee, In-Hwan;
12:67:16 Hydride vapor phase GaN films with reduced density of residual electrons and deep traps
DOI:10.1063/1.4876061 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Yugova, T. G.;Cox, H.;Usikov, A. S.;Helava, H.;Makarov, Yu.;
12:67:17 Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3671020 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:7 AU: Lo, Chien-Fong;Liu, L.;Kang, T. S.;Ren, Fan;Laboutin, O.;Cao, Y.;Johnson, J. W.;Polyakov, Alexander Y.;Smirnov, N. B.;Govorkov, A. V.;Belogorokhov, I. A.;Belogorokhov, A. I.;Pearton, S. J.;
12:67:18 Fine structure of the red luminescence band in undoped GaN
DOI:10.1063/1.4862790 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Reshchikov, M. A.;Usikov, A.;Helava, H.;Makarov, Yu.;
12:67:19 Deep traps and thermal measurements on AlGaN/GaN on Si transistors
DOI:10.1116/1.3605304 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Lo, C. F.;Ren, Fan;Pearton, S. J.;Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Belogorokhov, I. A.;Belogorokhov, A. I.;Reznik, V. Y.;Johnson, J. W.;
12:67:20 Electrical properties and radiation detector performance of free-standing bulk n-GaN
DOI:10.1116/1.3690644 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:9 AU: Lee, In-Hwan;Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Zaletin, V. M.;Gazizov, I. M.;Kolin, N. G.;Pearton, S. J.;
12:67:21 Neutron irradiation effects on metal-gallium nitride contacts
DOI:10.1063/1.4869552 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Katz, Evan J.;Lin, Chung-Han;Qiu, Jie;Zhang, Zhichun;Mishra, Umesh K.;Cao, Lei;Brillson, Leonard J.;
12:67:22 Neutron doping effects in epitaxially laterally overgrown n-GaN
DOI:10.1063/1.3593957 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Lee, In-Hwan;Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Yakimov, E. B.;Kolin, N. G.;Boiko, V. M.;Korulin, A. V.;Pearton, S. J.;
12:67:23 Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy
DOI:10.1063/1.3285408 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Dabiran, A. M.;Chow, P. P.;Wowchak, A. M.;Pearton, S. J.;
12:67:24 Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3567183 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Douglas, E. A.;Ren, F.;Pearton, S. J.;
12:67:25 Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
DOI:10.1063/1.4892834 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Uedono, Akira;Fujishima, Tatsuya;Piedra, Daniel;Yoshihara, Nakaaki;Ishibashi, Shoji;Sumiya, Masatomo;Laboutin, Oleg;Johnson, Wayne;Palacios, Tomas;
12:67:26 Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN
DOI:10.1063/1.4747917 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Ullah, M. W.;Kuronen, A.;Nordlund, K.;Djurabekova, F.;Karaseov, P. A.;Titov, A. I.;
12:67:27 Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation
DOI:10.1063/1.4829904 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Ullah, M. W.;Kuronen, A.;Nordlund, K.;Djurabekova, F.;Karaseov, P. A.;Karabeshkin, K. V.;Titov, A. I.;
12:67:28 Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth
DOI:10.1063/1.4793630 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Polyakov, A. Y.;Jeon, Dae-Woo;Lee, In-Hwan;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Yakimov, E. B.;
12:67:29 Effect of low dose gamma-irradiation on DC performance of circular nnlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4868632 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Hwang, Ya-Hsi;Hsieh, Yueh-Ling;Lei, Lei;Li, Shun;Ren, Fan;Pearton, Stephen J.;Yadav, Anupama;Schwarz, Casey;Shatkhin, Max;Wang, Luther;Flitsiyan, Elena;Chernyak, Leonid;Baca, Albert G.;Allerman, Andrew A.;Sanchez, Carlos A.;Kravchenko, I. I.;
12:67:30 Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier
DOI:10.1063/1.3634032 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Cho, E.;Brunner, F.;Zhytnytska, R.;Kotara, P.;Wuerfl, J.;Weyers, M.;
12:68:1 Alkanethiol-Passivated Ge Nanowires as High-Performance Anode Materials for Lithium-Ion Batteries: The Role of Chemical Surface Functionalization
DOI:10.1021/nn303519g JN:ACS NANO PY:2012
TC:66 AU: Yuan, Fang-Wei;Yang, Hong-Jie;Tuan, Hsing-Yu;
12:68:2 Chemical functionalisation of silicon and germanium nanowires
DOI:10.1039/c1jm11028d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:27 AU: Collins, Gillian;Holmes, Justin D.;
12:68:3 Alkane and Alkanethiol Passivation of Halogenated Ge Nanowires
DOI:10.1021/cm1023986 JN:CHEMISTRY OF MATERIALS PY:2010
TC:20 AU: Collins, Gillian;Fleming, Peter;Barth, Sven;O'Dwyer, Colm;Boland, John J.;Morris, Michael A.;Holmes, Justin D.;
12:68:4 Corrosion Resistance of Thiol- and Alkene-Passivated Germanium Nanowires
DOI:10.1021/cm1005696 JN:CHEMISTRY OF MATERIALS PY:2010
TC:29 AU: Holmberg, Vincent C.;Korgel, Brian A.;
12:68:5 Organic Functionalization of Germanium Nanowires using Arenediazonium Salts
DOI:10.1021/cm103573m JN:CHEMISTRY OF MATERIALS PY:2011
TC:16 AU: Collins, Gillian;Fleming, Peter;O'Dwyer, Colm;Morris, Michael A.;Holmes, Justin D.;
12:68:6 Stable functionalization of germanium surface and its application in biomolecules immobilization
DOI:10.1016/j.apsusc.2014.07.127 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Cai, Qi;Xu, Baojian;Ye, Lin;Tang, Teng;Huang, Shanluo;Du, Xiaowei;Bian, Xiaojun;Zhang, Jishen;Di, Zengfeng;Jin, Qinghui;Zhao, Jianlong;
12:68:7 PEGylation of Carboxylic Acid-Functionalized Germanium Nanowires
DOI:10.1021/la102124y JN:LANGMUIR PY:2010
TC:13 AU: Holmberg, Vincent C.;Rasch, Michael R.;Korgel, Brian A.;
12:68:8 Reliability Enhancement of Germanium Nanowires Using Graphene as a Protective Layer: Aspect of Thermal Stability
DOI:10.1021/am5001294 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Lee, Jae-Hyun;Choi, Soon-Hyung;Patole, Shashikant P.;Jang, Yamujin;Heo, Keun;Joo, Won-Jae;Yoo, Ji-Beom;Hwang, Sung Woo;Whang, Dongmok;
12:68:9 SiGe derivatization by spontaneous reduction of aryl diazonium salts
DOI:10.1016/j.apsusc.2013.05.091 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Girard, A.;Geneste, F.;Coulon, N.;Cardinaud, C.;Mohammed-Brahim, T.;
12:68:10 Germanium Oxide Removal by Citric Acid and Thiol Passivation from Citric Acid-Terminated Ge(100)
DOI:10.1021/la503819z JN:LANGMUIR PY:2014
TC:2 AU: Collins, Gillian;Aureau, Damien;Holmes, Justin D.;Etcheberry, Arnaud;O'Dwyer, Colm;
12:68:11 Reaction Mechanism, Bonding, and Thermal Stability of 1-Alkanethiols Self-Assembled on Halogenated Ge Surfaces
DOI:10.1021/la904864c JN:LANGMUIR PY:2010
TC:14 AU: Ardalan, Pendar;Sun, Yun;Pianetta, Piero;Musgrave, Charles B.;Bent, Stacey F.;
12:68:12 Electrostatic charging and manipulation of semiconductor nanowires
DOI:10.1557/jmr.2011.152 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:3 AU: Holmberg, Vincent C.;Patel, Reken N.;Korgel, Brian A.;
12:68:13 Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts
DOI:10.1016/j.apsusc.2014.07.012 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Girard, A.;Coulon, N.;Cardinaud, C.;Mohammed-Brahim, T.;Geneste, F.;
12:68:14 Disulfide Passivation of the Ge(100)-2 x 1 Surface
DOI:10.1021/la103614f JN:LANGMUIR PY:2011
TC:10 AU: Kachian, Jessica S.;Tannaci, John;Wright, Robert J.;Tilley, T. Don;Bent, Stacey F.;
12:68:15 Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor
DOI:10.1016/j.bios.2012.07.001 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:14 AU: Wenga, G.;Jacques, E.;Salauen, A-C.;Rogel, R.;Pichon, L.;Geneste, F.;
12:68:16 Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices
DOI:10.1039/c3tc30424h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Fleischmann, Claudia;Schouteden, Koen;Mueller, Matthias;Hoenicke, Philipp;Beckhoff, Burkhard;Sioncke, Sonja;Boyen, Hans-Gerd;Meuris, Marc;Van Haesendonck, Chris;Temst, Kristiaan;Vantomme, Andre;
12:68:17 XPS and SEM studies of oxide reduction of germanium nanowires
DOI:10.1016/j.jnoncrysol.2010.05.042 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:2 AU: Grossi, V.;Ottaviano, L.;Santucci, S.;Passacantando, M.;
12:69:1 Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy
DOI:10.1063/1.4898569 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Dinh, Duc V.;Oehler, F.;Zubialevich, V. Z.;Kappers, M. J.;Alam, S. N.;Caliebe, M.;Scholtz, F.;Humphreys, C. J.;Parbrook, P. J.;
12:69:2 Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.01.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Stellmach, J.;Mehnke, F.;Frentrup, M.;Reich, C.;Schlegel, J.;Pristovsek, M.;Wernicke, T.;Kneissl, M.;
12:69:3 Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.3682513 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:16 AU: Ploch, Simon;Wernicke, Tim;Dinh, Duc V.;Pristovsek, Markus;Kneissl, Michael;
12:69:4 MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
DOI:10.1016/j.jcrysgro.2012.06.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Stellmach, J.;Frentrup, M.;Mehnke, F.;Pristovsek, M.;Wernicke, T.;Kneissl, M.;
12:69:5 Growth and characterizations of semipolar (11(2)over-bar2) InN
DOI:10.1063/1.4733997 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Dinh, Duc V.;Skuridina, D.;Solopow, S.;Frentrup, M.;Pristovsek, M.;Vogt, P.;Kneissl, M.;Ivaldi, F.;Kret, S.;Szczepanska, A.;
12:69:6 MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55)
DOI:10.1016/j.jcrysgro.2014.11.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Hatui, Nirupam;Frentrup, Martin;Rahman, A. Azizur;Kadir, Abdul;Subramanian, Shruti;Kneissl, Michael;Bhattacharya, Arnab;
12:69:7 Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers
DOI:10.1063/1.3427310 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Das, A.;Magalhaes, S.;Kotsar, Y.;Kandaswamy, P. K.;Gayral, B.;Lorenz, K.;Alves, E.;Ruterana, P.;Monroy, E.;
12:69:8 Study of the epitaxial relationships between III-nitrides and M-plane sapphire
DOI:10.1063/1.3514095 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Vennegues, Philippe;Zhu, Tiankai;Martin, Denis;Grandjean, Nicolas;
12:69:9 Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content
DOI:10.1063/1.3525602 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Laskar, Masihhur R.;Ganguli, Tapas;Rahman, A. A.;Mukherjee, Amlan;Hatui, Nirupam;Gokhale, M. R.;Bhattacharya, Arnab;
12:69:10 Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy
DOI:10.1063/1.4828487 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Skuridina, D.;Dinh, D. V.;Lacroix, B.;Ruterana, P.;Hoffmann, M.;Sitar, Z.;Pristovsek, M.;Kneissl, M.;Vogt, P.;
12:69:11 Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.04.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:16 AU: Ploch, Simon;Frentrup, Martin;Wernicke, Tim;Pristovsek, Markus;Weyers, Markus;Kneissl, Michael;
12:69:12 Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.06.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Ploch, Simon;Park, Jae Bum;Stellmach, Joachim;Schwaner, Tilman;Frentrup, Martin;Niermann, Tore;Wernicke, Tim;Pristovsek, Markus;Lehmann, Michael;Kneissl, Michael;
12:69:13 Anisotropic structural and optical properties of a-plane, (11(2)over-bar0) AlInN nearly-lattice-matched to GaN
DOI:10.1063/1.3583457 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Laskar, Masihhur R.;Ganguli, Tapas;Rahman, A. A.;Arora, Ashish;Hatui, Nirupam;Gokhale, M. R.;Ghosh, Sandip;Bhattacharya, Arnab;
12:69:14 Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction
DOI:10.1063/1.4817422 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Oehler, F.;Vickers, M. E.;Kappers, M. J.;Oliver, R. A.;
12:69:15 Analysis of crystal orientation in AIN layers grown on m-plane sapphire
DOI:10.1016/j.jcrysgro.2014.04.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Mogilatenko, A.;Kirmse, H.;Stellmach, J.;Frentrup, M.;Mehnke, E.;Wernicke, T.;Kneissl, M.;Weyers, M.;
12:69:16 Self-regulated in-plane polarity of [1(1)over-bar00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrate
DOI:10.1063/1.4873545 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Lee, Hyemi;Jue, Miyeon;Yoon, Hansub;Lee, Sanghwa;Kim, Chinkyo;
12:69:17 Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
DOI:10.1063/1.4834521 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Frentrup, Martin;Hatui, Nirupam;Wernicke, Tim;Stellmach, Joachim;Bhattacharya, Arnab;Kneissl, Michael;
12:69:18 Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
DOI:10.1016/j.apsusc.2014.04.057 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Skuridina, D.;Dinh, D. V.;Pristovsek, M.;Lacroix, B.;Chauvat, M. -P.;Ruterana, P.;Kneissl, M.;Vogt, P.;
12:69:19 Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots
DOI:10.1016/j.jcrysgro.2010.10.130 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Das, A.;Sinha, P.;Kotsar, Y.;Kandaswamy, P. K.;Dimitrakopulos, G. P.;Kehagias, Th.;Komninou, Ph.;Nataf, G.;De Mierry, P.;Monroy, E.;
12:69:20 HVPE of AlxGa1-xN layers on planar and trench patterned sapphire
DOI:10.1016/j.jcrysgro.2012.05.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Hagedorn, S.;Richter, E.;Zeimer, U.;Prasai, D.;John, W.;Weyers, M.;
12:69:21 Single phase (11(2)over-bar2) AIN grown on (10(1)over-bar0) sapphire by metalorganic vapour phase epitaxy
DOI:10.1016/j.jcrysgro.2014.09.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Dinh, Duc V.;Conroy, M.;Zubialevich, V. Z.;Petkov, N.;Holmes, J. D.;Parbrook, P. J.;
12:69:22 Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
DOI:10.1007/s11664-013-2871-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Richter, E.;Fleischmann, S.;Goran, D.;Hagedorn, S.;John, W.;Mogilatenko, A.;Prasai, D.;Zeimer, U.;Weyers, M.;Traenkle, G.;
12:69:23 A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [1(1)over-bar0(3)over-bar]-oriented GaN films grown on m-plane sapphire substrates
DOI:10.1063/1.4867705 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Jue, Miyeon;Yoon, Hansub;Lee, Hyemi;Lee, Sanghwa;Kim, Chinkyo;
12:69:24 Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.04.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Dinh, Duc V.;Skuridina, D.;Solopow, S.;Pristovsek, M.;Vogt, P.;Kneissl, M.;
12:69:25 Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire
DOI:10.1016/j.javsgro.2014.10.01.0 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Fleischmann, Simon;Mogilatenko, Anna;Hagedorn, Sylvia;Richter, Eberhard;Goran, Daniel;Schaefer, Peter;Zeimer, Ute;Weyers, Markus;Traenkle, Guenther;
12:69:26 Adatom kinetics on nonpolar InN surfaces: Implications for one-dimensional nanostructures growth
DOI:10.1063/1.3658029 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Aliano, A.;Catellani, A.;Cicero, G.;
12:69:27 Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates
DOI:10.1063/1.3488022 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Seo, Yeonwoo;Kim, Chinkyo;
12:69:28 Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction (vol 114, 053520, 2013)
DOI:10.1063/1.4845955 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Oehler, F.;Vickers, M. E.;Kappers, M. J.;Oliver, R. A.;
12:69:29 Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
DOI:10.1063/1.4794098 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Mogilatenko, A.;Hagedorn, S.;Richter, E.;Zeimer, U.;Goran, D.;Weyers, M.;Traenkle, G.;
12:70:1 Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
DOI:10.1063/1.4773510 JN:APPLIED PHYSICS LETTERS PY:2012
TC:21 AU: Kaun, Stephen W.;Burke, Peter G.;Wong, Man Hoi;Kyle, Erin C. H.;Mishra, Umesh K.;Speck, James S.;
12:70:2 Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
DOI:10.1063/1.3665124 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:23 AU: Asgari, A.;Babanejad, S.;Faraone, L.;
12:70:3 Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
DOI:10.1063/1.3374331 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: Dasgupta, Sansaptak;Nidhi;Brown, David F.;Wu, Feng;Keller, Stacia;Speck, James S.;Mishra, Umesh K.;
12:70:4 Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
DOI:10.1063/1.4798249 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Mazumder, Baishakhi;Kaun, Stephen W.;Lu, Jing;Keller, Stacia;Mishra, Umesh K.;Speck, James S.;
12:70:5 Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
DOI:10.1016/j.jcrysgro.2015.02.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Hardy, M. T.;Storm, D. F.;Nepal, N.;Katzer, D. S.;Downey, B. P.;Meyer, D. J.;
12:70:6 Polarization-engineered removal of buffer leakage for GaN transistors
DOI:10.1063/1.3293454 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Cao, Yu;Zimmermann, Tom;Xing, Huili;Jena, Debdeep;
12:70:7 Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime
DOI:10.1063/1.4866435 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Ahmadi, Elaheh;Shivaraman, Ravi;Wu, Feng;Wienecke, Steven;Kaun, Stephen W.;Keller, Stacia;Speck, James S.;Mishra, Umesh K.;
12:70:8 Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment
DOI:10.1063/1.4896967 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Ahmadi, Elaheh;Chalabi, Hamidreza;Kaun, Stephen W.;Shivaraman, Ravi;Speck, James S.;Mishra, Umesh K.;
12:70:9 Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4730951 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kaun, Stephen W.;Wong, Man Hoi;Mishra, Umesh K.;Speck, James S.;
12:70:10 Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
DOI:10.1063/1.4809997 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lu, Jing;Denninghoff, Dan;Yeluri, Ramya;Lal, Shalini;Gupta, Geetak;Laurent, Matthew;Keller, Stacia;DenBaars, Steven P.;Mishra, Umesh K.;
12:70:11 Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors
DOI:10.1063/1.4867508 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Lu, Jing;Zheng, Xun;Guidry, Matthew;Denninghoff, Dan;Ahmadi, Elahe;Lal, Shalini;Keller, Stacia;DenBaars, Steven P.;Mishra, Umesh K.;
12:70:12 MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
DOI:10.1016/j.jcrysgro.2010.12.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Cao, Yu;Wang, Kejia;Li, Guowang;Kosel, Tom;Xing, Huili;Jena, Debdeep;
12:70:13 Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4725482 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Choi, Soojeong;Wu, Feng;Shivaraman, Ravi;Young, Erin C.;Speck, James S.;
12:70:14 Graphene-insulator-graphene active plasmonic terahertz devices
DOI:10.1063/1.4821221 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Sensale-Rodriguez, Berardi;
12:70:15 Electron microscopy investigations of purity of AlN interlayer in AlxGa1-xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4805027 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Rao, D. V. Sridhara;Jain, Anubha;Lamba, Sushil;Muraleedharan, K.;Muralidharan, R.;
12:70:16 Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling
DOI:10.1063/1.4732457 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Storm, D. F.;Katzer, D. S.;Meyer, D. J.;Binari, S. C.;
12:70:17 Atom probe tomography of AlInN/GaN HEMT structures
DOI:10.1116/1.4807321 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:3 AU: Dawahre, Nabil;Shen, Gang;Renfrow, Steven N.;Kim, Seongsin M.;Kung, Patrick;
12:70:18 Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
DOI:10.1063/1.4738768 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Faria, Faiza Afroz;Guo, Jia;Zhao, Pei;Li, Guowang;Kandaswamy, Prem Kumar;Wistey, Mark;Xing, Huili (Grace);Jena, Debdeep;
12:70:19 Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates (vol 108, 074502, 2010)
DOI:10.1063/1.3514587 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Kolluri, Seshadri;Keller, Stacia;Brown, David;Gupta, Geetak;Rajan, Siddharth;DenBaars, Steven P.;Mishra, Umesh;
12:70:20 Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
DOI:10.1016/j.jcrysgro.2013.05.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Storm, D. F.;Deen, D. A.;Katzer, D. S.;Meyer, D. J.;Binari, S. C.;Gougousi, T.;Paskova, T.;Preble, E. A.;Evans, K. R.;Smith, David J.;
12:70:21 Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN
DOI:10.1016/j.jcrysgro.2014.09.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Storm, D. F.;McConkie, T.;Katzer, D. S.;Downey, B. P.;Hardy, M. T.;Meyer, D. J.;Smith, David J.;
12:70:22 Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy
DOI:10.1116/1.3676175 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Storm, D. F.;Meyer, D. J.;Katzer, D. S.;Binari, S. C.;Paskova, Tanya;Preble, E. A.;Evans, K. R.;Zhou, Lin;Smith, David J.;
12:70:23 Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
DOI:10.1063/1.4895105 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Deen, David A.;Storm, David F.;Meyer, David J.;Bass, Robert;Binari, Steven C.;Gougousi, Theodosia;Evans, Keith R.;
12:70:24 Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
DOI:10.1063/1.4808260 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Lugani, Lorenzo;Carlin, Jean-Francois;Py, Marcel A.;Martin, Denis;Rossi, Francesca;Salviati, Giancarlo;Herfurth, Patrick;Kohn, Erhard;Blaesing, Juergen;Krost, Alois;Grandjean, Nicolas;
12:70:25 Interface roughness scattering in ultra-thin N-polar GaN quantum well channels
DOI:10.1063/1.4732795 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Singisetti, Uttam;Wong, Man Hoi;Mishra, Umesh K.;
12:70:26 Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer
DOI:10.1063/1.4896026 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bairamis, A.;Zervos, Ch.;Adikimenakis, A.;Kostopoulos, A.;Kayambaki, M.;Tsagaraki, K.;Konstantinidis, G.;Georgakilas, A.;
12:70:27 Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
DOI:10.1063/1.4875916 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Li, Guowang;Song, Bo;Ganguly, Satyaki;Zhu, Mingda;Wang, Ronghua;Yan, Xiaodong;Verma, Jai;Protasenko, Vladimir;Xing, Huili Grace;Jena, Debdeep;
12:70:28 Scattering due to large cluster embedded in quantum wells
DOI:10.1063/1.4782218 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Liu, Changbo;Zhao, Guijuan;Liu, Guipeng;Song, Yafeng;Zhang, Heng;Jin, Dongdong;Li, Zhiwei;Liu, Xianglin;Yang, Shaoyan;Zhu, Qinsheng;Wang, Zhanguo;
12:70:29 Effect of polarity on Ni/InN interfacial reactions
DOI:10.1063/1.4781768 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Kragh-Buetow, K. C.;Weng, X.;Readinger, E. D.;Wraback, M.;Mohney, S. E.;
12:70:30 Measurement of the hot electron mean free path and the momentum relaxation rate in GaN
DOI:10.1063/1.4905367 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Suntrup, Donald J., III;Gupta, Geetak;Li, Haoran;Keller, Stacia;Mishra, Umesh K.;
12:70:31 Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons
DOI:10.1063/1.4861902 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Abderrahmane, A.;Tashiro, T.;Takahashi, H.;Ko, P. J.;Okada, H.;Sato, S.;Ohshima, T.;Sandhu, A.;
12:70:32 MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate
DOI:10.1016/j.jcrysgro.2012.04.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Isobe, Yasuhiro;Ikki, Hiromichi;Sakakibara, Tatsuyuki;Iwaya, Motoaki;Takeuchi, Tetsuya;Kamiyama, Satoshi;Akasaki, Isamu;Sugiyama, Takayuki;Amano, Hiroshi;Imade, Mamoru;Mori, Yusuke;
12:70:33 Characterization of AlxInyGa1-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy
DOI:10.1016/j.mssp.2011.02.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:2 AU: Abid, M. A.;Abu Hassan, H.;Hassan, Z.;Ng, S. S.;Bakhori, S. K. Mohd;Abd Raof, N. H.;
12:71:1 Epitaxial growth of GaN films on unconventional oxide substrates
DOI:10.1039/c4tc01655f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Wang, Wenliang;Yang, Weijia;Wang, Haiyan;Li, Guoqiang;
12:71:2 Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates
DOI:10.1039/c3tc00916e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:19 AU: Wang, Wenliang;Yang, Hui;Li, Guoqiang;
12:71:3 Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
DOI:10.1116/1.4727967 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:34 AU: Browne, David A.;Young, Erin C.;Lang, Jordan R.;Hurni, Christophe A.;Speck, James S.;
12:71:4 Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates
DOI:10.1039/c3tc31935k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:10 AU: Yang, Weijia;Wang, Wenliang;Lin, Yunhao;Liu, Zuolian;Zhou, Shizhong;Qian, Huirong;Gao, Fangliang;Zhang, Shuguang;Li, Guoqiang;
12:71:5 Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
DOI:10.1016/j.actamat.2012.10.042 JN:ACTA MATERIALIA PY:2013
TC:35 AU: DenBaars, Steven P.;Feezell, Daniel;Kelchner, Katheryn;Pimputkar, Siddha;Pan, Chi-Chen;Yen, Chia-Chen;Tanaka, Shinichi;Zhao, Yuji;Pfaff, Nathan;Farrell, Robert;Iza, Mike;Keller, Stacia;Mishra, Umesh;Speck, James S.;Nakamura, Shuji;
12:71:6 Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates
DOI:10.1016/j.jallcom.2014.05.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Zhou, Shizhong;Lin, Zhiting;Wang, Haiyan;Qiao, Tian;Zhong, Liyi;Lin, Yunhao;Wang, Wenliang;Yang, Weijia;Li, Guoqiang;
12:71:7 A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers
DOI:10.1039/c4tc00192c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:9 AU: Wang, Wenliang;Lin, Yunhao;Yang, Weijia;Liu, Zuolian;Zhiou, Shizhong;Qian, Huirong;Gao, Fangliang;Wen, Lei;Li, Guoqiang;
12:71:8 Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates
DOI:10.1016/j.matlet.2014.04.100 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Wang, Wenliang;Liu, Zuolian;Yang, Weijia;Lin, Yunhao;Zhou, Shizhong;Qian, Huirong;Li, Guoqiang;
12:71:9 Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
DOI:10.1063/1.4720507 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Song, Keun-Man;Kim, Jong-Min;Kang, Bong-Kyun;Yoon, Dae-Ho;Kang, S.;Lee, Sang-Won;Lee, Sung-Nam;
12:71:10 Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition
DOI:10.1007/s10853-014-8064-z JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:7 AU: Wang, Wenliang;Yang, Weijia;Liu, Zuolian;Lin, Yunhao;Zhou, Shizhong;Qian, Huiromg;Gao, Fangliang;Wen, Lei;Zhang, Shugang;Li, Guoqiang;
12:71:11 Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (111) substrates
DOI:10.1016/j.apsusc.2013.12.179 JN:APPLIED SURFACE SCIENCE PY:2014
TC:11 AU: Wang, Wenliang;Yang, Weijia;Liu, Zuolian;Lin, Yunhao;Zhou, Shizhong;Qian, Huirong;Gao, Fangliang;Yang, Hui;Li, Guoqiang;
12:71:12 Cathodoluminescence and field emission from GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: substrate-orientation dependence
DOI:10.1039/c2tc00012a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:1 AU: He, Gang;Chikyow, Toyohiro;Chen, Xiaoshuang;Chen, Hanshuang;Liu, Jiangwei;Sun, Zhaoqi;
12:71:13 Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes
DOI:10.1063/1.4729414 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Chen, Tufu;Wang, Yunqian;Xiang, Peng;Luo, Ruihong;Liu, Minggang;Yang, Weimin;Ren, Yuan;He, Zhiyuan;Yang, Yibin;Chen, Weijie;Zhang, Xiaorong;Wu, Zhisheng;Liu, Yang;Zhang, Baijun;
12:71:14 Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence
DOI:10.1063/1.3606430 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: He, G.;Chichibu, Shigefusa F.;Chikyow, T.;
12:71:15 MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on gamma-LiAlO2 substrates
DOI:10.1016/j.jcrysgro.2009.10.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Hang, D. R.;Chou, Mitch M. C.;Mauder, C.;Heuken, M.;
12:71:16 Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) beta-LiGaO2 substrate by chemical vapor deposition
DOI:10.1016/j.tsf.2011.01.129 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Chou, Mitch M. C.;Chen, Chenlong;Hang, D. R.;Yang, Wen-Ting;
12:71:17 Interface chemistry and electronic structure of GaN/MgAl2O4 revealed by angle-resolved photoemission spectroscopy
DOI:10.1063/1.3505153 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: He, G.;Chikyow, T.;Chichibu, Shigefusa F.;
12:71:18 Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate
DOI:10.1063/1.4757996 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Sheu, Jinn-Kong;Tu, Shang-Ju;Yeh, Yu-Hsiang;Lee, Ming-Lun;Lai, Wei-Chih;
12:71:19 Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
DOI:10.1063/1.3374686 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Tao, Y. B.;Chen, Z. Z.;Zhang, F. F.;Jia, C. Y.;Qi, S. L.;Yu, T. J.;Kang, X. N.;Yang, Z. J.;You, L. P.;Yu, D. P.;Zhang, G. Y.;
12:71:20 Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
DOI:10.1016/j.jcrysgro.2010.10.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Tao, Y. B.;Chen, Z. Z.;Yu, T. J.;Yin, Y.;Kang, X. N.;Yang, Z. J.;Ran, G. Z.;Zhang, G. Y.;
12:71:21 High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering
DOI:10.1016/j.tsf.2013.03.063 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Hwang, Dae-Kue;Kim, Kang-Pil;Kim, Dae-Hwan;
12:71:22 Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals
DOI:10.1063/1.4892349 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Perret, Edith;Highland, M. J.;Stephenson, G. B.;Streiffer, S. K.;Zapol, P.;Fuoss, P. H.;Munkholm, A.;Thompson, Carol;
12:71:23 InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
DOI:10.1063/1.3653834 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Lee, K. H.;Chang, P. C.;Chang, S. J.;Wu, S. L.;
12:71:24 Epitaxial growth of GaN films on unconventional oxide substrates (vol 2, pg 9342, 2014)
DOI:10.1039/c4tc90149e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Wang, Wenliang;Yang, Weijia;Wang, Haiyan;Li, Guoqiang;
12:72:1 Polarization-engineered GaN/InGaN/GaN tunnel diodes
DOI:10.1063/1.3517481 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Krishnamoorthy, Sriram;Nath, Digbijoy N.;Akyol, Fatih;Park, Pil Sung;Esposto, Michele;Rajan, Siddharth;
12:72:2 Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop
DOI:10.1063/1.4819737 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Akyol, Fatih;Krishnamoorthy, Sriram;Rajan, Siddharth;
12:72:3 InGaN/GaN light-emitting diode with a polarization tunnel junction
DOI:10.1063/1.4806978 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Zhang, Zi-Hui;Tan, Swee Tiam;Kyaw, Zabu;Ji, Yun;Liu, Wei;Ju, Zhengang;Hasanov, Namig;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:72:4 Low resistance GaN/InGaN/GaN tunnel junctions
DOI:10.1063/1.4796041 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Krishnamoorthy, Sriram;Akyol, Fatih;Park, Pil Sung;Rajan, Siddharth;
12:72:5 Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate
DOI:10.1063/1.4864300 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, Kexiong;Liang, Hongwei;Shen, Rensheng;Wang, Dongsheng;Tao, Pengcheng;Liu, Yang;Xia, Xiaochuan;Luo, Yingmin;Du, Guotong;
12:72:6 InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
DOI:10.1063/1.4897342 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Krishnamoorthy, Sriram;Akyol, Fatih;Rajan, Siddharth;
12:72:7 Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1-xN
DOI:10.1116/1.3562277 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:19 AU: Nath, Digbijoy N.;Guer, Emre;Ringel, Steven A.;Rajan, Siddharth;
12:72:8 Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach
DOI:10.1103/PhysRevB.89.085307 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Duff, Andrew Ian;Lymperakis, Liverios;Neugebauer, Joerg;
12:72:9 Molecular beam epitaxy of N-polar InGaN
DOI:10.1063/1.3478226 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Nath, Digbijoy N.;Gur, Emre;Ringel, Steven A.;Rajan, Siddharth;
12:72:10 Demonstration of forward inter-band tunneling in GaN by polarization engineering
DOI:10.1063/1.3666862 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Krishnamoorthy, Sriram;Park, Pil Sung;Rajan, Siddharth;
12:72:11 N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping
DOI:10.1063/1.3656707 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Verma, Jai;Simon, John;Protasenko, Vladimir;Kosel, Thomas;Xing, Huili Grace;Jena, Debdeep;
12:72:12 High efficient GaN-based laser diodes with tunnel junction
DOI:10.1063/1.4816598 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Feng, M. X.;Liu, J. P.;Zhang, S. M.;Jiang, D. S.;Li, Z. C.;Zhou, K.;Li, D. Y.;Zhang, L. Q.;Wang, F.;Wang, H.;Chen, P.;Liu, Z. S.;Zhao, D. G.;Sun, Q.;Yang, H.;
12:72:13 Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges
DOI:10.1103/PhysRevB.81.035303 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Schubert, Martin F.;
12:72:14 Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions
DOI:10.1063/1.3633347 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Fung, Wayne Y.;Chen, Lin;Lu, Wei;
12:72:15 Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies
DOI:10.1063/1.3631678 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Gur, Emre;Zhang, Zeng;Krishnamoorty, Sriram;Rajan, S.;Ringel, S. A.;
12:72:16 GdN Nanoisland-Based GaN Tunnel Junctions
DOI:10.1021/nl4006723 JN:NANO LETTERS PY:2013
TC:13 AU: Krishnamoorthy, Sriram;Kent, Thomas F.;Yang, Jing;Park, Pil Sung;Myers, Roberto C.;Rajan, Siddharth;
12:72:17 Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies (vol 99, 092109, 2011)
DOI:10.1063/1.3666222 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Gur, Emre;Zhang, Zeng;Krishnamoorthy, Sriram;Rajan, S.;Ringel, S. A.;
12:72:18 Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes
DOI:10.1063/1.3583673 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Zhu, Kaigui;Wang, Wu;Shao, Qingyi;Zhao, Dongning;Lu, Yongfeng;Ianno, Natale;
12:72:19 Saturation of the junction voltage in GaN-based laser diodes
DOI:10.1063/1.4804384 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Feng, M. X.;Liu, J. P.;Zhang, S. M.;Liu, Z. S.;Jiang, D. S.;Li, Z. C.;Wang, F.;Li, D. Y.;Zhang, L. Q.;Wang, H.;Yang, H.;
12:72:20 Thermal characterization of GaN-based laser diodes by forward-voltage method
DOI:10.1063/1.4716003 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Feng, M. X.;Zhang, S. M.;Jiang, D. S.;Liu, J. P.;Wang, H.;Zeng, C.;Li, Z. C.;Wang, H. B.;Wang, F.;Yang, H.;
12:72:21 Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures
DOI:10.1007/s11664-010-1453-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:3 AU: Armstrong, A.;Crawford, M. H.;Koleske, D. D.;
12:72:22 InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)
DOI:10.1007/s11664-012-1977-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:5 AU: Lal, Shalini;Snow, Eric;Lu, Jing;Swenson, Brian;Keller, Stacia;Denbaars, Steven P.;Mishra, Umesh K.;
12:73:1 Semiconductor Nanowire Fabrication by Bottom-Up and Top-Down Paradigms
DOI:10.1021/cm300570n JN:CHEMISTRY OF MATERIALS PY:2012
TC:55 AU: Hobbs, Richard G.;Petkov, Nikolay;Holmes, Justin D.;
12:73:2 Quantum Confinement Induced Performance Enhancement in Sub-5-nm Lithographic Si Nanowire Transistors
DOI:10.1021/nl103278a JN:NANO LETTERS PY:2011
TC:46 AU: Trivedi, Krutarth;Yuk, Hyungsang;Floresca, Herman Carlo;Kim, Moon J.;Hu, Walter;
12:73:3 Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars
DOI:10.1021/nl102140k JN:NANO LETTERS PY:2010
TC:33 AU: Walavalkar, Sameer S.;Hofmann, Carrie E.;Homyk, Andrew P.;Henry, M. David;Atwater, Harry A.;Scherer, Axel;
12:73:4 Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns
DOI:10.1088/0957-4484/25/28/285301 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Liu, Zuwei;Gu, Xiaodan;Hwu, Justin;Sassolini, Simone;Olynick, Deirdre L.;
12:73:5 Roughness of silicon nanowire sidewalls and room temperature photoluminescence
DOI:10.1103/PhysRevB.82.125446 JN:PHYSICAL REVIEW B PY:2010
TC:28 AU: Sivakov, Vladimir A.;Voigt, Felix;Berger, Andreas;Bauer, Gottfried;Christiansen, Silke H.;
12:73:6 A coaxial structure of multiwall carbon nanotubes on vertically aligned Si nanorods and its intrinsic characteristics
DOI:10.1039/c4tc01251h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Kim, Sungwon;Kim, Junhee;Lim, Jeongmin;Lee, Hyunju;Jun, Yongseok;Kim, Donghwan;
12:73:7 Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2 nanowires
DOI:10.1103/PhysRevB.83.245443 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Demichel, O.;Calvo, V.;Noe, P.;Salem, B.;Fazzini, P. -F.;Pauc, N.;Oehler, F.;Gentile, P.;Magnea, N.;
12:73:8 Thermal characterization of vertical silicon nanowires
DOI:10.1557/jmr.2011.60 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:9 AU: Stranz, Andrej;Waag, Andreas;Peiner, Erwin;
12:73:9 Coulomb blockade in vertical, bandgap engineered silicon nanopillars
DOI:10.1063/1.4799059 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Walavalkar, Sameer;Latawiec, Pawel;Scherer, Axel;
12:73:10 Photoluminescence of silicon nanostructures prepared via hydrothermal growth progress
DOI:10.1016/j.apsusc.2012.04.175 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Sun Congli;Hu Hao;Yi Liang;Bai Xue;Yang Yumeng;Feng Huanhuan;Xu Jingjing;Chen Yu;Jin Yong;Jiao Zhifeng;Sun Xiaosong;
12:73:11 Thermal annealing dependence of some optical properties of plasma-modified porous silicon
DOI:10.1016/j.apsusc.2010.08.027 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Benyahia, Be.;Gabouze, N.;Guerbous, L.;Mahmoudi, Br.;Menari, H.;
12:73:12 Subeutectic Synthesis of Epitaxial Si-NWs with Diverse Catalysts Using a Novel Si Precursor
DOI:10.1021/nl101744q JN:NANO LETTERS PY:2010
TC:11 AU: Molnar, W.;Lugstein, A.;Pongratz, P.;Auner, N.;Bauch, C.;Bertagnolli, E.;
12:73:13 A General Approach toward Shape-Controlled Synthesis of Silicon Nanowires
DOI:10.1021/nl303152b JN:NANO LETTERS PY:2013
TC:1 AU: Molnar, W.;Lugstein, A.;Pongratz, P.;Seyring, M.;Rettenmayr, M.;Borschel, C.;Ronning, C.;Auner, N.;Bauch, C.;Bertagnolli, E.;
12:73:14 Photoconductive response of strained silicon nanowires: A Monte Carlo study
DOI:10.1063/1.4870466 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shiri, Daryoush;Verma, Amit;Khader, Mahmoud M.;
12:73:15 Coexistence of 1D and Quasi-0D Photoluminescence from Single Silicon Nanowires
DOI:10.1021/nl2016109 JN:NANO LETTERS PY:2011
TC:14 AU: Valenta, Jan;Bruhn, Benjamin;Linnros, Jan;
12:74:1 Polarization doping and the efficiency of III-nitride optoelectronic devices
DOI:10.1063/1.4833155 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kivisaari, Pyry;Oksanen, Jani;Tulkki, Jukka;
12:74:2 Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
DOI:10.1063/1.3478556 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Zhang, L.;Ding, K.;Yan, J. C.;Wang, J. X.;Zeng, Y. P.;Wei, T. B.;Li, Y. Y.;Sun, B. J.;Duan, R. F.;Li, J. M.;
12:74:3 Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
DOI:10.1063/1.4753993 JN:APPLIED PHYSICS LETTERS PY:2012
TC:27 AU: Li, Shibin;Ware, Morgan;Wu, Jiang;Minor, Paul;Wang, Zhiming;Wu, Zhiming;Jiang, Yadong;Salamo, Gregory J.;
12:74:4 Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions
DOI:10.1088/0957-4484/25/45/455201 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Kent, Thomas F.;Carnevale, Santino D.;Sarwar, A. T. M.;Phillips, Patrick J.;Klie, Robert F.;Myers, Roberto C.;
12:74:5 Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
DOI:10.1063/1.4885421 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Zhang, Zi-Hui;Liu, Wei;Ju, Zhengang;Tan, Swee Tiam;Ji, Yun;Zhang, Xueliang;Wang, Liancheng;Kyaw, Zabu;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:74:6 Polarization induced hole doping in graded AlxGa1-xN (x=0.7 similar to 1) layer grown by molecular beam epitaxy
DOI:10.1063/1.4792685 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Li, Shibin;Zhang, Ting;Wu, Jiang;Yang, Yajie;Wang, Zhiming;Wu, Zhiming;Chen, Zhi;Jiang, Yadong;
12:74:7 Theoretical study of polarization-doped GaN-based light-emitting diodes
DOI:10.1063/1.3565173 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Zhang, L.;Ding, K.;Liu, N. X.;Wei, T. B.;Ji, X. L.;Ma, P.;Yan, J. C.;Wang, J. X.;Zeng, Y. P.;Li, J. M.;
12:74:8 Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction
DOI:10.1063/1.4904083 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kuchuk, A. V.;Stanchu, H. V.;Li, Chen;Ware, M. E.;Mazur, Yu. I.;Kladko, V. P.;Belyaev, A. E.;Salamo, G. J.;
12:74:9 Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
DOI:10.1063/1.3601469 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Zhang, L.;Wei, X. C.;Liu, N. X.;Lu, H. X.;Zeng, J. P.;Wang, J. X.;Zeng, Y. P.;Li, J. M.;
12:74:10 Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
DOI:10.1063/1.4862064 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Verma, Jai;Islam, S. M.;Protasenko, Vladimir;Kandaswamy, Prem Kumar;Xing, Huili (Grace);Jena, Debdeep;
12:74:11 Effects of lateral current injection in GaN multi-quantum well light-emitting diodes
DOI:10.1063/1.4720584 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Kivisaari, Pyry;Oksanen, Jani;Tulkki, Jukka;
12:74:12 p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
DOI:10.1063/1.4858386 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Zhang, Zi-Hui;Tan, Swee Tiam;Kyaw, Zabu;Liu, Wei;Ji, Yun;Ju, Zhengang;Zhang, Xueliang;Sun, Xiao Wei;Demir, Hilmi Volkan;
12:74:13 Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
DOI:10.1063/1.4750039 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Li, Shibin;Ware, Morgan E.;Wu, Jiang;Kunets, Vasyl P.;Hawkridge, Mike;Minor, Paul;Wang, Zhiming;Wu, Zhiming;Jiang, Yadong;Salamo, Gregory J.;
12:74:14 Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy
DOI:10.1116/1.4796107 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:7 AU: Sun, Haiding;Woodward, Jeff;Yin, Jian;Moldawer, Adam;Pecora, Emanuele F.;Nikiforov, Alexey Yu.;Dal Negro, Luca;Paiella, Roberto;Ludwig, Karl, Jr.;Smith, David J.;Moustakas, Theodore D.;
12:74:15 Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes
DOI:10.1007/s00339-009-5485-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:10 AU: Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang;
12:74:16 On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
DOI:10.1063/1.3694054 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Ju, Z. G.;Tan, S. T.;Zhang, Z-H;Ji, Y.;Kyaw, Z.;Dikme, Y.;Sun, X. W.;Demir, H. V.;
12:74:17 Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination
DOI:10.1063/1.4813220 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Desrat, W.;Contreras, S.;Konczewicz, L.;Jouault, B.;Chmielowska, M.;Chenot, S.;Cordier, Y.;
12:74:18 Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency
DOI:10.1063/1.3583448 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Armstrong, A.;Allerman, A. A.;Henry, T. A.;Crawford, M. H.;
12:74:19 Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
DOI:10.1063/1.4789512 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Verma, Jai;Kandaswamy, Prem Kumar;Protasenko, Vladimir;Verma, Amit;Xing, Huili Grace;Jena, Debdeep;
12:74:20 The influence of Al composition on point defect incorporation in AlGaN
DOI:10.1063/1.3679681 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Henry, T. A.;Armstrong, A.;Allerman, A. A.;Crawford, M. H.;
12:74:21 Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.02.094 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Fan, W. C.;Huang, S. H.;Chou, W. C.;Tsou, M. H.;Yang, C. S.;Chia, C. H.;Nguyen Dang Phu;Luc Huy Hoang;
12:74:22 Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN (vol 101, 122103, 2012)
DOI:10.1063/1.4794848 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Li, Shibin;Ware, Morgan;Wu, Jiang;Minor, Paul;Wang, Zhiming;Wu, Zhiming;Jiang, Yadong;Salamo, Gregory J.;
12:75:1 Bulk transport measurements in ZnO: The effect of surface electron layers
DOI:10.1103/PhysRevB.81.075211 JN:PHYSICAL REVIEW B PY:2010
TC:44 AU: Allen, M. W.;Swartz, C. H.;Myers, T. H.;Veal, T. D.;McConville, C. F.;Durbin, S. M.;
12:75:2 Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{10(1)over-bar1} and GaN{20(2)over-bar1} surfaces
DOI:10.1063/1.4894708 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Romanyuk, O.;Jiricek, P.;Paskova, T.;Bartos, I.;
12:75:3 Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
DOI:10.1063/1.3562308 JN:APPLIED PHYSICS LETTERS PY:2011
TC:24 AU: Allen, M. W.;Zemlyanov, D. Y.;Waterhouse, G. I. N.;Metson, J. B.;Veal, T. D.;McConville, C. F.;Durbin, S. M.;
12:75:4 Polarity-dependent photoemission spectra of wurtzite-type zinc oxide
DOI:10.1063/1.3673553 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Williams, Jesse;Yoshikawa, Hideki;Ueda, Shigenori;Yamashita, Yoshiyuki;Kobayashi, Keisuke;Adachi, Yutaka;Haneda, Hajime;Ohgaki, Takeshi;Miyazaki, Hiroki;Ishigaki, Takamasa;Ohashi, Naoki;
12:75:5 Surface state modulation through wet chemical treatment as a route to controlling the electrical properties of ZnO nanowire arrays investigated with XPS
DOI:10.1016/j.apsusc.2014.09.078 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Lord, Alex M.;Maffeis, Thierry G.;Allen, Martin W.;Morgan, David;Davies, Philip R.;Jones, Daniel R.;Evans, Jonathan E.;Smith, Nathan A.;Wilks, Steve P.;
12:75:6 An aqueous solution process and subsequent UV treatment for highly transparent conductive ZnO films
DOI:10.1039/c2jm33584k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Wagata, Hajime;Ohashi, Naoki;Katsumata, Ken-ichi;Segawa, Hiroyo;Wada, Yoshiki;Yoshikawa, Hideki;Ueda, Shigenori;Okada, Kiyoshi;Matsushita, Nobuhiro;
12:75:7 Direct evidence of metallicity at ZnO (000(1)over-bar)-(1x1) surfaces from angle-resolved photoemission spectroscopy
DOI:10.1103/PhysRevB.81.233305 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Piper, L. F. J.;Preston, A. R. H.;Fedorov, A.;Cho, S. W.;DeMasi, A.;Smith, K. E.;
12:75:8 Observation and simulation of hard x ray photoelectron diffraction to determine polarity of polycrystalline zinc oxide films with rotation domains
DOI:10.1063/1.3682088 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Williams, Jesse R.;Pis, Igor;Kobata, Masaaki;Winkelmann, Aimo;Matsushita, Tomohiro;Adachi, Yutaka;Ohashi, Naoki;Kobayashi, Keisuke;
12:75:9 Photoelectron spectroscopic study on band alignment of poly(3-hexylthiophene-2,5-diyl)/polar-ZnO heterointerface
DOI:10.1016/j.tsf.2013.08.018 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Nagata, Takahiro;Oh, Seungjun;Yamashita, Yoshiyuki;Yoshikawa, Hideki;Ikeno, Norihiro;Kobayashi, Keisuke;Chikyow, Toyohiro;Wakayama, Yutaka;
12:75:10 Polarity effects in the optical properties of hydrothermal ZnO
DOI:10.1063/1.4837219 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Allen, M. W.;Heinhold, R.;Miller, P.;Henseler, M. J. H.;Mendelsberg, R. J.;Durbin, S. M.;Reeves, R. J.;
12:75:11 Polarity-dependent photoemission of in situ cleaved zinc oxide single crystals
DOI:10.1557/jmr.2012.181 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Heinhold, Robert;Allen, Martin Ward;
12:75:12 Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition
DOI:10.1016/j.tsf.2011.02.087 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Adachi, Yutaka;Ohashi, Naoki;Ohgaki, Takeshi;Ohnishi, Tsuyoshi;Sakaguchi, Isao;Ueda, Shigenori;Yoshikawa, Hideki;Kobayashi, Keisuke;Williams, Jesse R.;Ogino, Tsuyoshi;Haneda, Hajime;
12:75:13 GaN polarity determination by photoelectron diffraction
DOI:10.1063/1.4819761 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Romanyuk, O.;Jiricek, P.;Paskova, T.;Bieloshapka, I.;Bartos, I.;
12:75:14 Effect of crystalline polarity on microstructure and optoelectronic properties of gallium-doped zinc oxide films deposited onto glass substrates
DOI:10.1016/j.tsf.2013.12.017 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Ogino, Tsuyoshi;Williams, Jesse R.;Watanabe, Ken;Sakaguchi, Isao;Hishita, Shunichi;Haneda, Hajime;Adachi, Yutaka;Ohgaki, Takeshi;Ohashi, Naoki;
12:75:15 Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2013.11.065 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Nakamura, T.;Yoshimura, T.;Ashida, A.;Fujimura, N.;
12:75:16 Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition
DOI:10.1063/1.3604796 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Krajewski, Tomasz A.;Luka, Grzegorz;Gieraltowska, Sylwia;Zakrzewski, Adam J.;Smertenko, Petro S.;Kruszewski, Piotr;Wachnicki, Lukasz;Witkowski, Bartlomiej S.;Lusakowska, Elzbieta;Jakiela, Rafal;Godlewski, Marek;Guziewicz, Elzbieta;
12:75:17 Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
DOI:10.1063/1.4789373 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Yang, A. L.;Yamashita, Y.;Kobata, M.;Matsushita, T.;Yoshikawa, H.;Pis, I.;Imura, M.;Yamaguchi, T.;Sakata, O.;Nanishi, Y.;Kobayashi, K.;
12:75:18 Interface formation between tris(8-hydroxyquinoline) aluminum and ZnO nanowires and film
DOI:10.1063/1.3531812 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Lee, Jung Han;Shin, Jeong Ho;Song, Jae Yong;Yi, Yeonjin;
12:75:19 Polarity control of intrinsic ZnO films using substrate bias
DOI:10.1063/1.4816509 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Williams, Jesse R.;Furukawa, Hirokazu;Adachi, Yutaka;Grachev, Sergey;Sondergard, Elin;Ohashi, Naoki;
12:75:20 Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition
DOI:10.1116/1.3425640 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:7 AU: Sivakumar, Kousik;Rossnagel, S. M.;
12:75:21 Polarity of wurtzite crystals by photoelectron diffraction
DOI:10.1016/j.apsusc.2014.01.038 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Bartos, I.;Romanyuk, O.;
12:75:22 Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface
DOI:10.1063/1.4768908 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Nagata, Takahiro;Yamashita, Yoshiyuki;Yoshikawa, Hideki;Uehara, Tsuyoshi;Haemori, Masamitsu;Kobayashi, Keisuke;Chikyow, Toyohiro;
12:75:23 Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(1(1)over-bar00) surfaces
DOI:10.1116/1.3456166 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Eisele, H.;Borisova, S.;Ivanova, L.;Daehne, M.;Ebert, Ph;
12:75:24 3D Atomic Imaging by Internal-Detector Electron Holography
DOI:10.1103/PhysRevLett.107.045502 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:10 AU: Uesaka, Akio;Hayashi, Kouichi;Matsushita, Tomohiro;Arai, Shigetoshi;
12:75:25 Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering
DOI:10.1016/j.mseb.2012.08.026 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:2 AU: Shantheyanda, Bojanna P.;Sundaram, Kalpathy B.;Shiradkar, Narendra S.;
12:75:26 Direct extraction of quantitative structural information from x-ray fluorescence holograms using spherical-harmonic analysis
DOI:10.1103/PhysRevB.85.220102 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Wang, Yuhao;Bai, Jianming;Tyson, Trevor A.;
12:75:27 Growth temperature dependence of the background doping in MOVPE-grown InAs
DOI:10.1016/j.jcrysgro.2011.09.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Wagener, M. C.;Wagener, V.;Botha, J. R.;
12:75:28 Polarity Determination of Polarity-Controlled ZnO Films Using Photoresponse Characteristics
DOI:10.1007/s11664-012-2427-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Park, Jinsub;Yao, Takafumi;
12:75:29 Introduction
DOI:10.1557/jmr.2012.263 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:0 AU: Durbin, Steve;Veal, Tim;Grundmann, Marius;Phillips, Jamie;
12:76:1 Nanowire-Based Sensors
DOI:10.1002/smll.201000972 JN:SMALL PY:2010
TC:132 AU: Ramgir, Niranjan S.;Yang, Yang;Zacharias, Margit;
12:76:2 Temperature-dependent electron mobility in InAs nanowires
DOI:10.1088/0957-4484/24/22/225202 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Gupta, Nupur;Song, Yipu;Holloway, Gregory W.;Sinha, Urbasi;Haapamaki, Chris M.;LaPierre, Ray R.;Baugh, Jonathan;
12:76:3 Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
DOI:10.1021/nl300015w JN:NANO LETTERS PY:2012
TC:19 AU: Sun, M. H.;Joyce, H. J.;Gao, Q.;Tan, H. H.;Jagadish, C.;Ning, C. Z.;
12:76:4 Evidence for nonlinear screening and enhancement of scattering by a single Coulomb impurity for dielectrically confined electrons in InAs nanowires
DOI:10.1103/PhysRevB.85.235316 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Salfi, J.;Nair, S. V.;Savelyev, I. G.;Blumin, M.;Ruda, H. E.;
12:76:5 Facilitating growth of InAs-InP core-shell nanowires through the introduction of Al
DOI:10.1016/j.jcrysgro.2012.02.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Haapamaki, C. M.;Baugh, J.;LaPierre, R. R.;
12:76:6 Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates
DOI:10.1088/0957-4484/21/33/335705 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Sun, M. H.;Leong, E. S. P.;Chin, A. H.;Ning, C. Z.;Cirlin, G. E.;Samsonenko, Yu B.;Dubrovskii, V. G.;Chuang, L.;Chang-Hasnain, C.;
12:76:7 On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires
DOI:10.1063/1.4748099 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Cuscuna, Massimo;Convertino, Annalisa;Zampetti, Emiliano;Macagnano, Antonella;Pecora, Alessandro;Fortunato, Guglielmo;Felisari, Laura;Nicotra, Giuseppe;Spinella, Corrado;Martelli, Faustino;
12:76:8 Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals
DOI:10.1021/nn1033967 JN:ACS NANO PY:2011
TC:10 AU: Salfi, Joe;Paradiso, Nicola;Roddaro, Stefano;Heun, Stefan;Nair, Selvakumar V.;Savelyev, Igor G.;Blumin, Marina;Beltram, Fabio;Ruda, Harry E.;
12:76:9 Trapped charge dynamics in InAs nanowires
DOI:10.1063/1.4773820 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Holloway, Gregory W.;Song, Yipu;Haapamaki, Chris M.;LaPierre, Ray R.;Baugh, Jonathan;
12:76:10 Contacts shielding in nanowire field effect transistors
DOI:10.1063/1.3693027 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Pitanti, Alessandro;Roddaro, Stefano;Vitiello, Miriam S.;Tredicucci, Alessandro;
12:76:11 Electron transport in InAs-InAlAs core-shell nanowires
DOI:10.1063/1.4788742 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Holloway, Gregory W.;Song, Yipu;Haapamaki, Chris M.;LaPierre, Ray R.;Baugh, Jonathan;
12:76:12 Fabrication of Periodic Metal Nanowires with Microscale Mold by Nanoimprint Lithography
DOI:10.1021/am2010338 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:6 AU: Shi, Shoulei;Lu, Nan;Lu, Yongchun;Wang, Yandong;Qi, Dianpeng;Xu, Hongbo;Chi, Lifeng;
12:76:13 Parylene-C passivated carbon nanotube flexible transistors
DOI:10.1063/1.3499758 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Selvarasah, Selvapraba;Li, Xinghui;Busnaina, Ahmed;Dokmeci, Mehmet R.;
12:76:14 Fabrication of free-standing copper foils covered with highly-ordered copper nanowire arrays
DOI:10.1016/j.apsusc.2012.04.148 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Zaraska, Leszek;Sulka, Grzegorz D.;Jaskula, Marian;
12:76:15 Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination
DOI:10.1007/s11664-011-1867-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Huang, C. -C.;Mason, A. D.;Conley, J. F., Jr.;Heist, C.;Koesdjojo, M. T.;Remcho, V. T.;Afentakis, T.;
12:76:16 Large defect-induced sub-bandgap photoresponse in semiconductor nanowires via waveguiding excitation
DOI:10.1088/0957-4484/22/42/425201 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Gu, Fuxing;Zhang, Lei;Yu, Huakang;Fang, Wei;Bao, Jiming;Tong, Limin;
12:76:17 Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas
DOI:10.1103/PhysRevB.84.085422 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Konar, Aniruddha;Fang, Tian;Jena, Debdeep;
12:77:1 Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires
DOI:10.1021/nl3022434 JN:NANO LETTERS PY:2013
TC:13 AU: Dayeh, Shadi A.;Tang, Wei;Boioli, Francesca;Kavanagh, Karen L.;Zheng, He;Wang, Jian;Mack, Nathan H.;Swadener, Greg;Huang, Jian Yu;Miglio, Leo;Tu, King-Ning;Picraux, S. Tom;
12:77:2 Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells
DOI:10.1063/1.4799065 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Salehzadeh, O.;Kavanagh, K. L.;Watkins, S. P.;
12:77:3 Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires
DOI:10.1063/1.3579251 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Kavanagh, Karen L.;Salfi, Joe;Savelyev, Igor;Blumin, Marina;Ruda, Harry E.;
12:77:4 Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure
DOI:10.1021/nl303702w JN:NANO LETTERS PY:2013
TC:8 AU: Cao, Y. Y.;Ouyang, G.;Wang, C. X.;Yang, G. W.;
12:77:5 Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires
DOI:10.1063/1.4704927 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Perillat-Merceroz, G.;Thierry, R.;Jouneau, P. -H.;Ferret, P.;Feuillet, G.;
12:77:6 Axial strain in GaAs/InAs core-shell nanowires
DOI:10.1063/1.4790185 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Biermanns, Andreas;Rieger, Torsten;Bussone, Genziana;Pietsch, Ullrich;Gruetzmacher, Detlev;Lepsa, Mihail Ion;
12:77:7 Critical shell thickness for InAs-AlxIn1-xAs(P) core-shell nanowires
DOI:10.1063/1.4769735 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Haapamaki, C. M.;Baugh, J.;LaPierre, R. R.;
12:77:8 Enhanced InAs nanopillar electrical transport by in-situ passivation
DOI:10.1063/1.4791592 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Lin, A.;Shapiro, J. N.;Scofield, A. C.;Liang, B. L.;Huffaker, D. L.;
12:77:9 Faster radial strain relaxation in InAs-GaAs core-shell heterowires
DOI:10.1063/1.3684964 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:17 AU: Kavanagh, Karen L.;Saveliev, Igor;Blumin, Marina;Swadener, Greg;Ruda, Harry E.;
12:77:10 Plastic and Elastic Strain Fields in GaAs/Si Core-Shell Nanowires
DOI:10.1021/nl4046312 JN:NANO LETTERS PY:2014
TC:4 AU: Conesa-Boj, Sonia;Boioli, Francesca;Russo-Averchi, Eleonora;Dunand, Sylvain;Heiss, Martin;Rueffer, Daniel;Wyrsch, Nicolas;Ballif, Christophe;Miglio, Leo;Fontcuberta i Morral, Anna;
12:77:11 Geometric limits of coherent III-V core/shell nanowires
DOI:10.1063/1.4816460 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Salehzadeh, O.;Kavanagh, K. L.;Watkins, S. P.;
12:77:12 Shell-Thickness Controlled Semiconductor-Metal Transition in Si-SiC Core-Shell Nanowires
DOI:10.1021/acs.nanolett.5b00670 JN:NANO LETTERS PY:2015
TC:0 AU: Amato, Michele;Rurali, Riccardo;
12:77:13 Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires
DOI:10.1063/1.4896505 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Grandal, Javier;Wu, Mingjian;Kong, Xiang;Dimakis, Michael Hanke Emmanouil;Geelhaar, Lutz;Riechert, Henning;Trampert, Achim;
12:77:14 Building a spin quantum bit register using semiconductor nanowires
DOI:10.1088/0957-4484/21/13/134018 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Baugh, J.;Fung, J. S.;Mracek, J.;LaPierre, R. R.;
12:77:15 Control of GaAs nanowire morphology by group III precursor chemistry
DOI:10.1016/j.jcrysgro.2011.04.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Salehzadeh, O.;Watkins, S. P.;
12:77:16 Electrical characteristics of core-shell p-n GaAs nanowire structures with Te as the n-dopant
DOI:10.1088/0957-4484/21/13/134007 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Caram, J.;Sandoval, C.;Tirado, M.;Comedi, D.;Czaban, J.;Thompson, D. A.;LaPierre, R. R.;
12:77:17 First-principles design of efficient solar cells using two-dimensional arrays of core-shell and layered SiGe nanowires
DOI:10.1103/PhysRevB.83.035317 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Pekoz, R.;Malcioglu, O. B.;Raty, J. -Y.;
12:77:18 Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications
DOI:10.1088/0957-4484/21/13/130201 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Goodnick, Stephen;Korkin, Anatoli;Krstic, Predrag;Mascher, Peter;Preston, John;Zaslavsky, Alex;
12:77:19 Prismatic dislocation loops in strained core-shell nanowire heterostructures
DOI:10.1103/PhysRevB.82.054118 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Colin, Jerome;
12:78:1 Near-field investigation of spatial variations of (20(2)over-bar(1)over-bar) InGaN quantum well emission spectra
DOI:10.1063/1.4823589 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Marcinkevicius, S.;Zhao, Y.;Kelchner, K. M.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:78:2 Optical properties of extended and localized states in m-plane InGaN quantum wells
DOI:10.1063/1.4794904 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Marcinkevicius, S.;Kelchner, K. M.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:78:3 Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
DOI:10.1063/1.3460278 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Liuolia, Vytautas;Marcinkevicius, Saulius;Lin, You-Da;Ohta, Hiroaki;DenBaars, Steven P.;Nakamura, Shuji;
12:78:4 Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
DOI:10.1063/1.3594239 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:22 AU: Pinos, A.;Liuolia, V.;Marcinkevicius, S.;Yang, J.;Gaska, R.;Shur, M. S.;
12:78:5 Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well
DOI:10.1063/1.4869459 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Marcinkevicius, S.;Ivanov, R.;Zhao, Y.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:78:6 Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
DOI:10.1063/1.4820839 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Marcinkevicius, S.;Kelchner, K. M.;Kuritzky, L. Y.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:78:7 Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates
DOI:10.1063/1.4905191 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, B.;Smith, R.;Athanasiou, M.;Yu, X.;Bai, J.;Wang, T.;
12:78:8 Carrier redistribution between different potential sites in semipolar (20(2)over-bar1) InGaN quantum wells studied by near-field photoluminescence
DOI:10.1063/1.4896034 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Marcinkevicius, S.;Gelzinyte, K.;Zhao, Y.;Nakamura, S.;DenBaars, S. P.;Speck, J. S.;
12:78:9 Photoexcited carrier dynamics in AlInN/GaN heterostructures
DOI:10.1063/1.4729033 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Liuolia, V.;Marcinkevicius, S.;Billingsley, D.;Shatalov, M.;Yang, J.;Gaska, R.;Shur, M. S.;
12:78:10 Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
DOI:10.1063/1.3502482 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Liuolia, V.;Pinos, A.;Marcinkevicius, S.;Lin, Y. D.;Ohta, H.;DenBaars, S. P.;Nakamura, S.;
12:78:11 Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures
DOI:10.1063/1.4820794 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Liu, Bin;Smith, Rick;Bai, Jie;Gong, Yipin;Wang, Tao;
12:78:12 Transient photoreflectance of AlInN/GaN heterostructures
DOI:10.1063/1.4768670 JN:AIP ADVANCES PY:2012
TC:0 AU: Marcinkevicius, S.;Liuolia, V.;Billingsley, D.;Shatalov, M.;Yang, J.;Gaska, R.;Shur, M. S.;
12:78:13 Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
DOI:10.1063/1.3506697 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Pinos, A.;Marcinkevicius, S.;Yang, J.;Gaska, R.;Shatalov, M.;Shur, M. S.;
12:78:14 Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells
DOI:10.1063/1.3605253 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Huang, Y.;Sun, K. W.;Fischer, A. M.;Wei, Q. Y.;Juday, R.;Ponce, F. A.;Kato, R.;Yokogawa, T.;
12:78:15 High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy
DOI:10.1063/1.4904710 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Marcinkevicius, S.;Jain, R.;Shatalov, M.;Yang, J.;Shur, M.;Gaska, R.;
12:78:16 Migration-enhanced metal-organic chemical vapor deposition of AlxIn1-xN/GaN heterostructures (x > 0.75) on c-plane sapphire
DOI:10.1016/j.jcrysgro.2011.06.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Billingsley, Daniel;Yang, Jinwei;Gaska, Remis;Shur, Michael;
12:78:17 Growth of InGaN layers on (111) silicon substrates by reactive sputtering
DOI:10.1016/j.jallcom.2013.10.198 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Guo, Qixin;Nakao, Tomoya;Ushijima, Takaya;Shi, Wangzhou;Liu, Feng;Saito, Katsuhiko;Tanaka, Tooru;Nishio, Mitsuhiro;
12:78:18 Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy
DOI:10.1063/1.3583461 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Guo, Q. X.;Senda, H.;Saito, K.;Tanaka, T.;Nishio, M.;Ding, J.;Fan, T. X.;Zhang, D.;Wang, X. Q.;Liu, S. T.;Shen, B.;Ohtani, R.;
12:78:19 Growth kinetics of AlxGa1-xN grown via ammonia-based metal-organic molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2009.10.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:1 AU: Billingsley, Daniel;Henderson, Walter;Pritchett, David;Doolittle, W. Alan;
12:79:1 Microstructures produced during the epitaxial growth of InGaN alloys
DOI:10.1016/j.jcrysgro.2009.12.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:65 AU: Stringfellow, G. B.;
12:79:2 Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
DOI:10.1063/1.4891990 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Ju, James (Zi-Jian);Loitsch, Bernhard;Stettner, Thomas;Schuster, Fabian;Stutzmann, Martin;Koblmueller, Gregor;
12:79:3 Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells
DOI:10.1016/j.solmat.2014.07.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Fabien, Chloe A. M.;Doolittle, W. Alan;
12:79:4 Observation and control of the surface kinetics of InGaN for the elimination of phase separation
DOI:10.1063/1.4733347 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Moseley, Michael;Gunning, Brendan;Greenlee, Jordan;Lowder, Jonathan;Namkoong, Gon;Doolittle, W. Alan;
12:79:5 Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
DOI:10.1063/1.3509416 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Moseley, Michael;Lowder, Jonathan;Billingsley, Daniel;Doolittle, W. Alan;
12:79:6 Carrier localization in InN/InGaN multiple-quantum wells with high In-content
DOI:10.1063/1.4742157 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Valdueza-Felip, S.;Rigutti, L.;Naranjo, F. B.;Ruterana, P.;Mangeney, J.;Julien, F. H.;Gonzalez-Herraez, M.;Monroy, E.;
12:79:7 High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
DOI:10.1063/1.4903944 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Valdueza-Felip, S.;Bellet-Amalric, E.;Nunez-Cascajero, A.;Wang, Y.;Chauvat, M. -P.;Ruterana, P.;Pouget, S.;Lorenz, K.;Alves, E.;Monroy, E.;
12:79:8 InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
DOI:10.1063/1.3552195 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Grandal, J.;Pereiro, J.;Bengoechea-Encabo, A.;Fernandez-Garrido, S.;Sanchez-Garcia, M. A.;Munoz, E.;Calleja, E.;Luna, E.;Trampert, A.;
12:79:9 Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
DOI:10.1063/1.4822122 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Fischer, A. M.;Wei, Y. O.;Ponce, F. A.;Moseley, M.;Gunning, B.;Doolittle, W. A.;
12:79:10 Low-temperature growth of InGaN films over the entire composition range by MBE
DOI:10.1016/j.jcrysgro.2015.02.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Fabien, Chloe A. M.;Gunning, Brendan P.;Doolittle, W. Alan;Fischer, Alec M.;Wei, Yong O.;Xie, Hongen;Ponce, Fernando A.;
12:79:11 Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
DOI:10.1063/1.4747466 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Gunning, Brendan;Lowder, Jonathan;Moseley, Michael;Doolittle, W. Alan;
12:79:12 Compositional instability in strained InGaN epitaxial layers induced by kinetic effects
DOI:10.1063/1.3626434 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Huang, Yong;Melton, Andrew;Jampana, Balakrishnam;Jamil, Muhammad;Ryou, Jae-Hyun;Dupuis, Russell D.;Ferguson, Ian T.;
12:79:13 Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy
DOI:10.1116/1.4790865 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Moseley, Michael;Gunning, Brendan;Lowder, Jonathan;Doolittle, W. Alan;Namkoong, Gon;
12:79:14 Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation
DOI:10.1016/j.jcrysgro.2013.05.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Yamaguchi, T.;Uematsu, N.;Araki, T.;Honda, T.;Yoon, E.;Nanishi, Y.;
12:79:15 Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1-xN layers with medium Al content (x=0.4-0.6)
DOI:10.1016/j.jcrysgro.2015.03.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Nechaev, D. V.;Brunkov, P. N.;Troshkov, S. I.;Jmerik, V. N.;Ivanov, S. V.;
12:79:16 Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
DOI:10.1063/1.3535609 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Naranjo, F. B.;Kandaswamy, P. K.;Valdueza-Felip, S.;Calvo, V.;Gonzalez-Herraez, M.;Martin-Lopez, S.;Corredera, P.;Mendez, J. A.;Mutta, G. R.;Lacroix, B.;Ruterana, P.;Monroy, E.;
12:79:17 In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications
DOI:10.1116/1.4794788 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:5 AU: Hoffbauer, Mark A.;Williamson, Todd L.;Williams, Joshua J.;Fordham, Julia L.;Yu, Kin M.;Walukiewicz, Wladek;Reichertz, Lothar A.;
12:79:18 Barrier penetration effects on thermopower in semiconductor quantum wells
DOI:10.1063/1.4861597 JN:AIP ADVANCES PY:2014
TC:0 AU: Vaidya, R. G.;Sankeshwar, N. S.;Mulimani, B. G.;
12:79:19 Observation of sub-100 femtosecond electron cooling time in InN
DOI:10.1063/1.3302467 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Su, Yi-En;Wen, Yu-Chieh;Lee, Hong-Mao;Gwo, Shangjr;Sun, Chi-Kuang;
12:79:20 Inducing a junction in n-type InxGa(1-x)N
DOI:10.1116/1.4797489 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Williams, Joshua J.;Williamson, Todd L.;Hoffbauer, Mark A.;Fischer, Alec M.;Goodnick, Stephen M.;Faleev, Nikolai N.;Ghosh, Kunal;Honsberg, Christiana B.;
12:79:21 Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN
DOI:10.1063/1.3591974 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Su, Yi-En;Wen, Yu-Chieh;Hong, Yu-Liang;Lee, Hong-Mao;Gwo, Shangjr;Lin, Yuan-Ting;Tu, Li-Wei;Liu, Hsiang-Lin;Sun, Chi-Kuang;
12:79:22 Order-disorder transition in wurtzite InxGa1-xN
DOI:10.1016/j.jcrysgro.2012.07.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Elyukhin, V. A.;
12:79:23 Double-Pulsed Growth of InN by RF-MBE
DOI:10.1007/s11664-013-2499-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Kraus, Andreas;Bremers, Heiko;Rossow, Uwe;Hangleiter, Andreas;
12:80:1 Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires
DOI:10.1063/1.4760273 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Dobrovolsky, A.;Stehr, J. E.;Chen, S. L.;Kuang, Y. J.;Sukrittanon, S.;Tu, C. W.;Chen, W. M.;Buyanova, I. A.;
12:80:2 Optimizing GaNP Coaxial Nanowires for Efficient Light Emission by Controlling Formation of Surface and Interfacial Defects
DOI:10.1021/nl50345s JN:NANO LETTERS PY:2015
TC:3 AU: Stehr, Jan E.;Dobrovolsky, Alexander;Sukrittanon, Supanee;Kuang, Yanjin;Tu, Charles W.;Chen, Weimin M.;Buyanova, Irina A.;
12:80:3 Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
DOI:10.1063/1.3681172 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Kuang, Y. J.;Sukrittanon, S.;Li, H.;Tu, C. W.;
12:80:4 Minimum length scales for enhancement of the power factor in thermoelectric nanostructures
DOI:10.1063/1.3359659 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Pichanusakorn, P.;Bandaru, P. R.;
12:80:5 Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting
DOI:10.1002/smll.201401342 JN:SMALL PY:2014
TC:7 AU: Dobrovolsky, Alexander;Sukrittanon, Supanee;Kuang, Yanjin;Tu, Charles W.;Chen, Weimin M.;Buyanova, Irina A.;
12:80:6 The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1-x thin films
DOI:10.1063/1.3626041 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Pichanusakorn, P.;Kuang, Y. J.;Patel, C. J.;Tu, C. W.;Bandaru, P. R.;
12:80:7 Raman spectroscopy of GaP/GaNP core/shell nanowires
DOI:10.1063/1.4901446 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Dobrovolsky, A.;Sukrittanon, S.;Kuang, Y. J.;Tu, C. W.;Chen, W. M.;Buyanova, I. A.;
12:80:8 Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
DOI:10.1063/1.4893745 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Sukrittanon, S.;Kuang, Y. J.;Dobrovolsky, A.;Kang, Won-Mo;Jang, Ja-Soon;Kim, Bong-Joong;Chen, W. M.;Buyanova, I. A.;Tu, C. W.;
12:80:9 Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism
DOI:10.1063/1.4900960 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kuang, Y. J.;Takabayashi, K.;Sukrittanon, S.;Pan, J. L.;Kamiya, I.;Tu, C. W.;
12:80:10 GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy
DOI:10.1063/1.4795782 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Kuang, Y. J.;Yu, K. M.;Kudrawiec, R.;Luce, A. V.;Ting, M.;Walukiewicz, W.;Tu, C. W.;
12:80:11 Growth of GaNxAsyP1-x-y alloys on GaP(100) by gas-source molecular beam epitaxy
DOI:10.1116/1.3680603 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:9 AU: Kuang, Yan-Jin;Chen, San-Wen;Li, Hua;Sinha, Sunil K.;Tu, Charles Wuching;
12:80:12 Origin of Strong Photoluminescence Polarization in GaNP Nanowires
DOI:10.1021/nl502281p JN:NANO LETTERS PY:2014
TC:7 AU: Filippov, Stanislav;Sukrittanon, Supanee;Kuang, Yanjin;Tu, Charles;Persson, Per O. A.;Chen, Weimin M.;Buyanova, Irina A.;
12:80:13 Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
DOI:10.1103/PhysRevB.81.115334 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Dagnelund, D.;Vorona, I. P.;Vlasenko, L. S.;Wang, X. J.;Utsumi, A.;Furukawa, Y.;Wakahara, A.;Yonezu, H.;Buyanova, I. A.;Chen, W. M.;
12:80:14 Feasibility of enhancing the thermoelectric power factor in GaNxAs1-x
DOI:10.1103/PhysRevB.86.085314 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Pichanusakorn, P.;Kuang, Y. J.;Patel, C.;Tu, C. W.;Bandaru, P. R.;
12:80:15 Growth and characterization of GaP/GaNP core/shell nanowires
DOI:10.1116/1.4793476 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:3 AU: Sukrittanon, Supanee;Kuang, YanJin;Tu, Charles W.;
12:80:16 Thermoelectric power factor of In2O3:Pd nanocomposite films
DOI:10.1063/1.3607289 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Gregory, Otto J.;Amani, Matin;Fralick, Gustave C.;
12:80:17 Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon
DOI:10.1063/1.3457355 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Tatebayashi, J.;Lin, A.;Wong, P. S.;Hick, R. F.;Huffaker, D. L.;
12:80:18 Grain growth and morphology of In2O3:Pd nanocomposite films
DOI:10.1016/j.tsf.2013.07.034 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Amani, Matin;Gregory, Otto J.;
12:80:19 Electronic structure study of N, O related defects in GaP for photoelectrochemical applications
DOI:10.1039/c3ta11475a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:0 AU: Huda, Muhammad N.;Deutsch, Todd G.;Sarker, Pranab;Turner, John A.;
12:80:20 Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting
DOI:10.1063/1.3500981 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Yi, Wei;Kim, Taeseok;Shalish, Ilan;Loncar, Marko;Aziz, Michael J.;Narayanamurti, Venkatesh;
12:80:21 Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes
DOI:10.1063/1.3455340 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Tatebayashi, J.;Mariani, G.;Lin, A.;Hicks, R. F.;Huffaker, D. L.;
12:81:1 Modeling Light Trapping in Nanostructured Solar Cells
DOI:10.1021/nn203906t JN:ACS NANO PY:2011
TC:98 AU: Ferry, Vivian E.;Polman, Albert;Atwater, Harry A.;
12:81:2 Broadband Light Absorption Enhancement in Thin-Film Silicon Solar Cells
DOI:10.1021/nl904057p JN:NANO LETTERS PY:2010
TC:130 AU: Wang, Wei;Wu, Shaomin;Reinhardt, Kitt;Lu, Yalin;Chen, Shaochen;
12:81:3 Large Integrated Absorption Enhancement in Plasmonic Solar Cells by Combining Metallic Gratings and Antireflection Coatings
DOI:10.1021/nl101875t JN:NANO LETTERS PY:2011
TC:114 AU: Munday, Jeremy N.;Atwater, Harry A.;
12:81:4 Angle insensitive enhancement of organic solar cells using metallic gratings
DOI:10.1063/1.3533980 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:37 AU: Abass, Aimi;Shen, Honghui;Bienstman, Peter;Maes, Bjorn;
12:81:5 Dual-interface gratings for broadband absorption enhancement in thin-film solar cells
DOI:10.1103/PhysRevB.85.115449 JN:PHYSICAL REVIEW B PY:2012
TC:22 AU: Abass, Aimi;Le, Khai Q.;Alu, Andrea;Burgelman, Marc;Maes, Bjorn;
12:81:6 Modeling combined coherent and incoherent scattering structures for light trapping in solar cells
DOI:10.1063/1.4813102 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Abass, Aimi;Trompoukis, Christos;Leyre, Sven;Burgelman, Marc;Maes, Bjorn;
12:81:7 Engineering gratings for light trapping in photovoltaics: The supercell concept
DOI:10.1103/PhysRevB.86.041404 JN:PHYSICAL REVIEW B PY:2012
TC:25 AU: Martins, Emiliano R.;Li, Juntao;Liu, YiKun;Zhou, Jianying;Krauss, Thomas F.;
12:81:8 Broadband light trapping in thin organic photovoltaic cells using plasmonic resonant antennas
DOI:10.1063/1.4817369 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Le, Khai Q.;
12:81:9 Fano-induced solar absorption enhancement in thin organic photovoltaic cells
DOI:10.1063/1.4898011 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Le, Khai Q.;Alu, Andrea;
12:81:10 Surface plasmon resonance caused by gold nanoparticles formed on sprayed TiO2 films
DOI:10.1016/j.tsf.2013.11.125 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Acik, I. Oja;Dolgov, L.;Krunks, M.;Mere, A.;Mikli, V.;Pikker, S.;Loot, A.;Sildos, I.;
12:81:11 Enhanced light absorption in thin-film tandem solar cells using a bottom metallic nanograting
DOI:10.1007/s00339-013-8075-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Zhang, Xuanru;Knize, Randy J.;Lu, Yalin;
12:82:1 Investigation of carrier transport properties in semipolar (11(2)over-bar2) GaN films with low defect density
DOI:10.1063/1.4825171 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Jang, Soohwan;Kim, Hyonwoong;Kim, Doo Soo;Hwang, Sung-Min;Kim, Jihyun;Baik, Kwang Hyeon;
12:82:2 Optical and electrical improvements of semipolar (11-22) GaN-based light emitting diodes by Si doping of n-GaN template
DOI:10.1016/j.jallcom.2014.02.031 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Lee, Jae-Hwan;Han, Sang-Hyun;Song, Ki-Ryong;Lee, Sung-Nam;
12:82:3 Stacking faults blocking process in (11-22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
DOI:10.1016/j.jcrysgro.2010.05.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:18 AU: Kriouche, N.;Vennegues, P.;Nemoz, M.;Nataf, G.;De Mierry, P.;
12:82:4 Growth evolution and microstructural characterization of semipolar (11(2)over-bar2) GaN selectively grown on etched r-plane sapphire
DOI:10.1016/j.jcrysgro.2011.12.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Leung, Benjamin;Sun, Qian;Yerino, Christopher;Zhang, Yu;Han, Jung;Kong, Bo Hyun;Cho, Hyung Koun;Liao, Kuan-Yung;Li, Yun-Li;
12:82:5 Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
DOI:10.1063/1.3454278 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: de Mierry, P.;Kriouche, N.;Nemoz, M.;Chenot, S.;Nataf, G.;
12:82:6 Semipolar (20(2)over-bar1) GaN and InGaN quantum wells on sapphire substrates
DOI:10.1063/1.4886578 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Leung, Benjamin;Wang, Dili;Kuo, Yu-Sheng;Xiong, Kanglin;Song, Jie;Chen, Danti;Park, Sung Hyun;Hong, Su Yeon;Choi, Joo Won;Han, Jung;
12:82:7 Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode
DOI:10.1063/1.4813391 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kim, Doo Soo;Lee, Sejoon;Kim, Deuk Young;Sharma, Sanjeev K.;Hwang, Sung-Min;Seo, Yong Gon;
12:82:8 Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer
DOI:10.1016/j.jcrysgro.2012.10.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Jeong, Joocheol;Jang, Jongjin;Hwang, Jungwhan;Jung, Chilsung;Kim, Jinwan;Lee, Kyungjae;Lim, Hyoungjin;Nam, Okhyun;
12:82:9 Planar semipolar (10(1)over-bar1) GaN on (11(2)over-bar3) sapphire
DOI:10.1063/1.3442484 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Schwaiger, Stephan;Argut, Ilona;Wunderer, Thomas;Roesch, Rudolf;Lipski, Frank;Biskupek, Johannes;Kaiser, Ute;Scholz, Ferdinand;
12:82:10 Efficient blocking of planar defects by prismatic stacking faults in semipolar (11(2)over-bar2)-GaN layers on m-sapphire by epitaxial lateral overgrowth
DOI:10.1063/1.3571455 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Lacroix, B.;Chauvat, M. P.;Ruterana, P.;Nataf, G.;de Mierry, P.;
12:82:11 Characterization of unintentional doping in nonpolar GaN
DOI:10.1063/1.3284944 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Zhu, Tongtong;Johnston, Carol F.;Haberlen, Maik;Kappers, Menno J.;Oliver, Rachel A.;
12:82:12 Microstructural, optical, and electrical characterization of semipolar, (11(2)over-bar2) gallium nitride grown by epitaxial lateral overgrowth
DOI:10.1063/1.3498813 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Zhu, Tongtong;Johnston, Carol F.;Kappers, Menno J.;Oliver, Rachel A.;
12:82:13 Growth and doping of semipolar GaN grown on patterned sapphire substrates
DOI:10.1016/j.jcrysgro.2014.08.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:7 AU: Scholz, F.;Meisch, T.;Caliebe, M.;Schoerner, S.;Thonke, K.;Kirste, L.;Bauer, S.;Lazarev, S.;Baumbach, T.;
12:82:14 Study of crystallographic tilt and surface morphology on epitaxial lateral overgrown semipolar (11-22) GaN
DOI:10.1116/1.4827825 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Yi, Hye-Rin;Song, Ki-Ryong;Han, Sang-Hyun;Lee, Jae-Hwan;Lee, Sung-Nam;
12:82:15 Charged basal stacking fault scattering in nitride semiconductors
DOI:10.1063/1.3543846 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Konar, Aniruddha;Fang, Tian;Sun, Nan;Jena, Debdeep;
12:82:16 Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
DOI:10.1063/1.3460641 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Haeberlen, M.;Badcock, T. J.;Moram, M. A.;Hollander, J. L.;Kappers, M. J.;Dawson, P.;Humphreys, C. J.;Oliver, R. A.;
12:82:17 Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities
DOI:10.1016/j.jcrysgro.2011.01.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Oh, Dong-Sub;Jang, Jong-Jin;Nam, Okhyun;Song, Keun-Man;Lee, Sung-Nam;
12:82:18 Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
DOI:10.1016/j.jcrysgro.2014.07.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Tendille, Florian;De Mierry, Philippe;Vennegues, Philippe;Chenot, Sebastien;Teisseire, Monique;
12:82:19 High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace
DOI:10.1063/1.3670046 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Okada, Narihito;Oshita, Hiroyasu;Yamane, Keisuke;Tadatomo, Kazuyuki;
12:82:20 Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth
DOI:10.1016/j.jcrysgro.2011.03.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Hu, Yan-Ling;Kraemer, Stefan;Fini, Paul T.;Speck, James S.;
12:82:21 Defect reduction in (11-22) semipolar GaN with embedded InN islands on m-plane sapphire
DOI:10.1016/j.jcrysgro.2012.09.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Jung, Chilsung;Jang, Jongjin;Hwang, Junghwan;Jeong, Joocheol;Kim, Jinwan;Lee, Kyungjae;Nam, Okhyun;
12:82:22 Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
DOI:10.1016/j.jcrysgro.2013.11.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Yang, Jiankun;Wei, Tongbo;Huo, Ziqiang;Hu, Qiang;Zhang, Yonghui;Duan, Ruifei;Wang, Junxi;
12:82:23 Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (11(2)over-bar2) oriented GaN
DOI:10.1016/j.jcrysgro.2014.10.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Caliebe, Marian;Meisch, Tobias;Madel, Manfred;Scholz, Ferdinand;
12:82:24 Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers
DOI:10.1063/1.4750238 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Hu, Yan-Ling;Kraemer, Stephan;Fini, Paul T.;Speck, James S.;
12:82:25 Phase control of semi-polar (11(2)over-bar2) and non-polar (11(2)over-bar0) GaN on cone shaped r-plane patterned sapphire substrates
DOI:10.1016/j.jcrysgro.2013.01.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Wang, Mei-Tan;Brunner, Frank;Liao, Kuan-Yung;Li, Yun-Li;Tseng, Snow H.;Weyers, Markus;
12:82:26 Characterization of {11-22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates
DOI:10.1016/j.jcrysgro.2013.12.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Furuya, H.;Hashimoto, Y.;Yamane, K.;Okada, N.;Tadatomo, K.;
12:82:27 Growth of semipolar (20(2)over-bar1) GaN layers on patterned silicon (114) 1 degrees off by Metal Organic Vapor Phase Epitaxy
DOI:10.1016/j.jcrysgro.2015.02.098 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Khoury, M.;Leroux, M.;Nemoz, M.;Feuillet, G.;Zuniga-Perez, J.;Vennegues, P.;
12:82:28 Study of epitaxial lateral overgrowth of semipolar (11-22) GaN by using different SiO2 pattern sizes
DOI:10.1016/j.materresbull.2013.05.075 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Song, Ki-Ryong;Lee, Jae-Hwan;Han, Sang-Hyun;Yi, Hye-Rin;Lee, Sung-Nam;
12:82:29 Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy
DOI:10.1080/14786435.2013.805272 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:2 AU: Huang, Chang-Ning;Shields, Philip A.;Allsopp, Duncan W. E.;Trampert, Achim;
12:83:1 Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
DOI:10.1016/j.jallcom.2013.12.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Jang, Lee-Woon;Jeon, Dae-Woo;Polyakov, A. Y.;Govorkov, A. V.;Sokolov, V. N.;Smirnov, N. B.;Cho, Han-Su;Yun, Jin-Hyeon;Shcherbatchev, K. D.;Baek, Jong-Hyeob;Lee, In-Hwan;
12:83:2 The fabrication of large-area, free-standing GaN by a novel nanoetching process
DOI:10.1088/0957-4484/22/4/045603 JN:NANOTECHNOLOGY PY:2011
TC:25 AU: Zhang, Yu;Sun, Qian;Leung, Benjamin;Simon, John;Lee, Minjoo Larry;Han, Jung;
12:83:3 Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications
DOI:10.1021/nl5009629 JN:NANO LETTERS PY:2014
TC:3 AU: Park, Sung Hyun;Yuan, Ge;Chen, Danti;Xiong, Kanglin;Song, Jie;Leung, Benjamin;Han, Jung;
12:83:4 A liftoff process of GaN layers and devices through nanoporous transformation
DOI:10.1063/1.4711218 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Zhang, Yu;Leung, Benjamin;Han, Jung;
12:83:5 Large-area InP-based crystalline nanomembrane flexible photodetectors
DOI:10.1063/1.3372635 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Yang, Weiquan;Yang, Hongjun;Qin, Guoxuan;Ma, Zhenqiang;Berggren, Jesper;Hammar, Mattias;Soref, Richard;Zhou, Weidong;
12:83:6 High reflectance membrane-based distributed Bragg reflectors for GaN photonics
DOI:10.1063/1.4768806 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Chen, Danti;Han, Jung;
12:83:7 Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor
DOI:10.1002/adfm.201401438 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:0 AU: Xiong, Kanglin;Park, Sung Hyun;Song, Jie;Yuan, Ge;Chen, Danti;Leung, Benjamin;Han, Jung;
12:83:8 Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes
DOI:10.1063/1.3601861 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Yerino, Christopher D.;Zhang, Yu;Leung, Benjamin;Lee, Minjoo L.;Hsu, Ta-Cheng;Wang, Chun-Kai;Peng, Wei-Chih;Han, J.;
12:83:9 Mesoporous germanium morphology transformation for lift-off process and substrate re-use
DOI:10.1063/1.4775357 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Boucherif, Abderraouf;Beaudin, Guillaume;Aimez, Vincent;Ares, Richard;
12:83:10 Mechanical Properties of Nanoporous GaN and Its Application for Separation and Transfer of GaN Thin Films
DOI:10.1021/am4032345 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Huang, Shanjin;Zhang, Yu;Leung, Benjamin;Yuan, Ge;Wang, Gang;Jiang, Hao;Fan, Yingmin;Sun, Qian;Wang, Jianfeng;Xu, Ke;Han, Jung;
12:83:11 Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings
DOI:10.1021/am404285s JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Jang, Lee-Woon;Jeon, Dae-Woo;Chung, Tae-Hoon;Polyakov, Alexander Y.;Cho, Han-Su;Yun, Jin-Hyeon;Ju, Jin-Woo;Baek, Jong-Hyeob;Choi, Joo-Won;Lee, In-Hwan;
12:83:12 Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism
DOI:10.1063/1.4752259 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:18 AU: Chen, Danti;Xiao, Hongdi;Han, Jung;
12:83:13 Fabrication of Vertical Light Emitting Diode Based on Thermal Deformation of Nanoporous GaN and Removable Mechanical Supporter
DOI:10.1021/am501406q JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kang, Jin-Ho;Ebaid, Mohamed;Lee, June Key;Jeong, Tak;Rye, Sang-Wan;
12:83:14 Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing
DOI:10.1063/1.3462448 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Ghannam, Moustafa Y.;Alomar, Abdulazeez S.;Poortmans, Jef;Mertens, Robert P.;
12:83:15 Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing
DOI:10.1063/1.4829912 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Sudoh, K.;Hiruta, R.;Kuribayashi, H.;
12:83:16 "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step
DOI:10.1063/1.4803009 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Hernandez, David;Trifonov, Trifon;Garin, Moises;Alcubilla, Ramon;
12:83:17 A chip-level electrothermal-coupled design model for high-power light-emitting diodes
DOI:10.1063/1.3311564 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Huang, Shanjin;Wu, Hao;Fan, Bingfeng;Zhang, Baijun;Wang, Gang;
12:83:18 Transfer of InP thin films from engineered porous silicon substrates
DOI:10.1063/1.3284942 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Joshi, Monali B.;Goorsky, Mark S.;
12:83:19 Sintering and reorganization of electrochemically etched mesoporous germanium layers in various atmospheres
DOI:10.1016/j.solmat.2010.04.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:5 AU: Rojas, E. Garralaga;Hensen, J.;Baur, C.;Brendel, R.;
12:83:20 Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes
DOI:10.1063/1.4717493 JN:AIP ADVANCES PY:2012
TC:4 AU: Doan, M. H.;Kim, S.;Lee, J. J.;Lim, H.;Rotermund, F.;Kim, Kihong;
12:83:21 A theoretical framework to obtain interface's shapes during the high-temperature annealing of high-aspect-ratio gratings
DOI:10.1063/1.3492442 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Castez, Marcos F.;Salvarezza, Roberto C.;Nakamura, Jun;Sudoh, Koichi;
12:83:22 Anisotropic capillary instability of silicon nanostructures under hydrogen anneal
DOI:10.1063/1.3690869 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Barwicz, T.;Cohen, G. M.;Reuter, K. B.;Bangsaruntip, S.;Sleight, J. W.;
12:83:23 Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method
DOI:10.1016/j.jallcom.2013.09.154 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Oh, Munsik;Lee, Jeong Ju;Lee, June Key;Kim, Hyunsoo;
12:83:24 Lift-off of epitaxial GaN by regrowth over nanoporous GaN
DOI:10.1016/j.jcrysgro.2012.09.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Kang, Jin-Ho;Lee, June Key;Ryu, Sang-Wan;
12:83:25 Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding
DOI:10.1007/s11664-010-1264-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:2 AU: Byun, Ki Yeol;Ferain, Isabelle;Song, Scott;Holl, Susan;Colinge, Cindy;
12:83:26 Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6 degrees off towards (111)
DOI:10.1016/j.tsf.2011.07.063 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Rojas, E. Garralaga;Terheiden, B.;Plagwitz, H.;Hensen, J.;Wiedemeier, V.;Berth, G.;Zrenner, A.;Brendel, R.;
12:84:1:1 Low subthreshold slope in junctionless multigate transistors
DOI:10.1063/1.3358131 JN:APPLIED PHYSICS LETTERS PY:2010
TC:46 AU: Lee, Chi-Woo;Nazarov, Alexei N.;Ferain, Isabelle;Akhavan, Nima Dehdashti;Yan, Ran;Razavi, Pedram;Yu, Ran;Doria, Rodrigo T.;Colinge, Jean-Pierre;
12:84:1:2 Improvement of carrier ballisticity in junctionless nanowire transistors
DOI:10.1063/1.3559625 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Akhavan, Nima Dehdashti;Ferain, Isabelle;Razavi, Pedram;Yu, Ran;Colinge, Jean-Pierre;
12:84:1:3 Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory
DOI:10.1063/1.4773055 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Parihar, Mukta Singh;Ghosh, Dipankar;Armstrong, G. Alastair;Kranti, Abhinav;
12:84:1:4 Bipolar effects in unipolar junctionless transistors
DOI:10.1063/1.4748909 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Parihar, Mukta Singh;Ghosh, Dipankar;Armstrong, G. Alastair;Yu, Ran;Razavi, Pedram;Kranti, Abhinav;
12:84:1:5 Back bias induced dynamic and steep subthreshold swing in junctionless transistors
DOI:10.1063/1.4890845 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Parihar, Mukta Singh;Kranti, Abhinav;
12:84:1:6 Occurrence of zero gate oxide thickness coefficient in junctionless transistors
DOI:10.1063/1.4807763 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Parihar, Mukta Singh;Ghosh, Dipankar;Kranti, Abhinav;
12:84:1:7 Single transistor latch phenomenon in junctionless transistors
DOI:10.1063/1.4803879 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Parihar, Mukta Singh;Ghosh, Dipankar;Kranti, Abhinav;
12:84:1:8 Junctionless in-plane-gate transparent thin-film transistors
DOI:10.1063/1.3659478 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Jiang, Jie;Sun, Jia;Dou, Wei;Zhou, Bin;Wan, Qing;
12:84:1:9 RF/Analog Performance of Novel Junctionless Vertical MOSFETs
DOI:10.1080/10584587.2011.576899 JN:INTEGRATED FERROELECTRICS PY:2011
TC:0 AU: Tai, Chih-Hsuan;Lin, Jyi-Tsong;Eng, Yi-Chuen;
12:84:2:1 Reduced electric field in junctionless transistors
DOI:10.1063/1.3299014 JN:APPLIED PHYSICS LETTERS PY:2010
TC:59 AU: Colinge, Jean-Pierre;Lee, Chi-Woo;Ferain, Isabelle;Akhavan, Nima Dehdashti;Yan, Ran;Razavi, Pedram;Yu, Ran;Nazarov, Alexei N.;Doriac, Rodrigo T.;
12:84:2:2 Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4767353 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Rudenko, Tamara;Nazarov, Alexey;Ferain, Isabelle;Das, Samaresh;Yu, Ran;Barraud, Sylvain;Razavi, Pedram;
12:84:2:3 Less mobility degradation induced by transverse electric-field in junctionless transistors
DOI:10.1063/1.4902549 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Park, So Jeong;Jeon, Dae-Young;Montes, Laurent;Mouis, Mireille;Barraud, Sylvain;Kim, Gyu-Tae;Ghibaudo, Gerard;
12:84:2:4 Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors
DOI:10.1063/1.4822318 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ma, Liuhong;Han, Weihua;Wang, Hao;Li, Xiaoming;Yang, Fuhua;
12:84:2:5 Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor
DOI:10.1063/1.4809828 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Li, Xiaoming;Han, Weihua;Wang, Hao;Ma, Liuhong;Zhang, Yanbo;Du, Yandong;Yang, Fuhua;
12:84:2:6 Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms
DOI:10.1063/1.4905366 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jeon, Dae-Young;Park, So Jeong;Mouis, Mireille;Barraud, Sylvain;Kim, Gyu-Tae;Ghibaudo, Gerard;
12:84:2:7 Separation of surface accumulation and bulk neutral channel in junctionless transistors
DOI:10.1063/1.4886139 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jeon, Dae-Young;Park, So Jeong;Mouis, Mireille;Joo, Min-Kyu;Barraud, Sylvain;Kim, Gyu-Tae;Ghibaudo, Gerard;
12:84:3:1 Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors
DOI:10.1021/nl203238e JN:NANO LETTERS PY:2011
TC:22 AU: Yi, Kyung Soo;Trivedi, Krutarth;Floresca, Herman C.;Yuk, Hyungsang;Hu, Walter;Kim, Moon J.;
12:84:3:2 Low-temperature conductance oscillations in junctionless nanowire transistors
DOI:10.1063/1.3506899 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Park, Jong-Tae;Kim, Jin Young;Lee, Chi-Woo;Colinge, Jean-Pierre;
12:84:3:3 Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors
DOI:10.1063/1.4870512 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wang, Hao;Han, Weihua;Ma, Liuhong;Li, Xiaoming;Hong, Wenting;Yang, Fuhua;
12:84:3:4 Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors
DOI:10.1063/1.3688245 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Park, Jong Tae;Kim, Jin Young;Colinge, Jean Pierre;
12:84:4:1 Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays
DOI:10.1063/1.4858955 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Clement, N.;Han, X. L.;Larrieu, G.;
12:84:4:2 Random telegraph-signal noise in junctionless transistors
DOI:10.1063/1.3557505 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Nazarov, A. N.;Ferain, I.;Akhavan, N. Dehdashti;Razavi, P.;Yu, R.;Colinge, J. P.;
12:84:4:3 Characterization of a junctionless diode
DOI:10.1063/1.3608150 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Yu, Ran;Ferain, Isabelle;Akhavan, Nima Dehdashti;Razavi, Pedram;Duffy, Ray;Colinge, Jean-Pierre;
12:84:4:4 Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements
DOI:10.1063/1.3626038 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Nazarov, A. N.;Ferain, I.;Akhavan, N. Dehdashti;Razavi, P.;Yu, R.;Colinge, J. P.;
12:84:5:1 Influence of channel material properties on performance of nanowire transistors
DOI:10.1063/1.4729777 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Razavi, Pedram;Fagas, Giorgos;Ferain, Isabelle;Yu, Ran;Das, Samaresh;Colinge, Jean-Pierre;
12:84:5:2 Low-frequency noise in junctionless multigate transistors
DOI:10.1063/1.3569724 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Jang, Doyoung;Lee, Jae Woo;Lee, Chi-Woo;Colinge, Jean-Pierre;Montes, Laurent;Lee, Jung Il;Kim, Gyu Tae;Ghibaudo, Gerard;
12:84:6:1 Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4745604 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Goto, Ken-Ichi;Yu, Tsung-Hsing;Wu, Jeff;Diaz, Carlos H.;Colinge, J. P.;
12:84:6:2 The zero temperature coefficient in junctionless nanowire transistors
DOI:10.1063/1.4744965 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Trevisoli, Renan Doria;Doria, Rodrigo Trevisoli;de Souza, Michelly;Das, Samaresh;Ferain, Isabelle;Pavanello, Marcelo Antonio;
12:84:6:3 Temperature-dependent characteristics of junctionless bulk transistor
DOI:10.1063/1.4821747 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Han, Ming-Hung;Chen, Hung-Bin;Yen, Shiang-Shiou;Shao, Chi-Shen;Chang, Chun-Yen;
12:84:6:4 Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 x 10(18) cm(-3) and silicon-on-insulator thickness of less than 10 nm
DOI:10.1063/1.3606420 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Kadotani, Naotoshi;Takahashi, Tsunaki;Ohashi, Teruyuki;Oda, Shunri;Uchida, Ken;
12:84:7:1 Planar junctionless transistor with non-uniform channel doping
DOI:10.1063/1.4801443 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Mondal, Partha;Ghosh, Bahniman;Bal, Punyasloka;
12:84:7:2 Scaling junctionless multigate field-effect transistors by step-doping
DOI:10.1063/1.4902864 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Song, Yi;Li, Xiuling;
12:84:7:3 Analysis of the leakage current in junctionless nanowire transistors
DOI:10.1063/1.4829465 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Trevisoli, Renan;Doria, Rodrigo Trevisoli;de Souza, Michelly;Pavanello, Marcelo Antonio;
12:84:7:4 A comparative study of SELBOX-JLT and SOI-JLT
DOI:10.1007/s00339-014-8661-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Khan, Uzma;Ghosh, Bahniman;Akram, Md Waseem;Salimath, Akshaykumar;
12:85:1 Identification of the prime optical center in GaN:Eu3+
DOI:10.1103/PhysRevB.81.085209 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Roqan, I. S.;O'Donnell, K. P.;Martin, R. W.;Edwards, P. R.;Song, S. F.;Vantomme, A.;Lorenz, K.;Alves, E.;Bockowski, M.;
12:85:2 Luminescence and energy-transfer mechanisms in Eu3+-doped GaN epitaxial films
DOI:10.1103/PhysRevB.81.035207 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Higuchi, Shinya;Ishizumi, Atsushi;Sawahata, Junji;Akimoto, Katsuhiro;Kanemitsu, Yoshihiko;
12:85:3 Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center
DOI:10.1063/1.3533806 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Woodward, N.;Poplawsky, J.;Mitchell, B.;Nishikawa, A.;Fujiwara, Y.;Dierolf, V.;
12:85:4 Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
DOI:10.1063/1.3478011 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Nishikawa, A.;Furukawa, N.;Kawasaki, T.;Terai, Y.;Fujiwara, Y.;
12:85:5 Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy
DOI:10.1063/1.3656018 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Takagi, Yasufumi;Suwa, Takanobu;Sekiguchi, Hiroto;Okada, Hiroshi;Wakahara, Akihiro;
12:85:6 Eu luminescence center created by Mg codoping in Eu-doped GaN
DOI:10.1063/1.4704920 JN:APPLIED PHYSICS LETTERS PY:2012
TC:21 AU: Lee, Dong-gun;Nishikawa, Atsushi;Terai, Yoshikazu;Fujiwara, Yasufumi;
12:85:7 Emission enhancement mechanism of GaN:Eu by Mg codoping
DOI:10.1063/1.4772950 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Sekiguchi, Hiroto;Takagi, Yasufumi;Otani, Tatsuki;Okada, Hiroshi;Wakahara, Akihiro;
12:85:8 The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers
DOI:10.1063/1.4879253 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Mitchell, B.;Poplawsky, J.;Lee, D.;Koizumi, A.;Fujiwara, Y.;Dierolf, V.;
12:85:9 Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels
DOI:10.1063/1.4846575 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Mitchell, B.;Lee, D.;Lee, D.;Fujiwara, Y.;Dierolf, V.;
12:85:10 Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy
DOI:10.1063/1.4800447 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Lee, Dong-gun;Wakamatsu, Ryuta;Koizumi, Atsushi;Terai, Yoshikazu;Poplawsky, Jonathan D.;Dierolf, Volkmar;Fujiwara, Yasufumi;
12:85:11 Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers
DOI:10.1016/j.optmat.2010.09.029 JN:OPTICAL MATERIALS PY:2011
TC:15 AU: Woodward, N.;Nishikawa, A.;Fujiwara, Y.;Dierolf, V.;
12:85:12 Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe
DOI:10.1103/PhysRevB.88.121202 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Mitchell, B.;Lee, D.;Lee, D.;Koizumi, A.;Poplawsky, J.;Fujiwara, Y.;Dierolf, V.;
12:85:13 Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites
DOI:10.1063/1.4816088 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Wakamatsu, Ryuta;Lee, Dong-gun;Koizumi, Atsushi;Dierolf, Volkmar;Fujiwara, Yasufumi;
12:85:14 Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy
DOI:10.1063/1.4891232 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Wakamatsu, R.;Timmerman, D.;Lee, D.;Koizumi, A.;Fujiwara, Y.;
12:85:15 Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping
DOI:10.1063/1.4793207 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Mishra, J. K.;Langer, T.;Rossow, U.;Shvarkov, S.;Wieck, A.;Hangleiter, A.;
12:85:16 Thermodynamics and Kinetics of Three Mg-H-V-N Complexes in Mg:GaN from Combined First-Principles Calculation and Experiment
DOI:10.1103/PhysRevLett.112.205501 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Lee, Donghwa;Mitchell, Brandon;Fujiwara, Y.;Dierolf, V.;
12:85:17 Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
DOI:10.1063/1.3489103 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Lorenz, K.;Alves, E.;Roqan, I. S.;O'Donnell, K. P.;Nishikawa, A.;Fujiwara, Y.;Bockowski, M.;
12:85:18 Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode
DOI:10.1063/1.4903234 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kashiwagi, Y.;Koizumi, A.;Takemura, Y.;Furuta, S.;Yamamoto, M.;Saitoh, M.;Takahashi, M.;Ohno, T.;Fujiwara, Y.;Murahashi, K.;Ohtsuka, K.;Nakamoto, M.;
12:85:19 Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges
DOI:10.1063/1.4900840 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ishii, Masashi;Koizumi, Atsushi;Fujiwara, Yasufumi;
12:85:20 Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
DOI:10.1063/1.3306736 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Chen, Shaoqiang;Uedono, Akira;Ishibashi, Shoji;Tomita, Shigeo;Kudo, Hiroshi;Akimoto, Katsuhiro;
12:85:21 The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN
DOI:10.1016/j.optmat.2010.07.002 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: O'Donnell, K. P.;Roqan, I. S.;Wang, Ke;Lorenz, K.;Alves, E.;Bockowski, M.;
12:85:22 Influence of atmosphere on photoluminescence properties of Eu-doped ZnO nanocrystals
DOI:10.1016/j.optmat.2010.09.011 JN:OPTICAL MATERIALS PY:2011
TC:8 AU: Ishizumi, Atsushi;Fujita, Satoshi;Yanagi, Hisao;
12:85:23 Sintering behaviour and translucency of dense Eu2O3 ceramics
DOI:10.1016/j.jeurceramsoc.2013.12.034 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:1 AU: Quesada, Adrian;del Campo, Adolfo;Fernandez, Jose F.;
12:86:1 Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
DOI:10.1021/nn300962z JN:ACS NANO PY:2012
TC:24 AU: Xia, Hui;Lu, Zhen-Yu;Li, Tian-Xin;Parkinson, Patrick;Liao, Zhi-Ming;Liu, Fu-Hao;Lu, Wei;Hu, Wei-Da;Chen, Ping-Ping;Xu, Hong-Yi;Zou, Jin;Jagadish, Chennupati;
12:86:2 Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
DOI:10.1021/nl303028u JN:NANO LETTERS PY:2012
TC:22 AU: Xu, Hongyi;Wang, Yong;Guo, Yanan;Liao, Zhiming;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Zou, Jin;
12:86:3 Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
DOI:10.1021/nl304237b JN:NANO LETTERS PY:2013
TC:25 AU: Guo, Ya-Nan;Xu, Hong-Yi;Auchterlonie, Graeme J.;Burgess, Tim;Joyce, Hannah J.;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;Shu, Hai-Bo;Chen, Xiao-Shuang;Lu, Wei;Kim, Yong;Zou, Jin;
12:86:4 Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures
DOI:10.1063/1.4807597 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Xu, Hong-Yi;Guo, Ya-Nan;Liao, Zhi-Ming;Sun, Wen;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;Zou, Jin;
12:86:5 Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured < 00(1)over-bar > In As Nanowires
DOI:10.1021/nl503556a JN:NANO LETTERS PY:2015
TC:4 AU: Zhang, Zhi;Zheng, Kun;Lu, Zhen-Yu;Chen, Ping-Ping;Lu, Wei;Zou, Jin;
12:86:6 Au impact on GaAs epitaxial growth on GaAs (111)(B) substrates in molecular beam epitaxy
DOI:10.1063/1.4792053 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Liao, Zhi-Ming;Chen, Zhi-Gang;Lu, Zhen-Yu;Xu, Hong-Yi;Guo, Ya-Nan;Sun, Wen;Zhang, Zhi;Yang, Lei;Chen, Ping-Ping;Lu, Wei;Zou, Jin;
12:86:7 Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
DOI:10.1063/1.4834377 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Sun, Wen;Guo, Yanan;Xu, Hongyi;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;Zou, Jin;
12:86:8 Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
DOI:10.1063/1.4818682 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Zhang, Zhi;Lu, Zhen-Yu;Chen, Ping-Ping;Xu, Hong-Yi;Guo, Ya-Nan;Liao, Zhi-Ming;Shi, Sui-Xing;Lu, Wei;Zou, Jin;
12:86:9 Shape-Controlled Au Particles for InAs Nanowire Growth
DOI:10.1021/nl2036035 JN:NANO LETTERS PY:2012
TC:13 AU: Lin, Pin Ann;Liang, Dong;Reeves, Samantha;Gao, Xuan P. A.;Sankaran, R. Mohan;
12:86:10 Size effect of Au seeds on structure of Au-Pt bimetallic nanoparticles
DOI:10.1016/j.matlet.2011.05.047 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Chen, Youwei;Wang, Wei Guo;Zhou, Shenghu;
12:86:11 Behavior of Au-Si droplets in Si(001) at high temperatures
DOI:10.1063/1.4739413 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Shao, Y. M.;Nie, T. X.;Jiang, Z. M.;Zou, J.;
12:86:12 Coexistence of Vapor-Liquid-Solid and Vapor-Solid-Solid Growth Modes in Pd-Assisted InAs Nanowires
DOI:10.1002/smll.201000811 JN:SMALL PY:2010
TC:10 AU: Heun, Stefan;Radha, Boya;Ercolani, Daniele;Kulkarni, Giridhar U.;Rossi, Francesca;Grillo, Vincenzo;Salviati, Giancarlo;Beltram, Fabio;Sorba, Lucia;
12:86:13 Parallel-aligned GaAs nanowires with < 110 > orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode
DOI:10.1088/0957-4484/21/9/095607 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Zhang, Guoqiang;Tateno, Kouta;Gotoh, Hideki;Nakano, Hidetoshi;
12:87:1 General hypothesis for nanowire synthesis. I. Extended principles and evidential (experimental and theoretical) demonstration
DOI:10.1063/1.3608127 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Mohammad, S. Noor;
12:87:2 Why self-catalyzed nanowires are most suitable for large-scale hierarchical integrated designs of nanowire nanoelectronics
DOI:10.1063/1.3624585 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Mohammad, S. Noor;
12:87:3 Unified platform for the chemical reactivity and catalytic potential of catalyst nanoparticles of even very diverse structures and characteristics for nanotube (including carbon nanotube) syntheses
DOI:10.1039/c2jm33134a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Mohammad, S. Noor;
12:87:4 Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors
DOI:10.1088/0957-4484/24/45/455201 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Mohammad, S. Noor;
12:87:5 General hypothesis for nanowire synthesis. II: Universality
DOI:10.1063/1.3608129 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Mohammad, S. Noor;
12:87:6 Quantum-confined nanowires as vehicles for enhanced electrical transport
DOI:10.1088/0957-4484/23/28/285707 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Mohammad, S. Noor;
12:87:7 General hypothesis governing the growth of single-crystal nanowires
DOI:10.1063/1.3311800 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Mohammad, S. Noor;
12:87:8 General hypothesis and shell model for the synthesis of semiconductor nanotubes, including carbon nanotubes
DOI:10.1063/1.3474650 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Mohammad, S. Noor;
12:87:9 Morphology control of gallium nitride grown on silicon nanoporous pillar array: From cone-strings to nanowires
DOI:10.1016/j.jcrysgro.2012.04.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Han, Chang Bao;He, Chuan;Li, Xin Jian;
12:87:10 Thermodynamic Imbalance, Surface Energy, and Segregation Reveal the True Origin of Nanotube Synthesis
DOI:10.1002/adma.201103576 JN:ADVANCED MATERIALS PY:2012
TC:6 AU: Mohammad, S. Noor;
12:87:11 General theoretical model for the vapor-phase growth and growth rate of semiconductor nanowires
DOI:10.1116/1.3289321 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:8 AU: Mohammad, S. Noor;
12:87:12 Site-selective synthesis of in situ Ni-filled multi-walled carbon nanotubes using Ni(salen) as a catalyst source
DOI:10.1088/0957-4484/21/41/415605 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Sengupta, Joydip;Jana, Avijit;Singh, N. D. Pradeep;Mitra, C.;Jacob, Chacko;
12:87:13 A possible role of the dipole moment of the catalyst droplet in nanotube growth, alignment, chirality, and characteristics
DOI:10.1088/0957-4484/23/8/085701 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Mohammad, S. Noor;
12:87:14 Decahedral and icosahedral twin crystals of silver: Formation and morphology evolution
DOI:10.1016/j.jcrysgro.2011.01.068 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Li, C. R.;Lu, N. P.;Xu, Q.;Mei, J.;Dong, W. J.;Fu, J. L.;Cao, Z. X.;
12:87:15 Nickel/carbon core/shell nanotubes: Lanthanum nickel alloy catalyzed synthesis, characterization and studies on their ferromagnetic and lithium-ion storage properties
DOI:10.1016/j.materresbull.2014.09.033 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Rajesh, John Anthuvan;Pandurangan, Arumugam;Senthil, Chenrayan;Sasidharan, Manickam;
12:87:16 Fast vapor phase growth of SiO2 nanowires via surface-flow on Ag core/SiO2 shell structure
DOI:10.1063/1.3700232 JN:AIP ADVANCES PY:2012
TC:2 AU: Gao, Lei;Ji, Ailing;Lu, Nianpeng;Li, Chaorong;Cao, Zexian;
12:87:17 Polyhedral to nearly spherical morphology transformation of silver microcrystals grown from vapor phase
DOI:10.1016/j.jcrysgro.2010.10.221 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Li, C. R.;Lu, N. P.;Mei, J.;Dong, W. J.;Zheng, Y. Y.;Gao, L.;Tsukamoto, K.;Cao, Z. X.;
12:87:18 Tunable filling rate and increased ferromagnetic properties of nickel-filled carbon nanotubes synthesized from a Pauli paramagnetic lanthanum nickel (LaNi5) alloy catalyst
DOI:10.1039/c3tc31247j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:4 AU: Rajesh, John Anthuvan;Pandurangan, Arumugam;
12:88:1 Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors
DOI:10.1063/1.3600061 JN:APPLIED PHYSICS LETTERS PY:2011
TC:27 AU: Gallo, Eric M.;Chen, Guannan;Currie, Marc;McGuckin, Terrence;Prete, Paola;Lovergine, Nico;Nabet, Bahram;Spanier, Jonathan E.;
12:88:2 Surface Plasmon-Enhanced Nanopillar Photodetectors
DOI:10.1021/nl202732r JN:NANO LETTERS PY:2011
TC:28 AU: Senanayake, Pradeep;Hung, Chung-Hong;Shapiro, Joshua;Lin, Andrew;Liang, Baolai;Williams, Benjamin S.;Huffaker, D. L.;
12:88:3 Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts
DOI:10.1088/0957-4484/23/46/465701 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Persano, Anna;Taurino, Antonietta;Prete, Paola;Lovergine, Nico;Nabet, Bahram;Cola, Adriano;
12:88:4 Polarization anisotropy of individual core/shell GaAs/AlGaAs nanowires by photocurrent spectroscopy
DOI:10.1063/1.3578189 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Persano, Anna;Nabet, Bahram;Taurino, Antonietta;Prete, Paola;Lovergine, Nico;Cola, Adriano;
12:88:5 Nanoscale three-dimensional reconstruction of electric and magnetic stray fields around nanowires
DOI:10.1063/1.4900826 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lubk, A.;Wolf, D.;Simon, P.;Wang, C.;Sturm, S.;Felser, C.;
12:88:6 Direct Measurement of Band Edge Discontinuity in Individual Core-Shell Nanowires by Photocurrent Spectroscopy
DOI:10.1021/nl401737u JN:NANO LETTERS PY:2013
TC:4 AU: Chen, Guannan;Sun, Guan;Ding, Yujie J.;Prete, Paola;Miccoli, Ilio;Lovergine, Nico;Shtrikman, Hadas;Kung, Patrick;Livneh, Tsachi;Spanier, Jonathan E.;
12:88:7 On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
DOI:10.1063/1.3441404 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Chen, Guannan;Gallo, Eric M.;Burger, Joan;Nabet, Bahram;Cola, Adriano;Prete, Paola;Lovergine, Nico;Spanier, Jonathan E.;
12:88:8 Enhanced Photocurrent and Dynamic Response in Vertically Aligned In2S3/Ag Core/Shell Nanorod Array Photoconductive Devices
DOI:10.1021/am501481w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Cansizoglu, Hilal;Cansizoglu, Mehmet F.;Watanabe, Fumiya;Karabacak, Tansel;
12:88:9 Subsurface Imaging of Coupled Carrier Transport in GaAs/AlGaAs Core-Shell Nanowires
DOI:10.1021/nl502995q JN:NANO LETTERS PY:2015
TC:0 AU: Chen, Guannan;McGuckin, Terrence;Hawley, Christopher J.;Gallo, Eric M.;Prete, Paola;Miccoli, Ilio;Lovergine, Nico;Spanier, Jonathan E.;
12:88:10 Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires
DOI:10.1103/PhysRevB.90.125404 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Lubk, A.;Wolf, D.;Prete, P.;Lovergine, N.;Niermann, T.;Sturm, S.;Lichte, H.;
12:88:11 Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires
DOI:10.1063/1.3604793 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Wolf, D.;Lichte, H.;Pozzi, G.;Prete, P.;Lovergine, N.;
12:88:12 Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors
DOI:10.1021/nl303837y JN:NANO LETTERS PY:2012
TC:6 AU: Senanayake, Pradeep;Hung, Chung-Hong;Farrell, Alan;Ramirez, David A.;Shapiro, Joshua;Li, Chi-Kang;Wu, Yuh-Renn;Hayat, Majeed M.;Huffaker, Diana L.;
12:88:13 Tunable Hot-Electron Transfer Within a Single Core-Shell Nanowire
DOI:10.1103/PhysRevLett.107.156802 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:1 AU: Chen, Guannan;Gallo, Eric M.;Leaffer, Oren D.;McGuckin, Terrence;Prete, Paola;Lovergine, Nico;Spanier, Jonathan E.;
12:88:14 Tomographic investigation of fermi level pinning at focused ion beam milled semiconductor surfaces
DOI:10.1063/1.4858957 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Wolf, D.;Lubk, A.;Lenk, A.;Sturm, S.;Lichte, H.;
12:88:15 Nanoscale three-dimensional reconstruction of elastic and inelastic mean free path lengths by electron holographic tomography
DOI:10.1063/1.4900406 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lubk, A.;Wolf, D.;Kern, F.;Roeder, F.;Prete, P.;Lovergine, N.;Lichte, H.;
12:88:16 Impact of electron irradiation on electron holographic potentiometry
DOI:10.1063/1.4894718 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Park, J. B.;Niermann, T.;Berger, D.;Knauer, A.;Koslow, I.;Weyers, M.;Kneissl, M.;Lehmann, M.;
12:89:1 Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires
DOI:10.1088/0957-4484/23/19/194011 JN:NANOTECHNOLOGY PY:2012
TC:18 AU: Yu, Linwei;O'Donnell, Benedict;Foldyna, Martin;Roca i Cabarrocas, Pere;
12:89:2 Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition
DOI:10.1007/s00339-010-5802-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:20 AU: Zardo, I.;Conesa-Boj, S.;Estrade, S.;Yu, L.;Peiro, F.;Roca i Cabarrocas, P.;Morante, J. R.;Arbiol, J.;Fontcuberta i Morral, A.;
12:89:3 Stability and evolution of low-surface-tension metal catalyzed growth of silicon nanowires
DOI:10.1063/1.3569817 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Yu, Linwei;Fortuna, Franck;O'Donnell, Benedict;Patriache, Gilles;Roca i Cabarrocas, Pere;
12:89:4 Bismuth-Catalyzed and Doped Silicon Nanowires for One-Pump-Down Fabrication of Radial Junction Solar Cells
DOI:10.1021/nl3017187 JN:NANO LETTERS PY:2012
TC:19 AU: Yu, Linwei;Fortuna, Franck;O'Donnell, Benedict;Jeon, Taewoo;Foldyna, Martin;Picardi, Gennaro;Roca i Cabarrocas, Pere;
12:89:5 Core-shell structure and unique faceting of Sn-catalyzed silicon nanowires
DOI:10.1063/1.3464557 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Yu, Linwei;O'Donnell, Benedict;Maurice, Jean-Luc;Roca i Cabarrocas, Pere;
12:89:6 Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires
DOI:10.1088/0957-4484/24/27/275401 JN:NANOTECHNOLOGY PY:2013
TC:10 AU: Yu, Linwei;Rigutti, Lorenzo;Tchernycheva, Maria;Misra, Soumyadeep;Foldyna, Martin;Picardi, Gennaro;Cabarrocas, Pere Roca i;
12:89:7 Silicon nanowire solar cells grown by PECVD
DOI:10.1016/j.jnoncrysol.2011.11.026 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:18 AU: O'Donnell, Benedict;Yu, Linwei;Foldyna, Martin;Roca i Cabarrocas, Pere;
12:89:8 All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application
DOI:10.1016/j.solmat.2010.06.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:16 AU: Yu, Linwei;O'Donnell, Benedict;Alet, Pierre-Jean;Roca i Cabarrocas, Pere;
12:89:9 High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires
DOI:10.1016/j.solmat.2013.07.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:23 AU: Misra, Soumyadeep;Yu, Linwei;Foldyna, Martin;Roca i Cabarrocas, Pere;
12:89:10 Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates
DOI:10.1007/s00339-013-7567-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Jennings, Philip;Jiang, Zhong-Tao;Wyatt, Nicholas M. W.;Parlevliet, David;Creagh, Christine;Yin, Chun-Yang;Widjaja, Hantarto;Mondinos, Nick;
12:89:11 The effects of substrate self-biasing on the growth of Sn-catalysed silicon nanowires grown at low pressure
DOI:10.1007/s10853-013-7898-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:1 AU: Ball, J.;Mendis, B. G.;Reehal, H. S.;
12:89:12 Competition between uncatalyzed and catalyzed growth during the plasma synthesis of Si nanowires and its role on their optical properties
DOI:10.1063/1.4809557 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Garozzo, C.;La Magna, A.;Mannino, G.;Privitera, V.;Scalese, S.;Sberna, P. M.;Simone, F.;Puglisi, R. A.;
12:89:13 Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism
DOI:10.1155/2014/362798 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Gomez-Martinez, Arancha;Marquez, Francisco;Elizalde, Eduardo;Morant, Carmen;
12:89:14 Theoretical short-circuit current density for different geometries and organizations of silicon nanowires in solar cells
DOI:10.1016/j.solmat.2012.10.014 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:11 AU: Foldyna, Martin;Yu, Linwei;Roca i Cabarrocas, Pere;
12:89:15 Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts
DOI:10.1007/s11051-011-0478-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:7 AU: Parlevliet, David;Jennings, Philip;
12:89:16 Controlling the diameter of silicon nanowires grown using a tin catalyst
DOI:10.1016/j.mssp.2012.07.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Al-Taay, H. F.;Mahdi, M. A.;Parlevliet, D.;Jennings, P.;
12:89:17 Gallium-assisted growth of silicon nanowires by electron cyclotron resonance plasmas
DOI:10.1088/0957-4484/21/45/455602 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Hernandez, M. J.;Cervera, M.;Ruiz, E.;Pau, J. L.;Piqueras, J.;Avella, M.;Jimenez, J.;
12:89:18 The influence of substrate orientation on the density of silicon nanowires grown on multicrystalline and single crystal substrates by electron cyclotron resonance chemical vapour deposition
DOI:10.1016/j.tsf.2011.10.019 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Ball, J.;Reehal, H. S.;
12:89:19 A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process
DOI:10.1016/j.apsusc.2012.04.153 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Ho, Tzuen-Wei;Hong, Franklin Chau-Nan;
12:89:20 Photovoltaic characteristics of silicon nanowire arrays synthesized by vapor-liquid-solid process
DOI:10.1016/j.solmat.2010.04.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:7 AU: Kuo, Cheng Yung;Gau, Chie;Dai, Bau Tong;
12:90:1:1 Nonpolar GaN films on high-index silicon: Lattice matching by design
DOI:10.1103/PhysRevB.87.045314 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Kutana, Alex;Erwin, Steven C.;
12:90:1:2 Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces
DOI:10.1016/j.jcrysgro.2009.10.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:14 AU: Reiher, F.;Dadgar, A.;Blaesing, J.;Wieneke, M.;Krost, A.;
12:90:1:3 Eliminating stacking faults in semi-polar GaN by AlN interlayers
DOI:10.1063/1.3610467 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Dadgar, A.;Ravash, R.;Veit, P.;Schmidt, G.;Mueller, M.;Dempewolf, A.;Bertram, F.;Wieneke, M.;Christen, J.;Krost, A.;
12:90:1:4 Epitaxial Interfaces between Crystallographically Mismatched Materials
DOI:10.1103/PhysRevLett.107.026102 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:7 AU: Erwin, Steven C.;Gao, Cunxu;Roder, Claudia;Laehnemann, Jonas;Brandt, Oliver;
12:90:1:5 Semipolar single component GaN on planar high index Si(11h) substrates
DOI:10.1063/1.3492835 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Ravash, Roghaiyeh;Blaesing, Juergen;Dadgar, Armin;Krost, Alois;
12:90:1:6 Epitaxial lateral overgrowth of non-polar GaN(1 (1)over-bar 0 0) on Si(112) patterned substrates by MOCVD
DOI:10.1016/j.jcrysgro.2010.11.152 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Izyumskaya, N.;Liu, S. J.;Avrutin, V.;Ni, X. F.;Wu, M.;Oezguer, Ue.;Metzner, S.;Bertram, F.;Christen, J.;Zhou, L.;Smith, David J.;Morkoc, H.;
12:90:1:7 MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
DOI:10.1016/j.jcrysgro.2012.08.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Ravash, Roghaiyeh;Dadgar, Armin;Bertram, Frank;Dempewolf, Anja;Metzner, Sebastian;Hempel, Thomas;Christen, Juergen;Krost, Alois;
12:90:1:8 Optical studies of strain and defect distribution in semipolar (1(1)over-bar01) GaN on patterned Si substrates
DOI:10.1063/1.4821343 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Izyumskaya, N.;Zhang, F.;Okur, S.;Selden, T.;Avrutin, V.;Ozgur, U.;Metzner, S.;Karbaum, C.;Bertram, F.;Christen, J.;Morkoc, H.;
12:90:1:9 Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1(1)over-bar01) GaN revealed from spatially resolved luminescence
DOI:10.1063/1.4826579 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Okur, S.;Metzner, S.;Izyumskaya, N.;Zhang, F.;Avrutin, V.;Karbaum, C.;Bertram, F.;Christen, J.;Morkoc, H.;Oezguer, Ue;
12:90:1:10 GaN growth on Si pillar arrays by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.10.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Won, Dongjin;Weng, Xiaojun;Yuwen, Yu A.;Ke, Yue;Kendrick, Chito;Shen, Haoting;Mayer, Theresa S.;Redwing, Joan M.;
12:90:1:11 Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.10.146 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Lieten, R. R.;Richard, O.;Degroote, S.;Leys, M.;Bender, H.;Borghs, G.;
12:90:1:12 Packings of Os layers for the development of L1(0) order of FePt in nanoscale [Os-FePt](n) multilayer systems
DOI:10.1063/1.4800985 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Su, T. T.;Hsiao, Ching-Hung;Lo, Shen-Chuan;Ouyang, Wen;Li, Tzu-Yuan;Ouyang, H.;Yao, Y. D.;
12:90:2:1 Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4841655 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Shen, X. Q.;Takahashi, T.;Rong, X.;Chen, G.;Wang, X. Q.;Shen, B.;Matsuhata, H.;Ide, T.;Shimizu, M.;
12:90:2:2 Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer
DOI:10.1063/1.4737874 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Shen, X. Q.;Takahashi, T.;Kawashima, H.;Ide, T.;Shimizu, M.;
12:90:2:3 Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.10.170 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:23 AU: Schenk, H. P. D.;Frayssinet, E.;Bayard, A.;Rondi, D.;Cordier, Y.;Kennard, M.;
12:90:2:4 Growth of GaN based structures on Si(110) by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.06.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:17 AU: Cordier, Y.;Moreno, J. -C.;Baron, N.;Frayssinet, E.;Chauveau, J. -M.;Nemoz, M.;Chenot, S.;Damilano, B.;Semond, F.;
12:90:2:5 InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
DOI:10.1063/1.3684557 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Blake, Adam H.;Caselli, Derek;Durot, Christopher;Mueller, Jason;Parra, Eduardo;Gilgen, Joseph;Boley, Allison;Smith, David J.;Tsong, Ignatius S. T.;Roberts, John C.;Piner, Edwin;Linthicum, Kevin;Cook, James W., Jr.;Koleske, Daniel D.;Crawford, Mary H.;Fischer, Arthur J.;
12:90:2:6 Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4729045 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Aidam, Rolf;Diwo, Elke;Rollbuehler, Nicola;Kirste, Lutz;Benkhelifa, Fouad;
12:90:2:7 Effect of n-GaN thickness on internal quantum efficiency in InxGa1-xN multiple-quantum-well light emitting diodes grown on Si (111) substrate
DOI:10.1063/1.3596592 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Lu, L.;Zhu, Y. H.;Chen, Z. T.;Egawa, T.;
12:90:2:8 Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate
DOI:10.1063/1.3602919 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Selvaraj, S. Lawrence;Watanabe, Arata;Egawa, Takashi;
12:90:2:9 Dissociation of trimethylgallium on the ZrB2(0001) surface
DOI:10.1116/1.4826881 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Manandhar, Kedar;Trenary, Michael;Otani, Shigeki;Zapol, Peter;
12:90:3:1 Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films
DOI:10.1016/j.jcrysgro.2014.04.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Cordier, Yvon;Frayssinet, Eric;Portail, Marc;Zielinski, Marcin;Chassagne, Thierry;Korytov, Maxim;Courville, Aimeric;Roy, Sebastien;Nemoz, Maud;Chmielowska, Magdalena;Vennegues, Philippe;Schenk, H. P. David;Kennard, Mark;Bavard, Alexis;Rondi, Daniel;
12:90:3:2 Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si
DOI:10.1166/jctn.2012.2601 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:1 AU: Pezoldt, J.;Kulikov, D. V.;Kharlamov, V. S.;Lubov, M. N.;Trushin, Yu. V.;
12:90:3:3 Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si
DOI:10.1016/j.jcrysgro.2010.10.179 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Abe, Yoshihisa;Ohmori, Noriko;Watanabe, Arata;Komiyama, Jun;Suzuki, Syunichi;Fujimori, Hiroyuki;Nakanishi, Hideo;Egawa, Takashi;
12:90:3:4 AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
DOI:10.1016/j.tsf.2011.07.003 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Tonisch, K.;Jatal, W.;Niebelschuetz, F.;Romanus, H.;Baumann, U.;Schwierz, F.;Pezoldt, J.;
12:90:3:5 Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
DOI:10.1016/j.tsf.2011.06.090 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Bantaculo, Rolando;Saitoh, Eiji;Miyamoto, Yu;Handa, Hiroyuki;Suemitsu, Maki;
12:90:4:1 Strain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate
DOI:10.1063/1.4824351 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Chen, Chih-Yen;Liu, Zhan Hui;Lin, Chun-Han;Su, Chia-Ying;Chang, Ta-Wei;Shih, Pei-Ying;Chen, Horng-Shyang;Liao, Che-Hao;Hsieh, Chieh;Chou, Wang-Hsien;Shen, Chen-Hung;Kiang, Yean-Woei;Yang, C. C.;
12:90:4:2 Microstructure of gallium nitride films grown on silicon (110)
DOI:10.1063/1.3449126 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Ruiz-Zepeda, F.;Contreras, O.;Dadgar, A.;Krost, A.;
12:90:4:3 On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
DOI:10.1016/j.jcrysgro.2010.08.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Mauder, C.;Booker, I. D.;Fahle, D.;Boukiour, H.;Behmenburg, H.;Khoshroo, L. Rahimzadeh;Woitok, J. F.;Vescan, A.;Heuken, M.;Kalisch, H.;Jansen, R. H.;
12:90:5:1 Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate
DOI:10.1016/j.jcrysgro.2010.09.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Drechsel, P.;Riechert, H.;
12:90:5:2 Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates
DOI:10.1016/j.jcrysgro.2012.08.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Fang, Hao;Takaya, Yoshifumi;Miyake, Hideto;Hiramatsu, Kazumasa;Asamura, Hidetoshi;Kawamura, Keisuke;Oku, Hidehiko;
12:90:5:3 Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers
DOI:10.1063/1.4864780 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Fang, H.;Katagiri, M.;Miyake, H.;Hiramatsu, K.;Oku, H.;Asamura, H.;Kawamura, K.;
12:91:1 The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires
DOI:10.1063/1.4894707 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Ning, Feng;Wang, Dan;Tang, Li-Ming;Zhang, Yong;Chen, Ke-Qiu;
12:91:2 Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate
DOI:10.1088/0957-4484/22/40/405702 JN:NANOTECHNOLOGY PY:2011
TC:18 AU: Alouane, M. H. Hadj;Anufriev, R.;Chauvin, N.;Khmissi, H.;Naji, K.;Ilahi, B.;Maaref, H.;Patriarche, G.;Gendry, M.;Bru-Chevallier, C.;
12:91:3 Origination of the direct-indirect band gap transition in strained wurtzite and zinc-blende GaAs nanowires: A first principles study
DOI:10.1103/PhysRevB.87.115308 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Peng, Xihong;Copple, Andrew;
12:91:4 Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires
DOI:10.1063/1.4894442 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Song, Changsheng;Wang, Jiqing;Lin, Weixian;Mao, Huibing;Zhao, Qiang;Yang, Pingxiong;Xing, Huaizhong;
12:91:5 Diameter dependence of mechanical, electronic, and structural properties of InAs and InP nanowires: A first-principles study
DOI:10.1103/PhysRevB.81.075408 JN:PHYSICAL REVIEW B PY:2010
TC:19 AU: dos Santos, Claudia L.;Piquini, Paulo;
12:91:6 Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
DOI:10.1088/0957-4484/24/8/085603 JN:NANOTECHNOLOGY PY:2013
TC:12 AU: Haas, F.;Sladek, K.;Winden, A.;von der Ahe, M.;Weirich, T. E.;Rieger, T.;Lueth, H.;Gruetzmacher, D.;Schaepers, Th;Hardtdegen, H.;
12:91:7 Manipulation of band structures in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires
DOI:10.1063/1.4821507 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Song, Changsheng;Wang, Jiqing;Lin, Weixian;Mao, Huibing;Zhao, Qiang;Yang, Pingxiong;Xing, Huaizhong;
12:91:8 Electronic and structural properties of InAs/InP core/shell nanowires: A first principles study
DOI:10.1063/1.3692440 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: dos Santos, Claudia L.;Piquini, Paulo;
12:91:9 Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain
DOI:10.1063/1.4718026 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Copple, Andrew;Ralston, Nathaniel;Peng, Xihong;
12:91:10 Tailoring electronic properties of InAs nanowires by surface functionalization
DOI:10.1063/1.3662386 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Shu, Haibo;Liang, Pei;Wang, Le;Chen, Xiaoshuang;Lu, Wei;
12:91:11 First-principles study of quantum confinement and surface effects on the electronic properties of InAs nanowires
DOI:10.1063/1.4842735 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Ning, Feng;Tang, Li-Ming;Zhang, Yong;Chen, Ke-Qiu;
12:91:12 First-principles study of the electronic properties of wurtzite, zinc-blende, and twinned InP nanowires
DOI:10.1088/0957-4484/21/50/505709 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Li, Dengfeng;Wang, Zhiguo;Gao, Fei;
12:91:13 Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations
DOI:10.1016/j.commatsci.2010.10.011 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:1 AU: Sun, Wei-Feng;Li, Mei-Cheng;Zhao, Lian-Cheng;
12:92:1:1 Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer
DOI:10.1016/j.jcrysgro.2012.04.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:15 AU: Tomida, D.;Kagamitani, Y.;Bao, Q.;Hazu, K.;Sawayama, H.;Chichibu, S. F.;Yokoyama, C.;Fukuda, T.;Ishiguro, T.;
12:92:1:2 Effect of halogen species of acidic mineralizer on solubility of GaN in supercritical ammonia
DOI:10.1016/j.jcrysgro.2011.04.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Tomida, Daisuke;Kuribayashi, Taketo;Suzuki, Kousuke;Kagamitani, Yuji;Ishiguro, Toru;Fukuda, Tsuguo;Yokoyama, Chiaki;
12:92:1:3 Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer
DOI:10.1016/j.jcrysgro.2010.07.065 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Kagamitani, Y.;Kuribayashi, T.;Hazu, K.;Onuma, T.;Tomida, D.;Simura, R.;Chichibu, S. F.;Sugiyama, K.;Yokoyama, C.;Ishiguro, T.;Fukuda, T.;
12:92:1:4 Solubility of GaN in supercritical ammonia with ammonium chloride as a mineralizer
DOI:10.1016/j.jcrysgro.2010.07.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Tomida, Daisuke;Kuroda, Kiyoshi;Hoshino, Naruhiro;Suzuki, Kousuke;Kagamitani, Yuji;Ishiguro, Toru;Fukuda, Tsuguo;Yokoyama, Chiaki;
12:92:1:5 Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growth
DOI:10.1016/j.jcrysgro.2014.06.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Zhang, Shiyu;Alt, Nicolas S. A.;Schluecker, Eberhard;Niewa, Rainer;
12:92:1:6 Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
DOI:10.1016/j.jcrysgro.2015.02.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Schimmel, Saskia;Lindner, Michael;Steigerwald, Thomas G.;Hertweck, Benjamin;Richter, Theresia M. M.;Kuenecke, Ulrike;Alt, Nicolas S. A.;Niewa, Rainer;Schluecker, Eberhard;Wellmann, Peter J.;
12:92:1:7 Ammonothermal crystal growth of gallium nitride - A brief discussion of critical issues
DOI:10.1016/j.jcrysgro.2010.04.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Ehrentraut, Dirk;Fukuda, Tsuguo;
12:92:1:8 Development of a novel in situ monitoring technology for ammonothermal reactors
DOI:10.1016/j.jcrysgro.2011.12.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Alt, Nicolas S. A.;Meissner, Elke;Schluecker, Eberhard;
12:92:1:9 Ammonothermal growth of GaN on a self-nucleated GaN seed crystal
DOI:10.1016/j.jcrysgro.2014.06.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Bao, Quanxi;Saito, Makoto;Hazu, Kouji;Kagamitani, Yuji;Kurimoto, Kouhei;Tomida, Daisuke;Qiao, Kun;Ishiguro, Tohru;Yokoyama, Chiaki;Chichibu, Shigefusa F.;
12:92:1:10 Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis
DOI:10.1016/j.jcrysgro.2012.03.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Tomida, D.;Chichibu, S. F.;Kagamitani, Y.;Bao, Q.;Hazu, K.;Simura, R.;Sugiyama, K.;Yokoyama, C.;Ishiguro, T.;Fukuda, T.;
12:92:2:1 Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
DOI:10.1016/j.jcrysgro.2013.01.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Pimputkar, S.;Kawabata, S.;Speck, J. S.;Nakamura, S.;
12:92:2:2 Vacancy-hydrogen complexes in ammonothermal GaN
DOI:10.1016/j.jcrysgro.2014.06.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Tuomisto, F.;Kuittinen, T.;Zajac, M.;Doradzinski, R.;Wasik, D.;
12:92:2:3 Vacancy defects in bulk ammonothermal GaN crystals
DOI:10.1016/j.jcrysgro.2010.04.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Tuomisto, F.;Maki, J. -M.;Zajac, M.;
12:92:2:4 Development of GaN wafers for solid-state lighting via the ammonothermal method
DOI:10.1016/j.jcrysgro.2011.12.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Letts, Edward;Hashimoto, Tadao;Ikari, Masanori;Nojima, Yoshihiro;
12:92:2:5 Defect structure of a free standing GaN wafer grown by the ammonothermal method
DOI:10.1016/j.jcrysgro.2014.08.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Sintonen, Sakari;Suihkonen, Sami;Jussila, Henri;Lipsanen, Harri;Tuomi, Turkka O.;Letts, Edward;Hoff, Sierra;Hashimoto, Tadao;
12:92:2:6 Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
DOI:10.1063/1.4893901 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Sintonen, Sakari;Rudzinski, Mariusz;Suihkonen, Sami;Jussila, Henri;Knetzger, Michael;Meissner, Elke;Danilewsky, Andreas;Tuomi, Turkka O.;Lipsanen, Harri;
12:92:3:1 Improved growth rates and purity of basic ammonothermal GaN
DOI:10.1016/j.jcrysgro.2014.06.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:7 AU: Pimputkar, S.;Kawabata, S.;Speck, J. S.;Nakamura, S.;
12:92:3:2 Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates
DOI:10.1016/j.jcrysgro.2015.06.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Kucharski, R.;Zajac, M.;Puchalski, A.;Sochacki, T.;Bockowski, M.;Weyher, J. L.;Iwinska, M.;Serafinczuk, J.;Kudrawiec, R.;Siemiatkowski, Z.;
12:92:3:3 High-temperature acidic ammonothermal method for GaN crystal growth
DOI:10.1016/j.jcrysgro.2013.09.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Yoshida, Kazuo;Aoki, Kensuke;Fukuda, Tsuguo;
12:92:4:1 Ammonothermal growth of high-quality GaN crystals on HVPE template seeds
DOI:10.1016/j.jcrysgro.2010.10.080 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Wang, Buguo;Bliss, David;Suscavage, Michael;Swider, Stacy;Lancto, Robert;Lynch, Candace;Weyburne, David;Li, Ti;Ponce, Fernando A.;
12:92:4:2 Ammonothermal GaN: Morphology and properties
DOI:10.1016/j.jcrysgro.2009.12.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Bliss, David;Wang, Buguo;Suscavage, Michael;Lancto, Robert;Swider, Stacy;Eikenberry, Wayne;Lynch, Candace;
12:92:4:3 Inversion domains and parallel growth in ammonothermally grown GaN crystals
DOI:10.1016/j.jcrysgro.2010.04.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Wang, Buguo;Suscavage, Michael;Bliss, David F.;Jimenez, J.;
12:92:5:1 Improvement of crystal quality in ammonothermal growth of bulk GaN
DOI:10.1016/j.jcrysgro.2010.04.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Hashimoto, Tadao;Letts, Edward;Ikari, Masanori;Nojima, Yoshihiro;
12:92:5:2 Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method
DOI:10.1016/j.jcrysgro.2011.01.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Nojima, Yoshihiro;Ikari, Masanori;Letts, Edward;Hashimoto, Tadao;
12:92:5:3 Development of GaN wafers via the ammonothermal method
DOI:10.1016/j.crysgro.2014.06.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Letts, Edward;Hashimoto, Tadao;Hoff, Sierra;Key, Daryl;Male, Keith;Michaels, Mathew;
12:92:6:1 Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor
DOI:10.1016/j.jcrysgro.2011.01.103 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Carbajal Arizaga, Gregorio Guadalupe;Soto Herrera, Gerardo;Fischer, Alec M.;Contreras Lopez, Oscar Edel;
12:92:6:2 Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H-2
DOI:10.1016/j.jcrysgro.2010.05.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Zervos, Matthew;Othonos, Andreas;
12:92:6:3 Synthesis of L-cystine nanotubes by alkalinization of L-cysteine in the presence of gallium nitride
DOI:10.1016/j.jcrysgro.2013.09.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Carbajal Arizaga, Gregorio Guadalupe;
12:92:7:1 Feasibility of density and viscosity measurements under ammonothermal conditions
DOI:10.1016/j.jcrysgro.2014.06.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Steigerwald, Thomas G.;Alt, Nicolas S. A.;Hertweck, Benjamin;Schluecker, Eberhard;
12:92:7:2 Numerical simulation of ammonothermal growth processes of GaN crystals
DOI:10.1016/j.jcrysgro.2010.10.218 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Jiang, Yan-Ni;Chen, Qi-Sheng;Prasad, V.;
12:93:1 Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1-xN
DOI:10.1103/PhysRevB.87.195210 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Landmann, M.;Rauls, E.;Schmidt, W. G.;Roeppischer, Marcus;Cobet, Christoph;Esser, Norbert;Schupp, Thorsten;As, Donat J.;Feneberg, Martin;Goldhahn, Ruediger;
12:93:2 Band offsets in cubic GaN/AlN superlattices
DOI:10.1103/PhysRevB.83.195301 JN:PHYSICAL REVIEW B PY:2011
TC:26 AU: Mietze, C.;Landmann, M.;Rauls, E.;Machhadani, H.;Sakr, S.;Tchernycheva, M.;Julien, F. H.;Schmidt, W. G.;Lischka, K.;As, D. J.;
12:93:3 Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range
DOI:10.1103/PhysRevB.83.075313 JN:PHYSICAL REVIEW B PY:2011
TC:23 AU: Machhadani, H.;Tchernycheva, M.;Sakr, S.;Rigutti, L.;Colombelli, R.;Warde, E.;Mietze, C.;As, D. J.;Julien, F. H.;
12:93:4 Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes
DOI:10.1063/1.3488819 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Zainal, N.;Novikov, S. V.;Mellor, C. J.;Foxon, C. T.;Kent, A. J.;
12:93:5 Electron-electron and electron-phonon correlation effects on the finite-temperature electronic and optical properties of zinc-blende GaN
DOI:10.1103/PhysRevB.89.085202 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Kawai, Hiroki;Yamashita, Koichi;Cannuccia, Elena;Marini, Andrea;
12:93:6 Optical properties of cubic GaN from 1 to 20 eV
DOI:10.1103/PhysRevB.85.155207 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Feneberg, Martin;Roeppischer, Marcus;Cobet, Christoph;Esser, Norbert;Schoermann, Joerg;Schupp, Thorsten;As, Donat J.;Hoerich, Florian;Blaesing, Juergen;Krost, Alois;Goldhahn, Ruediger;
12:93:7 Accurate ab initio predictions of III-V direct-indirect band gap crossovers
DOI:10.1063/1.3485297 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Nicklas, Jeremy W.;Wilkins, John W.;
12:93:8 Laser field and electric field effects on exciton states and optical properties in zinc-blende GaN/AlGaN quantum well
DOI:10.1063/1.4809749 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Xia, Congxin;Chen, Xiaoyang;Wei, Shuyi;Jia, Yu;
12:93:9 Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C-SiC (001)
DOI:10.1063/1.3455066 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Tschumak, E.;Granzner, R.;Lindner, J. K. N.;Schwierz, F.;Lischka, K.;Nagasawa, H.;Abe, M.;As, D. J.;
12:93:10 Free carrier accumulation at cubic AlGaN/GaN heterojunctions
DOI:10.1063/1.3700968 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Wei, Q. Y.;Li, T.;Huang, J. Y.;Ponce, F. A.;Tschumak, E.;Zado, A.;As, D. J.;
12:93:11 Anti-phase domains in cubic GaN
DOI:10.1063/1.3666050 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Kemper, Ricarda Maria;Schupp, Thorsten;Haeberlen, Maik;Niendorf, Thomas;Maier, Hans-Juergen;Dempewolf, Anja;Bertram, Frank;Christen, Juergen;Kirste, Ronny;Hoffmann, Axel;Lindner, Joerg;As, Donat Josef;
12:93:12 Identification of the Nitrogen Split Interstitial (N-N)(N) in GaN
DOI:10.1103/PhysRevLett.109.206402 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:4 AU: von Bardeleben, H. J.;Cantin, J. L.;Gerstmann, U.;Scholle, A.;Greulich-Weber, S.;Rauls, E.;Landmann, M.;Schmidt, W. G.;Gentils, A.;Botsoa, J.;Barthe, M. F.;
12:93:13 Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory
DOI:10.1063/1.4895843 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Szallas, A.;Szasz, K.;Trinh, X. T.;Son, N. T.;Janzen, E.;Gali, A.;
12:93:14 Growth of cubic GaN on 3C-SiC/Si (001) nanostructures
DOI:10.1016/j.jcrysgro.2012.10.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Kemper, R. M.;Hiller, L.;Stauden, T.;Pezoldt, J.;Duschik, K.;Niendorf, T.;Maier, H. J.;Meertens, D.;Tillmann, K.;As, D. J.;Lindner, J. K. N.;
12:93:15 Nitrogen split interstitial center (N-N)(N) in GaN: High frequency EPR and ENDOR study
DOI:10.1103/PhysRevB.90.085203 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: von Bardeleben, H. J.;Cantin, J. L.;Vrielinck, H.;Callens, F.;Binet, L.;Rauls, E.;Gerstmann, U.;
12:93:16 Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers
DOI:10.1016/j.apsusc.2014.08.186 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Waheeda, S. N.;Zainal, N.;Hassan, Z.;Novikov, S. V.;Akimov, A. V.;Kent, A. J.;
12:93:17 Vertical design of cubic GaN-based high electron mobility transistors
DOI:10.1063/1.3663364 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Granzner, R.;Tschumak, E.;Kittler, M.;Tonisch, K.;Jatal, W.;Pezoldt, J.;As, D.;Schwierz, F.;
12:93:18 Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
DOI:10.1063/1.4801528 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Machhadani, H.;Beeler, M.;Sakr, S.;Warde, E.;Kotsar, Y.;Tchernycheva, M.;Chauvat, M. P.;Ruterana, P.;Nataf, G.;De Mierry, Ph;Monroy, E.;Julien, F. H.;
12:93:19 Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices
DOI:10.1155/2014/729041 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Yu, Chen-hui;Luo, Qing-zhou;Luo, Xiang-dong;Liu, Pei-sheng;
12:94:1 Direct experimental determination of the spontaneous polarization of GaN
DOI:10.1103/PhysRevB.86.081302 JN:PHYSICAL REVIEW B PY:2012
TC:28 AU: Laehnemann, Jonas;Brandt, Oliver;Jahn, Uwe;Pfueller, Carsten;Roder, Claudia;Dogan, Pinar;Grosse, Frank;Belabbes, Abderrezak;Bechstedt, Friedhelm;Trampert, Achim;Geelhaar, Lutz;
12:94:2 Transient photoluminescence of shallow donor bound excitons in GaN
DOI:10.1103/PhysRevB.82.235202 JN:PHYSICAL REVIEW B PY:2010
TC:19 AU: Monemar, B.;Paskov, P. P.;Bergman, J. P.;Pozina, G.;Toropov, A. A.;Shubina, T. V.;Malinauskas, T.;Usui, A.;
12:94:3 I-2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
DOI:10.1103/PhysRevB.83.035314 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Tischer, Ingo;Feneberg, Martin;Schirra, Martin;Yacoub, Hady;Sauer, Rolf;Thonke, Klaus;Wunderer, Thomas;Scholz, Ferdinand;
12:94:4 Properties of the main Mg-related acceptors in GaN from optical and structural studies
DOI:10.1063/1.4862928 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Monemar, B.;Paskov, P. P.;Pozina, G.;Hemmingsson, C.;Bergman, J. P.;Khromov, S.;Izyumskaya, V. N.;Avrutin, V.;Li, X.;Morkoc, H.;Amano, H.;Iwaya, M.;Akasaki, I.;
12:94:5 Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
DOI:10.1103/PhysRevB.84.165213 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Pozina, G.;Khromov, S.;Hemmingsson, C.;Hultman, L.;Monemar, B.;
12:94:6 Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
DOI:10.1063/1.4828820 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Khromov, S.;Monemar, B.;Avrutin, V.;Morkoc, H.;Hultman, L.;Pozina, G.;
12:94:7 Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
DOI:10.1103/PhysRevB.84.075324 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Khromov, S.;Hemmingsson, C. G.;Amano, H.;Monemar, B.;Hultman, L.;Pozina, G.;
12:94:8 Properties of GaN layers grown on N-face free-standing GaN substrates
DOI:10.1016/j.jcrysgro.2014.11.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Li, Xun;Hemmingsson, Carl;Forsberg, Urban;Janzen, Erik;Pozina, Galia;
12:94:9 Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
DOI:10.1063/1.4903819 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Khromov, S.;Hemmingsson, C.;Monemar, B.;Hultman, L.;Pozina, G.;
12:94:10 Optical and structural studies of homoepitaxially grown m-plane GaN
DOI:10.1063/1.4706258 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Khromov, S.;Monemar, B.;Avrutin, V.;Li, Xing;Morkoc, H.;Hultman, L.;Pozina, G.;
12:94:11 Atom probe tomography study of Mg-doped GaN layers
DOI:10.1088/0957-4484/25/27/275701 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Khromov, S.;Gregorius, D.;Schiller, R.;Loesch, J.;Wahl, M.;Kopnarski, M.;Amano, H.;Monemar, B.;Hultman, L.;Pozina, G.;
12:94:12 Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
DOI:10.1016/j.jcrysgro.2010.11.155 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Wei, T. B.;Yang, J. K.;Hu, Q.;Duan, R. F.;Huo, Z. Q.;Wang, J. X.;Zeng, Y. P.;Wang, G. H.;Li, J. M.;
12:94:13 Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels
DOI:10.1016/j.jcrysgro.2012.06.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Song, Keun Man;Kim, Jong Min;Shin, Chan Soo;Ko, Chul Gi;Cho, Hyung Koun;Yoon, Dae Ho;Hwang, Sung Min;Kim, Hogyoung;
12:94:14 Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
DOI:10.1016/j.jcrysgro.2012.12.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Hemmingsson, Carl;Pozina, Galia;
12:94:15 Pyramidal inversion domain boundaries revisited
DOI:10.1063/1.3644132 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Remmele, T.;Albrecht, M.;Irmscher, K.;Fornari, R.;Strassburg, M.;
12:94:16 Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy
DOI:10.1063/1.4895390 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tran Thien Duc;Pozina, Galia;Nguyen Tien Son;Janzen, Erik;Ohshima, Takeshi;Hemmingsson, Carl;
12:94:17 GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
DOI:10.1007/s11664-014-3021-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Tompkins, R. P.;Smith, J. R.;Kirchner, K. W.;Jones, K. A.;Leach, J. H.;Udwary, K.;Preble, E.;Suvarna, P.;Leathersich, J. M.;Shahedipour-Sandvik, F.;
12:94:18 Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
DOI:10.1063/1.3374704 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Feneberg, Martin;Thonke, Klaus;Wunderer, Thomas;Lipski, Frank;Scholz, Ferdinand;
12:94:19 Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy
DOI:10.1063/1.4825052 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Tran Thien Duc;Pozina, Galia;Janzen, Erik;Hemmingsson, Carl;
12:94:20 The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
DOI:10.1557/jmr.2011.360 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:7 AU: Tompkins, Randy P.;Walsh, Timothy A.;Derenge, Michael A.;Kirchner, Kevin W.;Zhou, Shuai;Nguyen, Cuong B.;Jones, Kenneth A.;Suvarna, Puneet;Tungare, Mihir;Tripathi, Neeraj;Shahedipour-Sandvik, Fatemeh (Shadi);
12:94:21 Temperature-related exciton features on the Ga/N-Faces of a free-standing HVPE GaN
DOI:10.1364/OME.4.000553 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Jiang, C. P.;Sui, Z. P.;Xu, K.;Zheng, X. H.;Liu, L.;Zhang, J. C.;Wang, X. Q.;Shen, B.;
12:95:1 Emitter controlled SiNx-free crystalline Si solar cells with a transparent conducting oxide film
DOI:10.1016/j.matlet.2012.04.028 JN:MATERIALS LETTERS PY:2012
TC:12 AU: Kim, Mingeon;Kim, Joondong;Kim, Hyunyub;Park, Yun Chang;Ryu, Kyungyul;Yi, Junsin;
12:95:2 Advances in crystalline silicon solar cell technology for industrial mass production
DOI:10.1038/asiamat.2010.82 JN:NPG ASIA MATERIALS PY:2010
TC:82 AU: Saga, Tatsuo;
12:95:3 Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications
DOI:10.1016/j.solmat.2010.04.068 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:23 AU: Kang, Dong-Won;Kuk, Seung-Hee;Ji, Kwang-Sun;Lee, Heon-Min;Han, Min-Koo;
12:95:4 Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell
DOI:10.1016/j.solmat.2011.07.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:16 AU: Lee, Eunjoo;Lee, Hyunwoo;Choi, Junyoung;Oh, Dongjun;Shim, Jimyung;Cho, Kyungyeun;Kim, Jisun;Lee, Soohong;Hallam, Brett;Wenham, Stuart R.;Lee, Haeseok;
12:95:5 Effective optimization of indium tin oxide films by a statistical approach for shallow emitter based crystalline silicon solar cell applications
DOI:10.1016/j.solmat.2014.03.011 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Anh Huy Tuan Le;Ahn, Shihyun;Han, Sangmyeong;Kim, Jungmo;Hussain, Shahzada Qamar;Park, Hyeongsik;Park, Cheolmin;Cam Phu Thi Nguyen;Vinh Ai Dao;Yi, Junsin;
12:95:6 The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter
DOI:10.1016/j.matlet.2014.06.074 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Ahn, Shihyun;Le, Anh Huy Tuan;Kim, Sunbo;Park, Cheolmin;Shin, Chonghoon;Lee, Youn-Jung;Lee, Jaehyeong;Jeong, Chaehwan;Vinh Ai Dao;Yi, Junsin;
12:95:7 Improving the efficiency of crystalline silicon solar cells by an intersected selective laser doping
DOI:10.1016/j.solmat.2011.07.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:14 AU: Zhu, L. Q.;Gong, J.;Huang, J.;She, P.;Zeng, M. L.;Li, L.;Dai, M. Z.;Wan, Q.;
12:95:8 Overcoming over-plating problems for PECVD SiNx passivated laser doped p-type multi-crystalline silicon solar cells
DOI:10.1016/j.solmat.2011.12.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:13 AU: Wang, Stanley;Lennon, Alison;Tjahjono, Budi;Mai, Ly;Vogl, Bernhard;Wenham, Stuart;
12:95:9 Experimental study on the elimination of over-plating problems in industrial manufacturing of large-area acidic-textured laser-doped multi-crystalline solar cells
DOI:10.1016/j.solmat.2012.08.019 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Zhou, Su;Zhou, Chunlan;Wang, Wenjing;Tang, Yehua;Chen, Jingwei;Yan, Baojun;Zhao, Yan;
12:95:10 Comprehensive study of light induced plating of nickel and its effect on large area laser doped crystalline solar cells
DOI:10.1016/j.solmat.2014.02.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Zhou, Su;Zhou, Chulan;Wang, Wenjing;Zhu, Junjie;Tang, Yehua;Chen, Jingwei;Zhao, Yan;
12:95:11 Double transparent conducting layers for Si photovoltaics
DOI:10.1016/j.tsf.2013.05.072 JN:THIN SOLID FILMS PY:2013
TC:10 AU: Yun, Ju-Hyung;Kim, Joondong;Park, Yun Chang;Moon, Sang-Jin;Anderson, Wayne A.;
12:95:12 A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells
DOI:10.1016/j.solmat.2010.06.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:22 AU: Chaudhari, Vikrant A.;Solanki, Chetan S.;
12:95:13 Mass production of high efficiency selective emitter crystalline silicon solar cells employing phosphorus ink technology
DOI:10.1016/j.solmat.2013.07.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:2 AU: Zhong, Sihua;Shen, Wenzhong;Liu, Feng;Li, Xiang;
12:95:14 Light-induced anodisation of silicon for solar cell passivation
DOI:10.1063/1.4829701 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Cui, J.;Wang, X.;Opila, R.;Lennon, A.;
12:95:15 High sheet resistance emitter c-Si solar cells with low SRV by local line contact with transparent conducting oxides
DOI:10.1016/j.matlet.2013.11.025 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Kim, Mingeon;Kim, Joondong;Lee, Youn-Jung;Ju, Minkyu;Park, Cheolmin;Balaji, Nagarajan;Lee, Seunghwan;Kim, Jungmo;Yi, Junsin;
12:95:16 Laser-doped metal-plated bifacial silicon solar cells
DOI:10.1016/j.solmat.2014.06.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:1 AU: Wang, Xi;Allen, Vincent;Vais, Valantis;Zhao, Yuebin;Tjahjono, Budi;Yao, Yu;Wenham, Stuart;Lennon, Alison;
12:95:17 Investigation of conductivity of adhesive layer including indium tin oxide particles for multi-junction solar cells
DOI:10.1007/s00339-014-8415-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Yoshidomi, Shinya;Hasumi, Masahiko;Sameshima, Toshiyuki;
12:95:18 Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation
DOI:10.1016/j.apsusc.2014.08.028 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Cui, Jie;Grant, Nicholas;Lennon, Alison;
12:95:19 Ni/Cu electroplating, a worthwhile alternative to use instead of Ag screen-printed front side metallization of conventional solar cells
DOI:10.1016/j.mssp.2014.05.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Bouyelfane, A.;Zerga, A.;
12:95:20 Effect of edge junction isolation on the performance of laser doped selective emitter solar cells
DOI:10.1016/j.solmat.2011.09.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:7 AU: Hallam, Brett;Wenham, Stuart;Lee, Haeseok;Lee, Eunjoo;Lee, Hyunwoo;Kim, Jisun;Shin, Jeoungeun;
12:95:21 Analysis of series resistance of crystalline silicon solar cell with two-layer front metallization based on light-induced plating
DOI:10.1016/j.solmat.2010.04.065 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:8 AU: Lee, Jin Hyung;Lee, Young Hyun;Ahn, Jun Yong;Jeong, Ji-Weon;
12:95:22 Selective emitter formation process using single screen-printed phosphorus diffusion source
DOI:10.1016/j.solmat.2012.11.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Uzum, Abdullah;Hamdi, Ali;Nagashima, Saori;Suzuki, Shota;Suzuki, Hidenori;Yoshiba, Shuhei;Dhamrin, Marwan;Kamisako, Koichi;Sato, Hiroaki;Katsuma, Katsuhiko;Kato, Kuniyasu;
12:95:23 The pH-sensitive Pd nanoparticles as ink for ink-jet printing technology and electroless Cu metallic patterns on indium-doped tin oxide substrate
DOI:10.1016/j.tsf.2013.03.043 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Tseng, Chun-Chieh;Lin, Yi;Liu, Tsai-Yun;Nian, Yan-Yu;Wang, Min-Wen;Ger, Ming-Der;
12:95:24 Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
DOI:10.1063/1.3607303 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Lai, Donny;Tan, Yew Heng;Gunawan, Oki;He, Lining;Tan, Chuan Seng;
12:95:25 SiliconPV 2012 generation of defect-related acceptor states by laser doping
DOI:10.1016/j.solmat.2012.06.045 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:6 AU: Safiei, Ali;Derix, Robert;Suckow, Stephan;Koch, Holger;Breuer, Uwe;Pletzer, Tobias M.;Wolter, Karl;Kurz, Heinrich;
12:95:26 Effect of edge junction isolation on the performance of laser doped selective emitter solar cells (vol 95, pg 3557, 2011)
DOI:10.1016/j.solmat.2011.12.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:0 AU: Hallam, Brett;Wenham, Stuart;Lee, Haeseok;Lee, Eunjoo;Lee, Hyunwoo;Kim, Jisun;Shin, Jeongeun;
12:95:27 Optimal indium tin oxide layer as anti reflection coating for crystalline silicon solar cell with shallow emitter
DOI:10.1016/j.tsf.2012.03.073 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Ryu, Kyungyul;Lee, Youn-Jung;Ju, Minkyu;Choi, Hyungwook;Kim, Bonggi;Lee, Jonghwan;Oh, Woongkyo;Choi, Kyuho;Balaji, Nagarajan;Yi, Junsin;
12:96:1 Hybridizing ZnO Nanowires with Micropyramid Silicon Wafers as Superhydrophobic High-Efficiency Solar Cells
DOI:10.1002/aenm.201100287 JN:ADVANCED ENERGY MATERIALS PY:2012
TC:43 AU: Liu, Yan;Das, Arnab;Xu, Sheng;Lin, Ziyin;Xu, Chen;Wang, Zhong Lin;Rohatgi, Ajeet;Wong, Ching Ping;
12:96:2 CuO nanoleaves enhance the c-Si solar cell efficiency
DOI:10.1039/c4ta00097h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:8 AU: Xia, Yusheng;Pu, Xuxin;Liu, Jie;Liang, Jie;Liu, Pujun;Li, Xiaoqing;Yu, Xibin;
12:96:3 Growth of vertically aligned ZnO nanorod arrays as antireflection layer on silicon solar cells
DOI:10.1016/j.solmat.2010.01.005 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:61 AU: Chen, J. Y.;Sun, K. W.;
12:96:4 Preparation of hybrid silicon wire and planar solar cells having ZnO antireflection coating by all-solution processes
DOI:10.1016/j.solmat.2011.10.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:24 AU: Baek, Seong-Ho;Kim, Seong-Been;Shin, Jang-Kyoo;Kim, Jae Hyun;
12:96:5 Silicon micro-structure and ZnO nanowire hierarchical assortments for light management
DOI:10.1364/OME.3.001039 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:9 AU: Choudhury, B. Dev;Abedin, A.;Dev, A.;Sanatinia, R.;Anand, S.;
12:96:6 Multiscaled hierarchical nanostructures for enhancing the conversion efficiency of crystalline silicon solar cells
DOI:10.1016/j.apsusc.2012.07.103 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Liu, Bingfa;Qiu, Shenyu;Hu, Ruiyi;Liao, Yuanbin;Chen, Nan;Du, Guoping;
12:96:7 Tapered aluminum-doped vertical zinc oxide nanorod arrays as light coupling layer for solar energy applications
DOI:10.1016/j.solmat.2010.10.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:15 AU: Chen, Jie;Ye, Hong;Ae, Lorenz;Tang, Yang;Kieven, David;Rissom, Thorsten;Neuendorf, Julia;Lux-Steiner, Martha Ch.;
12:96:8 Broadband antireflection of silicon nanorod arrays prepared by plasma enhanced chemical vapor deposition
DOI:10.1016/j.apsusc.2011.08.129 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Wang, Desheng;Yang, Zhibo;Li, Fei;Liu, Dequan;Wang, Peng;He, Deyan;
12:96:9 Tunable synthesis of ordered Zinc Oxide nanoflower-like arrays
DOI:10.1016/j.jcis.2012.12.028 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:7 AU: Xie, Fang;Centeno, Anthony;Zou, Bin;Ryan, Mary P.;Riley, D. Jason;Alford, Neil M.;
12:96:10 Optical and photovoltaic properties of silicon wire solar cells with controlled ZnO nanorods antireflection coating
DOI:10.1007/s10853-012-6268-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:0 AU: Baek, Seong-Ho;Noh, Bum-Young;Shin, Jang-Kyoo;Kim, Jae Hyun;
12:96:11 ZnO Nanorods as Antireflective Coatings for Industrial-Scale Single-Crystalline Silicon Solar Cells
DOI:10.1111/jace.12200 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:5 AU: Aurang, Pantea;Demircioglu, Olgu;Es, Firat;Turan, Rasit;Unalan, Husnu Emrah;
12:96:12 The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks
DOI:10.1016/j.solmat.2011.03.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:4 AU: Chen, Chun-Heng;Juan, Pi-Chun;Liao, Ming-Han;Tsai, Jing-Long;Hwang, Huey-Liang;
12:96:13 Broadband wavelength and wide-acceptance angle of the SiO2 sub-wavelength surface structure for solar cells using CF4 reactive ion etching
DOI:10.1016/j.tsf.2012.09.028 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Ho, Wen-Jeng;Ou, Shih-Hao;Lee, Yi-Yu;Liu, Jheng-Jie;
12:97:1 Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal
DOI:10.1002/smll.201303599 JN:SMALL PY:2014
TC:11 AU: Geng, Chong;Wei, Tongbo;Wang, Xiaoqing;Shen, Dezhong;Hao, Zhibiao;Yan, Qingfeng;
12:97:2 Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
DOI:10.1063/1.4767334 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Wei, Tongbo;Wu, Kui;Lan, Ding;Yan, Qingfeng;Chen, Yu;Du, Chengxiao;Wang, Junxi;Zeng, Yiping;Li, Jinmin;
12:97:3 Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography
DOI:10.1063/1.3531972 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Li, K. H.;Choi, H. W.;
12:97:4 Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography
DOI:10.1063/1.4901829 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Zhang, Yonghui;Wei, Tongbo;Xiong, Zhuo;Chen, Yu;Zhen, Aigong;Shan, Liang;Zhao, Yun;Hu, Qiang;Li, Jinmin;Wang, Junxi;
12:97:5 Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique
DOI:10.1063/1.4805035 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Athanasiou, M.;Kim, T. K.;Liu, B.;Smith, R.;Wang, T.;
12:97:6 InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer
DOI:10.1063/1.3631797 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Li, K. H.;Choi, H. W.;
12:97:7 Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching
DOI:10.1088/0957-4484/24/33/335301 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Geng, Chong;Zheng, Lu;Fang, Huajing;Yan, Qingfeng;Wei, Tongbo;Hao, Zhibiao;Wang, Xiaoqing;Shen, Dezhong;
12:97:8 The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates
DOI:10.1063/1.3463471 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: Kao, Chien-Chih;Su, Yan-Kuin;Lin, Chuing-Liang;Chen, Jian-Jhong;
12:97:9 Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography
DOI:10.1063/1.4889745 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, Yonghui;Wei, Tongbo;Xiong, Zhuo;Shang, Liang;Tian, Yingdong;Zhao, Yun;Zhou, Pengyu;Wang, Junxi;Li, Jinmin;
12:97:10 Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
DOI:10.1063/1.4823478 JN:AIP ADVANCES PY:2013
TC:4 AU: Wu, Kui;Zhang, Yiyun;Wei, Tongbo;Lan, Ding;Sun, Bo;Zheng, Haiyang;Lu, Hongxi;Chen, Yu;Wang, Junxi;Luo, Yi;Li, Jinmin;
12:97:11 Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography
DOI:10.1063/1.3698392 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Li, K. H.;Ma, Zetao;Choi, H. W.;
12:97:12 The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
DOI:10.1063/1.4867091 JN:AIP ADVANCES PY:2014
TC:4 AU: Zhang, Yonghui;Wei, Tongbo;Wang, Junxi;Lan, Ding;Chen, Yu;Hu, Qiang;Lu, Hongxi;Li, Jinmin;
12:97:13 InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography
DOI:10.1063/1.3684505 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Zhang, Q.;Li, K. H.;Choi, H. W.;
12:97:14 Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0001) substrate
DOI:10.1016/j.jcrysgro.2009.10.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:14 AU: Jeong, Seong-Muk;Kissinger, Suthan;Kim, Dong-Wook;Lee, Seung Jae;Kim, Jin-Soo;Ahn, Haeng-Keun;Lee, Cheul-Ro;
12:97:15 High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate
DOI:10.1063/1.3456385 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Huang, Hung-Wen;Huang, Jhi-Kai;Kuo, Shou-Yi;Lee, Kang-Yuan;Kuo, Hao-Chung;
12:97:16 III-nitride light-emitting diode with embedded photonic crystals
DOI:10.1063/1.4804678 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Li, K. H.;Zang, K. Y.;Chua, S. J.;Choi, H. W.;
12:97:17 Mechanism of optical degradation in microstructured InGaN light-emitting diodes
DOI:10.1063/1.3517829 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Li, Z. L.;Li, K. H.;Choi, H. W.;
12:97:18 Observation of enhanced visible and infrared emissions in photonic crystal thin-film light-emitting diodes
DOI:10.1063/1.4893739 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Cheung, Y. F.;Li, K. H.;Hui, R. S. Y.;Choi, H. W.;
12:97:19 Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars
DOI:10.1063/1.3622142 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Ghosh, A.;Bhasker, H. P.;Mukherjee, A.;Kundu, T.;Singh, B. P.;Dhar, S.;De, S.;Chowdhury, A.;
12:97:20 Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
DOI:10.1016/j.jcrysgro.2014.02.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Zhang, Yonghui;Wei, Tongbo;Wang, Junxi;Fan, Chao;Chen, Yu;Hu, Qiang;Li, Jinmin;
12:97:21 Density-tunable non-close-packed monolayer of silica nanospheres prepared by single-step freeze-drying
DOI:10.1116/1.4895037 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Feng, Cong;Choi, Hoi Wai;
12:97:22 Enhanced light extraction from GaN-based LEDs with a bottom-up assembled photonic crystal
DOI:10.1016/j.mseb.2011.05.026 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:4 AU: Gong, Haibo;Hao, Xiaopeng;Wu, Yongzhong;Cao, Bingqiang;Xia, Wei;Xu, Xiangang;
12:98:1 Dielectric function of a-Si:H based on local network structures
DOI:10.1103/PhysRevB.83.195205 JN:PHYSICAL REVIEW B PY:2011
TC:21 AU: Kageyama, Shota;Akagawa, Masataka;Fujiwara, Hiroyuki;
12:98:2 Optical characterization of textured SnO2:F layers using spectroscopic ellipsometry
DOI:10.1063/1.4759054 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Akagawa, Masataka;Fujiwara, Hiroyuki;
12:98:3 Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O3:Sn layers by spectroscopic ellipsometry
DOI:10.1063/1.4812479 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Matsuki, Nobuyuki;Fujiwara, Hiroyuki;
12:98:4 Ellipsometric studies on ZnO:Al thin films: Refinement of dispersion theories
DOI:10.1016/j.tsf.2010.09.057 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Ehrmann, Nicole;Reineke-Koch, Rolf;
12:98:5 High-precision characterization of textured a-Si:H/SnO2:F structures by spectroscopic ellipsometry
DOI:10.1063/1.3646521 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Akagawa, Masataka;Fujiwara, Hiroyuki;
12:98:6 Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture
DOI:10.1063/1.4870443 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Sago, Keisuke;Kuramochi, Hideto;Iigusa, Hitoshi;Utsumi, Kentaro;Fujiwara, Hiroyuki;
12:98:7 Complete parameterization of the dielectric function of microcrystalline silicon fabricated by plasma-enhanced chemical vapor deposition
DOI:10.1063/1.4704158 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Yuguchi, Tetsuya;Kanie, Yosuke;Matsuki, Nobuyuki;Fujiwara, Hiroyuki;
12:98:8 Characterization of mu c-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry
DOI:10.1016/j.tsf.2013.10.073 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Murata, Daisuke;Yuguchi, Tetsuya;Fujiwara, Hiroyuki;
12:98:9 Extraction of optical properties of flat and surface-textured transparent conductive oxide films in a broad wavelength range
DOI:10.1016/j.tsf.2011.08.023 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Sap, J. A.;Isabella, O.;Jager, K.;Zeman, M.;
12:98:10 Ellipsometry characterization of a-Si:H layers for thin-film solar cells
DOI:10.1016/j.jnoncrysol.2011.12.042 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:6 AU: Kageyama, Shota;Akagawa, Masataka;Fujiwara, Hiroyuki;
12:98:11 Characterization of textured SnO2: F layers by ellipsometry using glass-side illumination
DOI:10.1016/j.tsf.2013.02.018 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Yamaguchi, Shinji;Sugimoto, Yoshio;Fujiwara, Hiroyuki;
12:98:12 Characterization of a-Si:H thin layers incorporated into textured a-Si:H/c-Si solar cell structures by spectroscopic ellipsometry using a tilt-angle optical configuration
DOI:10.1016/j.tsf.2014.08.039 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Tanaka, Yoshikazu;Matsuki, Nobuyuki;Fujiwara, Hiroyuki;
12:98:13 Selectively coated high efficiency glazing for solar-thermal flat-plate collectors
DOI:10.1016/j.tsf.2011.04.094 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Ehrmann, N.;Reineke-Koch, R.;
12:98:14 Optical characterization and modeling of Cu(In,Ga)(Se,S)(2) solar cells with spectroscopic ellipsometry and coherent numerical simulation
DOI:10.1016/j.tsf.2012.11.078 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Richter, M.;Schubbert, C.;Eraerds, P.;Riedel, I.;Keller, J.;Parisi, J.;Dalibor, T.;Avellan-Hampe, A.;
12:98:15 Ellipsometry analysis of a-Si:H solar cell structures with submicron-size textures using glass-side illumination
DOI:10.1016/j.tsf.2014.06.025 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yamaguchi, Shinji;Sugimoto, Yoshio;Fujiwara, Hiroyuki;
12:98:16 Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD
DOI:10.1063/1.4879807 JN:AIP ADVANCES PY:2014
TC:1 AU: Abdulraheem, Yaser;Gordon, Ivan;Bearda, Twan;Meddeb, Hosny;Poortmans, Jozef;
12:98:17 Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells
DOI:10.1016/j.mssp.2014.02.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Pehlivan, Ozlem;Menda, Deneb;Yilmaz, Okan;Kodolbas, Alp Osman;Ozdemir, Orhan;Duygulu, Ozgur;Kutlu, Kubilay;Tomak, Mehmet;
12:98:18 Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells
DOI:10.1016/j.tsf.2009.09.042 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Saenger, M. F.;Sun, J.;Schaedel, M.;Hilfiker, J.;Schubert, M.;Woollam, J. A.;
12:98:19 Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film
DOI:10.1063/1.4865927 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Park, Seungil;Ji, Hyung Yong;Kim, Myeong Jun;Peck, Jong Hyeon;Kim, Keunjoo;
12:98:20 Local network structure of a-SiC:H and its correlation with dielectric function
DOI:10.1063/1.4849955 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Kageyama, Shota;Matsuki, Nobuyuki;Fujiwara, Hiroyuki;
12:98:21 The influence of process parameters and coating properties of double glazing coated with transparent conducting oxides on the efficiency of solar-thermal flat-plate collectors
DOI:10.1016/j.tsf.2012.11.145 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Ehrmann, N.;Reineke-Koch, R.;Foeste, S.;Giovannetti, F.;
12:98:22 Influence of textured c-Si surface morphology on the interfacial properties of heterojunction silicon solar cells
DOI:10.1016/j.jnoncrysol.2011.12.106 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Li, Guorong;Zhou, Yuqin;Liu, Fengzhen;
12:98:23 In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applications
DOI:10.1016/j.tsf.2014.06.009 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Mrazkova, Z.;Torres-Rios, A.;Ruggeri, R.;Foldyna, M.;Postava, K.;Pistora, J.;i Cabarrocas, P. Roca;
12:98:24 Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films
DOI:10.1016/j.tsf.2014.05.063 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Hu, L. C.;Ruan, G. M.;Wei, T. C.;Wang, C. J.;Lin, Y. W.;Lee, C. C.;Kawai, Y.;Li, Tomi T.;
12:98:25 Aluminum-doped zinc oxide sol-gel thin films: Influence of the sol's water content on the resistivity
DOI:10.1016/j.tsf.2014.01.052 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Nehmann, Julia B.;Ehrmann, Nicole;Reineke-Koch, Rolf;Bahnemann, Detlef W.;
12:99:1 Photonic design principles for ultrahigh-efficiency photovoltaics
DOI:10.1038/nmat3263 JN:NATURE MATERIALS PY:2012
TC:212 AU: Polman, Albert;Atwater, Harry A.;
12:99:2 Thermodynamics of light management in photovoltaic devices
DOI:10.1103/PhysRevB.90.035211 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Rau, Uwe;Paetzold, Ulrich W.;Kirchartz, Thomas;
12:99:3 Photon management for photovoltaics
DOI:10.1557/mrs.2011.109 JN:MRS BULLETIN PY:2011
TC:32 AU: Yu, E. T.;van de Lagemaat, J.;
12:99:4 Theory of random nanoparticle layers in photovoltaic devices applied to self-aggregated metal samples
DOI:10.1016/j.solmat.2012.11.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:0 AU: David, C.;Connolly, J. P.;Chaverri Ramos, C.;Garcia de Abajo, F. J.;Sanchez Plaza, G.;
12:99:5 Novel Heterogeneous Integration Technology of III-V Layers and InGaAs FinFETs to Silicon
DOI:10.1002/adfm.201400105 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Dai, Xing;Binh-Minh Nguyen;Hwang, Yoontae;Soci, Cesare;Dayeh, Shadi A.;
12:99:6 Inclusion of nanometer-sized silicon crystallites in n-layer for open circuit voltage enhancement in amorphous silicon solar cell
DOI:10.1016/j.solmat.2014.04.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:0 AU: Hou, Guofu;Li, Guijun;Fang, Jia;Wei, Changchun;Zhang, Xiaodan;Zhao, Ying;
12:99:7 On the thermodynamics of light trapping in solar cells
DOI:10.1038/nmat3837 JN:NATURE MATERIALS PY:2014
TC:4 AU: Rau, Uwe;Kirchartz, Thomas;
12:99:8 On the thermodynamics of light trapping in solar cells Reply
DOI:10.1038/nmat3838 JN:NATURE MATERIALS PY:2014
TC:1 AU: Atwater, Harry A.;Polman, Albert;
12:99:9 Dependence of Plasmonic Properties of Silver Island Films on Nanoparticle Size and Substrate Coverage
DOI:10.1155/2013/247045 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Sreenivasan, M. G.;Malik, Shweta;Thigulla, Srikanth;Mehta, Bodh Raj;
12:99:10 CuInS2 solar cell absorber plasmonically modified by gold nanoparticles
DOI:10.1007/s00339-014-8681-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Repan, Taavi;Dolgov, Leonid;Katerski, Atanas;Acik, Ilona Oja;Kaerber, Erki;Mere, Arvo;Mikli, Valdek;Krunks, Malle;Sildos, Ilmo;
12:99:11 Influence of the contacting scheme in simulations of radial silicon nanorod solar cells
DOI:10.1016/j.mseb.2011.10.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:0 AU: Voigt, Felix;Stelzner, Thomas;Christiansen, Silke H.;
12:99:12 Solar energy's path towards competitiveness
DOI:10.1038/nmat3270 JN:NATURE MATERIALS PY:2012
TC:0 AU: [Anonymous];
12:100:1 Segregation of In to Dislocations in InGaN
DOI:10.1021/nl5036513 JN:NANO LETTERS PY:2015
TC:0 AU: Horton, Matthew K.;Rhode, Sneha;Sahonta, Suman-Lata;Koppers, Menno J.;Haigh, Sarah J.;Pennycook, Timothy J.;Humphreys, Colin J.;Dusane, Rajiv O.;Moram, Michelle A.;
12:100:2 Bridging the gap between atomic microstructure and electronic properties of alloys: The case of (In,Ga)N
DOI:10.1103/PhysRevB.82.045112 JN:PHYSICAL REVIEW B PY:2010
TC:16 AU: Chan, J. A.;Liu, J. Z.;Zunger, Alex;
12:100:3 Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
DOI:10.1063/1.4742015 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Schulz, T.;Remmele, T.;Markurt, T.;Korytov, M.;Albrecht, M.;
12:100:4 Revisiting the "In-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
DOI:10.1063/1.4807122 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Baloch, Kamal H.;Johnston-Peck, Aaron C.;Kisslinger, Kim;Stach, Eric A.;Gradecak, Silvija;
12:100:5 Ordering in ternary nitride semiconducting alloys
DOI:10.1103/PhysRevB.85.035211 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Lopuszynski, Michal;Majewski, Jacek A.;
12:100:6 Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys
DOI:10.1063/1.3394007 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Lei, Huaping;Chen, Jun;Ruterana, Pierre;
12:100:7 Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
DOI:10.1063/1.3610468 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Bennett, Samantha E.;Saxey, David W.;Kappers, Menno J.;Barnard, Jonathan S.;Humphreys, Colin J.;Smith, George D. W.;Oliver, Rachel A.;
12:100:8 Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
DOI:10.1063/1.3632985 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Kioseoglou, J.;Kalesaki, E.;Belabbas, I.;Chen, J.;Nouet, G.;Kirmse, H.;Neumann, W.;Komninou, Ph.;Karakostas, Th.;
12:100:9 A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes
DOI:10.1063/1.3476285 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Oezdoel, V. B.;Koch, C. T.;van Aken, P. A.;
12:100:10 Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
DOI:10.1063/1.3692569 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Bennett, Samantha E.;Smeeton, Tim M.;Saxey, David W.;Smith, George D. W.;Hooper, Stewart E.;Heffernan, Jonathan;Humphreys, Colin J.;Oliver, Rachel A.;
12:100:11 Structure and electronic properties of mixed (a plus c) dislocation cores in GaN
DOI:10.1063/1.4893030 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Horton, M. K.;Rhode, S. L.;Moram, M. A.;
12:100:12 Mg Doping Affects Dislocation Core Structures in GaN
DOI:10.1103/PhysRevLett.111.025502 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:6 AU: Rhode, S. K.;Horton, M. K.;Kappers, M. J.;Zhang, S.;Humphreys, C. J.;Dusane, R. O.;Sahonta, S. -L.;Moram, M. A.;
12:100:13 Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells
DOI:10.1016/j.actamat.2011.01.016 JN:ACTA MATERIALIA PY:2011
TC:9 AU: Shi, Jun-jie;Zhang, Shuai;Yang, Mao;Zhu, Shang-guo;Zhang, Min;
12:100:14 Electronic structure and metallization effects at threading dislocation cores in GaN
DOI:10.1016/j.commatsci.2014.04.021 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Belabbas, I.;Chen, J.;Nouet, G.;
12:100:15 Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys
DOI:10.1063/1.3509147 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Lei, Huaping;Chen, Jun;Ruterana, Pierre;
12:100:16 Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique
DOI:10.1063/1.3429604 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Amma, Shin-ichi;Tokumoto, Yuki;Edagawa, Keiichi;Shibata, Naoya;Mizoguchi, Teruyasu;Yamamoto, Takahisa;Ikuhara, Yuichi;
12:100:17 Electronic structures and optical properties of GaN nanotubes with Mg-Ga-O-N co-doping
DOI:10.1016/j.matchemphys.2012.11.050 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Yang, Mao;Shi, Jun-jie;Zhang, Min;Zhang, Shuai;Bao, Zhi-qiang;Luo, Shao-jun;Zhou, Tie-Cheng;Zhu, Tian-cong;Li, Xiang;Li, Jia;
12:100:18 The 60 degrees basal dislocation in wurtzite GaN: Energetics, electronic and core structures
DOI:10.1016/j.commatsci.2013.05.038 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:4 AU: Belabbas, I.;Chen, J.;Komninou, Ph.;Nouet, G.;
12:100:19 Anisotropic In distribution in InGaN core-shell nanowires
DOI:10.1063/1.4886756 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Leclere, C.;Katcho, N. A.;Tourbot, G.;Daudin, B.;Proietti, M. G.;Renevier, H.;
12:100:20 Periodic Nanowire Array at the Crystal Interface
DOI:10.1021/nn4023334 JN:ACS NANO PY:2013
TC:1 AU: Nakamura, Atsutomo;Mizoguchi, Teruyasu;Matsunaga, Katsuyuki;Yamamoto, Takahisa;Shibata, Naoya;Ikuhara, Yuichi;
12:100:21 Atomic-scale modeling of In(x)Ga(1-x)N quantum dot self-assembly
DOI:10.1116/1.3579462 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Zhang, Zhenli;Chatterjee, Alok;Grein, Christoph;Ciani, Anthony J.;Chung, Peter W.;
12:101:1:1 Zinc Selenide Optical Fibers
DOI:10.1002/adma.201003214 JN:ADVANCED MATERIALS PY:2011
TC:33 AU: Sparks, Justin R.;He, Rongrui;Healy, Noel;Krishnamurthi, Mahesh;Peacock, Anna C.;Sazio, Pier J. A.;Gopalan, Venkatraman;Badding, John V.;
12:101:1:2 Conformal Coating by High Pressure Chemical Deposition for Patterned Microwires of II-VI Semiconductors
DOI:10.1002/adfm.201202224 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:4 AU: Sparks, Justin R.;He, Rongrui;Healy, Noel;Chaudhuri, Subhasis;Fitzgibbons, Thomas C.;Peacock, Anna C.;Sazio, Pier J. A.;Badding, John V.;
12:101:1:3 High-Pressure Chemical Deposition for Void-Free Filling of Extreme Aspect Ratio Templates
DOI:10.1002/adma.201001199 JN:ADVANCED MATERIALS PY:2010
TC:10 AU: Baril, Neil F.;Keshavarzi, Banafsheh;Sparks, Justin R.;Krishnamurthi, Mahesh;Temnykh, Ivan;Sazio, Pier J. A.;Peacock, Anna C.;Borhan, Ali;Gopalan, Venkatraman;Badding, John V.;
12:101:1:4 Confined High-Pressure Chemical Deposition of Hydrogenated Amorphous Silicon
DOI:10.1021/ja2067862 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:7 AU: Baril, Neil F.;He, Rongrui;Day, Todd D.;Sparks, Justin R.;Keshavarzi, Banafsheh;Krishnamurthi, Mahesh;Borhan, Ali;Gopalan, Venkatraman;Peacock, Anna C.;Healy, Noel;Sazio, Pier J. A.;Badding, John V.;
12:101:1:5 A magnifying fiber element with an array of sub-wavelength Ge/ZnSe pixel waveguides for infrared imaging
DOI:10.1063/1.4734787 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Krishnamurthi, Mahesh;Barnes, Eftihia;Sparks, Justin R.;He, Rongrui;Baril, Neil F.;Sazio, Pier J. A.;Badding, John V.;Gopalan, Venkatraman;
12:101:1:6 Fabrication and power scaling of a 1.7 W Cr:ZnSe waveguide laser
DOI:10.1364/OME.3.001250 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:11 AU: Berry, Patrick A.;Macdonald, John R.;Beecher, Stephen J.;McDaniel, Sean A.;Schepler, Kenneth L.;Kar, Ajoy K.;
12:101:1:7 Compact mid-infrared Cr:ZnSe channel waveguide laser
DOI:10.1063/1.4803058 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Macdonald, J. R.;Beecher, S. J.;Berry, P. A.;Schepler, K. L.;Kar, A. K.;
12:101:2:1 Low loss silicon fibers for photonics applications
DOI:10.1063/1.3294630 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Lagonigro, Laura;Healy, Noel;Sparks, Justin R.;Baril, Neil F.;Sazio, Pier J. A.;Badding, John V.;Peacock, Anna C.;
12:101:2:2 Atomically smooth polycrystalline silicon waveguides fabricated
DOI:10.1364/OL.36.002480 JN:MRS BULLETIN PY:2011
TC:0 AU: Scheiner, Benjamin;
12:101:2:3 Thermal nonlinearity in silicon microcylindrical resonators
DOI:10.1063/1.4709424 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Vukovic, Natasha;Healy, Noel;Mehta, Priyanth;Day, Todd D.;Sazio, Pier J. A.;Badding, John V.;Peacock, Anna C.;
12:101:2:4 Mid-infrared transmission properties of amorphous germanium optical fibers
DOI:10.1063/1.3481413 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Mehta, Priyanth;Krishnamurthi, Mahesh;Healy, Noel;Baril, Neil F.;Sparks, Justin R.;Sazio, Pier J. A.;Gopalan, Venkatraman;Badding, John V.;Peacock, Anna C.;
12:101:2:5 Ultra-smooth microcylindrical resonators fabricated from the silicon optical fiber platform
DOI:10.1063/1.3615689 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Vukovic, Natasha;Healy, Noel;Horak, Peter;Sparks, Justin R.;Sazio, Pier J. A.;Badding, John V.;Peacock, Anna C.;
12:101:2:6 Extreme electronic bandgap modification in laser-crystallized silicon optical fibres
DOI:10.1038/NMAT4098 JN:NATURE MATERIALS PY:2014
TC:3 AU: Healy, Noel;Mailis, Sakellaris;Bulgakova, Nadezhda M.;Sazio, Pier J. A.;Day, Todd D.;Sparks, Justin R.;Cheng, Hiu Y.;Badding, John V.;Peacock, Anna C.;
12:101:2:7 Single-Fluxon Controlled Resistance Switching in Centimeter-Long Superconducting Gallium-Indium Eutectic Nanowires
DOI:10.1021/nl503283e JN:NANO LETTERS PY:2015
TC:1 AU: Zhao, Weiwei;Bischof, Jesse L.;Hutasoit, Jimmy;Liu, Xin;Fitzgibbons, Thomas C.;Hayes, John R.;Sazio, Pier J. A.;Liu, Chaoxing;Jain, Jainendra K.;Badding, John V.;Chan, M. H. W.;
12:101:3:1 The influence of core geometry on the crystallography of silicon optical fiber
DOI:10.1016/j.jcrysgro.2011.12.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Morris, Stephanie;McMillen, Colin;Hawkins, Thomas;Foy, Paul;Stolen, Roger;Ballato, John;Rice, Robert;
12:101:3:2 On crystallographic orientation in crystal core optical fibers
DOI:10.1016/j.optmat.2010.01.002 JN:OPTICAL MATERIALS PY:2010
TC:17 AU: McMillen, C.;Hawkins, T.;Foy, P.;Mulwee, D.;Kolis, J.;Stolen, R.;Rice, R.;Ballato, J.;COMSET;
12:101:3:3 Annealing of silicon optical fibers
DOI:10.1063/1.3660270 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Gupta, N.;McMillen, C.;Singh, R.;Podila, R.;Rao, A. M.;Hawkins, T.;Foy, P.;Morris, S.;Rice, R.;Poole, K. F.;Zhu, L.;Ballato, J.;
12:101:3:4 On crystallographic orientation in crystal core optical fibers II: Effects of tapering
DOI:10.1016/j.optmat.2012.06.020 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: McMillen, C.;Brambilla, G.;Morris, S.;Hawkins, T.;Foy, P.;Broderick, N.;Koukharenko, E.;Rice, R.;Ballato, J.;
12:101:3:5 Silicon optical fiber diameter dependent grain size
DOI:10.1016/j.jcrysgro.2013.02.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Scott, Brian L.;Pickrell, Gary R.;
12:101:4:1 Silicon p-i-n Junction Fibers
DOI:10.1002/adma.201203879 JN:ADVANCED MATERIALS PY:2013
TC:16 AU: He, Rongrui;Day, Todd D.;Krishnamurthi, Mahesh;Sparks, Justin R.;Sazio, Pier J. A.;Gopalan, Venkatraman;Badding, John V.;
12:101:4:2 Superconducting fiber
DOI:10.1063/1.4819074 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Homa, D.;Liang, Y.;Pickrell, G.;
12:101:4:3 Silicon fiber with p-n junction
DOI:10.1063/1.4895661 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Homa, D.;Cito, A.;Pickrell, G.;Hill, C.;Scott, B.;
12:101:4:4 Electronic and magnetic fibers
DOI:10.1016/j.matlet.2014.06.179 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Homa, Daniel;Kaur, Gurbinder;Pickrell, Gary;Scott, Brian;Hill, Cary;
12:101:4:5 Liquid-core low-refractive-index-contrast Bragg fiber sensor
DOI:10.1063/1.3592758 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Qu, Hang;Skorobogatiy, Maksim;
12:101:4:6 Photonic bandgap narrowing in conical hollow core Bragg fibers
DOI:10.1063/1.4893594 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ozturk, Fahri Emre;Yildirim, Adem;Kanik, Mehmet;Bayindir, Mehmet;
12:101:4:7 Design and fabrication of extruded retroreflective polymer fibers
DOI:10.1364/OME.4.002656 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Ghebrebrhan, Michael;Hoke, Landa C.;Aranda, Francisco J.;Hoey, Megan L.;Archambault, Deana M.;Perry, Jeffrey;Belton, Lauren;Ziegler, David;Carlson, Joel B.;Kimball, Brian R.;
12:101:5:1 Bulk fabrication and properties of solar grade silicon microwires
DOI:10.1063/1.4902140 JN:APL MATERIALS PY:2014
TC:0 AU: Martinsen, F. A.;Ballato, J.;Hawkins, T.;Gibson, U. J.;
12:101:5:2 Alkaline oxide interface modifiers for silicon fiber production
DOI:10.1364/OME.3.000651 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:4 AU: Nordstrand, Erlend F.;Dibbs, Andrew N.;Eraker, Andreas J.;Gibson, Ursula J.;
12:101:5:3 Purification of melt-spun metallurgical grade silicon micro-flakes through a multi-step segregation procedure
DOI:10.1016/j.jcrysgro.2012.09.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Martinsen, F. A.;Nordstrand, E. F.;Gibson, U. J.;
12:102:1 Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer
DOI:10.1016/j.solmat.2009.11.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:54 AU: Chen, J. Y.;Sun, K. W.;
12:102:2 Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE)
DOI:10.1016/j.solmat.2010.03.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:42 AU: Yoo, Jinsu;Yu, Gwonjong;Yi, Junsin;
12:102:3 The performances of silicon solar cell with core-shell p-n junctions of micro-nano pillars fabricated by cesium chloride self-assembly and dry etching
DOI:10.1007/s00339-013-7743-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Liu, Jing;Zhang, Xinshuai;Dong, Gangqiang;Liao, Yuanxun;Wang, Bo;Zhang, Tianchong;Yi, Futing;
12:102:4 Fabrication of silicon nanopillar arrays by cesium chloride self-assembly and wet electrochemical etching for solar cell
DOI:10.1016/j.apsusc.2013.10.154 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Liu, Jing;Zhang, Xinshuai;Dong, Gangqiang;Liao, Yuanxun;Wang, Bo;Zhang, Tianchong;Yi, Futing;
12:102:5 Nanopillars by cesium chloride self-assembly and dry etching
DOI:10.1088/0957-4484/21/46/465302 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Liao, Y-X;Yi, F-T;
12:102:6 Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
DOI:10.1116/1.4798410 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Kim, Dae-Seon;Eo, Sung-Hwa;Jang, Jae-Hyung;
12:102:7 Antireflective nanostructures fabricated by reactive ion etching method on pyramid-structured silicon surface
DOI:10.1016/j.apsusc.2013.01.216 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Yue, Zhihao;Shen, Honglie;Jiang, Ye;
12:102:8 Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching
DOI:10.1016/j.apsusc.2012.05.099 JN:APPLIED SURFACE SCIENCE PY:2012
TC:12 AU: Liu, Jing;Ashmkhan, Marina;Wang, Bo;Yi, Futing;
12:102:9 Efficiency enhancement of the poly-silicon solar cell using self-assembled dielectric nanoparticles
DOI:10.1016/j.solmat.2011.03.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:21 AU: Huang, C. K.;Lin, H. H.;Chen, J. Y.;Sun, K. W.;Chang, W. -L.;
12:102:10 Fabrication of micro-nano surface texture by CsCl lithography with antireflection and photoelectronic properties for solar cells
DOI:10.1016/j.solmat.2012.09.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:10 AU: Liu, Jing;Ashmkhan, Marina;Dong, Gangqiang;Wang, Bo;Yi, Futing;
12:102:11 Enhanced omni-directional performance of copper zinc tin sulfide thin film solar cell by gradient index coating
DOI:10.1063/1.4868104 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Ge, Zhongyang;Rajbhandari, Pravakar;Hu, Junjie;Emrani, Amin;Dhakal, Tara P.;Westgate, Charles;Klotzkin, David;
12:102:12 Mask less fabrication of large scale Si nanohole array via laser annealed metal nanoparticles catalytic etching for photovoltaic application
DOI:10.1063/1.3462397 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Wang, Fei;Yu, Hong Yu;Wang, Xincai;Li, Junshuai;Sun, Xiaowei;Yang, Mingfei;Wong, She Mein;Zheng, Hongyu;
12:102:13 Plasma-etching fabrication and properties of black silicon by using sputtered silver nanoparticles as micromasks
DOI:10.1016/j.tsf.2011.12.080 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Bi, Yanming;Su, Xiaodong;Zou, Shuai;Xin, Yu;Dai, Zhihua;Huang, Jie;Wang, Xusheng;Zhang, Linjun;
12:102:14 Multiform structures with silicon nanopillars by cesium chloride self-assembly and dry etching
DOI:10.1016/j.apsusc.2011.07.014 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Liao, Yuan-xun;Liu, Jing;Wang, Bo;Yi, Fu-ting;
12:102:15 Triple-junction InGaP/GaAs/Ge solar cells integrated with polymethyl methacrylate subwavelength structure
DOI:10.1016/j.apsusc.2014.09.138 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Kim, Dae-Seon;Jeong, Yonkil;Jeong, Hojung;Jang, Jae-Hyung;
12:102:16 Maskless texturization of phosphorus-diffused layers for crystalline Si solar cells by plasmaless dry etching with chlorine trifluoride gas
DOI:10.1016/j.solmat.2010.06.040 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:6 AU: Kohata, Hayato;Saito, Yoji;
12:102:17 Highly textured multi-crystalline silicon surface obtained by dry etching multi-step process
DOI:10.1016/j.solmat.2013.04.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:1 AU: Cecchetto, L.;Serenelli, L.;Agarwal, G.;Izzi, M.;Salza, E.;Tucci, M.;
12:102:18 Fabrication of cone-shaped subwavelength structures by utilizing a confined convective self-assembly technique and inductively coupled-plasma reactive-ion etching
DOI:10.1116/1.3556962 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:8 AU: Kim, Dae-Seon;Park, Min-Su;Jang, Jae-Hyung;
12:102:19 Fabrication and Characteristics of mc-Si Solar Cells with RIE-Textured Surface
DOI:10.1080/15421406.2012.693289 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:1 AU: Park, Kwang Mook;Lee, Myoung Bok;Jung, Ji Hee;Choi, Sie Young;
12:103:1 High-pressure Raman scattering in wurtzite indium nitride
DOI:10.1063/1.3609327 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Ibanez, J.;Manjon, F. J.;Segura, A.;Oliva, R.;Cusco, R.;Vilaplana, R.;Yamaguchi, T.;Nanishi, Y.;Artus, L.;
12:103:2 High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy
DOI:10.1103/PhysRevB.88.115202 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Ibanez, J.;Oliva, R.;Manjon, F. J.;Segura, A.;Yamaguchi, T.;Nanishi, Y.;Cusco, R.;Artus, L.;
12:103:3 Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
DOI:10.1063/1.3520643 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Cusco, R.;Domenech-Amador, N.;Artus, L.;Gotschke, T.;Jeganathan, K.;Stoica, T.;Calarco, R.;
12:103:4 Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
DOI:10.1063/1.4704367 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Millot, Marius;Geballe, Zachary M.;Yu, Kin M.;Walukiewicz, Wladek;Jeanloz, Raymond;
12:103:5 High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients
DOI:10.1063/1.4870529 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Oliva, R.;Ibanez, J.;Cusco, R.;Dadgar, A.;Krost, A.;Gandhi, J.;Bensaoula, A.;Artus, L.;
12:103:6 Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure
DOI:10.1063/1.3431291 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Ibanez, J.;Segura, A.;Manjon, F. J.;Artus, L.;Yamaguchi, T.;Nanishi, Y.;
12:103:7 Raman and photoluminescence mapping of InxGa1-xN (x similar to 0.4) at high pressure: Optical determination of composition and stress
DOI:10.1063/1.4895023 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Gkrana, V.;Filintoglou, K.;Arvanitidis, J.;Christofilos, D.;Bazioti, C.;Dimitrakopulos, G. P.;Katsikini, M.;Ves, S.;Kourouklis, G. A.;Zoumakis, N.;Georgakilas, A.;Iliopoulos, E.;
12:103:8 Raman scattering by the E-2h and A(1)(LO) phonons of InxGa1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
DOI:10.1063/1.3693579 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Oliva, R.;Ibanez, J.;Cusco, R.;Kudrawiec, R.;Serafinczuk, J.;Martinez, O.;Jimenez, J.;Henini, M.;Boney, C.;Bensaoula, A.;Artus, L.;
12:103:9 Longer InN phonon lifetimes in nanowires
DOI:10.1088/0957-4484/23/8/085702 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Domenech-Amador, N.;Cusco, R.;Artus, L.;Stoica, T.;Calarco, R.;
12:103:10 High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN
DOI:10.1103/PhysRevB.86.035210 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Ibanez, J.;Segura, A.;Garcia-Domene, B.;Oliva, R.;Manjon, F. J.;Yamaguchi, T.;Nanishi, Y.;Artus, L.;
12:103:11 Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride
DOI:10.1063/1.4903860 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Oliva, R.;Segura, A.;Ibanez, J.;Yamaguchi, T.;Nanishi, Y.;Artus, L.;
12:103:12 Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure
DOI:10.1103/PhysRevB.81.033102 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Duan, Man-Yi;He, Lin;Xu, Ming;Xu, Ming-Yao;Xu, Shuyan;Ostrikov, Kostya (Ken);
12:103:13 Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN
DOI:10.1103/PhysRevB.90.045208 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Goni, A. R.;Kaess, F.;Reparaz, J. S.;Alonso, M. I.;Garriga, M.;Callsen, G.;Wagner, M. R.;Hoffmann, A.;Sitar, Z.;
12:103:14 Structural stability and Raman scattering of InN nanowires under high pressure
DOI:10.1557/JMR.2010.0290 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:9 AU: Yao, L. D.;Luo, S. D.;Shen, X.;You, S. J.;Yang, L. X.;Zhang, S. J.;Jiang, S.;Li, Y. C.;Liu, J.;Zhu, K.;Liu, Y. L.;Zhou, W. Y.;Chen, L. C.;Jin, C. Q.;Yu, R. C.;Xie, S. S.;
12:103:15 Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
DOI:10.1088/0957-4484/21/31/315702 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Schaefer-Nolte, E. O.;Stoica, T.;Gotschke, T.;Limbach, F. A.;Sutter, E.;Sutter, P.;Gruetzmacher, D.;Calarco, R.;
12:103:16 Raman scattering study of anharmonic phonon decay in InN
DOI:10.1103/PhysRevB.83.245203 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Domenech-Amador, Nuria;Cusco, Ramon;Artus, Luis;Yamaguchi, Tomohiro;Nanishi, Yasushi;
12:103:17 Brillouin scattering determination of the surface acoustic wave velocity in In(x)Aa(1-x)AN: A probe into the elastic constants
DOI:10.1063/1.4744961 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Jimenez-Rioboo, R. J.;Cusco, R.;Oliva, R.;Domenech-Amador, N.;Prieto, C.;Ibanez, J.;Boney, C.;Bensaoula, A.;Artus, L.;
12:104:1 Knocking Down Highly-Ordered Large-Scale Nanowire Arrays
DOI:10.1021/nl903560u JN:NANO LETTERS PY:2010
TC:39 AU: Pevzner, Alexander;Engel, Yoni;Elnathan, Roey;Ducobni, Tamir;Ben-Ishai, Moshit;Reddy, Koteeswara;Shpaisman, Nava;Tsukernik, Alexander;Oksman, Mark;Patolsky, Fernando;
12:104:2 Biorecognition Layer Engineering: Overcoming Screening Limitations of Nanowire-Based FET Devices
DOI:10.1021/nl302434w JN:NANO LETTERS PY:2012
TC:36 AU: Elnathan, Roey;Kwiat, Moria;Pevzner, Alexander;Engel, Yoni;Burstein, Larisa;Khatchtourints, Artium;Lichtenstein, Arnir;Kantaev, Raisa;Patolsky, Fernando;
12:104:3 From Crystalline Germanium-Silicon Axial Heterostructures to Silicon Nanowire-Nanotubes
DOI:10.1021/nl204263k JN:NANO LETTERS PY:2012
TC:18 AU: Ben-Ishai, Moshit;Patolsky, Fernando;
12:104:4 Confinement-Guided Shaping of Semiconductor Nanowires and Nanoribbons: "Writing with Nanowires"
DOI:10.1021/nl201527h JN:NANO LETTERS PY:2012
TC:24 AU: Pevzner, Alexander;Engel, Yoni;Elnathan, Roey;Tsukernik, Alexander;Barkay, Zahava;Patolsky, Fernando;
12:104:5 Manipulating and Monitoring On-Surface Biological Reactions by Light-Triggered Local pH Alterations
DOI:10.1021/acs.nanolett.5b01578 JN:NANO LETTERS PY:2015
TC:0 AU: Peretz-Soroka, Hagit;Pevzner, Alexander;Davidi, Guy;Naddaka, Vladimir;Kwiat, Mona;Huppert, Dan;Patolsky, Fernando;
12:104:6 Wall-Selective Chemical Alteration of Silicon Nanotube Molecular Carriers
DOI:10.1021/ja109197u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:14 AU: Ben-Ishai, Moshit;Patolsky, Fernando;
12:104:7 Long-Lived Photoacid Based upon a Photochromic Reaction
DOI:10.1021/ja203851c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:20 AU: Shi, Zheng;Peng, Ping;Strohecker, Daniel;Liao, Yi;
12:104:8 Selective Cell Death by Photochemically Induced pH Imbalance in Cancer Cells
DOI:10.1021/ja3122312 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:11 AU: Yue, Xiling;Yanez, Ciceron O.;Yao, Sheng;Belfield, Kevin D.;
12:104:9 Optically-Gated Self-Calibrating Nanosensors: Monitoring pH and Metabolic Activity of Living Cells
DOI:10.1021/nl401169k JN:NANO LETTERS PY:2013
TC:9 AU: Peretz-Soroka, Hagit;Pevzner, Alexander;Davidi, Guy;Naddaka, Vladimir;Tirosh, Reuven;Flaxer, Eliezer;Patolsky, Fernando;
12:104:10 Photoswitching of Enzyme Activity by Laser-Induced pH-Jump
DOI:10.1021/ja400700x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:6 AU: Kohse, Stefanie;Neubauer, Antje;Pazidis, Alexandra;Lochbrunner, Stefan;Kragl, Udo;
12:104:11 Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor-liquid-solid technique
DOI:10.1063/1.4904198 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: LeBoeuf, J. L.;Brodusch, N.;Gauvin, R.;Quitoriano, N. J.;
12:104:12 Tissue-like Silicon Nanowires-Based Three-Dimensional Anodes for High-Capacity Lithium Ion Batteries
DOI:10.1021/acs.nanolett.5b00744 JN:NANO LETTERS PY:2015
TC:0 AU: Peled, Emanuel;Patolsky, Fernando;Golodnitsky, Diana;Freedman, Kathrin;Davidi, Guy;Schneier, Dan;
12:104:13 Visible light mediated killing of multidrug-resistant bacteria using photoacids
DOI:10.1039/c2tb00317a JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:6 AU: Luo, Yang;Wang, Chaoming;Peng, Ping;Hossain, Mainul;Jiang, Tianlun;Fu, Weiling;Liao, Yi;Su, Ming;
12:104:14 Lateral, Ge, nanowire growth on SiO2
DOI:10.1088/0957-4484/22/6/065201 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Quitoriano, Nathaniel J.;Kamins, Theodore I.;
12:104:15 Combing non-epitaxially grown nanowires for large-area electronic devices
DOI:10.1088/0957-4484/24/28/285302 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Song, Hyunwook;Lee, Min Hyung;
12:104:16 Cavity-Assisted Manipulation of Freely Rotating Silicon Nanorods in High Vacuum
DOI:10.1021/acs.nanolett.5b02302 JN:NANO LETTERS PY:2015
TC:0 AU: Kuhn, Stefan;Asenbaum, Peter;Kosloff, Alon;Sclafani, Michele;Stickler, Benjamin A.;Nimmrichter, Stefan;Hornberger, Klaus;Cheshnovsky, Ori;Patolsky, Fernando;Arndt, Markus;
12:104:17 Electrical shielding for silicon nanowire biosensor in microchannels
DOI:10.1063/1.4826689 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Chen, Songyue;Xie, Yanbo;De, Arpita;van den Berg, Albert;Carlen, Edwin T.;
12:104:18 Mechanistic Study of the Photochemical Hydroxide Ion Release from 9-Hydroxy-10-methyl-9-phenyl-9,10-dihydroacridine
DOI:10.1021/ja3031888 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:6 AU: Zhou, Dapeng;Khatmullin, Renat;Walpita, Janitha;Miller, Nicholas A.;Luk, Hoi Ling;Vyas, Shubham;Hadad, Christopher M.;Glusac, Ksenija D.;
12:104:19 Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism
DOI:10.1016/j.jcrysgro.2013.12.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: LeBoeuf, J. L.;Quitoriano, N. J.;
12:104:20 Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics
DOI:10.1063/1.3495799 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Quitoriano, Nathaniel J.;
12:104:21 Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry
DOI:10.1016/j.tsf.2010.11.092 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Boosalis, A.;Hofmann, T.;Sik, J.;Schubert, M.;
12:105:1 Dislocation Filtering in GaN Nanostructures
DOI:10.1021/nl9037455 JN:NANO LETTERS PY:2010
TC:45 AU: Colby, Robert;Liang, Zhiwen;Wildeson, Isaac H.;Ewoldt, David A.;Sands, Timothy D.;Garcia, R. Edwin;Stach, Eric A.;
12:105:2 Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography
DOI:10.1063/1.4840137 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Wu, Kui;Wei, Tongbo;Lan, Ding;Wei, Xuecheng;Zheng, Haiyang;Chen, Yu;Lu, Hongxi;Huang, Kai;Wang, Junxi;Luo, Yi;Li, Jinmin;
12:105:3 III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy
DOI:10.1063/1.3466998 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:20 AU: Wildeson, Isaac H.;Colby, Robert;Ewoldt, David A.;Liang, Zhiwen;Zakharov, Dmitri N.;Zaluzec, Nestor J.;Garcia, R. Edwin;Stach, Eric A.;Sands, Timothy D.;
12:105:4 Geometry-Induced Dislocations in Coaxial Heterostructural Nanotubes
DOI:10.1002/smll.201202051 JN:SMALL PY:2013
TC:1 AU: Yoon, Aram;Park, Jun Young;Jeon, Jong-Myeong;Cho, Yigil;Park, Jun Beom;Yi, Gyu-Chul;Oh, Kyu Hwan;Han, Heung Nam;Kim, Miyoung;
12:105:5 GaN nanostructure design for optimal dislocation filtering
DOI:10.1063/1.3491024 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Liang, Zhiwen;Colby, Robert;Wildeson, Isaac H.;Ewoldt, David A.;Sands, Timothy D.;Stach, Eric A.;Garcia, R. Edwin;
12:105:6 Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes
DOI:10.1002/adma.201102534 JN:ADVANCED MATERIALS PY:2011
TC:26 AU: Ko, Young-Ho;Kim, Je-Hyung;Jin, Li-Hua;Ko, Suk-Min;Kwon, Bong-Joon;Kim, Joosung;Kim, Taek;Cho, Yong-Hoon;
12:105:7 Highly efficient yellow photoluminescence from {11-22} InGaN multiquantum-well grown on nanoscale pyramid structure
DOI:10.1063/1.3524524 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Kim, Taek;Kim, Joosung;Yang, Moon-Seung;Lee, Sangmoon;Park, Youngsoo;Chung, U-In;Cho, Yonghoon;
12:105:8 Finite element modeling of dislocation in solids and its applications to the analysis of GaN nanostructures
DOI:10.1016/j.commatsci.2012.01.025 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:5 AU: Ye, W.;Paliwal, B.;Goh, W. H.;Cherkaoui, M.;Ougazzaden, A.;
12:105:9 Built-in Electric Field Minimization in (In, Ga)N Nanoheterostructures
DOI:10.1021/nl1044605 JN:NANO LETTERS PY:2011
TC:6 AU: Liang, Zhiwen;Wildeson, Isaac H.;Colby, Robert;Ewoldt, David A.;Zhang, Tong;Sands, Timothy D.;Stach, Eric A.;Benes, Bedrich;Garcia, R. Edwin;
12:105:10 On the elastic field and image force of dislocations in anisotropic solids and its application to GaN nanostructures
DOI:10.1080/14786435.2014.885137 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Ye, Wei;Ougazzaden, Abdallah;Cherkaoui, Mohammed;
12:105:11 Electrically driven nanopyramid green light emitting diode
DOI:10.1063/1.3681363 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Chang, S. -P.;Chen, Y. -C.;Huang, J. -K.;Cheng, Y. -J.;Chang, J. -R.;Sou, K. -P.;Kang, Y. -T.;Yang, H. -C.;Hsu, T. -C.;Kuo, H. -C.;Chang, C. -Y.;
12:105:12 Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks
DOI:10.1088/0957-4484/23/40/405602 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Park, Young S.;Holmes, Mark J.;Taylor, Robert A.;Kim, Kwang S.;Lee, Seung-Woong;Ju, HaeRi;Im, Hyunsik;
12:105:13 Analytical close-form solutions to the elastic fields of solids with dislocations and surface stress
DOI:10.1080/14786435.2013.780668 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:4 AU: Ye, Wei;Paliwal, Bhasker;Ougazzaden, Abdallah;Cherkaoui, Mohammed;
12:105:14 Elastic relaxation in 3D epitaxial nanoisland with strain-dependent surface stress effect
DOI:10.1016/j.jcrysgro.2014.10.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Ye, Wei;Chen, Bin;
12:105:15 A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open- and short-circuit photoluminescence
DOI:10.1063/1.4867238 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lim, Seung-Hyuk;Ko, Young-Ho;Cho, Yong-Hoon;
12:105:16 GaN nanostructure design for optimal dislocation filtering (vol 108, pg 074313, 2010)
DOI:10.1063/1.3518424 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:0 AU: Liang, Zhiwen;Colby, Robert;Wildeson, Isaac H.;Ewoldt, David A.;Sands, Timothy D.;Stach, Eric A.;Garcia, R. Edwin;
12:105:17 III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy (vol 108, 044303, 2010)
DOI:10.1063/1.3488972 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:0 AU: Wildeson, Isaac H.;Colby, Robert;Ewoldt, David A.;Liang, Zhiwen;Zakharov, Dmitri N.;Zaluzec, Nestor J.;Garcia, R. Edwin;Stach, Eric A.;Sands, Timothy D.;
12:105:18 Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
DOI:10.1016/j.jcrysgro.2013.11.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Allerman, A. A.;Crawford, M. H.;Lee, S. R.;Clark, B. G.;
12:105:19 Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (vol 23, 405602, 2012)
DOI:10.1088/0957-4484/23/49/499502 JN:NANOTECHNOLOGY PY:2012
TC:0 AU: Park, Young S.;Holmes, Mark J.;Taylor, Robert A.;Kim, Kwang S.;Lee, Seung-Woong;Ju, HaeRi;Im, Hyunsik;
12:105:20 Controlled Growth of Ordered Nanopore Arrays in GaN
DOI:10.1021/nl103418q JN:NANO LETTERS PY:2011
TC:2 AU: Wildeson, Isaac H.;Ewoldt, David A.;Colby, Robert;Stach, Eric A.;Sands, Timothy D.;
12:106:1 Optical gain characteristics of staggered InGaN quantum wells lasers
DOI:10.1063/1.3407564 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:73 AU: Zhao, Hongping;Tansu, Nelson;
12:106:2 Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
DOI:10.1063/1.3471804 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:51 AU: Liao, Chih-Teng;Tsai, Miao-Chan;Liou, Bo-Ting;Yen, Sheng-Horng;Kuo, Yen-Kuang;
12:106:3 Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells
DOI:10.1063/1.4751438 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Yildirim, Hasan;Aslan, Bulent;
12:106:4 Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications
DOI:10.1016/j.scriptamat.2012.10.020 JN:SCRIPTA MATERIALIA PY:2013
TC:3 AU: Xia, Congxin;Zhang, Heng;Jia, Yalei;Wei, Shuyi;Jia, Yu;
12:106:5 Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
DOI:10.1063/1.3293298 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Li, T.;Fischer, A. M.;Wei, Q. Y.;Ponce, F. A.;Detchprohm, T.;Wetzel, C.;
12:106:6 Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
DOI:10.1063/1.4872251 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Yildirim, Hasan;Aslan, Bulent;
12:106:7 Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission
DOI:10.1063/1.4863208 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Fang, Z. L.;Li, Q. F.;Shen, X. Y.;Xiong, H.;Cai, J. F.;Kang, J. Y.;Shen, W. Z.;
12:106:8 Donor impurity states in wurtzite InGaN staggered quantum wells
DOI:10.1063/1.3662848 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Xia, Congxin;Jia, Yalei;Wei, Shuyi;Jia, Yu;Spector, Harold N.;
12:106:9 Investigation of blue InGaN light-emitting diodes with step-like quantum well
DOI:10.1007/s00339-011-6458-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:9 AU: Tsai, Miao-Chan;Yen, Sheng-Horng;Kuo, Yen-Kuang;
12:106:10 Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
DOI:10.1063/1.3340939 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Kim, Kyu Sang;Kim, Jin Ha;Jung, Su Jin;Park, Yong Jo;Cho, S. N.;
12:106:11 Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
DOI:10.1063/1.3300840 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Park, Seoung-Hwan;Ahn, Doyeol;Koo, Bun-Hei;Oh, Jae-Eung;
12:106:12 Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application
DOI:10.1016/j.matchemphys.2012.03.087 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Lee, Kai-Hsuan;Chang, Ping-Chuan;Chang, Shoou-Jinn;Su, Yan-Kuin;Wu, San-Lein;Pilkuhn, Manfred;
12:106:13 White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands
DOI:10.1088/0957-4484/22/31/315706 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Fang, Zhilai;
12:106:14 Significant increase of crystalline quality and green emission by an interface modification of InGaN/GaN quantum wells
DOI:10.1007/s00339-010-6113-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Lin, Youxi;Fang, Zhilai;
12:106:15 A critical factor affecting on the performance of blue-violet InGaN multiquantum well laser diodes: Nonradiative centers
DOI:10.1063/1.3481091 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Shin, D. M.;Park, J.;Nguyen, D. H.;Jang, Y. D.;Yee, K. J.;Lee, D.;Choi, Y. H.;Jung, S. K.;Noh, M. S.;
12:106:16 InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies
DOI:10.1063/1.3554421 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Fang, Z. L.;Lin, Y. X.;Kang, J. Y.;
12:106:17 Photoemission of Si 1s -> 2p(z) transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection
DOI:10.1063/1.3456553 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Antoni, Thomas;Carras, Mathieu;Marcadet, Xavier;Vinter, Borge;Berger, Vincent;
12:106:18 Terahertz electroluminescence from Be delta-doped GaAs/AlAs quantum well
DOI:10.1063/1.3463467 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Li, Su Mei;Zheng, Wei Min;Wu, Ai Ling;Cong, Wei Yan;Liu, Jing;Chu, Ning Ning;Song, Ying Xin;
12:107:1 Two-dimensional Mn structure on the GaN growth surface and evidence for room-temperature spin ordering
DOI:10.1103/PhysRevB.83.165407 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Wang, Kangkang;Takeuchi, Noboru;Chinchore, Abhijit V.;Lin, Wenzhi;Liu, Yinghao;Smith, Arthur R.;
12:107:2 Adsorption and diffusion of 3d transition metal atoms on the GaN(0001) surface
DOI:10.1063/1.3653822 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Gonzalez-Hernandez, Rafael;Lopez-Perez, William;Guadalupe Moreno-Armenta, Maria;Rodriguez M, Jairo Arbey;
12:107:3 Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculations
DOI:10.1016/j.apsusc.2012.11.094 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Guerrero-Sanchez, J.;Cocoletzi, Gregorio H.;Rivas-Silva, J. F.;Takeuchi, Noboru;
12:107:4 Manganese 3x3 and root 3 x root 3-R30 degrees structures and structural phase transition on omega-GaN(000(1)over-bar) studied by scanning tunneling microscopy and first-principles theory
DOI:10.1103/PhysRevB.87.165426 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Chinchore, Abhijit V.;Wang, Kangkang;Shi, Meng;Mandru, Andrada;Liu, Yinghao;Haider, Muhammad;Smith, Arthur R.;Ferrari, Valeria;Andrea Barral, Maria;Ordejon, Pablo;
12:107:5 Interface formation of scandium nitride on the GaN(0001) surface: A first-principles study
DOI:10.1016/j.commatsci.2012.12.020 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:3 AU: Lopez-Perez, William;Arbey Rodriguez, Jairo;Gonzalez-Hernandez, Rafael;
12:107:6 Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study
DOI:10.1063/1.4833245 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Qin, Zhenzhen;Xiong, Zhihua;Qin, Guangzhao;Wan, Qixin;
12:107:7 Energetics and magnetism of Co-doped GaN(0001) surfaces: A first-principles study
DOI:10.1063/1.4904055 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Qin, Zhenzhen;Xiong, Zhihua;Qin, Guangzhao;Chen, Lanli;
12:107:8 Vanadium adsorption and incorporation at the GaN(0001) surface: A first-principles study
DOI:10.1103/PhysRevB.81.195407 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Gonzalez-Hernandez, Rafael;Lopez-Perez, William;Guadalupe Moreno-Armenta, Maria;Arbey Rodriguez M, Jairo;
12:107:9 Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000(1)over-bar)
DOI:10.1063/1.3682487 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Chinchore, Abhijit;Wang, Kangkang;Shi, Meng;Liu, Yinghao;Smith, Arthur R.;
12:107:10 Nickel adsorption and incorporation on a 2 x 2-T-4 GaN(0001) surface: A DFT study
DOI:10.1016/j.apsusc.2012.11.148 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Gonzalez-Hernandez, Rafael;Lopez-Perez, William;Arbey Rodriguez M, Jairo;
12:107:11 Structural stability of scandium on nonpolar GaN (1 1 (2)over-bar 0) and (1 0 (1)over-bar 0) surfaces: A first-principles study
DOI:10.1016/j.apsusc.2013.10.057 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Gonzalez-Hernandez, Rafael;Martinez, Gustavo;Lopez-Perez, William;Arbey Rodriguez, Jairo;
12:107:12 Reactive interface formation and Co-induced (root 7x root 7) superstructure on a GaN(0001) pseudo-(1x1) substrate surface
DOI:10.1103/PhysRevB.81.233302 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Li, H. D.;Zhong, G. H.;Lin, H. Q.;Xie, M. H.;
12:107:13 Theoretical study of Ni adsorption on the GaN(0001) surface
DOI:10.1016/j.apsusc.2010.04.078 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Gonzalez-Hernandez, Rafael;Lopez, William;Ortega, Cesar;Guadalupe Moreno-Armenta, Maria;Arbey Rodriguez, Jairo;
12:107:14 Structural stability and electronic structure of iron adsorption on the GaN(0001) surface
DOI:10.1016/j.apsusc.2011.01.100 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Gonzalez-Hernandez, Rafael;Lopez Perez, William;Arbey Rodriguez M, Jairo;
12:107:15 Incorporation of iron on the clean and gallium-bilayer GaN(0001) surface
DOI:10.1063/1.3536788 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Gonzalez-Hernandez, Rafael;Lopez, William;Moreno-Armenta, Maria G.;Arbey Rodriguez, Jairo;
12:107:16 Initial stages of the growth of Al on GaN(0001)
DOI:10.1016/j.jcrysgro.2010.05.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Garcia-Diaz, Reyes;Cocoletzi, Gregorio H.;Takeuchi, Noboru;
12:107:17 Ab-initio studies of the adsorption of a B ad-atom on GaN surfaces
DOI:10.1016/j.jcrysgro.2011.07.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Palomino-Rojas, L.;Garcia-Diaz, Reyes;Cocoletzi, Gregorio H.;Takeuchi, Noboru;
12:107:18 Composition dependent bilayer atomic ordering in AlxGa1-xN films examined by polarization-dependent extended x-ray absorption fine structure
DOI:10.1063/1.4704678 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Woicik, J. C.;Ludwig, K. F., Jr.;Moustakas, T. D.;
12:107:19 Ohmic contacts properties of Ni/Ag metallization scheme on p-type GaN
DOI:10.1016/j.jnoncrysol.2009.11.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:4 AU: Chuah, L. S.;Hassan, Z.;Abu Hassan, H.;
12:107:20 Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
DOI:10.1063/1.3574607 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Wu, Z. H.;Kawai, Y.;Fang, Y. -Y.;Chen, C. Q.;Kondo, H.;Hori, M.;Honda, Y.;Yamaguchi, M.;Amano, H.;
12:107:21 Iron on GaN(0001) pseudo-1 x 1 (1+1/12) investigated by scanning tunneling microscopy and first- principles theory
DOI:10.1063/1.4874607 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Wenzhi;Mandru, Andrada-Oana;Smith, Arthur R.;Takeuchi, Noboru;Al-Brithen, Hamad A. H.;
12:107:22 Formation of manganese delta-doped atomic layer in wurtzite GaN
DOI:10.1063/1.4750034 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Shi, Meng;Chinchore, Abhijit;Wang, Kangkang;Mandru, Andrada-Oana;Liu, Yinghao;Smith, Arthur R.;
12:107:23 Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence
DOI:10.1016/j.jmmm.2011.09.021 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:6 AU: Husnain, G.;Yao Shu-De;Ahmad, Ishaq;Rafique, H. M.;Mahmoodd, Arshad;
12:107:24 Effect of thermal annealing on the Ir/Ag contact to p-type GaN
DOI:10.1016/j.jnoncrysol.2010.06.012 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:2 AU: Chuah, L. S.;Hassan, Z.;Teo, S. G.;
12:107:25 Role of substrate temperature on structure and magnetization of Cr-implanted GaN thin film
DOI:10.1007/s00339-014-8658-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Husnain, G.;Yao Shu-De;Ahmad, Ishaq;Li Lin;
12:107:26 Diluted magnetic semiconductor effects in Mn-implanted silicon carbide
DOI:10.1063/1.3581142 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Komarov, A. V.;Los, A. V.;Ryabchenko, S. M.;Romanenko, S. M.;
12:108:1 Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
DOI:10.1063/1.3586767 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Cosendey, Gatien;Carlin, Jean-Francois;Kaufmann, Nils A. K.;Butte, Raphael;Grandjean, Nicolas;
12:108:2 Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
DOI:10.1063/1.3483133 JN:APPLIED PHYSICS LETTERS PY:2010
TC:33 AU: Lu, Tien-Chang;Chen, Shih-Wei;Wu, Tzeng-Tsong;Tu, Po-Min;Chen, Chien-Kang;Chen, Cheng-Hung;Li, Zhen-Yu;Kuo, Hao-Chung;Wang, Shing-Chung;
12:108:3 Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source
DOI:10.1063/1.3686922 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Wong, Man Hoi;Wu, Feng;Hurni, Christophe A.;Choi, Soojeong;Speck, James S.;Mishra, Umesh K.;
12:108:4 High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
DOI:10.1063/1.3614434 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Gacevic, Z.;Fernandez-Garrido, S.;Rebled, J. M.;Estrade, S.;Peiro, F.;Calleja, E.;
12:108:5 Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
DOI:10.1063/1.4757873 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Cosendey, Gatien;Castiglia, Antonino;Rossbach, Georg;Carlin, Jean-Francois;Grandjean, Nicolas;
12:108:6 A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.11.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Gacevic, Z.;Gomez, V. J.;Garcia Lepetit, N.;Soto Rodriguez, P. E. D.;Bengoechea, A.;Fernandez-Garrido, S.;Noetzel, R.;Calleja, E.;
12:108:7 Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
DOI:10.1063/1.4846218 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Gacevic, Z.;Rossbach, G.;Butte, R.;Reveret, F.;Glauser, M.;Levrat, J.;Cosendey, G.;Carlin, J. -F.;Grandjean, N.;Calleja, E.;
12:108:8 Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
DOI:10.1016/j.jcrysgro.2014.09.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:2 AU: Berger, C.;Dadgar, A.;Blaesing, J.;Lesnik, A.;Veit, P.;Schmidt, G.;Hempel, T.;Christen, J.;Krost, A.;Strittmatter, A.;
12:108:9 InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3517138 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Gacevic, Z.;Fernandez-Garrido, S.;Hosseini, D.;Estrade, S.;Peiro, F.;Calleja, E.;
12:108:10 Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
DOI:10.1063/1.4805054 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Gacevic, Z.;Eljarrat, A.;Peiro, F.;Calleja, E.;
12:108:11 Importance of growth temperature on achieving lattice-matched and strained InAIN/GaN heterostructure by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4895395 JN:AIP ADVANCES PY:2014
TC:2 AU: Jeganathan, K.;Shimizu, M.;
12:108:12 In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
DOI:10.1016/j.jcrysgro.2012.08.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Berger, Christoph;Dadgar, Armin;Blaesing, Juergen;Krost, Alois;
12:108:13 Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers
DOI:10.1063/1.4885384 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, Wen-Jie;Hu, Xiao-Long;Ying, Lei-Ying;Zhang, Jiang-Yong;Zhang, Bao-Ping;
12:108:14 Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
DOI:10.1063/1.4890670 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Schmidt, Gordon;Mueller, Marcus;Veit, Peter;Bertram, Frank;Christen, Juergen;Glauser, Marlene;Carlin, Jean-Francois;Cosendey, Gatien;Butte, Raphael;Grandjean, Nicolas;
12:108:15 Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex situ X-ray diffraction
DOI:10.1016/j.msea.2010.04.053 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:3 AU: Berger, C.;Moser, P.;Dadgar, A.;Blasing, J.;Clos, R.;Krost, A.;
12:108:16 Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
DOI:10.1063/1.4799600 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zhang, Wei;Liu, Peichi;Jackson, Biyun;Sun, Tianshu;Huang, Shyh-Jer;Hsu, Hsiao-Chiu;Su, Yan-Kuin;Chang, Shoou-Jinn;Li, Lei;Li, Ding;Wang, Lei;Hu, XiaoDong;Xie, Y. H.;
12:108:17 The effect of annealing on the surface morphology of strained and unstrained InxAl1-xN thin films
DOI:10.1016/j.jcrysgro.2010.02.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Brice, H. R.;Sadler, T. C.;Kappers, M. J.;Oliver, R. A.;
12:108:18 GaN-based LEDs with Ar plasma treatment
DOI:10.1016/j.mssp.2011.08.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:1 AU: Kuo, D. S.;Lam, K. T.;Wen, K. H.;Chang, S. J.;Ko, T. K.;Hon, S. J.;
12:109:1 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
DOI:10.1016/j.jcrysgro.2013.09.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:8 AU: Kim, Jeomoh;Lochner, Zachary;Ji, Mi-Hee;Choi, Suk;Kim, Hee Jin;Kim, Jin Soo;Dupuis, Russell D.;Fischer, Alec M.;Juday, Reid;Huang, Yu;Li, Ti;Huang, Jingyi Y.;Ponce, Fernando A.;Ryou, Jae-Hyun;
12:109:2 Multicharacterization approach for studying InAl(Ga) N/Al(Ga) N/GaN heterostructures for high electron mobility transistors
DOI:10.1063/1.4903227 JN:AIP ADVANCES PY:2014
TC:1 AU: Naresh-Kumar, G.;Vilalta-Clemente, A.;Pandey, S.;Skuridina, D.;Behmenburg, H.;Gamarra, P.;Patriarche, G.;Vickridge, I.;di Forte-Poisson, M. A.;Vogt, P.;Kneissl, M.;Morales, M.;Ruterana, P.;Cavallini, A.;Cavalcoli, D.;Giesen, C.;Heuken, M.;Trager-Cowan, C.;
12:109:3 Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
DOI:10.1016/j.jcrysgro.2012.03.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:11 AU: Zhu, J. J.;Fan, Y. M.;Zhang, H.;Lu, G. J.;Wang, H.;Zhao, D. G.;Jiang, D. S.;Liu, Z. S.;Zhang, S. M.;Chen, G. F.;Zhang, B. S.;Yang, H.;
12:109:4 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
DOI:10.1016/j.jcrysgro.2013.10.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Choi, Suk;Kim, Hee Jin;Lochner, Zachary;Kim, Jeomoh;Dupuis, Russell D.;Fischer, Alec M.;Juday, Reid;Huang, Yu;Li, Ti;Huang, Jingyi Y.;Ponce, Fernando A.;Ryou, Jae-Hyun;
12:109:5 Compositional instability in InAlN/GaN lattice-matched epitaxy
DOI:10.1063/1.3690890 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Wei, Q. Y.;Li, T.;Huang, Y.;Huang, J. Y.;Chen, Z. T.;Egawa, T.;Ponce, F. A.;
12:109:6 Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
DOI:10.1016/j.actamat.2010.04.001 JN:ACTA MATERIALIA PY:2010
TC:12 AU: Manuel, J. M.;Morales, F. M.;Lozano, J. G.;Gonzalez, D.;Garcia, R.;Lim, T.;Kirste, L.;Aidam, R.;Ambacher, O.;
12:109:7 Bias dependent two-channel conduction in InAlN/AlN/GaN structures
DOI:10.1063/1.3330627 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Leach, J. H.;Ni, X.;Li, X.;Wu, M.;Ozgur, U.;Morkoc, H.;Zhou, L.;Cullen, D. A.;Smith, D. J.;Cheng, H.;Kurdak, C.;Meyer, J. R.;Vurgaftman, I.;
12:109:8 Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD
DOI:10.1039/c4tc00480a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Smith, M. D.;Taylor, E.;Sadler, T. C.;Zubialevich, V. Z.;Lorenz, K.;Li, H. N.;O'Connell, J.;Alves, E.;Holmes, J. D.;Martin, R. W.;Parbrook, P. J.;
12:109:9 Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
DOI:10.1063/1.3446891 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Choi, Suk;Kim, Hee Jin;Lochner, Zachary;Zhang, Yun;Lee, Yi-Che;Shen, Shyh-Chiang;Ryou, Jae-Hyun;Dupuis, Russell D.;
12:109:10 Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
DOI:10.1016/j.jcrysgro.2013.07.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Hiroki, Masanobu;Oda, Yasuhiro;Watanabe, Noriyuki;Maeda, Narihiko;Yokoyama, Haruki;Kumakura, Kazuhide;Yamamoto, Hideki;
12:109:11 Growth and characterization of In0.17Al0.83N thin films on lattice-matched GaN by molecular beam epitaxy
DOI:10.1016/j.mssp.2014.08.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Gan, Xuewei;Wang, Zheng;Wang, Wei;Wang, Ti;Wu, Hao;Liu, Chang;
12:109:12 Structural and optical properties of Ga auto-incorporated InAlN epilayers
DOI:10.1016/j.jcrysgro.2014.09.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Taylor, E.;Smith, M. D.;Sadler, T. C.;Lorenz, K.;Li, H. N.;Alves, E.;Parbrook, P. J.;Martin, R. W.;
12:109:13 Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4896849 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kong, W.;Mohanta, A.;Roberts, A. T.;Jiao, W. Y.;Fournelle, J.;Kim, T. H.;Losurdo, M.;Everitt, H. O.;Brown, A. S.;
12:109:14 Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.09.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Zhou, Kun;Ikeda, Masao;Liu, Jianping;Zhang, Shuming;Li, Zengcheng;Feng, Meixin;Tian, Aiqin;Wen, Pengyan;Li, Deyao;Zhang, Liqun;Yang, Hui;
12:109:15 The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures
DOI:10.1063/1.4818645 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Smith, Matthew D.;Sadler, Thomas C.;Li, Haoning;Zubialevich, Vitaly Z.;Parbrook, Peter J.;
12:109:16 Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
DOI:10.1063/1.3358192 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Leach, J. H.;Wu, M.;Ni, X.;Li, X.;Xie, J.;Ozgur, U.;Morkoc, H.;Paskova, T.;Preble, E.;Evans, K. R.;Lu, Chang-Zhi;
12:109:17 Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing
DOI:10.1016/j.tsf.2013.10.086 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Takimoto, Takuma;Takeshita, Koji;Nakamura, Seiji;Okumura, Tsugunori;
12:110:1:1 Characterization of M-plane GaN film grown on beta-LiGaO2 (100) by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2011.01.275 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Shih, Cheng-Hung;Lo, Ikai;Pang, Wen-Yuan;Wang, Ying-Chieh;Chou, Mitch M. C.;
12:110:1:2 Improvement of M-plane GaN thin film grown on pre-annealing beta-LiGaO2 (100) substrate
DOI:10.1016/j.jcrysgro.2011.12.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Shih, Cheng-Hung;Lo, Ikai;Wang, Ying-Chieh;Yang, Chen-Chi;Chou, Mitch M. C.;
12:110:1:3 Growth of A-plane GaN on (010) LiGaO2 by plasma-assisted MBE
DOI:10.1016/j.jcrysgro.2010.02.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Schuber, R.;Chou, M. M. C.;Vincze, P.;Schimmel, Th.;Schaadt, D. M.;
12:110:1:4 Growth of nonpolar ZnO Films on (100) beta-LiGaO2 substrate by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.08.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Lee, Chun-Yu;Chen, Chenlong;Chang, Liuwen;Chou, Mitch M. C.;
12:110:1:5 Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE
DOI:10.1016/j.jcrysgro.2010.10.118 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Schuber, R.;Chen, Y. L.;Shih, C. H.;Huang, T. H.;Vincze, P.;Lo, I.;Chang, L. W.;Schimmel, Th.;Chou, M. M. C.;Schaadt, D. M.;
12:110:1:6 Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2010.06.031 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Schuber, R.;Chou, M. M. C.;Schaadt, D. M.;
12:110:1:7 Characterization of M-plane GaN thin film grown on pre-annealing beta-LiGaO2 (100) substrate
DOI:10.1016/j.tsf.2012.11.036 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Shih, Cheng-Hung;Lo, Ikai;Wang, Ying-Chieh;Yang, Chen-Chi;Chou, Mitch M. C.;
12:110:2:1 Growth of wurtzite and zinc-blende phased GaN on silicon (100) substrate with sputtered AlN buffer layer
DOI:10.1016/j.jcrysgro.2013.07.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Pang, Wen-Yuan;Lo, Ikai;Wu, Sean;Lin, Zhi-Xun;Shih, Cheng-Hung;Lin, Yu-Chiao;Wang, Ying-Chieh;Hu, Chia-Hsuan;Hsu, Garyz. L.;
12:110:2:2 Improved quality of nonpolar m-plane GaN [1010] on LiAlO2 substrate using a modified chemical vapor deposition
DOI:10.1063/1.3273493 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Chou, Mitch M. C.;Hang, Da-Ren;Chang, Liuwen;Chen, Chenlong;Yang, Wen-Fu;Li, Chu-An;Wu, Jih-Jen;
12:110:2:3 Growth and characterization of a-plane (11(2)over-bar0) GaN films on (010) LiGaO2 substrate by chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.10.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Chou, Mitch M. C.;Chen, Chenlong;Chang, Chunyu;Li, Chu-An;
12:110:2:4 Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.scriptamat.2011.03.017 JN:SCRIPTA MATERIALIA PY:2011
TC:6 AU: Rajpalke, Mohana K.;Roul, Basanta;Kumar, Mahesh;Bhat, Thirumaleshwara N.;Sinha, Neeraj;Krupanidhi, S. B.;
12:110:2:5 Growth of nonpolar m-plane GaN (10-10) single crystal on (100) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.11.160 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Chou, Mitch M. C.;Chen, Chenlong;Lu, Jin-Wei;Li, Chu-An;Hsu, Chuck W. C.;Liu, Calvin;
12:110:2:6 Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates
DOI:10.1016/j.jcrysgro.2015.04.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Shon, J. W.;Ohta, J.;Inoue, S.;Kobayashi, A.;Fujioka, H.;
12:110:3:1 Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4902892 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Mukundan, Shruti;Mohan, Lokesh;Chandan, Greeshma;Roul, Basanta;Krupanidhi, S. B.;
12:110:3:2 Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.08.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Woo, Seohwi;Kim, Minho;So, Byeongchan;Yoo, Guenho;Jang, Jongjin;Lee, Kyuseung;Nam, Okhyun;
12:110:3:3 Growth and properties of m-plane GaN on m-plane sapphire by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.12.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Paduano, Qing S.;Weyburne, David W.;Tomich, David H.;
12:110:3:4 Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of m-GaN on m-sapphire
DOI:10.1063/1.3553019 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Lee, Hyun-Jae;Fujii, K.;Goto, T.;Yao, T.;Chang, Jiho;
12:110:3:5 Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE
DOI:10.1016/j.jcrysgro.2010.10.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Rajpalke, Mohana K.;Bhat, Thirumaleshwara N.;Roul, Basanta;Kumar, Mahesh;Misra, P.;Kukreja, L. M.;Sinha, Neeraj;Krupanidhi, S. B.;
12:110:4:1 InGaN/GaN single-quantum-well microdisks
DOI:10.1063/1.4729007 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Hsu, Yu-Chi;Lo, Ikai;Shih, Cheng-Hung;Pang, Wen-Yuan;Hu, Chia-Hsuan;Wang, Ying-Chieh;Chou, Mitch M. C.;
12:110:4:2 Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4812871 JN:AIP ADVANCES PY:2013
TC:0 AU: Lo, Ikai;Pang, Wen-Yuan;Chen, Wen-Yen;Hsu, Yu-Chi;Hsieh, Chia-Ho;Shih, Cheng-Hung;Chou, Mitch M. C.;Hsu, Tzu-Min;Hsu, Gary Z. L.;
12:110:4:3 Self-confined GaN heterophased quantum wells
DOI:10.1063/1.3442497 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Lo, Ikai;Hsu, Yu-Chi;Hsieh, Chia-Ho;Pang, Wen-Yuan;Chou, Mitch M. C.;Chen, Yen-Liang;Shih, Cheng-Hung;Wang, Ying-Chieh;
12:110:4:4 Electrical contact for wurtzite GaN microdisks
DOI:10.1063/1.4894080 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lo, Ikai;Wang, Ying-Chieh;Hsu, Yu-Chi;Shih, Cheng-Hung;Pang, Wen-Yuan;You, Shuo-Ting;Hu, Chia-Hsuan;Chou, Mitch M. C.;Hsu, Gary Z. L.;
12:110:4:5 Green light emission by InGaN/GaN multiple-quantum-well microdisks
DOI:10.1063/1.4868417 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hsu, Yu-Chi;Lo, Ikai;Shih, Cheng-Hung;Pang, Wen-Yuan;Hu, Chia-Hsuan;Wang, Ying-Chieh;Tsai, Cheng-Da;Chou, Mitch M. C.;Hsu, Gary Z. L.;
12:110:5:1 Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0001) sapphire
DOI:10.1016/j.scriptamat.2010.09.012 JN:SCRIPTA MATERIALIA PY:2011
TC:10 AU: Meng, F. Y.;Han, I.;McFelea, H.;Lindow, E.;Bertram, R.;Werkhoven, C.;Arena, C.;Mahajan, S.;
12:110:5:2 Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
DOI:10.1016/j.jcrysgro.2009.11.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Ashraf, H.;Rao, D. V. Sridhara;Gogova, D.;Siche, D.;Fornari, R.;Humphreys, C. J.;Hageman, P. R.;
12:110:5:3 Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.05.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Meng, F. Y.;Han, I.;McFelea, H.;Lindow, E.;Bertram, R.;Werkhoven, C.;Arena, C.;Mahajan, S.;
12:110:5:4 Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers
DOI:10.1016/j.scriptamat.2011.04.020 JN:SCRIPTA MATERIALIA PY:2011
TC:1 AU: Meng, F. Y.;Han, I.;McFelea, H.;Lindow, E.;Bertram, R.;Werkhoven, C.;Arena, C.;Mahajan, S.;
12:111:1 Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications
DOI:10.1063/1.4729030 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Xue, JunShuai;Zhang, JinCheng;Zhang, Kai;Zhao, Yi;Zhang, LinXia;Ma, XiaoHua;Li, XiaoGang;Meng, Fanna;Hao, Yue;
12:111:2 Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
DOI:10.1063/1.3675453 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Xue, JunShuai;Zhang, JinCheng;Hou, YaoWei;Zhou, Hao;Zhang, JinFeng;Hao, Yue;
12:111:3 Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
DOI:10.1063/1.4802431 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Zhang, Kai;Xue, JunShuai;Cao, MengYi;Yang, LiYuan;Chen, YongHe;Zhang, JinCheng;Ma, XiaoHua;Hao, Yue;
12:111:4 High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.11.157 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:23 AU: Xue, JunShuai;Hao, Yue;Zhou, XiaoWei;Zhang, JinCheng;Yang, ChuanKai;Ou, XinXiu;Shi, LinYu;Wang, Hao;Yang, LinAn;Zhang, JinFeng;
12:111:5 Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.01.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Xue, JunShuai;Zhang, JinCheng;Hao, Yue;
12:111:6 Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2011.12.080 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:11 AU: Xue, JunShuai;Zhang, JinCheng;Zhang, Wei;Li, Liang;Meng, FanNa;Lu, Ming;Ning, Jing;Hao, Yue;
12:111:7 Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition
DOI:10.1063/1.3567529 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Xue, JunShuai;Hao, Yue;Zhang, JinCheng;Zhou, XiaoWei;Liu, ZiYang;Ma, JunCai;Lin, ZhiYu;
12:111:8 Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition
DOI:10.1063/1.4903293 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhao, Yi;Xue, JunShuai;Zhang, JinCheng;Hao, Yue;
12:111:9 Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application
DOI:10.1007/s13391-013-2254-8 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Binh Tinh Tran;Chang, Edward Yi;
12:111:10 Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
DOI:10.1063/1.4739408 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Meng, Fanna;Zhang, Jincheng;Zhou, Hao;Ma, Juncai;Xue, Junshuai;Dang, Lisha;Zhang, Linxia;Lu, Ming;Ai, Shan;Li, Xiaogang;Hao, Yue;
12:111:11 Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)
DOI:10.1007/s11664-012-1967-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Uddin, Md Rakib;Pandikunta, Mahesh;Mansurov, Vladimir;Sohal, Sandeep;Myasishchev, Denis;Guryanov, Georgiy M.;Kuryatkov, Vladimir;Holtz, Mark;Nikishin, Sergey;
12:111:12 A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
DOI:10.1063/1.4765086 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Ding, Jieqin;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Chen, Hong;Bi, Yang;Deng, Qinwen;Zhang, Jingwen;Hou, Xun;
12:111:13 Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
DOI:10.1063/1.3456561 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Lim, T.;Aidam, R.;Kirste, L.;Waltereit, P.;Quay, R.;Mueller, S.;Ambacher, O.;
12:111:14 Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes
DOI:10.1063/1.3544425 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Sakai, Yusuke;Khai, Pum Chian;Ichikawa, Junki;Egawa, Takashi;Jimbo, Takashi;
12:111:15 Molecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloys
DOI:10.1063/1.3456009 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Wang, Z. Y.;Shi, B. M.;Cai, Y.;Wang, N.;Xie, M. H.;
12:111:16 MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content
DOI:10.1016/j.jcrysgro.2010.12.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Sugita, K.;Tanaka, M.;Sasamoto, K.;Bhuiyan, A. G.;Hashimoto, A.;Yamamoto, A.;
12:111:17 Reflection high energy electron diffraction investigation and comparison of the initial stage during molecular beam epitaxy of AlN on Si(111) and Si(110) substrates
DOI:10.1116/1.3570922 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Mansurov, Vladimir;Xu, Xiaoyan;Pandikunta, Mahesh;Uddin, Rakib;Nikishin, Sergey;
12:111:18 Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots
DOI:10.1016/j.tsf.2012.05.040 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Ke, Wen-Cheng;Wu, Yue-Han;Houng, Wei-Chung;Wei, Chih-An;
12:112:1 Charge Carrier Trapping and Acoustic Phonon Modes in Single CdTe Nanowires
DOI:10.1021/nn3010526 JN:ACS NANO PY:2012
TC:18 AU: Lo, Shun Shang;Major, Todd A.;Petchsang, Nattasamon;Huang, Libai;Kuno, Masaru K.;Hartland, Gregory V.;
12:112:2 Laser-Induced Charge Separation in CdSe Nanowires
DOI:10.1021/nl200770h JN:NANO LETTERS PY:2011
TC:22 AU: Schaefer, Sebastian;Wang, Zhe;Zierold, Robert;Kipp, Tobias;Mews, Alf;
12:112:3 Experimental Determination of Single CdSe Nanowire Absorption Cross Sections through Photothermal Imaging
DOI:10.1021/nn901172s JN:ACS NANO PY:2010
TC:31 AU: Giblin, Jay;Syed, Muhammad;Banning, Michael T.;Kuno, Masaru;Hartland, Greg;
12:112:4 Single Nanowire Extinction Spectroscopy
DOI:10.1021/nl201679d JN:NANO LETTERS PY:2011
TC:24 AU: Giblin, Jay;Vietmeyer, Felix;McDonald, Matthew P.;Kuno, Masaru;
12:112:5 Transient Rayleigh Scattering: A New Probe of Picosecond Carrier Dynamics in a Single Semiconductor Nanowire
DOI:10.1021/nl302767u JN:NANO LETTERS PY:2012
TC:10 AU: Montazeri, Mohammad;Jackson, Howard E.;Smith, Leigh M.;Yarrison-Rice, Jan M.;Kang, Jung-Hyun;Gao, Qiang;Tan, Hark Hoe;Jagadish, Chennupati;
12:112:6 Carrier recombination dynamics in individual CdSe nanowires
DOI:10.1103/PhysRevB.83.115319 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Vietmeyer, Felix;Frantsuzov, Pavel A.;Janko, Boldizsar;Kuno, Masaru;
12:112:7 Charge separation in CdSe/CdTe hetero-nanowires measured by electrostatic force microscopy
DOI:10.1063/1.3676278 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Schaefer, Sebastian;Reich, Aina;Wang, Zhe;Kipp, Tobias;Mews, Alf;
12:112:8 Ultrafast Spectroscopy of Quantum Confined States in a Single CdSe Nanowire
DOI:10.1021/nl400259f JN:NANO LETTERS PY:2013
TC:7 AU: Schumacher, Thorsten;Giessen, Harald;Lippitz, Markus;
12:112:9 Phonon confinement and plasmon-phonon interaction in nanowire-based quantum wells
DOI:10.1103/PhysRevB.83.245327 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Ketterer, Bernt;Arbiol, Jordi;Fontcuberta i Morral, Anna;
12:112:10 Solution-Liquid-Solid Synthesis of Semiconductor Nanowires Using Clusters as Single-Source Precursors
DOI:10.1002/smll.201100343 JN:SMALL PY:2011
TC:13 AU: Wang, Zhe;Li, Zhen;Kornowski, Andreas;Ma, Xuedan;Myalitsin, Anton;Mews, Alf;
12:112:11 Controlled Electrodeposition of Bismuth Nanocatalysts for the Solution-Liquid-Solid Synthesis of CdSe Nanowires on Transparent Conductive Substrates
DOI:10.1021/ja408265s JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:4 AU: Reim, Natalia;Littig, Alexander;Behn, Dino;Mews, Alf;
12:112:12 Electric Field-Induced Emission Enhancement and Modulation in Individual CdSe Nanowires
DOI:10.1021/nn3033997 JN:ACS NANO PY:2012
TC:5 AU: Vietmeyer, Felix;Tchelidze, Tamar;Tsou, Veronica;Janko, Boldizsar;Kuno, Masaru;
12:112:13 Fluorescence Modulation of Single CdSe Nanowires by Charge Injection through the Tip of an Atomic-Force Microscope
DOI:10.1103/PhysRevLett.107.137403 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:7 AU: Schaefer, Sebastian;Wang, Zhe;Kipp, Tobias;Mews, Alf;
12:112:14 One-Dimensional Heterostructures of Single-Walled Carbon Nanotubes and CdSe Nanowires
DOI:10.1002/smll.200901366 JN:SMALL PY:2010
TC:11 AU: Fu, Non;Li, Zhen;Myalitsin, Anton;Scolari, Matteo;Weitz, R. Thomas;Burghard, Marko;Mews, Alf;
12:113:1 Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN
DOI:10.1103/PhysRevB.84.125201 JN:PHYSICAL REVIEW B PY:2011
TC:23 AU: Rauch, Christian;Makkonen, Ilja;Tuomisto, Filip;
12:113:2 Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
DOI:10.1063/1.3654155 JN:APPLIED PHYSICS LETTERS PY:2011
TC:27 AU: Sang, Liwen;Liao, Meiyong;Ikeda, Naoki;Koide, Yasuo;Sumiya, Masatomo;
12:113:3 Point defects introduced by InN alloying into InxGa1-xN probed using a monoenergetic positron beam
DOI:10.1063/1.4795815 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Uedono, A.;Tsutsui, T.;Watanabe, T.;Kimura, S.;Zhang, Y.;Lozac'h, M.;Sang, L. W.;Ishibashi, S.;Sumiya, M.;
12:113:4 Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam
DOI:10.1063/1.4732141 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Uedono, A.;Ishibashi, S.;Watanabe, T.;Wang, X. Q.;Liu, S. T.;Chen, G.;Sang, L. W.;Sumiya, M.;Shen, B.;
12:113:5 On the formation of vacancy defects in III-nitride semiconductors
DOI:10.1016/j.jcrysgro.2011.12.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Tuomisto, F.;Maki, J. -M.;Rauch, C.;Makkonen, I.;
12:113:6 Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar, 10(1)over-bar(1)over-bar GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3337098 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Onuma, T.;Uedono, A.;Asamizu, H.;Sato, H.;Kaeding, J. F.;Iza, M.;DenBaars, S. P.;Nakamura, S.;Chichibu, S. F.;
12:113:7 Self-compensation in highly n-type InN
DOI:10.1063/1.4732508 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Rauch, C.;Tuomisto, F.;King, P. D. C.;Veal, T. D.;Lu, H.;Schaff, W. J.;
12:113:8 Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam
DOI:10.1063/1.3675516 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Uedono, A.;Ishibashi, S.;Tenjinbayashi, K.;Tsutsui, T.;Nakahara, K.;Takamizu, D.;Chichibu, S. F.;
12:113:9 Vacancy-type defects in InxGa1-xN grown on GaN templates probed using monoenergetic positron beams
DOI:10.1063/1.4830033 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Uedono, Akira;Watanabe, Tomohito;Kimura, Shogo;Zhang, Yang;Lozac'h, Mickael;Sang, Liwen;Ishibashi, Shoji;Oshima, Nagayasu;Suzuki, Ryoichi;Sumiya, Masatomo;
12:113:10 Positrons as interface-sensitive probes of polar semiconductor heterostructures
DOI:10.1103/PhysRevB.82.041307 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Makkonen, I.;Snicker, A.;Puska, M. J.;Maki, J. -M.;Tuomisto, F.;
12:113:11 Identification of the V-Al-O-N defect complex in AlN single crystals
DOI:10.1103/PhysRevB.84.081204 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Maki, J-M;Makkonen, I.;Tuomisto, F.;Karjalainen, A.;Suihkonen, S.;Raisanen, J.;Chemekova, T. Yu;Makarov, Yu N.;
12:113:12 Defect evolution and interplay in n-type InN
DOI:10.1063/1.3688038 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Rauch, Christian;Tuomisto, Filip;Vilalta-Clemente, Arantxa;Lacroix, Bertrand;Ruterana, Pierre;Kraeusel, Simon;Hourahine, Ben;Schaff, William J.;
12:113:13 Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams
DOI:10.1063/1.4819798 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Uedono, Akira;Yonenaga, Ichiro;Watanabe, Tomohito;Kimura, Shogo;Oshima, Nagayasu;Suzuki, Ryoichi;Ishibashi, Shoji;Ohno, Yutaka;
12:113:14 Defect redistribution in postirradiation rapid-thermal-annealed InN
DOI:10.1103/PhysRevB.82.153202 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Reurings, Floris;Rauch, Christian;Tuomisto, Filip;Jones, Rebecca E.;Yu, Kin M.;Walukiewicz, Wladek;Schaff, William J.;
12:113:15 In vacancies in InN grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3516467 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Reurings, Floris;Tuomisto, Filip;Gallinat, Chad S.;Koblmueller, Gregor;Speck, James S.;
12:113:16 Origins of optical absorption and emission lines in AlN
DOI:10.1063/1.4895786 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yan, Qimin;Janotti, Anderson;Scheffler, Matthias;Van de Walle, Chris G.;
12:113:17 Defects at nitrogen site in electron-irradiated AlN
DOI:10.1063/1.3600638 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Son, N. T.;Gali, A.;Szabo, A.;Bickermann, M.;Ohshima, T.;Isoya, J.;Janzen, E.;
12:113:18 Highly transparent ammonothermal bulk GaN substrates
DOI:10.1016/j.jcrysgro.2014.06.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:6 AU: Jiang, Wenkan;Ehrentraut, Dirk;Downey, Bradley C.;Kamber, Derrick S.;Pakalapati, Rajeev T.;Do Yoo, Hak;D'Evelyn, Mark P.;
12:114:1 Control and stability of self-assembled monolayers under biosensing conditions
DOI:10.1039/c1jm10132c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:29 AU: Seitz, Oliver;Fernandes, Poornika G.;Tian, Ruhai;Karnik, Nikhil;Wen, Huang-Chun;Stiegler, Harvey;Chapman, Richard A.;Vogel, Eric M.;Chabal, Yves J.;
12:114:2 Efficient Radiative and Nonradiative Energy Transfer from Proximal CdSe/ZnS Nanocrystals into Silicon Nanomembranes
DOI:10.1021/nn301531b JN:ACS NANO PY:2012
TC:18 AU: Nguyen, Hue M.;Seitz, Oliver;Peng, Weina;Gartstein, Yuri N.;Chabal, Yves J.;Malko, Anton V.;
12:114:3 Spectroscopic evidence for nonradiative energy transfer between colloidal CdSe/ZnS nanocrystals and functionalized silicon substrates
DOI:10.1063/1.3579545 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Nguyen, H. M.;Seitz, O.;Aureau, D.;Sra, A.;Nijem, N.;Gartstein, Yu. N.;Chabal, Y. J.;Malko, A. V.;
12:114:4 Optimizing non-radiative energy transfer in hybrid colloidal-nanocrystal/silicon structures by controlled nanopillar architectures for future photovoltaic cells
DOI:10.1063/1.3675634 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Seitz, O.;Caillard, L.;Nguyen, H. M.;Chiles, C.;Chabal, Y. J.;Malko, A. V.;
12:114:5 One-Step Selective Chemistry for Silicon-on-Insulator Sensor Geometries
DOI:10.1021/la200471b JN:LANGMUIR PY:2011
TC:16 AU: Seitz, Oliver;Fernandes, Poornika G.;Mahmud, Gazi A.;Wen, Huang-Chun;Stiegler, Harvey J.;Chapman, Richard A.;Vogel, Eric M.;Chabal, Yves J.;
12:114:6 Role of Solvent-Oxygen Ion Pairs in Photooxidation of CdSe Nanocrystal Quantum Dots
DOI:10.1021/nn2046289 JN:ACS NANO PY:2012
TC:12 AU: Manner, Virginia W.;Koposov, Alexey Y.;Szymanski, Paul;Klimov, Victor I.;Sykora, Milan;
12:114:7 Phonon-Assisted Exciton Transfer into Silicon Using Nanoemitters: The Role of Phonons and Temperature Effects in Forster Resonance Energy Transfer
DOI:10.1021/nn404627p JN:ACS NANO PY:2013
TC:6 AU: Yeltik, Aydan;Guzelturk, Burak;Hernandez-Martinez, Pedro Ludwig;Govorov, Alexander O.;Demir, Hilmi Volkan;
12:114:8 Efficient Directed Energy Transfer through Size-Gradient Nanocrystal Layers into Silicon Substrates
DOI:10.1002/adfm.201400667 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:2 AU: De Benedetti, William J. I.;Nimmo, Michael T.;Rupich, Sara M.;Caillard, Louis M.;Gartstein, Yuri N.;Chabal, Yves J.;Malko, Anton V.;
12:114:9 Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al2O3 protective layer
DOI:10.1063/1.4742168 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Peng, W.;Seitz, O.;Chapman, R. A.;Vogel, E. M.;Chabal, Y. J.;
12:114:10 Visible to Near-Infrared Sensitization of Silicon Substrates via Energy Transfer from Proximal Nanocrystals: Further Insights for Hybrid Photovoltaics
DOI:10.1021/nn400924y JN:ACS NANO PY:2013
TC:10 AU: Nimmo, Michael T.;Caillard, Louis M.;De Benedetti, William;Nguyen, Hue M.;Seitz, Oliver;Gartstein, Yuri N.;Chabal, Yves J.;Malko, Anton V.;
12:114:11 Effect of mobile ions on ultrathin silicon-on-insulator-based sensors
DOI:10.1063/1.3463453 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Fernandes, P. G.;Seitz, O.;Chapman, R. A.;Stiegler, H. J.;Wen, H. -C.;Chabal, Y. J.;Vogel, E. M.;
12:114:12 Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment
DOI:10.1063/1.3669409 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Jang, Hyeri;Lee, Jieun;Lee, Jung Han;Seo, Sungmin;Park, Byung-Gook;Kim, Dong Myong;Kim, Dae Hwan;Chung, In-Young;
12:114:13 Lowering the density of electronic defects on organic-functionalized Si(100) surfaces
DOI:10.1063/1.4883367 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Peng, Weina;DeBenedetti, William J. I.;Kim, Seonjae;Hines, Melissa A.;Chabal, Yves J.;
12:114:14 A new controlled concept of immune-sensing platform for specific detection of Alzheimer's biomarkers
DOI:10.1016/j.bios.2012.07.072 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:10 AU: Ammar, M.;Smadja, C.;Phuong, L. Giang Thi;Azzouz, M.;Vignerond, J.;Etcheberry, A.;Taverna, M.;Dufour-Gergam, E.;
12:114:15 Development of a high-sensitivity immunoassay for amyloid-beta 1-42 using a silicon microarray platform
DOI:10.1016/j.bios.2013.03.077 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:11 AU: Gagni, Paola;Sola, Laura;Cretich, Marina;Chiari, Marcella;
12:114:16 Chemical Engineering of Self-Assembled Alzheimer's Peptide on a Silanized Silicon Surface
DOI:10.1021/la500695y JN:LANGMUIR PY:2014
TC:0 AU: Ammar, Mehdi;Smadja, Claire;Giang Thi Phuong Ly;Tandjigora, Dienaba;Vigneron, Jackie;Etcheberry, Arnaud;Taverna, Myriam;Dufour-Gergam, Elisabeth;
12:114:17 Molecular gated transistors: Role of self-assembled monolayers
DOI:10.1016/j.apsusc.2010.03.099 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Shaya, O.;Halpern, E.;Khamaisi, B.;Shaked, M.;Usherenko, Y.;Shalev, G.;Doron, A.;Levy, I.;Rosenwaks, Y.;
12:114:18 Studies of the photostability of CdSe/CdS dot-in-rod nanoparticles
DOI:10.1007/s11051-012-1278-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:0 AU: Wen, Xiaoming;Sitt, Amit;Yu, Pyng;Ko, Hsien-chen;Toh, Yon-Rui;Tang, Jau;
12:114:19 Gate coupling and carrier distribution in silicon nanowire/nanoribbon transistors operated in electrolyte
DOI:10.1116/1.3528215 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:3 AU: Chen, Si;Zhang, Shi-Li;
12:115:1 Polytypism in ZnS, ZnSe, and ZnTe: First-principles study
DOI:10.1103/PhysRevB.89.245308 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Boutaiba, F.;Belabbes, A.;Ferhat, M.;Bechstedt, F.;
12:115:2 Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
DOI:10.1063/1.3576570 JN:APPLIED PHYSICS LETTERS PY:2011
TC:28 AU: Pela, R. R.;Caetano, C.;Marques, M.;Ferreira, L. G.;Furthmueller, J.;Teles, L. K.;
12:115:3 All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces
DOI:10.1063/1.4812493 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Silva Filho, O. P.;Ribeiro, M., Jr.;Pela, R. R.;Teles, L. K.;Ferreira, L. G.;Marques, M.;
12:115:4 Digital magnetic heterostructures based on GaN using GGA-1/2 approach
DOI:10.1063/1.4751285 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Santos, J. P. T.;Marques, M.;Ferreira, L. G.;Pela, R. R.;Teles, L. K.;
12:115:5 Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors
DOI:10.1063/1.3624562 JN:AIP ADVANCES PY:2011
TC:24 AU: Ferreira, Luiz G.;Marques, Marcelo;Teles, Lara K.;
12:115:6 GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations
DOI:10.1063/1.4718602 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Pela, R. R.;Marques, M.;Ferreira, L. G.;Furthmueller, J.;Teles, L. K.;
12:115:7 Ab initio calculation of the CdSe/CdTe heterojunction band offset using the local-density approximation-1/2 technique with spin-orbit corrections
DOI:10.1063/1.3699054 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Ribeiro, M., Jr.;Fonseca, L. R. C.;Sadowski, T.;Ramprasad, R.;
12:115:8 CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections
DOI:10.1016/j.mseb.2011.12.044 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:8 AU: Ribeiro, M., Jr.;Ferreira, L. G.;Fonseca, L. R. C.;Ramprasad, R.;
12:115:9 Magnetism and clustering in Cr-doped InN
DOI:10.1063/1.3527978 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Belabbes, A.;Zaoui, A.;Ferhat, M.;
12:115:10 Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells
DOI:10.1103/PhysRevB.88.224102 JN:Algarabel, Pedro/K-8583-2014; Ibarra, Manuel Ricardo/K-1150-2014; Rodriguez Fernandez, Jesus/L-7960-2014;Morellon, Luis/0000-0003-3724-508X; Marcano Aguado,;Noelia/0000-0002-5331-9758; PY:100 TC:arabel, Pedro/0000-0002-4698-3378;;Ibarra, Manuel Ricardo/0000-0003-0681-8260;;0;0;0;0;0;1098-0121;WOS:000332161300004;;;J;Minar, Jiri;Gremaud, Benoit;From antiferromagnetic ordering to magnetic textures in the;two-dimensional Fermi-Hubbard model with synthetic spin-orbit;interactions;PHYSICAL REVIEW B;88;23;235130;10.1103/PhysRevB.88.235130;DEC 30 2013;2013;We study the interacting Fermi-Hubbard model in two spatial dimensions;with synthetic gauge coupling of the spin-orbit Rashba type, at;half-filling. Using real-space mean-field theory, we numerically;determine the phase as a function of the interaction strength for;different values of the gauge-field parameter. For a fixed value of the;gauge field, we observe that when the strength of the repulsive;interaction is increased, the system enters into an antiferromagnetic;phase, then undergoes a first-order phase transition to a noncollinear;magnetic phase. Depending on the gauge-field parameter, this phase;further evolves to the one predicted from the effective Heisenberg model;obtained in the limit of large interaction strength. We explain the;presence of the antiferromagnetic phase at small interaction from the;computation of the spin-spin susceptibility, which displays a divergence;at low temperatures for the antiferromagnetic ordering. We discuss, how;the divergence is related to the nature of the underlying Fermi;surfaces. Finally, the fact that the first-order phase transitions for;different gauge-field parameters occur at unrelated critical interaction;strengths arises from a Hofstadter-like situation, i.e., for different;magnetic phases, the mean-field Hamiltonians have different;translational symmetries.;1;0;0;0;1;1098-0121;WOS:000332163500001;;;J;Rochal, S. B.;Lorman, V. L.;Yuzyuk, Yu. I.;Two-dimensional elasticity determines the low-frequency dynamics of;single-and double-walled carbon nanotubes;PHYSICAL REVIEW B;88;23;235435;10.1103/PhysRevB.88.235435;DEC 30 2013;2013;We develop a continuous theory of low-frequency dynamics for nanotubes;with walls constituted by singleatom monolayer, the topological;elasticity of which is not related to its vanishing macroscopic;thickness. The applicability region of the theory proposed includes all;truly two-dimensional materials such as graphene and MoS2. New;comprehensive interpretation and analytical expressions for;low-frequency modes in single-walled carbon nanotube (SWCNT) are given.;The theory unambiguously relates the radial breathing modes of SWCNT and;breathinglike modes of the double-walled carbon nanotube (DWCNT). The;existing Raman data on DWCNTs are fitted better than in the frame of;previous models.;Yuzyuk, Yuri/A-1285-2009;0;0;0;0;0;1098-0121;WOS:000332163500006;;;J;Wagner, Markus R.;Callsen, Gordon;Reparaz, Juan S.;Kirste, Ronny;Hoffmann, Axel;Rodina, Anna V.;Schleife, Andre;Bechstedt, Friedhelm;Phillips, Matthew R.;Effects of strain on the valence band structure and exciton-polariton;energies in ZnO;PHYSICAL REVIEW B;88;23;235210;10.1103/PhysRevB.88.235210;DEC 30 2013;2013;The uniaxial stress dependence of the band structure and the;exciton-polariton transitions in wurtzite ZnO is thoroughly studied;using modern first-principles calculations based on the HSE+ G(0)W(0);approach, k center dot p modeling using the deformation potential;framework, and polarized photoluminescence measurements. The ordering of;the valence bands [A(Gamma(7)), B(Gamma(9)), C(Gamma(7))] is found to be;robust even for high uniaxial and biaxial strains. Theoretical results;for the uniaxial pressure coefficients and splitting rates of the A, B,;and C valence bands and their optical transitions are obtained including;the effects of the spin-orbit interaction. The excitonic deformation;potentials are derived and the stress rates for hydrostatic pressure are;determined based on the results for uniaxial and biaxial stress. In;addition, the theory for the stress dependence of the exchange;interaction and longitudinal-transversal splitting of the exciton;polaritons is developed using the basic exciton functions of the;quasicubic approximation and taking the interaction between all exciton;states into account. It is shown that the consideration of these effects;is crucial for an accurate description of the stress dependence of the;optical spectra in ZnO. The theoretical results are compared to;polarized photoluminescence measurements of different ZnO substrates as;function of uniaxial pressure and experimental values reported in the;literature demonstrating an excellent agreement with the computed;pressure coefficients.;Wagner, Markus/A-3582-2009;Wagner, Markus/0000-0002-7367-5629;3;0;1;0;3;1098-0121;WOS:000332163500004;;;J;Zhang, Jian-Min;Ming, Wenmei;Huang, Zhigao;Liu, Gui-Bin;Kou, Xufeng;Fan, Yabin;Wang, Kang L.;Yao, Yugui;Stability, electronic, and magnetic properties of the magnetically doped;topological insulators Bi2Se3, Bi2Te3, and Sb2Te3;PHYSICAL REVIEW B;88;23;235131;10.1103/PhysRevB.88.235131;DEC 30 2013;2013;Magnetic interaction with the gapless surface states in a topological;insulator (TI) has been predicted to give rise to a few exotic quantum;phenomena. However, the effective magnetic doping of TI is still;challenging in the experiment. Using first-principles calculations, the;magnetic doping properties (V, Cr, Mn, and Fe) in three strong TIs;(Bi2Se3, Bi2Te3, and Sb2Te3) are investigated. We find that for all;three TIs the cation-site substitutional doping is most energetically;favorable with the anion-rich environment as the optimal growth;condition. Further, our results show that under the nominal doping;concentration of 4%, Cr- and Fe-doped Bi2Se3, Bi2Te3, and Cr-doped;Sb2Te3 remain as insulators, while all the V-and Mn-doped TIs, and;Fe-doped Sb2Te3 become metal. We also show that the magnetic interaction;of Cr-doped Bi2Se3 tends to be ferromagnetic, while Fe-doped Bi2Se3 is;likely to be antiferromagnetic. Finally, we estimate the magnetic;coupling and the Curie temperature for the promising ferromagnetic;insulator (Cr-doped Bi2Se3) by Monte Carlo simulation. These findings;may provide important guidance for the magnetism incorporation in TIs;experimentally.;Yao, Yugui/A-8411-2012; Liu, Gui-Bin/A-2724-2009; Zhang, Jian-Min/A-7757-2012;Liu, Gui-Bin/0000-0001-5935-7555;;4;0;0;0;4;1098-0121;WOS:000332163500002;;;J;Zitko, R.;Hansen, D.;Perepelitsky, E.;Mravlje, J.;Georges, A.;Shastry, B. S.;Extremely correlated Fermi liquid theory meets dynamical mean-field;theory: Analytical insights into the doping-driven Mott transition;PHYSICAL REVIEW B;88;23;235132;10.1103/PhysRevB.88.235132;DEC 30 2013;2013;We consider a doped Mott insulator in the large dimensionality limit;within both the recently developed extremely correlated Fermi liquid;(ECFL) theory and the dynamical mean-field theory (DMFT). We show that;the general structure of the ECFL sheds light on the rich frequency;dependence of the DMFT self-energy. Using the leading Fermi liquid form;of the two key auxiliary functions introduced in the ECFL theory, we;obtain an analytical ansatz, which provides a good quantitative;description of the DMFT self-energy down to hole doping level delta;similar or equal to 0.2. In particular, the deviation from Fermi liquid;behavior and the corresponding particle-hole asymmetry developing at a;low-energy scale are well reproduced by this ansatz. The DMFT being;exact at large dimensionality, our study also provides a benchmark of;the ECFL in this limit. We find that the main features of the;self-energy and spectral line shape are well reproduced by the ECFL;calculations in the O(lambda(2)) minimal scheme, for not too low doping;level delta greater than or similar to 0.3. The DMFT calculations;reported here are performed using a state-of-the-art numerical;renormalization-group impurity solver, which yields accurate results;down to an unprecedentedly small doping level delta less than or similar;to 0.001.;1;0;0;0;1;1098-0121;WOS:000332163500003;;;J;Barros, M. S. M.;Nascimento Junior, A. J.;Macedo-Junior, A. F.;Ramos, J. G. G. S.;Barbosa, A. L. R.;Open chaotic Dirac billiards: Weak (anti)localization, conductance;fluctuations, and decoherence;PHYSICAL REVIEW B;88;24;245133;10.1103/PhysRevB.88.245133;DEC 30 2013;2013;In this paper, we investigate the transport properties of open chaotic;Dirac billiards and their intrinsic (chiral universal) symmetry classes.;The prominent examples of these systems are some categories of;topological insulators and graphene structures. We extend the;diagrammatic method of integration over the unitary group and obtain;analytical results for the semiclassical limit and for the high quantum;limit in the universal regime. We show the emergence of quantum;fingerprints characteristic of the chiral symmetries, which are;amplified in the presence of a single open channel in each electronic;terminals. We compare the chaotic Dirac billiards with the "Schrodinger;billiards" in a myriad of regimes, exhibiting the differences between;the chiral universal classes and the Wigner-Dyson classes. Two numerical;methods were used to confirm our analytical findings, yielding also the;distribution of conductances. We also investigate analytically the;effect of dephasing using the characteristic time scales of the chaotic;billiards and we show the appearance of peculiar numbers of chaos.;0;0;0;0;0;1098-0121;WOS:000332164700008;;;J;Cooke, D. G.;Jepsen, P. Uhd;Lek, Jun Yan;Lam, Yeng Ming;Sy, F.;Dignam, M. M.;Picosecond dynamics of internal exciton transitions in CdSe nanorods;PHYSICAL REVIEW B;88;24;241307;10.1103/PhysRevB.88.241307;DEC 30 2013;2013;The picosecond dynamics of excitons in colloidal CdSe nanorods are;directly measured via their 1s to 2p-like internal transitions by;ultrabroadband terahertz spectroscopy. Broadened absorption peaks from;both the longitudinal and transverse states are observed at 8.5 and 11;THz, respectively. The onset of exciton-LO phonon coupling appears as a;bleach in the optical conductivity spectra at the LO phonon energy for;times > 1 ps after excitation. Simulations show a suppressed exciton;temperature due to thermally excited hole states being rapidly captured;onto ligands or unpassivated surface states. The relaxation kinetics are;manipulated and the longitudinal transition is quenched by surface;ligand exchange with hole capturing pyridine.;Lam, Yeng Ming/A-2230-2011;Lam, Yeng Ming/0000-0001-9390-8074;1;0;0;0;1;1098-0121;WOS:000332164700002;;;J;Cote, R.;Barrette, Manuel;Validity of the two-component model of bilayer and trilayer graphene in;a magnetic field;PHYSICAL REVIEW B;88;24;245445;10.1103/PhysRevB.88.245445;DEC 30 2013;2013;The eigenstates of an electron in the chiral two-dimensional electron;gas (C2DEG) formed in an AB-stacked bilayer or an ABC-stacked trilayer;graphene is a spinor with four or six components, respectively. These;components give the amplitude of the wave function on the four or six;carbon sites in the unit cell of the lattice. In the tight-binding;approximation, the eigenenergies are thus found by diagonalizing a 4 x 4;or a 6 x 6 matrix. In the continuum approximation where the electron;wave vector k << 1/a(0), with a(0) the lattice constant of the graphene;sheets, a common approximation is the two-component (or "two-band");model(1) where the eigenstates for the bilayer and trilayer systems are;described by a two-component spinor that gives the amplitude of the wave;function on the two sites with low energy vertical bar E vertical bar <<;gamma(1) where gamma(1) is the hopping energy between sites that are;directly above one another in adjacent layers. The two-component model;has been used extensively to study the phase diagram of the C2DEG in a;magnetic field as well as its transport and optical properties. In this;paper, we use a numerical approach to compute the eigenstates and Landau;level energies of the full tight-binding model in the continuum;approximation and compare them with the prediction of the two-component;model when the magnetic field or an electrical bias between the;outermost layers is varied. Our numerical analysis shows that the;two-component model is a good approximation for bilayer graphene in a;wide range of magnetic field and bias but mostly for Landau level M = 0.;The applicability of the two-component model in trilayer graphene, even;for level M = 0, is much more restricted. In this case, the;two-component model fails to reproduce some of the level crossings that;occur between the sublevels of M = 0.;3;0;0;0;3;1098-0121;WOS:000332164700013;;;J;Gammelmark, Soren;Zinner, Nikolaj Thomas;Dipoles on a two-leg ladder;PHYSICAL REVIEW B;88;24;245135;10.1103/PhysRevB.88.245135;DEC 30 2013;2013;We study polar molecules with long-range dipole-dipole interactions;confined to move on a two-leg ladder for different orientations of the;molecular dipole moments with respect to the ladder. Matrix product;states are employed to calculate the many-body ground state of the;system as a function of lattice filling fractions, perpendicular hopping;between the legs, and dipole interaction strength. We show that the;system exhibits zigzag ordering when the dipolar interactions are;predominantly repulsive. As a function of dipole moment orientation with;respect to the ladder, we find that there is a critical angle at which;ordering disappears. This angle is slightly larger than the angle at;which the dipoles are noninteracting along a single leg. This behavior;should be observable using current experimental techniques.;2;0;0;0;2;1098-0121;WOS:000332164700010;;;J;Hofer, Patrick P.;Buettiker, Markus;Emission of time-bin entangled particles into helical edge states;PHYSICAL REVIEW B;88;24;241308;10.1103/PhysRevB.88.241308;DEC 30 2013;2013;We propose a single-particle source which emits into the helical edge;states of a two-dimensional quantum spin Hall insulator. Without;breaking time-reversal symmetry, this source acts like a pair of;noiseless single-electron emitters which each inject separately into a;chiral edge state. By locally breaking time-reversal symmetry, the;source becomes a proper single-particle emitter which exhibits shot;noise. Due to its intrinsic helicity, this system can be used to produce;time-bin entangled pairs of electrons in a controlled manner. The noise;created by the source contains information on the emitted wave packets;and is proportional to the concurrence of the emitted state.;Hofer, Patrick/O-1062-2013;Hofer, Patrick/0000-0001-6036-7291;7;0;0;0;7;1098-0121;WOS:000332164700003;;;J;Leon, C.;Latge, A.;Half-metallicity study of graphene nanoribbon bilayers under external;fields;PHYSICAL REVIEW B;88;24;245446;10.1103/PhysRevB.88.245446;DEC 30 2013;2013;Here we discuss the possibility of modulating energy gaps of graphene;nanoribbon bilayers, with zigzag edges, by applying electric fields. The;system is disposed in the Bernal configuration and is described by a;Hubbard Hamiltonian. We follow a Hartree-Fock mean-field theory to;calculate the electronic properties of the system. Under the action of a;transversal electric field, half-metallicity is found: One of the spin;bands increases the gap energy as the intensity of the field is;increased whereas the other decreases until achieving a null gap. For a;particular electric field range, the system exhibits metallic and;semiconducting features depending on the spin band. Half-metallicity is;enhanced due to an extra effect for the bilayer system: The presence of;a robust plateau-like in the gap versus field intensity diagram, for an;intermediate energy gap value of the semiconducting band. The;correlation of the gap plateau with local magnetizations and charge;numbers in the two layers is investigated. Further applied gate voltages;on the ribbons are considered to investigate the possibilities of;getting new physical responses for tilted electric field configurations.;Possible spintronic applications can be driven based on the differential;spin-band features achieved.;1;0;0;0;1;1098-0121;WOS:000332164700014;;;J;Lundgren, Rex;Fuji, Yohei;Furukawa, Shunsuke;Oshikawa, Masaki;Entanglement spectra between coupled Tomonaga-Luttinger liquids:;Applications to ladder systems and topological phases;PHYSICAL REVIEW B;88;24;245137;10.1103/PhysRevB.88.245137;DEC 30 2013;2013;We study the entanglement spectrum (ES) and entropy between two coupled;Tomonaga-Luttinger liquids (TLLs) on parallel periodic chains. This;problem gives access to the entanglement properties of various;interesting systems, such as spin ladders as well as two-dimensional;topological phases. By expanding interchain interactions to quadratic;order in bosonic fields, we are able to calculate the ES for both gapped;and gapless systems using only methods for free theories. In certain;gapless phases of coupled nonchiral TLLs, we interestingly find an ES;with a dispersion relation proportional to the square root of the;subsystem momentum, which we relate to a long-range interaction in the;entanglement Hamiltonian. We numerically demonstrate the emergence of;this unusual dispersion in a model of hard-core bosons on a ladder. In;gapped phases of coupled nonchiral TLLs, which are relevant to spin;ladders and topological insulators, we show that the ES consists of;linearly dispersing modes, which resembles the spectrum of a;single-chain TLL but is characterized by a modified TLL parameter. Based;on a calculation for coupled chiral TLLs, we are also able to provide a;very simple proof for the correspondence between the ES and the;edge-state spectrum in quantum Hall systems consistent with previous;numerical and analytical studies.;Oshikawa, Masaki/F-4992-2011; Furukawa, Shunsuke/E-4416-2013;Oshikawa, Masaki/0000-0002-7637-7432;;6;0;0;0;6;1098-0121;WOS:000332164700012;;;J;Moon, Pilkyung;Koshino, Mikito;Optical properties of the Hofstadter butterfly in the moire superlattice;PHYSICAL REVIEW B;88;24;241412;10.1103/PhysRevB.88.241412;DEC 30 2013;2013;We investigate the optical absorption spectrum and the selection rule;for the Hofstadter butterfly in twisted bilayer graphene under magnetic;fields. We demonstrate that the absorption spectrum exhibits a;self-similar recursive pattern reflecting the fractal nature of the;energy spectrum. We find that the optical selection rule has a nested;self-similar structure as well, and it is governed by the conservation;of the total angular momentum summed over different hierarchies.;Moon, Pilkyung/A-2930-2010;Moon, Pilkyung/0000-0003-3994-4255;2;0;0;0;2;1098-0121;WOS:000332164700005;;;J;Poirier, Mario;de Lafontaine, Mathieu;Bourbonnais, Claude;Pouget, Jean-Paul;Charge, spin, and lattice effects in the spin-Peierls ground state of;MEM(TCNQ)(2);PHYSICAL REVIEW B;88;24;UNSP 245134;10.1103/PhysRevB.88.245134;DEC 30 2013;2013;We report an investigation of charge, spin, and lattice effects in the;spin-Peierls state of the organic compound MEM(TCNQ)(2). The 16.5-GHz;dielectric function along the chain axis shows an enhancement below the;spin-Peierls transition temperature near 18 K consistent with the charge;coupling to the elastic strain involved in the transition. The velocity;of two elastic modes perpendicular to the chain axis presents anomalies;at the transition, which can be explained with a Landau free-energy;model including a linear-quadratic coupling energy term between the;appropriate elastic strain e and the spin-Peierls magnetic gap Delta(q).;The analysis of the dielectric and elastic features aims toward an order;parameter with an associated critical exponent beta similar to 0.36,;which is similar to the three-dimensional behavior seen in other;spin-Peierls materials. All these effects studied in a magnetic field up;to 18 Teslas appear also compatible with a mean-field model of a;quasi-one-dimensional spin-Peierls system.;0;0;0;0;0;1098-0121;WOS:000332164700009;;;J;Syzranov, S. V.;Rodionov, Ya. I.;Kugel, K. I.;Nori, F.;Strongly anisotropic Dirac quasiparticles in irradiated graphene;PHYSICAL REVIEW B;88;24;241112;10.1103/PhysRevB.88.241112;DEC 30 2013;2013;We study quasiparticle dynamics in graphene exposed to a linearly;polarized electromagnetic wave of very large intensity. We demonstrate;that low-energy transport in such system can be described by an;effective time-independent Hamiltonian, characterized by multiple Dirac;points in the first Brillouin zone. Around each Dirac point the spectrum;is anisotropic: the velocity along the polarization of the radiation;significantly exceeds the velocity in the perpendicular direction.;Moreover, in some of the points the transverse velocity oscillates as a;function of the radiation intensity. We find that the conductance of a;graphene p-n junction in the regime of strong irradiation depends on the;polarization as G(theta) proportional to vertical bar sin theta vertical;bar(3/2), where theta is the angle between the polarization and the p-n;interface, and oscillates as a function of the radiation intensity.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332164700001;;;J;Toke, Csaba;Particle-hole symmetry and bifurcating ground-state manifold in the;quantum Hall ferromagnetic states of multilayer graphene;PHYSICAL REVIEW B;88;24;241411;10.1103/PhysRevB.88.241411;DEC 30 2013;2013;The orbital structure of the quantum Hall ferromagnetic states in the;zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA,;etc. stackings) is determined by the exchange interaction with all;levels, including deep-lying states in the Dirac sea. This exchange;field favors orbitally coherent states with a U(1) orbital symmetry if;the filling factor nu is not a multiple of the number of layers. If;electrons fill the orbital sector of a fixed spin/valley component to;one-half, e.g., at nu = +/- 3, +/- 1 in the bilayer and at nu = +/- 2,;+/- 6 in the ABCA four-layer, there is a transition to a Z(2) x U(1);manifold. For weak interaction, the structure in the zero-energy Landau;band compensates for the different exchange interaction on the;sublattices in the Landau orbitals; on the other side, the ground state;comes in two copies that distribute charge on the sublattices;differently. We expect a sequence of similar bifurcations in multilayers;of Bernal stacking.;1;1;0;0;1;1098-0121;WOS:000332164700004;;;J;Tonegawa, S.;Hashimoto, K.;Ikada, K.;Tsuruhara, Y.;Lin, Y. -H.;Shishido, H.;Haga, Y.;Matsuda, T. D.;Yamamoto, E.;Onuki, Y.;Ikeda, H.;Matsuda, Y.;Shibauchi, T.;Cyclotron resonance study of quasiparticle mass and scattering rate in;the hidden-order and superconducting phases of URu2Si2;PHYSICAL REVIEW B;88;24;245131;10.1103/PhysRevB.88.245131;DEC 30 2013;2013;The observation of cyclotron resonance in ultraclean crystals of URu2Si2;[S. Tonegawa et al., Phys. Rev. Lett. 109, 036401 (2012)] provides;another route besides quantum oscillations to the determination of the;bulk electronic structure in the hidden-order phase. We report detailed;analyses of the resonance lines, which fully resolve the cyclotron mass;structure of the main Fermi surface sheets. A particular focus is given;to the anomalous splitting of the sharpest resonance line near the [110];direction under in-plane magnetic-field rotation, which implies peculiar;electronic structure in the hidden-order phase. The results under the;field rotation from [110] toward [001] direction reveal that the;splitting is a robust feature against field tilting from the basal;plane. This is in sharp contrast to the reported frequency branch alpha;in the quantum oscillation experiments showing a three-fold splitting;that disappears by a small field tilt, which can be explained by the;magnetic breakdown between the large hole sphere and small electron;pockets. Our analysis of the cyclotron resonance profiles reveals that;the heavier branch of the split line has a larger scattering rate,;providing evidence for the existence of hot-spot regions along the [110];direction. These results are consistent with the broken fourfold;rotational symmetry in the hidden-order phase, which can modify the;interband scattering in an asymmetric manner. We also extend our;measurements down to 0.7 K, which results in the observation of;cyclotron resonance in the superconducting state, where novel effects of;vortex dynamics may enter. We find that the cyclotron mass undergoes no;change in the superconducting state. In contrast, the quasiparticle;scattering rate shows a rapid decrease below the vortex-lattice melting;transition temperature, which supports the formation of quasiparticle;Bloch state in the vortex lattice phase.;Hashimoto, Kenichiro/C-4925-2012; Shibauchi, Takasada/B-9349-2008;Shibauchi, Takasada/0000-0001-5831-4924;2;1;0;0;2;1098-0121;WOS:000332164700006;;;J;Wang, Chenjie;Levin, Michael;Weak symmetry breaking in two-dimensional topological insulators;PHYSICAL REVIEW B;88;24;245136;10.1103/PhysRevB.88.245136;DEC 30 2013;2013;We show that there exist two-dimensional (2D) time-reversal invariant;fractionalized insulators with the property that both their boundary;with the vacuum and their boundary with a topological insulator can be;fully gapped without breaking time-reversal or charge conservation;symmetry. This result leads us to an apparent paradox: we consider a;geometry in which a disklike region made up of a topological insulator;is surrounded by an annular strip of a fractionalized insulator, which;is, in turn, surrounded by the vacuum. If we gap both boundaries of the;strip, we naively obtain an example of a gapped interface between a;topological insulator and the vacuum that does not break any;symmetries-an impossibility. The resolution of this paradox is that this;system spontaneously breaks time-reversal symmetry in an unusual way,;which we call weak symmetry breaking. In particular, we find that the;only order parameters that are sensitive to the symmetry breaking are;nonlocal operators that describe quasiparticle tunneling processes;between the two edges of the strip; expectation values of local order;parameters vanish exponentially in the limit of a wide strip. Also, we;find that the symmetry breaking in our system comes with a ground-state;degeneracy, but this ground-state degeneracy is topologically protected,;rather than symmetry protected. We show that this kind of symmetry;breaking can also occur at the edge of 2D fractional topological;insulators.;Wang, Chenjie/G-8652-2013;2;0;0;0;2;1098-0121;WOS:000332164700011;;;J;Zhang, Qingyun;Cheng, Yingchun;Gan, Li-Yong;Schwingenschloegl, Udo;Giant valley drifts in uniaxially strained monolayer MoS2;PHYSICAL REVIEW B;88;24;245447;10.1103/PhysRevB.88.245447;DEC 30 2013;2013;Using first-principles calculations, we study the electronic structure;of monolayer MoS2 under uniaxial strain. We show that the energy valleys;drift far off the corners of the Brillouin zone (K points), about 12;times the amount observed in graphene. Therefore, it is essential to;take this effect into consideration for a correct identification of the;band gap. The system remains a direct band gap semiconductor up to 4%;uniaxial strain, while the size of the band gap decreases from 1.73 to;1.54 eV. We also demonstrate that the splitting of the valence bands due;to inversion symmetry breaking and spin-orbit coupling is not sensitive;to strain.;Cheng, Yingchun/C-8895-2011; Gan, Liyong/D-8113-2013;3;0;0;0;3;1098-0121;WOS:000332164700015;;;J;Zhang, Wentao;Smallwood, Christopher L.;Jozwiak, Chris;Miller, Tristan L.;Yoshida, Yoshiyuki;Eisaki, Hiroshi;Lee, Dung-Hai;Lanzara, Alessandra;Signatures of superconductivity and pseudogap formation in;nonequilibrium nodal quasiparticles revealed by ultrafast angle-resolved;photoemission;PHYSICAL REVIEW B;88;24;245132;10.1103/PhysRevB.88.245132;DEC 30 2013;2013;We use time- and angle-resolved photoemission to measure the nodal;nonequilibrium electronic states in various dopings of;Bi2Sr2CaCu2O8+delta. We find that the initial pump-induced transient;signal of these ungapped states is strongly affected by the onset of the;superconducting gap at T-c, superconducting pairing fluctuations at T-p,;and the pseudogap at T*. Moreover, T-p marks a suggestive threshold in;the fluence-dependent transient signal, with the appearance of a;critical fluence below T-p that corresponds to the energy required to;break apart all Cooper pairs. These results challenge the notion of a;nodal-antinodal dichotomy in cuprate superconductors by establishing a;link between nodal quasiparticles and the cuprate phase diagram.;ZHANG, Wentao/B-3626-2011;4;1;0;0;4;1098-0121;WOS:000332164700007;;;J;Svintsov, D.;Vyurkov, V.;Ryzhii, V.;Otsuji, T.;Hydrodynamic electron transport and nonlinear waves in graphene;PHYSICAL REVIEW B;88;24;245444;10.1103/PhysRevB.88.245444;DEC 27 2013;2013;We derive the system of hydrodynamic equations governing the collective;motion of massless fermions in graphene. The obtained equations;demonstrate the lack of Galilean and Lorentz invariance and contain a;variety of nonlinear terms due to the quasirelativistic nature of;carriers. Using these equations, we show the possibility of soliton;formation in an electron plasma of gated graphene. The quasirelativistic;effects set an upper limit for soliton amplitude, which marks graphene;out of conventional semiconductors. The mentioned noninvariance of the;equations is revealed in spectra of plasma waves in the presence of;steady flow, which no longer obey the Doppler shift. The feasibility of;plasma-wave excitation by direct current in graphene channels is also;discussed.;Svintsov, Dmitry/I-1755-2014;0;0;0;0;0;1098-0121;WOS:000332160400002;;;J;Yan, Jun;Norskov, Jens K.;Calculated formation and reaction energies of 3d transition metal oxides;using a hierachy of exchange-correlation functionals;PHYSICAL REVIEW B;88;24;245204;10.1103/PhysRevB.88.245204;DEC 27 2013;2013;The formation and oxidation reaction energies of 16 transition metal;oxides (TMOs) are benchmarked against experiments with an increasing;complexity of the exchange-correlation (xc) functionals: PBE, PBE + U;with a single U for each transition metal element, PBE0 (25% exact;exchange included), EXX (100% exact exchange), and EXX + RPA (random;phase approximation for the correlation energy). Although rather;challenging on standard CPU computing facilities, the RPA calculations;were performed efficiently on graphic processing units (GPUs). For the;formation energies, the PBE + U, PBE0, EXX + RPA improves significantly;over PBE with mean absolute errors (MAE) of 0.83 (PBE), 0.39 (PBE + U),;0.34 (PBE0), and 0.39 (EXX + RPA) eV per oxygen. In addition, EXX+ RPA;improves over the other xc functionals on the oxidation reaction;energies, with MAE of 0.27 (PBE), 0.28 (PBE + U), 0.30 (PBE0), to 0.13;(EXX + RPA) eV per oxygen. The distinct trend observed for the;calculated oxidation reaction energies compared to the formation;energies is due to that the errors in formation energies for PBE and;EXX+ RPA are systematic; while for PBE + U and PBE0 the deviations have;both signs, so that the error cancellations between different valence;states work better for PBE and EXX + RPA. Finally, we compared the;performance of the EXX + RPA for total energies and G(0)W(0), which uses;the random phase approximation in constructing the W kernel, for band;gaps, and discuss a few challenges for the EXX + RPA method on TMOs.;0;0;0;0;0;1098-0121;WOS:000332160400001;;;J;Bahamon, D. A.;Neto, A. H. Castro;Pereira, Vitor M.;Effective contact model for geometry-independent conductance;calculations in graphene;PHYSICAL REVIEW B;88;23;235433;10.1103/PhysRevB.88.235433;DEC 27 2013;2013;A geometry-independent effective model for the contact self-energies is;proposed to calculate the quantum conductance of patterned graphene;devices using Green's functions. A Corbino disk, being the simplest;device where the contacts cannot be modeled as semi-infinite ribbons, is;chosen to illustrate this approach. This system's symmetry allows an;analytical solution against which numerical calculations on the lattice;can be benchmarked. The effective model perfectly describes the;conductance of Corbino disks at low-to-moderate energies, and is robust;against the size of the annular device region, the number of atoms on;the edge, external magnetic fields, or electronic disorder. The contact;model considered here affords an expedient, flexible, and;geometry-agnostic approach that easily allows the consideration of;device dimensions encompassing several million atoms, and realistic;radial dimensions of a few hundreds of nanometers.;Bahamon, Dario/G-1369-2012; Pereira, Vitor/D-4088-2009; Castro Neto, Antonio/C-8363-2014;Bahamon, Dario/0000-0003-3852-2085; Castro Neto,;Antonio/0000-0003-0613-4010;0;0;0;0;0;1098-0121;WOS:000332159200003;;;J;Hermann, Andreas;Ashcroft, N. W.;Hoffmann, Roald;Isotopic differentiation and sublattice melting in dense dynamic ice;PHYSICAL REVIEW B;88;21;214113;10.1103/PhysRevB.88.214113;DEC 27 2013;2013;The isotopes of hydrogen provide a unique exploratory laboratory for;examining the role of zero point energy (ZPE) in determining the;structural and dynamic features of the crystalline ices of water. There;are two critical regions of high pressure: (i) near 1 TPa and (ii) near;the predicted onset of metallization at around 5 TPa. At the lower;pressure of the two, we see the expected small isotopic effects on phase;transitions. Near metallization, however, the effects are much greater,;leading to a situation where tritiated ice could skip almost entirely a;phase available to the other isotopomers. For the higher pressure ices,;we investigate in some detail the enthalpics of a dynamic proton;sublattice, with the corresponding structures being quite ionic. The;resistance toward diffusion of single protons in the ground state;structures of high-pressure H2O is found to be large, in fact to the;point that the ZPE reservoir cannot overcome these. However, the;barriers toward a three-dimensional coherent or concerted motion of;protons can be much lower, and the ensuing consequences are explored.;Hermann, Andreas/E-8687-2010;Hermann, Andreas/0000-0002-8971-3933;1;0;0;0;1;1098-0121;WOS:000332157500001;;;J;Higashi, Yoichi;Nagai, Yuki;Machida, Masahiko;Hayashi, Nobuhiko;Field-angle resolved flux-flow resistivity as a phase-sensitive probe of;unconventional Cooper pairing;PHYSICAL REVIEW B;88;22;224511;10.1103/PhysRevB.88.224511;DEC 27 2013;2013;We theoretically investigate the applied magnetic field-angle dependence;of the flux-flow resistivity rho(f)(alpha(M)) for a uniaxially;anisotropic Fermi surface. rho(f) is related to the quasiparticle;scattering rate inside a vortex core, which reflects the sign change in;the superconducting pair potential. We find that rho(f)(alpha(M)) is;sensitive to the sign change in the pair potential and has its maximum;when the magnetic field is parallel to the gap-node direction. We;propose the measurement of the field-angle dependent oscillation of;rho(f)(alpha(M)) as a phase-sensitive field-angle resolved experiment.;Nagai, Yuki/B-6698-2011;Nagai, Yuki/0000-0001-5098-5440;0;0;0;0;0;1098-0121;WOS:000332158300001;;;J;Karakonstantakis, G.;Liu, L.;Thomale, R.;Kivelson, S. A.;Correlations and renormalization of the electron-phonon coupling in the;honeycomb Hubbard ladder and superconductivity in polyacene;PHYSICAL REVIEW B;88;22;224512;10.1103/PhysRevB.88.224512;DEC 27 2013;2013;We have performed extensive density matrix renormalization group (DMRG);studies of the Hubbard model on a honeycomb ladder. The band structure;(with Hubbard U = 0) exhibits an unusual quadratic band touching at;half-filling, which is associated with a quantum Lifshitz transition;from a band insulator to a metal. For one electron per site, nonzero U;drives the system into an insulating state in which there is no;pair-binding between added electrons; this implies that;superconductivity driven directly by the repulsive electron-electron;interactions is unlikely in the regime of small doping, x << 1. However,;the divergent density of states as x -> 0, the large values of the;phonon frequencies, and an unusual correlation induced enhancement of;the electron-phonon coupling imply that lightly doped polyacenes, which;approximately realize this structure, are good candidates for;high-temperature electron-phonon driven superconductivity.;1;1;0;0;1;1098-0121;WOS:000332158300002;;;J;Koerbel, Sabine;Elsaesser, Christian;Alignment of ferroelectric polarization and defect complexes in;copper-doped potassium niobate;PHYSICAL REVIEW B;88;21;214114;10.1103/PhysRevB.88.214114;DEC 27 2013;2013;Defect complexes consisting of Cu substitutionals on Nb sites and oxygen;vacancies in potassium niobate, KNbO3, are investigated with respect to;their contribution to ferroelectric hardening by means of;density-functional theory and classical atomistic simulations. We;determine the easy and hard directions for the ferroelectric;polarization created by these defect complexes, the energy differences;between easy and hard directions, and upper limits for the energy;barriers for switching the ferroelectric polarization between these;directions. The ferroelectric polarization preferentially aligns with;the defect complexes, which is expected to impede polarization switching;and hence to contribute to ferroelectric hardening.;1;0;0;0;1;1098-0121;WOS:000332157500002;;;J;Steger, Mark;Liu, Gangqiang;Nelsen, Bryan;Gautham, Chitra;Snoke, David W.;Balili, Ryan;Pfeiffer, Loren;West, Ken;Long-range ballistic motion and coherent flow of long-lifetime;polaritons;PHYSICAL REVIEW B;88;23;235314;10.1103/PhysRevB.88.235314;DEC 27 2013;2013;Exciton polaritons can be created in semiconductor microcavities. These;quasiparticles act as weakly interacting bosons with very light mass, of;the order of 10(-4) times the vacuum electron mass. Many experiments;have shown effects which can be viewed as due to a Bose-Einstein;condensate, or quasicondensate, of these particles. The lifetime of the;particles in most of those experiments has been of the order of a few;picoseconds, leading to significant nonequilibrium effects. By;increasing the cavity quality, we have made samples with longer;polariton lifetimes. With a photon lifetime on the order of 100-200 ps,;polaritons in these structures can not only come closer to reaching true;thermal equilibrium, a desired feature for many researchers working in;this field, but they can also travel much longer distances. We observe;the polaritons to ballistically travel on the order of 1 mm, and at;higher densities we see transport of a coherent condensate, or;quasicondensate, over comparable distances. In this paper we report a;quantitative analysis of the flow of the polaritons both in a low-;density, classical regime, and in the coherent regime at higher density.;Our analysis gives us a measure of the intrinsic lifetime for photon;decay from the microcavity and a measure of the strength of interactions;of the polaritons.;0;0;0;0;0;1098-0121;WOS:000332159200002;;;J;Sun, Dan;Wu, W.;Grigera, S. A.;Perry, R. S.;Mackenzie, A. P.;Julian, S. R.;Pressure study of nematicity and quantum criticality in Sr3Ru2O7 for an;in- plane field;PHYSICAL REVIEW B;88;23;235129;10.1103/PhysRevB.88.235129;DEC 27 2013;2013;We study the relationship between the nematic phases of Sr3Ru2O7 and;quantum criticality. At ambient pressure, one nematic phase is;associated with a metamagnetic quantum critical end point (QCEP) when;the applied magnetic field is near the c axis. We show, however, that;this metamagnetic transition does not produce the same nematic;signatures when the QCEP is reached by hydrostatic pressure with the;field applied in the ab plane. Moreover, a second nematic phase, that is;seen for field applied in the ab plane close to, but not right at, a;second metamagnetic anomaly, persists with minimal change to the highest;applied pressure, 16.55 kbar. Taken together our results suggest that;metamagnetic quantum criticality may not be necessary for the formation;of a nematic phase in Sr3Ru2O7.;0;0;0;0;0;1098-0121;WOS:000332159200001;;;J;Wierzbicki, M.;Swirkowicz, R.;Barnas, J.;Giant spin thermoelectric efficiency in ferromagnetic graphene;nanoribbons with antidots;PHYSICAL REVIEW B;88;23;235434;10.1103/PhysRevB.88.235434;DEC 27 2013;2013;Thermoelectric effects in zigzag graphene nanoribbons with parallel;alignment of the edge spin polarizations are investigated theoretically.;Spin and charge thermopower, electrical and heat conductance, and charge;and spin thermoelectric efficiency are calculated numerically for;pristine nanoribbons as well as for nanoribbons with periodic;one-dimensional lattice of structural defects in the form of antidots.;It is shown that structural defects reduce thermal conductance due to;phonons and open gaps in the corresponding electronic spectrum. This, in;turn, leads to a significant enhancement of the Seebeck and spin Seebeck;coefficients as well as of the thermoelectric efficiency. A giant;enhancement appears in certain regions of chemical potential (controlled;by doping or external gate) and survives at room temperatures.;1;0;0;0;1;1098-0121;WOS:000332159200004;;;J;Apalkov, Vadym;Stockman, Mark I.;Metal nanofilm in strong ultrafast optical fields;PHYSICAL REVIEW B;88;24;245438;10.1103/PhysRevB.88.245438;DEC 26 2013;2013;We predict that a metal nanofilm subjected to an ultrashort (near-single;oscillation) optical pulse of a high field amplitude greater than or;similar to 3 V/A at normal incidence undergoes an ultrafast (at subcycle;times less than or similar to 1 fs) transition to a state resembling;semimetal. Its reflectivity is greatly reduced, while its transmissivity;and the optical field inside the metal are greatly increased. Despite;the metal being a centrosymmetric medium, the strong pulse causes net;charge transfer in the direction determined by the carrier envelope;phase (CEP) of the pulse, which is opposite to the direction of the;maximum field.;2;0;0;0;2;1098-0121;WOS:000331756500005;;;J;Brems, Steven;Liu, Haoliang;Temst, Kristiaan;Van Haesendonck, Chris;Rotation sense of the magnetization in the Co/CoO exchange-bias system;probed with anisotropic magnetoresistance measurements;PHYSICAL REVIEW B;88;21;214427;10.1103/PhysRevB.88.214427;DEC 26 2013;2013;The possibility of tracking the average rotation sense of the;magnetization vector of a ferromagnetic layer upon magnetization;reversal by means of magnetotransport measurements is explored. It is;demonstrated that the rotation sense of the ferromagnetic magnetization;vector during a hysteresis loop can be determined for the;polycrystalline Co/CoO exchange bias system by measuring the anisotropic;magnetoresistance (AMR) with a specific choice of the measurement;geometry. The AMR measurements reveal that the rotation direction of the;magnetization vector can be reversed by performing an in-plane;hysteresis loop with a magnetic field perpendicular to the cooling;field. This reversal can be directly linked to the experimental fact;that after training, i.e., after performing hysteresis loops with a;field along the cooling field direction, the average orientation of the;uncompensated magnetization of the granular CoO antiferromagnet can be;largely rotated back to the initial orientation after field cooling by;applying a perpendicular field with the appropriate amplitude and;orientation.;1;0;0;0;1;1098-0121;WOS:000331751200005;;;J;Cuadra, J.;Sarkar, D.;Vina, L.;Hvam, J. M.;Nalitov, A.;Solnyshkov, D.;Malpuech, G.;Polarized emission in polariton condensates: Switching in a;one-dimensional natural trap versus inversion in two dimensions;PHYSICAL REVIEW B;88;23;235312;10.1103/PhysRevB.88.235312;DEC 26 2013;2013;We perform polarization resolved spectroscopy of two-and one-dimensional;microcavity-polariton condensates, which are formed by exciting the;system in the optical parametric oscillator configuration. We observe;polarization inversion for linearly polarized pumping parallel to the;wire in both the 1D and 2D systems. As the polarization plane of the;pump is rotated, the degree of linear polarization of the 2D system;oscillates between orthogonal polarizations with the same period as that;of the pump. However, the 1D system switches abruptly between two states;of high degree of linear polarization with half the period. Two;complementary models, based on semiclassical Boltzmann kinetic equations;and the Gross-Pitaevskii equation, respectively, obtain an excellent;agreement with the experimental results, providing a deep insight into;the mechanisms responsible for the polarization switching.;Vina, Luis/E-9415-2012;Vina, Luis/0000-0002-6376-6703;0;0;0;0;0;1098-0121;WOS:000331754500006;;;J;Das, Subrat Kumar;Singh, Viveka Nand;Majumdar, Pinaki;Magnon spectrum in the domain ferromagnetic state of antisite-disordered;double perovskites;PHYSICAL REVIEW B;88;21;214428;10.1103/PhysRevB.88.214428;DEC 26 2013;2013;In their ideal structure, double perovskites such as Sr2FeMoO6 have;alternating Fe and Mo along each cubic axis, and a homogeneous;ferromagnetic metallic ground state. Imperfect annealing leads to the;formation of structural domains. The moments on mislocated Fe atoms that;adjoin each other across the domain boundary have an antiferromagnetic;coupling between them. This leads to a peculiar magnetic state, with;ferromagnetic domains coupled antiferromagnetically. At a short distance;the system exhibits ferromagnetic correlation while at large length;scales the net moment is strongly suppressed due to interdomain;cancellation. We provide a detailed description of the spin-wave;excitations of this complex magnetic state, obtained within a 1/S;expansion, for a progressively higher degree of mislocation, i.e.,;antisite disorder. At a given wave vector the magnons propagate at;multiple energies, related, crudely, to "domain confined" modes with;which they have a large overlap. We provide a qualitative understanding;of the trend observed with growing antisite disorder, and contrast these;results to the much broader spectrum that one obtains for uncorrelated;antisites.;0;0;0;0;0;1098-0121;WOS:000331751200006;;;J;Dugaev, V. K.;Katsnelson, M. I.;Edge scattering of electrons in graphene: Boltzmann equation approach to;the transport in graphene nanoribbons and nanodisks;PHYSICAL REVIEW B;88;23;235432;10.1103/PhysRevB.88.235432;DEC 26 2013;2013;We discuss the contribution of edge scattering to the conductance of;graphene nanoribbons and nanoflakes. Using different possible types of;the boundary conditions for the electron wave function at the edge, we;found dependences of the momentum relaxation time and conductance on the;geometric sizes and on the carrier density. We also consider the case of;ballistic nanoribbon and nanodisk, for which the edge scattering is the;main mechanism of momentum relaxation.;3;0;0;0;3;1098-0121;WOS:000331754500008;;;J;Fossati, Paul C. M.;Van Brutzel, Laurent;Chartier, Alain;Crocombette, Jean-Paul;Simulation of uranium dioxide polymorphs and their phase transitions;PHYSICAL REVIEW B;88;21;214112;10.1103/PhysRevB.88.214112;DEC 26 2013;2013;In this article first-principles DFT calculations and molecular dynamics;simulations using empirical potentials have been used to study four;different polymorphs of uranium dioxide that appear under high;compressive and tensile deformations. It has been found, as expected,;that the ground-state structure is the fluorite-type structure (space;group Fm (3) over barm). Under high compressive deformation urania;transforms into cotunnite-type structure (space group Pnma), as already;known experimentally. The calculated transition pressure is 28 GPa in;agreement with the experimental data. Under tensile deformation urania;transforms into either scrutinyite-type structure (space group Pbcn) or;rutile-type (space group P4(2)/mnm) structure. These two phases are;almost energetically degenerate; hence it is impossible to distinguish;which phase is the most favorable. The transition pressure for both;phases is found to be equal to -10 GPa. Subsequently, assessment of four;of the most used empirical potentials for UO2-Morelon, Arima, Basak, and;Yakub-have been carried out comparing the equations of state with those;found with DFT calculations. The Morelon potential has been found to be;the most accurate to describe the different urania polymorphs. Using;this empirical potential and a dedicated minimization procedure,;complete transition pathways between the ground state (Fm (3) over barm);and both tensile structures (Pbcn or P4(2)/mnm) are described. Finally,;uniaxial tensile load molecular dynamics simulations have been;performed. It has been found that for load in the AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Bakr, M.;Souliou, S. M.;Blanco-Canosa, S.;Zegkinoglou, I.;Gretarsson, H.;Strempfer, J.;Loew, T.;Lin, C. T.;Liang, R.;Bonn, D. A.;Hardy, W. N.;Keimer, B.;Le Tacon, M.;Lattice dynamical signature of charge density wave formation in;underdoped YBa2Cu3O6+x;PHYSICAL REVIEW B;88;21;214517;10.1103/PhysRevB.88.214517;DEC 31 2013;2013;We report a detailed Raman scattering study of the lattice dynamics in;detwinned single crystals of the underdoped high-temperature;superconductor YBa2Cu3O6+x (x = 0.75, 0.6, 0.55, and 0.45). Whereas at;room temperature the phonon spectra of these compounds are similar to;that of optimally doped YBa2Cu3O6.99, additional Raman-active modes;appear upon cooling below similar to 170-200Kin underdoped crystals. The;temperature dependence of these new features indicates that they are;associated with the incommensurate charge density wave state recently;discovered using synchrotron x-ray scattering techniques on the same;single crystals. Raman scattering thus has the potential to explore the;evolution of this state under extreme conditions.;Zegkinoglou, Ioannis/H-2343-2013; Le Tacon, Mathieu/D-8023-2011;Le Tacon, Mathieu/0000-0002-5838-3724;6;0;0;0;6;1098-0121;WOS:000332165200002;;;J;Benedicto, Jessica;Centeno, Emmanuel;Polles, Remi;Moreau, Antoine;Ultimate resolution of indefinite metamaterial flat lenses;PHYSICAL REVIEW B;88;24;245138;10.1103/PhysRevB.88.245138;DEC 31 2013;2013;We propose an approach allowing a systematic optimization of lenses;based on hyperbolic metamaterials. The lensing properties of these;highly anisotropic materials are summed up in a complex effective index;extracted from the complex dispersion relation. The analytical;expression of this effective index in the homogenization regime or its;direct computation from the Bloch band diagram in the resonant regime;leads to hyperbolic metamaterials that outperform the state-of-art flat;lenses. We show that feasible metal-dielectric multilayers provide;superresolved images for visible light (around 400 nm) even when fully;taking absorption into account.;0;0;0;0;0;1098-0121;WOS:000332166700001;;;J;Biswas, P. K.;Amato, A.;Baines, C.;Khasanov, R.;Luetkens, H.;Lei, Hechang;Petrovic, C.;Morenzoni, E.;Low superfluid density and possible multigap superconductivity in the;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;88;22;224515;10.1103/PhysRevB.88.224515;DEC 31 2013;2013;The magnetic penetration depth lambda as a function of temperature in;Bi4O4S3 was studied by muon-spin-spectroscopy measurements. The;superfluid density of Bi4O4S3 is found to be very low. The dependence of;lambda (2) on temperature possibly suggests the existence of two;s-wave-type energy gaps with the zero-temperature values of 0.93 (3) and;0.09 (4) meV. The upturn in the temperature dependence of the upper;critical field close to T-c further supports multigap superconductivity;in Bi4O4S3. The presence of two superconducting energy gaps is;consistent with theoretical and other experimental studies. However, a;single-gap s-wave model fit with a gap of 0.88 (2) meV cannot be ruled;out completely. The value of lambda(T) at T = 0 K is estimated to be;lambda(0) = 861 (17) nm, one of the largest of all known layered;superconductors, reflecting a very low superfluid density.;Luetkens, Hubertus/G-1831-2011;4;0;0;0;4;1098-0121;WOS:000332166200005;;;J;Cao, G.;Qi, T. F.;Li, L.;Terzic, J.;Cao, V. S.;Yuan, S. J.;Tovar, M.;Murthy, G.;Kaul, R. K.;Evolution of magnetism in the single-crystal honeycomb iridates;(Na1-xLix)(2)IrO3;PHYSICAL REVIEW B;88;22;220414;10.1103/PhysRevB.88.220414;DEC 31 2013;2013;We report the successful synthesis of single crystals of the layered;iridate (Na1-xLix)(2)IrO3, 0 <= x <= 0.9, and a thorough study of its;structural, magnetic, thermal, and transport properties. This compound;allows a controlled interpolation between Na2IrO3 and Li2IrO3, while;maintaining the quantum magnetism of the honeycomb Ir4+ planes. The;measured phase diagram demonstrates a suppression of the Neel;temperature T-N at an intermediate x, indicating that the magnetic;orders in Na2IrO3 and Li2IrO3 are distinct. X-ray data show that for x;approximate to 0.7, when T-N is suppressed the most, the honeycomb;structure is least distorted, leading to the speculation that at this;intermediate doping of the material is closest to the spin liquid that;has been sought after in Na2IrO3 and Li2IrO3. By analyzing our magnetic;data with a single-ion theoretical model we also show that the trigonal;splitting on the Ir4+ ions changes sign from Na2IrO3 to Li2IrO3.;8;0;0;0;8;1098-0121;WOS:000332166200001;;;J;Farr, Warrick G.;Creedon, Daniel L.;Goryachev, Maxim;Benmessai, Karim;Tobar, Michael E.;Ultrasensitive microwave spectroscopy of paramagnetic impurities in;sapphire crystals at millikelvin temperatures;PHYSICAL REVIEW B;88;22;224426;10.1103/PhysRevB.88.224426;DEC 31 2013;2013;Progress in the emerging field of engineered quantum systems requires;the development of devices that can act as quantum memories. The;realization of such devices by doping solid-state cavities with;paramagnetic ions imposes a tradeoff between ion concentration and;cavity coherence time. Here, we investigate an alternative approach;involving interactions between photons and naturally occurring impurity;ions in ultrapure crystalline microwave cavities exhibiting;exceptionally high quality factors. We implement a hybrid whispering;gallery/electron spin resonance method to perform rigorous spectroscopy;of an undoped single-crystal sapphire resonator over the frequency range;8-19 GHz, and at external applied DC magnetic fields up to 0.9 T.;Measurements of high-purity sapphire cooled close to 100 mK reveal the;presence of Fe3+, Cr3+, and V2+ impurities. A host of electron;transitions are measured and identified, including the two-photon;classically forbidden quadrupole transition (Delta m(s) = 2) for Fe3+,;as well as hyperfine transitions of V2+.;Tobar, Michael/C-9763-2009; Creedon, Daniel/A-8772-2010; Goryachev, Maxim/K-5851-2013;Creedon, Daniel/0000-0003-2912-3381; Goryachev,;Maxim/0000-0002-0257-4054;5;0;0;0;5;1098-0121;WOS:000332166200004;;;J;Joseph, B.;Bendele, M.;Simonelli, L.;Maugeri, L.;Pyon, S.;Kudo, K.;Nohara, M.;Mizokawa, T.;Saini, N. L.;Local structural displacements across the structural phase transition in;IrTe2: Order-disorder of dimers and role of Ir-Te correlations;PHYSICAL REVIEW B;88;22;224109;10.1103/PhysRevB.88.224109;DEC 31 2013;2013;We have studied local structure of IrTe2 by Ir L-3-edge extended x-ray;absorption fine structure (EXAFS) measurements as a function of;temperature to investigate origin of the observed structural phase;transition at T-s similar to 270 K. The EXAFS results show an appearance;of longer Ir-Te bond length (Delta R similar to 0.05 angstrom) at T <;T-s. We have found Ir-Ir dimerization, characterized by distinct Ir-Ir;bond lengths (Delta R similar to 0.13 angstrom), existing both above and;below T-s. The results suggest that the phase transition in IrTe2 should;be an order-disorder-like transition of Ir-Ir dimers assisted by Ir-Te;bond correlations, thus indicating important role of the interaction;between the Ir 5d and Te 5p orbitals in this transition.;KUDO, Kazutaka/B-1468-2011; NOHARA, Minoru/B-1476-2011;3;0;0;0;3;1098-0121;WOS:000332166200003;;;J;Kobayashi, Keita;Machida, Masahiko;Ota, Yukihiro;Nori, Franco;Massless collective excitations in frustrated multiband superconductors;PHYSICAL REVIEW B;88;22;224516;10.1103/PhysRevB.88.224516;DEC 31 2013;2013;We study collective excitations in three- and four-band superconductors;with interband frustration, which causes neither 0 nor pi interband;phases in the superconducting state. Using a low-energy spin Hamiltonian;originating from a multiband tight-binding model, we find that mass;reduction of a Leggett mode occurs in a wide parameter region of this;four-band system. As a limiting case, we have a massless Leggett mode.;This massless mode is related to the fact that the mean-field energy;does not depend on a relative phase of superconducting order parameters.;In other words, we find a link of the massless mode with a degeneracy;between a time-reversal-symmetry-breaking state (neither 0 nor pi;phases) and a time-reversal-symmetric state (either 0 or pi phases).;Therefore, the mass of collective modes characterizes well the;time-reversal symmetry in frustrated multiband superconductors.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332166200006;;;J;Ohtsubo, Yoshiyuki;Yaji, Koichiro;Hatta, Shinichiro;Okuyama, Hiroshi;Aruga, Tetsuya;Two-dimensional states localized in subsurface layers of Ge(111);PHYSICAL REVIEW B;88;24;245310;10.1103/PhysRevB.88.245310;DEC 31 2013;2013;The origin of the two-dimensional surface states localized in subsurface;regions of the Ge(111) substrate has been studied by;density-functional-theory calculations, which were compared with the;experimental results of angle-resolved photoelectron spectroscopy. For;the Bi/Ge(111)-(root 3 x root 3)R30 degrees, Br/Ge(111)-(1x1), and;Tl/Ge(111)-(1x1) surfaces, we found that the surface states are;classified into three groups. The energy dispersion and the orbital;character for each band implies the relationship between the subsurface;states and the bulk heavy-hole, light-hole, and spin-orbit split-off;bands. These results indicate that the subsurface states originate from;the bulk bands that are perturbed due to the truncation of the;three-dimensional periodicity at the surface.;Okuyama, Hiroshi/H-7570-2014;1;0;0;0;1;1098-0121;WOS:000332166700002;;;J;Oiwake, M.;Ootsuki, D.;Noji, T.;Hatakeda, T.;Koike, Y.;Horio, M.;Fujimori, A.;Saini, N. L.;Mizokawa, T.;Electronic structure and phase separation of superconducting and;nonsuperconducting KxFe2-ySe2 revealed by x-ray photoemission;spectroscopy;PHYSICAL REVIEW B;88;22;224517;10.1103/PhysRevB.88.224517;DEC 31 2013;2013;We have investigated the electronic structure of superconducting (SC);and nonsuperconducting (non-SC) KxFe2-ySe2 using x-ray photoemission;spectroscopy (XPS). The spectral shape of the Fe 2p XPS is found to;depend on the amount of Fe vacancies. The Fe 2p(3/2) peak of the SC and;non-SC Fe-rich samples is accompanied by a shoulder structure on the;lower binding energy side, which can be attributed to the metallic phase;embedded in the Fe2+ insulating phase. The absence of the shoulder;structure in the non-SC Fe-poor sample allows us to analyze the Fe 2p;spectra using a FeSe4 cluster model. The Fe 3d-Se 4p charge-transfer;energy of the Fe2+ insulating phase is found to be similar to 2.3 eV;which is smaller than the Fe 3d-Fe 3d Coulomb interaction of similar to;3.5 eV. This indicates that the Fe2+ insulating state is the;charge-transfer type in the Zaanen-Sawatzky-Allen scheme. We also find a;substantial change in the valence-band XPS as a function of Fe content;and temperature. The metallic state at the Fermi level is seen in the SC;and non-SC Fe-rich samples and tends to be enhanced with cooling in the;SC sample.;0;0;0;0;0;1098-0121;WOS:000332166200007;;;J;Park, Keeseong;Nomura, Yusuke;Arita, Ryotaro;Llobet, Anna;Louca, Despina;Local strain and anharmonicity in the bonding of Bi2Se3-xTex topological;insulators;PHYSICAL REVIEW B;88;22;224108;10.1103/PhysRevB.88.224108;DEC 31 2013;2013;Using neutron diffraction and the pair density function analysis, the;local atomic structure of the three-dimensional Bi2Se3-xTex (x = 0, 1,;2, and 3) topological insulator is investigated. The substitution of Te;for Se in Bi2Se3-xTex (x = 0, 1, 2, and 3) is not random and its;preferred site is at the edges of the quintuple layer. This generates a;local strain due to the atom size mismatch between Se and Te. The site;preference is surprising given that the Bi to chalcogen bonds are;strongest when the ions are at the edges than in the middle layer. The;(Se/Te) atoms in the middle sublayer of the quintuple are coupled more;softly to the Bi atoms than those of the edges and have lower Debye;temperatures. This suggests that the atomic properties within the;quintuple layer are different than those at the edges. Additionally, the;results from band structure and density of state calculations are;reported to show the dependence of doping and temperature.;Arita, Ryotaro/D-5965-2012; Llobet, Anna/B-1672-2010;Arita, Ryotaro/0000-0001-5725-072X;;0;0;0;0;0;1098-0121;WOS:000332166200002;;;J;Pogorelov, Y. G.;Santos, M. C.;Loktev, V. M.;Impurity effects on electronic transport in ferropnictide;superconductors;PHYSICAL REVIEW B;88;22;224518;10.1103/PhysRevB.88.224518;DEC 31 2013;2013;Effects of impurities and disorder on transport properties by electronic;quasiparticles in superconducting iron pnictides are theoretically;considered. The most prominent new features compared to the case of pure;material should appear at high enough impurity concentration when a;specific narrow band of conducting quasiparticle states can develop;within the superconducting gap, around the position of localized;impurity level by a single impurity center. The predicted specific;threshold effects in the frequency-dependent optical conductivity and;temperature-dependent thermal conductivity and also in Seebeck and;Peltier coefficients can have interesting potentialities for practical;applications.;0;0;0;0;0;1098-0121;WOS:000332166200008;;;J;Reich, K. V.;Chen, T.;Efros, Al. L.;Shklovskii, B. I.;Photoluminescence in arrays of doped semiconductor nanocrystals;PHYSICAL REVIEW B;88;24;245311;10.1103/PhysRevB.88.245311;DEC 31 2013;2013;We study the dependence of the quantum yield of photoluminescence of a;dense, periodic array of semiconductor nanocrystals (NCs) on the level;of doping and NC size. Electrons introduced to NCs via doping quench;photoluminescence by the Auger process, so that practically only NCs;without electrons contribute to the photoluminescence. Computer;simulation and analytical theory are used to find a fraction of such;empty NCs as a function of the average number of donors per NC and NC;size. For an array of small spherical NCs, the quantization gap between;1S and 1P levels leads to transfer of electrons from NCs with large;number of donors to those without donors. As a result, empty NCs become;extinct, and photoluminescence is quenched abruptly at an average number;of donors per NC close to 1.8. The relative intensity of;photoluminescence is shown to correlate with the type of hopping;conductivity of an array of NCs.;2;0;0;0;2;1098-0121;WOS:000332166700003;;;J;Rousse, Gwenaelle;Rodriguez-Carvajal, Juan;Wurm, Calin;Masquelier, Christian;Spiral magnetic structure in the iron diarsenate LiFeAs2O7: A neutron;diffraction study;PHYSICAL REVIEW B;88;21;214433;10.1103/PhysRevB.88.214433;DEC 31 2013;2013;The magnetic structure of LiFeAs2O7 (monoclinic, space group C2) has;been solved using neutron powder diffraction. This compound presents an;antiferromagnetic behavior characterized by a long-range ordering;observed in the neutron diffraction patterns below the Neel temperature;(T-N = 35 K). The magnetic structure is found to be incommensurate with;respect to the nuclear structure, the magnetic peaks being indexed with;a propagation vector k = (0.709, 0, 0.155). The magnetic moments form a;general spiral (helical-cycloidal) arrangement with a constant magnetic;moment of 4.21 mu B. The magnetic structure is discussed in terms of;super-super exchange interactions involving two oxygen atoms belonging;to an AsO4 tetrahedron, and compared with the magnetic structure of the;di-phosphate analogue LiFeP2O7. The presence of triangular super-super;exchange paths is believed to be at the origin of this incommensurate;magnetic structure. The potential of LiFeAs2O7 as a possible;multiferroic material is discussed.;Rodriguez-Carvajal, Juan/C-4362-2008;Rodriguez-Carvajal, Juan/0000-0001-5582-2632;1;0;0;0;1;1098-0121;WOS:000332165200001;;;J;Smith, Peter M.;Kennett, Malcolm P.;Disorder effects on superconducting tendencies in the checkerboard;Hubbard model;PHYSICAL REVIEW B;88;21;214518;10.1103/PhysRevB.88.214518;DEC 31 2013;2013;The question of whether spatially inhomogeneous hopping in the two;dimensional Hubbard model can lead to enhancement of superconductivity;has been tackled by a number of authors in the context of the;checkerboard Hubbard model (CHM). We address the effects of disorder on;superconducting properties of the CHM by using exact diagonalization;calculations for both potential and hopping disorder. We characterize;the superconducting tendencies of the model by focusing on the;pair-binding energy, the spin gap, and d-wave pairing order parameter.;We find that superconducting tendencies, particularly the pair-binding;energy, are more robust to disorder when there is inhomogeneous hopping;than for the uniform Hubbard model. We also study all possible staggered;potentials for an eight-site CHM cluster and relate the behavior of;these configurations to the disordered system.;Kennett, Malcolm/I-2898-2012;1;0;0;0;1;1098-0121;WOS:000332165200003;;;J;Cortes-Huerto, R.;Sondon, T.;Saul, A.;Role of temperature in the formation and growth of gold monoatomic;chains: A molecular dynamics study;PHYSICAL REVIEW B;88;23;235438;10.1103/PhysRevB.88.235438;DEC 31 2013;2013;The effect of temperature on the formation and growth of monoatomic;chains is investigated by extensive molecular dynamics simulations using;a semiempirical potential based on the second-moment approximation to;the tight-binding Hamiltonian. Gold nanowires, with an aspect ratio of;similar to 13 and a cross section of similar to 1 nm(2), are stretched;at a rate of 3 m/s in the range of temperatures 5-600 K with 50 initial;configurations per temperature. A detailed study on the probability to;form monoatomic chains (MACs) is presented. Two domains are apparent in;our simulations: one at T < 100 K, where MACs develop from crystalline;disorder at the constriction, and the other at T > 100 K, where MACs;form as a consequence of plastic deformation of the nanowire. Our;results show that the average length of the formed MACs maximizes at T =;150 K, which is supported by simple energy arguments.;0;0;0;0;0;1098-0121;WOS:000332166400004;;;J;Despoja, V.;Loncaric, I.;Mowbray, D. J.;Marusic, L.;Quasiparticle spectra and excitons of organic molecules deposited on;substrates: G(0)W(0)-BSE approach applied to benzene on graphene and;metallic substrates;PHYSICAL REVIEW B;88;23;235437;10.1103/PhysRevB.88.235437;DEC 31 2013;2013;We present an alternative methodology for calculating the quasiparticle;energy, energy loss, and optical spectra of a molecule deposited on;graphene or a metallic substrate. To test the accuracy of the method it;is first applied to the isolated benzene (C6H6) molecule. The;quasiparticle energy levels and especially the energies of the benzene;excitons (triplet, singlet, optically active and inactive) are in very;good agreement with available experimental results. It is shown that the;vicinity of the various substrates [pristine/doped graphene or (jellium);metal surface] reduces the quasiparticle highest occupied molecular;orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap by an amount;that slightly depends on the substrate type. This is consistent with the;simple image theory predictions. It is even shown that the substrate;does not change the energy of the excitons in the isolated molecule. We;prove (in terms of simple image theory) that energies of the excitons;are indeed influenced by two mechanisms which cancel each other. We;demonstrate that the benzene singlet optically active (E-1u) exciton;couples to real electronic excitations in the substrate. This causes it;substantial decay, such as Gamma approximate to 174 meV for pristine;graphene and Gamma approximate to 362 meV for metal surfaces as the;substrate. However, we find that doping graphene does not influence the;E-1u exciton decay rate.;Mowbray, Duncan/A-5531-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Loncaric, Ivor/J-6677-2014;Mowbray, Duncan/0000-0002-8520-0364; Loncaric, Ivor/0000-0002-5554-4641;2;0;0;0;2;1098-0121;WOS:000332166400003;;;J;Dutt, Prasenjit apq;Le Hur, Karyn;Strongly correlated thermoelectric transport beyond linear response;PHYSICAL REVIEW B;88;23;235133;10.1103/PhysRevB.88.235133;DEC 31 2013;2013;We investigate nonlinear thermoelectric transport through quantum;impurity systems with strong on-site interactions. We show that the;steady-state transport through interacting quantum impurities in contact;with electron reservoirs at significantly different temperatures can be;captured by an effective-equilibrium density matrix, expressed compactly;in terms of the Lippmann-Schwinger operators of the system. In addition,;the reservoirs can be maintained at arbitrary chemical potentials. The;interplay between the temperature gradient and bias voltage gives rise;to a nontrivial breaking of particle-hole symmetry in the strongly;correlated regime, manifest in the Abrikosov-Suhl localized electron;resonance. This purely many-body effect, which is in agreement with;experimental results, is beyond the purview of mean-field arguments.;2;0;0;0;2;1098-0121;WOS:000332166400001;;;J;Li, Yunpu;King, Jonathan P.;Reimer, Jeffrey A.;Meriles, Carlos A.;Near-band-gap photoinduced nuclear spin dynamics in semi-insulating;GaAs: Hyperfine- and quadrupolar-driven relaxation;PHYSICAL REVIEW B;88;23;235211;10.1103/PhysRevB.88.235211;DEC 31 2013;2013;Understanding and manipulating spin polarization and transport in the;vicinity of semiconductor-hosted defects is a problem of present;technological and fundamental importance. Here, we use high-field;magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei;in semi-insulating GaAs. Our experiments benefit from the conditions;created in the limit of low illumination intensities, where intermittent;occupation of the defect site by photoexcited electrons leads to;electric field gradient fluctuations and concomitant spin relaxation of;the neighboring quadrupolar nuclei. We find indication of a;heterogeneous distribution of polarization, governed by different;classes of defects activated by either weak or strong laser excitation.;Upon application of a train of light pulses of variable repetition rate;and on/off ratio, we uncover an intriguing regime of mesoscale nuclear;spin diffusion restricted by long-range, nonuniform electric field;gradients. Given the slow time scale governing nuclear spin evolution,;such optically induced polarization patterns could be exploited as a;contrast mechanism to expose dark lattice defects or localized charges;with nanoscale resolution.;0;0;0;0;0;1098-0121;WOS:000332166400002;;;J;Adolff, Christian F.;Haenze, Max;Vogel, Andreas;Weigand, Markus;Martens, Michael;Meier, Guido;Self-organized state formation in magnonic vortex crystals;PHYSICAL REVIEW B;88;22;224425;10.1103/PhysRevB.88.224425;DEC 30 2013;2013;We study the polarization-state formation in magnonic vortex crystals;via scanning transmission x-ray microscopy. Self-organized state;formation is observed by adiabatic reduction of a high-frequency field;excitation. The emerging polarization patterns are shown to depend on;the frequency of excitation and the strength of the dipolar interaction;between the elements. In spite of the complexity of the investigated;system, global order caused by local interactions creates polarization;states with a high degree of symmetry. A fundamental dipole model and;coupled equations of motion are adopted to analytically describe the;experimental results. The emerging states can be predicted by a;fundamental stability criterion based on the excitability of eigenmodes;in the crystal. Micromagnetic simulations give additional insight into;the underlying processes.;2;0;0;0;2;1098-0121;WOS:000332162300008;;;J;Berridge, A. M.;Green, A. G.;Nonequilibrium conductivity at quantum critical points;PHYSICAL REVIEW B;88;22;220512;10.1103/PhysRevB.88.220512;DEC 30 2013;2013;Quantum criticality provides an important route to revealing universal;nonequilibrium behavior. A canonical example of a critical point is the;Bose-Hubbard model, which we study under the application of an electric;field. A Boltzmann transport formalism and is an element of expansion;are used to obtain the nonequilibrium conductivity and current noise.;This approach allows us to explicitly identify how a universal;nonequilibrium steady state is maintained, by identifying the;rate-limiting step in balancing Joule heating and dissipation to a heat;bath. It also reveals that the nonequilibrium distribution function is;very far from a thermal distribution.;1;0;0;0;1;1098-0121;WOS:000332162300004;;;J;Bojesen, Troels Arnfred;Babaev, Egor;Sudbo, Asle;Time reversal symmetry breakdown in normal and superconducting states in;frustrated three-band systems;PHYSICAL REVIEW B;88;22;220511;10.1103/PhysRevB.88.220511;DEC 30 2013;2013;We discuss the phase diagram and phase transitions in U(1) x Z(2);three-band superconductors with broken time reversal symmetry. We find;that beyond mean-field approximation and for sufficiently strong;frustration of interband interactions there appears an unusual metallic;state precursory to a superconducting phase transition. In that state,;the system is not superconducting. Nonetheless, it features a;spontaneously broken Z(2) time reversal symmetry. By contrast, for weak;frustration of interband coupling the energy of a domain wall between;different Z(2) states is low and thus fluctuations restore broken time;reversal symmetry in the superconducting state at low temperatures.;2;0;0;0;2;1098-0121;WOS:000332162300003;;;J;Gracia-Salgado, Rogelio;Garcia-Chocano, Victor M.;Torrent, Daniel;Sanchez-Dehesa, Jose;Negative mass density and rho-near-zero quasi-two-dimensional;metamaterials: Design and applications;PHYSICAL REVIEW B;88;22;224305;10.1103/PhysRevB.88.224305;DEC 30 2013;2013;We report the design and the characterization of artificial structures;made of periodical distributions of structured cylindrical scatterers;embedded in a two-dimensional (2D) waveguide. For certain values of;their geometrical parameters they show simultaneously negative effective;bulk modulus and negative effective mass density. Here our analysis is;focused on the frequencies where they behave like materials with;negative density or density near zero (DNZ). The scattering units;consist of a rigid cylindrical core surrounded by an anisotropic shell;divided in angular sectors. The units are embedded in a 2D waveguide;whose height is smaller than the length of the cylinders, which makes;the structure quasi-2D. We have obtained the dispersion relation of the;surface acoustic waves excited at frequencies with negative effective;density. Also, we report phenomena associated with their DNZ behavior,;such as tunneling through narrow channels, control of the radiation;field, perfect transmission through sharp corners, and power splitting.;Preliminary experiments performed on samples with millimeter-scale;dimensions demonstrated their single-negative behavior, with the main;drawback being the strong losses measured at the frequencies where the;negative behavior is observed.;sanchez-dehesa, jose/L-9726-2014;1;0;0;0;1;1098-0121;WOS:000332162300006;;;J;Klar, D.;Brena, B.;Herper, H. C.;Bhandary, S.;Weis, C.;Krumme, B.;Schmitz-Antoniak, C.;Sanyal, B.;Eriksson, O.;Wende, H.;Oxygen-tuned magnetic coupling of Fe-phthalocyanine molecules to;ferromagnetic Co films;PHYSICAL REVIEW B;88;22;224424;10.1103/PhysRevB.88.224424;DEC 30 2013;2013;The coupling of submonolayer coverages of Fe-phthalocyanine molecules on;bare and oxygen-covered ferromagnetic Co(001) films was studied by;x-ray-absorption spectroscopy, especially the x-ray magnetic circular;dichroism, in combination with density functional theory. We observe;that the magnetic moments of the paramagnetic molecules are aligned even;at room temperature, resulting from a magnetic coupling to the;substrate. While the magnetization of the Fe ions directly adsorbed on;the Co surface is parallel to the magnetization of the Co film, the;introduction of an oxygen interlayer leads to an antiparallel alignment.;As confirmed by theory, the coupling strength is larger for the system;FePc/Co than for FePc/O/Co, causing a stronger temperature dependence of;the Fe magnetization for the latter system. Furthermore, the;calculations reveal that the coupling mechanism changes due to the O;layer from mostly direct exchange to Co of the bare surface to a 180;degrees antiferromagnetic superexchange via the O atoms. Finally, by;comparing the experimental x-ray-absorption spectra at the N K edge with;the corresponding calculations, the contribution of the individual;orbitals has been determined and the two inequivalent N atoms of the;molecules could be distinguished.;Wende, Heiko/J-8505-2012; Schmitz-Antoniak, Carolin/C-2234-2009;Schmitz-Antoniak, Carolin/0000-0002-8450-3515;3;0;0;0;3;1098-0121;WOS:000332162300007;;;J;Moor, Andreas;Volkov, Anatoly F.;Efetov, Konstantin B.;Time-dependent equation for the magnetic order parameter near the;quantum critical point in multiband superconductors with a spin-density;wave;PHYSICAL REVIEW B;88;22;224513;10.1103/PhysRevB.88.224513;DEC 30 2013;2013;Using a simple two-band model for Fe-based pnictides and the generalized;Eilenberger equation, we present a microscopic derivation of a;time-dependent equation for the amplitude of the spin-density wave near;the quantum critical point where it turns to zero. This equation;describes the dynamics of the magnetic (m), as well as the;superconducting order parameter (Delta). It is valid at low temperatures;T and small m (T, m << Delta) in a region of coexistence of both order;parameters, m and Delta. The boundary of this region is found in the;space of the nesting parameter {mu(0), mu(f)}, where mu(0) describes the;relative position of the electron and the hole pockets on the energy;scale and mu(phi) accounts for the ellipticity of the electron pocket.;At low T the number of quasiparticles is small due to the presence of;the energy gap Delta, and therefore the quasiparticles do not play a;role in the relaxation of m. This circumstance allows one to derive the;time-dependent equation for m in contrast to the case of conventional;superconductors for which the time-dependent Ginzburg-Landau equation;can be derived near T-c only in some special cases (high concentration;of paramagnetic impurities) [L. P. Gor'kov and G. M. Eliashberg, Sov.;Phys. JETP 27, 328 (1968)]. In the stationary case the derived equation;is valid at arbitrary temperatures. We find a solution of the stationary;equation which describes a domain wall in the magnetic structure. In the;center of the domain wall the superconducting order parameter has a;maximum, which means a local enhancement of superconductivity. Using the;derived time-dependent equation for m, we investgate also the stability;of a uniform commensurate spin-density wave (SDW) and obtain the values;of {mu(0), mu(f)} at which the first-order transition into the state;with m = 0 takes place or the transition to the state with an;inhomogeneous SDW occurs.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000332162300009;;;J;Singh, Yogesh;Tokiwa, Y.;Dong, J.;Gegenwart, P.;Spin liquid close to a quantum critical point in Na4Ir3O8;PHYSICAL REVIEW B;88;22;10.1103/PhysRevB.88.220413;DEC 30 2013;2013;Na4Ir3O8 is a candidate material for a three-dimensional quantum spin;liquid on the hyperkagome lattice. We present thermodynamic measurements;of heat capacity C and thermal conductivity kappa on high-quality;polycrystalline samples of Na4Ir3O8 down to T = 500 and 75 mK,;respectively. Absence of long-range magnetic order down to T = 75 mK;strongly supports claims of a spin-liquid ground state. The constant;magnetic susceptibility chi below T approximate to 25 K and the presence;of a small but finite linear-T term in C(T) suggest the presence of;gapless spin excitations. Additionally, the magnetic Gruneisen ratio;shows a divergence as T -> 0 K and a scaling behavior, which clearly;demonstrates that Na4Ir3O8 is situated close to a zero-field QCP.;Dong, Jinkui/J-3603-2013;2;0;0;0;2;1098-0121;WOS:000332162300002;;;J;Taen, Toshihiro;Ohtake, Fumiaki;Akiyama, Hiroki;Inoue, Hiroshi;Sun, Yue;Pyon, Sunseng;Tamegai, Tsuyoshi;Pair-breaking effects induced by 3-MeV proton irradiation in;Ba1-xKxFe2As2;PHYSICAL REVIEW B;88;22;224514;10.1103/PhysRevB.88.224514;DEC 30 2013;2013;Pair-breaking effects induced by 3-MeV proton irradiations are examined;in underdoped, optimally doped, and overdoped Ba1-xKxFe2As2 single;crystals in terms of suppression of the superconducting critical;temperature T-c. The small residual resistivity (RR) in as-grown;crystals shows the presence of negligible intrinsic scatterings, which;makes this material a model system for studying the effect of;artificially introduced scatterings. The RR and Tc change linearly with;the proton dose. As in the case of proton irradiation in Co-doped;BaFe2As2, we do not detect any low-temperature upturns in resistivity;attributable to magnetic scattering or localization. Regardless of K;doping levels, the critical value of the normalized scattering rate is;much higher than that expected in s(perpendicular to)-wave;superconductors.;悦, å™/B-1373-2013;悦, å™/0000-0002-5189-5460;3;0;0;0;3;1098-0121;WOS:000332162300010;;;J;Yan, Ming;Kakay, Attila;Andreas, Christian;Hertel, Riccardo;Spin-Cherenkov effect and magnonic Mach cones;PHYSICAL REVIEW B;88;22;220412;10.1103/PhysRevB.88.220412;DEC 30 2013;2013;We report on the Cherenkov-type excitation of spin waves (SWs) in;ferromagnets. Our micromagnetic simulations show that a localized;magnetic field pulse moving sufficiently fast along the surface of a;ferromagnet generates a SW boom, with a Mach-type cone of propagating;wave fronts. The SWs are formed when the velocity of the source exceeds;the propagation speed of SWs. Unlike the single cone of the usual;Cherenkov effect, we find that the magnetic Mach cone consists of two;wave fronts with different wave numbers. In patterned thin strips, this;magnetic analog of the Cherenkov effect should enable the excitation of;SWs with well-defined and velocity-dependent frequency. It thereby;provides a promising route towards tunable SW generation, with important;potential for applications in magnonic devices.;2;0;0;0;2;1098-0121;WOS:000332162300001;;;J;Yang, Lusann;Ceder, Gerbrand;Data-mined similarity function between material compositions;PHYSICAL REVIEW B;88;22;224107;10.1103/PhysRevB.88.224107;DEC 30 2013;2013;A new method for assessing the similarity of material compositions is;described. A similarity measure is important for the classification and;clustering of compositions. The similarity of the material compositions;is calculated utilizing a data-mined ionic substitutional similarity;based upon the probability with which two ions will substitute for each;other within the same structure prototype. The method is validated via;the prediction of crystal structure prototypes for oxides from the;Inorganic Crystal Structure Database, selecting the correct prototype;from a list of known prototypes within five guesses 75% of the time. It;performs particularly well on the quaternary oxides, selecting the;correct prototype from a list of known prototypes on the first guess 65%;of the time.;1;0;0;0;1;1098-0121;WOS:000332162300005;;;J;Bartelt, Norman C.;Nie, Shu;Starodub, Elena;Bernal-Villamil, Ivan;Gallego, Silvia;Vergara, Lucia;McCarty, Kevin F.;de la Figuera, Juan;Order-disorder phase transition on the (100) surface of magnetite;PHYSICAL REVIEW B;88;23;235436;10.1103/PhysRevB.88.235436;DEC 30 2013;2013;Using low-energy electron diffraction, we show that the room-temperature;(root 2 x root 2) R45 degrees reconstruction of Fe3O4(100) reversibly;disorders at similar to 450 degrees C. Short-range order persists above;the transition, suggesting that the transition is second order and;Ising-like. We interpret the transition in terms of a model in which;subsurface Fe3+ is replaced by Fe2+ as the temperature is raised. This;model reproduces the structure of antiphase boundaries previously;observed with scanning tunneling microscopy, as well as the continuous;nature of the transition. To account for the observed transition;temperature, the energy cost of each charge rearrangement is 82 meV.;de la Figuera, Juan/E-7046-2010; Gallego Queipo, Silvia/J-3411-2012;de la Figuera, Juan/0000-0002-7014-4777;;1;0;0;0;1;1098-0121;WOS:000332163500007;;;J;Cazorla, Claudio;Iniguez, Jorge;Insights into the phase diagram of bismuth ferrite from quasiharmonic;free-energy calculations;PHYSICAL REVIEW B;88;21;214430;10.1103/PhysRevB.88.214430;DEC 30 2013;2013;We have used first-principles methods to investigate the phase diagram;of multiferroic bismuth ferrite (BiFeO3 or BFO), revealing the energetic;and vibrational features that control the occurrence of various relevant;structures. More precisely, we have studied the relative stability of;four low-energy BFO polymorphs by computing their free energies within;the quasiharmonic approximation, introducing a practical scheme that;allows us to account for the main effects of spin disorder. As expected,;we find that the ferroelectric ground state of the material (with R3c;space group) transforms into an orthorhombic paraelectric phase (Pnma);upon heating. We show that this transition is not significantly affected;by magnetic disorder, and that the occurrence of the Pnma structure;relies on its being vibrationally (although not elastically) softer than;the R3c phase. We also investigate a representative member of the family;of nanotwinned polymorphs recently predicted for BFO [S. Prosandeev et;al., Adv. Funct. Mater. 23, 234 (2013)] and discuss their possible;stabilization at the boundaries separating the R3c and Pnma regions in;the corresponding pressure-temperature phase diagram. Finally, we;elucidate the intriguing case of the so-called supertetragonal phases of;BFO: Our results explain why such structures have never been observed in;the bulk material, despite their being stable polymorphs of very low;energy. Quantitative comparison with experiment is provided whenever;possible, and the relative importance of various physical effects;(zero-point motion, spin fluctuations, thermal expansion) and technical;features (employed exchange-correlation energy density functional) is;discussed. Our work attests the validity and usefulness of the;quasiharmonic scheme to investigate the phase diagram of this complex;oxide, and prospective applications are discussed.;Iniguez, Jorge/B-6856-2009;Iniguez, Jorge/0000-0001-6435-3604;0;0;0;0;0;1098-0121;WOS:000332161300005;;;J;Chandrasekaran, Anand;Damjanovic, Dragan;Setter, Nava;Marzari, Nicola;Defect ordering and defect-domain-wall interactions in PbTiO3: A;first-principles study;PHYSICAL REVIEW B;88;21;214116;10.1103/PhysRevB.88.214116;DEC 30 2013;2013;The properties of ferroelectric materials, such as lead zirconate;titanate (PZT), are heavily influenced by the interaction of defects;with domain walls. These defects are either intrinsic or are induced by;the addition of dopants. We study here PbTiO3 (the end member of a key;family of solid solutions) in the presence of acceptor (Fe) and donor;(Nb) dopants, and the interactions of the different defects and defect;associates with the domain walls. For the case of iron acceptors, the;calculations point to the formation of defect associates involving an;iron substitutional defect and a charged oxygen vacancy (Fe-Ti'-V-O '').;This associate exhibits a strong tendency to align in the direction of;the bulk polarization; in fact, ordering of defects is also observed in;pure PbTiO3 in the form of lead-oxygen divacancies. Conversely,;calculations on donor-doped PbTiO3 do not indicate the formation of;polar defect complexes involving donor substitutions. Last, it is;observed that both isolated defects in donor-doped materials and defect;associates in acceptor-doped materials are more stable at 180 degrees.;domain walls. However, polar defect complexes lead to asymmetric;potentials at domain walls due to the interaction of the defect;polarization with the bulk polarization. The relative pinning;characteristics of different defects are then compared, to develop an;understanding of defect-domain-wall interactions in both doped and pure;PbTiO3. These results may also help in understanding hardening and;softening mechanisms in PZT.;Damjanovic, Dragan/A-8231-2008;Damjanovic, Dragan/0000-0002-9596-7438;3;1;0;0;3;1098-0121;WOS:000332161300002;;;J;Choi, Minseok;Janotti, Anderson;Van de Walle, Chris G.;Native point defects in LaAlO3: A hybrid functional study;PHYSICAL REVIEW B;88;21;214117;10.1103/PhysRevB.88.214117;DEC 30 2013;2013;We investigate the electronic structure of defects in LaAlO3 (LAO) and;their effects on electronic properties of bulk and heterostructures. Our;calculations indicate that vacancies have lower formation energies than;interstitials and antisites. The La vacancy (V-La) and the Al vacancy;(V-Al) are deep acceptors, while the oxygen vacancy (VO) is a deep;donor. The impact of these defects on the performance of;metal-oxide-semiconductor devices is analyzed by placing the LAO band;edges and defect levels with respect to the band edges of GaN, InGaAs,;and Si. V-O introduces levels in the gap or in the vicinity of the;semiconductor conduction band, resulting in carrier traps and/or leakage;current through the gate oxide, while V-La and V-Al are sources of;negative fixed charges. We also discuss how oxygen vacancies in LAO can;influence the observed two-dimensional electron gas (2DEG) in;LaAlO3/SrTiO3 heterostructures. We conclude that V-O in the LAO layer;may provide electrons that fill compensating surface states, resulting;in higher 2DEG densities, at least for modest LAO layer thicknesses.;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;4;0;0;0;4;1098-0121;WOS:000332161300003;;;J;Haham, Noam;Konczykowski, Marcin;Kuiper, Bouwe;Koster, Gertjan;Klein, Lior;Testing dependence of anomalous Hall effect on resistivity in SrRuO3 by;its increase with electron irradiation;PHYSICAL REVIEW B;88;21;214431;10.1103/PhysRevB.88.214431;DEC 30 2013;2013;We measure the anomalous Hall effect (AHE) in several patterns of the;itinerant ferromagnet SrRuO3 before and after the patterns are;irradiated with electrons. The irradiation increases the resistivity of;the patterns due to the introduction of point defects and we find that;the AHE coefficient R-s scales with the total resistivity before and;after irradiation which indicates that the AHE is determined by the;total resistivity. We discuss possible origins of slight deviations from;scaling that are observed at low temperature, particularly below 70 K.;0;0;0;0;0;1098-0121;WOS:000332161300006;;;J;Heinhold, R.;Williams, G. T.;Cooil, S. P.;Evans, D. A.;Allen, M. W.;Influence of polarity and hydroxyl termination on the band bending at;ZnO surfaces;PHYSICAL REVIEW B;88;23;235315;10.1103/PhysRevB.88.235315;DEC 30 2013;2013;Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and;real-time in situ XPS were used to study the thermal stability of the;hydroxyl termination and downward band bending on the polar surfaces of;ZnO single crystals. On the O-polar face, the position of the Fermi;level could be reversibly cycled between the conduction band and the;band gap over an energetic distance of approximately 0.8 eV (similar to;1/4 of the band gap) by controlling the surface H coverage using simple;ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with;H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike;transition in the electronic nature of the O-polar face was observed at;an H coverage of approximately 0.9 monolayers. For H coverage less than;this, semiconducting (depleted) O-polar surfaces were created that were;reasonably stable in UHV conditions. In contrast, the downward band;bending on the Zn-polar face was significantly more resilient, and;depleted surfaces could not be prepared by heat treatment alone.;3;0;0;0;3;1098-0121;WOS:000332163500005;;;J;Levy, Peter M.;Yang, Hongxin;Chshiev, Mairbek;Fert, Albert;Spin Hall effect induced by Bi impurities in Cu: Skew scattering and;side-jump;PHYSICAL REVIEW B;88;21;214432;10.1103/PhysRevB.88.214432;DEC 30 2013;2013;The spin Hall effect (SHE) has recently turned out to be an interesting;tool for the conversion between charge and spin currents, the conversion;factor being characterized by the spin Hall angle Phi(H). Large spin;Hall angles have been now measured in heavy metals like W(Phi(H) =;-0.33) and Cu doped with Bi impurities (Phi(H) = -0.24). In this article;we express the contributions to the SHE induced by skew scattering and;scattering with side-jump from Bi impurities in Cu, and we use ab initio;calculations of the electronic structure of CuBi alloys to estimate the;values of these two contributions. The predominant effect comes from;skew scattering; the spin Hall angle is negative in agreement with;experiments, but the calculated amplitude is smaller.;Chshiev, Mairbek/A-9742-2008; Yang, HongXin/H-5719-2012;Chshiev, Mairbek/0000-0001-9232-7622;;0;0;0;0;0;1098-0121;WOS:000332161300007;;;J;Lu, Wenlai;Yang, Ping;Song, Wen Dong;Chow, Gan Moog;Chen, Jing Sheng;Control of oxygen octahedral rotations and physical properties in SrRuO3;films;PHYSICAL REVIEW B;88;21;214115;10.1103/PhysRevB.88.214115;DEC 30 2013;2013;Control of octahedral rotations in the ABO(3) perovskite oxides has been;of great interest due to its potential in rationally discovering and;designing new multifunctional phases. In this study, we show that;octahedral rotations of the SrRuO3 films can be controlled by oxygen;vacancies as well as by interfacial coupling, which further determines;the physical properties. Half-integer reflections using high-resolution;synchrotron x-ray diffraction were carried out to determine the;octahedral rotation pattern of SrRuO3 films on SrTiO3 substrates. The;transition of RuO6 rotation pattern accompanied by the structural change;from monoclinic P2(1)/m to tetragonal F4/mmc can be understood from the;preference of oxygen vacancies in the SrO atomic plane and the coupling;of octahedra across the interface between film and substrate. The field;angle dependence of magnetoresistance further confirmed the structural;phase transition with changes in octahedral rotations. The monoclinic;phase has the uniaxial magnetic easy axis 30 away from the [001];direction towards the [010] direction while the tetragonal phase has;uniaxial magnetic easy axis along the fourfold axis which is;perpendicular to the film surface. This study demonstrates the ability;to control the octahedral rotations in perovskite films and its;importance when designing thin films and multilayers with desired;functional property.;Chen, Jingsheng/D-9107-2011; Yang, Ping/C-5612-2008;1;0;0;0;1;1098-0121;WOS:000332161300001;;;J;Marcano, N.;Algarabel, P. A.;Rodriguez Fernandez, J.;Magen, C.;Morellon, L.;Singh, Niraj K.;Gschneidner, K. A., Jr.;Pecharsky, V. K.;Ibarra, M. R.;Effects of pressure on the magnetic-structural and Griffiths-like;transitions in Dy5Si3Ge;PHYSICAL REVIEW B;88;21;214429;10.1103/PhysRevB.88.214429;DEC 30 2013;2013;Magnetization studies have been performed on a polycrystalline sample of;Dy5Si3Ge as a function of an applied magnetic field (up to 50 kOe) and;hydrostatic pressure (up to 10 kbar) in the 5-300 K temperature range.;The anomalous behavior of the magnetic susceptibility indicates that a;Griffiths-like phase exists at low magnetic fields and pressures up to;10 kbar. We present evidence that the high-temperature second-order;ferromagnetic transition can be coupled with the low-temperature;first-order crystallographic transformation into a single first-order;magnetic-crystallographic transformation using a magnetic field and;hydrostatic pressure as tuning parameters. The effect of pressure on the;Griffiths-like phase is reported and analyzed in the framework of the;complex competition between the interslab and intraslab magnetic;interactions.;Magen, Cesar/A-2825-2013; Morellon, Luis/K-6922-2014; Marcano Aguado, Noelia/F-9446-2010;
12:115:11 High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN
DOI:10.1063/1.3660692 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Donmez, O.;Gunes, M.;Erol, A.;Arikan, M. C.;Balkan, N.;
12:115:12 Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs
DOI:10.1063/1.3448025 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Caetano, Clovis;Teles, Lara Kuehl;Marques, Marcelo;Ferreira, Luiz G.;
12:115:13 Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD
DOI:10.1016/j.jmmm.2012.03.039 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:3 AU: Souissi, M.;Schmerber, G.;Derory, A.;El Jani, B.;
12:116:1 Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)
DOI:10.1063/1.3663216 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Sanchez, F.;Bachelet, R.;de Coux, P.;Warot-Fonrose, B.;Skumryev, V.;Tarnawska, L.;Zaumseil, P.;Schroeder, T.;Fontcuberta, J.;
12:116:2 Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)
DOI:10.1063/1.3485830 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:20 AU: Tarnawska, L.;Giussani, A.;Zaumseil, P.;Schubert, M. A.;Paszkiewicz, R.;Brandt, O.;Storck, P.;Schroeder, T.;
12:116:3 Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors
DOI:10.1063/1.4861000 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Szyszka, A.;Lupina, L.;Lupina, G.;Mazur, M.;Schubert, M. A.;Storck, P.;Thapa, S. B.;Schroeder, T.;
12:116:4 Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)
DOI:10.1063/1.3699201 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Tarnawska, L.;Zaumseil, P.;Schubert, M. A.;Okur, S.;Ozgur, U.;Morkoc, H.;Paszkiewicz, R.;Storck, P.;Schroeder, T.;
12:116:5 Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts
DOI:10.1063/1.4894251 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Szyszka, A.;Lupina, L.;Lupina, G.;Schubert, M. A.;Zaumseil, P.;Haeberlen, M.;Storck, P.;Thapa, S. B.;Schroeder, T.;
12:116:6 X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)
DOI:10.1063/1.4788982 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Niu, G.;Zoellner, M. H.;Zaumseil, P.;Pouliopoulos, A.;d'Acapito, F.;Schroeder, T.;Boscherini, F.;
12:116:7 Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology
DOI:10.1116/1.4882173 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Dargis, Rytis;Clark, Andrew;Arkun, Fevzi Erdem;Grinys, Tomas;Tomasiunas, Rolandas;O'Hara, Andy;Demkov, Alexander A.;
12:116:8 Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory
DOI:10.1063/1.4807907 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Tarnawska, L.;Dabrowski, J.;Grzela, T.;Lehmann, M.;Niermann, T.;Paszkiewicz, R.;Storck, P.;Schroeder, T.;
12:116:9 Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
DOI:10.1016/j.tsf.2009.09.139 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Fissel, A.;Dargis, R.;Bugiel, E.;Schwendt, D.;Wietler, T.;Kruegener, J.;Laha, A.;Osten, H. J.;
12:116:10 Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): Transmission electron microscopy characterization of growth defects
DOI:10.1063/1.4809561 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Niermann, T.;Zengler, D.;Tarnawska, L.;Stork, P.;Schroeder, T.;Lehmann, M.;
12:116:11 Lattice-matched epitaxial ternary PrxY2-xO3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring
DOI:10.1063/1.4772939 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Niu, G.;Zaumseil, P.;Schubert, M. A.;Zoellner, M. H.;Dabrowski, J.;Schroeder, T.;
12:116:12 Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
DOI:10.1016/j.jcrysgro.2012.09.061 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Moudakir, T.;Gautier, S.;Suresh, S.;Abid, M.;El Gmili, Y.;Patriarche, G.;Pantzas, K.;Troadec, D.;Jacquet, J.;Genty, F.;Voss, P.;Ougazzaden, A.;
12:116:13 Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)
DOI:10.1063/1.4768295 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Sitaputra, W.;Tsu, R.;
12:116:14 Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory
DOI:10.1063/1.3486217 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Seifarth, O.;Dietrich, B.;Zaumseil, P.;Giussani, A.;Storck, P.;Schroeder, T.;
12:116:15 Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure
DOI:10.1116/1.4793264 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Sitaputra, Wattaka;Tsu, Raphael;
12:116:16 Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures
DOI:10.1116/1.4862951 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Dargis, Rytis;Leathersich, Jeffrey;Clark, Andrew;Arkun, Erdem;
12:116:17 Accommodation at the interface of highly dissimilar GaN(0001)/Sc2O3(111) heteroepitaxial systems
DOI:10.1016/j.scriptamat.2012.10.029 JN:SCRIPTA MATERIALIA PY:2013
TC:0 AU: Liu, Po-Liang;Liao, Kuo-Cheng;
12:116:18 Single crystalline Pr2-xYxO3 (x=0-2) dielectrics on Si with tailored electronic and crystallographic structure
DOI:10.1063/1.3511751 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Seifarth, O.;Schubert, M. A.;Giussani, A.;Klenov, D. O.;Schmeisser, D.;Schroeder, T.;
12:116:19 Epitaxial growth of Dy(2)O(3) films on SrTiO(3)(001) substrates by molecular beam epitaxy
DOI:10.1116/1.3521482 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Bhuiyan, Md. Nurul Kabir;Menghini, Mariela;Locquet, Jean-Pierre;Seo, Jin Won;Dieker, Christel;Jaeger, Wolfgang;Marchiori, Chiara;
12:116:20 Structural, electronic and energetic properties of GaN[0001]/Ga2O3[100] heterojunctions: A first-principles density functional theory study
DOI:10.1016/j.scriptamat.2011.05.028 JN:SCRIPTA MATERIALIA PY:2011
TC:2 AU: Liu, Po-Liang;Siao, Yu-Jin;Wu, Yen-Ting;Wang, Chih-Hao;Chen, Chien-Shun;
12:117:1 Hot carrier solar cells: Achievable efficiency accounting for heat losses in the absorber and through contacts
DOI:10.1063/1.3489405 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Le Bris, A.;Guillemoles, J. -F.;
12:117:2 Investigation of theoretical efficiency limit of hot carriers solar cells with a bulk indium nitride absorber
DOI:10.1063/1.3494047 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:25 AU: Aliberti, P.;Feng, Y.;Takeda, Y.;Shrestha, S. K.;Green, M. A.;Conibeer, G.;
12:117:3 Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber
DOI:10.1063/1.3680594 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Feng, Y.;Aliberti, P.;Veettil, B. P.;Patterson, R.;Shrestha, S.;Green, M. A.;Conibeer, G.;
12:117:4 Highly efficient solar cells using hot carriers generated by two-step excitation
DOI:10.1016/j.solmat.2011.05.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:10 AU: Takeda, Yasuhiko;Motohiro, Tomoyoshi;
12:117:5 Effects of non-ideal energy selective contacts and experimental carrier cooling rate on the performance of an indium nitride based hot carrier solar cell
DOI:10.1063/1.3663862 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Aliberti, P.;Feng, Y.;Shrestha, S. K.;Green, M. A.;Conibeer, G.;Tu, L. W.;Tseng, P. H.;Clady, R.;
12:117:6 Carrier multiplication in bulk indium nitride
DOI:10.1063/1.4766738 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Jensen, S. A.;Versluis, J.;Canovas, E.;Pijpers, J. J. H.;Sellers, I. R.;Bonn, M.;
12:117:7 Technology-compatible hot carrier solar cell with energy selective hot carrier absorber and carrier-selective contacts
DOI:10.1063/1.4757979 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Koenig, D.;Takeda, Y.;Puthen-Veettil, B.;
12:117:8 Photovoltaic response in a resonant tunneling wire-dot-wire junction
DOI:10.1063/1.4816593 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Berbezier, Aude;Autran, Jean-Luc;Michelini, Fabienne;
12:117:9 Phonon lifetime in SiSn and its suitability for hot-carrier solar cells
DOI:10.1063/1.4881938 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Levard, Hugo;Laribi, Sana;Guillemoles, Jean-Francois;
12:117:10 Electron-phonon energy transfer in hot-carrier solar cells
DOI:10.1016/j.solmat.2009.10.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:20 AU: Luque, Antonio;Marti, Antonio;
12:117:11 Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell
DOI:10.1063/1.4883648 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Hirst, L. C.;Walters, R. J.;Fuehrer, M. F.;Ekins-Daukes, N. J.;
12:117:12 The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si
DOI:10.1016/j.tsf.2013.04.073 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Seo, Hyunwoong;Wang, Yuting;Sato, Muneharu;Uchida, Giichiro;Koga, Kazunori;Itagaki, Naho;Kamataki, Kunihiro;Shiratani, Masaharu;
12:117:13 Phonon lifetimes in model quantum dot superlattice systems with applications to the hot carrier solar cell
DOI:10.1016/j.solmat.2010.06.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:18 AU: Patterson, R.;Kirkengen, M.;Veettil, B. Puthen;Konig, D.;Green, M. A.;Conibeer, G.;
12:117:14 A hot-carrier solar cell with optical energy selective contacts
DOI:10.1063/1.3636401 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Farrell, D. J.;Takeda, Y.;Nishikawa, K.;Nagashima, T.;Motohiro, T.;Ekins-Daukes, N. J.;
12:117:15 Effect of static carrier screening on the energy relaxation of electrons in polar-semiconductor multiple-quantum-well superlattices
DOI:10.1063/1.4774327 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Feng, Y.;Lin, S.;Green, M.;Conibeer, G.;
12:117:16 Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications
DOI:10.1016/j.solmat.2010.06.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:8 AU: Aliberti, P.;Shrestha, S. K.;Teuscher, R.;Zhang, B.;Green, M. A.;Conibeer, G. J.;
12:117:17 Investigation of carrier-carrier scattering effect on the performance of hot carrier solar cells with relaxation time approximation
DOI:10.1063/1.4811263 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Feng, Y.;Patterson, R.;Lin, S.;Shrestha, S.;Huang, S.;Green, M.;Conibeer, G.;
12:117:18 In-situ high resolution transmission electron microscopy observation of silicon nanocrystal nucleation in a SiO2 bilayered matrix
DOI:10.1063/1.4892658 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yang, T. C. -J.;Kauffmann, Y.;Wu, L.;Lin, Z.;Jia, X.;Puthen-Veettil, B.;Zhang, T.;Conibeer, G.;Perez-Wurfl, I.;Rothschild, A.;
12:117:19 Nonequilibrium optical phonon effect on high-field electron transport in InN
DOI:10.1063/1.4764058 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Reklaitis, Antanas;
12:117:20 Energy selective contacts for hot carrier solar cells
DOI:10.1016/j.solmat.2009.11.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:9 AU: Shrestha, Santosh K.;Aliberti, Pasquale;Conibeer, Gavin J.;
12:117:21 Investigation of boron antimonide as hot carrier absorber material
DOI:10.1016/j.solmat.2012.12.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:10 AU: Yao, Yao;Koenig, Dirk;Green, Martin;
12:117:22 The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures
DOI:10.1063/1.4899207 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Puthen-Veettil, B.;Patterson, R.;Koenig, D.;Conibeer, G.;Green, M. A.;
12:118:1 Attraction of semiconductor nanowires: An in situ observation
DOI:10.1016/j.actamat.2013.08.020 JN:ACTA MATERIALIA PY:2013
TC:2 AU: Chen, Bin;Gao, Qiang;Chang, Li;Wang, Yanbo;Chen, Zibin;Liao, Xiaozhou;Tan, Hark Hoe;Zou, Jin;Ringer, Simon P.;Jagadish, Chennupati;
12:118:2 Deformation-induced phase transformation in 4H-SiC nanopillars
DOI:10.1016/j.actamat.2014.07.055 JN:ACTA MATERIALIA PY:2014
TC:1 AU: Chen, Bin;Wang, Jun;Zhu, Yiwei;Liao, Xiaozhou;Lu, Chunsheng;Mai, Yiu-Wing;Ringer, Simon P.;Ke, Fujiu;Shen, Yaogen;
12:118:3 Surface defects and accompanying imperfections in 4H-SiC: Optical, structural and electrical characterization
DOI:10.1016/j.actamat.2011.09.010 JN:ACTA MATERIALIA PY:2012
TC:19 AU: Chen, Bin;Matsuhata, Hirofumi;Sekiguchi, Takashi;Ichinoseki, Kyouichi;Okumura, Hajime;
12:118:4 Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
DOI:10.1063/1.3700963 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Chen, Bin;Matsuhata, Hirofumi;Sekiguchi, Takashi;Kinoshita, Akimasa;Ichinoseki, Kyouichi;Okumura, Hajime;
12:118:5 In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC
DOI:10.1063/1.4891834 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Bin;Chen, Jun;Yao, Yuanzhao;Sekiguchi, Takashi;Matsuhata, Hirofumi;Okumura, Hajime;
12:118:6 Evidence for a general mechanism modulating carrier lifetime in SiC
DOI:10.1103/PhysRevB.81.233203 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Chen, Bin;Sekiguchi, Takashi;Ohyanagi, Takasumi;Matsuhata, Hirofumi;Kinoshita, Akimasa;Okumura, Hajime;
12:118:7 Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH1 complex
DOI:10.1063/1.3442907 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Chen, Bin;Matsuhata, Hirofumi;Sekiguchi, Takashi;Ohyanagi, Takasumi;Kinoshita, Akimasa;Okumura, Hajime;
12:118:8 Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films
DOI:10.1063/1.3691595 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Chen, Bin;Matsuhata, Hirofumi;Kumagai, Kazuhiro;Sekiguchi, Takashi;Ichinoseki, Kyouichi;Okumura, Hajime;
12:118:9 Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices
DOI:10.1007/s11664-010-1168-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:7 AU: Chen, Bin;Chen, Jun;Sekiguchi, Takashi;Ohyanagi, Takasumi;Matsuhata, Hirofumi;Kinoshita, Akimasa;Okumura, Hajime;
12:118:10 Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain
DOI:10.1063/1.4818306 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Yakimov, E. B.;Regula, G.;Pichaud, B.;
12:118:11 Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg-Barrett X-ray topography
DOI:10.1080/14786435.2014.894646 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Matsuhata, Hirofumi;Yamaguchi, Hirotaka;Yamashita, Tamotsu;Tanaka, Toshiaki;Chen, Bin;Sekiguchi, Takashi;
12:118:12 Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy
DOI:10.1016/j.jcrysgro.2015.01.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yamashita, T.;Matsuhata, H.;Sekiguchi, T.;Momose, K.;Osawa, H.;Kitabatake, M.;
12:118:13 Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals
DOI:10.1007/s00339-014-8594-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wang, Bo;Peng, Tonghua;Liang, Jingkui;Wang, Gang;Wang, Wenjun;Zhao, Huaizhou;Chen, Xiaolong;
12:118:14 Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers
DOI:10.1063/1.3499431 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Kamata, Isaho;Zhang, Xuan;Tsuchida, Hidekazu;
12:118:15 Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry
DOI:10.1080/14786435.2012.716168 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:3 AU: Matsuhata, Hirofumi;Yamaguchi, Hirotaka;Ohno, Toshiyuki;
12:118:16 Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity
DOI:10.1080/14786435.2012.745018 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:2 AU: Regula, Gabrielle;Lancin, Maryse;Pichaud, Bernard;Neisius, Thomas;Daineche, Rachid;Juillaguet, Sandrine;
12:119:1 Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors
DOI:10.1021/nl1006432 JN:NANO LETTERS PY:2010
TC:54 AU: Zhang, Arthur;Kim, Hongkwon;Cheng, James;Lo, Yu-Hwa;
12:119:2 TiO2 nanoparticles and silicon nanowires hybrid device: Role of interface on electrical, dielectric, and photodetection properties
DOI:10.1063/1.4772068 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Rasool, Kamran;Rafiq, M. A.;Ahmad, Mushtaq;Imran, Z.;Hasan, M. M.;
12:119:3 Photoresponsive properties of ultrathin silicon nanowires
DOI:10.1063/1.4904089 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tran, Duy P.;Macdonald, Thomas J.;Wolfrum, Bernhard;Stockmann, Regina;Nann, Thomas;Offenhaeusser, Andreas;Thierry, Benjamin;
12:119:4 The role of surface states in modification of carrier transport in silicon nanowires
DOI:10.1063/1.4805031 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Rasool, Kamran;Rafiq, M. A.;Ahmad, Mushtaq;Imran, Zahid;Hasan, M. M.;
12:119:5 Enhanced electrical and dielectric properties of polymer covered silicon nanowire arrays
DOI:10.1063/1.4735278 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Rasool, Kamran;Rafiq, M. A.;Li, C. B.;Krali, E.;Durrani, Z. A. K.;Hasan, M. M.;
12:119:6 Fabrication of cadmium titanate nanofibers via electrospinning technique
DOI:10.1016/j.ceramint.2011.12.046 JN:CERAMICS INTERNATIONAL PY:2012
TC:7 AU: Imran, Z.;Batool, S. S.;Israr, M. Q.;Sadaf, J. R.;Usman, M.;Jamil, H.;Javed, M. Y.;Rafiq, M. A.;Hasan, M. M.;Nur, O.;Willander, M.;
12:119:7 Dielectric and transport properties of bismuth sulfide prepared by solid state reaction method
DOI:10.1063/1.4781004 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Ahmad, Mushtaq;Rafiq, M. A.;Rasool, Kamran;Imran, Zahid;Hasan, M. M.;
12:119:8 Giant persistent photoconductivity in BaTiO3/TiO2 heterostructures
DOI:10.1063/1.4897999 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Plodinec, Milivoj;Santic, Ana;Zavasnik, Janez;Ceh, Miran;Gajovic, Andreja;
12:119:9 Fabrication of locally thinned down silicon nanowires
DOI:10.1039/c4tc00046c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Duy Phu Tran;Wolfrum, Bernhard;Stockmann, Regina;Offenhaeusser, Andreas;Thierry, Benjamin;
12:119:10 Bias Dependence of Sub-Bandgap Light Detection for Core-Shell Silicon Nanowires
DOI:10.1021/nl3033558 JN:NANO LETTERS PY:2012
TC:7 AU: Zhou, Yuchun;Liu, Yu-hsin;Cheng, James;Lo, Yu-Hwa;
12:119:11 Charge carrier transport mechanisms in perovskite CdTiO3 fibers
DOI:10.1063/1.4885462 JN:AIP ADVANCES PY:2014
TC:2 AU: Imran, Z.;Rafiq, M. A.;Hasan, M. M.;
12:119:12 High efficiency silicon 1310 nm detector without defect states or heteroepitaxy
DOI:10.1063/1.4816430 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Liu, Yu-Hsin;Zhou, Yuchun;Lo, Yu-Hwa;
12:119:13 Nanobridge gate-all-around phototransistors for electro-optical OR gate circuit and frequency doubler applications
DOI:10.1063/1.4862328 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Oh, Jin Yong;Islam, M. Saif;
12:119:14 Analysis of surface states in ZnO nanowire field effect transistors
DOI:10.1016/j.apsusc.2014.02.137 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Shao, Ye;Yoon, Jongwon;Kim, Hyeongnam;Lee, Takhee;Lu, Wu;
12:119:15 Energetic instability of polygonal micro- and nanowires
DOI:10.1063/1.4717709 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Wong, Harris;
12:119:16 Photodetection and transport properties of surface capped silicon nanowires arrays with polyacrylic acid
DOI:10.1063/1.4818483 JN:AIP ADVANCES PY:2013
TC:3 AU: Rasool, Kamran;Rafiq, M. A.;Ahmad, Mushtaq;Imran, Z.;Batool, S. S.;Hasan, M. M.;
12:119:17 Temperature dependent transport and dielectric properties of cadmium titanate nanofiber mats
DOI:10.1063/1.4799756 JN:AIP ADVANCES PY:2013
TC:0 AU: Imran, Z.;Rafiq, M. A.;Ahmad, M.;Rasool, K.;Batool, S. S.;Hasan, M. M.;
12:119:18 Synthesis and Characterization of Nano-Barium Titanate Prepared by Hydrothermal Process
DOI:10.1080/10584587.2010.496614 JN:INTEGRATED FERROELECTRICS PY:2010
TC:3 AU: Joshi, N. J.;Grewal, G. S.;Shrinet, V.;Pratap, A.;Buch, N. J.;
12:119:19 Reverse-loop impedance profile in Bi2S3 quantum dots
DOI:10.1016/j.matchemphys.2010.01.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:4 AU: Abuthahir, K. A. Z. Syed;Jagannathan, R.;
12:120:1 Control growth of silicon nanocolumns' epitaxy on silicon nanowires
DOI:10.1007/s11051-013-1571-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:4 AU: Chong, Su Kong;Dee, Chang Fu;Yahya, Noorhana;Rahman, Saadah Abdul;
12:120:2 Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique
DOI:10.1016/j.matchemphys.2012.05.037 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:12 AU: Chong, Su Kong;Goh, Boon Tong;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:3 Growth and structural property studies on NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition
DOI:10.1016/j.tsf.2014.03.030 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Nazarudin, Nur Fatin Farhanah Binti;Azizan, Siti Nur Azieani Binti;Rahman, Saadah Abdul;Goh, Boon Tong;
12:120:4 Synthesis of nickel catalyzed Si/SiC core-shell nanowires by HWCVD
DOI:10.1016/j.jcrysgro.2014.09.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Goh, Boon Tong;Rahman, Saadah Abdul;
12:120:5 Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition
DOI:10.1016/j.tsf.2011.06.042 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Chong, Su Kong;Goh, Boon Tong;Aspanut, Zarina;Muhamad, Muhamad Rasat;Varghese, Binni;Sow, Chorng Haur;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:6 Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition
DOI:10.1016/j.matlet.2011.04.100 JN:MATERIALS LETTERS PY:2011
TC:13 AU: Chong, Su Kong;Goh, Boon Tong;Aspanut, Zarina;Muhamad, Muhamad Rasat;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:7 Study of the growth, and effects of filament to substrate distance on the structural and optical properties of Si/SiC core-shell nanowires synthesized by hot-wire chemical vapor deposition
DOI:10.1016/j.matchemphys.2014.06.045 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:4 AU: Goh, Boon Tong;Rahman, Saadah Abdul;
12:120:8 Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique
DOI:10.1016/j.tsf.2011.01.056 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Chong, Su Kong;Goh, Boon Tong;Aspanut, Zarina;Muhamad, Muhamad Rasat;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:9 Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
DOI:10.1016/j.tsf.2012.07.098 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Chong, Su Kong;Goh, Boon Tong;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:10 Opportunities for new materials synthesis by hot wire chemical vapor process
DOI:10.1016/j.tsf.2011.01.315 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Dusane, R. O.;
12:120:11 Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition
DOI:10.1016/j.tsf.2011.01.304 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Meshram, Nagsen P.;Kumbhar, Alka;Dusane, R. O.;
12:120:12 Nanoscale integration of SiC/SiO2 core-shell nanocables in diamond through a simultaneous hybrid structure fabrication
DOI:10.1063/1.4712044 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Zhuang, Hao;Zhang, Lei;Staedler, Thorsten;Jiang, Xin;
12:120:13 Formation of alpha-Si1-xCx:H and nc-SiC films grown by HWCVD under different process pressure
DOI:10.1016/j.apsusc.2011.06.165 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Wu, Tianru;Shen, Honglie;Cheng, Bin;Pan, Yuanyuan;Liu, Bing;Shen, Jiancang;
12:120:14 Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)
DOI:10.1016/j.apsusc.2010.11.012 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Chong, Su Kong;Goh, Boon Tong;Aspanut, Zarina;Muhamad, Rasat Muhamad;Dee, Chang Fu;Rahman, Saadah Abdul;
12:120:15 Synthesis of silicon nanowires using tin catalyst by hot wire chemical vapor processing
DOI:10.1016/j.materresbull.2013.02.012 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Meshram, Nagsen;Kumbhar, Alka;Dusane, R. O.;
12:120:16 Hot wire chemical vapour deposition (HWCVD) of boron carbide thin films from ortho-carborane for neutron detection application
DOI:10.1016/j.tsf.2011.01.295 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Chaudhari, Pradip;Meshram, Nagsen;Singh, Arvind;Topkar, Anita;Dusane, Rajiv;
12:120:17 Effects of gas pressure and plasma power on the growth of carbon nanostructures
DOI:10.1016/j.apsusc.2009.09.034 JN:APPLIED SURFACE SCIENCE PY:2010
TC:1 AU: Liu, Y. X.;Liu, J. H.;Zhu, C. C.;Liu, W. H.;
12:120:18 Highly selective diamond and beta-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/beta-SiC composite film
DOI:10.1016/j.scriptamat.2011.06.023 JN:SCRIPTA MATERIALIA PY:2011
TC:12 AU: Zhuang, Hao;Zhang, Lei;Staedler, Thorsten;Jiang, Xin;
12:120:19 Structural and optical properties of silicon thin-films deposited by hot-wire chemical vapor deposition: The effects of silane concentrations
DOI:10.1016/j.tsf.2013.06.098 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Panchal, A. K.;Beladiya, Vivek;Kheraj, Vipul;
12:121:1 High performance room temperature GaN-nanowires hydrogen gas sensor fabricated by chemical vapor deposition (CVD) technique
DOI:10.1016/j.ijhydene.2013.08.014 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:9 AU: Abdullah, Q. N.;Yam, F. K.;Hassan, J. J.;Chin, C. W.;Hassan, Z.;Bououdina, M.;
12:121:2 One-dimensional GaN nanostnictures prepared via chemical vapor deposition: Substrate induced size and dimensionality
DOI:10.1016/j.ceramint.2014.02.031 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Abdullah, Q. N.;Yam, F. K.;Hassan, N. K.;Qeed, M. A.;Al-Heuseen, K.;Bououdina, M.;Hassan, Z.;
12:121:3 Room temperature H-2 sensing using functionalized GaN nanotubes with ultra low activation energy
DOI:10.1016/j.ijhydene.2012.12.131 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:15 AU: Sahoo, Prasana;Dhara, S.;Dash, S.;Amirthapandian, S.;Prasad, Arun K.;Tyagi, A. K.;
12:121:4 Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl-2 plasma surface treatments
DOI:10.1016/j.matchemphys.2012.04.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Chen, Tai-You;Chen, Huey-Ing;Chiu, Po-Shun;Huang, Chien-Chang;Hsu, Chi-Shiang;Chou, Po-Cheng;Liu, Rong-Chau;Liu, Wen-Chau;
12:121:5 SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications
DOI:10.1016/j.ijhydene.2012.03.124 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:20 AU: Hung, Shao-Tsu;Chang, Chi-Jung;Hsu, Chien-Hsing;Chu, Byung Hwan;Lo, Chien Fong;Hsu, Chin-Ching;Pearton, Stephen J.;Holzworth, Monta Raymond;Whiting, Patrick Guzek;Rudawski, Nicholas Guy;Jones, Kevin S.;Dabiran, Amir;Chow, Peter;Ren, Fan;
12:121:6 Increasing Surface Area of Silica Nanoparticles With a Rough Surface
DOI:10.1021/am200052a JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:11 AU: Xu, Shuping;Hartvickson, Shay;Zhao, Julia Xiaojun;
12:121:7 Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111)
DOI:10.1016/j.apsusc.2010.07.073 JN:APPLIED SURFACE SCIENCE PY:2010
TC:14 AU: Xiong, Jijun;Tang, Jianjun;Liang, Ting;Wang, Yong;Xue, Chenyang;Shi, Weili;Zhang, Wendong;
12:121:8 Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
DOI:10.1116/1.4798612 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Xi, Yuyin;Liu, Lu;Hwang, Ya-Hsi;Phillips, Oluwadamilola;Ren, Fan;Pearton, Stephen J.;Kim, Jihyun;Hsu, Chien-Hsing;Lo, Chien-Fong;Johnson, Jerry Wayne;
12:121:9 Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors
DOI:10.1063/1.3454279 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Lo, C. F.;Chang, C. Y.;Chu, B. H.;Pearton, S. J.;Dabiran, A.;Chow, P. P.;Ren, F.;
12:121:10 The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
DOI:10.1016/j.apsusc.2011.04.082 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Tang, Jianjun;Liang, Ting;Shi, Weili;Zhang, Qianqian;Wang, Yong;Liu, Jun;Xiong, Jijun;
12:121:11 Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes
DOI:10.1016/j.ijhydene.2014.10.022 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:0 AU: Chou, Po-Cheng;Chen, Huey-Ing;Liu, I. -Ping;Chen, Chun-Chia;Liou, Jian-Kai;Lai, Cheng-Jing;Liu, Wen-Chau;
12:121:12 Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells
DOI:10.1116/1.4855057 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Chen, Gang;Choi, Anthony Hoi Wai;Lai, Pui To;Tang, Wing Man;
12:121:13 MOS hydrogen sensor with very fast response based on ulitra-thin thermal SiO2 film
DOI:10.1016/j.ijhydene.2010.08.031 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2010
TC:6 AU: Lu, Chi;Chen, Zhi;
12:121:14 Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor
DOI:10.1016/j.ijhydene.2010.01.058 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2010
TC:8 AU: Tsai, Tsung-Han;Chen, Huey-Ing;Chen, Tai-Yu;Chen, Li-Yang;Liu, Yi-Jung;Huang, Chien-Chang;Hsu, Kai-Siang;Liu, Wen-Chau;
12:121:15 Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H-2 gas sensing
DOI:10.1016/j.ijhydene.2014.04.155 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:7 AU: Liu, Y.;Yu, J.;Lai, P. T.;
12:121:16 On the voltage dependence of sensitivity for Schottky-type gas sensor
DOI:10.1063/1.4903231 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, Y.;Yu, J.;Tang, W. M.;Lai, P. T.;
12:121:17 Hydrogen sensing characteristics of semipolar (11(2)over-bar2)GaN Schottky diodes
DOI:10.1063/1.4866010 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Baik, Kwang Hyeon;Kim, Hyonwoong;Lee, Sung-Nam;Lim, Eunju;Pearton, S. J.;Ren, F.;Jang, Soohwan;
12:121:18 The influence of growth temperatures on the characteristics of GaN nanowires
DOI:10.1016/j.apsusc.2011.08.071 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Low, L. L.;Yam, F. K.;Beh, K. P.;Hassan, Z.;
12:121:19 Tensile strain engineering of Si thin films using porous Si substrates
DOI:10.1016/j.tsf.2009.09.161 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Boucherif, A.;Blanchard, N. P.;Regreny, P.;Marty, O.;Guillot, G.;Grenet, G.;Lysenko, V.;
12:122:1 Increased Color-Conversion Efficiency in Hybrid Light-Emitting Diodes utilizing Non-Radiative Energy Transfer
DOI:10.1002/adma.200902262 JN:ADVANCED MATERIALS PY:2010
TC:46 AU: Chanyawadee, Soontorn;Lagoudakis, Pavlos G.;Harley, Richard T.;Charlton, Martin D. B.;Talapin, Dmitri V.;Huang, Hong Wen;Lin, Chung-Hsiang;
12:122:2 The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals
DOI:10.1002/adfm.201200351 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:8 AU: Jiang, Bin;Zhang, Chunfeng;Wang, Xiaoyong;Park, Min Joo;Kwak, Joon Seop;Xu, Jian;Zhang, Huichao;Zhang, Jiayu;Xue, Fei;Xiao, Min;
12:122:3 Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene
DOI:10.1021/nl503624j JN:NANO LETTERS PY:2015
TC:0 AU: Yu, Young-Jun;Kim, Keun Soo;Nam, Jungtae;Kwon, Se Ra;Byun, Hyeryoung;Lee, Kwanjae;Ryou, Jae-Hyun;Dupuis, Russell D.;Kim, Jeomoh;Ahn, Gwanghyun;Ryu, Sunmin;Ryu, Mee-Yi;Kim, Jin Soo;
12:122:4 Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters
DOI:10.1021/nl400597d JN:NANO LETTERS PY:2013
TC:17 AU: Smith, R.;Liu, B.;Bai, J.;Wang, T.;
12:122:5 Carrier recombination dynamics in InxGa1-xN/GaN multiple quantum wells
DOI:10.1103/PhysRevB.82.085305 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Brosseau, Colin-N;Perrin, Mathieu;Silva, Carlos;Leonelli, Richard;
12:122:6 Energy coupling processes in InGaN/GaN nanopillar light emitting diodes embedded with Ag and Ag/SiO2 nanoparticles
DOI:10.1039/c2jm33759b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:5 AU: Jang, Lee-Woon;Jeon, Dae-Woo;Sahoo, Trilochan;Polyakov, Alexander Y.;Saravanakumar, Balasubramaniam;Yu, Yeon-Tae;Cho, Yong-Hoon;Yang, Jin-Kyu;Lee, In-Hwan;
12:122:7 Dependence of Resonance Energy Transfer on Exciton Dimensionality
DOI:10.1103/PhysRevLett.107.236805 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:8 AU: Rindermann, Jan Junis;Pozina, Galia;Monemar, Bo;Hultman, Lars;Amano, Hiroshi;Lagoudakis, Pavlos G.;
12:122:8 Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals
DOI:10.1063/1.3562035 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Nizamoglu, Sedat;Guzelturk, Burak;Jeon, Dae-Woo;Lee, In-Hwan;Demir, Hilmi Volkan;
12:122:9 Surface potential effect on excitons in AlGaN/GaN quantum well structures
DOI:10.1063/1.4793568 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Pozina, G.;Hemmingsson, C.;Amano, H.;Monemar, B.;
12:122:10 Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films
DOI:10.1063/1.4901024 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Smith, R. M.;Liu, B.;Bai, J.;Wang, T.;
12:122:11 In-situ electrical characterisation of a photodiode during nano-structuring with a focussed ion beam
DOI:10.1007/s00339-012-7199-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Rindermann, Jan Junis;Henini, Mohammed;Lagoudakis, Pavlos G.;
12:122:12 Hybrid organic/GaN photonic crystal light-emitting diode
DOI:10.1063/1.4757870 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Herrnsdorf, J.;Guilhabert, B.;McKendry, J. J. D.;Gong, Z.;Massoubre, D.;Zhang, S.;Watson, S.;Kelly, A. E.;Gu, E.;Laurand, N.;Dawson, M. D.;
12:122:13 Observation of lattice thermal waves interference by photoluminescence blinking of InGaN quantum well devices
DOI:10.1063/1.4826088 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Micheletto, R.;Oikawa, K.;Feldmeier, C.;
12:122:14 Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes
DOI:10.1007/s11664-013-2547-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Liu, Jie;Zhang, Fan;You, Guanjun;Zhang, Yu;Wei, Lai;Zhao, Feng;Wang, Yongqiang;Henderson, Ron;Xu, Jian;
12:123:1 High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
DOI:10.1063/1.3575573 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Bruckbauer, Jochen;Edwards, Paul R.;Wang, Tao;Martin, Robert W.;
12:123:2 Phase separation in thick InGaN layers - A quantitative, nanoscale study by pulsed laser atom probe tomography
DOI:10.1016/j.actamat.2012.04.030 JN:ACTA MATERIALIA PY:2012
TC:10 AU: Mueller, M.;Smith, G. D. W.;Gault, B.;Grovenor, C. R. M.;
12:123:3 Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
DOI:10.1063/1.4768291 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Massabuau, F. C. -P.;Sahonta, S. -L.;Trinh-Xuan, L.;Rhode, S.;Puchtler, T. J.;Kappers, M. J.;Humphreys, C. J.;Oliver, R. A.;
12:123:4 Structure and strain relaxation effects of defects in InxGa1-xN epilayers
DOI:10.1063/1.4894688 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Rhode, S. L.;Fu, W. Y.;Moram, M. A.;Massabuau, F. C. -P.;Kappers, M. J.;McAleese, C.;Oehler, F.;Humphreys, C. J.;Dusane, R. O.;Sahonta, S. -L.;
12:123:5 Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures
DOI:10.1063/1.4813446 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Langer, Torsten;Joenen, Holger;Kruse, Andreas;Bremers, Heiko;Rossow, Uwe;Hangleiter, Andreas;
12:123:6 The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem
DOI:10.1063/1.4896279 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Massabuau, F. C-P;Davies, M. J.;Oehler, F.;Pamenter, S. K.;Thrush, E. J.;Koppers, M. J.;Kovacs, A.;Williams, T.;Hopkins, M. A.;Humphreys, C. J.;Dawson, P.;Dunin-Borkowski, R. E.;Etheridge, J.;Allsopp, D. W. E.;Oliver, R. A.;
12:123:7 Effects of stress on phase separation in InxGa1-xN/GaN multiple quantum-wells
DOI:10.1016/j.actamat.2010.11.020 JN:ACTA MATERIALIA PY:2011
TC:11 AU: Zhang, Q. L.;Meng, F. Y.;Crozier, P. A.;Newman, N.;Mahajan, S.;
12:123:8 Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures
DOI:10.1016/j.jallcom.2013.09.005 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Krause, B.;Miljevic, B.;Aschenbrenner, T.;Piskorska-Hommel, E.;Tessarek, C.;Barchuk, M.;Buth, G.;Tchana, R. Donfeu;Figge, S.;Gutowski, J.;Haenschke, D.;Kalden, J.;Laurus, T.;Lazarev, S.;Magalhaes-Paniago, R.;Sebald, K.;Wolska, A.;Hommel, D.;Falta, J.;Holy, V.;Baumbach, T.;
12:123:9 Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
DOI:10.1063/1.4792505 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Massabuau, F. C. -P.;Trinh-Xuan, L.;Lodie, D.;Thrush, E. J.;Zhu, D.;Oehler, F.;Zhu, T.;Kappers, M. J.;Humphreys, C. J.;Oliver, R. A.;
12:123:10 Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
DOI:10.1063/1.4824835 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Lobanova, A. V.;Kolesnikova, A. L.;Romanov, A. E.;Karpov, S. Yu.;Rudinsky, M. E.;Yakovlev, E. V.;
12:123:11 Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN
DOI:10.1063/1.3643001 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Meng, F. Y.;McFelea, H.;Datta, R.;Chowdhury, U.;Werkhoven, C.;Arena, C.;Mahajan, S.;
12:123:12 Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
DOI:10.1063/1.4881776 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Vaitkevicius, A.;Mickevicius, J.;Dobrovolskas, D.;Tuna, Oe.;Giesen, C.;Heuken, M.;Tamulaitis, G.;
12:123:13 The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
DOI:10.1063/1.4789758 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Li, T.;Wei, Q. Y.;Fischer, A. M.;Huang, J. Y.;Huang, Y. U.;Ponce, F. A.;Liu, J. P.;Lochner, Z.;Ryou, J. -H.;Dupuis, R. D.;
12:123:14 Paper Phase separation and atomic ordering in mixed III nitride layers
DOI:10.1016/j.scriptamat.2013.11.018 JN:SCRIPTA MATERIALIA PY:2014
TC:2 AU: Mahajan, S.;
12:123:15 The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
DOI:10.1063/1.4894834 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Davies, M. J.;Dawson, P.;Massabuau, F. C. -P.;Oliver, R. A.;Kappers, M. J.;Humphreys, C. J.;
12:123:16 Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.09.071 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Liu, Jianping;Zhang, Yun;Lochner, Zachary;Kim, Seong-Soo;Kim, Hyunsoo;Ryou, Jae-Hyun;Shen, Shyh-Chiang;Yoder, P. Doug;Dupuis, Russell D.;Wei, Qiyuan Y.;Sun, Kewei W.;Fischer, Alec M.;Ponce, Fernando A.;
12:123:17 The effect of dislocations on the efficiency of InGaN/GaN solar cells
DOI:10.1016/j.solmat.2013.06.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Zhang, Y.;Kappers, M. J.;Zhu, D.;Oehler, F.;Gao, F.;Humphreys, C. J.;
12:123:18 Extended defects in bulk GaN and III-nitrides grown on this substrate
DOI:10.1016/j.jcrysgro.2010.04.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Liliental-Weber, Z.;
12:123:19 Dislocation reduction in GaN grown on nano-patterned templates
DOI:10.1016/j.jcrysgro.2015.02.092 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yang, W. C.;Chen, K. Y.;Cheng, Kai-Yuan;Wang, Y. L.;Hsieh, K. C.;Cheng, K. Y.;
12:124:1 Silicon nanowire field-effect-transistor based biosensors: From sensitive to ultra-sensitive
DOI:10.1016/j.bios.2014.03.057 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:7 AU: Shen, Mo-Yuan;Li, Bor-Ran;Li, Yaw-Kuen;
12:124:2 All-(111) Surface Silicon Nanowires: Selective Functionalization for Biosensing Applications
DOI:10.1021/am100922e JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:23 AU: Masood, M. N.;Chen, S.;Carlen, E. T.;van den Berg, A.;
12:124:3 Biomolecular recognition with a sensitivity-enhanced nanowire transistor biosensor
DOI:10.1016/j.bios.2013.02.009 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:20 AU: Li, Bor-Ran;Chen, Chien-Wei;Yang, Wan-Ling;Lin, Ti-Yu;Pan, Chien-Yuan;Chen, Yit-Tsong;
12:124:4 Self-Assembled Monolayer-Based Selective Modification on Polysilicon Nanobelt Devices
DOI:10.1021/am402586q JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:2 AU: Liu, Hao Heng;Lin, Tzung Han;Sheu, Jeng-Tzong;
12:124:5 Nanoelectronic detection of triggered secretion of pro-inflammatory cytokines using CMOS compatible silicon nanowires
DOI:10.1016/j.bios.2010.09.059 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:18 AU: Pui, Tze-Sian;Agarwal, Ajay;Ye, Feng;Huang, Yinxi;Chen, Peng;
12:124:6 Localized Joule Heating As a Mask-Free Technique for the Local Synthesis of ZnO Nanowires on Silicon Nanodevices
DOI:10.1021/nl202539m JN:NANO LETTERS PY:2011
TC:8 AU: Chen, C. C.;Lin, Y. S.;Sang, C. H.;Sheu, J. -T.;
12:124:7 Silicon multi-nanochannel FETs to improve device uniformity/stability and femtomolar detection of insulin in serum
DOI:10.1016/j.bios.2013.01.027 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:14 AU: Regonda, Suresh;Tian, Ruhai;Gao, Jinming;Greene, Serena;Ding, Jiahuan;Hu, Walter;
12:124:8 An Ultrasensitive Nanowire-Transistor Biosensor for Detecting Dopamine Release from Living PC12 Cells under Hypoxic Stimulation
DOI:10.1021/ja408485m JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:14 AU: Li, Bor-Ran;Hsieh, Ying-Jhu;Chen, Yan-Xi;Chung, Ya-Ting;Pan, Chien-Yuan;Chen, Yit-Tsong;
12:124:9 Monitoring extracellular K+ flux with a valinomycin-coated silicon nanowire field-effect transistor
DOI:10.1016/j.bios.2011.10.005 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:10 AU: Chang, Ko-Shing;Sun, Chih-Jung;Chiang, Pei-Ling;Chou, Ai-Chuan;Lin, Ming-Chou;Liang, Chieh;Hung, Hui-Hsing;Yeh, Yu-Hsiu;Chen, Chii-Dong;Pan, Chien-Yuan;Chen, Yit-Tsong;
12:124:10 Improving Nanowire Sensing Capability by Electrical Field Alignment of Surface Probing Molecules
DOI:10.1021/nl400645j JN:NANO LETTERS PY:2013
TC:8 AU: Chu, Chia-Jung;Yeh, Chia-Sen;Liao, Chun-Kai;Tsai, Li-Chu;Huang, Chun-Ming;Lin, Hung-Yi;Shyue, Jing-Jong;Chen, Yit-Tsong;Chen, Chii-Dong;
12:124:11 Fabrication and short-wavelength light emission of Si nanowires grown via quasi solid-liquid-solid mechanism
DOI:10.1016/j.matlet.2014.07.015 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Li, Yanli;Liang, Peipei;Yang, Xu;Cai, Hua;You, Qinghu;Sun, Jian;Xu, Ning;Wu, Jiada;
12:124:12 Application of ion-sensitive field effect transistors for ion channel screening
DOI:10.1016/j.bios.2013.11.038 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:0 AU: Walsh, Kenneth B.;DeRoller, Nicholas;Zhu, Yihao;Koley, Goutam;
12:124:13 Nanosensors for label-free measurement of sodium ion fluxes of neuronal cells
DOI:10.1016/j.mseb.2009.12.053 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Gebinoga, Michael;Silveira, Liele;Cimalla, Irina;Dumitrescu, Andreea;Kittler, Mario;Luebbers, Benedikt;Becker, Annette;Lebedev, Vadim;Schober, Andreas;
12:124:14 All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations
DOI:10.1016/j.mssp.2014.08.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Masood, Muhammad Nasir;Carlen, Edwin T.;van den Berg, Albert;
12:125:1 Large-scale Nanopatterning of Single Proteins used as Carriers of Magnetic Nanoparticles
DOI:10.1002/adma.200902568 JN:ADVANCED MATERIALS PY:2010
TC:31 AU: Martinez, Ramses V.;Martinez, Javier;Chiesa, Marco;Garcia, Ricardo;Coronado, Eugenio;Pinilla-Cienfuegos, Elena;Tatay, Sergio;
12:125:2 Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks
DOI:10.1063/1.4881977 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kyoung Ryu, Yu;Aitor Postigo, Pablo;Garcia, Fernando;Garcia, Ricardo;
12:125:3 Silicon nanowire circuits fabricated by AFM oxidation nanolithography
DOI:10.1088/0957-4484/21/24/245301 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Martinez, Ramses V.;Martinez, Javier;Garcia, Ricardo;
12:125:4 Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies
DOI:10.1088/0957-4484/24/31/315205 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Ryu, Yu Kyoung;Chiesa, Marco;Garcia, Ricardo;
12:125:5 Detection of the Early Stage of Recombinational DNA Repair by Silicon Nanowire Transistors
DOI:10.1021/nl2037547 JN:NANO LETTERS PY:2012
TC:18 AU: Chiesa, Marco;Cardenas, Paula P.;Oton, Francisco;Martinez, Javier;Mas-Torrent, Marta;Garcia, Fernando;Alonso, Juan C.;Rovira, Concepcio;Garcia, Ricardo;
12:125:6 Nanopatterning of Ferritin Molecules and the Controlled Size Reduction of Their Magnetic Cores
DOI:10.1002/smll.201100366 JN:SMALL PY:2011
TC:5 AU: Martinez, Ramses V.;Chiesa, Marco;Garcia, Ricardo;
12:125:7 Nanopatterning of Anionic Nanoparticles based on Magnetic Prussian-Blue Analogues
DOI:10.1002/adfm.201200067 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:10 AU: Coronado, Eugenio;Forment-Aliaga, Alicia;Pinilla-Cienfuegos, Elena;Tatay, Sergio;Catala, Laure;Plaza, Jose A.;
12:125:8 Nanofabrication of high aspect ratio (similar to 50:1) sub-10nm silicon nanowires using inductively coupled plasma etching
DOI:10.1116/1.4755835 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:6 AU: Mirza, Muhammad M.;Zhou, Haiping;Velha, Philippe;Li, Xu;Docherty, Kevin E.;Samarelli, Antonio;Ternent, Gary;Paul, Douglas J.;
12:125:9 Nanoscale space charge generation in local oxidation nanolithography
DOI:10.1063/1.3459976 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Chiesa, Marco;Garcia, Ricardo;
12:125:10 Close contact
DOI:10.1088/0957-4484/21/26/260201 JN:NANOTECHNOLOGY PY:2010
TC:0 AU: Demming, Anna;
12:125:11 Magnetization Reversal in (CsNiCrIII)-Cr-II(CN)(6) Coordination Nanoparticles: Unravelling Surface Anisotropy and Dipolar Interaction Effects
DOI:10.1002/adfm.201400741 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Prado, Yoann;Mazerat, Sandra;Riviere, Eric;Rogez, Guillaume;Gloter, Alexandre;Stephan, Odile;Catala, Laure;Mallah, Talal;
12:125:12 Scanning probe oxidation of SiC, fabrication possibilities and kinetics considerations
DOI:10.1063/1.4825265 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Lorenzoni, M.;Torre, B.;
12:125:13 Quartz-crystal scanning probe microcantilevers with a silicon tip based on direct bonding of silicon and quartz
DOI:10.1088/0957-4484/21/40/405502 JN:NANOTECHNOLOGY PY:2010
TC:0 AU: Takahashi, Akihiro;Esashi, Masayoshi;Ono, Takahito;
12:125:14 Electroless deposition of Cu nanostructures on molecular patterns prepared by dip-pen nanolithography
DOI:10.1039/c1jm13987h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Chang, Yu-Hsu;Wang, Chia-Hsin;
12:125:15 Patterning of Magnetic Bimetallic Coordination Nanoparticles of Prussian Blue Derivatives by the Langmuir-Blodgett Technique
DOI:10.1021/la2049508 JN:LANGMUIR PY:2012
TC:15 AU: Clemente-Leon, Miguel;Coronado, Eugenio;Lopez-Munoz, Angel;Repetto, Diego;Catala, Laure;Mallah, Talal;
12:125:16 Mechanistic studies of AFM probe-driven Suzuki and Heck molecular coupling
DOI:10.1088/0957-4484/21/26/265302 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Davis, Jason J.;Hanyu, Yuki;
12:125:17 Improved local oxidation of silicon carbide using atomic force microscopy
DOI:10.1063/1.3327832 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Jo, Yeong-Deuk;Seo, Soo-Hyung;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Kim, Sang-Sig;Koo, Sang-Mo;
12:126:1 Second-order piezoelectricity in wurtzite III-N semiconductors
DOI:10.1103/PhysRevB.84.085211 JN:PHYSICAL REVIEW B PY:2011
TC:32 AU: Pal, Joydeep;Tse, Geoffrey;Haxha, Vesel;Migliorato, Max A.;Tomic, Stanko;
12:126:2 Electromechanical phenomena in semiconductor nanostructures
DOI:10.1063/1.3533402 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Voon, L. C. Lew Yan;Willatzen, M.;
12:126:3 First- and second-order piezoelectricity in III-V semiconductors
DOI:10.1103/PhysRevB.84.195207 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Beya-Wakata, Annie;Prodhomme, Pierre-Yves;Bester, Gabriel;
12:126:4 Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field
DOI:10.1063/1.4749405 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Suski, T.;Lepkowski, S. P.;Staszczak, G.;Czernecki, R.;Perlin, P.;Bardyszewski, W.;
12:126:5 Nonlinear piezoelectricity in wurtzite semiconductors
DOI:10.1103/PhysRevB.88.121304 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Prodhomme, Pierre-Yves;Beya-Wakata, Annie;Bester, Gabriel;
12:126:6 On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials
DOI:10.1063/1.3676666 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Pedesseau, L.;Katan, C.;Even, J.;
12:126:7 Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors
DOI:10.1063/1.4818798 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Tse, G.;Pal, J.;Monteverde, U.;Garg, R.;Haxha, V.;Migliorato, M. A.;Tomic, S.;
12:126:8 Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
DOI:10.1063/1.4821064 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Redaelli, L.;Wenzel, H.;Martens, M.;Einfeldt, S.;Kneissl, M.;Traenkle, G.;
12:126:9 Second-order piezoelectricity in wurtzite III-N semiconductors (vol 84, 085211, 2011)
DOI:10.1103/PhysRevB.84.159902 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Pal, Joydeep;Tse, Geoffrey;Haxha, Vesel;Migliorato, Max A.;Tomic, Stanko;
12:126:10 Tunable harmonic vibrations of quasi one-dimensional conductors induced by sliding charge-density waves
DOI:10.1103/PhysRevB.86.045104 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Nikitin, M. V.;Zybtsev, S. G.;Pokrovskii, V. Ya.;
12:126:11 Two intermediate bands solar cells of InGaN/InN quantum dot supracrystals
DOI:10.1007/s00339-014-8296-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wei, Wensheng;Zhang, Qiubo;Zhao, Shaoyun;Zhang, Yaoju;
12:126:12 Non-linear piezoelectricity in wurtzite ZnO semiconductors
DOI:10.1016/j.nanoen.2013.05.005 JN:NANO ENERGY PY:2013
TC:9 AU: Al-Zahrani, H. Y. S.;Pal, J.;Migliorato, M. A.;
12:126:13 Torque and temperature dependence of the hysteretic voltage-induced torsional strain in tantalum trisulfide
DOI:10.1103/PhysRevB.84.125134 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Zhang, H.;Nichols, J.;Brill, J. W.;
12:126:14 First-principles study on piezoelectric and electro-optical properties of ZnX (X = O, S, Se, Te)
DOI:10.1016/j.commatsci.2014.02.030 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Hu, Lei;Lin, Chen-Sheng;Yang, Yi;Chen, Jin-Feng;Cheng, Wen-Dan;
12:126:15 Crystal orientation effects on wurtzite quantum well electromechanical fields
DOI:10.1103/PhysRevB.82.205303 JN:PHYSICAL REVIEW B PY:2010
TC:2 AU: Duggen, Lars;Willatzen, Morten;
12:126:16 Quantum teleportation of electrons in quantum wires with surface acoustic waves
DOI:10.1103/PhysRevB.81.045312 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Buscemi, Fabrizio;Bordone, Paolo;Bertoni, Andrea;
12:126:17 Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
DOI:10.1007/s00339-013-7826-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Zhang, Qiubo;Wei, Wensheng;
12:127:1 Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters
DOI:10.1063/1.4824691 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Saron, K. M. A.;Hashim, M. R.;Naderi, N.;Allam, Nageh K.;
12:127:2 Study of using aqueous NH3 to synthesize GaN nanowires on Si(111) by thermal chemical vapor deposition
DOI:10.1016/j.mseb.2012.12.009 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:6 AU: Saron, K. M. A.;Hashim, M. R.;
12:127:3 Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties
DOI:10.1063/1.4798266 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Saron, K. M. A.;Hashim, M. R.;Allam, Nageh K.;
12:127:4 Stress control in ZnO films on GaN/Al2O3 via wet oxidation of Zn under various temperatures
DOI:10.1016/j.apsusc.2012.01.114 JN:APPLIED SURFACE SCIENCE PY:2012
TC:15 AU: Saron, K. M. A.;Hashim, M. R.;Farrukh, M. A.;
12:127:5 NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique
DOI:10.1016/j.jcrysgro.2012.03.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Saron, K. M. A.;Hashim, M. R.;Farrukh, M. A.;
12:127:6 One-dimensional ZnO nanostructure growth prepared by thermal evaporation on different substrates: Ultraviolet emission as a function of size and dimensionality
DOI:10.1016/j.ceramint.2013.02.088 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Hassan, N. K.;Hashim, M. R.;Bououdina, M.;
12:127:7 Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures
DOI:10.1063/1.4904749 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Mohan, Lokesh;Chandan, Greeshma;Mukundan, Shruthi;Roul, Basanta;Krupanidhi, S. B.;
12:127:8 Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique
DOI:10.1016/j.matchemphys.2013.01.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Saron, K. M. A.;Hashim, M. R.;
12:127:9 Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
DOI:10.1063/1.3549685 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Roul, Basanta;Rajpalke, Mohana K.;Bhat, Thirumaleshwara N.;Kumar, Mahesh;Sinha, Neeraj;Kalghatgi, A. T.;Krupanidhi, S. B.;
12:127:10 Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium
DOI:10.1016/j.jallcom.2010.10.017 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Shi, Feng;Zhang, Dongdong;Xue, Chengshan;
12:127:11 A systematic investigation into the conversion of beta-Ga2O3 to GaN nanowires using NH3 and H-2: Effects on the photoluminescence properties
DOI:10.1063/1.3525562 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Othonos, Andreas;Zervos, Matthew;Christofides, Constantinos;
12:127:12 Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction
DOI:10.1063/1.4739261 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Rajpalke, Mohana K.;Bhat, Thirumaleshwara N.;Roul, Basanta;Kumar, Mahesh;Krupanidhi, S. B.;
12:127:13 Influence of ammoniating time on the microstructure of Mg-doped GaN nanowires
DOI:10.1016/j.mseb.2010.01.037 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Shi, Feng;Zhang, Dongdong;Xue, Chengshan;
12:127:14 Photogated transistor of III-nitride nanorods
DOI:10.1063/1.3330876 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Seo, H. W.;Tu, L. W.;Chen, Q. Y.;Ho, C. Y.;Lin, Y. T.;Wu, K. L.;Jang, D. J.;Norman, D. P.;Ho, N. J.;
12:127:15 Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy
DOI:10.1063/1.3658867 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Bhat, Thirumaleshwara N.;Rajpalke, Mohana K.;Roul, Basanta;Kumar, Mahesh;Krupanidhi, S. B.;
12:127:16 Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
DOI:10.1063/1.3634116 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Roul, Basanta;Kumar, Mahesh;Rajpalke, Mohana K.;Bhat, Thirumaleshwara N.;Sinha, Neeraj;Kalghatgi, A. T.;Krupanidhi, S. B.;
12:127:17 Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
DOI:10.1016/j.solmat.2012.06.041 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:6 AU: Kang, Dong-Won;Kwon, Jang-Yeon;Shim, Jenny;Lee, Heon-Min;Han, Min-Koo;
12:128:1 Strong Tuning of Rashba Spin-Orbit Interaction in Single InAs Nanowires
DOI:10.1021/nl301325h JN:NANO LETTERS PY:2012
TC:23 AU: Liang, Dong;Gao, Xuan P. A.;
12:128:2 Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography
DOI:10.1021/nl104403g JN:NANO LETTERS PY:2012
TC:19 AU: Storm, Kristian;Nylund, Gustav;Samuelson, Lars;Micolich, Adam P.;
12:128:3 Minimization of the contact resistance between InAs nanowires and metallic contacts
DOI:10.1088/0957-4484/24/4/045703 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Sourribes, M. J. L.;Isakov, I.;Panfilova, M.;Warburton, P. A.;
12:128:4 Facile fabrication of lateral nanowire wrap-gate devices with improved performance
DOI:10.1063/1.3634010 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Dhara, Sajal;Sengupta, Shamashis;Solanki, Hari S.;Maurya, Arvind;Pavan R, Arvind;Gokhale, M. R.;Bhattacharya, Arnab;Deshmukh, Mandar M.;
12:128:5 Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
DOI:10.1021/nl403299u JN:NANO LETTERS PY:2014
TC:3 AU: Carrad, Damon J.;Burke, Adam M.;Lyttleton, Roman W.;Joyce, Hannah J.;Tan, Hark Hoe;Jagadish, Chennupati;Storm, Kristian;Linke, Heiner;Samuelson, Lars;Micolich, Adam P.;
12:128:6 Comparison of gate geometries for tunable, local barriers in InAs nanowires
DOI:10.1063/1.4759248 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Nissen, Peter Dahl;Jespersen, Thomas Sand;Grove-Rasmussen, Kasper;Marton, Attila;Upadhyay, Shivendra;Madsen, Morten Hannibal;Csonka, Szabolcs;Nygard, Jesper;
12:128:7 Encapsulated gate-all-around InAs nanowire field-effect transistors
DOI:10.1063/1.4832058 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Sasaki, Satoshi;Tateno, Kouta;Zhang, Guoqiang;Suominen, Henri;Harada, Yuichi;Saito, Shiro;Fujiwara, Akira;Sogawa, Tetsuomi;Muraki, Koji;
12:128:8 Suspended InAsnanowire gate-all-around field-effect transistors
DOI:10.1063/1.4896105 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, Qiang;Huang, Shaoyun;Pan, Dong;Wang, Jingyun;Zhao, Jianhua;Xu, H. Q.;
12:128:9 High performance horizontal gate-all-around silicon nanowire field-effect transistors
DOI:10.1088/0957-4484/23/39/395202 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Shirak, O.;Shtempluck, O.;Kotchtakov, V.;Bahir, G.;Yaish, Y. E.;
12:128:10 VLS Growth of Alternating InAsP/InP Heterostructure Nanowires for Multiple-Quantum-Dot Structures
DOI:10.1021/nl300482n JN:NANO LETTERS PY:2012
TC:14 AU: Tateno, Kouta;Zhang, Guoqiang;Gotoh, Hideki;Sogawa, Tetsuomi;
12:128:11 InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments
DOI:10.1021/nl5043243 JN:NANO LETTERS PY:2015
TC:0 AU: Burke, A. M.;Carrad, D. J.;Gluschke, J. G.;Storm, K.;Svensson, S. Fahlvik;Linke, H.;Samuelson, L.;Micolich, A. P.;
12:128:12 Study on Assembly Method for GaAs Nanowires Device
DOI:10.1080/10584587.2014.901126 JN:INTEGRATED FERROELECTRICS PY:2014
TC:1 AU: Xu, Ke;Hou, Jing;Liu, Jian;Li, Mengxin;Huang, Kuan;Qi, Yuanwei;
12:128:13 Young's Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams
DOI:10.1021/nl5047939 JN:NANO LETTERS PY:2015
TC:0 AU: Calahorra, Y.;Shtempluck, O.;Kotchetkov, V.;Yaish, Y. E.;
12:128:14 Spin polarized current through Cu-DNA modulated by a gate voltage
DOI:10.1063/1.4793479 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Kang, D. W.;Hao, X. P.;Li, X. Z.;Li, L. B.;Xie, S. J.;
12:128:15 "Study on Assembly Method for GaAs Nanowires Device" (vol 151, pg 187, 2014)
DOI:10.1080/10584587.2014.926182 JN:INTEGRATED FERROELECTRICS PY:2014
TC:0 AU: Xu, Ke;Hou, Jing;Liu, Jian;Li, Mengxin;Huang, Kuan;Qi, Yuanwei;
12:129:1 Vertical InAs Nanowire Wrap Gate Transistors with f(t) > 7 GHz and f(Max) > 20 GHz
DOI:10.1021/nl903125m JN:NANO LETTERS PY:2010
TC:67 AU: Egard, M.;Johansson, S.;Johansson, A. -C;Persson, K. -M.;Dey, A. W.;Borg, B. M.;Thelander, C.;Wernersson, L. -E.;Lind, E.;
12:129:2 Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots
DOI:10.1021/nl200209m JN:NANO LETTERS PY:2011
TC:23 AU: Roddaro, Stefano;Pescaglini, Andrea;Ercolani, Daniele;Sorba, Lucia;Beltram, Fabio;
12:129:3 Site-Controlled VLS Growth of Planar Nanowires: Yield and Mechanism
DOI:10.1021/nl502525z JN:NANO LETTERS PY:2014
TC:3 AU: Zhang, Chen;Miao, Xin;Mohseni, Parsian K.;Choi, Wonsik;Li, Xiuling;
12:129:4 High-Speed Planar GaAs Nanowire Arrays with f(max) > 75 GHz by Wafer-Scale Bottom-up Growth
DOI:10.1021/nl503596j JN:NANO LETTERS PY:2015
TC:0 AU: Miao, Xin;Chabak, Kelson;Zhang, Chen;Mohseni, Parsian K.;Walker, Dennis, Jr.;Li, Xiuling;
12:129:5 Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel
DOI:10.1021/nl400620f JN:NANO LETTERS PY:2013
TC:12 AU: Miao, Xin;Zhang, Chen;Li, Xiuling;
12:129:6 Relationship between planar GaAs nanowire growth direction and substrate orientation
DOI:10.1088/0957-4484/24/3/035304 JN:NANOTECHNOLOGY PY:2013
TC:13 AU: Dowdy, Ryan S.;Walko, Donald A.;Li, Xiuling;
12:129:7 Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities
DOI:10.1364/OME.3.001687 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:4 AU: Dowdy, Ryan S.;Zhang, Chen;Mohseni, Parsian K.;Fortuna, Seth A.;Wen, Jian-Guo;Coleman, James J.;Li, Xiuling;
12:129:8 Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots
DOI:10.1021/nl301497j JN:NANO LETTERS PY:2012
TC:7 AU: Romeo, Lorenzo;Roddaro, Stefano;Pitanti, Alessandro;Ercolani, Daniele;Sorba, Lucia;Beltram, Fabio;
12:130:1 Physical properties of AlxIn1-xN thin film alloys sputtered at low temperature
DOI:10.1063/1.4898565 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Besleaga, C.;Galca, A. C.;Miclea, C. F.;Mercioniu, I.;Enculescu, M.;Stan, G. E.;Mateescu, A. O.;Dumitru, V.;Costea, S.;
12:130:2 Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
DOI:10.1063/1.3576912 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Junaid, M.;Hsiao, C. -L.;Palisaitis, J.;Jensen, J.;Persson, P. O. A.;Hultman, L.;Birch, J.;
12:130:3 Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
DOI:10.1016/j.tsf.2012.09.072 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Hsiao, Ching-Lien;Palisaitis, Justinas;Junaid, Muhammad;Persson, Per O. A.;Jensen, Jens;Zhao, Qing-Xiang;Hultman, Lars;Chen, Li-Chyong;Chen, Kuei-Hsien;Birch, Jens;
12:130:4 Thermal stability of Al1-xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope
DOI:10.1016/j.actamat.2013.04.043 JN:ACTA MATERIALIA PY:2013
TC:3 AU: Palisaitis, J.;Hsiao, C. -L.;Hultman, L.;Birch, J.;Persson, P. O. A.;
12:130:5 Curved-Lattice Epitaxial Growth of InxAl1-xN Nanospirals with Tailored Chirality
DOI:10.1021/n1503564k1 JN:NANO LETTERS PY:2015
TC:1 AU: Hsiao, Ching-Lien;Magnusson, Roger;Palisaitis, Justinas;Sandstrom, Per;Persson, Per O. A.;Valyukh, Sergiy;Hultman, Lars;Jarrendahl, Kenneth;Birch, Jens;
12:130:6 Photoconductivity in single AlN nanowires by subband gap excitation
DOI:10.1063/1.3292211 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Huang, H. M.;Chen, R. S.;Chen, H. Y.;Liu, T. W.;Kuo, C. C.;Chen, C. P.;Hsu, H. C.;Chen, L. C.;Chen, K. H.;Yang, Y. J.;
12:130:7 Observation of radio frequency ring-shaped hollow cathode discharge plasma with MgO and Al electrodes for plasma processing
DOI:10.1116/1.4871467 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:3 AU: Ohtsu, Yasunori;Matsumoto, Naoki;
12:130:8 Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
DOI:10.1063/1.3671560 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Junaid, M.;Lundin, D.;Palisaitis, J.;Hsiao, C. -L.;Darakchieva, V.;Jensen, J.;Persson, P. O. A.;Sandstrom, P.;Lai, W. -J.;Chen, L. -C.;Chen, K. -H.;Helmersson, U.;Hultman, L.;Birch, J.;
12:130:9 Photoconduction mechanism of oxygen sensitization in InN nanowires
DOI:10.1088/0957-4484/22/42/425702 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Chen, R. S.;Yang, T. H.;Chen, H. Y.;Chen, L. C.;Chen, K. H.;Yang, Y. J.;Su, C. H.;Lin, C. R.;
12:130:10 Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition
DOI:10.1016/j.tsf.2014.09.065 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Snure, Michael;Paduano, Qing;Hamilton, Merle;Shoaf, Jodie;Mann, J. Matthew;
12:130:11 Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy
DOI:10.1016/j.apsusc.2013.08.102 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Chen, Ruei-San;Tang, Chih-Che;Hsiao, Ching-Lien;Holtz, Per Olof;Birch, Jens;
12:130:12 On the effect of water and oxygen in chemical vapor deposition of boron nitride
DOI:10.1016/j.tsf.2012.05.004 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Pedersen, Henrik;Chubarov, Mikhail;Hogberg, Hans;Jensen, Jens;Henry, Anne;
12:130:13 Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering
DOI:10.1155/2011/579427 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:7 AU: Amirhoseiny, M.;Hassan, Z.;Ng, S. S.;Ahmad, M. A.;
12:130:14 Optical Mueller matrix modeling of chiral AlxIn1 (-) N-x nanospirals
DOI:10.1016/j.tsf.2014.02.015 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Magnusson, Roger;Birch, Jens;Sandstrom, Per;Hsiao, Ching-Lien;Arwin, Hans;Jarrendahl, Kenneth;
12:130:15 Criteria of radio-frequency ring-shaped hollow cathode discharge using H-2 and Ar gases for plasma processing
DOI:10.1063/1.4776220 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Ohtsu, Yasunori;Kawasaki, Yujiro;
12:130:16 Thick In (x) Ga1-x N Films Prepared by Reactive Sputtering with Single Cermet Targets
DOI:10.1007/s11664-013-2635-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Li, Cheng-Che;Kuo, Dong-Hau;Hsieh, Pin-Wei;Huang, Ying-Sheng;
12:130:17 Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature
DOI:10.1016/j.tsf.2011.09.082 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Younes, Ghassan;Ferro, Gabriel;Soueidan, Maher;Brioude, Arnaud;Souliere, Veronique;Cauwet, Francois;
12:131:1 Characterization of inclined GaSb nanopillars by Mueller matrix ellipsometry
DOI:10.1063/1.3386460 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: Nerbo, I. S.;Le Roy, S.;Foldyna, M.;Kildemo, M.;Sondergard, E.;
12:131:2 Anisotropic Bruggeman effective medium approaches for slanted columnar thin films
DOI:10.1063/1.4819240 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Schmidt, Daniel;Schubert, Mathias;
12:131:3 Optical properties of cobalt slanted columnar thin films passivated by atomic layer deposition
DOI:10.1063/1.3675549 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Schmidt, Daniel;Schubert, Eva;Schubert, Mathias;
12:131:4 THz dielectric anisotropy of metal slanted columnar thin films
DOI:10.1063/1.3626846 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Hofmann, T.;Schmidt, D.;Boosalis, A.;Kuehne, P.;Skomski, R.;Herzinger, C. M.;Woollam, J. A.;Schubert, M.;Schubert, E.;
12:131:5 Generalized ellipsometry effective medium approximation analysis approach for porous slanted columnar thin films infiltrated with polymer
DOI:10.1063/1.4821159 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Liang, D.;Schmidt, D.;Wang, H.;Schubert, E.;Schubert, M.;
12:131:6 Characterization of highly anisotropic three-dimensionally nanostructured surfaces
DOI:10.1016/j.tsf.2013.10.119 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Schmidt, Daniel;
12:131:7 Vector magneto-optical generalized ellipsometry for sculptured thin films
DOI:10.1063/1.4799365 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Schmidt, Daniel;Briley, Chad;Schubert, Eva;Schubert, Mathias;
12:131:8 Magneto-optical properties of cobalt slanted columnar thin films
DOI:10.1063/1.3340913 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Schmidt, Daniel;Hofmann, Tino;Herzinger, Craig M.;Schubert, Eva;Schubert, Mathias;
12:131:9 Towards FDTD modeling of spectroscopic ellipsometry data at large angles of incidence
DOI:10.1016/j.apsusc.2012.12.144 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Cheung, King Tai;Foo, Yishu;To, Chap Hang;Zapien, Juan Antonio;
12:131:10 Determination of small tilt angles of short GaSb nanopillars using UV-visible Mueller matrix ellipsometry
DOI:10.1016/j.tsf.2012.10.136 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Aas, L. M. S.;Kildemo, M.;Cohin, Y.;Sondergard, E.;
12:131:11 On the development of Finite-Difference Time-Domain for modeling the spectroscopic ellipsometry response of 1D periodic structures
DOI:10.1016/j.tsf.2014.02.017 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Foo, Yishu;Cheung, King Tai;To, Chap Hang;Zapien, Juan Antonio;
12:131:12 Combining surface X-ray scattering and ellipsometry for non-destructive characterization of ion beam-induced GaSb surface nanostructures
DOI:10.1016/j.tsf.2013.10.100 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Hoydalsvik, Kristin;Aas, Lars Martin S.;Doli, Ellen;Sondergard, Elin;Kildemo, Morten;Breiby, Dag Werner;
12:131:13 Effective medium approximations for anisotropic composites with arbitrary component orientation
DOI:10.1063/1.4826616 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Levy, Ohad;Cherkaev, Elena;
12:131:14 Acoustic scattering from microfibers of Parylene C
DOI:10.1063/1.4896946 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Chindam, Chandraprakash;Lakhtakia, Akhlesh;Awadelkarim, Osama O.;Orfali, Wasim;
12:131:15 Optical Characterization of Silver Nanorod Thin Films Grown Using Oblique Angle Deposition
DOI:10.1155/2014/694982 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Benson, Michael;Shah, Piyush;Marciniak, Michael;Sarangan, Andrew;Urbas, Augustine;
12:131:16 Enhancement in broadband and quasi-omnidirectional antireflection of nanopillar arrays by ion milling
DOI:10.1088/0957-4484/23/27/275703 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Huang, Zhifeng;Hawkeye, Matthew M.;Brett, Michael J.;
12:131:17 On the modeling of ellipsometry data at large angles of incidence using finite-difference time-domain
DOI:10.1016/j.tsf.2014.05.027 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Foo, Yishu;Cheung, King Tai;To, Chap Hang;Zapien, Juan Antonio;
12:132:1 Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
DOI:10.1063/1.4707386 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Kudrawiec, R.;Gladysiewicz, M.;Janicki, L.;Misiewicz, J.;Cywinski, G.;Cheze, C.;Wolny, P.;Prystawko, P.;Skierbiszewski, C.;
12:132:2 The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures
DOI:10.1063/1.3592801 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Gladysiewicz, M.;Kudrawiec, R.;Misiewicz, J.;Cywinski, G.;Siekacz, M.;Wolny, P.;Skierbiszewski, C.;
12:132:3 Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content: Effect of growth method
DOI:10.1063/1.3319585 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Koehler, K.;Mueller, S.;Aidam, R.;Waltereit, P.;Pletschen, W.;Kirste, L.;Menner, H. P.;Bronner, W.;Leuther, A.;Quay, R.;Mikulla, M.;Ambacher, O.;Granzner, R.;Schwierz, F.;Buchheim, C.;Goldhahn, R.;
12:132:4 Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
DOI:10.1063/1.4817296 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Kudrawiec, R.;Janicki, L.;Gladysiewicz, M.;Misiewicz, J.;Cywinski, G.;Bockowski, M.;Muziol, G.;Cheze, C.;Sawicka, M.;Skierbiszewski, C.;
12:132:5 Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
DOI:10.1063/1.4901922 JN:AIP ADVANCES PY:2014
TC:4 AU: Kempisty, Pawel;Krukowski, Stanislaw;
12:132:6 Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN
DOI:10.1063/1.3455907 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Kudrawiec, R.;Tschumak, E.;Misiewicz, J.;As, D. J.;
12:132:7 Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
DOI:10.1063/1.4770413 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Kudrawiec, R.;Nair, H. P.;Latkowska, M.;Misiewicz, J.;Bank, S. R.;Walukiewicz, W.;
12:132:8 Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures
DOI:10.1063/1.4827376 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Gladysiewicz, M.;Kudrawiec, R.;Misiewicz, J.;Klosek, K.;Sobanska, M.;Borysiuk, J.;Zytkiewicz, Z. R.;
12:132:9 High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
DOI:10.1063/1.3523358 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Li, Guowang;Cao, Yu;Xing, Huili Grace;Jena, Debdeep;
12:132:10 Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.4793765 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Cywinski, Grzegorz;Kudrawiec, Robert;Janicki, Lukasz;Misiewicz, Jan;Cheze, Caroline;Siekacz, Marcin;Sawicka, Marta;Wolny, Pawel;Bockowski, Michal;Skierbiszewski, Czeslaw;
12:132:11 Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements
DOI:10.1063/1.4757932 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Pietzka, C.;Li, G.;Alomari, M.;Xing, H.;Jena, D.;Kohn, E.;
12:132:12 Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer
DOI:10.1063/1.4870442 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Gladysiewicz, M.;Janicki, L.;Kudrawiec, R.;Misiewicz, J.;Wosko, M.;Paszkiewicz, R.;Paszkiewicz, B.;Tlaczala, M.;
12:132:13 Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility
DOI:10.1007/s13391-014-4067-9 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Das, Palash;Halder, Nripendra N.;Kumar, Rahul;Jana, Sanjay Kr;Kabi, Sanjib;Borisov, Boris;Dabiran, Amir;Chow, Peter;Biswas, Dhrubes;
12:132:14 Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
DOI:10.1063/1.3685483 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Park, Pil Sung;Nath, Digbijoy N.;Krishnamoorthy, Sriram;Rajan, Siddharth;
12:132:15 Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
DOI:10.1063/1.3553866 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Koehler, K.;Mueller, S.;Waltereit, P.;Pletschen, W.;Polyakov, V.;Lim, T.;Kirste, L.;Menner, H. P.;Brueckner, P.;Ambacher, O.;Buchheim, C.;Goldhahn, R.;
12:132:16 Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells
DOI:10.1063/1.3533417 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Kudrawiec, R.;Gladysiewicz, M.;Dussaigne, A.;Teisseyre, H.;Bockowski, M.;Grzegory, I.;Suski, T.;Misiewicz, J.;Grandjean, N.;
12:132:17 Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
DOI:10.1063/1.4752257 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Waltereit, P.;Bronner, W.;Musser, M.;van Raay, F.;Dammann, M.;Caesar, M.;Mueller, S.;Kirste, L.;Koehler, K.;Quay, R.;Mikulla, M.;Ambacher, O.;
12:132:18 Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures
DOI:10.1063/1.3499656 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Polyakov, V. M.;Cimalla, V.;Lebedev, V.;Koehler, K.;Mueller, S.;Waltereit, P.;Ambacher, O.;
12:132:19 GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
DOI:10.1063/1.4724097 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Hwang, J. S.;Tsai, J. T.;Su, I. C.;Lin, H. C.;Lu, Y. T.;Chiu, P. C.;Chyi, J. I.;
12:133:1 Band gap tuning in GaN through equibiaxial in-plane strains
DOI:10.1063/1.3431290 JN:APPLIED PHYSICS LETTERS PY:2010
TC:32 AU: Dong, L.;Yadav, S. K.;Ramprasad, R.;Alpay, S. P.;
12:133:2 Density functional theory study of ZnX (X=O, S, Se, Te) under uniaxial strain
DOI:10.1103/PhysRevB.81.144120 JN:PHYSICAL REVIEW B PY:2010
TC:27 AU: Yadav, S. K.;Sadowski, T.;Ramprasad, R.;
12:133:3 Strain-assisted bandgap modulation in Zn based II-VI semiconductors
DOI:10.1063/1.4729153 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Yadav, S. K.;Ramprasad, R.;
12:133:4 Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric properties of ZnO-BeO solid solutions
DOI:10.1103/PhysRevB.84.035315 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Dong, L.;Alpay, S. P.;
12:133:5 Polarization, piezoelectric properties, and elastic coefficients of InxGa1-xN solid solutions from first principles
DOI:10.1007/s10853-012-6351-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:5 AU: Dong, L.;Alpay, S. P.;
12:133:6 Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells
DOI:10.1063/1.4816254 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Dong, L.;Mantese, J. V.;Avrutin, V.;Oezguer, U.;Morkoc, H.;Alpay, S. P.;
12:133:7 Blue-light luminescence enhancement and increased band gap from calcium-doped zinc oxide nanoparticle films
DOI:10.1016/j.mssp.2014.05.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Srivastava, Anchal;Kumar, Nishant;Misra, Kamakhya Prakash;Khare, Sanjay;
12:133:8 Hybrid density functional theory study of band gap tuning in AlN and GaN through equibiaxial strains
DOI:10.1063/1.3675864 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Duan, Yifeng;Qin, Lixia;Shi, Liwei;Tang, Gang;Shi, Hongliang;
12:133:9 Anomalous structural transformation, spontaneous polarization, piezoelectric response, and band structure of semiconductor aluminum nitride under hydrostatic pressure
DOI:10.1063/1.3662031 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Duan, Yifeng;Qin, Lixia;Shi, Liwei;Tang, Gang;Shi, Hongliang;
12:133:10 Comparing the effects of uniaxial and biaxial strains on the structural stability and electronic structure in wurtzite ZnS
DOI:10.1063/1.4813618 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Lv, Dong;Duan, Yifeng;Zhao, Botao;Qin, Lixia;Shi, Liwei;Tang, Gang;Shi, Hongliang;
12:133:11 Indium adsorption and incorporation mechanisms in AlN
DOI:10.1007/s10853-011-5323-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:2 AU: Kalesaki, Efterpi;Kioseoglou, Joseph;Komninou, Philomela;Karakostas, Theodoros;
12:133:12 Elastic Coefficients of Zn1-x Be (x) O Solid Solutions: a First-Principles Study
DOI:10.1007/s11664-012-2110-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Dong, L.;Alpay, S. P.;
12:133:13 Study on synthesis and optical properties of Al-doped ZnO hierarchical nanostructures
DOI:10.1063/1.3559506 JN:AIP ADVANCES PY:2011
TC:6 AU: Wang, X. H.;Li, R. B.;Fan, D. H.;
12:133:14 Electronic, elastic and optical properties on the Zn1-xMgxSe mixed alloys
DOI:10.1007/s10853-010-4864-y JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:5 AU: Surucu, G.;Colakoglu, K.;Deligoz, E.;Ciftci, Y.;Korozlu, N.;
12:134:1 Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison
DOI:10.1016/j.jcrysgro.2014.03.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Ahl, J. -P.;Hertkorn, J.;Koch, H.;Galler, B.;Michel, B.;Binder, M.;Hollaender, B.;
12:134:2 Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells
DOI:10.1016/j.jcrysgro.2012.06.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Lee, S. R.;Koleske, D. D.;Crawford, M. H.;Wierer, J. J., Jr.;
12:134:3 The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
DOI:10.1016/j.jcrysgro.2013.10.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Massabuau, F. C-P;Tartan, C. C.;Traynier, R.;Blenkhorn, W. E.;Kappers, M. J.;Dawson, P.;Humphreys, C. J.;Oliver, R. A.;
12:134:4 Connection between GaN and InGaN growth mechanisms and surface morphology
DOI:10.1010/j.jcrysgra.2014.01.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Koleske, D. D.;Lee, S. R.;Crawford, M. H.;Cross, K. C.;Coltrin, M. E.;Kempisty, J. M.;
12:134:5 Controlling indium incorporation in InGaN barriers with dilute hydrogen flows
DOI:10.1016/j.jcrysgro.2013.12.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Koleske, D. D.;Wierer, J. J., Jr.;Fischer, A. J.;Lee, S. R.;
12:134:6 On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers
DOI:10.1016/j.jcrysgro.2014.12.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:2 AU: Koleske, D. D.;Fischer, A. J.;Bryant, B. N.;Kotula, P. G.;Wierer, J. J.;
12:134:7 Indium induced step transformation during InGaN growth on GaN
DOI:10.1063/1.3479414 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Koleske, D. D.;Lee, S. R.;Thaler, G.;Crawford, M. H.;Coltrin, M. E.;Cross, K. C.;
12:134:8 Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.10.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Leszczynski, M.;Czernecki, R.;Krukowski, S.;Krysko, M.;Targowski, G.;Prystawko, P.;Plesiewicz, J.;Perlin, P.;Suski, T.;
12:134:9 Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits
DOI:10.1063/1.3585118 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Tomiya, Shigetaka;Kanitani, Yuya;Tanaka, Shinji;Ohkubo, Tadakatsu;Hono, Kazuhiro;
12:134:10 Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well
DOI:10.1063/1.4856435 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Cho, Yong-Hee;Kim, Jun-Youn;Kim, Jaekyun;Shim, Mun-Bo;Hwang, Sangheum;Park, Seoung-Hwan;Park, Young-Soo;Kim, Sungjin;
12:134:11 Thermal stability of thin InGaN films on GaN
DOI:10.1016/j.jcrysgro.2010.03.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Thaler, G. T.;Koleske, D. D.;Lee, S. R.;Bogart, K. H. A.;Crawford, M. H.;
12:134:12 Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
DOI:10.1016/j.jcrysgro.2014.05.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Czernecki, Robert;Kret, Slawomir;Kempisty, Pawel;Grzanka, Ewa;Plesiewicz, Jerzy;Targowski, Greg;Grzanka, Szymon;Bilska, Marta;Smalc-Koziorowska, Julita;Krukowski, Stanislaw;Suski, Tadek;Perlin, Piotr;Leszczynski, Mike;
12:134:13 Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
DOI:10.1103/PhysRevB.81.125314 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Jahn, U.;Brandt, O.;Luna, E.;Sun, X.;Wang, H.;Jiang, D. S.;Bian, L. F.;Yang, H.;
12:134:14 The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
DOI:10.1063/1.4790311 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Jouvet, Nicolas;Kappers, Menno J.;Humphreys, Colin J.;Oliver, Rachel A.;
12:134:15 Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells
DOI:10.1010/j.jcrysgro.2014.09.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Czernecki, Robert;Grzanka, Ewa;Smalc-Koziorowska, Julita;Grzanka, Szymon;Schiavon, Dario;Targowski, Grzegorz;Plesiewicz, Jerzy;Prystawko, Pawel;Suski, Tadeusz;Perlin, Piotr;Leszczynski, Mike;
12:134:16 Effects of InGaN/GaN superlattice absorption layers on the structural and optical properties of InGaN solar cells
DOI:10.1116/1.3554837 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:5 AU: Tsai, Chia-Lung;Fan, Gong-Cheng;Lee, Yu-Sheng;
12:135:1 Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires
DOI:10.1063/1.4904952 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Mancini, L.;Fontana, Y.;Conesa-Boj, S.;Blum, I.;Vurpillot, F.;Francaviglia, L.;Russo-Averchi, E.;Heiss, M.;Arbiol, J.;Fontcuberta i Morral, A.;Rigutti, L.;
12:135:2 Atom Probe Tomography of a-Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior
DOI:10.1021/nn2050517 JN:ACS NANO PY:2012
TC:19 AU: Riley, James R.;Bernal, Rodrigo A.;Li, Qiming;Espinosa, Horacio D.;Wang, George T.;Lauhon, Lincoln J.;
12:135:3 On the reliable analysis of indium mole fraction within InxGa1-xN quantum wells using atom probe tomography
DOI:10.1063/1.4871510 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Riley, James R.;Detchprohm, Theeradetch;Wetzel, Christian;Lauhon, Lincoln J.;
12:135:4 Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes
DOI:10.1002/adfm.201100894 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:19 AU: De, Suman;Layek, Arunasish;Raja, Archana;Kadir, Abdul;Gokhale, Mahesh R.;Bhattacharya, Arnab;Dhar, Subhabrata;Chowdhury, Arindam;
12:135:5 Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
DOI:10.1063/1.3294624 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Netzel, C.;Hoffmann, V.;Wernicke, T.;Knauer, A.;Weyers, M.;Kneissl, M.;Szabo, N.;
12:135:6 Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes
DOI:10.1063/1.3671092 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: De, Suman;Das, Dibyendu Kumar;Layek, Arunasish;Raja, Archana;Singh, Manoj Kumar;Bhattacharya, Arnab;Dhar, Subhabrata;Chowdhury, Arindam;
12:135:7 Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
DOI:10.1063/1.4754079 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: De, Suman;Layek, Arunasish;Bhattacharya, Sukanya;Das, Dibyendu Kumar;Kadir, Abdul;Bhattacharya, Arnab;Dhar, Subhabrata;Chowdhury, Arindam;
12:135:8 Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
DOI:10.1063/1.4866815 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Li, Zhi;Kang, Junjie;Wang, Bo Wei;Li, Hongjian;Weng, Yu Hsiang;Lee, Yueh-Chien;Liu, Zhiqiang;Yi, Xiaoyan;Feng, Zhe Chuan;Wang, Guohong;
12:135:9 Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects
DOI:10.1063/1.4830023 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:10 AU: Diercks, David R.;Gorman, Brian P.;Kirchhofer, Rita;Sanford, Norman;Bertness, Kris;Brubaker, Matt;
12:135:10 Atomic scale investigations on CdxZn1-xSe quantum dots: Correlation between the composition and emission properties
DOI:10.1063/1.4891635 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Benallali, H.;Cremel, T.;Hoummada, K.;Mangelinck, D.;Andre, R.;Tatarenko, S.;Kheng, K.;
12:135:11 Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes
DOI:10.1063/1.4759373 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Liu, Lei;Wang, Lei;Liu, Ningyang;Yang, Wei;Li, Ding;Chen, Weihua;Feng, Zhe Chuan;Lee, Yueh-Chien;Ferguson, Ian;Hu, Xiaodong;
12:135:12 Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (11(2)over-bar2) Facet GaN
DOI:10.1007/s11664-011-1652-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:4 AU: Wang, Lianshan;Lu, Zhiqin;Liu, Sheng;Feng, Zhe Chuan;
12:136:1 High aspect ratio silicon etch: A review
DOI:10.1063/1.3474652 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:123 AU: Wu, Banqiu;Kumar, Ajay;Pamarthy, Sharma;
12:136:2 A simple method for fabrication of high-aspect-ratio all-silicon grooves
DOI:10.1016/j.apsusc.2013.07.107 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Ma, Yuncan;Pan, An;Si, Jinhai;Chen, Tao;Chen, Feng;Hou, Xun;
12:136:3 Mask undercut in deep silicon etch
DOI:10.1063/1.3579542 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Saraf, I.;Goeckner, M.;Goodlin, Brian;Kirmse, Karen;Overzet, L.;
12:136:4 Electrochemical Micromachining as an Enabling Technology for Advanced Silicon Microstructuring
DOI:10.1002/adfm.201102124 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:19 AU: Bassu, Margherita;Surdo, Salvatore;Strambini, Lucanos Marsilio;Barillaro, Giuseppe;
12:136:5 Near infrared image sensor with integrated germanium photodiodes
DOI:10.1063/1.3608245 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Kaufmann, R.;Isella, G.;Sanchez-Amores, A.;Neukom, S.;Neels, A.;Neumann, L.;Brenzikofer, A.;Dommann, A.;Urban, C.;von Kaenel, H.;
12:136:6 Controlling the silicon nanowire tapering angle in dense arrays of silicon nanowires using deep reactive ion etching
DOI:10.1116/1.4793500 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Engstrom, Daniel S.;Soh, Yeong-Ah;
12:136:7 An all-silicon optical platform based on linear array of vertical high-aspect-ratio silicon/air photonic crystals
DOI:10.1063/1.4826146 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Surdo, Salvatore;Carpignano, Francesca;Silva, Gloria;Merlo, Sabina;Barillaro, Giuseppe;
12:136:8 Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits
DOI:10.1063/1.4862324 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Baik, Chan-Wook;Ahn, Ho Young;Kim, Yongsung;Lee, Jooho;Hong, Seogwoo;Choi, Jun Hee;Kim, Sunil;Lee, Sang Hun;Jun, So Yeon;Yu, SeGi;Ives, R. Lawrence;Kim, Jong Min;Hwang, Sungwoo;
12:136:9 Correction of aspect ratio dependent etch disparities
DOI:10.1116/1.4890004 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Bates, Robert L.;Goeckner, Matthew J.;Overzet, Lawrence. J.;
12:136:10 Kinetics of the deposition step in time multiplexed deep silicon etches
DOI:10.1116/1.4769873 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Saraf, Iqbal R.;Goeckner, Matthew J.;Goodlin, Brian E.;Kirmse, Karen H. R.;Nelson, Caleb T.;Overzet, Lawrence J.;
12:136:11 Optical properties of one-dimensional photonic crystals fabricated by photo-electrochemical etching of silicon
DOI:10.1007/s00339-009-5469-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:11 AU: Astrova, E. V.;Tolmachev, V. A.;Fedulova, G. V.;Melnikov, V. A.;Ankudinov, A. V.;Perova, T. S.;
12:136:12 Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations
DOI:10.1063/1.4745774 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Baik, Chan-Wook;Hong, Seogwoo;Kim, Jongseok;Ahn, Ho Young;Choi, Jun Hee;Il Kim, Sun;Lee, Jooho;Kim, Yongsung;Kim, Jong Min;Hwang, Sungwoo;Jun, So Yeon;Yu, SeGi;
12:136:13 Silicon etch using SF6/C4F8/Ar gas mixtures
DOI:10.1116/1.4880800 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Bates, Robert L.;Thamban, P. L. Stephan;Goeckner, Matthew J.;Overzet, Lawrence. J.;
12:136:14 Fabrication of nanowires with high aspect ratios utilized by dry etching with SF(6):C(4)F(8) and self-limiting thermal oxidation on Si substrate
DOI:10.1116/1.3455498 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Park, Si-Young;Di Giacomo, Sandro J.;Anisha, R.;Berger, Paul R.;Thompson, Phillip E.;Adesida, Ilesanmi;
12:136:15 Fabrication of nickel diffractive phase elements for x-ray microscopy at 8 keV photon energy
DOI:10.1116/1.3700440 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Grenci, Gianluca;Pozzato, Alessandro;Sovernigo, Enrico;Prasciolu, Mauro;Tormen, Massimo;
12:136:16 Realization of suspended silicon-based structures using a smart three-dimensional etching method
DOI:10.1116/1.4898576 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Mazraati, Hamid;Gharooni, Milad;Darbari, Sara;Mohajerzadeh, Shams;Salehi, Fatemeh;
12:136:17 Silicon-based light emitting diodes on silicon and glass substrates using a low temperature multilayered nanocrystalline structure
DOI:10.1016/j.tsf.2012.03.033 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Darbari, S.;Karbassian, F.;Mohajerzadeh, S.;Abdi, Y.;Robertson, M.;Bluteau, M.;Morrison, T.;
12:136:18 3D heteroepitaxy of mismatched semiconductors on silicon
DOI:10.1016/j.tsf.2013.10.094 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Falub, Claudiu V.;Kreiliger, Thomas;Isa, Fabio;Taboada, Alfonso G.;Meduna, Mojmir;Pezzoli, Fabio;Bergamaschini, Roberto;Marzegalli, Anna;Mueller, Elisabeth;Chrastina, Daniel;Isella, Giovanni;Neels, Antonia;Niedermann, Philippe;Dommann, Alex;Miglio, Leo;von Kaenel, Hans;
12:136:19 Electro-optically switched compact coupled photonic crystal waveguide directional coupler
DOI:10.1063/1.3330927 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Zablocki, Mathew J.;Sharkawy, Ahmed;Ebil, Ozgenc;Shi, Shouyuan;Prather, Dennis;
12:136:20 Experimental study of multichromatic terahertz wave propagation through planar micro-channels
DOI:10.1063/1.3698362 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Shin, Young-Min;Baig, Anisullah;Barchfeld, Robert;Gamzina, Diana;Barnett, Larry R.;Luhmann, Neville C., Jr.;
12:136:21 Characteristics of silicon etching by silicon chloride ions
DOI:10.1116/1.4793426 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:6 AU: Ito, Tomoko;Karahashi, Kazuhiro;Kang, Song-Yun;Hamaguchi, Satoshi;
12:136:22 Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry
DOI:10.1116/1.4885500 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Ouyang, Zihao;Ruzic, D. N.;Kiehlbauch, Mark;Schrinsky, Alex;Torek, Kevin;
12:136:23 Finite-element simulation models and experimental verification for through-silicon-via etching: Bosch process and single-step etching
DOI:10.1116/1.4882215 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Ouyang, Zihao;Xu, Wenyu;Ruzic, D. N.;Kiehlbauch, Mark;Schrinsky, Alex;Torek, Kevin;
12:136:24 Structural evolution in nanoporous anodic aluminium oxide
DOI:10.1016/j.matchemphys.2012.03.088 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Rocca, Emmanuel;Vantelon, Delphine;Reguer, Solenn;Mirambet, Francois;
12:137:1 Double embedded photonic crystals for extraction of guided light in light-emitting diodes
DOI:10.1063/1.4705735 JN:APPLIED PHYSICS LETTERS PY:2012
TC:30 AU: Jewell, Jason;Simeonov, Dobri;Huang, Shih-Chieh;Hu, Yan-Ling;Nakamura, Shuji;Speck, James;Weisbuch, Claude;
12:137:2 Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
DOI:10.1063/1.3554417 JN:APPLIED PHYSICS LETTERS PY:2011
TC:36 AU: Rangel, Elizabeth;Matioli, Elison;Choi, Yong-Seok;Weisbuch, Claude;Speck, James S.;Hu, Evelyn L.;
12:137:3 Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
DOI:10.1063/1.4775373 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Chen, Cheng-Chang;Chiu, Ching-Hsueh;Chang, Shih-Pang;Shih, M. H.;Kuo, Ming-Yen;Huang, Ji-Kai;Kuo, Hao-Chung;Chen, Shih-Pu;Lee, Li-Ling;Jeng, Ming-Shan;
12:137:4 High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
DOI:10.1063/1.3293442 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: Matioli, Elison;Rangel, Elizabeth;Iza, Micheal;Fleury, Blaise;Pfaff, Nathan;Speck, James;Hu, Evelyn;Weisbuch, Claude;
12:137:5 Emission aperture size limited the guided mode extraction characteristics of GaN-based ultrathin-film photonic crystal micro-light-emitting diodes
DOI:10.1063/1.4734509 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Lai, Chun-Feng;
12:137:6 Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes
DOI:10.1063/1.3309837 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Matioli, Elison;Fleury, Blaise;Rangel, Elizabeth;Hu, Evelyn;Speck, James;Weisbuch, Claude;
12:137:7 Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection
DOI:10.1063/1.3549730 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Matioli, Elison;Weisbuch, Claude;
12:137:8 Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes
DOI:10.1063/1.4867401 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Yuan, Gangcheng;Chen, Xinjuan;Yu, Tongjun;Lu, Huimin;Chen, Zhizhong;Kang, Xiangning;Wu, Jiejun;Zhang, Guoyi;
12:137:9 InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes
DOI:10.1364/OME.3.001952 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Yu, Chun-Ta;Lai, Wei-Chih;Yen, Cheng-Hsiung;Chang, Shoou-Jinn;
12:137:10 GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures
DOI:10.1063/1.3481692 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Lai, Wei-Chih;Yang, Ya-Yu;Peng, Li-Chi;Yang, Shih-Wei;Lin, Yu-Ru;Sheu, Jinn-Kong;
12:137:11 Pattern transfer of nanostructures onto glass using nanoimprint films
DOI:10.1016/j.matlet.2012.09.062 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Lee, Chia-Lung;Mihara, Toshiyuki;Yamashita, Masaru;Akai, Tomoko;
12:137:12 Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
DOI:10.1063/1.3480421 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Rangel, Elizabeth;Matioli, Elison;Chen, Hung-Tse;Choi, Yong-Seok;Weisbuch, Claude;Speck, James S.;Hu, Evelyn L.;
12:137:13 Conical air prism arrays as an embedded reflector for high efficient InGaN/GaN light emitting diodes
DOI:10.1063/1.4773559 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lysak, Volodymyr V.;Kang, Ji Hye;Hong, Chang-Hee;
12:137:14 InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles
DOI:10.1007/s00339-011-6349-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:2 AU: Gong, Z.;Zhang, Y. F.;Kelm, P.;Watson, I. M.;Gu, E.;Dawson, M. D.;
12:138:1:1 From Hydrodynamic Plumes to Chemical Gardens: The Concentration-Dependent Onset of Tube Formation
DOI:10.1021/la5020175 JN:LANGMUIR PY:2014
TC:7 AU: Batista, Bruno C.;Cruz, Patrick;Steinbock, Oliver;
12:138:1:2 Chemical-Garden Formation, Morphology, and Composition. I. Effect of the Nature of the Cations
DOI:10.1021/la104192y JN:LANGMUIR PY:2011
TC:17 AU: Cartwright, Julyan H. E.;Escribano, Bruno;Ignacio Sainz-Diaz, C.;
12:138:1:3 Characterization of Iron-Phosphate-Silicate Chemical Garden Structures
DOI:10.1021/la203727g JN:LANGMUIR PY:2012
TC:16 AU: Barge, Laura M.;Doloboff, Ivria J.;White, Lauren M.;Stucky, Galen D.;Russell, Michael J.;Kanik, Isik;
12:138:1:4 Self-Organized Tubular Structures as Platforms for Quantum Dots
DOI:10.1021/ja501941d JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:2 AU: Makki, Rabih;Ji, Xin;Mattoussi, Hedi;Steinbock, Oliver;
12:138:1:5 Chemical-Garden Formation, Morphology, and Composition. II. Chemical Gardens in Microgravity
DOI:10.1021/la104193q JN:LANGMUIR PY:2011
TC:12 AU: Cartwright, Julyan H. E.;Escribano, Bruno;Ignacio Sainz-Diaz, C.;Stodieck, Louis S.;
12:138:1:6 Brinicles as a Case of Inverse Chemical Gardens
DOI:10.1021/la4009703 JN:LANGMUIR PY:2013
TC:11 AU: Cartwright, Julyan H. E.;Escribano, Bruno;Gonzalez, Diego L.;Ignacio Sainz-Diaz, C.;Tuval, Idan;
12:138:1:7 Synthesis and characterization of Fe(III)-silicate precipitation tubes
DOI:10.1016/j.materresbull.2010.05.003 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:5 AU: Parmar, K.;Pramanik, A. K.;Bandyopadhya, N. R.;Bhattacharjee, S.;
12:138:2:1 Liesegang Rings Engineered from Charged Nanoparticles
DOI:10.1021/ja906890v JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:17 AU: Lagzi, Istvan;Kowalczyk, Bartlomiej;Grzybowski, Bartosz A.;
12:138:2:2 Gallium nitride porous microtubules self-assembled from wurtzite nanorods
DOI:10.1016/j.jcrysgro.2014.12.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Lan, Yucheng;Lin, Feng;Li, Yang;Dias, Yasmin;Wang, Hui;Liu, Yuan;Yang, Zhen;Zhou, Haiqing;Lu, Yalin;Bao, Jiming;Ren, Zhifeng;Crimp, Martin A.;
12:138:2:3 Nanoporous gallium nitride square microtubes
DOI:10.1007/s10853-013-7590-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:1 AU: Lan, Yucheng;Wang, Hui;Lin, Feng;Lu, Yalin;Li, Yang;Liu, Yuan;Bao, Jiming;Ren, Zhifeng;Crimp, Martin A.;
12:138:2:4 Controlling and Engineering Precipitation Patterns
DOI:10.1021/la2049025 JN:LANGMUIR PY:2012
TC:10 AU: Lagzi, Istvan;
12:138:2:5 Liesegang Patterns Engineered by a Chemical Reaction Assisted by Complex Formation
DOI:10.1021/la5003786 JN:LANGMUIR PY:2014
TC:1 AU: Nabika, Hideki;Sato, Mami;Unoura, Kei;
12:138:2:6 Spiral Alignment of Fullerene Microcrystals via Dewetting
DOI:10.1080/15421406.2011.566063 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2011
TC:5 AU: Suzuki, Kosuke;Yamaguchi, Tomohiko;
12:138:3:1 Nonequilibrium Synthesis of Silica-Supported Magnetite Tubes and Mechanical Control of Their Magnetic Properties
DOI:10.1021/ja3064843 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:5 AU: Makki, Rabih;Steinbock, Oliver;
12:138:3:2 Branched Silicon Nanotubes and Metal Nanowires via AAO-Template-Assistant Approach
DOI:10.1002/adfm.201001190 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:21 AU: Chen, Bensong;Xu, Qiaoling;Zhao, Xianglong;Zhu, Xiaoguang;Kong, Mingguang;Meng, Guowen;
12:138:3:3 Osmotically Driven Crystal Morphogenesis: A General Approach to the Fabrication of Micrometer-Scale Tubular Architectures Based on Polyoxometalates
DOI:10.1021/ja111011j JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:29 AU: Cooper, Geoffrey J. T.;Boulay, Antoine G.;Kitson, Philip J.;Ritchie, Chris;Richmond, Craig J.;Thiel, Johannes;Gabb, David;Eadie, Roslyn;Long, De-Liang;Cronin, Leroy;
12:138:3:4 Real-Time Ion-Flux Imaging in the Growth of Micrometer-Scale Structures and Membranes
DOI:10.1002/adma.201104345 JN:ADVANCED MATERIALS PY:2012
TC:7 AU: Nemeth, Balazs;Symes, Mark D.;Boulay, Antoine G.;Busche, Christoph;Cooper, Geoffrey J. T.;Cumming, David R. S.;Cronin, Leroy;
12:138:4:1 Propagating Fronts and Morphological Instabilities in a Precipitation Reaction
DOI:10.1021/la500707b JN:LANGMUIR PY:2014
TC:1 AU: Duzs, Brigitta;Lagzi, Istvan;Szalai, Istvan;
12:138:4:2 Speeding up of Sedimentation under Confinement
DOI:10.1103/PhysRevLett.110.178302 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:3 AU: Heitkam, S.;Yoshitake, Y.;Toquet, F.;Langevin, D.;Salonen, A.;
12:138:4:3 Critical Onset of Layering in Sedimenting Suspensions of Nanoparticles
DOI:10.1103/PhysRevLett.112.188301 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Butenko, A. V.;Nanikashvili, P. M.;Zitoun, D.;Sloutskin, E.;
12:138:4:4 The sedimentation of fine particles in liquid foams
DOI:10.1039/c0sm00028k JN:SOFT MATTER PY:2010
TC:3 AU: Rouyer, Florence;Fritz, Christelle;Pitois, Olivier;
12:138:4:5 Probability of the Emergence of Helical Precipitation Patterns in the Wake of Reaction-Diffusion Fronts
DOI:10.1103/PhysRevLett.110.078303 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:12 AU: Thomas, Shibi;Lagzi, Istvan;Molnar, Ferenc, Jr.;Racz, Zoltan;
12:138:5:1 Mesoscopic Study of the Effects of Gel Concentration and Materials on the Formation of Precipitation Patterns
DOI:10.1021/la3020095 JN:LANGMUIR PY:2012
TC:15 AU: Chen, Li;Kang, Qinjun;He, Ya-Ling;Tao, Wen-Quan;
12:138:5:2 Rhythmic Crystal Growth into Hierarchical Patterns by Polymer-Mediated Self-Assembly
DOI:10.1002/smll.201001432 JN:SMALL PY:2011
TC:3 AU: Pernstich, Kurt P.;Gines, Rebekka;Caseri, Walter R.;
12:139:1 Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
DOI:10.1063/1.3305336 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Corfdir, P.;Lefebvre, P.;Balet, L.;Sonderegger, S.;Dussaigne, A.;Zhu, T.;Martin, D.;Ganiere, J. -D.;Grandjean, N.;Deveaud-Pledran, B.;
12:139:2 Electronic and optical properties of nonpolar a-plane GaN quantum wells
DOI:10.1103/PhysRevB.82.125318 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Schulz, S.;Badcock, T. J.;Moram, M. A.;Dawson, P.;Kappers, M. J.;Humphreys, C. J.;O'Reilly, E. P.;
12:139:3 GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range
DOI:10.1063/1.3654053 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Kahouli, A.;Kriouche, N.;Brault, J.;Damilano, B.;Vennegues, P.;de Mierry, P.;Leroux, M.;Courville, A.;Tottereau, O.;Massies, J.;
12:139:4 Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
DOI:10.1103/PhysRevB.83.245326 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Corfdir, P.;Levrat, J.;Dussaigne, A.;Lefebvre, P.;Teisseyre, H.;Grzegory, I.;Suski, T.;Ganiere, J. -D.;Grandjean, N.;Deveaud-Pledran, B.;
12:139:5 Excitons in nitride heterostructures: From zero- to one-dimensional behavior
DOI:10.1103/PhysRevB.88.125437 JN:PHYSICAL REVIEW B PY:2013
TC:7 AU: Rosales, D.;Bretagnon, T.;Gil, B.;Kahouli, A.;Brault, J.;Damilano, B.;Massies, J.;Durnev, M. V.;Kavokin, A. V.;
12:139:6 Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
DOI:10.1063/1.3607301 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Joenen, H.;Rossow, U.;Bremers, H.;Hoffmann, L.;Brendel, M.;Draeger, A. D.;Schwaiger, S.;Scholz, F.;Thalmair, J.;Zweck, J.;Hangleiter, A.;
12:139:7 Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
DOI:10.1063/1.4865959 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Rosales, D.;Gil, B.;Bretagnon, T.;Guizal, B.;Zhang, F.;Okur, S.;Monavarian, M.;Izyumskaya, N.;Avrutin, V.;Ozguer, Ue;Morkoc, H.;Leach, J. H.;
12:139:8 Estimation of the internal electric field inside (11-22) semipolar GaN/Al0.5Ga0.5N nanostructures and the radiative efficiency at low temperature
DOI:10.1063/1.4876446 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kahouli, Abdelkarim;Kriouche, Nasser;
12:139:9 Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
DOI:10.1063/1.4731730 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Badcock, T. J.;Hao, R.;Moram, M. A.;Kappers, M. J.;Dawson, P.;Oliver, R. A.;Humphreys, C. J.;
12:139:10 Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
DOI:10.1063/1.3681816 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Corfdir, P.;Dussaigne, A.;Teisseyre, H.;Suski, T.;Grzegory, I.;Lefebvre, P.;Giraud, E.;Ganiere, J. -D.;Grandjean, N.;Deveaud-Pledran, B.;
12:139:11 Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells
DOI:10.1063/1.4894513 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Rosales, D.;Gil, B.;Bretagnon, T.;Guizal, B.;Izyumskaya, N.;Monavarian, M.;Zhang, F.;Okur, S.;Avrutin, V.;Oezguer, Ue.;Morkoc, H.;
12:139:12 Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
DOI:10.1063/1.4868692 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Kundys, D.;Schulz, S.;Oehler, F.;Sutherland, D.;Badcock, T. J.;Dawson, P.;Kappers, M. J.;Oliver, R. A.;Humphreys, C. J.;
12:139:13 Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC
DOI:10.1063/1.3702786 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Joenen, H.;Bremers, H.;Langer, T.;Rossow, U.;Hangleiter, A.;
12:139:14 Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells
DOI:10.1063/1.4890029 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Radosavljevic, S.;Radovanovic, J.;Milanovic, V.;Tomic, S.;
12:139:15 Optimization of InAs/AlInAs quantum wells based up-converter for silicon solar cells
DOI:10.1063/1.3641977 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Prodanovic, Nikola;Radovanovic, Jelena;Milanovic, Vitomir;Tomic, Stanko;
12:140:1 The K2S2O8-KOH photoetching system for GaN
DOI:10.1016/j.jcrysgro.2010.04.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:19 AU: Weyher, J. L.;Tichelaar, F. D.;van Dorp, D. H.;Kelly, J. J.;Khachapuridze, A.;
12:140:2 Revealing extended defects in HVPE-grown GaN
DOI:10.1016/j.jcrysgro.2010.04.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Weyher, J. L.;Lucznik, B.;Grzegory, I.;Smalc-Koziorowska, J.;Paskova, T.;
12:140:3 Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications
DOI:10.1039/c0jm03336g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:19 AU: Kaminska, Agnieszka;Dziecielewski, Igor;Weyher, Jan L.;Waluk, Jacek;Gawinkowski, Sylwester;Sashuk, Volodymyr;Fialkowski, Marcin;Sawicka, Marta;Suski, Tadeusz;Porowski, Sylwester;Holyst, Robert;
12:140:4 Growth and strain characterization of high quality GaN crystal by HVPE
DOI:10.1016/j.jcrysgro.2011.12.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:28 AU: Geng, Huiyuan;Sunakawa, Haruo;Sumi, Norihiko;Yamamoto, Kazutomi;Yamaguchi, A. Atsushi;Usui, Akira;
12:140:5 HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
DOI:10.1016/j.jcrysgro.2014.02.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:11 AU: Sochacki, Tomasz;Bryan, Zachary;Amilusik, Mikolaj;Bobea, Milena;Fijalkowski, Michal;Bryan, Isaac;Lucznik, Boleslaw;Collazo, Ramon;Weyher, Jan L.;Kucharski, Robert;Grzegory, Izabella;Bockowski, Michal;Sitar, Zlatko;
12:140:6 Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange
DOI:10.1016/j.jcrysgro.2014.06.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Weyher, J. L.;Sochacki, T.;Amilusik, M.;Fijalkowski, M.;Lucznik, B.;Jakiela, R.;Staszczak, G.;Nikolenko, A.;Strelchuk, V.;Sadovyi, B.;Bockowski, M.;Grzegory, I.;
12:140:7 Photo-etching of GaN: Revealing nano-scale non-homogeneities
DOI:10.1016/j.jcrysgro.2015.05.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Weyher, J. L.;Smalc-Koziorowska, J.;Bankowska, M.;Dziecielewski, I.;Marona, L.;Perlin, P.;
12:140:8 Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.10.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Lipski, F.;Klein, M.;Yao, X.;Scholz, F.;
12:140:9 Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask
DOI:10.1016/j.jcrysgro.2013.06.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Amilusik, M.;Sochacki, T.;Lucznik, B.;Bockowski, M.;Sadovyi, B.;Presz, A.;Dziecielewski, I.;Grzegory, I.;
12:140:10 Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.03.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Su, X. J.;Xu, K.;Ren, G. Q.;Wang, J. F.;Xu, Y.;Zeng, X. H.;Zhang, J. C.;Cai, D. M.;Zhou, T. F.;Liu, Z. H.;Yang, H.;
12:140:11 Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching
DOI:10.1016/j.jcrysgro.2012.04.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Nowak, G.;Weyher, J. L.;Khachapuridze, A.;Grzegory, I.;
12:140:12 The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth
DOI:10.1063/1.4895068 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Klein, M.;Meisch, T.;Lipski, F.;Scholz, F.;
12:140:13 Spectroscopic study of semipolar (11(2)over-bar2)-HVPE GaN exhibiting high oxygen incorporation
DOI:10.1063/1.4900602 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Schustek, Philipp;Hocker, Matthias;Klein, Martin;Simon, Ulrich;Scholz, Ferdinand;Thonke, Klaus;
12:140:14 Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds
DOI:10.1016/j.jcrysgro.2014.09.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Sochacki, T.;Amilusik, M.;Fijalkowski, M.;Lucznik, B.;Weyher, J. L.;Grzegory, I.;Kucharski, R.;Iwinska, M.;Bockowski, M.;
12:140:15 HVPE-GaN growth on misoriented ammonothermal GaN seeds
DOI:10.1016/j.jcrysgro.2014.06.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Sochacki, T.;Amilusik, M.;Lucznik, B.;Fijalkowski, M.;Weyher, J. L.;Nowak, G.;Sadovyi, B.;Kamler, G.;Kucharski, R.;Iwinska, M.;Grzegory, I.;Bockowski, M.;
12:140:16 Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN
DOI:10.1016/j.jcrysgro.2015.07.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Semmelroth, K.;Berwian, P.;Schroeter, C.;Leibiger, G.;Schoenleber, M.;Friedrich, J.;
12:140:17 Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.12.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Freitas, J. A., Jr.;Mastro, M. A.;Glaser, E. R.;Garces, N. Y.;Lee, S. K.;Chung, J. H.;Oh, D. K.;Shim, K. B.;
12:140:18 Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
DOI:10.1016/j.jcrysgro.2014.06.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Amilusik, M.;Sochacki, T.;Lucznik, B.;Fijalkowski, M.;Smalc-Koziorowska, J.;Weyher, J. L.;Teisseyre, H.;Sadovyi, B.;Bockowski, M.;Grzegory, I.;
12:140:19 Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
DOI:10.1016/j.jcrysgro.2010.04.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Freitas, J. A., Jr.;Mastro, M. A.;Imhoff, E. A.;Tadjer, M. J.;Eddy, C. R., Jr.;Kub, F. J.;
12:140:20 Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
DOI:10.1016/j.jcrysgro.2011.12.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Fujikura, Hajime;Oshima, Yuichi;Megro, Takeshi;Saito, Toshiya;
12:141:1 Phonon plasmon interaction in ternary group-III-nitrides
DOI:10.1063/1.4739415 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kirste, Ronny;Mohn, Stefan;Wagner, Markus R.;Reparaz, Juan S.;Hoffmann, Axel;
12:141:2 Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures
DOI:10.1063/1.4711210 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Renwick, P.;Tang, H.;Bai, J.;Wang, T.;
12:141:3 Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
DOI:10.1063/1.4770075 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Himwas, C.;Songmuang, R.;Dang, Le Si;Bleuse, J.;Rapenne, L.;Sarigiannidou, E.;Monroy, E.;
12:141:4 Influence of phonons on the temperature dependence of the band gap of AlN and AlxGa1-xN alloys with high AlN mole fraction
DOI:10.1063/1.4784170 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Sohal, S.;Feng, W.;Pandikunta, M.;Kuryatkov, V. V.;Nikishin, S. A.;Holtz, M.;
12:141:5 Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
DOI:10.1063/1.4887140 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Himwas, C.;den Hertog, M.;Bellet-Amalric, E.;Songmuang, R.;Donatini, F.;Dang, Le Si;Monroy, E.;
12:141:6 Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
DOI:10.1016/j.jcrysgro.2009.10.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:16 AU: Ling, Shih-Chun;Chao, Chu-Li;Chen, Jun-Rong;Liu, Po-Chun;Ko, Tsung-Shine;Lu, Tien-Chang;Kuo, Hao-Chung;Wang, Shing-Chung;Cheng, Shun-Jen;Tsay, Jenq-Dar;
12:141:7 Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%
DOI:10.1016/j.jcrysgro.2010.08.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Lee, JaeWon;Tak, Youngjo;Kim, Jun-Youn;Hong, Hyun-Gi;Chae, Suhee;Min, Bokki;Jeong, Hyungsu;Yoo, Jinwoo;Kim, Jong-Ryeol;Park, Youngsoo;
12:141:8 Phonon-assisted luminescence of polar semiconductors: Frohlich coupling versus deformation-potential scattering
DOI:10.1103/PhysRevB.85.035201 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Chernikov, A.;Bornwasser, V.;Koch, M.;Chatterjee, S.;Boettge, C. N.;Feldtmann, T.;Kira, M.;Koch, S. W.;Wassner, T.;Lautenschlaeger, S.;Meyer, B. K.;Eickhoff, M.;
12:141:9 InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks
DOI:10.1063/1.3658803 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Xing, K.;Gong, Y.;Bai, J.;Wang, T.;
12:141:10 Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency
DOI:10.1116/1.3678208 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:6 AU: Zhang, Wei;Nikiforov, A. Yu.;Thomidis, C.;Woodward, J.;Sun, H.;Kao, Chen-Kai;Bhattarai, D.;Moldawer, A.;Zhou, L.;Smith, D. J.;Moustakas, T. D.;
12:141:11 Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness
DOI:10.1063/1.4730438 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Huang, Huei-Min;Chang, Chiao-Yun;Lan, Yu-Pin;Lu, Tien-Chang;Kuo, Hao-Chung;Wang, Shing-Chung;
12:141:12 Efficient reduction of defects in (11(2)under-bar0) non-polar and (11(2)under-bar2) semi-polar GaN grown on nanorod templates
DOI:10.1063/1.4795619 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Bai, J.;Gong, Y.;Xing, K.;Yu, X.;Wang, T.;
12:141:13 Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells
DOI:10.1063/1.4894371 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Llopis, Antonio;Pereira, Sergio M. S.;Watson, Ian M.;Neogi, Arup;
12:141:14 Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology
DOI:10.1063/1.3645044 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Rajanna, G.;Feng, W.;Sohal, S.;Kuryatkov, V. V.;Nikishin, S. A.;Bernussi, A. A.;Holtz, M.;
12:141:15 Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
DOI:10.1016/j.jcrysgro.2012.10.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Ma, Jun;Zhu, Xueliang;Wong, Ka Ming;Zou, Xinbo;Lau, Kei May;
12:141:16 Optical properties of AlxGa1-xN alloy
DOI:10.1063/1.3284956 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Takeuchi, Katsuki;Adachi, Sadao;Ohtsuka, Kohji;
12:141:17 Role of phonons in the optical properties of magnetron sputtered ZnO studied by resonance Raman and photoluminescence
DOI:10.1063/1.3475649 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Sohal, Sandeep;Alivov, Yahya;Fan, Zhaoyang;Holtz, Mark;
12:141:18 Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
DOI:10.1016/j.jcrysgro.2012.06.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Kim, Ji Hoon;Hwang, Sung-Min;Son, Ji-Su;Baik, Kwang Hyeon;Song, Keun Man;Park, Jung Ho;
12:141:19 Crack-free GaN deposition on Si substrate with temperature-graded AIN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells
DOI:10.1016/j.jcrysgro.2014.03.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Chen, Chih-Yen;Chang, Wen-Ming;Chung, Wei-Lun;Hsieh, Chieh;Liao, Che-Hao;Ting, Shao-Ying;Chen, Kuan-Yu;Kiang, Yean-Woei;Yang, C. C.;Su, Wei-Siang;Cheng, Yung-Chen;
12:142:1 Effects of strain on the band structure of group-III nitrides
DOI:10.1103/PhysRevB.90.125118 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Yan, Qimin;Rinke, Patrick;Janotti, Anderson;Scheffler, Matthias;Van de Walle, Chris G.;
12:142:2 Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
DOI:10.1063/1.3507289 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Yan, Qimin;Rinke, Patrick;Scheffler, Matthias;Van de Walle, Chris G.;
12:142:3 Light emission polarization properties of semipolar InGaN/GaN quantum well
DOI:10.1063/1.3327794 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: Huang, Hung-Hsun;Wu, Yuh-Renn;
12:142:4 Confinement effects on valence-subband character and polarization anisotropy in (11(2)over-bar2) semipolar InGaN/GaN quantum wells
DOI:10.1063/1.3702798 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Roberts, Christopher;Yan, Qimin;Miao, Mao-Sheng;Van de Walle, Chris G.;
12:142:5 Effects of strain on the electron effective mass in GaN and AlN
DOI:10.1063/1.4801520 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Dreyer, C. E.;Janotti, A.;Van de Walle, C. G.;
12:142:6 Light emission enhancement in blue InGaAlN/InGaN quantum well structures
DOI:10.1063/1.3657141 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Park, Seoung-Hwan;Moon, Yong-Tae;Han, Dae-Seob;Park, Joong Seo;Oh, Myeong-Seok;Ahn, Doyeol;
12:142:7 Optical polarization characteristics of m-plane InGaN/GaN quantum well structures and comparison with experiment
DOI:10.1063/1.4820409 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Park, Seoung-Hwan;Ahn, Doyeol;
12:142:8 Energy offset between valence band anti-crossing and optical polarization switching in semipolar InGaN quantum wells
DOI:10.1063/1.4809819 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Schade, L.;Schwarz, U. T.;
12:142:9 Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer
DOI:10.1063/1.4729880 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Chang, Yi-An;Chang, Jih-Yuan;Kuo, Yih-Ting;Kuo, Yen-Kuang;
12:142:10 Partial strain relaxation effects on polarization anisotropy of semipolar (11(2)over-bar2) InGaN/GaN quantum well structures
DOI:10.1063/1.4833277 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Park, Seoung-Hwan;Mishra, Dhaneshwar;Pak, Y. Eugene;Park, Chang Young;Yoo, Seung-Hyun;Cho, Yong-Hee;Shim, Mun-Bo;Hwang, Sangheum;Kim, Sungjin;
12:142:11 A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
DOI:10.1063/1.3524544 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Lu, I-Lin;Wu, Yuh-Renn;Singh, Jasprit;
12:142:12 Pressure-dependent reordering of valence band states in GaN/AlxGa1-xN quantum wells
DOI:10.1103/PhysRevB.85.035318 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Bardyszewski, W.;Lepkowski, S. P.;
12:142:13 Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers
DOI:10.1063/1.3498805 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Dang, Po-Yuan;Wu, Yuh-Renn;
12:142:14 Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal field
DOI:10.1063/1.4747841 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Park, Seoung-Hwan;Ahn, Doyeol;
12:142:15 High optical polarization ratio of semipolar (20(2)over-bar(1)over-bar)-oriented InGaN/GaN quantum wells and comparison with experiment
DOI:10.1063/1.4764316 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Park, Seoung-Hwan;Ahn, Doyeol;
12:143:1 Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers
DOI:10.1063/1.4816969 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Weidlich, P. H.;Schnedler, M.;Eisele, H.;Strauss, U.;Dunin-Borkowski, R. E.;Ebert, Ph;
12:143:2 Hydride vapor phase epitaxy of GaN boules using high growth rates
DOI:10.1016/j.jcrysgro.2010.04.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Richter, E.;Zeimer, U.;Hagedorn, S.;Wagner, M.;Brunner, F.;Weyers, M.;Traenkle, G.;
12:143:3 Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
DOI:10.1016/j.jcrysgro.2012.01.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Ali, M.;Romanov, A. E.;Suihkonen, S.;Svensk, O.;Sintonen, S.;Sopanen, M.;Lipsanen, H.;Nevedomsky, V. N.;Bert, N. A.;Odnoblyudov, M. A.;Bougrov, V. E.;
12:143:4 Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates
DOI:10.1007/s11664-013-2920-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Zhao, Z. D.;Wang, B.;Sui, Y. P.;Xu, W.;Li, X. L.;Yu, G. H.;
12:143:5 Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope
DOI:10.1103/PhysRevLett.108.135503 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:9 AU: Naresh-Kumar, G.;Hourahine, B.;Edwards, P. R.;Day, A. P.;Winkelmann, A.;Wilkinson, A. J.;Parbrook, P. J.;England, G.;Trager-Cowan, C.;
12:143:6 Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers
DOI:10.1063/1.4823474 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Weidlich, P. H.;Schnedler, M.;Eisele, H.;Dunin-Borkowski, R. E.;Ebert, Ph;
12:143:7 Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
DOI:10.1063/1.4813077 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Nagarajan, S.;Svensk, O.;Ali, M.;Naresh-Kumar, G.;Trager-Cowan, C.;Suihkonen, S.;Sopanen, M.;Lipsanen, H.;
12:143:8 Accurate electron channeling contrast analysis of dislocations in fine grained bulk materials
DOI:10.1016/j.scriptamat.2014.03.001 JN:SCRIPTA MATERIALIA PY:2014
TC:5 AU: Mansour, H.;Guyon, J.;Crimp, M. A.;Gey, N.;Beausir, B.;Maloufi, N.;
12:143:9 Meandering of overgrown v-shaped defects in epitaxial GaN layers
DOI:10.1063/1.4887372 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Weidlich, P. H.;Schnedler, M.;Portz, V.;Eisele, H.;Dunin-Borkowski, R. E.;Ebert, Ph.;
12:143:10 Hexagonal-based pyramid void defects in GaN and InGaN
DOI:10.1063/1.3679540 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Yankovich, A. B.;Kvit, A. V.;Li, X.;Zhang, F.;Avrutin, V.;Liu, H. Y.;Izyumskaya, N.;Oezguer, Ue;Morkoc, H.;Voyles, P. M.;
12:143:11 Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
DOI:10.1016/j.jcrysgro.2010.08.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Ali, M.;Romanov, A. E.;Suihkonen, S.;Svensk, O.;Torma, P. T.;Sopanen, M.;Lipsanen, H.;Odnoblyudov, M. A.;Bougrov, V. E.;
12:143:12 Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
DOI:10.1016/j.jcrysgro.2012.08.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Svensk, O.;Ali, M.;Riuttanen, L.;Torma, P. T.;Sintonen, S.;Suihkonen, S.;Sopanen, M.;Lipsanen, H.;
12:143:13 Approach for dislocation free GaN epitaxy
DOI:10.1016/j.jcrysgro.2010.07.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Hite, J. K.;Mastro, M. A.;Eddy, C. R., Jr.;
12:143:14 Hydrogen etching of GaN and its application to produce free-standing GaN thick films
DOI:10.1016/j.jcrysgro.2011.08.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Yeh, Yen-Hsien;Chen, Kuei-Ming;Wu, Yin-Hao;Hsu, Ying-Chia;Yu, Tzu-Yi;Lee, Wei-I;
12:143:15 Hydrogen etching on the surface of GaN for producing patterned structures
DOI:10.1016/j.jcrysgro.2010.10.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Yeh, Yen-Hsien;Chen, Kuei-Ming;Wu, Yin-Hao;Hsu, Ying-Chia;Lee, Wei-I;
12:143:16 Growth of GaN boules via vertical HVPE
DOI:10.1016/j.jcrysgro.2011.12.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Richter, E.;Gruender, M.;Netzel, C.;Weyers, M.;Traenkle, G.;
12:143:17 Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy
DOI:10.1016/j.mssp.2014.07.045 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Wang, Bin;Zhao, Zhide;Xu, Wei;Sui, Yanpin;Yu, Guanghui;
12:143:18 Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth
DOI:10.1016/j.jcrysgro.2012.04.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Kawamura, Takahiro;Kangawa, Yoshihiro;Kakimoto, Koichi;Suzuki, Yasuyuki;
12:143:19 Interruption-free growth of 10 mu m-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2015.05.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Chen, Y. A.;Kuo, C. H.;Wu, J. P.;Chang, C. W.;
12:143:20 Accurate electron channeling contrast analysis of dislocations in fine grained bulk materials (vol 84, pg 11, 2014)
DOI:10.1016/j.scriptamat.2014.07.001 JN:SCRIPTA MATERIALIA PY:2014
TC:1 AU: Mansour, H.;Guyon, J.;Crimp, M. A.;Gey, N.;Beausir, B.;Maloufi, N.;
12:144:1 Ballistic InAs Nanowire Transistors
DOI:10.1021/nl3040674 JN:NANO LETTERS PY:2013
TC:33 AU: Chuang, Steven;Gao, Qun;Kapadia, Rehan;Ford, Alexandra C.;Guo, Jing;Javey, Ali;
12:144:2 Observation of Degenerate One-Dimensional Sub-Bands in Cylindrical In As Nanowires
DOI:10.1021/nl203895x JN:NANO LETTERS PY:2012
TC:24 AU: Ford, Alexandra C.;Kumar, S. Bala;Kapadia, Rehan;Guo, Jing;Javey, Ali;
12:144:3 Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm
DOI:10.1063/1.4897496 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Fu, Mengqi;Pan, Dong;Yang, Yingjun;Shi, Tuanwei;Zhang, Zhiyong;Zhao, Jianhua;Xu, H. Q.;Chen, Qing;
12:144:4 Electron Transport in Multigate In(x)Ga1-x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature
DOI:10.1021/nl4038399 JN:NANO LETTERS PY:2014
TC:6 AU: Thathachary, Arun V.;Agrawal, Nidhi;Liu, Lu;Datta, Suman;
12:144:5 Magnetotransport Subband Spectroscopy in InAs Nanowires
DOI:10.1103/PhysRevLett.112.076801 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Vigneau, Florian;Prudkovkiy, Vladimir;Duchemin, Ivan;Escoffier, Walter;Caroff, Philippe;Niquet, Yann-Michel;Leturcq, Renaud;Goiran, Michel;Raquet, Bertrand;
12:144:6 Room Temperature Observation of Quantum Confinement in Single InAs Nanowires
DOI:10.1021/nl503809c JN:NANO LETTERS PY:2015
TC:2 AU: Halpern, Eliezer;Henning, Alex;Shtrikman, Hadas;Rurali, Riccardo;Cartoixa, Xavier;Rosenwaks, Yossi;
12:144:7 Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors
DOI:10.1021/nn5017567 JN:ACS NANO PY:2014
TC:3 AU: Razavieh, Ali;Mohseni, Parsian Katal;Jung, Kyooho;Mehrotra, Saumitra;Das, Saptarshi;Suslov, Sergey;Li, Xiuling;Klimeck, Gerhard;Janes, David B.;Appenzeller, Joerg;
12:144:8 Room-Temperature Ballistic Transport in III-Nitride Heterostructures
DOI:10.1021/nl504029r JN:NANO LETTERS PY:2015
TC:0 AU: Matioli, Elison;Palacios, Tomas;
12:144:9 Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs
DOI:10.1021/nl3025664 JN:NANO LETTERS PY:2012
TC:3 AU: Salazar, Ramon B.;Mehrotra, Saumitra R.;Klimeck, Gerhard;Singh, Navab;Appenzeller, Joerg;
12:145:1 Building Energy Storage Device on a Single Nanowire
DOI:10.1021/nl2017042 JN:NANO LETTERS PY:2011
TC:40 AU: Gowda, Sanketh R.;Reddy, Arava Lee La Mohana;Zhan, Xiaobo;Ajayan, Pulickel M.;
12:145:2 Electrothermal phenomena in zinc oxide nanowires and contacts
DOI:10.1063/1.4703935 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: LeBlanc, Saniya;Phadke, Sujay;Kodama, Takashi;Salleo, Alberto;Goodson, Kenneth E.;
12:145:3 Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
DOI:10.1063/1.4901907 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Neuschl, B.;Helbing, J.;Thonke, K.;Meisch, T.;Wang, J.;Scholz, F.;
12:145:4 Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
DOI:10.1063/1.3299257 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: Detchprohm, Theeradetch;Zhu, Mingwei;Li, Yufeng;Zhao, Liang;You, Shi;Wetzel, Christian;Preble, Edward A.;Paskova, Tanya;Hanser, Drew;
12:145:5 Polarization fields in III-nitride nanowire devices
DOI:10.1088/0957-4484/21/14/145205 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Mastro, Michael A.;Simpkins, Blake;Wang, George T.;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Hong-Youl;Ahn, Jaehui;Kim, Jihyun;
12:145:6 Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)
DOI:10.1063/1.4841555 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Stark, Christoph J. M.;Detchprohm, Theeradetch;Lee, S. C.;Jiang, Y. -B.;Brueck, S. R. J.;Wetzel, Christian;
12:145:7 Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode
DOI:10.1021/am300063j JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:3 AU: Radha, B.;Jayaraj, Deepak;Kulkarni, G. U.;Heun, Stefan;Ercolani, Daniele;Sorba, Lucia;
12:145:8 Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires
DOI:10.1063/1.3622145 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Simpkins, B. S.;Mastro, M. A.;Eddy, C. R., Jr.;Hite, J. K.;Pehrsson, P. E.;
12:145:9 Characterization of semi-polar GaN on GaAs substrates
DOI:10.1016/j.jcrysgro.2014.10.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Saengkaew, Phannee;Sanorpim, Sakuntam;Yordsri, Visittapong;Thanachayanont, Chanchana;Onabe, Kentaro;
12:145:10 Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiNx Layers
DOI:10.1007/s11664-010-1343-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:7 AU: Tadjer, Marko J.;Anderson, Travis J.;Hobart, Karl D.;Mastro, Michael A.;Hite, Jennifer K.;Caldwell, Joshua D.;Picard, Yoosuf N.;Kub, Fritz J.;Eddy, Charles R., Jr.;
12:145:11 Ti/Al Ohmic Contacts to n-Type GaN Nanowires
DOI:10.1155/2011/876287 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Ye, Gangfeng;Shi, Kelvin;Burke, Robert;Redwing, Joan M.;Mohney, Suzanne E.;
12:146:1 Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief Formed by Soft Imprint Lithography for Broad Band Absorption Enhancement
DOI:10.1021/nl101510q JN:NANO LETTERS PY:2010
TC:52 AU: Shir, Dan;Yoon, Jongseung;Chanda, Debashis;Ryu, Jae-Ha;Rogers, John A.;
12:146:2 High Efficiency Thin Upgraded Metallurgical-Grade Silicon Solar Cells on Flexible Substrates
DOI:10.1021/nl3020445 JN:NANO LETTERS PY:2012
TC:20 AU: Kwon, Jae Young;Lee, Duck Hyun;Chitambar, Michelle;Maldonado, Stephen;Tuteja, Anish;Boukai, Akram;
12:146:3 Printable Nanostructured Silicon Solar Cells for High-Performance, Large-Area Flexible Photovoltaics
DOI:10.1021/nn503884z JN:ACS NANO PY:2014
TC:6 AU: Lee, Sung-Min;Biswas, Roshni;Li, Weigu;Kang, Dongseok;Chan, Lesley;Yoon, Jongseung;
12:146:4 Extreme Light Absorption by Multiple Plasmonic Layers on Upgraded Metallurgical Grade Silicon Solar Cells
DOI:10.1021/nl4048064 JN:NANO LETTERS PY:2014
TC:6 AU: Lee, Duck Hyun;Kwon, Jae Young;Maldonado, Stephen;Tuteja, Anish;Boukai, Akram;
12:146:5 Light Trapping in Ultrathin Monocrystalline Silicon Solar Cells
DOI:10.1002/aenm.201300542 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:11 AU: Yu, Ki Jun;Gao, Li;Park, Jae Suk;Lee, Yu Ri;Corcoran, Christopher J.;Nuzzo, Ralph G.;Chanda, Debashis;Rogers, John A.;
12:146:6 Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping
DOI:10.1088/0957-4484/25/30/305301 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Xu, Zhida;Yao, Yuan;Brueckner, Eric P.;Li, Lanfang;Jiang, Jing;Nuzzo, Ralph G.;Liu, Gang Logan;
12:146:7 Broadband antireflection and absorption enhancement of ultrathin silicon solar microcells enabled with density-graded surface nanostructures
DOI:10.1063/1.4881260 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Chan, Lesley;Kang, Dongseok;Lee, Sung-Min;Li, Weigu;Hunter, Hajirah;Yoon, Jongseung;
12:146:8 Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures
DOI:10.1088/0957-4484/23/40/405203 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Hilali, Mohamed M.;Yang, Shuqiang;Miller, Mike;Xu, Frank;Banerjee, Sanjay;Sreenivasan, S. V.;
12:146:9 Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures (vol 23, 405203, 2012)
DOI:10.1088/0957-4484/24/37/379502 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Hilali, Mohamed M.;Yang, Shuqiang;Miller, Mike;Xu, Frank;Banerjee, Sanjay;Sreenivasan, S. V.;
12:147:1:1 Extraordinary infrared photoluminescence efficiency of Er0.1Yb1.9SiO5 films on SiO2/Si substrates
DOI:10.1063/1.3554750 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Wang, X. J.;Wang, B.;Wang, L.;Guo, R. M.;Isshiki, H.;Kimura, T.;Zhou, Z.;
12:147:1:2 Photoluminescence enhancement and high gain amplification of ErxY2-xSiO5 waveguide
DOI:10.1063/1.3446822 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:23 AU: Wang, X. J.;Yuan, G.;Isshiki, H.;Kimura, T.;Zhou, Z.;
12:147:1:3 Enhanced down conversion of photons emitted by photoexcited ErxY2-xSi2O7 films grown on silicon
DOI:10.1103/PhysRevB.81.041411 JN:PHYSICAL REVIEW B PY:2010
TC:21 AU: Miritello, Maria;Lo Savio, Roberto;Cardile, Paolo;Priolo, Francesco;
12:147:1:4 Energy transfer mechanisms in Er-Yb-Y disilicate thin films
DOI:10.1063/1.4730434 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Cardile, P.;Miritello, M.;Priolo, F.;
12:147:1:5 Long lifetime, high density single-crystal erbium compound nanowires as a high optical gain material
DOI:10.1063/1.4729412 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Yin, Leijun;Ning, Hao;Turkdogan, Sunay;Liu, Zhicheng;Nichols, Patricia L.;Ning, C. Z.;
12:147:1:6 Erbium concentration control and optimization in erbium yttrium chloride silicate single crystal nanowires as a high gain material
DOI:10.1063/1.4821448 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yin, Leijun;Shelhammer, David;Zhao, Gejian;Liu, Zhicheng;Ning, C. Z.;
12:147:1:7 Composition dependence of the Yb-participated strong up-conversions in polycrystalline ErYb silicate
DOI:10.1016/j.optmat.2012.02.001 JN:OPTICAL MATERIALS PY:2012
TC:3 AU: Wang, B.;Guo, R. M.;Wang, X. J.;Wang, L.;Zhou, Z.;
12:147:1:8 Influence of Bi on the Er luminescence in yttrium- erbium disilicate thin films
DOI:10.1063/1.4896495 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Scarangella, Adriana;Miritello, Maria;Priolo, Francesco;
12:147:2:1 Mixture formation of ErxYb2-xSi2O7 and ErxYb2-xO3 on Si for broadening the C-band in an optical amplifier
DOI:10.1063/1.4800714 JN:AIP ADVANCES PY:2013
TC:4 AU: Omi, Hiroo;Abe, Yoshiyuki;Anagnosti, Maria;Tawara, Takehiko;
12:147:2:2 Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates
DOI:10.1063/1.3687419 JN:AIP ADVANCES PY:2012
TC:4 AU: Omi, H.;Tawara, T.;Tateishi, M.;
12:147:2:3 Light emission from thulium silicates and oxides for optical amplifiers on silicon in the extended optical communications band
DOI:10.1063/1.4816717 JN:AIP ADVANCES PY:2013
TC:0 AU: Omi, Hiroo;Hagiwara, Atsushi;Tawara, Takehiko;
12:147:2:4 Simultaneous light emissions from erbium-thulium silicates and oxides on silicon in the second and third telecommunications bands
DOI:10.1364/OME.4.001747 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Anagnosti, Maria;Omi, Hiroo;Tawara, Takehiko;
12:147:2:5 Analyses of the ultraviolet spectra of Er3+ in Er2O3 and Er3+ in Y2O3
DOI:10.1063/1.3465615 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Gruber, John B.;Burdick, Gary W.;Chandra, Sreerenjini;Sardar, Dhiraj K.;
12:147:2:6 The effects of energy transfer on the Er3+ 1.54 mu m luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants
DOI:10.1063/1.4752754 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Hoang, J.;Schwartz, Robert N.;Wang, Kang L.;Chang, J. P.;
12:147:2:7 Crystalline-silicon-based infra-red LEDs and routes to laser diodes
DOI:10.1016/j.tsf.2011.05.020 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Lourenco, M. A.;Homewood, K. P.;
12:147:2:8 Er3+ interlayer energy migration as the limiting photoluminescence quenching factor in nanostructured Er3+:Y2O3 thin films
DOI:10.1063/1.4737793 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Hoang, J.;Schwartz, Robert N.;Wang, Kang L.;Chang, J. P.;
12:147:3:1 Large electroluminescence excitation cross section and strong potential gain of erbium in ErYb silicate
DOI:10.1063/1.4795153 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Wang, Bing;Guo, Ruimin;Wang, Xingjun;Wang, Lei;Yin, Bing;Zhou, Zhiping;
12:147:3:2 Optical amplification in Er/Yb silicate strip loaded waveguide
DOI:10.1063/1.3655330 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Guo, Ruimin;Wang, Xingjun;Zang, Kai;Wang, Bing;Wang, Lei;Gao, Linfei;Zhou, Zhiping;
12:147:3:3 Near-infrared electroluminescence in ErYb silicate based light-emitting device
DOI:10.1016/j.optmat.2012.02.026 JN:OPTICAL MATERIALS PY:2012
TC:3 AU: Wang, B.;Guo, R. M.;Wang, X. J.;Wang, L.;Hong, L. Y.;Yin, B.;Gao, L. F.;Zhou, Z.;
12:147:3:4 Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism
DOI:10.1016/j.jnoncrysol.2010.12.002 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:1 AU: Prucnal, S.;Rebohle, L.;Skorupa, W.;
12:147:3:5 Suppression of second-order cooperative up-conversion in Er/Yb silicate glass
DOI:10.1016/j.optmat.2012.11.017 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Guo, Ruimin;Wang, Bing;Wang, Xingjun;Wang, Lei;Jiang, Lingjun;Zhou, Zhiping;
12:148:1 Nature of deep center emissions in GaN
DOI:10.1063/1.3389497 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Sedhain, A.;Li, J.;Lin, J. Y.;Jiang, H. X.;
12:148:2 Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition
DOI:10.1021/nl4015205 JN:NANO LETTERS PY:2013
TC:16 AU: Xu, Shengrui;Hao, Yue;Zhang, Jincheng;Jiang, Teng;Yang, Linan;Lu, Xiaoli;Lin, Zhiyu;
12:148:3 Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films
DOI:10.1063/1.3294965 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:26 AU: Xu, F. J.;Shen, B.;Lu, L.;Miao, Z. L.;Song, J.;Yang, Z. J.;Zhang, G. Y.;Hao, X. P.;Wang, B. Y.;Shen, X. Q.;Okumura, H.;
12:148:4 Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.09.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:24 AU: Xu, S. R.;Hao, Y.;Zhang, J. C.;Cao, Y. R.;Zhou, X. W.;Yang, L. A.;Ou, X. X.;Chen, K.;Mao, W.;
12:148:5 Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure
DOI:10.1063/1.4712030 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Liu, Lilin;Ling, Minjie;Yang, Jianfu;Xiong, Wang;Jia, Weiqing;Wang, Gang;
12:148:6 Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
DOI:10.1063/1.3497082 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Meneghini, Matteo;Barbisan, Diego;Rodighiero, Luca;Meneghesso, Gaudenzio;Zanoni, Enrico;
12:148:7 Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition
DOI:10.1063/1.4894632 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Zhiyu;Zhang, Jincheng;Xu, Shengrui;Chen, Zhibin;Yang, Shuangyong;Tian, Kun;Su, Xujun;Shi, Xuefang;Hao, Yue;
12:148:8 Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2013.09.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Lin, Zhiyu;Zhang, Jincheng;Cao, Rongtao;Ha, Wei;Zhang, Shuai;Chen, Xing;Yan, Jingdong;Xu, Shengrui;Zhao, Yi;Li, Liang;Hao, Yue;
12:148:9 Controlling the yellow luminescence intensity from n-GaN during cathodoluminescence
DOI:10.1016/j.optmat.2010.09.003 JN:OPTICAL MATERIALS PY:2011
TC:3 AU: Dhamodaran, S.;
12:148:10 Trap states in AlGaN channel high-electron-mobility transistors
DOI:10.1063/1.4832482 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhao, ShengLei;Zhang, Kai;Ha, Wei;Chen, YongHe;Zhang, Peng;Zhang, JinCheng;Ma, XiaoHua;Hao, Yue;
12:148:11 Resonant Raman and FIIR spectra of carbon doped GaN
DOI:10.1016/j.jcysgro.2014.11.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Ito, S.;Kobayashi, H.;Araki, K.;Suzuki, K.;Sawaki, N.;Yamashita, K.;Honda, Y.;Amano, H.;
12:148:12 Aggravated efficiency droop in vertical-structured gallium nitride light-emitting diodes induced by high temperature aging
DOI:10.1063/1.4790594 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Liu, Lilin;Yang, Jianfu;Ling, Minjie;Zhong, Jianwei;Teng, Dongdong;Wang, Gang;
12:148:13 Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes
DOI:10.1063/1.4874631 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Park, Jae-Seong;Han, Jaecheon;Ha, Jun-Seok;Seong, Tae-Yeon;
12:149:1 Strong phase separation of strained InxGa1-xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
DOI:10.1103/PhysRevB.83.115316 JN:PHYSICAL REVIEW B PY:2011
TC:20 AU: Tessarek, C.;Figge, S.;Aschenbrenner, T.;Bley, S.;Rosenauer, A.;Seyfried, M.;Kalden, J.;Sebald, K.;Gutowski, J.;Hommel, D.;
12:149:2 InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering
DOI:10.1103/PhysRevLett.106.205501 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:14 AU: Serrano, J.;Bosak, A.;Krisch, M.;Manjon, F. J.;Romero, A. H.;Garro, N.;Wang, X.;Yoshikawa, A.;Kuball, M.;
12:149:3 Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
DOI:10.1016/j.jcrysgro.2013.03.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Pristovsek, Markus;Kadir, Abdul;Meissner, Christian;Schwaner, Tilman;Leyer, Martin;Stellmach, Joachim;Kneissl, Michael;Ivaldi, Francesco;Kret, Slawomir;
12:149:4 Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
DOI:10.1103/PhysRevB.86.014117 JN:PHYSICAL REVIEW B PY:2012
TC:9 AU: Caro, M. A.;Schulz, S.;O'Reilly, E. P.;
12:149:5 Wavelength limits for InGaN quantum wells on GaN
DOI:10.1063/1.4811560 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Pristovsek, Markus;
12:149:6 In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN
DOI:10.1063/1.3293441 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Richard, M. -I.;Highland, M. J.;Fister, T. T.;Munkholm, A.;Mei, J.;Streiffer, S. K.;Thompson, Carol;Fuoss, P. H.;Stephenson, G. B.;
12:149:7 Optical properties of InGaN quantum dots in monolithic pillar microcavities
DOI:10.1063/1.3456376 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Sebald, K.;Seyfried, M.;Kalden, J.;Gutowski, J.;Dartsch, H.;Tessarek, C.;Aschenbrenner, T.;Figge, S.;Kruse, C.;Hommel, D.;Florian, M.;Jahnke, F.;
12:149:8 Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
DOI:10.1063/1.3647782 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Pristovsek, Markus;Kadir, Abdul;Meissner, Christian;Schwaner, Tilman;Leyer, Martin;Kneissl, Michael;
12:149:9 Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.08.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Kadir, Abdul;Meissner, Christian;Schwaner, Tilman;Pristovsek, Markus;Kneissl, Michael;
12:149:10 Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K
DOI:10.1088/0957-4484/21/1/015204 JN:NANOTECHNOLOGY PY:2010
TC:21 AU: Kalden, J.;Tessarek, C.;Sebald, K.;Figge, S.;Kruse, C.;Hommel, D.;Gutowski, J.;
12:149:11 Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity
DOI:10.1016/j.jcrysgro.2010.12.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Dartsch, Heiko;Tessarek, Christian;Aschenbrenner, Timo;Figge, Stephan;Kruse, Carsten;Schowalter, Marco;Rosenauer, Andreas;Hommel, Detlef;
12:149:12 InGaN epilayer characterization by microfocused x-ray reciprocal space mapping
DOI:10.1063/1.3658619 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kachkanov, V.;Dolbnya, I. P.;O'Donnell, K. P.;Martin, R. W.;Edwards, P. R.;Pereira, S.;
12:149:13 Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
DOI:10.1063/1.4768442 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: El-Ella, Haitham A. R.;Collins, Daniel P.;Kappers, Menno J.;Taylor, Robert A.;Oliver, Rachel A.;
12:149:14 Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
DOI:10.1016/j.jcrysgro.2011.05.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Zhao, Wei;Wang, Lai;Wang, Jiaxing;Hao, Zhibiao;Luo, Yi;
12:149:15 Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides (vol 86, 014117, 2012)
DOI:10.1103/PhysRevB.86.099901 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Caro, M. A.;Schulz, S.;O'Reilly, E. P.;
12:149:16 Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
DOI:10.1007/s11664-010-1159-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Zeimer, U.;Jahn, U.;Hoffmann, V.;Weyers, M.;Kneissl, M.;
12:150:1 Template-Free Preparation of Crystalline Ge Nanowire Film Electrodes via an Electrochemical Liquid-Liquid-Solid Process in Water at Ambient Pressure and Temperature for Energy Storage
DOI:10.1021/nl301912f JN:NANO LETTERS PY:2012
TC:19 AU: Gu, Junsi;Collins, Sean M.;Carim, Azhar I.;Hao, Xiaoguang;Bartlett, Bart M.;Maldonado, Stephen;
12:150:2 Electrodeposited Germanium Nanowires
DOI:10.1021/nn503784d JN:ACS NANO PY:2014
TC:6 AU: Mahenderkar, Naveen K.;Liu, Ying-Chau;Koza, Jakub A.;Switzer, Jay A.;
12:150:3 Benchtop Electrochemical Liquid-Liquid-Solid Growth of Nanostructured Crystalline Germanium
DOI:10.1021/ja205299w JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:16 AU: Carim, Azhar I.;Collins, Sean M.;Foley, Justin M.;Maldonado, Stephen;
12:150:4 Growth of Ge Nanofilms Using Electrochemical Atomic Layer Deposition, with a "Bait and Switch" Surface-Limited Reaction
DOI:10.1021/ja109398t JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:7 AU: Liang, Xuehai;Zhang, Qinghui;Lay, Marcus D.;Stickney, John L.;
12:150:5 Direct Electrodeposition of Crystalline Silicon at Low Temperatures
DOI:10.1021/ja310897r JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:9 AU: Gu, Junsi;Fahrenkrug, Eli;Maldonado, Stephen;
12:150:6 Analysis of the Electrodeposition and Surface Chemistry of CdTe, CdSe, and CdS Thin Films through Substrate-Overlayer Surface-Enhanced Raman Spectroscopy
DOI:10.1021/la502403q JN:LANGMUIR PY:2014
TC:2 AU: Gu, Junsi;Fahrenkrug, Eli;Maldonado, Stephen;
12:150:7 Room-Temperature Epitaxial Electrodeposition of Single-Crystalline Germanium Nanowires at the Wafer Scale from an Aqueous Solution
DOI:10.1021/nl404228z JN:NANO LETTERS PY:2014
TC:7 AU: Fahrenkrug, Eli;Gu, Junsi;Jeon, Sunyeol;Veneman, P. Alexander;Goldman, Rachel S.;Maldonado, Stephen;
12:150:8 Overlayer Surface-Enhanced Raman Spectroscopy for Studying the Electrodeposition and Interfacial Chemistry of Ultrathin Ge on a Nanostructured Support
DOI:10.1021/nn102555u JN:ACS NANO PY:2011
TC:2 AU: Carim, Azhar I.;Gu, Junsi;Maldonado, Stephen;
12:150:9 Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes
DOI:10.1021/ja309476x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:3 AU: Fahrenkrug, Eli;Gu, Junsi;Maldonado, Stephen;
12:150:10 Aqueous Electrodeposition of Ge Monolayers
DOI:10.1021/la902929j JN:LANGMUIR PY:2010
TC:12 AU: Liang, Xuehai;Kim, Youn-Geun;Gebergziabiher, Daniel K.;Stickney, John L.;
12:150:11 Electrodeposition of a Pt Monolayer Film: Using Kinetic Limitations for Atomic Layer Epitaxy
DOI:10.1021/ja4051795 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:8 AU: Brimaud, Sylvain;Behm, R. Juergen;
12:150:12 Optical absorptions in AlxGa1-xAs/GaAs quantum well for solar energy application
DOI:10.1063/1.4749416 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Yang, X. F.;Liu, Y. S.;Fu, Y.;
12:150:13 Formation of Single-Layered Pt Islands on Au(111) Using Irreversible Adsorption of Pt and Selective Adsorption of CO to Pt
DOI:10.1021/la500005p JN:LANGMUIR PY:2014
TC:2 AU: Kim, Jandee;Shin, Dongwan;Rhee, Choong Kyun;Yoon, Seong-Ho;
12:150:14 Electrochemical Deposition of Subnanometer Ni Films on TiN
DOI:10.1021/la404852m JN:LANGMUIR PY:2014
TC:2 AU: Vanpaemel, Johannes;Sugiura, Masahito;Cuypers, Daniel;van der Veen, Marleen H.;De Gendt, Stefan;Vereecken, Philippe M.;
12:150:15 Photoreduction at a Distance: Facile, Nonlocal Photoreduction of Ag Ions in Solution by Plasmon-Mediated Photoemitted Electrons
DOI:10.1021/nl904173f JN:NANO LETTERS PY:2010
TC:10 AU: Lee, Seung Joon;Piorek, Brian D.;Meinhart, Carl D.;Moskovits, Martin;
12:151:1 p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
DOI:10.1063/1.3521388 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Hurni, Christophe A.;Bierwagen, Oliver;Lang, Jordan R.;McSkimming, Brian M.;Gallinat, Chad S.;Young, Erin C.;Browne, David A.;Mishra, Umesh K.;Speck, James S.;
12:151:2 NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.02.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Lang, J. R.;Speck, J. S.;
12:151:3 Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy
DOI:10.1063/1.4749262 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Corrion, A. L.;Wu, F.;Speck, J. S.;
12:151:4 Impact of proton irradiation on deep level states in n-GaN
DOI:10.1063/1.4816423 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Zhang, Z.;Arehart, A. R.;Cinkilic, E.;Chen, J.;Zhang, E. X.;Fleetwood, D. M.;Schrimpf, R. D.;McSkimming, B.;Speck, J. S.;Ringel, S. A.;
12:151:5 High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
DOI:10.1063/1.4874735 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Kyle, Erin C. H.;Kaun, Stephen W.;Burke, Peter G.;Wu, Feng;Wu, Yuh-Renn;Speck, James S.;
12:151:6 Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
DOI:10.1063/1.4759037 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Zhang, Z.;Hurni, C. A.;Arehart, A. R.;Speck, J. S.;Ringel, S. A.;
12:151:7 Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
DOI:10.1063/1.4751108 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Hurni, Christophe A.;Lang, Jordan R.;Burke, Peter G.;Speck, James S.;
12:151:8 Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
DOI:10.1063/1.3682528 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Zhang, Z.;Hurni, C. A.;Arehart, A. R.;Yang, J.;Myers, R. C.;Speck, J. S.;Ringel, S. A.;
12:151:9 Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy
DOI:10.1063/1.3309778 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Arehart, A. R.;Poblenz, C.;Speck, J. S.;Ringel, S. A.;
12:151:10 m-plane (10(1)over-bar0) and (20(2)over-bar1) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling
DOI:10.1063/1.4903180 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hurni, Christophe A.;Kroemer, Herbert;Mishra, Umesh K.;Speck, James S.;
12:151:11 n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
DOI:10.1063/1.4902347 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lugani, L.;Malinverni, M.;Tirelli, S.;Marti, D.;Giraud, E.;Carlin, J. -F.;Bolognesi, C. R.;Grandjean, N.;
12:151:12 Magnetotransport properties of (In,Zn)As/InAs p-n junctions
DOI:10.1063/1.3576922 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Gao, K. H.;Wang, Q. W.;Yu, G.;Lin, T.;Deng, H. Y.;Dai, N.;Chu, J. H.;
12:151:13 Capacitance-voltage profiling on polar III-nitride heterostructures
DOI:10.1063/1.4757940 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Hurni, Christophe A.;Kroemer, Herbert;Mishra, Umesh K.;Speck, James S.;
12:152:1 Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures
DOI:10.1063/1.3463150 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Azize, M.;Palacios, T.;
12:152:2 Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
DOI:10.1063/1.4773511 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Tokuda, Hirokuni;Kojima, Toshikazu;Kuzuhara, Masaaki;
12:152:3 Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
DOI:10.1063/1.4894093 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhao, Jingtao;Lin, Zhaojun;Luan, Chongbiao;Zhou, Yang;Yang, Ming;Lv, Yuanjie;Feng, Zhihong;
12:152:4 Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4794009 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:13 AU: Choi, Sukwon;Heller, Eric;Dorsey, Donald;Vetury, Ramakrishna;Graham, Samuel;
12:152:5 Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate
DOI:10.1063/1.4774288 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Liu, H. F.;Dolmanan, S. B.;Zhang, L.;Chua, S. J.;Chi, D. Z.;Heuken, M.;Tripathy, S.;
12:152:6 Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
DOI:10.1063/1.4897338 JN:AIP ADVANCES PY:2014
TC:1 AU: Christy, Dennis;Watanabe, Arata;Egawa, Takashi;
12:152:7 A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
DOI:10.1063/1.4748169 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Tokuda, Hirokuni;Kojima, Toshikazu;Kuzuhara, Masaaki;
12:152:8 Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN
DOI:10.1063/1.3579252 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Kim, Dong Ho;Kim, Su Jin;Seo, Yu Jeong;Kim, Tae Geun;Hwang, Sung Min;
12:152:9 High-resolution X-ray diffraction analysis of AlxGa1-xN/InxGa1-xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
DOI:10.1063/1.4875382 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Jana, Sanjay Kumar;Mukhopadhyay, Partha;Ghosh, Saptarsi;Kabi, Sanjib;Bag, Ankush;Kumar, Rahul;Biswas, D.;
12:152:10 Structural and optical properties of AlxGa1-xN/GaN high electron mobility transistor structures grown on 200mm diameter Si(111) substrates
DOI:10.1116/1.4866429 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Bhat, Thirumaleshwara N.;Dolmanan, Surani B.;Dikme, Yilmaz;Tan, Hui R.;Bera, Lakshmi K.;Tripathy, Sudhiranjan;
12:152:11 Synthesis and Phase Evolutions in Layered Structure of Ga2S3 Semiconductor Thin Films on Epiready GaAs (111) Substrates
DOI:10.1021/am4056535 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Liu, H. F.;Antwi, K. K. Ansah;Yakovlev, N. L.;Tan, H. R.;Ong, L. T.;Chua, S. J.;Chi, D. Z.;
12:152:12 X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy
DOI:10.1063/1.3457149 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Tweedie, James;Collazo, Ramon;Rice, Anthony;Xie, Jinqiao;Mita, Seiji;Dalmau, Rafael;Sitar, Zlatko;
12:152:13 Top-down fabrication of AlGaN/GaN nanoribbons
DOI:10.1063/1.3544048 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Azize, M.;Palacios, T.;
12:152:14 Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
DOI:10.1063/1.4902090 JN:AIP ADVANCES PY:2014
TC:3 AU: Mahata, Mihir Kumar;Ghosh, Saptarsi;Jana, Sanjay Kumar;Chakraborty, Apurba;Bag, Ankush;Mukhopadhyay, Partha;Kumar, Rahul;Biswas, Dhrubes;
12:152:15 Ohmic contact to n-AlGaN through bonding state transition at TiAl interface
DOI:10.1063/1.4727848 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Zhang, Binbin;Lin, Wei;Li, Shuping;Zheng, Yu;Yang, Xu;Cai, Duanjun;Kang, Junyong;
12:153:1 Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals
DOI:10.1063/1.4809982 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:13 AU: Deinega, Alexei;Eyderman, Sergey;John, Sajeev;
12:153:2 Solar power conversion efficiency in modulated silicon nanowire photonic crystals
DOI:10.1063/1.4752776 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:17 AU: Deinega, Alexei;John, Sajeev;
12:153:3 Solar light trapping in slanted conical-pore photonic crystals: Beyond statistical ray trapping
DOI:10.1063/1.4802442 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:16 AU: Eyderman, Sergey;John, Sajeev;Deinega, Alexei;
12:153:4 Near perfect solar absorption in ultra-thin-film GaAs photonic crystals
DOI:10.1039/c3ta13655h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Eyderman, Sergey;Deinega, Alexei;John, Sajeev;
12:153:5 Solar energy trapping with modulated silicon nanowire photonic crystals
DOI:10.1063/1.4752775 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:21 AU: Demesy, Guillaume;John, Sajeev;
12:153:6 Using metallic photonic crystals as visible light sources
DOI:10.1103/PhysRevB.86.174201 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Belousov, Sergei;Bogdanova, Maria;Deinega, Alexei;Eyderman, Sergey;Valuev, Ilya;Lozovik, Yurii;Polischuk, Ilya;Potapkin, Boris;Ramamurthi, Badri;Deng, Tao;Midha, Vikas;
12:153:7 Why trap light?
DOI:10.1038/nmat3503 JN:NATURE MATERIALS PY:2012
TC:12 AU: John, Sajeev;
12:153:8 Coherence and antibunching in a trapped interacting Bose-Einstein condensate
DOI:10.1103/PhysRevB.84.024515 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Yang, Shengjun;John, Sajeev;
12:154:1 Evaluation of threading dislocation densities in In- and N-face InN
DOI:10.1063/1.3319557 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Gallinat, C. S.;Koblmueller, G.;Wu, Feng;Speck, J. S.;
12:154:2 Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates
DOI:10.1016/j.jallcom.2012.12.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Wang Dang-Hui;Hao Yue;Xu Sheng-Rui;Xu Tian-Han;Wang Dang-Chao;Yao Ting-Zhen;Zhang Ya-Ni;
12:154:3 Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy
DOI:10.1063/1.3488824 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Kamimura, Jumpei;Kishino, Katsumi;Kikuchi, Akihiko;
12:154:4 Structural properties of InN films grown on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3702572 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Cho, YongJin;Brandt, Oliver;Korytov, Maxim;Albrecht, Martin;Kaganer, Vladimir M.;Ramsteiner, Manfred;Riechert, Henning;
12:154:5 Surface diffusion controlled formation of high quality vertically aligned InN nanotubes
DOI:10.1063/1.4895997 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Wei, Pai-Chun;Chen, Li-Chyong;Chen, Kuei-Hsien;
12:154:6 Room-temperature negative photoconductivity in degenerate InN thin films with a supergap excitation
DOI:10.1103/PhysRevB.81.045306 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Wei, Pai-Chun;Chattopadhyay, Surojit;Yang, Min-De;Tong, Shih-Chang;Shen, Ji-Lin;Lu, Chien-Yao;Shih, Han-Chang;Chen, Li-Chyong;Chen, Kuei-Hsien;
12:154:7 Growth of wurtzite InN on bulk In2O3(111) wafers
DOI:10.1063/1.4761985 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Sadofev, Sergey;Cho, YongJin;Brandt, Oliver;Ramsteiner, Manfred;Calarco, Raffaella;Riechert, Henning;Erwin, Steven C.;Galazka, Zbigniew;Korytov, Maxym;Albrecht, Martin;Uecker, Reinhard;Fornari, Roberto;
12:154:8 Auger recombination as the dominant nonradiative recombination channel in InN
DOI:10.1103/PhysRevB.87.155203 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Cho, YongJin;Lue, Xiang;Wienold, Martin;Ramsteiner, Manfred;Grahn, Holger T.;Brandt, Oliver;
12:154:9 Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
DOI:10.1063/1.4792837 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Cho, YongJin;Ramsteiner, Manfred;Brandt, Oliver;
12:154:10 Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate
DOI:10.1063/1.4859615 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wang, Ke;Araki, Tsutomu;Takeuchi, Misaichi;Yoon, Euijoon;Nanishi, Yasushi;
12:154:11 Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes in n-type InN
DOI:10.1103/PhysRevB.85.195209 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Cho, YongJin;Ramsteiner, Manfred;Brandt, Oliver;
12:154:12 Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy
DOI:10.1063/1.3664138 JN:AIP ADVANCES PY:2011
TC:4 AU: Kamimura, Jumpei;Kishino, Katsumi;Kikuchi, Akihiko;
12:154:13 Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates
DOI:10.1063/1.4827396 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kehagias, Th.;Dimitrakopulos, G. P.;Ajagunna, A. O.;Koukoula, T.;Tsagaraki, K.;Adikimenakis, A.;Komninou, Ph.;Georgakilas, A.;
12:154:14 Synthesis of ZnO film on P-GaN/Si(111) by one-step hydrothermal method
DOI:10.1016/j.tsf.2013.10.162 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Yu, Naisen;Du, Lifang;Du, Haiying;Hu, Danyang;Mao, Zhangwen;Wang, Yong;Wu, Yunfeng;Liu, Dongping;
12:154:15 Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4739941 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Cho, YongJin;Korytov, Maxim;Albrecht, Martin;Riechert, Henning;Brandt, Oliver;
12:154:16 Self-annihilation of inversion domains by high energy defects in III-Nitrides
DOI:10.1063/1.4871302 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Koukoula, T.;Kioseoglou, J.;Kehagias, Th;Ajagunna, A. O.;Komninou, Ph;Georgakilas, A.;
12:155:1 Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry
DOI:10.1063/1.3548543 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Hofmann, T.;Boosalis, A.;Kuehne, P.;Herzinger, C. M.;Woollam, J. A.;Gaskill, D. K.;Tedesco, J. L.;Schubert, M.;
12:155:2 Terahertz ellipsometry and terahertz optical-Hall effect
DOI:10.1016/j.tsf.2010.11.069 JN:THIN SOLID FILMS PY:2011
TC:21 AU: Hofmann, T.;Herzinger, C. M.;Tedesco, J. L.;Gaskill, D. K.;Woollam, J. A.;Schubert, M.;
12:155:3 Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
DOI:10.1063/1.4833195 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Schoeche, S.;Kuehne, P.;Hofmann, T.;Schubert, M.;Nilsson, D.;Kakanakova-Georgieva, A.;Janzen, E.;Darakchieva, V.;
12:155:4 Transport properties of free carriers in semiconductors studied by terahertz time-domain magneto-optical ellipsometry
DOI:10.1063/1.3595270 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Yatsugi, Kenichi;Matsumoto, Naoki;Nagashima, Takeshi;Hangyo, Masanori;
12:155:5 Mid-infrared time-domain ellipsometry: Application to Nb-doped SrTiO3
DOI:10.1063/1.4746263 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Rubano, Andrea;Braun, Lukas;Wolf, Martin;Kampfrath, Tobias;
12:155:6 Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
DOI:10.1063/1.4765351 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Hofmann, T.;Kuehne, P.;Schoeche, S.;Chen, Jr-Tai;Forsberg, U.;Janzen, E.;Ben Sedrine, N.;Herzinger, C. M.;Woollam, J. A.;Schubert, M.;Darakchieva, V.;
12:155:7 Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures
DOI:10.1063/1.3556617 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Schoeche, S.;Shi, Junxia;Boosalis, A.;Kuehne, P.;Herzinger, C. M.;Woollam, J. A.;Schaff, W. J.;Eastman, L. F.;Schubert, M.;Hofmann, T.;
12:155:8 Ultrabroadband coherent electric field from far infrared to 200 THz using air plasma induced by 10 fs pulses
DOI:10.1063/1.4732524 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Matsubara, Eiichi;Nagai, Masaya;Ashida, Masaaki;
12:155:9 Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector
DOI:10.1063/1.4862974 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Yamashita, Masatsugu;Takahashi, Hideki;Ouchi, Toshihiko;Otani, Chiko;
12:155:10 Infrared ellipsometry for improved laterally resolved analysis of thin films
DOI:10.1016/j.tsf.2014.02.006 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Hinrichs, Karsten;Furchner, Andreas;Sun, Guoguang;Gensch, Michael;Rappich, Jocrg;Oates, Thomas W. H.;
12:155:11 Measurement of ionic polarization of SrTiO3 single crystal by far-infrared spectroscopic ellipsometry
DOI:10.1063/1.4891767 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kanehara, Kazuki;Hoshina, Takuya;Takeda, Hiroaki;Tsurumi, Takaaki;
12:155:12 Ultrabroadband terahertz generation using 4-N,N-dimethylamino-4 '-N '-methyl-stilbazolium tosylate single crystals
DOI:10.1063/1.3463452 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Katayama, I.;Akai, R.;Bito, M.;Shimosato, H.;Miyamoto, K.;Ito, H.;Ashida, M.;
12:155:13 GaP based terahertz time-domain spectrometer optimized for the 5-8 THz range
DOI:10.1063/1.4764545 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Vugmeyster, I. D.;Whitaker, J. F.;Merlin, R.;
12:155:14 Raman spectroscopic study of the electrical properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport method
DOI:10.1063/1.3415534 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Peng, Yan;Xu, Xiangang;Hu, Xiaobo;Jiang, Kai;Song, Sheng;Gao, Yuqiang;Xu, Huayong;
12:156:1 Hybrid functional calculations of DX centers in AlN and GaN
DOI:10.1103/PhysRevB.89.085204 JN:PHYSICAL REVIEW B PY:2014
TC:2 AU: Gordon, L.;Lyons, J. L.;Janotti, A.;Van de Walle, C. G.;
12:156:2 Hybrid functional study of Si and O donors in wurtzite AlN
DOI:10.1063/1.3641861 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Silvestri, Leonardo;Dunn, Kerry;Prawer, Steven;Ladouceur, Francois;
12:156:3 Stable and metastable Si negative-U centers in AlGaN and AlN
DOI:10.1063/1.4900409 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Trinh, Xuan Thang;Nilsson, Daniel;Ivanov, Ivan G.;Janzen, Erik;Kakanakova-Georgieva, Anelia;Nguyen Tien Son;
12:156:4 Shallow donor and DX states of Si in AlN
DOI:10.1063/1.3559914 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Son, N. T.;Bickermann, M.;Janzen, E.;
12:156:5 Negative-U behavior of the Si donor in Al0.77Ga0.23N
DOI:10.1063/1.4816266 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Xuan Thang Trinh;Nilsson, Daniel;Ivanov, Ivan G.;Janzen, Erik;Kakanakova-Georgieva, Anelia;Nguyen Tien Son;
12:156:6 The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
DOI:10.1063/1.4800978 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Kakanakova-Georgieva, A.;Nilsson, D.;Trinh, X. T.;Forsberg, U.;Son, N. T.;Janzen, E.;
12:156:7 High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
DOI:10.1016/j.jcrysgro.2011.10.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:14 AU: Kakanakova-Georgieva, A.;Nilsson, D.;Janzen, E.;
12:156:8 Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
DOI:10.1063/1.4894173 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Nilsson, D.;Janzen, E.;Kakanakova-Georgieva, A.;
12:156:9 Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance
DOI:10.1063/1.3432755 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Soltamov, V. A.;Ilyin, I. V.;Soltamova, A. A.;Mokhov, E. N.;Baranov, P. G.;
12:156:10 Microscopic origin of n-type behavior in Si-doped AlN
DOI:10.1103/PhysRevB.88.085202 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Hevia, Daniel Fernandez;Stampfl, Catherine;Vines, Francesc;Illas, Francesc;
12:156:11 Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode
DOI:10.1007/s11664-010-1493-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:3 AU: Dion, Joseph;Fareed, Qhalid;Zhang, Bin;Khan, Asif;
12:156:12 Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps
DOI:10.1063/1.4892807 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Okumura, Hironori;Kimoto, Tsunenobu;Suda, Jun;
12:157:1 Morphology-controlled synthesis of silver nanoparticles on the silicon substrate by a facile silver mirror reaction
DOI:10.1063/1.4794956 JN:AIP ADVANCES PY:2013
TC:3 AU: Jiang, Bing;Li, Meicheng;Bai, Fan;Yu, Hang;Mwenya, Trevor;Li, Yingfeng;Song, Dandan;
12:157:2 Metal-Assisted Chemical Etching Using Tollen's Reagent to Deposit Silver Nanoparticle Catalysts for Fabrication of Quasi-ordered Silicon Micro/Nanostructures
DOI:10.1007/s11664-011-1771-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:12 AU: Geng, Xuewen;Li, Meicheng;Zhao, Liancheng;Bohn, Paul W.;
12:157:3 Fabrication of antireflective layers on silicon using metal-assisted chemical etching with in situ deposition of silver nanoparticle catalysts
DOI:10.1016/j.solmat.2012.04.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:17 AU: Geng, Xuewen;Qi, Zhe;Li, Meicheng;Duan, Barrett K.;Zhao, Liancheng;Bohn, Paul W.;
12:157:4 Formation of nanostructured emitter for silicon solar cells using catalytic silver nanoparticles
DOI:10.1016/j.apsusc.2012.10.079 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Li, Dan;Wang, Lei;Li, Dongsheng;Zhou, Ning;Feng, Zhiqiang;Zhong, Xiaoping;Yang, Deren;
12:157:5 Surface-enhanced Raman spectroscopy of arsenate and arsenite using Ag nanofilm prepared by modified mirror reaction
DOI:10.1016/j.jcis.2010.03.028 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:21 AU: Xu, Zhonghou;Hao, Jumin;Li, Fasheng;Meng, Xiaoguang;
12:157:6 Facile Deposition of Ultrafine Silver Particles on Silicon Surface Not Submerged in Precursor Solutions for Applications in Antireflective Layer
DOI:10.1155/2014/351360 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Jiang, Bing;Li, Meicheng;Song, Dandan;Li, Yingfeng;Mwenya, Trevor;
12:157:7 Highly Size- and Shape-Controlled Synthesis of Silver Nanoparticles via a Templated Tollens Reaction
DOI:10.1002/smll.201101474 JN:SMALL PY:2012
TC:18 AU: Dondi, Ruggero;Su, Wu;Griffith, Gerry A.;Clark, Graham;Burley, Glenn A.;
12:157:8 A facile approach for shape selective synthesis of rhodium nanostructures and conductivity studies
DOI:10.1063/1.4764867 JN:AIP ADVANCES PY:2012
TC:3 AU: Sathe, Bhaskar R.;
12:157:9 Metal-assisted homogeneous etching of single crystal silicon: A novel approach to obtain an ultra-thin silicon wafer
DOI:10.1016/j.apsusc.2013.01.196 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Bai, Fan;Li, Meicheng;Song, Dandan;Yu, Hang;Jiang, Bing;Li, Yingfeng;
12:157:10 Size controllable synthesis of ultrafine silver particles through a one-step reaction
DOI:10.1016/j.matlet.2010.11.037 JN:MATERIALS LETTERS PY:2011
TC:9 AU: Liu, Tao;Li, Dongsheng;Yang, Deren;Jiang, Minhua;
12:157:11 Vertical deposition of ultrafine silver particles on silicon surface out of solutions by silver mirror process
DOI:10.1016/j.matlet.2013.11.029 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Jiang, Bing;Li, Meicheng;Li, Yingfeng;Song, Dandan;Mwenya, Trevor;
12:157:12 Effects of argon ion irradiation on nucleation and growth of silver nanoparticles in a soda-glass matrix
DOI:10.1063/1.3623737 JN:AIP ADVANCES PY:2011
TC:2 AU: Gangopadhyay, P.;Magudapathy, P.;Srivastava, S. K.;Nair, K. G. M.;Panigrahi, K.;
12:157:13 Surface-Enhanced Raman Scattering Spectroscopy of Explosive 2,4-Dinitroanisole using Modified Silver Nanoparticles
DOI:10.1021/la202560t JN:LANGMUIR PY:2011
TC:19 AU: Xu, Zhonghou;Hao, Jumin;Braida, Washington;Strickland, David;Li, Fasheng;Meng, Xiaoguang;
12:157:14 Tunable optical features from self-organized rhodium nanostructures
DOI:10.1063/1.3447927 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Sathe, Bhaskar R.;Balan, Beena K.;Pillai, Vijayamohanan K.;
12:157:15 The modulation of surface texture for single-crystalline Si solar cells using calibrated silver nanoparticles as a catalyst
DOI:10.1088/0957-4484/22/2/025703 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Gu, Xin;Yu, Xuegong;Liu, Tao;Li, Dongsheng;Yang, Deren;
12:158:1 High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition
DOI:10.1016/j.jallcom.2010.10.189 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:15 AU: Xiang, R. F.;Fang, Y-Y.;Dai, J. N.;Zhang, L.;Su, C. Y.;Wu, Z. H.;Yu, C. H.;Xiong, H.;Chen, C. Q.;Hao, Y.;
12:158:2 Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon
DOI:10.1016/j.jcrysgro.2015.03.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Park, Byung-Guon;Kumar, R. Saravana;Moon, Mee-Lim;Kim, Moon-Deock;Kang, Tae-Won;Yang, Woo-Chul;Kim, Song-Gang;
12:158:3 Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD
DOI:10.1016/j.jallcom.2013.08.153 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Zhong, M. M.;Qin, F. W.;Liu, Y. M.;Wang, C.;Bian, J. M.;Wang, E. P.;Wang, H.;Zhang, D.;
12:158:4 Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition
DOI:10.1016/j.jallcom.2013.01.195 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Cui, Jishi;Xiao, Hongdi;Liu, Jianqiang;Luan, Caina;Ji, Ziwu;Pei, Haiyan;
12:158:5 Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
DOI:10.1016/j.jcrysgro.2010.10.173 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Pan, Xu;Wei, Meng;Yang, Cuibai;Xiao, Hongling;Wang, Cuimei;Wang, Xiaoliang;
12:158:6 Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.07.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Manuel, Jose M.;Morales, Francisco M.;Garcia, Rafael;Aidam, Rolf;Kirste, Lutz;Ambacher, Oliver;
12:158:7 Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates
DOI:10.1016/j.mssp.2014.04.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Bian, Jiming;Miao, Lihua;Qin, Fuwen;Zhang, Dong;Liu, Weifeng;Liu, Hongzhu;
12:158:8 Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method
DOI:10.1016/j.jcrysgro.2012.08.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Wang, Juan;Ryu, Heui-Bum;Park, Mi-Seon;Lee, Won-Jae;Choi, Young-Jun;Lee, Hae-Yong;
12:158:9 Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
DOI:10.1016/j.jcrysgro.2013.01.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Liu, Yuemei;Qin, Fuwen;Zhang, Dong;Bian, Jiming;Zhao, Yue;Wang, Enping;Wang, Shuai;Zhong, Miaomiao;Ju, Zhenhe;
12:158:10 Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
DOI:10.1016/j.materresbull.2011.06.023 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:6 AU: Zhang, D.;Bian, J. M.;Qin, F. W.;Wang, J.;Pan, L.;Zhao, J. M.;Zhao, Y.;Bai, Y. Z.;Du, G. T.;
12:158:11 Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers
DOI:10.1063/1.4717743 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Xiao, Hong-Di;Liu, Jian-Qiang;Luan, Cai-Na;Ji, Zi-Wu;Cui, Ji-Shi;
12:158:12 Deposition of GaN films on crystalline rare earth oxides by MOCVD
DOI:10.1016/j.jcrysgro.2014.04.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Leathersich, Jeff;Arkun, Erdem;Clark, Andrew;Suvarna, Puneet;Marini, Jon;Dargis, Rytis;Shahedipour-Sandvik, F. (Shadi);
12:158:13 Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system
DOI:10.1063/1.4904007 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kadir, Abdul;Huang, Chieh Chih;Lee, Kenneth Eng Kian;Fitzgerald, Eugene A.;Chua, Soo Jin;
12:158:14 Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N-2/H-2 excited plasma - effect of TMG flow rate and VHF power
DOI:10.1016/j.jcrysgro.2014.01.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Lu, Yi;Kondo, Hiroki;Ishikawa, Kenji;Oda, Osamu;Takeda, Keigo;Sekine, Makoto;Amano, Hiroshi;Hori, Masaru;
12:158:15 Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition
DOI:10.1016/j.mssp.2012.06.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Ozturk, Mustafa K.;Arslan, Engin;Kars, Ilknur;Ozcelik, Suleyman;Ozbay, Ekmel;
12:158:16 Deposition and properties of highly C-oriented GaN films on diamond substrates
DOI:10.1007/s00339-010-5991-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Zhang, Dong;Bai, Yizhen;Qin, Fuwen;Jia, Fuchao;Wang, Jian;Bian, Jiming;
12:158:17 GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
DOI:10.1016/j.jcrysgro.2015.03.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Grinys, T.;Dargis, R.;Kalpakovaite, A.;Stanionyte, S.;Clark, A.;Arkun, F. E.;Reklaitis, I.;Tomasiunas, R.;
12:159:1 Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers
DOI:10.1063/1.3483853 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Koyama, Koichi;Ohdaira, Keisuke;Matsumura, Hideki;
12:159:2 Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with < 1 cm/s effective surface recombination velocity
DOI:10.1063/1.4827821 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Herasimenka, Stanislau Y.;Tracy, Clarence J.;Sharma, Vivek;Vulic, Natasa;Dauksher, William J.;Bowden, Stuart G.;
12:159:3 Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks
DOI:10.1063/1.3291681 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Larionova, Yevgeniya;Mertens, Verena;Harder, Nils-Peter;Brendel, Rolf;
12:159:4 High-quality surface passivation of silicon using native oxide and silicon nitride layers
DOI:10.1063/1.4733336 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Chowdhury, Zahidur R.;Cho, Kevin;Kherani, Nazir P.;
12:159:5 Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 degrees C
DOI:10.1063/1.4895635 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Matsumura, Hideki;Hayakawa, Taro;Ohta, Tatsunori;Nakashima, Yuki;Miyamoto, Motoharu;Trinh Cham Thi;Koyama, Koichi;Ohdaira, Keisuke;
12:159:6 Optimal hydrogenated amorphous silicon/silicon nitride bilayer passivation of n-type crystalline silicon using response surface methodology
DOI:10.1063/1.4764011 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Stepanov, Dmitri S.;Kherani, Nazir P.;
12:159:7 A technique for field effect surface passivation for silicon solar cells
DOI:10.1063/1.4882161 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bonilla, Ruy S.;Wilshaw, Peter R.;
12:159:8 Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer
DOI:10.1063/1.4891237 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Trinh Cham Thi;Koyama, Koichi;Ohdaira, Keisuke;Matsumura, Hideki;
12:159:9 Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers
DOI:10.1116/1.4706894 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Higashimine, Koichi;Koyama, Koichi;Ohdaira, Keisuke;Matsumura, Hideki;Otsuka, N.;
12:159:10 Drastic reduction in surface recombination velocity of crystalline silicon by surface treatment using catalytically-generated radicals
DOI:10.1016/j.solmat.2010.08.034 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:9 AU: Matsumura, Hideki;Miyamoto, Motoharu;Koyama, Koichi;Ohdaira, Keisuke;
12:159:11 Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks
DOI:10.1063/1.3703659 JN:AIP ADVANCES PY:2012
TC:2 AU: Li, Hua;Wenham, Stuart R.;
12:159:12 Double layer a-Si:H/SiN:H deposited at low temperature for the passivation of N-type silicon
DOI:10.1007/s00339-013-7802-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Schutz-Kuchly, T.;Slaoui, A.;
12:159:13 Characterization and comparison of silicon nitride films deposited using two novel processes
DOI:10.1116/1.3687423 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:2 AU: Sharma, Vivek;Bailey, Adam;Dauksher, Bill;Tracy, Clarence;Bowden, Stuart;O'Brien, Barry;
12:159:14 Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition
DOI:10.1016/j.tsf.2011.01.319 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Schuettauf, J. W. A.;van der Werf, C. H. M.;van Sark, W. G. J. H. M.;Rath, J. K.;Schropp, R. E. I.;
12:159:15 Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with < 1 cm/s effective surface recombination velocity (vol 103, 183903, 2013)
DOI:10.1063/1.4833028 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Herasimenka, Stanislau Y.;Tracy, Clarence J.;Sharma, Vivek;Vulic, Natasa;Dauksher, William J.;Bowden, Stuart G.;
12:159:16 Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell
DOI:10.1063/1.4905198 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chowdhury, Zahidur R.;Kherani, Nazir P.;
12:159:17 Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry
DOI:10.1063/1.4904340 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Qviller, A. J.;Dennison, A. J. C.;Haug, H.;You, C. C.;Hasle, I. M.;Ostreng, E.;Fjellvag, H.;Vorobiev, A.;Hjorvarsson, B.;Marstein, E. S.;Frommen, C.;Hauback, B. C.;
12:159:18 Damp and dry heat degradation of thermal oxide passivation of p(+) silicon
DOI:10.1063/1.4869057 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Thomson, Andrew;Gardner, Matthew;McIntosh, Keith;Shalav, Avi;Bullock, James;
12:159:19 Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon
DOI:10.1016/j.solmat.2012.01.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:3 AU: Thi, Trinh Cham;Koyama, Koichi;Ohdaira, Keisuke;Matsumura, Hideki;
12:159:20 Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates
DOI:10.1016/j.tsf.2011.01.294 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Koyama, Koichi;Ohdaira, Keisuke;Matsumura, Hideki;
12:160:1 Design and Non-Lithographic Fabrication of Light Trapping Structures for Thin Film Silicon Solar Cells
DOI:10.1002/adma.201003217 JN:ADVANCED MATERIALS PY:2011
TC:32 AU: Sheng, Xing;Liu, Jifeng;Kozinsky, Inna;Agarwal, Anuradha M.;Michel, Jurgen;Kimerling, Lionel C.;
12:160:2 Selectively Transparent and Conducting Photonic Crystals
DOI:10.1002/adma.200902605 JN:ADVANCED MATERIALS PY:2010
TC:25 AU: O'Brien, Paul G.;Puzzo, Daniel P.;Chutinan, Alongkarn;Bonifacio, Leonardo D.;Ozin, Geoffrey A.;Kherani, Nazir P.;
12:160:3 ITO distributed Bragg reflectors fabricated at low temperature for light-trapping in thin-film solar cells
DOI:10.1016/j.solmat.2013.08.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Tien, W. C.;Chu, A. K.;
12:160:4 See-Through Dye-Sensitized Solar Cells: Photonic Reflectors for Tandem and Building Integrated Photovoltaics
DOI:10.1002/adma.201302113 JN:ADVANCED MATERIALS PY:2013
TC:8 AU: Heiniger, Leo-Philipp;O'Brien, Paul G.;Soheilnia, Navid;Yang, Yang;Kherani, Nazir P.;Graetzel, Michael;Ozin, Geoffrey A.;Tetreault, Nicolas;
12:160:5 Selectively transparent and conducting photonic crystal solar spectrum splitters made of alternating sputtered indium-tin oxide and spin-coated silica nanoparticle layers for enhanced photovoltaics
DOI:10.1016/j.solmat.2012.03.005 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:13 AU: O'Brien, Paul G.;Yang, Yang;Chutinan, Alongkarn;Mahtani, Pratish;Leong, Keith;Puzzo, Daniel P.;Bonifacio, Leonardo D.;Lin, Chen-Wei;Ozin, Geoffrey A.;Kherani, Nazir P.;
12:160:6 See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics
DOI:10.1063/1.4833542 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yang, Yang;O'Brien, Paul G.;Ozin, Geoffrey A.;Kherani, Nazir P.;
12:160:7 Nanoporous transparent and conducting films and photonic crystals
DOI:10.1364/OME.3.002055 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:0 AU: O'Brien, P. G.;Yang, Y.;Flood, A.;Hsu, H.;Puzzo, D. P.;Ozin, G. A.;Kherani, N. P.;
12:160:8 Integrated photonic structures for light trapping in thin-film Si solar cells
DOI:10.1063/1.3693613 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Sheng, Xing;Johnson, Steven G.;Broderick, Lirong Z.;Michel, Jurgen;Kimerling, Lionel C.;
12:160:9 Double-layer ITO antireflection electrodes fabricated at low temperature
DOI:10.1016/j.solmat.2012.01.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:5 AU: Tien, W. C.;Chu, A. K.;
12:160:10 Hafnia-plugged microcavities for thermal stability of selective emitters
DOI:10.1063/1.4811703 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Lee, Heon-Ju;Smyth, Katherine;Bathurst, Stephen;Chou, Jeffrey;Ghebrebrhan, Michael;Joannopoulos, John;Saka, Nannaji;Kim, Sang-Gook;
12:160:11 Performance enhancement of thin film silicon solar cells based on distributed Bragg reflector & diffraction grating
DOI:10.1063/1.4904218 JN:AIP ADVANCES PY:2014
TC:0 AU: Dubey, R. S.;Saravanan, S.;Kalainathan, S.;
12:160:12 Microcavity enhanced silicon light emitting pn-diode
DOI:10.1063/1.3385153 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Potfajova, J.;Schmidt, B.;Helm, M.;Gemming, T.;Benyoucef, M.;Rastelli, A.;Schmidt, O. G.;
12:161:1 Short channel effects on gallium nitride/gallium oxide nanowire transistors
DOI:10.1063/1.4764554 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Yu, J. -W.;Yeh, P. -C.;Wang, S. -L.;Wu, Y. -R.;Mao, M. -H.;Lin, H. -H.;Peng, L. -H.;
12:161:2 Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor
DOI:10.1063/1.3651332 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Yu, J. -W.;Li, C. -K;Chen, C. -Y.;Wu, Y. -R.;Chou, L. -J.;Peng, L. -H.;
12:161:3 Size-dependent properties of ballistic silicon nanowire field effect transistors
DOI:10.1063/1.3388324 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Lee, Yeonghun;Kakushima, Kuniyuki;Shiraishi, Kenji;Natori, Kenji;Iwai, Hiroshi;
12:161:4 Scaling performance of Ga2O3/GaN nanowire field effect transistor
DOI:10.1063/1.4827190 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Li, Chi-Kang;Yeh, Po-Chun;Yu, Jeng-Wei;Peng, Lung-Han;Wu, Yuh-Renn;
12:161:5 Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon
DOI:10.1063/1.3488635 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Baykan, Mehmet O.;Thompson, Scott E.;Nishida, Toshikazu;
12:161:6 Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires
DOI:10.1063/1.3615942 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Kim, Jiseok;Fischetti, Massimo V.;
12:161:7 Growth and characterization of horizontal GaN wires on silicon
DOI:10.1063/1.4886126 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zou, Xinbo;Lu, Xing;Lucas, Ryan;Kuech, Thomas F.;Choi, Jonathan W.;Gopalan, Padma;Lau, Kei May;
12:161:8 Relation between nanomorphology and energy bands of Si nanowires
DOI:10.1103/PhysRevB.87.165418 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Kyogoku, Shinya;Iwata, Jun-Ichi;Oshiyama, Atsushi;
12:161:9 Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors
DOI:10.1063/1.3464320 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Lee, Yeonghun;Kakushima, Kuniyuki;Shiraishi, Kenji;Natori, Kenji;Iwai, Hiroshi;
12:161:10 Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors
DOI:10.1063/1.4808241 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Chen, Chin-Yi;Wu, Yuh-Renn;
12:161:11 Effect of Biaxial Strain on Electronic and Thermoelectric Properties of Mg2Si
DOI:10.1007/s11664-013-2793-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:4 AU: Balout, Hilal;Boulet, Pascal;Record, Marie-Christine;
12:162:1 Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires
DOI:10.1021/nl404414r JN:NANO LETTERS PY:2014
TC:8 AU: Bayerl, Dylan;Kioupakis, Emmanouil;
12:162:2 Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy
DOI:10.1103/PhysRevB.83.125204 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Millot, Marius;Ubrig, Nicolas;Poumirol, Jean-Marie;Gherasoiu, Iulian;Walukiewicz, Wladek;George, Sylvie;Portugall, Oliver;Leotin, Jean;Goiran, Michel;Broto, Jean-Marc;
12:162:3 Importance of on-site corrections to the electronic and structural properties of InN in crystalline solid, nonpolar surface, and nanowire forms
DOI:10.1103/PhysRevB.82.165307 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Terentjevs, A.;Catellani, A.;Prendergast, D.;Cicero, G.;
12:162:4 First-principles study on structural properties and phase stability of III-phosphide (BP, GaP, AlP and InP)
DOI:10.1016/j.commatsci.2009.10.009 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:13 AU: Arbouche, O.;Belgoumene, B.;Soudini, B.;Azzaz, Y.;Bendaoud, H.;Amara, K.;
12:162:5 Thermodynamic properties of In1-xBxP semiconducting alloys: A first-principles study
DOI:10.1016/j.commatsci.2014.05.005 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Gonzalez-Garcia, Alvaro;Lopez-Perez, William;Palacio-Mozo, Rommel;Gonzalez-Hernandez, Rafael;
12:162:6 LDA plus U and tight-binding electronic structure of InN nanowires
DOI:10.1103/PhysRevB.82.165324 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Molina-Sanchez, A.;Garcia-Cristobal, A.;Cantarero, A.;Terentjevs, A.;Cicero, G.;
12:162:7 Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistent GW band structures
DOI:10.1103/PhysRevB.85.195147 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Punya, Atchara;Lambrecht, Walter R. L.;
12:162:8 Ab-initio study of phase stability, thermodynamic and elastic properties of beryllium sulfide under extreme condition
DOI:10.1016/j.jallcom.2012.11.104 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Wang, Feng;Zhou, Mu;Zhou, Ping;Zheng, Zhou;
12:162:9 Structural parameters, band-gap bowings and phase diagrams of zinc-blende Sc1-xInxP ternary alloys: A FP-LAPW study
DOI:10.1016/j.jallcom.2013.03.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Lopez-Perez, William;Simon-Olivera, Nicolas;Molina-Coronell, Javier;Gonzalez-Garcia, Alvaro;Gonzalez-Hernandez, Rafael;
12:162:10 Pressure-induced metallic phase transition and elastic properties of indium phosphide III-V semiconductor
DOI:10.1557/jmr.2012.60 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Hu, Chenghua;Wang, Feng;Zheng, Zhou;
12:163:1 Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3639292 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:26 AU: Siekacz, M.;Sawicka, M.;Turski, H.;Cywinski, G.;Khachapuridze, A.;Perlin, P.;Suski, T.;Bockowski, M.;Smalc-Koziorowska, J.;Krysko, M.;Kudrawiec, R.;Syperek, M.;Misiewicz, J.;Wasilewski, Z.;Porowski, S.;Skierbiszewski, C.;
12:163:2 Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers
DOI:10.1016/j.jcrysgro.2012.12.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:10 AU: Turski, H.;Siekacz, M.;Wasilewski, Z. R.;Sawicka, M.;Porowski, S.;Skierbiszewski, C.;
12:163:3 Gain of blue and cyan InGaN laser diodes
DOI:10.1063/1.3541785 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Lermer, T.;Gomez-Iglesias, A.;Sabathil, M.;Mueller, J.;Lutgen, S.;Strauss, U.;Pasenow, B.;Hader, J.;Moloney, J. V.;Koch, S. W.;Scheibenzuber, W.;Schwarz, U. T.;
12:163:4 Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20(2)over-bar1) substrates
DOI:10.1063/1.4796123 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Sawicka, M.;Cheze, C.;Turski, H.;Muziol, G.;Grzanka, S.;Hauswald, C.;Brandt, O.;Siekacz, M.;Kucharski, R.;Remmele, T.;Albrecht, M.;Krysko, M.;Grzanka, E.;Sochacki, T.;Skierbiszewski, C.;
12:163:5 Optical waveguide simulations for the optimization of InGaN-based green laser diodes
DOI:10.1063/1.3275325 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: Huang, Chia-Yen;Lin, You-Da;Tyagi, Anurag;Chakraborty, Arpan;Ohta, Hiroaki;Speck, James S.;DenBaars, Steven P.;Nakamura, Shuji;
12:163:6 Determination of gain in AlGaN cladding free nitride laser diodes
DOI:10.1063/1.4817754 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Muziol, G.;Turski, H.;Siekacz, M.;Sawicka, M.;Wolny, P.;Perlin, P.;Skierbiszewski, C.;
12:163:7 GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions
DOI:10.1063/1.4887377 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Piprek, Joachim;
12:163:8 Cyan laser diode grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4861655 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Turski, H.;Muziol, G.;Wolny, P.;Grzanka, S.;Cywinski, G.;Sawicka, M.;Perlin, P.;Skierbiszewski, C.;
12:163:9 InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE
DOI:10.1116/1.3665223 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:7 AU: Skierbiszewski, C.;Siekacz, M.;Turski, H.;Muziol, G.;Sawicka, M.;Feduniewicz-Zmuda, A.;Smalc-Koziorowska, J.;Perlin, P.;Grzanka, S.;Wasilewski, Z. R.;Kucharski, R.;Porowski, S.;
12:163:10 AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.4865478 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Skierbiszewski, Czeslaw;Turski, Henryk;Muziol, Grzegorz;Wolny, Pawel;Cywinski, Grzegorz;Grzanka, Szymon;Smalc-Koziorowska, Julita;Sawicka, Marta;Perlin, Piotr;Wasilewski, Zbig R.;Porowski, Sylwester;
12:163:11 High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.02.067 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Muziol, G.;Siekacz, M.;Turski, H.;Wolny, P.;Grzanka, S.;Grzanka, E.;Feduniewicz-Zmuda, A.;Borysiuk, J.;Sobczak, K.;Domagala, J.;Nowakowska-Siwinska, A.;Makarowa, I.;Perlin, P.;Skierbiszewski, C.;
12:163:12 Growth mechanism of InGaN by plasma assisted molecular beam epitaxy
DOI:10.1116/1.3590932 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:5 AU: Turski, H.;Siekacz, M.;Sawicka, M.;Cywinski, G.;Krysko, M.;Grzanka, S.;Smalc-Koziorowska, J.;Grzegory, I.;Porowski, S.;Wasilewski, Z. R.;Skierbiszewski, C.;
12:163:13 Ultraviolet light-emitting diodes grown by plasma- assisted molecular beam epitaxy on semipolar GaN (2021) substrates (vol 102, 111107, 2013)
DOI:10.1063/1.4879638 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Sawicka, M.;Cheze, C.;Turski, H.;Muziol, G.;Grzanka, S.;Hauswald, C.;Brandt, O.;Siekacz, M.;Kucharski, R.;Remmele, T.;Albrecht, M.;Krysko, M.;Grzanka, E.;Sochacki, T.;Skierbiszewski, C.;
12:163:14 MBE fabrication of III-N-based laser diodes and its development to industrial system
DOI:10.1016/j.jcrysgro.2012.12.116 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Skierbiszewski, C.;Siekacz, M.;Turski, H.;Muziol, G.;Sawicka, M.;Perlin, P.;Wasilewski, Z. R.;Porowski, S.;
12:164:1 Structural and optical properties of c-axis oriented aluminum nitride thin films prepared at low temperature by reactive radio-frequency magnetron sputtering
DOI:10.1016/j.tsf.2012.10.015 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Galca, Aurelian C.;Stan, George E.;Trinca, Liliana M.;Negrila, C. Catalin;Nistor, Leona C.;
12:164:2 Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy
DOI:10.1063/1.4880957 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Lotsari, A.;Kehagias, Th.;Tsiakatouras, G.;Tsagaraki, K.;Katsikini, M.;Arvanitidis, J.;Christofilos, D.;Ves, S.;Komninou, Ph.;Georgakilas, A.;Dimitrakopulos, G. P.;
12:164:3 Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE
DOI:10.1016/j.jcrysgro.2014.09.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Oehler, F.;Sutherland, D.;Zhu, T.;Emery, R.;Badcock, T. J.;Kappers, M. J.;Humphreys, C. J.;Dawson, P.;Oliver, R. A.;
12:164:4 Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature
DOI:10.1016/j.jcrysgro.2012.10.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Liu, H. Y.;Tang, G. S.;Zeng, F.;Pan, F.;
12:164:5 Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
DOI:10.1016/j.jcrysgro.2011.10.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Hao, Rui;Kappers, M. J.;Moram, M. A.;Humphreys, C. J.;
12:164:6 Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
DOI:10.1016/j.apsusc.2010.10.059 JN:APPLIED SURFACE SCIENCE PY:2011
TC:11 AU: Chiang, C. H.;Chen, K. M.;Wu, Y. H.;Yeh, Y. S.;Lee, W. I.;Chen, J. F.;Lin, K. L.;Hsiao, Y. L.;Huang, W. C.;Chang, E. Y.;
12:164:7 Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering
DOI:10.1063/1.3678631 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Vickers, M. E.;Hollander, J. L.;McAleese, C.;Kappers, M. J.;Moram, M. A.;Humphreys, C. J.;
12:164:8 Structural characterization of AlN films synthesized by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.10.043 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Szekeres, A.;Fogarassy, Zs.;Petrik, P.;Vlaikova, E.;Cziraki, A.;Socol, G.;Ristoscu, C.;Grigorescu, S.;Mihailescu, I. N.;
12:164:9 Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.05.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Dasilva, Y. Arroyo Rojas;Zhu, T.;Martin, D.;Grandjean, N.;Jahn, U.;Stadelmann, P.;
12:164:10 High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
DOI:10.1016/j.jcrysgro.2010.09.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Laskar, Masihhur R.;Ganguli, Tapas;Hatui, Nirupam;Rahman, A. A.;Gokhale, M. R.;Bhattacharya, Arnab;
12:164:11 The effects of annealing on non-polar (1 1 (2)over-bar 0) a-plane GaN films
DOI:10.1016/j.jcrysgro.2010.08.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Hao, Rui;Zhu, T.;Haeberlen, M.;Chang, T. Y.;Kappers, M. J.;Oliver, R. A.;Humphreys, C. J.;Moram, M. A.;
12:164:12 Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry
DOI:10.1016/j.optmat.2010.01.015 JN:OPTICAL MATERIALS PY:2010
TC:6 AU: Jiang, Wei;Lin, Wei;Li, Shuping;Chen, Jincan;Kang, Junyong;
12:164:13 Fourier transform infrared spectroscopy characterization of AlN thin films grown on sacrificial silicon oxide layers via metal organic vapor phase epitaxy
DOI:10.1016/j.tsf.2010.07.076 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Kuchibhatla, S.;Rodak, L. E.;Korakakis, D.;
12:164:14 Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2009.12.064 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Huang, H. M.;Ling, S. C.;Chen, J. R.;Ko, T. S.;Li, J. C.;Lu, T. C.;Kuo, H. C.;Wang, S. C.;
12:164:15 Effect of process conditions on the microstructural formation of dc reactively sputter deposited AIN
DOI:10.1116/1.3478670 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Ekpe, Samuel D.;Jimenez, Francisco J.;Dew, Steven K.;
12:164:16 Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering
DOI:10.1116/1.3280174 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:4 AU: Iriarte, G. F.;
12:164:17 Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080 degrees C
DOI:10.1016/j.tsf.2012.01.028 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Mutsukura, Nobuki;Shinoda, Hiroyuki;
12:165:1 Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
DOI:10.1063/1.3360227 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Law, J. J. M.;Yu, E. T.;Koblmueller, G.;Wu, F.;Speck, J. S.;
12:165:2 Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
DOI:10.1063/1.3514236 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Koblmueller, G.;Reurings, F.;Tuomisto, F.;Speck, J. S.;
12:165:3 Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4866445 JN:AIP ADVANCES PY:2014
TC:1 AU: Kushvaha, S. S.;Pal, P.;Shukla, A. K.;Joshi, Amish G.;Gupta, Govind;Kumar, M.;Singh, S.;Gupta, Bipin K.;Haranath, D.;
12:165:4 Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates
DOI:10.1016/j.jcrysgro.2012.07.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:12 AU: Yamane, K.;Ueno, M.;Furuya, H.;Okada, N.;Tadatomo, K.;
12:165:5 Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters
DOI:10.1002/adfm.201203035 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:5 AU: Chang, Che-Wei;Tan, Wei-Chun;Lu, Meng-Lin;Pan, Tai-Chun;Yang, Ying-Jay;Chen, Yang-Fang;
12:165:6 Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
DOI:10.1063/1.4821276 JN:AIP ADVANCES PY:2013
TC:8 AU: Kushvaha, S. S.;Kumar, M. Senthil;Maurya, K. K.;Dalai, M. K.;Sharma, Nita D.;
12:165:7 Step-flow growth mode instability of N-polar GaN under N-excess
DOI:10.1063/1.4818322 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Cheze, C.;Sawicka, M.;Siekacz, M.;Turski, H.;Cywinski, G.;Smalc-Koziorowska, J.;Weyher, J. L.;Krysko, M.;Lucznik, B.;Bockowski, M.;Skierbiszewski, C.;
12:165:8 Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4789983 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Loitsch, Bernhard;Schuster, Fabian;Stutzmann, Martin;Koblmueller, Gregor;
12:165:9 Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures
DOI:10.1016/j.apsusc.2011.09.089 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Guillen-Cervantes, A.;Rivera-Alvarez, Z.;Lopez-Lopez, M.;Ponce-Pedraza, A.;Guarneros, C.;Sanchez-Resendiz, V. M.;
12:165:10 Cross sectional CL study of the growth and annihilation of pit type defects in HVPE grown (0001) thick GaN
DOI:10.1016/j.jcrysgro.2012.04.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Lee, W.;Lee, H. J.;Park, S. H.;Watanabe, K.;Kumagai, K.;Yao, T.;Chang, J. H.;Sekiguchi, T.;
12:165:11 Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy
DOI:10.1063/1.4737402 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Calloni, A.;Ferragut, R.;Dupasquier, A.;von Kaenel, H.;Guiller, A.;Rutz, A.;Ravelli, L.;Egger, W.;
12:165:12 Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
DOI:10.1016/j.jcrysgro.2010.09.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Chen, Kuei-Ming;Yeh, Yen-Hsien;Wu, Yin-Hao;Chiang, Chen-Hao;Yang, Din-Ru;Chao, Chu-Li;Chi, Tung-Wei;Fang, Yen-Hsang;Tsay, Jenq-Dar;Lee, Wei-I;
12:165:13 Magnesium doped GaN grown by MOCVD
DOI:10.1016/j.mseb.2010.03.022 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Guarneros, C.;Sanchez, V.;
12:165:14 Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques
DOI:10.1016/j.tsf.2013.04.049 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Hofer, Alexander;Benstetter, Guenther;Biberger, Roland;Leirer, Christian;Bruederl, Georg;
12:166:1 Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1(1)over-bar01) semipolar GaN
DOI:10.1063/1.3549561 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Wu, Z. H.;Tanikawa, T.;Murase, T.;Fang, Y. -Y.;Chen, C. Q.;Honda, Y.;Yamaguchi, M.;Amano, H.;Sawaki, N.;
12:166:2 Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells
DOI:10.1063/1.4739723 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Nishinaka, Junichi;Funato, Mitsuru;Kawakami, Yoichi;
12:166:3 Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes
DOI:10.1103/PhysRevB.81.125325 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Zhu, Mingwei;You, Shi;Detchprohm, Theeradetch;Paskova, Tanya;Preble, Edward A.;Hanser, Drew;Wetzel, Christian;
12:166:4 Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
DOI:10.1063/1.3569848 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Liu, Lei;Wang, Lei;Li, Ding;Liu, Ningyang;Li, Lei;Cao, Wenyu;Yang, Wei;Wan, Chenghao;Chen, Weihua;Du, Weimin;Hu, Xiaodong;Feng, Zhe Chuan;
12:166:5 Investigation of large Stark shifts in InGaN/GaN multiple quantum wells
DOI:10.1063/1.4775605 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Xu, Guibao;Sun, Guan;Ding, Yujie J.;Zhao, Hongping;Liu, Guangyu;Zhang, Jing;Tansu, Nelson;
12:166:6 Morphology and origin of V-defects in semipolar (11-22) InGaN
DOI:10.1016/j.jcrysgro.2011.11.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Lotsari, A.;Das, A.;Kehagias, Th.;Kotsar, Y.;Monroy, E.;Karakostas, Th.;Gladkov, P.;Komninou, Ph.;Dimitrakopulos, G. P.;
12:166:7 Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
DOI:10.1016/j.jcrysgro.2013.10.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Liu, Fang;Huang, Li;Kamaladasa, Ranga;Picard, Yoosuf N.;Preble, Edward A.;Paskova, Tanya;Evans, Keith R.;Davis, Robert F.;Porter, Lisa M.;
12:166:8 High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
DOI:10.1007/s00339-014-8283-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Zhang, Jianli;Xiong, Chuanbing;Liu, Junlin;Quan, Zhijue;Wang, Li;Jiang, Fengyi;
12:166:9 Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer
DOI:10.1063/1.3315887 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Wang, Lei;Li, Rui;Li, Ding;Liu, Ningyang;Liu, Lei;Chen, Weihua;Wang, Cunda;Yang, Zhijian;Hu, Xiaodong;
12:166:10 Strain states in semipolar III-nitride semiconductor quantum wells
DOI:10.1063/1.3446297 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Funato, M.;Inoue, D.;Ueda, M.;Kawakami, Y.;Narukawa, Y.;Mukai, T.;
12:166:11 The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates
DOI:10.1007/s00339-012-6984-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Li, Lei;Liu, Lei;Wang, Lei;Li, Ding;Song, Jie;Liu, Ningyang;Chen, Weihua;Wang, Yuzhou;Yang, Zhijian;Hu, Xiaodong;
12:166:12 Effects of enhanced lateral transport on InGaN/GaN light emitting diodes via n-type AlGaN/GaN superlattices
DOI:10.1063/1.4823507 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Song, Hooyoung;Jeon, Ki-Seong;Joe, Jin Hyoun;Kim, Seonock;Lee, Minwoo;Lee, Eun Ah;Choi, Hwanjoon;Sung, Junho;Kang, Min-Gu;Choi, Yoon-Ho;Lee, Jeong Soo;
12:166:13 Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
DOI:10.1063/1.3487935 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Fujan, K. J.;Feneberg, M.;Neuschl, B.;Meisch, T.;Tischer, I.;Thonke, K.;Schwaiger, S.;Izadi, I.;Scholz, F.;Lechner, L.;Biskupek, J.;Kaiser, U.;
12:166:14 Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN
DOI:10.1063/1.3684606 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Okada, Narihito;Yamada, Yoichi;Tadatomo, Kazuyuki;
12:167:1 Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure
DOI:10.1021/nn102556s JN:ACS NANO PY:2011
TC:39 AU: Krylyuk, Sergiy;Davydov, Albert V.;Levin, Igor;
12:167:2 Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices
DOI:10.1007/s11664-012-1904-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:20 AU: Curtin, Benjamin M.;Fang, Eugene W.;Bowers, John E.;
12:167:3 Seebeck coefficient in silicon nanowire arrays
DOI:10.1063/1.4800778 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Krali, Emiljana;Durrani, Zahid A. K.;
12:167:4 Monolithically integrated thermoelectric energy harvester based on silicon nanowire arrays for powering micro/nanodevices
DOI:10.1016/j.nanoen.2012.06.006 JN:NANO ENERGY PY:2012
TC:15 AU: Davila, Diana;Tarancon, Albert;Calaza, Carlos;Salleras, Marc;Fernandez-Regulez, Marta;San Paulo, Alvaro;Fonseca, Luis;
12:167:5 Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators
DOI:10.1063/1.4881781 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Xu, B.;Fobelets, K.;
12:167:6 Planar Thermoelectric Microgenerators Based on Silicon Nanowires
DOI:10.1007/s11664-011-1591-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:8 AU: Davila, D.;Tarancon, A.;Kendig, D.;Fernandez-Regulez, M.;Sabate, N.;Salleras, M.;Calaza, C.;Cane, C.;Gracia, I.;Figueras, E.;Santander, J.;San Paulo, A.;Shakouri, A.;Fonseca, L.;
12:167:7 Template-free inorganic synthesis of silica-based nanotubes and their self-assembly to mesocrystals
DOI:10.1039/c2jm32100a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:3 AU: Sedlmaier, Stefan J.;Dennenwaldt, Teresa;Scheu, Christina;Schnick, Wolfgang;
12:167:8 Unprecedented Zeolite-Like Framework Topology Constructed from Cages with 3-Rings in a Barium Oxonitridophosphate
DOI:10.1021/ja202159e JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:20 AU: Sedlmaier, Stefan J.;Doeblinger, Markus;Oeckler, Oliver;Weber, Johannes;Guenne, Joern Schmedt Auf Der;Schnick, Wolfgang;
12:167:9 An effective method for the synthesis of 3D inorganic Ln(III)-K(I) sulfate open frameworks with unusually high thermal stability: in situ generation of sulfate anions
DOI:10.1039/c2jm16779d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Zhang, Huabin;Zhang, Mingjian;Tian, Chongbin;Li, Ning;Lin, Ping;Li, Zhihua;Du, Shaowu;
12:167:10 Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometry
DOI:10.1116/1.3491185 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:3 AU: Hung, Yung-Jr;Lee, San-Liang;Pan, Yen-Ting;Thibeault, Brian J.;Coldren, Larry A.;
12:167:11 Micropower thermoelectric generator from thin Si membranes
DOI:10.1016/j.nanoen.2013.12.007 JN:NANO ENERGY PY:2014
TC:3 AU: Perez-Marin, A. P.;Lopeandia, A. F.;Abad, Ll.;Ferrando-Villaba, P.;Garcia, G.;Lopez, A. M.;Munoz-Pascual, F. X.;Rodriguez-Viejo, J.;
12:167:12 Improved Thermal Behavior of Multiple Linked Arrays of Silicon Nanowires Integrated into Planar Thermoelectric Microgenerators
DOI:10.1007/s11664-013-2470-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Davila, Diana;Tarancon, Albert;Calaza, Carlos;Salleras, Marc;Fernandez-Regulez, Marta;San Paulo, Alvaro;Fonseca, Luis;
12:167:13 Seebeck coefficient in silicon nanowire arrays (vol 102, 143102, 2013)
DOI:10.1063/1.4813109 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Krali, Emiljana;Durrani, Zahid A. K.;
12:167:14 Seebeck coefficient of one electron
DOI:10.1063/1.4867775 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Durrani, Zahid A. K.;
12:167:15 Transport properties of Sb-doped Si nanowires
DOI:10.1016/j.jcrysgro.2012.05.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Nukala, Prathyusha;Sapkota, Gopal;Gali, Pradeep;Philipose, U.;
12:168:1 Local modification of GaAs nanowires induced by laser heating
DOI:10.1088/0957-4484/22/32/325701 JN:NANOTECHNOLOGY PY:2011
TC:10 AU: Yazji, S.;Zardo, I.;Soini, M.;Postorino, P.;Fontcuberta i Morral, A.;Abstreiter, G.;
12:168:2 E-1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering
DOI:10.1021/nl304528j JN:NANO LETTERS PY:2013
TC:8 AU: Zardo, Ilaria;Yazji, Sara;Hoermann, Nicolas;Hertenberger, Simon;Funk, Stefan;Mangialardo, Sara;Morkoetter, Stefanie;Koblmueller, Gregor;Postorino, Paolo;Abstreiter, Gerhard;
12:168:3 Pressure Tuning of the Optical Properties of GaAs Nanowires
DOI:10.1021/nn300228u JN:ACS NANO PY:2012
TC:12 AU: Zardo, Ilaria;Yazji, Sara;Marini, Carlo;Uccelli, Emanuele;Fontcuberta i Morral, Anna;Abstreiter, Gerhard;Postorino, Paolo;
12:168:4 Raman mapping of laser-induced changes and ablation of InAs nanowires
DOI:10.1007/s00339-013-7884-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: He, Jiayu;Chen, Pingping;Lu, Wei;Dai, Ning;Zhu, Da-Ming;
12:168:5 Raman scattering study of InAs nanowires under high pressure
DOI:10.1088/0957-4484/25/46/465704 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Majumdar, Dipanwita;Basu, Abhisek;Mukherjee, Goutam Dev;Ercolani, Daniele;Sorba, Lucia;Singha, Achintya;
12:168:6 Raman sensitivity to crystal structure in InAs nanowires
DOI:10.1063/1.3698115 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Panda, Jaya Kumar;Roy, Anushree;Singha, Achintya;Gemmi, Mauro;Ercolani, Daniele;Pellegrini, Vittorio;Sorba, Lucia;
12:168:7 Laser induced modification and ablation of InAs nanowires
DOI:10.1063/1.4709400 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: He, Jiayu;Chen, Pingping;Lu, Wei;Dai, Ning;Zhu, Da-Ming;
12:168:8 Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy
DOI:10.1063/1.4890212 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Pal, Suparna;Aggarwal, R.;Gupta, Vandna Kumari;Ingale, Alka;
12:168:9 High pressure Raman scattering of silicon nanowires
DOI:10.1088/0957-4484/22/19/195707 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Khachadorian, Sevak;Papagelis, Konstantinos;Scheel, Harald;Colli, Alan;Ferrari, Andrea C.;Thomsen, Christian;
12:169:1 Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers
DOI:10.1063/1.3488610 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:27 AU: Fang, Z-Q;Claflin, B.;Look, D. C.;Green, D. S.;Vetury, R.;
12:169:2 Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode
DOI:10.1063/1.3600229 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:19 AU: Saadaoui, Salah;Ben Salem, Mohamed Mongi;Gassoumi, Malek;Maaref, Hassen;Gaquiere, Christophe;
12:169:3 Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect
DOI:10.1063/1.3491798 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Park, Young S.;Lee, Minyoung;Jeon, Kiyoung;Yoon, Im T.;Shon, Yoon;Im, Hyunsik;Park, C. J.;Cho, Hoon Y.;Han, Myung-Soo;
12:169:4 Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3459968 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Meneghesso, G.;Rossi, F.;Salviati, G.;Uren, M. J.;Munoz, E.;Zanoni, E.;
12:169:5 Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3660396 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:7 AU: Liu, L.;Ren, F.;Pearton, S. J.;Fitch, R. C.;Walker, D. E., Jr.;Chabak, K. D.;Gillespie, J. K.;Kossler, M.;Trejo, M.;Via, David;Crespo, A.;
12:169:6 Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
DOI:10.1063/1.3702458 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Saadaoui, Salah;Ben Salem, Mohamed Mongi;Gassoumi, Malek;Maaref, Hassen;Gaquiere, Christophe;
12:169:7 Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures
DOI:10.1063/1.3643000 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Osvald, J.;
12:169:8 Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy
DOI:10.1007/s11664-011-1741-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Fang, Z. -Q.;Claflin, B.;Look, D. C.;Chai, F.;Odekirk, B.;
12:169:9 A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
DOI:10.1063/1.3358140 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Gong, Chun;Simoen, Eddy;Posthuma, Niels;Van Kerschaver, Emmanuel;Poortmans, Jef;Mertens, Robert;
12:169:10 Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3584861 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Fu, Lihua;Lu, Hai;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;Chen, Tangsheng;Wei, Ke;Liu, Xinyu;
12:169:11 Analysis of electronic carrier traps in Cr-SrTiO3-based charge trap flash memory devices
DOI:10.1063/1.4729127 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Seo, Yujeong;Song, Min Yeong;Park, Soyun;Kim, Tae Geun;
12:169:12 Interface Electron Traps as a Source of Anomalous Capacitance in AlGaN/GaN Heterostructures
DOI:10.1007/s11664-013-2553-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:2 AU: Osvald, J.;
12:169:13 Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures
DOI:10.1063/1.4767367 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Nakano, Yoshitaka;Irokawa, Yoshihiro;Sumida, Yasunobu;Yagi, Shuichi;Kawai, Hiroji;
12:169:14 Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices
DOI:10.1063/1.4757413 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Seo, Yujeong;Song, Min Yeong;An, Ho-Myoung;Kim, Yeon Soo;Park, Bae Ho;Kim, Tae Geun;
12:169:15 Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
DOI:10.1116/1.4891168 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Liu, Lu;Xi, Yuyin;Ahn, Shihyun;Ren, Fan;Gila, Brent P.;Pearton, Stephen J.;Kravohenko, Ivan I.;
12:169:16 Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
DOI:10.1116/1.4884756 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:3 AU: Kumar, Vibhor;Maan, Anup Singh;Akhtar, Jamil;
12:169:17 A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation
DOI:10.1016/j.tsf.2013.10.077 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Tanaka, Takeshi;Shiojima, Kenji;Otoki, Yohei;Tokuda, Yutaka;
12:170:1 Simulated doping of Si from first principles using pseudoatoms
DOI:10.1103/PhysRevB.87.235305 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Sinai, Ofer;Kronik, Leeor;
12:170:2 Fermi level influence on the adsorption at semiconductor surfaces-ab initio simulations
DOI:10.1063/1.4817903 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Krukowski, Stanislaw;Kempisty, Pawel;Strak, Pawel;
12:170:3 Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface
DOI:10.1016/j.jcrysgro.2012.08.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Kempisty, Pawel;Krukowski, Stanislaw;
12:170:4 On the nature of Surface States Stark Effect at clean GaN(0001) surface
DOI:10.1063/1.4768256 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Kempisty, Pawel;Krukowski, Stanislaw;
12:170:5 Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
DOI:10.1063/1.4824800 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Krukowski, Stanislaw;Kempisty, Pawel;Strak, Pawel;
12:170:6 General aspects of the vapor growth of semiconductor crystals - A study based on DF1 simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
DOI:10.1016/j.jcrysgro.2013.12.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Kempisty, Pawel;Strak, Pawel;Sakowski, Konrad;Krukowski, Stanislaw;
12:170:7 The adsorption of Cs and residual gases on Ga0.5Al0.5As (001) beta(2) (2 x 4) surface: A first principles research
DOI:10.1016/j.apsusc.2013.11.016 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Yu, Xiaohua;Du, Yujie;Chang, Benkang;Wang, Honggang;Wang, Meishan;
12:170:8 Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation
DOI:10.1016/j.jcrysgro.2010.10.072 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:16 AU: Akiyama, Toru;Yamashita, Tomoki;Nakamura, Kohji;Ito, Tomonori;
12:170:9 Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
DOI:10.1016/j.jcrysgro.2013.10.061 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kempisty, Pawel;Strak, Pawel;Sakowski, Konrad;Krukowski, Stanislaw;
12:170:10 DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
DOI:10.1016/j.jcrysgro.2014.06.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kempisty, Pawel;Strak, Pawel;Sakowski, Konrad;Krukowski, Stanislaw;
12:170:11 Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position
DOI:10.1016/j.jcrysgro.2013.10.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kempisty, Pawel;Strak, Pawel;Sakowski, Konrad;Krukowski, Stanislaw;
12:170:12 Metallicity of InN and GaN surfaces exposed to NH3
DOI:10.1103/PhysRevB.85.033308 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Walkosz, Weronika;Zapol, Peter;Stephenson, G. Brian;
12:170:13 Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
DOI:10.1063/1.4863338 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Krukowski, Stanislaw;Kempisty, Pawel;Strak, Pawel;Sakowski, Konrad;
12:170:14 Ab initio-based study for adatom kinetics on AlN(0001) surfaces during metal-organic vapor-phase epitaxy growth
DOI:10.1063/1.4729479 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Akiyama, Toru;Nakamura, Kohji;Ito, Tomonori;
12:171:1 Control of the interfacial abruptness of Au-catalyzed Si-Si1-xGex heterostructured nanowires grown by vapor-liquid-solid
DOI:10.1116/1.4867264 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:2 AU: Periwal, Priyanka;Baron, Thierry;Latu-Romain, Laurence;Salem, Bassem;Bassani, Franck;Patriarche, Gilles;Gentile, Pascal;
12:171:2 Effect of HCl on the doping and shape control of silicon nanowires
DOI:10.1088/0957-4484/23/21/215702 JN:NANOTECHNOLOGY PY:2012
TC:25 AU: Gentile, P.;Solanki, A.;Pauc, N.;Oehler, F.;Salem, B.;Rosaz, G.;Baron, T.;Den Hertog, M.;Calvo, V.;
12:171:3 High density and taper-free boron doped Si1-xGex nanowire via two-step growth process
DOI:10.1116/1.4883225 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Periwal, Priyanka;Salem, Bassem;Bassani, Franck;Baron, Thierry;Barnes, Jean-Paul;
12:171:4 Impact of n-type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy
DOI:10.1103/PhysRevB.89.115316 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Beaudoin, A.;Salem, B.;Baron, T.;Gentile, P.;Morris, D.;
12:171:5 Vertically integrated silicon-germanium nanowire field-effect transistor
DOI:10.1063/1.3660244 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Rosaz, G.;Salem, B.;Pauc, N.;Potie, A.;Gentile, P.;Baron, T.;
12:171:6 Controlled growth of SiGe nanowires by addition of HCl in the gas phase
DOI:10.1063/1.3610409 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Potie, Alexis;Baron, Thierry;Latu-Romain, Laurence;Rosaz, Guillaume;Salem, Bassem;Montes, Laurent;Gentile, Pascal;Kreisel, Jens;Roussel, Herve;
12:171:7 Growth strategies to control tapering in Ge nanowires
DOI:10.1063/1.4870875 JN:APL MATERIALS PY:2014
TC:3 AU: Periwal, P.;Baron, T.;Gentile, P.;Salem, B.;Bassani, F.;
12:171:8 Fabrication of high-density Si and SixGe1-x nanowire arrays based on the single step plasma etching process
DOI:10.1116/1.4812792 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Martin, Mickael;Avertin, Sebastien;Chevolleau, Thierry;Dhalluin, Florian;Ollivier, Maelig;Baron, Thierry;Joubert, Olivier;Hartmann, Jean Michel;
12:171:9 Ambient field effects on the current-voltage characteristics of nanowire field effect transistors
DOI:10.1063/1.3555426 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Karmalkar, Shreepad;Maheswaran, K. R. K.;Gurugubelli, Vijayakumar;
12:172:1 Quantitative Kelvin probe force microscopy of current-carrying devices
DOI:10.1063/1.4793480 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Fuller, Elliot J.;Pan, Deng;Corso, Brad L.;Gul, O. Tolga;Gomez, Jose R.;Collins, Philip G.;
12:172:2 Mean free paths in single-walled carbon nanotubes measured by Kelvin probe force microscopy
DOI:10.1103/PhysRevB.89.245450 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Fuller, Elliot J.;Pan, Deng;Corso, Brad L.;Gul, O. Tolga;Collins, Philip G.;
12:172:3 One-Dimensional Poole-Frenkel Conduction in the Single Defect Limit
DOI:10.1021/acs.nanolett.5b01506 JN:NANO LETTERS PY:2015
TC:0 AU: Pan, Deng;Fuller, Elliot J.;Guel, O. Tolga;Collins, Philip G.;
12:172:4 Quantitative non-contact voltage profiling of quasi one-dimensional nanoelectronic devices
DOI:10.1063/1.4880733 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jeong, Huiseong;Ahn, Y. H.;Lee, Soonil;Park, Ji-Yong;
12:172:5 Low Bias Electron Scattering in Structure-Identified Single Wall Carbon Nanotubes: Role of Substrate Polar Phonons
DOI:10.1103/PhysRevLett.107.146601 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:9 AU: Chandra, Bhupesh;Perebeinos, Vasili;Berciaud, Stephane;Katoch, Jyoti;Ishigami, Masa;Kim, Philip;Heinz, Tony F.;Hone, James;
12:172:6 Scanning Gate Spectroscopy and Its Application to Carbon Nanotube Defects
DOI:10.1021/nl103935r JN:NANO LETTERS PY:2011
TC:13 AU: Hunt, Steven R.;Wan, Danny;Khalap, Vaikunth R.;Corso, Brad L.;Collins, Philip G.;
12:172:7 Distinguishing carbon nanotube defect chemistry using scanning gate spectroscopy
DOI:10.1103/PhysRevB.85.235418 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Hunt, Steven R.;Fuller, Elliot J.;Corso, Brad L.;Collins, Philip G.;
12:172:8 Local potential profiling of operating carbon nanotube transistor using frequency-modulation high-frequency electrostatic force microscopy
DOI:10.1063/1.4774265 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Ito, Masanao;Kobayashi, Kei;Miyato, Yuji;Matsushige, Kazumi;Yamada, Hirofumi;
12:172:9 Atomistic Oxidation Mechanism of a Carbon Nanotube in Nitric Acid
DOI:10.1103/PhysRevLett.104.066401 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:13 AU: Kanai, Yosuke;Khalap, Vaikunth R.;Collins, Philip G.;Grossman, Jeffrey C.;
12:172:10 Zener tunneling in the electrical transport of quasimetallic carbon nanotubes
DOI:10.1103/PhysRevB.86.155433 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Kane, Gaston;Lazzeri, Michele;Mauri, Francesco;
12:172:11 Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates
DOI:10.1016/j.mseb.2011.10.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:6 AU: Kwon, Bong Jun;Lee, Kyung Moon;Shin, Hae-Young;Kim, Jinwoong;Liu, Jinzhang;Yoon, Seokhyun;Lee, Soonil;Ahn, Y. H.;Park, Ji-Yong;
12:173:1 Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
DOI:10.1063/1.3643139 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Lv, Yuanjie;Lin, Zhaojun;Meng, Lingguo;Yu, Yingxia;Luan, Chongbiao;Cao, Zhifang;Chen, Hong;Sun, Baoquan;Wang, Zhanguo;
12:173:2 Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.3569138 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Lv, Yuanjie;Lin, Zhaojun;Zhang, Yu;Meng, Lingguo;Luan, Chongbiao;Cao, Zhifang;Chen, Hong;Wang, Zhanguo;
12:173:3 Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4752232 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Luan, Chongbiao;Lin, Zhaojun;Lv, Yuanjie;Meng, Lingguo;Yu, Yingxia;Cao, Zhifang;Chen, Hong;Wang, Zhanguo;
12:173:4 Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4820960 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Lv, Yuanjie;Feng, Zhihong;Han, Tingting;Dun, Shaobo;Gu, Guodong;Yin, Jiayun;Sheng, Baicheng;Liu, Bo;Fang, Yulong;Cai, Shujun;Lin, Zhaojun;Luan, Chongbiao;Yang, Qihao;
12:173:5 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4891258 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Luan, Chongbiao;Lin, Zhaojun;Lv, Yuanjie;Zhao, Jingtao;Wang, Yutang;Chen, Hong;Wang, Zhanguo;
12:173:6 Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
DOI:10.1007/s00339-014-8403-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Luan, Chongbiao;Lin, Zhaojun;Lv, Yuanjie;Feng, Zhihong;Zhao, Jingtao;Yang, Qihao;Yang, Ming;
12:173:7 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
DOI:10.1063/1.3569594 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Lv, Yuanjie;Lin, Zhaojun;Corrigan, Timothy D.;Zhao, Jianzhi;Cao, Zhifang;Meng, Lingguo;Luan, Chongbiao;Wang, Zhanguo;Chen, Hong;
12:173:8 The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4889925 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Lv, Yuanjie;Feng, Zhihong;Lin, Zhaojun;Ji, Ziwu;Zhao, Jingtao;Gu, Guodong;Han, Tingting;Yin, Jiayun;Liu, Bo;Cai, Shujun;
12:173:9 Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4752254 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Luan, Chongbiao;Lin, Zhaojun;Feng, Zhihong;Meng, Lingguo;Lv, Yuanjie;Cao, Zhifang;Yu, Yingxia;Wang, Zhanguo;
12:173:10 Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
DOI:10.1063/1.4821547 JN:AIP ADVANCES PY:2013
TC:3 AU: Yu, Yingxia;Lin, Zhaojun;Luan, Chongbiao;Lv, Yuanjie;Feng, Zhihong;Yang, Ming;Wang, Yutang;Chen, Hong;
12:173:11 Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors
DOI:10.1063/1.3533941 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Moradi, Maziar;Valizadeh, Pouya;
12:174:1 Absorbing photonic crystals for silicon thin-film solar cells: Design, fabrication and experimental investigation
DOI:10.1016/j.solmat.2010.11.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:35 AU: Meng, Xianqin;Gomarcl, Guillaume;El Daif, Ounsi;Drouard, Emmanuel;Orobtchouk, Regis;Kaminski, Anne;Fave, Alain;Lemiti, Mustapha;Abramov, Alexei;Roca i Cabarrocas, Pere;Seassal, Christian;
12:174:2 Modal approach for tailoring the absorption in a photonic crystal membrane
DOI:10.1063/1.4730443 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Peretti, Romain;Gomard, Guillaume;Seassal, Christian;Letartre, Xavier;Drouard, Emmanuel;
12:174:3 Frequential and temporal analysis of two-dimensional photonic crystals for absorption enhancement in organic solar cells
DOI:10.1016/j.solmat.2013.06.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Peres, L.;Vigneras, V.;Fasquel, S.;
12:174:4 Photon management in two-dimensional disordered media
DOI:10.1038/NMAT3442 JN:NATURE MATERIALS PY:2012
TC:78 AU: Vynck, Kevin;Burresi, Matteo;Riboli, Francesco;Wiersma, Diederik S.;
12:174:5 Blue light absorption enhancement based on vertically channelling modes in nano-holes arrays
DOI:10.1063/1.4864267 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Gomard, Guillaume;Peretti, Romain;Callard, Segolene;Meng, Xianqin;Artinyan, Remy;Deschamps, Thierry;Roca i Cabarrocas, Pere;Drouard, Emmanuel;Seassal, Christian;
12:174:6 Two-dimensional photonic crystal for absorption enhancement in hydrogenated amorphous silicon thin film solar cells
DOI:10.1063/1.3506702 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:37 AU: Gomard, Guillaume;Drouard, Emmanuel;Letartre, Xavier;Meng, Xianqin;Kaminski, Anne;Fave, Alain;Lemiti, Mustapha;Garcia-Caurel, Enric;Seassal, Christian;
12:174:7 Ultrathin crystalline-silicon solar cells with embedded photonic crystals
DOI:10.1063/1.3680602 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Mallick, Shrestha Basu;Agrawal, Mukul;Wangperawong, Artit;Barnard, Edward S.;Singh, Kaushal K.;Visser, Robert J.;Brongersma, Mark L.;Peumans, Peter;
12:174:8 Hot spot engineering for light absorption enhancement of solar cells with a super-structured transparent conducting electrode
DOI:10.1063/1.4821156 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Smaali, R.;Centeno, E.;Moreau, A.;
12:174:9 Inhibition of light emission in a 2.5D photonic structure
DOI:10.1063/1.4887805 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Peretti, Romain;Seassal, Christian;Viktorovich, Pierre;Letartre, Xavier;
12:174:10 Optically optimal wavelength-scale patterned ITO/ZnO composite coatings for thin film solar cells
DOI:10.1063/1.3703670 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Moreau, Antoine;Smaali, Rafik;Centeno, Emmanuel;Seassal, Christian;
12:174:11 Charge yield potential of indoor-operated solar cells incorporated into Product Integrated Photovoltaic (PIPV)
DOI:10.1016/j.renene.2010.07.018 JN:RENEWABLE ENERGY PY:2011
TC:12 AU: Reich, N. H.;van Sark, W. G. J. H. M.;Turkenburg, W. C.;
12:175:1 Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency
DOI:10.1103/PhysRevLett.108.097403 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:16 AU: Santhanam, Parthiban;Gray, Dodd Joseph, Jr.;Ram, Rajeev J.;
12:175:2 The challenge of unity wall plug efficiency: The effects of internal heating on the efficiency of light emitting diodes
DOI:10.1063/1.3285431 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Heikkila, Oskari;Oksanen, Jani;Tulkki, Jukka;
12:175:3 Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures
DOI:10.1063/1.4894005 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Olsson, Anders;Aierken, Abuduwayiti;Jussila, Henri;Bauer, Jan;Oksanen, Jani;Breitenstein, Otwin;Lipsanen, Harri;Tulkki, Jukka;
12:175:4 Design for enhanced thermo-electric pumping in light emitting diodes
DOI:10.1063/1.4821266 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Gray, Dodd J., Jr.;Santhanam, Parthiban;Ram, Rajeev J.;
12:175:5 Photon recycling effect on electroluminescent refrigeration
DOI:10.1063/1.3676249 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Lee, Kuan-Chen;Yen, Shun-Tung;
12:175:6 Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling
DOI:10.1063/1.4811759 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Bender, Daniel A.;Cederberg, Jeffrey G.;Wang, Chengao;Sheik-Bahae, Mansoor;
12:175:7 Anti-Stokes luminescence in the light of second order perturbation theory
DOI:10.1063/1.4901075 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bhattacharya, Rupak;Pal, Bipul;Bansal, Bhavtosh;
12:175:8 Analysis of heterostructures for electroluminescent refrigeration and light emitting without heat generation
DOI:10.1063/1.3326944 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Yen, Shun-Tung;Lee, Kuan-Chen;
12:175:9 Semiconductor laser monolithically pumped with a light emitting diode operating in the thermoelectrophotonic regime
DOI:10.1063/1.4793656 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Liu, X.;Zhao, G.;Zhang, Y.;Deppe, D. G.;
12:175:10 Room temperature thermo-electric pumping in mid-infrared light-emitting diodes
DOI:10.1063/1.4828566 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Santhanam, Parthiban;Huang, Duanni;Ram, Rajeev J.;Remennyi, Maxim A.;Matveev, Boris A.;
12:175:11 Thermophotonic heat pump-a theoretical model and numerical simulations
DOI:10.1063/1.3419716 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Oksanen, Jani;Tulkki, Jukka;
12:175:12 Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration
DOI:10.1063/1.4880799 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Khurgin, Jacob B.;
12:175:13 Effect of n-p-n heterostructures on interface recombination and semiconductor laser cooling
DOI:10.1063/1.3517144 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Rupper, G.;Kwong, N. H.;Binder, R.;Li, Ch. -Y.;Sheik-Bahae, M.;
12:175:14 Precision, all-optical measurement of external quantum efficiency in semiconductors
DOI:10.1063/1.3580259 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Wang, Chengao;Li, Chia-Yeh;Hasselbeck, Michael P.;Imangholi, Babak;Sheik-Bahae, Mansoor;
12:175:15 Self-Consistent Drift-Diffusion Transport in Thermoelectrics and Implications for Measuring the Scattering Parameter
DOI:10.1007/s11664-009-1021-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Santhanam, Parthiban;Ram, Rajeev J.;
12:176:1 MBE growth of atomically smooth non-polar cubic AlN
DOI:10.1016/j.jcrysgro.2010.01.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:30 AU: Schupp, T.;Lischka, K.;As, D. J.;
12:176:2 Single-photon emission from cubic GaN quantum dots
DOI:10.1063/1.4858966 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Kako, Satoshi;Holmes, Mark;Sergent, Sylvain;Buerger, Matthias;As, Donat J.;Arakawa, Yasuhiko;
12:176:3 Droplet epitaxy of zinc-blende GaN quantum dots
DOI:10.1016/j.jcrysgro.2010.07.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Schupp, T.;Meisch, T.;Neuschl, B.;Feneberg, M.;Thonke, K.;Lischka, K.;As, D. J.;
12:176:4 Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities
DOI:10.1063/1.4813408 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Buerger, M.;Callsen, G.;Kure, T.;Hoffmann, A.;Pawlis, A.;Reuter, D.;As, D. J.;
12:176:5 Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation
DOI:10.1016/j.jcrysgro.2010.12.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Schupp, T.;Meisch, T.;Neuschl, B.;Feneberg, M.;Thonke, K.;Lischka, K.;As, D. J.;
12:176:6 Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
DOI:10.1063/1.4793653 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Buerger, M.;Ruth, M.;Declair, S.;Foerstner, J.;Meier, C.;As, D. J.;
12:176:7 Properties of nitrogen-doped titanium oxides
DOI:10.1016/j.jcrysgro.2011.12.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: David, D. G. F.;Guerreiro, J.;da Silva, M. V. S.;Castro Meira, M. V.;Bargiela, P.;de Almeida, J. S.;Freitas, J. A., Jr.;Ferreira da Silva, A.;
12:176:8 Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
DOI:10.1016/j.jcrysgro.2012.12.058 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Buerger, M.;Kemper, R. M.;Bader, C. A.;Ruth, M.;Declair, S.;Meier, C.;Foerstner, J.;As, D. J.;
12:176:9 Inclusion behavior of Cs, Sr, and Ba impurities in LiCl crystal formed by layer-melt crystallization: Combined first-principles calculation and experimental study
DOI:10.1016/j.jcrysgro.2013.02.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Choi, Jung-Hoon;Cho, Yung-Zun;Lee, Tae-Kyo;Eun, Hee-Chul;Kim, Jun-Hong;Kim, In-Tae;Park, Geun-Il;Kang, Jeung-Ku;
12:176:10 Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme
DOI:10.1557/jmr.2012.432 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Chen, Xiaohong;Lin, Na;Cai, Duanjun;Zhang, Yong;Chen, Hangyang;Kang, Junyong;
12:176:11 Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers
DOI:10.1063/1.4811735 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Zheng, Zhiyuan;Chen, Zimin;Chen, Yingda;Wu, Hualong;Huang, Shanjin;Fan, Bingfeng;Wu, Zhisheng;Wang, Gang;Jiang, Hao;
12:176:12 Understanding the cubic AlN growth plane from first principles
DOI:10.1016/j.jcrysgro.2010.07.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Rauls, E.;Wiebe, J.;Schmidt, W. G.;
12:176:13 Lasing properties of InP/(Ga0.51In0.49)P quantum dots in microdisk cavities
DOI:10.1103/PhysRevB.83.205305 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Witzany, M.;Rossbach, R.;Schulz, W. -M.;Jetter, M.;Michler, P.;Liu, T. -L.;Hu, E.;Wiersig, J.;Jahnke, F.;
12:177:1 Multimode Fabry-Perot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires
DOI:10.1021/nl101522j JN:NANO LETTERS PY:2010
TC:27 AU: Kretinin, Andrey V.;Popovitz-Biro, Ronit;Mahalu, Diana;Shtrikman, Hadas;
12:177:2 Crystal Structure and Transport in Merged InAs Nanowires MBE Grown on (001) InAs
DOI:10.1021/nl402571s JN:NANO LETTERS PY:2013
TC:4 AU: Kang, Jung-Hyun;Cohen, Yonatan;Ronen, Yuval;Heiblum, Moty;Buczko, Ryszard;Kacman, Perla;Popovitz-Biro, Ronit;Shtrikman, Hadas;
12:177:3 Structure-Dependent Ferromagnetism in Mn-Doped III-V Nanowires
DOI:10.1021/nl201687q JN:NANO LETTERS PY:2011
TC:19 AU: Galicka, Marta;Buczko, Ryszard;Kacman, Perla;
12:177:4 All-Wurtzite (In,Ga)As-(Ga,Mn)As Core Shell Nanowires Grown by Molecular Beam Epitaxy
DOI:10.1021/nl500896d JN:NANO LETTERS PY:2014
TC:3 AU: Siusys, Aloyzas;Sadowski, Janusz;Sawicki, Maciej;Kret, Slawomir;Wojciechowski, Tomasz;Gas, Katarzyna;Szuszkiewicz, Wojciech;Kaminska, Agnieszka;Story, Tomasz;
12:177:5 Confinement-dependent ferromagnetism in Mn-doped InAs quantum dots embedded in InP nanowires
DOI:10.1103/PhysRevB.86.125445 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Lima, Erika N.;Schmidt, Tome M.;
12:177:6 Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy
DOI:10.1063/1.4799624 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Bouravleuv, Alexei;Cirlin, George;Sapega, Victor;Werner, Peter;Savin, Alexander;Lipsanen, Harri;
12:177:7 Detailed modeling of the epitaxial growth of GaAs nanowires
DOI:10.1088/0957-4484/21/4/045602 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: De Jong, E.;LaPierre, R. R.;Wen, J. Z.;
12:177:8 Structural and magnetic properties of hybrid ferromagnetic metal/semiconductor (ZnTe)/Co core-shell nanowires
DOI:10.1016/j.jcrysgro.2014.11.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Misiuna, P. A.;Dluzewski, P.;Wojciechowski, T.;Milinska, E.;Kurowska, B.;Wiater, M.;Wawro, A.;Wojtowicz, T.;Baczewski, L. T.;
12:177:9 Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE
DOI:10.1116/1.3678203 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:3 AU: Tivakornsasithorn, K.;Pimpinella, R. E.;Nguyen, V.;Liu, X.;Dobrowolska, M.;Furdyna, J. K.;
12:178:1 Compressive Stress Effect on the Radial Elastic Modulus of Oxidized Si Nanowires
DOI:10.1021/nl100062n JN:NANO LETTERS PY:2010
TC:22 AU: Stan, G.;Krylyuk, S.;Davydov, A. V.;Cook, R. F.;
12:178:2 Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories
DOI:10.1021/nl202434k JN:NANO LETTERS PY:2011
TC:10 AU: Tang, Xiaohui;Krzeminski, Christophe;des Etangs-Levallois, Aurelien Lecavelier;Chen, Zhenkun;Dubois, Emmanuel;Kasper, Erich;Karmous, Alim;Reckinger, Nicolas;Flandre, Denis;Francis, Laurent A.;Colinge, Jean-Pierre;Raskin, Jean-Pierre;
12:178:3 Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime
DOI:10.1063/1.3643038 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Kim, Byung-Hyun;Pamungkas, Mauludi Ariesto;Park, Mina;Kim, Gyubong;Lee, Kwang-Ryeol;Chung, Yong-Chae;
12:178:4 Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning
DOI:10.1088/0957-4484/24/49/495301 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Han, Xiang-Lei;Larrieu, Guilhem;Krzeminski, Christophe;
12:178:5 Atomistic modeling of bending properties of oxidized silicon nanowires
DOI:10.1063/1.4868318 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Ilinov, Andrey;Kuronen, Antti;
12:178:6 Size-dependent elastic properties of oxidized silicon nanorods
DOI:10.1063/1.4902947 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Ilinov, Andrey;Kuronen, Antti;
12:178:7 Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy
DOI:10.1557/jmr.2011.354 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:6 AU: Stan, Gheorghe;Krylyuk, Sergiy;Davydov, Albert V.;Cook, Robert F.;
12:178:8 Understanding of the retarded oxidation effects in silicon nanostructures
DOI:10.1063/1.4729410 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Krzeminski, C. D.;Han, X. -L.;Larrieu, G.;
12:178:9 Molecular Dynamics Simulation of Mechanical Properties of Single-Crystal Bismuth Telluride Nanowire
DOI:10.1007/s11664-010-1204-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:4 AU: Tong, Y.;Yi, F. J.;Liu, L. S.;Zhang, Q. J.;
12:178:10 Residual order in the thermal oxide of a fully strained SiGe alloy on Si
DOI:10.1103/PhysRevB.81.033308 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Shimura, Takayoshi;Okamoto, Yuki;Inoue, Tomoyuki;Hosoi, Takuji;Watanabe, Heiji;
12:178:11 Interfacial reaction-dominated full oxidation of 5 nm diameter silicon nanowires
DOI:10.1063/1.4764004 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Kim, Ilsoo;Park, Tae-Eon;Lee, Ki-Young;Ha, Ryong;Kim, Byung-Hyun;Chung, Yong-Chae;Lee, Kwang-Ryeol;Choi, Heon-Jin;
12:179:1 Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes
DOI:10.1007/s11664-012-2184-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Kordos, P.;Skriniarova, J.;Chvala, A.;Florovic, M.;Kovac, J.;Donoval, D.;
12:179:2 Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes
DOI:10.1063/1.3525931 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Lim, Wantae;Jeong, Jae-Hyun;Lee, Jae-Hoon;Hur, Seung-Bae;Ryu, Jong-Kyu;Kim, Ki-Se;Kim, Tae-Hyung;Song, Sang Yeob;Yang, Jong-In;Pearton, S. J.;
12:179:3 Quantum efficiency of GaN photocathode under different illumination
DOI:10.1063/1.3614555 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Wang, Xiaohui;Chang, Benkang;Du, Yujie;Qiao, Jianliang;
12:179:4 Theoretical study of Cs adsorption on GaN(0001) surface
DOI:10.1016/j.apsusc.2012.04.055 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Du Yujie;Chang Benkang;Wang Xiaohui;Zhang Junju;Li Biao;Wang Meishan;
12:179:5 Influence of the p-type doping concentration on reflection-mode GaN photocathode
DOI:10.1063/1.3556656 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Wang, Xiaohui;Chang, Benkang;Ren, Ling;Gao, Pin;
12:179:6 Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
DOI:10.1063/1.3592284 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Arehart, A. R.;Allerman, A. A.;Ringel, S. A.;
12:179:7 Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature
DOI:10.1016/j.mssp.2014.07.053 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Akkaya, A.;Esmer, L.;Karaaslan, T.;Cetin, H.;Ayyildiz, E.;
12:179:8 First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces
DOI:10.1016/j.mssp.2013.07.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Yu, Xiaohua;Ge, Zhonghao;Chang, Benkang;Wang, Meishan;
12:179:9 Effect of n(+)GaN cap polarization field on Cs-free GaN photocathode characteristics
DOI:10.1063/1.3476341 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Tripathi, N.;Bell, L. D.;Nikzad, S.;Shahedipour-Sandvik, F.;
12:179:10 On the surface characterization of an Al2O3 charge state conversion surface using ion scattering and atomic force microscope measurements
DOI:10.1016/j.apsusc.2012.03.139 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Riedo, A.;Ruosch, M.;Frenz, M.;Scheer, J. A.;Wurz, P.;
12:179:11 Effect of long duration UV irradiation on diamondlike carbon surfaces in the presence of a hydrocarbon gaseous atmosphere
DOI:10.1063/1.3517832 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Riedo, A.;Wahlstroem, P.;Scheer, J. A.;Wurz, P.;Tulej, M.;
12:179:12 Self-supporting CVD diamond charge state conversion surfaces for high resolution imaging of low-energy neutral atoms in space plasmas
DOI:10.1016/j.apsusc.2014.05.206 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Neuland, M. B.;Riedo, A.;Scheer, J. A.;Wurz, P.;
12:179:13 Novel Cs-Free GaN Photocathodes
DOI:10.1007/s11664-010-1507-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Tripathi, Neeraj;Bell, L. D.;Nikzad, Shouleh;Tungare, Mihir;Suvarna, Puneet H.;Sandvik, Fatemeh Shahedipour;
12:179:14 Schottky metal-GaN interface KOH pretreatment for improved device performance
DOI:10.1116/1.3299253 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:1 AU: Shah, P. B.;Batyrev, I.;Derenge, M. A.;Lee, U.;Nyguen, C.;Jones, K. A.;
12:179:15 First principles calculations of structural, electronic and optical properties of zinc aluminum oxide
DOI:10.1016/j.mssp.2012.03.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:4 AU: Arbi, M.;Benramdane, N.;Kebbab, Z.;Miloua, R.;Chiker, F.;Khenata, R.;
12:179:16 Electron transport in passivated AlGaN/GaN/Si HEMTs
DOI:10.1016/j.mssp.2013.06.025 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Gassoumi, Malek;Mosbahi, Hana;Soltani, Ali;Sbrugnera-Avramovic, Vanessa;Zaidi, Mohamed Ali;Gaquiere, Christophe;Mejri, Houcine;Maaref, Hassen;
12:180:1 Surface photovoltage in undoped n-type GaN
DOI:10.1063/1.3430979 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:39 AU: Reshchikov, M. A.;Foussekis, M.;Baski, A. A.;
12:180:2 XPS for chemical- and charge-sensitive analyses
DOI:10.1016/j.tsf.2013.02.002 JN:THIN SOLID FILMS PY:2013
TC:12 AU: Sezen, Hikmet;Suzer, Sefik;
12:180:3 Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
DOI:10.1063/1.3511541 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Wei, J. D.;Li, S. F.;Atamuratov, A.;Wehmann, H. -H.;Waag, A.;
12:180:4 Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy
DOI:10.1063/1.3564892 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Sezen, Hikmet;Ozbay, Ekmel;Aktas, Ozgur;Suzer, Sefik;
12:180:5 Temperature-dependent Kelvin probe measurements of band bending in p-type GaN
DOI:10.1063/1.4747203 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Foussekis, M.;McNamara, J. D.;Baski, A. A.;Reshchikov, M. A.;
12:180:6 Photoresponse of PbS nanoparticles-quaterthiophene films prepared by gaseous deposition as probed by XPS
DOI:10.1116/1.4709386 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:3 AU: Majeski, Michael W.;Pleticha, F. Douglas;Bolotin, Igor L.;Hanley, Luke;Yilmaz, Eda;Suzer, Sefik;
12:180:7 Effects of polarity and surface treatment on Ga- and N-polar bulk GaN
DOI:10.1116/1.4751276 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:3 AU: Foussekis, Michael;Ferguson, Josephus D.;McNamara, Joy D.;Baski, Alison A.;Reshchikov, Michael A.;
12:180:8 Low-temperature surface photovoltage in p-type GaN
DOI:10.1116/1.4840376 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: McNamara, Joy D.;Foussekis, Michael;Baski, Alison A.;Reshchikov, Michael A.;
12:180:9 Chemically Specific Dynamic Characterization of Photovoltaic and Photoconductivity Effects of Surface Nanostructures
DOI:10.1021/nn9014196 JN:ACS NANO PY:2010
TC:9 AU: Ekiz, Okan Oener;Mizrak, Koray;Dana, Aykutlu;
12:180:10 XPS for probing the dynamics of surface voltage and photovoltage in GaN
DOI:10.1016/j.apsusc.2014.06.089 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Sezen, Hikmet;Ozbay, Ekmel;Suzer, Sefik;
12:180:11 Charging/discharging dynamics of CdS and CdSe films under photoillumination using dynamic x-ray photoelectron spectroscopy
DOI:10.1116/1.3289319 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:4 AU: Sezen, Hikmet;Suzer, Sefik;
12:180:12 Comparison of surface photovoltage behavior for n-type versus p-type GaN
DOI:10.1116/1.3605299 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:7 AU: Foussekis, M.;Baski, A. A.;Reshchikov, M. A.;
12:180:13 Characterization of p-AlxGa1-xAs/p-GaAs structure studied by surface photovoltage in metal-insulator-semiconductor configuration
DOI:10.1016/j.mssp.2013.12.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Liu, Jian;Fan, Cui;Chen, Xinlong;Jiao, GangCheng;Hu, Canglu;Qian, Yunsheng;
12:181:1 Strain-induced energy gap variation in ZnTe/ZnMgTe core/shell nanowires
DOI:10.1063/1.4873355 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wojnar, P.;Zielinski, M.;Janik, E.;Zaleszczyk, W.;Wojciechowski, T.;Wojnar, R.;Szymura, M.;Klopotowski, L.;Baczewski, L. T.;Pietruchik, A.;Wiater, M.;Kret, S.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;
12:181:2 Spin Splitting Anisotropy in Single Diluted Magnetic Nanowire Heterostructures
DOI:10.1021/nl504853m JN:NANO LETTERS PY:2015
TC:2 AU: Szymura, Malgorzata;Wojnar, Piotr;Klopotowski, Lukasz;Suffczynski, Jan;Goryca, Mateusz;Smolenski, Tomasz;Kossacki, Piotr;Zaleszczyk, Wojciech;Wojciechowski, Tomasz;Karczewski, Grzegorz;Wojtowicz, Tomasz;Kossut, Jacek;
12:181:3 Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe
DOI:10.1021/nl4046476 JN:NANO LETTERS PY:2014
TC:4 AU: Rueda-Ponseca, P.;Bellet-Amalric, E.;Vigliaturo, R.;den Hertog, M.;Genuist, Y.;Andre, R.;Robin, E.;Artioli, A.;Stepanov, P.;Ferrand, D.;Kheng, K.;Tatarenko, S.;Cibert, J.;
12:181:4 Giant Spin Splitting in Optically Active ZnMnTe/ZnMgTe Core/Shell Nanowires
DOI:10.1021/nl300254w JN:NANO LETTERS PY:2012
TC:12 AU: Wojnar, Piotr;Janik, Elzbieta;Baczewski, Lech T.;Kret, Slawomir;Dynowska, Elzbieta;Wojciechowski, Tomasz;Suffczynski, Jan;Papierska, Joanna;Kossacki, Piotr;Karczewski, Grzegorz;Kossut, Jacek;Wojtowicz, Tomasz;
12:181:5 Optical properties of single ZnTe nanowires grown at low temperature
DOI:10.1063/1.4832055 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Artioli, A.;Rueda-Fonseca, P.;Stepanov, P.;Bellet-Amalric, E.;Den Hertog, M.;Bougerol, C.;Genuist, Y.;Donatini, F.;Andre, R.;Nogues, G.;Kheng, K.;Tatarenko, S.;Ferrand, D.;Cibert, J.;
12:181:6 Growth and optical properties of CdTe quantum dots in ZnTe nanowires
DOI:10.1063/1.3630004 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Wojnar, Piotr;Janik, Elzbieta;Baczewski, Lech T.;Kret, Slawomir;Karczewski, G.;Wojtowicz, Tomasz;Goryca, Mateusz;Kazimierczuk, Tomasz;Kossacki, Piotr;
12:181:7 Activation of an intense near band edge emission from ZnTe/ZnMgTe core/shell nanowires grown on silicon
DOI:10.1088/0957-4484/24/36/365201 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Wojnar, P.;Szymura, M.;Zaleszczyk, W.;Klopotowski, L.;Janik, E.;Wiater, M.;Baczewski, L. T.;Kret, S.;Karczewski, G.;Kossut, J.;Wojtowicz, T.;
12:181:8 Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite Ga1-xFexN
DOI:10.1103/PhysRevB.88.115208 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Rousset, J. -G.;Papierska, J.;Pacuski, W.;Golnik, A.;Nawrocki, M.;Stefanowicz, W.;Stefanowicz, S.;Sawicki, M.;Jakiela, R.;Dietl, T.;Navarro-Quezada, A.;Faina, B.;Li, T.;Bonanni, A.;Suffczynski, J.;
12:182:1 Optical studies and crystal field calculation of GaN nanorods doped with Yb3+ ions
DOI:10.1016/j.jallcom.2014.04.162 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Kallel, T.;Dammak, M.;Wang, J.;Jadwisienczak, W. M.;Wu, J.;Palai, R.;
12:182:2 Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering
DOI:10.1016/j.actamat.2013.02.016 JN:ACTA MATERIALIA PY:2013
TC:7 AU: Lorenz, K.;Nogales, E.;Miranda, S. M. C.;Franco, N.;Mendez, B.;Alves, E.;Tourbot, G.;Daudin, B.;
12:182:3 Molecular dynamics of irradiation-induced defect production in GaN nanowires
DOI:10.1103/PhysRevB.86.104114 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Ren, Wei;Kuronen, Antti;Nordlund, Kai;
12:182:4 Phase transformation, morphology evolution and luminescence property variation in Y2O3:Eu hollow microspheres
DOI:10.1016/j.jallcom.2012.06.134 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:8 AU: Wang, Qin;Guo, Jing;Jia, Wenjing;Liu, Baocang;Zhang, Jun;
12:182:5 Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures
DOI:10.1088/0957-4484/22/28/285706 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Nogales, E.;Hidalgo, P.;Lorenz, K.;Mendez, B.;Piqueras, J.;Alves, E.;
12:182:6 Structural phase and morphology control of tetragonal and hexagonal YPO4:Eu nanoflakes for tunable luminescence properties
DOI:10.1007/s10853-014-8147-x JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Wang, Qin;Li, Yingjun;Guo, Jing;Liu, Baocang;Dong, Alideertu;Xu, Guangran;Zhang, Jun;
12:182:7 Atomistic simulation of Er irradiation induced defects in GaN nanowires
DOI:10.1063/1.4896787 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Ullah, M. W.;Kuronen, A.;Stukowski, A.;Djurabekova, F.;Nordlund, K.;
12:182:8 Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments
DOI:10.1007/s10853-013-7811-x JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Lopez, I.;Lorenz, K.;Nogales, E.;Mendez, B.;Piqueras, J.;Alves, E.;Garcia, J. A.;
12:182:9 Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays
DOI:10.1088/0957-4484/22/4/045202 JN:NANOTECHNOLOGY PY:2011
TC:10 AU: Huang, Ying-Yuan;Chen, Liang-Yi;Chang, Chun-Hsiang;Sun, Yu-Hsuan;Cheng, Yun-Wei;Ke, Min-Yung;Lu, Yu-Hsin;Kuo, Hao-Chung;Huang, JianJang;
12:182:10 Defects in gallium nitride nanowires: First principles calculations
DOI:10.1063/1.3476280 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Wang, Zhiguo;Li, Jingbo;Gao, Fei;Weber, William J.;
12:182:11 The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy
DOI:10.1111/j.1551-2916.2010.04059.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:2 AU: Lee, Kuo-Hao;Chiou, Jau-Wern;Chen, Jin-Ming;Lee, Jyh-Fu;Braud, Alain;Lorenz, Katharina;Alves, Eduardo;Chen, In-Gann;
12:182:12 Key inventions in the history of nitride-based blue LED and LD (vol 300, pg 2, 2007)
DOI:10.1016/j.jcrysgro.2008.07.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Akasaki, I.;
12:183:1 Optical properties of II-VI colloidal quantum dot doped porous silicon microcavities
DOI:10.1063/1.3404183 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Qiao, Hong;Guan, Bin;Boecking, Till;Gal, Michael;Gooding, J. Justin;Reece, Peter J.;
12:183:2 Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors
DOI:10.1103/PhysRevB.85.195203 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Talwar, Devki N.;Feng, Zhe Chuan;Yang, Tzuen-Rong;
12:183:3 Raman scattering enhancement in photon-plasmon resonance mediated metal-dielectric microcavity
DOI:10.1063/1.4842995 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Guddala, Sriram;Dwivedi, Vindesh K.;Prakash, G. Vijaya;Rao, D. Narayana;
12:183:4 Structural and dynamical properties of Bridgman-grown CdSexTe1-x (0 < x <= 0.35) ternary alloys
DOI:10.1103/PhysRevB.87.165208 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Talwar, Devki N.;Feng, Zhe Chuan;Lee, Jyh-Fu;Becla, P.;
12:183:5 Atypical phonon modes in zinc-blende BN/GaN superlattices
DOI:10.1063/1.4812400 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Talwar, Devki N.;
12:183:6 Infrared reflectance and transmission spectra in II-VI alloys and superlattices
DOI:10.1103/PhysRevB.84.174203 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Talwar, Devki N.;Yang, Tzuen-Rong;Feng, Zhe Chuan;Becla, P.;
12:183:7 Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
DOI:10.1016/j.jcrysgro.2010.08.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Goh, W. H.;Patriarche, G.;Bonanno, P. L.;Gautier, S.;Moudakir, T.;Abid, M.;Orsal, G.;Sirenko, A. A.;Cai, Z. -H.;Martinez, A.;Ramdane, A.;Le Gratiet, L.;Troadec, D.;Soltani, A.;Ougazzaden, A.;
12:183:8 Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire
DOI:10.1016/j.optmat.2014.04.012 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Talwar, Devki N.;Liao, Ying Chieh;Chen, Li Chyong;Chen, Kuei Hsien;Feng, Zhe Chuan;
12:183:9 Nonlinear optical performance of periodic structures made from composites of polymers and Co3O4 nanoparticles
DOI:10.1063/1.3486162 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Zhu, X.;Wang, J.;Lau, P.;Nguyen, D.;Norwood, R. A.;Peyghambarian, N.;
12:183:10 Controlled emission from dye saturated single and coupled microcavities
DOI:10.1016/j.apsusc.2010.11.048 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Dwivedi, V. K.;Pradeesh, K.;Prakash, G. Vijaya;
12:183:11 Experimental investigation of photonic band gap influence on enhancement of Raman-scattering in metal-dielectric colloidal crystals
DOI:10.1063/1.4758315 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Guddala, Sriram;Kamanoor, Shadak Alee;Chiappini, Andrea;Ferrari, Maurizio;Desai, Narayana Rao;
12:183:12 Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices
DOI:10.1103/PhysRevB.82.085207 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Talwar, Devki N.;
12:183:13 Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)
DOI:10.1063/1.4790605 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Talwar, Devki N.;Yang, Tzuen-Rong;Lin, Hao Hsiung;Feng, Zhe Chuan;
12:183:14 Optical bistability in mesoporous silicon microcavity resonators
DOI:10.1063/1.3585782 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Anh Pham;Qiao, Hong;Guan, Bin;Gal, Michael;Gooding, J. Justin;Reece, Peter J.;
12:184:1 Cytocompatibility and Cellular Internalization Mechanisms of SiC/SiO2 Nanowires
DOI:10.1021/nl501255m JN:NANO LETTERS PY:2014
TC:1 AU: Cacchioli, A.;Ravanetti, F.;Alinovi, R.;Pinelli, S.;Rossi, F.;Negri, M.;Bedogni, E.;Campanini, M.;Galetti, M.;Goldoni, M.;Lagonegro, P.;Alfieri, R.;Bigi, F.;Salviati, G.;
12:184:2 Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires
DOI:10.1088/0957-4484/21/34/345702 JN:NANOTECHNOLOGY PY:2010
TC:22 AU: Fabbri, Filippo;Rossi, Francesca;Attolini, Giovanni;Salviati, Giancarlo;Iannotta, Salvatore;Aversa, Lucrezia;Verucchi, Roberto;Nardi, Marco;Fukata, Naoki;Dierre, Benjamin;Sekiguchi, Takashi;
12:184:3 Long Term Stability of Nanowire Nanoelectronics in Physiological Environments
DOI:10.1021/nl500070h JN:NANO LETTERS PY:2014
TC:18 AU: Zhou, Wei;Dai, Xiaochuan;Fu, Tian-Ming;Xie, Chong;Liu, Jia;Lieber, Charles M.;
12:184:4 Cellular Uptake and Cytotoxic Impact of Chemically Functionalized and Polymer-Coated Carbon Nanotubes
DOI:10.1002/smll.201101004 JN:SMALL PY:2011
TC:29 AU: Ali-Boucetta, Hanene;Al-Jamal, Khuloud T.;Mueller, Karin H.;Li, Shouping;Porter, Alexandra E.;Eddaoudi, Ayad;Prato, Maurizio;Bianco, Alberto;Kostarelos, Kostas;
12:184:5 Luminescence properties of SiC/SiO2 core-shell nanowires with different radial structure
DOI:10.1016/j.matlet.2011.12.059 JN:MATERIALS LETTERS PY:2012
TC:17 AU: Fabbri, Filippo;Rossi, Francesca;Attolini, Giovanni;Salviati, Giancarlo;Dierre, Benjamin;Sekiguchi, Takashi;Fukata, Naoki;
12:184:6 Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires
DOI:10.1016/j.scriptamat.2013.08.017 JN:SCRIPTA MATERIALIA PY:2013
TC:3 AU: Rossi, Francesca;Fabbri, Filippo;Tallarida, Massimo;Schmeisser, Dieter;Modreanu, Mircea;Attolini, Giovanni;Salviati, Giancarlo;
12:184:7 Investigating the plasmonics of a dipole-excited silver nanoshell: Mie theory versus finite element method
DOI:10.1088/0957-4484/21/31/315203 JN:NANOTECHNOLOGY PY:2010
TC:21 AU: Khoury, Christopher G.;Norton, Stephen J.;Vo-Dinh, Tuan;
12:184:8 The importance of cellular internalization of antibody-targeted carbon nanotubes in the photothermal ablation of breast cancer cells
DOI:10.1088/0957-4484/22/9/095101 JN:NANOTECHNOLOGY PY:2011
TC:27 AU: Marches, Radu;Mikoryak, Carole;Wang, Ru-Hung;Pantano, Paul;Draper, Rockford K.;Vitetta, Ellen S.;
12:184:9 Nano-enhanced!
DOI:10.1088/0957-4484/21/34/340201 JN:NANOTECHNOLOGY PY:2010
TC:0 AU: Demming, Anna;
12:185:1 Carrier dynamics in bulk GaN
DOI:10.1063/1.3673851 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:23 AU: Scajev, Patrik;Jarasiunas, Kestutis;Okur, Serdal;Oezguer, Uemit;Morkoc, Hadis;
12:185:2 Fast and slow carrier recombination transients in highly excited 4H-and 3C-SiC crystals at room temperature
DOI:10.1063/1.3459894 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:34 AU: Scajev, P.;Gudelis, V.;Jarasiunas, K.;Klein, P. B.;
12:185:3 Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers
DOI:10.1063/1.3591173 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Scajev, Patrik;Usikov, Alexander;Soukhoveev, Vitali;Aleksiejunas, Ramunas;Jarasiunas, Kestutis;
12:185:4 Large-k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
DOI:10.1103/PhysRevB.87.075202 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Vinattieri, Anna;Bogani, Franco;Cavigli, Lucia;Manzi, Donatella;Gurioli, Massimo;Feltin, Eric;Carlin, Jean-Francois;Martin, Denis;Butte, Raphael;Grandjean, Nicolas;
12:185:5 Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
DOI:10.1063/1.4752429 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Onuma, T.;Sakai, N.;Igaki, T.;Yamaguchi, T.;Yamaguchi, A. A.;Honda, T.;
12:185:6 Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry
DOI:10.1063/1.4854595 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Melnikov, A.;Mandelis, A.;Halliop, B.;Kherani, N. P.;
12:185:7 Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
DOI:10.1063/1.3674306 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Scajev, P.;Jarasiunas, K.;Oezguer, Ue;Morkoc, H.;Leach, J.;Paskova, T.;
12:185:8 Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
DOI:10.1007/s11664-010-1378-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:11 AU: Scajev, Patrik;Hassan, Jawad;Jarasiunas, Kestutis;Kato, Masashi;Henry, Anne;Bergman, J. Peder;
12:185:9 Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors
DOI:10.1016/j.tsf.2011.04.212 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Drummond, P. J.;Bhatia, D.;Kshirsagar, A.;Ramani, S.;Ruzyllo, J.;
12:185:10 Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions
DOI:10.1103/PhysRevB.82.115208 JN:PHYSICAL REVIEW B PY:2010
TC:2 AU: Cavigli, Lucia;Gabrieli, Riccardo;Gurioli, Massimo;Bogani, Franco;Feltin, Eric;Carlin, Jean-Francois;Butte, Raphael;Grandjean, Nicolas;Vinattieri, Anna;
12:185:11 Temperature dependence of ultrafast carrier dynamics in intrinsic and nitrogen-doped 6H-SiC crystals
DOI:10.1007/s00339-012-7084-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Li, Gaofang;Jin, Zuanming;Yue, Zhongyue;Ma, Guohong;Jiang, Kai;Hu, Zhigao;
12:185:12 Green GaInN photonic-crystal light-emitting diodes with small surface recombination effect
DOI:10.1063/1.3576927 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Kitagawa, Hitoshi;Fujita, Masayuki;Suto, Toshihide;Asano, Takashi;Noda, Susumu;
12:185:13 Critical surface phase of alpha 2(2 x 4) reconstructed zig-zag chains on InAs(001)
DOI:10.1016/j.tsf.2014.02.116 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Guo, Xiang;Zhou, Xun;Wang, Ji-Hong;Luo, Zi-Jiang;Zhou, Qing;Liu, Ke;Hu, Ming-Zhe;Ding, Zhao;
12:185:14 Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
DOI:10.1016/j.apsusc.2012.12.034 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Zhou, Qing;Luo, Zijiang;Liu, Ke;Guo, Xiang;Zhang, Bichan;Zhou, Xun;Wang, Jihong;Ding, Zhao;
12:185:15 Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures
DOI:10.1116/1.4864054 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Wang, Yu-Li;Chen, Kuan-Yu;Yang, Wei-Chen;Chiu, Shao-Yen;Cheng, Keh-Yung;
12:186:1 Structure and electrical properties of p-type twin ZnTe nanowires
DOI:10.1007/s00339-010-6242-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:11 AU: Li, Shanying;Jiang, Yang;Wu, Di;Wang, Binbin;Zhang, Yugang;Li, Junwei;Liu, Xinmei;Zhong, Honghai;Chen, Lei;Jie, Jiansheng;
12:186:2 Nanocone Tip-Film Solar Cells with Efficient Charge Transport
DOI:10.1002/adma.201101655 JN:ADVANCED MATERIALS PY:2011
TC:14 AU: Lee, Sang Hyun;Zhang, X. -G.;Parish, Chad M.;Lee, Ho Nyung;Smith, D. Barton;He, Yongning;Xu, Jun;
12:186:3 GaN-nanowire-based dye-sensitized solar cells
DOI:10.1007/s00339-010-5580-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:12 AU: Chen, X. Y.;Yip, C. T.;Fung, M. K.;Djurisic, A. B.;Chan, W. K.;
12:186:4 ZnO-ZnTe nanocone heterojunctions
DOI:10.1063/1.3430604 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Lee, Sang Hyun;Zhang, X. -G.;Smith, Barton;Seo, Sung Seok A.;Bell, Zane W.;Xu, Jun;
12:186:5 Template-guided growth of well-aligned ZnO nanocone arrays on FTO substrate
DOI:10.1016/j.jcrysgro.2012.02.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Xie, Yu;Cai, Bing;Yu, Dongqi;Shan, Wenjuan;Zhang, Wen-Hua;
12:186:6 Light confinement-induced antireflection of ZnO nanocones
DOI:10.1063/1.3651751 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Lee, Sang Hyun;Jellison, Gerald Earle, Jr.;Duty, Chad E.;Xu, Jun;
12:186:7 Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide
DOI:10.1021/nn100208v JN:ACS NANO PY:2010
TC:12 AU: Rinkio, Marcus;Johansson, Andreas;Kotimaki, Ville;Torma, Paivi;
12:186:8 Core-shell nanowire arrays of metal oxides fabricated by atomic layer deposition
DOI:10.1116/1.3660389 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:6 AU: Thomas, M. A.;Cui, J. B.;
12:186:9 Optical Resonant Cavity in a Nanotaper
DOI:10.1021/nl100100z JN:NANO LETTERS PY:2010
TC:7 AU: Lee, Sang Hyun;Goto, Takenari;Miyazaki, Hiroshi;Chang, Jiho;Yao, Takafumi;
12:186:10 Reversible electron pumping and negative differential resistance in two-step barrier diode under strong terahertz ac field
DOI:10.1063/1.3562309 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Murillo, G.;Schulz, P. A.;Arce, J. C.;
12:186:11 Nanostructured light-absorbing crystalline CuIn(1-x)GaxSe2 thin films grown through high flux, low energy ion irradiation
DOI:10.1063/1.4823987 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Hall, Allen J.;Hebert, Damon;Shah, Amish B.;Bettge, Martin;Rockett, Angus A.;
12:187:1 Growth of AlGaN and AlN on patterned AlN/sapphire templates
DOI:10.1016/j.jcrysgro.2010.06.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:20 AU: Kueller, V.;Knauer, A.;Brunner, F.;Zeimer, U.;Rodriguez, H.;Kneissl, M.;Weyers, M.;
12:187:2 High quality AlGaN grown on ELO AlN/sapphire templates
DOI:10.1016/j.jcrysgro.2013.04.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:17 AU: Zeimer, U.;Kueller, V.;Knauer, A.;Mogilatenko, A.;Weyers, M.;Kneissl, M.;
12:187:3 Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
DOI:10.1063/1.4833247 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Mehnke, Frank;Wernicke, Tim;Pingel, Harald;Kuhn, Christian;Reich, Christoph;Kueller, Viola;Knauer, Arne;Lapeyrade, Mickael;Weyers, Markus;Kneissl, Michael;
12:187:4 Efficient charge carrier injection into sub-250nm AlGaN multiple quantum well light emitting diodes
DOI:10.1063/1.4892883 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Mehnke, Frank;Kuhn, Christian;Guttmann, Martin;Reich, Christoph;Kolbe, Tim;Kueller, Viola;Knauer, Arne;Lapeyrade, Mickael;Einfeldt, Sven;Rass, Jens;Wernicke, Tim;Weyers, Markus;Kneissl, Michael;
12:187:5 Controlled coalescence of MOVPE grown AlN during lateral overgrowth
DOI:10.1016/j.jcrysgro.2013.01.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Kueller, V.;Knauer, A.;Zeimer, U.;Kneissl, M.;Weyers, M.;
12:187:6 Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowth
DOI:10.1016/j.jcrysgro.2014.06.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Mogilatenko, Anna;Kueller, Viola;Knauer, Arne;Jeschke, J.;Zeimer, Ute;Weyers, Markus;Traenkle, Guenther;
12:187:7 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
DOI:10.1063/1.4812237 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Dong, Peng;Yan, Jianchang;Wang, Junxi;Zhang, Yun;Geng, Chong;Wei, Tongbo;Cong, Peipei;Zhang, Yiyun;Zeng, Jianping;Tian, Yingdong;Sun, Lili;Yan, Qingfeng;Li, Jinmin;Fan, Shunfei;Qin, Zhixin;
12:187:8 Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)
DOI:10.1063/1.4773565 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Zhang, Yinjun;Gautier, Simon;Cho, Chu-Young;Cicek, Erdem;Vashaei, Zahra;McClintock, Ryan;Bayram, Can;Bai, Yanbo;Razeghi, M.;
12:187:9 Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy
DOI:10.1063/1.4790839 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Cicek, E.;McClintock, R.;Vashaei, Z.;Zhang, Y.;Gautier, S.;Cho, C. Y.;Razeghi, M.;
12:187:10 AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
DOI:10.1063/1.4829065 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Cicek, E.;McClintock, R.;Cho, C. Y.;Rahnema, B.;Razeghi, M.;
12:187:11 AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
DOI:10.1063/1.4828497 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Cicek, E.;McClintock, R.;Cho, C. Y.;Rahnema, B.;Razeghi, M.;
12:187:12 AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AIN template using MOVPE
DOI:10.1016/j.jcrysgro.2014.10.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yan, Jianchang;Wang, Junxi;Zhang, Yun;Cong, Peipei;Sun, Lili;Tian, Yingdong;Zhao, Chao;Li, Jinmin;
12:187:13 Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates
DOI:10.1007/s11664-013-2955-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Brendel, M.;Knigge, A.;Brunner, F.;Einfeldt, S.;Knauer, A.;Kueller, V.;Zeimer, U.;Weyers, M.;
12:187:14 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
DOI:10.1016/j.jcrysgro.2014.02.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Dong, Peng;Yan, Jianchang;Zhang, Yun;Wang, Junxi;Zeng, Jianping;Geng, Chong;Cong, Peipei;Sun, Lili;Wei, Tongbo;Zhao, Lixia;Yan, Qingfeng;He, Chenguang;Qin, Zhixin;Li, Jinmin;
12:188:1 Reconfigurable Silicon Nanowire Transistors
DOI:10.1021/nl203094h JN:NANO LETTERS PY:2012
TC:34 AU: Heinzig, Andre;Slesazeck, Stefan;Kreupl, Franz;Mikolajick, Thomas;Weber, Walter M.;
12:188:2 Transport properties of pristine and alloyed free standing ultrathin nanowires of noble metals
DOI:10.1016/j.jallcom.2014.05.210 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Kumar, Arun;Ahluwalia, P. K.;
12:188:3 Direct Probing of Schottky Barriers in Si Nanowire Schottky Barrier Field Effect Transistors
DOI:10.1103/PhysRevLett.107.216807 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:14 AU: Martin, Dominik;Heinzig, Andre;Grube, Matthias;Geelhaar, Lutz;Mikolajick, Thomas;Riechert, Henning;Weber, Walter M.;
12:188:4 Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport
DOI:10.1021/nl401826u JN:NANO LETTERS PY:2013
TC:19 AU: Heinzig, Andre;Mikolajick, Thomas;Trommer, Jens;Grimm, Daniel;Weber, Walter M.;
12:188:5 Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
DOI:10.1021/nl300930m JN:NANO LETTERS PY:2012
TC:23 AU: Mongillo, Massimo;Spathis, Panayotis;Katsaros, Georgios;Gentile, Pascal;De Franceschi, Silvano;
12:188:6 Interaction Range of P-Dopants in Si[110] Nanowires: Determining the Nondegenerate Limit
DOI:10.1021/nl502703z JN:NANO LETTERS PY:2014
TC:0 AU: Chan, Tzu-Liang;Lee, Alex J.;Mok, Alex W. K.;Chelikowsky, James R.;
12:188:7 Multimode Silicon Nanowire Transistors
DOI:10.1021/nl503476t JN:NANO LETTERS PY:2014
TC:3 AU: Glassner, Sebastian;Zeiner, Clemens;Periwal, Priyanka;Baron, Thierry;Bertagnolli, Emmerich;Lugstein, Alois;
12:188:8 Direct Measurements of Lateral Variations of Schottky Barrier Height Across "End-On" Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission Microscopy
DOI:10.1021/nl203568c JN:NANO LETTERS PY:2012
TC:3 AU: Cai, Wei;Che, Yulu;Pelz, Jonathan P.;Hemesath, Eric R.;Lauhon, Lincoln J.;
12:189:1 Shape-controlled synthesis of GaN microrods by ammonolysis route
DOI:10.1016/j.apsusc.2012.09.138 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Bao, Keyan;Liu, Wenmin;Wang, Aihua;Liu, Xiaodi;Guo, Ruiting;Wu, Yapei;
12:189:2 Deep GaN etching by inductively coupled plasma and induced surface defects
DOI:10.1116/1.3478674 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:17 AU: Ladroue, J.;Meritan, A.;Boufnichel, M.;Lefaucheux, P.;Ranson, P.;Dussart, R.;
12:189:3 Dry etching characteristics of GaN using Cl-2/BCl3 inductively coupled plasmas
DOI:10.1016/j.apsusc.2010.07.088 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Zhou, Shengjun;Cao, Bin;Liu, Sheng;
12:189:4 Fabrication of nanorod InGaN/GaN multiple self-assembled Ni nano-island masks quantum wells with
DOI:10.1016/j.apsusc.2013.08.125 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Yang, Guofeng;Guo, Ying;Zhu, Huaxin;Yan, Dawei;Li, Guohua;Gao, Shumei;Dong, Kexiu;
12:189:5 Comparative study of GaN mesa etch characteristics in Cl-2 based inductively coupled plasma with Ar and BCl3 as additive gases
DOI:10.1116/1.4868616 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Rawal, Dipendra Singh;Arora, Henika;Sehgal, Bhupender Kumar;Muralidharan, Rangarajan;
12:189:6 GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching
DOI:10.1016/j.tsf.2012.07.117 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Rawal, D. S.;Arora, Henika;Agarwal, V. R.;Vinayak, Seema;Kapoor, Ashok;Sehgal, B. K.;Muralidharan, R.;Saha, Dipankar;Malik, H. K.;
12:189:7 Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED
DOI:10.1007/s00339-011-6508-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:7 AU: Zhou, Shengjun;Cao, Bin;Liu, Sheng;
12:189:8 The influence of Ga source and substrate position on the growth of low dimensional GaN wires by chemical vapour deposition
DOI:10.1016/j.apsusc.2011.06.138 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Low, L. L.;Yam, F. K.;Beh, K. P.;Hassan, Z.;
12:189:9 In-situ photoluminescence monitoring of GaN in plasma exposure
DOI:10.1063/1.4745917 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Chen, Miao-Gen;Nakamura, Keiji;Nakano, Yoshitaka;Yu, Sen-Jiang;Sugai, Hideo;
12:189:10 Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
DOI:10.1016/j.apsusc.2010.10.048 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Qiu, Rongfu;Lu, Hai;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;
12:189:11 Growth and analysis of GaN nanowire on PZnO by different-gas flow
DOI:10.1016/j.apsusc.2012.03.084 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Shekari, L.;Abu Hassan, H.;Thahab, S. M.;Ghazai, A. J.;Hassan, Z.;
12:189:12 Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch
DOI:10.1116/1.4738848 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:1 AU: Hahn, Herwig;Gruis, Jan Berend;Ketteniss, Nico;Urbain, Felix;Kalisch, Holger;Vescan, Andrei;
12:189:13 Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(111) substrates
DOI:10.1016/j.apsusc.2010.02.086 JN:APPLIED SURFACE SCIENCE PY:2010
TC:1 AU: Shi, Feng;Wang, Zouping;Xue, Chengshan;
12:189:14 Investigation of the presence of metal droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation
DOI:10.1016/j.apsusc.2012.06.062 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Terziyska, Penka T.;Butcher, Kenneth Scott Alexander;Alexandrov, Dimiter;
12:189:15 In situ monitoring of GaN substrate surface in ICP containing energetic electrons
DOI:10.1016/j.apsusc.2013.11.149 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Huang, Xiaojiang;Guo, Ying;Zhang, Jing;Nakano, Yoshitaka;Sugai, Hideo;Nakamura, Keiji;
12:190:1 Photoelectrochemical water splitting employing a tapered silicon nanohole array
DOI:10.1039/c3ta14439a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:7 AU: Jung, Jin-Young;Choi, Mi Jin;Zhou, Keya;Li, Xiaopeng;Jee, Sang-Won;Um, Han-Don;Park, Min-Joon;Park, Kwang-Tae;Bang, Jin Ho;Lee, Jung-Ho;
12:190:2 New optical features to enhance solar cell performance based on porous silicon surfaces
DOI:10.1016/j.apsusc.2011.02.013 JN:APPLIED SURFACE SCIENCE PY:2011
TC:30 AU: Ramizy, Asmiet;Hassan, Z.;Omar, Khalid;Al-Douri, Y.;Mahdi, M. A.;
12:190:3 Optimization of porous silicon multilayer as antireflection coatings for solar cells
DOI:10.1016/j.solmat.2011.06.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:18 AU: Osorio, E.;Urteaga, R.;Acquaroli, L. N.;Garcia-Salgado, G.;Juarez, H.;Koropecki, R. R.;
12:190:4 Design and optimization of antireflecting coatings from nanostructured porous silicon dielectric multilayers
DOI:10.1016/j.solmat.2014.01.019 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Ariza-Flores, D.;Perez-Huerta, J. S.;Kumar, Yogesh;Encinas, A.;Agarwal, V.;
12:190:5 Development of rf plasma sputtered Al2O3-TiO2 multilayer broad band antireflecting coatings and its correlation with plasma parameters
DOI:10.1016/j.apsusc.2011.09.118 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Laha, P.;Panda, A. B.;Mahapatra, S. K.;Barhai, P. K.;Das, A. K.;Banerjee, I.;
12:190:6 Optimization of multilayer porous silicon antireflection coatings for silicon solar cells
DOI:10.1063/1.3353843 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Selj, J. H.;Thogersen, A.;Foss, S. E.;Marstein, E. S.;
12:190:7 Monocrystalline silicon surface passivation by Al2O3/porous silicon combined treatment
DOI:10.1016/j.mseb.2012.11.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:5 AU: Ben Rabha, M.;Salem, M.;El Khakani, M. A.;Bessais, B.;Gaidi, M.;
12:190:8 Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure
DOI:10.1016/j.tsf.2010.08.089 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Laha, Pinaki;Panda, A. B.;Dahiwale, S.;Date, K.;Patil, K. R.;Barhai, P. K.;Das, A. K.;Banerjee, I.;Mahapatra, S. K.;
12:190:9 One step sol-gel method for the formation of etch free texturing, anti-reflection coatings, and p-n junction for silicon solar cells
DOI:10.1016/j.tsf.2011.01.022 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Bae, H. J.;Kang, S. M.;Kim, T. S.;Yoon, D. H.;
12:190:10 High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
DOI:10.1016/j.apsusc.2012.07.164 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Shekari, L.;Ramizy, A.;Omar, K.;Abu Hassan, H.;Hassan, Z.;
12:190:11 Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells
DOI:10.1016/j.mseb.2011.09.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:5 AU: Montesdeoca-Santana, A.;Gonzalez-Diaz, B.;Jimenez-Rodriguez, E.;Ziegler, J.;Velazquez, J. J.;Hohage, S.;Borchert, D.;Guerrero-Lemus, R.;
12:190:12 Ellipsometric study of the influence of chemical etching on thin porous silicon structures
DOI:10.1016/j.tsf.2010.12.231 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Selj, J.;Thogersen, A.;Foss, S. E.;Marstein, E. S.;
12:191:1 Growth of AlN single crystalline boules
DOI:10.1016/j.jcrysgro.2010.04.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:40 AU: Herro, Z. G.;Zhuang, D.;Schlesser, R.;Sitar, Z.;
12:191:2 Growth of AlN Crystals on SiC Substrates by Thermal Nitridation of Al2O3
DOI:10.1111/jace.13183 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: You, Yu;Ohtsuka, Makoto;Miyake, Hideto;Fukuyama, Hiroyuki;
12:191:3 AlN bulk single crystal growth on 6H-SiC substrates by sublimation method
DOI:10.1016/j.jcrysgro.2010.05.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:17 AU: Nagai, Ichiro;Kato, Tomohisa;Miura, Tomonori;Kamata, Hiroyuki;Naoe, Kunihiro;Sanada, Kazuo;Okumura, Hajime;
12:191:4 The Influence of ZrO2 Additions on Al2O3 Evaporation and AlN Crystal Growth by Thermal Nitridation of Al2O3-ZrO2 Pellets
DOI:10.1111/jace.12545 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:1 AU: You, Yu;Kato, Mikako;Ohtsuka, Makoto;Fukuyama, Hiroyuki;
12:191:5 Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"
DOI:10.1016/j.jcrysgro.2010.04.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:10 AU: Hironaka, Keiichiro;Nagashima, Toru;Ikeda, Susumu;Azuma, Masanobu;Takada, Kazuya;Fukuyama, Hiroyuki;
12:191:6 Effects of growth direction and polarity on bulk aluminum nitride crystal properties
DOI:10.1016/j.jcrysgro.2010.10.198 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Filip, O.;Epelbaum, B. M.;Bickermann, M.;Heimann, P.;Winnacker, A.;
12:191:7 Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species
DOI:10.1016/j.jcrysgro.2012.02.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Guguschev, C.;Dittmar, A.;Moukhina, E.;Hartmann, C.;Golka, S.;Wollweber, J.;Bickermann, M.;Fornari, R.;
12:191:8 SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
DOI:10.1016/j.jcrysgro.2012.01.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Hartmann, Carsten;Albrecht, Martin;Wollweber, Juergen;Schuppang, Josephine;Juda, Uta;Guguschev, Christo;Golka, Sebastian;Dittmar, Andrea;Fornari, Roberto;
12:191:9 Crystal growth of AlN: Effect of SiC substrate
DOI:10.1016/j.mssp.2012.01.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:3 AU: Zuo, Sibin;Chen, Xiaolong;Jiang, Liangbao;Bao, Huiqiang;Wang, Jun;Guo, Liwei;Wang, Wenjun;
12:191:10 X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN
DOI:10.1063/1.4798352 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Bobea, M.;Tweedie, J.;Bryan, I.;Bryan, Z.;Rice, A.;Dalmau, R.;Xie, J.;Collazo, R.;Sitar, Z.;
12:191:11 Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates
DOI:10.1016/j.jcrysgro.2011.11.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Sumathi, R. R.;Barz, R. U.;Straubinger, T.;Gille, P.;
12:191:12 AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE
DOI:10.1016/j.jcrysgro.2011.12.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Nomura, Takuya;Okumura, Kenta;Miyake, Hideto;Hiramatsu, Kazumasa;Eryu, Osamu;Yamada, Yoichi;
12:191:13 Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)(3) precursor
DOI:10.1016/j.jcrysgro.2012.12.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: You, Yu;Ito, Akihiko;Tu, Rong;Goto, Takashi;
12:191:14 Elimination of Rotational Domain in AlN Layers Grown from Ga-Al Flux and Effects of Growth Temperature on the Layers
DOI:10.2320/matertrans.MBW201112 JN:MATERIALS TRANSACTIONS PY:2012
TC:4 AU: Adachi, Masayoshi;Sugiyama, Masashi;Tanaka, Akikazu;Fukuyama, Hiroyuki;
12:191:15 Nitridation behavior of sapphire using a carbon-saturated N-2-CO gas mixture
DOI:10.1063/1.3272692 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Fukuyama, Hiroyuki;Nakamura, Katsuhito;Aikawa, Toshiaki;Kobatake, Hidekazu;Hakomori, Akira;Takada, Kazuya;Hiraga, Kenji;
12:191:16 Possibility of AlN growth using Li-Al-N solvent
DOI:10.1016/j.jcrysgro.2010.04.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:1 AU: Kangawa, Yoshihiro;Kakimoto, Koichi;
12:191:17 Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation
DOI:10.1007/s11664-013-2968-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Zhou, Tianyi;Raghothamachar, Balaji;Wu, Fangzhen;Dalmau, Rafael;Moody, Baxter;Craft, Spalding;Schlesser, Raoul;Dudley, Michael;Sitar, Zlatko;
12:192:1 High-performance GaN/Cu2O nanowires heterojunction synthesized by physical vapor deposition
DOI:10.1016/j.matlet.2012.11.027 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Tang, XiaoBing;Zhou, ShaoMin;Yuan, XianYou;
12:192:2 Rectifying Properties of p-GaN Nanowires and an n-Silicon Heterojunction Vertical Diode
DOI:10.1021/am100712h JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:12 AU: Manna, Sujit;Ashok, Vishal D.;De, S. K.;
12:192:3 Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method
DOI:10.1016/j.materresbull.2012.07.031 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Gopalakrishnan, M.;Purushothaman, V.;Venkatesh, P. Sundara;Ramakrishnan, V.;Jeganathan, K.;
12:192:4 Low-Temperature Solution-Processed Flexible Solar Cells Based on (In,Ga)N Nanocubes
DOI:10.1021/am502217b JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Qaeed, M. A.;Ibrahim, K.;Saron, K. M. A.;Ahmed, M. A.;Allam, Nageh K.;
12:192:5 Gold catalyst effect on the morphological and structural properties of GaN nanostructures deposited by plasma enhanced chemical vapor deposition
DOI:10.1016/j.matlet.2014.01.062 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Gholampour, M.;Abdollah-zadeh, A.;Poursalehi, R.;Shekari, L.;
12:192:6 Scalable preparation and characterization of GaN nanopowders with high crystallinity by soluble salts-assisted route
DOI:10.1007/s11051-014-2619-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Lv, Yingying;Yu, Leshu;Ai, Wenwen;Li, Chungen;
12:192:7 Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires
DOI:10.1016/j.materresbull.2012.01.012 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Samanta, Chandan;Chander, D. Sathish;Ramkumar, J.;Dhamodaran, S.;
12:192:8 Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex
DOI:10.1016/j.jallcom.2010.03.068 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Ganesh, V.;Suresh, S.;Balaji, M.;Baskar, K.;
12:192:9 Structural and optical characterization of InGaN nanoparticles synthesized at low temperature
DOI:10.1016/j.matlet.2013.02.090 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Qaeed, M. A.;Ibrahim, K.;Srivastava, Ruchi;Ali, M. K. M.;Salhin, A.;
12:192:10 Synthesis and characterization of GaN nanowires by a catalyst assisted chemical vapor deposition
DOI:10.1016/j.apsusc.2011.06.110 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Wei, Xiaofeng;Shi, Feng;
12:192:11 Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles
DOI:10.1007/s11051-013-1458-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Zhuang, Nai-Feng;Wang, Xing;Fei, Fei;Liu, Chun-Chen;Wei, Lin;Zhang, Yong-Fan;Hu, Xiao-Lin;Chen, Jian-Zhong;
12:192:12 Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique
DOI:10.1016/j.matchar.2010.01.001 JN:MATERIALS CHARACTERIZATION PY:2010
TC:2 AU: Guo, Y. F.;Xue, C. S.;Liu, W. J.;Sun, H. B.;Cao, Y. P.;
12:192:13 Synthesis of GaN nanoparticles from NH4[Ga(OH)(2)CO3] under a flow of ammonia gas
DOI:10.1016/j.matlet.2010.06.055 JN:MATERIALS LETTERS PY:2010
TC:3 AU: Yan, Hongjian;Liu, Kewei;Luo, Ran;Chen, Shiguang;Cao, Hongmei;
12:192:14 Bio Focus Filamentary serpentine layout enables epidermal electronic "smart skin"
DOI:10.1557/mrs.2011.243 JN:MRS BULLETIN PY:2011
TC:1 AU: Palucka, Tim;
12:193:1 Three-Dimensional Branched Nanowire Heterostructures as Efficient Light-Extraction Layer in Light-Emitting Diodes
DOI:10.1002/adfm.201303914 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:7 AU: Ye, Byeong Uk;Kim, Buem Joon;Park, Joonmo;Jeong, Hu Young;Park, Jae Yong;Kim, Jong Kyu;Hur, Jin-Hoe;Kim, Myung Hwa;Lee, Jong-Lam;Baik, Jeong Min;
12:193:2 Design Rule of Nanostructures in Light-Emitting Diodes for Complete Elimination of Total Internal Reflection
DOI:10.1002/adma.201104648 JN:ADVANCED MATERIALS PY:2012
TC:22 AU: Son, Jun Ho;Kim, Jong Uk;Song, Yang Hee;Kim, Buem Joon;Ryu, Chul Jong;Lee, Jong-Lam;
12:193:3 Fabrication of large-scale spherical-cap structure and the application on n-GaN based light-emitting diodes
DOI:10.1116/1.4874611 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Yin, Hong-Xing;Zhu, Chuan-Rui;Shen, Yan;Yang, Hai-Fang;Liu, Zhe;Gu, Chang-Zhi;Liu, Bao-Li;Xu, Xian-Gang;
12:193:4 The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes
DOI:10.1088/0957-4484/21/2/025203 JN:NANOTECHNOLOGY PY:2010
TC:20 AU: Jang, Ho Won;Ryu, Seong Wook;Yu, Hak Ki;Lee, Sanghan;Lee, Jong-Lam;
12:193:5 Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure
DOI:10.1063/1.4865417 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Yin, Hong-Xing;Zhu, Chuan-Rui;Shen, Yan;Yang, Hai-Fang;Liu, Zhe;Gu, Chang-Zhi;Liu, Bao-Li;Xu, Xian-Gang;
12:193:6 Mapping of near field light and fabrication of complex nanopatterns by diffraction lithography
DOI:10.1088/0957-4484/23/4/045301 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Jung, Yeonwoong;Vacic, Aleksandar;Sun, Yong;Hadjimichael, Evangelos;Reed, Mark A.;
12:193:7 Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction
DOI:10.1088/0957-4484/22/30/305301 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Ai, Yujie;Huang, Ru;Hao, Zhihua;Wang, Runsheng;Liu, Changze;Fan, Chunhui;Wang, Yangyuan;
12:193:8 Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (111)
DOI:10.1016/j.apsusc.2011.05.046 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Wang, Guangxu;Xiong, Chuanbing;Liu, Junlin;Jiang, Fengyi;
12:193:9 Large-scale ordered silicon microtube arrays fabricated by Poisson spot lithography
DOI:10.1088/0957-4484/22/39/395301 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Tian, Shibing;Xia, Xiaoxiang;Sun, Wangning;Li, Wuxia;Li, Junjie;Gu, Changzhi;
12:193:10 Efficient and Directed Nano-LED Emission by a Complete Elimination of Transverse-Electric Guided Modes
DOI:10.1021/nl103243n JN:NANO LETTERS PY:2011
TC:11 AU: Kuo, Mei-Ling;Kim, Yong-Sung;Hsieh, Mei-Li;Lin, Shawn-Yu;
12:193:11 Analysis of micro-lens integrated flip-chip InGaN light-emitting diodes by confocal microscopy
DOI:10.1063/1.4863925 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, K. H.;Feng, C.;Choi, H. W.;
12:194:1 The defect character of GaN growth on r-plane sapphire
DOI:10.1063/1.3369439 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Smalc-Koziorowska, J.;Tsiakatouras, G.;Lotsari, A.;Georgakilas, A.;Dimitrakopulos, G. P.;
12:194:2 Structural anisotropy of nonpolar and semipolar InN epitaxial layers
DOI:10.1063/1.3487923 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Darakchieva, V.;Xie, M. -Y.;Franco, N.;Giuliani, F.;Nunes, B.;Alves, E.;Hsiao, C. L.;Chen, L. C.;Yamaguchi, T.;Takagi, Y.;Kawashima, K.;Nanishi, Y.;
12:194:3 Morphology and strain of self-assembled semipolar GaN quantum dots in (11(2)over-bar2) AlN
DOI:10.1063/1.3506686 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Dimitrakopulos, G. P.;Kalesaki, E.;Kioseoglou, J.;Kehagias, Th.;Lotsari, A.;Lahourcade, L.;Monroy, E.;Haeusler, I.;Kirmse, H.;Neumann, W.;Jurczak, G.;Young, T. D.;Dluzewski, P.;Komninou, Ph.;Karakostas, Th.;
12:194:4 Crystal Orientation Variation of Nonpolar AlN Films with III/V Ratio on r-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy
DOI:10.1007/s13391-014-4114-6 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Duc Duy Le;Kim, Dong Yeob;Hong, Soon-Ku;
12:194:5 Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates
DOI:10.1063/1.3475521 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Chandrasekaran, R.;Moustakas, T. D.;Ozcan, A. S.;Ludwig, K. F.;Zhou, L.;Smith, David J.;
12:194:6 Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects
DOI:10.1063/1.3680876 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Kioseoglou, J.;Lotsari, A.;Kalesaki, E.;Dimitrakopulos, G. P.;
12:194:7 MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
DOI:10.1016/j.jcrysgro.2011.01.105 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Zhang, Biao;Song, Huaping;Wang, Jun;Jia, Caihong;Liu, Jianming;Xu, Xiaoqing;Liu, Xianglin;Yang, Shaoyan;Zhu, Qinsheng;Wang, Zhanguo;
12:194:8 Growth of GaN films with controlled out-of-plane texture on Si wafers
DOI:10.1016/j.tsf.2011.01.281 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Hong, Jung-Il;Chang, Yanling;Ding, Yong;Wang, Zhong Lin;Snyder, Robert L.;
12:194:9 Epitaxial relationship of semipolar s-plane (1(1)over-bar01) InN grown on r-plane sapphire
DOI:10.1063/1.4731788 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Dimitrakopulos, G. P.;
12:194:10 m-plane, (10(1)under-bar0). InN heteroepitaxied on (100)-gamma-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy
DOI:10.1063/1.3359680 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Hsiao, Ching-Lien;Chen, Jr-Tai;Hsu, Hsu-Cheng;Liao, Ying-Chieh;Tseng, Po-Han;Chen, Yen-Ting;Feng, Zhe Chuan;Tu, Li-Wei;Chou, Mitch M. C.;Chen, Li-Chyong;Chen, Kuei-Hsien;
12:194:11 Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire
DOI:10.1063/1.3284086 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Ajagunna, A. O.;Iliopoulos, E.;Tsiakatouras, G.;Tsagaraki, K.;Androulidaki, M.;Georgakilas, A.;
12:194:12 Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2011.04.203 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Chung, Yee Ling;Peng, Xingyu;Liao, Ying Chieh;Yao, Shude;Chen, Li Chyong;Chen, Kuei Hsien;Feng, Zhe Chuan;
12:194:13 Influence of structural anisotropy to anisotropic electron mobility in a-plane InN
DOI:10.1063/1.4792209 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Ahn, H.;Chia, J. -W.;Lee, H. -M.;Gwo, S.;
12:194:14 Finite element modelling of semi and nonpolar GaN/AlN quantum dots
DOI:10.1016/j.apsusc.2012.04.005 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Jurczak, Grzegorz;Young, Toby D.;
12:194:15 Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition
DOI:10.1063/1.3530581 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Norman, D. P.;Tu, L. W.;Chiang, S. Y.;Tseng, P. H.;Wadekar, P.;Hamad, S.;Seo, H. W.;
12:195:1 Optical waveguiding properties into porous gallium nitride structures investigated by prism coupling technique
DOI:10.1063/1.4892528 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Alshehri, Bandar;Lee, Seung-Min;Kang, Jin-Ho;Gong, Su-Hyun;Ryu, Sang-Wan;Cho, Yong-Hoon;Dogheche, Elhadj;
12:195:2 Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
DOI:10.1063/1.3582055 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Stolz, A.;Cho, E.;Dogheche, E.;Androussi, Y.;Troadec, D.;Pavlidis, D.;Decoster, D.;
12:195:3 Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate
DOI:10.1063/1.4776671 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Stolz, Arnaud;Ko, Suk-Min;Patriarche, Gilles;Dogheche, Elhadj;Cho, Yong-Hoon;Decoster, Didier;
12:195:4 Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition
DOI:10.1063/1.4868427 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Cuniot-Ponsard, M.;Saraswati, I.;Ko, S. -M.;Halbwax, M.;Cho, Y. H.;Dogheche, E.;
12:195:5 Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range
DOI:10.1063/1.4873236 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Soltani, A.;Stolz, A.;Charrier, J.;Mattalah, M.;Gerbedoen, J. -C.;Barkad, H. A.;Mortet, V.;Rousseau, M.;Bourzgui, N.;BenMoussa, A.;De Jaeger, J. -C.;
12:195:6 Nanoporous InGaN of high In composition prepared by KOH electrochemical etching
DOI:10.1016/j.mssp.2013.07.035 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Radzali, R.;Zainal, N.;Yam, F. K.;Hassan, Z.;
12:195:7 Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy
DOI:10.1016/j.tsf.2013.01.086 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Stolz, A.;Soltani, A.;Abdallah, B.;Charrier, J.;Deresmes, D.;Jouan, P. -Y.;Djouadi, M. A.;Dogheche, E.;De Jaeger, J. -C.;
12:195:8 Second harmonic generation in phase matched aluminum nitride waveguides and micro-ring resonators
DOI:10.1063/1.4722941 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Pernice, W. H. P.;Xiong, C.;Schuck, C.;Tang, H. X.;
12:195:9 Simultaneous characterization of the electro-optic, converse-piezoelectric, and electroabsorptive effects in epitaxial (Sr, Ba)Nb2O6 thin films
DOI:10.1063/1.3514083 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Cuniot-Ponsard, M.;Desvignes, J. M.;Bellemain, A.;Bridou, F.;
12:195:10 Optical characterization of nanoporous GaN by spectroscopic ellipsometry
DOI:10.1016/j.tsf.2012.10.077 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Lee, Jeong-Hae;Lee, Baro;Kang, Jin-Ho;Lee, June Key;Ryu, Sang-Wan;
12:195:11 Enhanced photocurrent and persistent photoconductivity in nanoporous GaN formed by electrochemical etching
DOI:10.1016/j.tsf.2013.05.108 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Lee, Yoon-Han;Kang, Jin-Ho;Ryu, Sang-Wan;
12:195:12 GaN directional couplers for integrated quantum photonics
DOI:10.1063/1.3656073 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Zhang, Yanfeng;McKnight, Loyd;Engin, Erman;Watson, Ian M.;Cryan, Martin J.;Gu, Erdan;Thompson, Mark G.;Calvez, Stephane;O'Brien, Jeremy L.;Dawson, Martin D.;
12:195:13 Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
DOI:10.1016/j.mssp.2011.01.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Wei, Meng;Wang, Xiaoliang;Pan, Xu;Xiao, Hongling;Wang, CuiMei;Hou, Qifeng;Wang, Zhanguo;
12:195:14 Design and fabrication of subwavelength nanogratings based light-emitting diodes
DOI:10.1007/s00339-011-6295-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Zhang, Liang;Teng, Jinghua;Chua, Soo Jin;Fitzgerald, Eugene A.;
12:195:15 High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
DOI:10.1063/1.4882415 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Soltani, A.;Rousseau, M.;Gerbedoen, J. -C.;Mattalah, M.;Bonanno, P. L.;Telia, A.;Bourzgui, N.;Patriarche, G.;Ougazzaden, A.;BenMoussa, A.;
12:195:16 Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers
DOI:10.1016/j.jcrysgro.2010.10.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Zhang, X. G.;Soderman, B.;Armour, E.;Paranjpe, A.;
12:196:1 Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering
DOI:10.1063/1.4828873 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Schiaber, Ziani S.;Leite, Douglas M. G.;Bortoleto, Jose R. R.;Lisboa-Filho, Paulo N.;da Silva, Jose H. D.;
12:196:2 Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)
DOI:10.1016/j.tsf.2012.02.004 JN:THIN SOLID FILMS PY:2012
TC:11 AU: Neumann, L.;Gerlach, J. W.;Rauschenbach, B.;
12:196:3 MD simulations of GaN sputtering by Ar+ ions: Ion-induced damage and near-surface modification under continuous bombardment
DOI:10.1116/1.3460904 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:7 AU: Despiau-Pujo, Emilie;Chabert, Pascal;
12:196:4 High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures
DOI:10.1016/j.apsusc.2014.09.006 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Finzel, A.;Gerlach, J. W.;Lorbeer, J.;Frost, F.;Rauschenbach, B.;
12:196:5 Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
DOI:10.1063/1.3309840 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Jindal, Vibhu;Shahedipour-Sandvik, Fatemeh;
12:196:6 Effect of defects on strain state in nonpolar a-plane GaN
DOI:10.1016/j.jcrysgro.2012.01.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Liu, Z. Y.;Xu, S. R.;Zhang, J. C.;Xue, J. S.;Xue, X. Y.;Niu, M. T.;Hao, Y.;
12:196:7 Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets
DOI:10.1063/1.4728166 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Gerlach, J. W.;Ivanov, T.;Neumann, L.;Hoeche, Th.;Hirsch, D.;Rauschenbach, B.;
12:196:8 Structural characterization of cubic and hexagonal GaN thin films grown by IBA-MBE on SiC/Si
DOI:10.1016/j.jcrysgro.2009.12.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Haeberlen, M.;Gerlach, J. W.;Murphy, B.;Lindner, J. K. N.;Stritzker, B.;
12:196:9 Low energy Ar+ bombardment of GaN surfaces: A statistical study of ion reflection and sputtering
DOI:10.1116/1.3480344 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:2 AU: Despiau-Pujo, Emilie;Chabert, Pascal;
12:196:10 Simulations of radical and ion fluxes on a wafer in a Cl-2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
DOI:10.1116/1.3437492 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:5 AU: Despiau-Pujo, Emilie;Chabert, Pascal;Bansropun, Shailendra;Thenot, Didier;Plouhinec, Patrick;Cassette, Simone;
12:196:11 Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum
DOI:10.1016/j.apsusc.2010.03.001 JN:APPLIED SURFACE SCIENCE PY:2010
TC:14 AU: Hattori, Azusa N.;Endo, Katsuyoshi;Hattori, Ken;Daimon, Hiroshi;
12:196:12 Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers
DOI:10.1016/j.jcrysgro.2011.06.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Xu, S. R.;Zhang, J. C.;Yang, L. A.;Zhou, X. W.;Cao, Y. R.;Zhang, J. F.;Xue, J. S.;Liu, Z. Y.;Ma, J. C.;Bao, F.;Hao, Y.;
12:197:1 High quality InAs and GaSb thin layers grown on Si (111)
DOI:10.1016/j.jcrysgro.2011.03.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:20 AU: Ghalamestani, Sepideh Gorji;Berg, Martin;Dick, Kimberly A.;Wernersson, Lars-Erik;
12:197:2 Doping Incorporation in InAs nanowires characterized by capacitance measurements
DOI:10.1063/1.3475356 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:25 AU: Astromskas, Gvidas;Storm, Kristian;Karlstrom, Olov;Caroff, Philippe;Borgstrom, Magnus;Wernersson, Lars-Erik;
12:197:3 Uniform and position-controlled InAs nanowires on 2 '' Si substrates for transistor applications
DOI:10.1088/0957-4484/23/1/015302 JN:NANOTECHNOLOGY PY:2012
TC:11 AU: Ghalamestani, Sepideh Gorji;Johansson, Sofia;Borg, B. Mattias;Lind, Erik;Dick, Kimberly A.;Wernersson, Lars-Erik;
12:197:4 Transient studies on InAs/HfO2 nanowire capacitors
DOI:10.1063/1.3533379 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Astromskas, Gvidas;Storm, Kristian;Wernersson, Lars-Erik;
12:197:5 InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers
DOI:10.1088/0957-4484/25/48/485203 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Berg, Martin;Persson, Karl-Magnus;Wu, Jun;Lind, Erik;Sjoland, Henrik;Wernersson, Lars-Erik;
12:197:6 Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4813850 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Persson, K. -M.;Malm, B. G.;Wernersson, L. -E.;
12:197:7 Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
DOI:10.1116/1.4895112 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Memisevic, Elvedin;Lind, Erik;Wernersson, Lars-Erik;
12:197:8 From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
DOI:10.1016/j.jcrysgro.2012.09.059 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Sladek, Kamil;Haas, Fabian;Heidelmann, Markus;Park, Daesung;Barthel, Juri;Dorn, Falk;Weirich, Thomas E.;Gruetzmacher, Detlev;Hardtdegen, Hilde;
12:197:9 Self-assembled nanowire array capacitors: capacitance and interface state profile
DOI:10.1088/0957-4484/25/13/135201 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Li, Qiliang;Xiong, Hao D.;Liang, Xuelei;Zhu, Xiaoxiao;Gu, Diefeng;Ioannou, Dimitris E.;Baumgart, Helmut;Richter, Curt A.;
12:198:1 Pressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study
DOI:10.1103/PhysRevB.82.035201 JN:PHYSICAL REVIEW B PY:2010
TC:26 AU: Sarasamak, Kanoknan;Limpijumnong, Sukit;Lambrecht, Walter R. L.;
12:198:2 Ab initio study of InxGa1-xN-Performance of the alchemical mixing approximation
DOI:10.1016/j.commatsci.2013.08.047 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:4 AU: Scharoch, P.;Winiarski, M. J.;Polak, M. P.;
12:198:3 Oxidation of GaN: An ab initio thermodynamic approach
DOI:10.1103/PhysRevB.88.165201 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Jackson, Adam J.;Walsh, Aron;
12:198:4 Anomalous band-gap bowing of AlN1-xPx alloy
DOI:10.1016/j.jallcom.2013.03.269 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Winiarski, M. J.;Polak, M.;Scharoch, P.;
12:198:5 Computational study of the structural phases of ZnO
DOI:10.1103/PhysRevB.84.094110 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Molepo, Mahlaga P.;Joubert, Daniel P.;
12:198:6 Band gap calculations of the semiconductor BNxP1-x using modified Becke-Johnson approximation
DOI:10.1016/j.jallcom.2012.08.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Benkraouda, M.;Amrane, N.;
12:198:7 Ab-initio calculations of electronic, transport, and structural properties of boron phosphide
DOI:10.1063/1.4894692 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Ejembi, J. I.;Nwigboji, I. H.;Franklin, L.;Malozovsky, Y.;Zhao, G. L.;Bagayoko, D.;
12:198:8 Prediction study of the elastic and thermodynamic properties of the SnMg2O4, SnZn2O4 and SnCd2O4 spinel oxides
DOI:10.1016/j.commatsci.2012.03.044 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:3 AU: Allali, D.;Bouhemadou, A.;Zerarga, F.;Ghebouli, M. A.;Bin-Omran, S.;
12:198:9 Maximum spectral luminous efficacy of white light
DOI:10.1063/1.4721897 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Murphy, Thomas W., Jr.;
12:198:10 Elastic and thermodynamic properties of ZnSc2S4 and CdSc2S4 compounds under pressure and temperature effects
DOI:10.1016/j.commatsci.2013.01.004 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:1 AU: Bouhemadou, A.;Ugur, G.;Ugur, S.;Al-Essa, S.;Ghebouli, M. A.;Khenata, R.;Bin-Omran, S.;Al-Douri, Y.;
12:198:11 A first principle study of pressure-induced effects on phase transitions, band structures and elasticity of zinc oxide
DOI:10.1016/j.mssp.2014.02.029 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Kuang, Fang-Guang;Kuang, Xiao-Yu;Kang, Shu-Ying;Zhong, Ming-Min;Mao, Ai-Jie;
12:198:12 Sound velocities and elastic properties of PbTiO3 and PbZrO3 under pressure: First principles study
DOI:10.1016/j.ceramint.2012.10.077 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Pandech, Narasak;Sarasamak, Kanoknan;Limpijumnong, Sukit;
12:199:1 Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods
DOI:10.1016/j.jallcom.2010.05.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Zhang, Lei;Shao, Yongliang;Wu, Yongzhong;Hao, Xiaopeng;Chen, Xiufang;Qu, Shuang;Xu, Xiangang;
12:199:2 Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy
DOI:10.1016/j.jallcom.2011.02.168 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Shao, Yongliang;Zhang, Lei;Hao, Xiaopeng;Wu, Yongzhong;Chen, Xiufang;Qu, Shuang;Xu, Xiangang;Jiang, Minhua;
12:199:3 An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
DOI:10.1016/j.jallcom.2009.09.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Zhao, D. G.;Jiang, D. S.;Zhu, J. J.;Wang, H.;Liu, Z. S.;Zhang, S. M.;Wang, Y. T.;Jia, Q. J.;Yang, Hui;
12:199:4 Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE
DOI:10.1016/j.jallcom.2010.04.185 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: Qu, Shuang;Li, Shuqiang;Peng, Yan;Zhu, Xueliang;Hu, Xiaobo;Wang, Chengxin;Chen, Xiufang;Gao, Yuqiang;Xu, Xiangang;
12:199:5 Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE
DOI:10.1016/j.jallcom.2010.12.150 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:0 AU: Qu, Shuang;Wang, Chengxin;Li, Shuqiang;Xu, Xiangang;Shao, Huihui;Peng, Yan;Gao, Yuqiang;Chen, Xiufang;Hu, Xiaobo;
12:199:6 Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes
DOI:10.1063/1.3580510 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Lu, H. M.;Chen, G. X.;
12:199:7 Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures
DOI:10.1016/j.jcrysgro.2010.02.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Chelda-Gourmala, O.;Trassoudaine, A.;Andre, Y.;Bouchoule, S.;Gil, E.;Tourret, J.;Castelluci, D.;Cadoret, R.;
12:199:8 Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates
DOI:10.1016/j.actamat.2009.12.002 JN:ACTA MATERIALIA PY:2010
TC:12 AU: Reitmeier, Z. J.;Einfeldt, S.;Davis, R. F.;Zhang, Xinyu;Fang, Xialong;Mahajan, S.;
12:199:9 Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy
DOI:10.1016/j.jcrysgro.2012.12.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Frajtag, P.;Nepal, N.;Paskova, T.;Bedair, S. M.;El-Masry, N. A.;
12:199:10 Semipolar {n(n)over-bar01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique
DOI:10.1063/1.4704779 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Funato, Mitsuru;Kotani, Teruhisa;Kondou, Takeshi;Kawakami, Yoichi;
12:199:11 The effects of surface treatments of the substrates on high-quality GaN crystal growth
DOI:10.1016/j.jcrysgro.2013.03.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Fujimori, Taku;Maruyama, Mihoko;Honjo, Masatomo;Takazawa, Hideo;Murakami, Kosuke;Imabayashi, Hiroki;Todoroki, Yuma;Matsuo, Daisuke;Imade, Mamoru;Yoshimura, Masashi;Mori, Yusuke;
12:199:12 Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
DOI:10.1016/j.jallcom.2010.09.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Deng, Y.;Zhao, D. G.;Le, L. C.;Jiang, D. S.;Wu, L. L.;Zhu, J. J.;Wang, H.;Liu, Z. S.;Zhang, S. M.;Yang, Hui;Liang, J. W.;
12:199:13 Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth
DOI:10.1016/j.jcrysgro.2011.08.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Zhang, Lei;Shao, Yongliang;Hao, Xiaopeng;Wu, Yongzhong;Qu, Shuang;Chen, Xiufang;Xu, Xiangang;
12:199:14 Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth
DOI:10.1016/j.jcrysgro.2015.07.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Imanishi, Masayuki;Todoroki, Yuma;Murakami, Kosuke;Matsuo, Daisuke;Imabayashi, Hiroki;Takazawa, Hideo;Maruyama, Mihoko;Imade, Mamoru;Yoshimura, Masashi;Mori, Yusuke;
12:200:1 Dielectric function and optical properties of quaternary AIInGaN alloys
DOI:10.1063/1.3603015 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Sakalauskas, E.;Reuters, B.;Khoshroo, L. Rahimzadeh;Kalisch, H.;Heuken, M.;Vescan, A.;Roeppischer, M.;Cobet, C.;Gobsch, G.;Goldhahn, R.;
12:200:2 Microstructure of striae in < 0(4)over-bar41 >-oriented lithium niobate single crystal grown by Czochralski method
DOI:10.1016/j.jcrysgro.2013.12.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Ohno, Y.;Taishi, T.;Bamba, N.;Yonenaga, I.;
12:200:3 Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
DOI:10.1007/s11664-013-2473-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:9 AU: Reuters, Benjamin;Wille, A.;Ketteniss, N.;Hahn, H.;Hollaender, B.;Heuken, M.;Kalisch, H.;Vescan, A.;
12:200:4 Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy
DOI:10.1063/1.4764342 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Reuters, Benjamin;Finken, M.;Wille, A.;Hollaender, B.;Heuken, M.;Kalisch, H.;Vescan, A.;
12:200:5 Growth Studies on Quaternary AlInGaN Layers for HEMT Application
DOI:10.1007/s11664-012-1989-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:8 AU: Reuters, Benjamin;Wille, A.;Hollaender, B.;Sakalauskas, E.;Ketteniss, N.;Mauder, C.;Goldhahn, R.;Heuken, M.;Kalisch, H.;Vescan, A.;
12:200:6 Composition dependence of elastic constants in wurtzite AlGaInN alloys
DOI:10.1063/1.3678002 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Lopuszynski, M.;Majewski, J. A.;
12:200:7 Electroluminescence observation of nanoscale phase separation in quaternary AlInGaN light-emitting diodes
DOI:10.1063/1.3397987 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Cao, X. A.;Yang, Y.;
12:200:8 Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition
DOI:10.1063/1.4901834 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Laurent, Matthew A.;Gupta, Geetak;Wienecke, Steven;Muqtadir, Azim A.;Keller, Stacia;DenBaars, Steven P.;Mishra, Umesh K.;
12:200:9 Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys
DOI:10.1016/j.jallcom.2013.10.139 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Hu, S. Y.;Lee, Y. C.;Weng, Y. H.;Ferguson, I. T.;Feng, Z. C.;
12:200:10 Anomalous luminescence behavior in the InAlGaN thin film
DOI:10.1016/j.jallcom.2010.10.205 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Hu, Sheng-Yao;Lee, Yueh-Chien;Feng, Zhe-Chuan;Yang, Shi-Hong;
12:200:11 Raman spectra investigation of InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition
DOI:10.1063/1.4752420 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Hu, S. Y.;Lee, Y. C.;Feng, Z. C.;Weng, Y. H.;
12:201:1 Interfacial effects on the optical behavior of Ge:ITO and Ge:ZnO nanocomposite films
DOI:10.1088/0957-4484/23/7/075203 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Shih, Grace H.;Allen, Cary G.;Potter, B. G., Jr.;
12:201:2 Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films
DOI:10.1063/1.3679081 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Potter, B. G., Jr.;Beal, R. J.;Allen, C. G.;
12:201:3 Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface
DOI:10.1063/1.4890235 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Horsley, K.;Beal, R. J.;Wilks, R. G.;Blum, M.;Haeming, M.;Hanks, D. A.;Weir, M. G.;Hofmann, T.;Weinhardt, L.;Baer, M.;Potter, B. G., Jr.;Heske, C.;
12:201:4 Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films
DOI:10.1063/1.4736862 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Beal, R. J.;Kana, J. B. Kana;Potter, B. G., Jr.;
12:201:5 Microstructural and optical characterization of germanium:indium tin oxide (Ge:ITO) nanocomposite films
DOI:10.1016/j.mseb.2010.07.018 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Allen, C. G.;Shih, G. H.;Potter, B. G., Jr.;
12:201:6 RF-sputtered Ge-ITO nanocomposite thin films for photovoltaic applications
DOI:10.1016/j.solmat.2009.12.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:10 AU: Shih, G. H.;Allen, C. G.;Potter, B. G., Jr.;
12:201:7 Raman-active wurtzite CdO nanophase and phonon signatures in CdO/ZnO heterostructures fabricated by nonequilibrium laser plasma ablation and stress control
DOI:10.1063/1.3573795 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Ashrafi, Almamun;Ostrikov, Kostya (Ken);
12:202:1 Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles
DOI:10.1016/j.matlet.2011.08.019 JN:MATERIALS LETTERS PY:2011
TC:20 AU: Wu, Jiang;Lee, Seungyong;Reddy, V. R.;Manasreh, M. O.;Weaver, B. D.;Yakes, M. K.;Furrow, C. S.;Kunets, Vas. P.;Benamara, M.;Salamo, G. J.;
12:202:2 Surface plasmon enhanced UV emission in AlGaN/GaN quantum well
DOI:10.1063/1.3515419 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Lin, J.;Mohammadizia, A.;Neogi, A.;Morkoc, H.;Ohtsu, M.;
12:202:3 Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode
DOI:10.1063/1.4792508 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Wang, C.;Qu, H. J.;Chen, W. X.;Ran, G. Z.;Yu, H. Y.;Niu, B.;Pan, J. Q.;Wang, W.;
12:202:4 Mie scattering enhanced near-infrared light response of thin-film silicon solar cells
DOI:10.1063/1.3478465 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Nunomura, S.;Minowa, A.;Sai, H.;Kondo, M.;
12:202:5 Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells
DOI:10.1103/PhysRevB.87.201304 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Llopis, A.;Lin, J.;Pereira, S. M. S.;Trinidade, T.;Martins, M. A.;Watson, I. M.;Krokhin, A. A.;Neogi, A.;
12:202:6 Exciton decay through plasmon modes in planar metal-semiconductor structures
DOI:10.1103/PhysRevB.87.195429 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Durnev, M. V.;Kavokin, A. V.;Gil, B.;
12:202:7 Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells
DOI:10.1063/1.3640492 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Gryczynski, Karol G.;Vemuri, Padma Rekha;Watson, Ian;Neogi, Arup;
12:202:8 Enhanced light absorption in thin film solar cells with embedded dielectric nanoparticles: Induced texture dominates Mie scattering
DOI:10.1063/1.4802718 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Nagel, James R.;Scarpulla, Michael A.;
12:202:9 Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells
DOI:10.1063/1.4884075 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Jie;Llopis, Antonio;Krokhin, Arkadii;Pereira, Sergio;Watson, Ian M.;Neogi, Arup;
12:202:10 Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices
DOI:10.1063/1.3525161 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Ran, G. Z.;Jiang, D. F.;Kan, Q.;Chen, H. D.;
12:202:11 Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells (vol 87, 201304, 2013)
DOI:10.1103/PhysRevB.87.239902 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Llopis, A.;Lin, J.;Pereira, S. M. S.;Trindade, T.;Martins, M. A.;Watson, I. M.;Krokhin, A. A.;Neogi, A.;
12:203:1 Band gap control of small bundles of carbon nanotubes using applied electric fields: A density functional theory study
DOI:10.1063/1.3478237 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Kim, Gunn;Bernholc, J.;Kwon, Young-Kyun;
12:203:2 Tunable electronic properties of ZnO nanowires and nanotubes under a transverse electric field
DOI:10.1063/1.4775767 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Wang, Yanzong;Wang, Baolin;Zhang, Qinfang;Shi, Daning;Yunoki, Seiji;Kong, Fanjie;Xu, Ning;
12:203:3 Tunable deformation and electronic properties of single-walled ZnO nanotubes under a transverse electric field
DOI:10.1063/1.3699311 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Wang, Yanzong;Wang, Baolin;Zhang, Qinfang;Zhao, Jijun;Shi, Daning;Yunoki, Seiji;Kong, Fanjie;Xu, Ning;
12:203:4 Engineering the band gap of SiC nanotubes with a transverse electric field
DOI:10.1063/1.3469944 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Alfieri, G.;Kimoto, T.;
12:203:5 Tunable electronic properties of silicon nanowires under strain and electric bias
DOI:10.1063/1.4890674 JN:AIP ADVANCES PY:2014
TC:1 AU: Nduwimana, Alexis;Wang, Xiao-Qian;
12:203:6 Tunable optical and electronic properties of Si nanowires by electric bias
DOI:10.1063/1.3576100 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Zhang, R. Q.;Gao, N.;Lian, J. S.;Jiang, Q.;
12:203:7 Can carbon nanotube fibers achieve the ultimate conductivity?-Coupled-mode analysis for electron transport through the carbon nanotube contact
DOI:10.1063/1.4818308 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Xu, Fangbo;Sadrzadeh, Arta;Xu, Zhiping;Yakobson, Boris I.;
12:203:8 The effect of molecular mobility on electronic transport in carbon nanotube-polymer composites and networks
DOI:10.1063/1.4904759 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shenogin, Sergei;Lee, Jonghoon;Voevodin, Andrey A.;Roy, Ajit K.;
12:203:9 Silicon Carbide Nanocages and Nanotubes: Analogs of Carbon Fullerenes and Nanotubes or Not?
DOI:10.1166/jctn.2012.2605 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:0 AU: Zhao, Mingwen;Xia, Yueyuan;Mei, Liangmo;
12:203:10 Aligned semiconducting single-walled carbon nanotubes: Semi-analytical solution
DOI:10.1063/1.4821272 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Elkadi, Asmaa;Decrossas, Emmanuel;Yu, Shui-Q.;Naseem, Hameed A.;El-Ghazaly, Samir M.;
12:203:11 The Effect of External Field on the Electronic Properties of Silicon Nanodots
DOI:10.1007/s13391-012-2043-9 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:4 AU: Gong, P. L.;Li, H.;
12:204:1 Impact of trap localization on low-frequency noise in nanoscale device
DOI:10.1063/1.4878456 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Lee, Jae Woo;Yun, Wan Soo;Ghibaudo, Gerard;
12:204:2 Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
DOI:10.1063/1.3480424 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Jang, Doyoung;Lee, Jae Woo;Tachi, Kiichi;Montes, Laurent;Ernst, Thomas;Kim, Gyu Tae;Ghibaudo, Gerard;
12:204:3 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
DOI:10.1063/1.4793306 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lee, Jae Woo;Cho, Moon Ju;Simoen, Eddy;Ritzenthaler, Romain;Togo, Mitsuhiro;Boccardi, Guillaume;Mitard, Jerome;Ragnarsson, Lars-Ake;Chiarella, Thomas;Veloso, Anabela;Horiguchi, Naoto;Thean, Aaron;Groeseneken, Guido;
12:204:4 Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor
DOI:10.1021/am403270m JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Lee, Jae Woo;Simoen, Eddy;Veloso, Anabela;Cho, Moon Ju;Boccardi, Guillaume;Ragnarsson, Lars-Ake;Chiarella, Thomas;Horiguchi, Naoto;Groeseneken, Guido;Thean, Aaron;
12:204:5 Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement
DOI:10.1063/1.4756910 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Lee, Jae Woo;Jang, Doyoung;Mouis, Mireille;Tachi, Kiichi;Kim, Gyu Tae;Ernst, Thomas;Ghibaudo, Gerard;
12:204:6 Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors
DOI:10.1063/1.3294961 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Lee, Jae Woo;Jang, Doyoung;Kim, Gyu Tae;Mouis, Mireille;Ghibaudo, Gerard;
12:204:7 Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors
DOI:10.1063/1.4825221 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Joo, Min-Kyu;Mouis, Mireille;Jeon, Dae-Young;Kim, Gyu-Tae;Kim, Un Jeong;Ghibaudo, Gerard;
12:204:8 Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires
DOI:10.1088/0957-4484/22/7/075206 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Motayed, Abhishek;Bonevich, John E.;Krylyuk, Sergiy;Davydov, Albert V.;Aluri, Geetha;Rao, Mulpuri V.;
12:204:9 Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy
DOI:10.1063/1.3637049 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Motayed, Abhishek;Krylyuk, Sergiy;Davydov, Albert V.;
12:204:10 Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors
DOI:10.1063/1.4809755 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lee, Jae Woo;Sasaki, Yuichiro;Cho, Moon Ju;Togo, Mitsuhiro;Boccardi, Guillaume;Ritzenthaler, Romain;Eneman, Geert;Chiarella, Thomas;Brus, Stephan;Horiguchi, Naoto;Groeseneken, Guido;Thean, Aaron;
12:204:11 DC modeling and the source of flicker noise in passivated carbon nanotube transistors
DOI:10.1088/0957-4484/21/38/385203 JN:NANOTECHNOLOGY PY:2010
TC:7 AU: Kim, Sunkook;Kim, Seongmin;Janes, David B.;Mohammadi, Saeed;Back, Juhee;Shim, Moonsub;
12:205:1 Quasiparticle band structure of Zn-IV-N-2 compounds
DOI:10.1103/PhysRevB.84.165204 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Punya, Atchara;Lambrecht, Walter R. L.;van Schilfgaarde, Mark;
12:205:2 Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
DOI:10.1002/adma.201204718 JN:ADVANCED MATERIALS PY:2013
TC:14 AU: Lahourcade, Lise;Coronel, Naomi C.;Delaney, Kris T.;Shukla, Sujeet K.;Spaldin, Nicola A.;Atwater, Harry A.;
12:205:3 Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights
DOI:10.1002/adma.201302727 JN:ADVANCED MATERIALS PY:2014
TC:2 AU: Chen, Shiyou;Narang, Prineha;Atwater, Harry A.;Wang, Lin-Wang;
12:205:4 Growth, disorder, and physical properties of ZnSnN2
DOI:10.1063/1.4816438 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Feldberg, N.;Aldous, J. D.;Linhart, W. M.;Phillips, L. J.;Durose, K.;Stampe, P. A.;Kennedy, R. J.;Scanlon, D. O.;Vardar, G.;Field, R. L., III;Jen, T. Y.;Goldman, R. S.;Veal, T. D.;Durbin, S. M.;
12:205:5 Band offsets between ZnGeN2, GaN, ZnO, and ZnSnN2 and their potential impact for solar cells
DOI:10.1103/PhysRevB.88.075302 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Punya, Atchara;Lambrecht, Walter R. L.;
12:205:6 Bandgap Tunability in Zn(Sn,Ge)N-2 Semiconductor Alloys
DOI:10.1002/adma.201304473 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Narang, Prineha;Chen, Shiyou;Coronel, Naomi C.;Gul, Sheraz;Yano, Junko;Wang, Lin-Wang;Lewis, Nathan S.;Atwater, Harry A.;
12:205:7 Band gap and electronic structure of MgSiN2
DOI:10.1063/1.4896134 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Quirk, J. B.;Rasander, M.;McGilvery, C. M.;Palgrave, R.;Moram, M. A.;
12:205:8 Natural charge spatial separation and quantum confinement of ZnO/GaN-core/shell nanowires
DOI:10.1063/1.3504225 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Wang, Zhenhai;Fan, Yingcai;Zhao, Mingwen;
12:205:9 Growth of ZnSnN2 by Molecular Beam Epitaxy
DOI:10.1007/s11664-013-2962-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:3 AU: Feldberg, N.;Aldous, J. D.;Stampe, P. A.;Kennedy, R. J.;Veal, T. D.;Durbin, S. M.;
12:206:1 Evolution of phase separation in In-rich InGaN alloys
DOI:10.1063/1.3453563 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Pantha, B. N.;Li, J.;Lin, J. Y.;Jiang, H. X.;
12:206:2 Origin of background electron concentration in InxGa1-xN alloys
DOI:10.1103/PhysRevB.84.075327 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Pantha, B. N.;Wang, H.;Khan, N.;Lin, J. Y.;Jiang, H. X.;
12:206:3 Luminescence studies in InxGa1-xN epitaxial layers with different indium contents
DOI:10.1016/j.optmat.2013.03.024 JN:OPTICAL MATERIALS PY:2013
TC:0 AU: Wu, T. Y.;Chang, C. C.;Tiong, K. K.;Lee, Y. C.;Hu, S. Y.;Lin, L. Y.;Lin, T. Y.;Feng, Z. C.;
12:206:4 Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2013.07.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Fu, S. F.;Chen, C. Y.;Li, F. W.;Hsu, C. H.;Chou, W. C.;Chang, W. H.;Chen, W. K.;Ke, W. C.;
12:206:5 Optical and microstructural properties versus indium content in InxGa1-xN films grown by metal organic chemical vapor deposition
DOI:10.1063/1.3425761 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Gokarna, A.;Gauthier-Brun, A.;Liu, W.;Androussi, Y.;Dumont, E.;Dogheche, E.;Teng, J. H.;Chua, S. J.;Decoster, D.;
12:206:6 Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys
DOI:10.1063/1.4745008 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Li, Chong;Wu, Fengmin;Li, Shu-Shen;Xia, Jian-Bai;Li, Jingbo;
12:206:7 Properties of InxGa1-xN films in terahertz range
DOI:10.1063/1.3684836 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Gauthier-Brun, A.;Teng, J. H.;Dogheche, E.;Liu, W.;Gokarna, A.;Tonouchi, M.;Chua, S. J.;Decoster, D.;
12:206:8 Growth temperature dependent critical thickness for phase separation in thick (similar to 1 mu m) InxGa1-xN (x=0.2-0.4)
DOI:10.1016/j.jcrysgro.2015.02.100 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Yamamoto, A.;Hasan, Tanvir Md;Kodama, K.;Shigekawa, N.;Kuzuhara, M.;
12:206:9 Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1-xN thin films
DOI:10.1063/1.3624598 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Gorge, V.;Djebbour, Z.;Migan-Dubois, A.;Pareige, C.;Longeaud, C.;Pantzas, K.;Moudakir, T.;Gautier, S.;Orsal, G.;Voss, P. L.;Ougazzaden, A.;
12:207:1 Orientation-Controlled Alignment of Axially Modulated pn Silicon Nanowires
DOI:10.1021/nl103630c JN:NANO LETTERS PY:2010
TC:18 AU: Lee, Chi Hwan;Kim, Dong Rip;Zheng, Xiaolin;
12:207:2 Direct Growth of Nanowire Logic Gates and Photovoltaic Devices
DOI:10.1021/nl100011z JN:NANO LETTERS PY:2010
TC:19 AU: Kim, Dong Rip;Lee, Chi Hwan;Zheng, Xiaolin;
12:207:3 p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes
DOI:10.1063/1.3462319 JN:APPLIED PHYSICS LETTERS PY:2010
TC:25 AU: Huang, Chun-Ying;Yang, Ying-Jay;Chen, Ju-Ying;Wang, Chun-Hsiung;Chen, Yang-Fang;Hong, Lu-Sheng;Liu, Chie-Sheng;Wu, Chia-Yin;
12:207:4 Silicon nanowire-silver indium selenide heterojunction photodiodes
DOI:10.1088/0957-4484/24/37/375203 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Kulakci, Mustafa;Colakoglu, Tahir;Ozdemir, Baris;Parlak, Mehmet;Unalan, Husnu Emrah;Turan, Rasit;
12:207:5 Micellar block copolymer templated galvanic displacement for epitaxial nanowire device integration
DOI:10.1039/c1jm10693g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:4 AU: Doerk, Gregory S.;Dhong, Charles;Politi, Christine;Laboriante, Ian;Carraro, Carlo;Maboudian, Roya;
12:207:6 Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
DOI:10.1088/0957-4484/21/10/105701 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Habicht, S.;Zhao, Q. T.;Feste, S. F.;Knoll, L.;Trellenkamp, S.;Ghyselen, B.;Mantl, S.;
12:207:7 Thermodynamic and kinetic control of the lateral Si wire growth
DOI:10.1063/1.4869444 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Dedyulin, Sergey N.;Goncharova, Lyudmila V.;
12:207:8 Towards the next node in downsized devices
DOI:10.1088/0957-4484/21/10/100201 JN:NANOTECHNOLOGY PY:2010
TC:0 AU: Demming, Anna;
12:207:9 Transformable Functional Nanoscale Building Blocks with Wafer-Scale Silicon Nanowires
DOI:10.1021/nl104212e JN:NANO LETTERS PY:2011
TC:6 AU: Choi, Sung-Jin;Ahn, Jae-Hyuk;Han, Jin-Woo;Seol, Myeong-Lok;Moon, Dong-Il;Kim, Sungho;Choi, Yang-Kyu;
12:207:10 Single crystal silicon nanopillars, nanoneedles and nanoblades with precise positioning for massively parallel nanoscale device integration
DOI:10.1088/0957-4484/23/22/225303 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Roper, Christopher S.;Gutes, Albert;Carraro, Carlo;Howe, Roger T.;Maboudian, Roya;
12:207:11 The growth of axially modulated p-n GaN nanowires by plasma-enhanced chemical vapor deposition
DOI:10.1016/j.tsf.2012.09.026 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Wu, Tung-Hsien;Hong, Franklin Chau-Nan;
12:208:1 Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions
DOI:10.1021/acs.nanolett.5b00276 JN:NANO LETTERS PY:2015
TC:1 AU: Sun, Rong;Jacobsson, Daniel;Chen, I-Ju;Nilsson, Malin;Thelander, Claes;Lehmann, Sebastian;Dick, Kimberly A.;
12:208:2 Room-Temperature Synthesis of Self-Assembled Sb2S3 Films and Nanorings via a Two-Phase Approach
DOI:10.1021/la300244c JN:LANGMUIR PY:2012
TC:7 AU: Han, Qiaofeng;Yuan, Yawen;Liu, Xiaoheng;Wu, Xiaodong;Bei, Fengli;Wang, Xin;Xu, Kaijun;
12:208:3 On the growth of InAs nanowires by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.10.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Martelli, Faustino;Rubini, Silvia;Jabeen, Fauzia;Felisari, Laura;Grillo, Vincenzo;
12:208:4 Low-temperature growth of In-assisted silicon nanowires
DOI:10.1016/j.jcrysgro.2011.09.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Convertino, Annalisa;Cuscuna, Massimo;Nicotra, Giuseppe;Spinella, Corrado;Felisari, Laura;Fortunato, Guglielmo;Martelli, Faustino;
12:208:5 Low-temperature, self-catalyzed growth of Si nanowires
DOI:10.1088/0957-4484/21/25/255601 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Cuscuna, Massimo;Convertino, Annalisa;Mariucci, Luigi;Fortunato, Guglielmo;Felisari, Laura;Nicotra, Giuseppe;Spinella, Corrado;Pecora, Alessandro;Martelli, Faustino;
12:208:6 Epitaxial InP nanowire growth from Cu seed particles
DOI:10.1016/j.jcrysgro.2010.08.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Hillerich, Karla;Messing, Maria E.;Wallenberg, L. Reine;Deppert, Knut;Dick, Kimberly A.;
12:208:7 Formation of well-defined Cu2S dendrites on TEM grids from sulfur/CS2 under ambient conditions
DOI:10.1016/j.matlet.2012.06.092 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Han, Qiaofeng;Xu, Kaijun;
12:208:8 Effect of carbon tetrabromide on the morphology of GaAs nanowires
DOI:10.1088/0957-4484/22/16/165603 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Salehzadeh, O.;Watkins, S. P.;
12:208:9 Growth of copper sulfide dendrites and nanowires from elemental sulfur on TEM Cu grids under ambient conditions
DOI:10.1088/0957-4484/22/15/155607 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Han, Qiaofeng;Sun, Shanshan;Li, Jiansheng;Wang, Xin;
12:208:10 Mn-induced growth of InAs nanowires
DOI:10.1116/1.3385892 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:8 AU: Jabeen, F.;Piccin, M.;Felisari, L.;Grillo, V.;Bais, G.;Rubini, S.;Martelli, F.;d'Acapito, F.;Rovezzi, M.;Boscherini, F.;
12:208:11 Synthesis of Hierarchical Dorsal Spine Ag2S Structures by a Solid-Vapor Reaction: The Effect of Reagent Gas Composition
DOI:10.1155/2012/749481 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Muniz-Lerma, J. A.;Hernandez-Paz, J. F.;Farias-Mancilla, J. R.;Garcia Casillas, P. E.;Rodriguez Gonzalez, C. A.;
12:209:1 Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode
DOI:10.1103/PhysRevB.86.165318 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Wojcik, P.;Adamowski, J.;Woloszyn, M.;Spisak, B. J.;
12:209:2 Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire
DOI:10.1063/1.4868691 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Wojcik, P.;Adamowski, J.;Spisak, B. J.;Woloszyn, M.;
12:209:3 Zero field spin polarization in a two-dimensional paramagnetic resonant tunneling diode
DOI:10.1103/PhysRevB.83.155408 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Rueth, M.;Gould, C.;Molenkamp, L. W.;
12:209:4 Rashba spin-orbit interaction in a superlattice of quantum wires
DOI:10.1103/PhysRevB.85.045306 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Thorgilsson, Gunnar;Egues, J. Carlos;Loss, Daniel;Erlingsson, Sigurdur I.;
12:209:5 Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunnelling diode
DOI:10.1063/1.4811836 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Wojcik, P.;Adamowski, J.;Woloszyn, M.;Spisak, B. J.;
12:209:6 New cubic Cd1-xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy
DOI:10.1063/1.3514550 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Koo, T. K.;Byungsung, O.;Yu, Y-M.;Kim, D-J.;Kim, C-S.;Choi, Y. D.;Lee, J. W.;Yoon, M-Y.;Yu, P. Y.;Kang, T. W.;
12:209:7 Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes
DOI:10.1063/1.4729895 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Wojcik, Pawel;Spisak, Bartlomiej J.;Woloszyn, Maciej;Adamowski, Janusz;
12:209:8 Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes
DOI:10.1063/1.4891996 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Awan, I. T.;Galeti, H. V. A.;Galvao Gobato, Y.;Brasil, M. J. S. P.;Taylor, D.;Henini, M.;
12:209:9 Fano resonances in current-voltage characteristics of nanowires with embedded quantum dots
DOI:10.1103/PhysRevB.82.195311 JN:PHYSICAL REVIEW B PY:2010
TC:2 AU: Sowa-Rykowska, A.;Adamowski, J.;
12:209:10 Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes
DOI:10.1063/1.3668087 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Galvao Gobato, Y.;Galeti, H. V. A.;dos Santos, L. F.;Lopez-Richard, V.;Cesar, D. F.;Marques, G. E.;Brasil, M. J. S. P.;Orlita, M.;Kunc, J.;Maude, D. K.;Henini, M.;Airey, R. J.;
12:209:11 Periodicity of resonant tunneling current induced by the Stark resonances in semiconductor nanowire
DOI:10.1063/1.4826614 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Woloszyn, M.;Adamowski, J.;Wojcik, P.;Spisak, B. J.;
12:209:12 Energy spectra for quantum wires and two-dimensional electron gases in magnetic fields with Rashba and Dresselhaus spin-orbit interactions
DOI:10.1103/PhysRevB.82.155456 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Erlingsson, Sigurdur I.;Egues, J. Carlos;Loss, Daniel;
12:209:13 Rashba spin orbit interaction in a quantum wire superlattice (vol 85, 045306, 2012)
DOI:10.1103/PhysRevB.85.039904 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Thorgilsson, Gunnar;Egues, J. Carlos;Loss, Daniel;Erlingsson, Sigurdur I.;
12:210:1 Efficiency Enhancement of Organic Solar Cells Using Hydrophobic Antireflective Inverted Moth-Eye Nanopatterned PDMS Films
DOI:10.1002/aenm.201301315 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:18 AU: Leem, Jung Woo;Kim, Sehwan;Lee, Soo Hyun;Rogers, John A.;Kim, Eunkyoung;Yu, Jae Su;
12:210:2 Soft Elastomeric Nanopillar Stamps for Enhancing Absorption in Organic Thin-Film Solar Cells
DOI:10.1002/smll.201201881 JN:SMALL PY:2013
TC:7 AU: Hyun, Jerome K.;Ahn, Changui;Kang, Hyunbum;Kim, Hyeong Jun;Park, Junyong;Kim, Ki-Hyun;Ahn, Chi Won;Kim, Bumjoon J.;Jeon, Seokwoo;
12:210:3 Biomimetic microlens array with antireflective "moth-eye" surface
DOI:10.1039/c1sm05302g JN:SOFT MATTER PY:2011
TC:33 AU: Ko, Doo-Hyun;Tumbleston, John R.;Henderson, Kevin J.;Euliss, Larken E.;DeSimone, Joseph M.;Lopez, Rene;Samulski, Edward T.;
12:210:4 Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference
DOI:10.1088/0957-4484/24/23/235202 JN:NANOTECHNOLOGY PY:2013
TC:10 AU: Yang, Qiaoyin;Zhang, Xu A.;Bagal, Abhijeet;Guo, Wei;Chang, Chih-Hao;
12:210:5 Exploiting optical anisotropy to increase the external quantum efficiency of flexible P3HT:PCBM blend solar cells at large incident angles
DOI:10.1016/j.solmat.2011.03.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:8 AU: Chuang, Shang-Yu;Yu, Chen-Chieh;Chen, Hsuen-Li;Su, Wei-Fang;Chen, Chun-Wei;
12:211:1 Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
DOI:10.1063/1.3555470 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Amano, H.;Pearton, S. J.;Lee, I. -H.;Sun, Q.;Han, J.;Karpov, S. Yu.;
12:211:2 Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire
DOI:10.1016/j.mseb.2009.11.030 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:16 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Markov, A. V.;Sun, Q.;Zhang, Y.;Yerino, C. D.;Ko, T. -S.;Lee, I. -H.;Han, J.;
12:211:3 Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process
DOI:10.1063/1.3658026 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Polyakov, A. Y.;Jang, Lee-Woon;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Yugova, T. G.;Reznik, V. Y.;Pearton, S. J.;Baik, Kwang Hyeon;Hwang, Sung-Min;Jung, Sukkoo;Lee, In-Hwan;
12:211:4 Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
DOI:10.1063/1.3680877 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Polyakov, A. Y.;Jang, Lee-Woon;Jo, Dong-Seob;Lee, In-Hwan;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Baik, Kwang Hyeon;Hwang, Sung-Min;
12:211:5 Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy
DOI:10.1063/1.3626280 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Meneghini, M.;de Santi, C.;Trivellin, N.;Orita, K.;Takigawa, S.;Tanaka, T.;Ueda, D.;Meneghesso, G.;Zanoni, E.;
12:211:6 Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements
DOI:10.1063/1.3527088 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Meneghini, M.;Trivellin, N.;Orita, K.;Takigawa, S.;Tanaka, T.;Ueda, D.;Meneghesso, G.;Zanoni, E.;
12:211:7 Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
DOI:10.1063/1.3499669 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Ashraf, H.;Arshad, M. Imran;Faraz, S. M.;Wahab, Q.;Hageman, P. R.;Asghar, M.;
12:211:8 Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes
DOI:10.1063/1.3600338 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Marona, L.;Perlin, P.;Czernecki, R.;Leszczynski, M.;Bockowski, M.;Jakiela, R.;Suski, T.;Najda, S. P.;
12:211:9 Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
DOI:10.1063/1.4834697 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Meneghini, M.;Carraro, S.;Meneghesso, G.;Trivellin, N.;Mura, G.;Rossi, F.;Salviati, G.;Holc, K.;Weig, T.;Schade, L.;Karunakaran, M. A.;Wagner, J.;Schwarz, U. T.;Zanoni, E.;
12:211:10 Dislocation-related trap levels in nitride-based light emitting diodes
DOI:10.1063/1.4879644 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Venturi, Giulia;Castaldini, Antonio;Cavallini, Anna;Meneghini, Matteo;Zanoni, Enrico;Zhu, Dandan;Humphreys, Colin;
12:211:11 a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers
DOI:10.1116/1.3491187 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:0 AU: Polyakov, A. Y.;Markov, A. V.;Mezhennyi, M. V.;Donskov, A. A.;Malakhov, S. S.;Govorkov, A. V.;Kozlova, Yu. P.;Pavlov, V. F.;Smirnov, N. B.;Yugova, T. G.;Lee, I. -H.;Han, J.;Sun, Q.;Pearton, S. J.;
12:212:1 Micro and nano analysis of 0.2 Omega mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
DOI:10.1063/1.3661167 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Fontsere, A.;Perez-Tomas, A.;Placidi, M.;Llobet, J.;Baron, N.;Chenot, S.;Cordier, Y.;Moreno, J. C.;Gammon, P. M.;Jennings, M. R.;Porti, M.;Bayerl, A.;Lanza, M.;Nafria, M.;
12:212:2 Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
DOI:10.1088/0957-4484/23/39/395204 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Fontsere, A.;Perez-Tomas, A.;Placidi, M.;Llobet, J.;Baron, N.;Chenot, S.;Cordier, Y.;Moreno, J. C.;Jennings, M. R.;Gammon, P. M.;Fisher, C. A.;Iglesias, V.;Porti, M.;Bayerl, A.;Lanza, M.;Nafria, M.;
12:212:3 Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3479928 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Gong, Rumin;Wang, Jinyan;Liu, Shenghou;Dong, Zhihua;Yu, Min;Wen, Cheng P.;Cai, Yong;Zhang, Baoshun;
12:212:4 Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures
DOI:10.1063/1.4790384 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kim, Seongjun;Ryou, Jae-Hyun;Dupuis, Russell D.;Kim, Hyunsoo;
12:212:5 Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage
DOI:10.1116/1.4874599 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:3 AU: Liu, Yi;Singh, Sarab Preet;Ngoo, Yi Jie;Kyaw, Lwin Min;Bera, Milan Kumar;Lo, Quo Qiang;Chor, Eng Fong;
12:212:6 Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
DOI:10.1063/1.4748115 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Fontsere, A.;Perez-Tomas, A.;Placidi, M.;Llobet, J.;Baron, N.;Chenot, S.;Cordier, Y.;Moreno, J. C.;Iglesias, V.;Porti, M.;Bayerl, A.;Lanza, M.;Nafria, M.;
12:212:7 Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma
DOI:10.1063/1.3697684 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Ha, Woo Jin;Chhajed, Sameer;Oh, Seung Jae;Hwang, Sunyong;Kim, Jong Kyu;Lee, Jae-Hoon;Kim, Ki-Se;
12:212:8 Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
DOI:10.1116/1.3545811 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:8 AU: Lo, C. -F.;Liu, L.;Chang, C. Y.;Ren, F.;Craciun, V.;Pearton, S. J.;Heo, Y. W.;Laboutin, O.;Johnson, J. W.;
12:212:9 Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire
DOI:10.1063/1.4794411 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Fontsere, A.;Perez-Tomas, A.;Placidi, M.;Baron, N.;Chenot, S.;Moreno, J. C.;Rennesson, S.;Cordier, Y.;
12:212:10 Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics
DOI:10.1063/1.3552932 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Gonschorek, M.;Carlin, J. -F.;Feltin, E.;Py, M. A.;Grandjean, N.;
12:212:11 Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
DOI:10.1116/1.4862165 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Chiu, Yu-Sheng;Lin, Tai-Ming;Nguyen, Hong-Quan;Weng, Yu-Chen;Nguyen, Chi-Lang;Lin, Yueh-Chin;Yu, Hung-Wei;Chang, Edward Yi;Lee, Ching-Ting;
12:212:12 Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs
DOI:10.1016/j.mseb.2013.12.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:2 AU: Mahajan, Somna S.;Dhaul, Anuradha;Laishram, Robert;Kapoor, Sonalee;Vinayak, Seema;Sehgal, B. K.;
12:213:1 18.45%-Efficient Multi-Crystalline Silicon Solar Cells with Novel Nanoscale Pseudo-Pyramid Texture
DOI:10.1002/adfm.201401589 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Ye, Xiaoya;Zou, Shuai;Chen, Kexun;Li, Jianjiang;Huang, Jie;Cao, Fang;Wang, Xusheng;Zhang, Lingjun;Wang, Xue-Feng;Shen, Mingrong;Su, Xiaodong;
12:213:2 Silicon doping effect on SF6/O-2 plasma chemical texturing
DOI:10.1063/1.3603051 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Dilonardo, Elena;Bianco, Giuseppe Valerio;Giangregorio, Maria Michela;Losurdo, Maria;Capezzuto, Pio;Bruno, Giovanni;
12:213:3 Surface chemistry and morphology effects on optoelectronic transport at metal/nanostructured silicon/silicon structures
DOI:10.1063/1.4710989 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Ambrico, Marianna;Di Mundo, Rosa;Ambrico, Paolo Francesco;d'Agostino, Riccardo;Ligonzo, Teresa;Palumbo, Fabio;
12:213:4 Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures
DOI:10.1016/j.solmat.2009.12.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:37 AU: Moreno, M.;Daineka, D.;Roca i Cabarrocas, P.;
12:213:5 Improved Black Silicon for Photovoltaic Applications
DOI:10.1002/aenm.201201038 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:15 AU: Algasinger, Michael;Paye, Julie;Werner, Florian;Schmidt, Jan;Brandt, Martin S.;Stutzmann, Martin;Koynov, Svetoslav;
12:213:6 Black thin film silicon
DOI:10.1063/1.3626900 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Koynov, Svetoslav;Brandt, Martin S.;Stutzmann, Martin;
12:213:7 Phase-resolved optical emission spectroscopy for an electron cyclotron resonance etcher
DOI:10.1063/1.4802440 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Milosavljevic, Vladimir;MacGearailt, Niall;Cullen, P. J.;Daniels, Stephen;Turner, Miles M.;
12:213:8 Porous silicon formation during Au-catalyzed etching
DOI:10.1063/1.4873892 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Algasinger, Michael;Bernt, Maximilian;Koynov, Svetoslav;Stutzmann, Martin;
12:213:9 Nanoporous black multi-crystalline silicon solar cells: realization of low reflectance and explanation of high recombination loss
DOI:10.1016/j.mssp.2012.08.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Shi, Jianwei;Xu, Fei;Ma, Zhongquan;Zhou, Pinghua;Zheng, Lingling;Yang, Jie;Chen, Dongsheng;Jiang, Zuimin;
12:213:10 Performance enhancement of mc-Si solar cells due to synergetic effect of plasma texturization and Sin(x):H AR coating
DOI:10.1016/j.solmat.2009.06.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:4 AU: Prasad, B.;Bhattacharya, S.;Saxena, A. K.;Reddy, S. R.;Bhogra, R. K.;
12:213:11 Design of a top mirror for the n-GaAs homojunction far-infrared/terahertz detectors
DOI:10.1063/1.3491043 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Deng, G. G.;Zhang, Y. H.;Shen, W. Z.;
12:213:12 Porous silicon Bragg mirrors on single- and multi-crystalline silicon for solar cells
DOI:10.1016/j.renene.2012.12.031 JN:RENEWABLE ENERGY PY:2013
TC:9 AU: Ivanov, I. I.;Skryshevsky, V. A.;Nychyporuk, T.;Lemiti, M.;Makarov, A. V.;Klyui, N. I.;Tretyak, O. V.;
12:214:1 Selective chemical etch of gallium nitride by phosphoric acid
DOI:10.1116/1.4719528 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:12 AU: Lee, Chongmin;Hite, Jennifer K.;Mastro, Michael A.;Freitas, Jaime A., Jr.;Eddy, Charles R., Jr.;Kim, Hong-Yeol;Kim, Jihyun;
12:214:2 Perspectives on future directions in III-N semiconductor research
DOI:10.1116/1.4813687 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:9 AU: Eddy, Charles R., Jr.;Nepal, Neeraj;Hite, Jennifer K.;Mastro, Michael A.;
12:214:3 Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
DOI:10.1063/1.3656987 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Kirste, Ronny;Collazo, Ramon;Callsen, Gordon;Wagner, Markus R.;Kure, Thomas;Reparaz, Juan Sebastian;Mita, Seji;Xie, Jinqiao;Rice, Anthony;Tweedie, James;Sitar, Zlatko;Hoffmann, Axel;
12:214:4 GaN vertical and lateral polarity heterostructures on GaN substrates
DOI:10.1016/j.jcrysgro.2011.08.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Hite, J. K.;Bassim, N. D.;Twigg, M. E.;Mastro, M. A.;Kub, F. J.;Eddy, C. R., Jr.;
12:214:5 Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
DOI:10.1016/j.jcrysgro.2011.12.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Feigelson, B. N.;Anderson, T. J.;Abraham, M.;Freitas, J. A.;Hite, J. K.;Eddy, C. R.;Kub, F. J.;
12:214:6 Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering
DOI:10.1007/s11664-014-3225-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Sui, Yanping;Wang, Bin;Zhao, Zhide;Xu, Wei;Li, Xiaoliang;Yu, Guanghui;Wang, Xinzhong;
12:214:7 The effect of N-polar GaN domains as Ohmic contacts
DOI:10.1063/1.3491173 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Xie, J.;Mita, S.;Collazo, R.;Rice, A.;Tweedie, J.;Sitar, Z.;
12:214:8 Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
DOI:10.1063/1.4800554 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Rigler, Martin;Zgonik, Marko;Hoffmann, Marc P.;Kirste, Ronny;Bobea, Milena;Collazo, Ramon;Sitar, Zlatko;Mita, Seiji;Gerhold, Michael;
12:214:9 Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
DOI:10.1063/1.4768526 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Hussey, Lindsay;Mita, Seiji;Xie, Jinqiao;Guo, Wei;Akouala, Christer-Rajiv;Rajan, Joseph;Bryan, Isaac;Collazo, Ramon;Sitar, Zlatko;
12:214:10 Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
DOI:10.1063/1.4892618 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Greenlee, Jordan D.;Feigelson, Boris N.;Anderson, Travis J.;Tadjer, Marko J.;Hite, Jennifer K.;Mastro, Michael A.;Eddy, Charles R., Jr.;Hobart, Karl D.;Kub, Francis J.;
12:214:11 Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures
DOI:10.1063/1.4863120 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shelton, Christopher T.;Sachet, Edward;Paisley, Elizabeth A.;Hoffmann, Marc P.;Rajan, Joseph;Collazo, Ramon;Sitar, Zlatko;Maria, Jon-Paul;
12:214:12 Facet growth of self-separated GaN layers through HVPE on large square-patterned template
DOI:10.1016/j.jcrysgro.2014.01.059 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Sui, Yanping;Wang, Bin;Zhao, Zhide;Xu, Wei;Li, Xiaoliang;Wang, Xinzhong;Yu, Guanghui;
12:214:13 Broadband measurements of the refractive indices of bulk gallium nitride
DOI:10.1364/OME.4.001287 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Bowman, Steven R.;Brown, Christopher G.;Brindza, Michael;Beadie, Guy;Hite, Jennifer K.;Freitas, Jaime A.;Eddy, Charles R., Jr.;Meyer, Jerry R.;Vurgaftman, Igor;
12:214:14 Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.12.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Park, Hyun Jong;Kim, Hong-Yeol;Bae, Jun Young;Shin, Seonghwan;Kim, Jihyun;
12:215:1 Persistent enhancement of the carrier density in electron irradiated InAs nanowires
DOI:10.1088/0957-4484/24/27/275706 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Durand, Corentin;Berthe, Maxime;Makoudi, Younes;Nys, Jean-Philippe;Leturcq, Renaud;Caroff, Philippe;Grandidier, Bruno;
12:215:2 Controlling the Electrical Transport Properties of Nanocontacts to Nanowires
DOI:10.1021/nl503743t JN:NANO LETTERS PY:2015
TC:0 AU: Lord, Alex M.;Maffeis, Thierry G.;Kryvchenkova, Olga;Cobley, Richard J.;Kalna, Karol;Kepaptsoglou, Despoina M.;Rarnasse, Quentin M.;Walton, Alex S.;Ward, Michael B.;Koeble, Juergen;Wilks, Steve P.;
12:215:3 Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates
DOI:10.1021/nl5037879 JN:NANO LETTERS PY:2015
TC:2 AU: Bussone, Genziana;Schaefer-Eberwein, Heiko;Dimakis, Emmanouil;Biermanns, Andreas;Carbone, Dina;Tahraoui, Abbes;Geelhaar, Lutz;Bolivar, Peter Haring;Schuelli, Tobias U.;Pietsch, Ullrich;
12:215:4 Resistance and dopant profiling along freestanding GaAs nanowires
DOI:10.1063/1.4823547 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Korte, Stefan;Steidl, Matthias;Prost, Werner;Cherepanov, Vasily;Voigtlaender, Bert;Zhao, Weihong;Kleinschmidt, Peter;Hannappel, Thomas;
12:216:1 Light extraction limits in textured GaN-InGaN light-emitting diodes: Radiative transfer analysis
DOI:10.1063/1.3655155 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Heikkila, Oskari;Oksanen, Jani;Tulkki, Jukka;
12:216:2 Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
DOI:10.1063/1.4794066 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Homeyer, E.;Mattila, P.;Oksanen, J.;Sadi, T.;Nykanen, H.;Suihkonen, S.;Symonds, C.;Tulkki, J.;Tuomisto, F.;Sopanen, M.;Bellessa, J.;
12:216:3 Low energy electron beam induced vacancy activation in GaN
DOI:10.1063/1.3696047 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Nykanen, H.;Suihkonen, S.;Kilanski, L.;Sopanen, M.;Tuomisto, F.;
12:216:4 Observing and modeling light propagation in polymer films
DOI:10.1063/1.4800941 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Chen, Po-Jui;Wang, Meng-Kuan;Hsu, Jui-Hung;Yang, Arnold C. -M.;White, Jonathon David;
12:216:5 Influence of internal absorption and interference on the optical efficiency of thin-film GaN-InGaN light-emitting diodes
DOI:10.1063/1.4798326 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Heikkila, Oskari;Oksanen, Jani;Tulkki, Jukka;
12:216:6 Low energy electron beam induced damage on InGaN/GaN quantum well structure
DOI:10.1063/1.3574655 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Nykanen, H.;Mattila, P.;Suihkonen, S.;Riikonen, J.;Quillet, E.;Homeyer, E.;Bellessa, J.;Sopanen, M.;
12:216:7 Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation
DOI:10.1063/1.4770465 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Li, Y. L.;Wang, X. J.;He, S. M.;Zhang, B.;Sun, L. X.;Li, Y. D.;Guo, Q.;Chen, C. Q.;Chen, Z. H.;Lu, W.;
12:216:8 A fluctuational electrodynamics model for the optimization of light-extraction efficiency in thin-film light-emitting diodes
DOI:10.1063/1.4843656 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Heikkila, Oskari;Oksanen, Jani;Tulkki, Jukka;
12:216:9 Effect of plasmonic losses on light emission enhancement in quantum-wells coupled to metallic gratings
DOI:10.1063/1.4845875 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Sadi, Toufik;Oksanen, Jani;Tulkki, Jukka;
12:216:10 Massive Enhancement of Photoluminescence through Nanofilm Dewetting
DOI:10.1021/nn4009752 JN:ACS NANO PY:2013
TC:6 AU: Lee, Peiwei;Li, Wei-Cheng;Chen, Bin-Jih;Yang, Chih-Wei;Chang, Chun-Chih;Botiz, Ioan;Reiter, Guenter;Lin, Tsang-Lang;Tang, Jau;Yang, Arnold Chang-Mou;
12:216:11 Large Enhancements in Optoelectronic Efficiencies of Nano-plastically Stressed Conjugated Polymer Strands
DOI:10.1021/nn202117e JN:ACS NANO PY:2011
TC:6 AU: Tung, Kuang-Po;Chen, Chein-Chung;Lee, Peiwei;Liu, Yi-Wei;Hong, Tzay-Ming;Hwang, Kuo Chu;Hsu, Jui Hung;White, Jonathan David;Yang, Arnold Chang-Mou;
12:217:1 Investigation of fast and slow decays in InGaN/GaN quantum wells
DOI:10.1063/1.3627166 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Sun, Guan;Xu, Guibao;Ding, Yujie J.;Zhao, Hongping;Liu, Guangyu;Zhang, Jing;Tansu, Nelson;
12:217:2 Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
DOI:10.1016/j.tsf.2012.05.038 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Feng, Zhe Chuan;Zhu, Li-Hong;Kuo, Ting-Wei;Wu, C. -Y.;Tsai, Hong-Ling;Liu, Bao-Lin;Yang, Jer-Ren;
12:217:3 Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm
DOI:10.1063/1.3638703 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Liu, H. F.;Liu, W.;Yong, A. M.;Zhang, X. H.;Chua, S. J.;Chi, D. Z.;
12:217:4 Green and blue emissions in phase-separated InGaN quantum wells
DOI:10.1063/1.4827205 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Wang, Fan;Ji, Ziwu;Wang, Qiang;Wang, Xuesong;Qu, Shuang;Xu, Xiangang;Lv, Yuanjie;Feng, Zhihong;
12:217:5 MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers
DOI:10.1016/j.jcrysgro.2012.09.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Tuna, Oe.;Hahn, H.;Kalisch, H.;Giesen, C.;Vescan, A.;Rzheutski, M. V.;Pavlovskii, V. N.;Lutsenko, E. V.;Yablonskii, G. P.;Heuken, M.;
12:217:6 Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes
DOI:10.1063/1.3511712 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Lee, Sung-Nam;Kim, Jihoon;Kim, Kyoung-Kook;Kim, Hyunsoo;Kim, Han-Ki;
12:217:7 Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
DOI:10.1063/1.4808016 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Albert, S.;Bengoechea-Encabo, A.;Kong, X.;Sanchez-Garcia, M. A.;Calleja, E.;Trampert, A.;
12:217:8 Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
DOI:10.1063/1.3692087 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Long, H.;Yu, T. J.;Liu, L.;Yang, Z. J.;Fang, H.;Zhang, G. Y.;
12:217:9 Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers
DOI:10.1016/j.jcrysgro.2012.07.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Tuna, Oe;Linhart, W. M.;Lutsenko, E. V.;Rzheutski, M. V.;Yablonskii, G. P.;Veal, T. D.;McConville, C. F.;Giesen, C.;Kalisch, H.;Vescan, A.;Heuken, M.;
12:217:10 Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films
DOI:10.1007/s11664-009-0969-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:5 AU: Masui, Hisashi;Melo, Thiago;Sonoda, Junichi;Weisbuch, Claude;Nakamura, Shuji;Denbaars, Steven P.;
12:217:11 Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures
DOI:10.1063/1.3598137 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: O'Malley, S. M.;Revesz, P.;Kazimirov, A.;Sirenko, A. A.;
12:217:12 Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes
DOI:10.1016/j.tsf.2010.05.016 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Lee, Jiunn-Chyi;Wu, Ya-Fen;
12:217:13 Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells
DOI:10.1016/j.tsf.2011.01.158 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Lee, D. U.;Ryu, J. T.;You, J. H.;Kim, T. W.;Jeon, M. H.;Yoo, K. H.;Cho, C. Y.;Park, S. J.;
12:218:1 Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors
DOI:10.1021/nl102239q JN:NANO LETTERS PY:2010
TC:33 AU: Vallett, Aaron L.;Minassian, Sharis;Kaszuba, Phil;Datta, Suman;Redwing, Joan M.;Mayer, Theresa S.;
12:218:2 High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors
DOI:10.1063/1.3694046 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Rafiq, M. A.;Masubuchi, K.;Durrani, Z. A. K.;Colli, A.;Mizuta, H.;Milne, W. I.;Oda, S.;
12:218:3 Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors
DOI:10.1063/1.4833544 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Choe, Minhyeok;Lee, Byoung Hoon;Park, Woojin;Kang, Jang-Won;Jeong, Sehee;Cho, Kyungjune;Hong, Woong-Ki;Lee, Byoung Hun;Lee, Kwanghee;Park, Seong-Ju;Lee, Takhee;
12:218:4 Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD
DOI:10.1155/2014/951360 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Park, Ji-Hyeon;Kissinger, Suthan;Ra, Yong Ho;San, Kang;Park, Min Ji;Yoo, Kyung-Hwa;Lee, Cheul-Ro;
12:218:5 Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness
DOI:10.1063/1.3298910 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Choe, Minhyeok;Jo, Gunho;Maeng, Jongsun;Hong, Woong-Ki;Jo, Minseok;Wang, Gunuk;Park, Woojin;Lee, Byoung Hun;Hwang, Hyunsang;Lee, Takhee;
12:218:6 UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation
DOI:10.1016/j.tsf.2012.01.015 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Choe, Minhyeok;Hong, Woong-Ki;Park, Woojin;Yoon, Jongwon;Jo, Gunho;Kwon, Taehyeon;Welland, Mark E.;Lee, Takhee;
12:218:7 Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications
DOI:10.1063/1.4729930 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Lee, M.;Jeon, Y.;Jung, J-C.;Koo, S-M.;Kim, S.;
12:218:8 Intrinsic charge transport of conjugated organic molecules in electromigrated nanogap junctions
DOI:10.1063/1.3578345 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Song, Hyunwook;Kim, Youngsang;Jeong, Heejun;Reed, Mark A.;Lee, Takhee;
12:218:9 Bicrystalline GaN nanowires grown by the formation of Pt plus Ga solid solution nano-droplets on Si(111) using MOCVD
DOI:10.1016/j.jcrysgro.2010.05.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Lee, Young-Min;Navamathavan, R.;Song, Ki-Young;Park, Ji-Hyun;Kim, Dong-Wook;Kissinger, Suthan;Kim, Jin-Soo;Lee, Cheul-Ro;
12:219:1 Effect of scattering from localized surface plasmon resonance on improving the luminescence efficiency of silicon nitride light-emitting devices
DOI:10.1007/s11051-013-1419-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Wang, Feng;Ren, Changrui;Li, Dongsheng;Yang, Deren;
12:219:2 Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
DOI:10.1063/1.3678632 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Wang, Feng;Li, Dongsheng;Yang, Deren;Que, Duanlin;
12:219:3 Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling
DOI:10.1063/1.4711033 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Huh, Chul;Choi, Chel-Jong;Kim, Wanjoong;Kim, Bong Kyu;Park, Byoung-Jun;Jang, Eun-Hye;Kim, Sang-Hyeob;Sung, Gun Yong;
12:219:4 Performance enhancement of GaN-based light-emitting diodes by surface plasmon coupling and scattering grating
DOI:10.1007/s10853-013-7363-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:5 AU: Dang, Suihu;Li, Chunxia;Jia, Wei;Liu, Hairui;Zhang, Zhuxia;Li, Tianbao;Liu, Xuguang;Han, Peide;Xu, Bingshe;
12:219:5 Blue light emitting diode internal and injection efficiency
DOI:10.1063/1.4739409 JN:AIP ADVANCES PY:2012
TC:14 AU: Titkov, Ilya E.;Sannikov, Denis A.;Park, Young-Min;Son, Joong-Kon;
12:219:6 Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiNx films
DOI:10.1063/1.3663530 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Lin, Cheng-Dao;Cheng, Chih-Hsien;Lin, Yung-Hsiang;Wu, Chung-Lun;Pai, Yi-Hao;Lin, Gong-Ru;
12:219:7 Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons
DOI:10.1063/1.4793757 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Wang, Feng;Li, Dongsheng;Jin, Lu;Yang, Deren;Que, Duanlin;
12:219:8 Photo-enhanced chemical etched GaN LED on silicon substrate
DOI:10.1016/j.jcrysgro.2011.01.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Kim, Hong-Yeol;Mastro, Michael A.;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Jihyun;
12:219:9 Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
DOI:10.1007/s00339-010-6117-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Cen, Z. H.;Chen, T. P.;Ding, L.;Liu, Z.;Wong, J. I.;Yang, M.;Goh, W. P.;Fung, S.;
12:219:10 Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature
DOI:10.1063/1.4861737 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Chen, D. Y.;Sun, Y.;He, Y. J.;Xu, L.;Xu, J.;
12:220:1 AlGaN solar-blind avalanche photodiodes with high multiplication gain
DOI:10.1063/1.3515903 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Sun, Lu;Chen, Jilin;Li, Jianfei;Jiang, Hao;
12:220:2 Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes
DOI:10.1063/1.4861148 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:11 AU: Wang, Xiaodong;Hu, Weida;Pan, Ming;Hou, Liwei;Xie, Wei;Xu, Jintong;Li, Xiangyang;Chen, Xiaoshuang;Lu, Wei;
12:220:3 GaN avalanche photodiodes grown on m-plane freestanding GaN substrate
DOI:10.1063/1.3432408 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Vashaei, Z.;Cicek, E.;Bayram, C.;McClintock, R.;Razeghi, M.;
12:220:4 Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
DOI:10.1063/1.4772984 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Huang, Y.;Chen, D. J.;Lu, H.;Dong, K. X.;Zhang, R.;Zheng, Y. D.;Li, L.;Li, Z. H.;
12:220:5 Characteristics of polarization-doped N-face III-nitride light-emitting diodes
DOI:10.1063/1.3687181 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Dong, Kexiu;Chen, Dunjun;Liu, Bin;Lu, Hai;Chen, Peng;Zhang, Rong;Zheng, Youdou;
12:220:6 Enhanced Performance of Mg0.1Zn0.9O UV Photodetectors Using Photoelectrochemical Treatment and Silica Nanospheres
DOI:10.1155/2014/972869 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Lee, Hsin-Ying;Lin, Yu-Chang;Lee, Meng-Ju;Uen, Wu-Yih;Sreenivas, Kondepudy;
12:220:7 GaN/SiC avalanche photodiodes
DOI:10.1063/1.3636412 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Zhou, Qiugui;McIntosh, Dion C.;Lu, Zhiwen;Campbell, Joe C.;Sampath, Anand V.;Shen, Hongen;Wraback, Michael;
12:220:8 Evaluation of the interface of thin GaN layers on c- and m-plane ZnO substrates by Rutherford backscattering
DOI:10.1063/1.3610958 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Izawa, Y.;Oga, T.;Ida, T.;Kuriyama, K.;Hashimoto, A.;Kotake, H.;Kamijoh, T.;
12:220:9 P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes
DOI:10.1063/1.4748793 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Sampath, A. V.;Zhou, Q. G.;Enck, R. W.;McIntosh, D.;Shen, H.;Campbell, J. C.;Wraback, M.;
12:220:10 Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter
DOI:10.1063/1.4818551 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Rodak, L. E.;Sampath, A. V.;Gallinat, C. S.;Chen, Y.;Zhou, Q.;Campbell, J. C.;Shen, H.;Wraback, M.;
12:220:11 Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2013.11.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Xia, Y.;Brault, J.;Vennegues, P.;Nemoz, M.;Teisseire, M.;Leroux, M.;Chauveau, J. -M.;
12:220:12 Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates
DOI:10.1007/s11664-013-2537-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:6 AU: Suvarna, Puneet;Tungare, Mihir;Leathersich, Jeffrey M.;Agnihotri, Pratik;Shahedipour-Sandvik, F.;Bell, L. Douglas;Nikzad, Shouleh;
12:221:1 Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers
DOI:10.1063/1.4851215 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Welna, M.;Kudrawiec, R.;Kaminska, A.;Kozanecki, A.;Laumer, B.;Eickhoff, M.;Misiewicz, J.;
12:221:2 Manifestation of spin-spin interaction between oxygen vacancy and magnesium in ZnMgO nanorods by electron paramagnetic resonance studies
DOI:10.1063/1.3659297 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Bera, A.;Basak, D.;
12:221:3 Magneto-optical spectrum of ZnO nanorods
DOI:10.1063/1.3686139 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Xiong, Wen;
12:221:4 Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires
DOI:10.1063/1.4851077 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Xiong, Wen;Chen, Wensuo;
12:221:5 Tuning electronic transport of ZnO micro/nanowires by a transverse electric field
DOI:10.1063/1.3616141 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Zhang, Qi;Qi, Junjie;Huang, Yunhua;Li, Xin;Zhang, Yue;
12:221:6 Optical transition dynamics in ZnO/ZnMgO multiple quantum well structures with different well widths grown on ZnO substrates
DOI:10.1063/1.3284959 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Li, Song-Mei;Kwon, Bong-Joon;Kwack, Ho-Sang;Jin, Li-Hua;Cho, Yong-Hoon;Park, Young-Sin;Han, Myung-Soo;Park, Young-Sik;
12:221:7 Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film
DOI:10.1063/1.3646116 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Chia, C. H.;Chen, J. N.;Hu, Y. M.;
12:221:8 Magneto-optical spectrum of Mn-doped ZnO nanorods
DOI:10.1063/1.4747916 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Xiong, Wen;
12:221:9 Biexciton emission from sol-gel ZnMgO nanopowders
DOI:10.1063/1.3428780 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Chia, C. H.;Lai, Y. J.;Hsu, W. L.;Han, T. C.;Chiou, J. W.;Hu, Y. M.;Lin, Y. C.;Fan, W. C.;Chou, W. C.;
12:221:10 The Dilute Magnetic and Optical Properties of Mn-Doped ZnO Nanowires
DOI:10.1155/2011/464538 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Ma, Xiying;Lou, Caoxin;
12:222:1 Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
DOI:10.1063/1.3373610 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Schubert, Martin F.;Schubert, E. Fred;
12:222:2 Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
DOI:10.1063/1.3464976 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Son, Jun Ho;Lee, Jong-Lam;
12:222:3 Stress-relaxed growth of n-GaN epilayers
DOI:10.1063/1.4710561 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ryu, J. H.;Katharria, Y. S.;Kim, H. Y.;Kim, H. K.;Ko, K. B.;Han, N.;Kang, J. H.;Park, Y. J.;Suh, E. -K.;Hong, C. -H.;
12:222:4 Effects of polarization-field tuning in GaInN light-emitting diodes
DOI:10.1063/1.3609783 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Xu, Jiuru;Schubert, Martin F.;Zhu, Di;Cho, Jaehee;Schubert, E. Fred;Shim, Hyunwook;Sone, Cheolsoo;
12:222:5 Improvements in (11(2)over-bar2) semipolar GaN crystal quality by graded superlattices
DOI:10.1016/j.tsf.2011.09.049 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Xu, S. R.;Zhang, J. C.;Cao, Y. R.;Zhou, X. W.;Xue, J. S.;Lin, Z. Y.;Ma, J. C.;Bao, F.;Hao, Y.;
12:222:6 Influence of Pre-trimethylindium flow treatment on blue light emitting diode
DOI:10.1016/j.tsf.2013.11.108 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Xu, Bing;Zhao, Jun Liang;Dai, Hai Tao;Wang, Shu Guo;Lin, Ray-Ming;Chu, Fu-Chuan;Huang, Chou-Hsiung;Yu, Sheng-Fu;Sun, Xiao Wei;
12:222:7 Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire
DOI:10.1103/PhysRevB.81.233304 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Song, J. -S.;Rho, H.;Jeong, M. S.;Ju, J. -W.;Lee, I. -H.;
12:222:8 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
DOI:10.1016/j.jallcom.2012.06.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Zhao, D. G.;Jiang, D. S.;Le, L. C.;Wu, L. L.;Li, L.;Zhu, J. J.;Wang, H.;Liu, Z. S.;Zhang, S. M.;Jia, Q. J.;Yang, Hui;
12:222:9 Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact
DOI:10.1063/1.3280866 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Schubert, Martin F.;
12:222:10 Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption
DOI:10.1016/j.jcrysgro.2011.04.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Feng, Shih-Wei;Tsai, Chin-Yi;Wang, Hsiang-Chen;Lin, Hung-Cheng;Chyi, Jen-Inn;
12:222:11 The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells
DOI:10.1016/j.tsf.2011.04.004 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Feng, Shih-Wei;Lin, Hung-Cheng;Chyi, Jen-Inn;Tsai, Chin-Yi;Huang, C. J.;Wang, Hsiang-Chen;Yang, Fann-Wei;Lin, Yen-Sheng;
12:222:12 Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres
DOI:10.1016/j.matlet.2014.02.091 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Han, Nam;Park, Young Jae;Han, Min;Ryu, Beo Deul;Ko, Kang Bok;Chandramohan, S.;Choi, Chel-Jong;Tran Viet Cuong;Hong, Chang-Hee;
12:223:1 Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
DOI:10.1016/j.jcrysgro.2013.11.066 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Li, Huijie;Liu, Changbo;Liu, Guipeng;Wei, Hongyuan;Jiao, Chunmei;Wang, Jianxia;Zhang, Heng;Jin, Dong Dong;Feng, Yuxia;Yang, Shaoyan;Wang, Lianshan;Zhu, Qinsheng;Wang, Zhan-Guo;
12:223:2 Studies on strain relaxation and in-plane orientation of La0.7Ca0.3MnO3 film by grazing incidence X-ray diffraction
DOI:10.1016/j.jallcom.2009.10.264 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Tan, W. S.;Wu, H. P.;Deng, K. M.;Wu, X. S.;Jia, Q. J.;Gao, J.;
12:223:3 Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field: Ab initio calculations
DOI:10.1103/PhysRevB.81.041312 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Yilmaz, Hulusi;Weiner, Brad R.;Morell, Gerardo;
12:223:4 Exchange bias induced by the fully strained La2/3Ca1/3MnO3 dead layers
DOI:10.1063/1.4857935 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Xie, Q. Y.;Wu, X. S.;Gao, J.;Jia, Q. J.;
12:223:5 Substrate effects on the ordering nanostructure for La2/3Ca1/3MnO3 ultrathin films
DOI:10.1016/j.jcrysgro.2010.01.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Fu, Min;Xie, Qiyun;Gu, Mingqiang;Zhang, Yamei;Wu, Xiaoshan;Pan, Fengming;Chen, Xiangcun;Wu, Lihui;Pan, Guoqiang;Gao, Ju;
12:223:6 Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
DOI:10.1016/j.jcrysgro.2012.03.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Li, Zhiwei;Wei, Hongyuan;Xu, Xiaoqing;Zhao, Guijuan;Liu, Xianglin;Yang, Shaoyan;Zhu, Qinsheng;Wang, Zhanguo;
12:223:7 Kinetic versus strain formation of self-organized nanoholes in manganite thin films
DOI:10.1088/0957-4484/21/46/465601 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Konstantinovic, Z.;Santiso, J.;Balcells, Ll;Martinez, B.;
12:223:8 Growth of GaN nanotubes by halide vapor phase epitaxy
DOI:10.1088/0957-4484/22/8/085602 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Hemmingsson, Carl;Pozina, Galia;Khromov, Sergey;Monemar, Bo;
12:223:9 Probing the dead layer thickness and its effect on the structure and magnetic properties in La2/3Ca1/3MnO3 thin films
DOI:10.1016/j.tsf.2013.07.036 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Xie, Q. Y.;Wu, X. S.;Li, J.;Lv, B.;Gao, J.;
12:223:10 Laser-induced Zn doping in GaN based light-emitting diode
DOI:10.1063/1.3367725 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Xue, Zheng-Qun;Huang, Sheng-Rong;Zhang, Bao-Ping;Chen, Chao;
12:223:11 X-ray probe of GaN thin films grown on InGaN compliant substrates
DOI:10.1063/1.4799279 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Xu, Xiaoqing;Li, Yang;Liu, Jianming;Wei, Hongyuan;Liu, Xianglin;Yang, Shaoyan;Wang, Zhanguo;Wang, Huanhua;
12:223:12 Islands as Nanometric Probes of Strain Distribution in Heterogeneous Surfaces
DOI:10.1103/PhysRevLett.104.056102 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:4 AU: Realpe, H.;Peretz, E.;Shamir, N.;Mintz, M. H.;Shneck, R. Z.;Manassen, Y.;
12:223:13 Enhanced physical compatibility in manganite/cuprate multilayer with high-quality interface
DOI:10.1016/j.tsf.2011.03.064 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Xie, Qiyun;Qian, Bin;Wu, Xiaoshan;Zou, Jin;Gao, Ju;
12:224:1 In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.11.122 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:18 AU: Priyantha, W.;Radhakrishnan, G.;Droopad, R.;Passlack, M.;
12:224:2 Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jallcom.2011.07.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Krawczyk, Miroslaw;Lisowski, Wojciech;Sobczak, Janusz W.;Kosinski, Andrzej;Jablonski, Aleksander;Skierbiszewski, Czeslaw;Siekacz, Marcin;Wiazkowska, Sylwia;
12:224:3 Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering
DOI:10.1016/j.apsusc.2012.10.202 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Wang, J.;Shi, X. J.;Zhu, J.;
12:224:4 InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
DOI:10.1063/1.3697415 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Laboutin, O.;Cao, Y.;Johnson, W.;Wang, R.;Li, G.;Jena, D.;Xing, H.;
12:224:5 Impact of surface treatments on high-kappa dielectric integration with Ga-polar and N-polar GaN
DOI:10.1116/1.4831875 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: English, Caroline R.;Wheeler, Virginia D.;Garces, Nelson Y.;Nepal, Neeraj;Nath, Anindya;Hite, Jennifer K.;Mastro, Michael A.;Eddy, Charles R., Jr.;
12:224:6 Studies of the hot-pressed TiN material by electron spectroscopies
DOI:10.1016/j.jallcom.2012.08.089 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Krawczyk, Miroslaw;Lisowski, Wojciech;Sobczak, Janusz W.;Kosinski, Andrzej;Jablonski, Aleksander;
12:224:7 XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers
DOI:10.1016/j.jallcom.2014.02.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Lisowski, Wojciech;Grzanka, Ewa;Sobczak, Janusz W.;Krawczyk, Miroslaw;Jablonski, Aleksander;Czernecki, Robert;Leszczynski, Michal;Suski, Tadeusz;
12:224:8 Study of the pseudo-(1 x 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE
DOI:10.1016/j.jcrysgro.2012.12.172 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Cruz-Hernandez, E.;Ramirez-Lopez, M.;Perez-Caro, M.;Mani-Gonzalez, P. G.;Herrera-Gomez, A.;Yu Gorbatchev, A.;Lopez-Lopez, M.;Mendez-Garcia, V. H.;
12:224:9 Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cells
DOI:10.1016/j.mseb.2011.12.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:6 AU: McLaughlin, Dirk V. P.;Pearce, Joshua M.;
12:224:10 Formation of arsenic sulfide on GaAs surface under illumination in acidified thiourea electrolytes
DOI:10.1016/j.apsusc.2011.08.007 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Khader, Mahmoud M.;AlJaber, Amina S.;
12:224:11 Elastic-peak electron spectroscopy (EPES) studies of ZnO single crystals
DOI:10.1016/j.jallcom.2013.12.140 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Krawczyk, M.;Lisowski, W.;Sobczak, J. W.;Kosinski, A.;Jablonski, A.;
12:225:1 Enhanced light extraction of Bi3Ge4O12 scintillator by graded-refractive-index antireflection coatings
DOI:10.1063/1.4818821 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Tong, Fei;Liu, Bo;Chen, Hong;Zhu, Zhichao;Gu, Mu;
12:225:2 Understanding the role of silicon oxide shell in oxide-assisted SiNWs growth
DOI:10.1016/j.matchemphys.2014.09.036 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Wu, S. Q.;Wang, C. Z.;Zhu, Z. Z.;Ho, K. M.;
12:225:3 Effect of the substrate temperature on zirconium oxynitride thin films deposited by water vapour-nitrogen radiofrequency magnetron sputtering
DOI:10.1016/j.tsf.2009.07.153 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Signore, M. A.;Rizzo, A.;Tapfer, L.;Piscopiello, E.;Capodieci, L.;Cappello, A.;
12:225:4 Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
DOI:10.1063/1.3624838 JN:AIP ADVANCES PY:2011
TC:8 AU: Pignalos, P.;Lee, H.;Qiao, L.;Tseng, M.;Yi, Y.;
12:225:5 Gamma ray irradiated silicon nanowires: An effective model to investigate defects at the interface of Si/SiOx
DOI:10.1063/1.4863310 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Yin, Kui;Zhao, Yi;Xiaoliang, Wang;Liu, Liangbin;Xue, Gi;Lee, Shuit-Tong;Shao, Mingwang;
12:225:6 Scintillation properties of Bi4Ge3O12 down to 3 K under gamma rays
DOI:10.1103/PhysRevB.84.214306 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Verdier, M. -A.;Di Stefano, P. C. F.;Nadeau, P.;Behan, C.;Clavel, M.;Dujardin, C.;
12:225:7 Quasicontinuous refractive index tailoring of SiNx and SiOxNy for broadband antireflective coatings
DOI:10.1063/1.3380825 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Qiu, Weibin;Kang, Young Mo;Goddard, Lynford L.;
12:225:8 Structural and dynamical heterogeneity in molten Si-rich oxides
DOI:10.1063/1.3298555 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Wu, S. Q.;Wang, C. Z.;Zhu, Z. Z.;Ho, K. M.;
12:225:9 Polyamorphism and origin of spatially heterogeneous dynamics in network-forming liquids under compression: Insight from visualization of molecular dynamics data
DOI:10.1063/1.4807134 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hong, N. V.;Lan, M. T.;Nhan, N. T.;Hung, P. K.;
12:225:10 Deposition of silicon nitride thin films by RF magnetron sputtering: a material and growth process study
DOI:10.1016/j.optmat.2011.09.012 JN:OPTICAL MATERIALS PY:2012
TC:7 AU: Signore, M. A.;Sytchkova, A.;Dimaio, D.;Cappello, A.;Rizzo, A.;
12:225:11 Catalyst-free synthesis of silicon nanowires by oxidation and reduction process
DOI:10.1007/s10853-013-7476-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Behura, Sanjay K.;Yang, Qiaoqin;Hirose, Akira;Jani, Omkar;Mukhopadhyay, Indrajit;
12:225:12 Low temperature luminescence and scintillation characteristics of SrWO4 crystal
DOI:10.1016/j.jcrysgro.2014.09.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Jiang, Hua;Rooh, Gul;Kim, H. J.;Lee, J. M.;Lee, Y. J.;Zhang, Wansong;Kim, Sunghwan;
12:225:13 Characterization of bi-phased Zr(2)ON(2)-ZrO(2) coatings deposited by RF magnetron sputtering
DOI:10.1016/j.tsf.2011.09.010 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Rawal, Sushant K.;Chawla, Amit Kumar;Chawla, Vipin;Jayaganthan, R.;Chandra, Ramesh;
12:226:1:1 Improved Light Output Power of GaN-Based Flip-Chip Light-Emitting Diode Through SiO2 Cones
DOI:10.1007/s13391-012-2025-y JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:7 AU: Jung, Se-Yeon;Seong, Tae-Yeon;
12:226:1:2 Electrical Characteristics and Carrier Transport Mechanism for Ti/p-GaN Schottky Diodes
DOI:10.1007/s13391-012-2175-y JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:4 AU: Jang, Seon-Ho;Jang, Ja-Soon;
12:226:1:3 Characteristics of Blue and Ultraviolet Light-Emitting Diodes with Current Density and Temperature
DOI:10.3365/eml.2010.06.051 JN:ELECTRONIC MATERIALS LETTERS PY:2010
TC:15 AU: Cho, Jaehee;Yoon, Euijoon;Park, Yongjo;Ha, Woo Jin;Kim, Jong Kyu;
12:226:1:4 Reduction of Efficiency Droop in GaInN/GaN Light-emitting Diodes with Thick AlGaN Cladding Layers
DOI:10.1007/s13391-011-0780-9 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:11 AU: Mao, An;Cho, Jaehee;Schubert, E. Fred;Son, Joong Kon;Sone, Cheolsoo;Ha, Woo Jin;Hwang, Sunyong;Kim, Jong Kyu;
12:226:1:5 Enhancement of upward thermal dissipation in a 16-Chip LED package using ceramic barrier ribs
DOI:10.1007/s13391-013-3177-0 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Bang, Young-Tae;Moon, Cheol-Hee;
12:226:1:6 Comparison of effect of epoxy and silicone adhesive on the lifetime of plastic LED package
DOI:10.1007/s13391-013-0024-2 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:2 AU: Kim, Jemin;Ma, Byungjin;Lee, Kwanhun;
12:226:1:7 Thermal properties and lifetime comparison of various ceramic-package light-emitting diodes
DOI:10.1007/s13391-013-0030-4 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:2 AU: Ma, Byungjin;Ahn, Yungjun;Kim, Jemin;Choi, Sungsoon;Lee, Kwanhoon;
12:226:2:1 Effect of Substrate Orientation on Critical Thickness of Cu Thin Films
DOI:10.1007/s13391-011-0170-3 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:6 AU: Pang, Na;Chen, Leng;
12:226:2:2 Warpage and stress relaxation of the transferred GaN LED epi-layer on electroplated Cu substrates
DOI:10.1007/s13391-013-0029-x JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:5 AU: Lin, Y. C.;Liu, Y. S.;Chang, C. L.;Liu, C. Y.;
12:226:2:3 Effect of RF Sputtering Power on the adhesion of Ni thin film to polyimide
DOI:10.1007/s13391-011-0270-0 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:2 AU: Woo, Tae-Gyu;Park, Il-Song;Jung, Kwang-Hee;Jeon, Woo-Yong;Seol, Kyeong-Won;
12:226:2:4 The effect of additives and current density on mechanical properties of cathode metal for secondary battery
DOI:10.1007/s13391-013-0039-8 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:2 AU: Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won;
12:226:2:5 Effect of additives on the elongation and surface properties of copper foils
DOI:10.1007/s13391-012-2125-8 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won;
12:226:3:1 Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
DOI:10.1016/j.apsusc.2009.12.054 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Lin, Meng-Hung;Wen, Hua-Chiang;Huang, Chih-Yung;Jeng, Yeau-Ren;Yau, Wei-Hung;Wu, Wen-Fa;Chou, Chang-Pin;
12:226:3:2 Nanoindentation of Laterally Overgrown Epitaxial Gallium Nitride
DOI:10.1007/s13391-012-1074-6 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:7 AU: Martyniuk, M.;Parish, G.;Marchand, H.;Fini, P. T.;DenBaars, S. P.;Faraone, L.;
12:226:3:3 Reduced operating voltage of AlInGaN-based laser diode by using high pressure grown Mg-doped AlGaN/GaN superlattice p-type cladding layer
DOI:10.1007/s13391-013-0021-5 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Lee, Wonseok;Kwak, Joon Seop;
12:226:4:1 On the exact analytical solution of some families of equilibrium critical thickness transcendental equations
DOI:10.1063/1.4902161 JN:AIP ADVANCES PY:2014
TC:0 AU: Perovich, Slavica M.;Calasan, Martin P.;Toskovic, Ranko;
12:226:4:2 An inverse problem of temperature estimation for the combination of the linear and nonlinear resistances
DOI:10.1063/1.3589909 JN:AIP ADVANCES PY:2011
TC:1 AU: Perovich, Slavica M.;Bauk, Sanja I.;
12:226:4:3 Solution for the critical thickness models of dislocation generation in epitaxial thin films using the Lambert W function
DOI:10.1007/s10853-010-5026-y JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:4 AU: Belgacem, Chokri Hadj;Fnaiech, Mustapha;
12:227:1 Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode
DOI:10.1016/j.tsf.2013.01.100 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Peta, Koteswara Rao;Park, Byung-Guon;Lee, Sang-Tae;Kim, Moon-Deock;Oh, Jae-Eung;Kim, Tae-Geun;Reddy, V. Rajagopal;
12:227:2 Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy
DOI:10.1063/1.3453660 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Arehart, A. R.;Homan, T.;Wong, M. H.;Poblenz, C.;Speck, J. S.;Ringel, S. A.;
12:227:3 Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)
DOI:10.1016/j.jcrysgro.2012.12.118 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Peta, Koteswara Rao;Lee, Sang-Tae;Kim, Moon-Deock;Oh, Jae-Eung;Kim, Song-Gang;Kim, Tae-Geun;
12:227:4 Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies
DOI:10.1063/1.3607245 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Rao, Peta Koteswara;Park, Byungguon;Lee, Sang-Tae;Noh, Young-Kyun;Kim, Moon-Deock;Oh, Jae-Eung;
12:227:5 Fast self-heating in GaN-based laser diodes
DOI:10.1063/1.3587810 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Scheibenzuber, W. G.;Schwarz, U. T.;
12:227:6 AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures
DOI:10.1063/1.3421392 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Lee, K. H.;Chang, P. C.;Chang, S. J.;Su, Y. K.;Yu, C. L.;
12:227:7 Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
DOI:10.1116/1.4802964 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Cheze, Caroline;Siekacz, Marcin;Muziol, Grzegorz;Turski, Henryk;Grzanka, Szymon;Krysko, Marcin;Weyher, Jan L.;Bockowski, Michal;Hauswald, Christian;Laehnemann, Jonas;Brandt, Oliver;Albrecht, Martin;Skierbiszewski, Czeslaw;
12:227:8 Antiguiding factor of GaN-based laser diodes from UV to green
DOI:10.1063/1.3464172 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Scheibenzuber, W. G.;Schwarz, U. T.;Lermer, T.;Lutgen, S.;Strauss, U.;
12:227:9 Gallium vacancies related yellow luminescence in N-face GaN epitaxial film
DOI:10.1016/j.apsusc.2012.03.059 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Xu, Huayong;Hu, Xiaobo;Xu, Xiangang;Shen, Yan;Qu, Shuang;Wang, Chengxin;Li, Shuqiang;
12:227:10 Correlation between measured voltage and observed wavelength in commercial AlGaInP laser diode
DOI:10.1063/1.4876747 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Iskrenovic, Predrag S.;Krstic, Ivan B.;Obradovic, Bratislav M.;Kuraica, Milorad M.;
12:228:1 Microscopic measurements of variations in local (photo)electronic properties in nanostructured solar cells
DOI:10.1016/j.solmat.2013.07.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:3 AU: Fejfar, Antonin;Hyvl, Matej;Ledinsky, Martin;Vetushka, Aliaksei;Stuchlik, Jiri;Kocka, Jan;Misra, Soumyadeep;O'Donnell, Benedict;Foldyna, Martin;Yu, Linwei;Roca i Cabarrocas, Pere;
12:228:2 Conductive atomic force microscopy on carbon nanowalls
DOI:10.1016/j.jnoncrysol.2011.12.094 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:6 AU: Vetushka, A.;Itoh, T.;Nakanishi, Y.;Fejfar, A.;Nonomura, S.;Ledinsky, M.;Kocka, J.;
12:228:3 The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
DOI:10.1088/0957-4484/21/41/415604 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Cervenka, J.;Ledinsky, M.;Stuchlik, J.;Stuchlikova, H.;Bakardjieva, S.;Hruska, K.;Fejfar, A.;Kocka, J.;
12:228:4 The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition
DOI:10.1016/j.matlet.2011.01.033 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Qin, Yanli;Li, Fei;Liu, Dequan;Yan, Hengqing;Wang, Jinxiao;He, Deyan;
12:228:5 Self-assembled isolated monodisperse NiO1+gamma nanoparticles as catalytic templates for nanomaterials synthesis
DOI:10.1016/j.matchemphys.2012.03.084 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Houweling, Z. Silvester;Geus, John W.;Harks, Peter-Paul R. M. L.;Heller, Rene;Schropp, Ruud E. I.;
12:228:6 The electrical conductivity of hydrogenated nanocrystalline silicon investigated at the nanoscale
DOI:10.1088/0957-4484/21/4/045702 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Cavalcoli, Daniela;Detto, Francesca;Rossi, Marco;Tomasi, Andrea;Cavallini, Anna;
12:228:7 Electrical tip-sample contact in scanning conductive torsion mode
DOI:10.1063/1.4802725 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Weber, Stefan A. L.;Berger, Ruediger;
12:228:8 Electrical and photovoltaic properties of self-assembled Ge nanodomes on Si(001)
DOI:10.1103/PhysRevB.86.245320 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;
12:228:9 Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy
DOI:10.1016/j.jnoncrysol.2012.01.015 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Ledinsky, Martin;Fejfar, Antonin;Vetushka, Aliaksei;Stuchlik, Jiri;Kocka, Jan;
12:228:10 Electrical properties of carbon nanowall films
DOI:10.1016/j.jnoncrysol.2012.01.062 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Itoh, Takashi;Nakanishi, Yosuke;Ito, Takanori;Vetushka, Aliaksei;Ledinsky, Martin;Fejfar, Antonin;Kocka, Jan;Nonomura, Shuichi;
12:228:11 Gold Seed Removal from the Tips of Silicon Nanorods
DOI:10.1021/nl903235e JN:NANO LETTERS PY:2010
TC:10 AU: Hessel, Colin M.;Heitsch, Andrew T.;Korgel, Brian A.;
12:228:12 Synthesis of carbon nanowalls by hot-wire chemical vapor deposition
DOI:10.1016/j.tsf.2011.01.308 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Itoh, Takashi;
12:229:1 Modelling of hot carrier solar cell absorbers
DOI:10.1016/j.solmat.2010.01.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:24 AU: Conibeer, Gavin;Patterson, Robert;Huang, Lunmei;Guillernoles, Jean-Francois;Konig, Dirk;Shrestha, Santosh;Green, Martin A.;
12:229:2 Net electron-phonon scattering rates in InN/GaN multiple quantum wells: The effects of an energy dependent acoustic deformation potential
DOI:10.1063/1.4893158 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xia, H.;Patterson, R.;Feng, Y.;Shrestha, S.;Conibeer, G.;
12:229:3 On momentum conservation and thermionic emission cooling
DOI:10.1063/1.3295899 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Kim, Raseong;Jeong, Changwook;Lundstrom, Mark S.;
12:229:4 Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy
DOI:10.1063/1.3360199 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Lin, Wei;Li, Shuping;Kang, Junyong;
12:229:5 Theoretical calculation of the vibrational and thermal properties of wurtzite InN-GaN multiple quantum well superlattice
DOI:10.1063/1.4802683 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Xia, H.;Feng, Y.;Patterson, R.;Jia, X.;Shrestha, S.;Conibeer, G.;
12:229:6 Room temperature fabrication of silicon nanocrystals by pulsed laser deposition
DOI:10.1007/s11051-014-2461-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:5 AU: Biserni, Erika;Scarpellini, Alice;Brescia, Rosaria;Dellasega, David;Li Bassi, Andrea;Bruno, Paola;
12:229:7 Heterobarrier for converting hot-phonon energy to electric potential
DOI:10.1103/PhysRevB.87.075317 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Shin, Seungha;Melnick, Corey;Kaviany, Massoud;
12:229:8 Pulsed-laser fabrication of gas-filled hollow Co-Pt nanospheres
DOI:10.1016/j.actamat.2013.09.033 JN:ACTA MATERIALIA PY:2013
TC:1 AU: Sturm, S.;Rozman, K. Z.;Markoli, B.;Antonakakis, N. S.;Sarantopoulou, E.;Kollia, Z.;Cefalas, A. C.;Kobe, S.;
12:229:9 Entropy production in hot-phonon energy conversion to electric potential
DOI:10.1063/1.4819217 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Shin, Seungha;Kaviany, Massoud;
12:229:10 Formation of core-shell and hollow nanospheres through the nanoscale melt-solidification effect in the Sm-Fe(Ta)-N system
DOI:10.1088/0957-4484/21/48/485603 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Sturm, S.;Rozman, K. Zuzek;Markoli, B.;Sarantopoulou, E.;Kollia, Z.;Cefalas, A. C.;Kobe, S.;
12:229:11 Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
DOI:10.1063/1.3660697 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Paul, Abhijeet;Tettamanzi, Giuseppe C.;Lee, Sunhee;Mehrotra, Saumitra R.;Collaert, Nadine;Biesemans, Serge;Rogge, Sven;Klimeck, Gerhard;
12:230:1 Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells
DOI:10.1016/j.solmat.2012.02.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:22 AU: Diedenhofen, Silke L.;Grzela, Grzegorz;Haverkamp, Erik;Bauhuis, Gerard;Schermer, J. J.;Rivas, Jaime Gomez;
12:230:2 Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using Multiple-Discrete-Layer Tailored- and Low-Refractive Index Anti-Reflection Coatings
DOI:10.1002/adfm.201201032 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:24 AU: Yan, Xing;Poxson, David J.;Cho, Jaehee;Welser, Roger E.;Sood, Ashok K.;Kim, Jong Kyu;Schubert, E. Fred;
12:230:3 Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography
DOI:10.1016/j.solmat.2010.05.053 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:36 AU: Tommila, J.;Polojarvi, V.;Aho, A.;Tukiainen, A.;Viheriala, J.;Salmi, J.;Schramm, A.;Kontio, J. M.;Turtiainen, A.;Niemi, T.;Guina, M.;
12:230:4 Disordered submicron structures integrated on glass substrate for broadband absorption enhancement of thin-film solar cells
DOI:10.1016/j.solmat.2012.02.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:11 AU: Song, Young Min;Jang, Ji Hoon;Lee, Jeong Chul;Kang, Eun Kyu;Lee, Yong Tak;
12:230:5 Effects of thickness on the structural, electronic, and optical properties of MgF2 thin films: The first-principles study
DOI:10.1016/j.commatsci.2013.04.031 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:1 AU: Wang, Li-ping;Han, Pei-de;Zhang, Zhu-xia;Zhang, Cai-li;Xu, Bing-she;
12:230:6 Characterization of stacked sol-gel films: Comparison of results derived from scanning electron microscopy, UV-vis spectroscopy and ellipsometric porosimetry
DOI:10.1016/j.tsf.2011.09.021 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Bittner, Andreas;Schmitt, Angelika;Jahn, Rainer;Loebmann, Peer;
12:230:7 Simulation and fabrication of SiO2/graded-indexTiO(2) anti reflection coating for triple-junction GaAs solar cells by using the hybrid deposition process
DOI:10.1016/j.tsf.2014.05.024 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Liu, Jheng-Jie;Ho, Wen-Jeng;Lee, Yi-Yu;Chang, Chia-Ming;
12:230:8 Electrically conductive thin-film color filters made of single-material indium-tin-oxide
DOI:10.1063/1.3592222 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Yan, Xing;Mont, Frank W.;Poxson, David J.;Cho, Jaehee;Schubert, E. Fred;Kim, Min-Ho;Sone, Cheolsoo;
12:230:9 Superconductivity of p-type diamond (001) and (111) thin films: Ab initio calculations
DOI:10.1016/j.tsf.2010.03.070 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Yan, Yan;Gong, Jie;Zong, Zhanguo;
12:230:10 Dependence of optical and structural properties of ZnS and MgF2 multilayers as a function of the number of layers
DOI:10.1016/j.tsf.2009.12.080 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Perales, F.;Soto, D.;de las Heras, C.;
12:231:1 Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon wafer
DOI:10.1016/j.apsusc.2012.12.001 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Huang, Bohr-Ran;Yang, Ying-Kan;Yang, Wen-Luh;
12:231:2 The effect of texture unit shape on silicon surface on the absorption properties
DOI:10.1016/j.solmat.2009.09.011 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:26 AU: Hua, Xiao-She;Zhang, Yi-Jie;Wang, Hao-Wei;
12:231:3 Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask
DOI:10.1016/j.solmat.2010.06.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:16 AU: Kim, Jeehwan;Inns, Daniel;Fogel, Keith;Sadana, Devendra K.;
12:231:4 Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching
DOI:10.1063/1.4776733 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Sridharan, Sindhuja;Bhat, Navakanta;Bhat, K. N.;
12:231:5 Formation of Various Pyramidal Structures on Monocrystalline Silicon Surface and Their Influence on the Solar Cells
DOI:10.1155/2013/716012 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Han, Yangang;Yu, Xuegong;Wang, Dong;Yang, Deren;
12:231:6 Metal grids-based texturization of monocrystalline silicon wafers for solar cells
DOI:10.1016/j.solmat.2009.12.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:10 AU: Li, Honghao;Liu, Weifeng;Liu, Aimin;Qiao, Fen;Hu, Zengquan;Liu, Yiting;
12:231:7 TMAH-textured, a-Si/c-Si, heterojunction solar cells with 10% reflectance
DOI:10.1016/j.solmat.2011.06.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Rosa, M.;Allegrezza, M.;Canino, M.;Summonte, C.;Desalvo, A.;
12:231:8 Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells
DOI:10.1063/1.4905013 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Lee, Youngseok;Kim, Heewon;Iftiquar, S. M.;Kim, Sunbo;Kim, Sangho;Ahn, Shihyun;Lee, Youn-Jung;Dao, Vinh Ai;Yi, Junsin;
12:231:9 Enhanced carrier extraction of a-Si/c-Si solar cells by nanopillar-induced optical modulation
DOI:10.1088/0957-4484/25/13/135202 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Zeng, Yang;Liu, Hong;Ye, Qinghao;Shen, Wenzhong;
12:231:10 Insights gained from computer modeling of heterojunction with instrinsic thin layer "HIT" solar cells
DOI:10.1016/j.solmat.2010.04.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:15 AU: Datta, A.;Rahmouni, M.;Nath, M.;Boubekri, R.;Cabarrocas, P. Roca i;Chatterjee, P.;
12:231:11 Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells
DOI:10.1063/1.3650255 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Pysch, Damian;Meinhard, Christoph;Harder, Nils-Peter;Hermle, Martin;Glunz, Stefan W.;
12:231:12 Texturization of Si(100) substrates using tensioactive compounds
DOI:10.1016/j.apsusc.2012.05.164 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Zubel, Irena;Granek, Filip;Rola, Krzysztof;Banaszczyk, Katarzyna;
12:231:13 UV laser direct texturing for high efficiency multicrystalline silicon solar cell
DOI:10.1016/j.apsusc.2012.10.035 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Kim, Kwang-Ryul;Kim, Tae-Hoon;Park, Hyun-Ae;Kim, Sun-Yong;Cho, Sung-Hak;Yi, Junsin;Choi, Byoung-Deog;
12:231:14 Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate
DOI:10.1016/j.jcrysgro.2011.01.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Kang, Min Gu;Tark, S.;Lee, Jeong Chul;Son, Chang-Sik;Kim, Donghwan;
12:232:1 Ab initio study of lattice vibration and polaron properties in zinc-blende AlxGa1-xN alloys
DOI:10.1063/1.3517065 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Bouarissa, N.;Saib, S.;
12:232:2 Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy
DOI:10.1063/1.3493115 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Zhang, L.;Cheng, K.;Degroote, S.;Leys, M.;Germain, M.;Borghs, G.;
12:232:3 Thermal expansions in wurtzite AlN, GaN, and InN: First-principle phonon calculations
DOI:10.1063/1.3627237 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Xu, Li-Chun;Wang, Ru-Zhi;Yang, Xiaodong;Yan, Hui;
12:232:4 Elastic modulus and thermal properties of InN in the rocksalt phase
DOI:10.1016/j.commatsci.2013.08.045 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Saib, S.;Bouarissa, N.;Rodriguez-Hernandez, P.;Munoz, A.;
12:232:5 High pressure equation of state and ideal compressive and tensile strength of MgO single crystal: Ab-initio calculations
DOI:10.1063/1.4811232 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Mukherjee, D.;Joshi, K. D.;Gupta, Satish C.;
12:232:6 Size-Dependent Elastic Modulus and Vibration Frequency of Nanocrystals
DOI:10.1155/2011/670857 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:10 AU: Liang, Lihong;Ma, Hansong;Wei, Yueguang;
12:232:7 Structural and vibrational study of the negative thermal expansion in liquid As2Te3
DOI:10.1103/PhysRevB.82.054202 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Otjacques, Celine;Raty, Jean-Yves;Hippert, Francoise;Schober, Helmut;Johnson, Mark;Ceolin, Rene;Gaspard, Jean-Pierre;
12:232:8 Pressure dependence of elastic constants and related parameters for rocksalt MgO
DOI:10.1016/j.commatsci.2010.02.010 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:4 AU: Gueddim, A.;Bouarissa, N.;Villesuzanne, A.;
12:232:9 Elastic properties and lattice vibration modes in ZnTe1-xOx
DOI:10.1016/j.commatsci.2013.10.028 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Bouarissa, N.;Siddiqui, S. A.;Hajry, A.;Saib, S.;Boucenna, M.;
12:232:10 Ab initio study of lattice vibration and polaron properties in zinc-blende AlxGa1-xN alloys (vol 108, 113710, 2010)
DOI:10.1063/1.3695450 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Bouarissa, N.;Saib, S.;
12:232:11 Phonon Confinement in Nanostructured InP
DOI:10.1166/jctn.2013.2844 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:2 AU: Bouarissa, Nadir;
12:232:12 Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate
DOI:10.1063/1.3653831 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Zhang, Liyang;Cheng, Kai;Leys, M.;Favia, P.;Bender, H.;Borghs, G.;
12:232:13 Electronic structure and lattice dynamics of CaxMg1-xS in the rock-salt phase
DOI:10.1016/j.mssp.2013.10.029 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Ghebouli, M. A.;Choutri, H.;Bouarissa, N.;
12:232:14 Temperature effect on elastic modulus of thin films and nanocrystals
DOI:10.1080/14786435.2012.725950 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:1 AU: Liang, Lihong;Li, Meizhi;Qin, Fuqi;Wei, Yueguang;
12:233:1 ZnSe-Based Longitudinal Twinning Nanowires
DOI:10.1002/adem.201300405 JN:ADVANCED ENGINEERING MATERIALS PY:2014
TC:2 AU: Xu, Jing;Lu, Aijiang;Wang, Chunrui;Zou, Rujia;Liu, Xiaoyun;Wu, Xing;Wang, Yuxi;Li, Sijia;Sun, Litao;Chen, Xiaoshuang;Oh, Hongseok;Baek, Hyeonjun;Yi, Gyu-Chul;Chu, Junhao;
12:233:2 One-pot synthesis of ultranarrow single crystal ZnSe nanowires
DOI:10.1016/j.matlet.2011.09.082 JN:MATERIALS LETTERS PY:2012
TC:12 AU: Wei, Hao;Su, Yanjie;Chen, Shangzhi;Liu, Ying;Lin, Yang;Zhang, Yafei;
12:233:3 Twinning effect on photoluminescence spectra of ZnSe nanowires
DOI:10.1063/1.4900850 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Xu, Jing;Wang, Chunrui;Wu, Binhe;Xu, Xiaofeng;Chen, Xiaoshuang;Oh, Hongseok;Baek, Hyeonjun;Yi, Gyu-Chul;
12:233:4 Controllable introduction of twin boundaries into nanowires
DOI:10.1063/1.3511366 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Zhang, Yongfeng;Huang, Hanchen;
12:233:5 "One-pot" synthesis and shape control of ZnSe semiconductor nanocrystals in liquid paraffin
DOI:10.1039/c0jm00115e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:11 AU: Liu, Yi;Tang, Yue;Ning, Yang;Li, Minjie;Zhang, Hao;Yang, Bai;
12:233:6 Band gap prediction for composition-tunable alloyed semiconductor nanocrystals
DOI:10.1063/1.4816972 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Gao, Lihua;Gao, Faming;
12:233:7 SIMS and Raman characterizations of ZnO:N thin films grown by MOCVD
DOI:10.1016/j.jcrysgro.2010.07.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Marzouki, A.;Lusson, A.;Jomard, F.;Sayari, A.;Galtier, P.;Oueslati, M.;Sallet, V.;
12:233:8 Effects of quantum confinement and shape on band gap of core/shell quantum dots and nanowires
DOI:10.1063/1.3590253 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Gao, Faming;
12:233:9 Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure
DOI:10.1088/0957-4484/24/10/105701 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Saxena, Ankur;Pan, Qi;Ruda, Harry E.;
12:233:10 Effects of the experimental conditions on the growth of crystalline ZnSe nano-needles by pulsed laser deposition
DOI:10.1007/s00339-010-5941-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:4 AU: Lai, J. S.;Chen, L.;Fu, X. N.;Sun, J.;Ying, Z. F.;Wu, J. D.;Xu, N.;
12:233:11 Facile and large-scale synthesis of water-soluble Fe:ZnSe semiconductor nanocrystals
DOI:10.1016/j.matlet.2013.02.093 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Xie, Ruishi;Zhang, Xingquan;Liu, Haifeng;Sun, Hongjuan;
12:234:1 Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
DOI:10.1063/1.3496624 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Magalhaes, S.;Peres, M.;Fellmann, V.;Daudin, B.;Neves, A. J.;Alves, E.;Monteiro, T.;Lorenz, K.;
12:234:2 Mechanisms of damage formation in Eu-implanted AlN
DOI:10.1063/1.4758311 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Leclerc, S.;Lacroix, B.;Declemy, A.;Lorenz, K.;Ruterana, P.;
12:234:3 Rare earth co-doping nitride layers for visible light
DOI:10.1016/j.matchemphys.2012.03.056 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: Rodrigues, J.;Miranda, S. M. C.;Santos, N. F.;Neves, A. J.;Alves, E.;Lorenz, K.;Monteiro, T.;
12:234:4 Optical doping and damage formation in AlN by Eu implantation
DOI:10.1063/1.3291100 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Lorenz, K.;Alves, E.;Gloux, F.;Ruterana, P.;Peres, M.;Neves, A. J.;Monteiro, T.;
12:234:5 Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures
DOI:10.1088/0957-4484/24/50/505717 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Redondo-Cubero, A.;Lorenz, K.;Wendler, E.;Carvalho, D.;Ben, T.;Morales, F. M.;Garcia, R.;Fellmann, V.;Daudin, B.;
12:234:6 The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD
DOI:10.1016/j.optmat.2010.10.025 JN:OPTICAL MATERIALS PY:2011
TC:5 AU: Peres, M.;Magalhaes, S.;Rodrigues, J.;Soares, M. J.;Fellmann, V.;Neves, A. J.;Alves, E.;Daudin, B.;Lorenz, K.;Monteiro, T.;
12:234:7 A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
DOI:10.1063/1.3527944 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Ruterana, P.;Lacroix, B.;Lorenz, K.;
12:234:8 Effect of In implantation and annealing on the lattice disorder and nano-mechanical properties of GaN
DOI:10.1016/j.tsf.2013.01.061 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Filintoglou, K.;Kavouras, P.;Katsikini, M.;Arvanitidis, J.;Christofilos, D.;Ves, S.;Wendler, E.;Wesch, W.;
12:234:9 Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation
DOI:10.1063/1.3506420 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Gunji, Marika;Marshall, Ann F.;McIntyre, Paul C.;
12:234:10 Comparison of Fe and Si doping of GaN: An EXAFS and Raman study
DOI:10.1016/j.mseb.2011.02.028 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:3 AU: Katsikini, M.;Pinakidou, F.;Arvanitidis, J.;Paloura, E. C.;Ves, S.;Komninou, Ph;Bougrioua, Z.;Iliopoulos, E.;Moustakas, T. D.;
12:234:11 Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature
DOI:10.1016/j.optmat.2010.09.005 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: Soares, M. J.;Leitao, J. P.;da Silva, M. I. N.;Gonzalez, J. C.;Matinaga, F. M.;Lorenz, K.;Alves, E.;Peres, M.;Monteiro, T.;
12:235:1 Processing and properties of centimeter-long, in-fiber, crystalline-selenium filaments
DOI:10.1063/1.3275751 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Deng, D. S.;Orf, N. D.;Danto, S.;Abouraddy, A. F.;Joannopoulos, J. D.;Fink, Y.;
12:235:2 Arrays of indefinitely long uniform nanowires and nanotubes
DOI:10.1038/NMAT3038 JN:NATURE MATERIALS PY:2011
TC:43 AU: Yaman, Mecit;Khudiyev, Tural;Ozgur, Erol;Kanik, Mehmet;Aktas, Ozan;Ozgur, Ekin O.;Deniz, Hakan;Korkut, Enes;Bayindir, Mehmet;
12:235:3 All-in-Fiber Chemical Sensing
DOI:10.1002/adma.201203053 JN:ADVANCED MATERIALS PY:2012
TC:13 AU: Gumennik, Alexander;Stolyarov, Alexander M.;Schell, Brent R.;Hou, Chong;Lestoquoy, Guillaume;Sorin, Fabien;McDaniel, William;Rose, Aimee;Joannopoulos, John D.;Fink, Yoel;
12:235:4 Ovonic Memory Switching in Multimaterial Fibers
DOI:10.1002/adfm.201002252 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:6 AU: Danto, Sylvain;Ruff, Zachary;Wang, Zheng;Joannopoulos, John D.;Fink, Yoel;
12:235:5 Thermal Drawing of High-Density Macroscopic Arrays of Well-Ordered Sub-5-nm-Diameter Nanowires
DOI:10.1021/nl202583g JN:NANO LETTERS PY:2011
TC:17 AU: Kaufman, Joshua J.;Tao, Guangming;Shabahang, Soroush;Deng, Daosheng S.;Fink, Yoel;Abouraddy, Ayman F.;
12:235:6 Direct Atomic-Level Observation and Chemical Analysis of ZnSe Synthesized by in Situ High-Throughput Reactive Fiber Drawing
DOI:10.1021/nl304023z JN:NANO LETTERS PY:2013
TC:3 AU: Hou, Chong;Jia, Xiaoting;Wei, Lei;Stolyarov, Alexander M.;Shapira, Ofer;Joannopoulos, John D.;Fink, Yoel;
12:235:7 Fiber Field-Effect Device Via In Situ Channel Crystallization
DOI:10.1002/adma.201000268 JN:ADVANCED MATERIALS PY:2010
TC:12 AU: Danto, Sylvain;Sorin, Fabien;Orf, Nicholas D.;Wang, Zheng;Speakman, Scott A.;Joannopoulos, John D.;Fink, Yoel;
12:235:8 Exceptional integration of metal or semimetal nanowires in human-hair-like glass fiber
DOI:10.1016/j.matlet.2010.06.002 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Badinter, E.;Ioisher, A.;Monaico, E.;Postolache, V.;Tiginyanu, I. M.;
12:235:9 Observation of the Plateau-Rayleigh capillary instability in multi-material optical fibers
DOI:10.1063/1.3653247 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Shabahang, S.;Kaufman, J. J.;Deng, D. S.;Abouraddy, A. F.;
12:235:10 Polymer Fiber Probes Enable Optical Control of Spinal Cord and Muscle Function In Vivo
DOI:10.1002/adfm.201401266 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Lu, Chi;Froriep, Ulrich P.;Koppes, Ryan A.;Canales, Andres;Caggiano, Vittorio;Selvidge, Jennifer;Bizzi, Emilio;Anikeeva, Polina;
12:235:11 Multimaterial disc-to-fiber approach to efficiently produce robust infrared fibers
DOI:10.1364/OME.4.002143 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:3 AU: Tao, Guangming;Shabahang, Soroush;Dai, Shixun;Abouraddy, Ayman F.;
12:236:1:1 Determining phonon deformation potentials of hexagonal GaN with stress modulation
DOI:10.1063/1.3524548 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Lu, Jun-Yong;Wang, Zhi-Jia;Deng, Dong-Mei;Wang, Yong;Chen, Kevin Jing;Lau, Kei-May;Zhang, Tong-Yi;
12:236:1:2 Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films
DOI:10.1063/1.3670338 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Kim, Jung Gon;Kimura, Atsuhito;Kamei, Yasuhito;Hasuike, Noriyuki;Harima, Hiroshi;Kisoda, Kenji;Shimahara, Yuki;Miyake, Hideto;Hiramatsu, Kazumasa;
12:236:1:3 Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
DOI:10.1063/1.3626532 JN:AIP ADVANCES PY:2011
TC:1 AU: Lu, Jun-Yong;Deng, Dong-Mei;Wang, Yong;Chen, Kevin Jing;Lau, Kei-May;Zhang, Tong-Yi;
12:236:1:4 Determination of Al molar fraction in AlxGa1-xN films by Raman scattering
DOI:10.1063/1.3610525 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Kim, J. G.;Kimura, A.;Kamei, Y.;Hasuike, N.;Harima, H.;Kisoda, K.;Simahara, Y.;Miyake, H.;Hiramatsu, K.;
12:236:1:5 Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films (vol 99, 251904, 2011)
DOI:10.1063/1.3698456 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Kim, Jung Gon;Kimura, Atsuhito;Kamei, Yasuhito;Hasuike, Noriyuki;Harima, Hiroshi;Kisoda, Kenji;Shimahara, Yuki;Miyake, Hideto;Hiramatsu, Kazumasa;
12:236:2:1 InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
DOI:10.1063/1.3427438 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Deng, Dongmei;Yu, Naisen;Wang, Yong;Zou, Xinbo;Kuo, Hao-Chung;Chen, Peng;Lau, Kei May;
12:236:2:2 Size-dependent adhesion of nanopatterns for nanoimprint applications
DOI:10.1007/s13391-013-6027-1 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Kim, Kwang-Seop;Kim, Ki-Don;Jeong, Jun-Ho;Lee, Hak-Joo;Kim, Jae-Hyun;
12:236:2:3 Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates
DOI:10.1016/j.jcrysgro.2010.09.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Ishikawa, Hiroyasu;Shimanaka, Keita;
12:236:2:4 Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
DOI:10.1016/j.jcrysgro.2010.09.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Deng, Dongmei;Chiu, Ching-Hsueh;Kuo, Hao-Chung;Chen, Peng;Lau, Kei May;
12:236:3:1 Growth and Mechanism of Network-Like Branched Si3N4 Nanostructures
DOI:10.1111/j.1551-2916.2010.03737.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:9 AU: Peng, Zhijian;Zhu, Na;Fu, Xiuli;Wang, Chengbiao;Fu, Zhiqiang;Qi, Longhao;Miao, Hezhuo;
12:236:3:2 Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition
DOI:10.1016/j.matlet.2012.02.061 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Park, Jinsub;Moon, Dae Young;Kim, Min Hwa;Park, Sung Hyun;Yoon, Euijoon;
12:236:3:3 One-Step Synthesis and Characterization of Silica Nano-/Submicron Spheres by Catalyst-Assisted Pyrolysis of a Preceramic Polymer
DOI:10.1155/2013/843570 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Gao, Feng;Peng, Zhijian;Fu, Xiuli;
12:236:4:1 A simple method to synthesize alpha-Si3N4, beta-SiC and SiO2 nanowires by carbothermal route
DOI:10.1016/j.jcrysgro.2010.03.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Wang, Qiushi;Cong, Ridong;Li, Min;Zhang, Jian;Cui, Qiliang;
12:236:4:2 Room and low temperature photoluminescence properties of single crystalline alpha-Si3N4 nanowires
DOI:10.1016/j.matlet.2012.06.062 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Du, Hongli;Gao, Aifang;
12:236:4:3 Effects of growth parameters on the yield and morphology of Si3N4 microcoils prepared by chemical vapor deposition
DOI:10.1016/j.materresbull.2013.09.023 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Du, Hongli;Zhang, Wei;Li, Yan;
12:236:4:4 Epitaxial growth of asymmetric alpha-silicon nitride nanocombs
DOI:10.1016/j.materresbull.2010.03.026 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:5 AU: Wang, Qiushi;Cui, Qiliang;Zhu, Pinwen;Jin, Yinxia;Hao, Jian;Zhang, Jian;
12:237:1 Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
DOI:10.1063/1.3449576 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Chen, Rui;Sun, H. D.;Wang, T.;Hui, K. N.;Choi, H. W.;
12:237:2 Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks
DOI:10.1063/1.4768950 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Lin, Da-Wei;Lee, Chia-Yu;Liu, Che-Yu;Han, Hau-Vei;Lan, Yu-Pin;Lin, Chien-Chung;Chi, Gou-Chung;Kuo, Hao-Chung;
12:237:3 High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks
DOI:10.1088/0957-4484/23/4/045303 JN:NANOTECHNOLOGY PY:2012
TC:15 AU: Chiu, Ching-Hsueh;Lin, Chien-Chung;Han, Hau-Vei;Liu, Che-Yu;Chen, Yan-Hao;Lan, Yu-Pin;Yu, Peichen;Kuo, Hao-Chung;Lu, Tien-Chang;Wang, Shing-Chung;Chang, Chun-Yen;
12:237:4 Embedded voids approach for low defect density in epitaxial GaN films
DOI:10.1063/1.3540680 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Frajtag, P.;El-Masry, N. A.;Nepal, N.;Bedair, S. M.;
12:237:5 Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars
DOI:10.1063/1.3570634 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Lo, M. -H.;Cheng, Y. -J.;Kuo, H. -C.;Wang, S. -C.;
12:237:6 Optically pumped whispering-gallery mode lasing from 2-mu m GaN micro-disks pivoted on Si
DOI:10.1063/1.4881183 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Yiyun;Ma, Zetao;Zhang, Xuhui;Wang, T.;Choi, H. W.;
12:237:7 Overgrowth of GaN on GaN nanowires produced by mask-less etching
DOI:10.1016/j.jcrysgro.2011.12.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Frajtag, P.;Hosalli, A. M.;Samberg, J. P.;Colter, P. C.;Paskova, T.;El-Masry, N. A.;Bedair, S. M.;
12:237:8 Suspended HfO photonic crystal slab on III-nitride/Si platform
DOI:10.1007/s00339-013-8052-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Wang, Yongjin;Feng, Jiao;Cao, Ziping;Zhu, Hongbo;
12:237:9 Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires
DOI:10.1063/1.3572032 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Frajtag, P.;Hosalli, A. M.;Bradshaw, G. K.;Nepal, N.;El-Masry, N. A.;Bedair, S. M.;
12:237:10 Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films
DOI:10.1016/j.jcrysgro.2011.02.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Frajtag, P.;Samberg, J. P.;El-Masry, N. A.;Nepal, N.;Bedair, S. M.;
12:237:11 Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells
DOI:10.1063/1.3653960 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Pan, S. W.;Zhou, B.;Chen, Rui;Chen, S. Y.;Li, Cheng;Huang, Wei;Lai, H. K.;Sun, H. D.;
12:238:1 Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping
DOI:10.1021/am5031165 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Kim, Su Jin;Kim, Kyeong Heon;Chung, Ho Young;Shin, Hee Woong;Lee, Byeong Ryong;Jeong, Tak;Park, Hyung Jo;Kim, Tae Geun;
12:238:2 Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
DOI:10.1016/j.apsusc.2011.04.118 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Shi, K.;Liu, X. L.;Li, D. B.;Wang, J.;Song, H. P.;Xu, X. Q.;Wei, H. Y.;Jiao, C. M.;Yang, S. Y.;Song, H.;Zhu, Q. S.;Wang, Z. G.;
12:238:3 Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition
DOI:10.1016/j.apsusc.2014.08.137 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Ajimsha, R. S.;Das, Amit K.;Joshi, M. P.;Kukreja, L. M.;
12:238:4 Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
DOI:10.1063/1.4803130 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Perez-Tomas, A.;Fontsere, A.;Llobet, J.;Placidi, M.;Rennesson, S.;Baron, N.;Chenot, S.;Moreno, J. C.;Cordier, Y.;
12:238:5 Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study
DOI:10.1063/1.4897166 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kapilashrami, M.;Conti, G.;Zegkinoglou, I.;Nemsak, S.;Conlon, C. S.;Torndahl, T.;Fjallstrom, V.;Lischner, J.;Louie, Steven G.;Hamers, R. J.;Zhang, L.;Guo, J. -H.;Fadley, C. S.;Himpsel, F. J.;
12:238:6 Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition
DOI:10.1063/1.4794099 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Zhang, Wei;Zhang, Jianbao;Wu, Zhihao;Chen, Shengchang;Li, Yang;Tian, Yu;Dai, Jiangnan;Chen, Changqing;Fang, Yanyan;
12:238:7 Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.01.061 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Borysiuk, J.;Sobczak, K.;Wierzbicka, A.;Jezierska, E.;Klosek, K.;Sobanska, M.;Zytkiewicz, Z. R.;Lucznik, B.;
12:238:8 Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN
DOI:10.1016/j.matchemphys.2011.08.026 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Reddy, N. Nanda Kumar;Reddy, V. Rajagopal;Choi, Chel-Jong;
12:238:9 Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs
DOI:10.1016/j.mseb.2010.07.030 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:4 AU: Tian, Pengfei;Chen, Zhizhong;Sun, Yongjian;Qi, Shengli;Zhang, Huizhen;Deng, Junjing;Yu, Feng;Yu, Tongjun;Kang, Xiangning;Qin, Zhixin;Zhang, Guoyi;
12:238:10 Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes
DOI:10.1016/j.optmat.2012.02.018 JN:OPTICAL MATERIALS PY:2012
TC:8 AU: Liu, Wen-Jie;Hu, Xiao-Long;Zhang, Jiang-Yong;Weng, Guo-En;Lv, Xue-Qin;Huang, Hui-Jun;Chen, Ming;Cai, Xiao-Mei;Ying, Lei-Ying;Zhang, Bao-Ping;
12:238:11 Effects of oxygen thermal annealing treatment on formation of ohmic contacts to n-GaN
DOI:10.1063/1.4769965 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Hou, Wenting;Detchprohm, Theeradetch;Wetzel, Christian;
12:238:12 Electronic structure of boron doped diamond: An x-ray spectroscopic study
DOI:10.1063/1.4802814 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Glans, P. -A.;Learmonth, T.;Smith, K. E.;Ferro, S.;De Battisti, A.;Mattesini, M.;Ahuja, R.;Guo, J. -H.;
12:238:13 Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN
DOI:10.1016/j.jallcom.2011.11.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Yan, Liang-Jyi;Kuo, Cheng Huang;Sheu, Jinn-Kong;Lee, Ming-Lun;Tseng, Wei-Chun;
12:239:1 Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures
DOI:10.1021/nl101999p JN:NANO LETTERS PY:2010
TC:58 AU: Yang, Shenyuan;Prendergast, David;Neaton, Jeffrey B.;
12:239:2 Nonlinear variations in the electronic structure of II-VI and III-V wurtzite semiconductors with biaxial strain
DOI:10.1063/1.3578193 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Yang, Shenyuan;Prendergast, David;Neaton, Jeffrey B.;
12:239:3 Tuning Semiconductor Band Edge Energies for Solar Photocatalysis via Surface Ligand Passivation
DOI:10.1021/nl203669k JN:NANO LETTERS PY:2012
TC:25 AU: Yang, Shenyuan;Prendergast, David;Neaton, Jeffrey B.;
12:239:4 Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics
DOI:10.1088/0957-4484/24/24/245306 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Liu, Xueyu;Liu, Pengbo;Huang, Hui;Chen, Changxin;Jin, Tiening;Zhang, Yafei;Huang, Xianliang;Jin, Zhiyuan;Li, Xiaogan;Tang, Zhenan;
12:239:5 Linker-Induced Anomalous Emission of Organic-Molecule Conjugated Metal-Oxide Nanoparticles
DOI:10.1021/nn301316j JN:ACS NANO PY:2012
TC:2 AU: Turkowski, Volodymyr;Babu, Suresh;Le, Duy;Kumar, Amit;Haldar, Manas K.;Wagh, Anil V.;Hu, Zhongjian;Karakoti, Ajay S.;Gesquiere, Andre J.;Law, Benedict;Mallik, Sanku;Rahman, Talat S.;Leuenberger, Michael N.;Seal, Sudipta;
12:239:6 Effect of biaxial strain on the band gap of wurtzite AlxGa1-xN
DOI:10.1007/s00339-012-6772-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:1 AU: Liou, Bo-Ting;Kuo, Yen-Kuang;
12:240:1 Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique
DOI:10.1063/1.4880738 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Halder, Nripendra N.;Biswas, Pranab;Nagabhushan, B.;Kundu, Souvik;Biswas, D.;Banerji, P.;
12:240:2 III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
DOI:10.1063/1.4865875 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Prucnal, Slawomir;Zhou, Shengqiang;Ou, Xin;Facsko, Stefan;Liedke, Maciej Oskar;Bregolin, Felipe;Liedke, Bartosz;Grebing, Jochen;Fritzsche, Monika;Huebner, Rene;Muecklich, Arndt;Rebohle, Lars;Helm, Manfred;Turek, Marcin;Drozdziel, Andrzej;Skorupa, Wolfgang;
12:240:3 n-InAs Nanopyramids Fully Integrated into Silicon
DOI:10.1021/nl201178d JN:NANO LETTERS PY:2011
TC:11 AU: Prucnal, Slawomir;Facsko, Stefan;Baumgart, Christine;Schmidt, Heidemarie;Liedke, Maciej Oskar;Rebohle, Lars;Shalimov, Artem;Reuther, Helfried;Kanjilal, Aloke;Muecklich, Arndt;Helm, Manfred;Zuk, Jerzy;Skorupa, Wolfgang;
12:240:4 Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si
DOI:10.1063/1.4862439 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Halder, Nripendra N.;Biswas, Pranab;Das, Tushar Dhabal;Das, Sanat Kr.;Chattopadhyay, S.;Biswas, D.;Banerji, P.;
12:240:5 Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration
DOI:10.1007/s11051-012-1279-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:6 AU: Halder, Nripendra N.;Kundu, Souvik;Mukherjee, Rabibrata;Biswas, D.;Banerji, P.;
12:240:6 InP nanocrystals on silicon for optoelectronic applications
DOI:10.1088/0957-4484/23/48/485204 JN:NANOTECHNOLOGY PY:2012
TC:9 AU: Prucnal, Slawomir;Zhou, Shengqiang;Ou, Xin;Reuther, Helfried;Liedke, Maciej Oskar;Muecklich, Arndt;Helm, Manfred;Zuk, Jerzy;Turek, Marcin;Pyszniak, Krzysztof;Skorupa, Wolfgang;
12:240:7 Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE
DOI:10.1007/s11051-010-0121-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:9 AU: Kumar, Mahesh;Roul, Basanta;Bhat, Thirumaleshwara N.;Rajpalke, Mohana K.;Sinha, Neeraj;Kalghatgi, A. T.;Krupanidhi, S. B.;
12:240:8 Ion-beam synthesis and characterization of narrow-gap A(3)B(5) nanocrystals in Si: Effect of implantation and annealing regimes
DOI:10.1016/j.mseb.2013.07.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:2 AU: Komarov, F.;Vlasukova, L.;Milchanin, O.;Wesch, W.;Wendler, E.;Zuk, J.;Parkhomenko, I.;
12:240:9 Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates
DOI:10.1080/14786435.2012.739289 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:1 AU: Matsumoto, Kimihisa;Yasuda, Hidehiro;Mori, Hirotaro;Furukawa, Tatsuya;
12:241:1 Recent achievements in AMMONO-bulk method
DOI:10.1016/j.jcrysgro.2010.04.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:34 AU: Dwilinski, R.;Doradzinski, R.;Garczynski, J.;Sierzputowski, L.;Kucharski, R.;Zajac, M.;Rudzinski, M.;Kudrawiec, R.;Serafinczuk, J.;Strupinski, W.;
12:241:2 Polarity inversion of N-face GaN using an aluminum oxide interlayer
DOI:10.1063/1.3524473 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Wong, Man Hoi;Wu, Feng;Speck, James S.;Mishra, Umesh K.;
12:241:3 High pressure in the synthesis and crystal growth of superconductors and III-N semiconductors
DOI:10.1080/14786435.2012.670735 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:0 AU: Karpinski, Janusz;
12:241:4 Gallium nitride nanowires by maskless hot phosphoric wet etching
DOI:10.1063/1.4819272 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Bharrat, D.;Hosalli, A. M.;Van Den Broeck, D. M.;Samberg, J. P.;Bedair, S. M.;El-Masry, N. A.;
12:241:5 Inversion by metalorganic chemical vapor deposition from N-to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes
DOI:10.1063/1.4841755 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hosalli, A. M.;Van Den Broeck, D. M.;Bharrat, D.;El-Masry, N. A.;Bedair, S. M.;
12:241:6 Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
DOI:10.1063/1.3560537 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Kudrawiec, R.;Rudzinski, M.;Gladysiewicz, M.;Janicki, L.;Hageman, P. R.;Strupinski, W.;Misiewicz, J.;Kucharski, R.;Zajac, M.;Doradzinski, R.;Dwilinski, R.;
12:241:7 The influence of indium on the growth of GaN from solution under high pressure
DOI:10.1016/j.jcrysgro.2010.04.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Grzegory, I.;Bockowski, M.;Strak, P.;Krukowski, S.;Porowski, S.;
12:241:8 Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes
DOI:10.1016/j.jcrysgro.2014.06.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Erlekampf, J.;Seebeck, J.;Savva, P.;Meissner, E.;Friedrich, J.;Alt, N. S. A.;Schluecker, E.;Frey, L.;
12:241:9 Inductively coupled plasma etching of through-cell vias in III-V multijunction solar cells using SiCl4/Ar
DOI:10.1116/1.4822015 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Zhao, Yuning;Fay, Patrick;Wibowo, Andree;Youtsey, Chris;
12:241:10 Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing
DOI:10.1116/1.4896592 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Yue, Yuanzheng;Yan, Xiaodong;Li, Wenjun;Xing, Huili Grace;Jena, Debdeep;Fay, Patrick;
12:241:11 Thermodynamics of the Al-Ga-N-2 system
DOI:10.1016/j.jcrysgro.2010.04.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:1 AU: Belousov, Andrey;Karpinski, J.;Batlogg, B.;
12:241:12 AlxGa1-xN bulk crystal growth: Crystallographic properties and p-T phase diagram
DOI:10.1016/j.jcrysgro.2010.04.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Belousov, Andrey;Katrych, S.;Hametner, K.;Guenther, D.;Karpinski, J.;Batlogg, B.;
12:241:13 Polarity control of AlN layers grown on sapphire substrates by oxygen doping during AlN nucleation
DOI:10.1016/j.jcrysgro.2013.09.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kinoshita, Toru;Yanagi, Hiroyuki;Inoue, Shin-ichiro;
12:242:1 Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
DOI:10.1063/1.3408777 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Xu, Xiaoqing;Liu, Xianglin;Guo, Yan;Wang, Jun;Song, Huaping;Yang, Shaoyan;Wei, Hongyuan;Zhu, Qinsheng;Wang, Zhanguo;
12:242:2 Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy
DOI:10.1063/1.3530445 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Liu, J. W.;Kobayashi, A.;Ueno, K.;Toyoda, S.;Kikuchi, A.;Ohta, J.;Fujioka, H.;Kumigashira, H.;Oshima, M.;
12:242:3 Natural band alignments of InN/GaN/AlN nanorod heterojunctions
DOI:10.1063/1.3641422 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kuo, Cheng-Tai;Chang, Kai-Kuen;Shiu, Hung-Wei;Liu, Chia-Rong;Chang, Lo-Yueh;Chen, Chia-Hao;Gwo, Shangjr;
12:242:4 Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities
DOI:10.1063/1.4768707 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Li, Huijie;Liu, Xianglin;Wang, Jianxia;Jin, Dongdong;Zhang, Heng;Yang, Shaoyan;Liu, Shuman;Mao, Wei;Hao, Yue;Zhu, QinSheng;Wang, Zhanguo;
12:242:5 Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction
DOI:10.1063/1.4793434 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Lee, Kai-Hsuan;Chang, Ping-Chuan;Chen, Tse-Pu;Chang, Sheng-Po;Shiu, Hung-Wei;Chang, Lo-Yueh;Chen, Chia-Hao;Chang, Shoou-Jinn;
12:242:6 Band offsets of epitaxial LaAlO3/TiO2 interface determined by X-ray photoelectron spectroscopy
DOI:10.1007/s00339-011-6535-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Yang, J. Y.;Sun, Y.;Lv, P.;He, L.;Dou, R. F.;Xiong, C. M.;Nie, J. C.;
12:242:7 Spontaneous-polarization-induced heterojunction asymmetry in III-nitride semiconductors
DOI:10.1063/1.3610976 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Kuo, Cheng-Tai;Chang, Kai-Kuen;Shiu, Hung-Wei;Lin, Shih-Chieh;Chen, Chia-Hao;Gwo, Shangjr;
12:242:8 Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces
DOI:10.1063/1.4826538 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Liu, J. W.;Kobayashi, A.;Ohta, J.;Fujioka, H.;Oshima, M.;
12:243:1 Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films
DOI:10.1063/1.3284101 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Meng, Xiangdong;Shi, Zhiming;Chen, Xiaobing;Zeng, Xianghua;Fu, Zhuxi;
12:243:2 Growth of silicon nanowires by electron beam evaporation using indium catalyst
DOI:10.1016/j.matlet.2011.08.064 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Phani, A. R.;
12:243:3 Control of oxygen vacancy concentration in ZnO nanowires containing sulfur as a reducing agent
DOI:10.1007/s13391-013-2176-5 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:5 AU: Seo, Keumyoung;Suh, Misook;Ju, Sanghyun;
12:243:4 Growth of Fe-doped ZnO nanorods using aerosol-assisted chemical vapour deposition via in situ doping
DOI:10.1007/s00339-014-8333-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Abd Aziz, Siti Nor Qurratu Aini;Pung, Swee-Yong;Lockman, Zainovia;
12:243:5 Controlled Formation of Oxide Shells from GaN Nanowires: Poly- to Single-Crystal
DOI:10.1007/s13391-011-0912-2 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:5 AU: Ham, Moon-Ho;Lee, Sanghun;Myoung, Jae-Min;Lee, Woong;
12:243:6 Growth of Ge Nanowires on Ge/Si Templates with Indium Catalyst via Metal Organic Chemical Vapor Deposition
DOI:10.1007/s13391-012-2080-4 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:4 AU: Park, Jinsub;Kim, Kihyun;
12:243:7 Identification of about 100-meV acceptor level in ZnO nanostructures by photoluminescence
DOI:10.1007/s00339-011-6322-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:1 AU: Liu, Chao;He, Haiping;Sun, Luwei;Xu, Zheng;Ye, Zhizhen;
12:243:8 Admittance Spectroscopy and Electrical Properties of Co3O4-Doped ZnO
DOI:10.1007/s13391-014-3331-3 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Paik, Jong-Hoo;Kim, Jin-Ho;
12:243:9 Modulation of carrier density in ZnO nanowires without impurity doping
DOI:10.1063/1.3372632 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Kim, D. S.;Richters, J. -P.;Scholz, R.;Voss, T.;Zacharias, M.;
12:243:10 Acceptor-related emissions in indium-doped ZnO nanorods
DOI:10.1063/1.3552981 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Liu, Chao;He, Haiping;Sun, Luwei;Yang, Qian;Ye, Zhizhen;Chen, Lanlan;
12:244:1 Absolute surface energies of polar and nonpolar planes of GaN
DOI:10.1103/PhysRevB.89.081305 JN:PHYSICAL REVIEW B PY:2014
TC:2 AU: Dreyer, C. E.;Janotti, A.;Van de Walle, C. G.;
12:244:2 Properties of threading screw dislocation core in wurtzite GaN studied by Heyd-Scuseria-Ernzerhof hybrid functional
DOI:10.1063/1.4858618 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Matsubara, M.;Godet, J.;Pizzagalli, L.;Bellotti, E.;
12:244:3 Electronic structure of 1/6 < 20(2)over-bar3 > partial dislocations in wurtzite GaN
DOI:10.1063/1.3569856 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Kioseoglou, J.;Kalesaki, E.;Lymperakis, L.;Neugebauer, J.;Komninou, Ph.;Karakostas, Th;
12:244:4 A new atomistic model for the threading screw dislocation core in wurtzite GaN
DOI:10.1016/j.commatsci.2011.07.051 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:5 AU: Belabbas, I.;Chen, J.;Nouet, G.;
12:244:5 Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy
DOI:10.1063/1.4873376 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Himmerlich, M.;Eisenhardt, A.;Shokhovets, S.;Krischok, S.;Raethel, J.;Speiser, E.;Neumann, M. D.;Navarro-Quezada, A.;Esser, N.;
12:244:6 A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces
DOI:10.1016/j.apsusc.2014.07.077 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Gonzalez-Hernandez, Rafael;Gonzalez-Garcia, Alvaro;Barragan-Yani, Daniel;Lopez-Perez, William;
12:244:7 GaN(0001) surface states: Experimental and theoretical fingerprints to identify surface reconstructions
DOI:10.1103/PhysRevB.88.125304 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Himmerlich, M.;Lymperakis, L.;Gutt, R.;Lorenz, P.;Neugebauer, J.;Krischok, S.;
12:244:8 Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.01.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Bryant, Benjamin N.;Hirai, Asako;Young, Erin C.;Nakamura, Shuji;Speck, James S.;
12:244:9 Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO
DOI:10.1063/1.3315944 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Wu, Z. H.;Sun, K. W.;Wei, Q. Y.;Fischer, A. M.;Ponce, F. A.;Kawai, Y.;Iwaya, M.;Kamiyama, S.;Amano, H.;Akasaki, I.;
12:244:10 A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire
DOI:10.1063/1.4769905 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Ravadgar, P.;Horng, R. H.;Ou, S. L.;
12:244:11 Reconstructions and electronic structure of (11(2)over-bar2) and (11(2)over-bar(2)over-bar) semipolar AlN surfaces
DOI:10.1063/1.4743007 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Kalesaki, E.;Lymperakis, L.;Kioseoglou, J.;Neugebauer, J.;Karakostas, Th;Komninou, Ph;
12:245:1 Rapid Flu Diagnosis Using Silicon Nanowire Sensor
DOI:10.1021/nl301516z JN:NANO LETTERS PY:2012
TC:19 AU: Shen, Fangxia;Wang, Jindong;Xu, Zhenqiang;Wu, Yan;Chen, Qi;Li, Xiaoguang;Jie, Xu;Li, Lidong;Yao, Maosheng;Guo, Xuefeng;Zhu, Tong;
12:245:2 Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs
DOI:10.1002/adfm.201303829 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Fang, Jun;Park, Se-Chul;Schlag, Leslie;Stauden, Thomas;Pezoldt, Joerg;Jacobs, Heiko O.;
12:245:3 Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger Print
DOI:10.1002/adma.201402589 JN:ADVANCED MATERIALS PY:2014
TC:0 AU: Fang, Jun;Park, Se-Chul;Schlag, Leslie;Stauden, Thomas;Pezoldt, Joerg;Jacobs, Heiko O.;
12:245:4 Gas Phase Electrodeposition: A Programmable Multimaterial Deposition Method for Combinatorial Nanostructured Device Discovery
DOI:10.1021/nl102344r JN:NANO LETTERS PY:2010
TC:9 AU: Lin, En-Chiang;Cole, Jesse J.;Jacobs, Heiko O.;
12:245:5 Effective Collection and Detection of Airborne Species Using SERS-Based Detection and Localized Electrodynamic Precipitation
DOI:10.1002/adma.201300472 JN:ADVANCED MATERIALS PY:2013
TC:4 AU: Lin, En-Chiang;Fang, Jun;Park, Se-Chul;Stauden, Thomas;Pezoldt, Joerg;Jacobs, Heiko O.;
12:245:6 Porous silicon nanoparticles as scavengers of hazardous viruses
DOI:10.1007/s11051-014-2430-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Osminkina, L. A.;Timoshenko, V. Yu;Shilovsky, I. P.;Kornilaeva, G. V.;Shevchenko, S. N.;Gongalsky, M. B.;Tamarov, K. P.;Abramchuk, S. S.;Nikiforov, V. N.;Khaitov, M. R.;Karamov, E. V.;
12:245:7 Mimicking Electrodeposition in the Gas Phase: A Programmable Concept for Selected-Area Fabrication of Multimaterial Nanostructures
DOI:10.1002/smll.200901547 JN:SMALL PY:2010
TC:7 AU: Cole, Jesse J.;Lin, En-Chiang;Barry, Chad R.;Jacobs, Heiko O.;
12:245:8 Porous silicon nanoparticles as sensitizers for ultrasonic hyperthermia
DOI:10.1063/1.4829148 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Sviridov, A. P.;Andreev, V. G.;Ivanova, E. M.;Osminkina, L. A.;Tamarov, K. P.;Timoshenko, V. Yu.;
12:245:9 Phenomenological model of photoluminescence degradation and photoinduced defect formation in silicon nanocrystal ensembles under singlet oxygen generation
DOI:10.1063/1.4904933 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Gongalsky, Maxim B.;Timoshenko, Victor Yu.;
12:245:10 Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules
DOI:10.1063/1.3586044 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Gongalsky, M. B.;Kharin, A. Yu.;Zagorodskikh, S. A.;Osminkina, L. A.;Timoshenko, V. Yu.;
12:246:1 Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures
DOI:10.1063/1.4895511 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Sangghaleh, A.;Pan, E.;Han, X.;
12:246:2 Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
DOI:10.1063/1.3688047 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Liu, Guipeng;Wu, Ju;Zhao, Guijuan;Liu, Shuman;Mao, Wei;Hao, Yue;Liu, Changbo;Yang, Shaoyan;Liu, Xianglin;Zhu, Qinsheng;Wang, Zhanguo;
12:246:3 Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures
DOI:10.1063/1.4799286 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Ji, Dong;Lu, Yanwu;Liu, Bing;Liu, Jinlong;
12:246:4 Dislocation-induced fields in piezoelectric AlGaN/GaN bimaterial heterostructures
DOI:10.1063/1.4765722 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Han, Xueli;Pan, Ernie;
12:246:5 Scattering of carriers by charged dislocations in semiconductors
DOI:10.1063/1.4803121 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Bansal, Bhavtosh;Ghosh, Rituparna;Venkataraman, V.;
12:246:6 Fields induced by three-dimensional dislocation loops in anisotropic magneto-electro-elastic bimaterials
DOI:10.1080/14786435.2013.806830 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:3 AU: Han, Xueli;Pan, Ernie;Sangghaleh, Ali;
12:246:7 A field theory of piezoelectric media containing dislocations
DOI:10.1063/1.4870931 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Taupin, V.;Fressengeas, C.;Ventura, P.;Lebyodkin, M.;Gornakov, V.;
12:246:8 Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
DOI:10.1063/1.3463469 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Yang, C. C.;Sheu, J. K.;Liang, Xin-Wei;Huang, Min-Shun;Lee, M. L.;Chang, K. H.;Tu, S. J.;Huang, Feng-Wen;Lai, W. C.;
12:247:1 Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
DOI:10.1021/nl903547r JN:NANO LETTERS PY:2010
TC:46 AU: Montazeri, Mohammad;Fickenscher, Melodie;Smith, Leigh M.;Jackson, Howard E.;Yarrison-Rice, Jan;Kang, Jung Hyun;Gao, Qiang;Tan, H. Hoe;Jagadish, Chennupati;Guo, Yanan;Zou, Jin;Pistol, Mats-Erik;Pryor, Craig E.;
12:247:2 Tailoring Electronic Transparency of Twin-Plane 1D Superlattices
DOI:10.1021/nn2008589 JN:ACS NANO PY:2011
TC:9 AU: Tsuzuki, Helio;Cesar, Daniel Ferreira;de Sousa Dias, Mariama Rebello;Castelano, Leonardo Kleber;Lopez-Richard, Victor;Rino, Jose Pedro;Marques, Gilmar Eugenio;
12:247:3 Tuning hole mobility in InP nanowires
DOI:10.1063/1.4764902 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Sousa Dias, M. Rebello;Picinin, A.;Lopez-Richard, V.;Ulloa, S. E.;Castelano, L. K.;Rino, J. P.;Marques, G. E.;
12:247:4 Fabrication and characterization of AlP-GaP core-shell nanowires
DOI:10.1016/j.jcrysgro.2011.03.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Borgstrom, Magnus T.;Mergenthaler, Kilian;Messing, Maria E.;Hakanson, Ulf;Wallentin, Jesper;Samuelson, Lars;Pistol, Mats-Erik;
12:247:5 Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions
DOI:10.1103/PhysRevB.81.233301 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Cesar, D. F.;Teodoro, M. D.;Tsuzuki, H.;Lopez-Richard, V.;Marques, G. E.;Rino, J. P.;Lourenco, S. A.;Marega, E., Jr.;Dias, I. F. L.;Duarte, J. L.;Gonzalez-Borrero, P. P.;Salamo, G. J.;
12:247:6 Uncoupled optical phonons in core/shell GaAs/GaP nanowires: Strain effects
DOI:10.1063/1.4761975 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Santiago-Perez, Dario G.;Trallero-Giner, C.;Perez-Alvarez, R.;Chico, L.;Baquero, R.;Marques, G. E.;
12:248:1 Studies on dislocation and surface morphology of AlxGa1-xN/GaN heterostructures grown by MOCVD
DOI:10.1016/j.jallcom.2014.07.170 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Loganathan, R.;Jayasakthi, M.;Prabakaran, K.;Ramesh, R.;Arivazhagan, P.;Baskar, K.;
12:248:2 Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer
DOI:10.1016/j.jallcom.2013.04.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Peng, Enchao;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Yin, Haibo;Chen, Hong;Feng, Chun;Jiang, Lijuan;Hou, Xun;Wang, Zhanguo;
12:248:3 Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation
DOI:10.1063/1.4891732 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yan, Junda;Wang, Xiaoliang;Wang, Quan;Qu, Shenqi;Xiao, Hongling;Peng, Enchao;Kang, He;Wang, Cuimei;Feng, Chun;Yin, Haibo;Jiang, Lijuan;Li, Baiquan;Wang, Zhanguo;Hou, Xun;
12:248:4 The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
DOI:10.1063/1.3688219 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Al Mustafa, N.;Granzner, R.;Polyakov, V. M.;Racko, J.;Mikolasek, M.;Breza, J.;Schwierz, F.;
12:248:5 Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
DOI:10.1016/j.jallcom.2014.03.154 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Li, Wei;Wang, Xiaoliang;Qu, Shenqi;Wang, Quan;Xiao, Hongling;Wang, Cuimei;Peng, Enchao;Hou, Xun;Wang, Zhanguo;
12:248:6 Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers
DOI:10.1016/j.jcrysgro.2013.07.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Peng, Enchao;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Yin, Haibo;Chen, Hong;Feng, Chun;Jiang, Lijuan;Hou, Xun;Wang, Zhanguo;
12:248:7 Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
DOI:10.1016/j.jallcom.2012.01.073 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:4 AU: Ding, Jieqin;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Yin, Haibo;Chen, Hong;Feng, Chun;Jiang, Lijuan;
12:248:8 Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer
DOI:10.1063/1.4775494 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Mizutani, Takashi;Yamada, Hiroyuki;Kishimoto, Shigeru;Nakamura, Fumihiko;
12:248:9 Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
DOI:10.1063/1.4872242 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Nakajima, Akira;Liu, Pucheng;Ogura, Masahiko;Makino, Toshiharu;Kakushima, Kuniyuki;Nishizawa, Shin-ichi;Ohashi, Hiromichi;Yamasaki, Satoshi;Iwai, Hiroshi;
12:248:10 Nitride based heterostructures with Ga- and N-polarity for sensing applications
DOI:10.1016/j.jcrysgro.2012.08.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Fandrich, Matte;Mehrtens, Thorsten;Aschenbrenner, Timo;Klein, Thorsten;Gebbe, Martina;Figge, Stephan;Kruse, Carsten;Rosenauer, Andreas;Hommel, Detlef;
12:248:11 Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching
DOI:10.1016/j.tsf.2012.02.001 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Kim, Hyun-Kyu;Ryu, Jae-Hyoung;Kim, Hee-Yun;Kang, Ji-Hye;Han, Nam;Park, Young Jae;Ryu, Beo Deul;Hong, Chang Hee;Kim, Hyung Gu;
12:249:1 Multiple growths of epitaxial lift-off solar cells from a single InP substrate
DOI:10.1063/1.3479906 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Lee, Kyusang;Shiu, Kuen-Ting;Zimmerman, Jeramy D.;Renshaw, Christopher K.;Forrest, Stephen R.;
12:249:2 High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition
DOI:10.1063/1.4730442 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Zheng, Maxwell;Yu, Zhibin;Seok, Tae Joon;Chen, Yu-Ze;Kapadia, Rehan;Takei, Kuniharu;Aloni, Shaul;Ager, Joel W.;Wu, Ming;Chueh, Yu-Lun;Javey, Ali;
12:249:3 Polycrystalline indium phosphide on silicon using a simple chemical route
DOI:10.1063/1.4794006 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Metaferia, Wondwosen;Dagur, Pritesh;Junesand, Carl;Hu, Chen;Lourdudoss, Sebastian;
12:249:4 Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
DOI:10.1016/j.jcrysgro.2012.05.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Chandra, G. Hema;Perez de la Cruz, J.;
12:249:5 High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition
DOI:10.1063/1.4895388 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Dutta, P.;Rathi, M.;Zheng, N.;Gao, Y.;Yao, Y.;Martinez, J.;Ahrenkiel, P.;Selvamanickam, V.;
12:249:6 Reuse of GaAs substrates for epitaxial lift-off by employing protection layers
DOI:10.1063/1.3684555 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Lee, Kyusang;Zimmerman, Jeramy D.;Xiao, Xin;Sun, Kai;Forrest, Stephen R.;
12:249:7 Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy
DOI:10.1063/1.4890718 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Metaferia, Wondwosen;Sun, Yan-Ting;Pietralunga, Silvia M.;Zani, Maurizio;Tagliaferri, Alberto;Lourdudoss, Sebastian;
12:249:8 Indium phosphide films prepared by flash evaporation technique: Synthesis and characterization
DOI:10.1016/j.tsf.2009.08.054 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Gayen, R. N.;Das, S. N.;Dalui, S.;Paul, R.;Bhar, R.;Pal, A. K.;
12:249:9 Non-Destructive Wafer Recycling for Low-Cost Thin-Film Flexible Optoelectronics
DOI:10.1002/adfm.201400453 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Lee, Kyusang;Zimmerman, Jeramy D.;Hughes, Tyler W.;Forrest, Stephen R.;
12:249:10 Morphological and spatial control of InP growth using closed-space sublimation
DOI:10.1063/1.4768836 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Kiriya, Daisuke;Zheng, Maxwell;Kapadia, Rehan;Zhang, Junjun;Hettick, Mark;Yu, Zhibin;Takei, Kuniharu;Wang, Hsin-Hua Hank;Lobaccaro, Peter;Javey, Ali;
12:249:11 High mobility single-crystalline-like germanium thin films on flexible, inexpensive substrates
DOI:10.1016/j.tsf.2012.12.041 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Wang, R.;Sambandam, S. N.;Majkic, G.;Galstyan, E.;Selvamanickam, V.;
12:250:1 On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3499364 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Yan, Dawei;Lu, Hai;Cao, Dongsheng;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;
12:250:2 Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis
DOI:10.1063/1.4869020 JN:AIP ADVANCES PY:2014
TC:4 AU: Zhu, Jie-Jie;Ma, Xiao-Hua;Hou, Bin;Chen, Wei-Wei;Hao, Yue;
12:250:3 On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
DOI:10.1063/1.4798257 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Xia, Ling;Hanson, Allen;Boles, Timothy;Jin, Donghyun;
12:250:4 Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors
DOI:10.1063/1.4871802 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhu, Jie-Jie;Ma, Xiao-Hua;Hou, Bin;Chen, Wei-Wei;Hao, Yue;
12:250:5 A study of electrically active traps in AlGaN/GaN high electron mobility transistor
DOI:10.1063/1.4826922 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yang, Jie;Cui, Sharon;Ma, T. P.;Hung, Ting-Hsiang;Nath, Digbijoy;Krishnamoorthy, Sriram;Rajan, Siddharth;
12:250:6 Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
DOI:10.1063/1.4795717 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Sun, X.;Saadat, O. I.;Chang-Liao, K. S.;Palacios, T.;Cui, S.;Ma, T. P.;
12:250:7 Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
DOI:10.1063/1.4813309 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Nath, D. N.;Yang, Z. C.;Lee, C-Y.;Park, P. S.;Wu, Y-R.;Rajan, S.;
12:250:8 Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas
DOI:10.1016/j.tsf.2014.09.019 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Kawakami, Retsuo;Niibe, Masahito;Nakano, Yoshitaka;Shirahama, Tatsuo;Aoki, Kazuma;Oba, Kenta;Takabatake, Mari;Mukai, Takashi;
12:250:9 Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors
DOI:10.1063/1.4758995 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Hanna, Mina J.;Zhao, Han;Lee, Jack C.;
12:250:10 Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment
DOI:10.1016/j.tsf.2013.04.103 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Lim, Jong-Won;Ahn, Ho-Kyun;Kim, Seong-il;Kang, Dong-Min;Lee, Jong-Min;Min, Byoung-Gue;Lee, Sang-Heung;Yoon, Hyung-Sup;Ju, Chull-Won;Kim, Haecheon;Mun, Jae-Kyoung;Nam, Eun-Soo;Park, Hyung-Moo;
12:251:1 Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
DOI:10.1063/1.3668104 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Shan, Qifeng;Meyaard, David S.;Dai, Qi;Cho, Jaehee;Schubert, E. Fred;Son, Joong Kon;Sone, Cheolsoo;
12:251:2 Analysis of thermal properties of GaInN light-emitting diodes and laser diodes
DOI:10.1063/1.3493117 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Shan, Qifeng;Dai, Qi;Chhajed, Sameer;Cho, Jaehee;Schubert, E. Fred;
12:251:3 Strong Correlation between Capacitance and Breakdown Voltage of GaInN/GaN Light-Emitting Diodes
DOI:10.1007/s13391-014-4008-7 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Cho, Jaehee;Schubert, E. F.;Son, Joong Kon;Kim, Dong Yeong;Kim, Jong Kyu;
12:251:4 Characteristics of dotlike green satellite emission in GaInN light emitting diodes
DOI:10.1063/1.3541880 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Mao, An;Cho, Jaehee;Dai, Qi;Schubert, E. Fred;Son, Joong Kon;Park, Yongjo;
12:251:5 Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes
DOI:10.1063/1.4754829 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Shan, Qifeng;Cho, Yong Suk;Lin, Guan-Bo;Meyaard, David S.;Cho, Jaehee;Schubert, E. Fred;Son, Joong Kon;Sone, Cheolsoo;
12:251:6 Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
DOI:10.1063/1.4885695 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Uren, Michael J.;Caesar, Markus;Gajda, Mark A.;Kuball, Martin;
12:251:7 Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents
DOI:10.1063/1.4772683 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Lu, Cimang;Wang, Lei;Lu, Jianing;Li, Rui;Liu, Lei;Li, Ding;Liu, Ningyang;Li, Lei;Cao, Wenyu;Yang, Wei;Chen, Weihua;Du, Weimin;Lee, Ching-Ting;Hu, Xiaodong;
12:251:8 Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes
DOI:10.1016/j.apsusc.2013.06.138 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Choi, Hee Seok;Kim, Hak Jun;Lee, Jung Ju;Seo, Hyo Won;Tawfik, Wael Z.;Ha, Jun-Seok;Ryu, Sang-Wan;Jun, Seong Ran;Jeong, Tak;Lee, June Key;
12:251:9 Effect of current waveform on the performance of phosphor converted nitride light emitting diodes
DOI:10.1063/1.4862305 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Ludwiczak, Bogna;Jantsch, Wolfgang;
12:251:10 Straightforward electrical measurement of forward-voltage to investigate thermal effects in InGaN/GaN high-brightness light-emitting diodes
DOI:10.1116/1.4901411 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Hancock, Bobby Logan;Holtz, Mark;
12:251:11 Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement
DOI:10.1063/1.4861116 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Yang, Shu;Zhou, Chunhua;Jiang, Qimeng;Lu, Jianbiao;Huang, Baoling;Chen, Kevin J.;
12:251:12 Numerical Simulation of High Power LED Heat-Dissipating System
DOI:10.1007/s13391-014-8003-9 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Wu, Shih-Jeh;Hsu, Hsiang-Chen;Fu, Shen-Li;Yeh, Jiam-Nan;
12:252:1 Hybrid structure for efficiency enhancement of photodetectors
DOI:10.1016/j.apsusc.2012.08.037 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Malekmohammad, M.;Soltanolkotabi, M.;Asadi, R.;Naderi, M. H.;Erfanian, A.;Zahedinejad, M.;Bagheri, S.;Khaje, M.;
12:252:2 Two dimensional metallic photonic crystals for light trapping and anti-reflective coatings in thermophotovoltaic applications
DOI:10.1063/1.4862180 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Shemelya, Corey;Demeo, Dante F.;Vandervelde, Thomas E.;
12:252:3 Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction
DOI:10.1063/1.3666234 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Reyner, Charles J.;Wang, Jin;Nunna, Kalyan;Lin, Andrew;Liang, Baolai;Goorsky, Mark S.;Huffaker, D. L.;
12:252:4 GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method
DOI:10.1007/s11664-014-3029-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: DeMeo, Dante;Shemelya, Corey;Downs, Chandler;Licht, Abigail;Magden, Emir Salih;Rotter, Tom;Dhital, Chetan;Wilson, Stephen;Balakrishnan, Ganesh;Vandervelde, Thomas E.;
12:252:5 Tailored antireflective biomimetic nanostructures for UV applications
DOI:10.1088/0957-4484/21/42/425301 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Morhard, Christoph;Pacholski, Claudia;Lehr, Dennis;Brunner, Robert;Helgert, Michael;Sundermann, Michael;Spatz, Joachim P.;
12:252:6 Combined micro- and nano-scale surface textures for enhanced near-infrared light harvesting in silicon photovoltaics
DOI:10.1088/0957-4484/22/9/095201 JN:NANOTECHNOLOGY PY:2011
TC:19 AU: Chang, Chia-Hua;Yu, Peichen;Hsu, Min-Hsiang;Tseng, Ping-Cheng;Chang, Wei-Lun;Sun, Wen-Ching;Hsu, Wei-Chih;Hsu, Shih-Hsin;Chang, Yia-Chung;
12:252:7 Comparison of Photonic-Crystal-Enhanced Thermophotovoltaic Devices With and Without a Resonant Cavity
DOI:10.1007/s11664-012-2081-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:6 AU: Shemeya, Corey;Vandervelde, Thomas E.;
12:252:8 Cryogenic thermal simulator for testing low temperature thermophotovoltaic cells
DOI:10.1116/1.3581095 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: DeMeo, Dante F.;Vandervelde, Thomas E.;
12:252:9 Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
DOI:10.1016/j.jcrysgro.2015.07.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Tan, K. H.;Jia, B. W.;Loke, W. K.;Wicaksono, S.;Yoon, S. F.;
12:252:10 Increasing the Order Parameter of Quasi-Hexagonal Micellar Nanostructures by Ultrasound Annealing
DOI:10.1021/la303991x JN:LANGMUIR PY:2013
TC:3 AU: Williges, Christian;Chen, Wenwen;Morhard, Christoph;Spatz, Joachim P.;Brunner, Robert;
12:253:1 Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds
DOI:10.1021/nl904282v JN:NANO LETTERS PY:2010
TC:23 AU: Hong, Ki-Ha;Kim, Jongseob;Lee, Jung Hoon;Shin, Jaikwang;Chung, U-In;
12:253:2 Anchor Group versus Conjugation: Toward the Gap-State Engineering of Functionalized ZnO(10(1)over-bar0) Surface for Optoelectronic Applications
DOI:10.1021/ja1101008 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:39 AU: Calzolari, Arrigo;Ruini, Alice;Catellani, Alessandra;
12:253:3 Surface Ferromagnetic p-Type ZnO Nanowires through Charge Transfer Doping
DOI:10.1021/am201633x JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:1 AU: Lee, Sung-Hoon;Kim, Jongseob;Hong, Ki-Ha;Shin, Jaikwang;Kim, Sungjin;Kim, Kinam;
12:253:4 Impact of ammonia on the electrical properties of p-type Si nanowire arrays
DOI:10.1063/1.4827184 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Li, Chuanbo;Zhang, Chunqian;Fobelets, Kristel;Zheng, Jun;Xue, Chunlai;Zuo, Yuhua;Cheng, Buwen;Wang, Qiming;
12:253:5 Surface states and conductivity of silicon nano-wires
DOI:10.1063/1.4798611 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Bhaskar, Umesh Kumar;Pardoen, Thomas;Passi, Vikram;Raskin, Jean-Pierre;
12:253:6 Conductance modulation of Si nanowire arrays
DOI:10.1063/1.4768692 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Li, Chuanbo;Krali, Emiljana;Fobelets, Kristel;Cheng, Buwen;Wang, Qiming;
12:253:7 Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events
DOI:10.1063/1.3583559 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Dubey, Girjesh;Rosei, Federico;Lopinski, Gregory P.;
12:253:8 Molecular Modulation of Conductivity on H-Terminated Silicon-On-Insulator Substrates
DOI:10.1002/smll.201001285 JN:SMALL PY:2010
TC:4 AU: Dubey, Girjesh;Rosei, Federico;Lopinski, Gregory P.;
12:253:9 Energy level alignment of catechol molecular orbitals on ZnO(1 1 (2)over-bar 0) and TiO2(110) surfaces
DOI:10.1016/j.apsusc.2010.01.111 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Rangan, Sylvie;Theisen, Jean-Patrick;Bersch, Eric;Bartynski, R. A.;
12:254:1 Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants
DOI:10.1063/1.3676275 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Won, Dongjin;Weng, Xiaojun;Redwing, Joan M.;
12:254:2 Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates
DOI:10.1016/j.jcrysgro.2013.04.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Won, Dongjin;Redwing, Joan M.;
12:254:3 Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer
DOI:10.1016/j.jcrysgro.2013.10.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Li, Liang;Yang, Lin'an;Cao, Rongtao;Xu, Sheng Rui;Zhou, Xiaowei;Xue, Junshuai;
12:254:4 Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates
DOI:10.1063/1.4845575 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Won, Dongjin;Weng, Xiaojun;Al Balushi, Zakaria Y.;Redwing, Joan M.;
12:254:5 Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition
DOI:10.1063/1.3487955 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Won, Dongjin;Weng, Xiaojun;Redwing, Joan M.;
12:254:6 Selective etching of dislocations in GaN grown by low-pressure solution growth
DOI:10.1016/j.jcrysgro.2010.07.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Knoke, I. Y.;Berwian, P.;Meissner, E.;Friedrich, J.;Strunk, H. P.;Mueller, G.;
12:254:7 TEM study of defects in AlxGa1-xN layers with different polarity
DOI:10.1016/j.jcrysgro.2011.10.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Tikhonov, A. V.;Malin, T. V.;Zhuravlev, K. S.;Dobos, L.;Pecz, B.;
12:254:8 Electrical and luminescent properties and deep traps spectra of N-polar GaN films
DOI:10.1016/j.mseb.2009.10.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Sun, Q.;Zhang, Y.;Cho, Y. S.;Lee, I. -H.;Han, J.;
12:254:9 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire
DOI:10.1016/j.jallcom.2012.07.123 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Zhao, D. G.;Jiang, D. S.;Wu, L. L.;Le, L. C.;Li, L.;Chen, P.;Liu, Z. S.;Zhu, J. J.;Wang, H.;Zhang, S. M.;Yang, H.;
12:254:10 Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
DOI:10.1016/j.jcrysgro.2011.12.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Meissner, E.;Schweigard, S.;Friedrich, J.;Paskova, T.;Udwary, K.;Leibiger, G.;Habel, F.;
12:255:1 Chirality-induced polarization effects in the cuticle of scarab beetles: 100 years after Michelson
DOI:10.1080/14786435.2011.648228 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:26 AU: Arwin, Hans;Magnusson, Roger;Landin, Jan;Jarrendahl, Kenneth;
12:255:2 Evidence for a dispersion relation of optical modes in the cuticle of the scarab beetle Cotinis mutabilis
DOI:10.1364/OME.4.002484 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:4 AU: Mendoza-Galvan, A.;Munoz-Pineda, E.;Jarrendahl, K.;Arwin, H.;
12:255:3 Optical and morphological characterisation of low refractive index materials for coatings on solar collector glazing
DOI:10.1016/j.renene.2012.10.052 JN:RENEWABLE ENERGY PY:2013
TC:3 AU: Hody-Le Caer, V.;De Chambrier, E.;Mertin, S.;Joly, M.;Schaer, M.;Scartezzini, J. -L.;Schueler, A.;
12:255:4 Synthesis of nano-bubble dispersion strengthened (N-BDS) metal by PMMA dissociated polymer gases
DOI:10.1016/j.msea.2013.06.049 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2013
TC:1 AU: Oono, Naoko;Kawano, Ryohei;Shi, Shi;Ukai, Shigeharu;Hayashi, Shigenari;
12:255:5 Chiral nanostructures producing near circular polarization
DOI:10.1364/OME.4.001389 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Magnusson, Roger;Hsiao, Ching-Lien;Birch, Jens;Arwin, Hans;Jarrendahl, Kenneth;
12:255:6 Polarizing properties and structural characteristics of the cuticle of the scarab Beetle Chrysina gloriosa
DOI:10.1016/j.tsf.2013.11.149 JN:THIN SOLID FILMS PY:2014
TC:3 AU: del Rio, Lia Fernandez;Arwin, Hans;Jarrendahl, Kenneth;
12:255:7 Comparison and analysis of Mueller-matrix spectra from exoskeletons of blue, green and red Cetonia aurata
DOI:10.1016/j.tsf.2014.02.012 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Arwin, H.;del Rio, L. Fernandez;Jarrendahl, K.;
12:255:8 Synthesis of bubble dispersion strengthened copper by using pyrolysis gases of Poly (methyl methacrylate)
DOI:10.1016/j.msea.2014.08.048 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2014
TC:0 AU: Shi, Shi;Oono, Naoko;Ukai, Shigeharu;Abe, Yosuke;
12:255:9 Accuracy of color determination from spectroscopic ellipsometry measurements
DOI:10.1016/j.tsf.2010.12.058 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Johs, Blaine;Arwin, Hans;Wagner, Thomas;Appel, David;Peros, Dimitrios;
12:255:10 Useful Mueller matrix symmetries for ellipsometry
DOI:10.1016/j.tsf.2013.10.101 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Arteaga, Oriol;
12:255:11 Symmetries and relationships between elements of the Mueller matrix spectra of the cuticle of the beetle Cotinis mutabilis
DOI:10.1016/j.tsf.2013.11.144 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Munoz-Pineda, E.;Jarrendahl, K.;Arwin, H.;Mendoza-Galvan, A.;
12:256:1 Overview and status of bottom-up silicon nanowire electronics
DOI:10.1016/j.mssp.2012.05.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:8 AU: Fasoli, A.;Milne, W. I.;
12:256:2 Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting
DOI:10.1007/s00339-013-7682-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Liu, Kong;Qu, Shengchun;Zhang, Xinhui;Tan, Furui;Bi, Yu;Lu, Shudi;Wang, Zhanguo;
12:256:3 Simulation of junctionless Si nanowire transistors with 3 nm gate length
DOI:10.1063/1.3478012 JN:APPLIED PHYSICS LETTERS PY:2010
TC:30 AU: Ansari, Lida;Feldman, Baruch;Fagas, Giorgos;Colinge, Jean-Pierre;Greer, James C.;
12:256:4 A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin)
DOI:10.1021/nl2040817 JN:NANO LETTERS PY:2012
TC:7 AU: Ansari, Lida;Fagas, Giorgos;Colinge, Jean-Pierre;Greer, James C.;
12:256:5 Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires
DOI:10.1063/1.4896293 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ansari, Lida;Fagas, Giorgos;Greer, James C.;
12:256:6 Aluminum-enhanced sharpening of silicon nanocones
DOI:10.1007/s00339-010-5751-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:4 AU: Wang, Yewu;Bauer, Jan;Senz, Stephan;Breitenstein, Otwin;Goesele, Ulrich;
12:256:7 Fabrication of silicon microwire arrays for photovoltaic applications
DOI:10.1007/s00339-010-6009-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:4 AU: Guo, Ning;Wei, Jinquan;Shu, Qinke;Jia, Yi;Li, Zhen;Zhang, Kun;Zhu, Hongwei;Wang, Kunlin;Song, Shuang;Xu, Ying;Wu, Dehai;
12:257:1 Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers
DOI:10.1063/1.4798264 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Vasil'ev, P. P.;Sergeev, A. B.;Smetanin, I. V.;Weig, T.;Schwarz, U. T.;Sulmoni, L.;Dorsaz, J.;Lamy, J. -M.;Carlin, J. -F.;Grandjean, N.;Zeng, X.;Stadelmann, T.;Grossmann, S.;Hoogerwerf, A. C.;Boiko, D. L.;
12:257:2 100 W peak-power 1 GHz repetition picoseconds optical pulse generation using blue-violet GaInN diode laser mode-locked oscillator and optical amplifier
DOI:10.1063/1.3462942 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Koda, Rintaro;Oki, Tomoyuki;Miyajima, Takao;Watanabe, Hideki;Kuramoto, Masaru;Ikeda, Masao;Yokoyama, Hiroyuki;
12:257:3 Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes
DOI:10.1063/1.3514232 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Scheibenzuber, W. G.;Schwarz, U. T.;Sulmoni, L.;Carlin, J. -F.;Castiglia, A.;Grandjean, N.;
12:257:4 Saturable absorbing dynamics of GaInN multiquantum well structures
DOI:10.1063/1.3583456 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Miyajima, Takao;Kono, Shunsuke;Watanabe, Hideki;Oki, Tomoyuki;Koda, Rintaro;Kuramoto, Masaru;Ikeda, Masao;Yokoyama, Hiroyuki;
12:257:5 200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity
DOI:10.1063/1.4747808 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Kono, Shunsuke;Watanabe, Hideki;Koda, Rintaro;Miyajima, Takao;Kuramoto, Masaru;
12:257:6 Optical bistability in InGaN-based multisection laser diodes
DOI:10.1063/1.3591977 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Dorsaz, J.;Boiko, D. L.;Sulmoni, L.;Carlin, J. -F.;Scheibenzuber, W. G.;Schwarz, U. T.;Grandjean, N.;
12:257:7 Static and dynamic properties of multi-section InGaN-based laser diodes
DOI:10.1063/1.4768163 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Sulmoni, L.;Lamy, J. -M.;Dorsaz, J.;Castiglia, A.;Carlin, J. -F.;Scheibenzuber, W. G.;Schwarz, U. T.;Zeng, X.;Boiko, D. L.;Grandjean, N.;
12:257:8 Enormously high-peak-power optical pulse generation from a single-transverse-mode GaInN blue-violet laser diode
DOI:10.1063/1.3299261 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Kuramoto, Masaru;Oki, Tomoyuki;Sugahara, Tomoya;Kono, Shunsuke;Ikeda, Masao;Yokoyama, Hiroyuki;
12:257:9 Mode locking of an external-cavity bisection GaInN blue-violet laser diode producing 3 ps duration optical pulses
DOI:10.1063/1.3292025 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Saito, Kyosuke;Watanabe, Hideki;Miyajima, Takao;Ikeda, Masao;Yokoyama, Hiroyuki;
12:257:10 Direct generation of 20 W peak power picosecond optical pulses from an external-cavity mode-locked GaInN laser diode incorporating a flared waveguide
DOI:10.1063/1.3640499 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Oki, Tomoyuki;Koda, Rintaro;Kono, Shunsuke;Miyajima, Takao;Watanabe, Hideki;Kuramoto, Masaru;Ikeda, Masao;Yokoyama, Hiroyuki;
12:257:11 Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor lasers
DOI:10.1063/1.3679376 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Smetanin, I. V.;Vasil'ev, P. P.;
12:258:1:1 Performance of p- and n-side illuminated microcrystalline silicon solar cells following 2 MeV electron bombardment
DOI:10.1063/1.4756907 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Smirnov, V.;Astakhov, O.;Carius, R.;Pieters, B. E.;Petrusenko, Yu;Borysenko, V.;Finger, F.;
12:258:1:2 Relationship between absorber layer defect density and performance of a-Si:H and mu c-Si:H solar cells studied over a wide range of defect densities generated by 2 MeV electron bombardment
DOI:10.1016/j.solmat.2013.12.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Astakhov, O.;Smirnov, Vladimir;Carius, Reinhard;Pieters, B. E.;Petrusenko, Yuri;Borysenko, Valeriy;Finger, F.;
12:258:1:3 Variation of the defect density in a-Si:H and mu c-Si:H based solar cells with 2 MeV electron bombardment
DOI:10.1016/j.jnoncrysol.2011.12.091 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Astakhov, Oleksandr;Smirnov, Vladimir;Carius, Reinhard;Petrusenko, Yuri;Borysenko, Valeriy;Boettler, Wanjiao;Finger, Friedhelm;
12:258:1:4 Performance of p- and n-side illuminated microcrystalline silicon solar cells following 2MeV electron bombardment (vol 101, 143903, 2012)
DOI:10.1063/1.4763355 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Smirnov, V.;Astakhov, O.;Carius, R.;Pieters, B. E.;Petrusenko, Yu.;Borysenko, V.;Finger, F.;
12:258:2:1 Microcrystalline silicon carbide window layers in thin film silicon solar cells
DOI:10.1016/j.solmat.2011.11.039 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:16 AU: Chen, T.;Huang, Y.;Dasgupta, A.;Luysberg, M.;Houben, L.;Yang, D.;Carius, R.;Finger, F.;
12:258:2:2 Effect of He on the optical and electrical properties of RF magnetron sputtered amorphous SiC:H films
DOI:10.1016/j.jnoncrysol.2013.05.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:0 AU: Saito, N.;Fujita, M.;Nakaaki, I.;Yamawaki, S.;Iwata, H.;Nishioka, K.;
12:258:2:3 Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties
DOI:10.1016/j.tsf.2011.01.298 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Chen, Tao;Yang, Deren;Carius, Reinhard;Finger, Friedhelm;
12:258:2:4 Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Investigation of defects with electron spin resonance
DOI:10.1016/j.tsf.2011.01.320 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Xiao, Lihong;Astakhov, Oleksandr;Chen, Tao;Stutzmann, Martin;Finger, Friedhelm;
12:258:3:1 High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells
DOI:10.1063/1.3460917 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Miyajima, Shinsuke;Irikawa, Junpei;Yamada, Akira;Konagai, Makoto;
12:258:3:2 Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter
DOI:10.1063/1.3552888 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Miyajima, Shinsuke;Irikawa, Junpei;Yamada, Akira;Konagai, Makoto;
12:258:3:3 Low concentrator hetero-junction microcrystalline silicon solar cells
DOI:10.1016/j.jnoncrysol.2012.01.038 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Kasashima, Shunsuke;Krajangsang, Taweewat;Hongsingthong, Aswin;Fujioka, Hideaki;Sichanugrist, Porponth;Konagai, Makoto;
12:258:3:4 Preparation of Al-doped hydrogenated nanocrystalline cubic silicon carbide by VHF-PECVD for heterojunction emitter of n-type crystalline silicon solar cells
DOI:10.1016/j.solmat.2012.07.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:4 AU: Hamashita, Daisuke;Miyajima, Shinsuke;Konagai, Makoto;
12:258:4:1 Effects of working pressure and substrate temperature on the structure and mechanical properties of nanocrystalline SiC thin films deposited by bias-enhanced hot filament chemical vapor deposition
DOI:10.1016/j.tsf.2014.03.024 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Liu, Zhong Li;Xiang, Li;
12:258:4:2 A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method
DOI:10.1016/j.jnoncrysol.2012.03.028 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Yoshida, Norimitsu;Terazawa, Sho;Hayashi, Kotaro;Hamaguchi, Tomonari;Natsuhara, Hironori;Nonomura, Shuichi;
12:258:4:3 Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature
DOI:10.1016/j.jcrysgro.2012.07.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Jeong, Seong-Min;Kim, Kyung-Hun;Yoon, Young Joon;Lee, Myung-Hyun;Seo, Won-Seon;
12:258:4:4 Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates
DOI:10.1016/j.tsf.2011.01.412 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Yu, Sheng-Wang;Fan, Peng-Wei;Tang, Wei-Zhong;Li, Xiao-Jing;Hu, Hao-Lin;Hei, Hong-Jun;Zhang, Si-Kai;Lu, Fan-Xiu;
12:259:1 Band offsets, Schottky barrier heights, and their effects on electronic devices
DOI:10.1116/1.4818426 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:18 AU: Robertson, John;
12:259:2 Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface
DOI:10.1103/PhysRevB.84.115323 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Nishi, Yoshifumi;Yamauchi, Takashi;Marukame, Takao;Kinoshita, Atsuhiro;Koga, Junji;Kato, Koichi;
12:259:3 Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning
DOI:10.1063/1.4742861 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Lin, L.;Guo, Y.;Robertson, J.;
12:259:4 Schottky barrier at the AlN/metal junction
DOI:10.1063/1.4772716 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Slepko, Alexander;Ramdani, Jamal;Demkov, Alexander A.;
12:259:5 Barrier height determination of silicide-silicon contact by hybrid density functional simulation
DOI:10.1063/1.3657767 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Gao, Qun;Guo, Jing;
12:259:6 Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation
DOI:10.1063/1.4893152 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Oka, Hiroshi;Minoura, Yuya;Hosoi, Takuji;Shimura, Takayoshi;Watanabe, Heiji;
12:259:7 Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
DOI:10.1016/j.tsf.2013.02.068 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Liu, Z. Q.;Chim, W. K.;Chiam, S. Y.;Pan, J. S.;Ng, C. M.;
12:260:1 Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates
DOI:10.1063/1.3388014 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Lee, Kyu-Seung;Kwack, Ho-Sang;Hwang, Jun-Seok;Roh, Tae-Moo;Cho, Yong-Hoon;Lee, Jae-Hoon;Kim, Yong-Chun;Kim, Chang Soo;
12:260:2 Correlation between Luminescence and Defects in Nonpolar and Semipolar InGaN/GaN Quantum Wells on Planar and Patterned Sapphire Substrates
DOI:10.1007/s13391-013-3077-3 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:1 AU: Lee, Seunga;Yoo, Geunho;Jang, Jongjin;Won, Youngjong;Nam, Okhyun;
12:260:3 High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphire
DOI:10.1016/j.jcrysgro.2013.10.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Min, Daehong;Yoo, Geunho;Moon, Seunghwan;Kwak, Joonseop;Kim, Hyeongjin;Nam, Okhyun;
12:260:4 Influence of Controlled Growth Rate on Tilt Mosaic Microstructures of Nonpolar a-plane GaN Epilayers Grown on r-plane Sapphire
DOI:10.1007/s13391-012-2060-8 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:8 AU: Lee, Yong Seok;Seo, Tae Hoon;Park, Ah Hyun;Lee, Kang Jea;Chung, Sang Jo;Suh, Eun-Kyung;
12:260:5 Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate
DOI:10.1016/j.jcrysgro.2012.08.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Jang, Jongjin;Lee, Kwanhyun;Hwang, Junghwan;Jung, Joocheol;Lee, Seunga;Lee, Kyuho;Kong, Bohyun;Cho, Hyunghoun;Nam, Okhyun;
12:260:6 Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy
DOI:10.1016/j.apsusc.2011.10.086 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Kong, Bo Hyun;Sun, Qian;Han, Jung;Lee, In-Hwan;Cho, Hyung Koun;
12:260:7 Effect of Reflective P-Type Ohmic Contact on Thermal Reliability of Vertical InGaN/GaN LEDs
DOI:10.1007/s13391-014-4127-1 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Son, Jun Ho;Song, Yang Hee;Kim, Buem Joon;Lee, Jong-Lam;
12:260:8 Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire
DOI:10.1007/s13391-013-3065-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Lee, Yong Seok;Kim, Hun;Seo, Tae Hoon;Park, Ah Hyun;Lee, Seul Be;Chung, Sang Jo;Choi, Chel-Jong;Suh, Eun-Kyung;
12:260:9 Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates
DOI:10.1063/1.4803515 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Lee, Kyu-Seung;Isnaeni;Yoo, Yang-Seok;Lee, Jae-Hoon;Kim, Yong-Chun;Cho, Yong-Hoon;
12:260:10 Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy
DOI:10.1016/j.jcrysgro.2010.09.072 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Tao, Y. B.;Yu, T. J.;Yang, Z. Y.;Ling, D.;Wang, Y.;Chen, Z. Z.;Yang, Z. J.;Zhang, G. Y.;
12:260:11 Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy
DOI:10.1016/j.jcrysgro.2014.07.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Lee, Moonsang;Mikulik, Dmitry;Park, Sungsoo;Im, Kyuhyun;Cho, Seong-Ho;Ko, Dongsu;Kim, Un Jeong;Hwang, Sungwoo;Yoon, Euijoon;
12:260:12 Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
DOI:10.1063/1.4716472 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Park, S. H.;Park, J.;You, D. -J.;Joo, K.;Moon, D.;Jang, J.;Kim, D. -U.;Chang, H.;Moon, S.;Song, Y. -K.;Lee, G. -D.;Jeon, H.;Xu, J.;Nanishi, Y.;Yoon, E.;
12:261:1 Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields
DOI:10.1016/j.apsusc.2014.02.155 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Jaculbia, R. B.;Balgos, M. H. M.;Mangila, N. S.;Tumanguil, M. A. C.;Estacio, E. S.;Salvador, A. A.;Somintac, A. S.;
12:261:2 Pulsed terahertz emission from GaN/InN heterostructure
DOI:10.1063/1.3663527 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Reklaitis, Antanas;
12:261:3 Crossover between surface field and photo-Dember effect induced terahertz emission
DOI:10.1063/1.3580331 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Reklaitis, Antanas;
12:261:4 Terahertz emission from InAs induced by photo-Dember effect: Hydrodynamic analysis and Monte Carlo simulations
DOI:10.1063/1.3467526 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Reklaitis, Antanas;
12:261:5 Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure
DOI:10.1063/1.3561642 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Lisauskas, A.;Reklaitis, A.;Venckevicius, R.;Kasalynas, I.;Valusis, G.;Grigaliunaite-Vonseviciene, G.;Maestre, H.;Schmidt, J.;Blank, V.;Thomson, M. D.;Roskos, H. G.;Koehler, K.;
12:261:6 The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide
DOI:10.1063/1.4730954 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Cortie, D. L.;Lewis, R. A.;
12:261:7 Enhanced THz emission from c-plane InxGa1-xN due to piezoelectric field-induced electron transport
DOI:10.1063/1.4707387 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Woodward, Nathaniel;Gallinat, C.;Rodak, L. E.;Metcalfe, G. D.;Shen, H.;Wraback, M.;
12:261:8 Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures
DOI:10.1063/1.4799060 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Tsuruta, Shuichi;Takeuchi, Hideo;Yamada, Hisashi;Hata, Masahiko;Nakayama, Masaaki;
12:261:9 Theoretical analysis of conditions for observation of plasma oscillations in semiconductors from pulsed terahertz emission
DOI:10.1063/1.4894163 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Reklaitis, Antanas;
12:261:10 Role of vanguard counter-potential in terahertz emission due to surface currents explicated by three-dimensional ensemble Monte Carlo simulation
DOI:10.1103/PhysRevB.84.155328 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Cortie, D. L.;Lewis, R. A.;
12:261:11 Role of vanguard counter-potential in terahertz emission due to surface currents explicated by three-dimensional ensemble Monte Carlo simulation (vol 84, 155328, 2011)
DOI:10.1103/PhysRevB.85.159901 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Cortie, D. L.;Lewis, R. A.;
12:261:12 Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the i-GaAs layer of an i-GaAs/n-GaAs epitaxial structure
DOI:10.1063/1.3603046 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Takeuchi, Hideo;Tsuruta, Syuichi;Nakayama, Masaaki;
12:261:13 New non-linear photovoltaic effect in uniform bipolar semiconductor
DOI:10.1063/1.4901871 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Volovichev, I.;
12:262:1 Efficient terahertz emission from InAs nanowires
DOI:10.1103/PhysRevB.84.115421 JN:PHYSICAL REVIEW B PY:2011
TC:21 AU: Seletskiy, Denis V.;Hasselbeck, Michael P.;Cederberg, Jeffrey G.;Katzenmeyer, Aaron;Toimil-Molares, Maria E.;Leonard, Francois;Talin, A. Alec;Sheik-Bahae, Mansoor;
12:262:2 Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
DOI:10.1063/1.4791570 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: John Ibanes, Jasher;Herminia Balgos, Ma;Jaculbia, Rafael;Salvador, Arnel;Somintac, Armando;Estacio, Elmer;Que, Christopher T.;Tsuzuki, Satoshi;Yamamoto, Kohji;Tani, Masahiko;
12:262:3 Kinetic theory of surface plasmon polariton in semiconductor nanowires
DOI:10.1103/PhysRevB.87.165412 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Yin, Y.;Wu, M. W.;
12:262:4 Terahertz generation by GaAs nanowires
DOI:10.1063/1.4818719 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Trukhin, V. N.;Buyskikh, A. S.;Kaliteevskaya, N. A.;Bourauleuv, A. D.;Samoilov, L. L.;Samsonenko, Yu. B.;Cirlin, G. E.;Kaliteevski, M. A.;Gallant, A. J.;
12:262:5 Giant enhancement of terahertz emission from nanoporous GaP
DOI:10.1063/1.4901903 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Atrashchenko, A.;Arlauskas, A.;Adomavicius, R.;Korotchenkov, A.;Ulin, V. P.;Belov, P.;Krotkus, A.;Evtikhiev, V. P.;
12:262:6 The effect of structural and chemical bonding changes on the optical properties of Si/Si1-xCx core/shell nanowires
DOI:10.1039/c3tc30906a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Lee, Woo-Jung;Ma, Jin Won;Bae, Jung Min;Jeong, Kwang-Sik;Cho, Mann-Ho;Lee, Chul;Choi, Eun Jip;Kang, Chul;
12:262:7 Room-temperature ferromagnetism and terahertz emission of Mn-doped InGaAs and GaAsSb nanowires
DOI:10.1088/0957-4484/21/43/435703 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Kong, Kang Jun;Jung, Chan Su;Jung, Gyeong Bok;Cho, Yong Jae;Kim, Han Sung;Park, Jeunghee;Yu, Nan Ei;Kang, Chul;
12:262:8 Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si1-x-yGexCy on (100) Si
DOI:10.1063/1.3284937 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Wasyluk, Joanna;Perova, Tatiana S.;Meyer, Francoise;
12:263:1 Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature
DOI:10.1021/nn1030274 JN:ACS NANO PY:2011
TC:17 AU: Moutanabbir, Oussama;Senz, Stephan;Scholz, Roland;Alexe, Marin;Kim, Yunseok;Pippel, Eckhard;Wang, Yewu;Wiethoff, Christian;Nabbefeld, Tobias;Heringdorf, Frank Meyer Zu;Horn-von Hoegen, Michael;
12:263:2 Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology
DOI:10.1016/j.jcrysgro.2011.12.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Kohen, David;Cayron, Cyril;De Vito, Eric;Tileli, Vasiliki;Faucherand, Pascal;Morin, Christine;Brioude, Arnaud;Perraud, Simon;
12:263:3 Preparation of nanowire specimens for laser-assisted atom probe tomography
DOI:10.1088/0957-4484/25/43/435704 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Blumtritt, H.;Isheim, D.;Senz, S.;Seidman, D. N.;Moutanabbir, O.;
12:263:4 Growth and electrical properties of Al-catalyzed Si nanowires
DOI:10.1063/1.3544933 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Choi, Seok-Youl;Fung, Wayne Y.;Lu, Wei;
12:263:5 Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst
DOI:10.1088/0957-4484/23/21/215205 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Eichfeld, Chad M.;Gerstl, Stephan S. A.;Prosa, Ty;Ke, Yue;Redwing, Joan M.;Mohney, Suzanne E.;
12:263:6 Patterned growth of high aspect ratio silicon wire arrays at moderate temperature
DOI:10.1016/j.jcrysgro.2011.02.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Morin, Christine;Kohen, David;Tileli, Vasiliki;Faucherand, Pascal;Levis, Michel;Brioude, Arnaud;Salem, Bassem;Baron, Thierry;Perraud, Simon;
12:263:7 Single-crystal Al-catalyzed Si nanowires grown via hedgehog-shaped Al-Si aggregates
DOI:10.1016/j.apsusc.2009.09.106 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Jung, Jin-Young;Jee, Sang-Won;Lee, Jung-Ho;
12:263:8 The second revolution in atom probe tomography
DOI:10.1557/mrs.2012.3 JN:MRS BULLETIN PY:2012
TC:10 AU: Kelly, Thomas F.;Larson, David J.;
12:263:9 Control of defects in a novel aluminum-induced heteroepitaxial growth of AlxGa1-xP nanocrystals on silicon nanowires
DOI:10.1016/j.scriptamat.2014.06.026 JN:SCRIPTA MATERIALIA PY:2014
TC:0 AU: Zhou, Qingwei;Zhang, Zhang;Senz, Stephan;Zhao, Fuli;Chen, Lijun;Lu, Xubing;Gao, Xingsen;Liu, Junming;
12:264:1 Highly Luminescent Polystyrene Embedded CdSe Quantum Dots Obtained through a Modified Colloidal Synthesis Route
DOI:10.1007/s13391-012-1108-0 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:9 AU: Stan, Corneliu S.;Secula, Marius S.;Sibiescu, Doina;
12:264:2 Solution-Liquid-Solid Growth of Semiconductor Quantum-Wire Films
DOI:10.1021/nn201336z JN:ACS NANO PY:2011
TC:14 AU: Wang, Fudong;Wayman, Virginia L.;Loomis, Richard A.;Buhro, William E.;
12:264:3 Charge trapping in hybrid electroluminescence device containing CdSe/ZnS quantum dots embedded in a conducting poly(N-vinylcarbozole) layer
DOI:10.1063/1.3479528 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Li, Fushan;Guo, Tailiang;Kim, Taewhan;
12:264:4 Influence of Excitation Wavelength on Photoluminescence Properties of CdSe/CdZnS Colloidal Quantum Dots on Micro-Patterned Silver Films
DOI:10.1007/s13391-013-3134-y JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Khan, Rizwan;Jeon, Ju-Won;Jang, Lee-Woon;Kim, Min-Kyu;Ko, Eun-Yee;Lee, Joo-In;Lee, In-Hwan;
12:264:5 Ligand exchange leads to efficient triplet energy transfer to CdSe/ZnS Q-dots in a poly(N-vinylcarbazole) matrix nanocomposite
DOI:10.1063/1.4793266 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Khetubol, Adis;Van Snick, Sven;Hassinen, Antti;Fron, Eduard;Firdaus, Yuliar;Pandey, Lesley;David, Charlotte C.;Duerinckx, Karel;Dehaen, Wim;Hens, Zeger;Van der Auweraer, Mark;
12:264:6 Organic light-emitting devices fabricated utilizing core/shell CdSe/ZnS quantum dots embedded in a polyvinylcarbazole
DOI:10.1007/s10853-010-4903-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:13 AU: Lee, Kwang Seop;Lee, Dea Uk;Choo, Dong Chul;Kim, Tae Whan;Ryu, Eui Dock;Kim, Sang Wook;Lim, Jong Sun;
12:264:7 Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure
DOI:10.1007/s13391-013-6008-4 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Kim, Jiwan;Park, Yu Jin;Kim, Yohan;Kim, Yong-Hoon;Han, Chul Jong;Han, Jeong In;Oh, Min Suk;
12:264:8 Transparent and highly luminescent Eu-oxide thin film phosphors on sapphire substrates
DOI:10.1007/s13391-013-3175-2 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Chae, Ki-Woong;Park, Ta-Ryeong;Cheon, Chae Il;Cho, Nam In;Kim, Jeong Seog;
12:264:9 Study of hole mobility in poly(N-vinylcarbazole) films doped with CdSe/ZnS quantum dots encapsulated by 11-(N-carbazolyl) undecanoic acid (C11)
DOI:10.1063/1.4827395 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Khetubol, Adis;Hassinen, Antti;Firdaus, Yuliar;Vanderlinden, Willem;Van Snick, Sven;Flamee, Stijn;Li, Bing;De Feyter, Steven;Hens, Zeger;Dehaen, Wim;Van der Auweraer, Mark;
12:265:1 Single-step growth dynamics of core-shell GaN on Ga2O3 freestanding nanoprotruded microbelts
DOI:10.1007/s10853-011-6192-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:6 AU: Sahoo, Prasana;Basu, Joysurya;Dhara, Sandip;Fang, Hsin Chiao;Liu, Chuan-Pu;Ravindran, T. R.;Dash, Sitaram;Tyagi, Ashok Kumar;
12:265:2 Photo-induced tunable local oxidation and fragmentation in Pt ultra-nanoclusters functionalized GaN nanotubes
DOI:10.1007/s11051-012-1103-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:2 AU: Sahoo, Prasana;Dhara, S.;Dash, S.;Tyagi, A. K.;
12:265:3 Anti-reflective and hydrophobic surface of self-organized GaN nano-flowers
DOI:10.1016/j.apsusc.2011.06.080 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Dhamodaran, S.;Chander, D. Sathish;Ramkumar, J.;
12:265:4 Epitaxial synthesis of GaN/Ga2O3 core/shell nanocable heterostructures by atmosphere control
DOI:10.1016/j.actamat.2010.05.006 JN:ACTA MATERIALIA PY:2010
TC:5 AU: Lee, Sanghun;Ham, Moon-Ho;Myoung, Jae-Min;Lee, Woong;
12:265:5 Air trapped nanocavity induced superhydrophobicity on GaN microbelt
DOI:10.1063/1.3541877 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Sahoo, Prasana;Dhara, S.;Dash, S.;Raj, Baldev;Manna, I.;Tyagi, A. K.;
12:265:6 Role of entrapped vapor bubbles during microdroplet evaporation
DOI:10.1063/1.4745009 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Putnam, Shawn A.;Byrd, Larry W.;Briones, Alejandro M.;Hanchak, Michael S.;Ervin, Jamie S.;Jones, John G.;
12:265:7 Melting and superheating of nanowires-a nanotube approach
DOI:10.1088/0957-4484/21/20/205701 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Sar, Dillip Kumar;Nanda, Karuna Kar;
12:265:8 The effect of the averaged structural and energetic features on the cohesive energy of nanocrystals
DOI:10.1007/s11051-010-9853-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:4 AU: Safaei, Ali;
12:265:9 Size-dependent melting point of nanoparticles based on bond number calculation
DOI:10.1016/j.matchemphys.2012.11.016 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:6 AU: Li, H.;Han, P. D.;Zhang, X. B.;Li, M.;
12:265:10 Cohesive energy and physical properties of nanocrystals
DOI:10.1080/14786435.2010.548836 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:3 AU: Safaei, A.;
12:265:11 Cavitation-induced ignition of cryogenic hydrogen-oxygen fluids
DOI:10.1063/1.3571445 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Osipov, V. V.;Muratov, C. B.;Ponizovskaya-Devine, E.;Foygel, M.;Smelyanskiy, V. N.;
12:266:1 A Route to High-Quality Crystalline Coaxial Core/Multishell Ge@Si(GeSi)(n) and Si@(GeSi)(n) Nanowire Heterostructures
DOI:10.1002/adma.200902815 JN:ADVANCED MATERIALS PY:2010
TC:17 AU: Ben-Ishai, Moshit;Patolsky, Fernando;
12:266:2 Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices
DOI:10.1021/ja411050r JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:5 AU: Kempa, Thomas J.;Kim, Sun-Kyung;Day, Robert W.;Park, Hong-Gyu;Nocera, Daniel G.;Lieber, Charles M.;
12:266:3 Magnetic field induced shell-to-core confinement transition in type-II semiconductor quantum wires
DOI:10.1063/1.4802588 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Macedo, R.;Costa e Silva, J.;Chaves, A.;Farias, G. A.;Ferreira, R.;
12:266:4 Misfit-Guided Self-Organization of Anticorrelated Ge Quantum Dot Arrays on Si Nanowires
DOI:10.1021/nl302190e JN:NANO LETTERS PY:2012
TC:5 AU: Kwon, Soonshin;Chen, Zack C. Y.;Kim, Ji-Hun;Xiang, Jie;
12:266:5 Controlling the interface composition of core-shell and axial heterojunction nanowires
DOI:10.1063/1.4752251 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Vastola, G.;Shenoy, V. B.;Zhang, Y. -W.;
12:266:6 Growth of Ge-Si nanowire heterostructures via chemical vapor deposition
DOI:10.1016/j.tsf.2011.02.005 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Li, C. B.;Usami, K.;Mizuta, H.;Oda, S.;
12:267:1 High temperature electron transport properties in AlGaN/GaN heterostructures
DOI:10.1063/1.3514079 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Tokuda, H.;Yamazaki, J.;Kuzuhara, M.;
12:267:2 Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
DOI:10.1063/1.3456008 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Lisesivdin, S. B.;Yildiz, A.;Balkan, N.;Kasap, M.;Ozcelik, S.;Ozbay, E.;
12:267:3 Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures
DOI:10.1063/1.4813866 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Asgari, A.;Faraone, L.;
12:267:4 Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride
DOI:10.1007/s00339-012-7451-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Wang, Shulong;Liu, Hongxia;Fan, Jibin;Ma, Fei;Lei, Xiaoyi;
12:267:5 Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K
DOI:10.1063/1.3456560 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Tokuda, H.;Kodama, K.;Kuzuhara, M.;
12:267:6 The role of ultrathin AIN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors
DOI:10.1063/1.3481349 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Wang, L.;Hu, W. D.;Chen, X. S.;Lu, W.;
12:267:7 The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
DOI:10.1016/j.tsf.2013.11.114 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Tulek, R.;Arslan, E.;Bayrakli, A.;Turhan, S.;Gokden, S.;Duygulu, O.;Kaya, A. A.;Firat, T.;Teke, A.;Ozbay, E.;
12:267:8 SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
DOI:10.1063/1.3696641 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Asgari, A.;Faraone, L.;
12:267:9 Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier
DOI:10.1016/j.tsf.2010.04.120 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Lisesivdin, S. B.;Tasli, P.;Kasap, M.;Ozturk, M.;Arslan, E.;Ozcelik, S.;Ozbay, E.;
12:268:1 Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
DOI:10.1016/j.tsf.2012.08.010 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Agrawal, M.;Dharmarasu, N.;Radhakrishnan, K.;Ravikiran, L.;
12:268:2 Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
DOI:10.1063/1.4822031 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ravikiran, L.;Radhakrishnan, K.;Dharmarasu, N.;Agrawal, M.;Basha, S. Munawar;
12:268:3 Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3518717 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Radhakrishnan, K.;Dharmarasu, N.;Sun, Z.;Arulkumaran, S.;Ng, G. I.;
12:268:4 Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
DOI:10.1116/1.3385672 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:7 AU: Lin, Kung-Liang;Chang, Edward-Yi;Hsiao, Yu-Lin;Huang, Wei-Ching;Luong, Tien-Tung;Wong, Yuen-Yee;Li, Tingkai;Tweet, Doug;Chiang, Chen-Hao;
12:268:5 Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy
DOI:10.1116/1.4873996 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Hoke, William E.;Kennedy, Theodore D.;Torabi, Abbas;Lyman, Peter S.;Howsare, C. Alan;Schultz, Brian D.;
12:268:6 Synthesis of high Al content AlxGa1-xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma
DOI:10.1016/j.jallcom.2014.07.090 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Cai, Hua;You, Qinghu;Hu, Zhigao;Guo, Shuang;Yang, Xu;Sun, Jian;Xu, Ning;Wu, Jiada;
12:268:7 Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.164 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Agrawal, M.;Dharmarasu, N.;Radhakrishnan, K.;Ravikiran, L.;
12:268:8 Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes
DOI:10.1016/j.jcrysgro.2010.11.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Tang, H.;Baribeau, J. -M.;Aers, G. C.;Fraser, J.;Rolfe, S.;Bardwell, J. A.;
12:268:9 The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate
DOI:10.1016/j.jcrysgro.2012.10.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Lin, Jyun-Hao;Huang, Shyh-Jer;Su, Yan-Kuin;Hsu, Chao-Wei;
12:268:10 AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy
DOI:10.1116/1.3549889 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:8 AU: Hoke, W. E.;Kennedy, T. D.;Mosca, J. J.;Kerr, A. J.;Torabi, A.;Davis-Hearns, S.;LaRoche, J. R.;
12:268:11 pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.mssp.2013.07.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Yusoff, M. Z. Mohd;Hassan, Z.;Ahmed, Naser M.;Abu Hassan, H.;Abdullah, M. J.;Rashid, M.;
12:268:12 Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
DOI:10.1116/1.3665220 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:9 AU: Hoke, W. E.;Chelakara, R. V.;Bettencourt, J. P.;Kazior, T. E.;LaRoche, J. R.;Kennedy, T. D.;Mosca, J. J.;Torabi, A.;Kerr, A. J.;Lee, H. -S.;Palacios, T.;
12:269:1 Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots
DOI:10.1063/1.4882075 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Singh, S. D.;Porwal, S.;Mondal, Puspen;Srivastava, A. K.;Mukherjee, C.;Dixit, V. K.;Sharma, T. K.;Oak, S. M.;
12:269:2 Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells
DOI:10.1063/1.3486470 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Singh, S. D.;Dixit, V. K.;Porwal, S.;Kumar, Ravi;Srivastava, A. K.;Ganguli, Tapas;Sharma, T. K.;Oak, S. M.;
12:269:3 Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures
DOI:10.1063/1.4758472 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Singh, S. D.;Porwal, S.;Sharma, T. K.;Oak, S. M.;
12:269:4 Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film
DOI:10.1063/1.4887280 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yang, S.;Hsu, H. C.;Liu, W-R.;Lin, B. H.;Kuo, C. C.;Hsu, C-H.;Eriksson, M. O.;Holtz, P. O.;Hsieh, W. F.;
12:269:5 Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices
DOI:10.1063/1.3671630 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Singh, S. D.;Porwal, S.;Srivastava, A. K.;Sharma, T. K.;Oak, S. M.;
12:269:6 Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy
DOI:10.1063/1.3638705 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Ivanov, Ts.;Donchev, V.;Germanova, K.;Gomes, P. F.;Iikawa, F.;Brasil, M. J. S. P.;Cotta, M. A.;
12:269:7 Conduction band offset and quantum states probed by capacitance-voltage measurements for InP/GaAs type-II ultrathin quantum wells
DOI:10.1063/1.3561433 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Singh, S. D.;Dixit, V. K.;Khamari, Shailesh K.;Kumar, Ravi;Srivastava, A. K.;Ganguli, Tapas;Oak, S. M.;
12:269:8 Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts
DOI:10.1088/0957-4484/22/6/065703 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Iikawa, F.;Donchev, V.;Ivanov, Ts;Dias, G. O.;Tizei, L. H. G.;Lang, R.;Heredia, E.;Gomes, P. F.;Brasil, M. J. S. P.;Cotta, M. A.;Ugarte, D.;Martinez Pastor, J. P.;de Lima, M. M., Jr.;Cantarero, A.;
12:270:1 Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN
DOI:10.1016/j.apsusc.2011.11.114 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Song, Keun Man;Kim, Jong Min;Kang, Bong Kyun;Shin, Chan Soo;Ko, Chul Gi;Kong, Bo Hyun;Cho, Hyung Koun;Yoon, Dae Ho;Kim, Hogyoung;Hwang, Sung Min;
12:270:2 The effects of substrate nitridation on the growth of nonpolar alpha-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
DOI:10.1016/j.apsusc.2014.04.069 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Zhang, Jun;Tian, Wu;Wu, Feng;Wan, Qixin;Wang, Zhujuan;Zhang, Jin;Li, Yulian;Dai, Jiangnan;Fang, Yanyan;Wu, Zhihao;Chen, Changqing;Xu, Jintong;Li, Xiangyang;
12:270:3 Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.09.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:12 AU: Song, Keun-Man;Kim, Jong-Min;Lee, Dong-Hun;Kang, Dae-Hun;Park, Won-Kyu;Shin, Chan-Soo;Ko, Chul-Gi;Hwang, Sung-Min;Yoon, Dae-Ho;
12:270:4 S-parameter and perfect pinning of the Fermi level at nonpolar (11-20) a-plane p-GaN surfaces
DOI:10.1063/1.4755839 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Choi, Yunju;Song, Keun Man;Kim, Hyunsoo;
12:270:5 Modulation of anisotropic crystalline in a-plane GaN on HT-AlN buffer layer
DOI:10.1016/j.apsusc.2012.02.006 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Long, H.;Yu, T. J.;Fang, H.;Yang, Z. J.;Zhang, G. Y.;
12:270:6 Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
DOI:10.1016/j.jcrysgro.2009.11.059 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Chang, Shih-Pang;Yang, Hung-Chih;Lu, Tien-Chang;Kuo, Hao-Chung;Wang, Shing-Chung;
12:270:7 Surface Fermi level pinning and carrier transport of indium-tin-oxide Ohmic contact to p-type GaN
DOI:10.1016/j.jallcom.2012.03.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Choi, Yunju;Kim, Hyunsoo;
12:270:8 Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire
DOI:10.1016/j.jcrysgro.2011.01.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Lee, Sung-Nam;Kim, Jihoon;Kim, Hyunsoo;
12:270:9 The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers
DOI:10.1016/j.jcrysgro.2010.08.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Kang, B. K.;Kang, S. M.;Song, K. M.;Yoon, D. H.;
12:270:10 Surface states and carrier transport properties at semipolar (11-22) n-type GaN planes
DOI:10.1063/1.4802264 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Jung, Sungmin;Lee, Sung-Nam;Kim, Hyunsoo;
12:270:11 Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD
DOI:10.1016/j.apsusc.2010.07.097 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Jia, Tingting;Zhou, Shengming;Teng, Hao;Lin, Hui;Wang, Jun;Liu, Jianqi;Qiu, Yongxin;Huang, Jun;Huang, Kai;Bao, Feng;Xu, Ke;
12:270:12 MOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrate
DOI:10.1016/j.jcrysgro.2010.08.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Yu, Hongbo;Ozturk, Mustafa;Demirel, Pakize;Cakmaka, Huseyin;Ozbay, Ekmel;
12:270:13 Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.03.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Kim, Jongmin;Song, Keun Man;Bae, Seong Ju;Shin, Chan Soo;Ko, Chul Gi;Kong, Bo Hyun;Cho, Hyung Koun;
12:270:14 Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification
DOI:10.1016/j.matlet.2012.11.104 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Song, Keun-Man;Kang, Dae-Hun;Shin, Chan-Soo;Kim, Hogyoung;Kim, Jong-Min;
12:271:1:1 Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire
DOI:10.1016/j.jcrysgro.2009.11.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:14 AU: Kappers, M. J.;Moram, M. A.;Rao, D. V. Sridhara;McAleese, C.;Humphreys, C. J.;
12:271:1:2 Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
DOI:10.1010/j.jcysgro.2014.10.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Li, Xiao-Hang;Wei, Yong O.;Wang, Shuo;Xie, Hongen;Mao, Tsung-Ting;Satter, Md. Mahbub;Shen, Shyh-Chiang;Yoder, P. Douglas;Detchprohm, Theeradetch;Dupuis, Russell D.;Fischer, Alec M.;Ponce, Fernando A.;
12:271:1:3 AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers
DOI:10.1016/j.jcrysgro.2013.08.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Li, Haoning;Sadler, Thomas C.;Parbrook, Peter J.;
12:271:1:4 Growth of aluminium nitride with linear change of ammonia flow
DOI:10.1016/j.jcysgro.2014.11.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Caban, Piotr;Rudzinski, Mariusz;Wojcik, Marek;Gaca, Jaroslaw;Strupinski, Wlodek;
12:271:1:5 The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies
DOI:10.1007/s11664-010-1177-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:4 AU: Moram, M. A.;Gabbai, U. E.;Sadler, T. C.;Kappers, M. J.;Oliver, R. A.;
12:271:2:1 Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach
DOI:10.1016/j.jcrysgro.2010.07.064 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Dauelsberg, M.;Brien, D.;Puesche, R.;Schoen, O.;Yakovlev, E. V.;Segal, A. S.;Talalaev, R. A.;
12:271:2:2 HCl-assisted growth of GaN and AlN
DOI:10.1016/j.jcrysgro.2012.10.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Fahle, D.;Brien, D.;Dauelsberg, M.;Strauch, G.;Kalisch, H.;Heuken, M.;Vescan, A.;
12:271:2:3 In-situ decomposition and etching of AIN and GaN in the presence of HCI
DOI:10.1016/j.jcrysgre.2013.09.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Fahle, Dirk;Kruecken, Thomas;Dauelsberg, Martin;Kalisch, Holger;Heuken, Michael;Vescan, Andrei;
12:271:2:4 High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system
DOI:10.1016/j.jcrysgro.2012.10.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Ubukata, Akinori;Yano, Yoshiki;Shimamura, Hayato;Yamaguchi, Akira;Tabuchi, Toshiya;Matsumoto, Koh;
12:271:3:1 Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate
DOI:10.1016/j.jcrysgro.2010.09.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Hoffmann, V.;Knauer, A.;Brunner, C.;Einfeldt, S.;Weyers, M.;Traenkle, G.;Haberland, K.;Zettler, J. -T.;Kneissl, M.;
12:271:3:2 Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing
DOI:10.1016/j.jcrysgro.2012.08.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Aida, Hideo;Aota, Natsuko;Takeda, Hidetoshi;Koyama, Koji;
12:271:3:3 Growth pressure dependence of optical and structural properties of a-plane InGaN/GaN multi-quantum wells on r-plane sapphire
DOI:10.1016/j.jcrysgro.2011.11.060 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Song, Keun-Man;Kim, Jong-Min;Shin, Chan-Soo;Hwang, Sung-Min;Seo, Yong-Gon;Kong, Bo-Hyun;Cho, Hyung-Koun;Yoon, Dae-Ho;
12:271:3:4 Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.06.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Koyama, Koji;Aida, Hideo;Kim, Seong-Woo;Ikejiri, Kenjiro;Doi, Toshiro;Yamazaki, Tsutomu;
12:272:1 Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
DOI:10.1063/1.3536480 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Li, Dabing;Sun, Xiaojuan;Song, Hang;Li, Zhiming;Chen, Yiren;Miao, Guoqing;Jiang, Hong;
12:272:2 Scanning tunneling microscopy and spectroscopy of the electronic structure of dislocations in GaN/Si(111) grown by molecular-beam epitaxy
DOI:10.1063/1.3319512 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Chiu, Ya-Ping;Chen, Bo-Chih;Huang, Bo-Chao;Shih, Min-Chuan;Tu, Li-Wei;
12:272:3 Optical properties of edge dislocations on (1(1)over-bar00) prismatic planes in wurtzite ZnO introduced at elevated temperatures
DOI:10.1063/1.4725426 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Ohno, Y.;Tokumoto, Y.;Yonenaga, I.;Fujii, K.;Yao, T.;
12:272:4 Optical and electrical properties of dislocations in plastically deformed GaN
DOI:10.1016/j.jcrysgro.2014.06.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Yonenaga, I.;Ohno, Y.;Yao, T.;Edagawa, K.;
12:272:5 Structural and optical characterization of AlGaN/GaN layers
DOI:10.1016/j.jcrysgro.2014.03.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Jayasakthi, M.;Ramesh, R.;Arivazhagan, P.;Loganathan, R.;Prabakaran, K.;Balaji, M.;Baskar, K.;
12:272:6 Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics
DOI:10.1016/j.jcrysgro.2013.10.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Chen, Zi-Min;Zheng, Zhi-Yuan;Chen, Ying-Da;Wu, Hua-Long;Tong, Cun-Sheng;Wang, Gang;Wu, Zhi-Sheng;Jiang, Hao;
12:272:7 Optical properties of fresh dislocations in GaN
DOI:10.1016/j.jcrysgro.2010.10.060 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Yonenaga, I.;Ohno, Y.;Taishi, T.;Tokumoto, Y.;Makino, H.;Yao, T.;Kamimura, Y.;Edagawa, K.;
12:272:8 Influence of GaN template thickness and morphology on AlxGa1-xN luminescence properties
DOI:10.1016/j.optmat.2012.12.009 JN:OPTICAL MATERIALS PY:2013
TC:3 AU: Halidou, I.;Toure, A.;Nguyen, L.;Bchetnia, A.;El Jani, B.;
12:272:9 Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE
DOI:10.1016/j.jcrysgro.2009.09.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Rice, A.;Collazo, R.;Tweedie, J.;Xie, J.;Mita, S.;Sitar, Z.;
12:272:10 Slip systems in wurtzite ZnO activated by Vickers indentation on {2(1)over-bar (1)over-bar0} and {10(1)over-bar0} surfaces at elevated temperatures
DOI:10.1010/j.jo-vsgro.2013.11.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Ohno, Y.;Koizumi, H.;Tokumoto, Y.;Kutsukake, K.;Taneichi, H.;Yonenaga, I.;
12:273:1 Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching
DOI:10.1007/s10853-012-6936-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Liu, Kong;Qu, Shengchun;Zhang, Xinhui;Wang, Zhanguo;
12:273:2 Hydroxyapatite formation on metallurgical grade nanoporous silicon particles
DOI:10.1007/s10853-010-4745-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:6 AU: Chadwick, E. G.;Clarkin, O. M.;Tanner, D. A.;
12:273:3 High order symmetry interference lithography based nanoimprint
DOI:10.1063/1.3530729 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Letailleur, Alban A.;Nomenyo, Komla;Mc Murtry, Stefan;Barthel, Etienne;Sondergard, Elin;Lerondel, Gilles;
12:273:4 Simple fabrication of ultrahigh aspect ratio nanostructures for enhanced antireflectivity
DOI:10.1116/1.4869302 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Dominguez, Sagrario;Cornago, Ignacio;Bravo, Javier;Perez-Conde, Jesus;Choi, Hyungryul J.;Kim, Jeong-Gil;Barbastathis, George;
12:273:5 Tapered and aperiodic silicon nanostructures with very low reflectance for solar hydrogen evolution
DOI:10.1063/1.4754614 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Tan, Siah Hong;Soh, Chew Beng;Wang, Wei;Chua, Soo Jin;Chi, Dongzhi;
12:273:6 Chemorheology of Sol-Gel Silica for the Patterning of High Aspect Ratio Structures by Nanoimprint
DOI:10.1021/cm100285b JN:CHEMISTRY OF MATERIALS PY:2010
TC:13 AU: Letailleur, Alban;Teisseire, Jeremie;Chemin, Nicolas;Barthel, Etienne;Sondergard, Elin;
12:273:7 Ultralow broadband optical reflection of silicon nanostructured surfaces coupled with antireflection coating
DOI:10.1007/s10853-011-6157-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Liu, Yan;Hong, Minghui;
12:273:8 Microstructural characterisation of metallurgical grade porous silicon nanosponge particles
DOI:10.1007/s10853-011-6060-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Chadwick, E. G.;Beloshapkin, S.;Tanner, D. A.;
12:273:9 Light localization in photonic band gaps of quasiperiodic dielectric structures
DOI:10.1103/PhysRevB.82.045119 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Wang, Kang;
12:273:10 Effective recombination velocity of textured surfaces
DOI:10.1063/1.3396078 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Xiong, Kanglin;Lu, Shulong;Jiang, Desheng;Dong, Jianrong;Yang, Hui;
12:273:11 Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction
DOI:10.1016/j.mssp.2011.02.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:1 AU: Wu, Yue;Zhang, Gengmin;Xi, Zhonghe;
12:274:1 Super-selective cryogenic etching for sub-10 nm features
DOI:10.1088/0957-4484/24/1/015305 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Liu, Zuwei;Wu, Ying;Harteneck, Bruce;Olynick, Deirdre;
12:274:2 Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching
DOI:10.1002/adma.201301555 JN:ADVANCED MATERIALS PY:2013
TC:5 AU: Zanchetta, Erika;Della Giustina, Gioia;Grenci, Gianluca;Pozzato, Alessandro;Tormen, Massimo;Brusatin, Giovanna;
12:274:3 Step and repeat UV nanoimprint lithography on pre-spin coated resist film: a promising route for fabricating nanodevices
DOI:10.1088/0957-4484/21/44/445301 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Peroz, C.;Dhuey, S.;Volger, M.;Wu, Y.;Olynick, D.;Cabrini, S.;
12:274:4 Fabrication of silicon nanostructures with large taper angle by reactive ion etching
DOI:10.1116/1.4901420 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Saffih, Faycal;Con, Celal;Alshammari, Alanoud;Yavuz, Mustafa;Cui, Bo;
12:274:5 Single digit nanofabrication by step-and-repeat nanoimprint lithography
DOI:10.1088/0957-4484/23/1/015305 JN:NANOTECHNOLOGY PY:2012
TC:19 AU: Peroz, C.;Dhuey, S.;Cornet, M.;Vogler, M.;Olynick, D.;Cabrini, S.;
12:274:6 One-step patterning of double tone high contrast and high refractive index inorganic spin-on resist
DOI:10.1063/1.4893724 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Zanchetta, E.;Della Giustina, G.;Brusatin, G.;
12:274:7 Precision plasma etching of Si, Ge, and Ge: P by SF6 with added O-2
DOI:10.1116/1.4868615 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Wongwanitwattana, Chalermwat;Shah, Vishal A.;Myronov, Maksym;Parker, Evan H. C.;Whall, Terry;Leadley, David R.;
12:274:8 Obtaining nanoimprint template gratings with 10 nm half-pitch by atomic layer deposition enabled spacer double patterning
DOI:10.1088/0957-4484/24/10/105303 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Dhuey, S.;Peroz, C.;Olynick, D.;Calafiore, G.;Cabrini, S.;
12:274:9 Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (vol 25, pg 6261, 2013)
DOI:10.1002/adma.201303707 JN:ADVANCED MATERIALS PY:2014
TC:0 AU: Zanchetta, Erika;Della Giustina, Gioia;Grenci, Gianluca;Pozzato, Alessandro;Tormen, Massimo;Brusatin, Giovanna;
12:275:1 Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
DOI:10.1063/1.4813598 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Brochen, Stephane;Brault, Julien;Chenot, Sebastien;Dussaigne, Amelie;Leroux, Mathieu;Damilano, Benjamin;
12:275:2 Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes
DOI:10.1063/1.4904272 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Malinverni, M.;Lamy, J. -M.;Martin, D.;Feltin, E.;Dorsaz, J.;Castiglia, A.;Rossetti, M.;Duelk, M.;Velez, C.;Grandjean, N.;
12:275:3 Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes
DOI:10.1063/1.3593964 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Castiglia, A.;Carlin, J. -F.;Grandjean, N.;
12:275:4 Effects of growth conditions on the acceptor activation of Mg-doped p-GaN
DOI:10.1016/j.matchemphys.2012.01.128 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:8 AU: Ke, Wen-Cheng;Lee, Shuo-Jen;Chen, Shiow-Long;Kao, Chia-Yu;Houng, Wei-Chung;
12:275:5 p-type GaN grown by phase shift epitaxy
DOI:10.1063/1.4861058 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhong, M.;Roberts, J.;Kong, W.;Brown, A. S.;Steckl, A. J.;
12:275:6 Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.07.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Iida, Daisuke;Tamura, Kenta;Iwaya, Motoaki;Kamiyama, Satoshi;Amano, Hiroshi;Akasaki, Isamu;
12:275:7 Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
DOI:10.1063/1.4819171 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Hardy, Matthew T.;Holder, Casey O.;Feezell, Daniel F.;Nakamura, Shuji;Speck, James S.;Cohen, Daniel A.;DenBaars, Steven P.;
12:275:8 Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
DOI:10.1007/s00339-014-8384-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Zhang, Kexiong;Liang, Hongwei;Shen, Rensheng;Song, Shiwei;Wang, Dongsheng;Liu, Yang;Xia, Xiaochuan;Yang, Dechao;Luo, Yingmin;Du, Guotong;
12:275:9 Evolution of femtosecond laser-induced damage in doped GaN thin films
DOI:10.1007/s00339-013-8103-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Grinys, Tomas;Dmukauskas, Mantas;Sciuka, Mindaugas;Nargelas, Saulius;Melninkaitis, Andrius;
12:275:10 Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy (vol 103, 032102, 2013)
DOI:10.1063/1.4858978 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Brochen, Stephane;Brault, Julien;Chenot, Sebastien;Dussaigne, Amelie;Leroux, Mathieu;Damilano, Benjamin;
12:276:1 Ambipolar diffusion of photoexcited carriers in bulk GaAs
DOI:10.1063/1.3533664 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Ruzicka, Brian A.;Werake, Lalani K.;Samassekou, Hassana;Zhao, Hui;
12:276:2 Imaging ambipolar diffusion of photocarriers in GaAs thin films
DOI:10.1063/1.4730396 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Paget, D.;Cadiz, F.;Rowe, A. C. H.;Moreau, F.;Arscott, S.;Peytavit, E.;
12:276:3 Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation
DOI:10.1063/1.4821139 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Cadiz, F.;Paget, D.;Rowe, A. C. H.;Berkovits, V. L.;Ulin, V. P.;Arscott, S.;Peytavit, E.;
12:276:4 Diffusion of degenerate minority carriers in a p-type semiconductor
DOI:10.1063/1.4790275 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Weber, C. P.;Kittlaus, Eric A.;
12:276:5 All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence
DOI:10.1063/1.4889799 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Cadiz, F.;Barate, P.;Paget, D.;Grebenkov, D.;Korb, J. P.;Rowe, A. C. H.;Amand, T.;Arscott, S.;Peytavit, E.;
12:276:6 Differential ultrafast all-optical switching of the resonances of a micropillar cavity
DOI:10.1063/1.4896160 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Thyrrestrup, Henri;Yuce, Emre;Ctistis, Georgios;Claudon, Julien;Vos, Willem L.;Gerard, Jean-Michel;
12:276:7 Modeling of carrier lifetimes in uniaxially strained GaAs
DOI:10.1063/1.4717246 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Grivickas, P.;
12:276:8 Effect of Pauli Blockade on Spin-Dependent Diffusion in a Degenerate Electron Gas
DOI:10.1103/PhysRevLett.111.246601 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:2 AU: Cadiz, F.;Paget, D.;Rowe, A. C. H.;
12:276:9 Order-of-magnitude reduction of carrier lifetimes in [100] n-type GaAs shock-compressed to 4 GPa
DOI:10.1063/1.3561019 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Grivickas, P.;McCluskey, M. D.;Gupta, Y. M.;
12:277:1 Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures
DOI:10.1063/1.4721519 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Yoo, Jinkyoung;Chon, Bonghwan;Tang, Wei;Joo, Taiha;Dang, Le Si;Yi, Gyu-Chul;
12:277:2 Exciton Scattering Mechanism in a Single Semiconducting MgZnO Nanorod
DOI:10.1021/nl202626y JN:NANO LETTERS PY:2012
TC:4 AU: Yoo, Jinkyoung;Dang, Le Si;Chon, Bonghwan;Joo, Taiha;Yi, Gyu-Chul;
12:277:3 Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping
DOI:10.1002/adma.201305340 JN:ADVANCED MATERIALS PY:2014
TC:1 AU: Ding, Huaiyi;Pan, Nan;Ma, Chao;Wu, Yukun;Li, Junwen;Cai, Hongbing;Zhang, Kun;Zhang, Guanghui;Ren, Wenzhen;Li, Jianqi;Luo, Yi;Wang, Xiaoping;Hou, J. G.;
12:277:4 Anisotropic Third-Order Optical Non linearity of a single ZnO Micro/Nanowire
DOI:10.1021/nl203884j JN:NANO LETTERS PY:2012
TC:16 AU: Wang, Kai;Zhou, Jun;Yuan, Longyan;Tao, Yuting;Chen, Jian;Lu, Peixiang;Wang, Zhong Lin;
12:277:5 Metal-Lined Semiconductor Nanotubes for Surface Plasmon-Mediated Luminescence Enhancement
DOI:10.1021/nl400547z JN:NANO LETTERS PY:2013
TC:5 AU: Yoo, Jinkyoung;Ma, Xuedan;Tang, Wei;Yi, Gyu-Chul;
12:277:6 ZnO nanorods for efficient third harmonic UV generation
DOI:10.1364/OME.4.000701 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Das, Susanta Kumar;Gueell, Frank;Gray, Ciaran;Das, Prasanta Kumar;Grunwald, Ruediger;McGlynn, Enda;
12:277:7 Large off-resonant and intensity-dependent third-order optical nonlinearities of CdSeS quantum dots/polystyrene composite film
DOI:10.1016/j.matlet.2012.11.116 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Li, Xiaogang;Li, Fang;He, Zhicong;
12:277:8 ZnO nanorods for efficient third harmonic UV generation: erratum
DOI:10.1364/OME.4.001243 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Das, Susanta Kumar;Gueell, Frank;Gray, Ciaran;Das, Prasanta Kumar;Grunwald, Ruediger;McGlynn, Enda;
12:278:1 Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride
DOI:10.1063/1.3671117 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:2 Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride
DOI:10.1063/1.4815878 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:3 Occupation statistics of the V-Ga-O-N dislocations within n-type gallium nitride
DOI:10.1063/1.3603039 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:4 Occupation statistics of dislocations within uncompensated n-type wurtzite gallium nitride
DOI:10.1063/1.3583548 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:5 A transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride
DOI:10.1063/1.4801532 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:6 Dislocation line charge screening within n-type gallium nitride
DOI:10.1063/1.4773835 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Baghani, Erfan;O'Leary, Stephen K.;
12:278:7 Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film
DOI:10.1007/s11664-009-1040-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:3 AU: Wang, Fuxue;Lu, Hai;Xiu, Xiangqian;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;
12:279:1:1 Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements
DOI:10.1063/1.3276090 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Volotsenko, I.;Molotskii, M.;Barkay, Z.;Marczewski, J.;Grabiec, P.;Jaroszewicz, B.;Meshulam, G.;Grunbaum, E.;Rosenwaks, Y.;
12:279:1:2 A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations
DOI:10.1063/1.3524186 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Chee, Augustus K. W.;Broom, Ronald F.;Humphreys, Colin J.;Bosch, Eric G. T.;
12:279:1:3 Measurement of semiconductor surface potential using the scanning electron microscope
DOI:10.1063/1.3684556 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Heath, Jennifer T.;Jiang, Chun-Sheng;Al-Jassim, Mowafak M.;
12:279:1:4 Secondary electron dopant contrast imaging of compound semiconductor junctions
DOI:10.1063/1.3597785 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Chung, Suk;Wheeler, Virginia;Myers-Ward, Rachael;Nyakiti, Luke O.;Eddy, Charles R., Jr.;Gaskill, D. Kurt;Skowronski, Marek;Picard, Yoosuf N.;
12:279:1:5 Photoemission induced bias in two-dimensional silicon pn junctions
DOI:10.1063/1.3662440 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Lavayssiere, M.;Renault, O.;Mariolle, D.;Veillerot, M.;Barnes, J. P.;Hartmann, J. M.;Leroy, J.;Barrett, N.;
12:279:1:6 Observation of two-dimensional p-type dopant diffusion across a p(+)-InP/n(-)-InGaAs interface using scanning electron microscopy
DOI:10.1063/1.4800134 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Tsurumi, Daisuke;Hamada, Kotaro;Kawasaki, Yuji;
12:279:2:1 Screen-Printable Silver Pastes with Metallic Nano-Zinc and Nano-Zinc Alloys for Crystalline Silicon Photovoltaic Cells
DOI:10.1021/am1011996 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:20 AU: Ionkin, Alex S.;Fish, Brian M.;Li, Zhigang Rick;Lewittes, Mark;Soper, Paul D.;Pepin, John G.;Carroll, Alan F.;
12:279:2:2 Microstructural comparison of silicon solar cells' front-side Ag contact and the evolution of current conduction mechanisms
DOI:10.1063/1.3642956 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Li, Z. G.;Liang, L.;Ionkin, A. S.;Fish, B. M.;Lewittes, M. E.;Cheng, L. K.;Mikeska, K. R.;
12:279:2:3 Real-space microscopic electrical imaging of n(+)-p junction beneath front-side Ag contact of multicrystalline Si solar cells
DOI:10.1063/1.4703923 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Jiang, C-S.;Li, Z. G.;Moutinho, H. R.;Liang, L.;Ionkin, A.;Al-Jassim, M. M.;
12:279:2:4 Surface metallization of alumina ceramics: Effects of sintering time and substrate etching
DOI:10.1016/j.ceramint.2014.04.119 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Zheng, Zhiqin;Zhang, Yong;Yi, Facheng;Chen, Chen;Song, Xiaozhen;
12:279:2:5 Scanning capacitance spectroscopy on n(+) -p asymmetrical junctions in multicrystalline Si solar cells
DOI:10.1063/1.3605507 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Jiang, C. -S.;Heath, J. T.;Moutinho, H. R.;Al-Jassim, M. M.;
12:279:2:6 Screen-Printable Silver Pastes with Nanosized Glass Frits for Silicon Solar Cells
DOI:10.1007/s11664-012-2378-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:5 AU: Shih, Yu-Chou;Lin, Yeong-Her;You, Jiun-Pyng;Shi, Frank G.;
12:279:2:7 The Influence of Dispersants that Contain Polyethylene Oxide Groups on the Electrical Resistivity of Silver Paste
DOI:10.1002/app.41183 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:0 AU: Chiang, Tzu Hsuan;Chen, Yi-Fu;Lin, Ya Chun;Chen, Emi Yun;
12:280:1 Electrical characteristics of amorphous Si:H/crystalline Si0.3Ge0.7 heterojunction solar cells grown on compositionally graded buffer layers
DOI:10.1016/j.jcrysgro.2015.03.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Oshima, Ryuji;Yamanaka, Mitsuyuki;Kawanami, Hitoshi;Sakata, Isao;Matsubara, Koji;Sugaya, Takeyoshi;
12:280:2 Microcrystalline silicon-germanium solar cells with spectral sensitivities extending into 1300 nm
DOI:10.1016/j.solmat.2014.03.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Ni, Jian;Liu, Qun;Zhang, JianJun;Ma, Jun;Wang, Hao;Zhang, XiaoDan;Zhao, Ying;
12:280:3 Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts
DOI:10.1016/j.apsusc.2011.09.108 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Sanchez-Aniorte, I.;Barrio, R.;Casado, A.;Morales, M.;Carabe, J.;Gandia, J. J.;Molpeceres, C.;
12:280:4 Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells
DOI:10.1016/j.apsusc.2010.03.023 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Mikolasek, Miroslav;Racko, Juraj;Harmatha, Ladislav;Gaspierik, Pavol;Sutta, Pavol;
12:280:5 Photodetectors with an HIT structure on p-type crystalline Si wafers
DOI:10.1016/j.apsusc.2012.12.113 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Lin, C. -H.;Tsai, T. -H.;Wang, C. -M.;Yeh, W. -T.;
12:280:6 Electrical and optical interconnection for mechanically stacked multi-junction solar cells mediated by metal nanoparticle arrays
DOI:10.1063/1.4766339 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Mizuno, Hidenori;Makita, Kikuo;Matsubara, Koji;
12:280:7 Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells
DOI:10.1016/j.apsusc.2014.05.110 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Mikolasek, Miroslav;Pribytny, Patrik;Donoval, Daniel;Marek, Juraj;Chvala, Ales;Molnar, Marian;Kovac, Jaroslav;
12:280:8 Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process
DOI:10.1116/1.4820912 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Boronat, Alfredo;Silvestre, Santiago;Orpella, Albert;
12:280:9 Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell
DOI:10.1016/j.solmat.2013.03.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Cao, Yu;Zhang, Jianjun;Li, Chao;Li, Tianwei;Huang, Zhenhua;Ni, Jian;Hu, Ziyang;Geng, Xinhua;Zhao, Ying;
12:280:10 Design, fabrication and analysis of germanium: silicon solar cell in a multi-junction concentrator system
DOI:10.1016/j.solmat.2012.08.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:9 AU: Wang, Yi;Gerger, Andrew;Lochtefeld, Anthony;Wang, Lu;Kerestes, Chris;Opila, Robert;Barnett, Allen;
12:280:11 Efficiency and stability enhancement of laser-crystallized polycrystalline silicon thin-film solar cells by laser firing of the absorber contacts
DOI:10.1016/j.solmat.2013.09.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Weizman, M.;Rhein, H.;Dore, J.;Gall, S.;Klimm, C.;Andrae, G.;Schultz, C.;Fink, F.;Rau, B.;Schlatmann, R.;
12:280:12 Advanced materials processing for high-efficiency thin-film silicon solar cells
DOI:10.1016/j.solmat.2013.05.056 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:5 AU: Matsui, Takuya;Kondo, Michio;
12:280:13 Investigation of antimony diffusion for a local back surface field with laser-fired contacts in crystalline silicon solar cells
DOI:10.1016/j.scriptamat.2012.11.004 JN:SCRIPTA MATERIALIA PY:2013
TC:3 AU: Song, Kyuwan;Balaji, Nagarajan;Kim, Bonggi;Choi, Jaewoo;Ryu, Kyungyul;Park, Cheolmin;Ju, Minkyu;Lee, Youngseok;Lee, Youn-Jung;Lee, Hoongjoo;Lee, Taeseok;Yi, Junsin;
12:281:1 Si/Ge Junctions Formed by Nanomembrane Bonding
DOI:10.1021/nn103149c JN:ACS NANO PY:2011
TC:21 AU: Kiefer, Arnold M.;Paskiewicz, Deborah M.;Clausen, Anna M.;Buchwald, Walter R.;Soref, Richard A.;Lagally, Max G.;
12:281:2 Symmetry in Strain Engineering of Nanomembranes: Making New Strained Materials
DOI:10.1021/nn2009672 JN:ACS NANO PY:2011
TC:9 AU: Paskiewicz, Deborah M.;Scott, Shelley A.;Savage, Donald E.;Celler, George K.;Lagally, Max G.;
12:281:3 Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation
DOI:10.1063/1.3601355 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Byun, Ki Yeol;Fleming, Pete;Bennett, Nick;Gity, Farzan;McNally, Patrick;Morris, Michael;Ferain, Isabelle;Colinge, Cindy;
12:281:4 Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation
DOI:10.1063/1.3688174 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Gity, Farzan;Byun, Ki Yeol;Lee, Ko-Hsin;Cherkaoui, Karim;Hayes, John M.;Morrison, Alan P.;Colinge, Cindy;Corbett, Brian;
12:281:5 Low temperature exfoliation process in hydrogen-implanted germanium layers
DOI:10.1063/1.3326942 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Ferain, I. P.;Byun, K. Y.;Colinge, C. A.;Brightup, S.;Goorsky, M. S.;
12:281:6 3D nanostructures by stacking pre-patterned fluid-supported single-crystal Si membranes
DOI:10.1116/1.3628672 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Ghadarghadr, Shabnam;Fucetola, Corey P.;Cheong, Lin Lee;Moon, Euclid E.;Smith, Henry I.;
12:281:7 Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding
DOI:10.1007/s11664-010-1228-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:5 AU: Kanbe, Hiroshi;Hirose, Mami;Ito, Tatsuya;Taniwaki, Masafumi;
12:281:8 Influence of the hydrogen implantation power density on ion cutting of Ge
DOI:10.1116/1.4817756 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Ruan, Yujiao;Lin, Wang;Chen, Songyan;Li, Cheng;Lai, Hongkai;Huang, Wei;Li, Jun;
12:282:1 Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN
DOI:10.1063/1.3632073 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Sun, Qian;Yerino, Christopher D.;Leung, Benjamin;Han, Jung;Coltrin, Michael E.;
12:282:2 Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2
DOI:10.1016/j.jcrysgro.2015.03.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Leung, Benjamin;Tsai, Miao-Chan;Song, Jie;Zhang, Yu;Xiong, Kanglin;Yuan, Ge;Coltrin, Michael E.;Han, Jung;
12:282:3 Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy
DOI:10.1002/adfm.201304062 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:1 AU: Bayram, Can;Ott, John A.;Shiu, Kuen-Ting;Cheng, Cheng-Wei;Zhu, Yu;Kim, Jeehwan;Razeghi, Manijeh;Sadana, Devendra K.;
12:282:4 Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers
DOI:10.1002/adma.201204047 JN:ADVANCED MATERIALS PY:2013
TC:8 AU: Leung, Benjamin;Song, Jie;Zhang, Yu;Han, Jung;
12:282:5 Misfit and dislocation nucleation during heteroepitaxial growth
DOI:10.1016/j.commatsci.2013.11.030 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Choudhary, Muhammad Ajmal;Kundin, Julia;Emmerich, Heike;
12:282:6 Single-Crystal Germanium Growth on Amorphous Silicon
DOI:10.1002/adfm.201102015 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:5 AU: McComber, Kevin A.;Duan, Xiaoman;Liu, Jifeng;Michel, Jurgen;Kimerling, Lionel C.;
12:282:7 Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy
DOI:10.1016/j.jcrysgro.2012.08.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Aagesen, L. K.;Lee, L. K.;Ku, P. -C.;Thornton, K.;
12:282:8 Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
DOI:10.1063/1.4856275 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Antwi, K. K. Ansah;Soh, C. B.;Wee, Q.;Tan, Rayson J. N.;Yang, P.;Tan, H. R.;Sun, L. F.;Shen, Z. X.;Chua, S. J.;
12:282:9 Nucleation and successive microstructure evolution via phase-field and phase-field crystal method
DOI:10.1016/j.jcrysgro.2009.09.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Prieler, Robert;Li, Daming;Emmerich, Heike;
12:282:10 Effect of mask material on selective growth of GaN by RF-MBE
DOI:10.1016/j.jcrysgro.2011.04.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Nagae, Yuki;Iwatsuki, Takenori;Shirai, Yuya;Osawa, Yuki;Naritsuka, Shigeya;Maruyama, Takahiro;
12:283:1 An effective approach for the minimization of errors in capacitance-voltage carrier profiling of quantum structures
DOI:10.1063/1.4870287 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Biswas, Dipankar;Panda, Siddhartha;
12:283:2 Temperature-dependent energy band gap variation in self-organized InAs quantum dots
DOI:10.1063/1.3651492 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Yeo, Inah;Song, Jin Dong;Lee, Jungil;
12:283:3 Strain analysis of highly scalable single InAs/InP quantum dots in a stress-sensitive environment
DOI:10.1063/1.4817758 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Mnaymneh, K.;Dalacu, D.;Poole, P. J.;Williams, R. L.;
12:283:4 Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
DOI:10.1063/1.3555100 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Khmissi, H.;Baira, M.;Sfaxi, L.;Bouzaiene, L.;Saidi, F.;Bru-Chevallier, C.;Maaref, H.;
12:283:5 Temperature-dependent energy gap variation in InAs/GaAs quantum dots
DOI:10.1063/1.3396986 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Lu, Xuejun;Vaillancourt, Jarrod;Wen, Hong;
12:283:6 Diamondoids and large unit cell method as building blocks of InAs nanocrystals: A density functional theory study
DOI:10.1016/j.commatsci.2014.04.029 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Abdulsattar, Mudar Ahmed;Mohammed, Ismail Salih;
12:283:7 Guidelines for the design of appropriate structures for proper capacitance-voltage measurements on III-V quantum wells
DOI:10.1063/1.3462395 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Panda, Siddhartha;Biswas, Dipankar;
12:283:8 Inconsistent temperature dependence in capacitance-voltage profiling of quantum wells
DOI:10.1063/1.3554673 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Panda, Siddhartha;Biswas, Dipankar;
12:283:9 Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals
DOI:10.1063/1.4904031 JN:AIP ADVANCES PY:2014
TC:0 AU: Abdulsattar, Mudar Ahmed;Hussein, Mohammed T.;Hameed, Hadeel Ali;
12:283:10 Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
DOI:10.1063/1.3371356 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Khmissi, H.;Sfaxi, L.;Bouzaiene, L.;Saidi, F.;Maaref, H.;Bru-Chevallier, C.;
12:283:11 Explanations of inconsistencies in capacitance-voltage profiles of normal and inverted heterostructures
DOI:10.1016/j.mssp.2013.03.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Panda, Siddhartha;Biswas, Dipankar;
12:284:1:1 The effect of annealing temperature, residual O-2 partial pressure, and ambient flow rate on the growth of SiO (x) nanowires
DOI:10.1007/s00339-012-6814-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:6 AU: Yang, Yi;Shalav, Avi;Kim, Taehyun;Elliman, Robert G.;
12:284:1:2 Active-oxidation of Si as the source of vapor-phase reactants in the growth of SiOx nanowires on Si
DOI:10.1063/1.3488882 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Kim, T. -H.;Shalav, A.;Elliman, R. G.;
12:284:1:3 GeOx and SiOx nanowires grown via the active oxidation of Ge and Si substrates
DOI:10.1557/jmr.2011.150 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:2 AU: Shalav, Avi;Collin, Gabriel H.;Yang, Yi;Kim, Taehyun;Elliman, Robert G.;
12:284:1:4 Manufacturing aspects of oxide nanowires
DOI:10.1016/j.matlet.2009.12.052 JN:MATERIALS LETTERS PY:2010
TC:12 AU: Sekhar, Praveen K.;Bhansali, Shekhar;
12:284:1:5 Synthesis and characterization of Y2O3 nanoparticles and nanorods in magnetron sputtered Ti-Y alloy films
DOI:10.1007/s00339-012-7247-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Zhang, Jinchao;Li, Xiongwei;Wang, Yongli;Liu, Shi;
12:284:2:1 The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers
DOI:10.1088/0957-4484/21/29/295603 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Sharma, Parul;Anguita, J. V.;Stolojan, V.;Henley, S. J.;Silva, S. R. P.;
12:284:2:2 Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide
DOI:10.1088/0957-4484/21/4/045604 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Shin, Dong Hee;Kim, Sung;Hong, Seung Hui;Choi, Suk-Ho;Kim, Kyung Joong;
12:284:2:3 Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies
DOI:10.1088/0957-4484/22/40/405604 JN:NANOTECHNOLOGY PY:2011
TC:1 AU: Callsen, G.;Reparaz, J. S.;Wagner, M. R.;Vierck, A.;Phillips, M. R.;Thomsen, C.;Hoffmann, A.;
12:284:2:4 Raman analysis of oxide cladded silicon core nanowires grown with solid silicon feed stock
DOI:10.1007/s11051-011-0414-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:0 AU: Sharma, Parul;Stolojan, Vlad;Silva, S. R. P.;
12:284:3:1 Secondary growth and photoluminescence from erbium implanted silica nanowires
DOI:10.1063/1.3309774 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Shalav, A.;Kim, T. H.;Elliman, R. G.;
12:284:3:2 Fabrication of coaxial nanowire heterostructures: SiO nanowires with conformal TiO2 coatings
DOI:10.1007/s00339-012-6804-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:1 AU: Shalav, Avi;Venkatachalam, Dinesh K.;Elliman, Robert G.;
12:284:3:3 Preparation of silica nanowires using porous silicon as Si source
DOI:10.1016/j.apsusc.2011.09.109 JN:APPLIED SURFACE SCIENCE PY:2011
TC:0 AU: Yi Liang;Bai Xue;Yang Yumeng;Nie Eryong;Liu Donglai;Sun Congli;Feng Huanhuan;Xu Jingjing;Chen Yu;Jin Yong;Jiao Zhifeng;Sun Xiaosong;
12:285:1 Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3527928 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Radtke, G.;Couillard, M.;Botton, G. A.;Zhu, D.;Humphreys, C. J.;
12:285:2 Structure and chemistry of the Si(111)/AlN interface
DOI:10.1063/1.3674984 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Radtke, G.;Couillard, M.;Botton, G. A.;Zhu, D.;Humphreys, C. J.;
12:285:3 Interfacial Structure and Chemistry of GaN on Ge(111)
DOI:10.1103/PhysRevLett.111.256101 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:0 AU: Zhang, Siyuan;Zhang, Yucheng;Cui, Ying;Freysoldt, Christoph;Neugebauer, Joerg;Lieten, Ruben R.;Barnard, Jonathan S.;Humphreys, Colin J.;
12:285:4 Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4
DOI:10.1063/1.4801765 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Hu, Jiannan;Hao, Zhibiao;Niu, Lang;E, Yanxiong;Wang, Lai;Luo, Yi;
12:285:5 Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions
DOI:10.1063/1.3658850 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Xu, Zhongjie;Zhang, Lixia;He, Hongtao;Wang, Jiannong;Xie, Maohai;
12:285:6 Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition
DOI:10.1063/1.3499428 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Keller, S.;Dora, Y.;Wu, F.;Chen, X.;Chowdury, S.;DenBaars, S. P.;Speck, J. S.;Mishra, U. K.;
12:285:7 Imaging High-Energy Electrons Propagating in a Crystal
DOI:10.1103/PhysRevLett.106.160802 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:6 AU: Etheridge, Joanne;Lazar, Sorin;Dwyer, Christian;Botton, Gianluigi A.;
12:285:8 Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2012.12.049 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Park, Jinsub;Yao, Takafumi;
12:285:9 The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films
DOI:10.1016/j.tsf.2010.12.159 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Park, Jinsub;Minegishi, T.;Park, S. H.;Hong, S. K.;Chang, J. H.;Yao, T.;
12:286:1 Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates
DOI:10.1016/j.jcrysgro.2013.04.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Yang, Yibin;Xiang, Peng;Liu, Minggang;Chen, Weijie;He, Zhiyuan;Han, Xiaobiao;Ni, Yiqiang;Yang, Fan;Yao, Yao;Wu, Zhisheng;Liu, Yang;Zhang, Baijun;
12:286:2 Dislocation bending and tensile stress generation in GaN and AlGaN films
DOI:10.1016/j.jcrysgro.2012.08.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Raghavan, Srinivasan;Manning, Ian C.;Weng, Xiaojun;Redwing, Joan M.;
12:286:3 Kinetic approach to dislocation bending in low-mobility films
DOI:10.1103/PhysRevB.83.052102 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Raghavan, Srinivasan;
12:286:4 Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth
DOI:10.1063/1.4816742 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Nagaboopathy, Mohan;Ravishankar, Narayanan;Raghavan, Srinivasan;
12:286:5 GaN grown on Si(111) with step-graded AlGaN intermediate layers
DOI:10.1016/j.apsusc.2010.04.018 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Huang, C. C.;Chang, S. J.;Chuang, R. W.;Lin, J. C.;Cheng, Y. C.;Lin, W. J.;
12:286:6 The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AIN/Si(111) substrates
DOI:10.1016/j.jcrysgro.2013.08.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Gagnon, Jarod C.;Leathersich, Jeffrey M.;Shahedipour-Sandvik, Fatemeh (Shadi);Redwing, Joan M.;
12:286:7 Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate
DOI:10.1063/1.4798598 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Tungare, Mihir;Weng, Xiaojun;Leathersich, Jeffrey M.;Suvarna, Puneet;Redwing, Joan M.;Shahedipour-Sandvik, F. (Shadi);
12:286:8 Direct measurement of lateral macrostep velocity on an AIN vicinal surface by transmission electron microscopy
DOI:10.1063/1.4721656 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Shen, X. Q.;Matsuhata, H.;Ide, T.;Shimizu, M.;
12:286:9 Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN
DOI:10.1016/j.jcrysgro.2009.11.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Manning, I. C.;Weng, X.;Fanton, M. A.;Snyder, D. W.;Redwing, J. M.;
12:286:10 In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates
DOI:10.1007/s11664-011-1852-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Gagnon, Jarod C.;Tungare, Mihir;Weng, Xiaojun;Leathersich, Jeffrey M.;Shahedipour-Sandvik, Fatemeh;Redwing, Joan M.;
12:286:11 Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
DOI:10.1007/s11664-013-2491-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Leathersich, Jeffrey M.;Tungare, Mihir;Weng, Xiaojun;Suvarna, Puneet;Agnihotri, Pratik;Evans, Morgan;Redwing, Joan;Shahedipour-Sandvik, F.;
12:286:12 Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
DOI:10.1016/j.tsf.2010.12.079 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Tungare, M.;Kamineni, V. K.;Shahedipour-Sandvik, F.;Diebold, A. C.;
12:287:1 Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer
DOI:10.1063/1.4723719 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Chevtchenko, S. A.;Cho, E.;Brunner, F.;Bahat-Treidel, E.;Wuerfl, J.;
12:287:2 Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure
DOI:10.1063/1.4804600 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Chen, Jr-Tai;Forsberg, Urban;Janzen, Erik;
12:287:3 Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width
DOI:10.1063/1.4825318 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Peng, Enchao;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Yin, Haibo;Chen, Hong;Feng, Chun;Jiang, Lijuan;Qu, Shenqi;Kang, He;Hou, Xun;Wang, Zhanguo;
12:287:4 Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices
DOI:10.1016/j.jcrysgro.2014.10.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Gamarra, Piero;Lacam, Cedric;Tordjman, Maurice;Splettstoesser, Joerg;Schauwecker, Bernd;di Forte-Poisson, Marie-Antoinette;
12:287:5 Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
DOI:10.1016/j.tsf.2014.05.045 JN:THIN SOLID FILMS PY:2014
TC:2 AU: He, X. G.;Zhao, D. G.;Jiang, D. S.;Liu, Z. S.;Chen, P.;Le, L. C.;Yang, J.;Li, X. J.;Zhang, S. M.;Zhu, J. J.;Wang, H.;Yang, H.;
12:287:6 Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.05.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Mei, Fei;Yang, Zhijie;Xu, Jinxia;Wu, Linzhang;Wu, Tiezhou;Zhang, Danming;
12:287:7 Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
DOI:10.1016/j.jcrysgro.2012.10.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Gamarra, P.;Lacam, C.;Tordjman, M.;di Forte-Poisson, M-A;
12:287:8 Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
DOI:10.1016/j.jcrysgro.2010.04.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Yuan, Tzu-Tao;Kuei, Ping-Yu;Hsieh, Li-Zen;Li, Ta-Ching;Lin, Wen-Jen;
12:287:9 Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
DOI:10.1016/j.jcrysgro.2010.12.058 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Behmenburg, H.;Giesen, C.;Srnanek, R.;Kovac, J.;Kalisch, H.;Heuken, M.;Jansen, R. H.;
12:287:10 Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface
DOI:10.1016/j.jcrysgro.2015.07.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Chen, Jr-Tai;Pomeroy, James W.;Rorsman, Niklas;Xia, Chao;Virojanadara, Chariya;Forsberg, Urban;Kuball, Martin;Janzen, Erik;
12:288:1 Strain assisted inter-diffusion in GaN/AlN quantum dots
DOI:10.1063/1.4775587 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Leclere, C.;Fellmann, V.;Bougerol, C.;Cooper, D.;Gayral, B.;Proietti, M. G.;Renevier, H.;Daudin, B.;
12:288:2 Growth of bulk GaN crystal by Na flux method under various conditions
DOI:10.1016/j.jcrysgro.2011.12.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:27 AU: Mori, Y.;Imade, M.;Murakami, K.;Takazawa, H.;Imabayashi, H.;Todoroki, Y.;Kitamoto, K.;Maruyama, M.;Yoshimura, M.;Kitaoka, Y.;Sasaki, T.;
12:288:3 GaN doped with beryllium-An effective light converter for white light emitting diodes
DOI:10.1063/1.4812335 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Teisseyre, Henryk;Bockowski, Michal;Grzegory, Izabella;Kozanecki, Adrian;Damilano, Benjamin;Zhydachevskii, Yaroslav;Kunzer, Michael;Holc, Katarzyna;Schwarz, Ulrich T.;
12:288:4 Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN
DOI:10.1016/j.jcrysgro.2011.12.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:16 AU: Bockowski, M.;Grzegory, I.;Lucznik, B.;Sochacki, T.;Nowak, G.;Sadovyi, B.;Strak, P.;Kamler, G.;Litwin-Staszewska, E.;Porowski, S.;
12:288:5 Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
DOI:10.1088/0957-4484/25/24/245602 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Kuchuk, A. V.;Kladko, V. P.;Petrenko, T. L.;Bryksa, V. P.;Belyaev, A. E.;Mazur, Yu I.;Ware, M. E.;DeCuir, E. A., Jr.;Salamo, G. J.;
12:288:6 Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration
DOI:10.1016/j.jcrysgro.2011.12.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:11 AU: Grzegory, I.;Bockowski, M.;Lucznik, B.;Weyher, J.;Litwin-Staszewska, E.;Konczewicz, L.;Sadovyi, B.;Nowakowski, P.;Porowski, S.;
12:288:7 Structural defects in bulk GaN
DOI:10.1016/j.jcrysgro.2014.06.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Liliental-Weber, Z.;dos Reis, R.;Mancuso, M.;Song, C. Y.;Grzegory, I.;Porowski, S.;Bockowski, M.;
12:288:8 Morphology and Characterization of GaN Crystals Grown by Na Flux Method under 7 MPa Nitrogen Pressure
DOI:10.1080/00150193.2013.842882 JN:FERROELECTRICS PY:2013
TC:0 AU: Zhou Mingbin;Li Zhenrong;Li Jingsi;Fan Shiji;Xu Zhuo;
12:288:9 Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient
DOI:10.1007/s11664-014-2996-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Zhou, Mingbin;Li, Zhenrong;Li, Jingsi;Fan, Shiji;Xu, Zhuo;
12:289:1 High current-induced degradation of AlGaN ultraviolet light emitting diodes
DOI:10.1063/1.3590149 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Pinos, A.;Marcinkevicius, S.;Shur, M. S.;
12:289:2 Physical mechanisms for hot-electron degradation in GaN light-emitting diodes
DOI:10.1063/1.3357312 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Leung, K. K.;Fong, W. K.;Chan, P. K. L.;Surya, C.;
12:289:3 Carrier localization and related photoluminescence in cubic AlGaN epilayers
DOI:10.1063/1.3632988 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Powell, R. E. L.;Novikov, S. V.;Luckert, F.;Edwards, P. R.;Akimov, A. V.;Foxon, C. T.;Martin, R. W.;Kent, A. J.;
12:289:4 Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
DOI:10.1016/j.jcrysgro.2010.10.125 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Novikov, S. V.;Staddon, C. R.;Foxon, C. T.;Luckert, F.;Edwards, P. R.;Martin, R. W.;Kent, A. J.;
12:289:5 Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition
DOI:10.1063/1.4894831 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Chen, Hsiang;Chu, Yu-Cheng;Shei, Shih-Chang;Chen, Yun-Ti;Chen, Chian-You;
12:289:6 Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region
DOI:10.1007/s11664-013-2632-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Arivazhagan, Ponnusamy;Ramesh, Raju;Jayasakthi, Mathaiyan;Loganathan, Ravi;Balaji, Manavaimaran;Baskar, Krishnan;
12:289:7 Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence
DOI:10.1063/1.4803016 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Chen, Hsiang;
12:289:8 Degradation mechanisms in GaN light-emitting diodes undergoing reverse-bias operations in water vapor
DOI:10.1063/1.4826254 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Chen, Hsiang;Huang, Bo Yun;Chu, Yu Cheng;
12:289:9 Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
DOI:10.1016/j.scriptamat.2011.11.025 JN:SCRIPTA MATERIALIA PY:2012
TC:0 AU: Morales, F. M.;Carvalho, D.;Ben, T.;Garcia, R.;Molina, S. I.;Marti, A.;Luque, A.;Staddon, C. R.;Campion, R. P.;Foxon, C. T.;
12:289:10 Temperature effects during the growth of InxGa1-xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.04.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Hall, J. L.;Kent, A. J.;Foxon, C. T.;Campion, R. P.;
12:289:11 RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
DOI:10.1016/j.jcrysgro.2012.12.120 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Kakuda, M.;Morikawa, S.;Kuboya, S.;Katayama, R.;Yaguchi, H.;Onabe, K.;
12:290:1 Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes
DOI:10.1063/1.4769807 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Feng, L. F.;Li, Y.;Li, D.;Hu, X. D.;Yang, W.;Wang, C. D.;Xing, Q. Y.;
12:290:2 Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias
DOI:10.1063/1.4896541 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bansal, Kanika;Henini, Mohamed;Alshammari, Marzook S.;Datta, Shouvik;
12:290:3 Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory
DOI:10.1063/1.3597831 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Li, Y.;Wang, C. D.;Feng, L. F.;Zhu, C. Y.;Cong, H. X.;Li, D.;Zhang, G. Y.;
12:290:4 Size-dependent capacitance study on InGaN-based micro-light-emitting diodes
DOI:10.1063/1.4891233 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yang, Wei;Zhang, Shuailong;McKendry, Jonathan J. D.;Herrnsdorf, Johannes;Tian, Pengfei;Gong, Zheng;Ji, Qingbin;Watson, Ian M.;Gu, Erdan;Dawson, Martin D.;Feng, Liefeng;Wang, Cunda;Hu, Xiaodong;
12:290:5 Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices
DOI:10.1063/1.4790609 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Bansal, Kanika;Datta, Shouvik;
12:290:6 Voltage modulated electro-luminescence spectroscopy to understand negative capacitance and the role of sub-bandgap states in light emitting devices
DOI:10.1063/1.3665128 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Bansal, Kanika;Datta, Shouvik;
12:290:7 High efficiency membrane light emitting diode fabricated by back wafer thinning technique
DOI:10.1063/1.4890859 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, Xin;Shi, Zheng;Zhu, Gangyi;Zhang, Miao;Zhu, Hongbo;Wang, Yongjin;
12:291:1 The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes
DOI:10.1063/1.4847735 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Volciuc, Olesea;Braniste, Tudor;Tiginyanu, Ion;Stevens-Kalceff, Marion A.;Ebeling, Jakob;Aschenbrenner, Timo;Hommel, Detlef;Ursaki, Veaceslav;Gutowski, Juergen;
12:291:2 Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
DOI:10.1063/1.4890497 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Wallace, M. J.;Edwards, P. R.;Kappers, M. J.;Hopkins, M. A.;Oehler, F.;Sivaraya, S.;Allsopp, D. W. E.;Oliver, R. A.;Humphreys, C. J.;Martin, R. W.;
12:291:3 Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes
DOI:10.1002/adfm.201303001 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: ElAfandy, Rami T.;Majid, Mohammed A.;Ng, Tien Khee;Zhao, Lan;Cha, Dongkyu;Ooi, Boon S.;
12:291:4 The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
DOI:10.1063/1.4824193 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Oliver, R. A.;Massabuau, F. C-P;Kappers, M. J.;Phillips, W. A.;Thrush, E. J.;Tartan, C. C.;Blenkhorn, W. E.;Badcock, T. J.;Dawson, P.;Hopkins, M. A.;Allsopp, D. W. E.;Humphreys, C. J.;
12:291:5 Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array
DOI:10.1063/1.4737418 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Lethy, K. J.;Edwards, P. R.;Liu, C.;Wang, W. N.;Martin, R. W.;
12:291:6 Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks
DOI:10.1016/j.matlet.2010.10.033 JN:MATERIALS LETTERS PY:2011
TC:13 AU: Tiginyanu, Ion;Popa, Veaceslav;Stevens-Kalceff, Marion A.;
12:291:7 Cathodoluminescence characterization of suspended GaN nanomembranes
DOI:10.1063/1.4816562 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Stevens-Kalceff, M. A.;Tiginyanu, I. M.;Popa, V.;Braniste, T.;Brenner, P.;
12:292:1:1 Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation
DOI:10.1016/j.jcrysgro.2013.01.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Zeng, Xionghui;Han, Baixiang;Wang, Xiaodan;Shi, Jianping;xu, Yu;Zhang, Jicai;Wang, Jianfeng;Zhang, Jinping;Xu, Ke;
12:292:1:2 Synthesis of wurtzite GaN thin film via spin coating method
DOI:10.1016/j.mssp.2013.08.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Fong, C. Y.;Ng, S. S.;Yam, F. K.;Abu Hassan, H.;Hassan, Z.;
12:292:1:3 An investigation of sol-gel spin coating growth of wurtzite GaN thin film on 6H-SiC substrate
DOI:10.1016/j.crysgro.2014.12.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Fong, C. Y.;Ng, S. S.;Yam, F. K.;Abu Hassan, H.;Hassan, Z.;
12:292:1:4 Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
DOI:10.1007/s11664-010-1139-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:6 AU: Pang, Liang;Seo, Hui-Chan;Chapman, Patrick;Adesida, Ilesanmi;Kim, Kyekyoon (Kevin);
12:292:2:1 Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3
DOI:10.1016/j.jcrysgro.2010.06.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Kiyono, Hajime;Sakai, Toshiki;Takahashi, Mari;Shimada, Shiro;
12:292:2:2 Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals
DOI:10.1016/j.jcrysgro.2011.10.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Masubuchi, Yuji;Yamaoka, Ryohei;Motohashi, Teruki;Kirihara, Kazuhiko;Lee, Woong;Watanabe, Kentaro;Sekiguchi, Takashi;Kikkawa, Shinichi;
12:292:2:3 Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth
DOI:10.1016/j.jeurceramsoc.2011.10.038 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:3 AU: Masubuchi, Yuji;Yamaoka, Ryohei;Tohei, Tetsuya;Mizoguchi, Teruyasu;Ikuhara, Yuichi;Kikkawa, Shinichi;
12:292:2:4 Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route
DOI:10.1016/j.materresbull.2009.10.008 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:8 AU: Miyaake, Azumi;Masubuchi, Yuji;Takeda, Takashi;Kikkawa, Shinichi;
12:292:3:1 Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN
DOI:10.1063/1.4792662 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Koehler, K.;Gutt, R.;Wiegert, J.;Kirste, L.;
12:292:3:2 Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method
DOI:10.1063/1.3653825 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Gutt, R.;Himmerlich, M.;Fenske, M.;Mueller, S.;Lim, T.;Kirste, L.;Waltereit, P.;Koehler, K.;Krischok, S.;Fladung, T.;
12:292:3:3 Reactor dependent starting transients of doping profiles in MOVPE grown GaN
DOI:10.1016/j.jcrysgro.2011.02.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Koehler, K.;Gutt, R.;Mueller, S.;Wiegert, J.;Menner, H. P.;Kirste, L.;Protzmann, H.;Heuken, M.;
12:292:4:1 Synthesis and characterization of GaN powder by the cyanonitridation of gallium oxide powder
DOI:10.1016/j.ceramint.2012.04.019 JN:CERAMICS INTERNATIONAL PY:2012
TC:0 AU: Jung, Woo-Sik;
12:292:4:2 Correlated Compositions, Structures, and Photoluminescence Properties of Gallium Nitride Nanoparticles
DOI:10.1002/adma.201003750 JN:ADVANCED MATERIALS PY:2011
TC:9 AU: Schwenzer, Birgit;Hu, Jerry;Morse, Daniel E.;
12:293:1:1 Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
DOI:10.1063/1.3554751 JN:APPLIED PHYSICS LETTERS PY:2011
TC:43 AU: Klopp, P.;Griebner, U.;Zorn, M.;Weyers, M.;
12:293:1:2 Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers
DOI:10.1063/1.4905203 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Boettge, C. N.;Hader, J.;Kilen, I.;Moloney, J. V.;Koch, S. W.;
12:293:1:3 Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium
DOI:10.1063/1.4872316 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hader, J.;Moloney, J. V.;Koch, S. W.;
12:293:1:4 Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser
DOI:10.1063/1.3644162 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Wilcox, K. G.;Quarterman, A. H.;Beere, H. E.;Ritchie, D. A.;Tropper, A. C.;
12:293:2:1 Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses
DOI:10.1063/1.4835855 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Bek, R.;Kahle, H.;Schwarzbaeck, T.;Jetter, M.;Michler, P.;
12:293:2:2 Deep-red semiconductor monolithic mode-locked lasers
DOI:10.1063/1.4903496 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kong, L.;Wang, H. L.;Bajek, D.;White, S. E.;Forrest, A. F.;Wang, X. L.;Cui, B. F.;Pan, J. Q.;Ding, Y.;Cataluna, M. A.;
12:293:2:3 All quantum dot mode-locked semiconductor disk laser emitting at 655 nm
DOI:10.1063/1.4894182 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bek, R.;Kersteen, G.;Kahle, H.;Schwarzbaeck, T.;Jetter, M.;Michler, P.;
12:293:2:4 Absorber and gain chip optimization to improve performance from a passively modelocked electrically pumped vertical external cavity surface emitting laser
DOI:10.1063/1.4870048 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zaugg, C. A.;Gronenborn, S.;Moench, H.;Mangold, M.;Miller, M.;Weichmann, U.;Pallmann, W. P.;Golling, M.;Tilma, B. W.;Keller, U.;
12:293:3:1 Comparison of AlGaInP-VECSEL gain structures
DOI:10.1016/j.jcrysgro.2014.10.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Baumgaertner, Stefan;Kahle, Hermann;Bek, Roman;Schwarzbaeck, Thomas;Jetter, Michael;Michler, Peter;
12:293:3:2 Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs
DOI:10.1007/s00339-009-5459-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:3 AU: Piskorski, Lukasz;Sarzala, Robert P.;Nakwaski, Wlodzimierz;
12:293:3:3 Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 mu m
DOI:10.1007/s00339-013-7915-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Sarzala, Robert P.;Piskorski, Lukasz;Kudrawiec, Robert;Nakwaski, Wlodzmierz;
12:293:3:4 Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs
DOI:10.1016/j.jcrysgro.2012.09.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Schwarzbaeck, Thomas;Kahle, Hermann;Jetter, Michael;Michler, Peter;
12:293:3:5 An attempt to design long-wavelength (> 2 mu m) InP-based GaInNAs diode lasers
DOI:10.1007/s00339-012-6977-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Sarzala, Robert P.;Piskorski, Lukasz;Szczerbiak, Pawel;Kudrawiec, Robert;Nakwaski, Wlodzimierz;
12:294:1 Nanowires for energy
DOI:10.1088/0957-4484/23/19/190201 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: LaPierre, Ray;Sunkara, Mahendra;
12:294:2 Fabrication of solution processed 3D nanostructured CulnGaS(2) thin film solar cells
DOI:10.1088/0957-4484/25/12/125401 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Chu, Van Ben;Cho, Jin Woo;Park, Se Jin;Hwang, Yun Jeong;Park, Hoo Keun;Do, Young Rag;Min, Byoung Koun;
12:294:3 Nanowires for energy generation
DOI:10.1088/0957-4484/23/19/194002 JN:NANOTECHNOLOGY PY:2012
TC:12 AU: Hiralal, Pritesh;Unalan, Husnu Emrah;Amaratunga, Gehan A. J.;
12:295:1 First-Principles Study of the Structural, Electronic, and Optical Properties of Oxide-Sheathed Silicon Nanowires
DOI:10.1021/nn102232u JN:ACS NANO PY:2011
TC:10 AU: Bondi, Robert J.;Lee, Sangheon;Hwang, Gyeong S.;
12:295:2 First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide
DOI:10.1103/PhysRevB.81.195207 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Bondi, Robert J.;Lee, Sangheon;Hwang, Gyeong S.;
12:295:3 Role of structural disorder in optical absorption in silicon
DOI:10.1103/PhysRevB.82.115214 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Bondi, Robert J.;Lee, Sangheon;Hwang, Gyeong S.;
12:295:4 Mechanical properties of thin films of hydrogenated silicon and their relationship with microstructure
DOI:10.1007/s00339-011-6470-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:0 AU: Wang, Quan;Hu, Ran;Ding, Jianning;Jiang, Liyun;
12:295:5 Structural and electronic properties of CuInS2 nanowire: A study of density functional theory
DOI:10.1016/j.commatsci.2014.03.060 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Nayebi, Payman;Mirabbaszadeh, Kavoos;Shamshirsaz, Mahnaz;
12:295:6 Atomistic structural description of the Si(001)/a-SiO2 interface: The influence of different Keating-like potential parameters
DOI:10.1063/1.3581110 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Lee, Sangheon;Bondi, Robert J.;Hwang, Gyeong S.;
12:295:7 Generating ordered Si nanocrystals via atomic force microscopy
DOI:10.1016/j.jnoncrysol.2011.12.018 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Verveniotis, Elisseos;Sipek, Emil;Stuchlik, Jiri;Kocka, Jan;Rezek, Bohuslav;
12:295:8 Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon
DOI:10.1016/j.tsf.2010.05.107 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Verveniotis, E.;Rezek, B.;Sipek, E.;Stuchlik, J.;Kocka, J.;
12:295:9 Strain effects on the stability and structure of vacancy clusters in Si: A first-principles study
DOI:10.1103/PhysRevB.81.245206 JN:PHYSICAL REVIEW B PY:2010
TC:1 AU: Bondi, Robert J.;Lee, Sangheon;Hwang, Gyeong S.;
12:295:10 Thermal trimming and tuning of hydrogenated amorphous silicon nanophotonic devices
DOI:10.1063/1.3479918 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Selvaraja, Shankar Kumar;Bogaerts, Wim;VanThourhout, Dries;Schaekers, Marc;
12:295:11 Nanoindentation of hydrogenated amorphous silicon
DOI:10.1080/14786435.2010.502151 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:1 AU: Pantchev, B.;Danesh, P.;Wiezorek, J.;
12:296:1 Synthesis of GaN cauliflowers by ammoniating Ga2O3
DOI:10.1016/j.jallcom.2012.10.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Bao, Keyan;Wang, Liangbiao;Yan, Jiawei;Sun, Hongxian;Guo, Ruiting;Wu, Yapei;
12:296:2 Separation of laterally overgrown GaN template by using selective electrochemical etching
DOI:10.1016/j.jallcom.2012.07.016 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Jeon, Dae-Woo;Cho, Han-Su;Park, Jae-Woo;Jang, Lee-Woon;Kim, Myoung;Jeon, Ju-Won;Ju, Jin-Woo;Baek, Jong Hyeob;Lee, In-Hwan;
12:296:3 Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots
DOI:10.1016/j.jallcom.2012.01.158 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:8 AU: Ke, Wen-Cheng;Lee, Shuo-Jen;Chen, Shiow-Long;Kao, Chia-Yu;Houng, Wei-Chung;Wei, Chih-An;Su, Yi-Ru;
12:296:4 Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition
DOI:10.1016/j.jallcom.2010.11.166 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Oh, Tae Su;Park, Ah Hyun;Jeong, Hyun;Kim, Hun;Seo, Tae Hoon;Lee, Yong Seok;Jeong, Mun Seok;Lee, Kang Jea;Suh, Eun-Kyung;
12:296:5 Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer
DOI:10.1016/j.jallcom.2011.08.025 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Liu, Kuang-Wei;Young, Sheng-Joue;Chang, Shoou-Jinn;Hsueh, Tao-Hung;Hung, Hung;Chen, Shi-Xiang;Chen, Yue-Zhang;
12:296:6 Growth and optical properties of high-density InN nanodots
DOI:10.1016/j.jcrysgro.2010.07.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Ke, W. C.;Lee, S. J.;Kao, C. Y.;Chen, W. K.;Chou, W. C.;Lee, M. C.;Chang, W. H.;Lin, W. J.;Cheng, Y. C.;Lee, T. C.;Lin, J. C.;
12:296:7 Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique
DOI:10.1016/j.jcrysgro.2010.10.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Fong, W. K.;Leung, K. K.;Surya, Charles;
12:296:8 Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities
DOI:10.1016/j.jcrysgro.2011.11.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Jeon, Dae-Woo;Lee, Seung-Jae;Jeong, Tak;Baek, Jong Hyeob;Park, Jae-Woo;Jang, Lee-Woon;Kim, Myoung;Lee, In-Hwan;Ju, Jin-Woo;
12:296:9 RF-MBE growth of cubic InN nano-scale dots on cubic GaN
DOI:10.1016/j.jcrysgro.2012.12.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Suzuki, Junichiro;Orihara, Misao;Yagi, Shuhei;Hijikata, Yasuto;Yaguchi, Hiroyuki;
12:296:10 Optical and structural studies of InN/GaN dots with varying GaN cap thickness
DOI:10.1016/j.jcrysgro.2011.10.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Ke, Wen-Cheng;Kao, Chia-Yu;Houng, Wei-Chung;Wei, Chih-An;
12:297:1 Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 mm diameter Si (111) substrate
DOI:10.1016/j.jcrysgro.2014.05.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Liu, H. F.;Seng, H. L.;Teng, J. H.;Chua, S. J.;Chi, D. Z.;
12:297:2 Fabricating high-quality GaN-based nanobelts by strain-controlled cracking of thin solid films for application in piezotronics
DOI:10.1016/j.nanoen.2011.12.007 JN:NANO ENERGY PY:2012
TC:4 AU: Liu, H. F.;Liu, W.;Chua, S. J.;Chi, D. Z.;
12:297:3 Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates
DOI:10.1116/1.3443220 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:10 AU: Liu, H. F.;Liu, W.;Chua, S. J.;
12:297:4 Fabrication and transfer of nanoporous alumina thin films for templating applications: Metal dots array deposition and porous ZnO film growth
DOI:10.1016/j.tsf.2010.12.023 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Liu, H. F.;Lim, E. S.;Tung, P. K. H.;Xiang, N.;
12:297:5 Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111)
DOI:10.1016/j.jcrysgro.2009.11.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Kim, Deok Kyu;
12:297:6 Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
DOI:10.1016/j.jcrysgro.2012.08.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Gautier, S.;Moudakir, T.;Patriarche, G.;Rogers, D. J.;Sandana, V. E.;Teherani, F. Hosseini;Bove, P.;El Gmili, Y.;Pantzas, K.;Sundaram, Suresh;Troadec, D.;Voss, P. L.;Razeghi, M.;Ougazzaden, A.;
12:297:7 Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
DOI:10.1063/1.4729044 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Fritze, S.;Drechsel, P.;Stauss, P.;Rode, P.;Markurt, T.;Schulz, T.;Albrecht, M.;Blaesing, J.;Dadgar, A.;Krost, A.;
12:297:8 Anisotropic bow and plastic deformation of GaN on silicon
DOI:10.1016/j.jcrysgro.2012.07.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Dadgar, A.;Fritze, S.;Schulz, O.;Hennig, J.;Blaesing, J.;Witte, H.;Diez, A.;Heinle, U.;Kunze, M.;Daumiller, I.;Haberland, K.;Krost, A.;
12:297:9 Microstructure and Raman scattering of Ag-doping ZnO films deposited on buffer layers
DOI:10.1016/j.jcrysgro.2014.02.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Bian, H. Q.;Ma, S. Y.;Zhang, Z. M.;Gao, J. M.;Zhu, H. B.;
12:298:1 Electrochemical synthesis of highly ordered nanowires with a rectangular cross section using an in-plane nanochannel array
DOI:10.1088/0957-4484/25/50/504002 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Sergelius, Philip;Moreno, Josep M. Montero;Rahimi, Wehid;Waleczek, Martin;Zierold, Robert;Goerlitz, Detlef;Nielsch, Kornelius;
12:298:2 Fabrication of Sub-5 nm Nanochannels in Insulating Substrates Using Focused Ion Beam Milling
DOI:10.1021/nl103369g JN:NANO LETTERS PY:2011
TC:44 AU: Menard, Laurent D.;Ramsey, J. Michael;
12:298:3 High Throughput Ultralong (20 cm) Nanowire Fabrication Using a Wafer-Scale Nanograting Template
DOI:10.1021/nl400209n JN:NANO LETTERS PY:2013
TC:9 AU: Yeon, Jeongho;Lee, Young Jae;Yoo, Dong Eun;Yoo, Kyoung Jong;Kim, Jin Su;Lee, Jun;Lee, Jeong Oen;Choi, Seon-Jin;Yoon, Gun-Wook;Lee, Dong Wook;Lee, Gi Seong;Hwang, Hae Chul;Yoon, Jun-Bo;
12:298:4 Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography
DOI:10.1088/0957-4484/21/21/215301 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Park, Joong-Mok;Nalwa, Kanwar Singh;Leung, Wai;Constant, Kristen;Chaudhary, Sumit;Ho, Kai-Ming;
12:298:5 Controlling the motion of DNA in a nanochannel with transversal alternating electric voltages
DOI:10.1088/0957-4484/25/26/265101 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Luan, Binquan;Wang, Chao;Royyuru, Ajay;Stolovitzky, Gustavo;
12:299:1 Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires
DOI:10.1021/nl504241g JN:NANO LETTERS PY:2015
TC:1 AU: Wen, Cheng-Yen;Reuter, Mark C.;Su, Dong;Stach, Eric A.;Ross, Frances M.;
12:299:2 Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition
DOI:10.1088/0957-4484/22/30/305604 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Eisenhawer, Bjoern;Sivakov, Vladimir;Berger, Andreas;Christiansen, Silke;
12:299:3 Si nanostructures grown by picosecond high repetition rate pulsed laser deposition
DOI:10.1016/j.apsusc.2012.10.138 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Pervolaraki, M.;Komninou, Ph.;Kioseoglou, J.;Athanasopoulos, G. I.;Giapintzakis, J.;
12:299:4 Formation of core-shell structured silicon nanoparticles during pulsed laser ablation
DOI:10.1063/1.3374660 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Umezu, Ikurou;Nakayama, Yusuke;Sugimura, Akira;
12:299:5 Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging
DOI:10.1088/0957-4484/22/7/075706 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Eisenhawer, B.;Zhang, D.;Clavel, R.;Berger, A.;Michler, J.;Christiansen, S.;
12:299:6 Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation
DOI:10.1007/s11051-009-9669-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:6 AU: Khang, Yoonho;Lee, Joohyun;
12:299:7 Effects of collision between two plumes on plume expansion dynamics during pulsed laser ablation in background gas
DOI:10.1007/s00339-012-7141-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Umezu, Ikurou;Sakamoto, Naomichi;Fukuoka, Hiroshi;Yokoyama, Yasuhiro;Nobuzawa, Koichiro;Sugimura, Akira;
12:299:8 Emission induced by collision of two plumes during pulsed laser ablation
DOI:10.1007/s00339-010-5772-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:2 AU: Umezu, Ikurou;Yamamoto, Shigeki;Sugimura, Akira;
12:299:9 Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth
DOI:10.1063/1.3530433 JN:APPLIED PHYSICS LETTERS PY:2010
TC:0 AU: Kim, Meekyung;Hashemi, Pouya;Hoyt, Judy L.;
12:299:10 Effect of surrounding gas temperature on the morphological evolution of TiO2 nanoparticles generated by laser ablation in tubular furnace
DOI:10.1007/s11051-011-0674-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:0 AU: Tsuji, Masayuki;Seto, Takafumi;Otani, Yoshio;
12:300:1 Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope
DOI:10.1063/1.4801469 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Naresh-Kumar, G.;Mauder, C.;Wang, K. R.;Kraeusel, S.;Bruckbauer, J.;Edwards, P. R.;Hourahine, B.;Kalisch, H.;Vescan, A.;Giesen, C.;Heuken, M.;Trampert, A.;Day, A. P.;Trager-Cowan, C.;
12:300:2 Striated surface morphology and crystal orientation of m-plane GaN films grown on gamma-LiAlO2(100)
DOI:10.1063/1.3449133 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Wang, K. R.;Ramsteiner, M.;Mauder, C.;Wan, Q.;Hentschel, T.;Grahn, H. T.;Kalisch, H.;Heuken, M.;Jansen, R. H.;Trampert, A.;
12:300:3 Irregular spectral position of E parallel to c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2
DOI:10.1063/1.3667199 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Mauder, C.;Lutsenko, E. V.;Rzheutski, M. V.;Reuters, B.;Zubialevich, V. Z.;Pavlovskii, V. N.;Yablonskii, G. P.;Heuken, M.;Kalisch, H.;Vescan, A.;
12:300:4 Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
DOI:10.1016/j.jcrysgro.2010.03.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Mauder, C.;Reuters, B.;Khoshroo, L. Rahimzadeh;Rzheutskii, M. V.;Lutsenko, E. V.;Yablonskii, G. P.;Woitok, J. F.;Heuken, M.;Kalisch, H.;Jansen, R. H.;
12:300:5 Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
DOI:10.1016/j.jcrysgro.2010.07.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Mauder, C.;Reuters, B.;Wang, K. R.;Fahle, D.;Trampert, A.;Rzheutskii, M. V.;Lutsenko, E. V.;Yablonskii, G. P.;Woitok, J. F.;Chou, M. M. C.;Heuken, M.;Kalisch, H.;Jansen, R. H.;
12:300:6 Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling
DOI:10.1007/s11664-011-1723-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:9 AU: Kamaladasa, Ranga J.;Jiang, Wenkan;Picard, Yoosuf N.;
12:300:7 High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates
DOI:10.1016/j.jcrysgro.2011.06.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Miasojedovas, S.;Mauder, C.;Krotkus, S.;Kadys, A.;Malinauskas, T.;Jarasiunas, K.;Heuken, M.;Kalisch, H.;Vescan, A.;
12:301:1 High-field transport in a graphene nanolayer
DOI:10.1063/1.4769300 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Arora, Vijay K.;Tan, Michael L. P.;Gupta, Chirag;
12:301:2 Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field
DOI:10.1063/1.3514128 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Arora, Vijay K.;Chek, Desmond C. Y.;Tan, Michael L. P.;Hashim, Abdul Manaf;
12:301:3 Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path
DOI:10.1063/1.3688339 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Arora, Vijay K.;Abidin, Mastura Shafinaz Zainal;Tan, Michael L. P.;Riyadi, Munawar A.;
12:301:4 Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor
DOI:10.1063/1.3621885 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Arora, Vijay K.;Abidin, Mastura Shafinaz Zainal;Tembhurne, Saurabh;Riyadi, Munawar A.;
12:301:5 The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
DOI:10.1063/1.3554623 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Riyadi, Munawar A.;Arora, Vijay K.;
12:301:6 Comment on "Theoretical analysis of high-field transport in graphene on a substrate" [J. Appl. Phys. 116, 034507 (2014)]
DOI:10.1063/1.4904849 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Tan, Michael L. P.;Arora, Vijay K.;
12:301:7 Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors
DOI:10.1063/1.3275502 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Abul Khayer, M.;Lake, Roger K.;
12:302:1 Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition
DOI:10.1016/j.jallcom.2012.08.117 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Xiong, H.;Dai, J. N.;Hui, Xiong;Fang, Y. Y.;Tian, W.;Fu, D. X.;Chen, C. Q.;Li, Mingkai;He, Yunbin;
12:302:2 Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD
DOI:10.1016/j.matlet.2013.09.096 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Chen, Yiren;Song, Hang;Li, Dabing;Sun, Xiaojuan;Jiang, Hong;Li, Zhiming;Miao, Guoqing;Zhang, Zhiwei;Zhou, Yue;
12:302:3 Persistent ion beam induced conductivity in zinc oxide nanowires
DOI:10.1063/1.3671164 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Johannes, Andreas;Niepelt, Raphael;Gnauck, Martin;Ronning, Carsten;
12:302:4 Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
DOI:10.1016/j.jallcom.2012.02.111 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Balaji, M.;Claudel, A.;Fellmann, V.;Gelard, I.;Blanquet, E.;Boichot, R.;Pierret, A.;Attal-Tretout, B.;Crisci, A.;Coindeau, S.;Roussel, H.;Pique, D.;Baskar, K.;Pons, M.;
12:302:5 The influence of thickness and ammonia flow rate on the properties of AlN layers
DOI:10.1016/j.mssp.2011.06.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Corekci, S.;Ozturk, M. K.;Cakmak, M.;Ozcelik, S.;Ozbay, E.;
12:302:6 Input/output pulse operation of ZnO nanowire threshold integrators
DOI:10.1088/0957-4484/22/2/025207 JN:NANOTECHNOLOGY PY:2011
TC:1 AU: White, Richard;Colli, Alan;Li, Hongwei;Kivioja, Jani;
12:302:7 Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.10.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Balaji, M.;Ramesh, R.;Arivazhagan, P.;Jayasakthi, M.;Loganathan, R.;Prabakaran, K.;Suresh, S.;Lourdudoss, S.;Baskar, K.;
12:302:8 The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition
DOI:10.1007/s11664-011-1798-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:4 AU: Wang, H.;Li, S. L.;Xiong, H.;Wu, Z. H.;Dai, J. N.;Tian, Y.;Fang, Y. -Y.;Chen, C. Q.;
12:302:9 Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
DOI:10.1007/s10853-010-4973-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:4 AU: Corekci, S.;Ozturk, M. K.;Bengi, A.;Cakmak, M.;Ozcelik, S.;Ozbay, E.;
12:302:10 Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
DOI:10.1007/s00339-013-7857-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Ozturk, M. K.;Corekci, S.;Tamer, M.;Cetin, S. S.;Ozcelik, S.;Ozbay, E.;
12:302:11 Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
DOI:10.1155/2013/383867 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Li, D.;Liu, G. L.;Yang, Y.;Wu, J. H.;Huang, Z. R.;
12:303:1 Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices
DOI:10.1063/1.4796117 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Schiavon, Dario;Binder, Michael;Loeffler, Andreas;Peter, Matthias;
12:303:2 II-VI semiconductor color converters for efficient green, yellow, and red light emitting diodes
DOI:10.1063/1.3453447 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Haase, M. A.;Xie, J.;Ballen, T. A.;Zhang, J.;Hao, B.;Yang, Z. H.;Miller, T. J.;Sun, X.;Smith, T. L.;Leatherdale, C. A.;
12:303:3 Metastable II-VI sulphides: Growth, characterization and stability
DOI:10.1016/j.jcrysgro.2010.10.114 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Prior, K. A.;Bradford, C.;Davidson, I. A.;Moug, R. T.;
12:303:4 Precision laser micromachining of trenches in GaN on sapphire
DOI:10.1116/1.3359593 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:9 AU: Mak, G. Y.;Lam, E. Y.;Choi, H. W.;
12:303:5 Thermal analyses of alternating current light-emitting diodes
DOI:10.1063/1.4823806 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Zhang, Ji-Hong;Wu, Bi-Qing;Shih, Tien-Mo;Lu, Yi-Jun;Gao, Yu-Lin;Chang, Richard Ru-Gin;Chen, Zhong;
12:303:6 Effects of strain on defect structure in II-VI green color converters
DOI:10.1063/1.3517069 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Zhu, Y.;McKernan, S.;Xie, J.;Miller, T. J.;Haase, M. A.;Sun, X.;Smith, T. L.;Leatherdale, C. A.;
12:303:7 Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers
DOI:10.1007/s11664-012-2082-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Moug, R. T.;Sultana, H.;Yao, Y.;Alfaro-Martinez, A.;Peng, L.;Garcia, T.;Shen, A.;Gmachl, C.;Tamargo, M. C.;
12:303:8 Enhanced efficiency of CdMgZnSe down-converted light emitting diodes using light extraction features fabricated by laser-speckle lithography
DOI:10.1063/1.3524024 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Yang, Zhaohui H.;Haase, Michael A.;Leatherdale, Catherine A.;Smith, Terry L.;
12:303:9 Interconnected alternating-current light-emitting diode arrays isolated by laser micromachining
DOI:10.1116/1.3533949 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Mak, Giuseppe Y.;Lam, Edmund Y.;Choi, H. W.;
12:303:10 Effects of Mg content on dark-line defects in II-VI green converters
DOI:10.1016/j.scriptamat.2010.11.045 JN:SCRIPTA MATERIALIA PY:2011
TC:0 AU: Zhu, Y.;Xie, J.;Miller, T. J.;Haase, M. A.;Sun, X.;McKernan, S.;Smith, T. L.;Leatherdale, C. A.;
12:303:11 Laser direct writing of GaN-based light-emitting diodes-The suitable laser source for mesa definition
DOI:10.1063/1.4794844 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Moser, Ruediger;Gossler, Christian;Kunzer, Michael;Koehler, Klaus;Pletschen, Wilfried;Brunne, Jens;Schwarz, Ulrich T.;Wagner, Joachim;
12:304:1 Fabrication of p-type porous GaN on silicon and epitaxial GaN
DOI:10.1063/1.4821191 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Bilousov, O. V.;Geaney, H.;Carvajal, J. J.;Zubialevich, V. Z.;Parbrook, P. J.;Giguere, A.;Drouin, D.;Diaz, F.;Aguilo, M.;O'Dwyer, C.;
12:304:2 Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport
DOI:10.1021/am3020668 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:5 AU: Bilousov, Oieksandr V.;Carvajal, Joan J.;Drouin, Dominique;Mateos, Xavier;Diaz, Francesc;Aguilo, Magdalena.;O'Dwyer, Colm;
12:304:3 Fully Porous GaN p-n Junction Diodes Fabricated by Chemical Vapor Deposition
DOI:10.1021/am504786b JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Bilousov, Oleksandr V.;Carvajal, Joan J.;Geaney, Hugh;Zubiaevich, Vitaly Z.;Parbrook, Peter J.;Martinez, Oscar;Jimenez, Juan;Diaz, Francesc;Aguilo, Magdalena;O'Dwyer, Cohn;
12:304:4 Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN
DOI:10.1063/1.3427352 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Cho, Chu-Young;Kang, Se-Eun;Kim, Ki Seok;Lee, Sang-Jun;Choi, Yong-Seok;Han, Sang-Heon;Jung, Gun-Young;Park, Seong-Ju;
12:304:5 Porous GaN and High-kappa MgO-GaN MOS Diode Layers Grown in a Single Step on Silicon
DOI:10.1021/cm4037023 JN:CHEMISTRY OF MATERIALS PY:2014
TC:0 AU: Bilousov, O. V.;Carvajal, J. J.;Vilalta-Clemente, A.;Ruterana, P.;Diaz, F.;Aguilo, M.;O'Dwyer, C.;
12:304:6 Effect of bromine adsorption on the charge transport in porous silicon-silicon structures
DOI:10.1007/s13391-012-2126-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Olenych, Igor B.;Monastyrskii, Liubomyr S.;Aksimentyeva, Olena I.;Sokolovskii, Bogdan S.;
12:304:7 Photosensitive Structures of Conjugated Polymer - Porous Silicon
DOI:10.1080/15421406.2013.872400 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:1 AU: Monastyrskii, L. S.;Aksimentyeva, O. I.;Olenych, I. B.;Sokolovskii, B. S.;
12:304:8 Modeling of porous silicon junction field effect transistor gas sensors: Insight into NO2 interaction
DOI:10.1063/1.3391620 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Barillaro, G.;Lazzerini, G. M.;Strambini, L. M.;
12:304:9 Fabrication, electrical characterization, and modeling of fully-porous pn junctions
DOI:10.1063/1.3622150 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Bacci, N.;Diligenti, A.;Barillaro, G.;
12:305:1:1 Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures
DOI:10.1063/1.3446895 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Huang, Sen;Chen, Hongwei;Chen, Kevin J.;
12:305:1:2 ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3664912 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Ma, Chenyue;Chen, Hongwei;Zhou, Chunhua;Huang, Sen;Yuan, Li;Roberts, John;Chen, Kevin. J.;
12:305:1:3 Fluorine implantation effects on Ta2O5 dielectrics on polysilicon treated with post rapid thermal annealing
DOI:10.1016/j.apsusc.2013.07.004 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Chen, Hsiang;Kao, Chyuan Haur;Huang, Bo Yun;Lo, Wen Shih;
12:305:1:4 Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics
DOI:10.1063/1.3699029 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Chen, Chao;Liu, Xingzhao;Zhang, Jihua;Tian, Benlang;Jiang, Hongchuan;Zhang, Wanli;Li, Yanrong;
12:305:1:5 The modulation effects of charged dielectric thin films on two-dimensional electron gas in AlGaN/GaN heterostructure
DOI:10.1063/1.4812220 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Liu, Xingzhao;Chen, Chao;Zhu, Jun;Zhang, Wanli;Li, Yanrong;
12:305:2:1 Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures
DOI:10.1007/s13391-014-3356-7 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:4 AU: Reddy, M. Siva Pratap;Lee, Jung-Hee;Jang, Ja-Soon;
12:305:2:2 Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode
DOI:10.1063/1.3622643 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Li, B. K.;Wang, M. J.;Chen, K. J.;Wang, J. N.;
12:305:2:3 Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode
DOI:10.1016/j.matchemphys.2013.10.016 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:5 AU: Reddy, M. Siva Pratap;Son, Dong-Hyeok;Lee, Jung-Hee;Jang, Ja-Soon;Reddy, V. Rajagopal;
12:305:3:1 Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates
DOI:10.1007/s13391-011-1097-4 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:5 AU: Jung, Sungmin;Lee, Sung-Nam;Ahn, Kwang-Soon;Kim, Hyunsoo;
12:305:3:2 Surface fermi level pinning of semipolar n-type GaN surfaces grown on m-plane sapphire substrates
DOI:10.1007/s13391-013-2217-0 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Jung, Sungmin;Lee, Sung-Nam;Ahn, Kwang-Soon;Kim, Hyunsoo;
12:305:3:3 Effect of Light-Ions Implantation on Resistivity of GaN Thin Film
DOI:10.1007/s13391-013-3160-9 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Johra, Fatima Tuz;Jung, Woo-Gwang;
12:305:4:1 Effects of Oxygen Plasma Treatment on V-th Uniformity of Recessed-Gate AlGaN/GaN HEMTs
DOI:10.1007/s13391-013-3216-x JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Hong, Ki-Ha;Choi, Hyuk Soon;Hwang, Injun;Kim, Jongseob;
12:305:4:2 AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode
DOI:10.1007/s13391-014-4128-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Lee, Jung-Yeon;Park, Bong-Ryeol;Kim, Hyungtak;Kim, Jaehan;Cha, Ho-Young;
12:305:4:3 Effects of Dislocations on the Carrier Transport and Optical Properties of GaN Films grown with an in-situ SiNx Insertion Layer
DOI:10.1007/s13391-012-1082-6 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:5 AU: Lee, Yong Seok;Chung, Sang Jo;Suh, Eun-Kyung;
12:306:1 Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects
DOI:10.1063/1.4753798 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Hsu, Hsu-Cheng;Hsu, Geng-Ming;Lai, Yu-shiung;Feng, Zhe Chuan;Tseng, Shuo-Yen;Lundskog, Anders;Forsberg, Urban;Janzen, Erik;Chen, Kuei-Hsien;Chen, Li-Chyong;
12:306:2 Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy
DOI:10.1063/1.3435475 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Kim, Myung Hwa;Baik, Jeong Min;Lee, Seung Joon;Shin, Hae-Young;Lee, Jaeyeon;Yoon, Seokhyun;Stucky, Galen D.;Moskovits, Martin;Wodtke, Alec M.;
12:306:3 Optical waveguide based on ZnO nanowires prepared by a thermal evaporation process
DOI:10.1016/j.jallcom.2012.03.114 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Jiang, D. Y.;Zhao, J. X.;Zhao, M.;Liang, Q. C.;Gao, S.;Qin, J. M.;Zhao, Y. J.;Li, A.;
12:306:4 Polarized Raman scattering of single ZnO nanorod
DOI:10.1063/1.4861874 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yu, J. L.;Lai, Y. F.;Wang, Y. Z.;Cheng, S. Y.;Chen, Y. H.;
12:306:5 Raman scattering from surface optical phonon in diameter modulated AlN nanotips
DOI:10.1063/1.3337112 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Sahoo, Satyaprakash;Dhara, S.;Arora, A. K.;Krishnan, R.;Chandramohan, P.;Srinivasan, M. P.;
12:306:6 Raman mapping probing of tip-induced anomalous polarization behavior in V2O5 waveguiding nanoribbons
DOI:10.1063/1.3323090 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Yan, Bin;Du, Chaoling;Liao, Lei;You, Yumeng;Cheng, Hao;Shen, Zexiang;Yu, Ting;
12:306:7 Role of RuO3 for the formation of RuO2 nanorods
DOI:10.1063/1.3677665 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Music, Denis;Breunung, Johannes;Mraz, Stanislav;Schneider, Jochen M.;
12:306:8 Polarization Raman spectroscopy of GaN nanorod bundles
DOI:10.1063/1.3460811 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Tite, T.;Lee, C. J.;Chang, Y. -M.;
12:307:1 Site-Specific Design of Cone-Shaped Si Nanowires by Exploiting Nanoscale Surface Diffusion for Optimal Photoabsorption
DOI:10.1021/cm201188z JN:CHEMISTRY OF MATERIALS PY:2011
TC:10 AU: Yi, Jaeseok;Lee, Dong Hyun;Park, Won Il;
12:307:2 High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition
DOI:10.1021/nn901180x JN:ACS NANO PY:2010
TC:32 AU: Cansizoglu, Mehmet F.;Engelken, Robert;Seo, Hye-Won;Karabacak, Tansel;
12:307:3 ZnO Nanowire-Based Antireflective Coatings with Double-Nanotextured Surfaces
DOI:10.1021/am4051734 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Lee, Jae Won;Ye, Byeong Uk;Kim, Dong-yeong;Kim, Jong Kyu;Heo, Jong;Jeong, Hu Young;Kim, Myung Hwa;Choi, Won Jun;Baik, Jeong Min;
12:307:4 Nanostructured porous silicon films for terahertz optics
DOI:10.1088/0957-4484/23/32/325301 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Riley, Michael;Redo-Sanchez, Albert;Karampourniotis, Panagiotis;Plawsky, Joel;Lu, Toh-Ming;
12:307:5 In situ control of Au-catalyzed chemical vapor deposited (CVD) Ge nanocone morphology by growth temperature variation
DOI:10.1016/j.jcrysgro.2010.05.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Cho, Hans S.;Kamins, Theodore I.;
12:308:1 Cathodoluminescence-Activated Nanoimaging: Noninvasive Near-Field Optical Microscopy in an Electron Microscope
DOI:10.1021/acs.nanolett.5b00716 JN:NANO LETTERS PY:2015
TC:1 AU: Bischak, Connor G.;Hetherington, Craig L.;Wang, Zhe;Precht, Jake T.;Kaz, David M.;Schlom, Darrell G.;Ginsberg, Naomi S.;
12:308:2 Bright Cathodoluminescent Thin Films for Scanning Nano-Optical Excitation and Imaging
DOI:10.1021/nn404911a JN:ACS NANO PY:2013
TC:6 AU: Kaz, David M.;Bischak, Connor G.;Hetherington, Craig L.;Howard, Hannah H.;Marti, Xavier;Clarkson, James D.;Adamo, Carolina;Schlom, Darrell G.;Ramesh, Ramamoorthy;Aloni, Shaul;Ogletree, D. Frank;Ginsberg, Naomi S.;
12:308:3 Growth direction and morphology of ZnO nanobelts revealed by combining in situ atomic force microscopy and polarized Raman spectroscopy
DOI:10.1103/PhysRevB.81.045415 JN:PHYSICAL REVIEW B PY:2010
TC:14 AU: Lucas, Marcel;Wang, Zhong Lin;Riedo, Elisa;
12:308:4 High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots
DOI:10.1063/1.4811275 JN:AIP ADVANCES PY:2013
TC:4 AU: Yoon, Heayoung P.;Lee, Youngmin;Bohn, Christopher D.;Ko, Seung-Hyeon;Gianfrancesco, Anthony G.;Steckel, Jonathan S.;Coe-Sullivan, Seth;Talin, A. Alec;Zhitenev, Nikolai B.;
12:308:5 Imaging transport in nanowires using near-field detection of light
DOI:10.1016/j.jcrysgro.2011.12.067 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Haegel, N. M.;Chisholm, D. J.;Cole, R. A.;
12:308:6 Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source
DOI:10.1016/j.optmat.2013.02.018 JN:OPTICAL MATERIALS PY:2013
TC:3 AU: Chiba, Akito;Tanaka, Shinnosuke;Inami, Wataru;Sugita, Atsushi;Takada, Kazumasa;Kawata, Yoshimasa;
12:309:1 Structural Properties of AlN Grown on Sapphire at Plasma Self-Heating Conditions Using Reactive Magnetron Sputter Deposition
DOI:10.1007/s11664-010-1275-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:7 AU: Seo, Hui-Chan;Petrov, Ivan;Kim, Kyekyoon;
12:309:2 Structural and optical properties of magnetron-sputtered Er-doped AIN films grown under negative substrate bias
DOI:10.1016/j.apsusc.2014.04.013 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Legrand, Jeremy;Pigeat, Philippe;Easwarakhanthan, Thomas;Rinnert, Herve;
12:309:3 Growth of polycrystalline indium aluminum nitride thin films on silicon (111) substrates
DOI:10.1016/j.mssp.2014.08.036 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Afzal, Naveed;Devarajan, Mutharasu;Ibrahim, Kamarulazizi;
12:309:4 Spectroellipsometric investigation of optical, morphological, and structural properties of reactively sputtered polycrystalline AlN films
DOI:10.1116/1.3372833 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:4 AU: Easwarakhanthan, T.;Hussain, S. S.;Pigeat, P.;
12:309:5 Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
DOI:10.1016/j.tsf.2011.12.034 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Valdueza-Felip, S.;Ibanez, J.;Monroy, E.;Gonzalez-Herraez, M.;Artus, L.;Naranjo, F. B.;
12:309:6 Two-step method for the deposition of AlN by radio frequency sputtering
DOI:10.1016/j.tsf.2013.07.062 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Monteagudo-Lerma, L.;Valdueza-Felip, S.;Nunez-Cascajeroa, A.;Gonzalez-Herraez, M.;Monroy, E.;Naranjo, F. B.;
12:309:7 Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering
DOI:10.1016/j.jcrysgro.2010.05.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Valdueza-Felip, S.;Naranjo, F. B.;Gonzalez-Herraez, M.;Lahourcade, L.;Monroy, E.;Fernandez, S.;
12:309:8 Structural and electrical properties of AlxIn1-xN (0.10 <= x <= 0.94) films grown on sapphire substrates
DOI:10.1557/JMR.2010.0238 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:7 AU: Han, Qi-Feng;Duan, Cheng-Hong;Du, Guo-Ping;Shi, Wang-Zhou;
12:309:9 Optical modelling of photoluminescence emitted by thin doped films
DOI:10.1016/j.tsf.2011.05.070 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Pigeat, P.;Easwarakhanthan, T.;Briancon, J. L.;Rinnert, H.;
12:309:10 AlN/Fe/AlN nanostructures for magnetooptic magnetometry
DOI:10.1063/1.4868490 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Liskova-Jakubisova, E.;Visnovsky, S.;Siroky, P.;Hrabovsky, D.;Pistora, J.;Harward, I.;Celinski, Z.;
12:310:1 Ab-Initio Study of Structural and Electronic Properties of alpha-Ge Nanowires
DOI:10.1166/jctn.2014.3506 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:4 AU: Tyagi, Neha;Srivastava, Anurag;Pandey, Ravindra;
12:310:2 Structural and electronic properties of AlX (X = P, As, Sb) nanowires: Ab initio study
DOI:10.1016/j.matchemphys.2012.08.046 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:16 AU: Srivastava, Anurag;Tyagi, Neha;
12:310:3 First principle investigation of AlAs and AlP compounds and ordered AlAs1-xPx alloys
DOI:10.1016/j.commatsci.2010.08.014 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:11 AU: Annane, F.;Meradji, H.;Ghemid, S.;Hassan, F. El Haj;
12:310:4 Structural and electronic properties of lead nanowires: Ab-initio study
DOI:10.1016/j.matchemphys.2011.02.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:14 AU: Srivastava, Anurag;Tyagi, Neha;Singh, R. K.;
12:310:5 Pressure induced phase transformation and electronic properties of AlAs
DOI:10.1016/j.matchemphys.2010.08.072 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:9 AU: Srivastava, Anurag;Tyagi, Neha;Sharma, U. S.;Singh, R. K.;
12:310:6 Structural and Electronic Properties of AlAs Nanocrystal: Ab-Initio Study
DOI:10.1166/jctn.2013.2832 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:2 AU: Srivastava, Anurag;Tyagi, Neha;
12:310:7 Ab-initio study of structural and electronic properties of AlAs
DOI:10.1080/14786435.2012.685189 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:2 AU: Munjal, N.;Sharma, G.;Vyas, V.;Joshi, K. B.;Sharma, B. K.;
12:310:8 First Principle Study of Structural and Electronic Properties of Silicon Nanowires
DOI:10.1166/jctn.2011.1830 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:3 AU: Srivastava, Anurag;Tyagi, Naha;Singh, R. K.;
12:310:9 Voltage-dependent parameter extraction for graphene nanoribbon interconnect model through ab initio approach
DOI:10.1016/j.tsf.2014.04.095 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Yamacli, Serhan;
12:310:10 Electronic structure of CaX (X = O, S, Se) compounds using Compton spectroscopy
DOI:10.1016/j.commatsci.2011.07.015 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:5 AU: Mishra, M. C.;Sharma, G.;Kothari, R. K.;Vijay, Y. K.;Sharma, B. K.;
12:311:1:1 Quantification of multiple twinning in face centred cubic materials
DOI:10.1016/j.actamat.2010.09.029 JN:ACTA MATERIALIA PY:2011
TC:13 AU: Cayron, C.;
12:311:1:2 CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD
DOI:10.1016/j.apsusc.2012.04.023 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Said-Bacar, Z.;Prathap, P.;Cayron, C.;Mermet, F.;Leroy, Y.;Antoni, F.;Slaoui, A.;Fogarassy, E.;
12:311:1:3 Local band bending and grain-to-grain interaction induced strain nonuniformity in polycrystalline CdTe films
DOI:10.1103/PhysRevB.89.035310 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Consonni, V.;Baier, N.;Robach, O.;Cayron, C.;Donatini, F.;Feuillet, G.;
12:311:1:4 Effects of chlorine drag on the annealing-induced abnormal grain growth in polycrystalline CdTe
DOI:10.1016/j.jcrysgro.2010.11.156 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Consonni, V.;Feuillet, G.;
12:311:2:1 Microstructure and lattice bending in polycrystalline laser-crystallized silicon thin films for photovoltaic applications
DOI:10.1016/j.tsf.2010.07.058 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Maeder, X.;Niederberger, C.;Christiansen, S.;Bochmann, A.;Andrae, G.;Gawlik, A.;Falk, F.;Michler, J.;
12:311:2:2 TEM analysis of Si thin films prepared by diode laser induced solid phase epitaxy at high temperatures
DOI:10.1016/j.matlet.2014.02.006 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Schmidt, T.;Labar, J. L.;Falk, F.;
12:311:2:3 Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications
DOI:10.1016/j.tsf.2012.08.004 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Schmidt, T.;Hoeger, I.;Gawlik, A.;Andrae, G.;Falk, F.;
12:311:2:4 Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing
DOI:10.1016/j.tsf.2011.10.100 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Skibitzki, Oliver;Yamamoto, Yuji;Schubert, Markus Andreas;Tillack, Bernd;
12:311:3:1 Effect of initial grain sizes on the grain boundary network during grain boundary engineering in Alloy 690
DOI:10.1557/jmr.2013.37 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:3 AU: Liu, Tingguang;Xia, Shuang;Li, Hui;Zhou, Bangxin;Bai, Qin;Su, Cheng;Cai, Zhigang;
12:311:3:2 Statistics of twin-related domains and the grain boundary network
DOI:10.1016/j.actamat.2013.07.031 JN:ACTA MATERIALIA PY:2013
TC:1 AU: Mason, Jeremy K.;Johnson, Oliver K.;Reed, Bryan W.;Li, Shiu Fai;Stolken, James S.;Kumar, Mukul;
12:311:3:3 Effect of the pre-existing carbides on the grain boundary network during grain boundary engineering in a nickel based alloy
DOI:10.1016/j.matchar.2014.02.011 JN:MATERIALS CHARACTERIZATION PY:2014
TC:1 AU: Liu, Tingguang;Xia, Shuang;Li, Hui;Zhou, Bangxin;Bai, Qin;
12:311:3:4 The highly twinned grain boundary network formation during grain boundary engineering
DOI:10.1016/j.matlet.2014.06.166 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Liu, Tingguang;Xia, Shuang;Li, Hui;Zhou, Bangxin;Bai, Qin;
12:312:1 Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
DOI:10.1063/1.4869218 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Barbosa, B. G.;Arakaki, H.;de Souza, C. A.;Pusep, Yu. A.;
12:312:2 Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
DOI:10.1063/1.3671367 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Fickenscher, M. A.;Jackson, H. E.;Smith, L. M.;Yarrison-Rice, J. M.;Kang, J. H.;Paiman, S.;Gao, Q.;Tan, H. H.;Jagadish, C.;
12:312:3 Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires
DOI:10.1063/1.4803494 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Pusep, Yu. A.;Arakaki, H.;de Souza, C. A.;Rodrigues, A. D.;Haapamaki, C. M.;LaPierre, R. R.;
12:312:4 Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
DOI:10.1063/1.4816288 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Guimaraes, F. E. G.;Caface, R. A.;Arakaki, H.;de Souza, C. A.;Pusep, Yu. A.;
12:312:5 Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires
DOI:10.1063/1.4792301 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Caface, R. A.;Guimaraes, F. E. G.;Arakaki, H.;de Souza, C. A.;Pusep, Yu. A.;
12:313:1 Probing channel temperature profiles in AlxGa1-xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy
DOI:10.1063/1.4893603 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kyaw, L. M.;Bera, L. K.;Liu, Y.;Bera, M. K.;Singh, S. P.;Dolmanan, S. B.;Tan, H. R.;Bhat, T. N.;Chor, E. F.;Tripathy, S.;
12:313:2 Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography
DOI:10.1063/1.3359651 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Batten, T.;Manoi, A.;Uren, M. J.;Martin, T.;Kuball, M.;
12:313:3 Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique
DOI:10.1063/1.4813912 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Ma, Xiao-Hua;Zhu, Jie-Jie;Liao, Xue-Yang;Yue, Tong;Chen, Wei-Wei;Hao, Yue;
12:313:4 Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
DOI:10.1063/1.4793196 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Silvestri, Marco;Uren, Michael J.;Kuball, Martin;
12:313:5 Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping
DOI:10.1063/1.4757993 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Killat, N.;Uren, M. J.;Wallis, D. J.;Martin, T.;Kuball, M.;
12:313:6 Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography
DOI:10.1063/1.4865296 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Hodges, C.;Pomeroy, J.;Kuball, M.;
12:313:7 Impact ionization in N-polar AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4892449 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Killat, N.;Uren, M. J.;Keller, S.;Kolluri, S.;Mishra, U. K.;Kuball, M.;
12:313:8 Anti-Stokes fluorescence imaging of microscale thermal fields in thin films
DOI:10.1063/1.3606429 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Kuzmin, A. N.;Baev, A.;Kachynski, A. V.;Fisher, T. S.;Shakouri, A.;Prasad, P. N.;
12:314:1 Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser
DOI:10.1063/1.4883863 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Yun, J.;Varalmov, S.;Huang, J.;Kim, K.;Green, M. A.;
12:314:2 Sputtered amorphous silicon thin films for diode laser crystallization
DOI:10.1016/j.matlet.2011.09.084 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Schmidl, G.;Andrae, G.;Bergmann, J.;Gawlik, A.;Hoeger, I.;Sill, I.;Steglich, M.;Falk, F.;Mayer, G.;
12:314:3 Impurity effects on the laser-induced crystallization of thin amorphous silicon film on glass substrate
DOI:10.1007/s00339-010-5987-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:4 AU: Kim, Pilkyu;Moon, Seung-Jae;Jeong, Sungho;
12:314:4 CW-diode laser crystallization of sputtered amorphous silicon on glass, SiNx, and SiO2 intermediate layers
DOI:10.1007/s10853-013-7230-z JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Schmidl, G.;Andrae, G.;Bergmann, J.;Gawlik, A.;Hoeger, I.;Anders, S.;Schmidl, F.;Tympel, V.;Falk, F.;
12:314:5 Defect annealing in ultra-thin polycrystalline silicon films on glass: Rapid thermal versus laser processing
DOI:10.1016/j.matlet.2013.05.107 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Li, Wei;Varlamov, Sergey;Dore, Jonathon;Green, Martin;
12:314:6 The effect of rapid thermal annealed seed layer on the epitaxial poly-Si thin film solar cell's structure quality and performance
DOI:10.1016/j.matlet.2014.06.155 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Li, Wei;Varlamov, Sergey;Xue, Chaowei;
12:314:7 Effects of irradiation conditions on the lateral grain growth during laser crystallization of amorphous silicon films on borosilicate glass substrates
DOI:10.1007/s00339-011-6425-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:1 AU: Kim, Pilkyu;Moon, Seung-Jae;Jeong, Sungho;
12:314:8 Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films
DOI:10.1063/1.4704559 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Weizman, M.;Klimm, C.;Nickel, N. H.;Rech, B.;
12:314:9 Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers
DOI:10.1016/j.apsusc.2014.06.161 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Li, Wei;Varlamov, Sergey;Xue, Chaowei;
12:314:10 Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
DOI:10.1016/j.jcrysgro.2013.11.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Voelskow, M.;Endler, R.;Schumann, T.;Muecklich, A.;Ou, X.;Liepack, E. H.;Gebel, T.;Peeva, A.;Skorupa, W.;
12:314:11 Simplified process for dot sequential lateral solidification of sputtered amorphous silicon thin films
DOI:10.1016/j.matlet.2012.06.058 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Liu, Chao;Jia, Xiaojie;Ai, Bin;Duan, Chunyan;Shen, Hui;
12:314:12 Activation behavior of boron implanted poly-Si on glass substrate
DOI:10.1016/j.tsf.2010.02.060 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Furuta, M.;Shimamura, K.;Tsubokawa, H.;Tokushige, K.;Furuta, H.;Hirao, T.;
12:315:1:1 Low-frequency noise properties of beryllium delta-doped GaAs/AlAs quantum wells near the Mott transition
DOI:10.1063/1.4792741 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Palenskis, V.;Matukas, J.;Pralgauskaite, S.;Seliuta, D.;Kasalynas, I.;Subacius, L.;Valusis, G.;Khanna, S. P.;Linfield, E. H.;
12:315:1:2 Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique
DOI:10.1063/1.3576104 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Kayis, Cemil;Zhu, C. Y.;Wu, Mo;Li, X.;Oezguer, Uemit;Morkoc, Hadis;
12:315:1:3 Dopant mapping of Be delta-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy
DOI:10.1063/1.4765360 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Ebert, Ph.;Landrock, S.;Chiu, Y. P.;Breuer, U.;Dunin-Borkowski, R. E.;
12:315:1:4 Device reliability study of high gate electric field effects in AlGaN/GaN high electron mobility transistors using low frequency noise spectroscopy
DOI:10.1063/1.3475991 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Rao, Hemant;Bosman, Gijs;
12:315:1:5 MBE growth and transport properties of silicon delta-doped GaAs/AlAs quantum well structures for terahertz frequency detection
DOI:10.1016/j.jcrysgro.2010.02.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Lachab, M.;Khanna, S. P.;Harrison, P.;Linfield, E. H.;Cerskus, A.;Kundrotas, J.;Seliuta, D.;Valusis, G.;
12:315:2:1 Contribution to the 1/f noise analysis in a bi-dimensional electron gas
DOI:10.1063/1.4821129 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Mouetsi, Souheil;El Hdiy, Abdelillah;
12:315:2:2 Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
DOI:10.1063/1.3601855 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Mutta, Geeta Rani;Routoure, Jean Marc;Guillet, Bruno;Mechin, Laurence;Grandal, Javier;Martin-Horcajo, Sara;Brazzini, Tommaso;Calle, Fernando;Sanchez-Garcia, Miguel A.;Marie, Philippe;Ruterana, Pierre;
12:315:2:3 Identification of traps in an epitaxied AlGaAs/GaAs/AlGaAs quantum well structure
DOI:10.1063/1.3460162 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: El Hdiy, Abdelillah;Mouetsi, Souheil;
12:315:3:1 Light emission lifetimes in p-type delta-doped GaAs/AlAs multiple quantum wells near the Mott transition
DOI:10.1063/1.4745893 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Kundrotas, J.;Cerskus, A.;Valusis, G.;Li, L. H.;Linfield, E. H.;Johannessen, A.;Johannessen, E.;
12:315:3:2 Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach
DOI:10.1063/1.3342673 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Kundrotas, Jurgis;Cerskus, Aurimas;Valusis, Gintaras;Johannessen, Agne;Johannessen, Erik;Harrison, Paul;Linfield, Edmund H.;
12:315:3:3 Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlXGa1-XAs heterostructures
DOI:10.1063/1.3483240 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Kundrotas, J.;Cerskus, A.;Nargeliene, V.;Suziedelis, A.;Asmontas, S.;Gradauskas, J.;Johannessen, A.;Johannessen, E.;Umansky, V.;
12:315:4:1 Low frequency noise in InSb/GaAs and InSb/Si channels
DOI:10.1063/1.3483233 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Dobbert, J.;Tran, L.;Hatami, F.;Masselink, W. T.;Kunets, Vas. P.;Salamo, G. J.;
12:315:4:2 A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE
DOI:10.1016/j.jcrysgro.2010.12.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Dobbert, Julia;Tran, Lien;Hatami, Fariba;Kunets, Vasyl P.;Salamo, Gregory J.;Masselink, W. Ted;
12:316:1 Photoluminescence origins of the porous silicon nanowire arrays
DOI:10.1063/1.3645049 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Lin, L. H.;Sun, X. Z.;Tao, R.;Li, Z. C.;Feng, J. Y.;Zhang, Z. J.;
12:316:2 The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays
DOI:10.1088/0957-4484/22/7/075203 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Lin, Linhan;Sun, Xianzhong;Tao, Ran;Feng, Jiayou;Zhang, Zhengjun;
12:316:3 ZnO nanostructures produced by laser ablation in water: Optical and structural properties
DOI:10.1016/j.apsusc.2012.03.087 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Fazio, E.;Mezzasalma, A. M.;Mondio, G.;Neri, F.;Saija, R.;
12:316:4 Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires
DOI:10.1088/0957-4484/21/20/205601 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Kim, S.;Kim, C. O.;Shin, D. H.;Hong, S. H.;Kim, M. C.;Kim, J.;Choi, S-H;Kim, T.;Elliman, R. G.;Kim, Y-M;
12:316:5 Optical and structural properties of pulsed laser ablation deposited ZnO thin film
DOI:10.1016/j.apsusc.2010.09.092 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Fazio, E.;Mezzasalma, A. M.;Mondio, G.;Serafino, T.;Barreca, F.;Caridi, F.;
12:316:6 Direct radiative recombination in the Se-terminated nanoscale Si porous structure
DOI:10.1016/j.apsusc.2012.03.146 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Lin, L. H.;Li, Z. C.;Feng, J. Y.;Zhang, Z. J.;
12:316:7 Preparation of luminescent and optical limiting silicon nanostructures by nanosecond-pulsed laser ablation in liquids
DOI:10.1016/j.matchemphys.2011.07.037 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:7 AU: Fazio, E.;Barreca, F.;Spadaro, S.;Curro, G.;Neri, F.;
12:316:8 The role of surface terminations on the band structure and optical properties of silicon nanonets
DOI:10.1016/j.apsusc.2010.09.047 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Lin, L. H.;Li, D. X.;Feng, J. Y.;Wang, Y.;
12:317:1 Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
DOI:10.1063/1.3484152 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Jeon, Joon-Woo;Park, Seong-Han;Jung, Se-Yeon;Lee, Sang Youl;Moon, Jihyung;Song, June-O;Seong, Tae-Yeon;
12:317:2 Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes
DOI:10.1063/1.3662421 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Moon, Seon Young;Son, Jun Ho;Choi, Kyung Jin;Lee, Jong-Lam;Jang, Ho Won;
12:317:3 Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces
DOI:10.1016/j.apsusc.2014.07.200 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Choi, Yunju;Kim, Yangsoo;Ahn, Kwang-Soon;Kim, Hyunsoo;
12:317:4 Effects of W diffusion barrier on inhibition of AlN formation in Ti/W/Al ohmic contacts on N-face n-GaN
DOI:10.1063/1.3665623 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Song, Yang Hee;Son, Jun Ho;Kim, Buem Joon;Yu, Hak Ki;Yoo, Chul Jong;Lee, Jong-Lam;
12:317:5 Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures
DOI:10.1063/1.4770365 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Abraham, Michael;Weng, Xiaojun;Choi, Won Hyuck;Downey, Brian P.;Mohney, Suzanne E.;
12:317:6 Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes
DOI:10.1016/j.tsf.2010.08.103 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Lin, Yow-Jon;
12:317:7 Towards proper characterization of nonlinear metal-semiconductor contacts. Generalization of the transmission line method
DOI:10.1063/1.3619813 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Piotrzkowski, R.;Litwin-Staszewska, E.;Grzanka, Sz.;
12:317:8 Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-facen-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
DOI:10.1116/1.3678490 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:3 AU: Jeon, Joon-Woo;Yum, Woong-Sun;Seong, Tae-Yeon;Lee, Sang Youl;Song, June-O;
12:317:9 The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
DOI:10.1063/1.3690878 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Chung, Roy B.;Chen, Hung-Tse;Pan, Chih-Chien;Ha, Jun-Seok;DenBaars, Steven P.;Nakamura, Shuji;
12:317:10 Numerical approach to generalized transmission line model and its application to Au/Sn/p-HgCdTe contact
DOI:10.1063/1.4873303 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: He, Kai;Li, Yang;Chen, Xing;Hua, Hua;Gao, Yan-Lin;Ye, Zhen-Hua;Lin, Chun;Wang, Jian-Xin;Zhang, Qin-Yao;
12:317:11 Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
DOI:10.1007/s11664-012-2136-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Jeon, Joon-Woo;Seong, Tae-Yeon;Namgoong, Gon;
12:317:12 Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes
DOI:10.1116/1.4773006 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Lim, Wantae;Sung, Youngkyu;Kim, Sung-Joon;Shin, Young-Chul;Jang, Tae-Sung;Park, Tae-Young;Kim, Gi-Bum;Song, Sang-Yeob;Lee, Wan-Ho;Kim, Yong-Il;Kim, Sung-Tae;Pearton, Stephen J.;
12:318:1 GaN light-emitting diodes on glass substrates with enhanced electroluminescence
DOI:10.1039/c2jm34405j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Choi, Jun Hee;Ahn, Ho Young;Lee, Yun Sung;Park, Kyungwoo;Kim, Tae-Ho;Cho, Kyung Sang;Baik, Chan Wook;Kim, Sun Il;Yoo, Hyobin;Lee, Eun Hong;Choi, Byoung Lyong;Kim, Sung-Dae;Kim, Young-Woon;Kim, Miyoung;Hwang, Sungwoo;
12:318:2 Titanium dioxide nanoswords with highly reactive, photocatalytic facets
DOI:10.1088/0957-4484/21/48/485601 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Sosnowchik, Brian D.;Chiamori, Heather C.;Ding, Yong;Ha, Jong-Yoon;Wang, Zhong Lin;Lin, Liwei;
12:318:3 ZnO nanostructures with controlled morphologies on a glass substrate
DOI:10.1088/0957-4484/21/26/265603 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Kim, Yong-Jin;Jeon, Jong-Myeong;Choi, Jun Hee;Park, Sung Soo;Il Kim, Sun;Baik, Chan Wook;Kim, Miyoung;Kim, Jong Min;Yi, Gyu-Chul;
12:318:4 Fabrication of micro-structures on a PVDF/TiO2 nano-composite film using photocatalytic lithography
DOI:10.1016/j.apsusc.2012.01.103 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: An, Ningli;Liu, Hongzhong;Ding, Yucheng;Lu, Bingheng;Zhang, Min;
12:318:5 Localized heating induced chemical vapor deposition for one-dimensional nanostructure synthesis
DOI:10.1063/1.3304835 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Sosnowchik, Brian D.;Lin, Liwei;Englander, Ongi;
12:318:6 Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method
DOI:10.1088/0957-4484/22/20/205602 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Hong, Young Joon;Kim, Yong-Jin;Jeon, Jong-Myeong;Kim, Miyoung;Choi, Jun Hee;Baik, Chan Wook;Il Kim, Sun;Park, Sung Soo;Kim, Jong Min;Yi, Gyu-Chul;
12:318:7 Pick, break, and placement of one-dimensional nanostructures for direct assembly and integration
DOI:10.1063/1.3374879 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Sosnowchik, Brian D.;Chang, Jiyoung;Lin, Liwei;
12:318:8 Photoconductive Piezoelectric Polymer Made From a Composite of P(VDF-TrFE) and TiOPc
DOI:10.1080/00150193.2013.820974 JN:FERROELECTRICS PY:2013
TC:2 AU: Chang, Wen-Chi;Wang, An-Bang;Lee, Chih-Kung;Chen, Han-Lung;Ko, Wen-Ching;Lin, Chih-Ting;
12:318:9 Formation of 10-mu m-level patterned organic thin film using microthermal evaporation
DOI:10.1116/1.3554400 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Choi, Jun Hee;Zoulkarneev, Andrei;Noh, Tae Yong;Lee, Young Gu;Il Kim, Sun;Park, Sung Soo;Baik, Chan Wook;Choi, Byoung Lyong;Kim, Miyoung;Yi, Gyu-Chul;Kim, Jong Min;
12:319:1:1 Spatiotemporal dynamics in optical energy transfer on the nanoscale and its application to constraint satisfaction problems
DOI:10.1103/PhysRevB.86.125407 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Naruse, Makoto;Aono, Masashi;Kim, Song-Ju;Kawazoe, Tadashi;Nomura, Wataru;Hori, Hirokazu;Hara, Masahiko;Ohtsu, Motoichi;
12:319:1:2 Amoeba-Inspired Nanoarchitectonic Computing: Solving Intractable Computational Problems Using Nanoscale Photoexcitation Transfer Dynamics
DOI:10.1021/la400301p JN:LANGMUIR PY:2013
TC:15 AU: Aono, Masashi;Naruse, Makoto;Kim, Song-Ju;Wakabayashi, Masamitsu;Hori, Hirokazu;Ohtsu, Motoichi;Hara, Masahiko;
12:319:1:3 Decision making based on optical excitation transfer via near-field interactions between quantum dots
DOI:10.1063/1.4898570 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Naruse, Makoto;Nomura, Wataru;Aono, Masashi;Ohtsu, Motoichi;Sonnefraud, Yannick;Drezet, Aurelien;Huant, Serge;Kim, Song-Ju;
12:319:1:4 Amoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network
DOI:10.1063/1.4826143 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Kasai, Seiya;Aono, Masashi;Naruse, Makoto;
12:319:1:5 Magnetic-field-dependent excitation transfer in quantum wells of diluted magnetic semiconductor
DOI:10.1007/s00339-013-8005-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Uchiyama, K.;Kubota, S.;Matsumoto, T.;Kobayashi, K.;Hori, H.;
12:319:1:6 Energy dissipation in energy transfer mediated by optical near-field interactions and their interfaces with optical far-fields
DOI:10.1063/1.4729003 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Naruse, Makoto;Holmstrom, Petter;Kawazoe, Tadashi;Akahane, Kouichi;Yamamoto, Naokatsu;Thylen, Lars;Ohtsu, Motoichi;
12:319:1:7 Unveiling the mechanisms of dressed-photon-phonon etching based on hierarchical surface roughness measure
DOI:10.1063/1.4793233 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Naruse, Makoto;Yatsui, Takashi;Nomura, Wataru;Kawazoe, Tadashi;Aida, Masaki;Ohtsu, Motoichi;
12:319:2:1 Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots
DOI:10.1063/1.4858384 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yeltik, Aydan;Guzelturk, Burak;Hernandez-Martinez, Pedro Ludwig;Akhavan, Shahab;Demir, Hilmi Volkan;
12:319:2:2 Analysis of optical near-field energy transfer by stochastic model unifying architectural dependencies
DOI:10.1063/1.4871668 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Naruse, Makoto;Akahane, Kouichi;Yamamoto, Naokatsu;Holmstrom, Petter;Thylen, Lars;Huant, Serge;Ohtsu, Motoichi;
12:319:2:3 Efficient optical excitation transfer in layered quantum dot nanostructures networked via optical near-field interactions
DOI:10.1103/PhysRevB.82.125417 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Naruse, Makoto;Runge, Erich;Kobayashi, Kiyoshi;Ohtsu, Motoichi;
12:319:2:4 Excitonic enhancement of nonradiative energy transfer from a quantum well in the optical near field of energy gradient quantum dots
DOI:10.1063/1.4724109 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Nizamoglu, Sedat;Hernandez-Martinez, Pedro Ludwig;Mutlugun, Evren;Karatay, Durmus Ugur;Demir, Hilmi Volkan;
12:320:1 Effects of gas pressure on the synthesis and photoluminescence properties of Si nanowires in VHF-PECVD method
DOI:10.1007/s00339-012-6960-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Hamidinezhad, Habib;Abdul-Malek, Zulkurnain;Wahab, Yussof;
12:320:2 Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
DOI:10.1007/s10853-011-5435-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:7 AU: Hamidinezhad, Habib;Wahab, Yussof;Othaman, Zulkafli;
12:320:3 Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
DOI:10.1016/j.apsusc.2011.05.130 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Hamidinezhad, Habib;Wahab, Yussof;Othaman, Zulkafli;Ismail, Abd Khamim;
12:320:4 Influence of growth time on morphology and structural properties of silicon nanowires grown by VHF-PECVD
DOI:10.1016/j.jcrysgro.2011.07.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Hamidinezhad, Habib;Wahab, Yussof;Othaman, Zulkafli;Ismail, Abd Khamim;
12:320:5 Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: Synthesis, structural characterization and photoluminescence
DOI:10.1016/j.mssp.2014.06.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Hamidinezhad, Habib;Ashkarran, Ali Akbar;Abdul-Malek, Zulkurnain;
12:320:6 Investigation of growth behavior and properties of Si nanowires grown at various supply times of Ar gas current
DOI:10.1007/s00339-013-7881-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Hamidinezhad, Habib;Abdul-Malek, Zulkurnain;
12:321:1 Enhancement of the performance of InAs quantum dots solar cell by surface modification using Poly-L-Lysine homopolymers
DOI:10.1063/1.4789908 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Makableh, Y. F.;Vasan, R.;Lee, S.;Manasreh, O. M.;
12:321:2 Enhanced performance of solar cells with anti-reflection layer fabricated by nano-imprint lithography
DOI:10.1016/j.solmat.2010.04.064 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:44 AU: Han, Kang-Soo;Shin, Ju-Hyeon;Yoon, Woo-Young;Lee, Heon;
12:321:3 Enhanced performance of surface modified In As quantum dots solar cell by a sol-gel grown tantalum pentoxide antireflection coating
DOI:10.1016/j.solmat.2014.03.055 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Sarker, J. C.;Vasan, R.;Makableh, Y. F.;Lee, S.;Nusir, A. I.;Manasreh, M. O.;
12:321:4 Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO2-TiO2 layer
DOI:10.1016/j.tsf.2014.04.017 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Lin, Yang-Shih;Lien, Shui-Yang;Wuu, Dong-Sing;Huang, Yu-Xuan;Kung, Chung-Yuan;
12:321:5 Rapid fabrication of nanostructured surfaces using nanocoining
DOI:10.1088/0957-4484/23/41/415303 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Zdanowicz, Erik;Dow, Thomas A.;Scattergood, Ronald O.;
12:321:6 Enhanced spectral response by silicon nitride index matching layer in amorphous silicon thin-film solar cells
DOI:10.1016/j.jnoncrysol.2011.12.102 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Hsu, C. H.;Lin, Y. P.;Hsu, H. J.;Tsai, C. C.;
12:322:1 In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
DOI:10.1063/1.4867640 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Ju, Guangxu;Honda, Yoshio;Tabuchi, Masao;Takeda, Yoshikazu;Amano, Hiroshi;
12:322:2 X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE
DOI:10.1016/j.jcrysgro.2010.11.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Ju, Guangxu;Ninoi, Koji;Kamiya, Hajime;Fuchi, Shingo;Tabuchi, Masao;Takeda, Yoshikazu;
12:322:3 Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.08.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Ju, Guangxu;Fuchi, Shingo;Tabuchi, Masao;Amano, Hiroshi;Takeda, Yoshikazu;
12:322:4 In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum wells
DOI:10.1016/j.jcrysgro.2012.09.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Ju, Guangxu;Fuchi, Shingo;Tabuchi, Masao;Takeda, Yoshikazu;
12:322:5 In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy
DOI:10.1063/1.4823809 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ju, Guangxu;Fuchi, Shingo;Tabuchi, Masao;Takeda, Yoshikazu;
12:322:6 Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures
DOI:10.1016/j.jcrysgro.2010.10.201 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Ninoi, Koji;Ju, Guang Xu;Kamiya, Hajime;Fuchi, Shingo;Tabuchi, Masao;Takeda, Yoshikazu;
12:322:7 Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy (vol 407, pg 68, 2014)
DOI:10.1016/j.jcrysgro.2015.02.088 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Ju, Guangxu;Fuchi, Shingo;Tabuchi, Masao;Amanoa, Hiroshi;Takeda, Yoshikazu;
12:323:1 Enhanced photocurrent of a nitride-based photodetector with InN dot-like structures
DOI:10.1364/OME.4.002565 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Hsu, Lung-Hsing;Lin, Chien-Chung;Han, Hau-Vei;Lin, Da-Wei;Lo, Yen-Hua;Hwang, Yi-Chia;Kuo, Hao-Chung;
12:323:2 Light trapping effect of patterned back surface reflectors in substrate-type single and tandem junction thin-film silicon solar cells
DOI:10.1016/j.solmat.2010.04.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:15 AU: Sai, Hitoshi;Kondo, Michio;
12:323:3 Analysis of thin-film silicon solar cells with plasma textured front surface and multi-layer porous silicon back reflector
DOI:10.1016/j.solmat.2010.01.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:10 AU: Ghannam, Moustafa Y.;Abouelsaood, Ahmed A.;Alomar, Abdulazeez S.;Poortmans, Jef;
12:323:4 Wet-etch texturing of ZnO:Ga back layer on superstrate-type microcrystalline silicon solar cells
DOI:10.1016/j.solmat.2011.02.011 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:5 AU: Lai, Kuang-Chieh;Tsai, Fu-Ji;Wang, Jen-Hung;Yeh, Chih-Hung;Houng, Mau-Phon;
12:323:5 Texturing of the back reflector for light trapping enhancement in micromorph thin film solar cells
DOI:10.1016/j.tsf.2011.01.360 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Lai, Kuang-Chieh;Tsai, Fu-Ji;Wang, Jen-Hung;Yeh, Chih-Hung;Houng, Mau-Phon;
12:323:6 Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
DOI:10.1016/j.solmat.2013.07.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:4 AU: Tsai, Yu-Lin;Lin, Chien-Chung;Han, Hau-Vei;Chang, Chun-Kai;Chen, Hsin-Chu;Chen, Kuo-Ju;Lai, Wei-Chi;Sheu, Jin-Kong;Lai, Fang-I;Yu, Peichen;Kuo, Hao-Chung;
12:323:7 High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers
DOI:10.1016/j.tsf.2012.03.056 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Chang, Ping-Kuan;Hsieh, Po-Tsung;Tsai, Fu-Ji;Lu, Chun-Hsiung;Yeh, Chih-Hung;Wang, Na-Fu;Houng, Mau-Phon;
12:324:1 Comparative study of etching high crystalline quality AlN and GaN
DOI:10.1016/j.jcrysgro.2012.12.141 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:11 AU: Guo, W.;Xie, J.;Akouala, C.;Mita, S.;Rice, A.;Tweedie, J.;Bryan, I.;Collazo, R.;Sitar, Z.;
12:324:2 Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
DOI:10.1063/1.4851875 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Trindade, A. J.;Guilhabert, B.;Massoubre, D.;Zhu, D.;Laurand, N.;Gu, E.;Watson, I. M.;Humphreys, C. J.;Dawson, M. D.;
12:324:3 Polarity control and growth of lateral polarity structures in AlN
DOI:10.1063/1.4804575 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Kirste, Ronny;Mita, Seiji;Hussey, Lindsay;Hoffmann, Marc P.;Guo, Wei;Bryan, Isaac;Bryan, Zachary;Tweedie, James;Xie, Jinqiao;Gerhold, Michael;Collazo, Ramon;Sitar, Zlatko;
12:324:4 Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy
DOI:10.1063/1.4866718 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Schubert, F.;Merkel, U.;Mikolajick, T.;Schmult, S.;
12:324:5 Sapphire decomposition and inversion domains in N-polar aluminum nitride
DOI:10.1063/1.4862982 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hussey, Lindsay;White, Ryan M.;Kirste, Ronny;Mita, Seiji;Bryan, Isaac;Guo, Wei;Osterman, Katherine;Haidet, Brian;Bryan, Zachary;Bobea, Milena;Collazo, Ramon;Sitar, Zlatko;
12:324:6 Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
DOI:10.1063/1.4901938 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hiroki, Masanobu;Kumakura, Kazuhide;Kobayashi, Yasuyuki;Akasaka, Tetsuya;Makimoto, Toshiki;Yamamoto, Hideki;
12:324:7 Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
DOI:10.1063/1.3530602 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Zhu, Dandan;McAleese, Clifford;Haeberlen, Maik;Salcianu, Carmen;Thrush, Ted;Kappers, Menno;Phillips, Andrew;Lane, Penelope;Kane, Michael;Wallis, David;Martin, Trevor;Astles, Mike;Hylton, Nicolas;Dawson, Phil;Humphreys, Colin;
12:324:8 Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H-2 and N-2
DOI:10.1016/j.jcrysgro.2011.12.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Kumagai, Yoshinao;Igi, Takahiro;Ishizuki, Masanari;Togashi, Rie;Murakami, Hisashi;Takada, Kazuya;Koukitu, Akinori;
12:324:9 Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars
DOI:10.1016/j.jcrysgro.2013.10.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Kang, Junjie;Li, Zhi;Liu, Zhiqiang;Li, Hongjian;Zhao, Yongbing;Tian, Yingdong;Ma, Ping;Yi, Xiaoyan;Wang, Guohong;
12:324:10 Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices
DOI:10.1016/j.jcrysgro.2015.02.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Schubert, F.;Zybell, S.;Heitmann, J.;Mikolajick, T.;Schmult, S.;
12:325:1 The strength of binary junctions in hexagonal close-packed crystals
DOI:10.1016/j.actamat.2013.02.033 JN:ACTA MATERIALIA PY:2013
TC:7 AU: Wu, C. -C.;Chung, P. W.;Aubry, S.;Munday, L. B.;Arsenlis, A.;
12:325:2 Local ultra-violet surface photovoltage spectroscopy of single thread dislocations in gallium nitrides by Kelvin probe force microscopy
DOI:10.1063/1.4772538 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Liu, Zhenghui;Xu, Ke;Fan, Yingmin;Xu, Gengzhao;Huang, Zengli;Zhong, Haijian;Wang, Jianfeng;Yang, Hui;
12:325:3 a-Type edge dislocation mobility in wurtzite GaN using molecular dynamics
DOI:10.1016/j.scriptamat.2013.05.005 JN:SCRIPTA MATERIALIA PY:2013
TC:4 AU: Weingarten, N. Scott;Chung, Peter W.;
12:325:4 Dislocation cross-slip in GaN single crystals under nanoindentation
DOI:10.1063/1.3593381 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Huang, J.;Xu, K.;Gong, X. J.;Wang, J. F.;Fan, Y. M.;Liu, J. Q.;Zeng, X. H.;Ren, G. Q.;Zhou, T. F.;Yang, H.;
12:325:5 Dislocation junction formation and strength in magnesium
DOI:10.1016/j.actamat.2011.01.026 JN:ACTA MATERIALIA PY:2011
TC:10 AU: Capolungo, L.;
12:325:6 Investigation of the accuracy of the spectral photocurrent method for the determination of minority carrier diffusion length
DOI:10.1063/1.3700246 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Wee, D.;Parish, G.;Nener, B.;
12:325:7 Characterizing short-range vs. long-range spatial correlations in dislocation distributions
DOI:10.1016/j.actamat.2009.11.027 JN:ACTA MATERIALIA PY:2010
TC:9 AU: Chevy, Juliette;Fressengeas, Claude;Lebyodkin, Mikhail;Taupin, Vincent;Bastie, Pierre;Duval, Paul;
12:325:8 Dislocation dynamics simulations of slip systems interactions and forest strengthening in ice single crystal
DOI:10.1080/14786435.2012.699689 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:3 AU: Devincre, B.;
12:325:9 NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate
DOI:10.1063/1.3659475 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Lochner, Zachary;Kim, Hee Jin;Lee, Yi-Che;Zhang, Yun;Choi, Suk;Shen, Shyh-Chiang;Yoder, P. Doug;Ryou, Jae-Hyun;Dupuis, Russell D.;
12:325:10 The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique
DOI:10.1063/1.4746740 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Wee, D.;Parish, G.;Nener, B. D.;
12:326:1 Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation
DOI:10.1063/1.3672074 JN:AIP ADVANCES PY:2011
TC:4 AU: Ou, Xin;Koegler, Reinhard;Wei, Xing;Muecklich, Arndt;Wang, Xi;Skorupa, Wolfgang;Facsko, Stefan;
12:326:2 Acceptor deactivation in individual silicon nanowires: From thick to ultrathin
DOI:10.1063/1.3602924 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Ou, Xin;Geyer, Nadine;Koegler, Reinhard;Werner, Peter;Skorupa, Wolfgang;
12:326:3 Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
DOI:10.1021/nl903228s JN:NANO LETTERS PY:2010
TC:15 AU: Ou, Xin;Das Kanungo, Pratyush;Koegler, Reinhard;Werner, Peter;Goesele, Ulrich;Skorupa, Wolfgang;Wang, Xi;
12:326:4 Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
DOI:10.1002/adma.201001086 JN:ADVANCED MATERIALS PY:2010
TC:5 AU: Ou, Xin;Das Kanungo, Pratyush;Koegler, Reinhard;Werner, Peter;Goesele, Ulrich;Skorupa, Wolfgang;Wang, Xi;
12:326:5 Elastic strain and dopant activation in ion implanted strained Si nanowires
DOI:10.1063/1.3520665 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Minamisawa, R. A.;Habicht, S.;Buca, D.;Carius, R.;Trellenkamp, S.;Bourdelle, K. K.;Mantl, S.;
12:326:6 Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
DOI:10.1063/1.3467138 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Hakkarainen, T.;Douheret, O.;Anand, S.;Fu, L.;Tan, H. H.;Jagadish, C.;
12:326:7 Exploring New Science Through Nanoscale Integration
DOI:10.1557/mrs2010.542 JN:MRS BULLETIN PY:2010
TC:1 AU: Picraux, S. Tom;
12:326:8 Electrical characterization of Omega-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with < 100 >- and < 110 > channel orientations
DOI:10.1016/j.tsf.2011.08.034 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Habicht, Stefan;Feste, Sebastian;Zhao, Qing-Tai;Buca, Dan;Mantl, Siegfried;
12:327:1 The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.11.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:14 AU: Luo, Weike;Wu, Jiejun;Goldsmith, John;Du, Yanhao;Yu, Tongjun;Yang, Zhijian;Zhang, Guoyi;
12:327:2 Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism
DOI:10.1016/j.jcrysgro.2010.05.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Ashraf, H.;Kudrawiec, R.;Weyher, J. L.;Serafinczuk, J.;Misiewicz, J.;Hageman, P. R.;
12:327:3 Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.06.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Yamane, Keisuke;Hashimoto, Yasuhiro;Okada, Narihito;Tadatomo, Kazuyuki;
12:327:4 Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system
DOI:10.1016/j.jcrysgro.2013.11.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Liu, Nanliu;Wu, Jiejun;Li, Wenhui;Luo, Ruihong;Tong, Yuzhen;Zhang, Guoyi;
12:327:5 Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
DOI:10.1016/j.tsf.2011.03.054 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Wong, Yuen-Yee;Chang, Edward Yi;Wu, Yue-Han;Hudait, Mantu K.;Yang, Tsung-Hsi;Chang, Jet-Rung;Ku, Jui-Tai;Chou, Wu-Ching;Chen, Chiang-Yao;Maa, Jer-Shen;Lin, Yueh-Chin;
12:327:6 AlGaN-based ultraviolet photodetector with micropillar structures
DOI:10.1063/1.3354018 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Lai, Wei-Chih;Peng, Li-Chi;Chen, Chien-Chun;Sheu, Jinn-Kong;Shei, Shih-Chang;
12:327:7 A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching
DOI:10.1016/j.apsusc.2013.09.090 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Luo, Weike;Li, Liang;Li, Zhonghui;Xu, Xiaojun;Wu, Jiejun;Liu, Xiangshun;Zhang, Guoyi;
12:327:8 Self-separation of two-inch-diameter freestanding GaN by hydride vapor phase epitaxy and heat treatment of sapphire
DOI:10.1016/j.matlet.2014.06.068 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Li, Xingbin;Wu, Jiejun;Liu, Nanliu;Han, Tong;Kang, Xiangning;Yu, Tongjun;Zhang, Guoyi;
12:327:9 In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering
DOI:10.1063/1.4861170 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Na;Wu, Jiejun;Xu, Hongmei;Liu, Nanliu;Zheng, Tongchang;Lin, Wei;Liu, Chuan;Cai, Duanjun;
12:327:10 Enhanced growth rates and reduced parasitic deposition by the substitution of Cl-2 for HCl in GaN HVPE
DOI:10.1016/j.jcrysgro.2010.04.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Bohnen, Tim;Ashraf, Hina;van Dreumel, Gerbe W. G.;Verhagen, Sjoerd;Weyher, Jan L.;Hageman, Paul R.;Vlieg, Elias;
12:327:11 Vertical geometry ultraviolet photodetectors with high photosensitivity based on nanocrystalline TiO2 films
DOI:10.1016/j.tsf.2012.07.110 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Xiang, W. F.;Yang, P. R.;Wang, A. J.;Zhao, K.;Ni, H.;Zhong, S. X.;
12:328:1 Effect of strain on low-loss electron energy loss spectra of group-III nitrides
DOI:10.1103/PhysRevB.84.245301 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Palisaitis, J.;Hsiao, C. -L.;Junaid, M.;Birch, J.;Hultman, L.;Persson, P. O. A.;
12:328:2 Melting and supercooling studies in submicron Al particles using valence electron energy-loss spectroscopy in a transmission electron microscope
DOI:10.1063/1.3609063 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Palanisamy, Prakash;Howe, James M.;
12:328:3 Density functional and theoretical study of the temperature and pressure dependency of the plasmon energy of solids
DOI:10.1063/1.4898388 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shandiz, M. Attarian;Gauvin, R.;
12:328:4 Plasmon energy from strained GaN quantum wells
DOI:10.1063/1.4813082 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Benaissa, M.;Sigle, W.;Korytov, M.;Brault, J.;Vennegues, P.;van Aken, P. A.;
12:328:5 In situ observation of Cu segregation and phase nucleation at a solid-liquid interface in an Al alloy
DOI:10.1016/j.actamat.2013.04.005 JN:ACTA MATERIALIA PY:2013
TC:1 AU: Palanisamy, Prakash;Howe, James M.;
12:328:6 Temperature dependence of the plasmon energy in liquid and solid phases of pure Al and of an Al-Si alloy using electron energy-loss spectroscopy
DOI:10.1063/1.3624735 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Moorthy, Santhana K. Eswara;Howe, James M.;
12:328:7 Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
DOI:10.1063/1.4861179 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Palisaitis, J.;Lundskog, A.;Forsberg, U.;Janzen, E.;Birch, J.;Hultman, L.;Persson, P. O. A.;
12:328:8 Macroscopic theory of adhesion in solids
DOI:10.1080/14786435.2013.791403 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:1 AU: Fazylov, F. R.;Nevolin, V. K.;
12:328:9 Macroscopic theory of the electron work function in solids
DOI:10.1080/14786435.2014.903007 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Fazylov, F. R.;
12:328:10 Interfacial plasmon at a singular solid-liquid interface in a partially molten aluminum alloy
DOI:10.1103/PhysRevB.85.195305 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Palanisamy, Prakash;Sigle, Wilfried;Howe, James M.;
12:328:11 In-situ extended energy-loss fine structure analysis of the solid and liquid phases in sub-micron Al particles
DOI:10.1063/1.3662382 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Palanisamy, Prakash;Howe, James M.;
12:329:1 Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/mu c-Si:H heterojunction solar cells
DOI:10.1063/1.4831661 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Corpus-Mendoza, Asiel N.;De Souza, M. M.;Hamelmann, Frank;
12:329:2 The Role of High Work-Function Metallic Nanodots on the Performance of a-Si:H Solar Cells: Offering Ohmic Contact to Light Trapping
DOI:10.1021/nn1023544 JN:ACS NANO PY:2010
TC:12 AU: Kim, Jeehwan;Abou-Kandil, Ahmed;Fogel, Keith;Hovel, Harold;Sadana, Devendra K.;
12:329:3 Engineering of Contact Resistance between Transparent Single-Walled Carbon Nanotube Films and a-Si:H Single Junction Solar Cells by Gold Nanodots
DOI:10.1002/adma.201104677 JN:ADVANCED MATERIALS PY:2012
TC:3 AU: Kim, Jeehwan;Hong, Augustin J.;Chandra, Bhupesh;Tulevski, George S.;Sadana, Devendra K.;
12:329:4 Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p(+) a-SiC:H/transparent conducting oxide interface
DOI:10.1063/1.3619185 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Kim, Jeehwan;Abou-Kandil, Ahmed I.;Hong, Augustin J.;Saad, Mohamed M.;Sadana, Devendra K.;Chen, Tze-Chiang;
12:329:5 Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction
DOI:10.1063/1.3606408 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Cannella, G.;Principato, F.;Foti, M.;Di Marco, S.;Grasso, A.;Lombardo, S.;
12:330:1 Solution-processed amorphous silicon surface passivation layers
DOI:10.1063/1.4896687 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Mews, Mathias;Mader, Christoph;Traut, Stephan;Sontheimer, Tobias;Wunnicke, Odo;Korte, Lars;Rech, Bernd;
12:330:2 Fabrication of solution-processed hydrogenated amorphous silicon single-junction solar cells
DOI:10.1063/1.4730614 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Masuda, Takashi;Sotani, Naoya;Hamada, Hiroki;Matsuki, Yasuo;Shimoda, Tatsuya;
12:330:3 Characterization of polydihydrosilane by SEC-MALLS and viscometry
DOI:10.1016/j.polymer.2012.04.046 JN:POLYMER PY:2012
TC:8 AU: Masuda, Takashi;Matsuki, Yasuo;Shimoda, Tatsuya;
12:330:4 Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film
DOI:10.1016/j.tsf.2012.07.028 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Masuda, Takashi;Matsuki, Yasuo;Shimoda, Tatsuya;
12:330:5 Solution-Based Silicon in Thin-Film Solar Cells
DOI:10.1002/aenm.201301871 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:2 AU: Bronger, Torsten;Woebkenberg, Paul H.;Woerdenweber, Jan;Muthmann, Stefan;Paetzold, Ulrich W.;Smirnov, Vladimir;Traut, Stephan;Dagkaldiran, Uemit;Wieber, Stephan;Coelle, Michael;Prodi-Schwab, Anna;Wunnicke, Odo;Patz, Matthias;Trocha, Martin;Rau, Uwe;Carius, Reinhard;
12:330:6 Stability of polydihydrosilane liquid films on solid substrates
DOI:10.1016/j.tsf.2012.03.043 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Masuda, Takashi;Matsuki, Yasuo;Shimoda, Tatsuya;
12:330:7 Characterization of polydihydrosilane by SEC-ALLS and viscometry (vol 53, pg 2973, 2012)
DOI:10.1016/j.polymer.2012.06.026 JN:POLYMER PY:2012
TC:1 AU: Masuda, Takashi;Matsuki, Yasuo;Shimoda, Tatsuya;
12:331:1 Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
DOI:10.1063/1.3623757 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Yang, Changjae;Lee, Sangsoo;Shin, Keun Wook;Oh, Sewoung;Park, Jinsub;Kim, Chang-Zoo;Park, Won-Kyu;Ha, Seung-Kyu;Choi, Won Jun;Yoon, Euijoon;
12:331:2 Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition
DOI:10.1063/1.3492854 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: He, W.;Lu, S. L.;Dong, J. R.;Zhao, Y. M.;Ren, X. Y.;Xiong, K. L.;Li, B.;Yang, H.;Zhu, H. M.;Chen, X. Y.;Kong, X.;
12:331:3 Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium
DOI:10.1016/j.apsusc.2014.09.013 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Jia, S. P.;Chen, G. F.;He, W.;Dai, P.;Chen, J. X.;Lu, S. L.;Yang, H.;
12:331:4 Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
DOI:10.1016/j.jcrysgro.2012.09.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Yang, Changjae;Lee, Sangsoo;Shin, Keun-Wook;Oh, Sewoung;Moon, Daeyoung;Kim, Sung-Dae;Kim, Young-Woon;Kim, Chang-Zoo;Park, Won-kyu;Choi, Won Jun;Park, Jinsub;Yoon, Euijoon;
12:331:5 Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
DOI:10.1063/1.3559739 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Gonzalez, M.;Carlin, A. M.;Dohrman, C. L.;Fitzgerald, E. A.;Ringel, S. A.;
12:331:6 Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
DOI:10.1063/1.4737611 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: He, W.;Lu, S. L.;Jiang, D. S.;Dong, J. R.;Tackeuchi, A.;Yang, H.;
12:331:7 Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy
DOI:10.1063/1.3642981 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Swaminathan, K.;Grassman, T. J.;Yang, L. -M.;Gu, Q.;Mills, M. J.;Ringel, S. A.;
12:331:8 The investigation of GaInP solar cell grown by all-solid MBE
DOI:10.1016/j.jcrysgro.2012.12.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Dai, P.;Lu, S. L.;Zhu, Y. Q.;Ji, L.;He, W.;Tan, M.;Yang, H.;Arimochi, M.;Yoshida, H.;Uchida, S.;Ikeda, M.;
12:332:1 Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field
DOI:10.1103/PhysRevB.81.155301 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Cui, X. Y.;Carter, D. J.;Fuchs, M.;Delley, B.;Wei, S. H.;Freeman, A. J.;Stampfl, C.;
12:332:2 Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations
DOI:10.1063/1.4805057 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Strak, Pawel;Kempisty, Pawel;Ptasinska, Maria;Krukowski, Stanislaw;
12:332:3 Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice
DOI:10.1063/1.4780704 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Lang, Xiao-Li;Xia, Jian-Bai;
12:332:4 Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles
DOI:10.1063/1.3505752 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Cui, X. Y.;Delley, B.;Stampfl, C.;
12:332:5 Band offsets and polarization effects in wurtzite ZnO/Mg0.25Zn0.75O superlattices from first principles
DOI:10.1103/PhysRevB.86.205322 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;Formation of polar InN with surface Fermi level near the valence band;maximum by means of ammonia nitridation;PHYSICAL REVIEW B;86;24;245304;10.1103/PhysRevB.86.245304;DEC 10 2012;2012;Development of InN films for devices is hindered due to metallic In;clusters, formed readily during growth, and unintentional n-type;conductivity of the nominally undoped films, including surface;electron-accumulation layers via the Fermi level pinning into the;conduction band. Plasma nitridation eliminates even large In clusters;from the surface by changing them to two-dimensional InN [Yamaguchi and;Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar;approach, that is, nitridation of In-covered surfaces with ammonia (NH3);to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001);substrates. By means of scanning tunneling microscopy and spectroscopy,;as well as photoelectron spectroscopy, we show that this simple NH3;nitridation provides the hitherto not reported formation of polar;InN(000-1) films with the surface Fermi level close to the valence band;maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84,;205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304;1;0;0;0;1;1098-0121;WOS:000312065400006;;;J;Ghosh, Sankha;English, Niall J.;Ab initio study on optoelectronic properties of interstitially versus;substitutionally doped titania;PHYSICAL REVIEW B;86;23;235203;10.1103/PhysRevB.86.235203;DEC 10 2012;2012;Density functional theory calculations were performed for Cr, N, and C;monodoping in both rutile and anatase phases of crystalline titania. The;formation and binding energies, electronic structure, and optical;properties were determined. It was found that although C has a;predominant preference for occupying a lattice O-site, N has higher;preference for interstitial occupancy in the vicinity of an O atom in;anatase, whereas both prefer to maintain interstitial occupancy in;rutile, albeit with both N and C exhibiting a relatively higher;preference for anatase over rutile. Furthermore, Cr is more;energetically stable in the rutile phase relative to anatase for;substitutional doping, albeit with comparable formation energies for;both interstitial and substitutional doping. Interstitial C-impurities;were observed to occupy the oxygen lattice sites in anatase, but not in;rutile. In terms of N-doping, it was found that interstitial doping;exhibits higher visible light photoactivity than substitutional doping.;1;0;0;0;1;1098-0121;WOS:000312064700003;;;J;Howie, Ross T.;Scheler, Thomas;Guillaume, Christophe L.;Gregoryanz, Eugene;Proton tunneling in phase IV of hydrogen and deuterium;PHYSICAL REVIEW B;86;21;214104;10.1103/PhysRevB.86.214104;DEC 10 2012;2012;Using in situ optical spectroscopy we have investigated the temperature;stability of the mixed atomic and molecular phases IV of dense deuterium;and hydrogen. Through a series of low-temperature experiments at high;pressures, we observe phase III-to-IV transformation, imposing;constraints on the P-T phase diagrams. The spectral features of the;phase IV-III transition and differences in appearances of the isotopes;Raman spectra strongly indicate the presence of proton tunneling in;phase IV. No differences between isotopes were observed in absorption;spectroscopic studies, resulting in identical values for the band gap.;The extrapolation of the combined band gap yields 375 GPa as the minimum;transition pressure to the metallic state of hydrogen (deuterium). The;minute changes in optical spectra above 275 GPa might suggest the;presence of a new solid modification of hydrogen (deuterium), closely;related structurally to phase IV. DOI: 10.1103/PhysRevB. 86.214104;15;1;0;0;15;1098-0121;WOS:000312063700001;;;J;Hrahsheh, Fawaz;Hoyos, Jose A.;Vojta, Thomas;Rounding of a first-order quantum phase transition to a strong-coupling;critical point;PHYSICAL REVIEW B;86;21;214204;10.1103/PhysRevB.86.214204;DEC 10 2012;2012;We investigate the effects of quenched disorder on first-order quantum;phase transitions on the example of the N-color quantum Ashkin-Teller;model. By means of a strong-disorder renormalization group, we;demonstrate that quenched disorder rounds the first-order quantum phase;transition to a continuous one for both weak and strong coupling between;the colors. In the strong-coupling case, we find a distinct type of;infinite-randomness critical point characterized by additional internal;degrees of freedom. We investigate its critical properties in detail and;find stronger thermodynamic singularities than in the random transverse;field Ising chain. We also discuss the implications for higher spatial;dimensions as well as unusual aspects of our renormalization-group;scheme. DOI: 10.1103/PhysRevB.86.214204;Hoyos, Jose/F-2742-2012;2;0;0;0;2;1098-0121;WOS:000312063700002;;;J;Huevonen, D.;Zhao, S.;Ehlers, G.;Mansson, M.;Gvasaliya, S. N.;Zheludev, A.;Excitations in a quantum spin liquid with random bonds;PHYSICAL REVIEW B;86;21;214408;10.1103/PhysRevB.86.214408;DEC 10 2012;2012;We present the results of an inelastic neutron-scattering study on two;bond disordered quasi-two-dimensional quantum magnets;(C4H12N2)Cu-2(Cl1-xBrx)(6) with x = 0.035 and 0.075. We observe an;increase of spin gap, a reduction of magnon bandwidth, and a decrease of;magnon lifetimes compared to the x = 0 sample. Additional magnon damping;is observed at higher energies away from the zone center, which is found;to follow the density of single-particle states. DOI:;10.1103/PhysRevB.86.214408;Instrument, CNCS/B-4599-2012; Ehlers, Georg/B-5412-2008; Huvonen, Dan/A-6664-2008; Mansson, Martin/C-1134-2014;8;0;0;0;8;1098-0121;WOS:000312063700005;;;J;Hwang, Kyusung;Park, Kwon;Kim, Yong Baek;Influence of Dzyaloshinskii-Moriya interactions on magnetic structure of;a spin-1/2 deformed kagome lattice antiferromagnet;PHYSICAL REVIEW B;86;21;214407;10.1103/PhysRevB.86.214407;DEC 10 2012;2012;Motivated by the recent neutron-scattering experiment on Rb2Cu3SnF12;[Nature Phys. 6, 865 (2010)], we investigate the effect of;Dzyaloshinskii-Moriya interactions in a theoretical model for the;magnetic structure of this material. Considering the valence bond solid;ground state, which has a 12-site unit cell, we develop the bond;operator mean-field theory. It is shown that the Dzyaloshinskii-Moriya;interactions significantly modify the triplon dispersions around the;Gamma point and cause a shift of the spin-gap (the minimum triplon gap);position from the K to Gamma point in the first Brillouin zone. The spin;gap is also evaluated in exact diagonalization studies on a 24-site;cluster. We discuss a magnetic transition induced by the;Dzyaloshinskii-Moriya interactions in the bond operator framework.;Moreover, the magnetization process under external magnetic fields is;studied within the exact diagonalization approach. We find that the;results of both approaches are consistent with the experimental;findings. DOI: 10.1103/PhysRevB.86.214407;3;0;0;0;3;1098-0121;WOS:000312063700004;;;J;Ignacio, M.;Pierre-Louis, O.;Impalement dynamics and Brownian motion of solid islands on nanopillars;PHYSICAL REVIEW B;86;23;235410;10.1103/PhysRevB.86.235410;DEC 10 2012;2012;We study the dynamics of solid islands deposited on nanopillars using;kinetic Monte Carlo simulations. The islands are initially placed on the;top of the pillars, in the so-called Cassie-Baxter state. For high;pillars, the dynamics is divided into two phases. The first phase;corresponds to the deterministic and irreversible impalement of the;island. The dynamics of this phase is governed by surface diffusion.;Once the island has collapsed, a second phase is observed where the;island exhibits Brownian motion along the pillars, characterized by a;diffusion constant D-i and a kinetic coefficient K-i accounting for the;interaction of the island with the top of the pillars. The random walk;stops when the island reaches the bottom of the substrate, where it;sticks irreversibly. When the island wettability is small, the island;diffusion constant D-i is controlled by adatom diffusion, and scales as;the inverse of the number of atoms in the island. In contrast, for large;wettabilities, we observe that D-i oscillates as the island size is;increased. The minimum of the oscillations corresponds to;nucleation-limited dynamics, where D-i is independent of the island;size. We also determine the time for partial irreversible collapse on;shorter pillars, leading to the so-called Wenzel state. Finally, we;discuss the orders of magnitude of the typical duration of these;processes.;2;0;0;0;2;1098-0121;WOS:000312064700007;;;J;Jarlborg, T.;Barbiellini, B.;Markiewicz, R. S.;Bansil, A.;Different doping from apical and planar oxygen vacancies in;Ba2CuO4-delta and La2CuO4-delta: First-principles band structure;calculations;PHYSICAL REVIEW B;86;23;235111;10.1103/PhysRevB.86.235111;DEC 10 2012;2012;First-principles band structure calculations for large supercells of;Ba2CuO4-delta and La2CuO4-delta with different distributions and;concentrations of oxygen vacancies show that the effective doping on;copper sites strongly depends on where the vacancy is located. A vacancy;within the Cu layer produces a weak doping effect while a vacancy;located at an apical oxygen site acts as a stronger electron dopant on;the copper layers and gradually brings the electronic structure close to;that of La2-xSrxCuO4. These effects are robust and only depend;marginally on lattice distortions. Our results show that deoxygenation;can reduce the effect of traditional La/Sr or La/Nd substitutions. Our;study clearly identifies location of the dopant in the crystal structure;as an important factor in doping of the cuprate planes.;6;0;0;0;6;1098-0121;WOS:000312064700002;;;J;Kunimori, K.;Nakamura, M.;Nohara, H.;Tanida, H.;Sera, M.;Nishioka, T.;Matsumura, M.;Unusual magnetic order in CeT2Al10 (T = Ru, Os) in comparison with;localized NdFe2Al10;PHYSICAL REVIEW B;86;24;245106;10.1103/PhysRevB.86.245106;DEC 10 2012;2012;We have investigated the magnetic properties in the well localized;compound NdFe2Al10 and the Kondo semiconductor CeT2Al10 (T = Ru, Os) to;clarify the origin of the unusual magnetic order in CeT2Al10. In;NdFe2Al10, the experimental results of the magnetic properties could be;reproduced very well by the mean-field calculation for the;two-sublattice model. In CeT2Al10 we could reproduce the anisotropic;magnetic susceptibility in the paramagnetic region above 60-100 K very;well by the mean-field calculation for the two-sublattice model;introducing an anisotropic exchange interaction and the recently;determined crystalline electric field (CEF) level scheme from Strigari;et al. [Phys. Rev. B 86, 081105 (2012)]. However, in the;antiferromagnetic (AFM) ordered state, we could not reproduce the;experimental results at all in the framework of the mean-field;calculation for the two-sublattice model. We propose that although the;magnetic properties in the paramagnetic region above 60-100 K could be;understood well by a localized picture, the ordered state could not, and;that the c-f hybridization, especially along the a axis, is associated;with the unusual magnetic order in CeT2Al10. DOI:;10.1103/PhysRevB.86.245106;Tanida, Hiroshi/E-1878-2013;14;0;0;0;14;1098-0121;WOS:000312065400003;;;J;Lee, Jin Bae;Hong, Won G.;Kim, Hae Jin;Jaglicic, Z.;Jazbec, S.;Wencka, M.;Jelen, A.;Dolinsek, J.;Canted antiferromagnetism on a nanodimensional spherical surface;geometry: The case of MnCO3 small hollow nanospheres;PHYSICAL REVIEW B;86;22;224407;10.1103/PhysRevB.86.224407;DEC 10 2012;2012;Canted antiferromagnetism on a nanodimensional spherical surface;geometry was investigated on manganese carbonate MnCO3 small hollow;nanospheres of mean diameter 7.0 +/- 0.3 nm and shell thickness of 0.7;nm, by performing magnetic measurements and specific heat study, in;comparison to the bulk form of the same material. Contrary to the;expectation that small magnetic nanoparticles become superparamagnetic,;the phase transition to the canted antiferromagnetic (AFM) state in the;MnCO3 hollow nanospheres is preserved and retains, at a qualitative;level, all the features of the canted AFM state of the bulk material. At;a quantitative level, some significant differences between the hollow;nanospheres and the bulk were observed, which can all be explained by;the weakened interspin interactions in the hollow nanospheres due to;reduced atomic coordination by the neighboring atoms. This makes the;canted AFM structure of the hollow nanospheres more soft and fragile;with respect to external forces like the magnetic field, as compared to;the rigid and robust structure of the bulk material.;1;0;0;0;1;1098-0121;WOS:000312064300002;;;J;Levkivskyi, Ivan P.;Froehlich, Juerg;Sukhorukov, Eugene V.;Theory of fractional quantum Hall interferometers;PHYSICAL REVIEW B;86;24;245105;10.1103/PhysRevB.86.245105;DEC 10 2012;2012;Interference of fractionally charged quasiparticles is expected to lead;to Aharonov-Bohm oscillations with periods larger than the flux quantum.;However, according to the Byers-Yang theorem, observables of an;electronic system are invariant under an adiabatic insertion of a;quantum of singular flux. We resolve this seeming paradox by considering;a microscopic model of electronic interferometers made from a quantum;Hall liquid at filling factor 1/m with the shape of a Corbino disk. In;such interferometers, the quantum Hall edge states are utilized in place;of optical beams, the quantum point contacts play the role of beam;splitters connecting different edge channels, and Ohmic contacts;represent a source and drain of quasiparticle currents. Depending on the;position of Ohmic contacts, one distinguishes interferometers of;Fabry-Perot (FP) and Mach-Zehnder (MZ) type. An approximate ground state;of such interferometers is described by a Laughlin-type wave function,;and low-energy excitations are incompressible deformations of this;state. We construct a low-energy effective theory by restricting the;microscopic Hamiltonian of electrons to the space of incompressible;deformations and show that the theory of the quantum Hall edge so;obtained is a generalization of a chiral conformal field theory. In our;theory, a quasiparticle tunneling operator is found to be a;single-valued function of tunneling point coordinates, and its phase;depends on the topology determined by the positions of Ohmic contacts.;We describe strong coupling of the edge states to Ohmic contacts and the;resulting quasiparticle current through the interferometer with the help;of a master equation. We find that the coherent contribution to the;average quasiparticle current through MZ interferometers does not vanish;after summation over quasiparticle degrees of freedom. However, it;acquires oscillations with the electronic period, in agreement with the;Byers-Yang theorem. Importantly, our theory does not rely on any ad hoc;constructions, such as Klein factors, etc. When the magnetic flux;through an FP interferometer is varied with a modulation gate, current;oscillations have the quasiparticle periodicity, thus allowing for;spectroscopy of quantum Hall edge states. DOI:;10.1103/PhysRevB.86.245105;2;0;0;0;2;1098-0121;WOS:000312065400002;;;J;Li, Chun-Mei;Luo, Hu-Bin;Hu, Qing-Miao;Yang, Rui;Johansson, Borje;Vitos, Levente;Role of magnetic and atomic ordering in the martensitic transformation;of Ni-Mn-In from a first-principles study;PHYSICAL REVIEW B;86;21;214205;10.1103/PhysRevB.86.214205;DEC 10 2012;2012;The composition-dependent lattice parameters, crystal structure, elastic;properties, magnetic moment, and electronic structure of Ni2Mn1+xIn1-x;(0 <= x <= 0.6) are studied by using first-principles calculations. It;is shown that the martensitic phase transition (MPT) from cubic L2(1) to;tetragonal L1(0) accompanies theMn(Mn)-Mn-In ferromagnetic (FM) to;antiferromagnetic (AFM) transition, at around the critical composition x;= 0.32, in agreement with the experimental measurement. The Mn-In atomic;disorder leads to decreasing stability of the martensite relative to the;austenite, which depresses the MPT. The shear elastic constant C' of the;parent phase first decreases slightly with increasing x and then remains;almost unchanged above x = 0.32, indicating C' alone cannot account for;the increase of the MPT temperature with x. The total magnetic moments;for the L2(1) phase are in good agreement with those determined by;experiments, whereas for the L1(0) phase they are slightly larger than;the experimental data due to the possibleMn-In atomic disorder in the;sample. The calculated density of states demonstrate that the covalent;bonding between the minority spin states of Ni and In plays an important;role in both the magnetic and structural stability. DOI:;10.1103/PhysRevB.86.214205;Hu, Qing-Miao/D-3345-2014;5;0;0;0;5;1098-0121;WOS:000312063700003;;;J;Liu, Bin;Seko, Atsuto;Tanaka, Isao;Cluster expansion with controlled accuracy for the MgO/ZnO pseudobinary;system via first-principles calculations;PHYSICAL REVIEW B;86;24;245202;10.1103/PhysRevB.86.245202;DEC 10 2012;2012;Using the cluster analysis of the structure population (CASP) method,;error of cluster expansion (CE) can be controlled. Combining the CASP-CE;with a systematic set of first-principles total energies, a model;wide-gap pseudobinary system with simple crystal structures MgO-ZnO is;revisited. Ground-state structures are exhaustively searched for both;rocksalt and wurtzite structures. A few structures as yet unreported are;found. The vibrational contribution to the Gibbs free-energy is;evaluated by first-principles phonon calculations within the;quasiharmonic approximation. Monte Carlo simulations are then made to;compute grand potentials of two structures using the thermodynamic;integration. DOI: 10.1103/PhysRevB.86.245202;Tanaka, Isao/B-5941-2009; Liu, Bin/N-9955-2014;1;1;0;0;1;1098-0121;WOS:000312065400005;;;J;Liu, Pan;Santana, Juan A. Colon;Dai, Qilin;Wang, Xianjie;Dowben, Peter A.;Tang, Jinke;Sign of the superexchange coupling between next-nearest neighbors in EuO;PHYSICAL REVIEW B;86;22;224408;10.1103/PhysRevB.86.224408;DEC 10 2012;2012;The sign of the superexchange coupling J(2) between next-nearest;neighboring Eu2+ magnetic moments in EuO is a matter subject to debate.;We have obtained evidence that this coupling is of antiferromagnetic;nature (J(2) < 0). EuO thin films grown at different temperatures;suggest that lattice expansion results in enhancement of T-C as clearly;observed in stoichiometric EuO films grown on CaF2 substrates. Resonant;photoemission spectroscopy provides compelling evidence of strong;hybridization between O 2p and Eu 5d6s6p weighted bands, suggesting that;strong superexchange may be mediated by oxygen, thus consistent with the;observed antiferromagnetic behavior between the next-nearest neighboring;Eu atoms via nearest neighbor oxygen in EuO.;Dai, Qilin/K-1437-2013;2;0;0;0;2;1098-0121;WOS:000312064300003;;;J;Luisier, Mathieu;Atomistic modeling of anharmonic phonon-phonon scattering in nanowires;PHYSICAL REVIEW B;86;24;245407;10.1103/PhysRevB.86.245407;DEC 10 2012;2012;Phonon transport is simulated in ultrascaled nanowires in the presence;of anharmonic phonon-phonon scattering. A modified valence-force-field;model containing four types of bond deformation is employed to describe;the phonon band structure. The inclusion of five additional bond;deformation potentials allows us to account for anharmonic effects.;Phonon-phonon interactions are introduced through inelastic scattering;self-energies solved in the self-consistent Born approximation in the;nonequilibrium Green's function formalism. After calibrating the model;with experimental data, the thermal current, resistance, and;conductivity of < 100 >-, < 110 >-, and < 111 >-oriented Si nanowires;with different lengths and temperatures are investigated in the presence;of anharmonic phonon-phonon scattering and compared to their ballistic;limit. It is found that all the simulated thermal currents exhibit a;peak at temperatures around 200 K if phonon scattering is turned on;while they monotonically increase when this effect is neglected.;Finally, phonon transport through Si-Ge-Si nanowires is considered. DOI:;10.1103/PhysRevB.86.245407;12;1;0;0;12;1098-0121;WOS:000312065400007;;;J;Nemirovskii, Sergey K.;Fluctuations of the vortex line density in turbulent flows of quantum;fluids;PHYSICAL REVIEW B;86;22;224505;10.1103/PhysRevB.86.224505;DEC 10 2012;2012;We present an analytical study of fluctuations of the vortex line;density (VLD) in turbulent flows of;quantum fluids. Two cases are considered. The first is the;counterflowing (Vinen) turbulence, where the vortex lines are;disordered, and the evolution of quantity L(t) obeys the Vinen equation.;The second case is the fluctuations of the VLD in a single vortex;bundle, which develops inside the domain of the concentrated;normal-fluid vorticity. The dynamics of the vortex bundle is described;by the Hall-Vinen-Bekarevich-Khalatnikov (HVBK) equations. The latter;case is of special interest, because the set of the quantum vortex;bundles is believed to mimic classical hydrodynamic turbulence. In;steady states the VLD is related to the normal velocity as L = (rho;gamma/rho(s))(2)upsilon(2)(n) for the Vinen case. In the vortex bundle;case, which appears inside the domain of a concentrated vorticity of;normal fluid, the stationary quantity L can be found from the matching;of velocities and is described by L = vertical bar del x v(n)vertical;bar/kappa. In nonstationary situations, and particularly in the;fluctuating turbulent flow, there is a retardation between the;instantaneous value of the normal velocity and the quantity L. This;retardation tends to decrease in accordance with the inner dynamics,;which has a relaxation character. In both cases, the relaxation dynamics;of the VLD is related to fluctuations of the relative velocity. However,;for the Vinen case the rate of temporal change for L(t) is directly;dependent upon delta v(ns), whereas for HVBK dynamics it depends on del;x delta v(ns). Therefore, for the disordered case the spectrum coincides with the spectrum omega(-5/3). In the;case of the bundle arrangement, the spectrum of the VLD varies (at;different temperatures) from omega(1/3) to omega(-5/3) dependencies.;This conclusion may serve as a basis for the experimental determination;of what kind of turbulence is implemented in different types of;generation.;0;0;0;0;0;1098-0121;WOS:000312064300005;;;J;Peelaers, H.;Van de Walle, C. G.;Effects of strain on band structure and effective masses in MoS2;PHYSICAL REVIEW B;86;24;241401;10.1103/PhysRevB.86.241401;DEC 10 2012;2012;We use hybrid density functional theory to explore the band structure;and effective masses of MoS2, and the effects of strain on the;electronic properties. Strain allows engineering the magnitude as well;as the nature (direct versus indirect) of the band gap. Deformation;potentials that quantify these changes are reported. The calculations;also allow us to investigate the transition in band structure from bulk;to monolayer, and the nature and degeneracy of conduction-band valleys.;Investigations of strain effects on effective masses reveal that small;uniaxial stresses can lead to large changes in the hole effective mass.;DOI: 10.1103/PhysRevB.86.241401;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;56;3;0;0;56;1098-0121;WOS:000312065400001;;;J;Phien, Ho N.;Vidal, Guifre;McCulloch, Ian P.;Infinite boundary conditions for matrix product state calculations;PHYSICAL REVIEW B;86;24;245107;10.1103/PhysRevB.86.245107;DEC 10 2012;2012;We propose a formalism to study dynamical properties of a quantum;many-body system in the thermodynamic limit by studying a finite system;with "infinite boundary conditions" where both finite-size effects and;boundary effects have been eliminated. For one-dimensional systems,;infinite boundary conditions are obtained by attaching two boundary;sites to a finite system, where each of these two sites effectively;represents a semi-infinite extension of the system. One can then use;standard finite-size matrix product state techniques to study a region;of the system while avoiding many of the complications normally;associated with finite-size calculations such as boundary Friedel;oscillations. We illustrate the technique with an example of time;evolution of a local perturbation applied to an infinite;(translationally invariant) ground state, and use this to calculate the;spectral function of the S = 1 Heisenberg spin chain. This approach is;more efficient and more accurate than conventional simulations based on;finite-size matrix product state and density-matrix;renormalization-group approaches. DOI: 10.1103/PhysRevB.86.245107;McCulloch, Ian/A-6037-2011;McCulloch, Ian/0000-0002-8983-6327;6;0;0;0;6;1098-0121;WOS:000312065400004;;;J;Polyakov, O. P.;Corbetta, M.;Stepanyuk, O. V.;Oka, H.;Saletsky, A. M.;Sander, D.;Stepanyuk, V. S.;Kirschner, J.;Spin-dependent Smoluchowski effect;PHYSICAL REVIEW B;86;23;235409;10.1103/PhysRevB.86.235409;DEC 10 2012;2012;Electron charge near atomically sharp corrugations at the surfaces of a;solid tends to spill out and smoothen the abrupt variation of the;positions of the positively charged atomic nuclei. The reason is that;electrons are much less localized than nuclei. This has been discussed;already some 70 years ago by Smoluchowski [R. Smoluchowski, Phys. Rev.;60, 661 (1941)], and the corresponding effect of charge redistribution;near surface corrugations bears his name. The Smoluchowski effect;focuses on the total electron charge density. It neglects that;electrons-in addition to charge-also carry a spin. We discuss;spin-dependent electron spill out and demonstrate in a combined;theoretical and experimental work that compelling consequences for;spin-polarization and spin-dependent transport arise at the edges of;magnetic nanostructures due to the spin-dependent Smoluchowski effect.;We find a variation of the tunnel magnetoresistance ratio of more than;20% on a length scale of a few atomic diameters.;3;0;0;0;3;1098-0121;WOS:000312064700006;;;J;Rajeswaran, B.;Khomskii, D. I.;Zvezdin, A. K.;Rao, C. N. R.;Sundaresan, A.;Field-induced polar order at the Neel temperature of chromium in;rare-earth orthochromites: Interplay of rare-earth and Cr magnetism;PHYSICAL REVIEW B;86;21;214409;10.1103/PhysRevB.86.214409;DEC 10 2012;2012;We report field-induced switchable polarization (P similar to 0.2-0.8 mu;C/cm(2)) below the Neel temperature of chromium (T-N(Cr)) in weakly;ferromagnetic rare-earth orthochromites, RCrO3 (R = rare earth) but only;when the rare-earth ion is magnetic. Intriguingly, the polarization in;ErCrO3 (T-C = 133 K) disappears at a spin-reorientation (Morin);transition (T-SR similar to 22 K) below which the weak ferromagnetism;associated with the Cr sublattice also disappears, demonstrating the;crucial role of weak ferromagnetism in inducing the polar order.;Further, the polarization (P) is strongly influenced by an applied;magnetic field, indicating a strong magnetoelectric effect. We suggest;that the polar order occurs in RCrO3, due to the combined effect of the;poling field that breaks the symmetry and the exchange field on the R;ion from the Cr sublattice that stabilizes the polar state. We propose;that a similar mechanism could work in the isostructural rare-earth;orthoferrites RFeO3 as well. DOI: 10.1103/PhysRevB.86.214409;Athinarayanan, Sundaresan/B-2176-2010; Zvezdin, Anatoly/K-2072-2013;24;1;0;0;24;1098-0121;WOS:000312063700006;;;J;Rhim, Jun-Won;Park, Kwon;Self-similar occurrence of massless Dirac particles in graphene under a;magnetic field;PHYSICAL REVIEW B;86;23;235411;10.1103/PhysRevB.86.235411;DEC 10 2012;2012;Intricate interplay between the periodicity of the lattice structure and;that of the cyclotron motion gives rise to a well-known self-similar;fractal structure of the energy eigenvalue, known as the Hofstadter;butterfly, for an electron moving in lattice under magnetic field.;Connected with the n = 0 Landau level, the central band of the;Hofstadter butterfly is especially interesting in the honeycomb lattice.;While the entire Hofstadter butterfly can be in principle obtained by;solving Harper's equations numerically, the weak-field limit, most;relevant for experiment, is intractable owing to the fact that the size;of the Hamiltonian matrix, which needs to be diagonalized, diverges. In;this paper, we develop an effective Hamiltonian method that can be used;to provide an accurate analytic description of the central Hofstadter;band in the weak-field regime. One of the most important discoveries;obtained in this work is that massless Dirac particles always exist;inside the central Hofstadter band no matter how small the magnetic flux;may become. In other words, with its bandwidth broadened by the lattice;effect, the n = 0 Landau level contains massless Dirac particles within;itself. In fact, by carefully analyzing the self-similar recursive;pattern of the central Hofstadter band, we conclude that massless Dirac;particles should occur under arbitrary magnetic field. As a corollary,;the central Hofstadter band also contains a self-similar structure of;recursive Landau levels associated with such massless Dirac particles.;To assess the experimental feasibility of observing massless Dirac;particles inside the central Hofstadter band, we compute the width of;the central Hofstadter band as a function of magnetic field in the;weak-field regime.;5;0;0;0;5;1098-0121;WOS:000312064700008;;;J;Robinson, Zachary R.;Tyagi, Parul;Mowll, Tyler R.;Ventrice, Carl A., Jr.;Hannon, James B.;Argon-assisted growth of epitaxial graphene on Cu(111);PHYSICAL REVIEW B;86;23;235413;10.1103/PhysRevB.86.235413;DEC 10 2012;2012;The growth of graphene by catalytic decomposition of ethylene on Cu(111);in an ultrahigh vacuum system was investigated with low-energy electron;diffraction, low-energy electron microscopy, and atomic force;microscopy. Attempts to form a graphene overlayer using ethylene at;pressures as high as 10 mTorr and substrate temperatures as high as 900;degrees C resulted in almost no graphene growth. By using an argon;overpressure, the growth of epitaxial graphene on Cu(111) was achieved.;The suppression of graphene growth without the use of an argon;overpressure is attributed to Cu sublimation at elevated temperatures.;During the initial stages of growth, a random distribution of rounded;graphene islands is observed. The predominant rotational orientation of;the islands is within +/- 1 degrees of the Cu(111) substrate lattice.;Robinson, Zachary/B-5128-2013;11;1;0;0;11;1098-0121;WOS:000312064700010;;;J;Sheps, Tatyana;Brocious, Jordan;Corso, Brad L.;Guel, O. Tolga;Whitmore, Desire;Durkaya, Goeksel;Potma, Eric O.;Collins, Philip G.;Four-wave mixing microscopy with electronic contrast of individual;carbon nanotubes;PHYSICAL REVIEW B;86;23;235412;10.1103/PhysRevB.86.235412;DEC 10 2012;2012;We review an extensive study of the factors that influence the intensity;of coherent, nonlinear four-wave mixing (FWM) in carbon nanotubes, with;particular attention to the variability inherent to single-walled carbon;nanotubes (SWNTs). Through a combination of spatial imaging and;spectroscopy applied to hundreds of individual SWNTs in optoelectronic;devices, the FWM response is shown to vary systematically with;free-carrier concentration. This dependence is manifested both in the;intrinsic SWNT band structure and also by extrinsic and environmental;effects. We demonstrate the sensitivity of the SWNT FWM signal by;investigating SWNTs transferred from one substrate to another, before;and after the introduction of chemical damage, and with chemical and;electrostatic doping. The results demonstrate FWM as a sensitive;technique for interrogating SWNT optoelectronic properties.;3;0;0;0;3;1098-0121;WOS:000312064700009;;;J;Tian, Zhiting;Esfarjani, Keivan;Chen, Gang;Enhancing phonon transmission across a Si/Ge interface by atomic;roughness: First-principles study with the Green's function method;PHYSICAL REVIEW B;86;23;235304;10.1103/PhysRevB.86.235304;DEC 10 2012;2012;Knowledge on phonon transmittance as a function of phonon frequency and;incidence angle at interfaces is vital for multiscale modeling of heat;transport in nanostructured materials. Although thermal conductivity;reduction in nanostructured materials can usually be described by phonon;scattering due to interface roughness, we show how a Green's function;method in conjunction with the Landauer formalism suggests that;interface roughness induced by atomic mixing can increase phonon;transmission and interfacial thermal conductance. This is an attempt to;incorporate first-principles force constants derived from ab initio;density-functional theory (DFT) into Green's function calculation for;infinitely large three-dimensional crystal structure. We also;demonstrate the importance of accurate force constants by comparing the;phonon transmission and thermal conductance using force constants;obtained from semiempirical Stillinger-Weber potential and;first-principles DFT calculations.;Chen, Gang/J-1325-2014;Chen, Gang/0000-0002-3968-8530;14;0;0;0;14;1098-0121;WOS:000312064700004;;;J;Uhm, Sang Hoon;Yeom, Han Woong;Electron-phonon interaction of one-dimensional and two-dimensional;surface states in indium adlayers on the Si(111) surface;PHYSICAL REVIEW B;86;24;245408;10.1103/PhysRevB.86.245408;DEC 10 2012;2012;We performed angle-resolved photoelectron spectroscopy measurements on;one-and two-dimensional (1D and 2D) metallic surface states in indium;layers on the Si(111) surface as a function of temperature. The;temperature dependence of surface-state energy widths was used to;estimate the electron-phonon coupling constant lambda. The 2D metallic;surface states of the root 7 x root 3-In layer above one monolayer;exhibit lambda = 0.8 similar to 1.0, similar to the value of bulk indium;0.9. This is discussed in the light of a recent structure model with a;double indium layer and the relatively high superconducting transition;temperature of this surface. On the other hand, the lambda's of two 1D;surface states of the 4 x 1-In surface with one monolayer of indium are;much higher than that of root 7 x root 3-In, reaching 1.8, which is the;largest ever reported for a surface state. The origin of the enhanced;electron-phonon coupling and its relationship to the charge-density-wave;phase transition of this surface are discussed. DOI:;10.1103/PhysRevB.86.245408;1;0;0;0;1;1098-0121;WOS:000312065400008;;;J;Vekilova, O. Yu.;Simak, S. I.;Ponomareva, A. V.;Abrikosov, I. A.;Influence of Ni on the lattice stability of Fe-Ni alloys at multimegabar;pressures;PHYSICAL REVIEW B;86;22;224107;10.1103/PhysRevB.86.224107;DEC 10 2012;2012;The lattice stability trends of the primary candidate for Earth's core;material, the Fe-Ni alloy, were examined from first principles. We;employed the exact muffin-tin orbital method (EMTO) combined with the;coherent potential approximation (CPA) for the treatment of alloying;effects. It was revealed that high pressure reverses the trend in the;relative stabilities of the body-centered cubic (bcc), face-centered;cubic (fcc), and hexagonal close-packed (hcp) phases observed at ambient;conditions. In the low pressure region the increase of Ni concentration;in the Fe-Ni alloy enhances the bcc phase destabilization relative to;the more close-packed fcc and hcp phases. However, at 300 GPa (Earth's;core pressure), the effect of Ni addition is opposite. The reverse of;the trend is associated with the suppression of the ferromagnetism of Fe;when going from ambient pressures to pressure conditions corresponding;to those of Earth's core. The first-principles results are explained in;the framework of the canonical band model.;0;0;0;0;0;1098-0121;WOS:000312064300001;;;J;Wang, Kang;Light wave states in quasiperiodic metallic structures;PHYSICAL REVIEW B;86;23;235110;10.1103/PhysRevB.86.235110;DEC 10 2012;2012;We investigate the light wave states in the octagonal and decagonal;quasiperiodic metallic structures by considering their respective;approximants at different orders. The mechanisms underlying the light;wave behaviors are studied in relation to various structure parameters;and configurations. We show that the formation of the first passbands,;that delimit the photonic band gaps and determine the plasma gaps,;involves only the lowest frequency resonance modes inside the fat tiles,;and that light localization occurs due to resonances in high symmetry;local centers as well as in the fragments of such centers, formed by the;skinny tiles. The structure filling rate affects the localized state;frequencies relative to the first passbands, as well as the plasma;frequency levels, by modulating the frequency levels of the resonance;modes and the widths of the passbands. The results of this study can be;generalized to other metallic quasiperiodic and related structures.;1;0;0;0;1;1098-0121;WOS:000312064700001;;;J;Singh, Shashi B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M. H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.;Correlation between p-type conductivity and electronic structure of;Cr-deficient CuCr1-xO2 (x = 0-0.1);PHYSICAL REVIEW B;86;24;241103;10.1103/PhysRevB.86.241103;DEC 7 2012;2012;The correlation between the p-type hole conduction and the electronic;structures of Cr-deficient CuCr1-xO2 (x = 0-0.1) compounds was;investigated using O K-, Cu, and Cr L-3,L-2-edge x-ray absorption;near-edge structure (XANES), scanning photoelectron microscopy, and;x-ray emission spectroscopy measurements. XANES spectra reveal a gradual;increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr;deficiency x, whereas, the valence of Cr remains constant as Cr3+. These;results indicate that the p-type conductivity in the CuCr1-xO2 samples;is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct;Cu1+-O-Cu2+ holemechanism. Remarkable Cr-deficiency-induced changes in;the densities of Cu 3d, Cu 3d-O 2p, andO2p states at or near the;valence-band maximum or the Fermi level were also observed. In addition,;a crossover of conductionmechanism from thermally activated (TA) hopping;to a combination of TA and Mott's three-dimensional variable range;hopping occurs around 250 K.;Yamane, Hiroyuki/K-5297-2013;0;0;0;0;0;1098-0121;WOS:000312025700004;;;J;Bossy, Jacques;Ollivier, Jacques;Schober, Helmut;Glyde, H. R.;Excitations of amorphous solid helium;PHYSICAL REVIEW B;86;22;224503;10.1103/PhysRevB.86.224503;DEC 7 2012;2012;We present neutron scattering measurements of the dynamic structure;factor S(Q,omega) of amorphous solid helium confined in 47-angstrom pore;diameter MCM-41 at pressure 48.6 bars. At low temperature T = 0.05 K, we;observe S(Q,omega) of the confined quantum amorphous solid plus the bulk;polycrystalline solid between the MCM-41 powder grains. No liquidlike;phonon-roton modes, other sharply defined modes at low energy (omega <;1.0 meV), or modes unique to a quantum amorphous solid that might;suggest superflow are observed. Rather, the S(Q, omega) of confined;amorphous and bulk polycrystalline solid appear to be very similar. At;higher temperature (T > 1 K), the amorphous solid in the MCM-41 pores;melts to a liquid which has a broad S(Q,omega) peaked near omega similar;or equal to 0, characteristic of normal liquid He-4 under pressure.;Expressions for the S(Q,omega) of amorphous and polycrystalline solid;helium are presented and compared. In previous measurements of liquid;He-4 confined in MCM-41 at lower pressure, the intensity in the liquid;roton mode decreases with increasing pressure until the roton vanishes;at the solidification pressure (38 bars), consistent with no roton in;the solid observed here.;2;0;0;0;2;1098-0121;WOS:000321857700002;;;J;Joly, Yves;Collins, S. P.;Grenier, Stephane;Tolentino, Helio C. N.;De Santis, Maurizio;Birefringence and polarization rotation in resonant x-ray diffraction;PHYSICAL REVIEW B;86;22;220101;10.1103/PhysRevB.86.220101;DEC 7 2012;2012;Birefringence can contribute to x-ray resonant Bragg diffraction and;likely explains recent novel data collected on CuO. We prove these;statements using ab initio simulations which reproduce the experimental;polarization effects quantitatively. We show that an unrotated;polarization signal-ruled out in resonant magnetic scattering within the;electric dipole approximation-arises from the dynamic change in;polarization inside the material. We are able to reproduce all the;related behavior with circular polarization and its dependence on the;angle of rotation about the Bragg wave vector. We provide a tool to;disentangle the various physical origins of the polarization rotation,;providing a more complete understanding of the illuminated material.;TOLENTINO, HELIO/J-1894-2014; Grenier, Stephane/N-1986-2014;TOLENTINO, HELIO/0000-0003-4032-5988; Grenier,;Stephane/0000-0001-8370-7375;12;1;0;0;12;1098-0121;WOS:000321857700001;;;J;Kovacs, Istvan A.;Igloi, Ferenc;Cardy, John;Corner contribution to percolation cluster numbers;PHYSICAL REVIEW B;86;21;214203;10.1103/PhysRevB.86.214203;DEC 7 2012;2012;We study the number of clusters in two-dimensional (2d) critical;percolation, N-Gamma, which intersect a given subset of bonds, Gamma. In;the simplest case, when Gamma is a simple closed curve, N-Gamma is;related to the entanglement entropy of the critical diluted quantum;Ising model, in which Gamma represents the boundary between the;subsystem and the environment. Due to corners in Gamma there are;universal logarithmic corrections to N-Gamma, which are calculated in;the continuum limit through conformal in-variance, making use of the;Cardy-Peschel formula. The exact formulas are confirmed by large scale;Monte Carlo simulations. These results are extended to anisotropic;percolation where they confirm a result of discrete holomorphicity.;Kovacs, Istvan/A-8447-2013;5;0;0;0;5;1098-0121;WOS:000312023100003;;;J;Komsa, Hannu-Pekka;Krasheninnikov, Arkady V.;Effects of confinement and environment on the electronic structure and;exciton binding energy of MoS2 from first principles;PHYSICAL REVIEW B;86;24;241201;10.1103/PhysRevB.86.241201;DEC 7 2012;2012;Using GW first-principles calculations for few-layer and bulk MoS2, we;study the effects of quantum confinement on the electronic structure of;this layered material. By solving the Bethe-Salpeter equation, we also;evaluate the exciton energy in these systems. Our results are in;excellent agreement with the available experimental data. Exciton;binding energy is found to dramatically increase from 0.1 eV in the bulk;to 1.1 eV in the monolayer. The fundamental band gap increases as well,;so that the optical transition energies remain nearly constant. We also;demonstrate that environments with different dielectric constants have a;profound effect on the electronic structure of the monolayer. Our;results can be used for engineering the electronic properties of MoS2;and other transition-metal dichalcogenides and may explain the;experimentally observed variations in the mobility of monolayer MoS2.;Krasheninnikov, Arkady/M-3020-2013;Krasheninnikov, Arkady/0000-0003-0074-7588;50;4;0;0;50;1098-0121;WOS:000312025700003;;;J;Ciuchi, S.;Fratini, S.;Electronic transport and quantum localization effects in organic;semiconductors;PHYSICAL REVIEW B;86;24;245201;10.1103/PhysRevB.86.245201;DEC 7 2012;2012;We explore the charge transport mechanism in organic semiconductors;based on a model that accounts for the thermal intermolecular disorder;at work in pure crystalline compounds, as well as extrinsic sources of;disorder that are present in current experimental devices. Starting from;the Kubo formula, we describe a theoretical framework that relates the;time-dependent quantum dynamics of electrons to the frequency-dependent;conductivity. The electron mobility is then calculated through a;relaxation time approximation that accounts for quantum localization;corrections beyond Boltzmann theory, and allows us to efficiently;address the interplay between highly conducting states in the band range;and localized states induced by disorder in the band tails. The;emergence of a "transient localization" phenomenon is shown to be a;general feature of organic semiconductors that is compatible with the;bandlike temperature dependence of the mobility observed in pure;compounds. Carrier trapping by extrinsic disorder causes a crossover to;a thermally activated behavior at low temperature, which is;progressively suppressed upon increasing the carrier concentration, as;is commonly observed in organic field-effect transistors. Our results;establish a direct connection between the localization of the electronic;states and their conductive properties, formalizing phenomenological;considerations that are commonly used in the literature.;Fratini, Simone/A-4692-2009;Fratini, Simone/0000-0002-4750-3241;4;0;0;0;4;1098-0121;WOS:000312025700001;;;J;Huang, Bing;Lee, Hoonkyung;Defect and impurity properties of hexagonal boron nitride: A;first-principles calculation;PHYSICAL REVIEW B;86;24;245406;10.1103/PhysRevB.86.245406;DEC 7 2012;2012;In this paper, we have systematically studied the structural and;electronic properties of vacancy defects and carbon impurity in;hexagonal boron nitride (h-BN) by using both normal GGA calculations and;advanced hybrid functional calculations. Our calculations show that the;defect configurations and the local bond lengths around defects are;sensitive to their charge states. The highest negative defect charge;states are largely determined by the nearly-free-electron state at the;conduction band minimum of BN. Generally, the in-gap defect levels;obtained from hybrid functional calculations are much deeper than those;obtained from normal GGA calculations. The formation energies of neutral;defects calculated by hybrid functional and GGA are close to each other,;but the defect transition energy levels are quite different between GGA;and hybrid functional calculations. Finally, we show that the charged;defect configurations as well as the transition energy levels exhibit;interesting layer effects.;Huang, Bing/D-8941-2011;Huang, Bing/0000-0001-6735-4637;8;0;0;0;8;1098-0121;WOS:000312025700002;;;J;Maassen, T.;Vera-Marun, I. J.;Guimaraes, M. H. D.;van Wees, B. J.;Contact-induced spin relaxation in Hanle spin precession measurements;PHYSICAL REVIEW B;86;23;235408;10.1103/PhysRevB.86.235408;DEC 7 2012;2012;In the field of spintronics the "conductivity mismatch" problem remains;an important issue. Here the difference between the resistance of;ferromagnetic electrodes and a (high resistive) transport channel causes;injected spins to be backscattered into the leads and to lose their spin;information. We study the effect of the resulting contact-induced spin;relaxation on spin transport, in particular on nonlocal Hanle precession;measurements. As the Hanle line shape is modified by the contact-induced;effects, the fits to Hanle curves can result in incorrectly determined;spin transport properties of the transport channel. We quantify this;effect that mimics a decrease of the spin relaxation time of the channel;reaching more than four orders of magnitude and a minor increase of the;diffusion coefficient by less than a factor of two. Then we compare the;results to spin transport measurements on graphene from the literature.;We further point out guidelines for a Hanle precession fitting procedure;that allows the reliable extraction of spin transport properties from;measurements.;Vera-Marun, Ivan/A-4704-2013; Guimaraes, Marcos/K-1940-2013;Vera-Marun, Ivan/0000-0002-6347-580X;;14;1;0;0;14;1098-0121;WOS:000312024900002;;;J;Murch, K. W.;Ginossar, E.;Weber, S. J.;Vijay, R.;Girvin, S. M.;Siddiqi, I.;Quantum state sensitivity of an autoresonant superconducting circuit;PHYSICAL REVIEW B;86;22;220503;10.1103/PhysRevB.86.220503;DEC 7 2012;2012;When a frequency chirped excitation is applied to a classical high-Q;nonlinear oscillator, its motion becomes dynamically synchronized to the;drive and large oscillation amplitude is observed, provided the drive;strength exceeds the critical threshold for autoresonance. We;demonstrate that when such an oscillator is strongly coupled to a;quantized superconducting qubit, both the effective nonlinearity and the;threshold become a nontrivial function of the qubit-oscillator detuning.;Moreover, the autoresonant threshold is dependent on the quantum state;of the qubit and may be used to realize a high-fidelity, latching;readout whose speed is not limited by the oscillator Q.;1;0;0;0;1;1098-0121;WOS:000312024300001;;;J;Ondrejkovic, P.;Kempa, M.;Vysochanskii, Y.;Saint-Gregoire, P.;Bourges, P.;Rushchanskii, K. Z.;Hlinka, J.;Neutron scattering study of ferroelectric Sn2P2S6 under pressure;PHYSICAL REVIEW B;86;22;224106;10.1103/PhysRevB.86.224106;DEC 7 2012;2012;Ferroelectric phase transition in the semiconductor Sn2P2S6 single;crystal has been studied by means of neutron scattering in the;pressure-temperature range adjacent to the anticipated tricritical;Lifshitz point (p approximate to 0.18 GPa, T approximate to 296 K). The;observations reveal a direct ferroelectric-paraelectric phase transition;in the whole investigated pressure range (0.18-0.6 GPa). These results;are in a clear disagreement with phase diagrams assumed in numerous;earlier works, according to which a hypothetical intermediate;incommensurate phase extends over several or even tens of degrees in the;0.5 GPa pressure range. Temperature dependence of the anisotropic;quasielastic diffuse scattering suggests that polarization fluctuations;present above T-C are strongly reduced in the ordered phase. Still, the;temperature dependence of the ((2) over bar 00) Bragg reflection;intensity at p = 0.18 GPa can be remarkably well modeled assuming the;order-parameter amplitude growth according to the power law with;logarithmic corrections predicted for a uniaxial ferroelectric;transition at the tricritical Lifshitz point.;Hlinka, Jiri/G-5985-2014; Ondrejkovic, Petr/G-6654-2014; Kempa, Martin/G-8830-2014;1;0;0;0;1;1098-0121;WOS:000312024300002;;;J;Svindrych, Z.;Janu, Z.;Kozlowski, A.;Honig, J. M.;Low-temperature magnetic anomaly in magnetite;PHYSICAL REVIEW B;86;21;214406;10.1103/PhysRevB.86.214406;DEC 7 2012;2012;We have studied experimentally the responses of high-quality single;crystals of stoichiometric synthetic magnetite to applied weak dc and ac;magnetic fields in the range of 6-60 K, far below the Verwey transition.;The results can be compared to so-called magnetic after effects (MAE);measurements, which are the most extensive magnetic measurements of;magnetite at these temperatures. We present a novel point of view on the;relaxation phenomena encountered at these temperatures-the;low-temperature anomaly, addressing the striking difference between the;results of conventional ac susceptibility measurements and those;accompanying MAE measurements, i.e., periodic excitations with strong;magnetic pulses. We also draw a connection between this anomaly and the;so-called glasslike transition, and discuss possible mechanisms;responsible for these effects.;janu, zdenek/G-9113-2014;0;0;0;0;0;1098-0121;WOS:000312023100001;;;J;Tarantini, C.;Lee, S.;Kametani, F.;Jiang, J.;Weiss, J. D.;Jaroszynski, J.;Folkman, C. M.;Hellstrom, E. E.;Eom, C. B.;Larbalestier, D. C.;Artificial and self-assembled vortex-pinning centers in superconducting;Ba(Fe1-xCox)(2)As-2 thin films as a route to obtaining very high;critical-current densities;PHYSICAL REVIEW B;86;21;214504;10.1103/PhysRevB.86.214504;DEC 7 2012;2012;We report on the superior vortex pinning of single-and multilayer;Ba(Fe1-xCox)(2)As-2 thin films with self-assembled c-axis and;artificially introduced ab-plane pins. Ba(Fe1-xCox)(2)As-2 can accept a;very high density of pins (15-20 vol %) without T-c suppression. The;matching field is greater than 12 T, producing a significant enhancement;of the critical current density J(c), an almost isotropic J(c) (theta,;20 T) > 10(5) A/cm(2), and global pinning force density F-p of similar;to 50 GN/m(3). This scenario strongly differs from the high-temperature;superconducting cuprates where the addition of pins without Tc;suppression is limited to 2-4 vol %, leading to small H-Irr enhancements;and improved J(c) only below 3-5 T.;Lee, Sanghan/C-8876-2012; Eom, Chang-Beom/I-5567-2014;7;2;0;0;7;1098-0121;WOS:000312023100002;;;J;Xia, Junchao;Carter, Emily A.;Density-decomposed orbital-free density functional theory for covalently;bonded molecules and materials;PHYSICAL REVIEW B;86;23;235109;10.1103/PhysRevB.86.235109;DEC 7 2012;2012;We propose a density decomposition scheme using a Wang-Govind-Carter-;(WGC-) based kinetic energy density functional (KEDF) to accurately and;efficiently simulate various covalently bonded molecules and materials;within orbital-free (OF) density functional theory (DFT). By using a;local, density-dependent scale function, the total density is decomposed;into a highly localized density within covalent bond regions and a;flattened delocalized density, with the former described by semilocal;KEDFs and the latter treated by the WGC KEDF. The new model predicts;reasonable equilibrium volumes, bulk moduli, and phase-ordering energies;for various semiconductors compared to Kohn-Sham (KS) DFT benchmarks.;The decomposition formalism greatly improves numerical stability and;accuracy, while retaining computational speed compared to simply;applying the original WGC KEDF to covalent materials. The surface energy;of Si(100) and various diatomic molecule properties can be stably;calculated and also agree well with KSDFT benchmarks. This;linear-scaled, computationally efficient, density-partitioned,;multi-KEDF scheme opens the door to large-scale simulations of;molecules, semiconductors, and insulators with OFDFT.;7;0;0;0;7;1098-0121;WOS:000312024900001;;;J;Zhao, Yang;Gong, Shou-Shu;Wang, Yong-Jun;Su, Gang;Low-energy effective theory and two distinct critical phases in a;spin-1/2 frustrated three-leg spin tube;PHYSICAL REVIEW B;86;22;224406;10.1103/PhysRevB.86.224406;DEC 7 2012;2012;Motivated by the crystal structures of [(CuCl(2)tachH)(3)Cl]Cl-2 and;Ca3Co2O6, we develop a low-energy effective theory using the;bosonization technique for a spin-1/2 frustrated three-leg spin tube;with trigonal prism units in two limit cases. The features obtained with;the effective theory are numerically elucidated by the density matrix;renormalization group method. Three different quantum phases in the;ground state of the system, say, one gapped dimerized phase and two;distinct gapless phases, are identified, where the two gapless phases;are found to have the conformal central charge c = 1 and 3/2,;respectively. Spin gaps, spin and dimer correlation functions, and the;entanglement entropy are obtained. In particular, it is disclosed that;the critical phase with c = 3/2 is the consequence of spin frustrations,;which might belong to the SU(2)(k=2) Wess-Zumino-Witten-Novikov;universality class, and is induced by the twist term in the bosonized;Hamiltonian density.;Su, Gang/G-6092-2011;Su, Gang/0000-0002-8149-4342;1;1;0;0;1;1098-0121;WOS:000312024300003;;;J;Vucicevic, J.;Goerbig, M. O.;Milovanovic, M. V.;d-wave superconductivity on the honeycomb bilayer;PHYSICAL REVIEW B;86;21;214505;10.1103/PhysRevB.86.214505;DEC 7 2012;2012;We introduce a microscopic model on the honeycomb bilayer, which in the;small-momentum limit captures the usual (quadratic dispersion in the;kinetic term) description of bilayer graphene. In the limit of strong;interlayer hopping it reduces to an effective honeycomb monolayer model;with also third-neighbor hopping. We study interaction effects in this;effective model, focusing on possible superconducting instabilities. We;find d(x2-y2) superconductivity in the strong-coupling limit of an;effective tJ -model-like description that gradually transforms into d +;id time-reversal symmetry-breaking superconductivity at weak couplings.;In this limit the small-momentum order-parameter expansion is (k(x) +;ik(y) )(2) [or (k(x) + ik(y) )(2)] in both valleys of the effective;low-energy description. The relevance of our model and investigation for;the physics of bilayer graphene is also discussed.;5;0;0;0;5;1098-0121;WOS:000312023100004;;;J;Etzioni, Yoav;Horovitz, Baruch;Le Doussal, Pierre;Rings and Coulomb boxes in dissipative environments;PHYSICAL REVIEW B;86;23;235406;10.1103/PhysRevB.86.235406;DEC 6 2012;2012;We study a particle on a ring in the presence of a dissipative;Caldeira-Leggett environment and derive its response to a dc field. We;show how this non-equilibrium response is related to a flux averaged;equilibrium response. We find, through a two-loop renormalization group;analysis, that a large dissipation parameter eta flows to a fixed point;eta(R) = (h) over bar/(2 pi). We also reexamine the mapping of this;problem to that of the Coulomb box and show that the relaxation;resistance, of recent interest, is quantized for large eta. For finite;eta > eta(R) we find that a certain average of the relaxation resistance;is quantized. We propose a Coulomb-box experiment to measure a quantized;noise. DOI: 10.1103/PhysRevB.86.235406;1;0;0;0;1;1098-0121;WOS:000312024600004;;;J;Fontana, Yannik;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;Mapping the directional emission of quasi-two-dimensional photonic;crystals of semiconductor nanowires using Fourier microscopy;PHYSICAL REVIEW B;86;24;245303;10.1103/PhysRevB.86.245303;DEC 6 2012;2012;Controlling the dispersion and directionality of the emission of;nanosources is one of the major goals of nanophotonics research. This;control will allow the development of highly efficient nanosources even;at the single-photon level. One of the ways to achieve this goal is to;couple the emission to Bloch modes of periodic structures. Here, we;present the first measurements of the directional emission from nanowire;photonic crystals by using Fourier microscopy. With this technique, we;efficiently collect and resolve the directional emission of nanowires;within the numerical aperture of a microscope objective. The light;emission from a heterostructure grown in each nanowire is governed by;the photonic (Bloch) modes of the photonic crystal. We also demonstrate;that the directionality of the emission can be easily controlled by;infiltrating the photonic crystal with a high refractive index liquid.;This work opens new possibilities for the control of the emission of;sources in nanowires.;5;0;0;0;5;1098-0121;WOS:000312025300005;;;J;Fujimori, Shin-ichi;Ohkochi, Takuo;Okane, Tetsuo;Saitoh, Yuji;Fujimori, Atsushi;Yamagami, Hiroshi;Haga, Yoshinori;Yamamoto, Etsuji;Onuki, Yoshichika;Itinerant nature of U 5f states in uranium mononitride revealed by;angle-resolved photoelectron spectroscopy;PHYSICAL REVIEW B;86;23;235108;10.1103/PhysRevB.86.235108;DEC 6 2012;2012;The electronic structure of the antiferromagnet uranium nitride (UN) has;been studied by angle-resolved photoelectron spectroscopy (ARPES) using;soft x-rays (h nu = 420-520 eV). Strongly dispersive bands with large;contributions from the U 5f states were observed in ARPES spectra and;form Fermi surfaces. The band structure as well as the Fermi surfaces in;the paramagnetic phase are well explained by the band-structure;calculation treating all the U 5f electrons as being itinerant,;suggesting that an itinerant description of the U 5f states is;appropriate for this compound. On the other hand, changes in the;spectral function due to the antiferromagnetic transition were very;small. The shapes of the Fermi surfaces in a paramagnetic phase are;highly three-dimensional, and the nesting of Fermi surfaces is unlikely;as the origin of the magnetic ordering. DOI: 10.1103/PhysRevB.86.235108;2;0;0;0;2;1098-0121;WOS:000312024600002;;;J;Hosseini, Mir Vahid;Zareyan, Malek;Unconventional superconducting states of interlayer pairing in bilayer;and trilayer graphene;PHYSICAL REVIEW B;86;21;214503;10.1103/PhysRevB.86.214503;DEC 6 2012;2012;We develop a theory for interlayer pairing of chiral electrons in;graphene materials which results in an unconventional superconducting;state with an s-wave spin-triplet order parameter. In a pure bilayer;graphene, this superconductivity exhibits a gapless property with an;exotic effect of temperature-induced condensation causing an increase of;the pairing amplitude with increasing temperature. We find that a finite;doping opens a gap in the excitation spectrum and weakens this anomalous;temperature dependence. We further explore the possibility of realizing;a variety of pairing patterns with different topologies of the Fermi;surface, by tuning the difference in the doping of the two layers. In;trilayer graphene, the interlayer superconductivity is characterized by;a two-component order parameter which can be used to define two distinct;phases in which only one of the components is nonvanishing. For ABA;stacking the stable state is determined by a competition between these;two phases. On variation of the relative amplitude of the corresponding;coupling strength, a first-order phase transition can occur between;these two phases. For ABC stacking, we find that the two phases coexist;with the possibility of a similar phase transition, which turns out to;be second order. DOI: 10.1103/PhysRevB.86.214503;1;0;0;0;1;1098-0121;WOS:000312022700003;;;J;Kajihara, Y.;Inui, M.;Matsuda, K.;Nagao, T.;Ohara, K.;Density fluctuations at the continuous liquid-liquid phase transition in;chalcogen systems;PHYSICAL REVIEW B;86;21;214202;10.1103/PhysRevB.86.214202;DEC 6 2012;2012;We have carried out density and small-angle x-ray scattering;measurements on a typical liquid chalcogen (Te, Se) system to;investigate its continuous liquid-liquid phase transition. With;increasing temperature, the zero-wave-number structure factor S(0) shows;a maximum in the middle of the transition region where the density;exhibits negative thermal expansion. This is direct evidence of density;fluctuations induced by the liquid-liquid phase transition. When the;sample is pressurized to 100 MPa, the density and S(0) curves shift to;the lower temperature side, which is consistent with the shift of the;structural transition. We discuss the similarity between liquid Te and;liquid water from the viewpoint of fluctuations induced by the;liquid-liquid transition. DOI: 10.1103/PhysRevB.86.214202;1;0;0;0;1;1098-0121;WOS:000312022700001;;;J;Khuntia, P.;Strydom, A. M.;Wu, L. S.;Aronson, M. C.;Steglich, F.;Baenitz, M.;Field-tuned critical fluctuations in YFe2Al10: Evidence from;magnetization, Al-27 NMR, and NQR investigations;PHYSICAL REVIEW B;86;22;220401;10.1103/PhysRevB.86.220401;DEC 6 2012;2012;We report magnetization, specific heat, and NMR investigations on;YFe2Al10 over a wide range of temperature and magnetic field and zero;field (NQR) measurements. Magnetic susceptibility, specific heat, and;spin-lattice relaxation rate divided by T (1/T1T) follow a weak power;law (similar to T-0.4) temperature dependence, which is a signature of;the critical fluctuations of Fe moments. The value of the;Sommerfeld-Wilson ratio and the linear relation between 1/T1T and.;suggest the existence of ferromagnetic correlations in this system. No;magnetic ordering down to 50 mK in C-p(T)/T and the unusual T and H;scaling of the bulk and NMR data are associated with a magnetic;instability which drives the system to quantum criticality. The magnetic;properties of the system are tuned by field wherein ferromagnetic;fluctuations are suppressed and a crossover from quantum critical to;Fermi-liquid behavior is observed with increasing magnetic field.;Khuntia, Panchanan /E-4270-2010;5;1;0;0;5;1098-0121;WOS:000312023600001;;;J;Marsh, J.;Camley, R. E.;Two-wave mixing in nonlinear magnetization dynamics: A perturbation;expansion of the Landau-Lifshitz-Gilbert equation;PHYSICAL REVIEW B;86;22;224405;10.1103/PhysRevB.86.224405;DEC 6 2012;2012;Recent experiments have shown that two electromagnetic waves can be;mixed together by a nonlinear process in magnetic materials and can;produce a wide variety of output waves, each with a different frequency.;A perturbation expansion of the Landau-Lifschitz-Gilbert equation is;presented which provides qualitative and quantitative understanding of;this process. The results of this expansion are compared to both;experiment and direct numerical solutions.;1;0;0;0;1;1098-0121;WOS:000312023600004;;;J;Norris, Scott A.;Stress-induced patterns in ion-irradiated silicon: Model based on;anisotropic plastic flow;PHYSICAL REVIEW B;86;23;235405;10.1103/PhysRevB.86.235405;DEC 6 2012;2012;We present a model for the effect of stress on thin amorphous films that;develop atop ion-irradiated silicon, based on the mechanism of;ion-induced anisotropic plastic flow. Using only parameters directly;measured or known to high accuracy, the model exhibits remarkably good;agreement with the wavelengths of experimentally observed patterns and;agrees qualitatively with limited data on ripple propagation speed. The;predictions of the model are discussed in the context of other;mechanisms recently theorized to explain the wavelengths, including;extensive comparison with an alternate model of stress. DOI:;10.1103/PhysRevB.86.235405;14;0;0;0;14;1098-0121;WOS:000312024600003;;;J;Ostlin, A.;Chioncel, L.;Vitos, L.;One-particle spectral function and analytic continuation for many-body;implementation in the exact muffin-tin orbitals method;PHYSICAL REVIEW B;86;23;235107;10.1103/PhysRevB.86.235107;DEC 6 2012;2012;We investigate one of the most common analytic continuation techniques;in condensed matter physics, namely the Pade approximant. Aspects;concerning its implementation in the exact muffin-tin orbitals (EMTO);method are scrutinized with special regard towards making it stable and;free of artificial defects. The electronic structure calculations are;performed for solid hydrogen, and the performance of the analytical;continuation is assessed by monitoring the density of states constructed;directly and via the Pade approximation. We discuss the difference;between the k-integrated and k-resolved analytical continuations, as;well as describing the use of random numbers and pole residues to;analyze the approximant. It is found that the analytic properties of the;approximant can be controlled by appropriate modifications, making it a;robust and reliable tool for electronic structure calculations. At the;end, we propose a route to perform analytical continuation for the;EMTO+dynamical mean field theory method. DOI: 10.1103/PhysRevB.86.235107;0;0;0;0;0;1098-0121;WOS:000312024600001;;;J;Rauch, D.;Suellow, S.;Bleckmann, M.;Klemke, B.;Kiefer, K.;Kim, M. S.;Aronson, M. C.;Bauer, E.;Magnetic phase diagram of CePt3B1-xSix;PHYSICAL REVIEW B;86;24;245104;10.1103/PhysRevB.86.245104;DEC 6 2012;2012;We present a study of the main bulk properties (susceptibility,;magnetization, resistivity, and specific heat) of CePt3B1-xSix, an;alloying system that crystallizes in a noncentrosymmetric lattice, and;derive the magnetic phase diagram. The materials at the end point of the;alloying series have previously been studied, with CePt3B established as;a material with two different magnetic phases at low temperatures;(antiferromagnetic below T-N = 7.8 K, weakly ferromagnetic below T-C;approximate to 5 K), while CePt3Si is a heavy fermion superconductor;(T-c = 0.75 K) coexisting with antiferromagnetism (T-N = 2.2 K). From;our experiments we conclude that the magnetic phase diagram is divided;into two regions. In the region of low Si content (up to x similar to;0.7) the material properties resemble those of CePt3B. Upon increasing;the Si concentration further the magnetic ground state continuously;transforms into that of CePt3Si. In essence, we argue that CePt3B can be;understood as a low pressure variant of CePt3Si.;Kiefer, Klaus/J-3544-2013; Klemke, Bastian/J-4746-2013;Kiefer, Klaus/0000-0002-5178-0495; Klemke, Bastian/0000-0003-4560-6025;0;0;0;0;0;1098-0121;WOS:000312025300004;;;J;Schoenecker, Stephan;Richter, Manuel;Koepernik, Klaus;Eschrig, Helmut;Ferromagnetic elements by epitaxial growth: A density functional;prediction (vol 85, 024407, 2012);PHYSICAL REVIEW B;86;21;219901;10.1103/PhysRevB.86.219901;DEC 6 2012;2012;0;0;0;0;0;1098-0121;WOS:000312022700004;;;J;Sedlmeier, Katrin;Elsaesser, Sebastian;Neubauer, David;Beyer, Rebecca;Wu, Dan;Ivek, Tomislav;Tomic, Silvia;Schlueter, John A.;Dressel, Martin;Absence of charge order in the dimerized kappa-phase BEDT-TTF salts;PHYSICAL REVIEW B;86;24;245103;10.1103/PhysRevB.86.245103;DEC 6 2012;2012;Utilizing infrared vibrational spectroscopy we have investigated;dimerized two-dimensional organic salts in order to search for possible;charge redistribution that might constitute electronic dipoles and;ferroelectricity: the quantum spin liquid kappa-(BEDT-TTF)(2)Cu-2(CN)(3);[BEDT-TTF: bis-(ethylenedithio)tetrathiafulvalene], the;antiferromagnetic Mott insulator kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl, and;the superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br. None of them;exhibit any indication of charge disproportionation. Upon cooling to low;temperatures all BEDT-TTF molecules remain homogeneously charged within;+/- 0.005e. No modification in the charge distribution is observed;around T = 6 K where a low-temperature anomaly has been reported for the;spin-liquid material kappa-(BEDT-TTF)(2)Cu-2(CN)(3). In this compound;the in-plane optical response and vibrational coupling are rather;anisotropic, indicating that the tilt of the BEDT-TTF molecules in c;direction and their coupling to the anion layers has to be considered in;the explanation of the electromagnetic properties.;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;14;0;0;0;14;1098-0121;WOS:000312025300003;;;J;Siloi, I.;Troiani, F.;Towards the chemical tuning of entanglement in molecular nanomagnets;PHYSICAL REVIEW B;86;22;224404;10.1103/PhysRevB.86.224404;DEC 6 2012;2012;Antiferromagnetic spin rings represent prototypical realizations of;highly correlated, low-dimensional systems. Here we theoretically show;how the introduction of magnetic defects by controlled chemical;substitutions results in a strong spatial modulation of spin-pair;entanglement within each ring. Entanglement between local degrees of;freedom (individual spins) and collective ones (total ring spins) are;shown to coexist in exchange-coupled ring dimers, as can be deduced from;general symmetry arguments. We verify the persistence of these features;at finite temperatures, and discuss them in terms of experimentally;accessible observables.;Troiani, Filippo/B-4787-2011;5;0;0;0;5;1098-0121;WOS:000312023600003;;;J;Sreenivasulu, G.;Petrov, V. M.;Fetisov, L. Y.;Fetisov, Y. K.;Srinivasan, G.;Magnetoelectric interactions in layered composites of piezoelectric;quartz and magnetostrictive alloys;PHYSICAL REVIEW B;86;21;214405;10.1103/PhysRevB.86.214405;DEC 6 2012;2012;Mechanical strain mediated magnetoelectric effects are studied in;bilayers and trilayers of piezoelectric quartz and magnetostrictive;permendur (P), an alloy of Fe-Co-V. It is shown that the magnetoelectric;voltage coefficient (MEVC), proportional to the ratio of the;piezoelectric coupling coefficient to the permittivity, is higher in;quartz-based composites than for traditional ferroelectrics-based ME;composites. In bilayers of X-cut single crystal quartz and permendur,;the MEVC varies from 1.5 V/cm Oe at 20 Hz to similar to 185 V/cm Oe at;bending resonance or electromechanical resonance corresponding to;longitudinal acoustic modes. In symmetric X-cut quartz-P trilayers, the;MEVC similar to 4.8 V/cm Oe at 20 Hz and similar to 175 V/cm Oe at;longitudinal acoustic resonance. Trilayers of Y-cut quartz and permendur;show ME coupling under a shear strain with an MEVC that is an order of;magnitude smaller than for longitudinal strain in samples with X-cut;quartz. A model for low-frequency and resonance ME effects which allows;for explicit expressions of MEVC and resonance frequencies is provided;and calculated. MEVCs are in general agreement with measured values.;Magnetoelectric composites with quartz have the desired characteristics;such as the absence of ferroelectric hysteresis and pyroelectric losses;and could potentially replace ferroelectrics in composite-based magnetic;sensors, transducers, and high-frequency devices. DOI:;10.1103/PhysRevB.86.214405;Gollapudi, Sreenivasulu/G-9832-2012;Gollapudi, Sreenivasulu/0000-0002-6136-7119;8;0;0;0;8;1098-0121;WOS:000312022700002;;;J;Syzranov, S. V.;Yevtushenko, O. M.;Efetov, K. B.;Fermionic and bosonic ac conductivities at strong disorder;PHYSICAL REVIEW B;86;24;241102;10.1103/PhysRevB.86.241102;DEC 6 2012;2012;We study the ac conduction in a system of fermions or bosons strongly;localized in a disordered array of sites with short-range interactions;at frequencies larger than the intersite tunneling but smaller than the;characteristic fluctuation of the on-site energy. While the main;contribution sigma(0)(omega) to the conductivity comes from local;dipole-type excitations on close pairs of sites, coherent processes on;three or more sites lead to an interference correction sigma(1)(omega),;which depends on the statistics of the charge carriers and can be;suppressed by a magnetic field. For bosons the correction is always;positive, while for fermions it can be positive or negative depending on;whether the conduction is dominated by effective single-particle or;single-hole processes. We calculate the conductivity explicitly assuming;a constant density of states of single-site excitations. Independently;of the statistics, sigma(0)(omega) = const. For bosons, sigma(1)(omega);proportional to log(C/omega). For fermions, sigma(1)(omega) proportional;to log[max(A,omega)/omega] - log[max(B,omega)/omega], where the first;and the second term are, respectively, the particle and hole;contributions, A and B being the particle and hole energy cutoffs. The;ac magnetoresistance has the same sign as sigma(1)(omega).;Efetov, Konstantin/H-8852-2013;0;0;0;0;0;1098-0121;WOS:000312025300001;;;J;Troeppner, C.;Schmitt, T.;Reuschl, M.;Hammer, L.;Schneider, M. A.;Mittendorfer, F.;Redinger, J.;Podloucky, R.;Weinert, M.;Incommensurate Moire overlayer with strong local binding: CoO(111);bilayer on Ir(100);PHYSICAL REVIEW B;86;23;235407;10.1103/PhysRevB.86.235407;DEC 6 2012;2012;Incommensurate relaxed overlayer Moire structures are often interpreted;as systems with weak lateral variations of the binding potential and;thus no structural modulations in the overlayer material. We discuss;here the example of a CoO(111) bilayer on Ir(100), which is a relaxed;overlayer with strong structural response to the lateral modulation of;interface properties but nevertheless is incommensurate. By means of;density functional theory (DFT) calculations, we quantitatively;reproduce all the structural parameters of the CoO(111) bilayer on;Ir(100) as proposed by a recent low-energy electron diffraction analysis;[Ebensperger et al., Phys. Rev. B 81, 235405 (2010)]. The calculations;predict energetic degeneracies with respect to registry shifts of the;CoO(111) film along [01 (1) over bar]. Large-scale, low-temperature;scanning tunneling microscopy topographies reveal that the true;structure of the film is incommensurate in this direction, exhibiting a;one-dimensional Moire pattern with a period of about 9.4 a(Ir). From DFT;calculations for limiting (periodic) models, we can sample the potential;landscape of the cobalt and oxygen atoms in the Moire structure across;the Ir(100) unit cell. We find that despite the non-commensurability of;the film, the binding to the substrate is site specific with strong;attraction and repulsion points for both cobalt and oxygen atoms,;leading to severe local distortions in the film. The lateral modulation;of the structural elements within the oxide film can be understood as a;combination of the lateral variation in the Co-Ir binding potential and;additional O-Ir binding. DOI: 10.1103/PhysRevB.86.235407;Schneider, M. Alexander/C-6241-2013; Hammer, Lutz/D-9863-2013; Schneider, M. Alexander/B-4444-2012; Mittendorfer, Florian/L-5929-2013;Schneider, M. Alexander/0000-0002-8607-3301;;3;0;0;0;3;1098-0121;WOS:000312024600005;;;J;Tyunina, M.;Dejneka, A.;Chvostova, D.;Levoska, J.;Plekh, M.;Jastrabik, L.;Phase transitions in ferroelectric Pb0.5Sr0.5TiO3 films probed by;spectroscopic ellipsometry;PHYSICAL REVIEW B;86;22;224105;10.1103/PhysRevB.86.224105;DEC 6 2012;2012;Phase transitions occurring in 130-nm-thick films of;perovskite-structure ferroelectric Pb0.5Sr0.5TiO3 are experimentally;studied by combining spectroscopic ellipsometry and low-frequency;dielectric analysis. Polycrystalline and polydomain epitaxial films with;relaxed misfit strain and columnar microstructure are investigated. The;paraelectric and the ferroelectric states, and the temperatures and;widths of the paraelectric-to-ferroelectric phase transitions, are;identified from the temperature evolution of refractive index measured;in transparency range. The temperatures at which transitions start on;cooling are found to be considerably higher than the temperatures of the;dielectric peaks. In contrast to the broad dielectric peaks, the;transition width of 60 K in the polycrystalline film and that of 20 K in;the polydomain epitaxial film are revealed. The discrepancies between;optical and dielectric data are explained by the influence of extrinsic;factors on the low-frequency response of the thin-film capacitors. It is;suggested that fundamental mechanisms of ferroelectric phase transitions;in thin films can be revealed by studies of thermo-optical properties.;Dejneka, Alexandr/G-6384-2014; Jastrabik, Lubomir /H-1217-2014; Chvostova, Dagmar/G-9360-2014;6;0;0;0;6;1098-0121;WOS:000312023600002;;;J;Zeng, Hualing;Zhu, Bairen;Liu, Kai;Fan, Jiahe;Cui, Xiaodong;Zhang, Q. M.;Low-frequency Raman modes and electronic excitations in atomically thin;MoS2 films;PHYSICAL REVIEW B;86;24;241301;10.1103/PhysRevB.86.241301;DEC 6 2012;2012;Atomically thin MoS2 crystals have been recognized as;quasi-two-dimensional semiconductors with remarkable physical;properties. We report our Raman scattering measurements on multilayer;and monolayer MoS2, especially in the low-frequency range (<50 cm(-1)).;We find two low-frequency Raman modes with a contrasting thickness;dependence. When increasing the number of MoS2 layers, one mode shows a;significant increase in frequency while the other decreases following a;1/N (N denotes the number of unit layers) trend. With the aid of;first-principles calculations we assign the former as the shear mode;E-2g(2). The latter is distinguished as the compression vibrational;mode, similar to the surface vibration of other epitaxial thin films.;The opposite evolution of the two modes with thickness demonstrates;vibrational modes in an atomically thin crystal as well as a more;precise way to characterize the thickness of atomically thin MoS2 films.;In addition, we observe a broad feature around 38 cm(-1) (5 meV) which;is visible only under near-resonance excitation and pinned at a fixed;energy, independent of thickness. We interpret the feature as an;electronic Raman scattering associated with the spin-orbit coupling;induced splitting in a conduction band at K points in their Brillouin;zone.;Liu, Kai/K-4157-2012; Cui, Xiaodong/C-2023-2009; Zeng, Hualing/J-4411-2014;Cui, Xiaodong/0000-0002-2013-8336;;19;1;0;0;19;1098-0121;WOS:000312025300002;;;J;Anand, V. K.;Johnston, D. C.;Observation of a phase transition at 55 K in single-crystal CaCu1.7As2;PHYSICAL REVIEW B;86;21;214501;10.1103/PhysRevB.86.214501;DEC 5 2012;2012;We present the structural, magnetic, thermal and ab-plane electronic;transport properties of single crystals of CaCu1.7As2 grown by the;self-flux technique that were investigated by powder x-ray diffraction,;magnetic susceptibility chi, isothermal magnetization M, specific heat;C-p, and electrical resistivity rho measurements as a function of;temperature T and magnetic field H. X-ray diffraction analysis of;crushed crystals at room temperature confirm the collapsed tetragonal;ThCr2Si2-type structure with similar to 15% vacancies on the Cu sites as;previously reported, corresponding to the composition CaCu1.7As2. The;chi(T) data are diamagnetic, anisotropic, and nearly independent of T.;The chi is larger in the ab plane than along the c axis, as also;observed previously for SrCu2As2 and for pure and doped BaFe2As2. The;C-p(T) and rho(T) data indicate metallic sp-band character. In contrast;to the rho(T) and C-p(T) data that do not show any evidence for phase;transitions below 300 K, the rho(T) data exhibit a sharp decrease on;cooling below a temperature T-t = 54-56 K, depending on the crystal. The;chi(T) data show no hysteresis on warming and cooling through T-t and;the transition thus appears to be second order. The phase transition may;arise from spatial ordering of the vacancies on the Cu sublattice. The;T-t is found to be independent of H for H <= 8 T. A positive;magnetoresistance is observed below T-t that increases with decreasing T;and attains a value in H = 8.0 T of 8.7% at T = 1.8 K.;Anand, Vivek Kumar/J-3381-2013;Anand, Vivek Kumar/0000-0003-2023-7040;5;0;0;0;5;1098-0121;WOS:000311910400003;;;J;Avetisyan, Siranush;Pietilaeinen, Pekka;Chakraborty, Tapash;Strong enhancement of Rashba spin-orbit coupling with increasing;anisotropy in the Fock-Darwin states of a quantum dot (vol 85, 153301,;2012);PHYSICAL REVIEW B;86;23;239901;10.1103/PhysRevB.86.239901;DEC 5 2012;2012;1;0;0;0;1;1098-0121;WOS:000311911500005;;;J;Berman, Oleg L.;Kezerashvili, Roman Ya.;Ziegler, Klaus;Superfluidity and collective properties of excitonic polaritons in;gapped graphene in a microcavity;PHYSICAL REVIEW B;86;23;235404;10.1103/PhysRevB.86.235404;DEC 5 2012;2012;We predict the formation and superfluidity of polaritons in an optical;microcavity formed by excitons in gapped graphene embedded there and;microcavity photons. The Rabi splitting related to the creation of an;exciton in a graphene layer in the presence of the band gap is obtained.;It is demonstrated that the Rabi splitting decreases when the energy gap;increases, while the larger value of the dielectric constant of the;microcavity gives a smaller value for the Rabi splitting. The analysis;of collective excitations as well as the sound velocity is presented. We;show that the superfluid density n(s) and temperature of the;Kosterlitz-Thouless phase transition T-c are decreasing functions of the;energy gap.;2;0;0;0;2;1098-0121;WOS:000311911500004;;;J;Bernu, S.;Fertey, P.;Itie, J. -P.;Berger, H.;Foury-Leylekian, P.;Pouget, J. -P.;Vanishing of the metal-insulator Peierls transition in pressurized BaVS3;PHYSICAL REVIEW B;86;23;235105;10.1103/PhysRevB.86.235105;DEC 5 2012;2012;BaVS3 presents a metal-to-insulator (MI) transition at ambient pressure;due to the stabilization of a 2k(F) commensurate charge density wave;(CDW) Peierls ground state built on the dz(2) V orbitals. The MI;transition vanishes under pressure at a quantum critical point (QCP);where the electronic properties exhibit a non-Fermi liquid behavior. In;this paper, we determine the CDW phase diagram under pressure and show;that it combines both the vanishing of the second-order Peierls;transition and a commensurate-incommensurate first-order delocking;transition of the 2k(F) wave vector. We explain quantitatively the drop;of the MI critical temperature by the decrease of the electron-hole pair;lifetime of the CDW condensate due to an enhancement of the;hybridization between the dz(2) and e(t(2g)) levels of the V under;pressure.;0;0;0;0;0;1098-0121;WOS:000311911500001;;;J;Bobaru, S.;Gaudry, E.;de Weerd, M. -C.;Ledieu, J.;Fournee, V.;Competing allotropes of Bi deposited on the Al13Co4(100) alloy surface;PHYSICAL REVIEW B;86;21;214201;10.1103/PhysRevB.86.214201;DEC 5 2012;2012;The growth and stability of Bi thin films on the Al13Co4(100) surface;has been investigated from the submonolayer to high-coverage regime by;scanning tunneling microscopy (STM) and low-energy electron diffraction;(LEED) for temperatures ranging from 57 to 633 K. Initially, Bi;adsorption leads to the formation of a pseudomorphic monolayer, followed;by the growth of islands of different heights with increasing coverage.;The in-plane structure, island height, and island morphology indicate;that these islands adopt either a pseudocubic (110) or hexagonal (111);orientation normal to the surface. The (110)-oriented islands correspond;to bilayer stacking (either two or four monolayers in height) while the;(111)-oriented islands correspond to either three-or four-layer;stacking. The in-plane orientation of (110) islands with respect to the;substrate is random, while (111) islands adopt one of four possible;orientations. In addition, the (111) islands show a moire structure. The;fact that Bi islands grow with either (110) or (111) orientation;simultaneously on the same substrate relates to a subtle energy balance;between both orientations according to ab initio calculations, allowing;both structures to coexist. The island density dependence versus both;deposition temperature and flux, their most frequent structure type,;reshaping effects, and chemical reactivity of the different allotropes;are also discussed in this paper.;Gaudry, Emilie/G-9682-2011; Ledieu, Julian/F-1430-2010;2;0;0;0;2;1098-0121;WOS:000311910400002;;;J;Czarnik, Piotr;Cincio, Lukasz;Dziarmaga, Jacek;Projected entangled pair states at finite temperature: Imaginary time;evolution with ancillas;PHYSICAL REVIEW B;86;24;245101;10.1103/PhysRevB.86.245101;DEC 5 2012;2012;A projected entangled pair state (PEPS) with ancillas is evolved in;imaginary time. This tensor network represents a thermal state of a;two-dimensional (2D) lattice quantum system. A finite-temperature phase;diagram of the 2D quantum Ising model in a transverse field is obtained;as a benchmark application.;2;0;0;0;2;1098-0121;WOS:000311912300002;;;J;de Jong, Maarten;Olmsted, David L.;van de Walle, Axel;Asta, Mark;First-principles study of the structural and elastic properties of;rhenium-based transition-metal alloys;PHYSICAL REVIEW B;86;22;224101;10.1103/PhysRevB.86.224101;DEC 5 2012;2012;Structural, energetic, and elastic properties of hexagonal-close-packed;rhenium-based transition-metal alloys are computed by density-functional;theory. The practical interest in these materials stems from the;attractive combination of mechanical properties displayed by rhenium for;structural applications requiring the combination of high melting;temperature and low-temperature ductility. Single-crystal elastic;constants, atomic volumes, axial c/a ratios, and dilute heats of;solution for Re-X alloys are computed, considering all possible;transition-metal solute species X. Calculated elastic constants are used;to compute values of a commonly considered intrinsic-ductility parameter;K/G, where K is the bulk modulus and G denotes the Voigt average of the;shear modulus, as well as the anisotropies in the Young's modulus and;shear modulus. The calculated properties show clear trends as a function;of d-band filling, which can be rationalized through tight-binding;theory. The results indicate that solutes to the left of rhenium in the;periodic table show a tendency to increase the intrinsic ductility;parameter, a trend that correlates with an increase of the c/a ratio;towards the ideal value associated optimal close packing. The Young's;modulus shows a trend towards increasing isotropy with alloying of;solutes X to the left of Re, while the shear modulus shows the opposite;trend but with an overall weaker dependence on solute additions. DOI:;10.1103/PhysRevB.86.224101;van de Walle, Axel/L-5676-2013;van de Walle, Axel/0000-0002-3415-1494;0;0;0;0;0;1098-0121;WOS:000311910900001;;;J;Fingerhut, Benjamin P.;Richter, Marten;Luo, Jun-Wei;Zunger, Alex;Mukamel, Shaul;Dissecting biexciton wave functions of self-assembled quantum dots by;double-quantum-coherence optical spectroscopy;PHYSICAL REVIEW B;86;23;235303;10.1103/PhysRevB.86.235303;DEC 5 2012;2012;Biexcitons feature prominently in various scenarios for utilization of;quantum dots (QDs) for enhancing the efficiencies of solar cells, and;for the generation of entangled photon pairs in single QD sources.;Two-dimensional double quantum coherence (2D-DQC) nonlinear optical;spectra provide novel spectroscopic signatures of such states beyond;global intensity and lifetime characteristics which are available by;more conventional techniques. We report the simulation of a prototype;2D-DQC optical experiment of a self-assembled InAs/GaAs dot. The;simulations consider the QD in different charged states and are based on;a state-of-the-art atomistic many-body pseudopotential method for the;calculation of the electronic structure and transition dipole matrix;elements. Comparison of the spectra of negatively charged, neutral, and;positively charged QD reveals optical signatures of their electronic;excitations. This technique directly accesses the biexciton (XX);energies as well as the projections of their wave functions on the;single-exciton manifold. These signals also provide a unique tool for;probing the charged state of the QD and thus the occupation of the;quantum state. Signatures of Pauli blockade of the creation of certain;single and two excitons due to charges on the particles are observed.;For all quantum states of the QD, the spectra reveal a strong;multiconfiguration character of the biexciton wave functions. Peak;intensities can be explained by interference of the contributing;Liouville space pathways.;Zunger, Alex/A-6733-2013; LUO, JUNWEI/B-6545-2013; LUO, JUN-WEI/A-8491-2010; Richter, Marten/B-7790-2008;Richter, Marten/0000-0003-4160-1008;2;0;0;0;2;1098-0121;WOS:000311911500003;;;J;Haskins, Justin B.;Moriarty, John A.;Hood, Randolph Q.;Polymorphism and melt in high-pressure tantalum;PHYSICAL REVIEW B;86;22;224104;10.1103/PhysRevB.86.224104;DEC 5 2012;2012;Recent small-cell (<150 atom) quantum molecular dynamics (QMD);simulations for Ta based on density functional theory (DFT) have;predicted a hexagonal omega (hex-omega)phase more stable than the normal;bcc phase at high temperature (T) and pressure (P) above 70 GPa [;Burakovsky et al., Phys. Rev. Lett. 104, 255702 (2010)]. Here we examine;possible high-T, P polymorphism in Ta with complementary DFT-based model;generalized pseudopotential theory (MGPT) multi-ion interatomic;potentials, which allow accurate treatment of much larger system sizes;(up to similar to 80000 atoms). We focus on candidate bcc, A15, fcc,;hcp, and hex-omega phases for the high-T, P phase diagram to 420 GPa,;studying the mechanical and relative thermodynamic stability of these;phases for both small and large computational cells. Our MGPT potentials;fully capture the T = 0 DFT energetics of these phases, while MGPT-MD;simulations demonstrate that the higher-energy fcc, hcp, and hex-omega;structures are only mechanically stabilized at high temperature by;large, size-dependent, anharmonic vibrational effects, with the;stability of the hex-omega phase also being found to be a sensitive;function of its c/a ratio. Both two-phase and Z-method melting;techniques have been used in MGPT-MD simulations to determine relative;phase stability and its size dependence. In the large-cell limit, the;two-phase method yields accurate equilibrium melt curves for all five;phases, with bcc producing the highest melt temperatures at all;pressures and hence being the most stable phase of those considered. The;two-phase bcc melt curve is also in good agreement with dynamic;experimental data as well as with the MGPT melt curve calculated from;bcc and liquid free energies. In contrast, we find that the Z method;produces only an upper bound to the equilibrium melt curve in the;large-cell limit. For the bcc and hex-omega structures, however, this is;a close upper bound within 5% of the two-phase results, although for the;A15, fcc, and hcp structures, the Z-melt curves are 25%-35% higher in;temperature than the two-phase results. Nonetheless, the Z method has;allowed us to study melt size effects in detail. We find these effects;to be either small or modest for the cubic bcc, A15, and fcc structures,;but to have a large impact on the hexagonal hcp and hex-omega melt;curves, which are dramatically pushed above that of bcc for simulation;cells less than 150 atoms. The melt size effects are driven by and;closely correlated with similar size effects on the mechanical stability;and the vibrational anharmonicity. We further show that for the same;simulation cell sizes and choice of c/a ratio, the MGPT-MD bcc and;hex-omega melt curves are in good agreement with the QMD results, so the;QMD prediction is confirmed in the small-cell limit. But in the;large-cell limit, the MGPT-MD hex-omega melt curve is always lowered;below that of bcc for any choice of c/a, so bcc is the most stable;phase. We conclude that for the non-bcc Ta phases studied, one requires;simulation cells of at least 250-500 atoms to be free of size effects;impacting mechanical and thermodynamic phase stability. DOI:;10.1103/PhysRevB.86.224104;8;0;0;0;8;1098-0121;WOS:000311910900004;;;J;Iwazaki, Yoshiki;Suzuki, Toshimasa;Mizuno, Youichi;Tsuneyuki, Shinji;Doping-induced phase transitions in ferroelectric BaTiO3 from;first-principles calculations;PHYSICAL REVIEW B;86;21;214103;10.1103/PhysRevB.86.214103;DEC 5 2012;2012;Carrier-electron-induced phase transition from tetragonal to cubic;phases in BaTiO3 is studied using first-principles calculation. Our;results show that the disappearance of the ferroelectric phase is an;intrinsic effect resulting from carrier electron doping in BaTiO3. We;further clarify that the lattice disorder induced by donor dopants such;as oxygen vacancies and substitutionally doped Nb5+ at Ti4+ sites;accelerates the disappearance of the tetragonal phase in BaTiO3.;7;0;0;0;7;1098-0121;WOS:000311910400001;;;J;Koshelev, A. E.;Phase diagram of Josephson junction between s and s(+/-) superconductors;in the dirty limit;PHYSICAL REVIEW B;86;21;214502;10.1103/PhysRevB.86.214502;DEC 5 2012;2012;The s(+/-) state in which the order parameter has different signs in;different bands is a leading candidate for the superconducting state in;the iron-based superconductors. We investigate a Josephson junction;between s and s(+/-) superconductors within microscopic theory.;Frustration, caused by interaction of the s-wave gap parameter with the;opposite-sign gaps of the s(+/-) superconductor, leads to nontrivial;phase diagram. When the partial Josephson coupling energy between the;s-wave superconductor and one of the s(+/-) bands dominates, s-wave gap;parameter aligns with the order parameter in this band. In this case,;the partial Josephson energies have different signs corresponding to;signs of the gap parameters. In the case of strong frustration,;corresponding to almost complete compensation of the total Josephson;energy, a nontrivial time-reversal-symmetry breaking (TRSB) state;realizes. In this state, all gap parameters become essentially complex.;As a consequence, this state provides realization for so-called;phi-junction with finite phase difference in the ground state. The width;of the TRSB state region is determined by the second harmonic in;Josephson current, proportional to sin(2 phi f), which appears in the;second order with respect to the boundary transparency. Using the;microscopic theory, we establish a range of parameters where different;states are realized. Our analysis shows insufficiency of the simple;phenomenological approach for treatment of this problem.;Koshelev, Alexei/K-3971-2013;Koshelev, Alexei/0000-0002-1167-5906;3;0;0;0;3;1098-0121;WOS:000311910400004;;;J;Krueger, Peter;Koutiri, Issam;Bourgeois, Sylvie;First-principles study of hexagonal tungsten trioxide: Nature of lattice;distortions and effect of potassium doping;PHYSICAL REVIEW B;86;22;224102;10.1103/PhysRevB.86.224102;DEC 5 2012;2012;A density functional theory study is reported on pure and potassium;doped tungsten trioxide. The nature of lattice distortions in the;hexagonal phase is analyzed and a new symmetry group is proposed. The;structure and stability of cubic, monoclinic, and hexagonal phases is;studied as a function of potassium doping and an approximate phase;diagram is derived. KxWO3 undergoes a monoclinic to hexagonal phase;transition at x similar to 3%. DOI: 10.1103/PhysRevB.86.224102;1;0;0;0;1;1098-0121;WOS:000311910900002;;;J;Landsgesell, S.;Abou-Ras, D.;Alber, D.;Prokes, K.;Wolf, T.;Direct evidence of chemical and crystallographic phase separation in;K0.65Fe1.74Se2;PHYSICAL REVIEW B;86;22;224502;10.1103/PhysRevB.86.224502;DEC 5 2012;2012;In the present work, we report on a chemical phase separation in;crystalline superconducting K0.65Fe1.74Se2, investigated by means of;magnetization experiments, scanning electron microscopy, electron;backscatter diffraction, and energy-dispersive x-ray spectrometry. It is;shown that the crystal consists of platelets oriented in < 100 > with an;approximated volume fraction of about 30% in the surrounding < 001 >;oriented matrix. The platelets (the matrix) are depleted in K (Fe) and;enriched in Fe (K). Chemical phase separation is demonstrated by a;stable, antiferromagnetic K0.8Fe1.6Se2 matrix, and KxFe2-y Se-2;platelets inducing superconductivity. This time-driven, chemical phase;separation is therefore responsible for various coexistent magnetic and;electrical properties measured in KxFeySe2 samples. DOI:;10.1103/PhysRevB.86.224502;Landsgesell, Sven/B-1467-2013; Prokes, Karel/J-5438-2013;Landsgesell, Sven/0000-0002-2469-3548; Prokes, Karel/0000-0002-7034-1738;10;0;0;0;10;1098-0121;WOS:000311910900005;;;J;Liu, Wei;Carrasco, Javier;Santra, Biswajit;Michaelides, Angelos;Scheffler, Matthias;Tkatchenko, Alexandre;Benzene adsorbed on metals: Concerted effect of covalency and van der;Waals bonding;PHYSICAL REVIEW B;86;24;245405;10.1103/PhysRevB.86.245405;DEC 5 2012;2012;The adsorption of aromatic molecules on metal surfaces plays a key role;in condensed matter physics and functional materials. Depending on the;strength of the interaction between the molecule and the surface, the;binding is typically classified as either physisorption or;chemisorption. Van der Waals (vdW) interactions contribute significantly;to the binding in physisorbed systems, but the role of the vdW energy in;chemisorbed systems remains unclear. Here we study the interaction of;benzene with the (111) surface of transition metals, ranging from weak;adsorption (Ag and Au) to strong adsorption (Pt, Pd, Ir, and Rh). When;vdW interactions are accurately accounted for, the barrier to adsorption;predicted by standard density-functional theory (DFT) calculations;essentially vanishes, producing a metastable precursor state on Pt and;Ir surfaces. Notably, vdW forces contribute more to the binding of;covalently bonded benzene than they do when benzene is physisorbed.;Comparison to experimental data demonstrates that some of the recently;developed methods for including vdW interactions in DFT allow;quantitative treatment of both weakly and strongly adsorbed aromatic;molecules on metal surfaces, extending the already excellent performance;found for molecules in the gas phase.;Michaelides, Angelos/K-8727-2012; Santra, Biswajit/C-4818-2008; Tkatchenko, Alexandre/E-7148-2011;Santra, Biswajit/0000-0003-3609-2106; Tkatchenko,;Alexandre/0000-0002-1012-4854;52;2;0;0;52;1098-0121;WOS:000311912300005;;;J;Ou, Xin;Koegler, Reinhard;Zhou, Hong-Bo;Anwand, Wolfgang;Grenzer, Joerg;Huebner, Rene;Voelskow, Matthias;Butterling, Maik;Zhou, Shengqiang;Skorupa, Wolfgang;Release of helium from vacancy defects in yttria-stabilized zirconia;under irradiation;PHYSICAL REVIEW B;86;22;224103;10.1103/PhysRevB.86.224103;DEC 5 2012;2012;Fission gas retention or release has a critical impact on the function;of advanced nuclear materials. Helium trapping in, and release from,;radiation defects induced by neutrons and by a decay in YSZ;(yttria-stabilized zirconia) is experimentally simulated using;synchronized Zr+ and He+ dual ion beam irradiation. The measured damage;profiles consist of two peaks which agree well with the calculated;profiles of implantation induced excess point defects. This special;implantation related effect has to be carefully considered in the;evaluation of experimental investigations which simulate isotropic;irradiation effects such as a decay. First-principles calculations show;that helium is energetically favorable to be trapped by Zr vacancies in;YSZ. Implanted helium alone in YSZ is accumulated in undesirable helium;bubbles and results in local surface swelling and lift-off. However,;under dual beam irradiation helium is released from vacancy defects and;is out-diffused at room temperature. Helium is mobilized by a;vacancy-assisted trapping/detrapping mechanism induced by the;simultaneous Zr+ ion implantation. This behavior avoids the deleterious;helium bubble formation and contributes to the suitable application;characteristics of YSZ which result in its excellent radiation hardness.;DOI: 10.1103/PhysRevB.86.224103;Zhou, Shengqiang/C-1497-2009;Zhou, Shengqiang/0000-0002-4885-799X;3;0;2;0;3;1098-0121;WOS:000311910900003;;;J;Pauly, C.;Bihlmayer, G.;Liebmann, M.;Grob, M.;Georgi, A.;Subramaniam, D.;Scholz, M. R.;Sanchez-Barriga, J.;Varykhalov, A.;Bluegel, S.;Rader, O.;Morgenstern, M.;Probing two topological surface bands of Sb2Te3 by spin-polarized;photoemission spectroscopy;PHYSICAL REVIEW B;86;23;235106;10.1103/PhysRevB.86.235106;DEC 5 2012;2012;Using high-resolution spin-and angle-resolved photoemission;spectroscopy, we map the electronic structure and spin texture of the;surface states of the topological insulator Sb2Te3. In combination with;density functional calculations (DFT), we directly show that Sb2Te3;exhibits a partially occupied, single spin-Dirac cone around the Fermi;energy E-F, which is topologically protected. DFT obtains a spin;polarization of the occupied Dirac cone states of 80-90%, which is in;reasonable agreement with the experimental data after careful background;subtraction. Furthermore, we observe a strongly spin-orbit split surface;band at lower energy. This state is found at E - E-F similar or equal to;-0.8 eV at the (Gamma) over bar point, disperses upward, and disappears;at about E - E-F = -0.4 eV into two different bulk bands. Along the;(Gamma) over bar-(K) over bar direction, the band is located within a;spin-orbit gap. According to an argument given by Pendry and Gurman in;1975, such a gap must contain a surface state, if it is located away;from the high-symmetry points of the Brillouin zone. Thus, the novel;spin-split state is protected by symmetry, too.;Bihlmayer, Gustav/G-5279-2013; Rader, Oliver/H-8498-2013; Sanchez-Barriga, Jaime/I-3493-2013; Varykhalov, Andrei/I-3571-2013; Blugel, Stefan/J-8323-2013; Liebmann, Marcus/G-6254-2012; Morgenstern, Markus/K-7785-2013;Bihlmayer, Gustav/0000-0002-6615-1122; Rader,;Oliver/0000-0003-3639-0971; Sanchez-Barriga, Jaime/0000-0001-9947-6700;;Varykhalov, Andrei/0000-0002-7901-3562; Blugel,;Stefan/0000-0001-9987-4733; Liebmann, Marcus/0000-0003-4787-0129;;Morgenstern, Markus/0000-0002-3993-6880;15;0;0;0;15;1098-0121;WOS:000311911500002;;;J;Silveirinha, Mario G.;Engheta, Nader;Metamaterial-inspired model for electron waves in bulk semiconductors;PHYSICAL REVIEW B;86;24;245302;10.1103/PhysRevB.86.245302;DEC 5 2012;2012;Based on an analogy with electromagnetic metamaterials, we develop an;effective medium description for the propagation of electron matter;waves in bulk semiconductors with a zinc-blende structure. It is;formally demonstrated that even though departing from a different;starting point, our theory gives results for the energy stationary;states consistent with Bastard's envelope-function approximation in the;long-wavelength limit. Using the proposed approach, we discuss the time;evolution of a wave packet in a bulk semiconductor with a zero-gap and;linear energy-momentum dispersion.;4;0;0;0;4;1098-0121;WOS:000311912300004;;;J;Valla, T.;Ji, Huiwen;Schoop, L. M.;Weber, A. P.;Pan, Z. -H.;Sadowski, J. T.;Vescovo, E.;Fedorov, A. V.;Caruso, A. N.;Gibson, Q. D.;Muechler, L.;Felser, C.;Cava, R. J.;Topological semimetal in a Bi-Bi2Se3 infinitely adaptive superlattice;phase;PHYSICAL REVIEW B;86;24;241101;10.1103/PhysRevB.86.241101;DEC 5 2012;2012;We report spin-and angle-resolved photoemission studies of a topological;semimetal from the infinitely adaptive series between elemental Bi and;Bi2Se3. The compound, based on Bi4Se3, is a 1:1 natural superlattice of;alternating Bi-2 layers and Bi2Se3 layers; the inclusion of S allows the;growth of large crystals, with the formula Bi4Se2.6S0.4. The crystals;cleave along the interfaces between the Bi-2 and Bi2Se3 layers, with the;surfaces obtained having alternating Bi or Se termination. The resulting;terraces, observed by photoemission electron microscopy, create avenues;suitable for the study of one-dimensional topological physics. The;electronic structure, determined by spin-and angle-resolved;photoemission spectroscopy, shows the existence of a surface state that;forms a large, hexagonally shaped Fermi surface around the Gamma point;of the surface Brillouin zone, with the spin structure indicating that;this material is a topological semimetal.;Felser, Claudia/A-5779-2009; Schoop, Leslie/A-4627-2013; Muchler, Lukas/A-4628-2013; Ji, Huiwen/O-5145-2014;Schoop, Leslie/0000-0003-3459-4241;;15;2;0;0;15;1098-0121;WOS:000311912300001;;;J;Witczak-Krempa, William;Ghaemi, Pouyan;Senthil, T.;Kim, Yong Baek;Universal transport near a quantum critical Mott transition in two;dimensions;PHYSICAL REVIEW B;86;24;245102;10.1103/PhysRevB.86.245102;DEC 5 2012;2012;We discuss the universal-transport signatures near a zero-temperature;continuous Mott transition between a Fermi liquid and a quantum spin;liquid in two spatial dimensions. The correlation-driven transition;occurs at fixed filling and involves fractionalization of the electron:;upon entering the spin liquid, a Fermi surface of neutral spinons;coupled to an internal gauge field emerges. We present a controlled;calculation of the value of the zero-temperature universal resistivity;jump predicted to occur at the transition. More generally, the behavior;of the universal scaling function that collapses the temperature-and;pressure-dependent resistivity is derived, and is shown to bear a strong;imprint of the emergent gauge fluctuations. We further predict a;universal jump of the thermal conductivity across the Mott transition,;which derives from the breaking of conformal invariance by the damped;gauge field, and leads to a violation of the Wiedemann-Franz law in the;quantum critical region. A connection to the quasitriangular organic;salts is made, where such a transition might occur. Finally, we present;some transport results for the pure rotor O(N) conformal field theory.;10;0;0;0;10;1098-0121;WOS:000311912300003;;;J;Apostolov, Stanislav;Levchenko, Alex;Josephson current and density of states in proximity circuits with;s(+)-superconductors;PHYSICAL REVIEW B;86;22;224501;10.1103/PhysRevB.86.224501;DEC 4 2012;2012;We study the emergent proximity effect in mesoscopic circuits that;involve a conventional superconductor and an unconventional pnictide;superconductor separated by a diffusive normal or ferromagnetic wire.;The focus is placed on revealing signatures of the proposed s(+)-state;of pnictides from the proximity-induced density of states and Josephson;current. We find analytically a universal result for the density of;states that exhibits both the Thouless gap at low energies and peculiar;features near the superconducting gap edges at higher energies. The;latter may be used to discriminate between s(+)- and s(++) symmetry;scenarios in scanning tunneling spectroscopy experiments. We also;calculate Josephson current-phase relationships for different junction;configurations, which are found to display robust 0-pi transitions for a;wide range of parameters.;3;0;0;0;3;1098-0121;WOS:000311910600005;;;J;Balci, Sinan;Kocabas, Coskun;Ates, Simge;Karademir, Ertugrul;Salihoglu, Omer;Aydinli, Atilla;Tuning surface plasmon-exciton coupling via thickness dependent plasmon;damping;PHYSICAL REVIEW B;86;23;235402;10.1103/PhysRevB.86.235402;DEC 4 2012;2012;In this paper, we report experimental and theoretical investigations on;tuning of the surface plasmon-exciton coupling by controlling the;plasmonic mode damping, which is defined by the plasmonic layer;thickness. The results reveal the formation of plasmon-exciton hybrid;state characterized by a tunable Rabi splitting with energies ranging;from 0 to 150 meV. Polarization-dependent spectroscopic reflection;measurements were employed to probe the dispersion of the coupled;system. The transfer matrix method and analytical calculations were used;to model the self-assembled J-aggregate/metal multilayer structures in;excellent agreement with experimental observations.;Kocabas, Coskun/C-6018-2013;6;0;0;0;6;1098-0121;WOS:000311911100002;;;J;Belashchenko, K. D.;Glasbrenner, J. K.;Wysocki, A. L.;Spin injection from a half-metal at finite temperatures;PHYSICAL REVIEW B;86;22;224402;10.1103/PhysRevB.86.224402;DEC 4 2012;2012;Spin injection from a half-metallic electrode in the presence of thermal;spin disorder is analyzed using a combination of random matrix theory,;spin-diffusion theory, and explicit simulations for the tight-binding;s-d model. It is shown that efficient spin injection from a half-metal;is possible as long as the effective resistance of the normal metal does;not exceed a characteristic value, which does not depend on the;resistance of the half-metallic electrode but, rather, is controlled by;spin-flip scattering at the interface. This condition can be formulated;as alpha less than or similar to l/l(sf)(N) T-c(-1) where a is the;relative deviation of the magnetization from saturation, l and l(sf)(N);are the mean-free path and the spin-diffusion length in the nonmagnetic;channel, and T-c is the transparency of the tunnel barrier at the;interface (if present). The general conclusions are confirmed by;tight-binding s-d model calculations. A rough estimate suggests that;efficient spin injection from true half-metallic ferromagnets into;silicon or copper may be possible at room temperature across a;transparent interface.;Wysocki, Aleksander/D-6928-2013;1;0;0;0;1;1098-0121;WOS:000311910600003;;;J;Bessas, D.;Sergueev, I.;Wille, H. -C.;Persson, J.;Ebling, D.;Hermann, R. P.;Lattice dynamics in Bi2Te3 and Sb2Te3: Te and Sb density of phonon;states;PHYSICAL REVIEW B;86;22;224301;10.1103/PhysRevB.86.224301;DEC 4 2012;2012;The lattice dynamics in Bi2Te3 and Sb2Te3 were investigated both;microscopically and macroscopically using Sb-121 and Te-125 nuclear;inelastic scattering, x-ray diffraction, and heat capacity measurements.;In combination with earlier inelastic neutron scattering data, the;element-specific density of phonon states was obtained for both;compounds and phonon polarization analysis was carried out for Bi2Te3. A;prominent peak in the Te specific density of phonon states at 13 meV,;that involves mainly in-plane vibrations, is mostly unaffected upon;substitution of Sb with Bi revealing vibrations with essentially Te;character. A significant softening is observed for the density of;vibrational states of Bi with respect to Sb, consistently with the mass;homology relation in the long-wavelength limit. In order to explain the;energy mismatch in the optical phonon region, a similar to 20% force;constant softening of the Sb-Te bond with respect to the Bi-Te bond is;required. The reduced average speed of sound at 20 K in Bi2Te3, 1.75(1);km/s, compared to Sb2Te3, 1.85(4) km/s, is not only related to the;larger mass density but also to a larger Debye level. The observed low;lattice thermal conductivity at 295 K, 2.4 Wm(-1)K(-1) for Sb2Te3 and;1.6 Wm(-1)K(-1) for Bi2Te3, cannot be explained by anharmonicity alone;given the rather modest Gruneisen parameters, 1.7(1) for Sb2Te3 and;1.5(1) for Bi2Te3, without accounting for the reduced speed of sound and;more importantly the low acoustic cutoff energy.;Wille, Hans-Christian/C-3881-2013; Hermann, Raphael/F-6257-2013; Bessas, Dimitrios/I-5262-2013;Hermann, Raphael/0000-0002-6138-5624; Bessas,;Dimitrios/0000-0003-0240-2540;5;0;1;0;5;1098-0121;WOS:000311910600002;;;J;de Resseguier, T.;Lescoute, E.;Loison, D.;Influence of elevated temperature on the wave propagation and spallation;in laser shock-loaded iron;PHYSICAL REVIEW B;86;21;214102;10.1103/PhysRevB.86.214102;DEC 4 2012;2012;Laser shock experiments have been performed on preheated iron samples to;address the role of initial temperature on the elastic limit, wave;propagation, and spall fracture in this metal over the temperature range;300-1000 K at very high expansion rates of the order of 3 x 10(6) s(-1).;Time-resolved measurements of the free-surface velocity indicate a;slight, roughly linear decrease of the spall strength with increasing;temperature, accompanied by a clear change from brittle to ductile;fracture behavior evidenced from post-shot examination of the recovered;samples. The results are discussed on the basis of simulations;accounting for laser-matter interaction, pressure wave propagation, and;subsequent polymorphic transformations throughout the sample thickness.;Over the explored range of loading conditions, the occurrence of such;transformations prior to spallation, which takes place near the;free-surface under tensile loading after reversion to the alpha phase,;does not seem to strongly affect dynamic fracture.;loison, didier/N-2122-2014;3;0;0;0;3;1098-0121;WOS:000311910100001;;;J;Ellis, David S.;Uchiyama, Hiroshi;Tsutsui, Satoshi;Sugimoto, Kunihisa;Kato, Kenichi;Ishikawa, Daisuke;Baron, Alfred Q. R.;Phonon softening and dispersion in EuTiO3;PHYSICAL REVIEW B;86;22;220301;10.1103/PhysRevB.86.220301;DEC 4 2012;2012;We measured phonon dispersion in single-crystal EuTiO3 using inelastic;x-ray scattering. Astructural transition to an antiferrodistortive phase;was found at a critical temperature T-0 = 287 +/- 1K using powder and;single-crystal x-ray diffraction. Clear softening of the zone boundary;R-point q = (0.5 0.5 0.5) acoustic phonon shows this to be a displacive;transition. The mode energy plotted against reduced temperature could be;seen to nearly overlap that of SrTiO3, suggesting a universal scaling;relation. Phonon dispersion was measured along Gamma-X (0 0 0) -> (0.5 0;0). Mode eigenvectors were obtained from a shell model consistent with;the q dependence of intensity and energy, which also showed that the;dispersion is nominally the same as in SrTiO3 at room temperature, but;corrected for mass. The lowest-energy optical mode, determined to be of;Slater character, softens approximately linearly with temperature until;the 70-100 K range where the softening stops, and at low temperature,;the mode disperses linearly near the zone center.;7;0;0;0;7;1098-0121;WOS:000311910600001;;;J;Fock, J.;Leijnse, M.;Jennum, K.;Zyazin, A. S.;Paaske, J.;Hedegard, P.;Nielsen, M. Brondsted;van der Zant, H. S. J.;Manipulation of organic polyradicals in a single-molecule transistor;PHYSICAL REVIEW B;86;23;235403;10.1103/PhysRevB.86.235403;DEC 4 2012;2012;Inspired by cotunneling spectroscopy of spin-states in a single;OPE5-based molecule, we investigate the prospects for electric control;of magnetism in purely organic molecules contacted in a three-terminal;geometry. Using the gate electrode, the molecule is reversibly switched;between three different redox states, with magnetic spectra revealing;both ferromagnetic and antiferromagnetic exchange couplings on the;molecule. These observations are shown to be captured by an effective;low-energy Heisenberg model, which we substantiate microscopically by a;simple valence bond description of the molecule. These preliminary;findings suggest an interesting route towards functionalized all-organic;molecular magnetism.;Fock, Jeppe/A-9074-2011;Fock, Jeppe/0000-0002-7515-4026;3;0;0;0;3;1098-0121;WOS:000311911100003;;;J;Li, P. H. Y.;Bishop, R. F.;Campbell, C. E.;Farnell, D. J. J.;Goetze, O.;Richter, J.;Spin-1/2 Heisenberg antiferromagnet on an anisotropic kagome lattice;PHYSICAL REVIEW B;86;21;214403;10.1103/PhysRevB.86.214403;DEC 4 2012;2012;We use the coupled-cluster method to study the zero-temperature;properties of an extended two-dimensional Heisenberg antiferromagnet;formed from spin-1/2 moments on an infinite spatially anisotropic kagome;lattice of corner-sharing isosceles triangles, with nearest-neighbor;bonds only. The bonds have exchange constants J(1) > 0 along two of the;three lattice directions and J(2) = kappa J(1) > 0 along the third. In;the classical limit, the ground-state (GS) phase for kappa < 1/2 has;collinear ferrimagnetic (Neel') order where the J(2)-coupled chain spins;are ferromagnetically ordered in one direction with the remaining spins;aligned in the opposite direction, while for kappa > 1/2 there exists an;infinite GS family of canted ferrimagnetic spin states, which are;energetically degenerate. For the spin-1/2 case, we find that quantum;analogs of both these classical states continue to exist as stable GS;phases in some regions of the anisotropy parameter kappa, namely, for 0;< kappa < kappa(c1) for the Neel' state and for (at least part of) the;region kappa > kappa(c2) for the canted phase. However, they are now;separated by a paramagnetic phase without either sort of magnetic order;in the region kappa(c1) < kappa < kappa(c2), which includes the;isotropic kagome point kappa = 1 where the stable GS phase is now;believed to be a topological (Z(2)) spin liquid. Our best numerical;estimates are kappa(c1) = 0.515 +/- 0.015 and kappa(c2) = 1.82 +/- 0.03.;Richter, Johannes/A-6339-2009; Bishop, Raymond/D-9715-2012;Bishop, Raymond/0000-0001-5565-0658;4;0;0;0;4;1098-0121;WOS:000311910100002;;;J;Monozon, B. S.;Schmelcher, P.;Bound and resonant impurity states in a narrow gapped armchair graphene;nanoribbon;PHYSICAL REVIEW B;86;24;245404;10.1103/PhysRevB.86.245404;DEC 4 2012;2012;An analytical study of discrete and resonant impurity quasi-Coulomb;states in a narrow gapped armchair graphene nanoribbon (GNR) is;performed. We employ the adiabatic approximation assuming that the;motions parallel ("slow") and perpendicular ("fast") to the boundaries;of the ribbon are separated adiabatically. The energy spectrum comprises;a sequence of series of quasi-Rydberg levels relevant to the slow motion;adjacent from the low energies to the size-quantized levels associated;with the fast motion. Only the series attributed to the ground;size-quantized subband is really discrete, while others corresponding to;the excited subbands consist of quasidiscrete (Fano resonant) levels of;nonzero energetic widths, caused by the coupling with the states of the;continuous spectrum branching from the low lying subbands. In the;two-and three-subband approximation the spectrum of the complex energies;of the impurity electron is derived in an explicit form. Narrowing the;GNR leads to an increase of the binding energy and the resonant width;both induced by the finite width of the ribbon. Displacing the impurity;center from the midpoint of the GNR causes the binding energy to;decrease, while the resonant width of the first excited Rydberg series;increases. As for the second excited series, their widths become;narrower with the shift of the impurity. A successful comparison of our;analytical results with those obtained by other theoretical and;experimental methods is presented. Estimates of the binding energies and;the resonant widths taken for the parameters of typical GNRs show that;not only the strictly discrete but also some resonant states are quite;stable and could be studied experimentally in doped GNRs.;Monozon, Boris/E-6412-2012; Schmelcher, Peter/D-9592-2014;Schmelcher, Peter/0000-0002-2637-0937;0;0;0;0;0;1098-0121;WOS:000311911900002;;;J;Thiaville, Andre;Vukadinovic, Nicolas;Acher, Olivier;Sum rule for the magnetic permeability of arbitrary textures;PHYSICAL REVIEW B;86;21;214404;10.1103/PhysRevB.86.214404;DEC 4 2012;2012;The f-sum rule for the magnetic permeability, derived previously for an;assembly of isolated macrospins, is generalized for an arbitrary;nonuniform three-dimensional magnetization texture, in which the;magnetizations at different points are coupled by exchange and;magnetostatic interactions. The sum value depends only on the magnetic;texture at rest. It has no direct contribution from the exchange energy,;but depends on the anisotropy, applied field, and demagnetizing;energies. The derived formula is tested against numerical calculations;for several complex and very different magnetization structures. This;generalized sum rule should be useful for experiments, numerical;simulations, and metrology.;1;0;0;0;1;1098-0121;WOS:000311910100003;;;J;Troc, R.;Gajek, Z.;Pikul, A.;Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as;seen in magnetic, transport, and specific-heat data;PHYSICAL REVIEW B;86;22;224403;10.1103/PhysRevB.86.224403;DEC 4 2012;2012;Single-crystalline UGe2 was investigated by means of magnetic;susceptibility, magnetization, electrical resistivity,;magnetoresistivity, and specific-heat measurements, all carried out in;wide temperature and magnetic-field ranges. An analysis of the obtained;data points out the dual behavior of the 5f electrons in this compound,;i. e., possessing simultaneously local and itinerant characters in two;substates. The magnetic and thermal characteristics of the compound were;modeled using the effective crystal field (CF) in the intermediate;coupling scheme and initial parameters obtained in the angular overlap;model. Various configurations of the localized 5f(n) (n = 1, 2, and 3);electrons on the uranium ion have been probed. The best results were;obtained for the 5f(2) (U4+) configuration. The CF parameters obtained;in the paramagnetic region allowed us to reproduce satisfactorily the;experimental findings in the whole temperature range including also the;magnitude of the ordered magnetic moment of uranium at low temperature.;The electrical resistivity data after subtraction of the phonon;contribution reveal the presence of a Kondo-like interaction in UGe2;supporting the idea of partial localization of the 5f electrons in UGe2.;On the other hand, magnetoresistivity and an excess of specific heat;originated from the hybridized (itinerant) part of 5f states, apparent;around the characteristic temperature T*, give a distinct signature for;the presence of the coupled charge-density wave and spin-density wave;fluctuations over all the ferromagnetic region with a maximum at T*,;postulated earlier in the literature.;7;0;0;0;7;1098-0121;WOS:000311910600004;;;J;Williams, T. J.;Yamani, Z.;Butch, N. P.;Luke, G. M.;Maple, M. B.;Buyers, W. J. L.;Neutron scattering study of URu2-xRexSi2 (x=0.10): Driving order towards;quantum criticality;PHYSICAL REVIEW B;86;23;235104;10.1103/PhysRevB.86.235104;DEC 4 2012;2012;We report inelastic neutron scattering measurements in the hidden order;state of URu2-xRexSi2 with x = 0.10. We observe that towards the;ferromagnetic quantum critical point induced by the negative chemical;pressure of Re doping, the gapped incommensurate fluctuations are robust;and comparable in intensity to the parent material. As the Re doping;moves the system toward the quantum critical point, the commensurate;spin fluctuations related to hidden order weaken, display a shortened;lifetime, and slow down. Halfway to the quantum critical point, the;hidden order phase survives, albeit weakened, in contrast to its;destruction by hydrostatic pressure and by positive chemical pressure;from Rh doping.;yamani, zahra/B-7892-2012; Luke, Graeme/A-9094-2010;0;0;0;0;0;1098-0121;WOS:000311911100001;;;J;Wolfowicz, Gary;Simmons, Stephanie;Tyryshkin, Alexei M.;George, Richard E.;Riemann, Helge;Abrosimov, Nikolai V.;Becker, Peter;Pohl, Hans-Joachim;Lyon, Stephen A.;Thewalt, Mike L. W.;Morton, John J. L.;Decoherence mechanisms of Bi-209 donor electron spins in isotopically;pure Si-28;PHYSICAL REVIEW B;86;24;245301;10.1103/PhysRevB.86.245301;DEC 4 2012;2012;Bismuth (Bi-209) is the deepest group V donor in silicon and possesses;the most extreme characteristics such as a 9/2 nuclear spin and a 1.5;GHz hyperfine coupling. These lead to several potential advantages for a;Si:Bi donor electron spin qubit compared to the more common phosphorus;donor. Most previous studies on Si: Bi have been performed using natural;silicon where linewidths and electron spin coherence times are limited;by the presence of Si-29 impurities. Here, we describe electron spin;resonance (ESR) and electron nuclear double resonance (ENDOR) studies on;Bi-209 in isotopically pure Si-28. ESR and ENDOR linewidths, transition;probabilities, and coherence times are understood in terms of the spin;Hamiltonian parameters showing a dependence on field and m(I) of the;Bi-209 nuclear spin. We explore various decoherence mechanisms;applicable to the donor electron spin, measuring coherence times up to;700 ms at 1.7 K at X band, comparable with Si-28:P. Importantly, the;coherence times we measure follow closely to the calculated field;gradients of the transition frequencies (df/dB), providing a strong;motivation to explore "clock" transitions where coherence lifetimes;could be further enhanced.;Morton, John/I-3515-2013;6;1;0;0;6;1098-0121;WOS:000311911900001;;;J;Armbruster, Oskar;Lungenschmied, Christoph;Bauer, Siegfried;Investigation of trap states and mobility in organic semiconductor;devices by dielectric spectroscopy: Oxygen-doped P3HT:PCBM solar cells;PHYSICAL REVIEW B;86;23;235201;10.1103/PhysRevB.86.235201;DEC 3 2012;2012;We investigate the dielectric response of solar cell devices based on;oxygen-doped poly(3-hexylthiophene):[6,6]-phenyl-C-61-butyric acid;methyl ester (P3HT:PCBM) blends as a function of temperature between 133;K and 303 K. The spectra are analyzed using a recently introduced model;[O. Armbruster, C. Lungenschmied, and S. Bauer, Phys. Rev. B 84, 085208;(2011)] which is based on a trapping and reemission mechanism of charge;carriers. A dominating trap depth of 130 meV is determined and the;broadening of this trap level identified as purely thermal. In addition;we estimate the density of charge carriers after doping as well as their;mobility. We show that the concentration of mobile holes approximately;doubles by heating the device from the lowest to the highest measured;temperature. This is indicative of a second, shallow trap level of;approximately 14 meV. Dielectric spectroscopy hence proves to be a;valuable tool to assess device parameters such as dopant concentration,;charge carrier transport characteristics, and mobility which are of;crucial interest for understanding degradation in organic semiconductor;devices.;Bauer, Siegfried/A-2354-2009; Armbruster, Oskar/G-1154-2014;Armbruster, Oskar/0000-0002-4235-4451;3;0;0;0;3;1098-0121;WOS:000311806300004;;;J;Chen, Bo;Abbey, Brian;Dilanian, Ruben;Balaur, Eugeniu;van Riessen, Grant;Junker, Mark;Tran, Chanh Q.;Jones, Michael W. M.;Peele, Andrew G.;McNulty, Ian;Vine, David J.;Putkunz, Corey T.;Quiney, Harry M.;Nugent, Keith A.;Diffraction imaging: The limits of partial coherence;PHYSICAL REVIEW B;86;23;235401;10.1103/PhysRevB.86.235401;DEC 3 2012;2012;Coherent diffraction imaging (CDI) typically requires that the source;should be highly coherent both laterally and longitudinally. In this;paper, we demonstrate that lateral and longitudinal partial coherence;can be successfully included in a CDI reconstruction algorithm;simultaneously using experimental x-ray data. We study the interplay;between lateral partial coherence and longitudinal partial coherence and;their relative influence on CDI. We compare our results against the;coherence criteria published by Spence et al. [Spence et al.,;Ultramicroscopy 101, 149 (2004)] and show that for iterative ab initio;phase-recovery algorithms based on those typically used in CDI and in;cases where the coherence properties are known, we are able to relax the;minimal coherence requirements by a factor of 2 both laterally and;longitudinally, potentially yielding significant reduction in exposure;time.;Jones, Michael/M-6895-2013; Abbey, Brian/D-3274-2011;Jones, Michael/0000-0002-0720-8715;;5;1;0;0;5;1098-0121;WOS:000311806300008;;;J;Gawarecki, Krzysztof;Lueker, Sebastian;Reiter, Doris E.;Kuhn, Tilmann;Glaessl, Martin;Axt, Vollrath Martin;Grodecka-Grad, Anna;Machnikowski, Pawel;Dephasing in the adiabatic rapid passage in quantum dots: Role of;phonon-assisted biexciton generation;PHYSICAL REVIEW B;86;23;235301;10.1103/PhysRevB.86.235301;DEC 3 2012;2012;We study the evolution of an exciton confined in a quantum dot;adiabatically controlled by a frequency-swept (chirped) laser pulse in;the presence of carrier-phonon coupling. We focus on the dynamics;induced by a linearly polarized beam and analyze the decoherence due to;phonon-assisted biexciton generation. We show that if the biexciton;state is shifted down by a few meV, as is typically the case, then the;resulting decoherence is strong even at low temperatures. As a result,;efficient state preparation is restricted to a small parameter area;corresponding to low temperatures, positive chirps, and moderate pulse;areas.;Kuhn, Tilmann/C-1190-2008;6;0;0;0;6;1098-0121;WOS:000311806300006;;;J;Hellstrom, Matti;Spangberg, Daniel;Hermansson, Kersti;Broqvist, Peter;Cu dimer formation mechanism on the ZnO(10(1)over-bar0) surface;PHYSICAL REVIEW B;86;23;235302;10.1103/PhysRevB.86.235302;DEC 3 2012;2012;The formation of Cu dimers on the ZnO(10 (1) over bar0) surface has been;studied using hybrid density functional theory. Depending on the;adsorption site, Cu atoms are found to adsorb with either oxidation;state 0 or +1. In the latter case, the Cu atom has donated an electron;to the ZnO conduction band. The two modes of adsorption display similar;stability at low coverages, while at higher coverages the neutral;species is more stable. Single Cu atoms diffuse across the ZnO(10 (1);over bar0) surface with small barriers of migration (0.3-0.4 eV) along;ZnO[1 (2) over bar 10], repeatedly switching their oxidation states,;while the barrier along ZnO[0001] is significantly higher (>1.5 eV). The;formation of a Cu dimer from two adsorbed Cu atoms is energetically;favorable with two competing structures of similar stability, both being;charge neutral. The minimum energy paths for Cu atom diffusion and dimer;formation are characterized by at least one of the two Cu atoms being in;oxidation state 0.;5;0;0;0;5;1098-0121;WOS:000311806300007;;;J;Huang, Yu-Kun;Chen, Pochung;Kao, Ying-Jer;Accurate computation of low-temperature thermodynamics for quantum spin;chains;PHYSICAL REVIEW B;86;23;235102;10.1103/PhysRevB.86.235102;DEC 3 2012;2012;We apply the biorthonormal transfer-matrix renormalization group (BTMRG);[Huang, Phys. Rev. E 83, 036702 (2011)] to study low-temperature;properties of quantum spin chains. Simulations on anisotropic Heisenberg;spin-1/2 chains demonstrate that the BTMRG outperforms the conventional;transfer-matrix renormalization group by successfully accessing far;lower temperature than previously reported, while retaining the same;level of accuracy. The power of the method is further illustrated by the;calculation of the low-temperature specific heat for a frustrated spin;chain.;Kao, Ying Jer/B-5297-2009; Chen, Pochung/G-1241-2010;Kao, Ying Jer/0000-0002-3329-6018;;4;0;0;0;4;1098-0121;WOS:000311806300002;;;J;Kim, Jin Hee;Rhyee, Jong-Soo;Kwon, Yong Seung;Magnon gap formation and charge density wave effect on thermoelectric;properties in the SmNiC2 compound;PHYSICAL REVIEW B;86;23;235101;10.1103/PhysRevB.86.235101;DEC 3 2012;2012;We studied the electrical, thermal, and thermoelectric properties of the;polycrystalline compound of SmNiC2. The electrical resistivity and;magnetization measurement show the interplay between the charge density;wave at T-CDW = 150 K and the ferromagnetic ordering of T-c = 18 K.;Below the ferromagnetic transition temperature, we observed the magnon;gap formation of Delta similar or equal to 4.3- 4.4 meV by rho(T) and;C-p (T) measurements. The charge density wave is attributed to the;increase of the Seebeck coefficient resulting in the increase of the;power factor S-2 sigma. The thermal conductivity anomalously increases;with increasing temperature along the whole measured temperature range,;which implies the weak attribution of Umklapp phonon scattering. The;thermoelectric figure of merit ZT significantly increases due to the;increase of the power factor at T-CDW = 150 K. Here we argue that the;competing interaction between electron-phonon and electron-magnon;couplings exhibits the unconventional behavior of electrical and thermal;properties.;6;0;1;0;6;1098-0121;WOS:000311806300001;;;J;Osorio-Guillen, J. M.;Larrauri-Pizarro, Y. D.;Dalpian, G. M.;Pressure-induced metal-insulator transition and absence of magnetic;order in FeGa3 from a first-principles study;PHYSICAL REVIEW B;86;23;235202;10.1103/PhysRevB.86.235202;DEC 3 2012;2012;The intermetallic compound FeGa3 is a narrow-gap semiconductor with a;measured gap between 0.2 and 0.6 eV. The presence of iron d states on;the top of the valence band and on the bottom of the conduction band,;together with its moderate electronic correlation (U/W similar to 0.6),;have led to the question of whether there is magnetic order in this;compound. We have examined the possible presence of magnetism in FeGa3;as well as its electronic structure at high pressures, using the density;functional theory (DFT) + U method with the intermediated;double-counting scheme. We have found that for an optimized value of the;Yukawa screening length., there is no magnetic moment on the iron ions;(mu = 0), implying that FeGa3 is nonmagnetic. We have also found that;around a pressure of 25 GPa a metal-insulator transition takes place.;Osorio-Guillen, Jorge/B-7587-2008; Dalpian, Gustavo/B-9746-2008;Osorio-Guillen, Jorge/0000-0002-7384-8999;;3;0;0;0;3;1098-0121;WOS:000311806300005;;;J;Yuan, Xun;Zhang, Yubo;Abtew, Tesfaye A.;Zhang, Peihong;Zhang, Wenqing;VO2: Orbital competition, magnetism, and phase stability;PHYSICAL REVIEW B;86;23;235103;10.1103/PhysRevB.86.235103;DEC 3 2012;2012;The relative phase stability of VO2 is one of the most fundamental;issues concerning the metal-insulator transition in this material but;has been so far largely unexplored theoretically. We investigate the;relative stability of various phases of VO2 using different levels of;energy functionals within density functional theory (DFT). It is found;that straightforward applications of several popular energy functionals,;including the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, result in;a wrong prediction for the ground state of VO2. In particular, although;the HSE and DFT + U methods are able to produce a band gap in the M-1;phase, they strongly favor the formation of local magnetic moments, a;result that clearly disagrees with experiments. We also examine the;effect of the occupation and the redistribution of the d derived t(2g);(i.e., d(xz), d(yz), and d(x2-y2)) orbitals of V atoms on the calculated;relative phase stability of VO2. We find that a small change in d;occupation can result in a drastically different theoretical prediction.;With the introduction of an orbital-dependent potential, a complete;separation between the d(x2-y2) derived valence band and d(xz) and d(yz);derived conduction bands in the M-1 phase is achieved, resulting in a;slight redistribution of the d occupation and a more faithful account of;the polarization of the t(2g) orbitals. This slight rearrangement of the;d occupation also leads to a relative phase stability of VO2 ( including;structural and magnetic phases) that agrees well with experiment.;Zhang, Wenqing/K-1236-2012; Zhang, Peihong/D-2787-2012;4;0;0;0;4;1098-0121;WOS:000311806300003;;;J;Campi, Davide;Bernasconi, Marco;Benedek, Giorgio;Electronic properties and lattice dynamics of the As(111) surface;PHYSICAL REVIEW B;86;24;245403;10.1103/PhysRevB.86.245403;DEC 3 2012;2012;The bulk and surface electronic and structural properties of As(111);have been studied with first-principles methods. The inclusion of;spin-orbit interaction reveals that As shares the same topologically;nontrivial order of the bulk electronic bands of Sb which gives rise to;two spin-polarized surface states connecting valence-like and;conduction-like states. Bulk and surface phonons have been calculated by;means of density functional perturbation theory. The surface phonon;bands reveal features related to a remarkable stiffening of the surface;bilayer with respect to the bulk ones similarly to what is measured for;the Bi(111) and to what is expected for the Sb(111) surface.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000311806500003;;;J;Chakraborty, Akash;Wenk, Paul;Bouzerar, Richard;Bouzerar, Georges;Spontaneous magnetization in the presence of nanoscale inhomogeneities;in diluted magnetic systems;PHYSICAL REVIEW B;86;21;214402;10.1103/PhysRevB.86.214402;DEC 3 2012;2012;The presence of nanoscale inhomogeneities has been experimentally;evidenced in several diluted magnetic systems, which in turn often leads;to interesting physical phenomena. However, a proper theoretical;understanding of the underlying physics is lacking in most of the cases.;Here, we present a detailed and comprehensive theoretical study of the;effects of nanoscale inhomogeneities on the temperature-dependent;spontaneous magnetization in diluted magnetic systems, which is found to;exhibit an unusual and unconventional behavior. The effects of impurity;clustering on the magnetization response have hardly been studied until;now. We show that nanosized clusters of magnetic impurities can lead to;drastic effects on the magnetization compared to that of homogeneously;diluted compounds. The anomalous nature of the magnetization curves;strongly depends on the relative concentration of the inhomogeneities as;well as the effective range of the exchange interactions. In addition,;we also provide a systematic discussion of the nature of the;distributions of the local magnetizations.;3;0;0;0;3;1098-0121;WOS:000311805500004;;;J;Dmitriev, A. P.;Gornyi, I. V.;Polyakov, D. G.;Coulomb drag between ballistic quantum wires;PHYSICAL REVIEW B;86;24;245402;10.1103/PhysRevB.86.245402;DEC 3 2012;2012;We develop a kinetic equation description of Coulomb drag between;ballistic one-dimensional electron systems, which enables us to;demonstrate that equilibration processes between right- and left-moving;electrons are crucially important for establishing dc drag. In;one-dimensional geometry, this type of equilibration requires either;backscattering near the Fermi level or scattering with small-momentum;transfer near the bottom of the electron spectrum. Importantly, pairwise;forward scattering in the vicinity of the Fermi surface alone is not;sufficient to produce a nonzero dc drag resistivity rho(D), in contrast;to a number of works that have studied Coulomb drag due to this;mechanism of scattering before. We show that slow equilibration between;two subsystems of electrons of opposite chirality, "bottlenecked" by;inelastic collisions involving cold electrons near the bottom of the;conduction band, leads to a strong suppression of Coulomb drag, which;results in an activation dependence of rho(D) on temperature, instead of;the conventional power law. We demonstrate the emergence of a drag;regime in which rho(D) does not depend on the strength of interwire;interactions, while depending strongly on the strength of interactions;inside the wires.;4;0;0;0;4;1098-0121;WOS:000311806500002;;;J;Etz, Corina;Costa, Marcio;Eriksson, Olle;Bergman, Anders;Accelerating the switching of magnetic nanoclusters by anisotropy-driven;magnetization dynamics;PHYSICAL REVIEW B;86;22;224401;10.1103/PhysRevB.86.224401;DEC 3 2012;2012;In this work, the magnetization dynamics of clusters supported on;nonmagnetic substrates is shown to exhibit a complex response when;subjected to external magnetic fields. The field-driven magnetization;reversal of small Co clusters deposited on a Cu(111) surface has been;studied by means of first-principles calculations and atomistic spin;dynamics simulations. For applied fields ranging from 1 to 10 Tesla, we;observe a coherent magnetization reversal with switching times in the;range of several tenths of picoseconds to several nanoseconds, depending;on the field strength. We find a nonmonotonous dependence of the;switching times with respect to the strength of the applied field, which;we prove has its origin in the complex magnetic anisotropy landscape of;these low-dimensional systems. This effect is shown to be stable for;temperatures around 10 K, and is possible to realize over a range of;exchange interactions and anisotropy landscapes. Possible experimental;routes to achieve this unique switching behavior are discussed.;Bergman, Anders/H-7996-2012; Etz, Corina/E-3112-2014; Eriksson, Olle/E-3265-2014;Bergman, Anders/0000-0002-5134-1978;;3;1;0;0;3;1098-0121;WOS:000311805700003;;;J;Harada, S.;Zhou, J. J.;Yao, Y. G.;Inada, Y.;Zheng, Guo-qing;Abrupt enhancement of noncentrosymmetry and appearance of a spin-triplet;superconducting state in Li-2(Pd1-xPtx)(3)B beyond x=0.8;PHYSICAL REVIEW B;86;22;220502;10.1103/PhysRevB.86.220502;DEC 3 2012;2012;We report synthesis, Pt-195, B-11, and Li-7 NMR measurements, and;first-principles band calculations for noncentrosymmetric;superconductors Li-2(Pd1-xPtx)(3)B (x = 0, 0.2, 0.5, 0.8, 0.84, 0.9, and;1). For 0 <= x <= 0.8, the spin-lattice relaxation rate 1/T-1 shows a;clear coherence peak just below T-c, decreasing exponentially at low;temperature, and the Knight shift K-195 decreases below Tc. For x = 0.9;and 1.0, in contrast, 1/T-1 shows no coherence peak but a T-3 variation;and K-195 remains unchanged across T-c. These results indicate that the;superconducting state changes drastically from a spin-singlet dominant;to a spin-triplet dominant state at x = 0.8. We find that the distortion;of B(Pt,Pd)(6) increases abruptly above x = 0.8, which leads to an;abrupt enhancement of the asymmetric spin-orbit coupling as confirmed by;band calculation. Such structure distortion that enhances the extent of;inversion-symmetry breaking is primarily responsible for the pairing;symmetry evolution. The insight obtained here provides a guideline for;searching for noncentrosymmetric superconductors with a large;spin-triplet component.;Yao, Yugui/A-8411-2012; Zheng, Guo-qing/B-1524-2011;6;0;0;0;6;1098-0121;WOS:000311805700002;;;J;Huang, C. L.;Fritsch, V.;Kittler, W.;v. Loehneysen, H.;Low-temperature properties of CeAu2Ge2 single crystals grown from Au-Ge;and Sn flux;PHYSICAL REVIEW B;86;21;214401;10.1103/PhysRevB.86.214401;DEC 3 2012;2012;The specific heat of CeAu2Ge2 single crystals grown from Au-Ge (AGF) or;Sn flux (SF) was measured at temperatures T between 1.8 and 200 K. Two;magnetic transitions are observed in the zero-field specific heat at;12.1 and 14.5 K in the AGF sample, while only a single sharp transition;at 9.2 K is seen in the SF sample, confirming our recent susceptibility;results [Fritsch et al., Phys. Rev. B 84, 104446 (2011)]. We observe;several field-induced transitions in the magnetoresistance of the AGF;sample measured at 1.6 and 2.3 K in accordance with the B-T phase;diagram constructed from isothermal magnetization curves M(B). In;addition, we have measured M(B) under hydrostatic pressure P up to 10.5;kbar. The Neel temperature T-N increases linearly with P at a small rate;of 0.049 K/kbar, which suggests that, if T-N(P) is attributed to a pure;volume effect, this compound is close to the maximum transition;temperature of the Doniach diagram. The transition fields B-M between;the field-induced phases increase linearly with P as well. The;comparable Gruneisen parameters of T-N and B-M indicate that the energy;scale depending on the sample's volume is given by the antiferromagnetic;correlations and not by the Kondo effect. We discuss possible reasons;for the different magnetic behavior of AGF and SF samples.;Huang, Chien-Lung/O-2028-2013;2;0;0;0;2;1098-0121;WOS:000311805500003;;;J;Jadczak, J.;Kubisa, M.;Ryczko, K.;Bryja, L.;Potemski, M.;High magnetic field spin splitting of excitons in asymmetric GaAs;quantum wells;PHYSICAL REVIEW B;86;24;245401;10.1103/PhysRevB.86.245401;DEC 3 2012;2012;Low-temperature photoluminescence from high-quality GaAs quantum wells,;asymmetrically doped with carbon, are investigated under high magnetic;fields (up to 20 T) directed along the [001] growth axis. At higher;fields, in the sigma(-) polarized emission, we observe two well-resolved;lines which are attributed to the recombination of neutral (X) and;charged (X+) excitons. In contrast, only the neutral exciton line is;observed for the sigma(+) polarization. From the difference of the X;line positions for the two polarizations we determine the effective;Zeeman splitting of neutral excitons and then the g factor g(h) of;confined holes. We find that g(h) depends substantially on the well size;and changes the sign at moderate magnetic fields. To explain the;experimental results, the valence Landau levels are calculated using the;Luttinger model beyond the axial approximation. We demonstrate that;mainly the excited hole levels contribute to the excitonic state at;higher magnetic fields. Due to their light-hole character, resulting;from the valence-band mixing, the excited hole states have a sizable;overlap with the electron states confined far from the doped barrier.;The calculated values of g(h) are in an excellent quantitative agreement;with the experimental data.;2;0;0;0;2;1098-0121;WOS:000311806500001;;;J;Lane, Nina J.;Vogel, Sven C.;Hug, Gilles;Togo, Atsushi;Chaput, Laurent;Hultman, Lars;Barsoum, Michel W.;Neutron diffraction measurements and first-principles study of thermal;motion of atoms in select M(n+1)AX(n) and binary MX transition-metal;carbide phases;PHYSICAL REVIEW B;86;21;214301;10.1103/PhysRevB.86.214301;DEC 3 2012;2012;Herein, we compare the thermal vibrations of atoms in select ternary;carbides with the formula M(n+1)AX(n) ("MAX phases," M = Ti, Cr; A = Al,;Si, Ge; X = C, N) as determined from first-principles phonon;calculations to those obtained from high-temperature neutron powder;diffraction studies. The transition metal carbides TiC, TaC, and WC are;also studied to test our methodology on simpler carbides. Good;qualitative and quantitative agreement is found between predicted and;experimental values for the binary carbides. For all the MAX phases;studied-Ti3SiC2, Ti3GeC2, Ti2AlN, Cr2GeC and Ti4AlN3-density functional;theory calculations predict that the A element vibrates with the highest;amplitude and does so anisotropically with a higher amplitude within the;basal plane, which is in line with earlier results from high-temperature;neutron diffraction studies. In some cases, there are quantitative;differences in the absolute values between the theoretical and;experimental atomic displacement parameters (ADPs), such as reversal of;anisotropy or a systematic offset of temperature-dependent ADPs. The;mode-dependent Gruneisen parameters are also computed to explore the;anharmonicity in the system.;Lujan Center, LANL/G-4896-2012;4;0;0;0;4;1098-0121;WOS:000311805500002;;;J;Niemann, R.;Baro, J.;Heczko, O.;Schultz, L.;Faehler, S.;Vives, E.;Manosa, L.;Planes, A.;Tuning avalanche criticality: Acoustic emission during the martensitic;transformation of a compressed Ni-Mn-Ga single crystal;PHYSICAL REVIEW B;86;21;214101;10.1103/PhysRevB.86.214101;DEC 3 2012;2012;The propagation of a phase front during a thermally induced martensitic;transition is discontinuous due to pinning at various defects, an effect;which results in acoustic emission. Here we analyze the consequences of;an applied compressive stress exemplarily on a Ni50.4Mn27.9Ga21.7 single;crystal. Our experiments show that the distribution of the energies of;the acoustic emission events follows a power law for more than three;decades. This indicates that the transition exhibits avalanche;criticality. The exponent characterizing the distribution of energies;depends on the applied stress, and decreases from 1.9 +/- 0.1 at zero;stress to 1.5 +/- 0.2 at stress above 3 MPa. This decrease could be;attributed to the reduced multiplicity of variants possible under;uniaxial compression.;Niemann, Robert/F-3634-2012; Schultz, Ludwig/B-3383-2010; Manosa, Lluis/D-8579-2014; Heczko, Oleg/G-9355-2014; Vives, Eduard/I-4821-2014;Manosa, Lluis/0000-0002-1182-2670; Vives, Eduard/0000-0002-5916-7214;4;0;0;0;4;1098-0121;WOS:000311805500001;;;J;Usui, Hidetomo;Suzuki, Katsuhiro;Kuroki, Kazuhiko;Minimal electronic models for superconducting BiS2 layers;PHYSICAL REVIEW B;86;22;220501;10.1103/PhysRevB.86.220501;DEC 3 2012;2012;We construct minimal electronic models for a newly discovered;superconductor LaO1-xFxBiS2 (T-c = 10.6 K) possessing BiS2 layers based;on a first-principles band calculation. First, we obtain a model;consisting of two Bi 6p and two S 3p orbitals, which give nearly;electron-hole symmetric bands. Further focusing on the bands that;intersect the Fermi level, we obtain a model with two p orbitals. The;two bands (per BiS2 layer) have a quasi-one-dimensional character with a;double minimum dispersion, which gives good nesting of the Fermi;surface. At around x similar to 0.5 the topology of the Fermi surface;changes, so that the density of states at the Fermi level becomes large.;Possible pairing states are discussed.;42;0;0;0;42;1098-0121;WOS:000311805700001;;;J;Cammarata, Antonio;Rondinelli, James M.;Spin-assisted covalent bond mechanism in "charge-ordering" perovskite;oxides;PHYSICAL REVIEW B;86;19;195144;10.1103/PhysRevB.86.195144;NOV 30 2012;2012;First-principles density functional calculations on the metal-insulator;transition (MIT) in perovskite CaFeO3 point to local ferromagnetic;coupling as the microscopic origin for the electronic "charge order";transition. Our atomic, electronic, and magnetic structure analyses;reveal that the MIT results from a spin-assisted covalent bonding;mechanism between the O 2p and Fe 3d states with anisotropic Fe-O bonds;and negligible intersite Fe-Fe charge transfer. We suggest that control;of the lattice distortions, which mediate the covalent bond formation,;in oxides containing late transition-metal row cations in high valence;states provides a platform to tailor electronic transitions.;Rondinelli, James/A-2071-2009; Cammarata, Antonio/A-4883-2014;Rondinelli, James/0000-0003-0508-2175; Cammarata,;Antonio/0000-0002-5691-0682;7;0;0;0;7;1098-0121;WOS:000311715000003;;;J;Clem, John R.;Kogan, V. G.;Kinetic impedance and depairing in thin and narrow superconducting films;PHYSICAL REVIEW B;86;17;174521;10.1103/PhysRevB.86.174521;NOV 30 2012;2012;We use both Eilenberger-Usadel and Ginzburg-Landau (GL) theory to;calculate the superfluid's temperature-dependent kinetic inductance for;all currents up to the depairing current in thin and narrow;superconducting films. The calculations apply to BCS weak-coupling;superconductors with isotropic gaps and transport mean-free paths much;less than the BCS coherence length. The kinetic inductance is calculated;for the response to a small alternating current when the film is;carrying a dc bias current. In the slow-experiment/fast-relaxation;limit, in which the superconducting order parameter quasistatically;follows the time-dependent current, the kinetic inductance diverges as;the bias current approaches the depairing value. However, in the;fast-experiment/slow-relaxiation limit, in which the the superconducting;order parameter remains fixed at a value corresponding to the dc bias;current, the kinetic inductance rises to a finite value at the depairing;current. We then use time-dependent GL theory to calculate the kinetic;impedance of the superfluid, which includes not only the kinetic;reactance, but also the kinetic resistance of the superfluid arising;from dissipation due to order-parameter relaxation. The kinetic;resistance is largest for angular frequencies omega obeying omega tau(s);> 1, where tau(s) is the order-parameter relaxation time, and for bias;currents close to the depairing current. We also include the normal;fluid's contribution to dissipation in deriving an expression for the;total kinetic impedance. The Appendices contain many details about the;temperature-dependent behavior of superconductors carrying current up to;the depairing value.;3;0;0;0;3;1098-0121;WOS:000311714600005;;;J;Cohn, J. L.;Boynton, P.;Trivino, J. S.;Trastoy, J.;White, B. D.;dos Santos, C. A. M.;Neumeier, J. J.;Stoichiometry, structure, and transport in the quasi-one-dimensional;metal Li0.9Mo6O17;PHYSICAL REVIEW B;86;19;195143;10.1103/PhysRevB.86.195143;NOV 30 2012;2012;A correlation between lattice parameters, oxygen composition, and the;thermoelectric and Hall coefficients is presented for single-crystal;Li0.9Mo6O17, a quasi-one-dimensional (Q1D) metallic compound. The;possibility that this compound is a compensated metal is discussed in;light of a substantial variability observed in the literature for these;transport coefficients.;1;0;0;0;1;1098-0121;WOS:000311715000002;;;J;Crepaldi, A.;Ressel, B.;Cilento, F.;Zacchigna, M.;Grazioli, C.;Berger, H.;Bugnon, Ph.;Kern, K.;Grioni, M.;Parmigiani, F.;Ultrafast photodoping and effective Fermi-Dirac distribution of the;Dirac particles in Bi2Se3;PHYSICAL REVIEW B;86;20;205133;10.1103/PhysRevB.86.205133;NOV 30 2012;2012;We exploit time- and angle-resolved photoemission spectroscopy to;determine the evolution of the out-of-equilibrium electronic structure;of the topological insulator Bi2Se3. The response of the Fermi-Dirac;distribution to ultrashort IR laser pulses has been studied by modeling;the dynamics of hot electrons after optical excitation. We disentangle a;large increase in the effective temperature (T*) from a shift of the;chemical potential (mu*), which is consequence of the ultrafast;photodoping of the conduction band. The relaxation dynamics of T* and;mu* are k independent and these two quantities uniquely define the;evolution of the excited charge population. We observe that the energy;dependence of the nonequilibrium charge population is solely determined;by the analytical form of the effective Fermi-Dirac distribution.;14;1;0;0;14;1098-0121;WOS:000311715100007;;;J;Dumlich, Heiko;Reich, Stephanie;Nanotube bundles and tube-tube orientation: A van der Waals density;functional study (vol 84, 064121, 2011);PHYSICAL REVIEW B;86;17;179905;10.1103/PhysRevB.86.179905;NOV 30 2012;2012;0;0;0;0;0;1098-0121;WOS:000311714600007;;;J;Fukutani, Keisuke;Hayashi, Hirokazu;Yakovkin, Ivan N.;Habuchi, Takafumi;Hirayama, Daisuke;Jiang, Jian;Iwasawa, Hideaki;Shimada, Kenya;Losovyj, Ya. B.;Dowben, Peter A.;Enhanced electron-phonon coupling at the Au/Mo(112) surface;PHYSICAL REVIEW B;86;20;205432;10.1103/PhysRevB.86.205432;NOV 30 2012;2012;A detailed investigation of the electronic structure and electron-phonon;coupling for a Au monolayer on the Mo(112) surface is presented. The;electronic states of bulk Mo and the (112) surface-derived states are;seen to strongly hybridize with those of the Au overlayer, resulting in;the formation of surface resonance states localized near the surface and;the interface of Au/Mo(112). The experimentally extracted self-energy;due to the electron-phonon coupling on one of the surface resonance;bands gives a good quantitative agreement with the calculations. The;strength of electron-phonon coupling for Au/Mo(112) is discussed in;terms of the mass enhancement factor and is considerably larger than for;the Mo(112) surface. Such an increase in the mass enhancement factor in;the vicinity of the Fermi level likely derives from the soft surface;phonon modes created upon Au adsorption.;2;0;0;0;2;1098-0121;WOS:000311715100011;;;J;Hamada, Ikutaro;Adsorption of water on graphene: A van der Waals density functional;study;PHYSICAL REVIEW B;86;19;195436;10.1103/PhysRevB.86.195436;NOV 30 2012;2012;The van der Waals density functional (vdW-DF) was used to investigate;the interaction of a water monomer with graphene. It was found that a;variant of vdW-DF [Hamada and Otani, Phys. Rev. B 82, 153412 (2010)];predicts geometries and energetics of water on graphene which are in;good agreement with those obtained using more elaborate random-phase;approximation and quantum Monte Carlo approaches. Interfacial electronic;structures were also analyzed in detail.;Hamada, Ikutaro/E-8040-2010;Hamada, Ikutaro/0000-0001-5112-2452;12;1;0;0;12;1098-0121;WOS:000311715000010;;;J;Hofmann, D.;Kuemmel, S.;Integer particle preference during charge transfer in Kohn-Sham theory;PHYSICAL REVIEW B;86;20;201109;10.1103/PhysRevB.86.201109;NOV 30 2012;2012;We investigate the static and dynamic charge transfer that is triggered;by external electric fields in model molecular wires. A self-interaction;correction in Kohn-Sham density functional theory leads to the desired;integer electron transfers that do not occur with standard functionals;which miss Coulomb blockade effects. Analysis of the multiplicative;exchange-correlation potential in stationary cases and during real-time;propagation shows how the local exchange-correlation potential builds up;step and reverse-step structures that enforce the integer particle;preference. The role of spin-symmetry breaking is discussed.;Kummel, Stephan/K-5634-2014;8;0;0;0;8;1098-0121;WOS:000311715100002;;;J;Illg, Christian;Meyer, Bernd;Faehnle, Manfred;Frequencies and polarization vectors of phonons: Results from force;constants which are fitted to experimental data or calculated ab initio;PHYSICAL REVIEW B;86;17;174309;10.1103/PhysRevB.86.174309;NOV 30 2012;2012;The properties of phonons may be calculated from the dynamical matrix;which is determined by force constants. Often the force constants are;obtained by fitting them to experimental phonon frequencies, e. g., for;wave vectors q on high-symmetry directions of the Brillouin zone. It is;well known that these force constants do not necessarily lead to correct;frequencies for wave vectors for nonsymmetrical q and to correct;polarization vectors. In the present paper this is demonstrated by;comparing for fcc Ni, fcc Al, and bcc Fe the frequencies and;polarization vectors calculated from fitted force constants with the;results from ab initio calculated force constants. However, for most;regions of the Brillouin zone the differences between the results;obtained from the two sets of force constants are not large.;1;0;0;0;1;1098-0121;WOS:000311714600003;;;J;Iori, Federico;Rodolakis, Fanny;Gatti, Matteo;Reining, Lucia;Upton, M.;Shvyd'ko, Y.;Rueff, Jean-Pascal;Marsi, Marino;Low-energy excitations in strongly correlated materials: A theoretical;and experimental study of the dynamic structure factor in V2O3;PHYSICAL REVIEW B;86;20;205132;10.1103/PhysRevB.86.205132;NOV 30 2012;2012;This work contains an experimental and theoretical study of the dynamic;structure factor at large momentum transfer vertical bar Q vertical bar;similar to 4 angstrom(-1) of the strongly correlated transition-metal;oxide V2O3. We focus in particular on the transitions between d states;that give rise to the spectra below 6 eV. We show that the main peak in;this energy range is mainly due to t(2g) -> e(g)(sigma) transitions, and;that it carries a signature of the phase transition between the;paramagnetic insulator and the paramagnetic metal that can already be;understood from the joint density of states calculated at the level of;the static local density approximation. Instead, in order to obtain;theoretical spectra that are overall similar to the measured ones, we;have to go beyond the static approximation and include at least crystal;local field effects. The latter turn out to be crucial in order to;eliminate a spurious peak and hence allow a safe comparison between;theory and experiment, including an analysis of the strong anisotropy of;the spectra.;CSIC-UPV/EHU, CFM/F-4867-2012; Iori, Federico/E-5372-2013; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Iori, Federico/0000-0002-7677-3435;;4;0;0;0;4;1098-0121;WOS:000311715100006;;;J;Kharitonov, Maxim;Antiferromagnetic state in bilayer graphene;PHYSICAL REVIEW B;86;19;195435;10.1103/PhysRevB.86.195435;NOV 30 2012;2012;Motivated by the recent experiment of Velasco Jr. et al. [J. Velasco Jr.;et al., Nat. Nanotechnology 7, 156 (2012)], we develop a mean-field;theory of the interaction-induced antiferromagnetic (AF) state in;bilayer graphene at charge neutrality point at arbitrary perpendicular;magnetic field B. We demonstrate that the AF state can persist at all B.;At higher B, the state continuously crosses over to the AF phase of the;nu = 0 quantum Hall ferromagnet, recently argued to be realized in the;insulating nu = 0 state. The mean-field quasiparticle gap is finite at B;= 0 and grows with increasing B, becoming quasilinear in the quantum;Hall regime, in accord with the reported behavior of the transport gap.;By adjusting the two free parameters of the model, we obtain a;simultaneous quantitative agreement between the experimental and;theoretical values of the key parameters of the gap dependence-its;zero-field value and slope at higher fields. Our findings suggest that;the insulating state observed in bilayer graphene in Ref. 1 is;antiferromagnetic (canted, once the Zeeman effect is taken into account);at all magnetic fields.;19;1;0;0;19;1098-0121;WOS:000311715000009;;;J;Klos, J. W.;Kumar, D.;Romero-Vivas, J.;Fangohr, H.;Franchin, M.;Krawczyk, M.;Barman, A.;Effect of magnetization pinning on the spectrum of spin waves in;magnonic antidot waveguides;PHYSICAL REVIEW B;86;18;184433;10.1103/PhysRevB.86.184433;NOV 30 2012;2012;We study the spin-wave spectra in magnonic antidot waveguides (MAWs) for;two limiting cases (strong and negligible) of the surface anisotropy at;the ferromagnet/air interface. The MAWs under investigation have the;form of a thin stripe of permalloy with a single row of periodically;arranged antidots in the middle. The introduction of a magnetization;pinning at the edges of the permalloy stripe and the edges of antidots;is found to modify the spin-wave spectrum. This effect is shown to be;necessary for magnonic gaps to open in the considered systems. Our study;demonstrates that the surface anisotropy can be crucial in the practical;applications of MAWs and related structures and in the interpretation of;experimental results in one-and two-dimensional magnonic crystals. We;used three different numerical methods, i.e., plane waves method (PWM),;finite difference method, and finite element method to validate the;results. We showed that PWM in the present formulation assumes pinned;magnetization, while in micromagnetic simulations special care must be;taken to introduce pinning.;Fangohr, Hans/C-6367-2008; Klos, Jaroslaw/G-9728-2012;Fangohr, Hans/0000-0001-5494-7193; Klos, Jaroslaw/0000-0002-5858-2950;13;2;0;0;13;1098-0121;WOS:000311714700002;;;J;Kolata, K.;Koester, N. S.;Chernikov, A.;Drexler, M. J.;Gatti, E.;Cecci, S.;Chrastina, D.;Isella, G.;Guzzi, M.;Chatterjee, S.;Dephasing in Ge/SiGe quantum wells measured by means of coherent;oscillations;PHYSICAL REVIEW B;86;20;201303;10.1103/PhysRevB.86.201303;NOV 30 2012;2012;We present a dephasing time analysis of the excitonic resonances in;Ge/SiGe quantum wells for various lattice temperatures by coherent;oscillation spectroscopy (COS). The results are compared to the;linewidths of the excitonic resonances determined from linear absorption;measurements. Additionally, COS is applied to different samples with;varying linewidth, identifying one sample with a dominating;homogeneously broadened 1s excitonic resonance down to 7 K.;Chatterjee, Sangam/E-3124-2012;2;0;0;0;2;1098-0121;WOS:000311715100003;;;J;Lang, Li-Jun;Chen, Shu;Majorana fermions in density-modulated p-wave superconducting wires;PHYSICAL REVIEW B;86;20;205135;10.1103/PhysRevB.86.205135;NOV 30 2012;2012;We study the p-wave superconducting wire with a periodically modulated;chemical potential and show that the Majorana edge states are robust;against the periodic modulation. We find that the critical amplitude of;modulated potential, at which the Majorana edge fermions and topological;phase disappear, strongly depends on the phase shifts. For some specific;values of the phase shift, the critical amplitude tends to infinity. The;existence of Majorana edge fermions in the open chain can be;characterized by a topological Z(2) invariant of the bulk system, which;can be applied to determine the phase boundary between the topologically;trivial and nontrivial superconducting phases. We also demonstrate the;existence of the zero-energy peak in the spectral function of the;topological superconducting phase, which is only sensitive to the open;boundary condition but robust against the disorder.;Lang, Li-Jun/C-2815-2014;Lang, Li-Jun/0000-0001-6038-8340;11;0;0;0;11;1098-0121;WOS:000311715100009;;;J;Lazicki, Amy;Dewaele, Agnes;Loubeyre, Paul;Mezouar, Mohamed;High-pressure-temperature phase diagram and the equation of state of;beryllium;PHYSICAL REVIEW B;86;17;174118;10.1103/PhysRevB.86.174118;NOV 30 2012;2012;X-ray diffraction of beryllium in a laser-heated diamond anvil cell;provides experimental insight into its behavior at high pressure and;temperature. We measure the cold compression of Be in helium and NaCl;pressure media up 192 GPa, and its thermal expansion up to 82 GPa and;2630 K. The new measurements form a P-V-T data set which is fit by the;Vinet-Debye form to establish a Be experimental equation of state. We;compare the results to several theoretical models. The crystal structure;of Be is determined up to 205 GPa and 4000 K; no evidence for the;predicted high-temperature transition to a cubic phase is found.;Finally, the maximum temperature stability of the solid phase along;isobaric heating ramps gives a lower bound for the melting curve.;5;0;0;0;5;1098-0121;WOS:000311714600002;;;J;Li, J.;Ekuma, C. E.;Vekhter, I.;Jarrell, M.;Moreno, J.;Stadler, S.;Karki, A. B.;Jin, R.;Physical properties of Ba2Mn2Sb2O single crystals;PHYSICAL REVIEW B;86;19;195142;10.1103/PhysRevB.86.195142;NOV 30 2012;2012;We report both experimental and theoretical investigations of the;physical properties of Ba2Mn2Sb2O single crystals. This material;exhibits a hexagonal structure with lattice constants a = 4.7029(15) A;and c = 19.9401(27) A, as obtained from powder x-ray diffraction;measurements, and in agreement with structural optimization through;density functional theory (DFT) calculations. The magnetic;susceptibility and specific heat show anomalies at T-N = 60 K,;consistent with antiferromagnetic ordering. However, the magnitude of;T-N is significantly smaller than the Curie-Weiss temperature (vertical;bar Theta(CW)vertical bar approximate to 560 K), suggesting a magnetic;system of reduced dimensionality. The temperature dependence of both the;in-plane and out-of-plane resistivity changes from activated at T > T-x;similar to 200 K to logarithmic at T < T-x. Correspondingly, the;magnetic susceptibility displays a bump at T-x. DFT calculations at the;DFT + U level support the experimental observation of an;antiferromagnetic ground state.;Vekhter, Ilya/M-1780-2013; Moreno, Juana/D-5882-2012;0;0;0;0;0;1098-0121;WOS:000311715000001;;;J;Mafra, D. L.;Kong, J.;Sato, K.;Saito, R.;Dresselhaus, M. S.;Araujo, P. T.;Using gate-modulated Raman scattering and electron-phonon interactions;to probe single-layer graphene: A different approach to assign phonon;combination modes;PHYSICAL REVIEW B;86;19;195434;10.1103/PhysRevB.86.195434;NOV 30 2012;2012;Gate-modulated and laser-dependent Raman spectroscopy have been widely;used to study q = 0 zone center phonon modes, their self-energy, and;their coupling to electrons in graphene systems. In this work we use;gate-modulated Raman of q not equal 0 phonons as a technique to;understand the nature of five second-order Raman combination modes;observed in the frequency range of 1700-2300 cm(-1) of single-layer;graphene (SLG). Anomalous phonon self-energy renormalization phenomena;are observed in all five combination modes within this intermediate;frequency region, which can clearly be distinguished from one another.;By combining the anomalous phonon renormalization effect with the double;resonance Raman theory, which includes both phonon dispersion relations;and angular dependence of the electron-phonon scattering matrix;elements, and by comparing it to the experimentally obtained phonon;dispersion, measured by using different laser excitation energies, we;can assign each Raman peak to the proper phonon combination mode. This;approach should also shed light on the understanding of more complex;structures such as few-layer graphene (FLG) and its stacking orders as;well as other two-dimensional (2D)-like materials.;Sato, Kentaro/B-7163-2008; Saito, Riichiro/B-1132-2008;Sato, Kentaro/0000-0001-6706-2175;;5;2;1;0;5;1098-0121;WOS:000311715000008;;;J;Mazza, Giacomo;Fabrizio, Michele;Dynamical quantum phase transitions and broken-symmetry edges in the;many-body eigenvalue spectrum;PHYSICAL REVIEW B;86;18;184303;10.1103/PhysRevB.86.184303;NOV 30 2012;2012;Many-body models undergoing a quantum phase transition to a;broken-symmetry phase that survives up to a critical temperature must;possess, in the ordered phase, symmetric as well as nonsymmetric;eigenstates. We predict, and explicitly show in the fully connected;Ising model in a transverse field, that these two classes of eigenstates;do not overlap in energy, and therefore that an energy edge exists;separating low-energy symmetry-breaking eigenstates from high-energy;symmetry-invariant ones. This energy is actually responsible, as we;show, for the dynamical phase transition displayed by this model under a;sudden large increase of the transverse field. A second situation we;consider is the opposite, where the symmetry-breaking eigenstates are;those in the high-energy sector of the spectrum, whereas the low-energy;eigenstates are symmetric. In that case too a special energy must exist;marking the boundary and leading to unexpected out-of-equilibrium;dynamical behavior. An example is the fermonic repulsive Hubbard model;Hamiltonian H. Exploiting the trivial fact that the high-energy spectrum;of H is also the low-energy one of -H, we conclude that the high-energy;eigenstates of the Hubbard model are superfluid. Simulating in a;time-dependent Gutzwiller approximation the time evolution of a;high-energy BCS-like trial wave function, we show that a small;superconducting order parameter will actually grow in spite of the;repulsive nature of the interaction.;fabrizio, michele/N-3762-2014;2;0;0;0;2;1098-0121;WOS:000311714700001;;;J;Mueller, T.;Aharonovich, I.;Wang, Z.;Yuan, X.;Castelletto, S.;Prawer, S.;Atatuere, M.;Phonon-induced dephasing of chromium color centers in diamond;PHYSICAL REVIEW B;86;19;195210;10.1103/PhysRevB.86.195210;NOV 30 2012;2012;We report on the coherence properties of single photons from;chromium-based color centers in diamond. We use field-correlation and;spectral line-shape measurements to reveal the interplay between slow;spectral wandering and fast dephasing mechanisms as a function of;temperature. The zero-phonon transition frequency and its linewidth;follow a power-law dependence on temperature, which is consistent with;direct electron-phonon coupling and phonon-modulated Coulomb coupling to;nearby impurities, which are the predominant fast dephasing mechanisms;for these centers. Further, the observed reduction in the quantum yield;for photon emission as a function of temperature suggests the opening of;additional nonradiative channels through thermal activation to;higher-energy states and indicates a near-unity quantum efficiency at 4;K.;castelletto, stefania/G-1516-2011; McKenzie, Warren/J-2137-2014;3;0;0;0;3;1098-0121;WOS:000311715000007;;;J;Murthy, Ganpathy;Shankar, R.;Hamiltonian theory of fractionally filled Chern bands;PHYSICAL REVIEW B;86;19;195146;10.1103/PhysRevB.86.195146;NOV 30 2012;2012;There is convincing numerical evidence that fractional quantum-Hall-like;ground states arise in fractionally filled Chern bands. Here, we show;that the Hamiltonian theory of composite fermions (CF) can be as useful;in describing these states as it was in describing the fractional;quantum Hall effect (FQHE) in the continuum. We are able to introduce;CFs into the fractionally filled Chern-band problem in two stages.;First, we construct an algebraically exact mapping which expresses the;electron density projected to the Chern band rho(FCB) as a sum of;Girvin-MacDonald-Platzman density operators rho(GMP) that obey the;magnetic translation algebra. Next, following our Hamiltonian treatment;of the FQH problem, we rewrite the operators rho(GMP) in terms of CF;variables which reproduce the same algebra. This naturally produces a;unique Hartree-Fock ground state for the CFs, which can be used as a;springboard for computing gaps, response functions,;temperature-dependent phenomena, and the influence of disorder. We give;two concrete examples, one of which has no analog in the continuum FQHE;with nu = 1/5 and sigma(xy) = 2/5. Our approach can be easily extended;to fractionally filled, strongly interacting two-dimensional;time-reversal-invariant topological insulators.;15;0;0;0;15;1098-0121;WOS:000311715000005;;;J;Ovsyannikov, Sergey V.;Morozova, Natalia V.;Karkin, Alexander E.;Shchennikov, Vladimir V.;High-pressure cycling of hematite alpha-Fe2O3: Nanostructuring, in situ;electronic transport, and possible charge disproportionation;PHYSICAL REVIEW B;86;20;205131;10.1103/PhysRevB.86.205131;NOV 30 2012;2012;We studied electronic transport properties of hematite (alpha-Fe2O3) at;room temperature under cycling of high pressure up to similar to 22 GPa.;The original samples and those recovered after high-pressure experiments;were examined by x-ray diffraction and Raman and optical absorption;spectroscopy. At ambient pressure the original samples were also;characterized by temperature measurements of electrical and;galvanomagnetic properties. Upon compression, the original single;crystals underwent a sluggish structural deconfinement starting above 5;GPa into a nanometric state. Above 5-7 GPa, the nanostructured hematite;showed a reversible transition to a state with enhanced electrical;conductivity and moderate values of thermoelectric power (Seebeck;effect) of about -150 mu V/K. This electronic phase corresponds to;neither conventional trivalent oxidation state of the iron ions in;hematite nor metallic conductivity. Analysis of the electronic transport;data in the frameworks of two models, of polaron hopping, and of;intrinsic semiconductor conductivity, revealed a change from the;electron conductivity to two-band electrical conductivity and suggested;that the observed enhancement of the electrical properties in;nanocrystalline alpha-Fe2O3 above 5-7 GPa is related to the;mixed-valence state of the iron ions. Since alpha-Fe2O3 is believed to;undergo a "spin-flop" (Morin) transition near 2-5 GPa at room;temperature, we discuss potential contributions of magnetoelastic and;other effects to the observed high-pressure properties of hematite.;Ovsyannikov, Sergey/J-7802-2012; Morozova, Natalia/J-3568-2013; Karkin, Alexander/J-6712-2013; Shchennikov, Vladimir/J-8533-2013;Morozova, Natalia/0000-0002-2377-1372; Karkin,;Alexander/0000-0003-0464-4762; Shchennikov, Vladimir/0000-0003-2887-1652;4;0;0;0;4;1098-0121;WOS:000311715100005;;;J;Pielawa, Susanne;Berg, Erez;Sachdev, Subir;Frustrated quantum Ising spins simulated by spinless bosons in a tilted;lattice: From a quantum liquid to antiferromagnetic order;PHYSICAL REVIEW B;86;18;184435;10.1103/PhysRevB.86.184435;NOV 30 2012;2012;We study spinless bosons in a decorated square lattice with a;near-diagonal tilt. The resonant subspace of the tilted Mott insulator;is described by an effective Hamiltonian of frustrated quantum Ising;spins on a nonbipartite lattice. This generalizes an earlier proposal;for the unfrustrated quantum Ising model in one dimension which was;realized in a recent experiment on ultracold Rb-87 atoms in an optical;lattice. Very close to diagonal tilt, we find a quantum liquid state;which is continuously connected to the paramagnet. Frustration can be;reduced by increasing the tilt angle away from the diagonal, and the;system undergoes a transition to an antiferromagnetically ordered state.;Using quantum Monte Carlo simulations and exact diagonalization, we find;that for realistic system sizes the antiferromagnetic order appears to;be quasi-one-dimensional, however, in the thermodynamic limit the order;is two-dimensional.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;1;0;0;0;1;1098-0121;WOS:000311714700004;;;J;Popov, V. V.;Polischuk, O. V.;Davoyan, A. R.;Ryzhii, V.;Otsuji, T.;Shur, M. S.;Plasmonic terahertz lasing in an array of graphene nanocavities;PHYSICAL REVIEW B;86;19;195437;10.1103/PhysRevB.86.195437;NOV 30 2012;2012;We propose a novel concept of terahertz lasing based on stimulated;generation of plasmons in a planar array of graphene resonant;micro/nanocavities strongly coupled to terahertz radiation. Due to the;strong plasmon confinement and superradiant nature of terahertz emission;by the array of plasmonic nanocavities, the amplification of terahertz;waves is enhanced by many orders of magnitude at the plasmon resonance;frequencies. We show that the lasing regime is ensured by the balance;between the plasmon gain and plasmon radiative damping.;Davoyan, Artur/K-8567-2013;Davoyan, Artur/0000-0002-4662-1158;15;0;0;0;15;1098-0121;WOS:000311715000011;;;J;Romanov, Sergei G.;Vogel, Nicolas;Bley, Karina;Landfester, Katharina;Weiss, Clemens K.;Orlov, Sergej;Korovin, Alexander V.;Chuiko, Gennady P.;Regensburger, Alois;Romanova, Alexandra S.;Kriesch, Arian;Peschel, Ulf;Probing guided modes in a monolayer colloidal crystal on a flat metal;film;PHYSICAL REVIEW B;86;19;195145;10.1103/PhysRevB.86.195145;NOV 30 2012;2012;Two-dimensional slab hybrid metal-dielectric photonic crystals, which;are prepared by assembling polymer colloidal spheres into closely packed;monolayers of hexagonal symmetry on a gold-coated glass substrate, show;an improved confinement of light compared with a colloidal monolayer on;a glass substrate. We demonstrated that the optical response of such;hybrid crystals consists of diffractively coupled waveguiding modes,;Fabry-Perot resonances, and Mie resonances. Correspondingly, two major;mechanisms, namely, band transport and hopping of localized excitations,;participate in the in-plane light transport in such hybrid crystals.;Weiss, Clemens/C-9932-2009; Peschel, Ulf/C-3356-2013; Romanov, Sergei/H-6868-2013; Kriesch, Arian/A-7337-2011;Weiss, Clemens/0000-0001-8559-0385; Romanov, Sergei/0000-0003-0546-9505;;Kriesch, Arian/0000-0002-8347-0344;6;1;0;0;6;1098-0121;WOS:000311715000004;;;J;Schoop, Leslie;Muechler, Lukas;Schmitt, Jennifer;Ksenofontov, Vadim;Medvedev, Sergey;Nuss, Juergen;Casper, Frederick;Jansen, Martin;Cava, R. J.;Felser, Claudia;Effect of pressure on superconductivity in NaAlSi;PHYSICAL REVIEW B;86;17;174522;10.1103/PhysRevB.86.174522;NOV 30 2012;2012;The ternary superconductor NaAlSi, isostructural with LiFeAs, the "111";iron pnictide superconductor, is investigated under pressure. The;structure remains stable up to 15 GPa. Resistivity and susceptibility;measurements show an increase of T-c up to 2 GPa, followed by a decrease;until superconductivity disappears at 4.8 GPa. Band structure;calculations show that pressure should have a negligible effect on the;electronic structure and the Fermi surface and thus the disappearance of;superconductivity under pressure must have a different origin. We;compare the electronic structure of NaAlSi under pressure with that of;nonsuperconducting isostructural NaAlGe.;Felser, Claudia/A-5779-2009; Casper, Frederick/A-5782-2009; Nuss, Juergen/G-2711-2010; Muchler, Lukas/A-4628-2013; Schoop, Leslie/A-4627-2013;Nuss, Juergen/0000-0002-0679-0184; Schoop, Leslie/0000-0003-3459-4241;1;0;0;0;1;1098-0121;WOS:000311714600006;;;J;Schwier, E. F.;Scherwitzl, R.;Vydrova, Z.;Garcia-Fernandez, M.;Gibert, M.;Zubko, P.;Garnier, M. G.;Triscone, J. -M.;Aebi, P.;Unusual temperature dependence of the spectral weight near the Fermi;level of NdNiO3 thin films;PHYSICAL REVIEW B;86;19;195147;10.1103/PhysRevB.86.195147;NOV 30 2012;2012;We investigate the behavior of the spectral weight near the Fermi level;of NdNiO3 thin films as a function of temperature across the;metal-to-insulator transition (MIT) by means of ultraviolet;photoelectron spectroscopy. The spectral weight was found to exhibit;thermal hysteresis, similar to that of the dc conductivity. A detailed;analysis of the temperature dependence reveals two distinct regimes of;spectral loss close to the Fermi level. The temperature evolution of one;regime is found to be independent of the MIT.;Garcia-Fernandez, Mirian/B-6018-2013; Zubko, Pavlo/B-5496-2009;Zubko, Pavlo/0000-0002-7330-3163;2;0;0;0;2;1098-0121;WOS:000311715000006;;;J;Sen, Arnab;Damle, Kedar;Moessner, R.;Vacancy-induced spin textures and their interactions in a classical spin;liquid;PHYSICAL REVIEW B;86;20;205134;10.1103/PhysRevB.86.205134;NOV 30 2012;2012;Motivated by experiments on the archetypal frustrated magnet;SrCr9pGa12-9pO19 (SCGO), we study the classical Heisenberg model on the;pyrochlore slab (kagome bilayer) lattice with site dilution x = 1 - p.;This allows us to address generic aspects of the physics of nonmagnetic;vacancies in a classical spin liquid. We explicitly demonstrate that the;pure (x = 0) system remains a spin liquid down to the lowest;temperatures, with an unusual nonmonotonic temperature dependence of the;susceptibility, which even turns diamagnetic for the apical spins;between the two kagome layers. For x > 0 but small, the low-temperature;magnetic response of the system is most naturally described in terms of;the properties of spatially extended spin textures that cloak an;"orphan" S = 3/2 Cr3+ spin in direct proximity to a pair of missing;sites belonging to the same triangular simplex. In the T -> 0 limit,;these orphan-texture complexes each carry a net magnetization that is;exactly half the magnetic moment of an individual spin of the undiluted;system. Furthermore, we demonstrate that they interact via an entropic;temperature-dependent pairwise exchange interaction J(eff) (T,(r) over;right arrow) similar to T J ((r) over right arrow root T) that has a;logarithmic form at short distances and decays exponentially beyond a;thermal correlation length xi(T) similar to 1/root T. The sign of J(eff);depends on whether the two orphan spins belong to the same kagome layer;or not. We provide a detailed analytical account of these properties;using an effective field theory approach specifically tailored for the;problem at hand. These results are in quantitative agreement with;large-scale Monte Carlo numerics.;3;1;0;0;3;1098-0121;WOS:000311715100008;;;J;Solanki, Ravindra Singh;Mishra, S. K.;Senyshyn, Anatoliy;Ishii, I.;Moriyoshi, Chikako;Suzuki, Takashi;Kuroiwa, Yoshihiro;Pandey, Dhananjai;Antiferrodistortive phase transition in pseudorhombohedral;(Pb0.94Sr0.06)( Zr0.550Ti0.450)O-3: A combined synchrotron x-ray and;neutron powder diffraction study;PHYSICAL REVIEW B;86;17;174117;10.1103/PhysRevB.86.174117;NOV 30 2012;2012;The controversies about the structure of the true ground state of;pseudorhombohedral compositions of Pb(ZrxTi1-x)O-3 (PZT) are addressed;using a 6% Sr2+ substituted sample with x = 0.550. Sound velocity;measurements reveal a phase transition at T-c similar to 279 K. The;temperature dependence of full width at half maximum of (h00)(pc) peaks;and the unit cell volume also show anomalies around 279 K even though;there is no indication of any change of space group in the synchrotron;x-ray powder diffraction (SXRD) patterns. The neutron powder diffraction;patterns reveal appearance of superlattice peaks below T-c similar to;279 K, confirming the existence of an antiferrodistortive phase;transition. The Rietveld analysis of the room-temperature and;low-temperature SXRD data below T-c shows that the structure corresponds;to single monoclinic phase in the Cm space group while the analysis of;neutron powder diffraction data reveals that the structure of the;ground-state phase below T-c corresponds to the Cc space group. Our;analysis shows that the structural models for the ground-state phase;based on the R3c space group with or without the coexistence of the;room-temperature monoclinic phase in the Cm space group can be rejected.;SOLANKI, RAVINDRA /H-7221-2013; Senyshyn, Anatoliy/C-8267-2014;Senyshyn, Anatoliy/0000-0002-1473-8992;3;0;0;0;3;1098-0121;WOS:000311714600001;;;J;Steinke, N. -J.;Moore, T. A.;Mansell, R.;Bland, J. A. C.;Barnes, C. H. W.;Nonuniversal dynamic magnetization reversal in the Barkhausen-dominated;and mesofrequency regimes;PHYSICAL REVIEW B;86;18;184434;10.1103/PhysRevB.86.184434;NOV 30 2012;2012;Dynamic magnetization reversal in the mesofrequency range is studied by;ac magneto-optical Kerr effect (ac-MOKE) and ac anisotropic;magnetoresistance (ac-AMR) magnetometry in a series of epitaxial and;polycrystalline thin magnetic films. The dynamic coercive field was;found to scale as a power law with scaling exponents <= 1/2 depending on;the ferromagnetic material. In addition, there is a low sweep rate;regime in which the dynamic coercivity reaches a minimum. These findings;are explained in the context of reversal proceeding by motion of a few;domain walls (similar to 1). At dc and low field sweep rates the;reversal proceeds between local pinning sites via Barkhausen avalanches;and the overall reversal speed is strongly dependent on the field sweep;rate. At higher field sweep rates a continuous motion regime is entered;in which the reversal velocity depends linearly on the applied field;sweep rate and only an average pinning force is experienced by the wall.;The fit of the dynamic coercivity vs applied field sweep rate allows the;determination of the average nonlocal pinning field. The nonuniversal;scaling exponent can be explained using recently developed models and;introducing a field rate-dependent number of active domain walls.;Mansell, Rhodri/A-1450-2013;2;0;0;0;2;1098-0121;WOS:000311714700003;;;J;Stoffel, M.;Fagot-Revurat, Y.;Tejeda, A.;Kierren, B.;Nicolaou, A.;Le Fevre, P.;Bertran, F.;Taleb-Ibrahimi, A.;Malterre, D.;Electron-phonon coupling on strained Ge/Si(111)-(5x5) surfaces;PHYSICAL REVIEW B;86;19;195438;10.1103/PhysRevB.86.195438;NOV 30 2012;2012;We investigate the structural and electronic properties of strained;Ge/Si(111)-(5 x 5) surfaces by means of scanning tunneling microscopy;and high-resolution angle-resolved photoemission spectroscopy. The;homogeneous (5 x 5) reconstructed overlayers are characterized by three;electronic surface states, similar to the Si(111)-(7 x 7) surface. The;dispersion of the dangling bond related surface state exhibits the same;periodicity as that of the (5 x 5) reconstruction. Moreover, a careful;analysis of the shape and width of this surface state provides striking;evidence of electron-phonon coupling at low temperatures. By considering;the spectral function within a simple Debye model, we determine both the;Debye energy and the electron-phonon coupling strength. The latter value;is further confirmed by analyzing the temperature-dependent phonon;broadening of the dangling bond related surface state linewidth.;BERTRAN, Francois/B-7515-2008; Tejeda, Antonio/C-4711-2014;BERTRAN, Francois/0000-0002-2416-0514; Tejeda,;Antonio/0000-0003-0125-4603;1;0;0;0;1;1098-0121;WOS:000311715000012;;;J;Turek, I.;Kudrnovsky, J.;Carva, K.;Magnetic anisotropy energy of disordered tetragonal Fe-Co systems from;ab initio alloy theory;PHYSICAL REVIEW B;86;17;174430;10.1103/PhysRevB.86.174430;NOV 30 2012;2012;We present results of systematic fully relativistic first-principles;calculations of the uniaxial magnetic anisotropy energy (MAE) of a;disordered and partially ordered tetragonal Fe-Co alloy using the;coherent potential approximation (CPA). This alloy has recently become a;promising system for thin ferromagnetic films with a perpendicular;magnetic anisotropy. We find that existing theoretical approaches to;homogeneous random bulk Fe-Co alloys, based on a simple virtual crystal;approximation (VCA), overestimate the maximum MAE values obtained in the;CPA by a factor of 4. This pronounced difference is ascribed to the;strong disorder in the minority spin channel of real alloys, which is;neglected in the VCA and which leads to a broadening of the d-like;eigenstates at the Fermi energy and to the reduction of the MAE. The;ordered Fe-Co alloys with a maximum L1(0)-like atomic long-range order;can exhibit high values of the MAE, which, however, get dramatically;reduced by small perturbations of the perfect order.;Carva, Karel/A-3703-2008; Turek, Ilja/G-5553-2014; KUDRNOVSKY, Josef/G-5581-2014;KUDRNOVSKY, Josef/0000-0002-9968-6748;10;0;0;0;10;1098-0121;WOS:000311714600004;;;J;Uppstu, Andreas;Harju, Ari;High-field magnetoresistance revealing scattering mechanisms in graphene;PHYSICAL REVIEW B;86;20;201409;10.1103/PhysRevB.86.201409;NOV 30 2012;2012;We show that the type of charge carrier scattering significantly affects;the high-field magnetoresistance of graphene nanoribbons. This effect;has the potential to be used in identifying the scattering mechanisms in;graphene. The results also provide an explanation for the experimentally;found, intriguing differences in the behavior of the magnetoresistance;of graphene Hall bars placed on different substrates. Additionally, our;simulations indicate that the peaks in the longitudinal resistance tend;to become pinned to fractionally quantized values, as different;transport modes have very different scattering properties.;Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;1;0;0;0;1;1098-0121;WOS:000311715100004;;;J;White, Alexander J.;Sukharev, Maxim;Galperin, Michael;Molecular nanoplasmonics: Self-consistent electrodynamics in;current-carrying junctions;PHYSICAL REVIEW B;86;20;205324;10.1103/PhysRevB.86.205324;NOV 30 2012;2012;We consider a biased molecular junction subjected to an external;time-dependent electromagnetic field. We discuss local field formation;due to both surface plasmon-polariton excitations in the contacts and;the molecular response. Employing realistic parameters we demonstrate;that such self-consistent treatment is crucial for the proper;description of the junction transport characteristics.;White, Alexander/D-8754-2014;White, Alexander/0000-0002-7771-3899;3;0;0;0;3;1098-0121;WOS:000311715100010;;;J;Wierschem, Keola;Kato, Yasuyuki;Nishida, Yusuke;Batista, Cristian D.;Sengupta, Pinaki;Magnetic and nematic orderings in spin-1 antiferromagnets with;single-ion anisotropy;PHYSICAL REVIEW B;86;20;201108;10.1103/PhysRevB.86.201108;NOV 30 2012;2012;We study a spin-1 Heisenberg model with exchange interaction J, uniaxial;single-ion exchange anisotropy D, and Zeeman coupling to a magnetic;field B parallel to the symmetry axis. We compute the (D/J, B/J) quantum;phase diagram for square and simple cubic lattices by combining;analytical and quantum Monte Carlo approaches, and find a transition;between XY antiferromagnetic and ferronematic phases that spontaneously;break the U(1) symmetry of the model. In the language of bosonic gases,;this is a transition between a Bose-Einstein condensate (BEC) of single;bosons and a BEC of pairs. Our work opens up new avenues for measuring;this transition in real magnets.;8;0;0;0;8;1098-0121;WOS:000311715100001;;;J;Wu, Chien-Te;Valls, Oriol T.;Halterman, Klaus;Proximity effects in conical-ferromagnet/superconductor bilayers;PHYSICAL REVIEW B;86;18;184517;10.1103/PhysRevB.86.184517;NOV 30 2012;2012;We present a study of various aspects of proximity effects in F/S;(ferromagnet/superconductor) bilayers, where F has a spiral magnetic;texture such as that found in holmium, erbium, and other materials, and;S is a conventional s-wave superconductor. We numerically solve the;Bogoliubov-de Gennes (BdG) equations self-consistently and use the;solutions to compute physical quantities relevant to the proximity;effects in these bilayers. We obtain the relation between the;superconducting transition temperature T-c and the thicknesses d(F) of;the magnetic layer by solving the linearized BdG equations. We find that;the T-c (d(F)) curves include multiple oscillations. Moreover, the;system may be reentrant not only with d(F), as is the case when the;magnet is uniform, but also with temperature T : the superconductivity;disappears in certain ranges of d(F) or T. The T reentrance reported;here occurs when d(F) is larger than the spatial period of the conical;exchange field. We compute the condensation free energies and entropies;from the full BdG equations and find the results are in agreement with;T-c values obtained by linearization. The inhomogeneous nature of the;magnet makes it possible for all odd triplet pairing components to be;induced. We have investigated their properties and found that, as;compared to the singlet amplitude, both the m = 0 and +/- 1 triplet;components exhibit long-range penetration. For nanoscale bilayers, the;proximity lengths for both layers are also obtained. These lengths;oscillate with d(F) and they are found to be long range on both sides.;These results are shown to be consistent with recent experiments. We;also calculate the reverse proximity effect described by the;three-dimensional local magnetization, and the local density of states,;which reveals important energy-resolved signatures associated with the;proximity effects.;6;0;0;0;6;1098-0121;WOS:000311714700005;;;J;Altarelli, M.;Kurta, R. P.;Vartanyants, I. A.;X-ray cross-correlation analysis and local symmetries of disordered;systems: General theory (vol 82, 104207, 2010);PHYSICAL REVIEW B;86;17;179904;10.1103/PhysRevB.86.179904;NOV 29 2012;2012;1;0;0;0;1;1098-0121;WOS:000311693600006;;;J;Beheshtian, J.;Sadeghi, A.;Neek-Amal, M.;Michel, K. H.;Peeters, F. M.;Induced polarization and electronic properties of carbon-doped boron;nitride nanoribbons;PHYSICAL REVIEW B;86;19;195433;10.1103/PhysRevB.86.195433;NOV 29 2012;2012;The electronic properties of boron nitride nanoribbons (BNNRs) doped;with a line of carbon atoms are investigated using density functional;calculations. By replacing a line of alternating B and N atoms with;carbons, three different configurations are possible depending on the;type of the atoms which bond to the carbons. We found very different;electronic properties for these configurations: (i) the NCB arrangement;is strongly polarized with a large dipole moment having an unexpected;direction, (ii) the BCB and NCN arrangements are nonpolar with zero;dipole moment, (iii) the doping by a carbon line reduces the band gap;regardless of the local arrangement of the borons and the nitrogens;around the carbon line, and (iv) the polarization and energy gap of the;carbon-doped BNNRs can be tuned by an electric field applied parallel to;the carbon line. Similar effects were found when either an armchair or;zigzag line of carbon was introduced.;Sadeghi, Ali/D-1554-2013;8;0;0;0;8;1098-0121;WOS:000311694200006;;;J;Chi, Hang;Kim, Hyoungchul;Thomas, John C.;Su, Xianli;Stackhouse, Stephen;Kaviany, Massoud;Van der Ven, Anton;Tang, Xinfeng;Uher, Ctirad;Configuring pnicogen rings in skutterudites for low phonon conductivity;PHYSICAL REVIEW B;86;19;195209;10.1103/PhysRevB.86.195209;NOV 29 2012;2012;Dominant heat-carrying modes in skutterudites are associated with;vibrations of the pnicogen rings. Apart from filling the structural;cages with foreign species, disrupting the pnicogen ring structure by;substitutional alloying should be an effective approach to reduce;thermal conductivity. In this paper we explore alloying configurations;of pnicogen rings (Sb rings in the case of CoSb3) that yield;particularly low values of the thermal conductivity. We find that IV-VI;double substitution (replacing two Sb atoms with one atom each from the;column IV and column VI elements to achieve an average charge of two Sb;atoms) is a very effective approach. Our ab initio calculations, in;combination with a cluster expansion, have allowed us to identify stable;alloy configurations on the Sb rings. Subsequent molecular and lattice;dynamics simulations on low energy configurations establish the range of;atomic displacement parameters and values of the thermal conductivity.;Theoretical results are in good agreement with our experimental thermal;conductivity values. Combining both approaches of compensated double;substitution and filling of structural cages should be an effective way;of improving the thermoelectric figure of merit of skutterudites.;Su, Xianli/A-9685-2012; Chi, Hang/F-1537-2011; Thomas, John/A-2764-2009; Kim, Hyoungchul/F-2557-2014;Chi, Hang/0000-0002-1299-1150; Thomas, John/0000-0002-3162-0152; Kim,;Hyoungchul/0000-0003-3109-660X;8;0;0;0;8;1098-0121;WOS:000311694200003;;;J;Fortmann, C.;Niemann, C.;Glenzer, S. H.;Theory of x-ray scattering in high-pressure electrides;PHYSICAL REVIEW B;86;17;174116;10.1103/PhysRevB.86.174116;NOV 29 2012;2012;We report on a theoretical model for the calculation of x-ray scattering;from high-pressure electrides. By treating interstitial electrons as;effective anions forming a sublattice within the crystal, we explicitly;account for Bragg reflections from the sublattice as well as for;scattering interferences between the ion lattice and the anion;sublattice. The additional reflections and interferences lead to;significant modifications of the static structure factor as compared to;the pure lattices. Our results are important for accurate calculations;of material properties in the high-pressure phase and allow for direct;experimental verification of electride phases in matter at ultrahigh;pressures through angle-resolved x-ray scattering.;2;0;0;0;2;1098-0121;WOS:000311693600001;;;J;Guclu, Caner;Campione, Salvatore;Capolino, Filippo;Hyperbolic metamaterial as super absorber for scattered fields generated;at its surface;PHYSICAL REVIEW B;86;20;205130;10.1103/PhysRevB.86.205130;NOV 29 2012;2012;We show that hyperbolic metamaterials (HMs) that exhibit hyperbolic;wave-vector dispersion diagrams possess two important features related;to super absorption: The total power scattered by a nanosphere is (i);greatly enhanced when placed at the HM surface, compared to other;material surfaces, and (ii) almost totally directed into the HM. We show;that these two features are peculiar of HM interfaces, and we support;them using a spectral theory study of transverse-electric and magnetic;waves scattered by a subwavelength nanosphere. We analyze the;nanosphere's scattered power absorbed by various substrate;configurations. We also consider various nanosphere materials.;22;0;0;0;22;1098-0121;WOS:000311694300002;;;J;Hebbache, M.;Entanglement of electron spins and geometric phases in the diamond color;center coupled to the P1 center;PHYSICAL REVIEW B;86;19;195316;10.1103/PhysRevB.86.195316;NOV 29 2012;2012;Impurity spins in semiconductors are potential quantum bits.;Entanglement and topological phases are key resources in quantum;computation. We prove that the coupled electron spins carried by a;diamond nitrogen-vacancy color center (NV-) and a single substitutional;nitrogen impurity (P1 center) are entangled in the immediate vicinity of;the level anticrossing that appears in the Zeeman energy diagram at;about 500 G. We also determine the Aharonov-Anandan, Berry, and marginal;geometric phases that can be accumulated by the state vectors of this;spin system when it is magnetically transported around a closed path. At;the resonance where the gap between two energy levels is minimum, the;geometric phases undergo discontinuities, and the entanglement of the;two electron spins is maximal.;2;0;0;0;2;1098-0121;WOS:000311694200004;;;J;Kerdsongpanya, Sit;Alling, Bjorn;Eklund, Per;Effect of point defects on the electronic density of states of ScN;studied by first-principles calculations and implications for;thermoelectric properties;PHYSICAL REVIEW B;86;19;195140;10.1103/PhysRevB.86.195140;NOV 29 2012;2012;We have investigated the effect of defects and impurities on the;electronic density of states of scandium nitride using first-principles;calculations with the generalized gradient approximation and hybrid;functionals for the exchange correlation energy. Our results show that;Sc and N vacancies can introduce asymmetric peaks in the density of;states close to the Fermi level. We also find that the N vacancy states;are sensitive to total electron concentration of the system due to their;possibility for spin polarization. Substitutional point defects shift;the Fermi level in the electronic band according to their valence but do;not introduce sharp features. The energetics and electronic structure of;defect pairs are also studied. By using hybrid functional calculations,;a correct description of the band gap of scandium nitride is obtained.;Our results envisage ways for improving the thermoelectric figure of;merit of ScN by electronic structure engineering through stoichiometry;tuning and doping.;Eklund, Per/B-7677-2011; Alling, Bjorn/I-3193-2012;Eklund, Per/0000-0003-1785-0864; Alling, Bjorn/0000-0001-5863-5605;8;0;0;0;8;1098-0121;WOS:000311694200001;;;J;Kim, Jiseok;Fischetti, Massimo V.;Aboud, Shela;Structural, electronic, and transport properties of silicane nanoribbons;PHYSICAL REVIEW B;86;20;205323;10.1103/PhysRevB.86.205323;NOV 29 2012;2012;Silicane ribbons do not suffer from aromatic dependence of the band gap;making them a more promising candidate for near-term nanoelectronic;application compared to armchair graphene nanoribbons. The structural,;electronic, and transport properties of free-standing sp(3)-hybridized;armchair- and zigzag-edge silicane nanoribbons have been investigated;using ab initio and nonlocal empirical pseudopotential calculations.;Under ambient conditions, two-dimensional silicane sheets will;spontaneously break into stable one-dimensional ribbons similar to;density functional theory studies of graphene ribbons. The calculated;low-field electron mobility and ballistic conductance show a strong edge;dependence, due to differences in the effective mass and momentum;relaxation rates along the two transport directions. The mobility in;zigzag-edge ribbons is found to be approximately twenty times higher;than in armchair-edge ribbons.;7;0;0;0;7;1098-0121;WOS:000311694300004;;;J;Kim, Kyou-Hyun;Payne, David A.;Zuo, Jian-Min;Symmetry of piezoelectric (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (x=0.31);single crystal at different length scales in the morphotropic phase;boundary region;PHYSICAL REVIEW B;86;18;184113;10.1103/PhysRevB.86.184113;NOV 29 2012;2012;We use probes of three different length scales to examine symmetry of (1;- x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) single crystals in the;morphotropic phase boundary (MPB) region at composition x = 0.31;(PMN-31% PT). On the macroscopic scale, x-ray diffraction (XRD) shows a;mixture of strong and weak diffraction peaks of different widths. The;closest match to XRD peak data is made with monoclinic Pm (M-C);symmetry. On the local scale of a few nanometers, convergent beam;electron diffraction (CBED) studies, with a 1.6-nm electron probe,;reveal no obvious symmetry. These CBED experimental patterns can be;approximately matched with simulations based on monoclinic symmetry,;which suggests locally distorted monoclinic structure. A monoclinic Cm;(M-A or M-B)-like symmetry could also be obtained from certain regions;of the crystal by using a larger electron probe size of several tens of;nanometers in diameter. Thus the monoclinic symmetry of single crystal;PMN-31% PT is developed only in parts of the crystal by averaging over;locally distorted structure on the scale of few tens of nanometers. The;macroscopic symmetry observed by XRD is a result of averaging from the;local structure in PMN-31% PT single crystal. The lack of local symmetry;at a few nanometers scale suggests that the polarization switching;results from a change in local displacements, which are not restricted;to specific symmetry planes or directions.;2;0;0;0;2;1098-0121;WOS:000311693900002;;;J;Kossacki, P.;Faugeras, C.;Kuehne, M.;Orlita, M.;Mahmood, A.;Dujardin, E.;Nair, R. R.;Geim, A. K.;Potemski, M.;Circular dichroism of magnetophonon resonance in doped graphene;PHYSICAL REVIEW B;86;20;205431;10.1103/PhysRevB.86.205431;NOV 29 2012;2012;The polarization-resolved Raman-scattering response due to E-2g phonons;in monolayer graphene has been investigated in magnetic fields up to 29;T. The hybridization of the E-2g phonon is only observed with the;fundamental inter-Landau-level excitation (involving the n = 0 Landau;level) and in just one of the two configurations of the circularly;cross-polarized excitation and scattered light. This polarization;anisotropy of the magnetophonon resonance is shown to be inherent to;relatively strongly doped graphene samples with carrier concentrations;typical for graphene deposited on Si/SiO2 substrates.;Dujardin, Erik/A-2748-2010; Raveendran Nair, Rahul/G-5839-2010; Orlita, Milan/H-1130-2014;Dujardin, Erik/0000-0001-7242-9250;;3;0;0;0;3;1098-0121;WOS:000311694300005;;;J;Kostylev, M.;Stashkevich, A. A.;Roussigne, Y.;Grigoryeva, N. A.;Mistonov, A. A.;Menzel, D.;Sapoletova, N. A.;Napolskii, K. S.;Eliseev, A. A.;Lukashin, A. V.;Grigoriev, S. V.;Samarin, S. N.;Microwave properties of Ni-based ferromagnetic inverse opals;PHYSICAL REVIEW B;86;18;184431;10.1103/PhysRevB.86.184431;NOV 29 2012;2012;Investigations of microwave properties of Ni-based inverse ferromagnetic;opal-like film with the [111] axis of the fcc structure along the normal;direction to the film have been carried out in the 2-18 GHz frequency;band. We observed multiple spin wave resonances for the magnetic field;applied perpendicular to the film, i.e., along the [111] axis of this;artificial crystal. For the field applied in the film plane, a broad;band of microwave absorption is observed, which does not contain a fine;structure. The field ranges of the responses observed are quite;different for these two magnetization directions. This suggests a;collective magnetic ground state or shape anisotropy and collective;microwave dynamics for this foam-like material. This result is in;agreement with SQUID measurements of hysteresis loops for the material.;Two different models for this collective behavior are suggested that;satisfactorily explain the major experimental results.;Lukashin, Alexey/F-6746-2013; Mistonov, Alexander/H-2098-2013; Grigoryeva, Natalia/K-2253-2013; Kostylev, Mikhail/H-5214-2014;Mistonov, Alexander/0000-0003-0138-3579; Grigoryeva,;Natalia/0000-0002-9910-6192;;1;0;0;0;1;1098-0121;WOS:000311693900004;;;J;Kvashnin, Y. O.;Khmelevskyi, S.;Kudrnovsky, J.;Yaresko, A. N.;Genovese, L.;Bruno, P.;Noncollinear magnetic ordering in compressed FePd3 ordered alloy: A;first principles study;PHYSICAL REVIEW B;86;17;174429;10.1103/PhysRevB.86.174429;NOV 29 2012;2012;By means of ab initio calculations based on the density functional;theory we investigated the magnetic phase diagram of ordered FePd3 alloy;as a function of external pressure. Considering several magnetic;configurations we concluded that the system under pressure has a;tendency toward noncollinear spin alignment. Analysis of the Heisenberg;exchange parameters J(ij) revealed strong dependence of iron-iron;magnetic couplings on polarization of Pd atoms. To take into account;that effect we built an extended Heisenberg model with higher order;(biquadratic) terms. Minimizing the energy of this Hamiltonian, fully;parametrized using the results of ab initio calculations, we found a;candidate for a ground state of compressed FePd3, which can be seen as;two interpenetrating "triple-Q" phases.;Genovese, Luigi/C-5937-2011; Bruno, Patrick/C-9159-2009; KUDRNOVSKY, Josef/G-5581-2014;Genovese, Luigi/0000-0003-1747-0247; Bruno, Patrick/0000-0002-2574-1943;;KUDRNOVSKY, Josef/0000-0002-9968-6748;1;0;0;0;1;1098-0121;WOS:000311693600004;;;J;Li, Wu;Lindsay, L.;Broido, D. A.;Stewart, Derek A.;Mingo, Natalio;Thermal conductivity of bulk and nanowire Mg2SixSn1-x alloys from first;principles;PHYSICAL REVIEW B;86;17;174307;10.1103/PhysRevB.86.174307;NOV 29 2012;2012;The lattice thermal conductivity (kappa) of the thermoelectric;materials, Mg2Si, Mg2Sn, and their alloys, are calculated for bulk and;nanowires, without adjustable parameters. We find good agreement with;bulk experimental results. For large nanowire diameters, size effects;are stronger for the alloy than for the pure compounds. For example, in;200 nm diameter nanowires kappa is lower than its bulk value by 30%,;20%, and 20% for Mg2Si0.6Sn0.4, Mg2Si, and Mg2Sn, respectively. For;nanowires less than 20 nm thick, the relative decrease surpasses 50%,;and it becomes larger in the pure compounds than in the alloy. At room;temperature, kappa of Mg2SixSn1-x is less sensitive to nanostructuring;size effects than SixGe1-x, but more sensitive than PbTexSe1-x. This;suggests that further improvement of Mg2SixSn1-x as a nontoxic;thermoelectric may be possible.;Lindsay, Lucas/C-9221-2012; Stewart, Derek/B-6115-2008;25;1;0;0;25;1098-0121;WOS:000311693600002;;;J;Niklasson, Anders M. N.;Cawkwell, Marc J.;Fast method for quantum mechanical molecular dynamics;PHYSICAL REVIEW B;86;17;174308;10.1103/PhysRevB.86.174308;NOV 29 2012;2012;As the processing power available for scientific computing grows,;first-principles Born-Oppenheimer molecular dynamics simulations are;becoming increasingly popular for the study of a wide range of problems;in materials science, chemistry, and biology. Nevertheless, the;computational cost of Born-Oppenheimer molecular dynamics still remains;prohibitively large for many potential applications. Here we show how to;avoid a major computational bottleneck: the self-consistent-field;optimization prior to force calculations. The optimization-free quantum;mechanical molecular dynamics method gives trajectories that are almost;indistinguishable from an "exact" microcanonical Born-Oppenheimer;molecular dynamics simulation even when low-prefactor linear scaling;sparse matrix algebra is used. Our findings show that the computational;gap between classical and quantum mechanical molecular dynamics;simulations can be significantly reduced.;4;0;0;0;4;1098-0121;WOS:000311693600003;;;J;Ong, Zhun-Yong;Fischetti, Massimo V.;Theory of interfacial plasmon-phonon scattering in supported graphene;(vol 86, 165422, 2012);PHYSICAL REVIEW B;86;19;199904;10.1103/PhysRevB.86.199904;NOV 29 2012;2012;Ong, Zhun-Yong/B-9486-2013;Ong, Zhun-Yong/0000-0003-2668-6453;6;0;0;0;6;1098-0121;WOS:000311694200007;;;J;Per, Manolo C.;Snook, Ian K.;Russo, Salvy P.;Efficient calculation of unbiased expectation values in diffusion;quantum Monte Carlo;PHYSICAL REVIEW B;86;20;201107;10.1103/PhysRevB.86.201107;NOV 29 2012;2012;Despite the proven utility of quantum Monte Carlo methods in addressing;the quantum many-body problem, many important observables are difficult;to calculate due to the presence of large, and sometimes divergent,;statistical errors. The present state of the art allows the construction;of renormalized estimators which result in finite variances, but which;invariably include some systematic bias. We present a simple method for;calculating unbiased expectation values of local operators in the;diffusion quantum Monte Carlo method which is applicable to both bare;and renormalized estimators, allowing the accurate calculation of;important properties such as forces.;snook, ian/A-3427-2009; Per, Manolo/C-3680-2011;1;0;0;0;1;1098-0121;WOS:000311694300001;;;J;Simonson, J. W.;Smith, G. J.;Post, K.;Pezzoli, M.;Kistner-Morris, J. J.;McNally, D. E.;Hassinger, J. E.;Nelson, C. S.;Kotliar, G.;Basov, D. N.;Aronson, M. C.;Magnetic and structural phase diagram of CaMn2Sb2;PHYSICAL REVIEW B;86;18;184430;10.1103/PhysRevB.86.184430;NOV 29 2012;2012;On the basis of magnetic, transport, and optical measurements performed;on single crystals, we report CaMn2Sb2 to be an antiferromagnetic;insulator that exhibits weak ferromagnetic order above the Neel;temperature. Magnetic susceptibility measurements reveal the magnitude;of the high-temperature Curie-Weiss moment to be only half as large as;the ground-state ordered moment, while electronic-structure calculations;based on crystallographic measurements suggest a crystal-field-induced;spin-state transition does not occur. The antiferromagnetic state is;relatively insensitive to both doping and modest pressures, while the;ferromagnetism can be readily tuned by either. Infrared transmission and;pressure-dependent resistivity measurements suggest proximity to an;electronic delocalization transition. We suggest the ferromagnetic state;may be the signature of magnetic polarons.;1;1;0;0;1;1098-0121;WOS:000311693900003;;;J;Stishov, Sergei M.;Petrova, Alla E.;Sidorov, Vladimir A.;Menzel, Dirk;Self-doping effects in cobalt silicide CoSi: Electrical, magnetic,;elastic, and thermodynamic properties (vol 86, 064433, 2012);PHYSICAL REVIEW B;86;17;179903;10.1103/PhysRevB.86.179903;NOV 29 2012;2012;0;0;0;0;0;1098-0121;WOS:000311693600005;;;J;Thede, M.;Xiao, F.;Baines, Ch.;Landee, C.;Morenzoni, E.;Zheludev, A.;Ordering in weakly coupled random singlet spin chains;PHYSICAL REVIEW B;86;18;180407;10.1103/PhysRevB.86.180407;NOV 29 2012;2012;The influence of bond randomness on long-range magnetic ordering in the;weakly coupled S = 1/2 antiferromagnetic spin chain materials;Cu(py)(2)(Cl1-xBrx)(2) is studied by muon spin rotation and bulk;measurements. Disorder is found to have a strong effect on the ordering;temperature T-N, and an even stronger one on the saturation;magnetization m(0), but considerably more so in the effectively;lower-dimensional Br-rich materials. The observed behavior is attributed;to random singlet ground states of individual spin chains, but remains;in contradiction with chain mean-field theory [Joshi and Yang, Phys.;Rev. B 67, 174403 (2003)] predictions. In this context, we discuss the;possibility of a universal distribution of ordered moments in the weakly;coupled random singlet chains model.;Thede, Matthias/L-2975-2013;4;0;0;0;4;1098-0121;WOS:000311693900001;;;J;Usov, V.;Stoyanov, S.;Coileain, C. O.;Toktarbaiuly, O.;Shvets, I. V.;Antiband instability on vicinal Si(111) under the condition of;diffusion-limited sublimation;PHYSICAL REVIEW B;86;19;195317;10.1103/PhysRevB.86.195317;NOV 29 2012;2012;In this paper, we investigate the antiband instability on vicinal;Si(111) surfaces with different angles of misorientation. It is known;that prolonged direct current-annealing of Si(111) results in the;formation of antibands; i.e., the step bunches with the opposite slope;to the primary bunches. We provide a theoretical description of antiband;formation via the evolution of the atomic steps' shape. We also derive a;criterion for the onset of the antiband instability under the conditions;of sublimation controlled by slow adatom surface diffusion. We examine;this criterion experimentally by studying the initial stage of the;antiband formation at a constant temperature of 1270 degrees C while;systematically varying the applied electromigration field. The;experiment strongly supports the validity of the derived theoretical;criterion and indicates the importance of accounting for the factor of;critical field in the theoretical modeling of step bunching or antiband;instabilities. Deduced from the comparison of theory and experiment, the;Si surface atoms' effective charge cannot exceed double the elementary;charge, set by the lower limit of kinetic characteristic length d(s) =;0.3 nm. Using d(s) = 1.7 - 4.5 nm draws values of the effective charge;in line with the values reported in earlier studies.;Shvets, Igor/J-8710-2013;0;0;0;0;0;1098-0121;WOS:000311694200005;;;J;Weber, Cedric;Mila, Frederic;Anticollinear magnetic order induced by impurities in the frustrated;Heisenberg model of pnictides;PHYSICAL REVIEW B;86;18;184432;10.1103/PhysRevB.86.184432;NOV 29 2012;2012;We present Monte Carlo simulations for a classical antiferromagnetic;Heisenberg model with both nearest (J(1)) and next-nearest (J(2));exchange couplings on the square lattice in the presence of nonmagnetic;impurities. We show that the order-by-disorder entropy selection,;associated with the Ising-like phase transition that appears for;J(2)/J(1) > 1/2 in the pure spin model, is quenched at low temperature;due to the presence of nonmagnetic impurities. Evidence that a new;competing order is stabilized around the impurities and in turn induces;a reentrance phase transition is reported. Implications for local;magnetic measurement of the parent compound of iron pnictides are;briefly discussed.;Weber, Cedric/D-5027-2014;Weber, Cedric/0000-0002-6989-2700;4;0;0;0;4;1098-0121;WOS:000311693900005;;;J;Weston, L.;Cui, X. Y.;Delley, B.;Stampfl, C.;
12:332:6 Thickness dependence of temperature-induced emission mechanism in InGaN/AlGaN short-period superlattices
DOI:10.1063/1.4746744 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Noh, Young-Kyun;Seo, Jeong-Han;Choi, Hyo-Seok;Kim, Moon-Deock;Oh, Jae-Eung;
12:333:1 Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth
DOI:10.1016/j.jcrysgro.2009.10.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:15 AU: Mercier, Frederic;Dedulle, Jean-Marc;Chaussende, Didier;Pons, Michel;
12:333:2 Effect of thermocouple position on temperature field in nitride MOCVD reactor
DOI:10.1016/j.jcrysgro.2013.01.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Li, Zhiming;Li, Jinping;Jiang, Haiying;Han, Yanbin;Yin, Jianqin;Xia, Yingjie;Chang, Yongming;Zhang, Jincheng;Hao, Yue;
12:333:3 Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactor
DOI:10.1016/j.jcrysgro.2014.05.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Li, Zhiming;Zhang, Jincheng;Li, Jinping;Jiang, Haiying;Fu, Xiaoqian;Han, Yanbin;Xia, Yingjie;Huang, Yimei;Yin, Jianqin;Zhang, Lejuan;Hao, Yue;
12:333:4 Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition
DOI:10.1016/j.apsusc.2011.04.099 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Li, Zheng;Jiang, Yuxuan;Yu, Tongjun;Yang, Zhiyuan;Tao, Yuebin;Jia, Chuanyu;Chen, Zhizhong;Yang, Zhijian;Zhang, Guoyi;
12:333:5 Numerical simulation on turbulent flows in vertical chemical vapor deposition reactors
DOI:10.1016/j.jcrysgro.2010.11.070 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Tian, Yan;Li, Chang-Feng;Jiang, Hua-Hong;Li, Hui;Zuo, Ran;
12:333:6 Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics
DOI:10.1016/j.jcrysgro.2010.10.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Mercier, Frederic;Nishizawa, Shin-ichi;
12:333:7 Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals
DOI:10.1016/j.jcrysgro.2011.11.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Mercier, Frederic;Nishizawa, Shin-ichi;
12:333:8 Fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by Laser Interference Lithography
DOI:10.1007/s00339-013-7895-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Cui, Lin;Wang, Gui-Gen;Zhang, Hua-Yu;Han, Jie-Cai;Kuang, Xu-Ping;Tian, Ji-Li;Sun, Rui;
12:333:9 Numerical analysis of the velocity of SiC growth by the top seeding method
DOI:10.1016/j.jcrysgro.2012.03.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Inui, F.;Gao, B.;Nakano, S.;Kakimoto, K.;
12:333:10 Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
DOI:10.1016/j.jcrysgro.2014.03.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Kusunoki, Kazuhiko;Okada, Nobuhiro;Kamei, Kazuhito;Moriguchi, Koji;Daikoku, Hironori;Kado, Motohisa;Sakamoto, Hidemitsu;Bessho, Takeshi;Ujihara, Toru;
12:334:1 Generation of single-crystalline domain in nano-scale silicon pillars by near-field short pulsed laser
DOI:10.1007/s00339-013-8109-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Bin In, Jung;Xiang, Bin;Hwang, David J.;Ryu, Sang-Gil;Kim, Eunpa;Yoo, Jae-Hyuck;Dubon, Oscar;Minor, Andrew M.;Grigoropoulos, Costas P.;
12:334:2 In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization
DOI:10.1021/nl3007352 JN:NANO LETTERS PY:2012
TC:12 AU: Xiang, Bin;Hwang, David J.;Bin In, Jung;Ryu, Sang-Gil;Yoo, Jae-Hyuck;Dubon, Oscar;Minor, Andrew M.;Grigoropoulos, Costas P.;
12:334:3 In situ laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope
DOI:10.1063/1.3422473 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Taheri, M. L.;McGowan, S.;Nikolova, L.;Evans, J. E.;Teslich, N.;Lu, J. P.;LaGrange, T.;Rosei, F.;Siwick, B. J.;Browning, N. D.;
12:334:4 Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation
DOI:10.1063/1.4764522 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Hayashi, Shohei;Fujita, Yuji;Kamikura, Takahiro;Sakaike, Kohei;Akazawa, Muneki;Ikeda, Mitsuhisa;Hanafusa, Hiroaki;Higashi, Seiichiro;
12:334:5 Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si
DOI:10.1063/1.4811356 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Zhang, J.;Trifunovic, M.;van der Zwan, M.;Takagishi, H.;Kawajiri, R.;Shimoda, T.;Beenakker, C. I. M.;Ishihara, R.;
12:334:6 Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation
DOI:10.1016/j.tsf.2013.02.129 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Heya, Akira;Kanda, Kazuhiro;Toko, Kaoru;Sadoh, Taizoh;Amano, Sho;Matsuo, Naoto;Miyamoto, Shuji;Miyao, Masanobu;Mochizuki, Takayasu;
12:334:7 In-situ micro and near-field photo-excitation under transmission electron microscopy
DOI:10.1016/j.apsusc.2013.11.061 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Ohno, Y.;Yonenaga, I.;
12:334:8 Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing
DOI:10.2320/matertrans.M2010154 JN:MATERIALS TRANSACTIONS PY:2010
TC:6 AU: Matsuo, Naoto;Isoda, Nobuya;Heya, Akira;Amano, Sho;Miyamoto, Shuji;Mochizuki, Takayasu;Kawamoto, Naoya;
12:335:1 Surface texturing of sputtered ZnO:Al/Ag back reflectors for flexible silicon thin-film solar cells
DOI:10.1016/j.solmat.2011.02.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:23 AU: Cho, Jun-Sik;Baek, Sanghun;Lee, Jeong Chul;
12:335:2 Fabrication and characterization of flexible Ag/ZnO Schottky diodes on polyimide substrates
DOI:10.1016/j.tsf.2013.09.090 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Zhang, XinAn;Zhai, JunXia;Yu, XianKun;Ding, LingHong;Zhang, WeiFeng;
12:335:3 High roughness Ag back reflector on a metal underlayer for thin film solar cell applications
DOI:10.1016/j.materresbull.2013.07.032 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:0 AU: Lee, Yoo Jeong;Yeon, Chang Bong;Yun, Sun Jin;Lee, Kyu-Sung;Lim, Jung Wook;Kim, Kyoung-Bo;Baek, Jehoon;
12:335:4 Modelling and optimization of a-Si:H solar cells with ZnO:Al back reflector
DOI:10.1016/j.solmat.2010.06.039 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:13 AU: Dagamseh, A. M. K.;Vet, B.;Sutta, P.;Zeman, M.;
12:335:5 Fabrication of dc sputtered Ag/Al:Si bilayers with improved optical reflectance
DOI:10.1016/j.tsf.2012.06.026 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Cho, Jun-Sik;Yoo, Jinsu;Park, Joo Hyung;Shin, Keeshik;Yoon, Kyung Hoon;
12:335:6 Insulating oxide buffer layer formed by sol-gel method for planarization of stainless steel substrate of a-Si:H thin film solar cell
DOI:10.1016/j.materresbull.2012.04.129 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Yun, Sun Jin;Lee, Yoo Jeong;Lim, Jung Wook;Yun, Joung Hee;Baek, Jehoon;Kim, Kyoung Bo;Park, Young Jun;
12:336:1 Catalyst-free chemical vapor deposition route to InN nanowires and their cathodoluminescence properties
DOI:10.1016/j.jallcom.2012.04.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Lei, M.;Huang, K.;Zhang, R.;Yang, H. J.;Fu, X. L.;Wang, Y. G.;Tang, W. H.;
12:336:2 Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires
DOI:10.1063/1.4729916 JN:AIP ADVANCES PY:2012
TC:3 AU: Ji, Xu;Cheng, Shuang;Hu, Hairong;Li, Huajun;Wu, Zhiguo;Yan, Pengxun;
12:336:3 Microstructural properties and initial growth behavior of InN nanobats grown on a Si(111) substrate
DOI:10.1016/j.jcrysgro.2009.12.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Kim, Y. H.;Yun, W. S.;Ruh, H.;Kim, C. S.;Kim, J. W.;Shin, Y. H.;Kim, M. D.;Oh, J. E.;
12:336:4 Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures
DOI:10.1016/j.jcrysgro.2013.09.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Suzuki, Hidetoshi;Sakai, Kentaro;Haraguchi, Tomohiro;Yamauchi, Toshihiro;Hijii, Masanobu;Maeda, Kouji;Ikari, Tetsuo;
12:336:5 Reactant-governing growth direction of indium nitride nanowires
DOI:10.1088/0957-4484/21/24/245601 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Liu, H.;Shi, L.;Geng, X.;Su, R.;Cheng, G.;Xie, S.;
12:336:6 Growth direction modulation and diameter-dependent mobility in InN nanowires
DOI:10.1088/0957-4484/22/29/295701 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Koley, Goutam;Cai, Zhihua;Bin Quddus, Ehtesham;Liu, Jie;Qazi, Muhammad;Webb, Richard A.;
12:336:7 Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates
DOI:10.1016/j.jcrysgro.2013.09.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Goff, L. E.;Powell, R. E. L.;Kent, A. J.;Foxon, C. T.;Novikov, S. V.;Webster, R.;Cherns, D.;
12:336:8 Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses
DOI:10.1016/j.jcrysgro.2012.03.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Liu, K. W.;Young, S. J.;Chang, S. J.;Hsueh, T. H.;Chen, Y. Z.;Chen, K. J.;Hung, H.;Wang, S. M.;Wu, Y. L.;
12:336:9 Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy
DOI:10.1016/j.tsf.2013.06.018 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Suzuki, Hidetoshi;Sadato, Hajime;Haraguchi, Tomohiro;Yamauchi, Toshihiro;Ozeki, Masashi;Ikari, Tetsuo;
12:337:1:1 Mechanism of femtosecond-laser induced refractive index change in phosphate glass under a low repetition-rate regime
DOI:10.1063/1.3468490 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Little, Douglas J.;Ams, Martin;Dekker, Peter;Marshall, Graham D.;Withford, Michael J.;
12:337:1:2 Femtosecond laser induced structural changes in fluorozirconate glass
DOI:10.1364/OME.3.000574 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:9 AU: Gross, Simon;Lancaster, David G.;Ebendorff-Heidepriem, Heike;Monro, Tanya M.;Fuerbach, Alexander;Withford, Michael J.;
12:337:1:3 Waveguide fabrication in lithium-niobo-phosphate glasses by high repetition rate femtosecond laser: route to non-equilibrium material's states
DOI:10.1364/OME.4.001197 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:2 AU: Dubov, Mykhaylo;Mezentsev, Vladimir;Manshina, Alina A.;Sokolov, Ivan A.;Povolotskiy, Alexey V.;Petrov, Yuri V.;
12:337:1:4 A parametric study of laser induced-effects in terbium-doped borosilicate glasses: prospects for compact magneto-optic devices
DOI:10.1364/OME.3.002096 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:3 AU: Liu, Qiang;Johnston, B. F.;Gross, S.;Withford, M. J.;Steel, M. J.;
12:337:1:5 Photosensitivity and thermal stability of UV-induced fiber Bragg gratings in phosphate glass fibers
DOI:10.1364/OME.4.001427 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Xiong, Lingyun;Hofmann, Peter;Schuelzgen, Axel;Peyghambarian, N.;Albert, Jacques;
12:337:2:1 Control of waveguide properties by tuning femtosecond laser induced compositional changes
DOI:10.1063/1.4896846 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: del Hoyo, Jesus;Vazquez, Rebeca Martinez;Sotillo, Belen;Teddy Fernandez, Toney;Siegel, Jan;Fernandez, Paloma;Osellame, Roberto;Solis, Javier;
12:337:2:2 Origin of the refractive index modification of femtosecond laser processed doped phosphate glass
DOI:10.1063/1.3572268 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Ferrer, Andres;Jaque, Daniel;Siegel, Jan;Ruiz de la Cruz, Alexandro;Solis, Javier;
12:337:2:3 Study of an optimised bidirectional pump scheme for fs-laser written Yb/Er-codoped integrated waveguides
DOI:10.1016/j.optmat.2010.10.001 JN:OPTICAL MATERIALS PY:2010
TC:4 AU: Valles, J. A.;Rebolledo, M. A.;Berdejo, V.;Ferrer, A.;Ruiz de la Cruz, A.;Solis, J.;
12:337:3:1 Structure and ion mobility in glasses in the BiF3-PbF2-ZrF4 systems studied by Raman and NMR spectroscopy
DOI:10.1016/j.noncrysol.2014.01.028 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:0 AU: Kavun, V. Ya;Voit, E. I.;Yaroshenko, R. M.;Goncharuk, V. K.;
12:337:3:2 Structure and optical properties of glasses in systems ZrF4-BiF3-BaF2-PbF2-LnF(3)
DOI:10.1016/j.jnoncrysol.2012.09.002 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Ignatieva, L. N.;Surovtsev, N. V.;Merkulov, E. B.;Savchenko, N. N.;Adichtchev, S. V.;Marchenko, Yu. V.;Bouznik, V. M.;
12:337:3:3 Ion mobility and thermal properties of glasses in the BiF3-LiF and BiF3-LiF-ZrF4 systems
DOI:10.1016/j.jnoncrysol.2013.01.047 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:1 AU: Kavun, V.;Merkulov, E.;Kharchenko, V.;Slobodyuk, A.;Goncharuk, V.;
12:338:1 Ultralow-voltage field-ionization discharge on whiskered silicon nanowires for gas-sensing applications
DOI:10.1038/nmat2944 JN:NATURE MATERIALS PY:2011
TC:28 AU: Sadeghian, Ramin Banan;Islam, M. Saif;
12:338:2 Self-Organization of a Hybrid Nanostructure consisting of a Nanoneedle and Nanodot
DOI:10.1002/smll.201200623 JN:SMALL PY:2012
TC:4 AU: Liu, Hai;Wu, Junsheng;Wang, Ying;Chow, Chee Lap;Liu, Qing;Gan, Chee Lip;Tang, Xiaohong;Rawat, Rajdeep Singh;Tan, Ooi Kiang;Ma, Jan;Huang, Yizhong;
12:338:3 A hybrid nanostructure array for gas sensing with ultralow field ionization voltage
DOI:10.1088/0957-4484/24/17/175301 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Liu, Hai;Yadian, Boluo;Liu, Qing;Gan, Chee Lip;Huang, Yizhong;
12:338:4 Direct current dielectric barrier discharges under voltages below the ionization potential of neutrals in electrode systems with one-dimensional nanostructures
DOI:10.1063/1.3552709 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Hou, Zhongyu;Zhou, Weimin;Wang, Yanyan;Cai, Bingchu;
12:338:5 Enhanced Field Ionization Enabled by Metal Induced Surface States on Semiconductor Nanotips
DOI:10.1002/adfm.201303308 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:0 AU: Karaagac, H.;Islam, M. Saif;
12:338:6 Ultralow-voltage field-ionization discharge on whiskered silicon nanowires for gas-sensing applications (vol 10, pg 135, 2011)
DOI:10.1038/NMAT2974 JN:NATURE MATERIALS PY:2011
TC:0 AU: Sadeghian, Ramin Banan;Islam, M. Saif;
12:339:1 Engineering gold alloys for plasmonics
DOI:10.1007/s00339-014-8716-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:4 AU: Nishijima, Yoshiaki;Hashimoto, Yoshikazu;Seniutinas, Gediminas;Rosa, Lorenzo;Juodkazis, Saulius;
12:339:2 Long-range interaction of localized surface plasmons in periodic and random patterns of Au nanoparticles
DOI:10.1007/s00339-013-8057-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:6 AU: Nishijima, Yoshiaki;Rosa, Lorenzo;Juodkazis, Saulius;
12:339:3 Reversible hydrogen evolution and oxidation on Pt electrode mediated by molecular ion
DOI:10.1016/j.apsusc.2013.10.164 JN:APPLIED SURFACE SCIENCE PY:2014
TC:8 AU: Juodkazis, Kestutis;Juodkazyte, Jurga;Sebeka, Benjaminas;Juodkazis, Saulius;
12:339:4 Tuning the plasmon resonance of metallic tin nanocrystals in Si-based materials
DOI:10.1007/s00339-010-5805-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:7 AU: Kjeldsen, Mads Mogelmose;Hansen, John Lundsgaard;Pedersen, Thomas Garm;Gaiduk, Peter;Larsen, Arne Nylandsted;
12:339:5 SERS scaling rules
DOI:10.1007/s00339-014-8717-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Nishijima, Yoshiaki;Hashimoto, Yoshikazu;Rosa, Lorenzo;Khurgin, Jacob B.;Juodkazis, Saulius;
12:339:6 Hydrogen species within the metals: Role of molecular hydrogen ion H-2(+)
DOI:10.1016/j.apsusc.2011.08.054 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Juodkazis, Kestutis;Juodkazyte, Jurga;Griguceviciene, Asta;Juodkazis, Saulius;
12:339:7 Molecular dynamics study of the effects of translational energy and incident angle on dissociation probability of hydrogen/deuterium molecules on Pt(111)
DOI:10.1063/1.3606434 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Koido, Tetsuya;Tomarikawa, Ko;Yonemura, Shigeru;Tokumasu, Takashi;
12:339:8 Electrochemical Modification of Surface Morphology of Au/Ti Bilayer Films Deposited on a Si Prism for in Situ Surface-Enhanced Infrared Absorption (SEIRA) Spectroscopy
DOI:10.1021/la102970r JN:LANGMUIR PY:2010
TC:10 AU: Ohta, Narumi;Nomura, Kamba;Yagi, Ichizo;
12:339:9 Augmented sensitivity of an IR-absorption gas sensor employing a metal hole array
DOI:10.1364/OME.3.000968 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:6 AU: Nishijima, Yoshiaki;Adachi, Yuta;Rosa, Lorenzo;Juodkazis, Saulius;
12:339:10 The dynamic effects on dissociation probability of H-2-Pt(111) system by embedded atom method
DOI:10.1063/1.3554690 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Tokumasu, Takashi;Ito, Daigo;
12:340:1 Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
DOI:10.1016/j.jcrysgro.2012.11.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Lundskog, Anders;Hsu, C. W.;Nilsson, D.;Karlsson, K. F.;Forsberg, U.;Holtz, P. O.;Janzen, E.;
12:340:2 Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications
DOI:10.1016/j.jcrysgro.2015.03.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Ho, Jian-Wei;Tan, Rayson J. N.;Heuken, Michael;Tay, Andrew A. O.;Chua, Soo-Jin;
12:340:3 Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy
DOI:10.1063/1.3497017 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Akasaka, Tetsuya;Kobayashi, Yasuyuki;Kasu, Makoto;
12:340:4 Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
DOI:10.1016/j.jcrysgro.2013.08.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Ho, Jian Wei;Zhang, Li;Wee, Qixun;Tay, Andrew A. O.;Heuken, Michael;Chua, Soo-Jin;
12:341:1 Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates
DOI:10.1116/1.3276426 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:11 AU: Novikov, S. V.;Zainal, N.;Akimov, A. V.;Staddon, C. R.;Kent, A. J.;Foxon, C. T.;
12:341:2 Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.12.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Novikov, S. V.;Staddon, C. R.;Luckert, F.;Edwards, P. R.;Martin, R. W.;Kent, A. J.;Foxon, C. T.;
12:341:3 Plasma assisted molecular beam epitaxy of GaN with growth retes > 2.6 mu m/h
DOI:10.1016/j.jcrysgro.2013.10.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: McSkimming, Brian M.;Wu, F.;Huault, Thomas;Chaix, Catherine;Speck, James S.;
12:341:4 Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers
DOI:10.1016/j.jcrysgro.2015.02.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Novikov, S. V.;Staddon, C. R.;Martin, R. W.;Kent, A. J.;Foxon, C. T.;
12:341:5 Growth diagram of N-face GaN (000(1)over-bar) grown at high rate by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4861746 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Okumura, Hironori;McSkimming, Brian M.;Huault, Thomas;Chaix, Catherine;Speck, James S.;
12:341:6 Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.03.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Novikov, S. V.;Staddon, C. R.;Powell, R. E. L.;Akimov, A. V.;Luckert, F.;Edwards, P. R.;Martin, R. W.;Kent, A. J.;Foxon, C. T.;
12:341:7 Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy
DOI:10.1016/j.tsf.2013.02.013 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Klosek, K.;Sobanska, M.;Tchutchulashvili, G.;Zytkiewicz, Z. R.;Teisseyre, H.;Klopotowski, L.;
12:341:8 Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.06.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Novikov, S. V.;Powell, R. E. L.;Staddon, C. R.;Kent, A. J.;Foxon, C. T.;
12:342:1 Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities
DOI:10.1063/1.4832069 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Tao, Renchun;Arita, Munetaka;Kako, Satoshi;Arakawa, Yasuhiko;
12:342:2 Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells
DOI:10.1103/PhysRevB.84.115315 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Rossbach, G.;Levrat, J.;Dussaigne, A.;Cosendey, G.;Glauser, M.;Cobet, M.;Butte, R.;Grandjean, N.;Teisseyre, H.;Bockowski, M.;Grzegory, I.;Suski, T.;
12:342:3 Room Temperature Current Injection Polariton Light Emitting Diode with a Hybrid Microcavity
DOI:10.1021/nl2011164 JN:NANO LETTERS PY:2011
TC:13 AU: Lu, Tien-Chang;Chen, Jun-Rong;Lin, Shiang-Chi;Huang, Si-Wei;Wang, Shing-Chung;Yamamoto, Yoshihisa;
12:342:4 Polariton emission characteristics of a modulation-doped multiquantum-well microcavity diode
DOI:10.1063/1.4755777 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Das, Ayan;Xiao, Bo;Bhowmick, Sishir;Bhattacharya, Pallab;
12:342:5 Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells
DOI:10.1103/PhysRevB.82.125405 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Mata, R.;Cros, A.;Budagosky, J. A.;Molina-Sanchez, A.;Garro, N.;Garcia-Cristobal, A.;Renard, J.;Founta, S.;Gayral, B.;Bellet-Amalric, E.;Bougerol, C.;Daudin, B.;
12:342:6 Polariton formation in a microcavity with a doped quantum well: Roles of the Fermi edge singularity and Anderson orthogonality catastrophe
DOI:10.1103/PhysRevB.89.245301 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Baeten, Maarten;Wouters, Michiel;
12:342:7 AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
DOI:10.1016/j.jcrysgro.2012.09.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Mitsunari, T.;Tanikawa, T.;Honda, Y.;Yamaguchi, M.;Amano, H.;
12:343:1 Strain induced suppression of silver agglomeration of indium-containing silver contact
DOI:10.1063/1.3430509 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Jung, Gwan Ho;Son, Jun Ho;Song, Yang Hee;Lee, Jong-Lam;
12:343:2 Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN
DOI:10.1016/j.jallcom.2013.11.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Kim, Dae-Hyun;Lim, Weon Cheol;Park, Jae-Seong;Seong, Tae-Yeon;
12:343:3 Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes
DOI:10.1063/1.4737015 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Jeon, Joon-Woo;Yum, Woong-Sun;Oh, Semi;Kim, Kyung-Kook;Seong, Tae-Yeon;
12:343:4 Performance characteristics of GaN-based light-emitting diodes fabricated with AgNi, AgCu, and AgAl-alloy reflectors
DOI:10.1116/1.3539234 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Kim, Hyunsoo;Lee, Sung-Nam;
12:343:5 Delayed < 111 > texture for improving the thermal stability of Ag reflectors for high-performance GaN-based light-emitting diodes
DOI:10.1016/j.scriptamat.2014.01.037 JN:SCRIPTA MATERIALIA PY:2014
TC:1 AU: Sung, Jun-Suk;Han, Jaecheon;Noh, Do-Young;Seong, Tae-Yeon;
12:343:6 Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts
DOI:10.1007/s11664-011-1745-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:0 AU: Jung, Se-Yeon;Lee, Sang Youl;Song, June-O;Jin, Sungho;Seong, Tae-Yeon;
12:343:7 Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes (vol 101, 021115, 2012)
DOI:10.1063/1.4747498 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Jeon, Joon-Woo;Yum, Woong-Sun;Oh, Semi;Kim, Kyoung-Kook;Seong, Tae-Yeon;
12:343:8 Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
DOI:10.1063/1.3685466 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kim, Kyu Sang;Suh, Myoung Gyun;Cho, S. N.;
12:344:1 Chemical vapor deposition growth of InN nanostructures: Morphology regulation and field emission properties
DOI:10.1016/j.apsusc.2012.06.013 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Zhang, Fan;Wu, Qiang;Zhang, Yongliang;Zhu, Jianmin;Liu, Ning;Yang, Jing;Wang, Xizhang;Hu, Zheng;
12:344:2 Properties of uniform diameter InN nanowires obtained under Si doping
DOI:10.1088/0957-4484/22/12/125704 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Gotschke, T.;Schaefer-Nolte, E. O.;Caterino, R.;Limbach, F.;Stoica, T.;Sutter, E.;Jeganathan, K.;Calarco, R.;
12:344:3 Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures
DOI:10.1016/j.jcrysgro.2010.04.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Yun, Seok-Hyo;Ra, Yong-Ho;Lee, Young-Min;Song, Ki-Young;Cha, Jun-Ho;Lim, Hong-Chul;Kim, Dong-Wook;Kissinger, N. J. Suthan;Lee, Cheul-Ro;
12:344:4 Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
DOI:10.1088/0957-4484/22/23/235603 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Zhang, Biao;Song, Huaping;Xu, Xiaoqing;Liu, Jianming;Wang, Jun;Liu, Xianglin;Yang, Shaoyan;Zhu, Qinsheng;Wang, Zhanguo;
12:344:5 InN nanopillars grown from In-rich conditions by migration enhanced afterglow technique
DOI:10.1016/j.matlet.2013.04.104 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Terziyska, Penka T.;Butcher, Kenneth Scott Alexander;Gogova, Daniela;Alexandrov, Dimiter;Binsted, Peter;Wu, Guosheng;
12:344:6 Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE
DOI:10.1016/j.jcrysgro.2011.01.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Lai, Fang-I;Kuo, Shou-Yi;Chen, Wei-Chun;Lin, Woei-Tyng;Wang, Wei-Lin;Chang, Li;Hsiao, Chien-Nan;Chiang, Chung-Hao;
12:344:7 Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition
DOI:10.1557/JMR.2010.0219 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:2 AU: Yun, Seok-Hyo;Kissinger, Suthan;Kim, Don Wook;Cha, Jun-Ho;Ra, Yong-Ho;Lee, Cheul-Ro;
12:345:1:1 Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping
DOI:10.1016/j.jcrysgro.2015.05.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Dhayalan, Sathish Kumar;Loo, Roger;Hikavyy, Andriy;Rosseel, Erik;Bender, Hugo;Richard, Olivier;Vandervorst, Wilfried;
12:345:1:2 Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys
DOI:10.1016/j.tsf.2009.10.088 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Bauer, M.;Thomas, S. G.;
12:345:1:3 Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.12.084 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Arimoto, Keisuke;Furukawa, Hiroshi;Yamanaka, Junji;Yamamoto, Chiaya;Nakagawa, Kiyokazu;Usami, Noritaka;Sawano, Kentarou;Shiraki, Yasuhiro;
12:345:1:4 Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors
DOI:10.1016/j.tsf.2011.10.107 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Weeks, K. D.;Thomas, S. G.;Dholabhai, P.;Adams, J.;
12:345:1:5 Epitaxy of Si:C on Si(001) via methyldichlorosilane
DOI:10.1016/j.mssp.2013.03.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:0 AU: Tomasini, Pierre;
12:345:1:6 Low temperature Si:C co-flow and hybrid process using Si3H8/Cl-2
DOI:10.1016/j.tsf.2011.12.008 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Bauer, M.;Thomas, S. G.;
12:345:2:1 Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
DOI:10.1063/1.3677949 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Lastras-Martinez, L. F.;Balderas-Navarro, R. E.;Herrera-Jasso, R.;Ortega-Gallegos, J.;Lastras-Martinez, A.;Cordier, Y.;Moreno, J. -Ch.;Frayssinet, E.;Semond, F.;
12:345:2:2 Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)
DOI:10.1063/1.4773560 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Balderas-Navarro, R. E.;Ulloa-Castillo, N. A.;Arimoto, K.;Ramirez-Melendez, G.;Lastras-Martinez, L. F.;Furukawa, H.;Yamanaka, J.;Lastras-Martinez, A.;Flores-Camacho, J. M.;Usami, N.;Stifter, D.;Hingerl, K.;
12:345:2:3 In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
DOI:10.1063/1.3457901 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Yu, J. L.;Chen, Y. H.;Ye, X. L.;Jiang, C. Y.;Jia, C. H.;
12:345:3:1 Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy
DOI:10.1063/1.4828737 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Lastras-Martinez, L. F.;Herrera-Jasso, R.;Ulloa-Castillo, N. A.;Balderas-Navarro, R. E.;Lastras-Martinez, A.;Lin, Angie C.;Fejer, M. M.;Harris, James S.;
12:345:3:2 Optical anisotropies of Si grown on step-graded SiGe(110) layers
DOI:10.1063/1.3339881 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Balderas-Navarro, R. E.;Lastras-Martinez, L. F.;Arimoto, K.;Castro-Garcia, R.;Villalobos-Aguilar, O.;Lastras-Martinez, A.;Nakagawa, K.;Sawano, K.;Shiraki, Y.;Usami, N.;Nakajima, K.;
12:345:3:3 Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.10.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Lin, Angie C.;Fejer, M. M.;Harris, James S.;
12:346:1 Strong free-carrier electro-optic response of sputtered ZnO films
DOI:10.1063/1.4749404 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Dominici, Lorenzo;der Maur, Matthias Auf;Michelotti, Francesco;
12:346:2 Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities
DOI:10.1063/1.3591174 JN:APPLIED PHYSICS LETTERS PY:2011
TC:24 AU: Lo Savio, R.;Portalupi, S. L.;Gerace, D.;Shakoor, A.;Krauss, T. F.;O'Faolain, L.;Andreani, L. C.;Galli, M.;
12:346:3 Carrier-induced refractive index change and optical absorption in wurtzite InN and GaN: Full-band approach
DOI:10.1103/PhysRevB.81.155206 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Bulutay, Ceyhun;Turgut, Cem Murat;Zakhleniuk, N. A.;
12:346:4 Continuous wave spectroscopy of nonlinear dynamics of Si nanocrystals in a microdisk resonator
DOI:10.1103/PhysRevB.84.245312 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Xie, Min;Pitanti, Alessandro;Ghulinyan, Mher;Yang, Deren;Pucker, Georg;Pavesi, Lorenzo;
12:346:5 Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN films
DOI:10.1063/1.3618682 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Li, Yi;Zhang, Rong;Liu, Bin;Xie, Zili;Fu, Deyi;Su, Hui;Zheng, Youdou;
12:346:6 Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
DOI:10.1103/PhysRevB.84.085320 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Hauke, N.;Lichtmannecker, S.;Zabel, T.;Laussy, F. P.;Laucht, A.;Kaniber, M.;Bougeard, D.;Abstreiter, G.;Finley, J. J.;Arakawa, Y.;
12:346:7 Spectral dependence of third-order nonlinear optical properties in InN
DOI:10.1063/1.4878618 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ahn, H.;Lee, M. -T.;Chang, Y. -M.;
12:346:8 Probing the Spontaneous Emission Dynamics in Si-Nanocrystals-Based Microdisk Resonators
DOI:10.1103/PhysRevLett.104.103901 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:14 AU: Pitanti, A.;Ghulinyan, M.;Navarro-Urrios, D.;Pucker, G.;Pavesi, L.;
12:346:9 Surface morphology of Si layers grown on SiO2
DOI:10.1016/j.apsusc.2012.05.069 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Shklyaev, A. A.;Kozhukhov, A. S.;Armbrister, V. A.;Gulyaev, D. V.;
12:347:1 Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy
DOI:10.1063/1.4817172 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Rahbany, N.;Kazan, M.;Tabbal, M.;Tauk, R.;Jabbour, J.;Brault, J.;Damilano, B.;Massies, J.;
12:347:2 Localized surface plasmon resonances in highly doped semiconductors nanostructures
DOI:10.1063/1.4760281 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Guilengui, V. N'Tsame;Cerutti, L.;Rodriguez, J. -B.;Tournie, E.;Taliercio, T.;
12:347:3 Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect
DOI:10.1063/1.3627172 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Hinkey, Robert T.;Tian, Zhaobing;Yang, Rui Q.;Mishima, Tetsuya D.;Santos, Michael B.;
12:347:4 Direct evidence of LO phonon-plasmon coupled modes in n-GaN
DOI:10.1063/1.3473826 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Talwar, Devki N.;
12:347:5 Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN
DOI:10.1063/1.4754555 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Ishitani, Yoshihiro;
12:347:6 Origin of Berreman effect in GaN layers on sapphire substrates
DOI:10.1063/1.3631830 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Raman, R.;Mishra, Puspashree;Kapoor, Ashok Kumar;Muralidharan, R.;
12:347:7 Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in GaN epilayers
DOI:10.1063/1.3599892 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Strelchuk, V. V.;Bryksa, V. P.;Avramenko, K. A.;Valakh, M. Ya.;Belyaev, A. E.;Mazur, Yu. I.;Ware, M. E.;DeCuir, E. A., Jr.;Salamo, G. J.;
12:348:1 X-ray diffuse scattering from threading dislocations in epitaxial GaN layers
DOI:10.1063/1.3460803 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Barchuk, M.;Holy, V.;Miljevic, B.;Krause, B.;Baumbach, T.;Hertkorn, J.;Scholz, F.;
12:348:2 Raman tensor elements and Faust-Henry coefficients of wurtzite-type alpha-GaN: How to overcome the dilemma of the sign of Faust-Henry coefficients in alpha-GaN?
DOI:10.1063/1.4904841 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Irmer, Gert;Roeder, Christian;Himcinschi, Cameliu;Kortus, Jens;
12:348:3 Observation of symmetrically decay of A(1)(longitudinal optical) mode in free-standing GaN bulk single crystal from Li3N flux method
DOI:10.1063/1.4775370 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhang, X. H.;Zhao, C. L.;Han, J. C.;Wang, Y.;Jian, J. K.;Wang, G.;Zhang, Z. H.;Li, H.;Wang, W. J.;Song, Y. T.;Liu, Y.;Bao, H. Q.;Chen, X. L.;Song, B.;
12:348:4 Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.09.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Barchuk, M.;Roeder, C.;Shashev, Y.;Lukin, G.;Motylenko, M.;Kortus, J.;Paetzold, O.;Rafaja, D.;
12:348:5 Grazing-incidence x-ray diffraction from GaN epitaxial layers with threading dislocations
DOI:10.1063/1.3543842 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Barchuk, M.;Holy, V.;Miljevic, B.;Krause, B.;Baumbach, T.;
12:348:6 Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates
DOI:10.1063/1.3674983 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ma, Bei;Jinno, Daiki;Miyake, Hideto;Hiramatsu, Kazumasa;Harima, Hiroshi;
12:348:7 Effect of proton irradiation on AlGaN/GaN micro-Hall sensors
DOI:10.1063/1.4805357 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Abderrahmane, A.;Koide, S.;Okada, H.;Takahashi, H.;Sato, S.;Ohshima, T.;Sandhu, A.;
12:349:1 Nanostructured ZnO as biomimetic anti-reflective coatings on textured silicon using a continuous solution process
DOI:10.1039/c2jm33462c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:11 AU: Han, Seung-Yeol;Paul, Brian K.;Chang, Chih-hung;
12:349:2 Highly Surface-Textured ZnO:Al Films Fabricated by Controlling the Nucleation and Growth Separately for Solar Cell Applications
DOI:10.1021/am100416e JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:22 AU: Wan, Dongyun;Huang, Fuqiang;Wang, Yaoming;Mou, Xinliang;Xu, Fangfang;
12:349:3 Nanostructured thin films for anti-reflection applications
DOI:10.1016/j.tsf.2011.01.110 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Chen, J. Y.;Sun, K. W.;
12:349:4 Effect of TiO2 nanopatterns on the performance of hydrogenated amorphous silicon thin-film solar cells
DOI:10.1016/j.tsf.2012.05.083 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Oh, Joon-Ho;Yang, Ji-Hwan;Lim, Koeng Su;Han, Kang-Soo;Kim, Yang-Doo;Lee, Heon;Song, Jun-Hyuk;Kim, Kyoung-Kook;Seong, Tae-Yeon;
12:350:1 Bulk lattice parameter and band gap of cubic InxGa1 _N-x (001) alloys on MgO (100) substrates
DOI:10.1016/j.jcrysgro.2015.02.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Compean Garcia, V. D.;Orozco Hinostroza, I. E.;Escobosa Echavarria, A.;Lopez Luna, E.;Rodriguez, A. G.;Vidal, M. A.;
12:350:2 Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers
DOI:10.1063/1.4776210 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Okubo, Kana;Kobayashi, Atsushi;Ohta, Jitsuo;Oshima, Masaharu;Fujioka, Hiroshi;
12:350:3 Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique
DOI:10.1063/1.4864283 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Nakamura, Eiji;Ueno, Kohei;Ohta, Jitsuo;Fujioka, Hiroshi;Oshima, Masaharu;
12:350:4 AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering
DOI:10.1063/1.4876449 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Watanabe, T.;Ohta, J.;Kondo, T.;Ohashi, M.;Ueno, K.;Kobayashi, A.;Fujioka, H.;
12:350:5 Critical thickness of beta-InN/GaN/MgO structures
DOI:10.1063/1.3309757 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Perez Caro, M.;Rodriguez, A. G.;Lopez-Luna, E.;Vidal, M. A.;Navarro-Contreras, H.;
12:350:6 Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers
DOI:10.1155/2012/853021 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Chen, Wei-Chun;Kuo, Shou-Yi;
12:350:7 High-quality InN films on MgO (100) substrates: The key role of 30 degrees in-plane rotation
DOI:10.1063/1.4876760 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Compean Garcia, V. D.;Orozco Hinostroza, I. E.;Escobosa Echavarria, A.;Lopez Luna, E.;Rodriguez, A. G.;Vidal, M. A.;
12:350:8 Infrared study of the absorption edge of beta-InN films grown on GaN/MgO structures
DOI:10.1063/1.3456171 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Perez-Caro, M.;Rodriguez, A. G.;Vidal, M. A.;Navarro-Contreras, H.;
12:350:9 Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy
DOI:10.1016/j.jcrysgro.2010.12.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Lai, Fang-I;Kuo, Shou-Yi;Lin, Woei-Tyng;Chen, Wei-Chun;Hsiao, Chien-Nan;Liu, Yu-Kai;Shen, Ji-Lin;
12:351:1 First-principles study of band gap engineering of ZnO by alloying with LiGaO2 for ultraviolet applications
DOI:10.1063/1.4818582 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Li, Qing Fang;Kuo, Jer-Lai;
12:351:2 First-principles study of the elasticity, piezoelectricity, and vibrational modes in LiGaO2 compared with ZnO and GaN
DOI:10.1103/PhysRevB.81.235214 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Boonchun, Adisak;Lambrecht, Walter R. L.;
12:351:3 Growth and characterization of beta-LiGaO2 single crystal
DOI:10.1016/j.jcrysgro.2014.06.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Chen, Chenlong;Li, Chu-An;Yu, Shih-Hsun;Chou, Mitch M. C.;
12:351:4 Novel photoluminescent properties of LiGaO2 nanoflakes
DOI:10.1016/j.jallcom.2011.05.027 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:1 AU: Hsiao, Yu-Jen;Fang, Te-Hua;Ji, Liang-Wen;Chiu, Zhe-Wei;
12:351:5 Cation order-disorder phase transitions in LiGaO2: Observation of the pathways of ternary wurtzite under high pressure
DOI:10.1063/1.3487976 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Lei, Li;Irifune, Tetsuo;Shinmei, Toru;Ohfuji, Hiroaki;Fang, Leiming;
12:351:6 Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films
DOI:10.1016/j.mseb.2010.01.064 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Li, Guoqiang;Mu, Shichun;Shih, Shao-Ju;
12:351:7 First-principles study of the elasticity, piezoelectricity, and vibrational modes in LiGaO2 compared with ZnO and GaN (vol 81, 235214, 2010)
DOI:10.1103/PhysRevB.82.079904 JN:PHYSICAL REVIEW B PY:2010
TC:1 AU: Boonchun, Adisak;Lambrecht, Walter R. L.;
12:351:8 Disorder-activated Raman spectra of cubic rocksalt-type Li(1-x)/2Ga(1-x)/2MxO (M=Mg, Zn) alloys
DOI:10.1063/1.4739766 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Lei, Li;Ohfuji, Hiroaki;Irifune, Tetsuo;Qin, Jiaqian;Zhang, Xinyu;Shinmei, Toru;
12:352:1 Seeding of Silicon Wire Growth by Out-Diffused Metal Precipitates
DOI:10.1002/smll.201002250 JN:SMALL PY:2011
TC:2 AU: Ganapati, Vidya;Fenning, David P.;Bertoni, Mariana I.;Kendrick, Chito E.;Fecych, Alexandria E.;Redwing, Joan M.;Buonassisi, Tonio;
12:352:2 Local melting in silicon driven by retrograde solubility
DOI:10.1016/j.actamat.2013.03.037 JN:ACTA MATERIALIA PY:2013
TC:2 AU: Fenning, D. P.;Newman, B. K.;Bertoni, M. I.;Hudelson, S.;Bemardis, S.;Marcus, M. A.;Fakra, S. C.;Buonassisi, T.;
12:352:3 Angular response of dye solar cells to solar and spectrally resolved light
DOI:10.1063/1.3663973 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: D'Ercole, Daniele;Dominici, Lorenzo;Brown, Thomas M.;Michelotti, Francesco;Reale, Andrea;Di Carlo, Aldo;
12:352:4 Retrograde Melting and Internal Liquid Gettering in Silicon
DOI:10.1002/adma.200904344 JN:ADVANCED MATERIALS PY:2010
TC:5 AU: Hudelson, Steve;Newman, Bonna K.;Bernardis, Sarah;Fenning, David P.;Bertoni, Mariana I.;Marcus, Matthew A.;Fakra, Sirine C.;Lai, Barry;Buonassisi, Tonio;
12:352:5 Three-dimensional photovoltaics
DOI:10.1063/1.3308490 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Myers, Bryan;Bernardi, Marco;Grossman, Jeffrey C.;
12:352:6 Formation of copper islands on a native SiO2 surface at elevated temperatures
DOI:10.1016/j.apsusc.2009.12.168 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Cechal, Jan;Polcak, Josef;Kolibal, Miroslav;Babor, Petr;Sikola, Tomas;
12:352:7 Angular and prism coupling refractive enhancement in dye solar cells
DOI:10.1063/1.3328097 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Dominici, Lorenzo;Vesce, Luigi;Colonna, Daniele;Michelotti, Francesco;Brown, Thomas M.;Reale, Andrea;Di Carlo, Aldo;
12:353:1 Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer
DOI:10.1007/s00339-013-7769-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Kumar, Manoj;Sekiguchi, Hiroto;Okada, Hiroshi;Wakahara, Akihiro;
12:353:2 A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector
DOI:10.1063/1.3629987 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Zhao, D. G.;Zhang, S.;Jiang, D. S.;Zhu, J. J.;Liu, Z. S.;Wang, H.;Zhang, S. M.;Zhang, B. S.;Yang, H.;
12:353:3 Performance comparison of front- and back-illuminated AlGaN-based metal-semiconductor-metal solar-blind ultraviolet photodetectors
DOI:10.1116/1.4769250 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:3 AU: Wang, Guosheng;Xie, Feng;Lu, Hai;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;Li, Liang;Zhou, Jianjun;
12:353:4 Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
DOI:10.1063/1.3576914 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Malinowski, Pawel E.;Duboz, Jean-Yves;De Moor, Piet;Minoglou, Kyriaki;John, Joachim;Horcajo, Sara Martin;Semond, Fabrice;Frayssinet, Eric;Verhoeve, Peter;Esposito, Marco;Giordanengo, Boris;BenMoussa, Ali;Mertens, Robert;Van Hoof, Chris;
12:353:5 Determination of satellite valley position in GaN emitter from photoexcited field emission investigations
DOI:10.1063/1.3533770 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Semenenko, M.;Yilmazoglu, O.;Hartnagel, H. L.;Pavlidis, D.;
12:353:6 Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors
DOI:10.1063/1.3453871 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Huang, Y.;Chen, D. J.;Lu, H.;Shi, H. B.;Han, P.;Zhang, R.;Zheng, Y. D.;
12:353:7 Optical characterization of GaN/AlGaN bilayer by transmission and reflection spectra
DOI:10.1063/1.3483952 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Li, Chao;Bao, Xichang;Xu, Jintong;Zhang, Yan;Li, Xiangyang;
12:353:8 Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors
DOI:10.1116/1.4871460 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Li, Xiaojing;Zhao, Degang;Jiang, Desheng;Liu, Zongshun;Chen, Ping;Le, Lingcong;Yang, Jing;He, Xiaoguang;Zhang, Shuming;Zhu, Jianjun;Wang, Hui;Zhang, Baoshun;Liu, Jianping;Yang, Hui;
12:353:9 Photo-assisted field emission and electro-reflectance modulation investigations of GaN nanorod arrays
DOI:10.1016/j.tsf.2014.06.017 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Semenenko, M.;Kyriienko, O.;Yilmazoglu, O.;Steblova, O.;Klyui, N.;
12:354:1 Atomically sharp 318nm Gd:AlGaN ultraviolet light emitting diodes on Si with low threshold voltage
DOI:10.1063/1.4807385 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kent, Thomas F.;Carnevale, Santino D.;Myers, Roberto C.;
12:354:2 Resonant indirect excitation of Gd3+ in AlN thin films
DOI:10.1063/1.4874745 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Ishizu, Yuta;Tsuji, Kazuma;Harada, Yukihiro;Kita, Takashi;Chigi, Yoshitaka;Nishimoto, Tetsuro;Tanaka, Hiroyuki;Kobayashi, Mikihiro;Ishihara, Tsuguo;Izumi, Hirokazu;
12:354:3 Effect of growth conditions on Eu3+ luminescence in GaN
DOI:10.1016/j.jcrysgro.2009.12.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Wang, R.;Steckl, A. J.;
12:354:4 Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity
DOI:10.1063/1.3658845 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Kitayama, Shinya;Yoshitomi, Hiroaki;Iwahashi, Shinya;Nakamura, Junya;Kita, Takashi;Chigi, Yoshitaka;Nishimoto, Tetsuro;Tanaka, Hiroyuki;Kobayashi, Mikihiro;Ishihara, Tsuguo;Izumi, Hirokazu;
12:354:5 Multiple excitation process in deep-ultraviolet emission from AlGdN thin films pumped by an electron beam
DOI:10.1063/1.4705416 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Iwahashi, Shinya;Kishi, Naohiro;Kitayama, Shinya;Kita, Takashi;Chigi, Yoshitaka;Nishimoto, Tetsuro;Tanaka, Hiroyuki;Kobayashi, Mikihiro;Ishihara, Tsuguo;Izumi, Hirokazu;
12:354:6 Structural and optical properties of GaN:Eu nanoparticles synthesized by simple ammonification method
DOI:10.1016/j.jallcom.2011.12.050 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Pan, Xiaojun;An, Xiuyun;Zhang, Zhenxing;Zhou, Jinyuan;Xie, Erqing;
12:354:7 Field-emission properties of carbon nanotube composite in side-electron emission configuration
DOI:10.1063/1.3567913 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Kishi, Naohiro;Kita, Takashi;Magario, Akira;Noguchi, Toru;
12:355:1 Controlling the Directional Emission of Light by Periodic Arrays of Hetero-structured Semiconductor Nanowires
DOI:10.1021/nn201557h JN:ACS NANO PY:2011
TC:12 AU: Diedenhofen, Silke L.;Janssen, Olaf T. A.;Hocevar, Moira;Pierret, Aurelie;Bakkers, Erik P. A. M.;Urbach, H. Paul;Rivas, Jaime Gomez;
12:355:2 Directional and Polarized Emission from Nanowire Arrays
DOI:10.1021/acs.nanolett.5b01135 JN:NANO LETTERS PY:2015
TC:0 AU: van Dam, Dick;Abujetas, Diego R.;Paniagua-Dominguez, Ramon;Sanchez-Gil, Jose A.;Bakkers, Erik P. A. M.;Haverkort, Jos E. M.;Rivas, Jaime Gomez;
12:355:3 Mapping the directional emission of quasi-two-dimensional photonic crystals of semiconductor nanowires using Fourier microscopy
DOI:10.1103/PhysRevB.86.245303 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;Formation of polar InN with surface Fermi level near the valence band;maximum by means of ammonia nitridation;PHYSICAL REVIEW B;86;24;245304;10.1103/PhysRevB.86.245304;DEC 10 2012;2012;Development of InN films for devices is hindered due to metallic In;clusters, formed readily during growth, and unintentional n-type;conductivity of the nominally undoped films, including surface;electron-accumulation layers via the Fermi level pinning into the;conduction band. Plasma nitridation eliminates even large In clusters;from the surface by changing them to two-dimensional InN [Yamaguchi and;Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar;approach, that is, nitridation of In-covered surfaces with ammonia (NH3);to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001);substrates. By means of scanning tunneling microscopy and spectroscopy,;as well as photoelectron spectroscopy, we show that this simple NH3;nitridation provides the hitherto not reported formation of polar;InN(000-1) films with the surface Fermi level close to the valence band;maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84,;205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304;1;0;0;0;1;1098-0121;WOS:000312065400006;;;J;Ghosh, Sankha;English, Niall J.;Ab initio study on optoelectronic properties of interstitially versus;substitutionally doped titania;PHYSICAL REVIEW B;86;23;235203;10.1103/PhysRevB.86.235203;DEC 10 2012;2012;Density functional theory calculations were performed for Cr, N, and C;monodoping in both rutile and anatase phases of crystalline titania. The;formation and binding energies, electronic structure, and optical;properties were determined. It was found that although C has a;predominant preference for occupying a lattice O-site, N has higher;preference for interstitial occupancy in the vicinity of an O atom in;anatase, whereas both prefer to maintain interstitial occupancy in;rutile, albeit with both N and C exhibiting a relatively higher;preference for anatase over rutile. Furthermore, Cr is more;energetically stable in the rutile phase relative to anatase for;substitutional doping, albeit with comparable formation energies for;both interstitial and substitutional doping. Interstitial C-impurities;were observed to occupy the oxygen lattice sites in anatase, but not in;rutile. In terms of N-doping, it was found that interstitial doping;exhibits higher visible light photoactivity than substitutional doping.;1;0;0;0;1;1098-0121;WOS:000312064700003;;;J;Howie, Ross T.;Scheler, Thomas;Guillaume, Christophe L.;Gregoryanz, Eugene;Proton tunneling in phase IV of hydrogen and deuterium;PHYSICAL REVIEW B;86;21;214104;10.1103/PhysRevB.86.214104;DEC 10 2012;2012;Using in situ optical spectroscopy we have investigated the temperature;stability of the mixed atomic and molecular phases IV of dense deuterium;and hydrogen. Through a series of low-temperature experiments at high;pressures, we observe phase III-to-IV transformation, imposing;constraints on the P-T phase diagrams. The spectral features of the;phase IV-III transition and differences in appearances of the isotopes;Raman spectra strongly indicate the presence of proton tunneling in;phase IV. No differences between isotopes were observed in absorption;spectroscopic studies, resulting in identical values for the band gap.;The extrapolation of the combined band gap yields 375 GPa as the minimum;transition pressure to the metallic state of hydrogen (deuterium). The;minute changes in optical spectra above 275 GPa might suggest the;presence of a new solid modification of hydrogen (deuterium), closely;related structurally to phase IV. DOI: 10.1103/PhysRevB. 86.214104;15;1;0;0;15;1098-0121;WOS:000312063700001;;;J;Hrahsheh, Fawaz;Hoyos, Jose A.;Vojta, Thomas;Rounding of a first-order quantum phase transition to a strong-coupling;critical point;PHYSICAL REVIEW B;86;21;214204;10.1103/PhysRevB.86.214204;DEC 10 2012;2012;We investigate the effects of quenched disorder on first-order quantum;phase transitions on the example of the N-color quantum Ashkin-Teller;model. By means of a strong-disorder renormalization group, we;demonstrate that quenched disorder rounds the first-order quantum phase;transition to a continuous one for both weak and strong coupling between;the colors. In the strong-coupling case, we find a distinct type of;infinite-randomness critical point characterized by additional internal;degrees of freedom. We investigate its critical properties in detail and;find stronger thermodynamic singularities than in the random transverse;field Ising chain. We also discuss the implications for higher spatial;dimensions as well as unusual aspects of our renormalization-group;scheme. DOI: 10.1103/PhysRevB.86.214204;Hoyos, Jose/F-2742-2012;2;0;0;0;2;1098-0121;WOS:000312063700002;;;J;Huevonen, D.;Zhao, S.;Ehlers, G.;Mansson, M.;Gvasaliya, S. N.;Zheludev, A.;Excitations in a quantum spin liquid with random bonds;PHYSICAL REVIEW B;86;21;214408;10.1103/PhysRevB.86.214408;DEC 10 2012;2012;We present the results of an inelastic neutron-scattering study on two;bond disordered quasi-two-dimensional quantum magnets;(C4H12N2)Cu-2(Cl1-xBrx)(6) with x = 0.035 and 0.075. We observe an;increase of spin gap, a reduction of magnon bandwidth, and a decrease of;magnon lifetimes compared to the x = 0 sample. Additional magnon damping;is observed at higher energies away from the zone center, which is found;to follow the density of single-particle states. DOI:;10.1103/PhysRevB.86.214408;Instrument, CNCS/B-4599-2012; Ehlers, Georg/B-5412-2008; Huvonen, Dan/A-6664-2008; Mansson, Martin/C-1134-2014;8;0;0;0;8;1098-0121;WOS:000312063700005;;;J;Hwang, Kyusung;Park, Kwon;Kim, Yong Baek;Influence of Dzyaloshinskii-Moriya interactions on magnetic structure of;a spin-1/2 deformed kagome lattice antiferromagnet;PHYSICAL REVIEW B;86;21;214407;10.1103/PhysRevB.86.214407;DEC 10 2012;2012;Motivated by the recent neutron-scattering experiment on Rb2Cu3SnF12;[Nature Phys. 6, 865 (2010)], we investigate the effect of;Dzyaloshinskii-Moriya interactions in a theoretical model for the;magnetic structure of this material. Considering the valence bond solid;ground state, which has a 12-site unit cell, we develop the bond;operator mean-field theory. It is shown that the Dzyaloshinskii-Moriya;interactions significantly modify the triplon dispersions around the;Gamma point and cause a shift of the spin-gap (the minimum triplon gap);position from the K to Gamma point in the first Brillouin zone. The spin;gap is also evaluated in exact diagonalization studies on a 24-site;cluster. We discuss a magnetic transition induced by the;Dzyaloshinskii-Moriya interactions in the bond operator framework.;Moreover, the magnetization process under external magnetic fields is;studied within the exact diagonalization approach. We find that the;results of both approaches are consistent with the experimental;findings. DOI: 10.1103/PhysRevB.86.214407;3;0;0;0;3;1098-0121;WOS:000312063700004;;;J;Ignacio, M.;Pierre-Louis, O.;Impalement dynamics and Brownian motion of solid islands on nanopillars;PHYSICAL REVIEW B;86;23;235410;10.1103/PhysRevB.86.235410;DEC 10 2012;2012;We study the dynamics of solid islands deposited on nanopillars using;kinetic Monte Carlo simulations. The islands are initially placed on the;top of the pillars, in the so-called Cassie-Baxter state. For high;pillars, the dynamics is divided into two phases. The first phase;corresponds to the deterministic and irreversible impalement of the;island. The dynamics of this phase is governed by surface diffusion.;Once the island has collapsed, a second phase is observed where the;island exhibits Brownian motion along the pillars, characterized by a;diffusion constant D-i and a kinetic coefficient K-i accounting for the;interaction of the island with the top of the pillars. The random walk;stops when the island reaches the bottom of the substrate, where it;sticks irreversibly. When the island wettability is small, the island;diffusion constant D-i is controlled by adatom diffusion, and scales as;the inverse of the number of atoms in the island. In contrast, for large;wettabilities, we observe that D-i oscillates as the island size is;increased. The minimum of the oscillations corresponds to;nucleation-limited dynamics, where D-i is independent of the island;size. We also determine the time for partial irreversible collapse on;shorter pillars, leading to the so-called Wenzel state. Finally, we;discuss the orders of magnitude of the typical duration of these;processes.;2;0;0;0;2;1098-0121;WOS:000312064700007;;;J;Jarlborg, T.;Barbiellini, B.;Markiewicz, R. S.;Bansil, A.;Different doping from apical and planar oxygen vacancies in;Ba2CuO4-delta and La2CuO4-delta: First-principles band structure;calculations;PHYSICAL REVIEW B;86;23;235111;10.1103/PhysRevB.86.235111;DEC 10 2012;2012;First-principles band structure calculations for large supercells of;Ba2CuO4-delta and La2CuO4-delta with different distributions and;concentrations of oxygen vacancies show that the effective doping on;copper sites strongly depends on where the vacancy is located. A vacancy;within the Cu layer produces a weak doping effect while a vacancy;located at an apical oxygen site acts as a stronger electron dopant on;the copper layers and gradually brings the electronic structure close to;that of La2-xSrxCuO4. These effects are robust and only depend;marginally on lattice distortions. Our results show that deoxygenation;can reduce the effect of traditional La/Sr or La/Nd substitutions. Our;study clearly identifies location of the dopant in the crystal structure;as an important factor in doping of the cuprate planes.;6;0;0;0;6;1098-0121;WOS:000312064700002;;;J;Kunimori, K.;Nakamura, M.;Nohara, H.;Tanida, H.;Sera, M.;Nishioka, T.;Matsumura, M.;Unusual magnetic order in CeT2Al10 (T = Ru, Os) in comparison with;localized NdFe2Al10;PHYSICAL REVIEW B;86;24;245106;10.1103/PhysRevB.86.245106;DEC 10 2012;2012;We have investigated the magnetic properties in the well localized;compound NdFe2Al10 and the Kondo semiconductor CeT2Al10 (T = Ru, Os) to;clarify the origin of the unusual magnetic order in CeT2Al10. In;NdFe2Al10, the experimental results of the magnetic properties could be;reproduced very well by the mean-field calculation for the;two-sublattice model. In CeT2Al10 we could reproduce the anisotropic;magnetic susceptibility in the paramagnetic region above 60-100 K very;well by the mean-field calculation for the two-sublattice model;introducing an anisotropic exchange interaction and the recently;determined crystalline electric field (CEF) level scheme from Strigari;et al. [Phys. Rev. B 86, 081105 (2012)]. However, in the;antiferromagnetic (AFM) ordered state, we could not reproduce the;experimental results at all in the framework of the mean-field;calculation for the two-sublattice model. We propose that although the;magnetic properties in the paramagnetic region above 60-100 K could be;understood well by a localized picture, the ordered state could not, and;that the c-f hybridization, especially along the a axis, is associated;with the unusual magnetic order in CeT2Al10. DOI:;10.1103/PhysRevB.86.245106;Tanida, Hiroshi/E-1878-2013;14;0;0;0;14;1098-0121;WOS:000312065400003;;;J;Lee, Jin Bae;Hong, Won G.;Kim, Hae Jin;Jaglicic, Z.;Jazbec, S.;Wencka, M.;Jelen, A.;Dolinsek, J.;Canted antiferromagnetism on a nanodimensional spherical surface;geometry: The case of MnCO3 small hollow nanospheres;PHYSICAL REVIEW B;86;22;224407;10.1103/PhysRevB.86.224407;DEC 10 2012;2012;Canted antiferromagnetism on a nanodimensional spherical surface;geometry was investigated on manganese carbonate MnCO3 small hollow;nanospheres of mean diameter 7.0 +/- 0.3 nm and shell thickness of 0.7;nm, by performing magnetic measurements and specific heat study, in;comparison to the bulk form of the same material. Contrary to the;expectation that small magnetic nanoparticles become superparamagnetic,;the phase transition to the canted antiferromagnetic (AFM) state in the;MnCO3 hollow nanospheres is preserved and retains, at a qualitative;level, all the features of the canted AFM state of the bulk material. At;a quantitative level, some significant differences between the hollow;nanospheres and the bulk were observed, which can all be explained by;the weakened interspin interactions in the hollow nanospheres due to;reduced atomic coordination by the neighboring atoms. This makes the;canted AFM structure of the hollow nanospheres more soft and fragile;with respect to external forces like the magnetic field, as compared to;the rigid and robust structure of the bulk material.;1;0;0;0;1;1098-0121;WOS:000312064300002;;;J;Levkivskyi, Ivan P.;Froehlich, Juerg;Sukhorukov, Eugene V.;Theory of fractional quantum Hall interferometers;PHYSICAL REVIEW B;86;24;245105;10.1103/PhysRevB.86.245105;DEC 10 2012;2012;Interference of fractionally charged quasiparticles is expected to lead;to Aharonov-Bohm oscillations with periods larger than the flux quantum.;However, according to the Byers-Yang theorem, observables of an;electronic system are invariant under an adiabatic insertion of a;quantum of singular flux. We resolve this seeming paradox by considering;a microscopic model of electronic interferometers made from a quantum;Hall liquid at filling factor 1/m with the shape of a Corbino disk. In;such interferometers, the quantum Hall edge states are utilized in place;of optical beams, the quantum point contacts play the role of beam;splitters connecting different edge channels, and Ohmic contacts;represent a source and drain of quasiparticle currents. Depending on the;position of Ohmic contacts, one distinguishes interferometers of;Fabry-Perot (FP) and Mach-Zehnder (MZ) type. An approximate ground state;of such interferometers is described by a Laughlin-type wave function,;and low-energy excitations are incompressible deformations of this;state. We construct a low-energy effective theory by restricting the;microscopic Hamiltonian of electrons to the space of incompressible;deformations and show that the theory of the quantum Hall edge so;obtained is a generalization of a chiral conformal field theory. In our;theory, a quasiparticle tunneling operator is found to be a;single-valued function of tunneling point coordinates, and its phase;depends on the topology determined by the positions of Ohmic contacts.;We describe strong coupling of the edge states to Ohmic contacts and the;resulting quasiparticle current through the interferometer with the help;of a master equation. We find that the coherent contribution to the;average quasiparticle current through MZ interferometers does not vanish;after summation over quasiparticle degrees of freedom. However, it;acquires oscillations with the electronic period, in agreement with the;Byers-Yang theorem. Importantly, our theory does not rely on any ad hoc;constructions, such as Klein factors, etc. When the magnetic flux;through an FP interferometer is varied with a modulation gate, current;oscillations have the quasiparticle periodicity, thus allowing for;spectroscopy of quantum Hall edge states. DOI:;10.1103/PhysRevB.86.245105;2;0;0;0;2;1098-0121;WOS:000312065400002;;;J;Li, Chun-Mei;Luo, Hu-Bin;Hu, Qing-Miao;Yang, Rui;Johansson, Borje;Vitos, Levente;Role of magnetic and atomic ordering in the martensitic transformation;of Ni-Mn-In from a first-principles study;PHYSICAL REVIEW B;86;21;214205;10.1103/PhysRevB.86.214205;DEC 10 2012;2012;The composition-dependent lattice parameters, crystal structure, elastic;properties, magnetic moment, and electronic structure of Ni2Mn1+xIn1-x;(0 <= x <= 0.6) are studied by using first-principles calculations. It;is shown that the martensitic phase transition (MPT) from cubic L2(1) to;tetragonal L1(0) accompanies theMn(Mn)-Mn-In ferromagnetic (FM) to;antiferromagnetic (AFM) transition, at around the critical composition x;= 0.32, in agreement with the experimental measurement. The Mn-In atomic;disorder leads to decreasing stability of the martensite relative to the;austenite, which depresses the MPT. The shear elastic constant C' of the;parent phase first decreases slightly with increasing x and then remains;almost unchanged above x = 0.32, indicating C' alone cannot account for;the increase of the MPT temperature with x. The total magnetic moments;for the L2(1) phase are in good agreement with those determined by;experiments, whereas for the L1(0) phase they are slightly larger than;the experimental data due to the possibleMn-In atomic disorder in the;sample. The calculated density of states demonstrate that the covalent;bonding between the minority spin states of Ni and In plays an important;role in both the magnetic and structural stability. DOI:;10.1103/PhysRevB.86.214205;Hu, Qing-Miao/D-3345-2014;5;0;0;0;5;1098-0121;WOS:000312063700003;;;J;Liu, Bin;Seko, Atsuto;Tanaka, Isao;Cluster expansion with controlled accuracy for the MgO/ZnO pseudobinary;system via first-principles calculations;PHYSICAL REVIEW B;86;24;245202;10.1103/PhysRevB.86.245202;DEC 10 2012;2012;Using the cluster analysis of the structure population (CASP) method,;error of cluster expansion (CE) can be controlled. Combining the CASP-CE;with a systematic set of first-principles total energies, a model;wide-gap pseudobinary system with simple crystal structures MgO-ZnO is;revisited. Ground-state structures are exhaustively searched for both;rocksalt and wurtzite structures. A few structures as yet unreported are;found. The vibrational contribution to the Gibbs free-energy is;evaluated by first-principles phonon calculations within the;quasiharmonic approximation. Monte Carlo simulations are then made to;compute grand potentials of two structures using the thermodynamic;integration. DOI: 10.1103/PhysRevB.86.245202;Tanaka, Isao/B-5941-2009; Liu, Bin/N-9955-2014;1;1;0;0;1;1098-0121;WOS:000312065400005;;;J;Liu, Pan;Santana, Juan A. Colon;Dai, Qilin;Wang, Xianjie;Dowben, Peter A.;Tang, Jinke;Sign of the superexchange coupling between next-nearest neighbors in EuO;PHYSICAL REVIEW B;86;22;224408;10.1103/PhysRevB.86.224408;DEC 10 2012;2012;The sign of the superexchange coupling J(2) between next-nearest;neighboring Eu2+ magnetic moments in EuO is a matter subject to debate.;We have obtained evidence that this coupling is of antiferromagnetic;nature (J(2) < 0). EuO thin films grown at different temperatures;suggest that lattice expansion results in enhancement of T-C as clearly;observed in stoichiometric EuO films grown on CaF2 substrates. Resonant;photoemission spectroscopy provides compelling evidence of strong;hybridization between O 2p and Eu 5d6s6p weighted bands, suggesting that;strong superexchange may be mediated by oxygen, thus consistent with the;observed antiferromagnetic behavior between the next-nearest neighboring;Eu atoms via nearest neighbor oxygen in EuO.;Dai, Qilin/K-1437-2013;2;0;0;0;2;1098-0121;WOS:000312064300003;;;J;Luisier, Mathieu;Atomistic modeling of anharmonic phonon-phonon scattering in nanowires;PHYSICAL REVIEW B;86;24;245407;10.1103/PhysRevB.86.245407;DEC 10 2012;2012;Phonon transport is simulated in ultrascaled nanowires in the presence;of anharmonic phonon-phonon scattering. A modified valence-force-field;model containing four types of bond deformation is employed to describe;the phonon band structure. The inclusion of five additional bond;deformation potentials allows us to account for anharmonic effects.;Phonon-phonon interactions are introduced through inelastic scattering;self-energies solved in the self-consistent Born approximation in the;nonequilibrium Green's function formalism. After calibrating the model;with experimental data, the thermal current, resistance, and;conductivity of < 100 >-, < 110 >-, and < 111 >-oriented Si nanowires;with different lengths and temperatures are investigated in the presence;of anharmonic phonon-phonon scattering and compared to their ballistic;limit. It is found that all the simulated thermal currents exhibit a;peak at temperatures around 200 K if phonon scattering is turned on;while they monotonically increase when this effect is neglected.;Finally, phonon transport through Si-Ge-Si nanowires is considered. DOI:;10.1103/PhysRevB.86.245407;12;1;0;0;12;1098-0121;WOS:000312065400007;;;J;Nemirovskii, Sergey K.;Fluctuations of the vortex line density in turbulent flows of quantum;fluids;PHYSICAL REVIEW B;86;22;224505;10.1103/PhysRevB.86.224505;DEC 10 2012;2012;We present an analytical study of fluctuations of the vortex line;density (VLD) in turbulent flows of;quantum fluids. Two cases are considered. The first is the;counterflowing (Vinen) turbulence, where the vortex lines are;disordered, and the evolution of quantity L(t) obeys the Vinen equation.;The second case is the fluctuations of the VLD in a single vortex;bundle, which develops inside the domain of the concentrated;normal-fluid vorticity. The dynamics of the vortex bundle is described;by the Hall-Vinen-Bekarevich-Khalatnikov (HVBK) equations. The latter;case is of special interest, because the set of the quantum vortex;bundles is believed to mimic classical hydrodynamic turbulence. In;steady states the VLD is related to the normal velocity as L = (rho;gamma/rho(s))(2)upsilon(2)(n) for the Vinen case. In the vortex bundle;case, which appears inside the domain of a concentrated vorticity of;normal fluid, the stationary quantity L can be found from the matching;of velocities and is described by L = vertical bar del x v(n)vertical;bar/kappa. In nonstationary situations, and particularly in the;fluctuating turbulent flow, there is a retardation between the;instantaneous value of the normal velocity and the quantity L. This;retardation tends to decrease in accordance with the inner dynamics,;which has a relaxation character. In both cases, the relaxation dynamics;of the VLD is related to fluctuations of the relative velocity. However,;for the Vinen case the rate of temporal change for L(t) is directly;dependent upon delta v(ns), whereas for HVBK dynamics it depends on del;x delta v(ns). Therefore, for the disordered case the spectrum coincides with the spectrum omega(-5/3). In the;case of the bundle arrangement, the spectrum of the VLD varies (at;different temperatures) from omega(1/3) to omega(-5/3) dependencies.;This conclusion may serve as a basis for the experimental determination;of what kind of turbulence is implemented in different types of;generation.;0;0;0;0;0;1098-0121;WOS:000312064300005;;;J;Peelaers, H.;Van de Walle, C. G.;Effects of strain on band structure and effective masses in MoS2;PHYSICAL REVIEW B;86;24;241401;10.1103/PhysRevB.86.241401;DEC 10 2012;2012;We use hybrid density functional theory to explore the band structure;and effective masses of MoS2, and the effects of strain on the;electronic properties. Strain allows engineering the magnitude as well;as the nature (direct versus indirect) of the band gap. Deformation;potentials that quantify these changes are reported. The calculations;also allow us to investigate the transition in band structure from bulk;to monolayer, and the nature and degeneracy of conduction-band valleys.;Investigations of strain effects on effective masses reveal that small;uniaxial stresses can lead to large changes in the hole effective mass.;DOI: 10.1103/PhysRevB.86.241401;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;56;3;0;0;56;1098-0121;WOS:000312065400001;;;J;Phien, Ho N.;Vidal, Guifre;McCulloch, Ian P.;Infinite boundary conditions for matrix product state calculations;PHYSICAL REVIEW B;86;24;245107;10.1103/PhysRevB.86.245107;DEC 10 2012;2012;We propose a formalism to study dynamical properties of a quantum;many-body system in the thermodynamic limit by studying a finite system;with "infinite boundary conditions" where both finite-size effects and;boundary effects have been eliminated. For one-dimensional systems,;infinite boundary conditions are obtained by attaching two boundary;sites to a finite system, where each of these two sites effectively;represents a semi-infinite extension of the system. One can then use;standard finite-size matrix product state techniques to study a region;of the system while avoiding many of the complications normally;associated with finite-size calculations such as boundary Friedel;oscillations. We illustrate the technique with an example of time;evolution of a local perturbation applied to an infinite;(translationally invariant) ground state, and use this to calculate the;spectral function of the S = 1 Heisenberg spin chain. This approach is;more efficient and more accurate than conventional simulations based on;finite-size matrix product state and density-matrix;renormalization-group approaches. DOI: 10.1103/PhysRevB.86.245107;McCulloch, Ian/A-6037-2011;McCulloch, Ian/0000-0002-8983-6327;6;0;0;0;6;1098-0121;WOS:000312065400004;;;J;Polyakov, O. P.;Corbetta, M.;Stepanyuk, O. V.;Oka, H.;Saletsky, A. M.;Sander, D.;Stepanyuk, V. S.;Kirschner, J.;Spin-dependent Smoluchowski effect;PHYSICAL REVIEW B;86;23;235409;10.1103/PhysRevB.86.235409;DEC 10 2012;2012;Electron charge near atomically sharp corrugations at the surfaces of a;solid tends to spill out and smoothen the abrupt variation of the;positions of the positively charged atomic nuclei. The reason is that;electrons are much less localized than nuclei. This has been discussed;already some 70 years ago by Smoluchowski [R. Smoluchowski, Phys. Rev.;60, 661 (1941)], and the corresponding effect of charge redistribution;near surface corrugations bears his name. The Smoluchowski effect;focuses on the total electron charge density. It neglects that;electrons-in addition to charge-also carry a spin. We discuss;spin-dependent electron spill out and demonstrate in a combined;theoretical and experimental work that compelling consequences for;spin-polarization and spin-dependent transport arise at the edges of;magnetic nanostructures due to the spin-dependent Smoluchowski effect.;We find a variation of the tunnel magnetoresistance ratio of more than;20% on a length scale of a few atomic diameters.;3;0;0;0;3;1098-0121;WOS:000312064700006;;;J;Rajeswaran, B.;Khomskii, D. I.;Zvezdin, A. K.;Rao, C. N. R.;Sundaresan, A.;Field-induced polar order at the Neel temperature of chromium in;rare-earth orthochromites: Interplay of rare-earth and Cr magnetism;PHYSICAL REVIEW B;86;21;214409;10.1103/PhysRevB.86.214409;DEC 10 2012;2012;We report field-induced switchable polarization (P similar to 0.2-0.8 mu;C/cm(2)) below the Neel temperature of chromium (T-N(Cr)) in weakly;ferromagnetic rare-earth orthochromites, RCrO3 (R = rare earth) but only;when the rare-earth ion is magnetic. Intriguingly, the polarization in;ErCrO3 (T-C = 133 K) disappears at a spin-reorientation (Morin);transition (T-SR similar to 22 K) below which the weak ferromagnetism;associated with the Cr sublattice also disappears, demonstrating the;crucial role of weak ferromagnetism in inducing the polar order.;Further, the polarization (P) is strongly influenced by an applied;magnetic field, indicating a strong magnetoelectric effect. We suggest;that the polar order occurs in RCrO3, due to the combined effect of the;poling field that breaks the symmetry and the exchange field on the R;ion from the Cr sublattice that stabilizes the polar state. We propose;that a similar mechanism could work in the isostructural rare-earth;orthoferrites RFeO3 as well. DOI: 10.1103/PhysRevB.86.214409;Athinarayanan, Sundaresan/B-2176-2010; Zvezdin, Anatoly/K-2072-2013;24;1;0;0;24;1098-0121;WOS:000312063700006;;;J;Rhim, Jun-Won;Park, Kwon;Self-similar occurrence of massless Dirac particles in graphene under a;magnetic field;PHYSICAL REVIEW B;86;23;235411;10.1103/PhysRevB.86.235411;DEC 10 2012;2012;Intricate interplay between the periodicity of the lattice structure and;that of the cyclotron motion gives rise to a well-known self-similar;fractal structure of the energy eigenvalue, known as the Hofstadter;butterfly, for an electron moving in lattice under magnetic field.;Connected with the n = 0 Landau level, the central band of the;Hofstadter butterfly is especially interesting in the honeycomb lattice.;While the entire Hofstadter butterfly can be in principle obtained by;solving Harper's equations numerically, the weak-field limit, most;relevant for experiment, is intractable owing to the fact that the size;of the Hamiltonian matrix, which needs to be diagonalized, diverges. In;this paper, we develop an effective Hamiltonian method that can be used;to provide an accurate analytic description of the central Hofstadter;band in the weak-field regime. One of the most important discoveries;obtained in this work is that massless Dirac particles always exist;inside the central Hofstadter band no matter how small the magnetic flux;may become. In other words, with its bandwidth broadened by the lattice;effect, the n = 0 Landau level contains massless Dirac particles within;itself. In fact, by carefully analyzing the self-similar recursive;pattern of the central Hofstadter band, we conclude that massless Dirac;particles should occur under arbitrary magnetic field. As a corollary,;the central Hofstadter band also contains a self-similar structure of;recursive Landau levels associated with such massless Dirac particles.;To assess the experimental feasibility of observing massless Dirac;particles inside the central Hofstadter band, we compute the width of;the central Hofstadter band as a function of magnetic field in the;weak-field regime.;5;0;0;0;5;1098-0121;WOS:000312064700008;;;J;Robinson, Zachary R.;Tyagi, Parul;Mowll, Tyler R.;Ventrice, Carl A., Jr.;Hannon, James B.;Argon-assisted growth of epitaxial graphene on Cu(111);PHYSICAL REVIEW B;86;23;235413;10.1103/PhysRevB.86.235413;DEC 10 2012;2012;The growth of graphene by catalytic decomposition of ethylene on Cu(111);in an ultrahigh vacuum system was investigated with low-energy electron;diffraction, low-energy electron microscopy, and atomic force;microscopy. Attempts to form a graphene overlayer using ethylene at;pressures as high as 10 mTorr and substrate temperatures as high as 900;degrees C resulted in almost no graphene growth. By using an argon;overpressure, the growth of epitaxial graphene on Cu(111) was achieved.;The suppression of graphene growth without the use of an argon;overpressure is attributed to Cu sublimation at elevated temperatures.;During the initial stages of growth, a random distribution of rounded;graphene islands is observed. The predominant rotational orientation of;the islands is within +/- 1 degrees of the Cu(111) substrate lattice.;Robinson, Zachary/B-5128-2013;11;1;0;0;11;1098-0121;WOS:000312064700010;;;J;Sheps, Tatyana;Brocious, Jordan;Corso, Brad L.;Guel, O. Tolga;Whitmore, Desire;Durkaya, Goeksel;Potma, Eric O.;Collins, Philip G.;Four-wave mixing microscopy with electronic contrast of individual;carbon nanotubes;PHYSICAL REVIEW B;86;23;235412;10.1103/PhysRevB.86.235412;DEC 10 2012;2012;We review an extensive study of the factors that influence the intensity;of coherent, nonlinear four-wave mixing (FWM) in carbon nanotubes, with;particular attention to the variability inherent to single-walled carbon;nanotubes (SWNTs). Through a combination of spatial imaging and;spectroscopy applied to hundreds of individual SWNTs in optoelectronic;devices, the FWM response is shown to vary systematically with;free-carrier concentration. This dependence is manifested both in the;intrinsic SWNT band structure and also by extrinsic and environmental;effects. We demonstrate the sensitivity of the SWNT FWM signal by;investigating SWNTs transferred from one substrate to another, before;and after the introduction of chemical damage, and with chemical and;electrostatic doping. The results demonstrate FWM as a sensitive;technique for interrogating SWNT optoelectronic properties.;3;0;0;0;3;1098-0121;WOS:000312064700009;;;J;Tian, Zhiting;Esfarjani, Keivan;Chen, Gang;Enhancing phonon transmission across a Si/Ge interface by atomic;roughness: First-principles study with the Green's function method;PHYSICAL REVIEW B;86;23;235304;10.1103/PhysRevB.86.235304;DEC 10 2012;2012;Knowledge on phonon transmittance as a function of phonon frequency and;incidence angle at interfaces is vital for multiscale modeling of heat;transport in nanostructured materials. Although thermal conductivity;reduction in nanostructured materials can usually be described by phonon;scattering due to interface roughness, we show how a Green's function;method in conjunction with the Landauer formalism suggests that;interface roughness induced by atomic mixing can increase phonon;transmission and interfacial thermal conductance. This is an attempt to;incorporate first-principles force constants derived from ab initio;density-functional theory (DFT) into Green's function calculation for;infinitely large three-dimensional crystal structure. We also;demonstrate the importance of accurate force constants by comparing the;phonon transmission and thermal conductance using force constants;obtained from semiempirical Stillinger-Weber potential and;first-principles DFT calculations.;Chen, Gang/J-1325-2014;Chen, Gang/0000-0002-3968-8530;14;0;0;0;14;1098-0121;WOS:000312064700004;;;J;Uhm, Sang Hoon;Yeom, Han Woong;Electron-phonon interaction of one-dimensional and two-dimensional;surface states in indium adlayers on the Si(111) surface;PHYSICAL REVIEW B;86;24;245408;10.1103/PhysRevB.86.245408;DEC 10 2012;2012;We performed angle-resolved photoelectron spectroscopy measurements on;one-and two-dimensional (1D and 2D) metallic surface states in indium;layers on the Si(111) surface as a function of temperature. The;temperature dependence of surface-state energy widths was used to;estimate the electron-phonon coupling constant lambda. The 2D metallic;surface states of the root 7 x root 3-In layer above one monolayer;exhibit lambda = 0.8 similar to 1.0, similar to the value of bulk indium;0.9. This is discussed in the light of a recent structure model with a;double indium layer and the relatively high superconducting transition;temperature of this surface. On the other hand, the lambda's of two 1D;surface states of the 4 x 1-In surface with one monolayer of indium are;much higher than that of root 7 x root 3-In, reaching 1.8, which is the;largest ever reported for a surface state. The origin of the enhanced;electron-phonon coupling and its relationship to the charge-density-wave;phase transition of this surface are discussed. DOI:;10.1103/PhysRevB.86.245408;1;0;0;0;1;1098-0121;WOS:000312065400008;;;J;Vekilova, O. Yu.;Simak, S. I.;Ponomareva, A. V.;Abrikosov, I. A.;Influence of Ni on the lattice stability of Fe-Ni alloys at multimegabar;pressures;PHYSICAL REVIEW B;86;22;224107;10.1103/PhysRevB.86.224107;DEC 10 2012;2012;The lattice stability trends of the primary candidate for Earth's core;material, the Fe-Ni alloy, were examined from first principles. We;employed the exact muffin-tin orbital method (EMTO) combined with the;coherent potential approximation (CPA) for the treatment of alloying;effects. It was revealed that high pressure reverses the trend in the;relative stabilities of the body-centered cubic (bcc), face-centered;cubic (fcc), and hexagonal close-packed (hcp) phases observed at ambient;conditions. In the low pressure region the increase of Ni concentration;in the Fe-Ni alloy enhances the bcc phase destabilization relative to;the more close-packed fcc and hcp phases. However, at 300 GPa (Earth's;core pressure), the effect of Ni addition is opposite. The reverse of;the trend is associated with the suppression of the ferromagnetism of Fe;when going from ambient pressures to pressure conditions corresponding;to those of Earth's core. The first-principles results are explained in;the framework of the canonical band model.;0;0;0;0;0;1098-0121;WOS:000312064300001;;;J;Wang, Kang;Light wave states in quasiperiodic metallic structures;PHYSICAL REVIEW B;86;23;235110;10.1103/PhysRevB.86.235110;DEC 10 2012;2012;We investigate the light wave states in the octagonal and decagonal;quasiperiodic metallic structures by considering their respective;approximants at different orders. The mechanisms underlying the light;wave behaviors are studied in relation to various structure parameters;and configurations. We show that the formation of the first passbands,;that delimit the photonic band gaps and determine the plasma gaps,;involves only the lowest frequency resonance modes inside the fat tiles,;and that light localization occurs due to resonances in high symmetry;local centers as well as in the fragments of such centers, formed by the;skinny tiles. The structure filling rate affects the localized state;frequencies relative to the first passbands, as well as the plasma;frequency levels, by modulating the frequency levels of the resonance;modes and the widths of the passbands. The results of this study can be;generalized to other metallic quasiperiodic and related structures.;1;0;0;0;1;1098-0121;WOS:000312064700001;;;J;Singh, Shashi B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M. H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.;Correlation between p-type conductivity and electronic structure of;Cr-deficient CuCr1-xO2 (x = 0-0.1);PHYSICAL REVIEW B;86;24;241103;10.1103/PhysRevB.86.241103;DEC 7 2012;2012;The correlation between the p-type hole conduction and the electronic;structures of Cr-deficient CuCr1-xO2 (x = 0-0.1) compounds was;investigated using O K-, Cu, and Cr L-3,L-2-edge x-ray absorption;near-edge structure (XANES), scanning photoelectron microscopy, and;x-ray emission spectroscopy measurements. XANES spectra reveal a gradual;increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr;deficiency x, whereas, the valence of Cr remains constant as Cr3+. These;results indicate that the p-type conductivity in the CuCr1-xO2 samples;is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct;Cu1+-O-Cu2+ holemechanism. Remarkable Cr-deficiency-induced changes in;the densities of Cu 3d, Cu 3d-O 2p, andO2p states at or near the;valence-band maximum or the Fermi level were also observed. In addition,;a crossover of conductionmechanism from thermally activated (TA) hopping;to a combination of TA and Mott's three-dimensional variable range;hopping occurs around 250 K.;Yamane, Hiroyuki/K-5297-2013;0;0;0;0;0;1098-0121;WOS:000312025700004;;;J;Bossy, Jacques;Ollivier, Jacques;Schober, Helmut;Glyde, H. R.;Excitations of amorphous solid helium;PHYSICAL REVIEW B;86;22;224503;10.1103/PhysRevB.86.224503;DEC 7 2012;2012;We present neutron scattering measurements of the dynamic structure;factor S(Q,omega) of amorphous solid helium confined in 47-angstrom pore;diameter MCM-41 at pressure 48.6 bars. At low temperature T = 0.05 K, we;observe S(Q,omega) of the confined quantum amorphous solid plus the bulk;polycrystalline solid between the MCM-41 powder grains. No liquidlike;phonon-roton modes, other sharply defined modes at low energy (omega <;1.0 meV), or modes unique to a quantum amorphous solid that might;suggest superflow are observed. Rather, the S(Q, omega) of confined;amorphous and bulk polycrystalline solid appear to be very similar. At;higher temperature (T > 1 K), the amorphous solid in the MCM-41 pores;melts to a liquid which has a broad S(Q,omega) peaked near omega similar;or equal to 0, characteristic of normal liquid He-4 under pressure.;Expressions for the S(Q,omega) of amorphous and polycrystalline solid;helium are presented and compared. In previous measurements of liquid;He-4 confined in MCM-41 at lower pressure, the intensity in the liquid;roton mode decreases with increasing pressure until the roton vanishes;at the solidification pressure (38 bars), consistent with no roton in;the solid observed here.;2;0;0;0;2;1098-0121;WOS:000321857700002;;;J;Joly, Yves;Collins, S. P.;Grenier, Stephane;Tolentino, Helio C. N.;De Santis, Maurizio;Birefringence and polarization rotation in resonant x-ray diffraction;PHYSICAL REVIEW B;86;22;220101;10.1103/PhysRevB.86.220101;DEC 7 2012;2012;Birefringence can contribute to x-ray resonant Bragg diffraction and;likely explains recent novel data collected on CuO. We prove these;statements using ab initio simulations which reproduce the experimental;polarization effects quantitatively. We show that an unrotated;polarization signal-ruled out in resonant magnetic scattering within the;electric dipole approximation-arises from the dynamic change in;polarization inside the material. We are able to reproduce all the;related behavior with circular polarization and its dependence on the;angle of rotation about the Bragg wave vector. We provide a tool to;disentangle the various physical origins of the polarization rotation,;providing a more complete understanding of the illuminated material.;TOLENTINO, HELIO/J-1894-2014; Grenier, Stephane/N-1986-2014;TOLENTINO, HELIO/0000-0003-4032-5988; Grenier,;Stephane/0000-0001-8370-7375;12;1;0;0;12;1098-0121;WOS:000321857700001;;;J;Kovacs, Istvan A.;Igloi, Ferenc;Cardy, John;Corner contribution to percolation cluster numbers;PHYSICAL REVIEW B;86;21;214203;10.1103/PhysRevB.86.214203;DEC 7 2012;2012;We study the number of clusters in two-dimensional (2d) critical;percolation, N-Gamma, which intersect a given subset of bonds, Gamma. In;the simplest case, when Gamma is a simple closed curve, N-Gamma is;related to the entanglement entropy of the critical diluted quantum;Ising model, in which Gamma represents the boundary between the;subsystem and the environment. Due to corners in Gamma there are;universal logarithmic corrections to N-Gamma, which are calculated in;the continuum limit through conformal in-variance, making use of the;Cardy-Peschel formula. The exact formulas are confirmed by large scale;Monte Carlo simulations. These results are extended to anisotropic;percolation where they confirm a result of discrete holomorphicity.;Kovacs, Istvan/A-8447-2013;5;0;0;0;5;1098-0121;WOS:000312023100003;;;J;Komsa, Hannu-Pekka;Krasheninnikov, Arkady V.;Effects of confinement and environment on the electronic structure and;exciton binding energy of MoS2 from first principles;PHYSICAL REVIEW B;86;24;241201;10.1103/PhysRevB.86.241201;DEC 7 2012;2012;Using GW first-principles calculations for few-layer and bulk MoS2, we;study the effects of quantum confinement on the electronic structure of;this layered material. By solving the Bethe-Salpeter equation, we also;evaluate the exciton energy in these systems. Our results are in;excellent agreement with the available experimental data. Exciton;binding energy is found to dramatically increase from 0.1 eV in the bulk;to 1.1 eV in the monolayer. The fundamental band gap increases as well,;so that the optical transition energies remain nearly constant. We also;demonstrate that environments with different dielectric constants have a;profound effect on the electronic structure of the monolayer. Our;results can be used for engineering the electronic properties of MoS2;and other transition-metal dichalcogenides and may explain the;experimentally observed variations in the mobility of monolayer MoS2.;Krasheninnikov, Arkady/M-3020-2013;Krasheninnikov, Arkady/0000-0003-0074-7588;50;4;0;0;50;1098-0121;WOS:000312025700003;;;J;Ciuchi, S.;Fratini, S.;Electronic transport and quantum localization effects in organic;semiconductors;PHYSICAL REVIEW B;86;24;245201;10.1103/PhysRevB.86.245201;DEC 7 2012;2012;We explore the charge transport mechanism in organic semiconductors;based on a model that accounts for the thermal intermolecular disorder;at work in pure crystalline compounds, as well as extrinsic sources of;disorder that are present in current experimental devices. Starting from;the Kubo formula, we describe a theoretical framework that relates the;time-dependent quantum dynamics of electrons to the frequency-dependent;conductivity. The electron mobility is then calculated through a;relaxation time approximation that accounts for quantum localization;corrections beyond Boltzmann theory, and allows us to efficiently;address the interplay between highly conducting states in the band range;and localized states induced by disorder in the band tails. The;emergence of a "transient localization" phenomenon is shown to be a;general feature of organic semiconductors that is compatible with the;bandlike temperature dependence of the mobility observed in pure;compounds. Carrier trapping by extrinsic disorder causes a crossover to;a thermally activated behavior at low temperature, which is;progressively suppressed upon increasing the carrier concentration, as;is commonly observed in organic field-effect transistors. Our results;establish a direct connection between the localization of the electronic;states and their conductive properties, formalizing phenomenological;considerations that are commonly used in the literature.;Fratini, Simone/A-4692-2009;Fratini, Simone/0000-0002-4750-3241;4;0;0;0;4;1098-0121;WOS:000312025700001;;;J;Huang, Bing;Lee, Hoonkyung;Defect and impurity properties of hexagonal boron nitride: A;first-principles calculation;PHYSICAL REVIEW B;86;24;245406;10.1103/PhysRevB.86.245406;DEC 7 2012;2012;In this paper, we have systematically studied the structural and;electronic properties of vacancy defects and carbon impurity in;hexagonal boron nitride (h-BN) by using both normal GGA calculations and;advanced hybrid functional calculations. Our calculations show that the;defect configurations and the local bond lengths around defects are;sensitive to their charge states. The highest negative defect charge;states are largely determined by the nearly-free-electron state at the;conduction band minimum of BN. Generally, the in-gap defect levels;obtained from hybrid functional calculations are much deeper than those;obtained from normal GGA calculations. The formation energies of neutral;defects calculated by hybrid functional and GGA are close to each other,;but the defect transition energy levels are quite different between GGA;and hybrid functional calculations. Finally, we show that the charged;defect configurations as well as the transition energy levels exhibit;interesting layer effects.;Huang, Bing/D-8941-2011;Huang, Bing/0000-0001-6735-4637;8;0;0;0;8;1098-0121;WOS:000312025700002;;;J;Maassen, T.;Vera-Marun, I. J.;Guimaraes, M. H. D.;van Wees, B. J.;Contact-induced spin relaxation in Hanle spin precession measurements;PHYSICAL REVIEW B;86;23;235408;10.1103/PhysRevB.86.235408;DEC 7 2012;2012;In the field of spintronics the "conductivity mismatch" problem remains;an important issue. Here the difference between the resistance of;ferromagnetic electrodes and a (high resistive) transport channel causes;injected spins to be backscattered into the leads and to lose their spin;information. We study the effect of the resulting contact-induced spin;relaxation on spin transport, in particular on nonlocal Hanle precession;measurements. As the Hanle line shape is modified by the contact-induced;effects, the fits to Hanle curves can result in incorrectly determined;spin transport properties of the transport channel. We quantify this;effect that mimics a decrease of the spin relaxation time of the channel;reaching more than four orders of magnitude and a minor increase of the;diffusion coefficient by less than a factor of two. Then we compare the;results to spin transport measurements on graphene from the literature.;We further point out guidelines for a Hanle precession fitting procedure;that allows the reliable extraction of spin transport properties from;measurements.;Vera-Marun, Ivan/A-4704-2013; Guimaraes, Marcos/K-1940-2013;Vera-Marun, Ivan/0000-0002-6347-580X;;14;1;0;0;14;1098-0121;WOS:000312024900002;;;J;Murch, K. W.;Ginossar, E.;Weber, S. J.;Vijay, R.;Girvin, S. M.;Siddiqi, I.;Quantum state sensitivity of an autoresonant superconducting circuit;PHYSICAL REVIEW B;86;22;220503;10.1103/PhysRevB.86.220503;DEC 7 2012;2012;When a frequency chirped excitation is applied to a classical high-Q;nonlinear oscillator, its motion becomes dynamically synchronized to the;drive and large oscillation amplitude is observed, provided the drive;strength exceeds the critical threshold for autoresonance. We;demonstrate that when such an oscillator is strongly coupled to a;quantized superconducting qubit, both the effective nonlinearity and the;threshold become a nontrivial function of the qubit-oscillator detuning.;Moreover, the autoresonant threshold is dependent on the quantum state;of the qubit and may be used to realize a high-fidelity, latching;readout whose speed is not limited by the oscillator Q.;1;0;0;0;1;1098-0121;WOS:000312024300001;;;J;Ondrejkovic, P.;Kempa, M.;Vysochanskii, Y.;Saint-Gregoire, P.;Bourges, P.;Rushchanskii, K. Z.;Hlinka, J.;Neutron scattering study of ferroelectric Sn2P2S6 under pressure;PHYSICAL REVIEW B;86;22;224106;10.1103/PhysRevB.86.224106;DEC 7 2012;2012;Ferroelectric phase transition in the semiconductor Sn2P2S6 single;crystal has been studied by means of neutron scattering in the;pressure-temperature range adjacent to the anticipated tricritical;Lifshitz point (p approximate to 0.18 GPa, T approximate to 296 K). The;observations reveal a direct ferroelectric-paraelectric phase transition;in the whole investigated pressure range (0.18-0.6 GPa). These results;are in a clear disagreement with phase diagrams assumed in numerous;earlier works, according to which a hypothetical intermediate;incommensurate phase extends over several or even tens of degrees in the;0.5 GPa pressure range. Temperature dependence of the anisotropic;quasielastic diffuse scattering suggests that polarization fluctuations;present above T-C are strongly reduced in the ordered phase. Still, the;temperature dependence of the ((2) over bar 00) Bragg reflection;intensity at p = 0.18 GPa can be remarkably well modeled assuming the;order-parameter amplitude growth according to the power law with;logarithmic corrections predicted for a uniaxial ferroelectric;transition at the tricritical Lifshitz point.;Hlinka, Jiri/G-5985-2014; Ondrejkovic, Petr/G-6654-2014; Kempa, Martin/G-8830-2014;1;0;0;0;1;1098-0121;WOS:000312024300002;;;J;Svindrych, Z.;Janu, Z.;Kozlowski, A.;Honig, J. M.;Low-temperature magnetic anomaly in magnetite;PHYSICAL REVIEW B;86;21;214406;10.1103/PhysRevB.86.214406;DEC 7 2012;2012;We have studied experimentally the responses of high-quality single;crystals of stoichiometric synthetic magnetite to applied weak dc and ac;magnetic fields in the range of 6-60 K, far below the Verwey transition.;The results can be compared to so-called magnetic after effects (MAE);measurements, which are the most extensive magnetic measurements of;magnetite at these temperatures. We present a novel point of view on the;relaxation phenomena encountered at these temperatures-the;low-temperature anomaly, addressing the striking difference between the;results of conventional ac susceptibility measurements and those;accompanying MAE measurements, i.e., periodic excitations with strong;magnetic pulses. We also draw a connection between this anomaly and the;so-called glasslike transition, and discuss possible mechanisms;responsible for these effects.;janu, zdenek/G-9113-2014;0;0;0;0;0;1098-0121;WOS:000312023100001;;;J;Tarantini, C.;Lee, S.;Kametani, F.;Jiang, J.;Weiss, J. D.;Jaroszynski, J.;Folkman, C. M.;Hellstrom, E. E.;Eom, C. B.;Larbalestier, D. C.;Artificial and self-assembled vortex-pinning centers in superconducting;Ba(Fe1-xCox)(2)As-2 thin films as a route to obtaining very high;critical-current densities;PHYSICAL REVIEW B;86;21;214504;10.1103/PhysRevB.86.214504;DEC 7 2012;2012;We report on the superior vortex pinning of single-and multilayer;Ba(Fe1-xCox)(2)As-2 thin films with self-assembled c-axis and;artificially introduced ab-plane pins. Ba(Fe1-xCox)(2)As-2 can accept a;very high density of pins (15-20 vol %) without T-c suppression. The;matching field is greater than 12 T, producing a significant enhancement;of the critical current density J(c), an almost isotropic J(c) (theta,;20 T) > 10(5) A/cm(2), and global pinning force density F-p of similar;to 50 GN/m(3). This scenario strongly differs from the high-temperature;superconducting cuprates where the addition of pins without Tc;suppression is limited to 2-4 vol %, leading to small H-Irr enhancements;and improved J(c) only below 3-5 T.;Lee, Sanghan/C-8876-2012; Eom, Chang-Beom/I-5567-2014;7;2;0;0;7;1098-0121;WOS:000312023100002;;;J;Xia, Junchao;Carter, Emily A.;Density-decomposed orbital-free density functional theory for covalently;bonded molecules and materials;PHYSICAL REVIEW B;86;23;235109;10.1103/PhysRevB.86.235109;DEC 7 2012;2012;We propose a density decomposition scheme using a Wang-Govind-Carter-;(WGC-) based kinetic energy density functional (KEDF) to accurately and;efficiently simulate various covalently bonded molecules and materials;within orbital-free (OF) density functional theory (DFT). By using a;local, density-dependent scale function, the total density is decomposed;into a highly localized density within covalent bond regions and a;flattened delocalized density, with the former described by semilocal;KEDFs and the latter treated by the WGC KEDF. The new model predicts;reasonable equilibrium volumes, bulk moduli, and phase-ordering energies;for various semiconductors compared to Kohn-Sham (KS) DFT benchmarks.;The decomposition formalism greatly improves numerical stability and;accuracy, while retaining computational speed compared to simply;applying the original WGC KEDF to covalent materials. The surface energy;of Si(100) and various diatomic molecule properties can be stably;calculated and also agree well with KSDFT benchmarks. This;linear-scaled, computationally efficient, density-partitioned,;multi-KEDF scheme opens the door to large-scale simulations of;molecules, semiconductors, and insulators with OFDFT.;7;0;0;0;7;1098-0121;WOS:000312024900001;;;J;Zhao, Yang;Gong, Shou-Shu;Wang, Yong-Jun;Su, Gang;Low-energy effective theory and two distinct critical phases in a;spin-1/2 frustrated three-leg spin tube;PHYSICAL REVIEW B;86;22;224406;10.1103/PhysRevB.86.224406;DEC 7 2012;2012;Motivated by the crystal structures of [(CuCl(2)tachH)(3)Cl]Cl-2 and;Ca3Co2O6, we develop a low-energy effective theory using the;bosonization technique for a spin-1/2 frustrated three-leg spin tube;with trigonal prism units in two limit cases. The features obtained with;the effective theory are numerically elucidated by the density matrix;renormalization group method. Three different quantum phases in the;ground state of the system, say, one gapped dimerized phase and two;distinct gapless phases, are identified, where the two gapless phases;are found to have the conformal central charge c = 1 and 3/2,;respectively. Spin gaps, spin and dimer correlation functions, and the;entanglement entropy are obtained. In particular, it is disclosed that;the critical phase with c = 3/2 is the consequence of spin frustrations,;which might belong to the SU(2)(k=2) Wess-Zumino-Witten-Novikov;universality class, and is induced by the twist term in the bosonized;Hamiltonian density.;Su, Gang/G-6092-2011;Su, Gang/0000-0002-8149-4342;1;1;0;0;1;1098-0121;WOS:000312024300003;;;J;Vucicevic, J.;Goerbig, M. O.;Milovanovic, M. V.;d-wave superconductivity on the honeycomb bilayer;PHYSICAL REVIEW B;86;21;214505;10.1103/PhysRevB.86.214505;DEC 7 2012;2012;We introduce a microscopic model on the honeycomb bilayer, which in the;small-momentum limit captures the usual (quadratic dispersion in the;kinetic term) description of bilayer graphene. In the limit of strong;interlayer hopping it reduces to an effective honeycomb monolayer model;with also third-neighbor hopping. We study interaction effects in this;effective model, focusing on possible superconducting instabilities. We;find d(x2-y2) superconductivity in the strong-coupling limit of an;effective tJ -model-like description that gradually transforms into d +;id time-reversal symmetry-breaking superconductivity at weak couplings.;In this limit the small-momentum order-parameter expansion is (k(x) +;ik(y) )(2) [or (k(x) + ik(y) )(2)] in both valleys of the effective;low-energy description. The relevance of our model and investigation for;the physics of bilayer graphene is also discussed.;5;0;0;0;5;1098-0121;WOS:000312023100004;;;J;Etzioni, Yoav;Horovitz, Baruch;Le Doussal, Pierre;Rings and Coulomb boxes in dissipative environments;PHYSICAL REVIEW B;86;23;235406;10.1103/PhysRevB.86.235406;DEC 6 2012;2012;We study a particle on a ring in the presence of a dissipative;Caldeira-Leggett environment and derive its response to a dc field. We;show how this non-equilibrium response is related to a flux averaged;equilibrium response. We find, through a two-loop renormalization group;analysis, that a large dissipation parameter eta flows to a fixed point;eta(R) = (h) over bar/(2 pi). We also reexamine the mapping of this;problem to that of the Coulomb box and show that the relaxation;resistance, of recent interest, is quantized for large eta. For finite;eta > eta(R) we find that a certain average of the relaxation resistance;is quantized. We propose a Coulomb-box experiment to measure a quantized;noise. DOI: 10.1103/PhysRevB.86.235406;1;0;0;0;1;1098-0121;WOS:000312024600004;;;J;Fontana, Yannik;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;
12:355:4 Effect of guided resonance modes on emission from GaN core-shell nanorod arrays
DOI:10.1007/s00339-014-8602-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Anderson, P. Duke;Lin, Chenxi;Povinelli, Michelle L.;
12:356:1 On ternary nitride substrates for visible semiconductor light-emitters
DOI:10.1063/1.3425885 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Sharma, T. K.;Towe, E.;
12:356:2 Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm
DOI:10.1063/1.3280033 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Sharma, T. K.;Towe, E.;
12:356:3 Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates
DOI:10.1063/1.4774290 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kotani, Teruhisa;Lugli, Paolo;Hamaguchi, Chihiro;
12:356:4 Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
DOI:10.1063/1.4895067 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Daeubler, J.;Passow, T.;Aidam, R.;Koehler, K.;Kirste, L.;Kunzer, M.;Wagner, J.;
12:356:5 Thermodynamic analysis on HVPE growth of InGaN ternary alloy
DOI:10.1016/j.jcrysgro.2010.11.079 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Hanaoka, Koshi;Murakami, Hisashi;Kumagai, Yoshinao;Koukitu, Akinori;
12:356:6 High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2015.04.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Togashi, Rie;Thieu, Quang Tu;Murakami, Hisashi;Kumagai, Yoshinao;Ishitani, Yoshihiro;Monemar, Bo;Koukitu, Akinori;
12:357:1 Surface plasmon-enhanced gas sensing in single gold-peapodded silica nanowires
DOI:10.1038/am.2013.17 JN:NPG ASIA MATERIALS PY:2013
TC:4 AU: Wang, Sheng-Bo;Huang, Yi-Fan;Chattopadhyay, Surojit;Chang, Shoou Jinn;Chen, Ruei-San;Chong, Cheong-Wei;Hu, Ming-Shien;Chen, Li-Chyong;Chen, Kuei-Hsien;
12:357:2 Silicon-on-insulator based ZnO nanowire photodetector
DOI:10.1116/1.4759261 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Xie, Yong;Madel, Manfred;Neuschl, Benjamin;Jie, Wanqi;Roeder, Uwe;Feneberg, Martin;Thonke, Klaus;
12:357:3 Local vapor transport synthesis of zinc oxide nanowires for ultraviolet-enhanced gas sensing
DOI:10.1088/0957-4484/21/49/495502 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Luo, Lei;Sosnowchik, Brian D.;Lin, Liwei;
12:357:4 Photoconduction and the electronic structure of silica nanowires embedded with gold nanoparticles
DOI:10.1103/PhysRevB.84.165412 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Pao, C. -W.;Wu, C. -T.;Tsai, H. -M.;Liu, Y. -S.;Chang, C. -L.;Pong, W. F.;Chiou, J. -W.;Chen, C. -W.;Hu, M. -S.;Chu, M. -W.;Chen, L. -C.;Chen, C. -H.;Chen, K. -H.;Wang, S. -B.;Chang, S. -J.;Tsai, M. -H.;Lin, H. -J.;Lee, J. -F.;Guo, J. -H.;
12:357:5 Anisotropic surface plasmon excitation in Au/silica nanowire
DOI:10.1063/1.3456529 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Wu, Chien-Ting;Chu, Ming-Wen;Wang, Sheng-Bo;Hu, Ming-Shien;Chen, Kuei-Hsien;Chen, Li-Chyong;Chen, Chun-Wei;Chen, Cheng-Hsuan;
12:357:6 Surface plasmon enhanced photoconductance and single electron effects in mesoporous titania nanofibers loaded with gold nanoparticles
DOI:10.1063/1.3291052 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Son, Min-Soo;Im, Ji-Eun;Wang, Kang-Kyun;Oh, Seung-Lim;Kim, Yong-Rok;Yoo, Kyung-Hwa;
12:358:1 Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure
DOI:10.1063/1.4845495 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Wen, Jing;Zhang, Xitian;Gao, Hong;Wang, Mingjiao;
12:358:2 Analysis of strained double-lightly doped MOSCNT using NEGF
DOI:10.1007/s00339-012-7059-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Aziziyan, Mohammad Reza;Moghadam, Narjes;Fathi, Davood;Ahmadi, Vahid;
12:358:3 Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach
DOI:10.1063/1.4893581 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, H.;Li, G.;
12:358:4 A new method for the analysis of transmission property in carbon nanotubes using Green's function
DOI:10.1007/s00339-010-5909-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:2 AU: Fathi, Davood;Forouzandeh, Behjat;Sarvari, Reza;
12:358:5 Design and simulation of double-lightly doped MOSCNT using non-equilibrium Green's function
DOI:10.1007/s00339-012-6926-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Moghadam, Narjes;Aziziyan, Mohammad Reza;Fathi, Davood;
12:358:6 A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
DOI:10.1063/1.4820390 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Seoane, N.;Martinez, A.;
12:358:7 A new model for deformed carbon nanotubes using Green's function
DOI:10.1007/s00339-011-6521-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:0 AU: Fathi, Davood;Sarvari, Reza;
12:358:8 Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
DOI:10.1063/1.3691184 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Liao, Ta-Chuan;Kang, Tsung-Kuei;Lin, Chia-Min;Wu, Chun-Yu;Cheng, Huang-Chung;
12:359:1 Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
DOI:10.1063/1.4790591 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Wilsch, Benjamin;Jahn, Uwe;Jenichen, Bernd;Laehnemann, Jonas;Grahn, Holger T.;Wang, Hui;Yang, Hui;
12:359:2 Effect of antimony on growth mode and properties of thick InGaN layers
DOI:10.1016/j.jcrysgro.2014.10.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Koch, Holger;Pietzonka, Ines;Galler, Bastian;Strassburg, Martin;Kalisch, Holger;Vescan, Andrei;Lugauer, Hans-Juergen;
12:359:3 Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells
DOI:10.1116/1.4889857 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Yang, Jing;Zhao, Degang;Jiang, Desheng;Chen, Ping;Zhu, Jianjun;Liu, Zongshun;Le, Lingcong;He, Xiaoguang;Li, Xiaojing;Wang, Hui;Yang, Hui;Jahn, Uwe;
12:359:4 InGaN: Direct correlation of nanoscopic morphology features with optical and structural properties
DOI:10.1063/1.4893663 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Koch, Holger;Bertram, Frank;Pietzonka, Ines;Ahl, Jan-Philipp;Strassburg, Martin;August, Olga;Christen, Juergen;Kalisch, Holger;Vescan, Andrei;Lugauer, Hans-Juergen;
12:359:5 Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness
DOI:10.1063/1.4827179 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Dobrovolskas, D.;Vaitkevicius, A.;Mickevicius, J.;Tuna, Oe.;Giesen, C.;Heuken, M.;Tamulaitis, G.;
12:359:6 Effect of surfactant Sb on In incorporation and thin film morphology of InGaN layers grown by organometallic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2013.04.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Merrell, Jason L.;Liu, Feng;Stringfellow, Gerald B.;
12:359:7 Optical absorption dependence on composition and thickness of InxGa1-xN (0.05 < x < 0.22) grown on GaN/sapphire
DOI:10.1016/j.tsf.2012.07.003 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Jampana, Balakrishnam R.;Weiland, Conan R.;Opila, Robert L.;Ferguson, Ian T.;Honsberg, Christiana B.;
12:360:1 Catalyzed oxidation for nanowire growth
DOI:10.1088/0957-4484/25/14/145603 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Tai, Kaiping;Sun, Ke;Huang, Bo;Dillon, Shen J.;
12:360:2 In Situ TEM Creation and Electrical Characterization of Nanowire Devices
DOI:10.1021/nl300704u JN:NANO LETTERS PY:2012
TC:4 AU: Kallesoe, Christian;Wen, Cheng-Yen;Booth, Timothy J.;Hansen, Ole;Boggild, Peter;Ross, Frances M.;Molhave, Kristian;
12:360:3 Measurement of Local Si-Nanowire Growth Kinetics Using In situ Transmission Electron Microscopy of Heated Cantilevers
DOI:10.1002/smll.200902187 JN:SMALL PY:2010
TC:10 AU: Kallesoe, Christian;Wen, Cheng-Yen;Molhave, Kristian;Boggild, Peter;Ross, Frances M.;
12:360:4 Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
DOI:10.1116/1.3268135 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Kallesoe, Christian;Molhave, Kristian;Larsen, Kasper F.;Engstrom, Daniel;Hansen, Torben M.;Boggild, Peter;Martensson, Thomas;Borgstrom, Magnus;Samuelson, Lars;
12:360:5 Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling
DOI:10.1088/0957-4484/21/40/405304 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Lei, Anders;Petersen, Dirch Hjorth;Booth, Timothy John;Homann, Lasse Vinther;Kallesoe, Christian;Sukas, Ozlem Sardan;Gyrsting, Yvonne;Molhave, Kristian;Boggild, Peter;
12:360:6 Thermo mechanical properties and plastic deformation of gold nanolines and gold thin films
DOI:10.1016/j.msea.2011.04.041 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2011
TC:7 AU: Olliges, Sven;Frank, Stephan;Gruber, Patric A.;Auzelyte, Vaida;Solak, Harun;Spolenak, Ralph;
12:361:1 Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate
DOI:10.1063/1.3522830 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Kumar, Praveen;Kuyyalil, Jithesh;Shivaprasad, S. M.;
12:361:2 (7x7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface
DOI:10.1063/1.3490250 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Kumar, Praveen;Kumar, Mahesh;Shivaprasad, S. M.;
12:361:3 Kinetically controlled growth of gallium on stepped Si (553) surface
DOI:10.1016/j.apsusc.2013.07.071 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Kumar, Mukesh;Pasha, Syed Khalid;Govind;
12:361:4 Residual thermal desorption studies of Ga adatoms on trenched Si(5512) surface
DOI:10.1016/j.apsusc.2013.05.132 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Kumar, Praveen;Kumar, Mahesh;Shivaprasad, S. M.;
12:361:5 Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence
DOI:10.1016/j.matchemphys.2014.01.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Kumar, Praveen;Kumar, Mahesh;Noetzel, R.;Shivaprasad, S. M.;
12:361:6 In induced reconstructions of Si(111) as superlattice matched epitaxial templates for InN growth
DOI:10.1016/j.materresbull.2012.10.011 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Kuyyalil, Jithesh;Tangi, Malleswararao;Shivaprasad, S. M.;
12:361:7 Evolution of kinetically controlled In-induced surface structure on Si(557) surfacee
DOI:10.1016/j.apsusc.2014.06.163 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Chauhan, Amit Kumar Singh;Eldose, Nirosh M.;Mishra, Monu;Niazi, Asad;Nair, Lekha;Gupta, Govind;
12:362:1 Forward tunneling current in GaN-based blue light-emitting diodes
DOI:10.1063/1.3327332 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Yan, Dawei;Lu, Hai;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;
12:362:2 Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation
DOI:10.1063/1.4902870 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: De Santi, C.;Meneghini, M.;Trivellin, N.;Gerardin, S.;Bagatin, M.;Paccagnella, A.;Meneghesso, G.;Zanoni, E.;
12:362:3 Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
DOI:10.1063/1.4896970 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Maur, M. Auf Der;Galler, B.;Pietzonka, I.;Strassburg, M.;Lugauer, H.;Di Carlo, A.;
12:362:4 Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes
DOI:10.1063/1.4824296 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Yan, Dawei;Jiao, Jinping;Ren, Jian;Yang, Guofeng;Gu, Xiaofeng;
12:362:5 Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes
DOI:10.1063/1.4730772 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Sakowski, Konrad;Marcinkowski, Leszek;Krukowski, Stanislaw;Grzanka, Szymon;Litwin-Staszewska, Elzbieta;
12:362:6 Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
DOI:10.1016/j.tsf.2013.09.026 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Arslan, Engin;Turhan, Sevil;Gokden, Sibel;Teke, Ali;Ozbay, Ekmel;
12:362:7 Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
DOI:10.1063/1.4812231 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Kim, Jaekyun;Tak, Youngjo;Kim, Joosung;Chae, Suhee;Kim, Jun-Youn;Park, Youngsoo;
12:363:1 A study of indium incorporation in In-rich InGaN grown by MOVPE
DOI:10.1016/j.apsusc.2009.11.081 JN:APPLIED SURFACE SCIENCE PY:2010
TC:20 AU: Guo, Y.;Liu, X. L.;Song, H. P.;Yang, A. L.;Xu, X. Q.;Zheng, G. L.;Wei, H. Y.;Yang, S. Y.;Zhu, Q. S.;Wang, Z. G.;
12:363:2 Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
DOI:10.1063/1.3668111 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Liu, S. T.;Wang, X. Q.;Chen, G.;Zhang, Y. W.;Feng, L.;Huang, C. C.;Xu, F. J.;Tang, N.;Sang, L. W.;Sumiya, M.;Shen, B.;
12:363:3 Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium
DOI:10.1016/j.tsf.2013.11.117 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yadav, Brajesh S.;Mohanta, P.;Srinivasa, R. S.;Major, S. S.;
12:363:4 Well width study of InGaN multiple quantum wells for blue-green emitter
DOI:10.1016/j.jcrysgro.2010.09.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Hoffmann, V.;Netzel, C.;Zeimer, U.;Knauer, A.;Einfeldt, S.;Bertram, F.;Christen, J.;Weyers, M.;Traenkle, G.;Kneissl, M.;
12:363:5 Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
DOI:10.1016/j.jcrysgro.2013.12.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Hoffmann, V.;Mogilatenko, A.;Netzel, C.;Zeimer, U.;Einfeldt, S.;Weyers, M.;Kneissl, M.;
12:363:6 Preparation and atomic structure of reconstructed (0001) InGaN surfaces
DOI:10.1063/1.4743000 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Friedrich, C.;Biermann, A.;Hoffmann, V.;Kneissl, M.;Esser, N.;Vogt, P.;
12:363:7 InXGa1-XN films deposited by reactive RF-sputtering
DOI:10.1016/j.jnoncrysol.2012.01.023 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:6 AU: Itoh, Takashi;Hibino, Shun;Sahashi, Tatsuro;Kato, Yoshinori;Koiso, Sunao;Ohashi, Fumitaka;Nonomura, Shuichi;
12:364:1 Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
DOI:10.1063/1.3371812 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Zhu, Di;Noemaun, Ahmed N.;Schubert, Martin F.;Cho, Jaehee;Schubert, E. Fred;Crawford, Mary H.;Koleske, Daniel D.;
12:364:2 Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes
DOI:10.1063/1.3513394 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Lin, Ray-Ming;Lai, Mu-Jen;Chang, Liann-Be;Huang, Chou-Hsiung;
12:364:3 Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates
DOI:10.1063/1.3549160 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Dong, Yanqun;Song, Jae-Ho;Kim, Ho-Jong;Kim, Tae-Soo;Ahn, Byung-Jun;Song, Jung-Hoon;Cho, In-Sung;Im, Won-Taek;Moon, Youngboo;Hwang, Sung-Min;Hong, Soon-Ku;Lee, Seog-Woo;
12:364:4 Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes
DOI:10.1063/1.4764067 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Hager, T.;Bruederl, G.;Lermer, T.;Tautz, S.;Gomez-Iglesias, A.;Mueller, J.;Avramescu, A.;Eichler, C.;Gerhard, S.;Strauss, U.;
12:364:5 Carrier transport in green AlInGaN based structures on c-plane substrates
DOI:10.1063/1.4809833 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Hager, T.;Binder, M.;Bruederl, G.;Eichler, C.;Avramescu, A.;Wurm, T.;Gomez-Iglesias, A.;Stojetz, B.;Tautz, S.;Galler, B.;Gerhard, S.;Zeisel, R.;Strauss, U.;
12:364:6 Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates
DOI:10.1063/1.4774302 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Hong, Moon-Taek;Kim, Tae-Soo;Park, Ki-Nam;Jung, Sukkoo;Chang, Younghak;Bang, Gyu-Hyun;Kim, Hyung-Gu;Jeon, Jina;Choi, Yoon-Ho;Hwang, Sung-Min;Song, Jung-Hoon;
12:365:1 Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
DOI:10.1016/j.solmat.2012.03.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:11 AU: Tran, Binh-Tinh;Chang, Edward-Yi;Trinh, Hai-Dang;Lee, Ching-Ting;Sahoo, Kartika Chandra;Lin, Kung-Liang;Huang, Man-Chi;Yu, Hung-Wei;Luong, Tien-Tung;Chung, Chen-Chen;Nguyen, Chi-Lang;
12:365:2 Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature
DOI:10.1063/1.4903743 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Shang, Z. J.;Zheng, X. H.;Yang, C.;Chen, Y.;Li, B.;Sun, L.;Tang, Z.;Zhao, D. G.;
12:365:3 Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
DOI:10.1063/1.4845715 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Binder, J.;Korona, K. P.;Wysmolek, A.;Kaminska, M.;Koehler, K.;Kirste, L.;Ambacher, O.;Zajac, M.;Dwilinski, R.;
12:365:4 Growth and characterization of InGaN by RF-MBE
DOI:10.1016/j.jcrysgro.2010.10.124 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Kraus, A.;Hammadi, S.;Hisek, J.;Buss, R.;Joenen, H.;Bremers, H.;Rossow, U.;Sakalauskas, E.;Goldhahn, R.;Hangleiter, A.;
12:365:5 The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency
DOI:10.1007/s13391-013-3202-3 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Chung, Chen-Chen;Tran, Binh Tinh;Han, Hau-Vei;Ho, Yen-Teng;Yu, Hung-Wei;Lin, Kung-Liang;Nguyen, Hong-Quan;Yu, Peichen;Kuo, Hao-Chung;Chang, Edward Yi;
12:365:6 Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates
DOI:10.1007/s13391-014-3164-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:1 AU: Binh Tinh Tran;Lin, Kung-Liang;Sahoo, Kartika Chandra;Chung, Chen-Chen;Chi-Lang Nguyen;Chang, Edward Yi;
12:365:7 Effect of the Circle-Grid Electrodes on Concentrated GaAs Solar Cell Efficiency
DOI:10.1007/s13391-014-3201-z JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Chung, Chen-Chen;Binh Tinh Tran;Han, Ming-Hung;Lin, Kung-Liang;Yu, Hung-Wei;Ho, Yen-Teng;Chang, Chun-Yen;Chang, Edward Yi;
12:365:8 Growth of GaN films on circle array patterned Si (111) substrates
DOI:10.1016/j.jcrysgro.2014.01.070 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Lin, Kung-Liang;Binh Tinh Tran;Chung, Chen-Chen;Chang, Edward-Yi;
12:366:1 Novel non-metallic non-acidic approach to generate sub-wavelength surface structures for inline-diffused multicrystalline silicon wafer solar cells
DOI:10.1016/j.apsusc.2014.04.101 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Basu, Prabir Kanti;Chakraborty, Sandipan;Hameiri, Ziv;Boreland, Matthew Benjamin;
12:366:2 Liquid silicate additive for alkaline texturing of mono-Si wafers to improve process bath lifetime and reduce IPA consumption
DOI:10.1016/j.solmat.2013.01.037 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:14 AU: Basu, Prabir Kanti;Sarangi, Debajyoti;Shetty, Kishan Devappa;Boreland, Mathew Benjamin;
12:366:3 Novel selective emitter process using non-acidic etch-back for inline-diffused silicon wafer solar cells
DOI:10.1016/j.renene.2013.11.062 JN:RENEWABLE ENERGY PY:2014
TC:1 AU: Basu, Prabir Kanti;Cunnusamy, Jessen;Sarangi, Debajyoti;Boreland, Mathew Benjamin;
12:366:4 Regulated low cost pre-treatment step for surface texturization of large area industrial single crystalline silicon solar cell
DOI:10.1016/j.solmat.2010.02.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:16 AU: Basu, P. K.;Dhasmana, H.;Udayakumar, N.;Khan, Firoz;Thakur, D. K.;
12:366:5 18.7% Efficient inline-diffused screen-printed silicon wafer solar cells with deep homogeneous emitter etch-back
DOI:10.1016/j.solmat.2013.06.046 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Basu, Prabir Kanti;Hameiri, Ziv;Sarangi, Debajyoti;Cunnusamy, Jessen;Carmona, Edwin;Boreland, Matthew B.;
12:366:6 Effect of porous Si and an etch-back process on the performance of a selective emitter solar cell
DOI:10.1016/j.solmat.2012.10.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:8 AU: Liang, Zongcun;Zeng, Fei;Song, Hao;Shen, Hui;
12:366:7 Characterization of the PSG/Si interface of H3PO4 doping process for solar cells
DOI:10.1016/j.solmat.2011.06.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:7 AU: Armigliato, A.;Nobili, D.;Solmi, S.;Blendin, G.;Schum, B.;Lachowicz, A.;Horzel, J.;
12:367:1 Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure
DOI:10.1103/PhysRevB.81.165316 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Mourad, Daniel;Barthel, Stefan;Czycholl, Gerd;
12:367:2 Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdxZn1-xSe
DOI:10.1103/PhysRevB.82.165204 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Mourad, Daniel;Czycholl, Gerd;Kruse, Carsten;Klembt, Sebastian;Retzlaff, Reiner;Hommel, Detlef;Gartner, Mariuca;Anastasescu, Mihai;
12:367:3 Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects
DOI:10.1063/1.3688900 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Schuh, K.;Barthel, S.;Marquardt, O.;Hickel, T.;Neugebauer, J.;Czycholl, G.;Jahnke, F.;
12:367:4 CdZnS quantum dots formed by the Langmuir-Blodgett technique
DOI:10.1116/1.4810782 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Milekhin, Alexander G.;Yeryukov, Nikolay A.;Sveshnikova, Larisa L.;Duda, Tatyana A.;Protasov, Dmitry Yu;Gutakovskii, Anton K.;Batsanov, Stepan A.;Surovtsev, Nikolay V.;Adichtchev, Sergey V.;Himcinschi, Cameliu;Dzhagan, Volodymir;Haidu, Francisc;Zahn, Dietrich R. T.;
12:367:5 Cylindrical coordinate representation for multiband Hamiltonians
DOI:10.1063/1.4759294 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Takhtamirov, Eduard;
12:367:6 A spectroscopic and photochemical study of Ag+-, Cu2+-, Hg2+-, and Bi3+-doped CdxZn1-xS nanoparticles
DOI:10.1016/j.jcis.2010.02.001 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:9 AU: Dzhagan, Volodymyr M.;Stroyuk, Oleksandr L.;Rayevska, Oleksandra E.;Kuchmiy, Stepan Ya.;Valakh, Mykhailo Ya.;Azhniuk, Yuriy M.;von Borczyskowski, Cristian;Zahn, Dietrich R. T.;
12:367:7 Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure (vol 81, 165316, 2010)
DOI:10.1103/PhysRevB.85.169901 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Mourad, Daniel;Barthel, Stefan;Czycholl, Gerd;
12:367:8 Vibrational spectra of quantum dots formed by Langmuir-Blodgett technique
DOI:10.1116/1.3442799 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:2 AU: Milekhin, A.;Sveshnikova, L.;Duda, T.;Surovtsev, N.;Adichtchev, S.;Ding, L.;Zahn, D. R. T.;
12:368:1 Formation and transformation of embedded GaN nanocrystals
DOI:10.1063/1.4714918 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Wood, A. W.;Collino, R. R.;Wang, P. T.;Wang, Y. Q.;Goldman, R. S.;
12:368:2 Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs
DOI:10.1063/1.3687912 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Warren, M. V.;Wood, A. W.;Canniff, J. C.;Naab, F.;Uher, C.;Goldman, R. S.;
12:368:3 Transport properties of ZnTe:N thin films
DOI:10.1063/1.4816815 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Chi, Hang;Chen, Chihyu;Phillips, Jamie D.;Uher, Ctirad;
12:368:4 Influence of embedded indium nanocrystals on GaAs thermoelectric properties
DOI:10.1063/1.4816087 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Warren, M. V.;Canniff, J. C.;Chi, H.;Morag, E.;Naab, F.;Stoica, V. A.;Clarke, R.;Uher, C.;Goldman, R. S.;
12:368:5 Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals
DOI:10.1063/1.3617464 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Wood, A. W.;Weng, X.;Wang, Y. Q.;Goldman, R. S.;
12:368:6 Formation mechanisms of embedded nanocrystals in SiNx
DOI:10.1063/1.4810917 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Canniff, J. C.;Wood, A. W.;Goldman, R. S.;
12:368:7 Low-temperature electrical resistivity and thermal conductivity of binary magnesium alloys
DOI:10.1016/j.actamat.2014.07.063 JN:ACTA MATERIALIA PY:2014
TC:2 AU: Ying, Tao;Chi, Hang;Zheng, Mingyi;Li, Zitong;Uher, Ctirad;
12:368:8 Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals
DOI:10.1063/1.3665122 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Wood, A. W.;Collino, R. R.;Cardozo, B. L.;Naab, F.;Wang, Y. Q.;Goldman, R. S.;
12:368:9 Formation and transfer of GaAsN nanostructure layers
DOI:10.1116/1.3630120 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:0 AU: Collino, R. R.;Wood, A. W.;Estrada, N. M.;Dick, B. B.;Ro, H. W.;Soles, C. L.;Wang, Y. Q.;Thouless, M. D.;Goldman, R. S.;
12:369:1 Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
DOI:10.1063/1.4871996 JN:AIP ADVANCES PY:2014
TC:3 AU: Al Tahtamouni, T. M.;Lin, J. Y.;Jiang, H. X.;
12:369:2 Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices
DOI:10.1016/j.jcrysgro.2009.12.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Allerman, A. A.;Crawford, M. H.;Miller, M. A.;Lee, S. R.;
12:369:3 Thermal crosstalk in arrays of III-N-based Lasers
DOI:10.1016/j.mseb.2013.08.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: Kuc, Maciej;Sarzala, Robert P.;Nakwaski, Wlodzimierz;
12:369:4 High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors
DOI:10.1063/1.4766732 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Al Tahtamouni, T. M.;Lin, J. Y.;Jiang, H. X.;
12:369:5 Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure
DOI:10.1063/1.4813859 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Kolbe, T.;Mehnke, F.;Guttmann, M.;Kuhn, C.;Rass, J.;Wernicke, T.;Kneissl, M.;
12:369:6 Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy
DOI:10.1063/1.3658734 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Rodak, L. E.;Korakakis, D.;
12:369:7 Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
DOI:10.1063/1.4809947 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Cheng, B.;Choi, S.;Northrup, J. E.;Yang, Z.;Knollenberg, C.;Teepe, M.;Wunderer, T.;Chua, C. L.;Johnson, N. M.;
12:369:8 Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1-xN for improved performance of deep ultraviolet light emitting diodes
DOI:10.1063/1.4798239 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Al Tahtamouni, T. M.;Lin, J. Y.;Jiang, H. X.;
12:369:9 Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering
DOI:10.1016/j.jcrysgro.2012.11.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Kim, Min-Sung;Lee, Byung-Teak;
12:369:10 Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique
DOI:10.1007/s11664-010-1455-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Rodak, L. E.;Korakakis, D.;
12:370:1 Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots
DOI:10.1016/j.jallcom.2012.12.069 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Lu, Cheng-Hsueh;Li, Yi-Chang;Chen, Yen-Hsiang;Tsai, Sheng-Chieh;Lai, Yen-Lin;Li, Yun-Li;Liu, Chuan-Pu;
12:370:2 Synthesis and field emission properties of GaN nanowires
DOI:10.1016/j.apsusc.2011.07.120 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Li, Enling;Cui, Zhen;Dai, Yuanbin;Zhao, Danna;Zhao, Tao;
12:370:3 The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations
DOI:10.1016/j.jallcom.2014.01.186 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Fu, Nannan;Li, Enling;Cui, Zhen;Ma, Deming;Wang, Wei;Zhang, Yulong;Song, Sha;Lin, Jie;
12:370:4 Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate
DOI:10.1016/j.jallcom.2014.06.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Xu, S. R.;Li, P. X.;Zhang, J. C.;Jiang, T.;Ma, J. J.;Lin, Z. Y.;Hao, Y.;
12:370:5 Optical and field emission properties of layer-structure GaN nanowires
DOI:10.1016/j.materresbull.2014.04.014 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Cui, Zhen;Li, Enling;Shi, Wei;Ma, Deming;
12:370:6 Effect of light Si-doping on the near-band-edge emissions in high quality GaN
DOI:10.1063/1.4750043 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Le, L. C.;Zhao, D. G.;Jiang, D. S.;Wu, L. L.;Li, L.;Chen, P.;Liu, Z. S.;Zhu, J. J.;Wang, H.;Zhang, S. M.;Yang, H.;
12:370:7 Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer
DOI:10.1016/j.materresbull.2012.09.009 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Shi, Feng;Xue, Chengshan;
12:371:1 Calculation of Fluctuations in Boundary Layers of Nanowire Field-Effect Biosensors
DOI:10.1166/jctn.2010.1644 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:16 AU: Heitzinger, Clemens;Liu, Yang;Mauser, Norbert J.;Ringhofer, Christian;Dutton, Robert W.;
12:371:2 Estimation of Michaelis-Meneten Constant and Maximum Rate of Reaction: A Nonlinear Approach
DOI:10.1166/jctn.2014.3677 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:0 AU: Nesakumar, Noel;Sethuraman, Swaminathan;Krishnan, Uma Maheswari;Rayappan, John Bosco Balaguru;
12:371:3 An electrochemical biosensor with nanointerface for lactate detection based on lactate dehydrogenase immobilized on zinc oxide nanorods
DOI:10.1016/j.jcis.2013.09.052 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:8 AU: Nesakumar, Noel;Thandavan, Kavitha;Sethuraman, Swaminathan;Krishnan, Uma Maheswari;Rayappan, John Bosco Balaguru;
12:371:4 Analysis of a Nanofilm of the Mercaptophenyl Diazonium Modified Gold Electrode Within New Statistical Parameters
DOI:10.1166/jctn.2010.1395 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:6 AU: Nigmatullin, Raoul R.;Baleanu, Dumitru;Dinc, Erdal;Ustundag, Zafer;Solak, Ali Osman;Kargin, Roman V.;
12:371:5 Non-Linearization of Modified Michaelis-Menten Kinetics
DOI:10.1166/jctn.2014.3678 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:0 AU: Nesakumar, Noel;Sethuraman, Swanninathan;Krishnan, Uma Maheswari;Rayappan, John Bosco Balaguru;
12:371:6 A New Approach to the Characterization of the Nano-Film Structure on Modified Electrode Systems by Factor Analysis Model
DOI:10.1166/jctn.2014.3312 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:6 AU: Dinc, Erdal;Solak, Ali Osman;
12:371:7 Characterization Approach to Modified Glassy Carbon Electrode-Nanofilm System Within Multidimensional Scaling
DOI:10.1166/jctn.2011.1688 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:8 AU: Tenreiro Machado, J. A.;Baleanu, Dumitru;Dinc, Erdal;Solak, All Osman;Eksi, Haslet;Guzel, Remziye;
12:371:8 Analysis of the Nano-Surface of a Modified Glassy Carbon Electrode by Pseudo Phase Plane Method
DOI:10.1166/jctn.2011.1914 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:1 AU: Tenreiro Machado, J. A.;Baleanu, Dumitru;Dinc, Erdal;Solak, Ali Osman;Eksi, Haslet;Guzel, Remziye;
12:371:9 Factor Analysis for the Characterization of the Nano-Surface of the Nitroazobenzene-Modified Glassy Carbon Electrode
DOI:10.1166/jetn.2012.2026 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:1 AU: Dinc, Erdal;Baleanu, Dumitru;Solak, Ali Osman;Eksi, Haslet;Guzel, Remziye;
12:372:1 Morphological and structural characterization of SiC based composite nanostructures
DOI:10.1016/j.apsusc.2013.03.166 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Filipescu, M.;Stokker-Cheregi, F.;Colceag, D.;Nedelcea, A.;Birjega, R.;Nistor, L. C.;Dinescu, M.;
12:372:2 Fabrication of two types of one-dimensional Si-C nanostructures by laser ablation
DOI:10.1007/s00339-010-5886-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:10 AU: Kokai, F.;Uchiyama, K.;Shimazu, T.;Koshio, A.;
12:372:3 Room temperature pulsed laser deposition of Si (x) C thin films in different compositions
DOI:10.1007/s00339-010-5712-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:6 AU: Hanyecz, I.;Budai, J.;Oszko, A.;Szilagyi, E.;Toth, Z.;
12:372:4 Catalyst-free growth of amorphous silicon nanowires by laser ablation
DOI:10.1007/s00339-012-7169-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Kokai, F.;Inoue, S.;Hidaka, H.;Uchiyama, K.;Takahashi, Y.;Koshio, A.;
12:372:5 Ellipsometric study of SixC films: Analysis of Tauc-Lorentz and Gaussian oscillator models
DOI:10.1016/j.tsf.2010.12.073 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Budai, Judit;Hanyecz, Istvan;Szilagyi, Edit;Toth, Zsolt;
12:372:6 Synthesis of heteroepytaxial 3C-SiC by means of PLD
DOI:10.1007/s00339-011-6494-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Monaco, G.;Garoli, D.;Natali, M.;Pelizzo, M. G.;Nicolosi, P.;
12:373:1 InGaN-based true green laser diodes on novel semi-polar {2 0 (2)over-bar 1} GaN substrates
DOI:10.1016/j.jcrysgro.2010.07.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Ueno, Masaki;Yoshizumi, Yusuke;Enya, Yohei;Kyono, Takashi;Adachi, Masahiro;Takagi, Shinpei;Tokuyama, Shinji;Sumitomo, Takamichi;Sumiyoshi, Kazuhide;Saga, Nobuhiro;Ikegami, Takatoshi;Katayama, Koji;Nakamura, Takao;
12:373:2 Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region
DOI:10.1007/s00339-013-7935-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Gladysiewicz, M.;Kudrawiec, R.;Syperek, M.;Misiewicz, J.;Siekacz, M.;Cywinski, G.;Khachapuridze, A.;Suski, T.;Skierbiszewski, C.;
12:373:3 Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations
DOI:10.1063/1.4714739 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Baranowski, M.;Kudrawiec, R.;Latkowska, M.;Syperek, M.;Misiewicz, J.;Gupta, J. A.;
12:373:4 The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
DOI:10.1016/j.jcrysgro.2015.01.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Wang, Yaxin;Shimma, Rika;Yamamoto, Tomohiro;Hayashi, Hideki;Shiohama, Ken-ichi;Kurihara, Kaori;Hasegawa, Ryuichi;Ohkawa, Kazuhiro;
12:373:5 Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates
DOI:10.1063/1.3466768 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Suski, T.;Staszczak, G.;Grzanka, S.;Czernecki, R.;Litwin-Staszewska, E.;Piotrzkowski, R.;Dmowski, L. H.;Khachapuridze, A.;Krysko, M.;Perlin, P.;Grzegory, I.;
12:373:6 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
DOI:10.1016/j.jcrysgro.2011.12.075 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:11 AU: Ohkawa, Kazuhiro;Watanabe, Tomomasa;Sakamoto, Masanori;Iiirako, Akira;Deura, Momoko;
12:373:7 Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms
DOI:10.1063/1.3695457 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Kudrawiec, R.;Syperek, M.;Latkowska, M.;Misiewicz, J.;Korpijarvi, V. -M.;Laukkanen, P.;Pakarinen, J.;Dumitrescu, M.;Guina, M.;Pessa, M.;
12:373:8 The source of holes in p-type InxGa1-xN films
DOI:10.1063/1.4759242 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Zvanut, M. E.;Willoughby, W. R.;Koleske, D. D.;
12:374:1 Direct imaging of light elements by annular dark-field aberration-corrected scanning transmission electron microscopy
DOI:10.1063/1.4866185 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Lotnyk, Andriy;Poppitz, David;Gerlach, Juergen W.;Rauschenbach, Bernd;
12:374:2 Crystal-induced effects at crystal/amorphous interfaces: The case of Si3N4/SiO2
DOI:10.1103/PhysRevB.82.081412 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Walkosz, Weronika;Klie, Robert F.;Ogut, Serdar;Mikijelj, Biljana;Pennycook, Stephen J.;Pantelides, Sokrates T.;Idrobo, Juan C.;
12:374:3 The dissociation of the [a plus c] dislocation in GaN
DOI:10.1080/14786435.2013.797617 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:6 AU: Hirsch, P. B.;Lozano, J. G.;Rhode, S.;Horton, M. K.;Moram, M. A.;Zhang, S.;Kappers, M. J.;Humphreys, C. J.;Yasuhara, A.;Okunishi, E.;Nellist, P. D.;
12:374:4 ADF STEM imaging of screw dislocations viewed end-on
DOI:10.1080/14786435.2010.505183 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:7 AU: Cosgriff, E. C.;Nellist, P. D.;Hirsch, P. B.;Zhou, Z.;Cockayne, D. J. H.;
12:374:5 Observation of the atomic structure of ss-SiAlON using three generations of high resolution electron microscopes
DOI:10.1080/14786435.2012.762468 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:0 AU: Thorel, A.;Ciston, J.;Bartel, T.;Song, C. -Y.;Dahmen, U.;
12:375:1 Indirect near-field absorption mediated by localized surface plasmons
DOI:10.1103/PhysRevB.84.165447 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Jung, Jesper;Trolle, Mads L.;Pedersen, Kjeld;Pedersen, Thomas G.;
12:375:2 Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals
DOI:10.1016/j.optmat.2014.09.025 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Pires Kassab, Luciana Reyes;Camilo, Mauricio Eiji;da Silva, Diego Silverio;Alves de Assumpcao, Thiago Alexandre;Fedorchuk, A. O.;Plucinski, K. J.;
12:375:3 Electrostatic plasmon resonances of metal nanospheres in layered geometries
DOI:10.1103/PhysRevB.81.125413 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Jung, Jesper;Pedersen, Thomas Garm;Sondergaard, Thomas;Pedersen, Kjeld;Larsen, Arne Nylandsted;Nielsen, Brian Bech;
12:375:4 Dyadic Green's functions of thin films: Applications within plasmonic solar cells
DOI:10.1103/PhysRevB.83.085419 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Jung, Jesper;Sondergaard, Thomas;Pedersen, Thomas Garm;Pedersen, Kjeld;Larsen, Arne Nylandsted;Nielsen, Brian Bech;
12:375:5 Indirect optical absorption in silicon via thin-film surface plasmon
DOI:10.1063/1.4746699 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Trolle, Mads L.;Pedersen, Thomas G.;
12:375:6 Growth and piezoelectric features of La2CaB10O19 crystals doped with Pr3+ ions
DOI:10.1016/j.jcrysgro.2012.01.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Ozga, K.;Majchrowski, A.;AlZayed, N.;Michalski, E.;Jaroszewicz, L.;Rakus, P.;Kityk, I. V.;Nabialek, M.;Szota, M.;
12:376:1 Optimization of organized silicon nanowires growth inside porous anodic alumina template using hot wire chemical vapor deposition process
DOI:10.1016/j.tsf.2011.01.333 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Lefeuvre, E.;Kim, K. H.;He, Z. B.;Maurice, J. -L.;Chatelet, M.;Pribat, D.;Cojocaru, C. S.;
12:376:2 Multiple Nanowire Species Synthesized on a Single Chip by Selectively Addressable Horizontal Nanochannels
DOI:10.1021/nl904207n JN:NANO LETTERS PY:2010
TC:10 AU: Xiang, Ying;Keilbach, Andreas;Codinachs, Lia Moreno;Nielsch, Kornelius;Abstreiter, Gerhard;Fontcuberta i Morral, Anna;Bein, Thomas;
12:376:3 Growth mechanism and dynamics of in-plane solid-liquid-solid silicon nanowires
DOI:10.1103/PhysRevB.81.085323 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Yu, Linwei;Roca i Cabarrocas, Pere;
12:376:4 Growth-in-place deployment of in-plane silicon nanowires
DOI:10.1063/1.3659895 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Yu, Linwei;Chen, Wanghua;O'Donnell, Benedict;Patriarche, Gilles;Bouchoule, Sophie;Pareige, Philippe;Rogel, Regis;Salaun, Anne Claire;Pichon, Laurent;Roca i Cabarrocas, Pere;
12:376:5 Mechanical constraint and release generates long, ordered horizontal pores in anodic alumina templates
DOI:10.1088/0957-4484/23/17/175602 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Bolger, Ciara T.;Fois, Giovanni;Petkov, Nikolay;Sassiat, Nicolas;Burke, Micheal;Quinn, Aidan J.;Cross, Graham L. W.;Holmes, Justin D.;
12:376:6 In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates
DOI:10.1021/nl503001g JN:NANO LETTERS PY:2014
TC:2 AU: Yu, Linwei;Xu, Mingkun;Xu, Jie;Xue, Zhaoguo;Fan, Zheng;Picardi, Gennaro;Fortuna, Franck;Wang, Junzhuan;Xu, Jun;Shi, Yi;Chen, Kunji;Roca i Cabarrocas, Pere;
12:376:7 Proximal oxidation as a director of self-organisation
DOI:10.1039/c0jm04352d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:2 AU: Fois, Giovanni;Bolger, Ciara T.;Holmes, Justin D.;Cross, Graham L. W.;
12:377:1 Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic
DOI:10.1002/aenm.201200827 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:6 AU: Shahrjerdi, Davood;Bedell, Stephen W.;Bayram, Can;Lubguban, Cristina C.;Fogel, Keith;Lauro, Paul;Ott, John A.;Hopstaken, Marinus;Gayness, Michael;Sadana, Devendra;
12:377:2 High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
DOI:10.1063/1.3681397 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Shahrjerdi, D.;Bedell, S. W.;Ebert, C.;Bayram, C.;Hekmatshoar, B.;Fogel, K.;Lauro, P.;Gaynes, M.;Gokmen, T.;Ott, J. A.;Sadana, D. K.;
12:377:3 A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells
DOI:10.1002/aenm.201400589 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:0 AU: Choi, Wonjung;Kim, Chang Zoo;Kim, Chang Su;Heo, Wooseok;Joo, Taiha;Ryu, Seung Yoon;Kim, Hogyoung;Kim, Hongjoon;Kang, Ho Kwan;Jo, Sungjin;
12:377:4 Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.08.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Sato, Tomonari;Mitsuhara, Manabu;Iga, Ryuzo;Kanazawa, Shigeru;Inoue, Yasuyuki;
12:377:5 Surfactant effects on GaAs-Ge heterostructures
DOI:10.1016/j.jcrysgro.2013.06.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Karlina, L. B.;Vlasov, A. S.;Ber, B. Y.;Kazanthev, D. Yu;Marukhina, E. P.;
12:377:6 Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
DOI:10.1016/j.jcrysgro.2009.10.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Zhu, Junyi;Liu, Feng;Stringfellow, G. B.;
12:377:7 Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies
DOI:10.1063/1.4812399 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kang, Dongseok;Arab, Shermin;Cronin, Stephen B.;Li, Xiuling;Rogers, John A.;Yoon, Jongseung;
12:377:8 Sb surfactant-mediated growth of strained InGaAs multiple-quantum wells by metalorganic vapor phase epitaxy at low growth temperatures
DOI:10.1016/j.jcrysgro.2009.11.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:1 AU: Sato, Tomonari;Mitsuhara, Manabu;Kondo, Yasuhiro;
12:378:1 Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells
DOI:10.1021/nl204053w JN:NANO LETTERS PY:2012
TC:16 AU: Hu, Shu;Kawamura, Yoko;Huang, Kevin C. Y.;Li, Yanying;Marshall, Ann F.;Itoh, Kohei M.;Brongersma, Mark L.;McIntyre, Paul C.;
12:378:2 Temperature-dependent studies of defect-assisted light emission and excitation processes in crystalline ZnO nanowire phosphors
DOI:10.1063/1.3462432 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Omari, M.;Gupta, A.;Kouklin, N.;
12:378:3 Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
DOI:10.1088/0957-4484/22/36/365707 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Gurevich, A. S.;Kochereshko, V. P.;Bleuse, J.;Mariette, H.;Waag, A.;Akimoto, R.;
12:378:4 II-VI nanowire radial heterostructures
DOI:10.1088/0957-4484/24/45/455603 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Kahen, K. B.;Goldthorpe, Irene A.;Holland, M.;
12:378:5 Low temperature II-VI nanowire growth using Au-Sn catalysts
DOI:10.1016/j.jcrysgro.2011.03.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Kahen, K. B.;Goldthorpe, Irene A.;Minter, John;
12:379:1 Single-chamber processes for a-Si:H solar cell deposition
DOI:10.1016/j.solmat.2011.10.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:8 AU: Merdzhanova, T.;Woerdenweber, J.;Zimmermann, T.;Zastrow, U.;Flikweert, A. J.;Stiebig, H.;Beyer, W.;Gordijn, A.;
12:379:2 Impurities in thin-film silicon: Influence on material properties and solar cell performance
DOI:10.1016/j.jnoncrysol.2011.11.030 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Merdzhanova, T.;Woerdenweber, J.;Beyer, W.;Kilper, T.;Zastrow, U.;Meier, M.;Stiebig, H.;Gordijn, A.;
12:379:3 Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source
DOI:10.1063/1.3357424 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Woerdenweber, Jan;Merdzhanova, Tsvetelina;Stiebig, Helmut;Beyer, Wolfhard;Gordijn, Aad;
12:379:4 Incorporation and critical concentration of oxygen in a-Si:H solar cells
DOI:10.1016/j.solmat.2011.05.035 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:3 AU: Woerdenweber, J.;Merdzhanova, T.;Gordijn, A.;Stiebig, H.;Beyer, W.;
12:379:5 Residual impurities in a process chamber on the characteristics of a-Si:H solar cells
DOI:10.1016/j.solmat.2013.07.052 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:0 AU: Kuo, Tai-Chao;Jiang, Yeu-Long;
12:379:6 a-Si:H/mu c-Si:H solar cells prepared by the single-chamber processes-minimization of phosphorus and boron cross contamination
DOI:10.1016/j.tsf.2013.06.016 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Merdzhanova, Tsvetelina;Zimmermann, Thomas;Zastrow, Uwe;Gordijn, Aad;Beyer, Wolfhard;
12:379:7 Cross-contamination in single-chamber processes for thin-film silicon solar cells
DOI:10.1016/j.jnoncrysol.2011.12.041 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Woerdenweber, J.;Merdzhanova, T.;Zimmermann, T.;Flikweert, A. J.;Stiebig, H.;Beyer, W.;Gordijn, A.;
12:380:1 Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires
DOI:10.1063/1.3592855 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Masumoto, Yasuaki;Hirata, Yuuki;Mohan, Premila;Motohisa, Junichi;Fukui, Takashi;
12:380:2 Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths
DOI:10.1063/1.4804327 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Anufriev, R.;Chauvin, N.;Khmissi, H.;Naji, K.;Barakat, J. -B.;Penuelas, J.;Patriarche, G.;Gendry, M.;Bru-Chevallier, C.;
12:380:3 One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires
DOI:10.1103/PhysRevB.82.075313 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Masumoto, Yasuaki;Goto, Ken;Yoshida, Seitaro;Sakuma, Yoshiki;Mohan, Premila;Motohisa, Junichi;Fukui, Takashi;
12:380:4 InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
DOI:10.1016/j.jcrysgro.2012.01.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Khmissi, H.;Naji, K.;Alouane, M. H. Hadj;Chauvin, N.;Bru-Chevallier, C.;Ilahi, B.;Patriarche, G.;Gendry, M.;
12:381:1 Ultra-fast vapour-liquid-solid synthesis of Si nanowires using ion-beam implanted gallium as catalyst
DOI:10.1088/0957-4484/22/39/395601 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Hetzel, Martin;Lugstein, Alois;Zeiner, Clemens;Wojcik, Tomasz;Pongratz, Peter;Bertagnolli, Emmerich;
12:381:2 Programmable Growth of Branched Silicon Nanowires Using a Focused Ion Beam
DOI:10.1021/nl100662z JN:NANO LETTERS PY:2010
TC:10 AU: Jun, Kimin;Jacobson, Joseph M.;
12:381:3 Networks of silicon nanowires: A large-scale atomistic electronic structure analysis
DOI:10.1063/1.4830039 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Keles, Umit;Liedke, Bartosz;Heinig, Karl-Heinz;Bulutay, Ceyhun;
12:381:4 Stark effect, polarizability, and electroabsorption in silicon nanocrystals
DOI:10.1103/PhysRevB.81.125333 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Bulutay, Ceyhun;Kulakci, Mustafa;Turan, Rasit;
12:381:5 Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis
DOI:10.1063/1.4898580 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hibst, N.;Knittel, P.;Kranz, C.;Mizaikoff, B.;Strehle, S.;
12:381:6 dc-switchable and single-nanocrystal-addressable coherent population transfer
DOI:10.1063/1.3526751 JN:APPLIED PHYSICS LETTERS PY:2010
TC:0 AU: Gunceler, Deniz;Bulutay, Ceyhun;
12:382:1 Bio-Inspired Complementary Photoconductor by Porphyrin-Coated Silicon Nanowires
DOI:10.1002/adma.201101931 JN:ADVANCED MATERIALS PY:2011
TC:12 AU: Choi, Sung-Jin;Lee, Young-Chul;Seol, Myeong-Lok;Ahn, Jae-Hyuk;Kim, Sungho;Moon, Dong-Il;Han, Jin-Woo;Mann, Stephen;Yang, Ji-Won;Choi, Yang-Kyu;
12:382:2 Porphyrin-Silicon Hybrid Field-Effect Transistor with Individually Addressable Top-gate Structure
DOI:10.1021/nn204535p JN:ACS NANO PY:2012
TC:9 AU: Seol, Myeong-Lok;Choi, Sung-Jin;Kim, Chang-Hoon;Moon, Dong-Il;Choi, Yang-Kyu;
12:382:3 Hybrid Porphyrin-Silicon Nanowire Field-Effect Transistor by Opto-Electrical Excitation
DOI:10.1021/nn303260a JN:ACS NANO PY:2012
TC:4 AU: Seol, Myeong-Lok;Choi, Sung-Jin;Choi, Ji-Min;Ahn, Jae-Hyuk;Choi, Yang-Kyu;
12:382:4 Photoelectric conversion behavior based on direct interfacial charge-transfer from porphyrin derivative to silicon nanowires
DOI:10.1063/1.3529451 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Wen, Liping;Liu, Xiaofeng;Yang, Nailiang;Zhai, Jin;Huang, Changshui;Li, Yuliang;Jiang, Lei;
12:383:1 Tracing the Migration History of Metal Catalysts in Metal-Assisted Chemically Etched Silicon
DOI:10.1021/nn305413r JN:ACS NANO PY:2013
TC:7 AU: Gueder, Firat;Yang, Yang;Kuecuekbayrak, Umut M.;Zacharias, Margit;
12:383:2 Engineered High Aspect Ratio Vertical Nanotubes as a Model System for the Investigation of Catalytic Methanol Synthesis Over Cu/ZnO
DOI:10.1021/am4042959 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Gueder, Firat;Frei, Elias;Kuecuekbayrak, Umut M.;Menzel, Andreas;Thomann, Ralf;Luptak, Roman;Holaender, Bernd;Krossing, Ingo;Zacharias, Margit;
12:383:3 An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition
DOI:10.1088/0957-4484/23/23/235607 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Subannajui, Kittitat;Gueder, Firat;Danhof, Julia;Menzel, Andreas;Yang, Yang;Kirste, Lutz;Wang, Chunyu;Cimalla, Volker;Schwarz, Ulrich;Zacharias, Margit;
12:384:1 Critical crack size of healing possibility of SiC ceramics
DOI:10.1016/j.msea.2010.02.004 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:7 AU: Nam, Ki Woo;Kim, Jong Soon;
12:384:2 Crack-healing behavior of hot-pressed TZ3Y20A-SiC ceramics
DOI:10.1016/j.ceramint.2013.11.117 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Zhang, Xiu-Ping;Ouyang, Jia-Hu;Liu, Zhan-Guo;Wang, Yu-Jin;Zhou, Yu;
12:384:3 In situ electron microscopy investigation of void healing in an Al-Mg-Er alloy at a low temperature
DOI:10.1016/j.actamat.2014.02.004 JN:ACTA MATERIALIA PY:2014
TC:1 AU: Song, M.;Du, K.;Wen, S. P.;Nie, Z. R.;Ye, H. Q.;
12:384:4 Development of input output relationships for self-healing Al2O3/SiC ceramic composites with Y2O3 additive using design of experiments
DOI:10.1016/j.ceramint.2011.03.046 JN:CERAMICS INTERNATIONAL PY:2011
TC:4 AU: Mohanty, Debajyoti;Sil, Anjan;Maiti, Kuntal;
12:384:5 Recovery of mechanical strength by surface crack disappearance via thermal oxidation for nano-Ni/Al2O3 hybrid materials
DOI:10.1016/j.ceramint.2012.10.008 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Maruoka, Daisuke;Nanko, Makoto;
12:384:6 Recovery of Mechanical Property on Nano-Co Particles Dispersed Al2O3 via High-Temperature Oxidation
DOI:10.2320/matertrans.MAW201202 JN:MATERIALS TRANSACTIONS PY:2012
TC:0 AU: Maruoka, Daisuke;Itaya, Tsuyoshi;Misaki, Tai;Nanko, Makoto;
12:384:7 Crack-healing behavior of Si3N4/SiC composite under stress and low oxygen pressure
DOI:10.1016/j.msea.2010.02.060 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:7 AU: Takahashi, Koji;Jung, Young-Soon;Nagoshi, Yasuto;Ando, Kotoji;
12:384:8 Healing properties of SiC ceramics according to surface roughness
DOI:10.1016/j.msea.2012.03.096 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2012
TC:0 AU: Nam, Ki Woo;Kim, Eun Sun;
12:384:9 The high temperature strength of SiC ceramics based on SiO2 nano-colloidal employed
DOI:10.1016/j.msea.2010.05.055 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:6 AU: Nam, Ki Woo;Kim, Jong Soon;Park, Seung Won;
12:385:1 Synthesis of Pt-Mo-N Thin Film and Catalytic Activity for Fuel Cells
DOI:10.1021/cm100525e JN:CHEMISTRY OF MATERIALS PY:2010
TC:11 AU: Miura, Akira;Tague, Michele E.;Gregoire, John M.;Wen, Xiao-Dong;van Dover, R. Bruce;Abruna, Hector D.;DiSalvo, Francis J.;
12:385:2 Dry Autoclaving for the Nanofabrication of Sulfides, Selenides, Borides, Phosphides, Nitrides, Carbides, and Oxides
DOI:10.1002/adma.201001210 JN:ADVANCED MATERIALS PY:2011
TC:15 AU: Pol, Vilas G.;Pol, Swati V.;Gedanken, Aharon;
12:385:3 Improved Fuel Cell Oxidation Catalysis in Pt1-xTax
DOI:10.1021/cm9020782 JN:CHEMISTRY OF MATERIALS PY:2010
TC:10 AU: Gregoire, John M.;Tague, Michele E.;Cahen, Sophie;Khan, Sahr;Abruna, Hector D.;DiSalvo, Francis J.;van Dover, R. Bruce;
12:385:4 Solid state synthesis of nitride, carbide and boride nanocrystals in an autoclave
DOI:10.1039/c1jm11893e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:10 AU: Zhu, Yongchun;Li, Qianwen;Mei, Tao;Qian, Yitai;
12:385:5 Solid state synthesis of a new ternary nitride MgMoN2 nanosheets and micromeshes
DOI:10.1039/c2jm30844d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: Wang, Liangbiao;Tang, Kaibin;Zhu, Yongchun;Li, Qianwen;Zhu, Baichuan;Wang, LianCheng;Si, Lulu;Qian, Yitai;
12:385:6 Low temperature solid-state synthesis of nanocrystalline gallium nitride
DOI:10.1016/j.materresbull.2012.06.027 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:2 AU: Wang, Liangbiao;Shi, Liang;Li, Qianwen;Si, Lulu;Zhu, Yongchun;Qian, Yitai;
12:386:1 Heteroepitaxy between wurtzite and corundum materials
DOI:10.1063/1.4804328 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Hayashi, Yuki;Banal, Ryan G.;Funato, Mitsuru;Kawakami, Yoichi;
12:386:2 Heteroepitaxial silicon film growth at 600 degrees C from an Al-Si eutectic melt
DOI:10.1016/j.tsf.2010.03.034 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Chaudhari, P.;Shim, Heejae;Wacaser, Brent A.;Reuter, Mark C.;Murray, Conal;Reuter, Kathleen B.;Jordan-Sweet, Jean;Ross, Frances M.;Guha, Supratik;
12:386:3 Effects of silicon nanowires length on solar cells photovoltaic properties
DOI:10.1007/s00339-012-7054-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Farangi, M.;Zahedifar, M.;Mozdianfard, M. R.;Pakzamir, M. H.;
12:386:4 Bistable nanofacet structures on vicinal AlN(0001) surfaces
DOI:10.1063/1.4868466 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Funato, Mitsuru;Hayashi, Yuki;Kawakami, Yoichi;
12:386:5 Contactless Measurement of Surface Dominated Recombination in Gold- and Aluminum-Catalyzed Silicon Vapor-Liquid-Solid Wires
DOI:10.1021/nl202279z JN:NANO LETTERS PY:2011
TC:2 AU: Bryce, Brian A.;Reuter, Mark C.;Wacaser, Brent A.;Tiwari, Sandip;
12:386:6 Nanoscale chemical templating of Si nanowires seeded with Al
DOI:10.1088/0957-4484/24/23/235301 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Khayyat, Maha M.;Wacaser, Brent A.;Reuter, Mark C.;Ross, Frances M.;Sadana, Devendra K.;Chen, Tze-Chiang;
12:386:7 Crystalline Al2O3 on buffered soda-lime glass by e-beam
DOI:10.1016/j.matlet.2014.08.089 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Chaudhari, Ashok;Vispute, R. D.;Murray, Thomas M.;Efstathiadis, Harry;
12:387:1 Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength
DOI:10.1063/1.3527089 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Wang, Q.;Hui, R.;Dahal, R.;Lin, J. Y.;Jiang, H. X.;
12:387:2 Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
DOI:10.1063/1.3295705 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Feng, I. W.;Li, J.;Sedhain, A.;Lin, J. Y.;Jiang, H. X.;Zavada, J.;
12:387:3 Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields
DOI:10.1063/1.3643041 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Woodward, N. T.;Nepal, N.;Mitchell, B.;Feng, I. W.;Li, J.;Jiang, H. X.;Lin, J. Y.;Zavada, J. M.;Dierolf, V.;
12:387:4 Raman characterization and stress analysis of AlN:Er3+ epilayers grown on sapphire and silicon substrates
DOI:10.1016/j.mseb.2014.04.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:0 AU: Kallel, T.;Dammak, M.;Wang, J.;Jadwisienczak, W. M.;
12:387:5 Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition
DOI:10.1063/1.3636418 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Wang, Q.;Dahal, R.;Feng, I. -W.;Lin, J. Y.;Jiang, H. X.;Hui, R.;
12:387:6 Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates
DOI:10.1063/1.3556678 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Feng, I. W.;Cao, X. K.;Li, J.;Lin, J. Y.;Jiang, H. X.;Sawaki, N.;Honda, Y.;Tanikawa, T.;Zavada, J. M.;
12:387:7 Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers
DOI:10.1016/j.optmat.2010.07.007 JN:OPTICAL MATERIALS PY:2011
TC:3 AU: Woodward, N.;Dierolf, V.;Lin, J. Y.;Jiang, H. X.;Zavada, J. M.;
12:387:8 Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping
DOI:10.1063/1.4892427 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hui, R.;Xie, R.;Feng, I. -W.;Sun, Z. Y.;Lin, J. Y.;Jiang, H. X.;
12:387:9 Near infrared photonic devices based on Er-doped GaN and InGaN
DOI:10.1016/j.optmat.2010.10.002 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: Dahal, R.;Lin, J. Y.;Jiang, H. X.;Zavada, J. M.;
12:388:1 Nanoporous ZnO Photoelectrode for Dye-Sensitized Solar Cell
DOI:10.1155/2012/474656 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:12 AU: Kilic, Bayram;Gur, Emre;Tuzemen, Sebahattin;
12:388:2 The Development of Photocatalyst with Hybrid Material CNT/TiO2 Thin Films for Dye-Sensitized Solar Cell
DOI:10.1155/2013/197276 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Kim, Yong Woo;Park, Sang Hee;
12:388:3 Epitaxially grown emitters for thin film silicon solar cells result in 16% efficiency
DOI:10.1016/j.tsf.2009.10.061 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Van Nieuwenhuysen, K.;Payo, M. Recaman;Kuma-Filipek, I.;Van Hoeymissen, J.;Beaucarne, G.;Poortmans, J.;
12:388:4 Construction of 3-dimensional ZnO-nanoflower structures for high quantum and photocurrent efficiency in dye sensitized solar cell
DOI:10.1016/j.apsusc.2013.12.065 JN:APPLIED SURFACE SCIENCE PY:2014
TC:6 AU: Kilic, Bayram;Gunes, Taylan;Besirli, Ilknur;Sezginer, Merve;Tuzemen, Sebahattin;
12:388:5 The Properties of Sprayed Nanostructured P-Type CuI Films for Dye-Sensitized Solar Cells Application
DOI:10.1155/2012/637637 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:5 AU: Amalina, M. N.;Rasheid, N. A.;Rusop, M.;
12:388:6 Near-Infrared Indocyanine Materials for Bioanalysis and Nano-TiO2 Photoanodes of Solar Cell
DOI:10.1155/2013/695107 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wang, Liqiu;Wang, Pengjun;Liu, Yang;Nie, Weiwei;Lv, Xiaofei;Wei, Yue;Hao, Yangyang;Yu, Hailing;Tian, Liang;Zheng, Lihui;Yang, Liuqing;
12:388:7 Solid state dye-sensitized solar cell with TiO2/NiO heterojunction: Effect of particle size and layer thickness on photovoltaic performance
DOI:10.1016/j.matchemphys.2010.10.017 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:9 AU: Wong, Kim Hai;Ananthanarayanan, Krishnamoorthy;Gajjela, Satyanarayana Reddy;Balaya, Palani;
12:388:8 Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process
DOI:10.1016/j.tsf.2010.12.150 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Rosenits, Philipp;Kopp, Fabian;Reber, Stefan;
12:389:1 Top-Down Fabrication of Fully CMOS-Compatible Silicon Nanowire Arrays and Their Integration into CMOS Inverters on Plastic
DOI:10.1021/nn102594d JN:ACS NANO PY:2011
TC:25 AU: Lee, Myeongwon;Jeon, Youngin;Moon, Taeho;Kim, Sangsig;
12:389:2 Length-dependent thermoelectric characteristics of silicon nanowires on plastics in a relatively low temperature regime in ambient air
DOI:10.1088/0957-4484/24/45/455402 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Choi, Jinyong;Cho, Kyoungah;Kim, Sangsig;
12:389:3 Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates
DOI:10.1021/nn500494a JN:ACS NANO PY:2014
TC:1 AU: Jeon, Youngin;Kim, Minsuk;Kim, Yoonjoong;Kim, Sangsig;
12:389:4 Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage Modulation
DOI:10.1021/acs.nanolett.5b00606 JN:NANO LETTERS PY:2015
TC:0 AU: Jeon, Youngin;Kim, Minsuk;Lim, Doohyeok;Kim, Sangsig;
12:389:5 Analysis of electrical parameters of p-channel silicon nanowire transistors with selectively thinned channels on plastics
DOI:10.1063/1.4747812 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Lee, M.;Jeon, Y.;Kim, S.;
12:389:6 Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending
DOI:10.1016/j.tsf.2012.10.097 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Lee, M. H.;Hsieh, B. -F.;Chang, S. T.;
12:390:1 Enhanced light output power of GaN-based light-emitting diodes by nano-rough indium tin oxide film using ZnO nanoparticles
DOI:10.1063/1.3575174 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Ryu, Beo Deul;Uthirakumar, Periyayya;Kang, Ji Hye;Kwon, Bong Jun;Chandramohan, S.;Kim, Hyun Kyu;Kim, Hee Yun;Ryu, Jae Hyoung;Kim, Hyung Gu;Hong, Chang-Hee;
12:390:2 Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes
DOI:10.1016/j.mseb.2009.11.024 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:15 AU: Uthirakumar, Periyayya;Kang, Ji Hye;Ryu, Beo Deul;Kim, Hyung Gu;Kim, Hyun Kyu;Hong, Chang-Hee;
12:390:3 Biologically Inspired Biophotonic Surfaces with Self-Antireflection
DOI:10.1002/smll.201303876 JN:SMALL PY:2014
TC:3 AU: Oh, Young-Jae;Kim, Jae-Jun;Jeong, Ki-Hun;
12:390:4 Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights
DOI:10.1155/2012/346915 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Yu, Sheng-Fu;Chang, Sheng-Po;Chang, Shoou-Jinn;Lin, Ray-Ming;Wu, Hsin-Hung;Hsu, Wen-Ching;
12:390:5 Growth of quaternary AlInGaN with various TMI molar rates
DOI:10.1016/j.jcrysgro.2010.03.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Yu, S. F.;Chang, S. J.;Lin, R. M.;Lin, Y. H.;Lu, Y. C.;Chang, S. P.;Chiou, Y. Z.;
12:390:6 Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures
DOI:10.1155/2013/832170 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Jung, Sang Hyun;Song, Keun Man;Choi, Young Su;Park, Hyeong-Ho;Shin, Hyun-Beom;Kang, Ho Kwan;Lee, Jaejin;
12:391:1 Electron Scattering and Electrical Conductance in Polycrystalline Metallic Films and Wires: Impact of Grain Boundary Scattering Related to Melting Point
DOI:10.1021/nn101014k JN:ACS NANO PY:2010
TC:13 AU: Zhu, Y. F.;Lang, X. Y.;Zheng, W. T.;Jiang, Q.;
12:391:2 Effect of electric and stress field on structures and quantum conduction of Cu nanowires
DOI:10.1063/1.3626284 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: He, C.;Qi, L.;Zhang, W. X.;Pan, H.;
12:391:3 Effect of bending stress on structures and quantum conduction of Cu nanowires
DOI:10.1063/1.3696052 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: He, C.;Zhang, W. X.;Shi, Z. Q.;Wang, J. P.;Pan, H.;
12:391:4 A comparable study of structural and electrical transport properties of Al and Cu nanowires using first-principle calculations
DOI:10.1063/1.4858408 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Gao, N.;Li, J. C.;Jiang, Q.;
12:391:5 Electronic structure effects on stability and quantum conductance in 2D gold nanowires
DOI:10.1007/s11051-011-0507-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:5 AU: Kashid, Vikas;Shah, Vaishali;Salunke, H. G.;
12:391:6 Aluminum Conducts Better than Copper at the Atomic Scale: A First-Principles Study of Metallic Atomic Wires
DOI:10.1021/nn303950b JN:ACS NANO PY:2012
TC:8 AU: Simbeck, Adam J.;Lanzillo, Nick;Kharche, Neerav;Verstraete, Matthieu J.;Nayak, Saroj K.;
12:392:1 High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
DOI:10.1016/j.jcrysgro.2010.06.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Stellmach, J.;Pristovsek, M.;Savas, Oe;Schlegel, J.;Yakovlev, E. V.;Kneissl, M.;
12:392:2 High growth rate MOVPE of Al(Ga)N in planetary reactor
DOI:10.1016/j.jcrysgro.2011.11.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Lundin, W. V.;Nikolaev, A. E.;Yagovkina, M. A.;Brunkov, P. N.;Rozhavskaya, M. M.;Ber, B. Ya.;Kazantsev, D. Yu.;Tsatsulnikov, A. F.;Lobanova, A. V.;Talalaev, R. A.;
12:392:3 Fast AlGaN growth in a whole composition range in planetary reactor
DOI:10.1016/j.jcrysgro.2012.09.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Lundin, W. V.;Nikolaev, A. E.;Rozhavskaya, M. M.;Zavarin, E. E.;Sakharov, A. V.;Troshkov, S. I.;Yagovkina, M. A.;Tsatsulnikov, A. F.;
12:392:4 Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue (R) MOCVD platform
DOI:10.1016/j.jcrysgro.2015.02.084 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Bao, Qilong;Zhu, Tiankai;Zhou, Ning;Guo, Shiping;Luo, Jun;Zhao, Chao;
12:392:5 On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors
DOI:10.1016/j.jcrysgro.2013.08.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Dauelsberg, Martin;Brien, Daniel;Rauf, Hendrik;Reiher, Fabian;Baumgartl, Johannes;Haeberlen, Oliver;Segal, Alexander S.;Lobanova, Anna V.;Yakovlev, Eugene V.;Talalaev, Roman A.;
12:392:6 X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.4865502 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kopp, Viktor S.;Kaganer, Vladimir M.;Baidakova, Marina V.;Lundin, Wsevolod V.;Nikolaev, Andrey E.;Verkhovtceva, Elena V.;Yagovkina, Maria A.;Cherkashin, Nikolay;
12:393:1 Design and synthesis of zero-zero-birefringence polymers in a quaternary copolymerization system
DOI:10.1016/j.polymer.2012.05.025 JN:POLYMER PY:2012
TC:12 AU: Iwasaki, Shuhei;Satoh, Zen;Shafiee, Houran;Tagaya, Akihiro;Koike, Yasuhiro;
12:393:2 Effect of aromatic additives with various alkyl groups on orientation birefringence of cellulose acetate propionate
DOI:10.1002/app.39609 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:5 AU: Nobukawa, Shogo;Aoki, Yoshihiko;Yoshimura, Hiroshi;Tachikawa, Yutaka;Yamaguchi, Masayuki;
12:393:3 Strong Orientation Correlation and Optical Anisotropy in Blend of Cellulose Ester and Poly(ethylene 2,6-naphthalate) Oligomer
DOI:10.1002/app.40570 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:2 AU: Nobukawa, Shogo;Hayashi, Hiroki;Shimada, Hikaru;Kiyama, Ayumi;Yoshimura, Hiroshi;Tachikawa, Yutaka;Yamaguchi, Masayuki;
12:393:4 Design and Synthesis of Zero-Zero-Birefringence Polymers Using N-Methylmaleimide
DOI:10.1002/app.40423 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:4 AU: Beppu, Shotaro;Iwasaki, Shuhei;Shafiee, Houran;Tagaya, Akihiro;Koike, Yasuhiro;
12:393:5 Design of zero-zero-birefringence polymers in methacrylate copolymer systems containing trichloroethyl methacrylate
DOI:10.1002/app.39136 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:4 AU: Iwasaki, Shuhei;Satoh, Zen;Shafiee, Houran;Tagaya, Akihiro;Koike, Yasuhiro;
12:393:6 Optical properties of chitin and chitosan biopolymers with application to structural color analysis
DOI:10.1016/j.optmat.2012.07.024 JN:OPTICAL MATERIALS PY:2012
TC:11 AU: Azofeifa, Daniel E.;Arguedas, Humberto J.;Vargas, William E.;
12:393:7 Incorporation of low-mass compound to alter the orientation birefringence in cellulose acetate propionate
DOI:10.1016/j.optmat.2013.02.019 JN:OPTICAL MATERIALS PY:2013
TC:2 AU: Abd Manaf, Mohd Edeerozey;Miyagawa, Azusa;Nobukawa, Shogo;Aoki, Yoshihiko;Yamaguchi, Masayuki;
12:393:8 Alternating stilbene copolymers with negative birefringence
DOI:10.1016/j.polymer.2011.08.009 JN:POLYMER PY:2011
TC:5 AU: Mao, Min;England, Jeneffer;Turner, S. Richard;
12:393:9 Extraordinary wavelength dispersion of birefringence in cellulose triacetate film with anisotropic nanopores
DOI:10.1016/j.polymer.2014.05.037 JN:POLYMER PY:2014
TC:3 AU: Nobukawa, Shogo;Shimada, Hikaru;Aoki, Yoshihiko;Miyagawa, Azusa;Vu Ahn Doan;Yoshimura, Hiroshi;Tachikawa, Yutaka;Yamaguchi, Masayuki;
12:394:1 Catastrophic optical damage at front and rear facets of diode lasers
DOI:10.1063/1.3524235 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Hempel, Martin;Tomm, Jens W.;Ziegler, Mathias;Elsaesser, Thomas;Michel, Nicolas;Krakowski, Michel;
12:394:2 Low threshold for optical damage in AlGaN epilayers and heterostructures
DOI:10.1063/1.4834520 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Saxena, Tanuj;Tamulaitis, Gintautas;Shatalov, Max;Yang, Jinwei;Gaska, Remis;Shur, Michael S.;
12:394:3 Near-field dynamics of broad area diode laser at very high pump levels
DOI:10.1063/1.3664745 JN:AIP ADVANCES PY:2011
TC:8 AU: Hempel, Martin;Tomm, Jens W.;Baeumler, Martina;Konstanzer, Helmer;Mukherjee, Jayanta;Elsaesser, Thomas;
12:394:4 Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
DOI:10.1063/1.3463039 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Ziegler, Mathias;Hempel, Martin;Larsen, Henning E.;Tomm, Jens W.;Andersen, Peter E.;Clausen, Sonnik;Elliott, Stella N.;Elsaesser, Thomas;
12:394:5 Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers
DOI:10.1063/1.3456388 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Hempel, Martin;Ziegler, Mathias;Tomm, Jens W.;Elsaesser, Thomas;Michel, Nicolas;Krakowski, Michel;
12:394:6 Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes
DOI:10.1063/1.3437395 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Elliott, Stella N.;Smowton, Peter M.;Ziegler, Mathias;Tomm, Jens W.;Zeimer, Ute;
12:395:1:1 Electro-optically cavity dumped 2 mu m semiconductor disk laser emitting 3 ns pulses of 30 W peak power
DOI:10.1063/1.4757760 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kaspar, Sebastian;Rattunde, Marcel;Toepper, Tino;Schwarz, Ulrich T.;Manz, Christian;Koehler, Klaus;Wagner, Joachim;
12:395:1:2 Micro-cavity 2-mu m GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
DOI:10.1063/1.4816819 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Kaspar, Sebastian;Rattunde, Marcel;Schilling, Christian;Adler, Steffen;Holl, Peter;Manz, Christian;Koehler, Klaus;Wagner, Joachim;
12:395:1:3 Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm
DOI:10.1063/1.3660243 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Schwarzbaeck, T.;Kahle, H.;Eichfelder, M.;Rossbach, R.;Jetter, M.;Michler, P.;
12:395:1:4 High-power 2.0 mu m semiconductor disk laser-Influence of lateral lasing
DOI:10.1063/1.4714512 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Toepper, Tino;Rattunde, Marcel;Kaspar, Sebastian;Moser, Ruediger;Manz, Christian;Koehler, Klaus;Wagner, Joachim;
12:395:1:5 Semiconductor disk laser at 2.05 mu m wavelength with < 100 kHz linewidth at 1 W output power
DOI:10.1063/1.3675637 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Kaspar, Sebastian;Rattunde, Marcel;Toepper, Tino;Manz, Christian;Koehler, Klaus;
12:395:2:1 Tunable ultraviolet vertically-emitting organic laser
DOI:10.1063/1.3571558 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Forget, Sebastien;Rabbani-Haghighi, Hadi;Diffalah, Nordine;Siove, Alain;Chenais, Sebastien;
12:395:2:2 Electronic tuning of integrated blue-violet GaN tunable coupled-cavity laser
DOI:10.1063/1.4742971 JN:AIP ADVANCES PY:2012
TC:0 AU: Guziy, O.;Grzanka, S.;Leszczynski, M.;Perlin, P.;Schemmann, M.;Salemink, H. W. M.;
12:396:1:1 Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove
DOI:10.1063/1.3608053 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Qu, Y.;Ban, S. L.;
12:396:1:2 Ternary mixed crystal effects on interface optical phonon and electron-interface optical phonon coupling in wurtzite GaN/AlxGa1-xN quantum wells
DOI:10.1016/j.optmat.2013.03.032 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Huang, Wen-Deng;Chen, Guang-De;Ye, Hong-Gang;Ren, Ya-Jie;
12:396:1:3 Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model
DOI:10.1063/1.4873975 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Du, Jiangfeng;Yan, Hui;Yin, Chenggong;Feng, Zhihong;Dun, Shaobo;Yu, Qi;
12:396:1:4 Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1-xN/GaN quantum wells
DOI:10.1063/1.4748173 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Huang, Wen-Deng;Chen, Guang-De;Ren, Ya-Jie;
12:396:1:5 Effects of ternary mixed crystal and size on optical phonons in wurtzite nitride core-shell nanowires
DOI:10.1063/1.4871544 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, J.;Guan, J. Y.;Zhang, S. F.;Ban, S. L.;Qu, Y.;
12:396:1:6 Interface/surface optical phonon in onion-like quantum dots
DOI:10.1016/j.optmat.2011.11.017 JN:OPTICAL MATERIALS PY:2012
TC:3 AU: Yang, Yang;Cheng, Cheng;
12:396:2:1 Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging
DOI:10.1063/1.3640233 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Zhu, J. H.;Ning, J. Q.;Zheng, C. C.;Xu, S. J.;Zhang, S. M.;Yang, Hui;
12:396:2:2 Ag/GaP nanoparticles with photooxidation property under visible light
DOI:10.1007/s10853-011-5274-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:2 AU: Zhang, Zhao-Chun;Li, Jian-Lin;
12:396:2:3 Raman scattering from surface optical phonon mode in gallium phosphide nanomaterials
DOI:10.1007/s11051-009-9646-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:3 AU: Zhang, Zhao-Chun;Zhang, Qi-Xian;
12:397:1:1 Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
DOI:10.1016/j.jcrysgro.2011.12.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Imade, Mamoru;Bu, Yuan;Sumi, Tomoaki;Kitamoto, Akira;Yoshimura, Masashi;Sasaki, Takatomo;Imsemura, Masashi;Mori, Yusuke;
12:397:1:2 Effect of H-2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3
DOI:10.1016/j.jcrysgro.2014.01.031 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Bu, Yuan;Imade, Mamoru;Kitamoto, Akira;Yoshimura, Masashi;Isemura, Masashi;Mori, Yusuke;
12:397:1:3 Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3
DOI:10.1016/j.jcrysgro.2009.12.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Imade, Mamoru;Kishimoto, Hiroki;Kawamura, Fumio;Yoshimura, Masashi;Kitaoka, Yasuo;Sasaki, Takatomo;Mori, Yusuke;
12:397:1:4 Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3
DOI:10.1016/j.jcrysgro.2011.06.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Bu, Yuan;Imade, Mamoru;Kishimoto, Hiroki;Yoshimura, Masashi;Sasaki, Takatomo;Kitaoka, Yasuo;Isemura, Masashi;Mori, Yusuke;
12:397:1:5 Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 (vol 350, pg 56, 2012)
DOI:10.1016/j.jcrysgro.2012.06.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Imade, Mamoru;Bu, Yuan;Sumi, Tomoaki;Kitamoto, Akira;Yoshimura, Masashi;Sasaki, Takatomo;Isemura, Masashi;Mori, Yusuke;
12:397:2:1 PVT growth of GaN bulk crystals
DOI:10.1016/j.jcrysgro.2010.10.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Siche, D.;Gogova, D.;Lehmann, S.;Fizia, T.;Fornari, R.;Andrasch, M.;Pipa, A.;Ehlbeck, J.;
12:397:2:2 Temporally and spatially resolved characterization of microwave induced argon plasmas: Experiment and modeling
DOI:10.1063/1.4870858 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Baeva, M.;Andrasch, M.;Ehlbeck, J.;Loffhagen, D.;Weltmann, K. -D.;
12:397:2:3 Pseudohalide vapour growth of thick GaN layers
DOI:10.1016/j.jcrysgro.2009.12.055 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Jacobs, K.;Siche, D.;Klimm, D.;Rost, H. -J.;Gogova, D.;
12:398:1 Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE
DOI:10.1016/j.jcrysgro.2010.04.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Kumagai, Yoshinao;Enatsu, Yuuki;Ishizuki, Masanari;Kubota, Yuki;Tajima, Jumpei;Nagashima, Toru;Murakami, Hisashi;Takada, Kazuya;Koukitu, Akinori;
12:398:2 Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
DOI:10.1016/j.tsf.2014.11.022 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Claudel, A.;Fellmanna, V.;Gelard, I.;Coudurier, N.;Sauvage, D.;Balaji, M.;Blanquet, E.;Boichot, R.;Beutier, G.;Coindeau, S.;Pierret, A.;Attal-Tretout, B.;Luca, S.;Crisci, A.;Baskar, K.;Pons, M.;
12:398:3 Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
DOI:10.1016/j.jcrysgro.2011.12.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Nagashima, Toru;Hakomori, Akira;Shimoda, Takafumi;Hironaka, Keiichiro;Kubota, Yuki;Kinoshita, Toru;Yamamoto, Reo;Takada, Kazuya;Kumagai, Yoshinao;Koukitu, Akinori;Yanagi, Hiroyuki;
12:398:4 Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC
DOI:10.1016/j.jcrysgro.2010.11.109 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Volkova, Anna;Ivantsov, Vladimir;Leung, Larry;
12:398:5 Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
DOI:10.1016/j.jcrysgro.2011.10.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Togashi, Rie;Nagashima, Toru;Harada, Manabu;Murakami, Hisashi;Kumagai, Yoshinao;Yanagi, Hiroyuki;Koukitu, Akinori;
12:398:6 Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process
DOI:10.1016/j.jcrysgro.2011.09.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Claudel, A.;Blanquet, E.;Chaussende, D.;Boichot, R.;Doisneau, B.;Berthome, G.;Crisci, A.;Mank, H.;Moisson, C.;Pique, D.;Pons, M.;
12:398:7 Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.12.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Freitas, J. A., Jr.;Culbertson, J. C.;Mastro, M. A.;Kumagai, Y.;Koukitu, A.;
12:399:1 Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering
DOI:10.1103/PhysRevB.82.193301 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Konar, Aniruddha;Fang, Tian;Sun, Nan;Jena, Debdeep;
12:399:2 Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots
DOI:10.1063/1.3541882 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Li, Guodong;Jiang, Chao;Zhu, Qinsheng;Sakaki, Hiroyuki;
12:399:3 Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
DOI:10.1063/1.3467520 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Li, Guodong;Yin, Hong;Zhu, Qinsheng;Sakaki, Hiroyuki;Jiang, Chao;
12:399:4 Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field
DOI:10.1063/1.4809763 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Jin, Dong-Dong;Yang, Shao-Yan;Zhang, Liu-Wan;Li, Hui-jie;Zhang, Heng;Wang, Jian-xia;Yang, Tao;Liu, Xiang-Lin;Zhu, Qin-Sheng;Wang, Zhan-Guo;
12:399:5 Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
DOI:10.1063/1.4775790 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Jin, Dong-Dong;Jiang, Chao;Li, Guo-Dong;Zhang, Liu-Wan;Yang, Tao;Liu, Xiang-Lin;Yang, Shao-Yan;Zhu, Qin-Sheng;Wang, Zhan-Guo;
12:399:6 Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction
DOI:10.1063/1.4894625 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhang, Jinfeng;Li, Yao;Yan, Ran;Liu, Guipeng;Nie, Yuhu;Zhang, Jincheng;Hao, Yue;
12:400:1 Room temperature growth of InxGa1-xN thin films by mixed source modified activated reactive evaporation
DOI:10.1016/j.apsusc.2011.05.035 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Meher, S. R.;Biju, Kuyyadi P.;Jain, Mahaveer K.;
12:400:2 Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation
DOI:10.1016/j.apsusc.2011.10.032 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Meher, S. R.;Biju, Kuyyadi P.;Jain, Mahaveer K.;
12:400:3 Composition-dependent structural, optical and electrical properties of InxGa1-xN (0.5 <= x <= 0.93) thin films grown by modified activated reactive evaporation
DOI:10.1007/s10853-012-6859-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Meher, S. R.;Subrahmanyam, A.;Jain, Mahaveer K.;
12:400:4 A novel ultrasonic method for the preparation of a beta-In2S3 nanorod in a CNT nanovessel
DOI:10.1016/j.scriptamat.2010.03.030 JN:SCRIPTA MATERIALIA PY:2010
TC:10 AU: Roy, Mainak;Mandal, Balaji Prasad;Dutta, Dimple P.;Tyagi, Avesh Kumar;
12:400:5 Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer
DOI:10.1016/j.apsusc.2010.04.072 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Tsai, P. C.;Chen, W. R.;Su, Y. K.;Huang, C. Y.;
12:400:6 Structural and optical properties of DC Sputtered Cd2SnO4 nanocrystalline films
DOI:10.1016/j.jallcom.2013.09.079 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: El-Nahass, M. M.;Atta, A. A.;Abd El-Raheem, M. M.;Hassanien, A. M.;
12:400:7 Optical constants of Na-In2S3 thin films prepared by vacuum thermal evaporation technique
DOI:10.1016/j.tsf.2011.01.410 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Timoumi, A.;Bouzouita, H.;Rezig, B.;
12:401:1 Reply on the "critical comments on speculations with ... free-volume defects ... in ion-conducting Ag/AgI-As2S3 glasses ..."
DOI:10.1016/j.ssi.2012.11.016 JN:SOLID STATE IONICS PY:2013
TC:3 AU: Kavetskyy, T.;Borc, J.;Petkov, P.;Kolev, K.;Petkova, T.;Tsmots, V.;
12:401:2 Critical comments on speculations with open and closed "free-volume defects ... in ion-conducting Ag/AgI-As2S3 glasses ... "
DOI:10.1016/j.ssi.2011.11.030 JN:SOLID STATE IONICS PY:2012
TC:4 AU: Shpotyuk, O.;Filipecki, J.;Hyla, M.;Ingram, A.;
12:401:3 Post-irradiation relaxation in Vitreous arsenic/antimony trisulphides
DOI:10.1016/j.jnoncrysol.2010.06.052 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:9 AU: Balitska, V.;Shpotyuk, Ya.;Filipecki, J.;Shpotyuk, O.;Iovu, M.;
12:401:4 Free volume evolution in chalcogenide glasses as probed by PAL spectroscopy
DOI:10.1016/j.ssi.2014.09.008 JN:SOLID STATE IONICS PY:2014
TC:0 AU: Shpotyuk, O.;Filipecki, J.;Shpotyuk, M.;Ingram, A.;
12:401:5 Free-volume defects and microstructure in ion-conducting Ag/AgI-As2S3 glasses as revealed from positron annihilation and microhardness measurements
DOI:10.1016/j.ssi.2010.12.004 JN:SOLID STATE IONICS PY:2011
TC:5 AU: Kavetskyy, T.;Borc, J.;Petkov, P.;Kolev, K.;Petkova, T.;
12:401:6 Study on Soluble Polyaniline by Positron Annihilation Technique
DOI:10.1002/app.32360 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:1 AU: Dan, Ananya;Sengupta, P. K.;Ganguly, Bichitra N.;
12:402:1 A new class of Zn-II and Cr-III porphyrins incorporated into porous polymer matrices via an atmospheric pressure plasma enhanced CVD to form gas sensing layers
DOI:10.1039/c3ta13488a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:0 AU: Heier, Philip;Boscher, Nicolas D.;Bohn, Torsten;Heinze, Katja;Choquet, Patrick;
12:402:2 Tuning free base tetraphenylporphyrins as optical sensing elements for volatile organic analytes
DOI:10.1039/c0jm03670f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:14 AU: Brittle, Stuart A.;Richardson, Tim H.;Dunbar, Alan D. F.;Turega, Simon M.;Hunter, Chris A.;
12:402:3 Production of novel microporous porphyrin materials with superior sensing capabilities
DOI:10.1039/c2jm15008e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:8 AU: Tonezzer, Michele;Maggioni, Gianluigi;Dalcanale, Enrico;
12:402:4 Conformational switching in bis(zinc porphyrin) Langmuir-Schaefer film as an effective tool for selectively sensing aromatic amines
DOI:10.1016/j.jcis.2012.06.081 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:1 AU: Giancane, Gabriele;Borovkov, Victor;Inoue, Yoshihisa;Valli, Ludovico;
12:402:5 A dirhodium(II,II) complex as a highly selective molecular material for ammonia detection: QCM studies
DOI:10.1039/c1jm12586a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:0 AU: Lo Schiavo, Sandra;Cardiano, Paola;Donato, Nicola;Latino, Mariangela;Neri, Giovanni;
12:402:6 Macroscopic expansion of tetraphenylporphyrin Langmuir layers stimulated by protonation
DOI:10.1039/c2sm00023g JN:SOFT MATTER PY:2012
TC:2 AU: Brittle, S. A.;Flores, A.;Hobson, A.;Parnell, A. J.;Dunbar, A. D. F.;Hunter, C. A.;Richardson, T. H.;
12:402:7 Luminescent lanthanide-based hybrid coatings deposited by atmospheric pressure plasma assisted chemical vapour deposition
DOI:10.1039/c1jm14659a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:7 AU: Boscher, Nicolas D.;Choquet, Patrick;Duday, David;Kerbellec, Nicolas;Lambrechts, Jean-Christophe;Maurau, Remy;
12:402:8 Macroscopic manifestation of a vapour-induced molecular switching phenomenon
DOI:10.1039/c0sm00133c JN:SOFT MATTER PY:2010
TC:3 AU: Richardson, T. H.;Brittle, S.;Parnell, A. J.;Fryer, A.;McCaig, T.;Hobson, A.;Dunbar, A. D. F.;Hutchinson, J.;Hunter, C. A.;
12:403:1 High Throughput Nanofabrication of Silicon Nanowire and Carbon Nanotube Tips on AFM Probes by Stencil-Deposited Catalysts
DOI:10.1021/nl104384b JN:NANO LETTERS PY:2011
TC:17 AU: Engstrom, Daniel S.;Savu, Veronica;Zhu, Xueni;Bu, Ian Y. Y.;Milne, William I.;Brugger, Juergen;Boggild, Peter;
12:403:2 Efficient attachment of carbon nanotubes to conventional and high-frequency AFM probes enhanced by electron beam processes
DOI:10.1088/0957-4484/24/23/235705 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Slattery, Ashley D.;Blanch, Adam J.;Quinton, Jamie S.;Gibson, Christopher T.;
12:403:3 Ultra-high aspect ratio replaceable AFM tips using deformation-suppressed focused ion beam milling
DOI:10.1088/0957-4484/24/46/465701 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Savenko, Alexey;Yildiz, Izzet;Petersen, Dirch Hjorth;Boggild, Peter;Bartenwerfer, Malte;Krohs, Florian;Oliva, Maria;Harzendorf, Torsten;
12:403:4 Growth and morphology control of carbon nanotubes at the apexes of pyramidal silicon tips
DOI:10.1088/0957-4484/21/10/105605 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Edgeworth, J. P.;Burt, D. P.;Dobson, P. S.;Weaver, J. M. R.;Macpherson, J. V.;
12:403:5 Silicon nanowire atomic force microscopy probes for high aspect ratio geometries
DOI:10.1063/1.4720406 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Bryce, Brian A.;Ilic, B. Robert;Reuter, Mark C.;Tiwari, Sandip;
12:403:6 Making carbon nanotube electron sources of defined lengths and with closed caps
DOI:10.1088/0957-4484/22/23/235308 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Heeres, Erwin C.;Oosterkamp, Tjerk H.;de Jonge, Niels;
12:403:7 Microwave-Assisted Fabrication of Carbon Nanotube AFM Tips
DOI:10.1021/nl101934j JN:NANO LETTERS PY:2010
TC:16 AU: Druzhinina, Tamara S.;Hoeppener, Stephanie;Schubert, Ulrich S.;
12:404:1:1 Weakly chiral networks and two-dimensional delocalized states in a weak magnetic field
DOI:10.1103/PhysRevB.81.165426 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Mkhitaryan, V. V.;Kagalovsky, V.;Raikh, M. E.;
12:404:1:2 Symmetry, Universality and Critical Transitions in the Network Models
DOI:10.1166/jctn.2011.1698 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:2 AU: Kagalovsky, Victor;
12:404:1:3 Consistency Verification Between Goal Model and Process Model in Requirements Analysis of Networked Software
DOI:10.1166/jctn.2014.3508 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:0 AU: Liu, Yang;Wu, Jinzhao;Qiao, Rui;
12:404:1:4 Anti-levitation in integer quantum Hall systems
DOI:10.1103/PhysRevB.89.045314 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Wang, C.;Avishai, Y.;Meir, Yigal;Wang, X. R.;
12:404:1:5 An Interference-Reducing Topology Control for 3D Wireless Sensor Networks
DOI:10.1166/jctn.2013.2716 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:2 AU: Wang, Dong;Long, Wangchen;Li, Xiao Hong;
12:404:2:1 Atomic water channel controlling remarkable properties of a single brain microtubule: Correlating single protein to its supramolecular assembly
DOI:10.1016/j.bios.2013.02.050 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:24 AU: Sahu, Satyajit;Ghosh, Subrata;Ghosh, Batu;Aswani, Krishna;Hirata, Kazuto;Fujita, Daisuke;Bandyopadhyay, Anirban;
12:404:2:2 Multi-mode electro-mechanical vibrations of a microtubule: In silico demonstration of electric pulse moving along a microtubule
DOI:10.1063/1.4884118 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Havelka, Daniel;Cifra, Michal;Kucera, Ondrej;
12:404:2:3 Computational Myths and Mysteries That Have Grown Around Microtubule in the Last Half a Century and Their Possible Verification
DOI:10.1166/jctn.2011.1716 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:5 AU: Sahu, Satyajit;Ghosh, Subrata;Fujita, Daisuke;Bandyopadhyay, Anirban;
12:404:2:4 Multi-level memory-switching properties of a single brain microtubule
DOI:10.1063/1.4793995 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Sahu, Satyajit;Ghosh, Subrata;Hirata, Kazuto;Fujita, Daisuke;Bandyopadhyay, Anirban;
12:405:1 Cylindric quantum wires in a threading magnetic field: A proposal of characterization based on zero bias electron transport
DOI:10.1063/1.4770431 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Onorato, P.;
12:405:2 Landau levels and edge states in a cylindrical two-dimensional electron gas: A semiclassical approach
DOI:10.1103/PhysRevB.82.205305 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Bellucci, S.;Onorato, P.;
12:405:3 Landau levels and edge states in carbon nanotubes: A semiclassical approach
DOI:10.1103/PhysRevB.84.233403 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Onorato, P.;
12:405:4 The role of the geometry in multiwall carbon nanotube interconnects
DOI:10.1063/1.3491028 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Bellucci, S.;Onorato, P.;
12:405:5 Surface optical phonon-assisted electron Raman scattering in a free-standing quantum wire with ring geometry
DOI:10.1016/j.tsf.2011.06.045 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Zhong, Qing-Hu;Sun, Yun-Tao;
12:406:1 Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation
DOI:10.1063/1.4896783 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wierer, J. J., Jr.;Allerman, A. A.;Skogen, E. J.;Tauke-Pedretti, A.;Alford, C.;Vawter, G. A.;Montano, I.;
12:406:2 Silicon impurity-induced layer disordering of AlGaN/AlN superlattices
DOI:10.1063/1.3478002 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Wierer, J. J., Jr.;Allerman, A. A.;Li, Q.;
12:406:3 Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3650929 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Sodabanlu, Hassanet;Yang, Jung-Seung;Tanemura, Takuo;Sugiyama, Masakazu;Shimogaki, Yukihiro;Nakano, Yoshiaki;
12:406:4 Intersubband transition at 1.55 mu m in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 degrees C
DOI:10.1016/j.jcrysgro.2010.10.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Yang, Jung-Seung;Sodabanlu, Hassanet;Sugiyama, Masakazu;Nakano, Yoshiaki;Shimogaki, Yukihiro;
12:406:5 Temperature stability of intersubband transitions in AlN/GaN quantum wells
DOI:10.1063/1.3456528 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Berland, Kristian;Stattin, Martin;Farivar, Rashid;Sultan, D. M. S.;Hyldgaard, Per;Larsson, Anders;Wang, Shu Min;Andersson, Thorvald G.;
12:406:6 Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors
DOI:10.1063/1.3599846 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Hofstetter, Daniel;Di Francesco, Joab;Martin, Denis;Grandjean, Nicolas;Kotsar, Yulia;Monroy, Eva;
12:406:7 Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE
DOI:10.1016/j.jcrysgro.2012.08.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Anazawa, Kazehiko;Hassanet, Sodabanlu;Fujii, Katsushi;Nakano, Yoshiaki;Sugiyama, Masakazu;
12:407:1 Large-size multi-crystalline silicon solar cells with honeycomb textured surface and point-contacted rear toward industrial production
DOI:10.1016/j.solmat.2010.04.035 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:16 AU: Niinobe, Daisuke;Morikawa, Hiroaki;Hiza, Shuichi;Sato, Takehiko;Matsuno, Shigeru;Fujioka, Hirofumi;Katsura, Tomotaka;Okamoto, Tatsuki;Hamamoto, Satoshi;Ishihara, Takashi;Arimoto, Satoshi;
12:407:2 Femtosecond laser direct hard mask writing for selective facile micron-scale inverted-pyramid patterning of silicon
DOI:10.1063/1.4768689 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kumar, K.;Lee, K. K. C.;Herman, P. R.;Nogami, J.;Kherani, N. P.;
12:407:3 Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells
DOI:10.1016/j.apsusc.2012.10.117 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Fan, Yujie;Han, Peide;Liang, Peng;Xing, Yupeng;Ye, Zhou;Hu, Shaoxu;
12:407:4 Fabrication of honeycomb texture on poly-Si by laser interference and chemical etching
DOI:10.1016/j.apsusc.2013.07.134 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Yang, Bogeum;Lee, Myeongkyu;
12:407:5 Thin film solar cells on honeycomb-structured substrates for photovoltaic building blocks
DOI:10.1016/j.renene.2013.11.004 JN:RENEWABLE ENERGY PY:2014
TC:0 AU: Baik, Seung Jae;Lee, Yongmin;Lim, Koeng Su;Kim, Keun-Taek;
12:407:6 Fabrication of an ultra-thin silicon solar cell and nano-scale honeycomb structure by thermal-stress-induced pattern transfer method
DOI:10.1016/j.tsf.2013.10.019 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Du, Chen-Hsun;Wang, Teng-Yu;Chen, Chien-Hsun;AndrewYeh, J.;
12:408:1 An experimental investigation on fluidic behaviors in a two-dimensional nanoenvironment
DOI:10.1063/1.4816095 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Li, Hui;Xu, Xiang;Qiao, Yu;
12:408:2 Environmental green chemistry applications of nanoporous carbons
DOI:10.1007/s10853-009-4184-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:18 AU: Matos, Juan;Garcia, Andreina;Poon, Po S.;
12:408:3 Effects of addition of potassium chloride and ethylene glycol on nanofluidic behaviors
DOI:10.1007/s10853-011-5334-x JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:1 AU: Lu, Weiyi;Kim, Taewan;Punyamurtula, Venkata K.;Han, Aijie;Qiao, Yu;
12:408:4 Effects of pore diameter and organic chain length on energy dissipation properties of MWCNTs based nanofluids
DOI:10.1016/j.matchemphys.2012.08.011 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:1 AU: Li, Hui;Xu, Xiang;Shi, Tonglu;
12:408:5 Photodegradation of phenol red on a Ni-doped niobate/carbon composite
DOI:10.1016/j.ceramint.2014.02.026 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Lanfredi, Silvania;Nobre, Marcos A. L.;Moraes, Paula G. P.;Matos, Juan;
12:408:6 Electrically controlling infiltration pressure in nanopores of a hexagonal mesoporous silica
DOI:10.1016/j.matchemphys.2012.01.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Lu, Weiyi;Kim, Taewan;Han, Aijie;Qiao, Yu;
12:408:7 Energy dissipation behaviors of surface treated multi-walled carbon nanotubes-based nanofluid
DOI:10.1016/j.matlet.2011.08.059 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Xu, Xiang;Li, Hui;Xian, Guijun;
12:409:1 Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication
DOI:10.1116/1.3298875 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:9 AU: Lallement, L.;Gosse, C.;Cardinaud, C.;Peignon-Fernandez, M. -C.;Rhallabi, A.;
12:409:2 Modelling of fluorine based high density plasma for the etching of silica glasses
DOI:10.1116/1.3624786 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:3 AU: Lallement, Ludovic;Rhallabi, Ahmed;Cardinaud, Christophe;Fernandez, Marie Claude Peignon;
12:409:3 High-aspect-ratio deep Si etching in SF6/O-2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns
DOI:10.1116/1.3466794 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:10 AU: Maruyama, Takahiro;Narukage, Takeshi;Onuki, Ryota;Fujiwara, Nobuo;
12:409:4 High-aspect-ratio deep Si etching in SF6/O-2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features
DOI:10.1116/1.3466884 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Maruyama, Takahiro;Narukage, Takeshi;Onuki, Ryota;Fujiwara, Nobuo;
12:409:5 Fabrication and characterization of large-core Yb/Al-codoped fused silica waveguides using dry etching
DOI:10.1016/j.optmat.2014.10.048 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Atar, Gil;Ternyak, Orna;Greental, Doron;Eger, David;Chechelnitsky, Galina;Mazurski, Noa;Gouta, Shifra;Elbaz, Yehoudit;Bruner, Ariel;Sfez, Bruno;Ruschin, Shlomo;
12:409:6 Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge: Effect of O-2 on the plasma kinetic properties
DOI:10.1116/1.4853675 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:3 AU: Pateau, Amand;Rhallabi, Ahmed;Fernandez, Marie-Claude;Boufnichel, Mohamed;Roqueta, Fabrice;
12:409:7 Optical quality improvement of rare-earth doped silica layers by CO2 laser irradiation
DOI:10.1016/j.optmat.2011.11.014 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: Atar, Gil;Eger, David;Bruner, Ariel;Sfez, Bruno;Nathan, Menachem;
12:410:1 Surface and volume plasmons in metallic nanospheres in a semiclassical RPA-type approach: Near-field coupling of surface plasmons with the semiconductor substrate
DOI:10.1103/PhysRevB.82.035418 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Jacak, J.;Krasnyj, J.;Jacak, W.;Gonczarek, R.;Chepok, A.;Jacak, L.;
12:410:2 Radius dependent shift in surface plasmon frequency in large metallic nanospheres: Theory and experiment
DOI:10.1063/1.3436618 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Jacak, W.;Krasnyj, J.;Jacak, J.;Gonczarek, R.;Chepok, A.;Jacak, L.;Hu, D. Z.;Schaadt, D.;
12:410:3 Broadband absorption enhancement of thin SOI photodiode with high-density gold nanoparticles
DOI:10.1364/OME.4.000725 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Ono, Atsushi;Enomoto, Yasushi;Matsumura, Yasufumi;Satoh, Hiroaki;Inokawa, Hiroshi;
12:410:4 Plasmons in metallic nanospheres: Towards efficiency enhancement of metallic nano-modified solar cells
DOI:10.1016/j.optmat.2011.02.046 JN:OPTICAL MATERIALS PY:2011
TC:0 AU: Jacak, W.;Krasnyj, J.;Jacak, J.;Jacak, L.;
12:410:5 Sensitivity improvement of silicon-on-insulator photodiode by gold nanoparticles with substrate bias control
DOI:10.1063/1.3622650 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Ono, Atsushi;Matsuo, Yuki;Satoh, Hiroaki;Inokawa, Hiroshi;
12:410:6 Undamped collective surface plasmon oscillations along metallic nanosphere chains
DOI:10.1063/1.3493263 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Jacak, W.;Krasnyj, J.;Jacak, J.;Chepok, A.;Jacak, L.;Donderowicz, W.;Hu, D. Z.;Schaadt, D. M.;
12:410:7 Plasmon enhanced photovoltaic effect in metallically nanomodified photocells
DOI:10.1016/j.solmat.2012.12.040 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:1 AU: Jacak, Witold;Henrykowski, Artur;Marszalski, Krzysztof;
12:411:1 Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices
DOI:10.1016/j.apsusc.2013.04.046 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Kumazaki, Yusuke;Kudo, Tomohito;Yatabe, Zenji;Sato, Taketomo;
12:411:2 Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching
DOI:10.1016/j.apsusc.2010.03.037 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Boukezzata, A.;Keffous, A.;Cheriet, A.;Belkacem, Y.;Gabouze, N.;Manseri, A.;Nezzal, G.;Kechouane, M.;Bright, A.;Guerbous, L.;Menari, H.;
12:411:3 Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
DOI:10.1016/j.tsf.2010.02.029 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Sato, Taketomo;Yoshizawa, Naoki;Hashizume, Tamotsu;
12:411:4 Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
DOI:10.1016/j.tsf.2012.04.031 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Jinbo, Ryohei;Kudo, Tomohito;Yatabe, Zenji;Sato, Taketomo;
12:411:5 Influence of the anodic etching current density on the morphology of the porous SiC layer
DOI:10.1063/1.4869017 JN:AIP ADVANCES PY:2014
TC:1 AU: Anh Tuan Cao;Quynh Ngan Truc Luong;Cao Tran Dao;
12:411:6 Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications
DOI:10.1016/j.apsusc.2010.03.029 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Keffous, A.;Gabouze, N.;Cheriet, A.;Belkacem, Y.;Boukezzata, A.;
12:412:1 Interfacial morphologies and possible mechanisms of a novel low temperature insertion bonding technology based on micro-nano cones array
DOI:10.1016/j.matlet.2012.03.027 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Geng, Wenyan;Chen, Zhuo;Hu, Anmin;Li, Ming;
12:412:2 Low temperature germanium to silicon direct wafer bonding using free radical exposure
DOI:10.1063/1.3360201 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Byun, Ki Yeol;Ferain, Isabelle;Fleming, Pete;Morris, Michael;Goorsky, Mark;Colinge, Cindy;
12:412:3 Influence of nitrogen microwave radicals on sequential plasma activated bonding
DOI:10.1016/j.matlet.2009.11.044 JN:MATERIALS LETTERS PY:2010
TC:9 AU: Howlader, M. M. R.;Wang, J. G.;Kim, M. J.;
12:412:4 Hybrid plasma bonding of germanium and glass wafers at low temperature
DOI:10.1016/j.matlet.2010.04.012 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Howlader, M. M. R.;Kibria, M. G.;Zhang, F.;
12:412:5 Micro-nondestructive evaluation of microelectronics using three-dimensional acoustic imaging
DOI:10.1063/1.3556646 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Zhang, Guang-Ming;Harvey, David M.;Burton, David R.;
12:412:6 Vapor-Assisted Surface Activation Method for Homo- and Heterogeneous Bonding of Cu, SiO2, and Polyimide at 150 degrees C and Atmospheric Pressure
DOI:10.1007/s11664-012-2091-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:6 AU: Shigetou, Akitsu;Suga, Tadatomo;
12:412:7 The Au/Si bonding interface studied by infrared microscope
DOI:10.1016/j.matlet.2010.01.027 JN:MATERIALS LETTERS PY:2010
TC:1 AU: Jing, Errong;Xiong, Bin;Wang, Yuelin;
12:412:8 Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale
DOI:10.1088/0957-4484/21/13/134011 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Kibria, M. G.;Zhang, F.;Lee, T. H.;Kim, M. J.;Howlader, M. M. R.;
12:413:1 Microscaled and nanoscaled platinum sensors
DOI:10.1063/1.3494088 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Rajagopal, Aditya;Walavalkar, Sameer;Chen, Samson;Guo, Luke;Gwinn, Tom;Scherer, Axel;
12:413:2 Experimental determination of thermal profiles during laser spike annealing with quantitative comparison to 3-dimensional simulations
DOI:10.1063/1.4717745 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Iyengar, Krishna;Jung, Byungki;Willemann, Michael;Clancy, Paulette;Thompson, Michael O.;
12:413:3 Simulation of pattern effect induced by millisecond annealing used in advanced metal-oxide-semiconductor technologies
DOI:10.1063/1.3452385 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Cacho, F.;Bono, H.;Beneyton, R.;Dumont, B.;Colin, A.;Morin, P.;
12:413:4 Kinetic Rates of Thermal Transformations and Diffusion in Polymer Systems Measured during Sub-millisecond Laser-Induced Heating
DOI:10.1021/nn300008a JN:ACS NANO PY:2012
TC:11 AU: Jung, Byungki;Sha, Jing;Paredes, Florencia;Chandhok, Manish;Younkin, Todd R.;Wiesner, Ulrich;Ober, Christopher K.;Thompson, Michael O.;
12:413:5 Laser-Induced Sub-millisecond Heating Reveals Distinct Tertiary Ester Cleavage Reaction Pathways in a Photolithographic Resist Polymer
DOI:10.1021/nn500549w JN:ACS NANO PY:2014
TC:2 AU: Jung, Byungki;Satish, Pratima;Bunck, David N.;Dichtel, William R.;Ober, Christopher K.;Thompson, Michael O.;
12:413:6 Controlled roughness reduction of patterned resist polymers using laser-induced sub-millisecond heating
DOI:10.1039/c4tc01548g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Jung, Byungki;Ober, Christopher K.;Thompson, Michael O.;
12:413:7 Thermal decomposition and fractal properties of sputter-deposited platinum oxide thin films
DOI:10.1557/jmr.2011.418 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Mosquera, Adolfo;Horwat, David;Vazquez, Luis;Gutierrez, Alejandro;Erko, Alexei;Anders, Andre;Andersson, Joakim;Endrino, Jose L.;
12:413:8 Optical-thermal simulation applied to the study of the pattern effects induced by the sub-melt laser anneal process in advanced CMOS technologies
DOI:10.1007/s00339-011-6467-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:0 AU: Colin, A.;Morin, P.;Cacho, F.;Bono, H.;Beneyton, R.;Mathiot, D.;Fogarassy, E.;
12:414:1 Formation and 2D-patterning of silver nanoisland film using thermal poling and out-diffusion from glass
DOI:10.1063/1.4840996 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Chervinskii, S.;Sevriuk, V.;Reduto, I.;Lipovskii, A.;
12:414:2 Optical properties of Ag nanoparticle embedded silicate glass prepared by field-assisted diffusion
DOI:10.1007/s00339-010-6166-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Ma, Y.;Lin, J.;Zhu, L. F.;Wei, H. Y.;Li, D. W.;Qin, S.;
12:414:3 Imprinting phase/amplitude patterns in glasses with thermal poling
DOI:10.1016/j.ssi.2010.05.001 JN:SOLID STATE IONICS PY:2010
TC:6 AU: Lipovskii, Andrey A.;Rusan, Vyacheslav V.;Tagantsev, Dmitry K.;
12:414:4 Formation of a buried silver nanowire network in borosilicate glass by solid-state ion exchange assisted by forward and reverse electric fields
DOI:10.1063/1.4895521 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Matsusaka, Souta;Maehara, Naotomo;Hidai, Hirofumi;Chiba, Akira;Morita, Noboru;Itoi, Takaomi;
12:414:5 Field-assisted patterned dissolution of silver nanoparticles in phosphate glass
DOI:10.1063/1.4896135 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Andreyuk, A.;Albert, J.;
12:414:6 SERS-active silver nanoparticle aggregates produced in high-iron float glass by ion exchange process
DOI:10.1016/j.optmat.2011.06.021 JN:OPTICAL MATERIALS PY:2011
TC:5 AU: Karvonen, L.;Chen, Y.;Saynatjoki, A.;Taiviola, K.;Tervonen, A.;Honkanen, S.;
12:414:7 Spatially periodical poling of silica glass
DOI:10.1063/1.4714350 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Sokolov, K.;Melehin, V.;Petrov, M.;Zhurikhina, V.;Lipovskii, A.;
12:414:8 Improvement in laser micromachinability of borosilicate glass by electric-field-assisted solid-state ion exchange
DOI:10.1016/j.scriptamat.2009.10.013 JN:SCRIPTA MATERIALIA PY:2010
TC:4 AU: Matsusaka, Souta;Watanabe, Takehiro;
12:415:1 Research on the growth of ZnO nanowall by soft-solution route
DOI:10.1016/j.matlet.2011.11.027 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Yu, Ling-min;Fan, Xin-hui;Shui, Jing-yi;Cao, Lei;Yan, Wen;
12:415:2 Sonochemical approach for rapid growth of zinc oxide nanowalls
DOI:10.1007/s00339-012-6823-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:5 AU: Nayak, Avinash P.;Katzenmeyer, Aaron M.;Gosho, Yasuhiro;Tekin, Bayram;Islam, M. Saif;
12:415:3 Numerical Evaluation on Heat Transport Characteristics Between Al2O3 and ZnO Materials in Nanoscale Situation
DOI:10.1021/am201194c JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:7 AU: Yang, Ping;Xu, Haifeng;Zhang, Liqiang;Xie, Fangwei;Yang, Jianming;
12:415:4 Scalable network electrical devices using ZnO nanowalls
DOI:10.1088/0957-4484/22/5/055205 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Lee, Chul-Ho;Kim, Yong-Jin;Lee, Joohyung;Hong, Young Joon;Jeon, Jong-Myeong;Kim, Miyoung;Hong, Seunghun;Yi, Gyu-Chul;
12:415:5 Plasma-assisted synthesis of zinc nanowires
DOI:10.1016/j.matchemphys.2011.04.079 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:4 AU: Cong, Ridong;Wang, Qiushi;Zhang, Jian;Wang, Jingshu;Xu, Yongsheng;Jin, Yunxia;Cui, Qiliang;
12:415:6 Numerical and experimental investigation for the effects of thermal loading on properties of nanoscale materials interface
DOI:10.1016/j.msea.2010.06.032 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:5 AU: Liao, Ningbo;Yang, Ping;Zhang, Miao;Xue, Wei;
12:416:1 Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots
DOI:10.1063/1.3473777 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Kim, Je-Hyung;Kwon, Bong-Joon;Cho, Yong-Hoon;Huault, Thomas;Leroux, Mathieu;Brault, Julien;
12:416:2 Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition
DOI:10.1088/0957-4484/25/30/305703 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Kim, Je-Hyung;Elmaghraoui, Donia;Leroux, Mathieu;Korytov, Maxim;Vennegues, Philippe;Jaziri, Sihem;Brault, Julien;Cho, Yong-Hoon;
12:416:3 Structural and optical properties of m-plane GaN/AlGaN quantum wires grown by metalorganic chemical vapor deposition
DOI:10.1063/1.3639278 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Yang, Xuelin;Arita, Munetaka;Kako, Satoshi;Arakawa, Yasuhiko;
12:416:4 Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11-22) ones
DOI:10.1063/1.4889922 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Leroux, M.;Brault, J.;Kahouli, A.;Maghraoui, D.;Damilano, B.;de Mierry, P.;Korytov, M.;Kim, Je-Hyung;Cho, Yong-Hoon;
12:416:5 Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
DOI:10.1016/j.jcrysgro.2012.11.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Brault, J.;Damilano, B.;Kahouli, A.;Chenot, S.;Leroux, M.;Vinter, B.;Massies, J.;
12:416:6 Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots
DOI:10.1063/1.4886177 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Elmaghraoui, D.;Triki, M.;Jaziri, S.;Leroux, M.;Brault, J.;
12:417:1 Efficient Roll-On Transfer Technique for Well-Aligned Organic Nanofibers
DOI:10.1002/smll.201100660 JN:SMALL PY:2011
TC:19 AU: Tavares, Luciana;Kjelstrup-Hansen, Jakob;Rubahn, Horst-Guenter;
12:417:2 Localized and guided electroluminescence from roll printed organic nanofibres
DOI:10.1088/0957-4484/23/42/425203 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Tavares, L.;Kjelstrup-Hansen, J.;Rubahn, H-G;
12:417:3 Reduced bleaching in organic nanofibers by bilayer polymer/oxide coating
DOI:10.1063/1.3427561 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Tavares, L.;Kjelstrup-Hansen, J.;Rubahn, H. -G.;Sturm, H.;
12:417:4 Bicolor Electroluminescent Pixels from Single Active Molecular Material
DOI:10.1021/am9007227 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:2 AU: Viola, Ilenia;Piliego, Claudia;Favaretto, Laura;Barbarella, Giovanna;Cingolani, Roberto;Gigli, Giuseppe;
12:417:5 Morphological Tuning of the Plasmon Dispersion Relation in Dielectric-Loaded Nanofiber Waveguides
DOI:10.1103/PhysRevLett.111.046802 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:6 AU: Leissner, Till;Lemke, Christoph;Fiutowski, Jacek;Radke, Joern Willers;Klick, Alwin;Tavares, Luciana;Kjelstrup-Hansen, Jakob;Rubahn, Horst-Guenter;Bauer, Michael;
12:417:6 Scalable alignment and transfer of nanowires based on oriented polymer nanofibers
DOI:10.1088/0957-4484/21/9/095303 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Yan, Shancheng;Lu, Lanxin;Meng, Hao;Huang, Ningping;Xiao, Zhongdang;
12:418:1 Transmission electron microscopy investigation of AlN growth on Si(111)
DOI:10.1016/j.jcrysgro.2011.11.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Litvinov, D.;Gerthsen, D.;Voehringer, R.;Hu, D. Z.;Schaadt, D. M.;
12:418:2 Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications
DOI:10.1063/1.4754319 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Liu, H. F.;Tan, C. C.;Dalapati, G. K.;Chi, D. Z.;
12:418:3 Crystallographic tilt in GaN-on-Si (111) heterostructures grown by metal-organic chemical vapor deposition
DOI:10.1007/s10853-014-8025-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Liu, H. F.;Zhang, L.;Chua, S. J.;Chi, D. Z.;
12:418:4 Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering
DOI:10.1016/j.apsusc.2009.10.012 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: He, Hong;Cao, Yongge;Fu, Renli;Guo, Wang;Huang, Zhi;Wang, Meili;Huang, Changgang;Huang, Jiquan;Wang, Hai;
12:418:5 Magnetron Sputter Epitaxy and Characterization of Wurtzite AlInN on Si(111) Substrates
DOI:10.1007/s11664-010-1112-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:8 AU: Han, Qifeng;Duan, Chenghong;Du, Guoping;Shi, Wangzhou;Ji, Lechun;
12:419:1 Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection
DOI:10.1155/2014/439212 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Di, Di;Wu, Xuezhong;Dong, Peitao;Wang, Chaoguang;Chen, Jian;Wang, Haoxu;Wang, Junfeng;Li, Shengyi;
12:419:2 Topical Review: Design, Fabrication, and Applications of Hybrid Nanostructured Array
DOI:10.1155/2012/206069 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:3 AU: Zhu, Shaoli;Zhou, Wei;
12:419:3 Optical Characteristics of Rhombic Hybrid Au-Ag Nanostructures Calculated by Discrete Dipole Approximation Method
DOI:10.1166/jctn.2010.1406 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:5 AU: Zhu, Shaoli;Zhou, Wei;
12:419:4 Optical Properties and Immunoassay Applications of Noble Metal Nanoparticles
DOI:10.1155/2010/562035 JN:JOURNAL OF NANOMATERIALS PY:2010
TC:7 AU: Zhu, Shaoli;Zhou, Wei;
12:419:5 Fabrication and characterization of nanostructured metallic arrays with multi-shapes in monolayer and bilayer
DOI:10.1007/s11051-009-9742-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:1 AU: Zhu, Shaoli;Fu, Yongqi;
12:420:1 3D nanostructure reconstruction based on the SEM imaging principle, and applications
DOI:10.1088/0957-4484/25/18/185705 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Zhu, Fu-Yun;Wang, Qi-Qi;Zhang, Xiao-Sheng;Hu, Wei;Zhao, Xin;Zhang, Hai-Xia;
12:420:2 Silicon nanowire based Pirani sensor for vacuum measurements
DOI:10.1063/1.4765665 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Brun, T.;Mercier, D.;Koumela, A.;Marcoux, C.;Duraffourg, L.;
12:420:3 Mechanism study of sidewall damage in deep silicon etch
DOI:10.1007/s00339-014-8752-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Meng, Lingkuan;Yan, Jiang;
12:420:4 Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching
DOI:10.1063/1.3428360 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Mehran, M.;Mohajerzadeh, S.;Sanaee, Z.;Abdi, Y.;
12:420:5 Parameter study for silicon grass formation in Bosch process
DOI:10.1116/1.3280131 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Jung, KyuBong;Song, WooJin;Lim, Hyun Woo;Lee, Caroline Sunyong;
12:421:1 Transient formation of internal potentials in solid electrolytes
DOI:10.1063/1.3366703 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Martin, Bjoern;Kliem, Herbert;
12:421:2 Observation of negative capacitances in Al/P(VDF-TrFE)/SiO2/nSi structures
DOI:10.1063/1.3528119 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Tadros-Morgane, Raphael;Vizdrik, Gennady;Martin, Bjoern;Kliem, Herbert;
12:421:3 Space charges in solid electrolytes detected by the scanning Kelvin probe
DOI:10.1016/j.jnoncrysol.2009.07.038 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:7 AU: Martin, Bjoern;Kliem, Herbert;
12:421:4 Properties of Electrodeposited WO3 Thin Films
DOI:10.1080/15421406.2014.968030 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: de Andrade, Juliana R.;Cesarino, Ivana;Zhang, Rui;Kanicki, Jerzy;Pawlicka, Agnieszka;
12:421:5 Sample length independent conduction current in polyethylene oxide
DOI:10.1063/1.4775783 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Martin, Bjoern;Kliem, Herbert;
12:421:6 Synthesis and structural characterization of tungsten trioxide nanoplatelet-containing thin films prepared by Aqueous Chemical Growth
DOI:10.1016/j.tsf.2012.08.032 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Sone, B. T.;Sithole, J.;Bucher, R.;Mlondo, S. N.;Ramontja, J.;Ray, S. Sinha;Iwuoha, E.;Maaza, M.;
12:422:1 Arrays of GaN nano-pillars fabricated by nickel nano-island mask
DOI:10.1016/j.matlet.2013.07.005 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Lin, Zengqin;Xiu, Xiangqian;Zhang, Shiying;Hua, Xuemei;Xie, Zili;Zhang, Rong;Han, Ping;Zheng, Youdou;
12:422:2 Morphological control over nonpolar GaN nanostructures on (100) gamma-LiAlO2 substrate
DOI:10.1016/j.matlet.2014.05.088 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Chen, Chenlong;Yan, Tao;Hsiang, Wunhuei;Chou, Mitch M. C.;
12:422:3 Epitaxy of triangular GaN nanoislands on (010) beta-LiGaO2 substrate
DOI:10.1016/j.matlet.2014.01.063 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Chen, Chenlong;Huang, Huichun;Lu, Chiaming;Chou, Mitch M. C.;
12:422:4 Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
DOI:10.1016/j.matlet.2011.10.056 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Wei, T. B.;Chen, Y.;Hu, Q.;Yang, J. K.;Huo, Z. Q.;Duan, R. F.;Wang, J. X.;Zeng, Y. P.;Li, J. M.;Liao, Y. X.;Yin, F. T.;
12:422:5 Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method
DOI:10.1016/j.matlet.2013.05.062 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Das, Sachindra Nath;Patra, Subhasish;Kar, Jyoti Prakash;Lee, Min-Jung;Hwang, Sung Hwan;Lee, Tae Il;Myoung, Jae-Min;
12:423:1 Raman scattering on intrinsic surface electron accumulation of InN nanowires
DOI:10.1063/1.3483758 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Jeganathan, K.;Purushothaman, V.;Debnath, R. K.;Calarco, R.;Luth, H.;
12:423:2 Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals
DOI:10.1039/b922196d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:10 AU: Hsieh, Jennifer C.;Yun, Dong Soo;Hu, Evelyn;Belcher, Angela M.;
12:423:3 Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots
DOI:10.1063/1.4758701 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Alvi, N. H.;Soto Rodriguez, P. E. D.;Gomez, V. J.;Kumar, Praveen;Amin, G.;Nur, O.;Willander, M.;Noetzel, R.;
12:423:4 Surface and bulk electronic properties of low temperature synthesized InN microcrystals
DOI:10.1010/j.jcrysgro.2015.01.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Barick, B. K.;Dhar, S.;
12:423:5 Synthesis of InN nanoparticles by rapid thermal ammonolysis
DOI:10.1007/s11051-014-2805-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Simek, Petr;Sedmidubsky, David;Klimova, Katerina;Huber, Stepan;Brazda, Petr;Mikulics, Martin;Jankovsky, Ondrej;Sofer, Zdenek;
12:423:6 Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase
DOI:10.1088/0957-4484/21/18/185706 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Gonzalez, D.;Lozano, J. G.;Herrera, M.;Morales, F. M.;Ruffenach, S.;Briot, O.;Garcia, R.;
12:424:1 Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
DOI:10.1063/1.4813862 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Sasikumar, A.;Arehart, A. R.;Martin-Horcajo, S.;Romero, M. F.;Pei, Y.;Brown, D.;Recht, F.;di Forte-Poisson, M. A.;Calle, F.;Tadjer, M. J.;Keller, S.;DenBaars, S. P.;Mishra, U. K.;Ringel, S. A.;
12:424:2 Spatially-resolved spectroscopic measurements of E-c-0.57 eV traps in AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.4806980 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Cardwell, D. W.;Sasikumar, A.;Arehart, A. R.;Kaun, S. W.;Lu, J.;Keller, S.;Speck, J. S.;Mishra, U. K.;Ringel, S. A.;Pelz, J. P.;
12:424:3 The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
DOI:10.1063/1.4862669 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Liao, W. C.;Chen, Y. L.;Chen, C. H.;Chyi, J. I.;Hsin, Y. M.;
12:424:4 Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor
DOI:10.1063/1.4714536 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Cardwell, D. W.;Arehart, A. R.;Poblenz, C.;Pei, Y.;Speck, J. S.;Mishra, U. K.;Ringel, S. A.;Pelz, J. P.;
12:424:5 The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (vol 104, 033503, 2014)
DOI:10.1063/1.4865900 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liao, W. C.;Chen, Y. L.;Chen, C. H.;Chyi, J. I.;Hsin, Y. M.;
12:424:6 Simulation study of interface traps and bulk traps in n(++)GaN/InAlN/AlN/GaN high electron mobility transistors
DOI:10.1016/j.apsusc.2014.04.078 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Molnar, M.;Donoval, D.;Kuzmik, J.;Marek, J.;Chvala, A.;Pribytny, P.;Mikolasek, M.;Rendek, K.;Palankovski, V.;
12:425:1 Polarization engineered 1-dimensional electron gas arrays
DOI:10.1063/1.3687938 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Nath, Digbijoy N.;Park, Pil Sung;Esposto, Michele;Brown, David;Keller, Stacia;Mishra, Umesh K.;Rajan, Siddharth;
12:425:2 Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
DOI:10.1063/1.3595341 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Umana-Membreno, G. A.;Fehlberg, T. B.;Kolluri, S.;Brown, D. F.;Keller, S.;Mishra, U. K.;Nener, B. D.;Faraone, L.;Parish, G.;
12:425:3 Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure
DOI:10.1063/1.3505319 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Nath, Digbijoy N.;Keller, Stacia;Hsieh, Eric;DenBaars, Steven P.;Mishra, Umesh K.;Rajan, Siddharth;
12:425:4 Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000(1)over-bar) GaN
DOI:10.1063/1.4764070 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Keller, S.;Pfaff, N.;DenBaars, S. P.;Mishra, U. K.;
12:425:5 Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates
DOI:10.1063/1.3488641 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Kolluri, Seshadri;Keller, Stacia;Brown, David;Gupta, Geetak;Mishra, Umesh K.;Denbaars, Steven P.;Rajan, Siddharth;
12:426:1 Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells
DOI:10.1016/j.jcrysgro.2014.11.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Rossow, U.;Hoffmann, L.;Bremers, H.;Buss, E. R.;Ketzer, F.;Langer, T.;Hangleiter, A.;Mehrtens, T.;Schowalter, M.;Rosenauer, A.;
12:426:2 Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography
DOI:10.1063/1.4799382 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Mehrtens, T.;Schowalter, M.;Tytko, D.;Choi, P.;Raabe, D.;Hoffmann, L.;Joenen, H.;Rossow, U.;Hangleiter, A.;Rosenauer, A.;
12:426:3 Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content
DOI:10.1063/1.4795623 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Hoffmann, L.;Bremers, H.;Joenen, H.;Rossow, U.;Schowalter, M.;Mehrtens, T.;Rosenauer, A.;Hangleiter, A.;
12:426:4 Growth of the active zone in nitride based long wavelength laser structures
DOI:10.1016/j.jcrysgro.2010.09.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Rossow, U.;Joenen, H.;Brendel, M.;Draeger, A.;Langer, T.;Hoffmann, L.;Bremers, H.;Hangleiter, A.;
12:426:5 Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region
DOI:10.1016/j.jcrysgro.2012.09.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Rossow, U.;Kruse, A.;Joenen, H.;Hoffmann, L.;Ketzer, F.;Langer, T.;Buss, R.;Bremers, H.;Hangleiter, A.;Mehrtens, T.;Schowalter, M.;Rosenauer, A.;
12:427:1 Uniformity improvement of selectively-grown InGaAs micro-discs on Si
DOI:10.1016/j.jcrysgro.2011.11.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:5 AU: Sugiyama, Masakazu;Kondo, Yoshiyuki;Takenaka, Mitsuru;Takagi, Shinichi;Nakano, Yoshiaki;
12:427:2 Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon
DOI:10.1063/1.4884058 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kjellman, Jon Oyvind;Sugiyama, Masakazu;Nakano, Yoshiaki;
12:427:3 Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE
DOI:10.1016/j.jcrysgro.2009.12.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:10 AU: Deura, Momoko;Kondo, Yoshiyuki;Takenaka, Mitsuru;Takagi, Shinichi;Nakano, Yoshiaki;Sugiyama, Masakazu;
12:427:4 Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate
DOI:10.1016/j.jcrysgro.2013.06.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Suzuki, Hidetoshi;Ito, Daiki;Fukuyama, Atsuhiko;Ikari, Tetsuo;
12:427:5 Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si
DOI:10.1016/j.jcrysgro.2009.11.064 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Kondo, Yoshiyuki;Deura, Momoko;Terada, Yuki;Hoshii, Takuya;Takenaka, Mitsuru;Takagi, Shinichi;Nakano, Yoshiaki;Sugiyama, Masakazu;
12:428:1 Synthesis of silica microcoils by catalyst-free carbothermic method
DOI:10.1016/j.jnoncrysol.2011.07.005 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:0 AU: Du, Hongli;Zheng, Chunrui;
12:428:2 Selective synthesis of SiO2 NWs on Si substrate and their adjustable photoluminescence
DOI:10.1016/j.jnoncrysol.2010.07.020 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:7 AU: Yang, Zhimei;Zhang, Yunsen;Liu, Donglai;Nie, Eryong;Jiao, Zhifeng;Jin, Yong;He, Yi;Gong, Min;Sun, Xiaosong;
12:428:3 Carbonization-assisted integration of silica nanowires to photoresist-derived three-dimensional carbon microelectrode arrays
DOI:10.1088/0957-4484/22/46/465601 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Liu, Dan;Shi, Tielin;Tang, Zirong;Zhang, Lei;Xi, Shuang;Li, Xiaoping;Lai, Wuxing;
12:428:4 Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires
DOI:10.1155/2012/620475 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Xi, Shuang;Shi, Tielin;Xu, Liangliang;Tang, Zirong;Liu, Dan;Li, Xiaoping;Liu, Shiyuan;
12:428:5 Growth of SiO2 hierarchical nanostructure on SiC nanowires using thermal decomposition of ethanol and titanium tetrachloride and its FTIR and PL property
DOI:10.1016/j.matchemphys.2009.09.002 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:8 AU: Kim, Ryongjin;Qin, Weiping;Wei, Guodong;Wang, Guofeng;Wang, Lili;Zhang, Daisheng;Zheng, Kezhi;Liu, Ning;
12:428:6 Preparation and characterization of amorphous SiO2 nanowires
DOI:10.1016/j.mseb.2010.04.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:4 AU: Zhuo, Boshi;Li, Yuguo;Zhang, Xiaokai;Yang, Aichun;
12:429:1 Effect of deposition conditions and thermal annealing on the charge trapping properties of SiNx films
DOI:10.1063/1.3518488 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Ren, Yongling;Weber, Klaus J.;Nursam, Natalita M.;Wang, Da;
12:429:2 Modeling the charge decay mechanism in nitrogen-rich silicon nitride films
DOI:10.1063/1.3571291 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Ren, Yongling;Weber, Klaus J.;Nursam, Natalita M.;
12:429:3 Effects of hydrogen on photoluminescence properties of a-SiNx: H films prepared by VHF-PECVD
DOI:10.1016/j.apsusc.2011.07.071 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Song, Chao;Huang, Rui;Wang, Xiang;Guo, Yanqing;Song, Jie;Zhang, Yixiong;Zheng, Zehao;
12:429:4 Formation and properties of high density Si nanodots
DOI:10.1016/j.apsusc.2010.03.016 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Xu, Jun;Chen, Guran;Song, Chao;Chen, Kunji;Huang, Xinfan;Ma, Zhongyuan;
12:429:5 Kelvin probe force gradient microscopy of charge dissipation in nano thin dielectric layers
DOI:10.1063/1.3651396 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Dunaevskiy, M. S.;Alekseev, P. A.;Girard, P.;Lahderanta, E.;Lashkul, A.;Titkov, A. N.;
12:429:6 Modeling the charge decay mechanism in nitrogen-rich silicon nitride films (vol 98, 122909, 2011)
DOI:10.1063/1.3592676 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Ren, Yongling;Weber, Klaus J.;Nursam, Natalita M.;
12:429:7 Strong orange-red light emissions from amorphous silicon nitride films grown at high pressures
DOI:10.1016/j.scriptamat.2010.01.015 JN:SCRIPTA MATERIALIA PY:2010
TC:2 AU: Huang, Rui;Wang, Xiang;Song, Jie;Guo, Yanqing;Ding, Honglin;Wang, Danqing;Xu, Jun;Chen, Kunji;
12:430:1 The role of charged particles in the positive corona-generated photon count in a rod to plane air gap
DOI:10.1063/1.4819880 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Bian, X. M.;Wan, S. W.;Liu, L.;Wang, Y. J.;MacAlpine, J. M. K.;Chen, L.;Wang, L. M.;Guan, Z. C.;
12:430:2 The influence of hanging water droplets on discharge activity, application to high voltage insulators
DOI:10.1063/1.3559850 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Bojovschi, A.;Rowe, W. S. T.;Wong, K. L.;
12:430:3 Surface roughness effects on the corona discharge intensity of long-term operating conductors
DOI:10.1063/1.4764016 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Bian, X. M.;Chen, L.;Yu, D. M.;Wang, L. M.;Guan, Z. C.;
12:430:4 Impact of electromagnetic radiation on cascaded failure in high voltage insulators
DOI:10.1063/1.3551544 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Bojovschi, A.;Wong, K. L.;Rowe, W. S. T.;
12:430:5 Small onset voltages in negative corona discharges using the edges of gold and aluminum foils as nano-structured electrodes
DOI:10.1063/1.4813556 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Eifert, A.;Baier, T.;Hardt, S.;
12:430:6 Water droplets on a hydrophobic insulator surface under high voltages: A thermal perspective
DOI:10.1063/1.4754689 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Xie, Guoxin;Luo, Jianbin;Yang, Ye;Guo, Dan;Si, Lina;
12:431:1 Electrical properties of Si/Si interfaces by using surface-activated bonding
DOI:10.1063/1.4829676 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Liang, J.;Miyazaki, T.;Morimoto, M.;Nishida, S.;Shigekawa, N.;
12:431:2 Effects of interface state charges on the electrical properties of Si/SiC heterojunctions
DOI:10.1063/1.4898674 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liang, J.;Nishida, S.;Hayashi, T.;Arai, M.;Shigekawa, N.;
12:431:3 Effects of thermal annealing process on the electrical properties of p(+)-Si/n-SiC heterojunctions
DOI:10.1063/1.4873113 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Liang, J.;Nishida, S.;Arai, M.;Shigekawa, N.;
12:431:4 Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
DOI:10.1063/1.3449057 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Gammon, P. M.;Perez-Tomas, A.;Jennings, M. R.;Shah, V. A.;Boden, S. A.;Davis, M. C.;Burrows, S. E.;Wilson, N. R.;Roberts, G. J.;Covington, J. A.;Mawby, P. A.;
12:431:5 Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
DOI:10.1063/1.4807905 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Essig, S.;Moutanabbir, O.;Wekkeli, A.;Nahme, H.;Oliva, E.;Bett, A. W.;Dimroth, F.;
12:431:6 Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 degrees C
DOI:10.1016/j.tsf.2010.08.144 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Howlader, M. M. R.;Zhang, F.;
12:432:1 MOVPE grown periodic AlN/BAIN heterostructure with high boron content
DOI:10.1016/j.jcrysgro.2014.09.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Li, X.;Sundaram, S.;El Gmili, Y.;Genty, F.;Bouchoule, S.;Patriache, G.;Disseix, P.;Reveret, F.;Leymarie, J.;Salvestrini, J. -P.;Dupuis, R. D.;Voss, P. L.;Ougazzaden, A.;
12:432:2 Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2012.07.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Nishio, Mitsuhiro;Kai, Keita;Fujiki, Ryota;Saito, Katsuhiko;Tanaka, Tooru;Guo, Qixin;
12:432:3 Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method
DOI:10.1016/j.jcrysgro.2010.10.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Nishio, Mitsuhiro;Hiwatashi, Kyosuke;Saito, Katsuhiko;Tanaka, Tooru;Guo, Qixin;
12:432:4 Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices
DOI:10.1016/j.mseb.2012.04.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:0 AU: Gomes, J. L.;Rodrigues, S. C. P.;Sipahi, G. M.;Scolfaro, L.;da Silva, E. F., Jr.;
12:432:5 Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE
DOI:10.1016/j.apsusc.2011.03.085 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Saito, K.;Inoue, Y.;Hayashida, Y.;Tanaka, T.;Guo, Q. X.;Nishio, M.;
12:432:6 Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures
DOI:10.1088/0957-4484/21/37/375401 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Rodrigues, Sara C. P.;Sipahi, Guilherme M.;Scolfaro, Luisa M. R.;da Silva, Eronides F., Jr.;
12:433:1 Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films
DOI:10.1063/1.4862958 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Mohanta, Antaryami;Jang, Der-Jun;Wang, Ming-Sung;Tu, L. W.;
12:433:2 Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
DOI:10.1007/s00339-010-5594-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:5 AU: Liu, B.;Zhang, Z.;Zhang, R.;Fu, D. Y.;Xie, Z. L.;Lu, H.;Schaff, W. J.;Song, L. H.;Cui, Y. C.;Hua, X. M.;Han, P.;Zheng, Y. D.;Chen, Y. H.;Wang, Z. G.;
12:433:3 Carrier recombination dynamics in Si doped InN thin films
DOI:10.1063/1.3607271 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Mohanta, Antaryami;Jang, D-J;Lin, G-T;Lin, Y-T;Tu, L. W.;
12:433:4 InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings
DOI:10.1016/j.mssp.2011.11.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:1 AU: Aydogu, Senem;Akarsu, Mustafa;Ozbas, Omer;
12:433:5 Magnetoresistance in a nominally undoped InGaN thin film
DOI:10.1007/s00339-009-5497-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:1 AU: Ding, K.;Zeng, Y. P.;Li, Y. Y.;Cui, L. J.;Wang, J. X.;Lu, H. X.;Cong, P. P.;
12:434:1 Reduction of internal polarization fields in InGaN quantum wells by InGaN/AlGaN ultra-thin superlattice barriers with different indium composition
DOI:10.1063/1.3666060 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Noh, Young-Kyun;Kim, Moon-Deock;Oh, Jae-Eung;
12:434:2 Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer
DOI:10.1016/j.jcrysgro.2010.08.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Song, Hooyoung;Suh, Jooyoung;Kim, Eun Kyu;Baik, Kwang Hyeon;Hwang, Sung-Min;
12:434:3 Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres
DOI:10.1016/j.jcrysgro.2012.09.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Pak, Sang Woo;Lee, Dong Uk;Kim, Eun Kyu;Park, Sung Hyun;Joo, Kisu;Yoon, Euijoon;
12:434:4 Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques
DOI:10.1016/j.jcrysgro.2011.11.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:1 AU: Song, Hooyoung;Kim, Eun Kyu;Baik, Kwang Hyeon;Hwang, Sung-Min;Jang, Yong Woon;Lee, Jeong Yong;
12:434:5 Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
DOI:10.1088/0957-4484/21/13/134026 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Song, Hooyoung;Kim, Jin Soak;Kim, Eun Kyu;Seo, Yong Gon;Hwang, Sung-Min;
12:435:1 Investigations on cobalt doped GaN for spintronic applications
DOI:10.1016/j.jcrysgro.2010.10.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Basha, S. Munawar;Ramasubramanian, S.;Rajagopalan, M.;Kumar, J.;Kang, Tae Won;Subramaniam, N. Ganapathi;Kwon, Younghae;
12:435:2 A density functional theory study of 3d-4f exchange interactions in Cr-Nd codoped GaN
DOI:10.1016/j.jmmm.2014.06.006 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Majid, Abdul;Dar, Amna;
12:435:3 Energetics and electronic structure of GaN codoped with Eu and Si
DOI:10.1103/PhysRevB.85.045203 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Cruz, A. Vallan Bruno;Shinde, Prashant P.;Kumar, Vijay;
12:435:4 Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications
DOI:10.1016/j.jmmm.2011.11.059 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:1 AU: Basha, S. Munawar;Ramasubramanian, S.;Rajagopalan, M.;Kumar, J.;
12:436:1 Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
DOI:10.1063/1.3304004 JN:APPLIED PHYSICS LETTERS PY:2010
TC:36 AU: Cheng, Ji-Hao;Wu, YewChung Sermon;Liao, Wei-Chih;Lin, Bo-Wen;
12:436:2 Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study
DOI:10.1063/1.3327004 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Kim, Y. H.;Ruh, H.;Noh, Y. K.;Kim, M. D.;Oh, J. E.;
12:436:3 Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates
DOI:10.1116/1.3545801 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:2 AU: Wu, Z. H.;Sun, Y. Q.;Yin, J.;Fang, Y. -Y;Dai, J. N.;Chen, C. Q.;Wei, Q. Y.;Li, T.;Sun, W.;Fischer, A. M.;Ponce, F. A.;
12:436:4 High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates
DOI:10.1016/j.tsf.2010.12.005 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Sun, Y. Q.;Wu, Z. H.;Yin, J.;Fang, Y. -Y.;Wang, H.;Yu, C. H.;Hui, Xiong;Chen, C. Q.;Wei, Q. Y.;Li, T.;Sun, K. W.;Ponce, F. A.;
12:436:5 Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates
DOI:10.1016/j.tsf.2013.03.111 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Kong, Bo Hyun;Jung, Byung Oh.;Cho, Hyung Koun;Yoo, Geunho;Nam, Okhyun;
12:437:1 XPS characterization of single crystalline SrLaGa3O7:Nd
DOI:10.1016/j.apsusc.2013.06.075 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Iwanowski, R. J.;Heinonen, M. H.;Pracka, I.;Kachniarz, J.;
12:437:2 X-ray photoelectron spectroscopy studies of Co-doped ZnO-Ga2O3-SiO2 nano-glass-ceramic composites
DOI:10.1016/j.apsusc.2010.12.038 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Duan, Xiulan;Song, Chunfeng;Yu, Fapeng;Yuan, Duorong;Li, Xiaoyu;
12:437:3 The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE
DOI:10.1016/j.apsusc.2010.09.058 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Kumar, Mahesh;Rajpalke, Mohana K.;Roul, Basanta;Bhat, Thirumaleshwara N.;Sinha, Neeraj;Kalghatgi, A. T.;Krupanidhi, S. B.;
12:437:4 Reduction of oxygen impurity at GaN/beta-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux
DOI:10.1016/j.jcrysgro.2011.06.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Kumar, Mahesh;Rajpalke, Mohana K.;Roul, Basanta;Bhat, Thirumaleshwara N.;Dash, S.;Tyagi, A. K.;Kalghatgi, A. T.;Krupanidhi, S. B.;
12:437:5 Synthesis, structure and optical properties of Co-doped MgGa2O4/SiO2 nano-glass-ceramic composites
DOI:10.1016/j.apsusc.2013.03.141 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Duan, Xiulan;Wu, Yuanchun;Wang, Xinqiang;Yu, Fapeng;Jiang, Huaidong;
12:437:6 X-ray photoelectron study of NiAs-type MnTe
DOI:10.1016/j.jallcom.2009.10.223 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:1 AU: Iwanowski, R. J.;Heinonen, M. H.;Witkowska, B.;
12:438:1 Photoluminescence of highly doped Cd1-xMnxS nanocrystals
DOI:10.1016/j.jallcom.2010.03.072 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: Romcevic, M.;Romcevic, N.;Kostic, R.;Klopotowski, L.;Dobrowolski, W. D.;Kossut, J.;Comor, M. I.;
12:438:2 Synthesis and characterization of nanostructured Mn(II) doped antimony-tin oxide (ATO) films on glass
DOI:10.1016/j.apsusc.2013.04.066 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Dua, Laxmikanta;Biswas, Prasanta K.;
12:438:3 Far-infrared spectroscopy of Cd1-xMnxS quantum dots
DOI:10.1016/j.jallcom.2012.01.079 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Kostic, R.;Damjanovic, M. Petrovic;Romcevic, N.;Romcevic, M.;Stojanovic, D.;Comor, M.;
12:438:4 Investigation of crystal structure and optical properties of Cd1-xMnxS epilayers
DOI:10.1116/1.3610173 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:0 AU: Kim, D. J.;Choi, Y. D.;Lee, J. W.;
12:438:5 Magnetic field influence on optical properties of Cd1-xMnxS (x=0; 0.3) quantum dots: Photoluminescence study
DOI:10.1016/j.jallcom.2012.11.112 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Romcevic, N.;Petrovic-Damjanovic, M.;Romcevic, M.;Gilic, M.;Klopotowski, L.;Dobrowolski, W. D.;Kossut, J.;Jankovic, I. A.;Comor, M. I.;
12:439:1 Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1-xInxN alloys
DOI:10.1016/j.jallcom.2010.05.049 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Tit, Nacir;
12:439:2 Bowing Character in Wurtzite ZnO-Based Ternary Alloys
DOI:10.1007/s11664-012-2188-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Tit, Nacir;Dagher, Sawsan;Ayesh, Ahmad;Haik, Yousef;
12:439:3 Lattice dynamics and thermal properties of CaxMg1-xS ternary alloys
DOI:10.1016/j.commatsci.2012.11.060 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:1 AU: Choutri, H.;Ghebouli, M. A.;Bouarissa, N.;
12:439:4 Photoluminescence studies of (Mg, Zn)O epilayers via metalorganic vapor phase epitaxy on m-plane ZnO substrates
DOI:10.1063/1.3569746 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Liu, K.;Pierce, J. M.;Ali, Y. S.;Krahnert, A.;Adekore, B. T.;
12:439:5 Comparison of Bowing Behaviors Between III-V and II-VI Common-Cation Semiconductor Ternary Alloys
DOI:10.1007/s11664-009-0972-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:3 AU: Tit, Nacir;Amrane, Noureddine;Reshak, Ali Hussain;
12:440:1 Monte Carlo study of phonon dynamics in III-V compounds
DOI:10.1063/1.3553409 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Hamzeh, Hani;Aniel, Frederic;
12:440:2 Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon-plasmon coupling
DOI:10.1063/1.3665218 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Tea, Eric;Hamzeh, Hani;Aniel, Frederic;
12:440:3 Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model
DOI:10.1063/1.3533963 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Tea, E.;Aniel, F.;
12:440:4 Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor
DOI:10.1063/1.4901331 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Chung, Pei-Kang;Yen, Shun-Tung;
12:441:1 Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
DOI:10.1016/j.jcrysgro.2013.11.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Kuwano, Noriyuki;Ryu, Yuki;Mitsuhara, Masatoshi;Lin, Chia-Hung;Uchiyama, Shota;Maruyama, Takahiro;Suzuki, Yohei;Naritsuka, Shigeya;
12:441:2 Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.10.195 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Lin, Chia-Hung;Abe, Ryota;Maruyama, Takahiro;Naritsuka, Shigeya;
12:441:3 Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.10.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Lin, Chia-Hung;Abe, Ryota;Uchiyama, Shota;Maruyama, Takahiro;Naritsuka, Shigeya;
12:441:4 Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.11.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Naritsuka, S.;Lin, C. H.;Uchiyama, S.;Maruyama, T.;
12:441:5 Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal-organic molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.10.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Lin, Chia-Hung;Abe, Ryota;Maruyama, Takahiro;Naritsuka, Shigeya;
12:442:1 High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation
DOI:10.1007/s11664-013-2590-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:7 AU: Stranz, Andrej;Waag, Andreas;Peiner, Erwin;
12:442:2 Top-Down Silicon Nanowire-Based Thermoelectric Generator: Design and Characterization
DOI:10.1007/s11664-012-1901-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:8 AU: Li, Y.;Buddharaju, K.;Singh, N.;Lee, S. J.;
12:442:3 Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics
DOI:10.1007/s11664-009-1015-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:5 AU: Stranz, A.;Soekmen, Ue;Wehmann, H. -H.;Waag, A.;Peiner, E.;
12:442:4 Top-Down Silicon Nanowire-Based Thermoelectric Generator: Design and Characterization (vol 41, pg 989, 2012)
DOI:10.1007/s11664-012-2070-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Li, Y.;Buddharaju, K.;Singh, N.;Lee, S. J.;
12:443:1 Recent advances in preparation of high-purity glasses based on arsenic chalcogenides for fiber optics
DOI:10.1016/j.jnoncrysol.2010.11.057 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:22 AU: Churbanov, M. F.;Snopatin, G. E.;Shiryaev, V. S.;Plotnichenko, V. G.;Dianov, E. M.;
12:443:2 Chalcogenide step index and microstructured single mode fibers
DOI:10.1016/j.jnoncrysol.2010.11.090 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:16 AU: Conseil, C.;Coulombier, Q.;Boussard-Pledel, C.;Troles, J.;Brilland, L.;Renversez, G.;Mechin, D.;Bureau, B.;Adam, J. L.;Lucas, J.;
12:443:3 Trends and prospects for development of chalcogenide fibers for mid-infrared transmission
DOI:10.1016/j.jnoncrysol.2012.12.048 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:12 AU: Shiryaev, V. S.;Churbanov, M. F.;
12:443:4 Preparation of composite materials for fiber optics based on chalcogenide glasses containing ZnS(ZnSe):Cr(2(+)) crystals
DOI:10.1016/j.jnoncrysol.2012.12.021 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:0 AU: Karaksina, E. V.;Shiryaev, V. S.;Ketkova, L. A.;
12:443:5 Correlation between native As2Se3 preform purity and glass optical fiber mechanical strength
DOI:10.1016/j.materresbull.2013.08.004 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Danto, Sylvain;Dubernet, Marion;Giroire, Baptiste;Musgraves, J. David;Wachtel, Peter;Hawkins, Thomas;Ballato, John;Richardson, Kathleen;
12:443:6 Preparation of high purity glasses in the Ga-Ge-As-Se system
DOI:10.1016/j.optmat.2014.04.021 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Shiryaev, V. S.;Velmuzhov, A. P.;Tang, Z. Q.;Churbanov, M. F.;Seddon, A. B.;
12:444:1:1 Influence of the size of facets on point focus solar concentrators
DOI:10.1016/j.renene.2010.08.038 JN:RENEWABLE ENERGY PY:2011
TC:9 AU: Riveros-Rosas, David;Sanchez-Gonzalez, Marcelino;Arancibia-Bulnes, Camilo A.;Estrada, Claudio A.;
12:444:1:2 Mirrors array for a solar furnace: Optical analysis and simulation results
DOI:10.1016/j.renene.2013.09.006 JN:RENEWABLE ENERGY PY:2014
TC:1 AU: Jafrancesco, D.;Sansoni, P.;Francini, F.;Contento, G.;Cancro, C.;Privato, C.;Graditi, G.;Ferruzzi, D.;Mercatelli, L.;Sani, E.;Fontani, D.;
12:444:1:3 Optical performance of solar reflective concentrators: A simple method for optical assessment
DOI:10.1016/j.renene2013.01.037 JN:RENEWABLE ENERGY PY:2013
TC:2 AU: Chemisana, D.;Barrau, J.;Rosell, J. I.;Abdel-Mesih, B.;Souliotis, M.;Badia, F.;
12:444:1:4 A high-irradiance solar furnace for photovoltaic characterization and nanomaterial synthesis
DOI:10.1016/j.solmat.2010.11.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:14 AU: Gordon, Jeffrey M.;Babai, Dotan;Feuermann, Daniel;
12:444:2:1 Prediction and optimization of the performance of parabolic solar dish concentrator with sphere receiver using analytical function
DOI:10.1016/j.renene.2012.10.046 JN:RENEWABLE ENERGY PY:2013
TC:5 AU: Huang, Weidong;Huang, Farong;Hu, Peng;Chen, Zeshao;
12:444:2:2 Optical modeling for a two-stage parabolic trough concentrating photovoltaic/thermal system using spectral beam splitting technology
DOI:10.1016/j.solmat.2010.05.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:30 AU: Jiang, Shouli;Hu, Peng;Mo, Songping;Chen, Zeshao;
12:444:2:3 Spectral splitting module geometry that utilizes light trapping
DOI:10.1016/j.solmat.2012.09.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:6 AU: Goldschmidt, Jan Christoph;Do, Chau;Peters, Marius;Goetzberger, Adolf;
12:445:1 Electron holography of devices with epitaxial layers
DOI:10.1063/1.4898859 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Gribelyuk, M. A.;Ontalus, V.;Baumann, F. H.;Zhu, Z.;Holt, J. R.;
12:445:2 Electron holography for analysis of deep submicron devices: Present status and challenges
DOI:10.1116/1.3207964 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Ikarashi, Nobuyuki;Toda, Akio;Uejima, Kazuya;Yako, Koichi;Yamamoto, Toyoji;Hane, Masami;Sato, Hiroshi;
12:445:3 Electron holography characterization of the electrostatic potential of thin high-kappa dielectric film embedded in gate stack
DOI:10.1063/1.3652770 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Yao, Y.;Yang, Y.;Duan, X. F.;Wang, Y. G.;Yu, R. C.;Xu, Q. X.;
12:445:4 In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor
DOI:10.1063/1.3700723 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Ikarashi, Nobuyuki;Takeda, Hiroshi;Yako, Koichi;Hane, Masami;
12:445:5 Electron holography of Si:C films and Si:C-based devices
DOI:10.1063/1.3630029 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Gribelyuk, M. A.;Adam, T. N.;Ontalus, V.;Ronsheim, P. R.;Kimball, L.;Schonenberg, K. T.;
12:445:6 Suppression of boron diffusion in deep submicron devices
DOI:10.1116/1.3656376 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Gribelyuk, Michael A.;Oldiges, Phil;Ronsheim, Paul A.;Yuan, Jun;Kimball, Leon;
12:446:1 High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
DOI:10.1063/1.3285309 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Koblmueller, G.;Chu, R. M.;Raman, A.;Mishra, U. K.;Speck, J. S.;
12:446:2 Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness
DOI:10.1063/1.4896192 JN:AIP ADVANCES PY:2014
TC:0 AU: Mishra, Manna Kumari;Sharma, Rajesh K.;Manchanda, Rachna;Bag, Rajesh K.;Thakur, Om Prakash;Muralidharan, Rangarajan;
12:446:3 Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures
DOI:10.1007/s11664-012-2158-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Tiras, E.;Ardali, S.;Arslan, E.;Ozbay, E.;
12:446:4 Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
DOI:10.1007/s11664-012-2150-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:2 AU: Wong, Yuen-Yee;Huang, Wei-Ching;Trinh, Hai-Dang;Yang, Tsung-Hsi;Chang, Jet-Rung;Chen, Micheal;Chang, Edward Yi;
12:446:5 Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
DOI:10.1080/14786435.2010.525543 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:8 AU: Tiras, E.;Balkan, N.;Ardali, S.;Gunes, M.;Fontaine, C.;Arnoult, A.;
12:447:1 Facile Synthesis of Few-Layer Graphene with a Controllable Thickness Using Rapid Thermal Annealing
DOI:10.1021/am3000177 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:16 AU: Chu, Jae Hwan;Kwak, Jinsung;Kwon, Tae-Yang;Park, Soon-Dong;Go, Heungseok;Kim, Sung Youb;Park, Kibog;Kang, Seoktae;Kwon, Soon-Yong;
12:447:2 One-step graphene coating of heteroepitaxial GaN films
DOI:10.1088/0957-4484/23/43/435603 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Choi, Jae-Kyung;Huh, Jae-Hoon;Kim, Sung-Dae;Moon, Daeyoung;Yoon, Duhee;Joo, Kisu;Kwak, Jinsung;Chu, Jae Hwan;Kim, Sung Youb;Park, Kibog;Kim, Young-Woon;Yoon, Euijoon;Cheong, Hyeonsik;Kwon, Soon-Yong;
12:447:3 WETTING Unobtrusive graphene coatings
DOI:10.1038/nmat3259 JN:NATURE MATERIALS PY:2012
TC:8 AU: Mugele, Frieder;
12:448:1 Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire
DOI:10.1016/j.jcrysgro.2010.03.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Laskar, Masihhur R.;Kadir, Abdul;Rahman, A. A.;Shah, A. P.;Hatui, Nirupam;Gokhale, M. R.;Bhattacharya, Arnab;
12:448:2 Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film
DOI:10.1063/1.4728993 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Huang, Qiangcan;Li, Shuping;Cai, Duanjun;Kang, Junyong;
12:448:3 Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE
DOI:10.1016/j.jcrysgro.2010.10.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Murakami, Hisashi;Cho, Hyun Chol;Suematsu, Mayu;Togashi, Rie;Kumagai, Yoshinao;Toba, Ryuichi;Koukitu, Akinori;
12:448:4 Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
DOI:10.1016/j.jcrysgro.2010.08.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Laskar, Masihhur R.;Ganguli, Tapas;Kadir, Abdul;Hatui, Nirupam;Rahman, A. A.;Shah, A. P.;Gokhale, M. R.;Bhattacharya, Arnab;
12:448:5 Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10(1)over-bar3) crystal on GaAs(110) by MOVPE
DOI:10.1016/j.jcrysgro.2012.12.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Cho, H. C.;Togashi, R.;Murakami, H.;Kumagai, Y.;Koukitu, A.;
12:449:1 The band structure of carbonmonoxide on 2-D Au islands on graphene
DOI:10.1016/j.apsusc.2014.01.089 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Katsiev, K.;Losovyj, Y.;Lozova, N.;Wang, Lu;Mei, Wai-Ning;Zheng, Jiaxin;Vescovo, E.;Liu, Li;Dowben, P. A.;Goodman, D. W.;
12:449:2 Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN
DOI:10.1016/j.jallcom.2010.01.152 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Koubaa, T.;Dammak, M.;Kammoun, M.;Jadwisienczak, W. M.;Lozykowski, H. J.;
12:449:3 Order-disorder transition for corrugated Au layers
DOI:10.1016/j.apsusc.2010.01.106 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Fukutani, Keisuke;Lozova, N.;Zuber, S. M.;Dowben, P. A.;Galiy, P.;Losovyj, Yaroslav B.;
12:449:4 The effective surface Debye temperature of Yb:GaN
DOI:10.1016/j.matlet.2011.02.042 JN:MATERIALS LETTERS PY:2011
TC:4 AU: McHale, S. R.;McClory, J. W.;Petrosky, J. C.;Wu, J.;Palai, R.;Dowben, P. A.;Ketsman, I.;
12:449:5 Enhanced electron-phonon coupling at the Au/Mo(112) surface
DOI:10.1103/PhysRevB.86.205432 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;Formation of polar InN with surface Fermi level near the valence band;maximum by means of ammonia nitridation;PHYSICAL REVIEW B;86;24;245304;10.1103/PhysRevB.86.245304;DEC 10 2012;2012;Development of InN films for devices is hindered due to metallic In;clusters, formed readily during growth, and unintentional n-type;conductivity of the nominally undoped films, including surface;electron-accumulation layers via the Fermi level pinning into the;conduction band. Plasma nitridation eliminates even large In clusters;from the surface by changing them to two-dimensional InN [Yamaguchi and;Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar;approach, that is, nitridation of In-covered surfaces with ammonia (NH3);to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001);substrates. By means of scanning tunneling microscopy and spectroscopy,;as well as photoelectron spectroscopy, we show that this simple NH3;nitridation provides the hitherto not reported formation of polar;InN(000-1) films with the surface Fermi level close to the valence band;maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84,;205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304;1;0;0;0;1;1098-0121;WOS:000312065400006;;;J;Ghosh, Sankha;English, Niall J.;Ab initio study on optoelectronic properties of interstitially versus;substitutionally doped titania;PHYSICAL REVIEW B;86;23;235203;10.1103/PhysRevB.86.235203;DEC 10 2012;2012;Density functional theory calculations were performed for Cr, N, and C;monodoping in both rutile and anatase phases of crystalline titania. The;formation and binding energies, electronic structure, and optical;properties were determined. It was found that although C has a;predominant preference for occupying a lattice O-site, N has higher;preference for interstitial occupancy in the vicinity of an O atom in;anatase, whereas both prefer to maintain interstitial occupancy in;rutile, albeit with both N and C exhibiting a relatively higher;preference for anatase over rutile. Furthermore, Cr is more;energetically stable in the rutile phase relative to anatase for;substitutional doping, albeit with comparable formation energies for;both interstitial and substitutional doping. Interstitial C-impurities;were observed to occupy the oxygen lattice sites in anatase, but not in;rutile. In terms of N-doping, it was found that interstitial doping;exhibits higher visible light photoactivity than substitutional doping.;1;0;0;0;1;1098-0121;WOS:000312064700003;;;J;Howie, Ross T.;Scheler, Thomas;Guillaume, Christophe L.;Gregoryanz, Eugene;Proton tunneling in phase IV of hydrogen and deuterium;PHYSICAL REVIEW B;86;21;214104;10.1103/PhysRevB.86.214104;DEC 10 2012;2012;Using in situ optical spectroscopy we have investigated the temperature;stability of the mixed atomic and molecular phases IV of dense deuterium;and hydrogen. Through a series of low-temperature experiments at high;pressures, we observe phase III-to-IV transformation, imposing;constraints on the P-T phase diagrams. The spectral features of the;phase IV-III transition and differences in appearances of the isotopes;Raman spectra strongly indicate the presence of proton tunneling in;phase IV. No differences between isotopes were observed in absorption;spectroscopic studies, resulting in identical values for the band gap.;The extrapolation of the combined band gap yields 375 GPa as the minimum;transition pressure to the metallic state of hydrogen (deuterium). The;minute changes in optical spectra above 275 GPa might suggest the;presence of a new solid modification of hydrogen (deuterium), closely;related structurally to phase IV. DOI: 10.1103/PhysRevB. 86.214104;15;1;0;0;15;1098-0121;WOS:000312063700001;;;J;Hrahsheh, Fawaz;Hoyos, Jose A.;Vojta, Thomas;Rounding of a first-order quantum phase transition to a strong-coupling;critical point;PHYSICAL REVIEW B;86;21;214204;10.1103/PhysRevB.86.214204;DEC 10 2012;2012;We investigate the effects of quenched disorder on first-order quantum;phase transitions on the example of the N-color quantum Ashkin-Teller;model. By means of a strong-disorder renormalization group, we;demonstrate that quenched disorder rounds the first-order quantum phase;transition to a continuous one for both weak and strong coupling between;the colors. In the strong-coupling case, we find a distinct type of;infinite-randomness critical point characterized by additional internal;degrees of freedom. We investigate its critical properties in detail and;find stronger thermodynamic singularities than in the random transverse;field Ising chain. We also discuss the implications for higher spatial;dimensions as well as unusual aspects of our renormalization-group;scheme. DOI: 10.1103/PhysRevB.86.214204;Hoyos, Jose/F-2742-2012;2;0;0;0;2;1098-0121;WOS:000312063700002;;;J;Huevonen, D.;Zhao, S.;Ehlers, G.;Mansson, M.;Gvasaliya, S. N.;Zheludev, A.;Excitations in a quantum spin liquid with random bonds;PHYSICAL REVIEW B;86;21;214408;10.1103/PhysRevB.86.214408;DEC 10 2012;2012;We present the results of an inelastic neutron-scattering study on two;bond disordered quasi-two-dimensional quantum magnets;(C4H12N2)Cu-2(Cl1-xBrx)(6) with x = 0.035 and 0.075. We observe an;increase of spin gap, a reduction of magnon bandwidth, and a decrease of;magnon lifetimes compared to the x = 0 sample. Additional magnon damping;is observed at higher energies away from the zone center, which is found;to follow the density of single-particle states. DOI:;10.1103/PhysRevB.86.214408;Instrument, CNCS/B-4599-2012; Ehlers, Georg/B-5412-2008; Huvonen, Dan/A-6664-2008; Mansson, Martin/C-1134-2014;8;0;0;0;8;1098-0121;WOS:000312063700005;;;J;Hwang, Kyusung;Park, Kwon;Kim, Yong Baek;Influence of Dzyaloshinskii-Moriya interactions on magnetic structure of;a spin-1/2 deformed kagome lattice antiferromagnet;PHYSICAL REVIEW B;86;21;214407;10.1103/PhysRevB.86.214407;DEC 10 2012;2012;Motivated by the recent neutron-scattering experiment on Rb2Cu3SnF12;[Nature Phys. 6, 865 (2010)], we investigate the effect of;Dzyaloshinskii-Moriya interactions in a theoretical model for the;magnetic structure of this material. Considering the valence bond solid;ground state, which has a 12-site unit cell, we develop the bond;operator mean-field theory. It is shown that the Dzyaloshinskii-Moriya;interactions significantly modify the triplon dispersions around the;Gamma point and cause a shift of the spin-gap (the minimum triplon gap);position from the K to Gamma point in the first Brillouin zone. The spin;gap is also evaluated in exact diagonalization studies on a 24-site;cluster. We discuss a magnetic transition induced by the;Dzyaloshinskii-Moriya interactions in the bond operator framework.;Moreover, the magnetization process under external magnetic fields is;studied within the exact diagonalization approach. We find that the;results of both approaches are consistent with the experimental;findings. DOI: 10.1103/PhysRevB.86.214407;3;0;0;0;3;1098-0121;WOS:000312063700004;;;J;Ignacio, M.;Pierre-Louis, O.;Impalement dynamics and Brownian motion of solid islands on nanopillars;PHYSICAL REVIEW B;86;23;235410;10.1103/PhysRevB.86.235410;DEC 10 2012;2012;We study the dynamics of solid islands deposited on nanopillars using;kinetic Monte Carlo simulations. The islands are initially placed on the;top of the pillars, in the so-called Cassie-Baxter state. For high;pillars, the dynamics is divided into two phases. The first phase;corresponds to the deterministic and irreversible impalement of the;island. The dynamics of this phase is governed by surface diffusion.;Once the island has collapsed, a second phase is observed where the;island exhibits Brownian motion along the pillars, characterized by a;diffusion constant D-i and a kinetic coefficient K-i accounting for the;interaction of the island with the top of the pillars. The random walk;stops when the island reaches the bottom of the substrate, where it;sticks irreversibly. When the island wettability is small, the island;diffusion constant D-i is controlled by adatom diffusion, and scales as;the inverse of the number of atoms in the island. In contrast, for large;wettabilities, we observe that D-i oscillates as the island size is;increased. The minimum of the oscillations corresponds to;nucleation-limited dynamics, where D-i is independent of the island;size. We also determine the time for partial irreversible collapse on;shorter pillars, leading to the so-called Wenzel state. Finally, we;discuss the orders of magnitude of the typical duration of these;processes.;2;0;0;0;2;1098-0121;WOS:000312064700007;;;J;Jarlborg, T.;Barbiellini, B.;Markiewicz, R. S.;Bansil, A.;Different doping from apical and planar oxygen vacancies in;Ba2CuO4-delta and La2CuO4-delta: First-principles band structure;calculations;PHYSICAL REVIEW B;86;23;235111;10.1103/PhysRevB.86.235111;DEC 10 2012;2012;First-principles band structure calculations for large supercells of;Ba2CuO4-delta and La2CuO4-delta with different distributions and;concentrations of oxygen vacancies show that the effective doping on;copper sites strongly depends on where the vacancy is located. A vacancy;within the Cu layer produces a weak doping effect while a vacancy;located at an apical oxygen site acts as a stronger electron dopant on;the copper layers and gradually brings the electronic structure close to;that of La2-xSrxCuO4. These effects are robust and only depend;marginally on lattice distortions. Our results show that deoxygenation;can reduce the effect of traditional La/Sr or La/Nd substitutions. Our;study clearly identifies location of the dopant in the crystal structure;as an important factor in doping of the cuprate planes.;6;0;0;0;6;1098-0121;WOS:000312064700002;;;J;Kunimori, K.;Nakamura, M.;Nohara, H.;Tanida, H.;Sera, M.;Nishioka, T.;Matsumura, M.;Unusual magnetic order in CeT2Al10 (T = Ru, Os) in comparison with;localized NdFe2Al10;PHYSICAL REVIEW B;86;24;245106;10.1103/PhysRevB.86.245106;DEC 10 2012;2012;We have investigated the magnetic properties in the well localized;compound NdFe2Al10 and the Kondo semiconductor CeT2Al10 (T = Ru, Os) to;clarify the origin of the unusual magnetic order in CeT2Al10. In;NdFe2Al10, the experimental results of the magnetic properties could be;reproduced very well by the mean-field calculation for the;two-sublattice model. In CeT2Al10 we could reproduce the anisotropic;magnetic susceptibility in the paramagnetic region above 60-100 K very;well by the mean-field calculation for the two-sublattice model;introducing an anisotropic exchange interaction and the recently;determined crystalline electric field (CEF) level scheme from Strigari;et al. [Phys. Rev. B 86, 081105 (2012)]. However, in the;antiferromagnetic (AFM) ordered state, we could not reproduce the;experimental results at all in the framework of the mean-field;calculation for the two-sublattice model. We propose that although the;magnetic properties in the paramagnetic region above 60-100 K could be;understood well by a localized picture, the ordered state could not, and;that the c-f hybridization, especially along the a axis, is associated;with the unusual magnetic order in CeT2Al10. DOI:;10.1103/PhysRevB.86.245106;Tanida, Hiroshi/E-1878-2013;14;0;0;0;14;1098-0121;WOS:000312065400003;;;J;Lee, Jin Bae;Hong, Won G.;Kim, Hae Jin;Jaglicic, Z.;Jazbec, S.;Wencka, M.;Jelen, A.;Dolinsek, J.;Canted antiferromagnetism on a nanodimensional spherical surface;geometry: The case of MnCO3 small hollow nanospheres;PHYSICAL REVIEW B;86;22;224407;10.1103/PhysRevB.86.224407;DEC 10 2012;2012;Canted antiferromagnetism on a nanodimensional spherical surface;geometry was investigated on manganese carbonate MnCO3 small hollow;nanospheres of mean diameter 7.0 +/- 0.3 nm and shell thickness of 0.7;nm, by performing magnetic measurements and specific heat study, in;comparison to the bulk form of the same material. Contrary to the;expectation that small magnetic nanoparticles become superparamagnetic,;the phase transition to the canted antiferromagnetic (AFM) state in the;MnCO3 hollow nanospheres is preserved and retains, at a qualitative;level, all the features of the canted AFM state of the bulk material. At;a quantitative level, some significant differences between the hollow;nanospheres and the bulk were observed, which can all be explained by;the weakened interspin interactions in the hollow nanospheres due to;reduced atomic coordination by the neighboring atoms. This makes the;canted AFM structure of the hollow nanospheres more soft and fragile;with respect to external forces like the magnetic field, as compared to;the rigid and robust structure of the bulk material.;1;0;0;0;1;1098-0121;WOS:000312064300002;;;J;Levkivskyi, Ivan P.;Froehlich, Juerg;Sukhorukov, Eugene V.;Theory of fractional quantum Hall interferometers;PHYSICAL REVIEW B;86;24;245105;10.1103/PhysRevB.86.245105;DEC 10 2012;2012;Interference of fractionally charged quasiparticles is expected to lead;to Aharonov-Bohm oscillations with periods larger than the flux quantum.;However, according to the Byers-Yang theorem, observables of an;electronic system are invariant under an adiabatic insertion of a;quantum of singular flux. We resolve this seeming paradox by considering;a microscopic model of electronic interferometers made from a quantum;Hall liquid at filling factor 1/m with the shape of a Corbino disk. In;such interferometers, the quantum Hall edge states are utilized in place;of optical beams, the quantum point contacts play the role of beam;splitters connecting different edge channels, and Ohmic contacts;represent a source and drain of quasiparticle currents. Depending on the;position of Ohmic contacts, one distinguishes interferometers of;Fabry-Perot (FP) and Mach-Zehnder (MZ) type. An approximate ground state;of such interferometers is described by a Laughlin-type wave function,;and low-energy excitations are incompressible deformations of this;state. We construct a low-energy effective theory by restricting the;microscopic Hamiltonian of electrons to the space of incompressible;deformations and show that the theory of the quantum Hall edge so;obtained is a generalization of a chiral conformal field theory. In our;theory, a quasiparticle tunneling operator is found to be a;single-valued function of tunneling point coordinates, and its phase;depends on the topology determined by the positions of Ohmic contacts.;We describe strong coupling of the edge states to Ohmic contacts and the;resulting quasiparticle current through the interferometer with the help;of a master equation. We find that the coherent contribution to the;average quasiparticle current through MZ interferometers does not vanish;after summation over quasiparticle degrees of freedom. However, it;acquires oscillations with the electronic period, in agreement with the;Byers-Yang theorem. Importantly, our theory does not rely on any ad hoc;constructions, such as Klein factors, etc. When the magnetic flux;through an FP interferometer is varied with a modulation gate, current;oscillations have the quasiparticle periodicity, thus allowing for;spectroscopy of quantum Hall edge states. DOI:;10.1103/PhysRevB.86.245105;2;0;0;0;2;1098-0121;WOS:000312065400002;;;J;Li, Chun-Mei;Luo, Hu-Bin;Hu, Qing-Miao;Yang, Rui;Johansson, Borje;Vitos, Levente;Role of magnetic and atomic ordering in the martensitic transformation;of Ni-Mn-In from a first-principles study;PHYSICAL REVIEW B;86;21;214205;10.1103/PhysRevB.86.214205;DEC 10 2012;2012;The composition-dependent lattice parameters, crystal structure, elastic;properties, magnetic moment, and electronic structure of Ni2Mn1+xIn1-x;(0 <= x <= 0.6) are studied by using first-principles calculations. It;is shown that the martensitic phase transition (MPT) from cubic L2(1) to;tetragonal L1(0) accompanies theMn(Mn)-Mn-In ferromagnetic (FM) to;antiferromagnetic (AFM) transition, at around the critical composition x;= 0.32, in agreement with the experimental measurement. The Mn-In atomic;disorder leads to decreasing stability of the martensite relative to the;austenite, which depresses the MPT. The shear elastic constant C' of the;parent phase first decreases slightly with increasing x and then remains;almost unchanged above x = 0.32, indicating C' alone cannot account for;the increase of the MPT temperature with x. The total magnetic moments;for the L2(1) phase are in good agreement with those determined by;experiments, whereas for the L1(0) phase they are slightly larger than;the experimental data due to the possibleMn-In atomic disorder in the;sample. The calculated density of states demonstrate that the covalent;bonding between the minority spin states of Ni and In plays an important;role in both the magnetic and structural stability. DOI:;10.1103/PhysRevB.86.214205;Hu, Qing-Miao/D-3345-2014;5;0;0;0;5;1098-0121;WOS:000312063700003;;;J;Liu, Bin;Seko, Atsuto;Tanaka, Isao;Cluster expansion with controlled accuracy for the MgO/ZnO pseudobinary;system via first-principles calculations;PHYSICAL REVIEW B;86;24;245202;10.1103/PhysRevB.86.245202;DEC 10 2012;2012;Using the cluster analysis of the structure population (CASP) method,;error of cluster expansion (CE) can be controlled. Combining the CASP-CE;with a systematic set of first-principles total energies, a model;wide-gap pseudobinary system with simple crystal structures MgO-ZnO is;revisited. Ground-state structures are exhaustively searched for both;rocksalt and wurtzite structures. A few structures as yet unreported are;found. The vibrational contribution to the Gibbs free-energy is;evaluated by first-principles phonon calculations within the;quasiharmonic approximation. Monte Carlo simulations are then made to;compute grand potentials of two structures using the thermodynamic;integration. DOI: 10.1103/PhysRevB.86.245202;Tanaka, Isao/B-5941-2009; Liu, Bin/N-9955-2014;1;1;0;0;1;1098-0121;WOS:000312065400005;;;J;Liu, Pan;Santana, Juan A. Colon;Dai, Qilin;Wang, Xianjie;Dowben, Peter A.;Tang, Jinke;Sign of the superexchange coupling between next-nearest neighbors in EuO;PHYSICAL REVIEW B;86;22;224408;10.1103/PhysRevB.86.224408;DEC 10 2012;2012;The sign of the superexchange coupling J(2) between next-nearest;neighboring Eu2+ magnetic moments in EuO is a matter subject to debate.;We have obtained evidence that this coupling is of antiferromagnetic;nature (J(2) < 0). EuO thin films grown at different temperatures;suggest that lattice expansion results in enhancement of T-C as clearly;observed in stoichiometric EuO films grown on CaF2 substrates. Resonant;photoemission spectroscopy provides compelling evidence of strong;hybridization between O 2p and Eu 5d6s6p weighted bands, suggesting that;strong superexchange may be mediated by oxygen, thus consistent with the;observed antiferromagnetic behavior between the next-nearest neighboring;Eu atoms via nearest neighbor oxygen in EuO.;Dai, Qilin/K-1437-2013;2;0;0;0;2;1098-0121;WOS:000312064300003;;;J;Luisier, Mathieu;Atomistic modeling of anharmonic phonon-phonon scattering in nanowires;PHYSICAL REVIEW B;86;24;245407;10.1103/PhysRevB.86.245407;DEC 10 2012;2012;Phonon transport is simulated in ultrascaled nanowires in the presence;of anharmonic phonon-phonon scattering. A modified valence-force-field;model containing four types of bond deformation is employed to describe;the phonon band structure. The inclusion of five additional bond;deformation potentials allows us to account for anharmonic effects.;Phonon-phonon interactions are introduced through inelastic scattering;self-energies solved in the self-consistent Born approximation in the;nonequilibrium Green's function formalism. After calibrating the model;with experimental data, the thermal current, resistance, and;conductivity of < 100 >-, < 110 >-, and < 111 >-oriented Si nanowires;with different lengths and temperatures are investigated in the presence;of anharmonic phonon-phonon scattering and compared to their ballistic;limit. It is found that all the simulated thermal currents exhibit a;peak at temperatures around 200 K if phonon scattering is turned on;while they monotonically increase when this effect is neglected.;Finally, phonon transport through Si-Ge-Si nanowires is considered. DOI:;10.1103/PhysRevB.86.245407;12;1;0;0;12;1098-0121;WOS:000312065400007;;;J;Nemirovskii, Sergey K.;Fluctuations of the vortex line density in turbulent flows of quantum;fluids;PHYSICAL REVIEW B;86;22;224505;10.1103/PhysRevB.86.224505;DEC 10 2012;2012;We present an analytical study of fluctuations of the vortex line;density (VLD) in turbulent flows of;quantum fluids. Two cases are considered. The first is the;counterflowing (Vinen) turbulence, where the vortex lines are;disordered, and the evolution of quantity L(t) obeys the Vinen equation.;The second case is the fluctuations of the VLD in a single vortex;bundle, which develops inside the domain of the concentrated;normal-fluid vorticity. The dynamics of the vortex bundle is described;by the Hall-Vinen-Bekarevich-Khalatnikov (HVBK) equations. The latter;case is of special interest, because the set of the quantum vortex;bundles is believed to mimic classical hydrodynamic turbulence. In;steady states the VLD is related to the normal velocity as L = (rho;gamma/rho(s))(2)upsilon(2)(n) for the Vinen case. In the vortex bundle;case, which appears inside the domain of a concentrated vorticity of;normal fluid, the stationary quantity L can be found from the matching;of velocities and is described by L = vertical bar del x v(n)vertical;bar/kappa. In nonstationary situations, and particularly in the;fluctuating turbulent flow, there is a retardation between the;instantaneous value of the normal velocity and the quantity L. This;retardation tends to decrease in accordance with the inner dynamics,;which has a relaxation character. In both cases, the relaxation dynamics;of the VLD is related to fluctuations of the relative velocity. However,;for the Vinen case the rate of temporal change for L(t) is directly;dependent upon delta v(ns), whereas for HVBK dynamics it depends on del;x delta v(ns). Therefore, for the disordered case the spectrum coincides with the spectrum omega(-5/3). In the;case of the bundle arrangement, the spectrum of the VLD varies (at;different temperatures) from omega(1/3) to omega(-5/3) dependencies.;This conclusion may serve as a basis for the experimental determination;of what kind of turbulence is implemented in different types of;generation.;0;0;0;0;0;1098-0121;WOS:000312064300005;;;J;Peelaers, H.;Van de Walle, C. G.;Effects of strain on band structure and effective masses in MoS2;PHYSICAL REVIEW B;86;24;241401;10.1103/PhysRevB.86.241401;DEC 10 2012;2012;We use hybrid density functional theory to explore the band structure;and effective masses of MoS2, and the effects of strain on the;electronic properties. Strain allows engineering the magnitude as well;as the nature (direct versus indirect) of the band gap. Deformation;potentials that quantify these changes are reported. The calculations;also allow us to investigate the transition in band structure from bulk;to monolayer, and the nature and degeneracy of conduction-band valleys.;Investigations of strain effects on effective masses reveal that small;uniaxial stresses can lead to large changes in the hole effective mass.;DOI: 10.1103/PhysRevB.86.241401;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;56;3;0;0;56;1098-0121;WOS:000312065400001;;;J;Phien, Ho N.;Vidal, Guifre;McCulloch, Ian P.;Infinite boundary conditions for matrix product state calculations;PHYSICAL REVIEW B;86;24;245107;10.1103/PhysRevB.86.245107;DEC 10 2012;2012;We propose a formalism to study dynamical properties of a quantum;many-body system in the thermodynamic limit by studying a finite system;with "infinite boundary conditions" where both finite-size effects and;boundary effects have been eliminated. For one-dimensional systems,;infinite boundary conditions are obtained by attaching two boundary;sites to a finite system, where each of these two sites effectively;represents a semi-infinite extension of the system. One can then use;standard finite-size matrix product state techniques to study a region;of the system while avoiding many of the complications normally;associated with finite-size calculations such as boundary Friedel;oscillations. We illustrate the technique with an example of time;evolution of a local perturbation applied to an infinite;(translationally invariant) ground state, and use this to calculate the;spectral function of the S = 1 Heisenberg spin chain. This approach is;more efficient and more accurate than conventional simulations based on;finite-size matrix product state and density-matrix;renormalization-group approaches. DOI: 10.1103/PhysRevB.86.245107;McCulloch, Ian/A-6037-2011;McCulloch, Ian/0000-0002-8983-6327;6;0;0;0;6;1098-0121;WOS:000312065400004;;;J;Polyakov, O. P.;Corbetta, M.;Stepanyuk, O. V.;Oka, H.;Saletsky, A. M.;Sander, D.;Stepanyuk, V. S.;Kirschner, J.;Spin-dependent Smoluchowski effect;PHYSICAL REVIEW B;86;23;235409;10.1103/PhysRevB.86.235409;DEC 10 2012;2012;Electron charge near atomically sharp corrugations at the surfaces of a;solid tends to spill out and smoothen the abrupt variation of the;positions of the positively charged atomic nuclei. The reason is that;electrons are much less localized than nuclei. This has been discussed;already some 70 years ago by Smoluchowski [R. Smoluchowski, Phys. Rev.;60, 661 (1941)], and the corresponding effect of charge redistribution;near surface corrugations bears his name. The Smoluchowski effect;focuses on the total electron charge density. It neglects that;electrons-in addition to charge-also carry a spin. We discuss;spin-dependent electron spill out and demonstrate in a combined;theoretical and experimental work that compelling consequences for;spin-polarization and spin-dependent transport arise at the edges of;magnetic nanostructures due to the spin-dependent Smoluchowski effect.;We find a variation of the tunnel magnetoresistance ratio of more than;20% on a length scale of a few atomic diameters.;3;0;0;0;3;1098-0121;WOS:000312064700006;;;J;Rajeswaran, B.;Khomskii, D. I.;Zvezdin, A. K.;Rao, C. N. R.;Sundaresan, A.;Field-induced polar order at the Neel temperature of chromium in;rare-earth orthochromites: Interplay of rare-earth and Cr magnetism;PHYSICAL REVIEW B;86;21;214409;10.1103/PhysRevB.86.214409;DEC 10 2012;2012;We report field-induced switchable polarization (P similar to 0.2-0.8 mu;C/cm(2)) below the Neel temperature of chromium (T-N(Cr)) in weakly;ferromagnetic rare-earth orthochromites, RCrO3 (R = rare earth) but only;when the rare-earth ion is magnetic. Intriguingly, the polarization in;ErCrO3 (T-C = 133 K) disappears at a spin-reorientation (Morin);transition (T-SR similar to 22 K) below which the weak ferromagnetism;associated with the Cr sublattice also disappears, demonstrating the;crucial role of weak ferromagnetism in inducing the polar order.;Further, the polarization (P) is strongly influenced by an applied;magnetic field, indicating a strong magnetoelectric effect. We suggest;that the polar order occurs in RCrO3, due to the combined effect of the;poling field that breaks the symmetry and the exchange field on the R;ion from the Cr sublattice that stabilizes the polar state. We propose;that a similar mechanism could work in the isostructural rare-earth;orthoferrites RFeO3 as well. DOI: 10.1103/PhysRevB.86.214409;Athinarayanan, Sundaresan/B-2176-2010; Zvezdin, Anatoly/K-2072-2013;24;1;0;0;24;1098-0121;WOS:000312063700006;;;J;Rhim, Jun-Won;Park, Kwon;Self-similar occurrence of massless Dirac particles in graphene under a;magnetic field;PHYSICAL REVIEW B;86;23;235411;10.1103/PhysRevB.86.235411;DEC 10 2012;2012;Intricate interplay between the periodicity of the lattice structure and;that of the cyclotron motion gives rise to a well-known self-similar;fractal structure of the energy eigenvalue, known as the Hofstadter;butterfly, for an electron moving in lattice under magnetic field.;Connected with the n = 0 Landau level, the central band of the;Hofstadter butterfly is especially interesting in the honeycomb lattice.;While the entire Hofstadter butterfly can be in principle obtained by;solving Harper's equations numerically, the weak-field limit, most;relevant for experiment, is intractable owing to the fact that the size;of the Hamiltonian matrix, which needs to be diagonalized, diverges. In;this paper, we develop an effective Hamiltonian method that can be used;to provide an accurate analytic description of the central Hofstadter;band in the weak-field regime. One of the most important discoveries;obtained in this work is that massless Dirac particles always exist;inside the central Hofstadter band no matter how small the magnetic flux;may become. In other words, with its bandwidth broadened by the lattice;effect, the n = 0 Landau level contains massless Dirac particles within;itself. In fact, by carefully analyzing the self-similar recursive;pattern of the central Hofstadter band, we conclude that massless Dirac;particles should occur under arbitrary magnetic field. As a corollary,;the central Hofstadter band also contains a self-similar structure of;recursive Landau levels associated with such massless Dirac particles.;To assess the experimental feasibility of observing massless Dirac;particles inside the central Hofstadter band, we compute the width of;the central Hofstadter band as a function of magnetic field in the;weak-field regime.;5;0;0;0;5;1098-0121;WOS:000312064700008;;;J;Robinson, Zachary R.;Tyagi, Parul;Mowll, Tyler R.;Ventrice, Carl A., Jr.;Hannon, James B.;Argon-assisted growth of epitaxial graphene on Cu(111);PHYSICAL REVIEW B;86;23;235413;10.1103/PhysRevB.86.235413;DEC 10 2012;2012;The growth of graphene by catalytic decomposition of ethylene on Cu(111);in an ultrahigh vacuum system was investigated with low-energy electron;diffraction, low-energy electron microscopy, and atomic force;microscopy. Attempts to form a graphene overlayer using ethylene at;pressures as high as 10 mTorr and substrate temperatures as high as 900;degrees C resulted in almost no graphene growth. By using an argon;overpressure, the growth of epitaxial graphene on Cu(111) was achieved.;The suppression of graphene growth without the use of an argon;overpressure is attributed to Cu sublimation at elevated temperatures.;During the initial stages of growth, a random distribution of rounded;graphene islands is observed. The predominant rotational orientation of;the islands is within +/- 1 degrees of the Cu(111) substrate lattice.;Robinson, Zachary/B-5128-2013;11;1;0;0;11;1098-0121;WOS:000312064700010;;;J;Sheps, Tatyana;Brocious, Jordan;Corso, Brad L.;Guel, O. Tolga;Whitmore, Desire;Durkaya, Goeksel;Potma, Eric O.;Collins, Philip G.;Four-wave mixing microscopy with electronic contrast of individual;carbon nanotubes;PHYSICAL REVIEW B;86;23;235412;10.1103/PhysRevB.86.235412;DEC 10 2012;2012;We review an extensive study of the factors that influence the intensity;of coherent, nonlinear four-wave mixing (FWM) in carbon nanotubes, with;particular attention to the variability inherent to single-walled carbon;nanotubes (SWNTs). Through a combination of spatial imaging and;spectroscopy applied to hundreds of individual SWNTs in optoelectronic;devices, the FWM response is shown to vary systematically with;free-carrier concentration. This dependence is manifested both in the;intrinsic SWNT band structure and also by extrinsic and environmental;effects. We demonstrate the sensitivity of the SWNT FWM signal by;investigating SWNTs transferred from one substrate to another, before;and after the introduction of chemical damage, and with chemical and;electrostatic doping. The results demonstrate FWM as a sensitive;technique for interrogating SWNT optoelectronic properties.;3;0;0;0;3;1098-0121;WOS:000312064700009;;;J;Tian, Zhiting;Esfarjani, Keivan;Chen, Gang;Enhancing phonon transmission across a Si/Ge interface by atomic;roughness: First-principles study with the Green's function method;PHYSICAL REVIEW B;86;23;235304;10.1103/PhysRevB.86.235304;DEC 10 2012;2012;Knowledge on phonon transmittance as a function of phonon frequency and;incidence angle at interfaces is vital for multiscale modeling of heat;transport in nanostructured materials. Although thermal conductivity;reduction in nanostructured materials can usually be described by phonon;scattering due to interface roughness, we show how a Green's function;method in conjunction with the Landauer formalism suggests that;interface roughness induced by atomic mixing can increase phonon;transmission and interfacial thermal conductance. This is an attempt to;incorporate first-principles force constants derived from ab initio;density-functional theory (DFT) into Green's function calculation for;infinitely large three-dimensional crystal structure. We also;demonstrate the importance of accurate force constants by comparing the;phonon transmission and thermal conductance using force constants;obtained from semiempirical Stillinger-Weber potential and;first-principles DFT calculations.;Chen, Gang/J-1325-2014;Chen, Gang/0000-0002-3968-8530;14;0;0;0;14;1098-0121;WOS:000312064700004;;;J;Uhm, Sang Hoon;Yeom, Han Woong;Electron-phonon interaction of one-dimensional and two-dimensional;surface states in indium adlayers on the Si(111) surface;PHYSICAL REVIEW B;86;24;245408;10.1103/PhysRevB.86.245408;DEC 10 2012;2012;We performed angle-resolved photoelectron spectroscopy measurements on;one-and two-dimensional (1D and 2D) metallic surface states in indium;layers on the Si(111) surface as a function of temperature. The;temperature dependence of surface-state energy widths was used to;estimate the electron-phonon coupling constant lambda. The 2D metallic;surface states of the root 7 x root 3-In layer above one monolayer;exhibit lambda = 0.8 similar to 1.0, similar to the value of bulk indium;0.9. This is discussed in the light of a recent structure model with a;double indium layer and the relatively high superconducting transition;temperature of this surface. On the other hand, the lambda's of two 1D;surface states of the 4 x 1-In surface with one monolayer of indium are;much higher than that of root 7 x root 3-In, reaching 1.8, which is the;largest ever reported for a surface state. The origin of the enhanced;electron-phonon coupling and its relationship to the charge-density-wave;phase transition of this surface are discussed. DOI:;10.1103/PhysRevB.86.245408;1;0;0;0;1;1098-0121;WOS:000312065400008;;;J;Vekilova, O. Yu.;Simak, S. I.;Ponomareva, A. V.;Abrikosov, I. A.;Influence of Ni on the lattice stability of Fe-Ni alloys at multimegabar;pressures;PHYSICAL REVIEW B;86;22;224107;10.1103/PhysRevB.86.224107;DEC 10 2012;2012;The lattice stability trends of the primary candidate for Earth's core;material, the Fe-Ni alloy, were examined from first principles. We;employed the exact muffin-tin orbital method (EMTO) combined with the;coherent potential approximation (CPA) for the treatment of alloying;effects. It was revealed that high pressure reverses the trend in the;relative stabilities of the body-centered cubic (bcc), face-centered;cubic (fcc), and hexagonal close-packed (hcp) phases observed at ambient;conditions. In the low pressure region the increase of Ni concentration;in the Fe-Ni alloy enhances the bcc phase destabilization relative to;the more close-packed fcc and hcp phases. However, at 300 GPa (Earth's;core pressure), the effect of Ni addition is opposite. The reverse of;the trend is associated with the suppression of the ferromagnetism of Fe;when going from ambient pressures to pressure conditions corresponding;to those of Earth's core. The first-principles results are explained in;the framework of the canonical band model.;0;0;0;0;0;1098-0121;WOS:000312064300001;;;J;Wang, Kang;Light wave states in quasiperiodic metallic structures;PHYSICAL REVIEW B;86;23;235110;10.1103/PhysRevB.86.235110;DEC 10 2012;2012;We investigate the light wave states in the octagonal and decagonal;quasiperiodic metallic structures by considering their respective;approximants at different orders. The mechanisms underlying the light;wave behaviors are studied in relation to various structure parameters;and configurations. We show that the formation of the first passbands,;that delimit the photonic band gaps and determine the plasma gaps,;involves only the lowest frequency resonance modes inside the fat tiles,;and that light localization occurs due to resonances in high symmetry;local centers as well as in the fragments of such centers, formed by the;skinny tiles. The structure filling rate affects the localized state;frequencies relative to the first passbands, as well as the plasma;frequency levels, by modulating the frequency levels of the resonance;modes and the widths of the passbands. The results of this study can be;generalized to other metallic quasiperiodic and related structures.;1;0;0;0;1;1098-0121;WOS:000312064700001;;;J;Singh, Shashi B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M. H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.;Correlation between p-type conductivity and electronic structure of;Cr-deficient CuCr1-xO2 (x = 0-0.1);PHYSICAL REVIEW B;86;24;241103;10.1103/PhysRevB.86.241103;DEC 7 2012;2012;The correlation between the p-type hole conduction and the electronic;structures of Cr-deficient CuCr1-xO2 (x = 0-0.1) compounds was;investigated using O K-, Cu, and Cr L-3,L-2-edge x-ray absorption;near-edge structure (XANES), scanning photoelectron microscopy, and;x-ray emission spectroscopy measurements. XANES spectra reveal a gradual;increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr;deficiency x, whereas, the valence of Cr remains constant as Cr3+. These;results indicate that the p-type conductivity in the CuCr1-xO2 samples;is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct;Cu1+-O-Cu2+ holemechanism. Remarkable Cr-deficiency-induced changes in;the densities of Cu 3d, Cu 3d-O 2p, andO2p states at or near the;valence-band maximum or the Fermi level were also observed. In addition,;a crossover of conductionmechanism from thermally activated (TA) hopping;to a combination of TA and Mott's three-dimensional variable range;hopping occurs around 250 K.;Yamane, Hiroyuki/K-5297-2013;0;0;0;0;0;1098-0121;WOS:000312025700004;;;J;Bossy, Jacques;Ollivier, Jacques;Schober, Helmut;Glyde, H. R.;Excitations of amorphous solid helium;PHYSICAL REVIEW B;86;22;224503;10.1103/PhysRevB.86.224503;DEC 7 2012;2012;We present neutron scattering measurements of the dynamic structure;factor S(Q,omega) of amorphous solid helium confined in 47-angstrom pore;diameter MCM-41 at pressure 48.6 bars. At low temperature T = 0.05 K, we;observe S(Q,omega) of the confined quantum amorphous solid plus the bulk;polycrystalline solid between the MCM-41 powder grains. No liquidlike;phonon-roton modes, other sharply defined modes at low energy (omega <;1.0 meV), or modes unique to a quantum amorphous solid that might;suggest superflow are observed. Rather, the S(Q, omega) of confined;amorphous and bulk polycrystalline solid appear to be very similar. At;higher temperature (T > 1 K), the amorphous solid in the MCM-41 pores;melts to a liquid which has a broad S(Q,omega) peaked near omega similar;or equal to 0, characteristic of normal liquid He-4 under pressure.;Expressions for the S(Q,omega) of amorphous and polycrystalline solid;helium are presented and compared. In previous measurements of liquid;He-4 confined in MCM-41 at lower pressure, the intensity in the liquid;roton mode decreases with increasing pressure until the roton vanishes;at the solidification pressure (38 bars), consistent with no roton in;the solid observed here.;2;0;0;0;2;1098-0121;WOS:000321857700002;;;J;Joly, Yves;Collins, S. P.;Grenier, Stephane;Tolentino, Helio C. N.;De Santis, Maurizio;Birefringence and polarization rotation in resonant x-ray diffraction;PHYSICAL REVIEW B;86;22;220101;10.1103/PhysRevB.86.220101;DEC 7 2012;2012;Birefringence can contribute to x-ray resonant Bragg diffraction and;likely explains recent novel data collected on CuO. We prove these;statements using ab initio simulations which reproduce the experimental;polarization effects quantitatively. We show that an unrotated;polarization signal-ruled out in resonant magnetic scattering within the;electric dipole approximation-arises from the dynamic change in;polarization inside the material. We are able to reproduce all the;related behavior with circular polarization and its dependence on the;angle of rotation about the Bragg wave vector. We provide a tool to;disentangle the various physical origins of the polarization rotation,;providing a more complete understanding of the illuminated material.;TOLENTINO, HELIO/J-1894-2014; Grenier, Stephane/N-1986-2014;TOLENTINO, HELIO/0000-0003-4032-5988; Grenier,;Stephane/0000-0001-8370-7375;12;1;0;0;12;1098-0121;WOS:000321857700001;;;J;Kovacs, Istvan A.;Igloi, Ferenc;Cardy, John;Corner contribution to percolation cluster numbers;PHYSICAL REVIEW B;86;21;214203;10.1103/PhysRevB.86.214203;DEC 7 2012;2012;We study the number of clusters in two-dimensional (2d) critical;percolation, N-Gamma, which intersect a given subset of bonds, Gamma. In;the simplest case, when Gamma is a simple closed curve, N-Gamma is;related to the entanglement entropy of the critical diluted quantum;Ising model, in which Gamma represents the boundary between the;subsystem and the environment. Due to corners in Gamma there are;universal logarithmic corrections to N-Gamma, which are calculated in;the continuum limit through conformal in-variance, making use of the;Cardy-Peschel formula. The exact formulas are confirmed by large scale;Monte Carlo simulations. These results are extended to anisotropic;percolation where they confirm a result of discrete holomorphicity.;Kovacs, Istvan/A-8447-2013;5;0;0;0;5;1098-0121;WOS:000312023100003;;;J;Komsa, Hannu-Pekka;Krasheninnikov, Arkady V.;Effects of confinement and environment on the electronic structure and;exciton binding energy of MoS2 from first principles;PHYSICAL REVIEW B;86;24;241201;10.1103/PhysRevB.86.241201;DEC 7 2012;2012;Using GW first-principles calculations for few-layer and bulk MoS2, we;study the effects of quantum confinement on the electronic structure of;this layered material. By solving the Bethe-Salpeter equation, we also;evaluate the exciton energy in these systems. Our results are in;excellent agreement with the available experimental data. Exciton;binding energy is found to dramatically increase from 0.1 eV in the bulk;to 1.1 eV in the monolayer. The fundamental band gap increases as well,;so that the optical transition energies remain nearly constant. We also;demonstrate that environments with different dielectric constants have a;profound effect on the electronic structure of the monolayer. Our;results can be used for engineering the electronic properties of MoS2;and other transition-metal dichalcogenides and may explain the;experimentally observed variations in the mobility of monolayer MoS2.;Krasheninnikov, Arkady/M-3020-2013;Krasheninnikov, Arkady/0000-0003-0074-7588;50;4;0;0;50;1098-0121;WOS:000312025700003;;;J;Ciuchi, S.;Fratini, S.;Electronic transport and quantum localization effects in organic;semiconductors;PHYSICAL REVIEW B;86;24;245201;10.1103/PhysRevB.86.245201;DEC 7 2012;2012;We explore the charge transport mechanism in organic semiconductors;based on a model that accounts for the thermal intermolecular disorder;at work in pure crystalline compounds, as well as extrinsic sources of;disorder that are present in current experimental devices. Starting from;the Kubo formula, we describe a theoretical framework that relates the;time-dependent quantum dynamics of electrons to the frequency-dependent;conductivity. The electron mobility is then calculated through a;relaxation time approximation that accounts for quantum localization;corrections beyond Boltzmann theory, and allows us to efficiently;address the interplay between highly conducting states in the band range;and localized states induced by disorder in the band tails. The;emergence of a "transient localization" phenomenon is shown to be a;general feature of organic semiconductors that is compatible with the;bandlike temperature dependence of the mobility observed in pure;compounds. Carrier trapping by extrinsic disorder causes a crossover to;a thermally activated behavior at low temperature, which is;progressively suppressed upon increasing the carrier concentration, as;is commonly observed in organic field-effect transistors. Our results;establish a direct connection between the localization of the electronic;states and their conductive properties, formalizing phenomenological;considerations that are commonly used in the literature.;Fratini, Simone/A-4692-2009;Fratini, Simone/0000-0002-4750-3241;4;0;0;0;4;1098-0121;WOS:000312025700001;;;J;Huang, Bing;Lee, Hoonkyung;Defect and impurity properties of hexagonal boron nitride: A;first-principles calculation;PHYSICAL REVIEW B;86;24;245406;10.1103/PhysRevB.86.245406;DEC 7 2012;2012;In this paper, we have systematically studied the structural and;electronic properties of vacancy defects and carbon impurity in;hexagonal boron nitride (h-BN) by using both normal GGA calculations and;advanced hybrid functional calculations. Our calculations show that the;defect configurations and the local bond lengths around defects are;sensitive to their charge states. The highest negative defect charge;states are largely determined by the nearly-free-electron state at the;conduction band minimum of BN. Generally, the in-gap defect levels;obtained from hybrid functional calculations are much deeper than those;obtained from normal GGA calculations. The formation energies of neutral;defects calculated by hybrid functional and GGA are close to each other,;but the defect transition energy levels are quite different between GGA;and hybrid functional calculations. Finally, we show that the charged;defect configurations as well as the transition energy levels exhibit;interesting layer effects.;Huang, Bing/D-8941-2011;Huang, Bing/0000-0001-6735-4637;8;0;0;0;8;1098-0121;WOS:000312025700002;;;J;Maassen, T.;Vera-Marun, I. J.;Guimaraes, M. H. D.;van Wees, B. J.;Contact-induced spin relaxation in Hanle spin precession measurements;PHYSICAL REVIEW B;86;23;235408;10.1103/PhysRevB.86.235408;DEC 7 2012;2012;In the field of spintronics the "conductivity mismatch" problem remains;an important issue. Here the difference between the resistance of;ferromagnetic electrodes and a (high resistive) transport channel causes;injected spins to be backscattered into the leads and to lose their spin;information. We study the effect of the resulting contact-induced spin;relaxation on spin transport, in particular on nonlocal Hanle precession;measurements. As the Hanle line shape is modified by the contact-induced;effects, the fits to Hanle curves can result in incorrectly determined;spin transport properties of the transport channel. We quantify this;effect that mimics a decrease of the spin relaxation time of the channel;reaching more than four orders of magnitude and a minor increase of the;diffusion coefficient by less than a factor of two. Then we compare the;results to spin transport measurements on graphene from the literature.;We further point out guidelines for a Hanle precession fitting procedure;that allows the reliable extraction of spin transport properties from;measurements.;Vera-Marun, Ivan/A-4704-2013; Guimaraes, Marcos/K-1940-2013;Vera-Marun, Ivan/0000-0002-6347-580X;;14;1;0;0;14;1098-0121;WOS:000312024900002;;;J;Murch, K. W.;Ginossar, E.;Weber, S. J.;Vijay, R.;Girvin, S. M.;Siddiqi, I.;Quantum state sensitivity of an autoresonant superconducting circuit;PHYSICAL REVIEW B;86;22;220503;10.1103/PhysRevB.86.220503;DEC 7 2012;2012;When a frequency chirped excitation is applied to a classical high-Q;nonlinear oscillator, its motion becomes dynamically synchronized to the;drive and large oscillation amplitude is observed, provided the drive;strength exceeds the critical threshold for autoresonance. We;demonstrate that when such an oscillator is strongly coupled to a;quantized superconducting qubit, both the effective nonlinearity and the;threshold become a nontrivial function of the qubit-oscillator detuning.;Moreover, the autoresonant threshold is dependent on the quantum state;of the qubit and may be used to realize a high-fidelity, latching;readout whose speed is not limited by the oscillator Q.;1;0;0;0;1;1098-0121;WOS:000312024300001;;;J;Ondrejkovic, P.;Kempa, M.;Vysochanskii, Y.;Saint-Gregoire, P.;Bourges, P.;Rushchanskii, K. Z.;Hlinka, J.;Neutron scattering study of ferroelectric Sn2P2S6 under pressure;PHYSICAL REVIEW B;86;22;224106;10.1103/PhysRevB.86.224106;DEC 7 2012;2012;Ferroelectric phase transition in the semiconductor Sn2P2S6 single;crystal has been studied by means of neutron scattering in the;pressure-temperature range adjacent to the anticipated tricritical;Lifshitz point (p approximate to 0.18 GPa, T approximate to 296 K). The;observations reveal a direct ferroelectric-paraelectric phase transition;in the whole investigated pressure range (0.18-0.6 GPa). These results;are in a clear disagreement with phase diagrams assumed in numerous;earlier works, according to which a hypothetical intermediate;incommensurate phase extends over several or even tens of degrees in the;0.5 GPa pressure range. Temperature dependence of the anisotropic;quasielastic diffuse scattering suggests that polarization fluctuations;present above T-C are strongly reduced in the ordered phase. Still, the;temperature dependence of the ((2) over bar 00) Bragg reflection;intensity at p = 0.18 GPa can be remarkably well modeled assuming the;order-parameter amplitude growth according to the power law with;logarithmic corrections predicted for a uniaxial ferroelectric;transition at the tricritical Lifshitz point.;Hlinka, Jiri/G-5985-2014; Ondrejkovic, Petr/G-6654-2014; Kempa, Martin/G-8830-2014;1;0;0;0;1;1098-0121;WOS:000312024300002;;;J;Svindrych, Z.;Janu, Z.;Kozlowski, A.;Honig, J. M.;Low-temperature magnetic anomaly in magnetite;PHYSICAL REVIEW B;86;21;214406;10.1103/PhysRevB.86.214406;DEC 7 2012;2012;We have studied experimentally the responses of high-quality single;crystals of stoichiometric synthetic magnetite to applied weak dc and ac;magnetic fields in the range of 6-60 K, far below the Verwey transition.;The results can be compared to so-called magnetic after effects (MAE);measurements, which are the most extensive magnetic measurements of;magnetite at these temperatures. We present a novel point of view on the;relaxation phenomena encountered at these temperatures-the;low-temperature anomaly, addressing the striking difference between the;results of conventional ac susceptibility measurements and those;accompanying MAE measurements, i.e., periodic excitations with strong;magnetic pulses. We also draw a connection between this anomaly and the;so-called glasslike transition, and discuss possible mechanisms;responsible for these effects.;janu, zdenek/G-9113-2014;0;0;0;0;0;1098-0121;WOS:000312023100001;;;J;Tarantini, C.;Lee, S.;Kametani, F.;Jiang, J.;Weiss, J. D.;Jaroszynski, J.;Folkman, C. M.;Hellstrom, E. E.;Eom, C. B.;Larbalestier, D. C.;Artificial and self-assembled vortex-pinning centers in superconducting;Ba(Fe1-xCox)(2)As-2 thin films as a route to obtaining very high;critical-current densities;PHYSICAL REVIEW B;86;21;214504;10.1103/PhysRevB.86.214504;DEC 7 2012;2012;We report on the superior vortex pinning of single-and multilayer;Ba(Fe1-xCox)(2)As-2 thin films with self-assembled c-axis and;artificially introduced ab-plane pins. Ba(Fe1-xCox)(2)As-2 can accept a;very high density of pins (15-20 vol %) without T-c suppression. The;matching field is greater than 12 T, producing a significant enhancement;of the critical current density J(c), an almost isotropic J(c) (theta,;20 T) > 10(5) A/cm(2), and global pinning force density F-p of similar;to 50 GN/m(3). This scenario strongly differs from the high-temperature;superconducting cuprates where the addition of pins without Tc;suppression is limited to 2-4 vol %, leading to small H-Irr enhancements;and improved J(c) only below 3-5 T.;Lee, Sanghan/C-8876-2012; Eom, Chang-Beom/I-5567-2014;7;2;0;0;7;1098-0121;WOS:000312023100002;;;J;Xia, Junchao;Carter, Emily A.;Density-decomposed orbital-free density functional theory for covalently;bonded molecules and materials;PHYSICAL REVIEW B;86;23;235109;10.1103/PhysRevB.86.235109;DEC 7 2012;2012;We propose a density decomposition scheme using a Wang-Govind-Carter-;(WGC-) based kinetic energy density functional (KEDF) to accurately and;efficiently simulate various covalently bonded molecules and materials;within orbital-free (OF) density functional theory (DFT). By using a;local, density-dependent scale function, the total density is decomposed;into a highly localized density within covalent bond regions and a;flattened delocalized density, with the former described by semilocal;KEDFs and the latter treated by the WGC KEDF. The new model predicts;reasonable equilibrium volumes, bulk moduli, and phase-ordering energies;for various semiconductors compared to Kohn-Sham (KS) DFT benchmarks.;The decomposition formalism greatly improves numerical stability and;accuracy, while retaining computational speed compared to simply;applying the original WGC KEDF to covalent materials. The surface energy;of Si(100) and various diatomic molecule properties can be stably;calculated and also agree well with KSDFT benchmarks. This;linear-scaled, computationally efficient, density-partitioned,;multi-KEDF scheme opens the door to large-scale simulations of;molecules, semiconductors, and insulators with OFDFT.;7;0;0;0;7;1098-0121;WOS:000312024900001;;;J;Zhao, Yang;Gong, Shou-Shu;Wang, Yong-Jun;Su, Gang;Low-energy effective theory and two distinct critical phases in a;spin-1/2 frustrated three-leg spin tube;PHYSICAL REVIEW B;86;22;224406;10.1103/PhysRevB.86.224406;DEC 7 2012;2012;Motivated by the crystal structures of [(CuCl(2)tachH)(3)Cl]Cl-2 and;Ca3Co2O6, we develop a low-energy effective theory using the;bosonization technique for a spin-1/2 frustrated three-leg spin tube;with trigonal prism units in two limit cases. The features obtained with;the effective theory are numerically elucidated by the density matrix;renormalization group method. Three different quantum phases in the;ground state of the system, say, one gapped dimerized phase and two;distinct gapless phases, are identified, where the two gapless phases;are found to have the conformal central charge c = 1 and 3/2,;respectively. Spin gaps, spin and dimer correlation functions, and the;entanglement entropy are obtained. In particular, it is disclosed that;the critical phase with c = 3/2 is the consequence of spin frustrations,;which might belong to the SU(2)(k=2) Wess-Zumino-Witten-Novikov;universality class, and is induced by the twist term in the bosonized;Hamiltonian density.;Su, Gang/G-6092-2011;Su, Gang/0000-0002-8149-4342;1;1;0;0;1;1098-0121;WOS:000312024300003;;;J;Vucicevic, J.;Goerbig, M. O.;Milovanovic, M. V.;d-wave superconductivity on the honeycomb bilayer;PHYSICAL REVIEW B;86;21;214505;10.1103/PhysRevB.86.214505;DEC 7 2012;2012;We introduce a microscopic model on the honeycomb bilayer, which in the;small-momentum limit captures the usual (quadratic dispersion in the;kinetic term) description of bilayer graphene. In the limit of strong;interlayer hopping it reduces to an effective honeycomb monolayer model;with also third-neighbor hopping. We study interaction effects in this;effective model, focusing on possible superconducting instabilities. We;find d(x2-y2) superconductivity in the strong-coupling limit of an;effective tJ -model-like description that gradually transforms into d +;id time-reversal symmetry-breaking superconductivity at weak couplings.;In this limit the small-momentum order-parameter expansion is (k(x) +;ik(y) )(2) [or (k(x) + ik(y) )(2)] in both valleys of the effective;low-energy description. The relevance of our model and investigation for;the physics of bilayer graphene is also discussed.;5;0;0;0;5;1098-0121;WOS:000312023100004;;;J;Etzioni, Yoav;Horovitz, Baruch;Le Doussal, Pierre;Rings and Coulomb boxes in dissipative environments;PHYSICAL REVIEW B;86;23;235406;10.1103/PhysRevB.86.235406;DEC 6 2012;2012;We study a particle on a ring in the presence of a dissipative;Caldeira-Leggett environment and derive its response to a dc field. We;show how this non-equilibrium response is related to a flux averaged;equilibrium response. We find, through a two-loop renormalization group;analysis, that a large dissipation parameter eta flows to a fixed point;eta(R) = (h) over bar/(2 pi). We also reexamine the mapping of this;problem to that of the Coulomb box and show that the relaxation;resistance, of recent interest, is quantized for large eta. For finite;eta > eta(R) we find that a certain average of the relaxation resistance;is quantized. We propose a Coulomb-box experiment to measure a quantized;noise. DOI: 10.1103/PhysRevB.86.235406;1;0;0;0;1;1098-0121;WOS:000312024600004;;;J;Fontana, Yannik;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;Mapping the directional emission of quasi-two-dimensional photonic;crystals of semiconductor nanowires using Fourier microscopy;PHYSICAL REVIEW B;86;24;245303;10.1103/PhysRevB.86.245303;DEC 6 2012;2012;Controlling the dispersion and directionality of the emission of;nanosources is one of the major goals of nanophotonics research. This;control will allow the development of highly efficient nanosources even;at the single-photon level. One of the ways to achieve this goal is to;couple the emission to Bloch modes of periodic structures. Here, we;present the first measurements of the directional emission from nanowire;photonic crystals by using Fourier microscopy. With this technique, we;efficiently collect and resolve the directional emission of nanowires;within the numerical aperture of a microscope objective. The light;emission from a heterostructure grown in each nanowire is governed by;the photonic (Bloch) modes of the photonic crystal. We also demonstrate;that the directionality of the emission can be easily controlled by;infiltrating the photonic crystal with a high refractive index liquid.;This work opens new possibilities for the control of the emission of;sources in nanowires.;5;0;0;0;5;1098-0121;WOS:000312025300005;;;J;Fujimori, Shin-ichi;Ohkochi, Takuo;Okane, Tetsuo;Saitoh, Yuji;Fujimori, Atsushi;Yamagami, Hiroshi;Haga, Yoshinori;Yamamoto, Etsuji;Onuki, Yoshichika;Itinerant nature of U 5f states in uranium mononitride revealed by;angle-resolved photoelectron spectroscopy;PHYSICAL REVIEW B;86;23;235108;10.1103/PhysRevB.86.235108;DEC 6 2012;2012;The electronic structure of the antiferromagnet uranium nitride (UN) has;been studied by angle-resolved photoelectron spectroscopy (ARPES) using;soft x-rays (h nu = 420-520 eV). Strongly dispersive bands with large;contributions from the U 5f states were observed in ARPES spectra and;form Fermi surfaces. The band structure as well as the Fermi surfaces in;the paramagnetic phase are well explained by the band-structure;calculation treating all the U 5f electrons as being itinerant,;suggesting that an itinerant description of the U 5f states is;appropriate for this compound. On the other hand, changes in the;spectral function due to the antiferromagnetic transition were very;small. The shapes of the Fermi surfaces in a paramagnetic phase are;highly three-dimensional, and the nesting of Fermi surfaces is unlikely;as the origin of the magnetic ordering. DOI: 10.1103/PhysRevB.86.235108;2;0;0;0;2;1098-0121;WOS:000312024600002;;;J;Hosseini, Mir Vahid;Zareyan, Malek;Unconventional superconducting states of interlayer pairing in bilayer;and trilayer graphene;PHYSICAL REVIEW B;86;21;214503;10.1103/PhysRevB.86.214503;DEC 6 2012;2012;We develop a theory for interlayer pairing of chiral electrons in;graphene materials which results in an unconventional superconducting;state with an s-wave spin-triplet order parameter. In a pure bilayer;graphene, this superconductivity exhibits a gapless property with an;exotic effect of temperature-induced condensation causing an increase of;the pairing amplitude with increasing temperature. We find that a finite;doping opens a gap in the excitation spectrum and weakens this anomalous;temperature dependence. We further explore the possibility of realizing;a variety of pairing patterns with different topologies of the Fermi;surface, by tuning the difference in the doping of the two layers. In;trilayer graphene, the interlayer superconductivity is characterized by;a two-component order parameter which can be used to define two distinct;phases in which only one of the components is nonvanishing. For ABA;stacking the stable state is determined by a competition between these;two phases. On variation of the relative amplitude of the corresponding;coupling strength, a first-order phase transition can occur between;these two phases. For ABC stacking, we find that the two phases coexist;with the possibility of a similar phase transition, which turns out to;be second order. DOI: 10.1103/PhysRevB.86.214503;1;0;0;0;1;1098-0121;WOS:000312022700003;;;J;Kajihara, Y.;Inui, M.;Matsuda, K.;Nagao, T.;Ohara, K.;Density fluctuations at the continuous liquid-liquid phase transition in;chalcogen systems;PHYSICAL REVIEW B;86;21;214202;10.1103/PhysRevB.86.214202;DEC 6 2012;2012;We have carried out density and small-angle x-ray scattering;measurements on a typical liquid chalcogen (Te, Se) system to;investigate its continuous liquid-liquid phase transition. With;increasing temperature, the zero-wave-number structure factor S(0) shows;a maximum in the middle of the transition region where the density;exhibits negative thermal expansion. This is direct evidence of density;fluctuations induced by the liquid-liquid phase transition. When the;sample is pressurized to 100 MPa, the density and S(0) curves shift to;the lower temperature side, which is consistent with the shift of the;structural transition. We discuss the similarity between liquid Te and;liquid water from the viewpoint of fluctuations induced by the;liquid-liquid transition. DOI: 10.1103/PhysRevB.86.214202;1;0;0;0;1;1098-0121;WOS:000312022700001;;;J;Khuntia, P.;Strydom, A. M.;Wu, L. S.;Aronson, M. C.;Steglich, F.;Baenitz, M.;Field-tuned critical fluctuations in YFe2Al10: Evidence from;magnetization, Al-27 NMR, and NQR investigations;PHYSICAL REVIEW B;86;22;220401;10.1103/PhysRevB.86.220401;DEC 6 2012;2012;We report magnetization, specific heat, and NMR investigations on;YFe2Al10 over a wide range of temperature and magnetic field and zero;field (NQR) measurements. Magnetic susceptibility, specific heat, and;spin-lattice relaxation rate divided by T (1/T1T) follow a weak power;law (similar to T-0.4) temperature dependence, which is a signature of;the critical fluctuations of Fe moments. The value of the;Sommerfeld-Wilson ratio and the linear relation between 1/T1T and.;suggest the existence of ferromagnetic correlations in this system. No;magnetic ordering down to 50 mK in C-p(T)/T and the unusual T and H;scaling of the bulk and NMR data are associated with a magnetic;instability which drives the system to quantum criticality. The magnetic;properties of the system are tuned by field wherein ferromagnetic;fluctuations are suppressed and a crossover from quantum critical to;Fermi-liquid behavior is observed with increasing magnetic field.;Khuntia, Panchanan /E-4270-2010;5;1;0;0;5;1098-0121;WOS:000312023600001;;;J;Marsh, J.;Camley, R. E.;Two-wave mixing in nonlinear magnetization dynamics: A perturbation;expansion of the Landau-Lifshitz-Gilbert equation;PHYSICAL REVIEW B;86;22;224405;10.1103/PhysRevB.86.224405;DEC 6 2012;2012;Recent experiments have shown that two electromagnetic waves can be;mixed together by a nonlinear process in magnetic materials and can;produce a wide variety of output waves, each with a different frequency.;A perturbation expansion of the Landau-Lifschitz-Gilbert equation is;presented which provides qualitative and quantitative understanding of;this process. The results of this expansion are compared to both;experiment and direct numerical solutions.;1;0;0;0;1;1098-0121;WOS:000312023600004;;;J;Norris, Scott A.;Stress-induced patterns in ion-irradiated silicon: Model based on;anisotropic plastic flow;PHYSICAL REVIEW B;86;23;235405;10.1103/PhysRevB.86.235405;DEC 6 2012;2012;We present a model for the effect of stress on thin amorphous films that;develop atop ion-irradiated silicon, based on the mechanism of;ion-induced anisotropic plastic flow. Using only parameters directly;measured or known to high accuracy, the model exhibits remarkably good;agreement with the wavelengths of experimentally observed patterns and;agrees qualitatively with limited data on ripple propagation speed. The;predictions of the model are discussed in the context of other;mechanisms recently theorized to explain the wavelengths, including;extensive comparison with an alternate model of stress. DOI:;10.1103/PhysRevB.86.235405;14;0;0;0;14;1098-0121;WOS:000312024600003;;;J;Ostlin, A.;Chioncel, L.;Vitos, L.;One-particle spectral function and analytic continuation for many-body;implementation in the exact muffin-tin orbitals method;PHYSICAL REVIEW B;86;23;235107;10.1103/PhysRevB.86.235107;DEC 6 2012;2012;We investigate one of the most common analytic continuation techniques;in condensed matter physics, namely the Pade approximant. Aspects;concerning its implementation in the exact muffin-tin orbitals (EMTO);method are scrutinized with special regard towards making it stable and;free of artificial defects. The electronic structure calculations are;performed for solid hydrogen, and the performance of the analytical;continuation is assessed by monitoring the density of states constructed;directly and via the Pade approximation. We discuss the difference;between the k-integrated and k-resolved analytical continuations, as;well as describing the use of random numbers and pole residues to;analyze the approximant. It is found that the analytic properties of the;approximant can be controlled by appropriate modifications, making it a;robust and reliable tool for electronic structure calculations. At the;end, we propose a route to perform analytical continuation for the;EMTO+dynamical mean field theory method. DOI: 10.1103/PhysRevB.86.235107;0;0;0;0;0;1098-0121;WOS:000312024600001;;;J;Rauch, D.;Suellow, S.;Bleckmann, M.;Klemke, B.;Kiefer, K.;Kim, M. S.;Aronson, M. C.;Bauer, E.;Magnetic phase diagram of CePt3B1-xSix;PHYSICAL REVIEW B;86;24;245104;10.1103/PhysRevB.86.245104;DEC 6 2012;2012;We present a study of the main bulk properties (susceptibility,;magnetization, resistivity, and specific heat) of CePt3B1-xSix, an;alloying system that crystallizes in a noncentrosymmetric lattice, and;derive the magnetic phase diagram. The materials at the end point of the;alloying series have previously been studied, with CePt3B established as;a material with two different magnetic phases at low temperatures;(antiferromagnetic below T-N = 7.8 K, weakly ferromagnetic below T-C;approximate to 5 K), while CePt3Si is a heavy fermion superconductor;(T-c = 0.75 K) coexisting with antiferromagnetism (T-N = 2.2 K). From;our experiments we conclude that the magnetic phase diagram is divided;into two regions. In the region of low Si content (up to x similar to;0.7) the material properties resemble those of CePt3B. Upon increasing;the Si concentration further the magnetic ground state continuously;transforms into that of CePt3Si. In essence, we argue that CePt3B can be;understood as a low pressure variant of CePt3Si.;Kiefer, Klaus/J-3544-2013; Klemke, Bastian/J-4746-2013;Kiefer, Klaus/0000-0002-5178-0495; Klemke, Bastian/0000-0003-4560-6025;0;0;0;0;0;1098-0121;WOS:000312025300004;;;J;Schoenecker, Stephan;Richter, Manuel;Koepernik, Klaus;Eschrig, Helmut;Ferromagnetic elements by epitaxial growth: A density functional;prediction (vol 85, 024407, 2012);PHYSICAL REVIEW B;86;21;219901;10.1103/PhysRevB.86.219901;DEC 6 2012;2012;0;0;0;0;0;1098-0121;WOS:000312022700004;;;J;Sedlmeier, Katrin;Elsaesser, Sebastian;Neubauer, David;Beyer, Rebecca;Wu, Dan;Ivek, Tomislav;Tomic, Silvia;Schlueter, John A.;Dressel, Martin;Absence of charge order in the dimerized kappa-phase BEDT-TTF salts;PHYSICAL REVIEW B;86;24;245103;10.1103/PhysRevB.86.245103;DEC 6 2012;2012;Utilizing infrared vibrational spectroscopy we have investigated;dimerized two-dimensional organic salts in order to search for possible;charge redistribution that might constitute electronic dipoles and;ferroelectricity: the quantum spin liquid kappa-(BEDT-TTF)(2)Cu-2(CN)(3);[BEDT-TTF: bis-(ethylenedithio)tetrathiafulvalene], the;antiferromagnetic Mott insulator kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl, and;the superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br. None of them;exhibit any indication of charge disproportionation. Upon cooling to low;temperatures all BEDT-TTF molecules remain homogeneously charged within;+/- 0.005e. No modification in the charge distribution is observed;around T = 6 K where a low-temperature anomaly has been reported for the;spin-liquid material kappa-(BEDT-TTF)(2)Cu-2(CN)(3). In this compound;the in-plane optical response and vibrational coupling are rather;anisotropic, indicating that the tilt of the BEDT-TTF molecules in c;direction and their coupling to the anion layers has to be considered in;the explanation of the electromagnetic properties.;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;14;0;0;0;14;1098-0121;WOS:000312025300003;;;J;Siloi, I.;Troiani, F.;Towards the chemical tuning of entanglement in molecular nanomagnets;PHYSICAL REVIEW B;86;22;224404;10.1103/PhysRevB.86.224404;DEC 6 2012;2012;Antiferromagnetic spin rings represent prototypical realizations of;highly correlated, low-dimensional systems. Here we theoretically show;how the introduction of magnetic defects by controlled chemical;substitutions results in a strong spatial modulation of spin-pair;entanglement within each ring. Entanglement between local degrees of;freedom (individual spins) and collective ones (total ring spins) are;shown to coexist in exchange-coupled ring dimers, as can be deduced from;general symmetry arguments. We verify the persistence of these features;at finite temperatures, and discuss them in terms of experimentally;accessible observables.;Troiani, Filippo/B-4787-2011;5;0;0;0;5;1098-0121;WOS:000312023600003;;;J;Sreenivasulu, G.;Petrov, V. M.;Fetisov, L. Y.;Fetisov, Y. K.;Srinivasan, G.;Magnetoelectric interactions in layered composites of piezoelectric;quartz and magnetostrictive alloys;PHYSICAL REVIEW B;86;21;214405;10.1103/PhysRevB.86.214405;DEC 6 2012;2012;Mechanical strain mediated magnetoelectric effects are studied in;bilayers and trilayers of piezoelectric quartz and magnetostrictive;permendur (P), an alloy of Fe-Co-V. It is shown that the magnetoelectric;voltage coefficient (MEVC), proportional to the ratio of the;piezoelectric coupling coefficient to the permittivity, is higher in;quartz-based composites than for traditional ferroelectrics-based ME;composites. In bilayers of X-cut single crystal quartz and permendur,;the MEVC varies from 1.5 V/cm Oe at 20 Hz to similar to 185 V/cm Oe at;bending resonance or electromechanical resonance corresponding to;longitudinal acoustic modes. In symmetric X-cut quartz-P trilayers, the;MEVC similar to 4.8 V/cm Oe at 20 Hz and similar to 175 V/cm Oe at;longitudinal acoustic resonance. Trilayers of Y-cut quartz and permendur;show ME coupling under a shear strain with an MEVC that is an order of;magnitude smaller than for longitudinal strain in samples with X-cut;quartz. A model for low-frequency and resonance ME effects which allows;for explicit expressions of MEVC and resonance frequencies is provided;and calculated. MEVCs are in general agreement with measured values.;Magnetoelectric composites with quartz have the desired characteristics;such as the absence of ferroelectric hysteresis and pyroelectric losses;and could potentially replace ferroelectrics in composite-based magnetic;sensors, transducers, and high-frequency devices. DOI:;10.1103/PhysRevB.86.214405;Gollapudi, Sreenivasulu/G-9832-2012;Gollapudi, Sreenivasulu/0000-0002-6136-7119;8;0;0;0;8;1098-0121;WOS:000312022700002;;;J;Syzranov, S. V.;Yevtushenko, O. M.;Efetov, K. B.;Fermionic and bosonic ac conductivities at strong disorder;PHYSICAL REVIEW B;86;24;241102;10.1103/PhysRevB.86.241102;DEC 6 2012;2012;We study the ac conduction in a system of fermions or bosons strongly;localized in a disordered array of sites with short-range interactions;at frequencies larger than the intersite tunneling but smaller than the;characteristic fluctuation of the on-site energy. While the main;contribution sigma(0)(omega) to the conductivity comes from local;dipole-type excitations on close pairs of sites, coherent processes on;three or more sites lead to an interference correction sigma(1)(omega),;which depends on the statistics of the charge carriers and can be;suppressed by a magnetic field. For bosons the correction is always;positive, while for fermions it can be positive or negative depending on;whether the conduction is dominated by effective single-particle or;single-hole processes. We calculate the conductivity explicitly assuming;a constant density of states of single-site excitations. Independently;of the statistics, sigma(0)(omega) = const. For bosons, sigma(1)(omega);proportional to log(C/omega). For fermions, sigma(1)(omega) proportional;to log[max(A,omega)/omega] - log[max(B,omega)/omega], where the first;and the second term are, respectively, the particle and hole;contributions, A and B being the particle and hole energy cutoffs. The;ac magnetoresistance has the same sign as sigma(1)(omega).;Efetov, Konstantin/H-8852-2013;0;0;0;0;0;1098-0121;WOS:000312025300001;;;J;Troeppner, C.;Schmitt, T.;Reuschl, M.;Hammer, L.;Schneider, M. A.;Mittendorfer, F.;Redinger, J.;Podloucky, R.;Weinert, M.;Incommensurate Moire overlayer with strong local binding: CoO(111);bilayer on Ir(100);PHYSICAL REVIEW B;86;23;235407;10.1103/PhysRevB.86.235407;DEC 6 2012;2012;Incommensurate relaxed overlayer Moire structures are often interpreted;as systems with weak lateral variations of the binding potential and;thus no structural modulations in the overlayer material. We discuss;here the example of a CoO(111) bilayer on Ir(100), which is a relaxed;overlayer with strong structural response to the lateral modulation of;interface properties but nevertheless is incommensurate. By means of;density functional theory (DFT) calculations, we quantitatively;reproduce all the structural parameters of the CoO(111) bilayer on;Ir(100) as proposed by a recent low-energy electron diffraction analysis;[Ebensperger et al., Phys. Rev. B 81, 235405 (2010)]. The calculations;predict energetic degeneracies with respect to registry shifts of the;CoO(111) film along [01 (1) over bar]. Large-scale, low-temperature;scanning tunneling microscopy topographies reveal that the true;structure of the film is incommensurate in this direction, exhibiting a;one-dimensional Moire pattern with a period of about 9.4 a(Ir). From DFT;calculations for limiting (periodic) models, we can sample the potential;landscape of the cobalt and oxygen atoms in the Moire structure across;the Ir(100) unit cell. We find that despite the non-commensurability of;the film, the binding to the substrate is site specific with strong;attraction and repulsion points for both cobalt and oxygen atoms,;leading to severe local distortions in the film. The lateral modulation;of the structural elements within the oxide film can be understood as a;combination of the lateral variation in the Co-Ir binding potential and;additional O-Ir binding. DOI: 10.1103/PhysRevB.86.235407;Schneider, M. Alexander/C-6241-2013; Hammer, Lutz/D-9863-2013; Schneider, M. Alexander/B-4444-2012; Mittendorfer, Florian/L-5929-2013;Schneider, M. Alexander/0000-0002-8607-3301;;3;0;0;0;3;1098-0121;WOS:000312024600005;;;J;Tyunina, M.;Dejneka, A.;Chvostova, D.;Levoska, J.;Plekh, M.;Jastrabik, L.;Phase transitions in ferroelectric Pb0.5Sr0.5TiO3 films probed by;spectroscopic ellipsometry;PHYSICAL REVIEW B;86;22;224105;10.1103/PhysRevB.86.224105;DEC 6 2012;2012;Phase transitions occurring in 130-nm-thick films of;perovskite-structure ferroelectric Pb0.5Sr0.5TiO3 are experimentally;studied by combining spectroscopic ellipsometry and low-frequency;dielectric analysis. Polycrystalline and polydomain epitaxial films with;relaxed misfit strain and columnar microstructure are investigated. The;paraelectric and the ferroelectric states, and the temperatures and;widths of the paraelectric-to-ferroelectric phase transitions, are;identified from the temperature evolution of refractive index measured;in transparency range. The temperatures at which transitions start on;cooling are found to be considerably higher than the temperatures of the;dielectric peaks. In contrast to the broad dielectric peaks, the;transition width of 60 K in the polycrystalline film and that of 20 K in;the polydomain epitaxial film are revealed. The discrepancies between;optical and dielectric data are explained by the influence of extrinsic;factors on the low-frequency response of the thin-film capacitors. It is;suggested that fundamental mechanisms of ferroelectric phase transitions;in thin films can be revealed by studies of thermo-optical properties.;Dejneka, Alexandr/G-6384-2014; Jastrabik, Lubomir /H-1217-2014; Chvostova, Dagmar/G-9360-2014;6;0;0;0;6;1098-0121;WOS:000312023600002;;;J;Zeng, Hualing;Zhu, Bairen;Liu, Kai;Fan, Jiahe;Cui, Xiaodong;Zhang, Q. M.;Low-frequency Raman modes and electronic excitations in atomically thin;MoS2 films;PHYSICAL REVIEW B;86;24;241301;10.1103/PhysRevB.86.241301;DEC 6 2012;2012;Atomically thin MoS2 crystals have been recognized as;quasi-two-dimensional semiconductors with remarkable physical;properties. We report our Raman scattering measurements on multilayer;and monolayer MoS2, especially in the low-frequency range (<50 cm(-1)).;We find two low-frequency Raman modes with a contrasting thickness;dependence. When increasing the number of MoS2 layers, one mode shows a;significant increase in frequency while the other decreases following a;1/N (N denotes the number of unit layers) trend. With the aid of;first-principles calculations we assign the former as the shear mode;E-2g(2). The latter is distinguished as the compression vibrational;mode, similar to the surface vibration of other epitaxial thin films.;The opposite evolution of the two modes with thickness demonstrates;vibrational modes in an atomically thin crystal as well as a more;precise way to characterize the thickness of atomically thin MoS2 films.;In addition, we observe a broad feature around 38 cm(-1) (5 meV) which;is visible only under near-resonance excitation and pinned at a fixed;energy, independent of thickness. We interpret the feature as an;electronic Raman scattering associated with the spin-orbit coupling;induced splitting in a conduction band at K points in their Brillouin;zone.;Liu, Kai/K-4157-2012; Cui, Xiaodong/C-2023-2009; Zeng, Hualing/J-4411-2014;Cui, Xiaodong/0000-0002-2013-8336;;19;1;0;0;19;1098-0121;WOS:000312025300002;;;J;Anand, V. K.;Johnston, D. C.;Observation of a phase transition at 55 K in single-crystal CaCu1.7As2;PHYSICAL REVIEW B;86;21;214501;10.1103/PhysRevB.86.214501;DEC 5 2012;2012;We present the structural, magnetic, thermal and ab-plane electronic;transport properties of single crystals of CaCu1.7As2 grown by the;self-flux technique that were investigated by powder x-ray diffraction,;magnetic susceptibility chi, isothermal magnetization M, specific heat;C-p, and electrical resistivity rho measurements as a function of;temperature T and magnetic field H. X-ray diffraction analysis of;crushed crystals at room temperature confirm the collapsed tetragonal;ThCr2Si2-type structure with similar to 15% vacancies on the Cu sites as;previously reported, corresponding to the composition CaCu1.7As2. The;chi(T) data are diamagnetic, anisotropic, and nearly independent of T.;The chi is larger in the ab plane than along the c axis, as also;observed previously for SrCu2As2 and for pure and doped BaFe2As2. The;C-p(T) and rho(T) data indicate metallic sp-band character. In contrast;to the rho(T) and C-p(T) data that do not show any evidence for phase;transitions below 300 K, the rho(T) data exhibit a sharp decrease on;cooling below a temperature T-t = 54-56 K, depending on the crystal. The;chi(T) data show no hysteresis on warming and cooling through T-t and;the transition thus appears to be second order. The phase transition may;arise from spatial ordering of the vacancies on the Cu sublattice. The;T-t is found to be independent of H for H <= 8 T. A positive;magnetoresistance is observed below T-t that increases with decreasing T;and attains a value in H = 8.0 T of 8.7% at T = 1.8 K.;Anand, Vivek Kumar/J-3381-2013;Anand, Vivek Kumar/0000-0003-2023-7040;5;0;0;0;5;1098-0121;WOS:000311910400003;;;J;Avetisyan, Siranush;Pietilaeinen, Pekka;Chakraborty, Tapash;Strong enhancement of Rashba spin-orbit coupling with increasing;anisotropy in the Fock-Darwin states of a quantum dot (vol 85, 153301,;2012);PHYSICAL REVIEW B;86;23;239901;10.1103/PhysRevB.86.239901;DEC 5 2012;2012;1;0;0;0;1;1098-0121;WOS:000311911500005;;;J;Berman, Oleg L.;Kezerashvili, Roman Ya.;Ziegler, Klaus;Superfluidity and collective properties of excitonic polaritons in;gapped graphene in a microcavity;PHYSICAL REVIEW B;86;23;235404;10.1103/PhysRevB.86.235404;DEC 5 2012;2012;We predict the formation and superfluidity of polaritons in an optical;microcavity formed by excitons in gapped graphene embedded there and;microcavity photons. The Rabi splitting related to the creation of an;exciton in a graphene layer in the presence of the band gap is obtained.;It is demonstrated that the Rabi splitting decreases when the energy gap;increases, while the larger value of the dielectric constant of the;microcavity gives a smaller value for the Rabi splitting. The analysis;of collective excitations as well as the sound velocity is presented. We;show that the superfluid density n(s) and temperature of the;Kosterlitz-Thouless phase transition T-c are decreasing functions of the;energy gap.;2;0;0;0;2;1098-0121;WOS:000311911500004;;;J;Bernu, S.;Fertey, P.;Itie, J. -P.;Berger, H.;Foury-Leylekian, P.;Pouget, J. -P.;Vanishing of the metal-insulator Peierls transition in pressurized BaVS3;PHYSICAL REVIEW B;86;23;235105;10.1103/PhysRevB.86.235105;DEC 5 2012;2012;BaVS3 presents a metal-to-insulator (MI) transition at ambient pressure;due to the stabilization of a 2k(F) commensurate charge density wave;(CDW) Peierls ground state built on the dz(2) V orbitals. The MI;transition vanishes under pressure at a quantum critical point (QCP);where the electronic properties exhibit a non-Fermi liquid behavior. In;this paper, we determine the CDW phase diagram under pressure and show;that it combines both the vanishing of the second-order Peierls;transition and a commensurate-incommensurate first-order delocking;transition of the 2k(F) wave vector. We explain quantitatively the drop;of the MI critical temperature by the decrease of the electron-hole pair;lifetime of the CDW condensate due to an enhancement of the;hybridization between the dz(2) and e(t(2g)) levels of the V under;pressure.;0;0;0;0;0;1098-0121;WOS:000311911500001;;;J;Bobaru, S.;Gaudry, E.;de Weerd, M. -C.;Ledieu, J.;Fournee, V.;Competing allotropes of Bi deposited on the Al13Co4(100) alloy surface;PHYSICAL REVIEW B;86;21;214201;10.1103/PhysRevB.86.214201;DEC 5 2012;2012;The growth and stability of Bi thin films on the Al13Co4(100) surface;has been investigated from the submonolayer to high-coverage regime by;scanning tunneling microscopy (STM) and low-energy electron diffraction;(LEED) for temperatures ranging from 57 to 633 K. Initially, Bi;adsorption leads to the formation of a pseudomorphic monolayer, followed;by the growth of islands of different heights with increasing coverage.;The in-plane structure, island height, and island morphology indicate;that these islands adopt either a pseudocubic (110) or hexagonal (111);orientation normal to the surface. The (110)-oriented islands correspond;to bilayer stacking (either two or four monolayers in height) while the;(111)-oriented islands correspond to either three-or four-layer;stacking. The in-plane orientation of (110) islands with respect to the;substrate is random, while (111) islands adopt one of four possible;orientations. In addition, the (111) islands show a moire structure. The;fact that Bi islands grow with either (110) or (111) orientation;simultaneously on the same substrate relates to a subtle energy balance;between both orientations according to ab initio calculations, allowing;both structures to coexist. The island density dependence versus both;deposition temperature and flux, their most frequent structure type,;reshaping effects, and chemical reactivity of the different allotropes;are also discussed in this paper.;Gaudry, Emilie/G-9682-2011; Ledieu, Julian/F-1430-2010;2;0;0;0;2;1098-0121;WOS:000311910400002;;;J;Czarnik, Piotr;Cincio, Lukasz;Dziarmaga, Jacek;Projected entangled pair states at finite temperature: Imaginary time;evolution with ancillas;PHYSICAL REVIEW B;86;24;245101;10.1103/PhysRevB.86.245101;DEC 5 2012;2012;A projected entangled pair state (PEPS) with ancillas is evolved in;imaginary time. This tensor network represents a thermal state of a;two-dimensional (2D) lattice quantum system. A finite-temperature phase;diagram of the 2D quantum Ising model in a transverse field is obtained;as a benchmark application.;2;0;0;0;2;1098-0121;WOS:000311912300002;;;J;de Jong, Maarten;Olmsted, David L.;van de Walle, Axel;Asta, Mark;First-principles study of the structural and elastic properties of;rhenium-based transition-metal alloys;PHYSICAL REVIEW B;86;22;224101;10.1103/PhysRevB.86.224101;DEC 5 2012;2012;Structural, energetic, and elastic properties of hexagonal-close-packed;rhenium-based transition-metal alloys are computed by density-functional;theory. The practical interest in these materials stems from the;attractive combination of mechanical properties displayed by rhenium for;structural applications requiring the combination of high melting;temperature and low-temperature ductility. Single-crystal elastic;constants, atomic volumes, axial c/a ratios, and dilute heats of;solution for Re-X alloys are computed, considering all possible;transition-metal solute species X. Calculated elastic constants are used;to compute values of a commonly considered intrinsic-ductility parameter;K/G, where K is the bulk modulus and G denotes the Voigt average of the;shear modulus, as well as the anisotropies in the Young's modulus and;shear modulus. The calculated properties show clear trends as a function;of d-band filling, which can be rationalized through tight-binding;theory. The results indicate that solutes to the left of rhenium in the;periodic table show a tendency to increase the intrinsic ductility;parameter, a trend that correlates with an increase of the c/a ratio;towards the ideal value associated optimal close packing. The Young's;modulus shows a trend towards increasing isotropy with alloying of;solutes X to the left of Re, while the shear modulus shows the opposite;trend but with an overall weaker dependence on solute additions. DOI:;10.1103/PhysRevB.86.224101;van de Walle, Axel/L-5676-2013;van de Walle, Axel/0000-0002-3415-1494;0;0;0;0;0;1098-0121;WOS:000311910900001;;;J;Fingerhut, Benjamin P.;Richter, Marten;Luo, Jun-Wei;Zunger, Alex;Mukamel, Shaul;Dissecting biexciton wave functions of self-assembled quantum dots by;double-quantum-coherence optical spectroscopy;PHYSICAL REVIEW B;86;23;235303;10.1103/PhysRevB.86.235303;DEC 5 2012;2012;Biexcitons feature prominently in various scenarios for utilization of;quantum dots (QDs) for enhancing the efficiencies of solar cells, and;for the generation of entangled photon pairs in single QD sources.;Two-dimensional double quantum coherence (2D-DQC) nonlinear optical;spectra provide novel spectroscopic signatures of such states beyond;global intensity and lifetime characteristics which are available by;more conventional techniques. We report the simulation of a prototype;2D-DQC optical experiment of a self-assembled InAs/GaAs dot. The;simulations consider the QD in different charged states and are based on;a state-of-the-art atomistic many-body pseudopotential method for the;calculation of the electronic structure and transition dipole matrix;elements. Comparison of the spectra of negatively charged, neutral, and;positively charged QD reveals optical signatures of their electronic;excitations. This technique directly accesses the biexciton (XX);energies as well as the projections of their wave functions on the;single-exciton manifold. These signals also provide a unique tool for;probing the charged state of the QD and thus the occupation of the;quantum state. Signatures of Pauli blockade of the creation of certain;single and two excitons due to charges on the particles are observed.;For all quantum states of the QD, the spectra reveal a strong;multiconfiguration character of the biexciton wave functions. Peak;intensities can be explained by interference of the contributing;Liouville space pathways.;Zunger, Alex/A-6733-2013; LUO, JUNWEI/B-6545-2013; LUO, JUN-WEI/A-8491-2010; Richter, Marten/B-7790-2008;Richter, Marten/0000-0003-4160-1008;2;0;0;0;2;1098-0121;WOS:000311911500003;;;J;Haskins, Justin B.;Moriarty, John A.;Hood, Randolph Q.;Polymorphism and melt in high-pressure tantalum;PHYSICAL REVIEW B;86;22;224104;10.1103/PhysRevB.86.224104;DEC 5 2012;2012;Recent small-cell (<150 atom) quantum molecular dynamics (QMD);simulations for Ta based on density functional theory (DFT) have;predicted a hexagonal omega (hex-omega)phase more stable than the normal;bcc phase at high temperature (T) and pressure (P) above 70 GPa [;Burakovsky et al., Phys. Rev. Lett. 104, 255702 (2010)]. Here we examine;possible high-T, P polymorphism in Ta with complementary DFT-based model;generalized pseudopotential theory (MGPT) multi-ion interatomic;potentials, which allow accurate treatment of much larger system sizes;(up to similar to 80000 atoms). We focus on candidate bcc, A15, fcc,;hcp, and hex-omega phases for the high-T, P phase diagram to 420 GPa,;studying the mechanical and relative thermodynamic stability of these;phases for both small and large computational cells. Our MGPT potentials;fully capture the T = 0 DFT energetics of these phases, while MGPT-MD;simulations demonstrate that the higher-energy fcc, hcp, and hex-omega;structures are only mechanically stabilized at high temperature by;large, size-dependent, anharmonic vibrational effects, with the;stability of the hex-omega phase also being found to be a sensitive;function of its c/a ratio. Both two-phase and Z-method melting;techniques have been used in MGPT-MD simulations to determine relative;phase stability and its size dependence. In the large-cell limit, the;two-phase method yields accurate equilibrium melt curves for all five;phases, with bcc producing the highest melt temperatures at all;pressures and hence being the most stable phase of those considered. The;two-phase bcc melt curve is also in good agreement with dynamic;experimental data as well as with the MGPT melt curve calculated from;bcc and liquid free energies. In contrast, we find that the Z method;produces only an upper bound to the equilibrium melt curve in the;large-cell limit. For the bcc and hex-omega structures, however, this is;a close upper bound within 5% of the two-phase results, although for the;A15, fcc, and hcp structures, the Z-melt curves are 25%-35% higher in;temperature than the two-phase results. Nonetheless, the Z method has;allowed us to study melt size effects in detail. We find these effects;to be either small or modest for the cubic bcc, A15, and fcc structures,;but to have a large impact on the hexagonal hcp and hex-omega melt;curves, which are dramatically pushed above that of bcc for simulation;cells less than 150 atoms. The melt size effects are driven by and;closely correlated with similar size effects on the mechanical stability;and the vibrational anharmonicity. We further show that for the same;simulation cell sizes and choice of c/a ratio, the MGPT-MD bcc and;hex-omega melt curves are in good agreement with the QMD results, so the;QMD prediction is confirmed in the small-cell limit. But in the;large-cell limit, the MGPT-MD hex-omega melt curve is always lowered;below that of bcc for any choice of c/a, so bcc is the most stable;phase. We conclude that for the non-bcc Ta phases studied, one requires;simulation cells of at least 250-500 atoms to be free of size effects;impacting mechanical and thermodynamic phase stability. DOI:;10.1103/PhysRevB.86.224104;8;0;0;0;8;1098-0121;WOS:000311910900004;;;J;Iwazaki, Yoshiki;Suzuki, Toshimasa;Mizuno, Youichi;Tsuneyuki, Shinji;Doping-induced phase transitions in ferroelectric BaTiO3 from;first-principles calculations;PHYSICAL REVIEW B;86;21;214103;10.1103/PhysRevB.86.214103;DEC 5 2012;2012;Carrier-electron-induced phase transition from tetragonal to cubic;phases in BaTiO3 is studied using first-principles calculation. Our;results show that the disappearance of the ferroelectric phase is an;intrinsic effect resulting from carrier electron doping in BaTiO3. We;further clarify that the lattice disorder induced by donor dopants such;as oxygen vacancies and substitutionally doped Nb5+ at Ti4+ sites;accelerates the disappearance of the tetragonal phase in BaTiO3.;7;0;0;0;7;1098-0121;WOS:000311910400001;;;J;Koshelev, A. E.;Phase diagram of Josephson junction between s and s(+/-) superconductors;in the dirty limit;PHYSICAL REVIEW B;86;21;214502;10.1103/PhysRevB.86.214502;DEC 5 2012;2012;The s(+/-) state in which the order parameter has different signs in;different bands is a leading candidate for the superconducting state in;the iron-based superconductors. We investigate a Josephson junction;between s and s(+/-) superconductors within microscopic theory.;Frustration, caused by interaction of the s-wave gap parameter with the;opposite-sign gaps of the s(+/-) superconductor, leads to nontrivial;phase diagram. When the partial Josephson coupling energy between the;s-wave superconductor and one of the s(+/-) bands dominates, s-wave gap;parameter aligns with the order parameter in this band. In this case,;the partial Josephson energies have different signs corresponding to;signs of the gap parameters. In the case of strong frustration,;corresponding to almost complete compensation of the total Josephson;energy, a nontrivial time-reversal-symmetry breaking (TRSB) state;realizes. In this state, all gap parameters become essentially complex.;As a consequence, this state provides realization for so-called;phi-junction with finite phase difference in the ground state. The width;of the TRSB state region is determined by the second harmonic in;Josephson current, proportional to sin(2 phi f), which appears in the;second order with respect to the boundary transparency. Using the;microscopic theory, we establish a range of parameters where different;states are realized. Our analysis shows insufficiency of the simple;phenomenological approach for treatment of this problem.;Koshelev, Alexei/K-3971-2013;Koshelev, Alexei/0000-0002-1167-5906;3;0;0;0;3;1098-0121;WOS:000311910400004;;;J;Krueger, Peter;Koutiri, Issam;Bourgeois, Sylvie;First-principles study of hexagonal tungsten trioxide: Nature of lattice;distortions and effect of potassium doping;PHYSICAL REVIEW B;86;22;224102;10.1103/PhysRevB.86.224102;DEC 5 2012;2012;A density functional theory study is reported on pure and potassium;doped tungsten trioxide. The nature of lattice distortions in the;hexagonal phase is analyzed and a new symmetry group is proposed. The;structure and stability of cubic, monoclinic, and hexagonal phases is;studied as a function of potassium doping and an approximate phase;diagram is derived. KxWO3 undergoes a monoclinic to hexagonal phase;transition at x similar to 3%. DOI: 10.1103/PhysRevB.86.224102;1;0;0;0;1;1098-0121;WOS:000311910900002;;;J;Landsgesell, S.;Abou-Ras, D.;Alber, D.;Prokes, K.;Wolf, T.;Direct evidence of chemical and crystallographic phase separation in;K0.65Fe1.74Se2;PHYSICAL REVIEW B;86;22;224502;10.1103/PhysRevB.86.224502;DEC 5 2012;2012;In the present work, we report on a chemical phase separation in;crystalline superconducting K0.65Fe1.74Se2, investigated by means of;magnetization experiments, scanning electron microscopy, electron;backscatter diffraction, and energy-dispersive x-ray spectrometry. It is;shown that the crystal consists of platelets oriented in < 100 > with an;approximated volume fraction of about 30% in the surrounding < 001 >;oriented matrix. The platelets (the matrix) are depleted in K (Fe) and;enriched in Fe (K). Chemical phase separation is demonstrated by a;stable, antiferromagnetic K0.8Fe1.6Se2 matrix, and KxFe2-y Se-2;platelets inducing superconductivity. This time-driven, chemical phase;separation is therefore responsible for various coexistent magnetic and;electrical properties measured in KxFeySe2 samples. DOI:;10.1103/PhysRevB.86.224502;Landsgesell, Sven/B-1467-2013; Prokes, Karel/J-5438-2013;Landsgesell, Sven/0000-0002-2469-3548; Prokes, Karel/0000-0002-7034-1738;10;0;0;0;10;1098-0121;WOS:000311910900005;;;J;Liu, Wei;Carrasco, Javier;Santra, Biswajit;Michaelides, Angelos;Scheffler, Matthias;Tkatchenko, Alexandre;Benzene adsorbed on metals: Concerted effect of covalency and van der;Waals bonding;PHYSICAL REVIEW B;86;24;245405;10.1103/PhysRevB.86.245405;DEC 5 2012;2012;The adsorption of aromatic molecules on metal surfaces plays a key role;in condensed matter physics and functional materials. Depending on the;strength of the interaction between the molecule and the surface, the;binding is typically classified as either physisorption or;chemisorption. Van der Waals (vdW) interactions contribute significantly;to the binding in physisorbed systems, but the role of the vdW energy in;chemisorbed systems remains unclear. Here we study the interaction of;benzene with the (111) surface of transition metals, ranging from weak;adsorption (Ag and Au) to strong adsorption (Pt, Pd, Ir, and Rh). When;vdW interactions are accurately accounted for, the barrier to adsorption;predicted by standard density-functional theory (DFT) calculations;essentially vanishes, producing a metastable precursor state on Pt and;Ir surfaces. Notably, vdW forces contribute more to the binding of;covalently bonded benzene than they do when benzene is physisorbed.;Comparison to experimental data demonstrates that some of the recently;developed methods for including vdW interactions in DFT allow;quantitative treatment of both weakly and strongly adsorbed aromatic;molecules on metal surfaces, extending the already excellent performance;found for molecules in the gas phase.;Michaelides, Angelos/K-8727-2012; Santra, Biswajit/C-4818-2008; Tkatchenko, Alexandre/E-7148-2011;Santra, Biswajit/0000-0003-3609-2106; Tkatchenko,;Alexandre/0000-0002-1012-4854;52;2;0;0;52;1098-0121;WOS:000311912300005;;;J;Ou, Xin;Koegler, Reinhard;Zhou, Hong-Bo;Anwand, Wolfgang;Grenzer, Joerg;Huebner, Rene;Voelskow, Matthias;Butterling, Maik;Zhou, Shengqiang;Skorupa, Wolfgang;Release of helium from vacancy defects in yttria-stabilized zirconia;under irradiation;PHYSICAL REVIEW B;86;22;224103;10.1103/PhysRevB.86.224103;DEC 5 2012;2012;Fission gas retention or release has a critical impact on the function;of advanced nuclear materials. Helium trapping in, and release from,;radiation defects induced by neutrons and by a decay in YSZ;(yttria-stabilized zirconia) is experimentally simulated using;synchronized Zr+ and He+ dual ion beam irradiation. The measured damage;profiles consist of two peaks which agree well with the calculated;profiles of implantation induced excess point defects. This special;implantation related effect has to be carefully considered in the;evaluation of experimental investigations which simulate isotropic;irradiation effects such as a decay. First-principles calculations show;that helium is energetically favorable to be trapped by Zr vacancies in;YSZ. Implanted helium alone in YSZ is accumulated in undesirable helium;bubbles and results in local surface swelling and lift-off. However,;under dual beam irradiation helium is released from vacancy defects and;is out-diffused at room temperature. Helium is mobilized by a;vacancy-assisted trapping/detrapping mechanism induced by the;simultaneous Zr+ ion implantation. This behavior avoids the deleterious;helium bubble formation and contributes to the suitable application;characteristics of YSZ which result in its excellent radiation hardness.;DOI: 10.1103/PhysRevB.86.224103;Zhou, Shengqiang/C-1497-2009;Zhou, Shengqiang/0000-0002-4885-799X;3;0;2;0;3;1098-0121;WOS:000311910900003;;;J;Pauly, C.;Bihlmayer, G.;Liebmann, M.;Grob, M.;Georgi, A.;Subramaniam, D.;Scholz, M. R.;Sanchez-Barriga, J.;Varykhalov, A.;Bluegel, S.;Rader, O.;Morgenstern, M.;Probing two topological surface bands of Sb2Te3 by spin-polarized;photoemission spectroscopy;PHYSICAL REVIEW B;86;23;235106;10.1103/PhysRevB.86.235106;DEC 5 2012;2012;Using high-resolution spin-and angle-resolved photoemission;spectroscopy, we map the electronic structure and spin texture of the;surface states of the topological insulator Sb2Te3. In combination with;density functional calculations (DFT), we directly show that Sb2Te3;exhibits a partially occupied, single spin-Dirac cone around the Fermi;energy E-F, which is topologically protected. DFT obtains a spin;polarization of the occupied Dirac cone states of 80-90%, which is in;reasonable agreement with the experimental data after careful background;subtraction. Furthermore, we observe a strongly spin-orbit split surface;band at lower energy. This state is found at E - E-F similar or equal to;-0.8 eV at the (Gamma) over bar point, disperses upward, and disappears;at about E - E-F = -0.4 eV into two different bulk bands. Along the;(Gamma) over bar-(K) over bar direction, the band is located within a;spin-orbit gap. According to an argument given by Pendry and Gurman in;1975, such a gap must contain a surface state, if it is located away;from the high-symmetry points of the Brillouin zone. Thus, the novel;spin-split state is protected by symmetry, too.;Bihlmayer, Gustav/G-5279-2013; Rader, Oliver/H-8498-2013; Sanchez-Barriga, Jaime/I-3493-2013; Varykhalov, Andrei/I-3571-2013; Blugel, Stefan/J-8323-2013; Liebmann, Marcus/G-6254-2012; Morgenstern, Markus/K-7785-2013;Bihlmayer, Gustav/0000-0002-6615-1122; Rader,;Oliver/0000-0003-3639-0971; Sanchez-Barriga, Jaime/0000-0001-9947-6700;;Varykhalov, Andrei/0000-0002-7901-3562; Blugel,;Stefan/0000-0001-9987-4733; Liebmann, Marcus/0000-0003-4787-0129;;Morgenstern, Markus/0000-0002-3993-6880;15;0;0;0;15;1098-0121;WOS:000311911500002;;;J;Silveirinha, Mario G.;Engheta, Nader;Metamaterial-inspired model for electron waves in bulk semiconductors;PHYSICAL REVIEW B;86;24;245302;10.1103/PhysRevB.86.245302;DEC 5 2012;2012;Based on an analogy with electromagnetic metamaterials, we develop an;effective medium description for the propagation of electron matter;waves in bulk semiconductors with a zinc-blende structure. It is;formally demonstrated that even though departing from a different;starting point, our theory gives results for the energy stationary;states consistent with Bastard's envelope-function approximation in the;long-wavelength limit. Using the proposed approach, we discuss the time;evolution of a wave packet in a bulk semiconductor with a zero-gap and;linear energy-momentum dispersion.;4;0;0;0;4;1098-0121;WOS:000311912300004;;;J;Valla, T.;Ji, Huiwen;Schoop, L. M.;Weber, A. P.;Pan, Z. -H.;Sadowski, J. T.;Vescovo, E.;Fedorov, A. V.;Caruso, A. N.;Gibson, Q. D.;Muechler, L.;Felser, C.;Cava, R. J.;Topological semimetal in a Bi-Bi2Se3 infinitely adaptive superlattice;phase;PHYSICAL REVIEW B;86;24;241101;10.1103/PhysRevB.86.241101;DEC 5 2012;2012;We report spin-and angle-resolved photoemission studies of a topological;semimetal from the infinitely adaptive series between elemental Bi and;Bi2Se3. The compound, based on Bi4Se3, is a 1:1 natural superlattice of;alternating Bi-2 layers and Bi2Se3 layers; the inclusion of S allows the;growth of large crystals, with the formula Bi4Se2.6S0.4. The crystals;cleave along the interfaces between the Bi-2 and Bi2Se3 layers, with the;surfaces obtained having alternating Bi or Se termination. The resulting;terraces, observed by photoemission electron microscopy, create avenues;suitable for the study of one-dimensional topological physics. The;electronic structure, determined by spin-and angle-resolved;photoemission spectroscopy, shows the existence of a surface state that;forms a large, hexagonally shaped Fermi surface around the Gamma point;of the surface Brillouin zone, with the spin structure indicating that;this material is a topological semimetal.;Felser, Claudia/A-5779-2009; Schoop, Leslie/A-4627-2013; Muchler, Lukas/A-4628-2013; Ji, Huiwen/O-5145-2014;Schoop, Leslie/0000-0003-3459-4241;;15;2;0;0;15;1098-0121;WOS:000311912300001;;;J;Witczak-Krempa, William;Ghaemi, Pouyan;Senthil, T.;Kim, Yong Baek;Universal transport near a quantum critical Mott transition in two;dimensions;PHYSICAL REVIEW B;86;24;245102;10.1103/PhysRevB.86.245102;DEC 5 2012;2012;We discuss the universal-transport signatures near a zero-temperature;continuous Mott transition between a Fermi liquid and a quantum spin;liquid in two spatial dimensions. The correlation-driven transition;occurs at fixed filling and involves fractionalization of the electron:;upon entering the spin liquid, a Fermi surface of neutral spinons;coupled to an internal gauge field emerges. We present a controlled;calculation of the value of the zero-temperature universal resistivity;jump predicted to occur at the transition. More generally, the behavior;of the universal scaling function that collapses the temperature-and;pressure-dependent resistivity is derived, and is shown to bear a strong;imprint of the emergent gauge fluctuations. We further predict a;universal jump of the thermal conductivity across the Mott transition,;which derives from the breaking of conformal invariance by the damped;gauge field, and leads to a violation of the Wiedemann-Franz law in the;quantum critical region. A connection to the quasitriangular organic;salts is made, where such a transition might occur. Finally, we present;some transport results for the pure rotor O(N) conformal field theory.;10;0;0;0;10;1098-0121;WOS:000311912300003;;;J;Apostolov, Stanislav;Levchenko, Alex;Josephson current and density of states in proximity circuits with;s(+)-superconductors;PHYSICAL REVIEW B;86;22;224501;10.1103/PhysRevB.86.224501;DEC 4 2012;2012;We study the emergent proximity effect in mesoscopic circuits that;involve a conventional superconductor and an unconventional pnictide;superconductor separated by a diffusive normal or ferromagnetic wire.;The focus is placed on revealing signatures of the proposed s(+)-state;of pnictides from the proximity-induced density of states and Josephson;current. We find analytically a universal result for the density of;states that exhibits both the Thouless gap at low energies and peculiar;features near the superconducting gap edges at higher energies. The;latter may be used to discriminate between s(+)- and s(++) symmetry;scenarios in scanning tunneling spectroscopy experiments. We also;calculate Josephson current-phase relationships for different junction;configurations, which are found to display robust 0-pi transitions for a;wide range of parameters.;3;0;0;0;3;1098-0121;WOS:000311910600005;;;J;Balci, Sinan;Kocabas, Coskun;Ates, Simge;Karademir, Ertugrul;Salihoglu, Omer;Aydinli, Atilla;Tuning surface plasmon-exciton coupling via thickness dependent plasmon;damping;PHYSICAL REVIEW B;86;23;235402;10.1103/PhysRevB.86.235402;DEC 4 2012;2012;In this paper, we report experimental and theoretical investigations on;tuning of the surface plasmon-exciton coupling by controlling the;plasmonic mode damping, which is defined by the plasmonic layer;thickness. The results reveal the formation of plasmon-exciton hybrid;state characterized by a tunable Rabi splitting with energies ranging;from 0 to 150 meV. Polarization-dependent spectroscopic reflection;measurements were employed to probe the dispersion of the coupled;system. The transfer matrix method and analytical calculations were used;to model the self-assembled J-aggregate/metal multilayer structures in;excellent agreement with experimental observations.;Kocabas, Coskun/C-6018-2013;6;0;0;0;6;1098-0121;WOS:000311911100002;;;J;Belashchenko, K. D.;Glasbrenner, J. K.;Wysocki, A. L.;Spin injection from a half-metal at finite temperatures;PHYSICAL REVIEW B;86;22;224402;10.1103/PhysRevB.86.224402;DEC 4 2012;2012;Spin injection from a half-metallic electrode in the presence of thermal;spin disorder is analyzed using a combination of random matrix theory,;spin-diffusion theory, and explicit simulations for the tight-binding;s-d model. It is shown that efficient spin injection from a half-metal;is possible as long as the effective resistance of the normal metal does;not exceed a characteristic value, which does not depend on the;resistance of the half-metallic electrode but, rather, is controlled by;spin-flip scattering at the interface. This condition can be formulated;as alpha less than or similar to l/l(sf)(N) T-c(-1) where a is the;relative deviation of the magnetization from saturation, l and l(sf)(N);are the mean-free path and the spin-diffusion length in the nonmagnetic;channel, and T-c is the transparency of the tunnel barrier at the;interface (if present). The general conclusions are confirmed by;tight-binding s-d model calculations. A rough estimate suggests that;efficient spin injection from true half-metallic ferromagnets into;silicon or copper may be possible at room temperature across a;transparent interface.;Wysocki, Aleksander/D-6928-2013;1;0;0;0;1;1098-0121;WOS:000311910600003;;;J;Bessas, D.;Sergueev, I.;Wille, H. -C.;Persson, J.;Ebling, D.;Hermann, R. P.;Lattice dynamics in Bi2Te3 and Sb2Te3: Te and Sb density of phonon;states;PHYSICAL REVIEW B;86;22;224301;10.1103/PhysRevB.86.224301;DEC 4 2012;2012;The lattice dynamics in Bi2Te3 and Sb2Te3 were investigated both;microscopically and macroscopically using Sb-121 and Te-125 nuclear;inelastic scattering, x-ray diffraction, and heat capacity measurements.;In combination with earlier inelastic neutron scattering data, the;element-specific density of phonon states was obtained for both;compounds and phonon polarization analysis was carried out for Bi2Te3. A;prominent peak in the Te specific density of phonon states at 13 meV,;that involves mainly in-plane vibrations, is mostly unaffected upon;substitution of Sb with Bi revealing vibrations with essentially Te;character. A significant softening is observed for the density of;vibrational states of Bi with respect to Sb, consistently with the mass;homology relation in the long-wavelength limit. In order to explain the;energy mismatch in the optical phonon region, a similar to 20% force;constant softening of the Sb-Te bond with respect to the Bi-Te bond is;required. The reduced average speed of sound at 20 K in Bi2Te3, 1.75(1);km/s, compared to Sb2Te3, 1.85(4) km/s, is not only related to the;larger mass density but also to a larger Debye level. The observed low;lattice thermal conductivity at 295 K, 2.4 Wm(-1)K(-1) for Sb2Te3 and;1.6 Wm(-1)K(-1) for Bi2Te3, cannot be explained by anharmonicity alone;given the rather modest Gruneisen parameters, 1.7(1) for Sb2Te3 and;1.5(1) for Bi2Te3, without accounting for the reduced speed of sound and;more importantly the low acoustic cutoff energy.;Wille, Hans-Christian/C-3881-2013; Hermann, Raphael/F-6257-2013; Bessas, Dimitrios/I-5262-2013;Hermann, Raphael/0000-0002-6138-5624; Bessas,;Dimitrios/0000-0003-0240-2540;5;0;1;0;5;1098-0121;WOS:000311910600002;;;J;de Resseguier, T.;Lescoute, E.;Loison, D.;Influence of elevated temperature on the wave propagation and spallation;in laser shock-loaded iron;PHYSICAL REVIEW B;86;21;214102;10.1103/PhysRevB.86.214102;DEC 4 2012;2012;Laser shock experiments have been performed on preheated iron samples to;address the role of initial temperature on the elastic limit, wave;propagation, and spall fracture in this metal over the temperature range;300-1000 K at very high expansion rates of the order of 3 x 10(6) s(-1).;Time-resolved measurements of the free-surface velocity indicate a;slight, roughly linear decrease of the spall strength with increasing;temperature, accompanied by a clear change from brittle to ductile;fracture behavior evidenced from post-shot examination of the recovered;samples. The results are discussed on the basis of simulations;accounting for laser-matter interaction, pressure wave propagation, and;subsequent polymorphic transformations throughout the sample thickness.;Over the explored range of loading conditions, the occurrence of such;transformations prior to spallation, which takes place near the;free-surface under tensile loading after reversion to the alpha phase,;does not seem to strongly affect dynamic fracture.;loison, didier/N-2122-2014;3;0;0;0;3;1098-0121;WOS:000311910100001;;;J;Ellis, David S.;Uchiyama, Hiroshi;Tsutsui, Satoshi;Sugimoto, Kunihisa;Kato, Kenichi;Ishikawa, Daisuke;Baron, Alfred Q. R.;Phonon softening and dispersion in EuTiO3;PHYSICAL REVIEW B;86;22;220301;10.1103/PhysRevB.86.220301;DEC 4 2012;2012;We measured phonon dispersion in single-crystal EuTiO3 using inelastic;x-ray scattering. Astructural transition to an antiferrodistortive phase;was found at a critical temperature T-0 = 287 +/- 1K using powder and;single-crystal x-ray diffraction. Clear softening of the zone boundary;R-point q = (0.5 0.5 0.5) acoustic phonon shows this to be a displacive;transition. The mode energy plotted against reduced temperature could be;seen to nearly overlap that of SrTiO3, suggesting a universal scaling;relation. Phonon dispersion was measured along Gamma-X (0 0 0) -> (0.5 0;0). Mode eigenvectors were obtained from a shell model consistent with;the q dependence of intensity and energy, which also showed that the;dispersion is nominally the same as in SrTiO3 at room temperature, but;corrected for mass. The lowest-energy optical mode, determined to be of;Slater character, softens approximately linearly with temperature until;the 70-100 K range where the softening stops, and at low temperature,;the mode disperses linearly near the zone center.;7;0;0;0;7;1098-0121;WOS:000311910600001;;;J;Fock, J.;Leijnse, M.;Jennum, K.;Zyazin, A. S.;Paaske, J.;Hedegard, P.;Nielsen, M. Brondsted;van der Zant, H. S. J.;Manipulation of organic polyradicals in a single-molecule transistor;PHYSICAL REVIEW B;86;23;235403;10.1103/PhysRevB.86.235403;DEC 4 2012;2012;Inspired by cotunneling spectroscopy of spin-states in a single;OPE5-based molecule, we investigate the prospects for electric control;of magnetism in purely organic molecules contacted in a three-terminal;geometry. Using the gate electrode, the molecule is reversibly switched;between three different redox states, with magnetic spectra revealing;both ferromagnetic and antiferromagnetic exchange couplings on the;molecule. These observations are shown to be captured by an effective;low-energy Heisenberg model, which we substantiate microscopically by a;simple valence bond description of the molecule. These preliminary;findings suggest an interesting route towards functionalized all-organic;molecular magnetism.;Fock, Jeppe/A-9074-2011;Fock, Jeppe/0000-0002-7515-4026;3;0;0;0;3;1098-0121;WOS:000311911100003;;;J;Li, P. H. Y.;Bishop, R. F.;Campbell, C. E.;Farnell, D. J. J.;Goetze, O.;Richter, J.;Spin-1/2 Heisenberg antiferromagnet on an anisotropic kagome lattice;PHYSICAL REVIEW B;86;21;214403;10.1103/PhysRevB.86.214403;DEC 4 2012;2012;We use the coupled-cluster method to study the zero-temperature;properties of an extended two-dimensional Heisenberg antiferromagnet;formed from spin-1/2 moments on an infinite spatially anisotropic kagome;lattice of corner-sharing isosceles triangles, with nearest-neighbor;bonds only. The bonds have exchange constants J(1) > 0 along two of the;three lattice directions and J(2) = kappa J(1) > 0 along the third. In;the classical limit, the ground-state (GS) phase for kappa < 1/2 has;collinear ferrimagnetic (Neel') order where the J(2)-coupled chain spins;are ferromagnetically ordered in one direction with the remaining spins;aligned in the opposite direction, while for kappa > 1/2 there exists an;infinite GS family of canted ferrimagnetic spin states, which are;energetically degenerate. For the spin-1/2 case, we find that quantum;analogs of both these classical states continue to exist as stable GS;phases in some regions of the anisotropy parameter kappa, namely, for 0;< kappa < kappa(c1) for the Neel' state and for (at least part of) the;region kappa > kappa(c2) for the canted phase. However, they are now;separated by a paramagnetic phase without either sort of magnetic order;in the region kappa(c1) < kappa < kappa(c2), which includes the;isotropic kagome point kappa = 1 where the stable GS phase is now;believed to be a topological (Z(2)) spin liquid. Our best numerical;estimates are kappa(c1) = 0.515 +/- 0.015 and kappa(c2) = 1.82 +/- 0.03.;Richter, Johannes/A-6339-2009; Bishop, Raymond/D-9715-2012;Bishop, Raymond/0000-0001-5565-0658;4;0;0;0;4;1098-0121;WOS:000311910100002;;;J;Monozon, B. S.;Schmelcher, P.;Bound and resonant impurity states in a narrow gapped armchair graphene;nanoribbon;PHYSICAL REVIEW B;86;24;245404;10.1103/PhysRevB.86.245404;DEC 4 2012;2012;An analytical study of discrete and resonant impurity quasi-Coulomb;states in a narrow gapped armchair graphene nanoribbon (GNR) is;performed. We employ the adiabatic approximation assuming that the;motions parallel ("slow") and perpendicular ("fast") to the boundaries;of the ribbon are separated adiabatically. The energy spectrum comprises;a sequence of series of quasi-Rydberg levels relevant to the slow motion;adjacent from the low energies to the size-quantized levels associated;with the fast motion. Only the series attributed to the ground;size-quantized subband is really discrete, while others corresponding to;the excited subbands consist of quasidiscrete (Fano resonant) levels of;nonzero energetic widths, caused by the coupling with the states of the;continuous spectrum branching from the low lying subbands. In the;two-and three-subband approximation the spectrum of the complex energies;of the impurity electron is derived in an explicit form. Narrowing the;GNR leads to an increase of the binding energy and the resonant width;both induced by the finite width of the ribbon. Displacing the impurity;center from the midpoint of the GNR causes the binding energy to;decrease, while the resonant width of the first excited Rydberg series;increases. As for the second excited series, their widths become;narrower with the shift of the impurity. A successful comparison of our;analytical results with those obtained by other theoretical and;experimental methods is presented. Estimates of the binding energies and;the resonant widths taken for the parameters of typical GNRs show that;not only the strictly discrete but also some resonant states are quite;stable and could be studied experimentally in doped GNRs.;Monozon, Boris/E-6412-2012; Schmelcher, Peter/D-9592-2014;Schmelcher, Peter/0000-0002-2637-0937;0;0;0;0;0;1098-0121;WOS:000311911900002;;;J;Thiaville, Andre;Vukadinovic, Nicolas;Acher, Olivier;Sum rule for the magnetic permeability of arbitrary textures;PHYSICAL REVIEW B;86;21;214404;10.1103/PhysRevB.86.214404;DEC 4 2012;2012;The f-sum rule for the magnetic permeability, derived previously for an;assembly of isolated macrospins, is generalized for an arbitrary;nonuniform three-dimensional magnetization texture, in which the;magnetizations at different points are coupled by exchange and;magnetostatic interactions. The sum value depends only on the magnetic;texture at rest. It has no direct contribution from the exchange energy,;but depends on the anisotropy, applied field, and demagnetizing;energies. The derived formula is tested against numerical calculations;for several complex and very different magnetization structures. This;generalized sum rule should be useful for experiments, numerical;simulations, and metrology.;1;0;0;0;1;1098-0121;WOS:000311910100003;;;J;Troc, R.;Gajek, Z.;Pikul, A.;Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as;seen in magnetic, transport, and specific-heat data;PHYSICAL REVIEW B;86;22;224403;10.1103/PhysRevB.86.224403;DEC 4 2012;2012;Single-crystalline UGe2 was investigated by means of magnetic;susceptibility, magnetization, electrical resistivity,;magnetoresistivity, and specific-heat measurements, all carried out in;wide temperature and magnetic-field ranges. An analysis of the obtained;data points out the dual behavior of the 5f electrons in this compound,;i. e., possessing simultaneously local and itinerant characters in two;substates. The magnetic and thermal characteristics of the compound were;modeled using the effective crystal field (CF) in the intermediate;coupling scheme and initial parameters obtained in the angular overlap;model. Various configurations of the localized 5f(n) (n = 1, 2, and 3);electrons on the uranium ion have been probed. The best results were;obtained for the 5f(2) (U4+) configuration. The CF parameters obtained;in the paramagnetic region allowed us to reproduce satisfactorily the;experimental findings in the whole temperature range including also the;magnitude of the ordered magnetic moment of uranium at low temperature.;The electrical resistivity data after subtraction of the phonon;contribution reveal the presence of a Kondo-like interaction in UGe2;supporting the idea of partial localization of the 5f electrons in UGe2.;On the other hand, magnetoresistivity and an excess of specific heat;originated from the hybridized (itinerant) part of 5f states, apparent;around the characteristic temperature T*, give a distinct signature for;the presence of the coupled charge-density wave and spin-density wave;fluctuations over all the ferromagnetic region with a maximum at T*,;postulated earlier in the literature.;7;0;0;0;7;1098-0121;WOS:000311910600004;;;J;Williams, T. J.;Yamani, Z.;Butch, N. P.;Luke, G. M.;Maple, M. B.;Buyers, W. J. L.;Neutron scattering study of URu2-xRexSi2 (x=0.10): Driving order towards;quantum criticality;PHYSICAL REVIEW B;86;23;235104;10.1103/PhysRevB.86.235104;DEC 4 2012;2012;We report inelastic neutron scattering measurements in the hidden order;state of URu2-xRexSi2 with x = 0.10. We observe that towards the;ferromagnetic quantum critical point induced by the negative chemical;pressure of Re doping, the gapped incommensurate fluctuations are robust;and comparable in intensity to the parent material. As the Re doping;moves the system toward the quantum critical point, the commensurate;spin fluctuations related to hidden order weaken, display a shortened;lifetime, and slow down. Halfway to the quantum critical point, the;hidden order phase survives, albeit weakened, in contrast to its;destruction by hydrostatic pressure and by positive chemical pressure;from Rh doping.;yamani, zahra/B-7892-2012; Luke, Graeme/A-9094-2010;0;0;0;0;0;1098-0121;WOS:000311911100001;;;J;Wolfowicz, Gary;Simmons, Stephanie;Tyryshkin, Alexei M.;George, Richard E.;Riemann, Helge;Abrosimov, Nikolai V.;Becker, Peter;Pohl, Hans-Joachim;Lyon, Stephen A.;Thewalt, Mike L. W.;Morton, John J. L.;Decoherence mechanisms of Bi-209 donor electron spins in isotopically;pure Si-28;PHYSICAL REVIEW B;86;24;245301;10.1103/PhysRevB.86.245301;DEC 4 2012;2012;Bismuth (Bi-209) is the deepest group V donor in silicon and possesses;the most extreme characteristics such as a 9/2 nuclear spin and a 1.5;GHz hyperfine coupling. These lead to several potential advantages for a;Si:Bi donor electron spin qubit compared to the more common phosphorus;donor. Most previous studies on Si: Bi have been performed using natural;silicon where linewidths and electron spin coherence times are limited;by the presence of Si-29 impurities. Here, we describe electron spin;resonance (ESR) and electron nuclear double resonance (ENDOR) studies on;Bi-209 in isotopically pure Si-28. ESR and ENDOR linewidths, transition;probabilities, and coherence times are understood in terms of the spin;Hamiltonian parameters showing a dependence on field and m(I) of the;Bi-209 nuclear spin. We explore various decoherence mechanisms;applicable to the donor electron spin, measuring coherence times up to;700 ms at 1.7 K at X band, comparable with Si-28:P. Importantly, the;coherence times we measure follow closely to the calculated field;gradients of the transition frequencies (df/dB), providing a strong;motivation to explore "clock" transitions where coherence lifetimes;could be further enhanced.;Morton, John/I-3515-2013;6;1;0;0;6;1098-0121;WOS:000311911900001;;;J;Armbruster, Oskar;Lungenschmied, Christoph;Bauer, Siegfried;Investigation of trap states and mobility in organic semiconductor;devices by dielectric spectroscopy: Oxygen-doped P3HT:PCBM solar cells;PHYSICAL REVIEW B;86;23;235201;10.1103/PhysRevB.86.235201;DEC 3 2012;2012;We investigate the dielectric response of solar cell devices based on;oxygen-doped poly(3-hexylthiophene):[6,6]-phenyl-C-61-butyric acid;methyl ester (P3HT:PCBM) blends as a function of temperature between 133;K and 303 K. The spectra are analyzed using a recently introduced model;[O. Armbruster, C. Lungenschmied, and S. Bauer, Phys. Rev. B 84, 085208;(2011)] which is based on a trapping and reemission mechanism of charge;carriers. A dominating trap depth of 130 meV is determined and the;broadening of this trap level identified as purely thermal. In addition;we estimate the density of charge carriers after doping as well as their;mobility. We show that the concentration of mobile holes approximately;doubles by heating the device from the lowest to the highest measured;temperature. This is indicative of a second, shallow trap level of;approximately 14 meV. Dielectric spectroscopy hence proves to be a;valuable tool to assess device parameters such as dopant concentration,;charge carrier transport characteristics, and mobility which are of;crucial interest for understanding degradation in organic semiconductor;devices.;Bauer, Siegfried/A-2354-2009; Armbruster, Oskar/G-1154-2014;Armbruster, Oskar/0000-0002-4235-4451;3;0;0;0;3;1098-0121;WOS:000311806300004;;;J;Chen, Bo;Abbey, Brian;Dilanian, Ruben;Balaur, Eugeniu;van Riessen, Grant;Junker, Mark;Tran, Chanh Q.;Jones, Michael W. M.;Peele, Andrew G.;McNulty, Ian;Vine, David J.;Putkunz, Corey T.;Quiney, Harry M.;Nugent, Keith A.;Diffraction imaging: The limits of partial coherence;PHYSICAL REVIEW B;86;23;235401;10.1103/PhysRevB.86.235401;DEC 3 2012;2012;Coherent diffraction imaging (CDI) typically requires that the source;should be highly coherent both laterally and longitudinally. In this;paper, we demonstrate that lateral and longitudinal partial coherence;can be successfully included in a CDI reconstruction algorithm;simultaneously using experimental x-ray data. We study the interplay;between lateral partial coherence and longitudinal partial coherence and;their relative influence on CDI. We compare our results against the;coherence criteria published by Spence et al. [Spence et al.,;Ultramicroscopy 101, 149 (2004)] and show that for iterative ab initio;phase-recovery algorithms based on those typically used in CDI and in;cases where the coherence properties are known, we are able to relax the;minimal coherence requirements by a factor of 2 both laterally and;longitudinally, potentially yielding significant reduction in exposure;time.;Jones, Michael/M-6895-2013; Abbey, Brian/D-3274-2011;Jones, Michael/0000-0002-0720-8715;;5;1;0;0;5;1098-0121;WOS:000311806300008;;;J;Gawarecki, Krzysztof;Lueker, Sebastian;Reiter, Doris E.;Kuhn, Tilmann;Glaessl, Martin;Axt, Vollrath Martin;Grodecka-Grad, Anna;Machnikowski, Pawel;Dephasing in the adiabatic rapid passage in quantum dots: Role of;phonon-assisted biexciton generation;PHYSICAL REVIEW B;86;23;235301;10.1103/PhysRevB.86.235301;DEC 3 2012;2012;We study the evolution of an exciton confined in a quantum dot;adiabatically controlled by a frequency-swept (chirped) laser pulse in;the presence of carrier-phonon coupling. We focus on the dynamics;induced by a linearly polarized beam and analyze the decoherence due to;phonon-assisted biexciton generation. We show that if the biexciton;state is shifted down by a few meV, as is typically the case, then the;resulting decoherence is strong even at low temperatures. As a result,;efficient state preparation is restricted to a small parameter area;corresponding to low temperatures, positive chirps, and moderate pulse;areas.;Kuhn, Tilmann/C-1190-2008;6;0;0;0;6;1098-0121;WOS:000311806300006;;;J;Hellstrom, Matti;Spangberg, Daniel;Hermansson, Kersti;Broqvist, Peter;Cu dimer formation mechanism on the ZnO(10(1)over-bar0) surface;PHYSICAL REVIEW B;86;23;235302;10.1103/PhysRevB.86.235302;DEC 3 2012;2012;The formation of Cu dimers on the ZnO(10 (1) over bar0) surface has been;studied using hybrid density functional theory. Depending on the;adsorption site, Cu atoms are found to adsorb with either oxidation;state 0 or +1. In the latter case, the Cu atom has donated an electron;to the ZnO conduction band. The two modes of adsorption display similar;stability at low coverages, while at higher coverages the neutral;species is more stable. Single Cu atoms diffuse across the ZnO(10 (1);over bar0) surface with small barriers of migration (0.3-0.4 eV) along;ZnO[1 (2) over bar 10], repeatedly switching their oxidation states,;while the barrier along ZnO[0001] is significantly higher (>1.5 eV). The;formation of a Cu dimer from two adsorbed Cu atoms is energetically;favorable with two competing structures of similar stability, both being;charge neutral. The minimum energy paths for Cu atom diffusion and dimer;formation are characterized by at least one of the two Cu atoms being in;oxidation state 0.;5;0;0;0;5;1098-0121;WOS:000311806300007;;;J;Huang, Yu-Kun;Chen, Pochung;Kao, Ying-Jer;Accurate computation of low-temperature thermodynamics for quantum spin;chains;PHYSICAL REVIEW B;86;23;235102;10.1103/PhysRevB.86.235102;DEC 3 2012;2012;We apply the biorthonormal transfer-matrix renormalization group (BTMRG);[Huang, Phys. Rev. E 83, 036702 (2011)] to study low-temperature;properties of quantum spin chains. Simulations on anisotropic Heisenberg;spin-1/2 chains demonstrate that the BTMRG outperforms the conventional;transfer-matrix renormalization group by successfully accessing far;lower temperature than previously reported, while retaining the same;level of accuracy. The power of the method is further illustrated by the;calculation of the low-temperature specific heat for a frustrated spin;chain.;Kao, Ying Jer/B-5297-2009; Chen, Pochung/G-1241-2010;Kao, Ying Jer/0000-0002-3329-6018;;4;0;0;0;4;1098-0121;WOS:000311806300002;;;J;Kim, Jin Hee;Rhyee, Jong-Soo;Kwon, Yong Seung;Magnon gap formation and charge density wave effect on thermoelectric;properties in the SmNiC2 compound;PHYSICAL REVIEW B;86;23;235101;10.1103/PhysRevB.86.235101;DEC 3 2012;2012;We studied the electrical, thermal, and thermoelectric properties of the;polycrystalline compound of SmNiC2. The electrical resistivity and;magnetization measurement show the interplay between the charge density;wave at T-CDW = 150 K and the ferromagnetic ordering of T-c = 18 K.;Below the ferromagnetic transition temperature, we observed the magnon;gap formation of Delta similar or equal to 4.3- 4.4 meV by rho(T) and;C-p (T) measurements. The charge density wave is attributed to the;increase of the Seebeck coefficient resulting in the increase of the;power factor S-2 sigma. The thermal conductivity anomalously increases;with increasing temperature along the whole measured temperature range,;which implies the weak attribution of Umklapp phonon scattering. The;thermoelectric figure of merit ZT significantly increases due to the;increase of the power factor at T-CDW = 150 K. Here we argue that the;competing interaction between electron-phonon and electron-magnon;couplings exhibits the unconventional behavior of electrical and thermal;properties.;6;0;1;0;6;1098-0121;WOS:000311806300001;;;J;Osorio-Guillen, J. M.;Larrauri-Pizarro, Y. D.;Dalpian, G. M.;Pressure-induced metal-insulator transition and absence of magnetic;order in FeGa3 from a first-principles study;PHYSICAL REVIEW B;86;23;235202;10.1103/PhysRevB.86.235202;DEC 3 2012;2012;The intermetallic compound FeGa3 is a narrow-gap semiconductor with a;measured gap between 0.2 and 0.6 eV. The presence of iron d states on;the top of the valence band and on the bottom of the conduction band,;together with its moderate electronic correlation (U/W similar to 0.6),;have led to the question of whether there is magnetic order in this;compound. We have examined the possible presence of magnetism in FeGa3;as well as its electronic structure at high pressures, using the density;functional theory (DFT) + U method with the intermediated;double-counting scheme. We have found that for an optimized value of the;Yukawa screening length., there is no magnetic moment on the iron ions;(mu = 0), implying that FeGa3 is nonmagnetic. We have also found that;around a pressure of 25 GPa a metal-insulator transition takes place.;Osorio-Guillen, Jorge/B-7587-2008; Dalpian, Gustavo/B-9746-2008;Osorio-Guillen, Jorge/0000-0002-7384-8999;;3;0;0;0;3;1098-0121;WOS:000311806300005;;;J;Yuan, Xun;Zhang, Yubo;Abtew, Tesfaye A.;Zhang, Peihong;Zhang, Wenqing;VO2: Orbital competition, magnetism, and phase stability;PHYSICAL REVIEW B;86;23;235103;10.1103/PhysRevB.86.235103;DEC 3 2012;2012;The relative phase stability of VO2 is one of the most fundamental;issues concerning the metal-insulator transition in this material but;has been so far largely unexplored theoretically. We investigate the;relative stability of various phases of VO2 using different levels of;energy functionals within density functional theory (DFT). It is found;that straightforward applications of several popular energy functionals,;including the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, result in;a wrong prediction for the ground state of VO2. In particular, although;the HSE and DFT + U methods are able to produce a band gap in the M-1;phase, they strongly favor the formation of local magnetic moments, a;result that clearly disagrees with experiments. We also examine the;effect of the occupation and the redistribution of the d derived t(2g);(i.e., d(xz), d(yz), and d(x2-y2)) orbitals of V atoms on the calculated;relative phase stability of VO2. We find that a small change in d;occupation can result in a drastically different theoretical prediction.;With the introduction of an orbital-dependent potential, a complete;separation between the d(x2-y2) derived valence band and d(xz) and d(yz);derived conduction bands in the M-1 phase is achieved, resulting in a;slight redistribution of the d occupation and a more faithful account of;the polarization of the t(2g) orbitals. This slight rearrangement of the;d occupation also leads to a relative phase stability of VO2 ( including;structural and magnetic phases) that agrees well with experiment.;Zhang, Wenqing/K-1236-2012; Zhang, Peihong/D-2787-2012;4;0;0;0;4;1098-0121;WOS:000311806300003;;;J;Campi, Davide;Bernasconi, Marco;Benedek, Giorgio;Electronic properties and lattice dynamics of the As(111) surface;PHYSICAL REVIEW B;86;24;245403;10.1103/PhysRevB.86.245403;DEC 3 2012;2012;The bulk and surface electronic and structural properties of As(111);have been studied with first-principles methods. The inclusion of;spin-orbit interaction reveals that As shares the same topologically;nontrivial order of the bulk electronic bands of Sb which gives rise to;two spin-polarized surface states connecting valence-like and;conduction-like states. Bulk and surface phonons have been calculated by;means of density functional perturbation theory. The surface phonon;bands reveal features related to a remarkable stiffening of the surface;bilayer with respect to the bulk ones similarly to what is measured for;the Bi(111) and to what is expected for the Sb(111) surface.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000311806500003;;;J;Chakraborty, Akash;Wenk, Paul;Bouzerar, Richard;Bouzerar, Georges;Spontaneous magnetization in the presence of nanoscale inhomogeneities;in diluted magnetic systems;PHYSICAL REVIEW B;86;21;214402;10.1103/PhysRevB.86.214402;DEC 3 2012;2012;The presence of nanoscale inhomogeneities has been experimentally;evidenced in several diluted magnetic systems, which in turn often leads;to interesting physical phenomena. However, a proper theoretical;understanding of the underlying physics is lacking in most of the cases.;Here, we present a detailed and comprehensive theoretical study of the;effects of nanoscale inhomogeneities on the temperature-dependent;spontaneous magnetization in diluted magnetic systems, which is found to;exhibit an unusual and unconventional behavior. The effects of impurity;clustering on the magnetization response have hardly been studied until;now. We show that nanosized clusters of magnetic impurities can lead to;drastic effects on the magnetization compared to that of homogeneously;diluted compounds. The anomalous nature of the magnetization curves;strongly depends on the relative concentration of the inhomogeneities as;well as the effective range of the exchange interactions. In addition,;we also provide a systematic discussion of the nature of the;distributions of the local magnetizations.;3;0;0;0;3;1098-0121;WOS:000311805500004;;;J;Dmitriev, A. P.;Gornyi, I. V.;Polyakov, D. G.;Coulomb drag between ballistic quantum wires;PHYSICAL REVIEW B;86;24;245402;10.1103/PhysRevB.86.245402;DEC 3 2012;2012;We develop a kinetic equation description of Coulomb drag between;ballistic one-dimensional electron systems, which enables us to;demonstrate that equilibration processes between right- and left-moving;electrons are crucially important for establishing dc drag. In;one-dimensional geometry, this type of equilibration requires either;backscattering near the Fermi level or scattering with small-momentum;transfer near the bottom of the electron spectrum. Importantly, pairwise;forward scattering in the vicinity of the Fermi surface alone is not;sufficient to produce a nonzero dc drag resistivity rho(D), in contrast;to a number of works that have studied Coulomb drag due to this;mechanism of scattering before. We show that slow equilibration between;two subsystems of electrons of opposite chirality, "bottlenecked" by;inelastic collisions involving cold electrons near the bottom of the;conduction band, leads to a strong suppression of Coulomb drag, which;results in an activation dependence of rho(D) on temperature, instead of;the conventional power law. We demonstrate the emergence of a drag;regime in which rho(D) does not depend on the strength of interwire;interactions, while depending strongly on the strength of interactions;inside the wires.;4;0;0;0;4;1098-0121;WOS:000311806500002;;;J;Etz, Corina;Costa, Marcio;Eriksson, Olle;Bergman, Anders;Accelerating the switching of magnetic nanoclusters by anisotropy-driven;magnetization dynamics;PHYSICAL REVIEW B;86;22;224401;10.1103/PhysRevB.86.224401;DEC 3 2012;2012;In this work, the magnetization dynamics of clusters supported on;nonmagnetic substrates is shown to exhibit a complex response when;subjected to external magnetic fields. The field-driven magnetization;reversal of small Co clusters deposited on a Cu(111) surface has been;studied by means of first-principles calculations and atomistic spin;dynamics simulations. For applied fields ranging from 1 to 10 Tesla, we;observe a coherent magnetization reversal with switching times in the;range of several tenths of picoseconds to several nanoseconds, depending;on the field strength. We find a nonmonotonous dependence of the;switching times with respect to the strength of the applied field, which;we prove has its origin in the complex magnetic anisotropy landscape of;these low-dimensional systems. This effect is shown to be stable for;temperatures around 10 K, and is possible to realize over a range of;exchange interactions and anisotropy landscapes. Possible experimental;routes to achieve this unique switching behavior are discussed.;Bergman, Anders/H-7996-2012; Etz, Corina/E-3112-2014; Eriksson, Olle/E-3265-2014;Bergman, Anders/0000-0002-5134-1978;;3;1;0;0;3;1098-0121;WOS:000311805700003;;;J;Harada, S.;Zhou, J. J.;Yao, Y. G.;Inada, Y.;Zheng, Guo-qing;Abrupt enhancement of noncentrosymmetry and appearance of a spin-triplet;superconducting state in Li-2(Pd1-xPtx)(3)B beyond x=0.8;PHYSICAL REVIEW B;86;22;220502;10.1103/PhysRevB.86.220502;DEC 3 2012;2012;We report synthesis, Pt-195, B-11, and Li-7 NMR measurements, and;first-principles band calculations for noncentrosymmetric;superconductors Li-2(Pd1-xPtx)(3)B (x = 0, 0.2, 0.5, 0.8, 0.84, 0.9, and;1). For 0 <= x <= 0.8, the spin-lattice relaxation rate 1/T-1 shows a;clear coherence peak just below T-c, decreasing exponentially at low;temperature, and the Knight shift K-195 decreases below Tc. For x = 0.9;and 1.0, in contrast, 1/T-1 shows no coherence peak but a T-3 variation;and K-195 remains unchanged across T-c. These results indicate that the;superconducting state changes drastically from a spin-singlet dominant;to a spin-triplet dominant state at x = 0.8. We find that the distortion;of B(Pt,Pd)(6) increases abruptly above x = 0.8, which leads to an;abrupt enhancement of the asymmetric spin-orbit coupling as confirmed by;band calculation. Such structure distortion that enhances the extent of;inversion-symmetry breaking is primarily responsible for the pairing;symmetry evolution. The insight obtained here provides a guideline for;searching for noncentrosymmetric superconductors with a large;spin-triplet component.;Yao, Yugui/A-8411-2012; Zheng, Guo-qing/B-1524-2011;6;0;0;0;6;1098-0121;WOS:000311805700002;;;J;Huang, C. L.;Fritsch, V.;Kittler, W.;v. Loehneysen, H.;Low-temperature properties of CeAu2Ge2 single crystals grown from Au-Ge;and Sn flux;PHYSICAL REVIEW B;86;21;214401;10.1103/PhysRevB.86.214401;DEC 3 2012;2012;The specific heat of CeAu2Ge2 single crystals grown from Au-Ge (AGF) or;Sn flux (SF) was measured at temperatures T between 1.8 and 200 K. Two;magnetic transitions are observed in the zero-field specific heat at;12.1 and 14.5 K in the AGF sample, while only a single sharp transition;at 9.2 K is seen in the SF sample, confirming our recent susceptibility;results [Fritsch et al., Phys. Rev. B 84, 104446 (2011)]. We observe;several field-induced transitions in the magnetoresistance of the AGF;sample measured at 1.6 and 2.3 K in accordance with the B-T phase;diagram constructed from isothermal magnetization curves M(B). In;addition, we have measured M(B) under hydrostatic pressure P up to 10.5;kbar. The Neel temperature T-N increases linearly with P at a small rate;of 0.049 K/kbar, which suggests that, if T-N(P) is attributed to a pure;volume effect, this compound is close to the maximum transition;temperature of the Doniach diagram. The transition fields B-M between;the field-induced phases increase linearly with P as well. The;comparable Gruneisen parameters of T-N and B-M indicate that the energy;scale depending on the sample's volume is given by the antiferromagnetic;correlations and not by the Kondo effect. We discuss possible reasons;for the different magnetic behavior of AGF and SF samples.;Huang, Chien-Lung/O-2028-2013;2;0;0;0;2;1098-0121;WOS:000311805500003;;;J;Jadczak, J.;Kubisa, M.;Ryczko, K.;Bryja, L.;Potemski, M.;High magnetic field spin splitting of excitons in asymmetric GaAs;quantum wells;PHYSICAL REVIEW B;86;24;245401;10.1103/PhysRevB.86.245401;DEC 3 2012;2012;Low-temperature photoluminescence from high-quality GaAs quantum wells,;asymmetrically doped with carbon, are investigated under high magnetic;fields (up to 20 T) directed along the [001] growth axis. At higher;fields, in the sigma(-) polarized emission, we observe two well-resolved;lines which are attributed to the recombination of neutral (X) and;charged (X+) excitons. In contrast, only the neutral exciton line is;observed for the sigma(+) polarization. From the difference of the X;line positions for the two polarizations we determine the effective;Zeeman splitting of neutral excitons and then the g factor g(h) of;confined holes. We find that g(h) depends substantially on the well size;and changes the sign at moderate magnetic fields. To explain the;experimental results, the valence Landau levels are calculated using the;Luttinger model beyond the axial approximation. We demonstrate that;mainly the excited hole levels contribute to the excitonic state at;higher magnetic fields. Due to their light-hole character, resulting;from the valence-band mixing, the excited hole states have a sizable;overlap with the electron states confined far from the doped barrier.;The calculated values of g(h) are in an excellent quantitative agreement;with the experimental data.;2;0;0;0;2;1098-0121;WOS:000311806500001;;;J;Lane, Nina J.;Vogel, Sven C.;Hug, Gilles;Togo, Atsushi;Chaput, Laurent;Hultman, Lars;Barsoum, Michel W.;Neutron diffraction measurements and first-principles study of thermal;motion of atoms in select M(n+1)AX(n) and binary MX transition-metal;carbide phases;PHYSICAL REVIEW B;86;21;214301;10.1103/PhysRevB.86.214301;DEC 3 2012;2012;Herein, we compare the thermal vibrations of atoms in select ternary;carbides with the formula M(n+1)AX(n) ("MAX phases," M = Ti, Cr; A = Al,;Si, Ge; X = C, N) as determined from first-principles phonon;calculations to those obtained from high-temperature neutron powder;diffraction studies. The transition metal carbides TiC, TaC, and WC are;also studied to test our methodology on simpler carbides. Good;qualitative and quantitative agreement is found between predicted and;experimental values for the binary carbides. For all the MAX phases;studied-Ti3SiC2, Ti3GeC2, Ti2AlN, Cr2GeC and Ti4AlN3-density functional;theory calculations predict that the A element vibrates with the highest;amplitude and does so anisotropically with a higher amplitude within the;basal plane, which is in line with earlier results from high-temperature;neutron diffraction studies. In some cases, there are quantitative;differences in the absolute values between the theoretical and;experimental atomic displacement parameters (ADPs), such as reversal of;anisotropy or a systematic offset of temperature-dependent ADPs. The;mode-dependent Gruneisen parameters are also computed to explore the;anharmonicity in the system.;Lujan Center, LANL/G-4896-2012;4;0;0;0;4;1098-0121;WOS:000311805500002;;;J;Niemann, R.;Baro, J.;Heczko, O.;Schultz, L.;Faehler, S.;Vives, E.;Manosa, L.;Planes, A.;Tuning avalanche criticality: Acoustic emission during the martensitic;transformation of a compressed Ni-Mn-Ga single crystal;PHYSICAL REVIEW B;86;21;214101;10.1103/PhysRevB.86.214101;DEC 3 2012;2012;The propagation of a phase front during a thermally induced martensitic;transition is discontinuous due to pinning at various defects, an effect;which results in acoustic emission. Here we analyze the consequences of;an applied compressive stress exemplarily on a Ni50.4Mn27.9Ga21.7 single;crystal. Our experiments show that the distribution of the energies of;the acoustic emission events follows a power law for more than three;decades. This indicates that the transition exhibits avalanche;criticality. The exponent characterizing the distribution of energies;depends on the applied stress, and decreases from 1.9 +/- 0.1 at zero;stress to 1.5 +/- 0.2 at stress above 3 MPa. This decrease could be;attributed to the reduced multiplicity of variants possible under;uniaxial compression.;Niemann, Robert/F-3634-2012; Schultz, Ludwig/B-3383-2010; Manosa, Lluis/D-8579-2014; Heczko, Oleg/G-9355-2014; Vives, Eduard/I-4821-2014;Manosa, Lluis/0000-0002-1182-2670; Vives, Eduard/0000-0002-5916-7214;4;0;0;0;4;1098-0121;WOS:000311805500001;;;J;Usui, Hidetomo;Suzuki, Katsuhiro;Kuroki, Kazuhiko;Minimal electronic models for superconducting BiS2 layers;PHYSICAL REVIEW B;86;22;220501;10.1103/PhysRevB.86.220501;DEC 3 2012;2012;We construct minimal electronic models for a newly discovered;superconductor LaO1-xFxBiS2 (T-c = 10.6 K) possessing BiS2 layers based;on a first-principles band calculation. First, we obtain a model;consisting of two Bi 6p and two S 3p orbitals, which give nearly;electron-hole symmetric bands. Further focusing on the bands that;intersect the Fermi level, we obtain a model with two p orbitals. The;two bands (per BiS2 layer) have a quasi-one-dimensional character with a;double minimum dispersion, which gives good nesting of the Fermi;surface. At around x similar to 0.5 the topology of the Fermi surface;changes, so that the density of states at the Fermi level becomes large.;Possible pairing states are discussed.;42;0;0;0;42;1098-0121;WOS:000311805700001;;;J;Cammarata, Antonio;Rondinelli, James M.;Spin-assisted covalent bond mechanism in "charge-ordering" perovskite;oxides;PHYSICAL REVIEW B;86;19;195144;10.1103/PhysRevB.86.195144;NOV 30 2012;2012;First-principles density functional calculations on the metal-insulator;transition (MIT) in perovskite CaFeO3 point to local ferromagnetic;coupling as the microscopic origin for the electronic "charge order";transition. Our atomic, electronic, and magnetic structure analyses;reveal that the MIT results from a spin-assisted covalent bonding;mechanism between the O 2p and Fe 3d states with anisotropic Fe-O bonds;and negligible intersite Fe-Fe charge transfer. We suggest that control;of the lattice distortions, which mediate the covalent bond formation,;in oxides containing late transition-metal row cations in high valence;states provides a platform to tailor electronic transitions.;Rondinelli, James/A-2071-2009; Cammarata, Antonio/A-4883-2014;Rondinelli, James/0000-0003-0508-2175; Cammarata,;Antonio/0000-0002-5691-0682;7;0;0;0;7;1098-0121;WOS:000311715000003;;;J;Clem, John R.;Kogan, V. G.;Kinetic impedance and depairing in thin and narrow superconducting films;PHYSICAL REVIEW B;86;17;174521;10.1103/PhysRevB.86.174521;NOV 30 2012;2012;We use both Eilenberger-Usadel and Ginzburg-Landau (GL) theory to;calculate the superfluid's temperature-dependent kinetic inductance for;all currents up to the depairing current in thin and narrow;superconducting films. The calculations apply to BCS weak-coupling;superconductors with isotropic gaps and transport mean-free paths much;less than the BCS coherence length. The kinetic inductance is calculated;for the response to a small alternating current when the film is;carrying a dc bias current. In the slow-experiment/fast-relaxation;limit, in which the superconducting order parameter quasistatically;follows the time-dependent current, the kinetic inductance diverges as;the bias current approaches the depairing value. However, in the;fast-experiment/slow-relaxiation limit, in which the the superconducting;order parameter remains fixed at a value corresponding to the dc bias;current, the kinetic inductance rises to a finite value at the depairing;current. We then use time-dependent GL theory to calculate the kinetic;impedance of the superfluid, which includes not only the kinetic;reactance, but also the kinetic resistance of the superfluid arising;from dissipation due to order-parameter relaxation. The kinetic;resistance is largest for angular frequencies omega obeying omega tau(s);> 1, where tau(s) is the order-parameter relaxation time, and for bias;currents close to the depairing current. We also include the normal;fluid's contribution to dissipation in deriving an expression for the;total kinetic impedance. The Appendices contain many details about the;temperature-dependent behavior of superconductors carrying current up to;the depairing value.;3;0;0;0;3;1098-0121;WOS:000311714600005;;;J;Cohn, J. L.;Boynton, P.;Trivino, J. S.;Trastoy, J.;White, B. D.;dos Santos, C. A. M.;Neumeier, J. J.;Stoichiometry, structure, and transport in the quasi-one-dimensional;metal Li0.9Mo6O17;PHYSICAL REVIEW B;86;19;195143;10.1103/PhysRevB.86.195143;NOV 30 2012;2012;A correlation between lattice parameters, oxygen composition, and the;thermoelectric and Hall coefficients is presented for single-crystal;Li0.9Mo6O17, a quasi-one-dimensional (Q1D) metallic compound. The;possibility that this compound is a compensated metal is discussed in;light of a substantial variability observed in the literature for these;transport coefficients.;1;0;0;0;1;1098-0121;WOS:000311715000002;;;J;Crepaldi, A.;Ressel, B.;Cilento, F.;Zacchigna, M.;Grazioli, C.;Berger, H.;Bugnon, Ph.;Kern, K.;Grioni, M.;Parmigiani, F.;Ultrafast photodoping and effective Fermi-Dirac distribution of the;Dirac particles in Bi2Se3;PHYSICAL REVIEW B;86;20;205133;10.1103/PhysRevB.86.205133;NOV 30 2012;2012;We exploit time- and angle-resolved photoemission spectroscopy to;determine the evolution of the out-of-equilibrium electronic structure;of the topological insulator Bi2Se3. The response of the Fermi-Dirac;distribution to ultrashort IR laser pulses has been studied by modeling;the dynamics of hot electrons after optical excitation. We disentangle a;large increase in the effective temperature (T*) from a shift of the;chemical potential (mu*), which is consequence of the ultrafast;photodoping of the conduction band. The relaxation dynamics of T* and;mu* are k independent and these two quantities uniquely define the;evolution of the excited charge population. We observe that the energy;dependence of the nonequilibrium charge population is solely determined;by the analytical form of the effective Fermi-Dirac distribution.;14;1;0;0;14;1098-0121;WOS:000311715100007;;;J;Dumlich, Heiko;Reich, Stephanie;Nanotube bundles and tube-tube orientation: A van der Waals density;functional study (vol 84, 064121, 2011);PHYSICAL REVIEW B;86;17;179905;10.1103/PhysRevB.86.179905;NOV 30 2012;2012;0;0;0;0;0;1098-0121;WOS:000311714600007;;;J;Fukutani, Keisuke;Hayashi, Hirokazu;Yakovkin, Ivan N.;Habuchi, Takafumi;Hirayama, Daisuke;Jiang, Jian;Iwasawa, Hideaki;Shimada, Kenya;Losovyj, Ya. B.;Dowben, Peter A.;
12:449:6 Crystal field analysis of rare-earth ions energy levels in GaN
DOI:10.1016/j.optmat.2014.05.018 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Stachowicz, M.;Kozanecki, A.;Ma, C. -G.;Brik, M. G.;Lin, J. Y.;Jiang, Hx;Zavada, J. M.;
12:450:1 Carrier dynamics of Mg-doped indium nitride
DOI:10.1063/1.3479523 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Ahn, H.;Yu, K. -J.;Hong, Y. -L.;Gwo, S.;
12:450:2 Carrier recombination processes in Mg-doped N-polar InN films
DOI:10.1063/1.3586775 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Imai, Daichi;Ishitani, Yoshihiro;Fujiwara, Masayuki;Kusakabe, Kazuhide;Wang, Xinqian;Yoshikawa, Akihiko;
12:450:3 Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
DOI:10.1007/s11664-013-2550-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Imai, D.;Ishitani, Y.;Fujiwara, M.;Wang, X. Q.;Kusakabe, K.;Yoshikawa, A.;
12:450:4 Mg-induced terahertz transparency of indium nitride films
DOI:10.1063/1.3669538 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Ahn, H.;Chia, J. -W.;Lee, H. -M.;Hong, Y. -L.;Gwo, S.;
12:451:1 Identification of the parameters controlling the grain refinement of ultra-rapidly annealed low carbon Al-killed steels
DOI:10.1016/j.msea.2010.05.024 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:9 AU: Massardier, V.;Ngansopa, A.;Fabregue, D.;Merlin, J.;
12:451:2 Influence of the heating rate on the recrystallization behavior of molybdenum
DOI:10.1016/j.msea.2011.12.099 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2012
TC:3 AU: Primig, S.;Leitner, H.;Knabl, W.;Lorich, A.;Clemens, H.;Stickler, R.;
12:451:3 Grain growth and static recrystallization kinetics in Co-20Cr-15W-10Ni (L-605) cobalt-base superalloy
DOI:10.1080/14786435.2014.903342 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Favre, Julien;Fabregue, Damien;Maire, Eric;Chiba, Akihiko;
12:451:4 Which stresses affect the glide of screw dislocations in bcc metals?
DOI:10.1080/14786435.2014.904058 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:2 AU: Groeger, Roman;
12:452:1 Enhanced photorefractivity in a polymer/nanocrystal composite photorefractive device at telecommunication wavelength
DOI:10.1063/1.3531650 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Zhu, Jing;Kim, Won Jin;He, Guang S.;Seo, Jangwon;Yong, Ken-Tye;Lee, Dongho;Cartwright, Alexander N.;Cui, Yiping;Prasad, Paras N.;
12:452:2 Enhanced photorefractivity in a polymer/nanocrystal composite photorefractive device at telecommunication wavelength (vol 97, 263108, 2010)
DOI:10.1063/1.3549699 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Zhu, Jing;Kim, Won Jin;He, Guang S.;Seo, Jangwon;Yong, Ken-Tye;Lee, Dongho;Cartwright, Alexander N.;Cui, Yiping;Prasad, Paras N.;
12:452:3 Nanocomposite approaches for enhancing the DC and photoconductivity of DNA films
DOI:10.1088/0957-4484/24/33/335203 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Kim, Won Jin;Cho, Min Ju;Seo, Jangwon;Bartsch, Carrie M.;Grote, James;Prasad, Paras N.;
12:452:4 Photopatternable transparent conducting oxide nanoparticles for transparent electrodes
DOI:10.1088/0957-4484/24/6/065302 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Kim, Won Jin;Kim, Sung Jin;Cartwright, Alexander N.;Prasad, Paras N.;
12:453:1 Crystal polarity role in Mg incorporation during GaN solution growth
DOI:10.1016/j.jcrysgro.2014.06.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Freitas, Jaime A., Jr.;Feigelson, Boris N.;Anderson, Travis J.;
12:453:2 GaN single crystals of different habit grown from solution at near atmospheric pressure
DOI:10.1016/j.jcrysgro.2010.04.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Feigelson, B. N.;Hite, J. K.;Garces, N. Y.;Freitas, J. A., Jr.;Tischler, J. G.;Klein, P. B.;
12:453:3 Electrical and optical characterization of GaN micro-wires
DOI:10.1016/j.jcrysgro.2011.01.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Jung, Younghun;Ahn, Jaehui;Mastro, Michael A.;Hite, Jennifer K.;Feigelson, Boris;Eddy, Charles R., Jr.;Kim, Jihyun;
12:453:4 Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction
DOI:10.1063/1.3377005 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Ahn, Jaehui;Mastro, Michael A.;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Jihyun;
12:453:5 Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
DOI:10.1016/j.jcrysgro.2010.04.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Garces, N. Y.;Feigelson, B. N.;Freitas, J. A., Jr.;Kim, Jihyun;Myers-Ward, R.;Glaser, E. R.;
12:453:6 Optical probing of low-pressure solution grown GaN crystal properties
DOI:10.1016/j.jcrysgro.2010.04.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Freitas, J. A., Jr.;Tischler, J. G.;Garces, N. Y.;Feigelson, B. N.;
12:454:1 In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
DOI:10.1063/1.3663575 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Wunderer, Thomas;Northrup, John E.;Yang, Zhihong;Teepe, Mark;Strittmatter, Andre;Johnson, Noble M.;Rotella, Paul;Wraback, Michael;
12:454:2 Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
DOI:10.1063/1.4757758 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Zeng, X.;Boiko, D. L.;Cosendey, G.;Glauser, M.;Carlin, J. -F.;Grandjean, N.;
12:454:3 In-depth analysis of injection-seeded long external cavity InGaN/GaN surface-emitting laser
DOI:10.1063/1.4789806 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Zeng, X.;Boiko, D. L.;Cosendey, G.;Glauser, M.;Carlin, J. -F.;Grandjean, N.;
12:454:4 Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
DOI:10.1063/1.4745025 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Debusmann, R.;Brauch, U.;Hoffmann, V.;Weyers, M.;Kneissl, M.;
12:455:1 Evolution of optical properties of tin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation
DOI:10.1063/1.4869722 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, D. X.;Shen, B.;Zheng, Y. X.;Wang, S. Y.;Zhang, J. B.;Yang, S. D.;Zhang, R. J.;Chen, L. Y.;Wang, C. Z.;Ho, K. M.;
12:455:2 Approach for measuring complex refractive index of molten Sb2Te3 by spectroscopic ellipsometry
DOI:10.1063/1.3691951 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Kuwahara, M.;Endo, R.;Tsutsumi, K.;Morikasa, F.;Tsuruoka, T.;Fukaya, T.;Suzuki, M.;Susa, M.;Endo, T.;Tadokoro, T.;
12:455:3 Ellipsometry applied to phase transitions and relaxation phenomena in Ni2MnGa ferromagnetic shape memory alloy
DOI:10.1063/1.4757393 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Dejneka, A.;Zablotskii, V.;Tyunina, M.;Jastrabik, L.;Perez-Landazabal, J. I.;Recarte, V.;Sanchez-Alarcos, V.;Chernenko, V. A.;
12:455:4 Study of the shape of an optical window in a super-resolution state by electromagnetic-thermal coupled simulation: Effects of melting of an active layer in an optical disc
DOI:10.1063/1.4871858 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Sano, Haruyuki;Shima, Takayuki;Kuwahara, Masashi;Fujita, Yoshiya;Uchiyama, Munehisa;Aono, Yoshiyuki;
12:456:1 Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrate
DOI:10.1016/j.tsf.2009.10.086 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Cheng, S. L.;Chen, C. Y.;Lee, S. W.;
12:456:2 Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer
DOI:10.1016/j.apsusc.2011.05.053 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Cheng, S. L.;Zhan, C. Y.;Lee, S. W.;Chen, H.;
12:456:3 Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1-xCx layers on Si(100)
DOI:10.1016/j.apsusc.2012.05.079 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Cheng, S. L.;Tseng, Y. C.;Lee, S. W.;Chen, H.;
12:456:4 Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate
DOI:10.1016/j.matchemphys.2011.07.032 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:0 AU: Cheng, S. L.;Yang, C. Y.;Lee, S. W.;Hsu, H. F.;Chen, H.;
12:457:1 Unification of three multiphonon trap-assisted tunneling mechanisms
DOI:10.1063/1.3662195 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Zhang, Manhong;Huo, Zongliang;Yu, Zhaoan;Liu, Jing;Liu, Ming;
12:457:2 A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
DOI:10.1016/j.apsusc.2014.05.065 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Racko, Juraj;Benko, Peter;Hotovy, Ivan;Harmatha, Ladislav;Mikolasek, Miroslav;Granzner, Ralf;Kittler, Mario;Schwierz, Frank;Breza, Juraj;
12:457:3 Examination of the application of multiphonon models to the random telegraph signal noise in metal-oxide-semiconductor structures
DOI:10.1063/1.4800528 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Zhang, Manhong;Liu, Ming;
12:457:4 Comparison of tunneling current assisted by neutral and positive traps with finite ranged core-potential
DOI:10.1063/1.4759323 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Sun, Zhong;Zhang, Manhong;Huo, Zongliang;Wang, Yong;Liu, Ming;
12:457:5 Gate dielectric degradation: Pre-existing vs. generated defects
DOI:10.1063/1.4862231 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Veksler, Dmitry;Bersuker, Gennadi;
12:458:1 Determination of subband energies and 2DEG characteristics of AlxGa1-xN/GaN heterojunctions using variational method
DOI:10.1116/1.4865562 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Manouchehri, Farzin;Valizadeh, Pouya;Kabir, M. Z.;
12:458:2 Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors
DOI:10.1063/1.4764866 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Jos, Rik;
12:458:3 A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages
DOI:10.1063/1.4818832 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Jos, Rik;
12:458:4 Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric
DOI:10.1116/1.4771655 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:3 AU: Lossy, Richard;Gargouri, Hassan;Arens, Michael;Wuerfl, Joachim;
12:458:5 Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure
DOI:10.1116/1.4821195 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Chiu, Hsien-Chin;Chen, Chao-Hung;Yang, Chih-Wei;Kao, Hsuan-Ling;Huang, Fan-Hsiu;Peng, Sheng-Wen;Lin, Heng-Kuang;
12:459:1 Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures
DOI:10.1103/PhysRevB.88.045319 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Castleton, C. W. M.;Hoeglund, A.;Goethelid, M.;Qian, M. C.;Mirbt, S.;
12:459:2 Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy
DOI:10.1103/PhysRevB.84.085210 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Weidlich, P. H.;Dunin-Borkowski, R. E.;Ebert, Ph.;
12:459:3 Oxygen Vacancies versus Fluorine at CeO2(111): A Case of Mistaken Identity?
DOI:10.1103/PhysRevLett.112.156102 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:2 AU: Kullgren, J.;Wolf, M. J.;Castleton, C. W. M.;Mitev, P.;Briels, W. J.;Hermansson, K.;
12:459:4 Publisher's Note: Oxygen vacancies versus fluorine at CeO2(111): A case of mistaken Identity? (vol 112, pg 156102 2014)
DOI:10.1103/PhysRevLett.112.169903 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Kullgren, J.;Wolf, M. J.;Castleton, C. W. M.;Mitev, P.;Briels, W. J.;Hermansson, K.;
12:460:1 Multiplex electrical detection of avian influenza and human immunodeficiency virus with an underlap-embedded silicon nanowire field-effect transistor
DOI:10.1016/j.bios.2013.12.014 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:4 AU: Kim, Jee-Yeon;Ahn, Jae-Hyuk;Moon, Dong-Il;Park, Tae Jung;Lee, Sang Yup;Choi, Yang-Kyu;
12:460:2 An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance
DOI:10.1063/1.4894240 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, Da;Gao, Xindong;Chen, Si;Norstrom, Hans;Smith, Ulf;Solomon, Paul;Zhang, Shi-Li;Zhang, Zhen;
12:460:3 MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection
DOI:10.1016/j.bios.2011.07.062 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:7 AU: Yuan, Heng;Kwon, Hyurk-Choon;Yeom, Se-Hyuk;Kwon, Dae-Hyuk;Kang, Shin-Won;
12:460:4 CRP detection from serum for chip-based point-of-care testing system
DOI:10.1016/j.bios.2012.08.047 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:8 AU: Kim, Chang-Hoon;Ahn, Jae-Hyuk;Kim, Jee-Yeon;Choi, Ji-Min;Lim, Kyung-Choon;Park, Tae Jung;Heo, Nam Su;Lee, Hee Gu;Kim, Jong-Wan;Choi, Yang-Kyu;
12:460:5 Label-free DNA detection with a nanogap embedded complementary metal oxide semiconductor
DOI:10.1088/0957-4484/22/13/135502 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Kim, Chang-Hoon;Jung, Cheulhee;Lee, Kyung-Bok;Park, Hyun Gyu;Choi, Yang-Kyu;
12:461:1 One-dimensional metallic-dielectric (Ag/SiO2) photonic crystals filter for thermophotovoltaic applications
DOI:10.1016/j.renene.2012.03.001 JN:RENEWABLE ENERGY PY:2012
TC:7 AU: Mostafa, Samia I.;Rafat, Nadia H.;El-Naggar, Sahar A.;
12:461:2 Polarization Modes Control on the Transmittance Characteristics of One Dimensional Photonic Crystal
DOI:10.1166/jctn.2011.1901 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:1 AU: Aly, Arafa H.;Hanafey, Hassan S.;
12:461:3 New development of one-dimensional Si/SiO2 photonic crystals filter for thermophotovoltaic applications
DOI:10.1016/j.renene.2009.06.013 JN:RENEWABLE ENERGY PY:2010
TC:12 AU: Mao, Lei;Ye, Hong;
12:461:4 The optical transmission characteristics in metallic photonic crystals
DOI:10.1016/j.matchemphys.2010.08.006 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:1 AU: Aly, Arafa H.;Elsayed, Hussein A.;Hamdy, Hany S.;
12:461:5 Design and analysis of solar thermophotovoltaic systems
DOI:10.1016/j.renene.2010.06.050 JN:RENEWABLE ENERGY PY:2011
TC:9 AU: Xuan, Yimin;Chen, Xue;Han, Yuge;
12:462:1 Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography
DOI:10.1116/1.4898778 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Guo, Xu;Hu, Jing;Zhuang, Zhe;Deng, Mengmeng;Wu, Feixiang;Li, Xie;Liu, Bin;Yuan, Changsheng;Ge, Haixiong;Li, Feng;Chen, Yanfeng;
12:462:2 A sandwiched flexible polymer mold for control of particle-induced defects in nanoimprint lithography
DOI:10.1007/s00339-012-7334-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Li, Bin;Zhang, Jizong;Ge, Haixiong;
12:462:3 Wafer-level fabrication and optical characterization of nanoscale patterned sapphire substrates
DOI:10.1016/j.apsusc.2011.07.117 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Lin, Yu-Sheng;Hsu, Wen-Ching;Huang, Kuo-Cheng;Yeh, J. Andrew;
12:462:4 Metal contact printing photolithography for fabrication of submicrometer patterned sapphire substrates for light-emitting diodes
DOI:10.1116/1.4774061 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Hsieh, Yi-Ta;Lee, Yung-Chun;
12:463:1 AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation
DOI:10.1063/1.3690047 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Lalinsky, T.;Vanko, G.;Vallo, M.;Dobrocka, E.;Ryger, I.;Vincze, A.;
12:463:2 Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
DOI:10.1016/j.apsusc.2012.09.004 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Vallo, Martin;Lalinsky, Tibor;Dobrocka, Edmund;Vanko, Gabriel;Vincze, Andrej;Ryger, Ivan;
12:463:3 Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
DOI:10.1063/1.3458700 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Ostermaier, C.;Pozzovivo, G.;Basnar, B.;Schrenk, W.;Schmid, M.;Toth, L.;Pecz, B.;Carlin, J. -F.;Gonschorek, M.;Grandjean, N.;Strasser, G.;Pogany, D.;Kuzmik, J.;
12:463:4 Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
DOI:10.1016/j.apsusc.2013.06.069 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Lalinsky, T.;Vallo, M.;Vanko, G.;Dobrocka, E.;Vincze, A.;Osvald, J.;Ryger, I.;Dzuba, J.;
12:463:5 Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
DOI:10.1016/j.apsusc.2014.05.097 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Harmatha, Ladislav;Stuchlikova, Lubica;Racko, Juraj;Marek, Juraj;Pechacek, Juraj;Benko, Peter;Nemec, Michal;Breza, Juraj;
12:464:1 Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate
DOI:10.1016/j.tsf.2010.11.043 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Oh, Tae Su;Jeong, Hyun;Lee, Yong Seok;Seo, Tae Hoon;Park, Ah Hyun;Kim, Hun;Lee, Kang Jea;Jeong, Mun Seok;Suh, Eun-Kyung;
12:464:2 Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate
DOI:10.1016/j.tsf.2013.05.111 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Wan, Zhixin;He, Yinsheng;Choi, Cheljong;Suh, Eunkyung;Yu, Young Moon;Yi, Sam-Nyung;Ahn, Hyung-Soo;Yang, Min;Lee, Hyo-Jong;Shin, Keesam;
12:464:3 Threading-dislocation blocking by stacking faults formed in an undoped GaN layer on a patterned sapphire substrate
DOI:10.1063/1.3658451 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Lee, Sung Bo;Kwon, Tae-Wan;Lee, Sung-Hak;Park, Jungwon;Choi, Won-Jin;
12:464:4 Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate
DOI:10.1016/j.matlet.2013.12.035 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Chen, Yu-Chung;Lin, Bo-Wen;Hsu, Wen-Ching;Wu, YewChung Sermon;
12:464:5 Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures
DOI:10.1016/j.materresbull.2014.04.063 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Lee, Kwanjae;Lee, Hyunjung;Lee, Cheul-Ro;Kim, Jin Soo;Lee, Jin Hong;Ryu, Mee-Yi;Leem, Jae-Young;
12:465:1 Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD
DOI:10.1007/s13391-013-2203-6 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:4 AU: Bak, S. J.;Mun, D. -H.;Jung, K. C.;Park, J. H.;Bae, H. J.;Lee, I. W.;Ha, J. -S.;Jeong, T.;Oh, T. S.;
12:465:2 Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy
DOI:10.1007/s13391-012-1076-4 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:3 AU: Park, Jinsub;Ha, Jun-Seok;Hong, Soon-Ku;Lee, Seog Woo;Cho, Meoung Whan;Yao, Takafumi;Lee, Hae Woo;Lee, Sang Hwa;Lee, Sung-Keun;Lee, Hyo-Jong;
12:465:3 The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition
DOI:10.1007/s13391-014-3371-8 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Wang, Xun;Li, Haiqiang;Wang, Jing;Xiao, Lei;
12:465:4 The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate
DOI:10.1016/j.jcrysgro.2010.03.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Cao, Jianxing;Li, Shuti;Fan, Guanghan;Zhang, Yong;Zheng, Shuwen;Yin, Yian;Huang, Junyi;Su, Jun;
12:466:1 Analysis of critical dimensions for axial double heterostructure nanowires
DOI:10.1063/1.4767927 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Geng, Hui;Yan, Xin;Zhang, Xia;Li, Junshuai;Huang, Yongqing;Ren, Xiaomin;
12:466:2 Growth of size and density controlled GaAs/InxGa1-xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs
DOI:10.1116/1.3498753 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Gunawan, Aloysius A.;Jha, S.;Kuech, T. F.;
12:466:3 Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask
DOI:10.1016/j.mssp.2012.05.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Liu, Wen;Wang, Xiaodong;Xu, Rui;Wang, Xiaofeng;Cheng, Kaifang;Ma, Huili;Yang, Fuhua;Li, Jinmin;
12:467:1 Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method
DOI:10.1016/j.jcrysgro.2012.09.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Hermann, R.;Wendrock, H.;Rodan, S.;Roessler, U. K.;Blum, C. G. F.;Wurmehl, S.;Buechner, B.;
12:467:2 Magnetic field controlled single crystal growth and surface modification of titanium alloys exposed for biocompatibility
DOI:10.1016/j.jcrysgro.2010.10.196 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Hermann, Regina;Uhlemann, Margitta;Wendrock, Horst;Gerbeth, Gunter;Buechner, Bernd;
12:467:3 Convectional controlled crystal-melt interface using two-phase radio-frequency electromagnetic heating
DOI:10.1007/s10853-009-4117-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:3 AU: Hermann, R.;Gerbeth, G.;Priede, J.;Krauze, A.;Behr, G.;Buechner, B.;
12:468:1 Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core-Shell Structure
DOI:10.1166/jctn.2010.1389 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:5 AU: Fu, Yue;Zhang, Lining;He, Jin;Ma, Chenyue;Chen, Lin;Xu, Yiwen;
12:468:2 Quantum Transport Dynamics in Cylindrical Nanowires
DOI:10.1166/jctn.2014.3461 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:2 AU: Raffah, Bahaaudin M.;Wang, Jingbo;
12:468:3 Computation of Nanowire Transport Properties
DOI:10.1166/jctn.2014.3342 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:2 AU: Raffah, Bahaaudin M.;Abbott, Paul C.;
12:468:4 Quantum Billiards Under the Influence of External Magnetic Field
DOI:10.1166/jctn.2010.1589 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:1 AU: Rodriguez, J. P.;Wang, J. B.;
12:469:1 Three-Dimensional Study of the Vector Potential of Magnetic Structures
DOI:10.1103/PhysRevLett.104.253901 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:13 AU: Phatak, Charudatta;Petford-Long, Amanda K.;De Graef, Marc;
12:469:2 On the magnetostatics of chains of magnetic nanoparticles
DOI:10.1016/j.jmmm.2011.06.058 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:7 AU: Phatak, C.;Pokharel, R.;Beleggia, M.;De Graef, M.;
12:469:3 Three-Dimensional Observation of Magnetic Vortex Cores in Stacked Ferromagnetic Discs
DOI:10.1021/nl504473a JN:NANO LETTERS PY:2015
TC:2 AU: Tanigaki, Toshiaki;Takahashi, Yoshio;Shimakura, Tomokazu;Akashi, Tetsuya;Tsuneta, Ruriko;Sugawara, Akira;Shindo, Daisuke;
12:470:1 Control of defect binding and magnetic interaction energies in dilute magnetic semiconductors by charge state manipulation
DOI:10.1063/1.4838016 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Raebiger, Hannes;Nakayama, Hikaru;Fujita, Takeshi;
12:470:2 Multiple exchange interactions induced by Jahn-Teller distortions in dilute magnetic semiconductors
DOI:10.1103/PhysRevB.84.172406 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Raebiger, Hannes;Fujita, Takeshi;
12:470:3 Theory of defect complexes in insulators
DOI:10.1103/PhysRevB.82.073104 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Raebiger, Hannes;
12:471:1 Tip-based nanoscale selective growth of discrete silicon nanowires by near-field laser illumination
DOI:10.1007/s00339-014-8480-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Ryu, Sang-gil;Hwang, David J.;Kim, Eunpa;Grigoropoulos, Costas P.;
12:471:2 On demand-direct synthesis of Si and Ge nanowires on a single platform by focused laser illumination
DOI:10.1063/1.3643042 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Hwang, David J.;Ryu, Sang-gil;Kim, Eunpa;Grigoropoulos, Costas P.;Carraro, Carlo;
12:471:3 Multi-parametric growth of silicon nanowires in a single platform by laser-induced localized heat sources
DOI:10.1088/0957-4484/22/38/385303 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Hwang, David J.;Ryu, Sang-Gil;Grigoropoulos, Costas P.;
12:472:1 Gradient etching of silicon-based thin films for depth-resolved measurements: The example of Raman crystallinity
DOI:10.1016/j.tsf.2011.11.029 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Koehler, F.;Schicho, S.;Wolfrum, B.;Gordijn, A.;Pust, S. E.;Carius, R.;
12:472:2 High deposition rate processes for the fabrication of microcrystalline silicon thin films
DOI:10.1016/j.mseb.2012.11.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: Michard, S.;Meier, M.;Grootoonk, B.;Astakhov, O.;Gordijn, A.;Finger, F.;
12:472:3 At the limit of total silane gas utilization for preparation of high-quality microcrystalline silicon solar cells at high-rate plasma deposition
DOI:10.1063/1.3593377 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Gordijn, A.;Pollet-Villard, A.;Finger, F.;
12:472:4 Input silane concentration effect on the a-Si:H to mu c-Si:H transition width
DOI:10.1016/j.solmat.2009.10.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:2 AU: Feltrin, A.;Strahm, B.;Bugnon, G.;Sculati-Meillaud, F.;Ballif, C.;Howling, A. A.;Hollenstein, Ch.;
12:473:1 Terahertz emission from cubic semiconductor induced by a transient anisotropic photocurrent
DOI:10.1063/1.4758181 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Malevich, V. L.;Ziaziulia, P. A.;Adomavicius, R.;Krotkus, A.;Malevich, Y. V.;
12:473:2 Terahertz beam steering by optical coherent control
DOI:10.1063/1.4812364 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Fueser, Heiko;Bieler, Mark;
12:473:3 Physical mechanisms of terahertz pulse emission from photoexcited surfaces of tellurium crystals
DOI:10.1063/1.4894514 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Biciunas, A.;Arlauskas, A.;Adamonis, J.;Cicenas, P.;Krotkus, A.;
12:473:4 Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors
DOI:10.1063/1.4865961 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Malevich, Y. V.;Adomavicius, R.;Krotkus, A.;Malevich, V. L.;
12:474:1 Efficiency enhancement of silicon solar cells with silicon nanocrystals embedded in PECVD silicon nitride matrix
DOI:10.1016/j.solmat.2012.02.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:12 AU: Taube, William R.;Kumar, A.;Saravanan, R.;Agarvval, P. B.;Kothari, P.;Joshi, B. C.;Kumar, D.;
12:474:2 Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells
DOI:10.1016/j.tsf.2011.04.078 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Ko, Jisoo;Gong, Daeyeong;Pillai, Krishnakumar;Lee, Kong-Soo;Ju, Minkyu;Choi, Pyungho;Kim, Kwang-Ryul;Yi, Junsin;Choi, Byoungdeog;
12:474:3 Si nanocrystal-based triple-layer anti-reflection coating for Si solar cells
DOI:10.1063/1.4817821 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Zhang, Jun;Chen, T. P.;Liu, Yang;Wong, Jen It;
12:475:1 Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells
DOI:10.1016/j.solmat.2012.06.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:10 AU: Kim, Ka-Hyun;Johnson, Erik V.;Cabarrocas, Pere Roca I.;
12:475:2 Substrate versus superstrate configuration for stable thin film silicon solar cells
DOI:10.1016/j.solmat.2013.05.045 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:2 AU: Kim, Ka-Hyun;Kasouit, Samir;Johnson, Erik V.;Roca i Cabarrocas, Pere;
12:475:3 Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon
DOI:10.1063/1.3592264 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Bobela, David C.;Branz, Howard M.;Stradins, Paul;
12:476:1 Optical scattering of nanoccystalline Pb(ZrxTi1-x)O-3 films
DOI:10.1016/j.jeurceramsoc.2009.05.047 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:3 AU: Puustinen, Jarkko;Lappalainen, Jyrki;Hiltunen, Jussi;Lantto, Vilho;
12:476:2 Orientation Dependent Dielectric Characteristics of Nanocrystalline Pb(ZrxTi1-x)O3 Films with Inter Digital Electrodes
DOI:10.1080/00150193.2010.483377 JN:FERROELECTRICS PY:2010
TC:1 AU: Puustinen, J.;Lappalainen, J.;Hiltunen, J.;Lantto, V.;Jantunen, H.;
12:476:3 Dielectric and Tunability Properties of Nanostructured Nd-modified Pb(ZrxTi1-x) O-3 Thin Films up to Microwave Frequencies
DOI:10.1080/00150193.2014.893735 JN:FERROELECTRICS PY:2014
TC:0 AU: Palukuru, V. K.;Lappalainen, J.;Puustinen, J.;Kangaspuoskari, M.;Huotari, J.;
12:477:1 Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor
DOI:10.1016/j.tsf.2012.06.040 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Hao, L. Z.;Zhu, J.;Liu, Y. J.;Liao, X. W.;Wang, S. L.;Zhou, J. J.;Kong, C.;Zeng, H. Z.;Zhang, Y.;Zhang, W. L.;Li, Y. R.;
12:477:2 Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures?
DOI:10.1063/1.3494040 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Zhang, Jihua;Yang, Chuanren;Liu, Ying;Zhang, Min;Chen, Hongwei;Zhang, Wanli;Li, Yanrong;
12:477:3 Enhancing electrical properties of LiNbO3/AlGaN/GaN transistors by using ZnO buffers
DOI:10.1063/1.4811820 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Hao, Lanzhong;Li, Yanrong;Zhu, Jun;Wu, Zhipeng;Deng, Jie;Zeng, Huizhong;Zhang, Jihua;Liu, Xingzhao;Zhang, Wanli;
12:478:1 Low pressure-temperature-gas flow HVPE growth of GaP for nonlinear optical frequency conversion devices
DOI:10.1016/j.jcrysgro.2009.12.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Tassev, Vladimir;Bliss, David;Lynch, Candace;Yapp, Calvin;Goodhue, William;Termkoa, Krongtip;
12:478:2 Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements
DOI:10.1016/j.jcrysgro.2011.12.077 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Tassev, V.;Snure, M.;Peterson, R.;Bedford, R.;Bliss, D.;Bryant, G.;Mann, M.;Goodhue, W.;Vangala, S.;Termkoa, K.;Lin, A.;Harris, J. S.;Fejer, M. M.;Yapp, C.;Tetlak, S.;
12:478:3 Production of orientation-patterned GaP templates using wafer fusion techniques
DOI:10.1016/j.optmat.2011.07.021 JN:OPTICAL MATERIALS PY:2011
TC:3 AU: Termkoa, Krongtip;Vangala, Shivashankar;Goodhue, William;Peterson, Rita;Bedford, Robert;Tassev, Vladimir;Lynch, Candace;Bliss, David;
12:479:1 Simulation of nanorod structures for an amorphous silicon-based solar cell
DOI:10.1016/j.tsf.2009.10.102 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Tang, Ming;Chang, Shu-Tong;Chen, Tzu-Chun;Pei, Zingway;Wang, Wei-Ching;Huang, Jacky;
12:479:2 TCAD studies of novel nanoplate amorphous silicon alloy thin-film solar cells
DOI:10.1016/j.tsf.2011.09.009 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Chang, S. T.;Hsieh, B. -F.;
12:479:3 TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells
DOI:10.1016/j.tsf.2009.10.100 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Chang, S. T.;Tang, M.;He, R. Y.;Wang, W. -C.;Pei, Z.;Kung, C. -Y.;
12:480:1 Graphene nanoribbon molecular sensor based on inelastic transport
DOI:10.1063/1.4870971 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Ritter, C.;Muniz, R. B.;Latge, A.;
12:480:2 Molecular vibration sensor via transport measurements in carbon nanotubes
DOI:10.1103/PhysRevB.82.113407 JN:PHYSICAL REVIEW B PY:2010
TC:1 AU: Ritter, C.;Muniz, R. B.;Makler, S. S.;Latge, A.;
12:481:1 Imaging surface charge distribution near carbon nanotube device in aqueous environments
DOI:10.1063/1.4902401 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Park, J. K.;Son, B. H.;Park, Ji-Yong;Lee, Soonil;Ahn, Y. H.;
12:481:2 Water assisted gate induced temporal surface charge distribution probed by electrostatic force microscopy
DOI:10.1063/1.4761981 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Pascal-Levy, Y.;Shifman, E.;Sivan, I.;Kalifa, I.;Pal-Chowdhury, M.;Shtempluck, O.;Razin, A.;Kochetkov, V.;Yaish, Y. E.;
12:481:3 Electron beam induced current measurements on single-walled carbon nanotube devices
DOI:10.1088/0957-4484/21/11/115706 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Park, J. K.;Ahn, Y. H.;Park, Ji-Yong;Lee, Soonil;Park, K. H.;
12:482:1 Fast growth of branched nickel monosilicide nanowires by laser-assisted chemical vapor deposition
DOI:10.1088/0957-4484/22/23/235602 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Gao, Y.;Zhou, Y. S.;Qian, M.;Xie, Z. Q.;Xiong, W.;Luo, H. F.;Jiang, L.;Lu, Y. F.;
12:482:2 Growth of nickel disilicide nanowires by CVD
DOI:10.1016/j.jnoncrysol.2010.04.010 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:4 AU: Iriarte, G. F.;
12:482:3 Effects of Laser in situ annealing on crystal quality of NiSi film grown on Si(001) substrate
DOI:10.1016/j.tsf.2009.09.084 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Wan, Li;Zhang, Xuefei;Tang, Bo;Ren, Yiming;Cheng, Xinhong;Xu, Dapeng;Luo, Hijun;Huang, Yunmi;
12:483:1 Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers
DOI:10.1063/1.4744422 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ma, Ming;Meyaard, David S.;Shan, Qifeng;Cho, Jaehee;Schubert, E. Fred;Kim, Gi Bum;Kim, Min-Ho;Sone, Cheolsoo;
12:483:2 High linearly polarized light emission from InGaN light-emitting diode with multilayer dielectric/metal wire-grid structure
DOI:10.1063/1.4898775 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Miao;Cao, Bing;Wang, Chinhua;Xu, Fuyang;Lou, Yimin;Wang, Jianfeng;Xu, Ke;
12:483:3 Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires
DOI:10.1063/1.4897971 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Uran, Can;Erdem, Talha;Guzelturk, Burak;Perkgoz, Nihan Kosku;Jun, Shinae;Jang, Eunjoo;Demir, Hilmi Volkan;
12:484:1 Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition
DOI:10.1116/1.4705727 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:1 AU: Senevirathna, M. K. Indika;Gamage, Sampath;Atalay, Ramazan;Acharya, Ananta R.;Perera, A. G. Unil;Dietz, Nikolaus;Buegler, Max;Hoffmann, Axel;Su, Liqin;Melton, Andrew;Ferguson, Ian;
12:484:2 Observation of NH2 species on tilted InN (01(1)over-bar1) facets
DOI:10.1116/1.3596619 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:3 AU: Acharya, A. R.;Buegler, M.;Atalay, R.;Dietz, N.;Thoms, B. D.;Tweedie, J. S.;Collazo, R.;
12:484:3 Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
DOI:10.1016/j.apsusc.2012.10.184 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Acharya, Ananta R.;Gamage, Sampath;Senevirathna, M. K. Indika;Alevli, Mustafa;Bahadir, Kucukgok;Melton, Andrew G.;Ferguson, Ian;Dietz, Nikolaus;Thoms, Brian D.;
12:485:1 Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height
DOI:10.1063/1.3691959 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Bozhkov, V. G.;Shmargunov, A. V.;
12:485:2 Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters
DOI:10.1063/1.3587233 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Bozhkov, V. G.;Shmargunov, A. V.;
12:485:3 The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition
DOI:10.1063/1.4867778 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Bozhkov, V. G.;Shmargunov, A. V.;Bekezina, T. P.;Torkhov, N. A.;Novikov, V. A.;
12:486:1 Reduction of the phosphorous cross-contamination in n-i-p solar cells prepared in a single-chamber PECVD reactor
DOI:10.1016/j.solmat.2010.09.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Cubero, O.;Haug, F. -J.;Ziegler, Y.;Sansonnens, L.;Couty, P.;Fischer, D.;Ballif, C.;
12:486:2 Improved light trapping in thin-film silicon solar cells via alternated n-type silicon oxide reflectors
DOI:10.1016/j.solmat.2013.05.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:16 AU: Myong, Seung Yeop;Jeon, La Sun;
12:486:3 Enhancement of microcrystalline n-i-p solar cell performance via use of pre-covering layers and H-2 treatment
DOI:10.1016/j.tsf.2011.03.011 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Sweetnam, Sean;Soederstroem, Thomas;Haug, Franz-Josef;Cubero, Oscar;Niquille, Xavier;Terrazzoni-Daudrix, Vanessa;Ballif, Christophe;
12:487:1 Time-dependent boundary conditions with lead-sample Coulomb correlations: Application to classical and quantum nanoscale electron device simulators
DOI:10.1103/PhysRevB.82.085301 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Albareda, G.;Lopez, H.;Cartoixa, X.;Sune, J.;Oriols, X.;
12:487:2 Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
DOI:10.1063/1.4803164 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Benali, A.;Traversa, F. L.;Albareda, G.;Aghoutane, M.;Oriols, X.;
12:487:3 Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities
DOI:10.1063/1.3455878 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Albareda, G.;Saura, X.;Oriols, X.;Sune, J.;
12:488:1 Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer
DOI:10.1063/1.3456534 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Dadoenkova, Yu S.;Lyubchanskii, I. L.;Lee, Y. P.;Rasing, Th;
12:488:2 Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer (vol 97, 011901, 2010)
DOI:10.1063/1.3488679 JN:APPLIED PHYSICS LETTERS PY:2010
TC:0 AU: Dadoenkova, Yu. S.;Lyubchanskii, I. L.;Lee, Y. P.;Rasing, Th.;
12:488:3 Improved formulation for Faraday rotation characterization
DOI:10.1063/1.3554259 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Tioh, Jin-Wei;Weber, Robert J.;Mina, Mani;
12:489:1 Spontaneous symmetry breaking discovers the formation of aeroplane-like ZnO nanocrystals
DOI:10.1063/1.4869022 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhou, Yan;Zhang, Junyan;Zhang, Bin;Qiang, Li;Da, Yuqing;Su, Gang;Li, Jiangong;
12:489:2 Investigating the Growth Mechanism of CdSe Nano-Tetrapods
DOI:10.1080/10584587.2012.687283 JN:INTEGRATED FERROELECTRICS PY:2012
TC:3 AU: Zhao, Lijuan;Pang, Qi;Ge, Weikun;Wang, Jiannong;
12:489:3 Spontaneous symmetry breaking during formation of ZnO nanocrystals
DOI:10.1016/j.jcrysgro.2011.03.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Zhou, Yan;Zhang, Junyan;Li, Jiangong;Zhang, Bin;
12:490:1 Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems
DOI:10.1016/j.apsusc.2011.02.108 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Hsu, H. F.;Chan, H. Y.;Chen, T. H.;Wu, H. Y.;Cheng, S. L.;Wu, F. B.;
12:490:2 Comparative investigation of the c(2 x 2)-Si/Cu(0 1 1) and (root 3 x root 3)R30 degrees-Cu2Si/Cu(1 1 1) surface alloys using DFT
DOI:10.1016/j.apsusc.2011.11.100 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Shuttleworth, I. G.;
12:490:3 Investigation of the (root 3 x root 3)R30 degrees-Cu2Si/Cu(111) surface alloy using DFT
DOI:10.1016/j.apsusc.2011.02.128 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Shuttleworth, I. G.;
12:491:1 Fabrication of luminescent a-Si:SiO2 structures by direct irradiation of high power laser on silicon surface
DOI:10.1016/j.apsusc.2014.03.168 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Dey, Partha P.;Khare, Alika;
12:491:2 Self-organized nanostructures in silicon and glass for MEMS, MOEMS and BioMEMS
DOI:10.1016/j.mseb.2009.11.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Lilienthal, K.;Fischer, M.;Stubenrauch, M.;Schober, A.;
12:491:3 FTIR, AFM and PL properties of thin SiOx films deposited by HFCVD
DOI:10.1016/j.mseb.2010.05.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:10 AU: Luna-Lopez, J. A.;Garcia-Salgado, G.;Diaz-Becerril, T.;Carrillo Lopez, J.;Vazquez-Valerdi, D. E.;Juarez-Santiesteban, H.;Rosendo-Andres, E.;Coyopol, A.;
12:492:1 Biological synthesis of free-standing uniformed goethite nanowires by Shewanella sp HN-41
DOI:10.1039/c2ta00466f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:6 AU: Jiang, Shenghua;Kim, Min-Gyu;Kim, In Young;Hwang, Seong-Ju;Hur, Hor-Gil;
12:492:2 Shewanella-mediated synthesis of selenium nanowires and nanoribbons
DOI:10.1039/b923252d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:10 AU: Ho, Cuong Tu;Kim, Jeong Won;Kim, Won Bae;Song, Kyung;Kanaly, Robert A.;Sadowsky, Michael J.;Hur, Hor-Gil;
12:492:3 Synthesis of chalcogenide ternary and quaternary nanotubes through directed compositional alterations of bacterial As-S nanotubes
DOI:10.1039/c1jm10601e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:3 AU: Jiang, Shenghua;Liu, Fang;Kim, Min-Gyu;Lim, Jae-Hong;Lee, Kun-Jae;Choa, Yong-Ho;Song, Kyung;Sadowsky, Michael J.;Chen, Wilfred;Myung, Nosang V.;Hur, Hor-Gil;
12:493:1 Large-area micro/nanostructures fabrication in quartz by laser interference lithography and dry etching
DOI:10.1007/s00339-010-5807-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:5 AU: Liu, C. H.;Hong, M. H.;Lum, M. C.;Flotow, H.;Ghadessy, F.;Zhang, J. B.;
12:493:2 Silica Lambda-shape wedge arrays fabrication and interspace tuning via hot embossing and sol-gel replication
DOI:10.1016/j.jnoncrysol.2012.03.005 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Zhai, Chen-Wei;Xu, Jiao;Zheng, Bing-Wei;Wang, Chao;Zhu, Ming-Wei;Chen, Yan-Feng;
12:494:1 Fishnet metastructure for efficiency enhancement of a thin film solar cell
DOI:10.1063/1.3626827 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Ji, Liming;Varadan, Vasundara V.;
12:494:2 Fishnet metastructure for efficiency enhancement of a thin film solar cell (vol 110, 043114, 2011)
DOI:10.1063/1.3662184 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Ji, Liming;Varadan, Vasundara V.;
12:495:1 An ultra-efficient energy transfer beyond plasmonic light scattering
DOI:10.1063/1.4901325 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Fu, Sze-Ming;Zhong, Yan-Kai;Lin, Albert;
12:495:2 Interplay of structural and temperature effects on plasmonic excitations at noble-metal interfaces
DOI:10.1080/14786435.2011.634846 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:7 AU: Politano, A.;
12:496:1 Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices
DOI:10.1016/j.jnoncrysol.2011.11.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:1 AU: Stuckelberger, Michael;Riesen, Yannick;Perruche, Brice;Despeisse, Matthieu;Wyrsch, Nicolas;Ballif, Christophe;
12:496:2 Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM)
DOI:10.1016/j.solmat.2010.04.070 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:11 AU: Shah, A. V.;Sculati-Meillaud, F.;Berenyi, Z. J.;Ghahfarokhi, O. M.;Kumar, R.;
12:497:1 A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors
DOI:10.1088/0957-4484/21/43/435201 JN:NANOTECHNOLOGY PY:2010
TC:1 AU: Chen, Wei-Chen;Lin, Horng-Chih;Lin, Zer-Ming;Hsu, Chin-Tsai;Huang, Tiao-Yuan;
12:497:2 Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
DOI:10.1063/1.3327336 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Lin, Zer-Ming;Lin, Horng-Chih;Chen, Wei-Chen;Huang, Tiao-Yuan;
12:498:1 Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release
DOI:10.1116/1.4771971 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Ansbaek, Thor;Semenova, Elizaveta S.;Yvind, Kresten;Hansen, Ole;
12:498:2 Lambda shifted photonic crystal cavity laser
DOI:10.1063/1.3501968 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Schubert, Martin;Suhr, Troels;Ek, Sara;Semenova, Elizaveta S.;Hvam, Jorn M.;Yvind, Kresten;
12:499:1 All-optical fabrication of three-dimensional photonic crystals in photopolymers by multiplex-exposure holographic recording
DOI:10.1063/1.3644395 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Orlic, Susanna;Mueller, Christian;Schloesser, Alexander;
12:499:2 Optical transfer function of three-dimensional photonic crystals by volume holographic recording
DOI:10.1063/1.4816473 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Orlic, Susanna;Bernstein, Fabian;Kratz, Christoph;Schloesser, Alexander;
12:500:1 High performance tunnel field-effect transistor by gate and source engineering
DOI:10.1088/0957-4484/25/50/505201 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Huang, Ru;Huang, Qianqian;Chen, Shaowen;Wu, Chunlei;Wang, Jiaxin;An, Xia;Wang, Yangyuan;
12:500:2 Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage
DOI:10.1063/1.3624707 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Huang, Qianqian;Huang, Ru;Wang, Zhenhua;Zhan, Zhan;Wang, Yangyuan;
12:501:1 Nanomechanical and optical properties of highly a-axis oriented AlN films
DOI:10.1063/1.4772204 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Jose, Feby;Ramaseshan, R.;Sundari, S. Tripura;Dash, S.;Tyagi, A. K.;Kiran, M. S. R. N.;Ramamurty, U.;
12:501:2 Nanomechanical and optical properties of highly a-axis oriented AlN films (vol 101, 254102, 2012)
DOI:10.1063/1.4893592 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jose, Feby;Ramaseshan, R.;Sundari, S. Tripura;Dash, S.;Tyagi, A. K.;Kiran, M. S. R. N.;Ramamurty, U.;
12:502:1 Multiphonon resonant Raman scattering in non-polar GaN epilayers
DOI:10.1063/1.4897643 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kumar, Mukesh;Becker, M.;Wernicke, T.;Singh, R.;
12:502:2 Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires
DOI:10.1016/j.matchar.2012.08.013 JN:MATERIALS CHARACTERIZATION PY:2012
TC:2 AU: Ning, J. Q.;Xu, S. J.;Wang, P. W.;Song, Y. P.;Yu, D. P.;Shan, Y. Y.;Lee, S. T.;Yang, H.;
12:503:1 Three-dimensional structure of (110) porous silicon with in-plane optical birefringence
DOI:10.1063/1.3703522 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Shichi, Shinsuke;Fujii, Minoru;Nishida, Tomoki;Yasuda, Hidehiro;Imakita, Kenji;Hayashi, Shinji;
12:503:2 Observation of a large optical birefringence effect in a (110) oriented porous silicon layer
DOI:10.1063/1.4863746 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hakshur, K.;Ruschin, S.;
12:504:1 Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements
DOI:10.1016/j.apsusc.2010.06.012 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Rudenja, S.;Minko, A.;Buchanan, D. A.;
12:504:2 Novel metal gates for high kappa applications
DOI:10.1063/1.4780447 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Chang, Mei;Chen, Michael S.;David, Anais;Gandikota, Srinivas;Ganguli, Seshadri;Hayden, Brian E.;Hung, Steven;Lu, Xinliang;Mormiche, Claire;Noori, Atif;Smith, Duncan C. A.;Vian, Chris J. B.;
12:505:1 CVD synthesis of Al2O3 nanotubular structures using a powder source
DOI:10.1016/j.ceramint.2013.12.140 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Park, Si Jung;Choi, Doo Jin;
12:505:2 Growth and mechanism of one-dimensional Al2O3 nanostructures grown by chemical vapor deposition from an Al powder source
DOI:10.1016/j.jcrysgro.2012.09.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Park, Si Jung;Choi, YooYoul;Kim, Jun Gyu;Choi, Doo Jin;
12:506:1 Direct Observation of Transient Ostwald Crystallization Ordering from Racemic Serine Solutions
DOI:10.1021/ja106728c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:13 AU: Hall, Victoria J.;Simpson, Garth J.;
12:506:2 Kinetic Trapping of Metastable Amino Acid Polymorphs
DOI:10.1021/ja410293p JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:4 AU: Chowdhury, Azhad U.;Dettmar, Christopher M.;Sullivan, Shane Z.;Zhang, Shijie;Jacobs, Kevin T.;Kissick, David J.;Maltais, Thora;Hedderich, Hartmut G.;Bishop, Patricia A.;Simpson, Garth J.;
12:507:1 Plasmon-induced local photocurrent changes in GaAs photovoltaic cells modified with gold nanospheres: A near-field imaging study
DOI:10.1063/1.3662114 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Harada, Yosuke;Imura, Kohei;Okamoto, Hiromi;Nishijima, Yoshiaki;Ueno, Kosei;Misawa, Hiroaki;
12:507:2 Anomalous Light Transmission from Plasmonic-Capped Nanoapertures
DOI:10.1021/nl103408h JN:NANO LETTERS PY:2011
TC:12 AU: Imura, Kohei;Ueno, Kosei;Misawa, Hiroaki;Okamoto, Hiromi;
12:508:1 Unravelling concurring degradation mechanisms in InGaAlP light-emitting diode structures by optical overstress experiments under reverse bias
DOI:10.1063/1.4848035 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Karl, C.;Ebbecke, J.;Zeisel, R.;Wixforth, A.;
12:508:2 Interplay of different photoluminescence degradation mechanisms in InGaAlP light emitting diode structures investigated by intense laser excitation
DOI:10.1063/1.4815875 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Karl, C.;Ebbecke, J.;Lutz, T.;Kauss, C.;Zeisel, R.;
12:509:1 Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing
DOI:10.1088/0957-4484/22/30/305709 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Chang, Chia-Chi;Chen, Haitian;Chen, Chun-Chung;Hung, Wei-Hsuan;Hsu, I-Kai;Theiss, Jesse;Zhou, Chongwu;Cronin, Stephen B.;
12:509:2 Silicon-oxide-assisted wear of a diamond-containing composite
DOI:10.1063/1.4845795 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Xiao, Huaping;Sinyukov, Alexander M.;He, Xingliang;Lin, Chih;Liang, Hong;
12:510:1 Low temperature growth of single crystalline germanium nanowires
DOI:10.1016/j.materresbull.2009.09.027 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:5 AU: Pei, L. Z.;Zhao, H. S.;Tan, W.;Yu, H. Y.;Chen, Y. W.;Wang, J. F.;Fan, C. G.;Chen, J.;Zhang, Qian-Feng;
12:510:2 The temperature dependence of 1D germanium nanostructures grown in a small-diameter quartz tube cavity by vapor deposition
DOI:10.1016/j.jcrysgro.2010.05.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:0 AU: Wei, Dapeng;Chen, Qing;
12:511:1 Yb3+:YAG growth with controlled doping distribution using modified horizontal direct crystallization
DOI:10.1016/j.jcrysgro.2011.03.060 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Azrakantsyan, M.;Albach, D.;Ananyan, N.;Gevorgyan, V.;Chanteloup, J-C.;
12:511:2 Revisiting the Hydrothermal growth of YAG
DOI:10.1016/j.jcrysgro.2012.07.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: McMillen, Colin D.;Mann, Matthew;Fan, Jiahua;Zhu, Lin;Kolis, Joseph W.;
12:512:1 Chalcogenide glass hollow core photonic crystal fibers
DOI:10.1016/j.optmat.2010.06.016 JN:OPTICAL MATERIALS PY:2010
TC:27 AU: Desevedavy, Frederic;Renversez, Gilles;Troles, Johann;Houizot, Patrick;Brilland, Laurent;Vasilief, Ion;Coulombier, Quentin;Traynor, Nicholas;Smektala, Frederic;Adam, Jean-Luc;
12:512:2 Study of thermo-mechanical properties in glassy Se and Se98M2 (M=In, Sb and Sn) alloys
DOI:10.1016/j.matlet.2014.01.146 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Kumar, H.;Sharma, A.;Mehta, N.;
12:513:1 Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence
DOI:10.1016/j.tsf.2013.05.137 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Sriprapha, Kobsak;Hongsingthong, Aswin;Krajangsang, Taweewat;Inthisang, Sorapong;Jaroensathainchok, Suttinan;Limmanee, Amornrat;Titiroongruang, Wisut;Sritharathikhun, Jaran;
12:513:2 Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence
DOI:10.1016/j.solmat.2010.05.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:10 AU: Sriprapha, K.;Piromjit, C.;Limmanee, A.;Sritharathikhun, J.;